From bfc7200fa443df3685a5b1c2a79b47144f26c2d6 Mon Sep 17 00:00:00 2001 From: Guilherme Brondani Torri Date: Thu, 28 Jan 2016 00:04:16 +0100 Subject: [PATCH 1/4] license: remove non-GPL verilog-a models. * delete non-GPL verilog-a models * remove models from the build * remove references to .h and .cpp files * remove from qucs * remove images * remove references in qucsconv * remove references in qucs-lib There are still references to some model names on the admsXml scripts. This has to be checked later to figure out if there are special transformation going on depending on the particular model name. --- qucs-core/src/components/component_id.h | 9 - qucs-core/src/components/components.h | 22 +- .../src/components/verilog/CMakeLists.txt | 14 - qucs-core/src/components/verilog/Makefile.am | 22 +- .../src/components/verilog/bsim3v34nMOS.va | 3266 ------------ .../src/components/verilog/bsim3v34pMOS.va | 3266 ------------ .../src/components/verilog/bsim4v30nMOS.va | 4496 ---------------- .../src/components/verilog/bsim4v30pMOS.va | 4498 ----------------- .../src/components/verilog/fbh_hbt-2_2a.va | 699 --- .../src/components/verilog/hicumL0V1p12.va | 851 ---- .../src/components/verilog/hicumL0V1p2.va | 1016 ---- .../src/components/verilog/hicumL0V1p2g.va | 962 ---- .../src/components/verilog/hicumL0V1p3.va | 1059 ---- .../src/components/verilog/hicumL2V2p11.va | 1198 ----- .../src/components/verilog/hicumL2V2p22.va | 1532 ------ .../src/components/verilog/hicumL2V2p23.va | 1662 ------ .../src/components/verilog/hicumL2V2p24.va | 1642 ------ .../src/components/verilog/hicumL2V2p31n.va | 1858 ------- qucs-core/src/converter/check_spice.cpp | 71 - qucs-core/src/converter/qucs_producer.cpp | 169 - qucs-core/src/module.cpp | 24 +- qucs/qucs-lib/symbolwidget.cpp | 67 - qucs/qucs/bitmaps/bsim3v34nMOS.png | Bin 1021 -> 0 bytes qucs/qucs/bitmaps/bsim3v34pMOS.png | Bin 1008 -> 0 bytes qucs/qucs/bitmaps/bsim4v30nMOS.png | Bin 1021 -> 0 bytes qucs/qucs/bitmaps/bsim4v30pMOS.png | Bin 1008 -> 0 bytes qucs/qucs/bitmaps/hicumL2V2p31n.png | Bin 295 -> 0 bytes qucs/qucs/components/CMakeLists.txt | 36 +- qucs/qucs/components/HBT_X.cpp | 238 - qucs/qucs/components/HBT_X.h | 25 - qucs/qucs/components/Makefile.am | 28 +- qucs/qucs/components/bsim3v34nMOS.cpp | 889 ---- qucs/qucs/components/bsim3v34nMOS.h | 27 - qucs/qucs/components/bsim3v34pMOS.cpp | 887 ---- qucs/qucs/components/bsim3v34pMOS.h | 27 - qucs/qucs/components/bsim4v30nMOS.cpp | 629 --- qucs/qucs/components/bsim4v30nMOS.h | 27 - qucs/qucs/components/bsim4v30pMOS.cpp | 626 --- qucs/qucs/components/bsim4v30pMOS.h | 27 - qucs/qucs/components/components.h | 15 +- qucs/qucs/components/hic0_full.cpp | 364 -- qucs/qucs/components/hic0_full.h | 29 - qucs/qucs/components/hic2_full.cpp | 383 -- qucs/qucs/components/hic2_full.h | 27 - qucs/qucs/components/hicumL0V1p2.cpp | 382 -- qucs/qucs/components/hicumL0V1p2.h | 29 - qucs/qucs/components/hicumL0V1p2g.cpp | 393 -- qucs/qucs/components/hicumL0V1p2g.h | 29 - qucs/qucs/components/hicumL0V1p3.cpp | 400 -- qucs/qucs/components/hicumL0V1p3.h | 29 - qucs/qucs/components/hicumL2V2p1.cpp | 294 -- qucs/qucs/components/hicumL2V2p1.h | 27 - qucs/qucs/components/hicumL2V2p23.cpp | 383 -- qucs/qucs/components/hicumL2V2p23.h | 27 - qucs/qucs/components/hicumL2V2p24.cpp | 383 -- qucs/qucs/components/hicumL2V2p24.h | 27 - qucs/qucs/components/hicumL2V2p31n.cpp | 417 -- qucs/qucs/components/hicumL2V2p31n.h | 27 - qucs/qucs/module.cpp | 14 - qucs/qucs/qucs.qrc | 5 - 60 files changed, 38 insertions(+), 35515 deletions(-) delete mode 100644 qucs-core/src/components/verilog/bsim3v34nMOS.va delete mode 100644 qucs-core/src/components/verilog/bsim3v34pMOS.va delete mode 100644 qucs-core/src/components/verilog/bsim4v30nMOS.va delete mode 100644 qucs-core/src/components/verilog/bsim4v30pMOS.va delete mode 100644 qucs-core/src/components/verilog/fbh_hbt-2_2a.va delete mode 100644 qucs-core/src/components/verilog/hicumL0V1p12.va delete mode 100644 qucs-core/src/components/verilog/hicumL0V1p2.va delete mode 100644 qucs-core/src/components/verilog/hicumL0V1p2g.va delete mode 100644 qucs-core/src/components/verilog/hicumL0V1p3.va delete mode 100644 qucs-core/src/components/verilog/hicumL2V2p11.va delete mode 100644 qucs-core/src/components/verilog/hicumL2V2p22.va delete mode 100644 qucs-core/src/components/verilog/hicumL2V2p23.va delete mode 100644 qucs-core/src/components/verilog/hicumL2V2p24.va delete mode 100644 qucs-core/src/components/verilog/hicumL2V2p31n.va delete mode 100644 qucs/qucs/bitmaps/bsim3v34nMOS.png delete mode 100644 qucs/qucs/bitmaps/bsim3v34pMOS.png delete mode 100644 qucs/qucs/bitmaps/bsim4v30nMOS.png delete mode 100644 qucs/qucs/bitmaps/bsim4v30pMOS.png delete mode 100644 qucs/qucs/bitmaps/hicumL2V2p31n.png delete mode 100644 qucs/qucs/components/HBT_X.cpp delete mode 100644 qucs/qucs/components/HBT_X.h delete mode 100644 qucs/qucs/components/bsim3v34nMOS.cpp delete mode 100644 qucs/qucs/components/bsim3v34nMOS.h delete mode 100644 qucs/qucs/components/bsim3v34pMOS.cpp delete mode 100644 qucs/qucs/components/bsim3v34pMOS.h delete mode 100644 qucs/qucs/components/bsim4v30nMOS.cpp delete mode 100644 qucs/qucs/components/bsim4v30nMOS.h delete mode 100644 qucs/qucs/components/bsim4v30pMOS.cpp delete mode 100644 qucs/qucs/components/bsim4v30pMOS.h delete mode 100644 qucs/qucs/components/hic0_full.cpp delete mode 100644 qucs/qucs/components/hic0_full.h delete mode 100644 qucs/qucs/components/hic2_full.cpp delete mode 100644 qucs/qucs/components/hic2_full.h delete mode 100644 qucs/qucs/components/hicumL0V1p2.cpp delete mode 100644 qucs/qucs/components/hicumL0V1p2.h delete mode 100644 qucs/qucs/components/hicumL0V1p2g.cpp delete mode 100644 qucs/qucs/components/hicumL0V1p2g.h delete mode 100644 qucs/qucs/components/hicumL0V1p3.cpp delete mode 100644 qucs/qucs/components/hicumL0V1p3.h delete mode 100644 qucs/qucs/components/hicumL2V2p1.cpp delete mode 100644 qucs/qucs/components/hicumL2V2p1.h delete mode 100644 qucs/qucs/components/hicumL2V2p23.cpp delete mode 100644 qucs/qucs/components/hicumL2V2p23.h delete mode 100644 qucs/qucs/components/hicumL2V2p24.cpp delete mode 100644 qucs/qucs/components/hicumL2V2p24.h delete mode 100644 qucs/qucs/components/hicumL2V2p31n.cpp delete mode 100644 qucs/qucs/components/hicumL2V2p31n.h diff --git a/qucs-core/src/components/component_id.h b/qucs-core/src/components/component_id.h index 869032eba9..6ae50a221b 100644 --- a/qucs-core/src/components/component_id.h +++ b/qucs-core/src/components/component_id.h @@ -145,20 +145,11 @@ enum circuit_type { CIR_BUFFER, // verilog devices - CIR_HBT_X, - CIR_hicumL2V2p1, CIR_mod_amp, - CIR_hic2_full, CIR_log_amp, - CIR_hic0_full, CIR_potentiometer, CIR_MESFET, CIR_EKV26MOS, - CIR_hicumL0V1p2, - CIR_hicumL0V1p2g, - CIR_hicumL0V1p3, - CIR_hicumL2V2p23, - CIR_hicumL2V2p24, CIR_photodiode, CIR_phototransistor, CIR_nigbt, diff --git a/qucs-core/src/components/components.h b/qucs-core/src/components/components.h index 27a1d0270c..0eb779b321 100644 --- a/qucs-core/src/components/components.h +++ b/qucs-core/src/components/components.h @@ -142,28 +142,14 @@ #include "digital/digisource.h" #include "digital/buffer.h" -#include "verilog/hicumL2V2p11.core.h" -#include "verilog/fbh_hbt-2_2a.core.h" -#include "verilog/mod_amp.core.h" -#include "verilog/hicumL2V2p22.core.h" +#include "verilog/EKV26MOS.core.h" #include "verilog/log_amp.core.h" -#include "verilog/hicumL0V1p12.core.h" -#include "verilog/potentiometer.core.h" #include "verilog/MESFET.core.h" -#include "verilog/EKV26MOS.core.h" -#include "verilog/bsim3v34nMOS.core.h" -#include "verilog/bsim3v34pMOS.core.h" -#include "verilog/bsim4v30nMOS.core.h" -#include "verilog/bsim4v30pMOS.core.h" -#include "verilog/hicumL0V1p2.core.h" -#include "verilog/hicumL0V1p2g.core.h" -#include "verilog/hicumL0V1p3.core.h" -#include "verilog/hicumL2V2p23.core.h" -#include "verilog/hicumL2V2p24.core.h" -#include "verilog/hicumL2V2p31n.core.h" +#include "verilog/mod_amp.core.h" +#include "verilog/nigbt.core.h" #include "verilog/photodiode.core.h" #include "verilog/phototransistor.core.h" -#include "verilog/nigbt.core.h" +#include "verilog/potentiometer.core.h" #include "verilog/dff_SR.core.h" #include "verilog/tff_SR.core.h" diff --git a/qucs-core/src/components/verilog/CMakeLists.txt b/qucs-core/src/components/verilog/CMakeLists.txt index c9fbcdd52b..988fcaf2cc 100644 --- a/qucs-core/src/components/verilog/CMakeLists.txt +++ b/qucs-core/src/components/verilog/CMakeLists.txt @@ -16,10 +16,6 @@ SET( VA_FILES andor4x3 andor4x4 binarytogrey4bit - bsim3v34nMOS - bsim3v34pMOS - bsim4v30nMOS - bsim4v30pMOS comp_1bit comp_2bit comp_4bit @@ -32,19 +28,9 @@ SET( VA_FILES EKV26MOS fa1b fa2b - fbh_hbt-2_2a gatedDlatch greytobinary4bit ha1b - hicumL0V1p12 - hicumL0V1p2 - hicumL0V1p2g - hicumL0V1p3 - hicumL2V2p11 - hicumL2V2p22 - hicumL2V2p23 - hicumL2V2p24 - hicumL2V2p31n hpribin4bit jkff_SR log_amp diff --git a/qucs-core/src/components/verilog/Makefile.am b/qucs-core/src/components/verilog/Makefile.am index 6bbb3380dc..eed70186f4 100644 --- a/qucs-core/src/components/verilog/Makefile.am +++ b/qucs-core/src/components/verilog/Makefile.am @@ -44,28 +44,14 @@ XML_BUILD = \ .va.cpp: VA_FILES = \ - fbh_hbt-2_2a.va \ - hicumL2V2p11.va \ - mod_amp.va \ - hicumL2V2p22.va \ + EKV26MOS.va \ log_amp.va \ - hicumL0V1p12.va \ - potentiometer.va \ MESFET.va \ - EKV26MOS.va \ - bsim3v34nMOS.va \ - bsim3v34pMOS.va \ - bsim4v30nMOS.va \ - bsim4v30pMOS.va \ - hicumL0V1p2.va \ - hicumL0V1p2g.va \ - hicumL0V1p3.va \ - hicumL2V2p23.va \ - hicumL2V2p24.va \ - hicumL2V2p31n.va \ + mod_amp.va \ + nigbt.va \ photodiode.va \ phototransistor.va \ - nigbt.va \ + potentiometer.va \ \ dff_SR.va \ tff_SR.va \ diff --git a/qucs-core/src/components/verilog/bsim3v34nMOS.va b/qucs-core/src/components/verilog/bsim3v34nMOS.va deleted file mode 100644 index bc495ea1d3..0000000000 --- a/qucs-core/src/components/verilog/bsim3v34nMOS.va +++ /dev/null @@ -1,3266 +0,0 @@ -/*****************************************************************/ -/* Berkeley BSIM3v3.2.0 & BSIM3v3.2.4 (default) Verilog-A model */ -/*****************************************************************/ -// -// UPDATED March 19 2004 -// Contributed By: -// Geoffrey Coram, Ph.D Senior CAD Engineer Analog Devices, Inc. -// -// Qucs port of BSIM3v34 Mike Brinson, May 2013. -// Open source Verilog-A code can be found at: -// "Silvaco Offers Free Open-Source Verilog-A Device Models": -// http://www.silvaco.com/news/pressreleases/2004_03_02_01.html -// https://dynamic.silvaco.com/dynamicweb/jsp/downloads/EntryAction.do?action=silen-menu&key=2206&format=22 -// -// Technical details of the BSIM3,34 compact device model can be found at: -// William Liu, "MOSFET Models for SPICE Simulation including BSIM3v3 and BSIM4", -// Wiley _Interscience, John Wiley & Sons Inc., New York, 2001. -// ISBN: 0-471-9697-4. -// -// Changes to original code needed to compile with ADMS 2.30/Qucs are marked below. -// - - -`define VOLTAGE_MAXDELTA 0.3 - -// `include "discipline.h" // Change MEB. - `include "disciplines.vams" -// Following line must be uncomment for using NQS charge model (NQSMOD=1) -//`define NQSMOD - -//****** Physical constants ******// -`define EPSOX 3.453133e-11 -`define KboQ 8.617087e-5 -`define EPSSI 1.03594e-10 -`define Charge_q 1.60219e-19 -`define CONSTvt0 0.02586419 -`define CONSTroot2 1.41421356 - -//****** Mathematical constants and constants of limitation ******// -`define PI 3.141592654 -`define EXP_THRESHOLD 34.0 -`define MIN_EXP 1.713908431e-15 -`define MAX_EXP 5.834617425e14 - -// //****** Constants for the model ******// -`define DELTA_1 0.02 -`define DELTA_3 0.02 -`define DELTA_4 0.02 - -module bsim3v34nMOS(drain, gate, source, bulk); // module name changed to bsim3v34nmos, MEB. - inout drain, gate, source, bulk; - electrical drain, gate, source, bulk; - electrical drainp, sourcep; // internal nodes -`ifdef NQSMOD - electrical q; // NQS charge model node -`endif - - //****** Device Parameters ******// - parameter real L = 3.5e-6; - parameter real W = 5.0e-6; - parameter real PS = 8.0e-6; - parameter real PD = 8.0e-6; - parameter real AS = 12.0e-12; - parameter real AD = 12.0e-12; - parameter real NRS = 10.0; // Number of source diffusion squares - parameter real NRD = 10.0; // Number of drain diffusion squares - parameter real NQSMOD = 0; // Non-quasi-static model selector - - parameter real GMIN = 1e-12; - - // Versions can be 3.20 or 3.24 - // (BSIM3v3.2.0 or BSIM3v3.2.4) - parameter real VERSION = 3.24; - parameter real PARAMCHK = 0; - - //****** Model Selectors/Controllers ******// Modifications to compile cleanly, MEB. - parameter real MOBMOD = 1; // Mobility model selector - parameter real CAPMOD = 3; // Capacitance model selector - parameter real NOIMOD = 4; - parameter real BINUNIT = 1; // Bin unit selector - - parameter real TOX = 150.0e-10; // Gate oxide thickness in meters - parameter real TOXM = 150.0e-10; // = TOX Gate oxide thickness used in extraction - - parameter real CDSC = 2.4e-4; // Drain/Source and channel coupling capacitance - parameter real CDSCB = 0.0; // Body-bias dependence of cdsc - parameter real CDSCD = 0.0; // Drain-bias dependence of cdsc - parameter real CIT = 0.0; // Interface state capacitance - parameter real NFACTOR = 1; // Subthreshold swing Coefficient - parameter real XJ = 0.15e-6; // Junction depth in meters - parameter real VSAT = 8.0e4; // Saturation velocity at tnom - parameter real AT = 3.3e4; // Temperature coefficient of vsat - parameter real A0 = 1.0; // Non-uniform depletion width effect coefficient. - parameter real AGS = 0.0; // Gate bias coefficient of Abulk. - parameter real A1 = 0.0; // Non-saturation effect coefficient - parameter real A2 = 1.0; // Non-saturation effect coefficient - parameter real KETA = -0.047; // Body-bias coefficient of non-uniform depletion width effect. - parameter real NSUB = -99.0; // Substrate doping concentration - parameter real NCH = -99.0; // Channel doping concentration - parameter real NGATE = 0; // Poly-gate doping concentration - parameter real GAMMA1 = -99.0; // Vth body coefficient - parameter real GAMMA2 = -99.0; // Vth body coefficient - parameter real VBX = -99.0; // Vth transition body Voltage - parameter real VBM = -3.0; // Maximum body voltage - - parameter real XT = -99.0; // Doping depth - parameter real K1 = -99.0; // Bulk effect coefficient 1 - parameter real KT1 = -0.11; // Temperature coefficient of Vth - parameter real KT1L = 0.0; // Temperature coefficient of Vth - parameter real KT2 = 0.022; // Body-coefficient of kt1 - parameter real K2 = -99.0; // Bulk effect coefficient 2 - parameter real K3 = 80.0; // Narrow width effect coefficient - parameter real K3B = 0.0; // Body effect coefficient of k3 - parameter real W0 = 2.5e-6; // Narrow width effect parameter - parameter real NLX = 1.74e-7; // Lateral non-uniform doping effect - parameter real DVT0 = 2.2; // Short channel effect coeff. 0 - parameter real DVT1 = 0.53; // Short channel effect coeff. 1 - parameter real DVT2 = -0.032; // Short channel effect coeff. 2 - parameter real DVT0W = 0.0; // Narrow Width coeff. 0 - parameter real DVT1W = 5.3e6; // Narrow Width effect coeff. 1 - parameter real DVT2W = -0.032; // Narrow Width effect coeff. 2 - parameter real DROUT = 0.56; // DIBL coefficient of output resistance - parameter real DSUB = 0.56; // = DROUT DIBL coefficient in the subthreshold region - parameter real VTHO = 0.7; // Threshold voltage - parameter real VTH0 = 0.7; // Threshold voltage - - parameter real UA = 2.25e-9; // Linear gate dependence of mobility - parameter real UA1 = 4.31e-9; // Temperature coefficient of ua - parameter real UB = 5.87e-19; // Quadratic gate dependence of mobility - parameter real UB1 = -7.61e-18; // Temperature coefficient of ub - parameter real UC = -99.0; // Body-bias dependence of mobility - parameter real UC1 = -99.0; // Temperature coefficient of uc - parameter real U0 = -99.0; // Low-field mobility at Tnom - parameter real UTE = -1.5; // Temperature coefficient of mobility - parameter real VOFF = -0.08; // Threshold voltage offset - parameter real TNOM = 26.85; // Parameter measurement temperature in C degree - parameter real CGSO = -99.0; // Gate-source overlap capacitance per width - parameter real CGDO = -99.0; // Gate-drain overlap capacitance per width - parameter real CGBO = -99.0; // Gate-bulk overlap capacitance per length - parameter real XPART = 0.4; // Channel charge partitioning - parameter real ELM = 5.0; // Non-quasi-static Elmore Constant Parameter - parameter real DELTA = 0.01; // Effective Vds parameter - parameter real RSH = 0.0; // Source-drain sheet resistance - parameter real RDSW = 0; // Source-drain resistance per width - - parameter real PRWG = 0.0; // Gate-bias effect on parasitic resistance - parameter real PRWB = 0.0; // Body-effect on parasitic resistance - parameter real PRT = 0.0; // Temperature coefficient of parasitic resistance - parameter real ETA0 = 0.08; // Subthreshold region DIBL coefficient - parameter real ETAB = -0.07; // Subthreshold region DIBL coefficient - parameter real PCLM = 1.3; // Channel length modulation Coefficient - parameter real PDIBLC1 = 0.39; // Drain-induced barrier lowering coefficient - parameter real PDIBLC2 = 0.0086; // Drain-induced barrier lowering coefficient - parameter real PDIBLCB = 0.0; // Body-effect on drain-induced barrier lowering - parameter real PSCBE1 = 4.24e8; // Substrate current body-effect coefficient - parameter real PSCBE2 = 1.0e-5; // Substrate current body-effect coefficient - parameter real PVAG = 0.0; // Gate dependence of output resistance parameter - parameter real JS = 1.0E-4; // Source/drain junction reverse saturation current density - parameter real JSW = 0.0; // Sidewall junction reverse saturation current density - parameter real PB = 1.0; // Source/drain junction built-in potential - parameter real NJ = 1.0; // Source/drain junction emission coefficient - parameter real XTI = 3.0; // Junction current temperature exponent - parameter real MJ = 0.5; // Source/drain bottom junction capacitance grading coefficient - parameter real PBSW = 1.0; // Source/drain sidewall junction capacitance built in potential - parameter real MJSW = 0.33; // Source/drain sidewall junction capacitance grading coefficient - parameter real PBSWG = 1.0; // = PBSW Source/drain (gate side) sidewall junction capacitance built in potential - parameter real MJSWG = 0.33; // = MJSW Source/drain (gate side) sidewall junction capacitance grading coefficient - parameter real CJ = 5.0E-4; // Source/drain bottom junction capacitance per unit area - parameter real VFBCV = -1.0; // Flat Band Voltage parameter for capmod=0 only - parameter real VFB = -99.0; // Flat Band Voltage - parameter real CJSW = 5.0E-10; // Source/drain sidewall junction capacitance per unit periphery - parameter real CJSWG = 5.0e-10; // = CJSW Source/drain (gate side) sidewall junction capacitance per unit width - parameter real TPB = 0.0; // Temperature coefficient of pb - parameter real TCJ = 0.0; // Temperature coefficient of cj - parameter real TPBSW = 0.0; // Temperature coefficient of pbsw - parameter real TCJSW = 0.0; // Temperature coefficient of cjsw - parameter real TPBSWG = 0.0; // Temperature coefficient of pbswg - parameter real TCJSWG = 0.0; // Temperature coefficient of cjswg - parameter real ACDE = 1.0; // Exponential coefficient for finite charge thickness - parameter real MOIN = 15.0; // Coefficient for gate-bias dependent surface potential - parameter real NOFF = 1.0; // C-V turn-on/off parameter - parameter real VOFFCV = 0.0; // C-V lateral-shift parameter - parameter real LINT = 0.0; // Length reduction parameter - parameter real LL = 0.0; // Length reduction parameter - parameter real LLC = 0.0; // = LL Length reduction parameter for CV - parameter real LLN = 1.0; // Length reduction parameter - parameter real LW = 0.0; // Length reduction parameter - parameter real LWC = 0.0; // = LW Length reduction parameter for CV - parameter real LWN = 1.0; // Length reduction parameter - parameter real LWL = 0.0; // Length reduction parameter - parameter real LWLC = 0.0; // = LWL Length reduction parameter for CV - parameter real LMIN = 0.0; // Minimum length for the model - parameter real LMAX = 1.0; // Maximum length for the model - parameter real WR = 1.0; // Width dependence of rds - parameter real WINT = 0.0; // Width reduction parameter - parameter real DWG = 0.0; // Width reduction parameter - parameter real DWB = 0.0; // Width reduction parameter - parameter real WL = 0.0; // Width reduction parameter - parameter real WLC = 0.0; // = WL Width reduction parameter for CV - parameter real WLN = 1.0; // Width reduction parameter - parameter real WW = 0.0; // Width reduction parameter - parameter real WWC = 0.0; // = WW Width reduction parameter for CV - parameter real WWN = 1.0; // Width reduction parameter - parameter real WWL = 0.0; // Width reduction parameter - parameter real WWLC = 0.0; // = WWL Width reduction parameter for CV - parameter real WMIN = 0.0; // Minimum width for the model - parameter real WMAX = 1.0; // Maximum width for the model - parameter real B0 = 0.0; // Abulk narrow width parameter - parameter real B1 = 0.0; // Abulk narrow width parameter - parameter real CGSL = 0.0; // New C-V model parameter - parameter real CGDL = 0.0; // New C-V model parameter - parameter real CKAPPA = 0.6; // New C-V model parameter - parameter real CF = -99.0; // Fringe capacitance parameter - parameter real CLC = 0.1e-6; // Vdsat parameter for C-V model - parameter real CLE = 0.6; // Vdsat parameter for C-V model - parameter real DWC = 0.0; // = WINTDelta W for C-V model - parameter real DLC = -99.0; // Delta L for C-V model - parameter real ALPHA0 = 0.0; // substrate current model parameter - parameter real ALPHA1 = 0.0; // substrate current model parameter - parameter real BETA0 = 30.0; // substrate current model parameter - parameter real IJTH = 0.1; // Diode limiting current - - /*** Length dependance model parameters ***/ - parameter real LCDSC = 0.0; // Length dependence of cdsc - parameter real LCDSCB = 0.0; // Length dependence of cdscb - parameter real LCDSCD = 0.0; // Length dependence of cdscd - parameter real LCIT = 0.0; // Length dependence of cit - parameter real LNFACTOR = 0.0; // Length dependence of nfactor - parameter real LXJ = 0.0; // Length dependence of xj - parameter real LVSAT = 0.0; // Length dependence of vsat - parameter real LAT = 0.0; // Length dependence of at - parameter real LA0 = 0.0; // Length dependence of a0 - parameter real LAGS = 0.0; // Length dependence of ags - parameter real LA1 = 0.0; // Length dependence of a1 - parameter real LA2 = 0.0; // Length dependence of a2 - parameter real LKETA = 0.0; // Length dependence of keta - parameter real LNSUB = 0.0; // Length dependence of nsub - parameter real LNCH = 0.0; // Length dependence of nch - parameter real LNGATE = 0.0; // Length dependence of ngate - parameter real LGAMMA1 = -99.0; // Length dependence of gamma1 - parameter real LGAMMA2 = -99.0; // Length dependence of gamma2 - parameter real LVBX = -99.0; // Length dependence of vbx - parameter real LVBM = 0.0; // Length dependence of vbm - parameter real LXT = 0.0; // Length dependence of xt - parameter real LK1 = -99.0; // Length dependence of k1 - parameter real LKT1 = 0.0; // Length dependence of kt1 - parameter real LKT1L = 0.0; // Length dependence of kt1l - parameter real LKT2 = 0.0; // Length dependence of kt2 - parameter real LK2 = -99.0; // Length dependence of k2 - parameter real LK3 = 0.0; // Length dependence of k3 - parameter real LK3B = 0.0; // Length dependence of k3b - parameter real LW0 = 0.0; // Length dependence of w0 - parameter real LNLX = 0.0; // Length dependence of nlx - parameter real LDVT0 = 0.0; // Length dependence of dvt0 - parameter real LDVT1 = 0.0; // Length dependence of dvt1 - parameter real LDVT2 = 0.0; // Length dependence of dvt2 - parameter real LDVT0W = 0.0; // Length dependence of dvt0w - parameter real LDVT1W = 0.0; // Length dependence of dvt1w - parameter real LDVT2W = 0.0; // Length dependence of dvt2w - parameter real LDROUT = 0.0; // Length dependence of drout - parameter real LDSUB = 0.0; // Length dependence of dsub - parameter real LVTH0 = 0.0; // Length dependence of vto - parameter real LVTHO = 0.0; // Length dependence of vto - parameter real LUA = 0.0; // Length dependence of ua - parameter real LUA1 = 0.0; // Length dependence of ua1 - parameter real LUB = 0.0; // Length dependence of ub - parameter real LUB1 = 0.0; // Length dependence of ub1 - parameter real LUC = 0.0; // Length dependence of uc - parameter real LUC1 = 0.0; // Length dependence of uc1 - parameter real LU0 = 0.0; // Length dependence of u0 - parameter real LUTE = 0.0; // Length dependence of ute - parameter real LVOFF = 0.0; // Length dependence of voff - parameter real LELM = 0.0; // Length dependence of elm - parameter real LDELTA = 0.0; // Length dependence of delta - parameter real LRDSW = 0.0; // Length dependence of rdsw - parameter real LPRWG = 0.0; // Length dependence of prwg - parameter real LPRWB = 0.0; // Length dependence of prwb - parameter real LPRT = 0.0; // Length dependence of prt - parameter real LETA0 = 0.0; // Length dependence of eta0 - parameter real LETAB = 0.0; // Length dependence of etab - parameter real LPCLM = 0.0; // Length dependence of pclm - parameter real LPDIBLC1 = 0.0; // Length dependence of pdiblc1 - parameter real LPDIBLC2 = 0.0; // Length dependence of pdiblc2 - parameter real LPDIBLCB = 0.0; // Length dependence of pdiblcb - parameter real LPSCBE1 = 0.0; // Length dependence of pscbe1 - parameter real LPSCBE2 = 0.0; // Length dependence of pscbe2 - parameter real LPVAG = 0.0; // Length dependence of pvag - parameter real LWR = 0.0; // Length dependence of wr - parameter real LDWG = 0.0; // Length dependence of dwg - parameter real LDWB = 0.0; // Length dependence of dwb - parameter real LB0 = 0.0; // Length dependence of b0 - parameter real LB1 = 0.0; // Length dependence of b1 - parameter real LCGSL = 0.0; // Length dependence of cgsl - parameter real LCGDL = 0.0; // Length dependence of cgdl - parameter real LCKAPPA = 0.0; // Length dependence of ckappa - parameter real LCF = 0.0; // Length dependence of cf - parameter real LCLC = 0.0; // Length dependence of clc - parameter real LCLE = 0.0; // Length dependence of cle - parameter real LALPHA0 = 0.0; // Length dependence of alpha0 - parameter real LALPHA1 = 0.0; // Length dependence of alpha1 - parameter real LBETA0 = 0.0; // Length dependence of beta0 - parameter real LVFBCV = 0.0; // Length dependence of vfbcv - parameter real LVFB = 0.0; // Length dependence of vfb - parameter real LACDE = 0.0; // Length dependence of acde - parameter real LMOIN = 0.0; // Length dependence of moin - parameter real LNOFF = 0.0; // Length dependence of noff - parameter real LVOFFCV = 0.0; // Length dependence of voffcv - - parameter real WCDSC = 0.0; // Width dependence of cdsc - parameter real WCDSCB = 0.0; // Width dependence of cdscb - parameter real WCDSCD = 0.0; // Width dependence of cdscd - parameter real WCIT = 0.0; // Width dependence of cit - parameter real WNFACTOR = 0.0; // Width dependence of nfactor - parameter real WXJ = 0.0; // Width dependence of xj - parameter real WVSAT = 0.0; // Width dependence of vsat - parameter real WAT = 0.0; // Width dependence of at - parameter real WA0 = 0.0; // Width dependence of a0 - parameter real WAGS = 0.0; // Width dependence of ags - parameter real WA1 = 0.0; // Width dependence of a1 - parameter real WA2 = 0.0; // Width dependence of a2 - parameter real WKETA = 0.0; // Width dependence of keta - parameter real WNSUB = 0.0; // Width dependence of nsub - parameter real WNCH = 0.0; // Width dependence of nch - parameter real WNGATE = 0.0; // Width dependence of ngate - parameter real WGAMMA1 = -99.0; // Width dependence of gamma1 - parameter real WGAMMA2 = -99.0; // Width dependence of gamma2 - parameter real WVBX = -99.0; // Width dependence of vbx - parameter real WVBM = 0.0; // Width dependence of vbm - parameter real WXT = 0.0; // Width dependence of xt - parameter real WK1 = -99.0; // Width dependence of k1 - parameter real WKT1 = 0.0; // Width dependence of kt1 - parameter real WKT1L = 0.0; // Width dependence of kt1l - parameter real WKT2 = 0.0; // Width dependence of kt2 - parameter real WK2 = -99.0; // Width dependence of k2 - parameter real WK3 = 0.0; // Width dependence of k3 - parameter real WK3B = 0.0; // Width dependence of k3b - parameter real WW0 = 0.0; // Width dependence of w0 - parameter real WNLX = 0.0; // Width dependence of nlx - parameter real WDVT0 = 0.0; // Width dependence of dvt0 - parameter real WDVT1 = 0.0; // Width dependence of dvt1 - parameter real WDVT2 = 0.0; // Width dependence of dvt2 - parameter real WDVT0W = 0.0; // Width dependence of dvt0w - parameter real WDVT1W = 0.0; // Width dependence of dvt1w - parameter real WDVT2W = 0.0; // Width dependence of dvt2w - parameter real WDROUT = 0.0; // Width dependence of drout - parameter real WDSUB = 0.0; // Width dependence of dsub - parameter real WVTH0 = 0.0; // Width dependence of vto - parameter real WVTHO = 0.0; // Width dependence of vto - parameter real WUA = 0.0; // Width dependence of ua - parameter real WUA1 = 0.0; // Width dependence of ua1 - parameter real WUB = 0.0; // Width dependence of ub - parameter real WUB1 = 0.0; // Width dependence of ub1 - parameter real WUC = 0.0; // Width dependence of uc - parameter real WUC1 = 0.0; // Width dependence of uc1 - parameter real WU0 = 0.0; // Width dependence of u0 - parameter real WUTE = 0.0; // Width dependence of ute - parameter real WVOFF = 0.0; // Width dependence of voff - parameter real WELM = 0.0; // Width dependence of elm - parameter real WDELTA = 0.0; // Width dependence of delta - parameter real WRDSW = 0.0; // Width dependence of rdsw - parameter real WPRWG = 0.0; // Width dependence of prwg - parameter real WPRWB = 0.0; // Width dependence of prwb - parameter real WPRT = 0.0; // Width dependence of prt - parameter real WETA0 = 0.0; // Width dependence of eta0 - parameter real WETAB = 0.0; // Width dependence of etab - parameter real WPCLM = 0.0; // Width dependence of pclm - parameter real WPDIBLC1 = 0.0; // Width dependence of pdiblc1 - parameter real WPDIBLC2 = 0.0; // Width dependence of pdiblc2 - parameter real WPDIBLCB = 0.0; // Width dependence of pdiblcb - parameter real WPSCBE1 = 0.0; // Width dependence of pscbe1 - parameter real WPSCBE2 = 0.0; // Width dependence of pscbe2 - parameter real WPVAG = 0.0; // Width dependence of pvag - parameter real WWR = 0.0; // Width dependence of wr - parameter real WDWG = 0.0; // Width dependence of dwg - parameter real WDWB = 0.0; // Width dependence of dwb - parameter real WB0 = 0.0; // Width dependence of b0 - parameter real WB1 = 0.0; // Width dependence of b1 - parameter real WCGSL = 0.0; // Width dependence of cgsl - parameter real WCGDL = 0.0; // Width dependence of cgdl - parameter real WCKAPPA = 0.0; // Width dependence of ckappa - parameter real WCF = 0.0; // Width dependence of cf - parameter real WCLC = 0.0; // Width dependence of clc - parameter real WCLE = 0.0; // Width dependence of cle - parameter real WALPHA0 = 0.0; // Width dependence of alpha0 - parameter real WALPHA1 = 0.0; // Width dependence of alpha1 - parameter real WBETA0 = 0.0; // Width dependence of beta0 - parameter real WVFBCV = 0.0; // Width dependence of vfbcv - parameter real WVFB = 0.0; // Width dependence of vfb - parameter real WACDE = 0.0; // Width dependence of acde - parameter real WMOIN = 0.0; // Width dependence of moin - parameter real WNOFF = 0.0; // Width dependence of noff - parameter real WVOFFCV = 0.0; // Width dependence of voffcv - - parameter real PCDSC = 0.0; // Cross-term dependence of cdsc - parameter real PCDSCB = 0.0; // Cross-term dependence of cdscb - parameter real PCDSCD = 0.0; // Cross-term dependence of cdscd - parameter real PCIT = 0.0; // Cross-term dependence of cit - parameter real PNFACTOR = 0.0; // Cross-term dependence of nfactor - parameter real PXJ = 0.0; // Cross-term dependence of xj - parameter real PVSAT = 0.0; // Cross-term dependence of vsat - parameter real PAT = 0.0; // Cross-term dependence of at - parameter real PA0 = 0.0; // Cross-term dependence of a0 - parameter real PAGS = 0.0; // Cross-term dependence of ags - parameter real PA1 = 0.0; // Cross-term dependence of a1 - parameter real PA2 = 0.0; // Cross-term dependence of a2 - parameter real PKETA = 0.0; // Cross-term dependence of keta - parameter real PNSUB = 0.0; // Cross-term dependence of nsub - parameter real PNCH = 0.0; // Cross-term dependence of nch - parameter real PNGATE = 0.0; // Cross-term dependence of ngate - parameter real PGAMMA1 = -99.0; // Cross-term dependence of gamma1 - parameter real PGAMMA2 = -99.0; // Cross-term dependence of gamma2 - parameter real PVBX = -99.0; // Cross-term dependence of vbx - parameter real PVBM = 0.0; // Cross-term dependence of vbm - parameter real PXT = 0.0; // Cross-term dependence of xt - parameter real PK1 = -99.0; // Cross-term dependence of k1 - parameter real PKT1 = 0.0; // Cross-term dependence of kt1 - parameter real PKT1L = 0.0; // Cross-term dependence of kt1l - parameter real PKT2 = 0.0; // Cross-term dependence of kt2 - parameter real PK2 = -99.0; // Cross-term dependence of k2 - parameter real PK3 = 0.0; // Cross-term dependence of k3 - parameter real PK3B = 0.0; // Cross-term dependence of k3b - parameter real PW0 = 0.0; // Cross-term dependence of w0 - parameter real PNLX = 0.0; // Cross-term dependence of nlx - parameter real PDVT0 = 0.0; // Cross-term dependence of dvt0 - parameter real PDVT1 = 0.0; // Cross-term dependence of dvt1 - parameter real PDVT2 = 0.0; // Cross-term dependence of dvt2 - parameter real PDVT0W = 0.0; // Cross-term dependence of dvt0w - parameter real PDVT1W = 0.0; // Cross-term dependence of dvt1w - parameter real PDVT2W = 0.0; // Cross-term dependence of dvt2w - parameter real PDROUT = 0.0; // Cross-term dependence of drout - parameter real PDSUB = 0.0; // Cross-term dependence of dsub - parameter real PVTH0 = 0.0; // Cross-term dependence of vto - parameter real PVTHO = 0.0; // Cross-term dependence of vto - parameter real PUA = 0.0; // Cross-term dependence of ua - parameter real PUA1 = 0.0; // Cross-term dependence of ua1 - parameter real PUB = 0.0; // Cross-term dependence of ub - parameter real PUB1 = 0.0; // Cross-term dependence of ub1 - parameter real PUC = 0.0; // Cross-term dependence of uc - parameter real PUC1 = 0.0; // Cross-term dependence of uc1 - parameter real PU0 = 0.0; // Cross-term dependence of u0 - parameter real PUTE = 0.0; // Cross-term dependence of ute - parameter real PVOFF = 0.0; // Cross-term dependence of voff - parameter real PELM = 0.0; // Cross-term dependence of elm - parameter real PDELTA = 0.0; // Cross-term dependence of delta - parameter real PRDSW = 0.0; // Cross-term dependence of rdsw - parameter real PPRWG = 0.0; // Cross-term dependence of prwg - parameter real PPRWB = 0.0; // Cross-term dependence of prwb - parameter real PPRT = 0.0; // Cross-term dependence of prt - parameter real PETA0 = 0.0; // Cross-term dependence of eta0 - parameter real PETAB = 0.0; // Cross-term dependence of etab - parameter real PPCLM = 0.0; // Cross-term dependence of pclm - parameter real PPDIBLC1 = 0.0; // Cross-term dependence of pdiblc1 - parameter real PPDIBLC2 = 0.0; // Cross-term dependence of pdiblc2 - parameter real PPDIBLCB = 0.0; // Cross-term dependence of pdiblcb - parameter real PPSCBE1 = 0.0; // Cross-term dependence of pscbe1 - parameter real PPSCBE2 = 0.0; // Cross-term dependence of pscbe2 - parameter real PPVAG = 0.0; // Cross-term dependence of pvag - parameter real PWR = 0.0; // Cross-term dependence of wr - parameter real PDWG = 0.0; // Cross-term dependence of dwg - parameter real PDWB = 0.0; // Cross-term dependence of dwb - parameter real PB0 = 0.0; // Cross-term dependence of b0 - parameter real PB1 = 0.0; // Cross-term dependence of b1 - parameter real PCGSL = 0.0; // Cross-term dependence of cgsl - parameter real PCGDL = 0.0; // Cross-term dependence of cgdl - parameter real PCKAPPA = 0.0; // Cross-term dependence of ckappa - parameter real PCF = 0.0; // Cross-term dependence of cf - parameter real PCLC = 0.0; // Cross-term dependence of clc - parameter real PCLE = 0.0; // Cross-term dependence of cle - parameter real PALPHA0 = 0.0; // Cross-term dependence of alpha0 - parameter real PALPHA1 = 0.0; // Cross-term dependence of alpha1 - parameter real PBETA0 = 0.0; // Cross-term dependence of beta0 - parameter real PVFBCV = 0.0; // Cross-term dependence of vfbcv - parameter real PVFB = 0.0; // Cross-term dependence of vfb - parameter real PACDE = 0.0; // Cross-term dependence of acde - parameter real PMOIN = 0.0; // Cross-term dependence of moin - parameter real PNOFF = 0.0; // Cross-term dependence of noff - parameter real PVOFFCV = 0.0; // Cross-term dependence of voffcv -// -// Noise added to Verilog-A BSIM 3 code - NOIMOD = 4 only implemented, MEB. - parameter real KF = 0.0; // Proportional constant in Flicker noise. - parameter real AF = 1.0; // Current exponent in flicker noise. - parameter real EF = 1.0; // Frequency exponent in flicker noise. - - real TYPE; - - integer Fatal_Flag; - - real tox, cox, vth0, nch, ngate, uc, uc1, u0, tnom; - real dlcGiven, cgso, cgdo, cgbo; - real pdibl1, pdibl2, pdiblb; - - real jctSatCurDensity; - real jctSidewallSatCurDensity; - real bulkJctPotential; - real jctEmissionCoeff; - real jctTempExponent; - real bulkJctBotGradingCoeff; - real sidewallJctPotential; - real bulkJctSideGradingCoeff; - real GatesidewallJctPotential; - real bulkJctGateSideGradingCoeff; - real unitAreaJctCap; - real unitAreaTempJctCap; - real unitLengthSidewallJctCap; - real unitLengthSidewallTempJctCap; - real unitLengthGateSidewallJctCap; - real unitLengthGateSidewallTempJctCap; - - - real cf; - real lnpeak, lngate, lvth0; - real lpdibl1, lpdibl2, lpdiblb; - real wnpeak, wngate, wvth0; - real wpdibl1, wpdibl2, wpdiblb; - real pnpeak, pngate, pvth0; - real ppdibl1, ppdibl2, ppdiblb; - - real Temp, Tnom, TRatio, delTemp; - real factor1, Vtm0, Eg0, ni, vtm, Eg; - real T_0, T1, T2, T3, T4, T5, T6, T7, T8, T9, T10; // Changed T0 to T_0 : Using T0 causes ADMS 2.30 compile erors, MEB. - real jctTempSatCurDensity, jctSidewallTempSatCurDensity; - real PhiB, PhiBSW, PhiBSWG; - - real Ldrn, Wdrn; - real tmp, tmp1, tmp2, tmp3, tmp4; - real dl, dlc, dw, dwc, leff, weff; - real leffCV, weffCV; - real Inv_L, Inv_W, Inv_LW; - - real cdsc, cdscb, cdscd, cit, nfactor, xj; - real vsat, at, a0, ags, a1, a2, keta, nsub; - real npeak; - real gamma1, lgamma1, wgamma1, pgamma1, gamma1Given; - real gamma2, lgamma2, wgamma2, pgamma2, gamma2Given; - real vbx, lvbx, wvbx, pvbx, vbxGiven; - real vfb, vfbGiven; - real k1, lk1, wk1, pk1, k1Given; - real k2, lk2, wk2, pk2, k2Given; - - real vbm, xt, kt1, kt1l, kt2, k3; - real k3b, w0, nlx, dvt0, dvt1, dvt2, dvt0w, dvt1w, dvt2w, drout; - real dsub, ua, ua1, ub, ub1, ute; - real voff, delta, rdsw, prwg, prwb, prt, eta0, etab, pclm; - real pscbe1, pscbe2, pvag, wr, dwg, dwb, b0, b1; - real alpha0, alpha1, beta0; - real elm, cgsl, cgdl, ckappa, clc, cle, vfbcv, acde, moin, noff_param, Noff2, voffcv_param; - - real abulkCVfactor, u0temp, vsattemp, rds0, tconst; - real phi, sqrtPhi, phis3, Xdep0, litl, vbi, cdep0, ldeb; - real nsubGiven, xtGiven, npeakGiven, vth0Given; - real vbsc, k1ox, k2ox, theta0vb0, thetaRout, vfbzb; - real sheetResistance; - - real sourceArea, drainArea; - real sourceSquares, drainSquares; - real sourcePerimeter, drainPerimeter; - real SourceSatCurrent, DrainSatCurrent; - real sourceConductance, drainConductance; - - real Nvtm, vjsm, vjdm, IsEvjsm, IsEvjdm; - - real vbs, vgs, vds; - real vbd, vgd, vgb; - - // diode equations variables - real gbs, cbs, evbs; - real gbd, cbd, evbd; - - real mode, Vds, Vgs, Vbs; - real Vbseff, Phis, sqrtPhis, Xdep, V0, lt1, ltw; - real Leff, Vtm, Theta0, thetavth, Delt_vth; - real temp, TempRatio, dDIBL_Sft_dVd, DIBL_Sft, Vth; - - real n, Vgs_eff, Vgst, VgstNVt, ExpArg; - real Vgsteff, ExpVgst; - real Weff, Rds, Abulk0, Abulk, Denomi, ueff; - real WVCox, WVCoxRds, Esat, EsatL, Lambda, Vgst2Vtm, Vdsat, vdsat; - real Vdseff, Vasat, diffVds, VACLM, VADIBL, Va, VASCBE; - real CoxWovL, beta, fgche1, fgche2, gche, Idl; - real Idsa, Ids, Isub, cdrain, csub; - - // Depletion capacitance related variables - real czbd, czbs; - real czbdswg, czbdsw; - real czbsswg, czbssw; - real mj, mjsw, mjswg; - real qbs, capbs; - real qbd, capbd; - real arg, sarg; - - - // Charge model related variables - real qgate, qdrn, qsrc, qbulk; - real Qgate, Qdrn, Qsrc, Qbulk; - - real Vfb, CoxWL, Arg1, qinv, Qac0, Vfbeff; - real One_Third_CoxWL, Two_Third_CoxWL, AbulkCV; - real VdsatCV, Alphaz, VbseffCV, Qsub0, qinoi, VdseffCV; - real Cox, V3, Tox, Tox2, LINK, V4, Coxeff, CoxWLcen, Tcen, Ccen; - real DeltaPhi; - - // extrinsic capacitance related variables - real cgso_param, cgdo_param, cgbo_param; - real qgso, qgdo; - real qgs, qgd, qgb; - - // noise data: added by M.E> Brinson for Qucs ADMS 2.30 port. - real fourkt, leffx2; - - // NQS model -`ifdef NQSMOD - real sxpart, dxpart; - real qcheq , qcdump, qdef, gtau_drift, gtau_diff, ScalingFactor, gtau; - real cqcheq, cqdef; -`endif - - real cqgate, cqdrn, cqbulk; - - analog - begin - - @(initial_step) - begin - tox = TOX; - - cox = 3.453133e-11 / tox; - TYPE = 1.0; // TYPE = 1.0 for nMOS device, MEB. - -`ifdef NQSMOD - ScalingFactor = 1.0e-9; -`endif - - if (NSUB == -99.0) - begin - nsub = 6.0e16; - nsubGiven = 0; - end - else - begin - nsub = NSUB; - nsubGiven = 1; - end - - if (XT == -99.0) - begin - xt = 1.55e-7; - xtGiven = 0; - end - else - begin - xt = XT; - xtGiven = 1; - end - - if (NCH == -99.0) - begin - npeak = 1.7e17; - npeakGiven = 0; - end - else - begin - npeak = NCH; - npeakGiven = 1; - end - - if (GAMMA1 == -99.0) - begin - gamma1 = 0.0; - gamma1Given = 0; - end - else - begin - gamma1 = GAMMA1; - gamma1Given = 1; - end - - if (LGAMMA1 == -99.0) - lgamma1 = 0.0; - else - lgamma1 = LGAMMA1; - - if (WGAMMA1 == -99.0) - wgamma1 = 0.0; - else - wgamma1 = WGAMMA1; - - if (PGAMMA1 == -99.0) - pgamma1 = 0.0; - else - pgamma1 = PGAMMA1; - - if (GAMMA2 == -99.0) - begin - gamma2 = 0.0; - gamma2Given = 0; - end - else - begin - gamma2 = GAMMA2; - gamma2Given = 1; - end - - if (LGAMMA2 == -99.0) - lgamma2 = 0.0; - else - lgamma2 = LGAMMA2; - - if (WGAMMA2 == -99.0) - wgamma2 = 0.0; - else - wgamma2 = WGAMMA2; - - if (PGAMMA2 == -99.0) - pgamma2 = 0.0; - else - pgamma2 = PGAMMA2; - - if (VBX == -99.0) - begin - vbx = 0.0; - vbxGiven = 0.0; - end - else - begin - vbx = VBX; - vbxGiven = 1; - end - - if (LVBX == -99.0) - lvbx = 0.0; - else - lvbx = LVBX; - - if (WVBX == -99.0) - wvbx = 0.0; - else - wvbx = WVBX; - - if (PVBX == -99.0) - pvbx = 0.0; - else - pvbx = PVBX; - - if (VFB == -99.0) - begin - vfb = 0.0; - vfbGiven = 0.0; - end - else - begin - vfb = VFB; - vfbGiven = 1.0; - end - - if (K1 == -99.0) - begin - k1 = 0.0; - k1Given = 0.0; - end - else - begin - k1 = K1; - k1Given = 1.0; - end - - if (LK1 == -99.0) - lk1 = 0.0; - else - lk1 = LK1; - - if (WK1 == -99.0) - wk1 = 0.0; - else - wk1 = WK1; - - if (PK1 == -99.0) - pk1 = 0.0; - else - pk1 = PK1; - - if (K2 == -99.0) - begin - k2 = 0.0; - k2Given = 0.0; - end - else - begin - k2 = K2; - k2Given = 1.0; - end - - if (LK2 == -99.0) - lk2 = 0.0; - else - lk2 = LK2; - - if (WK2 == -99.0) - wk2 = 0.0; - else - wk2 = WK2; - - if (PK2 == -99.0) // Changed to correct error, MEB. -// wk2 = 0.0; - pk2 = 0.0; - else -// wk2 = WK2; - pk2 = PK2; - - if (NCH > 1.0e20) - npeak = npeak * 1.0e-6; - else - npeak = npeak; - - if (NGATE > 1.0e23) - ngate = NGATE * 1.0e-6; - else - ngate = NGATE; - - // calculating ungiven parameters - if ( (VTHO == -99.0) && (VTH0 == -99.0) ) - begin - vth0 = (TYPE > 0.0) ? 0.7 : -0.7; - vth0Given = 0; - end - else - begin - vth0Given = 1; -// if (VTH0 == -99) // Error changed MEB. - if (VTH0 != -99) - vth0 = VTHO; -// if (VTHO == -99) // Error changed MEB. - if (VTHO != -99) - vth0 = VTH0; - end - - if (UC == -99.0 ) - uc = (MOBMOD == 3) ? -0.0465 : -0.0465e-9; - else - uc = UC; - - if (UC1 == -99.0) - uc1 = (MOBMOD == 3) ? -0.056 : -0.056e-9; - else - uc1 = UC1; - - if (U0 == -99.0) - u0 = (TYPE == 1) ? 0.067 : 0.025; - else - u0 = U0; - - if (TNOM == -99.0) - tnom = 300.15; - else - tnom = TNOM + 273.15; - - if (DLC == -99.0) - begin - dlcGiven = 0; - dlc = LINT; - end - else - begin - dlcGiven = 1; - dlc = DLC; - end - - if (CGSO == -99.0) - if ( dlcGiven && (dlc > 0.0) ) - cgso_param = dlc * cox - CGSL; - else - cgso_param = 0.6 * XJ * cox; - else - cgso_param = CGSO; - - if (CGDO == -99.0) - if ( dlcGiven && (dlc > 0.0) ) - cgdo_param = dlc * cox - CGDL; - else - cgdo_param = 0.6 * XJ * cox; - else - cgdo_param = CGDO; - - if (CGBO == -99.0) - cgbo_param = 2.0 * DWC * cox; - else - cgbo_param = CGBO; - - pdibl1 = PDIBLC1; - pdibl2 = PDIBLC2; - pdiblb = PDIBLCB; - - jctSatCurDensity = JS; - jctSidewallSatCurDensity = JSW; - bulkJctPotential = PB; - jctEmissionCoeff = NJ; - jctTempExponent = XTI; - bulkJctBotGradingCoeff = MJ; - sidewallJctPotential = PBSW; - bulkJctSideGradingCoeff = MJSW; - GatesidewallJctPotential = PBSWG; - bulkJctGateSideGradingCoeff = MJSWG; - unitAreaJctCap = CJ; - unitLengthSidewallJctCap = CJSW; - unitLengthGateSidewallJctCap = CJSWG; - - sheetResistance = RSH; - drainSquares = NRD; - sourceSquares = NRS; - drainArea = AD; - sourceArea = AS; - drainPerimeter = PD; - sourcePerimeter = PS; - - if (CF == -99.0) - cf = 2.0 * `EPSOX / `PI * ln(1.0 + 0.4e-6 / tox); - else - cf = CF; - - // Channel length dependance parameters - if (LNCH > 1.0e20) - lnpeak = LNCH * 1.0e-6; - else - lnpeak = LNCH; - - if (LNGATE > 1.0e23) - lngate = LNGATE * 1.0e-6; - else - lngate = LNGATE; - - if (LVTH0 != 0.0) - lvth0 = LVTH0; - if (LVTHO != 0.0) - lvth0 = LVTHO; - - lpdibl1 = LPDIBLC1; - lpdibl2 = LPDIBLC2; - lpdiblb = LPDIBLCB; - - // Channel width dependance parameters - if (WNCH > 1.0e20) - wnpeak = WNCH * 1.0e-6; - else - wnpeak = WNCH; - - if (WNGATE > 1.0e23) - wngate = WNGATE * 1.0e-6; - else - wngate = WNGATE; - - if (WVTH0 != 0.0) - wvth0 = WVTH0; - if (WVTHO != 0.0) - wvth0 = WVTHO; - - wpdibl1 = WPDIBLC1; - wpdibl2 = WPDIBLC2; - wpdiblb = WPDIBLCB; - - // Cross-term dependence parameters - if (PNCH > 1.0e20) - pnpeak = PNCH * 1.0e-6; - else - pnpeak = PNCH; - - if (PNGATE > 1.0e20) - pngate = PNGATE * 1.0e-6; - else - pngate = PNGATE; - - if (PVTH0 != 0.0) - pvth0 = PVTH0; - if (PVTHO != 0.0) - pvth0 = PVTHO; - - ppdibl1 = PPDIBLC1; - ppdibl2 = PPDIBLC2; - ppdiblb = PPDIBLCB; - - if (bulkJctPotential < 0.1) - begin - bulkJctPotential = 0.1; - $strobe ("Given pb is less than 0.1. Pb is set to 0.1."); - end - if (sidewallJctPotential < 0.1) - begin - sidewallJctPotential = 0.1; - $strobe ("Given pbsw is less than 0.1. Pbsw is set to 0.1."); - end - if (GatesidewallJctPotential < 0.1) - begin - GatesidewallJctPotential = 0.1; - $strobe ("Given pbswg is less than 0.1. Pbswg is set to 0.1."); - end - - Temp = $temperature; - Tnom = tnom; - TRatio = Temp / Tnom; - - factor1 = sqrt(`EPSSI / `EPSOX * tox); - - Vtm0 = `KboQ * Tnom; - Eg0 = 1.16 - 7.02e-4 * Tnom * Tnom / (Tnom + 1108.0); - ni = 1.45e10 * (Tnom / 300.15) * sqrt(Tnom / 300.15) * exp(21.5565981 - Eg0 / (2.0 * Vtm0)); - - vtm = `KboQ * Temp; - Eg = 1.16 - 7.02e-4 * Temp * Temp / (Temp + 1108.0); - - if (Temp != Tnom) - begin - T_0 = Eg0 / Vtm0 - Eg / vtm + jctTempExponent * ln(Temp / Tnom); - T1 = exp(T_0 / jctEmissionCoeff); - - jctTempSatCurDensity = jctSatCurDensity * T1; - jctSidewallTempSatCurDensity = jctSidewallSatCurDensity * T1; - end - else - begin - jctTempSatCurDensity = jctSatCurDensity; - jctSidewallTempSatCurDensity = jctSidewallSatCurDensity; - end - - if (jctTempSatCurDensity < 0.0) - jctTempSatCurDensity = 0.0; - if (jctSidewallTempSatCurDensity < 0.0) - jctSidewallTempSatCurDensity = 0.0; - - /* Temperature dependence of D/B and S/B diode capacitance */ - delTemp = $temperature - tnom; - T_0 = TCJ * delTemp; - - if (T_0 >= -1.0) - begin - if (VERSION == 3.24) - unitAreaTempJctCap = unitAreaJctCap * (1.0 + T_0); - else - unitAreaJctCap = unitAreaJctCap * (1.0 + T_0); - end - else if (unitAreaJctCap > 0.0) - begin - if (VERSION == 3.24) - unitAreaTempJctCap = 0.0; - else - unitAreaJctCap = 0.0; - $strobe ("Temperature effect has caused cj to be negative. Cj is clamped to zero."); - end - - T_0 = TCJSW * delTemp; - if (T_0 >= -1.0) - begin - if (VERSION == 3.24) - unitLengthSidewallTempJctCap = unitLengthSidewallJctCap * (1.0 + T_0); - else - unitLengthSidewallJctCap = unitLengthSidewallJctCap * (1.0 + T_0); - end - else if (unitLengthSidewallJctCap > 0.0) - begin - if (VERSION == 3.24) - unitLengthSidewallTempJctCap = 0.0; - else - unitLengthSidewallJctCap = 0.0; - $strobe ("Temperature effect has caused cjsw to be negative. Cjsw is clamped to zero."); - end - - T_0 = TCJSWG * delTemp; - if (T_0 >= -1.0) - begin - if (VERSION == 3.24) - unitLengthGateSidewallTempJctCap = unitLengthGateSidewallJctCap * (1.0 + T_0); - else - unitLengthGateSidewallJctCap = unitLengthGateSidewallJctCap * (1.0 + T_0); - end - else if (unitLengthGateSidewallJctCap > 0.0) - begin - if (VERSION == 3.24) - unitLengthGateSidewallTempJctCap = 0.0; - else - unitLengthGateSidewallJctCap = 0.0; - $strobe ("Temperature effect has caused cjswg to be negative. Cjswg is clamped to zero."); - end - - PhiB = bulkJctPotential - TPB * delTemp; - if (PhiB < 0.01) - begin - PhiB = 0.01; - $strobe ("Temperature effect has caused pb to be less than 0.01. Pb is clamped to 0.01."); - end - - PhiBSW = sidewallJctPotential - TPBSW * delTemp; - if (PhiBSW <= 0.01) - begin - PhiBSW = 0.01; - $strobe ("Temperature effect has caused pbsw to be less than 0.01. Pbsw is clamped to 0.01."); - end - - PhiBSWG = GatesidewallJctPotential - TPBSWG * delTemp; - if (PhiBSWG <= 0.01) - begin - PhiBSWG = 0.01; - $strobe ("Temperature effect has caused pbswg to be less than 0.01. Pbswg is clamped to 0.01."); - end - - /* End of junction capacitance */ - - /*** Effective channel length and width calculation ***/ - Ldrn = L; - Wdrn = W; - - T_0 = pow(Ldrn, LLN); - T1 = pow(Wdrn, LWN); - - tmp1 = LL / T_0 + LW / T1 + LWL / (T_0 * T1); - dl = LINT + tmp1; - - tmp2 = LLC / T_0 + LWC / T1 + LWLC / (T_0 * T1); - dlc = dlc + tmp2; - - T2 = pow(Ldrn, WLN); - T3 = pow(Wdrn, WWN); - - tmp1 = WL / T2 + WW / T3 + WWL / (T2 * T3); - dw = WINT + tmp1; - tmp2 = WLC / T2 + WWC / T3 + WWLC / (T2 * T3); - dwc = DWC + tmp2; - - leff = L - 2.0 * dl; - - if (leff <= 0.0) - begin - $strobe ("BSIM3: device %m: Effective channel length <= 0"); - $finish(1); - end - - weff = W - 2.0 * dw; - if (leff <= 0.0) - begin - $strobe ("BSIM3: device %m: Effective channel width <= 0"); - $finish(1); - end - - leffCV = L - 2.0 * dlc; - if (leffCV <= 0.0) - begin - $strobe ("BSIM3: device %m: Effective channel length for C-V <= 0"); - $finish(1); - end - - weffCV = W - 2.0 * dwc; - if (weffCV <= 0.0) - begin - $strobe ("BSIM3: device %m: Effective channel width for C-V <= 0"); - $finish(1); - end - - if (BINUNIT == 1) - begin - Inv_L = 1.0e-6 / leff; - Inv_W = 1.0e-6 / weff; - Inv_LW = 1.0e-12 / (leff * weff); - end - else - begin - Inv_L = 1.0 / leff; - Inv_W = 1.0 / weff; - Inv_LW = 1.0 / (leff * weff); - end - - cdsc = CDSC + LCDSC * Inv_L + WCDSC * Inv_W + PCDSC * Inv_LW; - cdscb = CDSCB + LCDSCB * Inv_L + WCDSCB * Inv_W + PCDSCB * Inv_LW; - cdscd = CDSCD + LCDSCD * Inv_L + WCDSCD * Inv_W + PCDSCD * Inv_LW; - - cit = CIT + LCIT * Inv_L + WCIT * Inv_W + PCIT * Inv_LW; - nfactor = NFACTOR + LNFACTOR * Inv_L + WNFACTOR * Inv_W + PNFACTOR * Inv_LW; - - xj = XJ + LXJ * Inv_L + WXJ * Inv_W + PXJ * Inv_LW; - vsat = VSAT + LVSAT * Inv_L + WVSAT * Inv_W + PVSAT * Inv_LW; - - at = AT + LAT * Inv_L + WAT * Inv_W + PAT * Inv_LW; - a0 = A0 + LA0 * Inv_L + WA0 * Inv_W + PA0 * Inv_LW; - - ags = AGS + LAGS * Inv_L + WAGS * Inv_W + PAGS * Inv_LW; - a1 = A1 + LA1 * Inv_L + WA1 * Inv_W + PA1 * Inv_LW; - a2 = A2 + LA2 * Inv_L + WA2 * Inv_W + PA2 * Inv_LW; - keta = KETA + LKETA * Inv_L + WKETA * Inv_W + PKETA * Inv_LW; - nsub = nsub + LNSUB * Inv_L + WNSUB * Inv_W + PNSUB * Inv_LW; - - npeak = npeak + lnpeak * Inv_L + wnpeak * Inv_W + pnpeak * Inv_LW; - ngate = ngate + lngate * Inv_L + wngate * Inv_W + pngate * Inv_LW; - - gamma1 = gamma1 + lgamma1 * Inv_L + wgamma1 * Inv_W + pgamma1 * Inv_LW; - gamma2 = gamma2 + lgamma2 * Inv_L + wgamma2 * Inv_W + pgamma2 * Inv_LW; - - vbx = vbx + lvbx * Inv_L + wvbx * Inv_W + pvbx * Inv_LW; - vbm = VBM + LVBM * Inv_L + WVBM * Inv_W + PVBM * Inv_LW; - xt = xt + LXT * Inv_L + WXT * Inv_W + PXT * Inv_LW; - vfb = vfb + LVFB * Inv_L + WVFB * Inv_W + PVFB * Inv_LW; - - k1 = k1 + lk1 * Inv_L + wk1 * Inv_W + pk1 * Inv_LW; - kt1 = KT1 + LKT1 * Inv_L + WKT1 * Inv_W + PKT1 * Inv_LW; - kt1l = KT1L + LKT1L * Inv_L + WKT1L * Inv_W + PKT1L * Inv_LW; - k2 = k2 + lk2 * Inv_L + wk2 * Inv_W + pk2 * Inv_LW; - kt2 = KT2 + LKT2 * Inv_L + WKT2 * Inv_W + PKT2 * Inv_LW; - k3 = K3 + LK3 * Inv_L + WK3 * Inv_W + PK3 * Inv_LW; - k3b = K3B + LK3B * Inv_L + WK3B * Inv_W + PK3B * Inv_LW; - - w0 = W0 + LW0 * Inv_L + WW0 * Inv_W + PW0 * Inv_LW; - nlx = NLX + LNLX * Inv_L + WNLX * Inv_W + PNLX * Inv_LW; - - dvt0 = DVT0 + LDVT0 * Inv_L + WDVT0 * Inv_W + PDVT0 * Inv_LW; - dvt1 = DVT1 + LDVT1 * Inv_L + WDVT1 * Inv_W + PDVT1 * Inv_LW; - dvt2 = DVT2 + LDVT2 * Inv_L + WDVT2 * Inv_W + PDVT2 * Inv_LW; - - dvt0w = DVT0W + LDVT0W * Inv_L + WDVT0W * Inv_W + PDVT0W * Inv_LW; - dvt1w = DVT1W + LDVT1W * Inv_L + WDVT1W * Inv_W + PDVT1W * Inv_LW; - dvt2w = DVT2W + LDVT2W * Inv_L + WDVT2W * Inv_W + PDVT2W * Inv_LW; - drout = DROUT + LDROUT * Inv_L + WDROUT * Inv_W + PDROUT * Inv_LW; - - dsub = DSUB + LDSUB * Inv_L + WDSUB * Inv_W + PDSUB * Inv_LW; - vth0 = vth0 + lvth0 * Inv_L + wvth0 * Inv_W + pvth0 * Inv_LW; - - ua = UA + LUA * Inv_L + WUA * Inv_W + PUA * Inv_LW; - ua1 = UA1 + LUA1 * Inv_L + WUA1 * Inv_W + PUA1 * Inv_LW; - ub = UB + LUB * Inv_L + WUB * Inv_W + PUB * Inv_LW; - ub1 = UB1 + LUB1 * Inv_L + WUB1 * Inv_W + PUB1 * Inv_LW; - uc = uc + LUC * Inv_L + WUC * Inv_W + PUC * Inv_LW; - uc1 = uc1 + LUC1 * Inv_L + WUC1 * Inv_W + PUC1 * Inv_LW; - u0 = u0 + LU0 * Inv_L + WU0 * Inv_W + PU0 * Inv_LW; - ute = UTE + LUTE * Inv_L + WUTE * Inv_W + PUTE * Inv_LW; - - voff = VOFF + LVOFF * Inv_L + WVOFF * Inv_W + PVOFF * Inv_LW; - delta = DELTA + LDELTA * Inv_L + WDELTA * Inv_W + PDELTA * Inv_LW; - - rdsw = RDSW + LRDSW * Inv_L + WRDSW * Inv_W + PRDSW * Inv_LW; - prwg = PRWG + LPRWG * Inv_L + WPRWG * Inv_W + PPRWG * Inv_LW; - prwb = PRWB + LPRWB * Inv_L + WPRWB * Inv_W + PPRWB * Inv_LW; - prt = PRT + LPRT * Inv_L + WPRT * Inv_W + PPRT * Inv_LW; - eta0 = ETA0 + LETA0 * Inv_L + WETA0 * Inv_W + PETA0 * Inv_LW; - etab = ETAB + LETAB * Inv_L + WETAB * Inv_W + PETAB * Inv_LW; - pclm = PCLM + LPCLM * Inv_L + WPCLM * Inv_W + PPCLM * Inv_LW; - - pdibl1 = pdibl1 + lpdibl1 * Inv_L + wpdibl1 * Inv_W + ppdibl1 * Inv_LW; - pdibl2 = pdibl2 + lpdibl2 * Inv_L + wpdibl2 * Inv_W + ppdibl2 * Inv_LW; - pdiblb = pdiblb + lpdiblb * Inv_L + wpdiblb * Inv_W + ppdiblb * Inv_LW; - pscbe1 = PSCBE1 + LPSCBE1 * Inv_L + WPSCBE1 * Inv_W + PPSCBE1 * Inv_LW; - pscbe2 = PSCBE2 + LPSCBE2 * Inv_L + WPSCBE2 * Inv_W + PPSCBE2 * Inv_LW; - pvag = PVAG + LPVAG * Inv_L + WPVAG * Inv_W + PPVAG * Inv_LW; - - wr = WR + LWR * Inv_L + WWR * Inv_W + PWR * Inv_LW; - dwg = DWG + LDWG * Inv_L + WDWG * Inv_W + PDWG * Inv_LW; - dwb = DWB + LDWB * Inv_L + WDWB * Inv_W + PDWB * Inv_LW; - b0 = B0 + LB0 * Inv_L + WB0 * Inv_W + PB0 * Inv_LW; - b1 = B1 + LB1 * Inv_L + WB1 * Inv_W + PB1 * Inv_LW; - - alpha0 = ALPHA0 + LALPHA0 * Inv_L + WALPHA0 * Inv_W + PALPHA0 * Inv_LW; - alpha1 = ALPHA1 + LALPHA1 * Inv_L + WALPHA1 * Inv_W + PALPHA1 * Inv_LW; - beta0 = BETA0 + LBETA0 * Inv_L + WBETA0 * Inv_W + PBETA0 * Inv_LW; - - /* CV model */ - elm = ELM + LELM * Inv_L + WELM * Inv_W + PELM * Inv_LW; - cgsl = CGSL + LCGSL * Inv_L + WCGSL * Inv_W + PCGSL * Inv_LW; - cgdl = CGDL + LCGDL * Inv_L + WCGDL * Inv_W + PCGDL * Inv_LW; - - ckappa = CKAPPA + LCKAPPA * Inv_L + WCKAPPA * Inv_W + PCKAPPA * Inv_LW; - - cf = cf + LCF * Inv_L + WCF * Inv_W + PCF * Inv_LW; - clc = CLC + LCLC * Inv_L + WCLC * Inv_W + PCLC * Inv_LW; - cle = CLE + LCLE * Inv_L + WCLE * Inv_W + PCLE * Inv_LW; - - vfbcv = VFBCV + LVFBCV * Inv_L + WVFBCV * Inv_W + PVFBCV * Inv_LW; - acde = ACDE + LACDE * Inv_L + WACDE * Inv_W + PACDE * Inv_LW; - moin = MOIN + LMOIN * Inv_L + WMOIN * Inv_W + PMOIN * Inv_LW; - noff_param = NOFF + LNOFF * Inv_L + WNOFF * Inv_W + PNOFF * Inv_LW; - voffcv_param = VOFFCV + LVOFFCV * Inv_L + WVOFFCV * Inv_W + PVOFFCV * Inv_LW; - - abulkCVfactor = 1.0 + pow((clc / leffCV), cle); - - T_0 = (TRatio - 1.0); - - ua = ua + ua1 * T_0; - ub = ub + ub1 * T_0; - uc = uc + uc1 * T_0; - - if (u0 > 1.0) - u0 = u0 / 1.0e4; - - u0temp = u0 * pow(TRatio, ute); - vsattemp = vsat - at * T_0; - rds0 = (rdsw + prt * T_0) / pow(weff * 1E6, wr); - - // *** check model and instance parameters *** - Fatal_Flag = 0; - - if (nlx < -leff) - begin - $strobe ("Fatal: Nlx = %g is less than -Leff.", nlx); - Fatal_Flag = 1; - end - - if (tox <= 0.0) - begin - $strobe ("Fatal: Tox = %g is not positive.", tox); - Fatal_Flag = 1; - end - - if (TOXM <= 0.0) - begin - $strobe ("Fatal: Toxm = %g is not positive.", TOXM); - Fatal_Flag = 1; - end - - if (npeak <= 0.0) - begin - $strobe ("Fatal: Nch = %g is not positive.", npeak); - Fatal_Flag = 1; - end - if (nsub <= 0.0) - begin - $strobe ("Fatal: Nsub = %g is not positive.", nsub); - Fatal_Flag = 1; - end - if (ngate < 0.0) - begin - $strobe ("Fatal: Ngate = %g Ngate is not positive.", ngate); - Fatal_Flag = 1; - end - if (ngate > 1.0e25) - begin - $strobe ("Fatal: Ngate = %g Ngate is too high", ngate); - Fatal_Flag = 1; - end - if (xj <= 0.0) - begin - $strobe ("Fatal: Xj = %g is not positive.", xj); - Fatal_Flag = 1; - end - - if (dvt1 < 0.0) - begin - $strobe ("Fatal: Dvt1 = %g is negative.", dvt1); - Fatal_Flag = 1; - end - - if (dvt1w < 0.0) - begin - $strobe ("Fatal: Dvt1w = %g is negative.", dvt1w); - Fatal_Flag = 1; - end - - if (w0 == -weff) - begin - $strobe ("Fatal: (W0 + Weff) = 0 causing divided-by-zero."); - Fatal_Flag = 1; - end - - if (dsub < 0.0) - begin - $strobe ("Fatal: Dsub = %g is negative.", dsub); - Fatal_Flag = 1; - end - if (b1 == -weff) - begin - $strobe ("Fatal: (B1 + Weff) = 0 causing divided-by-zero."); - Fatal_Flag = 1; - end - if (u0temp <= 0.0) - begin - $strobe ("Fatal: u0 at current temperature = %g is not positive.", u0temp); - Fatal_Flag = 1; - end - - /* Check delta parameter */ - if (delta < 0.0) - begin - $strobe ("Fatal: Delta = %g is less than zero.", delta); - Fatal_Flag = 1; - end - - if (vsattemp <= 0.0) - begin - $strobe ("Fatal: Vsat at current temperature = %g is not positive.", vsattemp); - Fatal_Flag = 1; - end - /* Check Rout parameters */ - if (pclm <= 0.0) - begin - $strobe ("Fatal: Pclm = %g is not positive.", pclm); - Fatal_Flag = 1; - end - - if (drout < 0.0) - begin - $strobe ("Fatal: Drout = %g is negative.", drout); - Fatal_Flag = 1; - end - - if (pscbe2 <= 0.0) - begin - $strobe ("Warning: Pscbe2 = %g is not positive.", pscbe2); - end - - if (unitLengthSidewallJctCap > 0.0 || unitLengthGateSidewallJctCap > 0.0) - begin - if (drainPerimeter < weff) - begin - $strobe ("Warning: Pd = %g is less than W.", drainPerimeter); - end - if (sourcePerimeter < weff) - begin - $strobe ("Warning: Ps = %g is less than W.", sourcePerimeter); - end - end - - if (noff_param < 0.1) - $strobe ("Warning: Noff = %g is too small.", noff_param); - if (noff_param > 4.0) - $strobe ("Warning: Noff = %g is too large.", noff_param); - if (voffcv_param < -0.5) - $strobe ("Warning: Voffcv = %g is too small.", voffcv_param); - if (voffcv_param > 0.5) - $strobe ("Warning: Voffcv = %g is too large.", voffcv_param); - - if (IJTH < 0.0) - begin - $strobe ("Fatal: Ijth = %g cannot be negative.", IJTH); - Fatal_Flag = 1; - end - - /* Check capacitance parameters */ - if (clc < 0.0) - begin - $strobe ("Fatal: Clc = %g is negative.", clc); - Fatal_Flag = 1; - end - - if (moin < 5.0) - $strobe ("Warning: Moin = %g is too small.", moin); - if (moin > 25.0) - $strobe ("Warning: Moin = %g is too large.", moin); - if (((acde < 0.4) && !(VERSION == 3.24)) || - ((acde < 0.4) && (VERSION == 3.24) && (CAPMOD == 3.0))) - $strobe ("Warning: Acde = %g is too small.", acde); - if (((acde > 1.6) && !(VERSION == 3.24)) || - ((acde > 1.6) && (VERSION == 3.24) && (CAPMOD == 3.0))) - $strobe ("Warning: Acde = %g is too large.", acde); - // *** end of parameters checking *** - - if (PARAMCHK ==1) - begin - /* Check L and W parameters */ - if (leff <= 5.0e-8) - $strobe ("Warning: Leff = %g may be too small.", leff); - if (leffCV <= 5.0e-8) - $strobe ("Warning: Leff for CV = %g may be too small.", leffCV); - if (weff <= 1.0e-7) - $strobe ("Warning: Weff = %g may be too small.", weff); - if (weffCV <= 1.0e-7) - $strobe ("Warning: Weff for CV = %g may be too small.", weffCV); - - /* Check threshold voltage parameters */ - if (nlx < 0.0) - $strobe ("Warning: Nlx = %g is negative.", nlx); - if (tox < 1.0e-9) - $strobe ("Warning: Tox = %g is less than 10A.", tox); - - if (npeak <= 1.0e15) - $strobe ("Warning: Nch = %g may be too small.", npeak); - else if (npeak >= 1.0e21) - $strobe ("Warning: Nch = %g may be too large.", npeak); - - if (nsub <= 1.0e14) - $strobe ("Warning: Nsub = %g may be too small.", nsub); - else if (nsub >= 1.0e21) - $strobe ("Warning: Nsub = %g may be too large.", nsub); - - if ((ngate > 0.0) && (ngate <= 1.0e18)) - $strobe ("Warning: Ngate = %g is less than 1.E18cm^-3.", ngate); - - if (dvt0 < 0.0) - $strobe ("Warning: Dvt0 = %g is negative.", dvt0); - if (abs(1.0e-6 / (w0 + weff)) > 10.0) - $strobe ("Warning: (W0 + Weff) may be too small."); - - /* Check subthreshold parameters */ - if (nfactor < 0.0) - $strobe ("Warning: Nfactor = %g is negative.", nfactor); - if (cdsc < 0.0) - $strobe ("Warning: Cdsc = %g is negative.", cdsc); - if (cdscd < 0.0) - $strobe ("Warning: Cdscd = %g is negative.", cdscd); - /* Check DIBL parameters */ - if (eta0 < 0.0) - $strobe ("Warning: Eta0 = %g is negative.", eta0); - /* Check Abulk parameters */ - if (abs(1.0e-6 / (b1 + weff)) > 10.0) - $strobe ("Warning: (B1 + Weff) may be too small."); - - /* Check Saturation parameters */ - if (a2 < 0.01) - begin - $strobe ("Warning: A2 = %g is too small. Set to 0.01.", a2); - a2 = 0.01; - end - else if (a2 > 1.0) - begin - $strobe ("Warning: A2 = %g is larger than 1. A2 is set to 1 and A1 is set to 0.", a2); - a2 = 1.0; - a1 = 0.0; - end - - if (rdsw < 0.0) - begin - $strobe ("Warning: Rdsw = %g is negative. Set to zero.", rdsw); - rdsw = 0.0; - rds0 = 0.0; - end - else if ((rds0 > 0.0) && (rds0 < 0.001)) - begin - $strobe ("Warning: Rds at current temperature = %g is less than 0.001 ohm. Set to zero.", rds0); - rds0 = 0.0; - end - if (vsattemp < 1.0e3) - $strobe ("Warning: Vsat at current temperature = %g may be too small.", vsattemp); - if (pdibl1 < 0.0) - $strobe ("Warning: Pdibl1 = %g is negative.", pdibl1); - if (pdibl2 < 0.0) - $strobe ("Warning: Pdibl2 = %g is negative.", pdibl2); - - /* Check overlap capacitance parameters */ - if (cgdo_param < 0.0) - begin - $strobe ("Warning: cgdo = %g is negative. Set to zero.", cgdo_param); - cgdo_param = 0.0; - end - if (cgso_param < 0.0) - begin - $strobe ("Warning: cgso = %g is negative. Set to zero.", cgso_param); - cgso_param = 0.0; - end - if (cgbo_param < 0.0) - begin - $strobe ("Warning: cgbo = %g is negative. Set to zero.", cgbo_param); - cgbo_param = 0.0; - end - - end/* loop for the parameter check for warning messages */ - - if (Fatal_Flag) - $finish(1); - - cgdo_param = (cgdo_param + cf) * weffCV; - cgso_param = (cgso_param + cf) * weffCV; - cgbo_param = cgbo_param * leffCV; - - T_0 = leffCV * leffCV; - tconst = u0temp * elm / (cox * weffCV * leffCV * T_0); - - if ( !npeakGiven && gamma1Given ) - begin - T_0 = gamma1 * cox; - npeak = 3.021E22 * T_0 * T_0; - end - - phi = 2.0 * Vtm0 * ln(npeak / ni); - sqrtPhi = sqrt(phi); - phis3 = sqrtPhi * phi; - - Xdep0 = sqrt(2.0 * `EPSSI / (`Charge_q * npeak * 1.0e6)) * sqrtPhi; - - litl = sqrt(3.0 * xj * tox); - vbi = Vtm0 * ln(1.0e20 * npeak / (ni * ni)); - - cdep0 = sqrt(`Charge_q * `EPSSI * npeak * 1.0e6 / 2.0 / phi); - - ldeb = sqrt(`EPSSI * Vtm0 / (`Charge_q * npeak * 1.0e6)) / 3.0; - acde = acde * pow((npeak / 2.0e16), -0.25); - - if ( k1Given || k2Given ) - begin - if (!k1Given) - begin - $strobe ("Warning: k1 should be specified with k2."); - k1 = 0.53; - end - if (!k2Given) - begin - $strobe ("Warning: k2 should be specified with k1."); - k2 = -0.0186; - end - - if (nsubGiven) - $strobe ("Warning: nsub is ignored because k1 or k2 is given."); - if (xtGiven) - $strobe ("Warning: xt is ignored because k1 or k2 is given."); - if (vbxGiven) - $strobe ("Warning: vbx is ignored because k1 or k2 is given."); - if (gamma1Given) - $strobe ("Warning: gamma1 is ignored because k1 or k2 is given."); - if (gamma2Given) - $strobe ("Warning: gamma2 is ignored because k1 or k2 is given."); - end - else - begin - if (!vbxGiven) - vbx = phi - 7.7348e-4 * npeak * xt * xt; - if (vbx > 0.0) - vbx = -vbx; - if (vbm > 0.0) - vbm = -vbm; - - if (!gamma1Given) - gamma1 = 5.753e-12 * sqrt(npeak) / cox; - if (!gamma2Given) - gamma2 = 5.753e-12 * sqrt(nsub) / cox; - - T_0 = gamma1 - gamma2; - T1 = sqrt(phi - vbx) - sqrtPhi; - T2 = sqrt(phi * (phi - vbm)) - phi; - - k2 = T_0 * T1 / (2.0 * T2 + vbm); - k1 = gamma2 - 2.0 * k2 * sqrt(phi - vbm); - - end - - if (k2 < 0.0) - begin - T_0 = 0.5 * k1 / k2; - vbsc = 0.9 * (phi - T_0 * T_0); - - if (vbsc > -3.0) - vbsc = -3.0; - else if (vbsc < -30.0) - vbsc = -30.0; - end - else - vbsc = -30.0; - - if (vbsc > vbm) - vbsc = vbm; - - if (!vfbGiven) - begin - if (vth0Given) - vfb = TYPE * vth0 - phi - k1 * sqrtPhi; - else - vfb = -1.0; - end - - if (!vth0Given) - vth0 = TYPE * (vfb + phi + k1 * sqrtPhi); - - k1ox = k1 * tox / TOXM; - k2ox = k2 * tox / TOXM; - - T1 = sqrt(`EPSSI / `EPSOX * tox * Xdep0); - T_0 = exp(-0.5 * dsub * leff / T1); - - theta0vb0 = (T_0 + 2.0 * T_0 * T_0); - - T_0 = exp(-0.5 * drout * leff / T1); - T2 = (T_0 + 2.0 * T_0 * T_0); - - thetaRout = pdibl1 * T2 + pdibl2; - - /* vfbzb for capMod 1, 2 & 3 */ - tmp = sqrt(Xdep0); - tmp1 = vbi - phi; - tmp2 = factor1 * tmp; - - T_0 = -0.5 * dvt1w * weff * leff / tmp2; - - if (T_0 > -`EXP_THRESHOLD) - begin - T1 = exp(T_0); - T2 = T1 * (1.0 + 2.0 * T1); - end - else - begin - T1 = `MIN_EXP; - T2 = T1 * (1.0 + 2.0 * T1); - end - - T_0 = dvt0w * T2; - T2 = T_0 * tmp1; - - T_0 = -0.5 * dvt1 * leff / tmp2; - - if (T_0 > -`EXP_THRESHOLD) - begin - T1 = exp(T_0); - T3 = T1 * (1.0 + 2.0 * T1); - end - else - begin - T1 = `MIN_EXP; - T3 = T1 * (1.0 + 2.0 * T1); - end - - T3 = dvt0 * T3 * tmp1; - - T4 = tox * phi / (weff + w0); - - T_0 = sqrt(1.0 + nlx / leff); - T5 = k1ox * (T_0 - 1.0) * sqrtPhi + (kt1 + kt1l / leff) * (TRatio - 1.0); - - tmp3 = TYPE * vth0 - T2 - T3 + k3 * T4 + T5; - vfbzb = tmp3 - phi - k1 * sqrtPhi; - - // End of vfbzb calculation - - // process source/drain series resistance - drainConductance = sheetResistance * drainSquares; - - if (drainConductance > 0.0) - drainConductance = 1.0 / drainConductance; - else - drainConductance = 0.0; - - sourceConductance = sheetResistance * sourceSquares; - - if (sourceConductance > 0.0) - sourceConductance = 1.0 / sourceConductance; - else - sourceConductance = 0.0; - - Nvtm = vtm * jctEmissionCoeff; - - if ((sourceArea <= 0.0) && (sourcePerimeter <= 0.0)) - SourceSatCurrent = 1.0e-14; - else - SourceSatCurrent = sourceArea * jctTempSatCurDensity - + sourcePerimeter * jctSidewallTempSatCurDensity; - - if ((SourceSatCurrent > 0.0) && (IJTH > 0.0)) - begin - vjsm = Nvtm * ln(IJTH / SourceSatCurrent + 1.0); - - if (VERSION == 3.24) - IsEvjsm = SourceSatCurrent * exp(vjsm / Nvtm); - end - - if ((drainArea <= 0.0) && (drainPerimeter <= 0.0)) - DrainSatCurrent = 1.0e-14; - else - DrainSatCurrent = drainArea * jctTempSatCurDensity - + drainPerimeter * jctSidewallTempSatCurDensity; - - if ((DrainSatCurrent > 0.0) && (IJTH > 0.0)) - begin - vjdm = Nvtm * ln(IJTH / DrainSatCurrent + 1.0); - - if (VERSION == 3.24) - IsEvjdm = DrainSatCurrent * exp(vjdm / Nvtm); - end - - end - - //*********************************// - //****** End of initial_step ******// - //*********************************// - - vbs = TYPE * V(bulk, sourcep); - vgs = TYPE * V(gate, sourcep); - vds = TYPE * V(drainp, sourcep); -`ifdef NQSMOD - qdef = TYPE * V(q); -`endif - - vbd = vbs - vds; - vgd = vgs - vds; - vgb = vgs - vbs; - - temp = $temperature; - - // Source/drain junction diode DC model begins - if (SourceSatCurrent <= 0.0) - begin - gbs = GMIN; - cbs = gbs * vbs; - end - else - begin - if (IJTH == 0.0) - begin - evbs = exp(vbs / Nvtm); - gbs = SourceSatCurrent * evbs / Nvtm + GMIN; - cbs = SourceSatCurrent * (evbs - 1.0) + GMIN * vbs; - end - else - begin - if (vbs < vjsm) - begin - evbs = exp(vbs / Nvtm); - gbs = SourceSatCurrent * evbs / Nvtm + GMIN; - cbs = SourceSatCurrent * (evbs - 1.0) + GMIN * vbs; - end - else - begin - if (VERSION == 3.24) - begin - T_0 = IsEvjsm / Nvtm; - cbs = IsEvjsm - SourceSatCurrent - + GMIN * vbs + T_0 * (vbs - vjsm); - end - else - begin - T_0 = (SourceSatCurrent + IJTH) / Nvtm; - cbs = IJTH + GMIN * vbs + T_0 * (vbs - vjsm); - end - - gbs = T_0 + GMIN; - end - end - end - - if (DrainSatCurrent <= 0.0) - begin - gbd = GMIN; - cbd = gbd * vbd; - end - else - begin - if (IJTH == 0.0) - begin - evbd = exp(vbd / Nvtm); - gbd = DrainSatCurrent * evbd / Nvtm + GMIN; - cbd = DrainSatCurrent * (evbd - 1.0) + GMIN * vbd; - end - else - begin - if (vbd < vjdm) - begin - evbd = exp(vbd / Nvtm); - gbd = DrainSatCurrent * evbd / Nvtm + GMIN; - cbd = DrainSatCurrent * (evbd - 1.0) + GMIN * vbd; - end - else - begin - if (VERSION == 3.24) - begin - T_0 = IsEvjdm / Nvtm; - cbd = IsEvjdm - DrainSatCurrent - + GMIN * vbd + T_0 * (vbd - vjdm); - end - else - begin - T_0 = (DrainSatCurrent + IJTH) / Nvtm; - cbd = IJTH + GMIN * vbd + T_0 * (vbd - vjdm); - end - gbd = T_0 + GMIN; - - end - end - end - // End of diode DC model - - if (vds >= 0.0) - begin /* normal mode */ - mode = 1; - Vds = vds; - Vgs = vgs; - Vbs = vbs; - end - else - begin /* inverse mode */ - mode = -1; - Vds = -vds; - Vgs = vgd; - Vbs = vbd; - end - - T_0 = Vbs - vbsc - 0.001; - T1 = sqrt(T_0 * T_0 - 0.004 * vbsc); - Vbseff = vbsc + 0.5 * (T_0 + T1); - - // Added to avoid the possible numerical problems due to computer accuracy. - // (See comments for diffVds) - if (Vbseff < Vbs) - Vbseff = Vbs; - - if (Vbseff > 0.0) - begin - T_0 = phi / (phi + Vbseff); - Phis = phi * T_0; - sqrtPhis = phis3 / (phi + 0.5 * Vbseff); - end - else - begin - Phis = phi - Vbseff; - sqrtPhis = sqrt(Phis); - end - - Xdep = Xdep0 * sqrtPhis / sqrtPhi; - - Leff = leff; - Vtm = vtm; - - /*** Vth Calculation ***/ - T3 = sqrt(Xdep); - V0 = vbi - phi; - - T_0 = dvt2 * Vbseff; - - if (T_0 >= - 0.5) - begin - T1 = 1.0 + T_0; - T2 = dvt2; - end - else /* Added to avoid any discontinuity problems caused by dvt2 */ - begin - T4 = 1.0 / (3.0 + 8.0 * T_0); - T1 = (1.0 + 3.0 * T_0) * T4; - T2 = dvt2 * T4 * T4; - end - - lt1 = factor1 * T3 * T1; - - T_0 = dvt2w * Vbseff; - - if (T_0 >= - 0.5) - begin - T1 = 1.0 + T_0; - T2 = dvt2w; - end - else /* Added to avoid any discontinuity problems caused by dvt2w */ - begin - T4 = 1.0 / (3.0 + 8.0 * T_0); - T1 = (1.0 + 3.0 * T_0) * T4; - T2 = dvt2w * T4 * T4; - end - - ltw = factor1 * T3 * T1; - - T_0 = -0.5 * dvt1 * Leff / lt1; - - if (T_0 > -`EXP_THRESHOLD) - begin - T1 = exp(T_0); - Theta0 = T1 * (1.0 + 2.0 * T1); - end - else - begin - T1 = `MIN_EXP; - Theta0 = T1 * (1.0 + 2.0 * T1); - end - - thetavth = dvt0 * Theta0; - Delt_vth = thetavth * V0; - - T_0 = -0.5 * dvt1w * weff * Leff / ltw; - - if (T_0 > -`EXP_THRESHOLD) - begin - T1 = exp(T_0); - T2 = T1 * (1.0 + 2.0 * T1); - end - else - begin - T1 = `MIN_EXP; - T2 = T1 * (1.0 + 2.0 * T1); - end - - T_0 = dvt0w * T2; - T2 = T_0 * V0; - - TempRatio = temp / tnom - 1.0; - T_0 = sqrt(1.0 + nlx / Leff); - T1 = k1ox * (T_0 - 1.0) * sqrtPhi - + (kt1 + kt1l / Leff + kt2 * Vbseff) * TempRatio; - - tmp2 = tox *phi / (weff + w0); - - T3 = eta0 + etab * Vbseff; - if (T3 < 1.0e-4) /* avoid discontinuity problems caused by etab */ - begin - T9 = 1.0 / (3.0 - 2.0e4 * T3); - T3 = (2.0e-4 - T3) * T9; - T4 = T9 * T9; - end - else - T4 = 1.0; - - dDIBL_Sft_dVd = T3 * theta0vb0; - DIBL_Sft = dDIBL_Sft_dVd * Vds; - - Vth = TYPE * vth0 - k1 * sqrtPhi - + k1ox * sqrtPhis - - k2ox * Vbseff - - Delt_vth - T2 - + (k3 + k3b * Vbseff) * tmp2 + T1 - DIBL_Sft; - - /*** end of Vth calculation ***/ - - /* Calculate n */ - tmp2 = nfactor * `EPSSI / Xdep; - tmp3 = cdsc + cdscb * Vbseff + cdscd * Vds; - tmp4 = (tmp2 + tmp3 * Theta0 + cit) / cox; - - if (tmp4 >= -0.5) - n = 1.0 + tmp4; - else - begin /* avoid discontinuity problems caused by tmp4 */ - T_0 = 1.0 / (3.0 + 8.0 * tmp4); - n = (1.0 + 3.0 * tmp4) * T_0; - end - - /* Poly Gate Si Depletion Effect */ - T_0 = vfb + phi; - - if ((ngate > 1.0e18) && (ngate < 1.0e25) && (Vgs > T_0)) - begin /* added to avoid the problem caused by ngate */ - T1 = 1.0e6 * `Charge_q * `EPSSI * ngate / (cox * cox); - T4 = sqrt(1.0 + 2.0 * (Vgs - T_0) / T1); - T2 = T1 * (T4 - 1.0); - T3 = 0.5 * T2 * T2 / T1; /* T3 = Vpoly */ - T7 = 1.12 - T3 - 0.05; - T6 = sqrt(T7 * T7 + 0.224); - T5 = 1.12 - 0.5 * (T7 + T6); - Vgs_eff = Vgs - T5; - end - else - Vgs_eff = Vgs; - - Vgst = Vgs_eff - Vth; - - /* Effective Vgst (Vgsteff) Calculation */ - T10 = 2.0 * n * Vtm; - VgstNVt = Vgst / T10; - ExpArg = (2.0 * voff - Vgst) / T10; - - /* MCJ: Very small Vgst */ - if (VgstNVt > `EXP_THRESHOLD) - begin - Vgsteff = Vgst; - end - else if (ExpArg > `EXP_THRESHOLD) - begin - T_0 = (Vgst - voff) / (n * Vtm); - ExpVgst = exp(T_0); - Vgsteff = Vtm * cdep0 / cox * ExpVgst; - end - else - begin - ExpVgst = exp(VgstNVt); - T1 = T10 * ln(1.0 + ExpVgst); - T2 = 1.0 - T10 * (-cox / (Vtm * cdep0) * exp(ExpArg)); - Vgsteff = T1 / T2; - end - - /* Calculate Effective Channel Geometry */ - T9 = sqrtPhis - sqrtPhi; - Weff = weff - 2.0 * (dwg * Vgsteff + dwb * T9); - - if (Weff < 2.0e-8) /* to avoid the discontinuity problem due to Weff*/ - begin - T_0 = 1.0 / (6.0e-8 - 2.0 * Weff); - Weff = 2.0e-8 * (4.0e-8 - Weff) * T_0; - end - - T_0 = prwg * Vgsteff + prwb * T9; - if (T_0 >= -0.9) - Rds = rds0 * (1.0 + T_0); - else /* to avoid the discontinuity problem due to prwg and prwb*/ - begin - T1 = 1.0 / (17.0 + 20.0 * T_0); - Rds = rds0 * (0.8 + T_0) * T1; - end - - /* Calculate Abulk */ - T1 = 0.5 * k1ox / sqrtPhis; - - T9 = sqrt(xj * Xdep); - tmp1 = Leff + 2.0 * T9; - T5 = Leff / tmp1; - tmp2 = a0 * T5; - tmp3 = weff + b1; - tmp4 = b0 / tmp3; - T2 = tmp2 + tmp4; - T6 = T5 * T5; - T7 = T5 * T6; - - Abulk0 = 1.0 + T1 * T2; - - T8 = ags * a0 * T7; - - Abulk = Abulk0 + (-T1 * T8) * Vgsteff; - - if (Abulk0 < 0.1) /* added to avoid the problems caused by Abulk0 */ - begin - T9 = 1.0 / (3.0 - 20.0 * Abulk0); - Abulk0 = (0.2 - Abulk0) * T9; - end - - if (Abulk < 0.1) /* added to avoid the problems caused by Abulk */ - begin - T9 = 1.0 / (3.0 - 20.0 * Abulk); - Abulk = (0.2 - Abulk) * T9; - end - - T2 = keta * Vbseff; - if (T2 >= -0.9) - T_0 = 1.0 / (1.0 + T2); - else /* added to avoid the problems caused by Keta */ - begin - T1 = 1.0 / (0.8 + T2); - T_0 = (17.0 + 20.0 * T2) * T1; - end - - Abulk = T_0 * Abulk; - Abulk0 = T_0 * Abulk0; - - /* Mobility calculation */ - if (MOBMOD == 1) - begin - T_0 = Vgsteff + Vth + Vth; - T2 = ua + uc * Vbseff; - T3 = T_0 / tox; - T5 = T3 * (T2 + ub * T3); - end - else if (MOBMOD == 2) - T5 = Vgsteff / tox * (ua + uc * Vbseff + ub * Vgsteff / tox); - else - begin - T_0 = Vgsteff + Vth + Vth; - T2 = 1.0 + uc * Vbseff; - T3 = T_0 / tox; - T4 = T3 * (ua + ub * T3); - T5 = T4 * T2; - end - - if (T5 >= -0.8) - Denomi = 1.0 + T5; - else /* Added to avoid the discontinuity problem caused by ua and ub*/ - Denomi = (0.6 + T5) * (1.0 / (7.0 + 10.0 * T5)); - - ueff = u0temp / Denomi; - - /* Saturation Drain Voltage Vdsat */ - WVCox = Weff * vsattemp * cox; - WVCoxRds = WVCox * Rds; - - Esat = 2.0 * vsattemp / ueff; - EsatL = Esat * Leff; - - /* Sqrt() */ - if (a1 == 0.0) - Lambda = a2; - else if (a1 > 0.0) - /* Added to avoid the discontinuity problem caused by a1 and a2 (Lambda) */ - begin - T_0 = 1.0 - a2; - T1 = T_0 - a1 * Vgsteff - 0.0001; - T2 = sqrt(T1 * T1 + 0.0004 * T_0); - Lambda = a2 + T_0 - 0.5 * (T1 + T2); - end - else - begin - T1 = a2 + a1 * Vgsteff - 0.0001; - T2 = sqrt(T1 * T1 + 0.0004 * a2); - Lambda = 0.5 * (T1 + T2); - end - - Vgst2Vtm = Vgsteff + 2.0 * Vtm; - - if ((Rds == 0.0) && (Lambda == 1.0)) - begin - T_0 = 1.0 / (Abulk * EsatL + Vgst2Vtm); - tmp1 = 0.0; - T1 = T_0 * T_0; - T2 = Vgst2Vtm * T_0; - T3 = EsatL * Vgst2Vtm; - Vdsat = T3 * T_0; - end - else - begin - T9 = Abulk * WVCoxRds; - T7 = Vgst2Vtm * T9; - T6 = Vgst2Vtm * WVCoxRds; - T_0 = 2.0 * Abulk * (T9 - 1.0 + 1.0 / Lambda); - - T1 = Vgst2Vtm * (2.0 / Lambda - 1.0) + Abulk * EsatL + 3.0 * T7; - T2 = Vgst2Vtm * (EsatL + 2.0 * T6); - T3 = sqrt(T1 * T1 - 2.0 * T_0 * T2); - - Vdsat = (T1 - T3) / T_0; - end - - vdsat = Vdsat; - - /* Effective Vds (Vdseff) Calculation */ - T1 = Vdsat - Vds - delta; - T2 = sqrt(T1 * T1 + 4.0 * delta * Vdsat); - Vdseff = Vdsat - 0.5 * (T1 + T2); - - if ((Vds == 0.0) && (VERSION == 3.24)) - Vdseff = 0.0; - - /* Calculate VAsat */ - tmp4 = 1.0 - 0.5 * Abulk * Vdsat / Vgst2Vtm; - T9 = WVCoxRds * Vgsteff; - T_0 = EsatL + Vdsat + 2.0 * T9 * tmp4; - T9 = WVCoxRds * Abulk; - T1 = 2.0 / Lambda - 1.0 + T9; - - Vasat = T_0 / T1; - - if (Vdseff > Vds) - Vdseff = Vds; /* This code is added to fixed the problem - caused by computer precision when - Vds is very close to Vdseff. */ - diffVds = Vds - Vdseff; - - /* Calculate VACLM */ - if ((pclm > 0.0) && (diffVds > 1.0e-10)) - begin - T_0 = 1.0 / (pclm * Abulk * litl); - T2 = Vgsteff / EsatL; - T1 = Leff * (Abulk + T2); - T9 = T_0 * T1; - VACLM = T9 * diffVds; - end - else - VACLM = `MAX_EXP; - - /* Calculate VADIBL */ - if (thetaRout > 0.0) - begin - T_0 = Vgst2Vtm * Abulk * Vdsat; - T1 = Vgst2Vtm + (Abulk * Vdsat); - VADIBL = (Vgst2Vtm - T_0 / T1) / thetaRout; - - T7 = pdiblb * Vbseff; - if (T7 >= -0.9) - begin - T3 = 1.0 / (1.0 + T7); - VADIBL = T3 * VADIBL; - end - else - /* Added to avoid the discontinuity problem caused by pdiblcb */ - begin - T4 = 1.0 / (0.8 + T7); - T3 = (17.0 + 20.0 * T7) * T4; - VADIBL = T3 * VADIBL; - end - end - else - VADIBL = `MAX_EXP; - - /* Calculate VA */ - T9 = pvag / EsatL * Vgsteff; - - if (T9 > -0.9) - T_0 = 1.0 + T9; - else /* Added to avoid the discontinuity problems caused by pvag */ - T_0 = (0.8 + T9) * 1.0 / (17.0 + 20.0 * T9); - - T1 = VACLM * VADIBL / (VACLM + VADIBL); - Va = Vasat + T_0 * T1; - - /* Calculate VASCBE */ - if (pscbe2 > 0.0) - begin - if ( diffVds > (pscbe1 * litl / `EXP_THRESHOLD) ) - VASCBE = Leff * exp(pscbe1 * litl / diffVds) / pscbe2; - else - VASCBE = `MAX_EXP * Leff / pscbe2; - end - else - VASCBE = `MAX_EXP; - - /* Calculate Ids */ - CoxWovL = cox * Weff / Leff; - beta = ueff * CoxWovL; - - fgche1 = Vgsteff * (1.0 - 0.5 * Abulk * Vdseff / Vgst2Vtm); - fgche2 = 1.0 + (Vdseff / EsatL); - - gche = beta * fgche1 / fgche2; - Idl = gche * Vdseff / (1.0 + gche * Rds); - - Idsa = Idl * (1.0 + (diffVds / Va)); - Ids = Idsa * (1.0 + (diffVds / VASCBE)); - - /* Substrate current begins */ - tmp = alpha0 + alpha1 * Leff; - - if ((tmp <= 0.0) || (beta0 <= 0.0)) - Isub = 0.0; - else - begin - T2 = tmp / Leff; - - if (diffVds > beta0 / `EXP_THRESHOLD) - T1 = T2 * diffVds * exp(-beta0 / diffVds); - else - T1 = T2 * `MIN_EXP * diffVds; - - Isub = T1 * Idsa; - end - - cdrain = Ids; - csub = Isub; - - // End of I-V model - - - // C-V model - - // *** Depletion capacitance calculation *** - - /* charge storage elements - * bulk-drain and bulk-source depletion capacitances - * czbd : zero bias drain junction capacitance - * czbs : zero bias source junction capacitance - * czbdsw: zero bias drain junction sidewall capacitance - along field oxide - * czbssw: zero bias source junction sidewall capacitance - along field oxide - * czbdswg: zero bias drain junction sidewall capacitance - along gate side - * czbsswg: zero bias source junction sidewall capacitance - along gate side - */ - if (VERSION == 3.24) - begin - czbd = unitAreaTempJctCap * drainArea; - czbs = unitAreaTempJctCap * sourceArea; - end - else - begin - czbd = unitAreaJctCap * drainArea; - czbs = unitAreaJctCap * sourceArea; - end - - if (drainPerimeter < weff) - begin - if (VERSION == 3.24) - czbdswg = unitLengthGateSidewallTempJctCap * drainPerimeter; - else - czbdswg = unitLengthGateSidewallJctCap * drainPerimeter; - czbdsw = 0.0; - end - else - begin - if (VERSION == 3.24) - begin - czbdsw = unitLengthSidewallTempJctCap * (drainPerimeter - weff); - czbdswg = unitLengthGateSidewallTempJctCap * weff; - end - else - begin - czbdsw = unitLengthSidewallJctCap * (drainPerimeter - weff); - czbdswg = unitLengthGateSidewallJctCap * weff; - end - end - - if (sourcePerimeter < weff) - begin - czbssw = 0.0; - if (VERSION == 3.24) - czbsswg = unitLengthGateSidewallTempJctCap * sourcePerimeter; - else - czbsswg = unitLengthGateSidewallJctCap * sourcePerimeter; - end - else - begin - if (VERSION == 3.24) - begin - czbssw = unitLengthSidewallTempJctCap * (sourcePerimeter - weff); - czbsswg = unitLengthGateSidewallTempJctCap * weff; - end - else - begin - czbssw = unitLengthSidewallJctCap * (sourcePerimeter - weff); - czbsswg = unitLengthGateSidewallJctCap * weff; - end - end - - mj = bulkJctBotGradingCoeff; - mjsw = bulkJctSideGradingCoeff; - mjswg = bulkJctGateSideGradingCoeff; - - - qbs = 0.0; - qbd = 0.0; - - /* Source Bulk Junction */ - if (vbs == 0.0) - begin - qbs = 0.0; - capbs = czbs + czbssw + czbsswg; - end - else if (vbs < 0.0) - begin - if (czbs > 0.0) - begin - arg = 1.0 - vbs / PhiB; - - if (mj == 0.5) - sarg = 1.0 / sqrt(arg); - else - sarg = exp(-mj * ln(arg)); - - qbs = PhiB * czbs * (1.0 - arg * sarg) / (1.0 - mj); - capbs = czbs * sarg; - end - else - begin - qbs = 0.0; - capbs = 0.0; - end // else: !if(czbs > 0.0) - - if (czbssw > 0.0) - begin - arg = 1.0 - vbs / PhiBSW; - - if (mjsw == 0.5) - sarg = 1.0 / sqrt(arg); - else - sarg = exp(-mjsw * ln(arg)); - - qbs = qbs + PhiBSW * czbssw * (1.0 - arg * sarg) / (1.0 - mjsw); - capbs = capbs + czbssw * sarg; - end // if (czbssw > 0.0) - - if (czbsswg > 0.0) - begin - arg = 1.0 - vbs / PhiBSWG; - - if (mjswg == 0.5) - sarg = 1.0 / sqrt(arg); - else - sarg = exp(-mjswg * ln(arg)); - - qbs = qbs + PhiBSWG * czbsswg * (1.0 - arg * sarg) / (1.0 - mjswg); - capbs = capbs + czbsswg * sarg; - end - end - else - begin - T_0 = czbs + czbssw + czbsswg; - T1 = vbs * (czbs * mj / PhiB + czbssw * mjsw / PhiBSW + czbsswg * mjswg / PhiBSWG); - - qbs = vbs * (T_0 + 0.5 * T1); - capbs = T_0 + T1; - end - - /* Drain Bulk Junction */ - if (vbd == 0.0) - begin - qbd = 0.0; - capbd = czbd + czbdsw + czbdswg; - end - else if (vbd < 0.0) - begin - if (czbd > 0.0) - begin - arg = 1.0 - vbd / PhiB; - - if (mj == 0.5) - sarg = 1.0 / sqrt(arg); - else - sarg = exp(-mj * ln(arg)); - - qbd = PhiB * czbd * (1.0 - arg * sarg) / (1.0 - mj); - capbd = czbd * sarg; - end - else - begin - qbd = 0.0; - capbd = 0.0; - end // else: !if(czbd > 0.0) - - if (czbdsw > 0.0) - begin - arg = 1.0 - vbd / PhiBSW; - - if (mjsw == 0.5) - sarg = 1.0 / sqrt(arg); - else - sarg = exp(-mjsw * ln(arg)); - - qbd = qbd + PhiBSW * czbdsw * (1.0 - arg * sarg) / (1.0 - mjsw); - capbd = capbd + czbdsw * sarg; - end // if (czbdsw > 0.0) - - if (czbdswg > 0.0) - begin - arg = 1.0 - vbd / PhiBSWG; - - if (mjswg == 0.5) - sarg = 1.0 / sqrt(arg); - else - sarg = exp(-mjswg * ln(arg)); - - qbd = qbd + PhiBSWG * czbdswg * (1.0 - arg * sarg) / (1.0 - mjswg); - capbd = capbd + czbdswg * sarg; - end - end - else - begin - T_0 = czbd + czbdsw + czbdswg; - T1 = vbd * (czbd * mj / PhiB + czbdsw * mjsw / PhiBSW + czbdswg * mjswg / PhiBSWG); - - qbd = vbd * (T_0 + 0.5 * T1); - capbd = T_0 + T1; - end - - // *** Intrinsic charge calculation *** - // qdrn, qgate, qsrc, qbulk - - qgate = 0.0; - qdrn = 0.0; - qsrc = 0.0; - qbulk = 0.0; - - if (XPART < 0) - begin - qgate = 0.0; - qdrn = 0.0; - qsrc = 0.0; - qbulk = 0.0; -`ifdef NQSMOD - gtau = 0.0; -`endif - end - else if (CAPMOD == 0) - begin - if (Vbseff < 0.0) - Vbseff = Vbs; - else - Vbseff = phi - Phis; - - Vfb = vfbcv; - Vth = Vfb + phi + k1ox * sqrtPhis; - - Vgst = Vgs_eff - Vth; - - CoxWL = cox * weffCV * leffCV; - Arg1 = Vgs_eff - Vbseff - Vfb; - - if (Arg1 <= 0.0) - begin - qgate = CoxWL * Arg1; - qbulk = -qgate; - qdrn = 0.0; - - qinv = 0.0; - end - else if (Vgst <= 0.0) - begin - T1 = 0.5 * k1ox; - T2 = sqrt(T1 * T1 + Arg1); - qgate = CoxWL * k1ox * (T2 - T1); - qbulk = -qgate; - qdrn = 0.0; - - qinv = 0.0; - end - else - begin - One_Third_CoxWL = CoxWL / 3.0; - Two_Third_CoxWL = 2.0 * One_Third_CoxWL; - - AbulkCV = Abulk0 * abulkCVfactor; - Vdsat = Vgst / AbulkCV; - - if (XPART > 0.5) - begin - /* 0/100 Charge partition model */ - if (Vdsat <= Vds) - begin /* saturation region */ - T1 = Vdsat / 3.0; - qgate = CoxWL * (Vgs_eff - Vfb - phi - T1); - T2 = -Two_Third_CoxWL * Vgst; - qbulk = -(qgate + T2); - qdrn = 0.0; - - qinv = -(qgate + qbulk); - end - else - begin - /* linear region */ - Alphaz = Vgst / Vdsat; - T1 = 2.0 * Vdsat - Vds; - T2 = Vds / (3.0 * T1); - T3 = T2 * Vds; - T9 = 0.25 * CoxWL; - T4 = T9 * Alphaz; - T7 = 2.0 * Vds - T1 - 3.0 * T3; - T8 = T3 - T1 - 2.0 * Vds; - qgate = CoxWL * (Vgs_eff - Vfb - phi - 0.5 * (Vds - T3)); - T10 = T4 * T8; - qdrn = T4 * T7; - qbulk = -(qgate + qdrn + T10); - - qinv = -(qgate + qbulk); - end - end // if (XPART > 0.5) - - else if (XPART < 0.5) - - begin /* 40/60 Charge partition model */ - - if (Vds >= Vdsat) - begin /* saturation region */ - T1 = Vdsat / 3.0; - qgate = CoxWL * (Vgs_eff - Vfb - phi - T1); - T2 = -Two_Third_CoxWL * Vgst; - qbulk = -(qgate + T2); - qdrn = 0.4 * T2; - - qinv = -(qgate + qbulk); - end - else - begin /* linear region */ - Alphaz = Vgst / Vdsat; - T1 = 2.0 * Vdsat - Vds; - T2 = Vds / (3.0 * T1); - T3 = T2 * Vds; - T9 = 0.25 * CoxWL; - T4 = T9 * Alphaz; - qgate = CoxWL * (Vgs_eff - Vfb - phi - 0.5 * (Vds - T3)); - - T6 = 8.0 * Vdsat * Vdsat - 6.0 * Vdsat * Vds - + 1.2 * Vds * Vds; - T8 = T2 / T1; - T7 = Vds - T1 - T8 * T6; - qdrn = T4 * T7; - - T7 = 2.0 * (T1 + T3); - qbulk = -(qgate - T4 * T7); - - qinv = -(qgate + qbulk); - end // else: !if(Vds >= Vdsat) - end // if (XPART < 0.5) - else - begin /* 50/50 partitioning */ - if (Vds >= Vdsat) - begin /* saturation region */ - T1 = Vdsat / 3.0; - qgate = CoxWL * (Vgs_eff - Vfb - phi - T1); - T2 = -Two_Third_CoxWL * Vgst; - qbulk = -(qgate + T2); - qdrn = 0.5 * T2; - - qinv = -(qgate + qbulk); - end - else - begin /* linear region */ - Alphaz = Vgst / Vdsat; - T1 = 2.0 * Vdsat - Vds; - T2 = Vds / (3.0 * T1); - T3 = T2 * Vds; - T9 = 0.25 * CoxWL; - T4 = T9 * Alphaz; - qgate = CoxWL * (Vgs_eff - Vfb - phi - 0.5 * (Vds - T3)); - - T7 = T1 + T3; - qdrn = -T4 * T7; - qbulk = - (qgate + qdrn + qdrn); - - qinv = -(qgate + qbulk); - end - end - end - end - else - begin - if (Vbseff < 0.0) - VbseffCV = Vbseff; - else - VbseffCV = phi - Phis; - - CoxWL = cox * weffCV * leffCV; - - /* Seperate VgsteffCV with noff and voffcv */ - Noff2 = n * noff_param; - T_0 = Vtm * Noff2; - VgstNVt = (Vgst - voffcv_param) / T_0; - - if (VgstNVt > `EXP_THRESHOLD) - Vgsteff = Vgst - voffcv_param; - else if (VgstNVt < -`EXP_THRESHOLD) - Vgsteff = T_0 * ln(1.0 + `MIN_EXP); - else - begin - ExpVgst = exp(VgstNVt); - Vgsteff = T_0 * ln(1.0 + ExpVgst); - end /* End of VgsteffCV - Weidong 5/1998 */ - - if (CAPMOD == 1) - begin - if (VERSION < 3.2) - Vfb = Vth - phi - k1ox * sqrtPhis; - else - Vfb = vfbzb; - - Arg1 = Vgs_eff - VbseffCV - Vfb - Vgsteff; - - if (Arg1 <= 0.0) - qgate = CoxWL * Arg1; - else - begin - T_0 = 0.5 * k1ox; - T1 = sqrt(T_0 * T_0 + Arg1); - qgate = CoxWL * k1ox * (T1 - T_0); - end - - qbulk = -qgate; - - One_Third_CoxWL = CoxWL / 3.0; - Two_Third_CoxWL = 2.0 * One_Third_CoxWL; - - AbulkCV = Abulk0 * abulkCVfactor; - VdsatCV = Vgsteff / AbulkCV; - - if (VdsatCV < Vds) - begin - T_0 = Vgsteff - VdsatCV / 3.0; - qgate = qgate + CoxWL * T_0; - - T_0 = VdsatCV - Vgsteff; - qbulk = qbulk + One_Third_CoxWL * T_0; - - if (XPART > 0.5) - T_0 = -Two_Third_CoxWL; - else if (XPART < 0.5) - T_0 = -0.4 * CoxWL; - else - T_0 = -One_Third_CoxWL; - - qsrc = T_0 * Vgsteff; - end - else - begin - T_0 = AbulkCV * Vds; - T1 = 12.0 * (Vgsteff - 0.5 * T_0 + 1.0e-20); - T2 = Vds / T1; - T3 = T_0 * T2; - - qgate = qgate + CoxWL * (Vgsteff - 0.5 * Vds + T3); - qbulk = qbulk + CoxWL * (1.0 - AbulkCV) * (0.5 * Vds - T3); - - if (XPART > 0.5) - begin /* 0/100 Charge petition model */ - qsrc = -CoxWL * (0.5 * Vgsteff + 0.25 * T_0 - T_0 * T_0 / (T1 + T1)); - end - else if (XPART < 0.5) - begin /* 40/60 Charge petition model */ - T2 = 0.5 * CoxWL / (T1 / 12.0 * T1 / 12.0); - T3 = Vgsteff * (2.0 * T_0 * T_0 / 3.0 + Vgsteff * (Vgsteff - 4.0 * T_0 / 3.0)) - - 2.0 * T_0 * T_0 * T_0 / 15.0; - qsrc = -T2 * T3; - end - else - begin /* 50/50 Charge petition model */ - qsrc = -0.5 * (qgate + qbulk); - end - end - - qdrn = -(qgate + qbulk + qsrc); - qinv = -(qgate + qbulk); - end // if (CAPMOD == 1) - - else if (CAPMOD == 2) - begin - if (VERSION < 3.2) - Vfb = Vth - phi - k1ox * sqrtPhis; - else - Vfb = vfbzb; - - V3 = Vfb - Vgs_eff + VbseffCV - `DELTA_3; - if (Vfb <= 0.0) - begin - T_0 = sqrt(V3 * V3 - 4.0 * `DELTA_3 * Vfb); - T2 = -`DELTA_3 / T_0; - end - else - begin - T_0 = sqrt(V3 * V3 + 4.0 * `DELTA_3 * Vfb); - T2 = `DELTA_3 / T_0; - end - - T1 = 0.5 * (1.0 + V3 / T_0); - Vfbeff = Vfb - 0.5 * (V3 + T_0); - Qac0 = CoxWL * (Vfbeff - Vfb); - - T_0 = 0.5 * k1ox; - T3 = Vgs_eff - Vfbeff - VbseffCV - Vgsteff; - - if (k1ox == 0.0) - begin - T1 = 0.0; - T2 = 0.0; - end - else if (T3 < 0.0) - begin - T1 = T_0 + T3 / k1ox; - T2 = CoxWL; - end - else - begin - T1 = sqrt(T_0 * T_0 + T3); - T2 = CoxWL * T_0 / T1; - end - - Qsub0 = CoxWL * k1ox * (T1 - T_0); - - AbulkCV = Abulk0 * abulkCVfactor; - VdsatCV = Vgsteff / AbulkCV; - - V4 = VdsatCV - Vds - `DELTA_4; - T_0 = sqrt(V4 * V4 + 4.0 * `DELTA_4 * VdsatCV); - VdseffCV = VdsatCV - 0.5 * (V4 + T_0); - - /* Added to eliminate non-zero VdseffCV at Vds=0.0 */ - if ((Vds == 0.0) && (VERSION == 3.24)) - VdseffCV = 0.0; - - T_0 = AbulkCV * VdseffCV; - T1 = 12.0 * (Vgsteff - 0.5 * T_0 + 1e-20); - T2 = VdseffCV / T1; - T3 = T_0 * T2; - - T4 = (1.0 - 12.0 * T2 * T2 * AbulkCV); - T5 = (6.0 * T_0 * (4.0 * Vgsteff - T_0) / (T1 * T1) - 0.5); - T6 = 12.0 * T2 * T2 * Vgsteff; - - qinoi = -CoxWL * (Vgsteff - 0.5 * T_0 + AbulkCV * T3); - qgate = CoxWL * (Vgsteff - 0.5 * VdseffCV + T3); - - T7 = 1.0 - AbulkCV; - qbulk = CoxWL * T7 * (0.5 * VdseffCV - T3); - - if (XPART > 0.5) - begin /* 0/100 Charge petition model */ - qsrc = -CoxWL * (0.5 * Vgsteff + 0.25 * T_0 - T_0 * T_0 / (T1 + T1)); - end - else if (XPART < 0.5) - begin /* 40/60 Charge petition model */ - T2 = 0.5 * CoxWL / (T1 / 12.0 * T1 / 12.0); - T3 = Vgsteff * (2.0 * T_0 * T_0 / 3.0 + Vgsteff * (Vgsteff - 4.0 * T_0 / 3.0)) - - 2.0 * T_0 * T_0 * T_0 / 15.0; - qsrc = -T2 * T3; - end - else - begin /* 50/50 Charge petition model */ - qsrc = -0.5 * (qgate + qbulk); - end - - qgate = qgate + Qac0 + Qsub0; - qbulk = qbulk - (Qac0 + Qsub0); - qdrn = -(qgate + qbulk + qsrc); - - qinv = qinoi; - end - /* New Charge-Thickness capMod (CTM) begins - Weidong 7/1997 */ - else if (CAPMOD == 3) - begin - V3 = vfbzb - Vgs_eff + VbseffCV - `DELTA_3; - - if (vfbzb <= 0.0) - begin - T_0 = sqrt(V3 * V3 - 4.0 * `DELTA_3 * vfbzb); - T2 = -`DELTA_3 / T_0; - end - else - begin - T_0 = sqrt(V3 * V3 + 4.0 * `DELTA_3 * vfbzb); - T2 = `DELTA_3 / T_0; - end - - T1 = 0.5 * (1.0 + V3 / T_0); - Vfbeff = vfbzb - 0.5 * (V3 + T_0); - - Cox = cox; - Tox = 1.0e8 * tox; - T_0 = (Vgs_eff - VbseffCV - vfbzb) / Tox; - - tmp = T_0 * acde; - - if ((-`EXP_THRESHOLD < tmp) && (tmp < `EXP_THRESHOLD)) - Tcen = ldeb * exp(tmp); - else if (tmp <= -`EXP_THRESHOLD) - Tcen = ldeb * `MIN_EXP; - else - Tcen = ldeb * `MAX_EXP; - - LINK = 1.0e-3 * tox; - V3 = ldeb - Tcen - LINK; - V4 = sqrt(V3 * V3 + 4.0 * LINK * ldeb); - Tcen = ldeb - 0.5 * (V3 + V4); - T1 = 0.5 * (1.0 + V3 / V4); - - Ccen = `EPSSI / Tcen; - T2 = Cox / (Cox + Ccen); - Coxeff = T2 * Ccen; - T3 = -Ccen / Tcen; - CoxWLcen = CoxWL * Coxeff / Cox; - - Qac0 = CoxWLcen * (Vfbeff - vfbzb); - - T_0 = 0.5 * k1ox; - T3 = Vgs_eff - Vfbeff - VbseffCV - Vgsteff; - - if (k1ox == 0.0) - begin - T1 = 0.0; - T2 = 0.0; - end - else if (T3 < 0.0) - begin - T1 = T_0 + T3 / k1ox; - T2 = CoxWLcen; - end - else - begin - T1 = sqrt(T_0 * T_0 + T3); - T2 = CoxWLcen * T_0 / T1; - end - - Qsub0 = CoxWLcen * k1ox * (T1 - T_0); - - /* Gate-bias dependent delta Phis begins */ - if (k1ox <= 0.0) - begin - Denomi = 0.25 * moin * Vtm; - T_0 = 0.5 * sqrtPhi; - end - else - begin - Denomi = moin * Vtm * k1ox * k1ox; - T_0 = k1ox * sqrtPhi; - end - - T1 = 2.0 * T_0 + Vgsteff; - - DeltaPhi = Vtm * ln(1.0 + T1 * Vgsteff / Denomi); - /* End of delta Phis */ - - T3 = 4.0 * (Vth - vfbzb - phi); - Tox2 = Tox + Tox; - - if (T3 >= 0.0) - T_0 = (Vgsteff + T3) / Tox2; - else - T_0 = (Vgsteff + 1.0e-20) / Tox2; - - tmp = exp(0.7 * ln(T_0)); - T1 = 1.0 + tmp; - T2 = 0.7 * tmp / (T_0 * Tox2); - Tcen = 1.9e-9 / T1; - - Ccen = `EPSSI / Tcen; - T_0 = Cox / (Cox + Ccen); - Coxeff = T_0 * Ccen; - T1 = -Ccen / Tcen; - CoxWLcen = CoxWL * Coxeff / Cox; - - AbulkCV = Abulk0 * abulkCVfactor; - VdsatCV = (Vgsteff - DeltaPhi) / AbulkCV; - V4 = VdsatCV - Vds - `DELTA_4; - T_0 = sqrt(V4 * V4 + 4.0 * `DELTA_4 * VdsatCV); - VdseffCV = VdsatCV - 0.5 * (V4 + T_0); - T1 = 0.5 * (1.0 + V4 / T_0); - T2 = `DELTA_4 / T_0; - T3 = (1.0 - T1 - T2) / AbulkCV; - - if ((Vds == 0.0) && (VERSION == 3.24)) - VdseffCV = 0.0; - - T_0 = AbulkCV * VdseffCV; - T1 = Vgsteff - DeltaPhi; - T2 = 12.0 * (T1 - 0.5 * T_0 + 1.0e-20); - T3 = T_0 / T2; - T4 = 1.0 - 12.0 * T3 * T3; - T5 = AbulkCV * (6.0 * T_0 * (4.0 * T1 - T_0) / (T2 * T2) - 0.5); - T6 = T5 * VdseffCV / AbulkCV; - - qinoi = CoxWLcen * (T1 - T_0 * (0.5 - T3)); - qgate = qinoi; - - T7 = 1.0 - AbulkCV; - - qbulk = CoxWLcen * T7 * (0.5 * VdseffCV - T_0 * VdseffCV / T2); - - if (XPART > 0.5) - begin /* 0/100 partition */ - qsrc = -CoxWLcen * (T1 / 2.0 + T_0 / 4.0 - 0.5 * T_0 * T_0 / T2); - end - else if (XPART < 0.5) - begin /* 40/60 partition */ - T2 = T2 / 12.0; - T3 = 0.5 * CoxWLcen / (T2 * T2); - T4 = T1 * (2.0 * T_0 * T_0 / 3.0 + T1 - * (T1 - 4.0 * T_0 / 3.0)) - 2.0 * T_0 * T_0 * T_0 / 15.0; - qsrc = -T3 * T4; - end - else - begin /* 50/50 partition */ - qsrc = -0.5 * qgate; - end - - qgate = qgate + Qac0 + Qsub0 - qbulk; - qbulk = qbulk - (Qac0 + Qsub0); - qdrn = -(qgate + qbulk + qsrc); - - qinv = -qinoi; - end /* End of CTM */ - end - // *** end of intrinsic charge calculation *** - -`ifdef NQSMOD - /* NQS (Mansun 11/1993) modified by Weidong & Min-Chie 1997-1998 */ - if (NQSMOD) - begin - qcheq = -(qbulk + qgate); - - gtau_drift = abs(tconst * qcheq) * ScalingFactor; - gtau_diff = 16.0 * u0temp * vtm / (leffCV * leffCV) * ScalingFactor; - - gtau = gtau_drift + gtau_diff; - end -`endif - - qgdo = 0.0; - qgso = 0.0; - - // *** overlap capacitance charge calculation *** - if (CAPMOD == 0.0) - begin - qgdo = cgdo_param * vgd; - qgso = cgso_param * vgs; - end - else if (CAPMOD == 1.0) - begin - if (vgd < 0.0) - begin - T1 = sqrt(1.0 - 4.0 * vgd / ckappa); - qgdo = cgdo_param * vgd - weffCV * 0.5 * cgdl * ckappa * (T1 - 1.0); - end - else - begin - qgdo = (weffCV * cgdl + cgdo_param) * vgd; - end - - if (vgs < 0.0) - begin - T1 = sqrt(1.0 - 4.0 * vgs / ckappa); - qgso = cgso_param * vgs - weffCV * 0.5 * cgsl * ckappa * (T1 - 1.0); - end - else - begin - qgso = (weffCV * cgsl + cgso_param) * vgs; - end - end - else - begin - T_0 = vgd + `DELTA_1; - T1 = sqrt(T_0 * T_0 + 4.0 * `DELTA_1); - T2 = 0.5 * (T_0 - T1); - - T3 = weffCV * cgdl; - T4 = sqrt(1.0 - 4.0 * T2 / ckappa); - qgdo = (cgdo_param + T3) * vgd - T3 * (T2 + 0.5 * ckappa * (T4 - 1.0)); - - T_0 = vgs + `DELTA_1; - T1 = sqrt(T_0 * T_0 + 4.0 * `DELTA_1); - T2 = 0.5 * (T_0 - T1); - T3 = weffCV * cgsl; - T4 = sqrt(1.0 - 4.0 * T2 / ckappa); - qgso = (cgso_param + T3) * vgs - T3 * (T2 + 0.5 * ckappa * (T4 - 1.0)); - end - - // Add Overlap capacitance charges contribution to total node charge - // according to mode and NQS model - if (mode > 0) - begin - if (NQSMOD == 0) - begin - qgd = qgdo; - qgs = qgso; - qgb = cgbo_param * vgb; - - qgate = qgate + qgd + qgs + qgb; - qbulk = qbulk - qgb; - qdrn = qdrn - qgd; - qsrc = -(qgate + qbulk + qdrn); - -`ifdef NQSMOD - sxpart = 0.6; - dxpart = 0.4; -`endif - end // if (NQSMOD == 0) - else - begin - CoxWL = cox * weffCV * leffCV; - -`ifdef NQSMOD - if ( abs(qcheq) <= 1.0e-5 * CoxWL ) - begin - if (XPART < 0.5) - dxpart = 0.4; - else if (XPART > 0.5) - dxpart = 0.0; - else - dxpart = 0.5; - end - else - dxpart = qdrn / qcheq; - - sxpart = 1.0 - dxpart; -`endif - - qgd = qgdo; - qgs = qgso; - qgb = cgbo_param * vgb; - - qgate = qgd + qgs + qgb; - qbulk = -qgb; - qdrn = -qgd; - qsrc = -(qgate + qbulk + qdrn); - end - end // if (mode > 0) - else - begin - if (NQSMOD == 0) - begin - qgd = qgdo; - qgs = qgso; - qgb = cgbo_param * vgb; - - qgate = qgate + qgd + qgs + qgb; - qbulk = qbulk - qgb; - qsrc = qdrn - qgs; - qdrn = -(qgate + qbulk + qsrc); - -`ifdef NQSMOD - sxpart = 0.4; - dxpart = 0.6; -`endif - end // if (NQSMOD == 0) - else - begin - CoxWL = cox * weffCV * leffCV; - -`ifdef NQSMOD - if ( abs(qcheq) <= 1.0e-5 * CoxWL ) - begin - if (XPART < 0.5) - sxpart = 0.4; - else if (XPART > 0.5) - sxpart = 0.0; - else - sxpart = 0.5; - end - else - sxpart = qdrn / qcheq; - - dxpart = 1.0 - sxpart; -`endif - - qgd = qgdo; - qgs = qgso; - qgb = cgbo_param * vgb; - - qgate = qgd + qgs + qgb; - qbulk = -qgb; - qsrc = -qgs; - qdrn = -(qgate + qbulk + qsrc); - end - end - -`ifdef NQSMOD - if (NQSMOD) - begin - qcdump = qdef * ScalingFactor; - - cqdef = ddt(qcdump); - cqcheq = ddt(qcheq); - end - - if (analysis("static")) - begin - dxpart = (mode > 0) ? 0.4 : 0.6; - sxpart = 1.0 - dxpart; - - if (NQSMOD) - gtau = 16.0 * u0temp * vtm / leffCV / leffCV * ScalingFactor; - else - gtau = 0.0; - end -`endif - - // Add depletion capacitance charge contribution - Qdrn = qdrn - qbd; - Qsrc = qsrc - qbs; - Qbulk = qbulk + qbd + qbs; - Qgate = qgate; - - if (mode > 0) - begin - I(drainp, sourcep) <+ TYPE * cdrain; - I(bulk, drainp) <+ TYPE * (cbd - csub); - I(bulk, sourcep) <+ TYPE * cbs; - end - else - begin - I(drainp, sourcep) <+ TYPE * (-cdrain); - I(bulk, drainp) <+ TYPE * cbd; - I(bulk, sourcep) <+ TYPE * (cbs - csub); - end - - // Process drain/source resistance - if ( drainConductance > 0.0 ) - I(drain, drainp) <+ drainConductance * V(drain, drainp); - else -// V(drain, drainp) <+ 0.0; // Changed to compile with ADMS 2.30, MEB. - I(drain, drainp) <+ V(drain, drainp)*1e3; // 1m Ohm connection. - if ( sourceConductance > 0.0 ) - I(source, sourcep) <+ sourceConductance * V(source, sourcep); - else -// V(source, sourcep) <+ 0.0; // Changed to compile with ADMS 2.30, MEB. - I(source, sourcep) <+ V(source, sourcep)*1e3; // 1m Ohm connection. - - // Charge current including overlap and depletion capacitance contribution - cqgate = TYPE * ddt(Qgate); - cqdrn = TYPE * ddt(Qdrn); - cqbulk = TYPE * ddt(Qbulk); - - I(gate) <+ TYPE * ddt(Qgate); // Changed to compile with ADMS 2.30, MEB. - I(drainp) <+ TYPE * ddt(Qdrn); - I(bulk) <+ TYPE * ddt(Qbulk); - I(sourcep) <+ -( (TYPE * ddt(Qgate)) + (TYPE * ddt(Qdrn)) + (TYPE * ddt(Qbulk)) ); // -(cqgate + cqdrn + cqbulk); -// -// Noise addeed to Qucs ADMS 2/.30 port, May 2013 M.E. Brinson. -// Basic noise implementation for NOIMOD = 4. -// - if (NOIMOD == 4) - begin - fourkt = 5.5226012e-23*Temp; - leffx2 = leff*leff; - I(drainp, sourcep) <+ flicker_noise( (KF*pow(cdrain, AF)) / (cox*leffx2), EF, "flicker" ); - I(drainp, sourcep) <+ white_noise( (fourkt*ueff*abs(qinv)) / leffx2, "channel" ); - I(drain, drainp) <+ white_noise( abs(fourkt*drainConductance), "thermal" ); - I(sourcep, source) <+ white_noise( abs(fourkt*sourceConductance), "thermal" ); - end - -`ifdef NQSMOD - if (NQSMOD) - begin - I(gate) <+ TYPE * (-1) * qdef * gtau; - I(drainp) <+ TYPE * dxpart * qdef * gtau; - I(sourcep) <+ TYPE * sxpart * qdef * gtau; - - I(q) <+ -TYPE * ( cqdef - cqcheq ); - I(q) <+ -V(q) * gtau; - end - else - begin - I(q) <+ GMIN * qdef; - end -`endif - - end // analog begin - -endmodule diff --git a/qucs-core/src/components/verilog/bsim3v34pMOS.va b/qucs-core/src/components/verilog/bsim3v34pMOS.va deleted file mode 100644 index ddad68b7bf..0000000000 --- a/qucs-core/src/components/verilog/bsim3v34pMOS.va +++ /dev/null @@ -1,3266 +0,0 @@ -/*****************************************************************/ -/* Berkeley BSIM3v3.2.0 & BSIM3v3.2.4 (default) Verilog-A model */ -/*****************************************************************/ -// -// UPDATED March 19 2004 -// Contributed By: -// Geoffrey Coram, Ph.D Senior CAD Engineer Analog Devices, Inc. -// -// Qucs port of BSIM3v34 Mike Brinson, May 2013. -// Open source Verilog-A code can be found at: -// "Silvaco Offers Free Open-Source Verilog-A Device Models": -// http://www.silvaco.com/news/pressreleases/2004_03_02_01.html -// https://dynamic.silvaco.com/dynamicweb/jsp/downloads/EntryAction.do?action=silen-menu&key=2206&format=22 -// -// Technical details of the BSIM3,34 compact device model can be found at: -// William Liu, "MOSFET Models for SPICE Simulation including BSIM3v3 and BSIM4", -// Wiley _Interscience, John Wiley & Sons Inc., New York, 2001. -// ISBN: 0-471-9697-4. -// -// Changes to original code needed to compile with ADMS 2.30/Qucs are marked below. -// - - -`define VOLTAGE_MAXDELTA 0.3 - -// `include "discipline.h" // Change MEB. - `include "disciplines.vams" -// Following line must be uncomment for using NQS charge model (NQSMOD=1) -//`define NQSMOD - -//****** Physical constants ******// -`define EPSOX 3.453133e-11 -`define KboQ 8.617087e-5 -`define EPSSI 1.03594e-10 -`define Charge_q 1.60219e-19 -`define CONSTvt0 0.02586419 -`define CONSTroot2 1.41421356 - -//****** Mathematical constants and constants of limitation ******// -`define PI 3.141592654 -`define EXP_THRESHOLD 34.0 -`define MIN_EXP 1.713908431e-15 -`define MAX_EXP 5.834617425e14 - -// //****** Constants for the model ******// -`define DELTA_1 0.02 -`define DELTA_3 0.02 -`define DELTA_4 0.02 - -module bsim3v34pMOS(drain, gate, source, bulk); // module name changed to bsim3v34pmos, MEB. - inout drain, gate, source, bulk; - electrical drain, gate, source, bulk; - electrical drainp, sourcep; // internal nodes -`ifdef NQSMOD - electrical q; // NQS charge model node -`endif - - //****** Device Parameters ******// - parameter real L = 3.5e-6; - parameter real W = 5.0e-6; - parameter real PS = 8.0e-6; - parameter real PD = 8.0e-6; - parameter real AS = 12.0e-12; - parameter real AD = 12.0e-12; - parameter real NRS = 10.0; // Number of source diffusion squares - parameter real NRD = 10.0; // Number of drain diffusion squares - parameter real NQSMOD = 0; // Non-quasi-static model selector - - parameter real GMIN = 1e-12; - - // Versions can be 3.20 or 3.24 - // (BSIM3v3.2.0 or BSIM3v3.2.4) - parameter real VERSION = 3.24; - parameter real PARAMCHK = 0; - - //****** Model Selectors/Controllers ******// Modifications to compile cleanly, MEB. - parameter real MOBMOD = 1; // Mobility model selector - parameter real CAPMOD = 3; // Capacitance model selector - parameter real NOIMOD = 4; - parameter real BINUNIT = 1; // Bin unit selector - - parameter real TOX = 150.0e-10; // Gate oxide thickness in meters - parameter real TOXM = 150.0e-10; // = TOX Gate oxide thickness used in extraction - - parameter real CDSC = 2.4e-4; // Drain/Source and channel coupling capacitance - parameter real CDSCB = 0.0; // Body-bias dependence of cdsc - parameter real CDSCD = 0.0; // Drain-bias dependence of cdsc - parameter real CIT = 0.0; // Interface state capacitance - parameter real NFACTOR = 1; // Subthreshold swing Coefficient - parameter real XJ = 0.15e-6; // Junction depth in meters - parameter real VSAT = 8.0e4; // Saturation velocity at tnom - parameter real AT = 3.3e4; // Temperature coefficient of vsat - parameter real A0 = 1.0; // Non-uniform depletion width effect coefficient. - parameter real AGS = 0.0; // Gate bias coefficient of Abulk. - parameter real A1 = 0.0; // Non-saturation effect coefficient - parameter real A2 = 1.0; // Non-saturation effect coefficient - parameter real KETA = -0.047; // Body-bias coefficient of non-uniform depletion width effect. - parameter real NSUB = -99.0; // Substrate doping concentration - parameter real NCH = -99.0; // Channel doping concentration - parameter real NGATE = 0; // Poly-gate doping concentration - parameter real GAMMA1 = -99.0; // Vth body coefficient - parameter real GAMMA2 = -99.0; // Vth body coefficient - parameter real VBX = -99.0; // Vth transition body Voltage - parameter real VBM = -3.0; // Maximum body voltage - - parameter real XT = -99.0; // Doping depth - parameter real K1 = -99.0; // Bulk effect coefficient 1 - parameter real KT1 = -0.11; // Temperature coefficient of Vth - parameter real KT1L = 0.0; // Temperature coefficient of Vth - parameter real KT2 = 0.022; // Body-coefficient of kt1 - parameter real K2 = -99.0; // Bulk effect coefficient 2 - parameter real K3 = 80.0; // Narrow width effect coefficient - parameter real K3B = 0.0; // Body effect coefficient of k3 - parameter real W0 = 2.5e-6; // Narrow width effect parameter - parameter real NLX = 1.74e-7; // Lateral non-uniform doping effect - parameter real DVT0 = 2.2; // Short channel effect coeff. 0 - parameter real DVT1 = 0.53; // Short channel effect coeff. 1 - parameter real DVT2 = -0.032; // Short channel effect coeff. 2 - parameter real DVT0W = 0.0; // Narrow Width coeff. 0 - parameter real DVT1W = 5.3e6; // Narrow Width effect coeff. 1 - parameter real DVT2W = -0.032; // Narrow Width effect coeff. 2 - parameter real DROUT = 0.56; // DIBL coefficient of output resistance - parameter real DSUB = 0.56; // = DROUT DIBL coefficient in the subthreshold region - parameter real VTHO = -0.7; // Threshold voltage - parameter real VTH0 = -0.7; // Threshold voltage - - parameter real UA = 2.25e-9; // Linear gate dependence of mobility - parameter real UA1 = 4.31e-9; // Temperature coefficient of ua - parameter real UB = 5.87e-19; // Quadratic gate dependence of mobility - parameter real UB1 = -7.61e-18; // Temperature coefficient of ub - parameter real UC = -99.0; // Body-bias dependence of mobility - parameter real UC1 = -99.0; // Temperature coefficient of uc - parameter real U0 = -99.0; // Low-field mobility at Tnom - parameter real UTE = -1.5; // Temperature coefficient of mobility - parameter real VOFF = -0.08; // Threshold voltage offset - parameter real TNOM = 26.85; // Parameter measurement temperature in C degree - parameter real CGSO = -99.0; // Gate-source overlap capacitance per width - parameter real CGDO = -99.0; // Gate-drain overlap capacitance per width - parameter real CGBO = -99.0; // Gate-bulk overlap capacitance per length - parameter real XPART = 0.4; // Channel charge partitioning - parameter real ELM = 5.0; // Non-quasi-static Elmore Constant Parameter - parameter real DELTA = 0.01; // Effective Vds parameter - parameter real RSH = 0.0; // Source-drain sheet resistance - parameter real RDSW = 0; // Source-drain resistance per width - - parameter real PRWG = 0.0; // Gate-bias effect on parasitic resistance - parameter real PRWB = 0.0; // Body-effect on parasitic resistance - parameter real PRT = 0.0; // Temperature coefficient of parasitic resistance - parameter real ETA0 = 0.08; // Subthreshold region DIBL coefficient - parameter real ETAB = -0.07; // Subthreshold region DIBL coefficient - parameter real PCLM = 1.3; // Channel length modulation Coefficient - parameter real PDIBLC1 = 0.39; // Drain-induced barrier lowering coefficient - parameter real PDIBLC2 = 0.0086; // Drain-induced barrier lowering coefficient - parameter real PDIBLCB = 0.0; // Body-effect on drain-induced barrier lowering - parameter real PSCBE1 = 4.24e8; // Substrate current body-effect coefficient - parameter real PSCBE2 = 1.0e-5; // Substrate current body-effect coefficient - parameter real PVAG = 0.0; // Gate dependence of output resistance parameter - parameter real JS = 1.0E-4; // Source/drain junction reverse saturation current density - parameter real JSW = 0.0; // Sidewall junction reverse saturation current density - parameter real PB = 1.0; // Source/drain junction built-in potential - parameter real NJ = 1.0; // Source/drain junction emission coefficient - parameter real XTI = 3.0; // Junction current temperature exponent - parameter real MJ = 0.5; // Source/drain bottom junction capacitance grading coefficient - parameter real PBSW = 1.0; // Source/drain sidewall junction capacitance built in potential - parameter real MJSW = 0.33; // Source/drain sidewall junction capacitance grading coefficient - parameter real PBSWG = 1.0; // = PBSW Source/drain (gate side) sidewall junction capacitance built in potential - parameter real MJSWG = 0.33; // = MJSW Source/drain (gate side) sidewall junction capacitance grading coefficient - parameter real CJ = 5.0E-4; // Source/drain bottom junction capacitance per unit area - parameter real VFBCV = -1.0; // Flat Band Voltage parameter for capmod=0 only - parameter real VFB = -99.0; // Flat Band Voltage - parameter real CJSW = 5.0E-10; // Source/drain sidewall junction capacitance per unit periphery - parameter real CJSWG = 5.0e-10; // = CJSW Source/drain (gate side) sidewall junction capacitance per unit width - parameter real TPB = 0.0; // Temperature coefficient of pb - parameter real TCJ = 0.0; // Temperature coefficient of cj - parameter real TPBSW = 0.0; // Temperature coefficient of pbsw - parameter real TCJSW = 0.0; // Temperature coefficient of cjsw - parameter real TPBSWG = 0.0; // Temperature coefficient of pbswg - parameter real TCJSWG = 0.0; // Temperature coefficient of cjswg - parameter real ACDE = 1.0; // Exponential coefficient for finite charge thickness - parameter real MOIN = 15.0; // Coefficient for gate-bias dependent surface potential - parameter real NOFF = 1.0; // C-V turn-on/off parameter - parameter real VOFFCV = 0.0; // C-V lateral-shift parameter - parameter real LINT = 0.0; // Length reduction parameter - parameter real LL = 0.0; // Length reduction parameter - parameter real LLC = 0.0; // = LL Length reduction parameter for CV - parameter real LLN = 1.0; // Length reduction parameter - parameter real LW = 0.0; // Length reduction parameter - parameter real LWC = 0.0; // = LW Length reduction parameter for CV - parameter real LWN = 1.0; // Length reduction parameter - parameter real LWL = 0.0; // Length reduction parameter - parameter real LWLC = 0.0; // = LWL Length reduction parameter for CV - parameter real LMIN = 0.0; // Minimum length for the model - parameter real LMAX = 1.0; // Maximum length for the model - parameter real WR = 1.0; // Width dependence of rds - parameter real WINT = 0.0; // Width reduction parameter - parameter real DWG = 0.0; // Width reduction parameter - parameter real DWB = 0.0; // Width reduction parameter - parameter real WL = 0.0; // Width reduction parameter - parameter real WLC = 0.0; // = WL Width reduction parameter for CV - parameter real WLN = 1.0; // Width reduction parameter - parameter real WW = 0.0; // Width reduction parameter - parameter real WWC = 0.0; // = WW Width reduction parameter for CV - parameter real WWN = 1.0; // Width reduction parameter - parameter real WWL = 0.0; // Width reduction parameter - parameter real WWLC = 0.0; // = WWL Width reduction parameter for CV - parameter real WMIN = 0.0; // Minimum width for the model - parameter real WMAX = 1.0; // Maximum width for the model - parameter real B0 = 0.0; // Abulk narrow width parameter - parameter real B1 = 0.0; // Abulk narrow width parameter - parameter real CGSL = 0.0; // New C-V model parameter - parameter real CGDL = 0.0; // New C-V model parameter - parameter real CKAPPA = 0.6; // New C-V model parameter - parameter real CF = -99.0; // Fringe capacitance parameter - parameter real CLC = 0.1e-6; // Vdsat parameter for C-V model - parameter real CLE = 0.6; // Vdsat parameter for C-V model - parameter real DWC = 0.0; // = WINTDelta W for C-V model - parameter real DLC = -99.0; // Delta L for C-V model - parameter real ALPHA0 = 0.0; // substrate current model parameter - parameter real ALPHA1 = 0.0; // substrate current model parameter - parameter real BETA0 = 30.0; // substrate current model parameter - parameter real IJTH = 0.1; // Diode limiting current - - /*** Length dependance model parameters ***/ - parameter real LCDSC = 0.0; // Length dependence of cdsc - parameter real LCDSCB = 0.0; // Length dependence of cdscb - parameter real LCDSCD = 0.0; // Length dependence of cdscd - parameter real LCIT = 0.0; // Length dependence of cit - parameter real LNFACTOR = 0.0; // Length dependence of nfactor - parameter real LXJ = 0.0; // Length dependence of xj - parameter real LVSAT = 0.0; // Length dependence of vsat - parameter real LAT = 0.0; // Length dependence of at - parameter real LA0 = 0.0; // Length dependence of a0 - parameter real LAGS = 0.0; // Length dependence of ags - parameter real LA1 = 0.0; // Length dependence of a1 - parameter real LA2 = 0.0; // Length dependence of a2 - parameter real LKETA = 0.0; // Length dependence of keta - parameter real LNSUB = 0.0; // Length dependence of nsub - parameter real LNCH = 0.0; // Length dependence of nch - parameter real LNGATE = 0.0; // Length dependence of ngate - parameter real LGAMMA1 = -99.0; // Length dependence of gamma1 - parameter real LGAMMA2 = -99.0; // Length dependence of gamma2 - parameter real LVBX = -99.0; // Length dependence of vbx - parameter real LVBM = 0.0; // Length dependence of vbm - parameter real LXT = 0.0; // Length dependence of xt - parameter real LK1 = -99.0; // Length dependence of k1 - parameter real LKT1 = 0.0; // Length dependence of kt1 - parameter real LKT1L = 0.0; // Length dependence of kt1l - parameter real LKT2 = 0.0; // Length dependence of kt2 - parameter real LK2 = -99.0; // Length dependence of k2 - parameter real LK3 = 0.0; // Length dependence of k3 - parameter real LK3B = 0.0; // Length dependence of k3b - parameter real LW0 = 0.0; // Length dependence of w0 - parameter real LNLX = 0.0; // Length dependence of nlx - parameter real LDVT0 = 0.0; // Length dependence of dvt0 - parameter real LDVT1 = 0.0; // Length dependence of dvt1 - parameter real LDVT2 = 0.0; // Length dependence of dvt2 - parameter real LDVT0W = 0.0; // Length dependence of dvt0w - parameter real LDVT1W = 0.0; // Length dependence of dvt1w - parameter real LDVT2W = 0.0; // Length dependence of dvt2w - parameter real LDROUT = 0.0; // Length dependence of drout - parameter real LDSUB = 0.0; // Length dependence of dsub - parameter real LVTH0 = 0.0; // Length dependence of vto - parameter real LVTHO = 0.0; // Length dependence of vto - parameter real LUA = 0.0; // Length dependence of ua - parameter real LUA1 = 0.0; // Length dependence of ua1 - parameter real LUB = 0.0; // Length dependence of ub - parameter real LUB1 = 0.0; // Length dependence of ub1 - parameter real LUC = 0.0; // Length dependence of uc - parameter real LUC1 = 0.0; // Length dependence of uc1 - parameter real LU0 = 0.0; // Length dependence of u0 - parameter real LUTE = 0.0; // Length dependence of ute - parameter real LVOFF = 0.0; // Length dependence of voff - parameter real LELM = 0.0; // Length dependence of elm - parameter real LDELTA = 0.0; // Length dependence of delta - parameter real LRDSW = 0.0; // Length dependence of rdsw - parameter real LPRWG = 0.0; // Length dependence of prwg - parameter real LPRWB = 0.0; // Length dependence of prwb - parameter real LPRT = 0.0; // Length dependence of prt - parameter real LETA0 = 0.0; // Length dependence of eta0 - parameter real LETAB = 0.0; // Length dependence of etab - parameter real LPCLM = 0.0; // Length dependence of pclm - parameter real LPDIBLC1 = 0.0; // Length dependence of pdiblc1 - parameter real LPDIBLC2 = 0.0; // Length dependence of pdiblc2 - parameter real LPDIBLCB = 0.0; // Length dependence of pdiblcb - parameter real LPSCBE1 = 0.0; // Length dependence of pscbe1 - parameter real LPSCBE2 = 0.0; // Length dependence of pscbe2 - parameter real LPVAG = 0.0; // Length dependence of pvag - parameter real LWR = 0.0; // Length dependence of wr - parameter real LDWG = 0.0; // Length dependence of dwg - parameter real LDWB = 0.0; // Length dependence of dwb - parameter real LB0 = 0.0; // Length dependence of b0 - parameter real LB1 = 0.0; // Length dependence of b1 - parameter real LCGSL = 0.0; // Length dependence of cgsl - parameter real LCGDL = 0.0; // Length dependence of cgdl - parameter real LCKAPPA = 0.0; // Length dependence of ckappa - parameter real LCF = 0.0; // Length dependence of cf - parameter real LCLC = 0.0; // Length dependence of clc - parameter real LCLE = 0.0; // Length dependence of cle - parameter real LALPHA0 = 0.0; // Length dependence of alpha0 - parameter real LALPHA1 = 0.0; // Length dependence of alpha1 - parameter real LBETA0 = 0.0; // Length dependence of beta0 - parameter real LVFBCV = 0.0; // Length dependence of vfbcv - parameter real LVFB = 0.0; // Length dependence of vfb - parameter real LACDE = 0.0; // Length dependence of acde - parameter real LMOIN = 0.0; // Length dependence of moin - parameter real LNOFF = 0.0; // Length dependence of noff - parameter real LVOFFCV = 0.0; // Length dependence of voffcv - - parameter real WCDSC = 0.0; // Width dependence of cdsc - parameter real WCDSCB = 0.0; // Width dependence of cdscb - parameter real WCDSCD = 0.0; // Width dependence of cdscd - parameter real WCIT = 0.0; // Width dependence of cit - parameter real WNFACTOR = 0.0; // Width dependence of nfactor - parameter real WXJ = 0.0; // Width dependence of xj - parameter real WVSAT = 0.0; // Width dependence of vsat - parameter real WAT = 0.0; // Width dependence of at - parameter real WA0 = 0.0; // Width dependence of a0 - parameter real WAGS = 0.0; // Width dependence of ags - parameter real WA1 = 0.0; // Width dependence of a1 - parameter real WA2 = 0.0; // Width dependence of a2 - parameter real WKETA = 0.0; // Width dependence of keta - parameter real WNSUB = 0.0; // Width dependence of nsub - parameter real WNCH = 0.0; // Width dependence of nch - parameter real WNGATE = 0.0; // Width dependence of ngate - parameter real WGAMMA1 = -99.0; // Width dependence of gamma1 - parameter real WGAMMA2 = -99.0; // Width dependence of gamma2 - parameter real WVBX = -99.0; // Width dependence of vbx - parameter real WVBM = 0.0; // Width dependence of vbm - parameter real WXT = 0.0; // Width dependence of xt - parameter real WK1 = -99.0; // Width dependence of k1 - parameter real WKT1 = 0.0; // Width dependence of kt1 - parameter real WKT1L = 0.0; // Width dependence of kt1l - parameter real WKT2 = 0.0; // Width dependence of kt2 - parameter real WK2 = -99.0; // Width dependence of k2 - parameter real WK3 = 0.0; // Width dependence of k3 - parameter real WK3B = 0.0; // Width dependence of k3b - parameter real WW0 = 0.0; // Width dependence of w0 - parameter real WNLX = 0.0; // Width dependence of nlx - parameter real WDVT0 = 0.0; // Width dependence of dvt0 - parameter real WDVT1 = 0.0; // Width dependence of dvt1 - parameter real WDVT2 = 0.0; // Width dependence of dvt2 - parameter real WDVT0W = 0.0; // Width dependence of dvt0w - parameter real WDVT1W = 0.0; // Width dependence of dvt1w - parameter real WDVT2W = 0.0; // Width dependence of dvt2w - parameter real WDROUT = 0.0; // Width dependence of drout - parameter real WDSUB = 0.0; // Width dependence of dsub - parameter real WVTH0 = 0.0; // Width dependence of vto - parameter real WVTHO = 0.0; // Width dependence of vto - parameter real WUA = 0.0; // Width dependence of ua - parameter real WUA1 = 0.0; // Width dependence of ua1 - parameter real WUB = 0.0; // Width dependence of ub - parameter real WUB1 = 0.0; // Width dependence of ub1 - parameter real WUC = 0.0; // Width dependence of uc - parameter real WUC1 = 0.0; // Width dependence of uc1 - parameter real WU0 = 0.0; // Width dependence of u0 - parameter real WUTE = 0.0; // Width dependence of ute - parameter real WVOFF = 0.0; // Width dependence of voff - parameter real WELM = 0.0; // Width dependence of elm - parameter real WDELTA = 0.0; // Width dependence of delta - parameter real WRDSW = 0.0; // Width dependence of rdsw - parameter real WPRWG = 0.0; // Width dependence of prwg - parameter real WPRWB = 0.0; // Width dependence of prwb - parameter real WPRT = 0.0; // Width dependence of prt - parameter real WETA0 = 0.0; // Width dependence of eta0 - parameter real WETAB = 0.0; // Width dependence of etab - parameter real WPCLM = 0.0; // Width dependence of pclm - parameter real WPDIBLC1 = 0.0; // Width dependence of pdiblc1 - parameter real WPDIBLC2 = 0.0; // Width dependence of pdiblc2 - parameter real WPDIBLCB = 0.0; // Width dependence of pdiblcb - parameter real WPSCBE1 = 0.0; // Width dependence of pscbe1 - parameter real WPSCBE2 = 0.0; // Width dependence of pscbe2 - parameter real WPVAG = 0.0; // Width dependence of pvag - parameter real WWR = 0.0; // Width dependence of wr - parameter real WDWG = 0.0; // Width dependence of dwg - parameter real WDWB = 0.0; // Width dependence of dwb - parameter real WB0 = 0.0; // Width dependence of b0 - parameter real WB1 = 0.0; // Width dependence of b1 - parameter real WCGSL = 0.0; // Width dependence of cgsl - parameter real WCGDL = 0.0; // Width dependence of cgdl - parameter real WCKAPPA = 0.0; // Width dependence of ckappa - parameter real WCF = 0.0; // Width dependence of cf - parameter real WCLC = 0.0; // Width dependence of clc - parameter real WCLE = 0.0; // Width dependence of cle - parameter real WALPHA0 = 0.0; // Width dependence of alpha0 - parameter real WALPHA1 = 0.0; // Width dependence of alpha1 - parameter real WBETA0 = 0.0; // Width dependence of beta0 - parameter real WVFBCV = 0.0; // Width dependence of vfbcv - parameter real WVFB = 0.0; // Width dependence of vfb - parameter real WACDE = 0.0; // Width dependence of acde - parameter real WMOIN = 0.0; // Width dependence of moin - parameter real WNOFF = 0.0; // Width dependence of noff - parameter real WVOFFCV = 0.0; // Width dependence of voffcv - - parameter real PCDSC = 0.0; // Cross-term dependence of cdsc - parameter real PCDSCB = 0.0; // Cross-term dependence of cdscb - parameter real PCDSCD = 0.0; // Cross-term dependence of cdscd - parameter real PCIT = 0.0; // Cross-term dependence of cit - parameter real PNFACTOR = 0.0; // Cross-term dependence of nfactor - parameter real PXJ = 0.0; // Cross-term dependence of xj - parameter real PVSAT = 0.0; // Cross-term dependence of vsat - parameter real PAT = 0.0; // Cross-term dependence of at - parameter real PA0 = 0.0; // Cross-term dependence of a0 - parameter real PAGS = 0.0; // Cross-term dependence of ags - parameter real PA1 = 0.0; // Cross-term dependence of a1 - parameter real PA2 = 0.0; // Cross-term dependence of a2 - parameter real PKETA = 0.0; // Cross-term dependence of keta - parameter real PNSUB = 0.0; // Cross-term dependence of nsub - parameter real PNCH = 0.0; // Cross-term dependence of nch - parameter real PNGATE = 0.0; // Cross-term dependence of ngate - parameter real PGAMMA1 = -99.0; // Cross-term dependence of gamma1 - parameter real PGAMMA2 = -99.0; // Cross-term dependence of gamma2 - parameter real PVBX = -99.0; // Cross-term dependence of vbx - parameter real PVBM = 0.0; // Cross-term dependence of vbm - parameter real PXT = 0.0; // Cross-term dependence of xt - parameter real PK1 = -99.0; // Cross-term dependence of k1 - parameter real PKT1 = 0.0; // Cross-term dependence of kt1 - parameter real PKT1L = 0.0; // Cross-term dependence of kt1l - parameter real PKT2 = 0.0; // Cross-term dependence of kt2 - parameter real PK2 = -99.0; // Cross-term dependence of k2 - parameter real PK3 = 0.0; // Cross-term dependence of k3 - parameter real PK3B = 0.0; // Cross-term dependence of k3b - parameter real PW0 = 0.0; // Cross-term dependence of w0 - parameter real PNLX = 0.0; // Cross-term dependence of nlx - parameter real PDVT0 = 0.0; // Cross-term dependence of dvt0 - parameter real PDVT1 = 0.0; // Cross-term dependence of dvt1 - parameter real PDVT2 = 0.0; // Cross-term dependence of dvt2 - parameter real PDVT0W = 0.0; // Cross-term dependence of dvt0w - parameter real PDVT1W = 0.0; // Cross-term dependence of dvt1w - parameter real PDVT2W = 0.0; // Cross-term dependence of dvt2w - parameter real PDROUT = 0.0; // Cross-term dependence of drout - parameter real PDSUB = 0.0; // Cross-term dependence of dsub - parameter real PVTH0 = 0.0; // Cross-term dependence of vto - parameter real PVTHO = 0.0; // Cross-term dependence of vto - parameter real PUA = 0.0; // Cross-term dependence of ua - parameter real PUA1 = 0.0; // Cross-term dependence of ua1 - parameter real PUB = 0.0; // Cross-term dependence of ub - parameter real PUB1 = 0.0; // Cross-term dependence of ub1 - parameter real PUC = 0.0; // Cross-term dependence of uc - parameter real PUC1 = 0.0; // Cross-term dependence of uc1 - parameter real PU0 = 0.0; // Cross-term dependence of u0 - parameter real PUTE = 0.0; // Cross-term dependence of ute - parameter real PVOFF = 0.0; // Cross-term dependence of voff - parameter real PELM = 0.0; // Cross-term dependence of elm - parameter real PDELTA = 0.0; // Cross-term dependence of delta - parameter real PRDSW = 0.0; // Cross-term dependence of rdsw - parameter real PPRWG = 0.0; // Cross-term dependence of prwg - parameter real PPRWB = 0.0; // Cross-term dependence of prwb - parameter real PPRT = 0.0; // Cross-term dependence of prt - parameter real PETA0 = 0.0; // Cross-term dependence of eta0 - parameter real PETAB = 0.0; // Cross-term dependence of etab - parameter real PPCLM = 0.0; // Cross-term dependence of pclm - parameter real PPDIBLC1 = 0.0; // Cross-term dependence of pdiblc1 - parameter real PPDIBLC2 = 0.0; // Cross-term dependence of pdiblc2 - parameter real PPDIBLCB = 0.0; // Cross-term dependence of pdiblcb - parameter real PPSCBE1 = 0.0; // Cross-term dependence of pscbe1 - parameter real PPSCBE2 = 0.0; // Cross-term dependence of pscbe2 - parameter real PPVAG = 0.0; // Cross-term dependence of pvag - parameter real PWR = 0.0; // Cross-term dependence of wr - parameter real PDWG = 0.0; // Cross-term dependence of dwg - parameter real PDWB = 0.0; // Cross-term dependence of dwb - parameter real PB0 = 0.0; // Cross-term dependence of b0 - parameter real PB1 = 0.0; // Cross-term dependence of b1 - parameter real PCGSL = 0.0; // Cross-term dependence of cgsl - parameter real PCGDL = 0.0; // Cross-term dependence of cgdl - parameter real PCKAPPA = 0.0; // Cross-term dependence of ckappa - parameter real PCF = 0.0; // Cross-term dependence of cf - parameter real PCLC = 0.0; // Cross-term dependence of clc - parameter real PCLE = 0.0; // Cross-term dependence of cle - parameter real PALPHA0 = 0.0; // Cross-term dependence of alpha0 - parameter real PALPHA1 = 0.0; // Cross-term dependence of alpha1 - parameter real PBETA0 = 0.0; // Cross-term dependence of beta0 - parameter real PVFBCV = 0.0; // Cross-term dependence of vfbcv - parameter real PVFB = 0.0; // Cross-term dependence of vfb - parameter real PACDE = 0.0; // Cross-term dependence of acde - parameter real PMOIN = 0.0; // Cross-term dependence of moin - parameter real PNOFF = 0.0; // Cross-term dependence of noff - parameter real PVOFFCV = 0.0; // Cross-term dependence of voffcv -// -// Noise added to Verilog-A BSIM 3 code - NOIMOD = 4 only implemented, MEB. - parameter real KF = 0.0; // Proportional constant in Flicker noise. - parameter real AF = 1.0; // Current exponent in flicker noise. - parameter real EF = 1.0; // Frequency exponent in flicker noise. - - real TYPE; - - integer Fatal_Flag; - - real tox, cox, vth0, nch, ngate, uc, uc1, u0, tnom; - real dlcGiven, cgso, cgdo, cgbo; - real pdibl1, pdibl2, pdiblb; - - real jctSatCurDensity; - real jctSidewallSatCurDensity; - real bulkJctPotential; - real jctEmissionCoeff; - real jctTempExponent; - real bulkJctBotGradingCoeff; - real sidewallJctPotential; - real bulkJctSideGradingCoeff; - real GatesidewallJctPotential; - real bulkJctGateSideGradingCoeff; - real unitAreaJctCap; - real unitAreaTempJctCap; - real unitLengthSidewallJctCap; - real unitLengthSidewallTempJctCap; - real unitLengthGateSidewallJctCap; - real unitLengthGateSidewallTempJctCap; - - - real cf; - real lnpeak, lngate, lvth0; - real lpdibl1, lpdibl2, lpdiblb; - real wnpeak, wngate, wvth0; - real wpdibl1, wpdibl2, wpdiblb; - real pnpeak, pngate, pvth0; - real ppdibl1, ppdibl2, ppdiblb; - - real Temp, Tnom, TRatio, delTemp; - real factor1, Vtm0, Eg0, ni, vtm, Eg; - real T_0, T1, T2, T3, T4, T5, T6, T7, T8, T9, T10; // Changed T0 to T_0 : Using T0 causes ADMS 2.30 compile erors, MEB. - real jctTempSatCurDensity, jctSidewallTempSatCurDensity; - real PhiB, PhiBSW, PhiBSWG; - - real Ldrn, Wdrn; - real tmp, tmp1, tmp2, tmp3, tmp4; - real dl, dlc, dw, dwc, leff, weff; - real leffCV, weffCV; - real Inv_L, Inv_W, Inv_LW; - - real cdsc, cdscb, cdscd, cit, nfactor, xj; - real vsat, at, a0, ags, a1, a2, keta, nsub; - real npeak; - real gamma1, lgamma1, wgamma1, pgamma1, gamma1Given; - real gamma2, lgamma2, wgamma2, pgamma2, gamma2Given; - real vbx, lvbx, wvbx, pvbx, vbxGiven; - real vfb, vfbGiven; - real k1, lk1, wk1, pk1, k1Given; - real k2, lk2, wk2, pk2, k2Given; - - real vbm, xt, kt1, kt1l, kt2, k3; - real k3b, w0, nlx, dvt0, dvt1, dvt2, dvt0w, dvt1w, dvt2w, drout; - real dsub, ua, ua1, ub, ub1, ute; - real voff, delta, rdsw, prwg, prwb, prt, eta0, etab, pclm; - real pscbe1, pscbe2, pvag, wr, dwg, dwb, b0, b1; - real alpha0, alpha1, beta0; - real elm, cgsl, cgdl, ckappa, clc, cle, vfbcv, acde, moin, noff_param, Noff2, voffcv_param; - - real abulkCVfactor, u0temp, vsattemp, rds0, tconst; - real phi, sqrtPhi, phis3, Xdep0, litl, vbi, cdep0, ldeb; - real nsubGiven, xtGiven, npeakGiven, vth0Given; - real vbsc, k1ox, k2ox, theta0vb0, thetaRout, vfbzb; - real sheetResistance; - - real sourceArea, drainArea; - real sourceSquares, drainSquares; - real sourcePerimeter, drainPerimeter; - real SourceSatCurrent, DrainSatCurrent; - real sourceConductance, drainConductance; - - real Nvtm, vjsm, vjdm, IsEvjsm, IsEvjdm; - - real vbs, vgs, vds; - real vbd, vgd, vgb; - - // diode equations variables - real gbs, cbs, evbs; - real gbd, cbd, evbd; - - real mode, Vds, Vgs, Vbs; - real Vbseff, Phis, sqrtPhis, Xdep, V0, lt1, ltw; - real Leff, Vtm, Theta0, thetavth, Delt_vth; - real temp, TempRatio, dDIBL_Sft_dVd, DIBL_Sft, Vth; - - real n, Vgs_eff, Vgst, VgstNVt, ExpArg; - real Vgsteff, ExpVgst; - real Weff, Rds, Abulk0, Abulk, Denomi, ueff; - real WVCox, WVCoxRds, Esat, EsatL, Lambda, Vgst2Vtm, Vdsat, vdsat; - real Vdseff, Vasat, diffVds, VACLM, VADIBL, Va, VASCBE; - real CoxWovL, beta, fgche1, fgche2, gche, Idl; - real Idsa, Ids, Isub, cdrain, csub; - - // Depletion capacitance related variables - real czbd, czbs; - real czbdswg, czbdsw; - real czbsswg, czbssw; - real mj, mjsw, mjswg; - real qbs, capbs; - real qbd, capbd; - real arg, sarg; - - - // Charge model related variables - real qgate, qdrn, qsrc, qbulk; - real Qgate, Qdrn, Qsrc, Qbulk; - - real Vfb, CoxWL, Arg1, qinv, Qac0, Vfbeff; - real One_Third_CoxWL, Two_Third_CoxWL, AbulkCV; - real VdsatCV, Alphaz, VbseffCV, Qsub0, qinoi, VdseffCV; - real Cox, V3, Tox, Tox2, LINK, V4, Coxeff, CoxWLcen, Tcen, Ccen; - real DeltaPhi; - - // extrinsic capacitance related variables - real cgso_param, cgdo_param, cgbo_param; - real qgso, qgdo; - real qgs, qgd, qgb; - - // noise data: added by M.E Brinson for Qucs ADMS 2.30 port. - real fourkt, leffx2; - - // NQS model -`ifdef NQSMOD - real sxpart, dxpart; - real qcheq , qcdump, qdef, gtau_drift, gtau_diff, ScalingFactor, gtau; - real cqcheq, cqdef; -`endif - - real cqgate, cqdrn, cqbulk; - - analog - begin - - @(initial_step) - begin - tox = TOX; - - cox = 3.453133e-11 / tox; - TYPE = -1.0; // TYPE = -1.0 for pMOS device, MEB. - -`ifdef NQSMOD - ScalingFactor = 1.0e-9; -`endif - - if (NSUB == -99.0) - begin - nsub = 6.0e16; - nsubGiven = 0; - end - else - begin - nsub = NSUB; - nsubGiven = 1; - end - - if (XT == -99.0) - begin - xt = 1.55e-7; - xtGiven = 0; - end - else - begin - xt = XT; - xtGiven = 1; - end - - if (NCH == -99.0) - begin - npeak = 1.7e17; - npeakGiven = 0; - end - else - begin - npeak = NCH; - npeakGiven = 1; - end - - if (GAMMA1 == -99.0) - begin - gamma1 = 0.0; - gamma1Given = 0; - end - else - begin - gamma1 = GAMMA1; - gamma1Given = 1; - end - - if (LGAMMA1 == -99.0) - lgamma1 = 0.0; - else - lgamma1 = LGAMMA1; - - if (WGAMMA1 == -99.0) - wgamma1 = 0.0; - else - wgamma1 = WGAMMA1; - - if (PGAMMA1 == -99.0) - pgamma1 = 0.0; - else - pgamma1 = PGAMMA1; - - if (GAMMA2 == -99.0) - begin - gamma2 = 0.0; - gamma2Given = 0; - end - else - begin - gamma2 = GAMMA2; - gamma2Given = 1; - end - - if (LGAMMA2 == -99.0) - lgamma2 = 0.0; - else - lgamma2 = LGAMMA2; - - if (WGAMMA2 == -99.0) - wgamma2 = 0.0; - else - wgamma2 = WGAMMA2; - - if (PGAMMA2 == -99.0) - pgamma2 = 0.0; - else - pgamma2 = PGAMMA2; - - if (VBX == -99.0) - begin - vbx = 0.0; - vbxGiven = 0.0; - end - else - begin - vbx = VBX; - vbxGiven = 1; - end - - if (LVBX == -99.0) - lvbx = 0.0; - else - lvbx = LVBX; - - if (WVBX == -99.0) - wvbx = 0.0; - else - wvbx = WVBX; - - if (PVBX == -99.0) - pvbx = 0.0; - else - pvbx = PVBX; - - if (VFB == -99.0) - begin - vfb = 0.0; - vfbGiven = 0.0; - end - else - begin - vfb = VFB; - vfbGiven = 1.0; - end - - if (K1 == -99.0) - begin - k1 = 0.0; - k1Given = 0.0; - end - else - begin - k1 = K1; - k1Given = 1.0; - end - - if (LK1 == -99.0) - lk1 = 0.0; - else - lk1 = LK1; - - if (WK1 == -99.0) - wk1 = 0.0; - else - wk1 = WK1; - - if (PK1 == -99.0) - pk1 = 0.0; - else - pk1 = PK1; - - if (K2 == -99.0) - begin - k2 = 0.0; - k2Given = 0.0; - end - else - begin - k2 = K2; - k2Given = 1.0; - end - - if (LK2 == -99.0) - lk2 = 0.0; - else - lk2 = LK2; - - if (WK2 == -99.0) - wk2 = 0.0; - else - wk2 = WK2; - - if (PK2 == -99.0) // Changed to correct error, MEB. -// wk2 = 0.0; - pk2 = 0.0; - else -// wk2 = WK2; - pk2 = PK2; - - if (NCH > 1.0e20) - npeak = npeak * 1.0e-6; - else - npeak = npeak; - - if (NGATE > 1.0e23) - ngate = NGATE * 1.0e-6; - else - ngate = NGATE; - - // calculating ungiven parameters - if ( (VTHO == -99.0) && (VTH0 == -99.0) ) - begin - vth0 = (TYPE > 0.0) ? 0.7 : -0.7; - vth0Given = 0; - end - else - begin - vth0Given = 1; -// if (VTH0 == -99) // Error changed MEB. - if (VTH0 != -99) - vth0 = VTHO; -// if (VTHO == -99) // Error changed MEB. - if (VTHO != -99) - vth0 = VTH0; - end - - if (UC == -99.0 ) - uc = (MOBMOD == 3) ? -0.0465 : -0.0465e-9; - else - uc = UC; - - if (UC1 == -99.0) - uc1 = (MOBMOD == 3) ? -0.056 : -0.056e-9; - else - uc1 = UC1; - - if (U0 == -99.0) - u0 = (TYPE == 1) ? 0.067 : 0.025; - else - u0 = U0; - - if (TNOM == -99.0) - tnom = 300.15; - else - tnom = TNOM + 273.15; - - if (DLC == -99.0) - begin - dlcGiven = 0; - dlc = LINT; - end - else - begin - dlcGiven = 1; - dlc = DLC; - end - - if (CGSO == -99.0) - if ( dlcGiven && (dlc > 0.0) ) - cgso_param = dlc * cox - CGSL; - else - cgso_param = 0.6 * XJ * cox; - else - cgso_param = CGSO; - - if (CGDO == -99.0) - if ( dlcGiven && (dlc > 0.0) ) - cgdo_param = dlc * cox - CGDL; - else - cgdo_param = 0.6 * XJ * cox; - else - cgdo_param = CGDO; - - if (CGBO == -99.0) - cgbo_param = 2.0 * DWC * cox; - else - cgbo_param = CGBO; - - pdibl1 = PDIBLC1; - pdibl2 = PDIBLC2; - pdiblb = PDIBLCB; - - jctSatCurDensity = JS; - jctSidewallSatCurDensity = JSW; - bulkJctPotential = PB; - jctEmissionCoeff = NJ; - jctTempExponent = XTI; - bulkJctBotGradingCoeff = MJ; - sidewallJctPotential = PBSW; - bulkJctSideGradingCoeff = MJSW; - GatesidewallJctPotential = PBSWG; - bulkJctGateSideGradingCoeff = MJSWG; - unitAreaJctCap = CJ; - unitLengthSidewallJctCap = CJSW; - unitLengthGateSidewallJctCap = CJSWG; - - sheetResistance = RSH; - drainSquares = NRD; - sourceSquares = NRS; - drainArea = AD; - sourceArea = AS; - drainPerimeter = PD; - sourcePerimeter = PS; - - if (CF == -99.0) - cf = 2.0 * `EPSOX / `PI * ln(1.0 + 0.4e-6 / tox); - else - cf = CF; - - // Channel length dependance parameters - if (LNCH > 1.0e20) - lnpeak = LNCH * 1.0e-6; - else - lnpeak = LNCH; - - if (LNGATE > 1.0e23) - lngate = LNGATE * 1.0e-6; - else - lngate = LNGATE; - - if (LVTH0 != 0.0) - lvth0 = LVTH0; - if (LVTHO != 0.0) - lvth0 = LVTHO; - - lpdibl1 = LPDIBLC1; - lpdibl2 = LPDIBLC2; - lpdiblb = LPDIBLCB; - - // Channel width dependance parameters - if (WNCH > 1.0e20) - wnpeak = WNCH * 1.0e-6; - else - wnpeak = WNCH; - - if (WNGATE > 1.0e23) - wngate = WNGATE * 1.0e-6; - else - wngate = WNGATE; - - if (WVTH0 != 0.0) - wvth0 = WVTH0; - if (WVTHO != 0.0) - wvth0 = WVTHO; - - wpdibl1 = WPDIBLC1; - wpdibl2 = WPDIBLC2; - wpdiblb = WPDIBLCB; - - // Cross-term dependence parameters - if (PNCH > 1.0e20) - pnpeak = PNCH * 1.0e-6; - else - pnpeak = PNCH; - - if (PNGATE > 1.0e20) - pngate = PNGATE * 1.0e-6; - else - pngate = PNGATE; - - if (PVTH0 != 0.0) - pvth0 = PVTH0; - if (PVTHO != 0.0) - pvth0 = PVTHO; - - ppdibl1 = PPDIBLC1; - ppdibl2 = PPDIBLC2; - ppdiblb = PPDIBLCB; - - if (bulkJctPotential < 0.1) - begin - bulkJctPotential = 0.1; - $strobe ("Given pb is less than 0.1. Pb is set to 0.1."); - end - if (sidewallJctPotential < 0.1) - begin - sidewallJctPotential = 0.1; - $strobe ("Given pbsw is less than 0.1. Pbsw is set to 0.1."); - end - if (GatesidewallJctPotential < 0.1) - begin - GatesidewallJctPotential = 0.1; - $strobe ("Given pbswg is less than 0.1. Pbswg is set to 0.1."); - end - - Temp = $temperature; - Tnom = tnom; - TRatio = Temp / Tnom; - - factor1 = sqrt(`EPSSI / `EPSOX * tox); - - Vtm0 = `KboQ * Tnom; - Eg0 = 1.16 - 7.02e-4 * Tnom * Tnom / (Tnom + 1108.0); - ni = 1.45e10 * (Tnom / 300.15) * sqrt(Tnom / 300.15) * exp(21.5565981 - Eg0 / (2.0 * Vtm0)); - - vtm = `KboQ * Temp; - Eg = 1.16 - 7.02e-4 * Temp * Temp / (Temp + 1108.0); - - if (Temp != Tnom) - begin - T_0 = Eg0 / Vtm0 - Eg / vtm + jctTempExponent * ln(Temp / Tnom); - T1 = exp(T_0 / jctEmissionCoeff); - - jctTempSatCurDensity = jctSatCurDensity * T1; - jctSidewallTempSatCurDensity = jctSidewallSatCurDensity * T1; - end - else - begin - jctTempSatCurDensity = jctSatCurDensity; - jctSidewallTempSatCurDensity = jctSidewallSatCurDensity; - end - - if (jctTempSatCurDensity < 0.0) - jctTempSatCurDensity = 0.0; - if (jctSidewallTempSatCurDensity < 0.0) - jctSidewallTempSatCurDensity = 0.0; - - /* Temperature dependence of D/B and S/B diode capacitance */ - delTemp = $temperature - tnom; - T_0 = TCJ * delTemp; - - if (T_0 >= -1.0) - begin - if (VERSION == 3.24) - unitAreaTempJctCap = unitAreaJctCap * (1.0 + T_0); - else - unitAreaJctCap = unitAreaJctCap * (1.0 + T_0); - end - else if (unitAreaJctCap > 0.0) - begin - if (VERSION == 3.24) - unitAreaTempJctCap = 0.0; - else - unitAreaJctCap = 0.0; - $strobe ("Temperature effect has caused cj to be negative. Cj is clamped to zero."); - end - - T_0 = TCJSW * delTemp; - if (T_0 >= -1.0) - begin - if (VERSION == 3.24) - unitLengthSidewallTempJctCap = unitLengthSidewallJctCap * (1.0 + T_0); - else - unitLengthSidewallJctCap = unitLengthSidewallJctCap * (1.0 + T_0); - end - else if (unitLengthSidewallJctCap > 0.0) - begin - if (VERSION == 3.24) - unitLengthSidewallTempJctCap = 0.0; - else - unitLengthSidewallJctCap = 0.0; - $strobe ("Temperature effect has caused cjsw to be negative. Cjsw is clamped to zero."); - end - - T_0 = TCJSWG * delTemp; - if (T_0 >= -1.0) - begin - if (VERSION == 3.24) - unitLengthGateSidewallTempJctCap = unitLengthGateSidewallJctCap * (1.0 + T_0); - else - unitLengthGateSidewallJctCap = unitLengthGateSidewallJctCap * (1.0 + T_0); - end - else if (unitLengthGateSidewallJctCap > 0.0) - begin - if (VERSION == 3.24) - unitLengthGateSidewallTempJctCap = 0.0; - else - unitLengthGateSidewallJctCap = 0.0; - $strobe ("Temperature effect has caused cjswg to be negative. Cjswg is clamped to zero."); - end - - PhiB = bulkJctPotential - TPB * delTemp; - if (PhiB < 0.01) - begin - PhiB = 0.01; - $strobe ("Temperature effect has caused pb to be less than 0.01. Pb is clamped to 0.01."); - end - - PhiBSW = sidewallJctPotential - TPBSW * delTemp; - if (PhiBSW <= 0.01) - begin - PhiBSW = 0.01; - $strobe ("Temperature effect has caused pbsw to be less than 0.01. Pbsw is clamped to 0.01."); - end - - PhiBSWG = GatesidewallJctPotential - TPBSWG * delTemp; - if (PhiBSWG <= 0.01) - begin - PhiBSWG = 0.01; - $strobe ("Temperature effect has caused pbswg to be less than 0.01. Pbswg is clamped to 0.01."); - end - - /* End of junction capacitance */ - - /*** Effective channel length and width calculation ***/ - Ldrn = L; - Wdrn = W; - - T_0 = pow(Ldrn, LLN); - T1 = pow(Wdrn, LWN); - - tmp1 = LL / T_0 + LW / T1 + LWL / (T_0 * T1); - dl = LINT + tmp1; - - tmp2 = LLC / T_0 + LWC / T1 + LWLC / (T_0 * T1); - dlc = dlc + tmp2; - - T2 = pow(Ldrn, WLN); - T3 = pow(Wdrn, WWN); - - tmp1 = WL / T2 + WW / T3 + WWL / (T2 * T3); - dw = WINT + tmp1; - tmp2 = WLC / T2 + WWC / T3 + WWLC / (T2 * T3); - dwc = DWC + tmp2; - - leff = L - 2.0 * dl; - - if (leff <= 0.0) - begin - $strobe ("BSIM3: device %m: Effective channel length <= 0"); - $finish(1); - end - - weff = W - 2.0 * dw; - if (leff <= 0.0) - begin - $strobe ("BSIM3: device %m: Effective channel width <= 0"); - $finish(1); - end - - leffCV = L - 2.0 * dlc; - if (leffCV <= 0.0) - begin - $strobe ("BSIM3: device %m: Effective channel length for C-V <= 0"); - $finish(1); - end - - weffCV = W - 2.0 * dwc; - if (weffCV <= 0.0) - begin - $strobe ("BSIM3: device %m: Effective channel width for C-V <= 0"); - $finish(1); - end - - if (BINUNIT == 1) - begin - Inv_L = 1.0e-6 / leff; - Inv_W = 1.0e-6 / weff; - Inv_LW = 1.0e-12 / (leff * weff); - end - else - begin - Inv_L = 1.0 / leff; - Inv_W = 1.0 / weff; - Inv_LW = 1.0 / (leff * weff); - end - - cdsc = CDSC + LCDSC * Inv_L + WCDSC * Inv_W + PCDSC * Inv_LW; - cdscb = CDSCB + LCDSCB * Inv_L + WCDSCB * Inv_W + PCDSCB * Inv_LW; - cdscd = CDSCD + LCDSCD * Inv_L + WCDSCD * Inv_W + PCDSCD * Inv_LW; - - cit = CIT + LCIT * Inv_L + WCIT * Inv_W + PCIT * Inv_LW; - nfactor = NFACTOR + LNFACTOR * Inv_L + WNFACTOR * Inv_W + PNFACTOR * Inv_LW; - - xj = XJ + LXJ * Inv_L + WXJ * Inv_W + PXJ * Inv_LW; - vsat = VSAT + LVSAT * Inv_L + WVSAT * Inv_W + PVSAT * Inv_LW; - - at = AT + LAT * Inv_L + WAT * Inv_W + PAT * Inv_LW; - a0 = A0 + LA0 * Inv_L + WA0 * Inv_W + PA0 * Inv_LW; - - ags = AGS + LAGS * Inv_L + WAGS * Inv_W + PAGS * Inv_LW; - a1 = A1 + LA1 * Inv_L + WA1 * Inv_W + PA1 * Inv_LW; - a2 = A2 + LA2 * Inv_L + WA2 * Inv_W + PA2 * Inv_LW; - keta = KETA + LKETA * Inv_L + WKETA * Inv_W + PKETA * Inv_LW; - nsub = nsub + LNSUB * Inv_L + WNSUB * Inv_W + PNSUB * Inv_LW; - - npeak = npeak + lnpeak * Inv_L + wnpeak * Inv_W + pnpeak * Inv_LW; - ngate = ngate + lngate * Inv_L + wngate * Inv_W + pngate * Inv_LW; - - gamma1 = gamma1 + lgamma1 * Inv_L + wgamma1 * Inv_W + pgamma1 * Inv_LW; - gamma2 = gamma2 + lgamma2 * Inv_L + wgamma2 * Inv_W + pgamma2 * Inv_LW; - - vbx = vbx + lvbx * Inv_L + wvbx * Inv_W + pvbx * Inv_LW; - vbm = VBM + LVBM * Inv_L + WVBM * Inv_W + PVBM * Inv_LW; - xt = xt + LXT * Inv_L + WXT * Inv_W + PXT * Inv_LW; - vfb = vfb + LVFB * Inv_L + WVFB * Inv_W + PVFB * Inv_LW; - - k1 = k1 + lk1 * Inv_L + wk1 * Inv_W + pk1 * Inv_LW; - kt1 = KT1 + LKT1 * Inv_L + WKT1 * Inv_W + PKT1 * Inv_LW; - kt1l = KT1L + LKT1L * Inv_L + WKT1L * Inv_W + PKT1L * Inv_LW; - k2 = k2 + lk2 * Inv_L + wk2 * Inv_W + pk2 * Inv_LW; - kt2 = KT2 + LKT2 * Inv_L + WKT2 * Inv_W + PKT2 * Inv_LW; - k3 = K3 + LK3 * Inv_L + WK3 * Inv_W + PK3 * Inv_LW; - k3b = K3B + LK3B * Inv_L + WK3B * Inv_W + PK3B * Inv_LW; - - w0 = W0 + LW0 * Inv_L + WW0 * Inv_W + PW0 * Inv_LW; - nlx = NLX + LNLX * Inv_L + WNLX * Inv_W + PNLX * Inv_LW; - - dvt0 = DVT0 + LDVT0 * Inv_L + WDVT0 * Inv_W + PDVT0 * Inv_LW; - dvt1 = DVT1 + LDVT1 * Inv_L + WDVT1 * Inv_W + PDVT1 * Inv_LW; - dvt2 = DVT2 + LDVT2 * Inv_L + WDVT2 * Inv_W + PDVT2 * Inv_LW; - - dvt0w = DVT0W + LDVT0W * Inv_L + WDVT0W * Inv_W + PDVT0W * Inv_LW; - dvt1w = DVT1W + LDVT1W * Inv_L + WDVT1W * Inv_W + PDVT1W * Inv_LW; - dvt2w = DVT2W + LDVT2W * Inv_L + WDVT2W * Inv_W + PDVT2W * Inv_LW; - drout = DROUT + LDROUT * Inv_L + WDROUT * Inv_W + PDROUT * Inv_LW; - - dsub = DSUB + LDSUB * Inv_L + WDSUB * Inv_W + PDSUB * Inv_LW; - vth0 = vth0 + lvth0 * Inv_L + wvth0 * Inv_W + pvth0 * Inv_LW; - - ua = UA + LUA * Inv_L + WUA * Inv_W + PUA * Inv_LW; - ua1 = UA1 + LUA1 * Inv_L + WUA1 * Inv_W + PUA1 * Inv_LW; - ub = UB + LUB * Inv_L + WUB * Inv_W + PUB * Inv_LW; - ub1 = UB1 + LUB1 * Inv_L + WUB1 * Inv_W + PUB1 * Inv_LW; - uc = uc + LUC * Inv_L + WUC * Inv_W + PUC * Inv_LW; - uc1 = uc1 + LUC1 * Inv_L + WUC1 * Inv_W + PUC1 * Inv_LW; - u0 = u0 + LU0 * Inv_L + WU0 * Inv_W + PU0 * Inv_LW; - ute = UTE + LUTE * Inv_L + WUTE * Inv_W + PUTE * Inv_LW; - - voff = VOFF + LVOFF * Inv_L + WVOFF * Inv_W + PVOFF * Inv_LW; - delta = DELTA + LDELTA * Inv_L + WDELTA * Inv_W + PDELTA * Inv_LW; - - rdsw = RDSW + LRDSW * Inv_L + WRDSW * Inv_W + PRDSW * Inv_LW; - prwg = PRWG + LPRWG * Inv_L + WPRWG * Inv_W + PPRWG * Inv_LW; - prwb = PRWB + LPRWB * Inv_L + WPRWB * Inv_W + PPRWB * Inv_LW; - prt = PRT + LPRT * Inv_L + WPRT * Inv_W + PPRT * Inv_LW; - eta0 = ETA0 + LETA0 * Inv_L + WETA0 * Inv_W + PETA0 * Inv_LW; - etab = ETAB + LETAB * Inv_L + WETAB * Inv_W + PETAB * Inv_LW; - pclm = PCLM + LPCLM * Inv_L + WPCLM * Inv_W + PPCLM * Inv_LW; - - pdibl1 = pdibl1 + lpdibl1 * Inv_L + wpdibl1 * Inv_W + ppdibl1 * Inv_LW; - pdibl2 = pdibl2 + lpdibl2 * Inv_L + wpdibl2 * Inv_W + ppdibl2 * Inv_LW; - pdiblb = pdiblb + lpdiblb * Inv_L + wpdiblb * Inv_W + ppdiblb * Inv_LW; - pscbe1 = PSCBE1 + LPSCBE1 * Inv_L + WPSCBE1 * Inv_W + PPSCBE1 * Inv_LW; - pscbe2 = PSCBE2 + LPSCBE2 * Inv_L + WPSCBE2 * Inv_W + PPSCBE2 * Inv_LW; - pvag = PVAG + LPVAG * Inv_L + WPVAG * Inv_W + PPVAG * Inv_LW; - - wr = WR + LWR * Inv_L + WWR * Inv_W + PWR * Inv_LW; - dwg = DWG + LDWG * Inv_L + WDWG * Inv_W + PDWG * Inv_LW; - dwb = DWB + LDWB * Inv_L + WDWB * Inv_W + PDWB * Inv_LW; - b0 = B0 + LB0 * Inv_L + WB0 * Inv_W + PB0 * Inv_LW; - b1 = B1 + LB1 * Inv_L + WB1 * Inv_W + PB1 * Inv_LW; - - alpha0 = ALPHA0 + LALPHA0 * Inv_L + WALPHA0 * Inv_W + PALPHA0 * Inv_LW; - alpha1 = ALPHA1 + LALPHA1 * Inv_L + WALPHA1 * Inv_W + PALPHA1 * Inv_LW; - beta0 = BETA0 + LBETA0 * Inv_L + WBETA0 * Inv_W + PBETA0 * Inv_LW; - - /* CV model */ - elm = ELM + LELM * Inv_L + WELM * Inv_W + PELM * Inv_LW; - cgsl = CGSL + LCGSL * Inv_L + WCGSL * Inv_W + PCGSL * Inv_LW; - cgdl = CGDL + LCGDL * Inv_L + WCGDL * Inv_W + PCGDL * Inv_LW; - - ckappa = CKAPPA + LCKAPPA * Inv_L + WCKAPPA * Inv_W + PCKAPPA * Inv_LW; - - cf = cf + LCF * Inv_L + WCF * Inv_W + PCF * Inv_LW; - clc = CLC + LCLC * Inv_L + WCLC * Inv_W + PCLC * Inv_LW; - cle = CLE + LCLE * Inv_L + WCLE * Inv_W + PCLE * Inv_LW; - - vfbcv = VFBCV + LVFBCV * Inv_L + WVFBCV * Inv_W + PVFBCV * Inv_LW; - acde = ACDE + LACDE * Inv_L + WACDE * Inv_W + PACDE * Inv_LW; - moin = MOIN + LMOIN * Inv_L + WMOIN * Inv_W + PMOIN * Inv_LW; - noff_param = NOFF + LNOFF * Inv_L + WNOFF * Inv_W + PNOFF * Inv_LW; - voffcv_param = VOFFCV + LVOFFCV * Inv_L + WVOFFCV * Inv_W + PVOFFCV * Inv_LW; - - abulkCVfactor = 1.0 + pow((clc / leffCV), cle); - - T_0 = (TRatio - 1.0); - - ua = ua + ua1 * T_0; - ub = ub + ub1 * T_0; - uc = uc + uc1 * T_0; - - if (u0 > 1.0) - u0 = u0 / 1.0e4; - - u0temp = u0 * pow(TRatio, ute); - vsattemp = vsat - at * T_0; - rds0 = (rdsw + prt * T_0) / pow(weff * 1E6, wr); - - // *** check model and instance parameters *** - Fatal_Flag = 0; - - if (nlx < -leff) - begin - $strobe ("Fatal: Nlx = %g is less than -Leff.", nlx); - Fatal_Flag = 1; - end - - if (tox <= 0.0) - begin - $strobe ("Fatal: Tox = %g is not positive.", tox); - Fatal_Flag = 1; - end - - if (TOXM <= 0.0) - begin - $strobe ("Fatal: Toxm = %g is not positive.", TOXM); - Fatal_Flag = 1; - end - - if (npeak <= 0.0) - begin - $strobe ("Fatal: Nch = %g is not positive.", npeak); - Fatal_Flag = 1; - end - if (nsub <= 0.0) - begin - $strobe ("Fatal: Nsub = %g is not positive.", nsub); - Fatal_Flag = 1; - end - if (ngate < 0.0) - begin - $strobe ("Fatal: Ngate = %g Ngate is not positive.", ngate); - Fatal_Flag = 1; - end - if (ngate > 1.0e25) - begin - $strobe ("Fatal: Ngate = %g Ngate is too high", ngate); - Fatal_Flag = 1; - end - if (xj <= 0.0) - begin - $strobe ("Fatal: Xj = %g is not positive.", xj); - Fatal_Flag = 1; - end - - if (dvt1 < 0.0) - begin - $strobe ("Fatal: Dvt1 = %g is negative.", dvt1); - Fatal_Flag = 1; - end - - if (dvt1w < 0.0) - begin - $strobe ("Fatal: Dvt1w = %g is negative.", dvt1w); - Fatal_Flag = 1; - end - - if (w0 == -weff) - begin - $strobe ("Fatal: (W0 + Weff) = 0 causing divided-by-zero."); - Fatal_Flag = 1; - end - - if (dsub < 0.0) - begin - $strobe ("Fatal: Dsub = %g is negative.", dsub); - Fatal_Flag = 1; - end - if (b1 == -weff) - begin - $strobe ("Fatal: (B1 + Weff) = 0 causing divided-by-zero."); - Fatal_Flag = 1; - end - if (u0temp <= 0.0) - begin - $strobe ("Fatal: u0 at current temperature = %g is not positive.", u0temp); - Fatal_Flag = 1; - end - - /* Check delta parameter */ - if (delta < 0.0) - begin - $strobe ("Fatal: Delta = %g is less than zero.", delta); - Fatal_Flag = 1; - end - - if (vsattemp <= 0.0) - begin - $strobe ("Fatal: Vsat at current temperature = %g is not positive.", vsattemp); - Fatal_Flag = 1; - end - /* Check Rout parameters */ - if (pclm <= 0.0) - begin - $strobe ("Fatal: Pclm = %g is not positive.", pclm); - Fatal_Flag = 1; - end - - if (drout < 0.0) - begin - $strobe ("Fatal: Drout = %g is negative.", drout); - Fatal_Flag = 1; - end - - if (pscbe2 <= 0.0) - begin - $strobe ("Warning: Pscbe2 = %g is not positive.", pscbe2); - end - - if (unitLengthSidewallJctCap > 0.0 || unitLengthGateSidewallJctCap > 0.0) - begin - if (drainPerimeter < weff) - begin - $strobe ("Warning: Pd = %g is less than W.", drainPerimeter); - end - if (sourcePerimeter < weff) - begin - $strobe ("Warning: Ps = %g is less than W.", sourcePerimeter); - end - end - - if (noff_param < 0.1) - $strobe ("Warning: Noff = %g is too small.", noff_param); - if (noff_param > 4.0) - $strobe ("Warning: Noff = %g is too large.", noff_param); - if (voffcv_param < -0.5) - $strobe ("Warning: Voffcv = %g is too small.", voffcv_param); - if (voffcv_param > 0.5) - $strobe ("Warning: Voffcv = %g is too large.", voffcv_param); - - if (IJTH < 0.0) - begin - $strobe ("Fatal: Ijth = %g cannot be negative.", IJTH); - Fatal_Flag = 1; - end - - /* Check capacitance parameters */ - if (clc < 0.0) - begin - $strobe ("Fatal: Clc = %g is negative.", clc); - Fatal_Flag = 1; - end - - if (moin < 5.0) - $strobe ("Warning: Moin = %g is too small.", moin); - if (moin > 25.0) - $strobe ("Warning: Moin = %g is too large.", moin); - if (((acde < 0.4) && !(VERSION == 3.24)) || - ((acde < 0.4) && (VERSION == 3.24) && (CAPMOD == 3.0))) - $strobe ("Warning: Acde = %g is too small.", acde); - if (((acde > 1.6) && !(VERSION == 3.24)) || - ((acde > 1.6) && (VERSION == 3.24) && (CAPMOD == 3.0))) - $strobe ("Warning: Acde = %g is too large.", acde); - // *** end of parameters checking *** - - if (PARAMCHK ==1) - begin - /* Check L and W parameters */ - if (leff <= 5.0e-8) - $strobe ("Warning: Leff = %g may be too small.", leff); - if (leffCV <= 5.0e-8) - $strobe ("Warning: Leff for CV = %g may be too small.", leffCV); - if (weff <= 1.0e-7) - $strobe ("Warning: Weff = %g may be too small.", weff); - if (weffCV <= 1.0e-7) - $strobe ("Warning: Weff for CV = %g may be too small.", weffCV); - - /* Check threshold voltage parameters */ - if (nlx < 0.0) - $strobe ("Warning: Nlx = %g is negative.", nlx); - if (tox < 1.0e-9) - $strobe ("Warning: Tox = %g is less than 10A.", tox); - - if (npeak <= 1.0e15) - $strobe ("Warning: Nch = %g may be too small.", npeak); - else if (npeak >= 1.0e21) - $strobe ("Warning: Nch = %g may be too large.", npeak); - - if (nsub <= 1.0e14) - $strobe ("Warning: Nsub = %g may be too small.", nsub); - else if (nsub >= 1.0e21) - $strobe ("Warning: Nsub = %g may be too large.", nsub); - - if ((ngate > 0.0) && (ngate <= 1.0e18)) - $strobe ("Warning: Ngate = %g is less than 1.E18cm^-3.", ngate); - - if (dvt0 < 0.0) - $strobe ("Warning: Dvt0 = %g is negative.", dvt0); - if (abs(1.0e-6 / (w0 + weff)) > 10.0) - $strobe ("Warning: (W0 + Weff) may be too small."); - - /* Check subthreshold parameters */ - if (nfactor < 0.0) - $strobe ("Warning: Nfactor = %g is negative.", nfactor); - if (cdsc < 0.0) - $strobe ("Warning: Cdsc = %g is negative.", cdsc); - if (cdscd < 0.0) - $strobe ("Warning: Cdscd = %g is negative.", cdscd); - /* Check DIBL parameters */ - if (eta0 < 0.0) - $strobe ("Warning: Eta0 = %g is negative.", eta0); - /* Check Abulk parameters */ - if (abs(1.0e-6 / (b1 + weff)) > 10.0) - $strobe ("Warning: (B1 + Weff) may be too small."); - - /* Check Saturation parameters */ - if (a2 < 0.01) - begin - $strobe ("Warning: A2 = %g is too small. Set to 0.01.", a2); - a2 = 0.01; - end - else if (a2 > 1.0) - begin - $strobe ("Warning: A2 = %g is larger than 1. A2 is set to 1 and A1 is set to 0.", a2); - a2 = 1.0; - a1 = 0.0; - end - - if (rdsw < 0.0) - begin - $strobe ("Warning: Rdsw = %g is negative. Set to zero.", rdsw); - rdsw = 0.0; - rds0 = 0.0; - end - else if ((rds0 > 0.0) && (rds0 < 0.001)) - begin - $strobe ("Warning: Rds at current temperature = %g is less than 0.001 ohm. Set to zero.", rds0); - rds0 = 0.0; - end - if (vsattemp < 1.0e3) - $strobe ("Warning: Vsat at current temperature = %g may be too small.", vsattemp); - if (pdibl1 < 0.0) - $strobe ("Warning: Pdibl1 = %g is negative.", pdibl1); - if (pdibl2 < 0.0) - $strobe ("Warning: Pdibl2 = %g is negative.", pdibl2); - - /* Check overlap capacitance parameters */ - if (cgdo_param < 0.0) - begin - $strobe ("Warning: cgdo = %g is negative. Set to zero.", cgdo_param); - cgdo_param = 0.0; - end - if (cgso_param < 0.0) - begin - $strobe ("Warning: cgso = %g is negative. Set to zero.", cgso_param); - cgso_param = 0.0; - end - if (cgbo_param < 0.0) - begin - $strobe ("Warning: cgbo = %g is negative. Set to zero.", cgbo_param); - cgbo_param = 0.0; - end - - end/* loop for the parameter check for warning messages */ - - if (Fatal_Flag) - $finish(1); - - cgdo_param = (cgdo_param + cf) * weffCV; - cgso_param = (cgso_param + cf) * weffCV; - cgbo_param = cgbo_param * leffCV; - - T_0 = leffCV * leffCV; - tconst = u0temp * elm / (cox * weffCV * leffCV * T_0); - - if ( !npeakGiven && gamma1Given ) - begin - T_0 = gamma1 * cox; - npeak = 3.021E22 * T_0 * T_0; - end - - phi = 2.0 * Vtm0 * ln(npeak / ni); - sqrtPhi = sqrt(phi); - phis3 = sqrtPhi * phi; - - Xdep0 = sqrt(2.0 * `EPSSI / (`Charge_q * npeak * 1.0e6)) * sqrtPhi; - - litl = sqrt(3.0 * xj * tox); - vbi = Vtm0 * ln(1.0e20 * npeak / (ni * ni)); - - cdep0 = sqrt(`Charge_q * `EPSSI * npeak * 1.0e6 / 2.0 / phi); - - ldeb = sqrt(`EPSSI * Vtm0 / (`Charge_q * npeak * 1.0e6)) / 3.0; - acde = acde * pow((npeak / 2.0e16), -0.25); - - if ( k1Given || k2Given ) - begin - if (!k1Given) - begin - $strobe ("Warning: k1 should be specified with k2."); - k1 = 0.53; - end - if (!k2Given) - begin - $strobe ("Warning: k2 should be specified with k1."); - k2 = -0.0186; - end - - if (nsubGiven) - $strobe ("Warning: nsub is ignored because k1 or k2 is given."); - if (xtGiven) - $strobe ("Warning: xt is ignored because k1 or k2 is given."); - if (vbxGiven) - $strobe ("Warning: vbx is ignored because k1 or k2 is given."); - if (gamma1Given) - $strobe ("Warning: gamma1 is ignored because k1 or k2 is given."); - if (gamma2Given) - $strobe ("Warning: gamma2 is ignored because k1 or k2 is given."); - end - else - begin - if (!vbxGiven) - vbx = phi - 7.7348e-4 * npeak * xt * xt; - if (vbx > 0.0) - vbx = -vbx; - if (vbm > 0.0) - vbm = -vbm; - - if (!gamma1Given) - gamma1 = 5.753e-12 * sqrt(npeak) / cox; - if (!gamma2Given) - gamma2 = 5.753e-12 * sqrt(nsub) / cox; - - T_0 = gamma1 - gamma2; - T1 = sqrt(phi - vbx) - sqrtPhi; - T2 = sqrt(phi * (phi - vbm)) - phi; - - k2 = T_0 * T1 / (2.0 * T2 + vbm); - k1 = gamma2 - 2.0 * k2 * sqrt(phi - vbm); - - end - - if (k2 < 0.0) - begin - T_0 = 0.5 * k1 / k2; - vbsc = 0.9 * (phi - T_0 * T_0); - - if (vbsc > -3.0) - vbsc = -3.0; - else if (vbsc < -30.0) - vbsc = -30.0; - end - else - vbsc = -30.0; - - if (vbsc > vbm) - vbsc = vbm; - - if (!vfbGiven) - begin - if (vth0Given) - vfb = TYPE * vth0 - phi - k1 * sqrtPhi; - else - vfb = -1.0; - end - - if (!vth0Given) - vth0 = TYPE * (vfb + phi + k1 * sqrtPhi); - - k1ox = k1 * tox / TOXM; - k2ox = k2 * tox / TOXM; - - T1 = sqrt(`EPSSI / `EPSOX * tox * Xdep0); - T_0 = exp(-0.5 * dsub * leff / T1); - - theta0vb0 = (T_0 + 2.0 * T_0 * T_0); - - T_0 = exp(-0.5 * drout * leff / T1); - T2 = (T_0 + 2.0 * T_0 * T_0); - - thetaRout = pdibl1 * T2 + pdibl2; - - /* vfbzb for capMod 1, 2 & 3 */ - tmp = sqrt(Xdep0); - tmp1 = vbi - phi; - tmp2 = factor1 * tmp; - - T_0 = -0.5 * dvt1w * weff * leff / tmp2; - - if (T_0 > -`EXP_THRESHOLD) - begin - T1 = exp(T_0); - T2 = T1 * (1.0 + 2.0 * T1); - end - else - begin - T1 = `MIN_EXP; - T2 = T1 * (1.0 + 2.0 * T1); - end - - T_0 = dvt0w * T2; - T2 = T_0 * tmp1; - - T_0 = -0.5 * dvt1 * leff / tmp2; - - if (T_0 > -`EXP_THRESHOLD) - begin - T1 = exp(T_0); - T3 = T1 * (1.0 + 2.0 * T1); - end - else - begin - T1 = `MIN_EXP; - T3 = T1 * (1.0 + 2.0 * T1); - end - - T3 = dvt0 * T3 * tmp1; - - T4 = tox * phi / (weff + w0); - - T_0 = sqrt(1.0 + nlx / leff); - T5 = k1ox * (T_0 - 1.0) * sqrtPhi + (kt1 + kt1l / leff) * (TRatio - 1.0); - - tmp3 = TYPE * vth0 - T2 - T3 + k3 * T4 + T5; - vfbzb = tmp3 - phi - k1 * sqrtPhi; - - // End of vfbzb calculation - - // process source/drain series resistance - drainConductance = sheetResistance * drainSquares; - - if (drainConductance > 0.0) - drainConductance = 1.0 / drainConductance; - else - drainConductance = 0.0; - - sourceConductance = sheetResistance * sourceSquares; - - if (sourceConductance > 0.0) - sourceConductance = 1.0 / sourceConductance; - else - sourceConductance = 0.0; - - Nvtm = vtm * jctEmissionCoeff; - - if ((sourceArea <= 0.0) && (sourcePerimeter <= 0.0)) - SourceSatCurrent = 1.0e-14; - else - SourceSatCurrent = sourceArea * jctTempSatCurDensity - + sourcePerimeter * jctSidewallTempSatCurDensity; - - if ((SourceSatCurrent > 0.0) && (IJTH > 0.0)) - begin - vjsm = Nvtm * ln(IJTH / SourceSatCurrent + 1.0); - - if (VERSION == 3.24) - IsEvjsm = SourceSatCurrent * exp(vjsm / Nvtm); - end - - if ((drainArea <= 0.0) && (drainPerimeter <= 0.0)) - DrainSatCurrent = 1.0e-14; - else - DrainSatCurrent = drainArea * jctTempSatCurDensity - + drainPerimeter * jctSidewallTempSatCurDensity; - - if ((DrainSatCurrent > 0.0) && (IJTH > 0.0)) - begin - vjdm = Nvtm * ln(IJTH / DrainSatCurrent + 1.0); - - if (VERSION == 3.24) - IsEvjdm = DrainSatCurrent * exp(vjdm / Nvtm); - end - - end - - //*********************************// - //****** End of initial_step ******// - //*********************************// - - vbs = TYPE * V(bulk, sourcep); - vgs = TYPE * V(gate, sourcep); - vds = TYPE * V(drainp, sourcep); -`ifdef NQSMOD - qdef = TYPE * V(q); -`endif - - vbd = vbs - vds; - vgd = vgs - vds; - vgb = vgs - vbs; - - temp = $temperature; - - // Source/drain junction diode DC model begins - if (SourceSatCurrent <= 0.0) - begin - gbs = GMIN; - cbs = gbs * vbs; - end - else - begin - if (IJTH == 0.0) - begin - evbs = exp(vbs / Nvtm); - gbs = SourceSatCurrent * evbs / Nvtm + GMIN; - cbs = SourceSatCurrent * (evbs - 1.0) + GMIN * vbs; - end - else - begin - if (vbs < vjsm) - begin - evbs = exp(vbs / Nvtm); - gbs = SourceSatCurrent * evbs / Nvtm + GMIN; - cbs = SourceSatCurrent * (evbs - 1.0) + GMIN * vbs; - end - else - begin - if (VERSION == 3.24) - begin - T_0 = IsEvjsm / Nvtm; - cbs = IsEvjsm - SourceSatCurrent - + GMIN * vbs + T_0 * (vbs - vjsm); - end - else - begin - T_0 = (SourceSatCurrent + IJTH) / Nvtm; - cbs = IJTH + GMIN * vbs + T_0 * (vbs - vjsm); - end - - gbs = T_0 + GMIN; - end - end - end - - if (DrainSatCurrent <= 0.0) - begin - gbd = GMIN; - cbd = gbd * vbd; - end - else - begin - if (IJTH == 0.0) - begin - evbd = exp(vbd / Nvtm); - gbd = DrainSatCurrent * evbd / Nvtm + GMIN; - cbd = DrainSatCurrent * (evbd - 1.0) + GMIN * vbd; - end - else - begin - if (vbd < vjdm) - begin - evbd = exp(vbd / Nvtm); - gbd = DrainSatCurrent * evbd / Nvtm + GMIN; - cbd = DrainSatCurrent * (evbd - 1.0) + GMIN * vbd; - end - else - begin - if (VERSION == 3.24) - begin - T_0 = IsEvjdm / Nvtm; - cbd = IsEvjdm - DrainSatCurrent - + GMIN * vbd + T_0 * (vbd - vjdm); - end - else - begin - T_0 = (DrainSatCurrent + IJTH) / Nvtm; - cbd = IJTH + GMIN * vbd + T_0 * (vbd - vjdm); - end - gbd = T_0 + GMIN; - - end - end - end - // End of diode DC model - - if (vds >= 0.0) - begin /* normal mode */ - mode = 1; - Vds = vds; - Vgs = vgs; - Vbs = vbs; - end - else - begin /* inverse mode */ - mode = -1; - Vds = -vds; - Vgs = vgd; - Vbs = vbd; - end - - T_0 = Vbs - vbsc - 0.001; - T1 = sqrt(T_0 * T_0 - 0.004 * vbsc); - Vbseff = vbsc + 0.5 * (T_0 + T1); - - // Added to avoid the possible numerical problems due to computer accuracy. - // (See comments for diffVds) - if (Vbseff < Vbs) - Vbseff = Vbs; - - if (Vbseff > 0.0) - begin - T_0 = phi / (phi + Vbseff); - Phis = phi * T_0; - sqrtPhis = phis3 / (phi + 0.5 * Vbseff); - end - else - begin - Phis = phi - Vbseff; - sqrtPhis = sqrt(Phis); - end - - Xdep = Xdep0 * sqrtPhis / sqrtPhi; - - Leff = leff; - Vtm = vtm; - - /*** Vth Calculation ***/ - T3 = sqrt(Xdep); - V0 = vbi - phi; - - T_0 = dvt2 * Vbseff; - - if (T_0 >= - 0.5) - begin - T1 = 1.0 + T_0; - T2 = dvt2; - end - else /* Added to avoid any discontinuity problems caused by dvt2 */ - begin - T4 = 1.0 / (3.0 + 8.0 * T_0); - T1 = (1.0 + 3.0 * T_0) * T4; - T2 = dvt2 * T4 * T4; - end - - lt1 = factor1 * T3 * T1; - - T_0 = dvt2w * Vbseff; - - if (T_0 >= - 0.5) - begin - T1 = 1.0 + T_0; - T2 = dvt2w; - end - else /* Added to avoid any discontinuity problems caused by dvt2w */ - begin - T4 = 1.0 / (3.0 + 8.0 * T_0); - T1 = (1.0 + 3.0 * T_0) * T4; - T2 = dvt2w * T4 * T4; - end - - ltw = factor1 * T3 * T1; - - T_0 = -0.5 * dvt1 * Leff / lt1; - - if (T_0 > -`EXP_THRESHOLD) - begin - T1 = exp(T_0); - Theta0 = T1 * (1.0 + 2.0 * T1); - end - else - begin - T1 = `MIN_EXP; - Theta0 = T1 * (1.0 + 2.0 * T1); - end - - thetavth = dvt0 * Theta0; - Delt_vth = thetavth * V0; - - T_0 = -0.5 * dvt1w * weff * Leff / ltw; - - if (T_0 > -`EXP_THRESHOLD) - begin - T1 = exp(T_0); - T2 = T1 * (1.0 + 2.0 * T1); - end - else - begin - T1 = `MIN_EXP; - T2 = T1 * (1.0 + 2.0 * T1); - end - - T_0 = dvt0w * T2; - T2 = T_0 * V0; - - TempRatio = temp / tnom - 1.0; - T_0 = sqrt(1.0 + nlx / Leff); - T1 = k1ox * (T_0 - 1.0) * sqrtPhi - + (kt1 + kt1l / Leff + kt2 * Vbseff) * TempRatio; - - tmp2 = tox *phi / (weff + w0); - - T3 = eta0 + etab * Vbseff; - if (T3 < 1.0e-4) /* avoid discontinuity problems caused by etab */ - begin - T9 = 1.0 / (3.0 - 2.0e4 * T3); - T3 = (2.0e-4 - T3) * T9; - T4 = T9 * T9; - end - else - T4 = 1.0; - - dDIBL_Sft_dVd = T3 * theta0vb0; - DIBL_Sft = dDIBL_Sft_dVd * Vds; - - Vth = TYPE * vth0 - k1 * sqrtPhi - + k1ox * sqrtPhis - - k2ox * Vbseff - - Delt_vth - T2 - + (k3 + k3b * Vbseff) * tmp2 + T1 - DIBL_Sft; - - /*** end of Vth calculation ***/ - - /* Calculate n */ - tmp2 = nfactor * `EPSSI / Xdep; - tmp3 = cdsc + cdscb * Vbseff + cdscd * Vds; - tmp4 = (tmp2 + tmp3 * Theta0 + cit) / cox; - - if (tmp4 >= -0.5) - n = 1.0 + tmp4; - else - begin /* avoid discontinuity problems caused by tmp4 */ - T_0 = 1.0 / (3.0 + 8.0 * tmp4); - n = (1.0 + 3.0 * tmp4) * T_0; - end - - /* Poly Gate Si Depletion Effect */ - T_0 = vfb + phi; - - if ((ngate > 1.0e18) && (ngate < 1.0e25) && (Vgs > T_0)) - begin /* added to avoid the problem caused by ngate */ - T1 = 1.0e6 * `Charge_q * `EPSSI * ngate / (cox * cox); - T4 = sqrt(1.0 + 2.0 * (Vgs - T_0) / T1); - T2 = T1 * (T4 - 1.0); - T3 = 0.5 * T2 * T2 / T1; /* T3 = Vpoly */ - T7 = 1.12 - T3 - 0.05; - T6 = sqrt(T7 * T7 + 0.224); - T5 = 1.12 - 0.5 * (T7 + T6); - Vgs_eff = Vgs - T5; - end - else - Vgs_eff = Vgs; - - Vgst = Vgs_eff - Vth; - - /* Effective Vgst (Vgsteff) Calculation */ - T10 = 2.0 * n * Vtm; - VgstNVt = Vgst / T10; - ExpArg = (2.0 * voff - Vgst) / T10; - - /* MCJ: Very small Vgst */ - if (VgstNVt > `EXP_THRESHOLD) - begin - Vgsteff = Vgst; - end - else if (ExpArg > `EXP_THRESHOLD) - begin - T_0 = (Vgst - voff) / (n * Vtm); - ExpVgst = exp(T_0); - Vgsteff = Vtm * cdep0 / cox * ExpVgst; - end - else - begin - ExpVgst = exp(VgstNVt); - T1 = T10 * ln(1.0 + ExpVgst); - T2 = 1.0 - T10 * (-cox / (Vtm * cdep0) * exp(ExpArg)); - Vgsteff = T1 / T2; - end - - /* Calculate Effective Channel Geometry */ - T9 = sqrtPhis - sqrtPhi; - Weff = weff - 2.0 * (dwg * Vgsteff + dwb * T9); - - if (Weff < 2.0e-8) /* to avoid the discontinuity problem due to Weff*/ - begin - T_0 = 1.0 / (6.0e-8 - 2.0 * Weff); - Weff = 2.0e-8 * (4.0e-8 - Weff) * T_0; - end - - T_0 = prwg * Vgsteff + prwb * T9; - if (T_0 >= -0.9) - Rds = rds0 * (1.0 + T_0); - else /* to avoid the discontinuity problem due to prwg and prwb*/ - begin - T1 = 1.0 / (17.0 + 20.0 * T_0); - Rds = rds0 * (0.8 + T_0) * T1; - end - - /* Calculate Abulk */ - T1 = 0.5 * k1ox / sqrtPhis; - - T9 = sqrt(xj * Xdep); - tmp1 = Leff + 2.0 * T9; - T5 = Leff / tmp1; - tmp2 = a0 * T5; - tmp3 = weff + b1; - tmp4 = b0 / tmp3; - T2 = tmp2 + tmp4; - T6 = T5 * T5; - T7 = T5 * T6; - - Abulk0 = 1.0 + T1 * T2; - - T8 = ags * a0 * T7; - - Abulk = Abulk0 + (-T1 * T8) * Vgsteff; - - if (Abulk0 < 0.1) /* added to avoid the problems caused by Abulk0 */ - begin - T9 = 1.0 / (3.0 - 20.0 * Abulk0); - Abulk0 = (0.2 - Abulk0) * T9; - end - - if (Abulk < 0.1) /* added to avoid the problems caused by Abulk */ - begin - T9 = 1.0 / (3.0 - 20.0 * Abulk); - Abulk = (0.2 - Abulk) * T9; - end - - T2 = keta * Vbseff; - if (T2 >= -0.9) - T_0 = 1.0 / (1.0 + T2); - else /* added to avoid the problems caused by Keta */ - begin - T1 = 1.0 / (0.8 + T2); - T_0 = (17.0 + 20.0 * T2) * T1; - end - - Abulk = T_0 * Abulk; - Abulk0 = T_0 * Abulk0; - - /* Mobility calculation */ - if (MOBMOD == 1) - begin - T_0 = Vgsteff + Vth + Vth; - T2 = ua + uc * Vbseff; - T3 = T_0 / tox; - T5 = T3 * (T2 + ub * T3); - end - else if (MOBMOD == 2) - T5 = Vgsteff / tox * (ua + uc * Vbseff + ub * Vgsteff / tox); - else - begin - T_0 = Vgsteff + Vth + Vth; - T2 = 1.0 + uc * Vbseff; - T3 = T_0 / tox; - T4 = T3 * (ua + ub * T3); - T5 = T4 * T2; - end - - if (T5 >= -0.8) - Denomi = 1.0 + T5; - else /* Added to avoid the discontinuity problem caused by ua and ub*/ - Denomi = (0.6 + T5) * (1.0 / (7.0 + 10.0 * T5)); - - ueff = u0temp / Denomi; - - /* Saturation Drain Voltage Vdsat */ - WVCox = Weff * vsattemp * cox; - WVCoxRds = WVCox * Rds; - - Esat = 2.0 * vsattemp / ueff; - EsatL = Esat * Leff; - - /* Sqrt() */ - if (a1 == 0.0) - Lambda = a2; - else if (a1 > 0.0) - /* Added to avoid the discontinuity problem caused by a1 and a2 (Lambda) */ - begin - T_0 = 1.0 - a2; - T1 = T_0 - a1 * Vgsteff - 0.0001; - T2 = sqrt(T1 * T1 + 0.0004 * T_0); - Lambda = a2 + T_0 - 0.5 * (T1 + T2); - end - else - begin - T1 = a2 + a1 * Vgsteff - 0.0001; - T2 = sqrt(T1 * T1 + 0.0004 * a2); - Lambda = 0.5 * (T1 + T2); - end - - Vgst2Vtm = Vgsteff + 2.0 * Vtm; - - if ((Rds == 0.0) && (Lambda == 1.0)) - begin - T_0 = 1.0 / (Abulk * EsatL + Vgst2Vtm); - tmp1 = 0.0; - T1 = T_0 * T_0; - T2 = Vgst2Vtm * T_0; - T3 = EsatL * Vgst2Vtm; - Vdsat = T3 * T_0; - end - else - begin - T9 = Abulk * WVCoxRds; - T7 = Vgst2Vtm * T9; - T6 = Vgst2Vtm * WVCoxRds; - T_0 = 2.0 * Abulk * (T9 - 1.0 + 1.0 / Lambda); - - T1 = Vgst2Vtm * (2.0 / Lambda - 1.0) + Abulk * EsatL + 3.0 * T7; - T2 = Vgst2Vtm * (EsatL + 2.0 * T6); - T3 = sqrt(T1 * T1 - 2.0 * T_0 * T2); - - Vdsat = (T1 - T3) / T_0; - end - - vdsat = Vdsat; - - /* Effective Vds (Vdseff) Calculation */ - T1 = Vdsat - Vds - delta; - T2 = sqrt(T1 * T1 + 4.0 * delta * Vdsat); - Vdseff = Vdsat - 0.5 * (T1 + T2); - - if ((Vds == 0.0) && (VERSION == 3.24)) - Vdseff = 0.0; - - /* Calculate VAsat */ - tmp4 = 1.0 - 0.5 * Abulk * Vdsat / Vgst2Vtm; - T9 = WVCoxRds * Vgsteff; - T_0 = EsatL + Vdsat + 2.0 * T9 * tmp4; - T9 = WVCoxRds * Abulk; - T1 = 2.0 / Lambda - 1.0 + T9; - - Vasat = T_0 / T1; - - if (Vdseff > Vds) - Vdseff = Vds; /* This code is added to fixed the problem - caused by computer precision when - Vds is very close to Vdseff. */ - diffVds = Vds - Vdseff; - - /* Calculate VACLM */ - if ((pclm > 0.0) && (diffVds > 1.0e-10)) - begin - T_0 = 1.0 / (pclm * Abulk * litl); - T2 = Vgsteff / EsatL; - T1 = Leff * (Abulk + T2); - T9 = T_0 * T1; - VACLM = T9 * diffVds; - end - else - VACLM = `MAX_EXP; - - /* Calculate VADIBL */ - if (thetaRout > 0.0) - begin - T_0 = Vgst2Vtm * Abulk * Vdsat; - T1 = Vgst2Vtm + (Abulk * Vdsat); - VADIBL = (Vgst2Vtm - T_0 / T1) / thetaRout; - - T7 = pdiblb * Vbseff; - if (T7 >= -0.9) - begin - T3 = 1.0 / (1.0 + T7); - VADIBL = T3 * VADIBL; - end - else - /* Added to avoid the discontinuity problem caused by pdiblcb */ - begin - T4 = 1.0 / (0.8 + T7); - T3 = (17.0 + 20.0 * T7) * T4; - VADIBL = T3 * VADIBL; - end - end - else - VADIBL = `MAX_EXP; - - /* Calculate VA */ - T9 = pvag / EsatL * Vgsteff; - - if (T9 > -0.9) - T_0 = 1.0 + T9; - else /* Added to avoid the discontinuity problems caused by pvag */ - T_0 = (0.8 + T9) * 1.0 / (17.0 + 20.0 * T9); - - T1 = VACLM * VADIBL / (VACLM + VADIBL); - Va = Vasat + T_0 * T1; - - /* Calculate VASCBE */ - if (pscbe2 > 0.0) - begin - if ( diffVds > (pscbe1 * litl / `EXP_THRESHOLD) ) - VASCBE = Leff * exp(pscbe1 * litl / diffVds) / pscbe2; - else - VASCBE = `MAX_EXP * Leff / pscbe2; - end - else - VASCBE = `MAX_EXP; - - /* Calculate Ids */ - CoxWovL = cox * Weff / Leff; - beta = ueff * CoxWovL; - - fgche1 = Vgsteff * (1.0 - 0.5 * Abulk * Vdseff / Vgst2Vtm); - fgche2 = 1.0 + (Vdseff / EsatL); - - gche = beta * fgche1 / fgche2; - Idl = gche * Vdseff / (1.0 + gche * Rds); - - Idsa = Idl * (1.0 + (diffVds / Va)); - Ids = Idsa * (1.0 + (diffVds / VASCBE)); - - /* Substrate current begins */ - tmp = alpha0 + alpha1 * Leff; - - if ((tmp <= 0.0) || (beta0 <= 0.0)) - Isub = 0.0; - else - begin - T2 = tmp / Leff; - - if (diffVds > beta0 / `EXP_THRESHOLD) - T1 = T2 * diffVds * exp(-beta0 / diffVds); - else - T1 = T2 * `MIN_EXP * diffVds; - - Isub = T1 * Idsa; - end - - cdrain = Ids; - csub = Isub; - - // End of I-V model - - - // C-V model - - // *** Depletion capacitance calculation *** - - /* charge storage elements - * bulk-drain and bulk-source depletion capacitances - * czbd : zero bias drain junction capacitance - * czbs : zero bias source junction capacitance - * czbdsw: zero bias drain junction sidewall capacitance - along field oxide - * czbssw: zero bias source junction sidewall capacitance - along field oxide - * czbdswg: zero bias drain junction sidewall capacitance - along gate side - * czbsswg: zero bias source junction sidewall capacitance - along gate side - */ - if (VERSION == 3.24) - begin - czbd = unitAreaTempJctCap * drainArea; - czbs = unitAreaTempJctCap * sourceArea; - end - else - begin - czbd = unitAreaJctCap * drainArea; - czbs = unitAreaJctCap * sourceArea; - end - - if (drainPerimeter < weff) - begin - if (VERSION == 3.24) - czbdswg = unitLengthGateSidewallTempJctCap * drainPerimeter; - else - czbdswg = unitLengthGateSidewallJctCap * drainPerimeter; - czbdsw = 0.0; - end - else - begin - if (VERSION == 3.24) - begin - czbdsw = unitLengthSidewallTempJctCap * (drainPerimeter - weff); - czbdswg = unitLengthGateSidewallTempJctCap * weff; - end - else - begin - czbdsw = unitLengthSidewallJctCap * (drainPerimeter - weff); - czbdswg = unitLengthGateSidewallJctCap * weff; - end - end - - if (sourcePerimeter < weff) - begin - czbssw = 0.0; - if (VERSION == 3.24) - czbsswg = unitLengthGateSidewallTempJctCap * sourcePerimeter; - else - czbsswg = unitLengthGateSidewallJctCap * sourcePerimeter; - end - else - begin - if (VERSION == 3.24) - begin - czbssw = unitLengthSidewallTempJctCap * (sourcePerimeter - weff); - czbsswg = unitLengthGateSidewallTempJctCap * weff; - end - else - begin - czbssw = unitLengthSidewallJctCap * (sourcePerimeter - weff); - czbsswg = unitLengthGateSidewallJctCap * weff; - end - end - - mj = bulkJctBotGradingCoeff; - mjsw = bulkJctSideGradingCoeff; - mjswg = bulkJctGateSideGradingCoeff; - - - qbs = 0.0; - qbd = 0.0; - - /* Source Bulk Junction */ - if (vbs == 0.0) - begin - qbs = 0.0; - capbs = czbs + czbssw + czbsswg; - end - else if (vbs < 0.0) - begin - if (czbs > 0.0) - begin - arg = 1.0 - vbs / PhiB; - - if (mj == 0.5) - sarg = 1.0 / sqrt(arg); - else - sarg = exp(-mj * ln(arg)); - - qbs = PhiB * czbs * (1.0 - arg * sarg) / (1.0 - mj); - capbs = czbs * sarg; - end - else - begin - qbs = 0.0; - capbs = 0.0; - end // else: !if(czbs > 0.0) - - if (czbssw > 0.0) - begin - arg = 1.0 - vbs / PhiBSW; - - if (mjsw == 0.5) - sarg = 1.0 / sqrt(arg); - else - sarg = exp(-mjsw * ln(arg)); - - qbs = qbs + PhiBSW * czbssw * (1.0 - arg * sarg) / (1.0 - mjsw); - capbs = capbs + czbssw * sarg; - end // if (czbssw > 0.0) - - if (czbsswg > 0.0) - begin - arg = 1.0 - vbs / PhiBSWG; - - if (mjswg == 0.5) - sarg = 1.0 / sqrt(arg); - else - sarg = exp(-mjswg * ln(arg)); - - qbs = qbs + PhiBSWG * czbsswg * (1.0 - arg * sarg) / (1.0 - mjswg); - capbs = capbs + czbsswg * sarg; - end - end - else - begin - T_0 = czbs + czbssw + czbsswg; - T1 = vbs * (czbs * mj / PhiB + czbssw * mjsw / PhiBSW + czbsswg * mjswg / PhiBSWG); - - qbs = vbs * (T_0 + 0.5 * T1); - capbs = T_0 + T1; - end - - /* Drain Bulk Junction */ - if (vbd == 0.0) - begin - qbd = 0.0; - capbd = czbd + czbdsw + czbdswg; - end - else if (vbd < 0.0) - begin - if (czbd > 0.0) - begin - arg = 1.0 - vbd / PhiB; - - if (mj == 0.5) - sarg = 1.0 / sqrt(arg); - else - sarg = exp(-mj * ln(arg)); - - qbd = PhiB * czbd * (1.0 - arg * sarg) / (1.0 - mj); - capbd = czbd * sarg; - end - else - begin - qbd = 0.0; - capbd = 0.0; - end // else: !if(czbd > 0.0) - - if (czbdsw > 0.0) - begin - arg = 1.0 - vbd / PhiBSW; - - if (mjsw == 0.5) - sarg = 1.0 / sqrt(arg); - else - sarg = exp(-mjsw * ln(arg)); - - qbd = qbd + PhiBSW * czbdsw * (1.0 - arg * sarg) / (1.0 - mjsw); - capbd = capbd + czbdsw * sarg; - end // if (czbdsw > 0.0) - - if (czbdswg > 0.0) - begin - arg = 1.0 - vbd / PhiBSWG; - - if (mjswg == 0.5) - sarg = 1.0 / sqrt(arg); - else - sarg = exp(-mjswg * ln(arg)); - - qbd = qbd + PhiBSWG * czbdswg * (1.0 - arg * sarg) / (1.0 - mjswg); - capbd = capbd + czbdswg * sarg; - end - end - else - begin - T_0 = czbd + czbdsw + czbdswg; - T1 = vbd * (czbd * mj / PhiB + czbdsw * mjsw / PhiBSW + czbdswg * mjswg / PhiBSWG); - - qbd = vbd * (T_0 + 0.5 * T1); - capbd = T_0 + T1; - end - - // *** Intrinsic charge calculation *** - // qdrn, qgate, qsrc, qbulk - - qgate = 0.0; - qdrn = 0.0; - qsrc = 0.0; - qbulk = 0.0; - - if (XPART < 0) - begin - qgate = 0.0; - qdrn = 0.0; - qsrc = 0.0; - qbulk = 0.0; -`ifdef NQSMOD - gtau = 0.0; -`endif - end - else if (CAPMOD == 0) - begin - if (Vbseff < 0.0) - Vbseff = Vbs; - else - Vbseff = phi - Phis; - - Vfb = vfbcv; - Vth = Vfb + phi + k1ox * sqrtPhis; - - Vgst = Vgs_eff - Vth; - - CoxWL = cox * weffCV * leffCV; - Arg1 = Vgs_eff - Vbseff - Vfb; - - if (Arg1 <= 0.0) - begin - qgate = CoxWL * Arg1; - qbulk = -qgate; - qdrn = 0.0; - - qinv = 0.0; - end - else if (Vgst <= 0.0) - begin - T1 = 0.5 * k1ox; - T2 = sqrt(T1 * T1 + Arg1); - qgate = CoxWL * k1ox * (T2 - T1); - qbulk = -qgate; - qdrn = 0.0; - - qinv = 0.0; - end - else - begin - One_Third_CoxWL = CoxWL / 3.0; - Two_Third_CoxWL = 2.0 * One_Third_CoxWL; - - AbulkCV = Abulk0 * abulkCVfactor; - Vdsat = Vgst / AbulkCV; - - if (XPART > 0.5) - begin - /* 0/100 Charge partition model */ - if (Vdsat <= Vds) - begin /* saturation region */ - T1 = Vdsat / 3.0; - qgate = CoxWL * (Vgs_eff - Vfb - phi - T1); - T2 = -Two_Third_CoxWL * Vgst; - qbulk = -(qgate + T2); - qdrn = 0.0; - - qinv = -(qgate + qbulk); - end - else - begin - /* linear region */ - Alphaz = Vgst / Vdsat; - T1 = 2.0 * Vdsat - Vds; - T2 = Vds / (3.0 * T1); - T3 = T2 * Vds; - T9 = 0.25 * CoxWL; - T4 = T9 * Alphaz; - T7 = 2.0 * Vds - T1 - 3.0 * T3; - T8 = T3 - T1 - 2.0 * Vds; - qgate = CoxWL * (Vgs_eff - Vfb - phi - 0.5 * (Vds - T3)); - T10 = T4 * T8; - qdrn = T4 * T7; - qbulk = -(qgate + qdrn + T10); - - qinv = -(qgate + qbulk); - end - end // if (XPART > 0.5) - - else if (XPART < 0.5) - - begin /* 40/60 Charge partition model */ - - if (Vds >= Vdsat) - begin /* saturation region */ - T1 = Vdsat / 3.0; - qgate = CoxWL * (Vgs_eff - Vfb - phi - T1); - T2 = -Two_Third_CoxWL * Vgst; - qbulk = -(qgate + T2); - qdrn = 0.4 * T2; - - qinv = -(qgate + qbulk); - end - else - begin /* linear region */ - Alphaz = Vgst / Vdsat; - T1 = 2.0 * Vdsat - Vds; - T2 = Vds / (3.0 * T1); - T3 = T2 * Vds; - T9 = 0.25 * CoxWL; - T4 = T9 * Alphaz; - qgate = CoxWL * (Vgs_eff - Vfb - phi - 0.5 * (Vds - T3)); - - T6 = 8.0 * Vdsat * Vdsat - 6.0 * Vdsat * Vds - + 1.2 * Vds * Vds; - T8 = T2 / T1; - T7 = Vds - T1 - T8 * T6; - qdrn = T4 * T7; - - T7 = 2.0 * (T1 + T3); - qbulk = -(qgate - T4 * T7); - - qinv = -(qgate + qbulk); - end // else: !if(Vds >= Vdsat) - end // if (XPART < 0.5) - else - begin /* 50/50 partitioning */ - if (Vds >= Vdsat) - begin /* saturation region */ - T1 = Vdsat / 3.0; - qgate = CoxWL * (Vgs_eff - Vfb - phi - T1); - T2 = -Two_Third_CoxWL * Vgst; - qbulk = -(qgate + T2); - qdrn = 0.5 * T2; - - qinv = -(qgate + qbulk); - end - else - begin /* linear region */ - Alphaz = Vgst / Vdsat; - T1 = 2.0 * Vdsat - Vds; - T2 = Vds / (3.0 * T1); - T3 = T2 * Vds; - T9 = 0.25 * CoxWL; - T4 = T9 * Alphaz; - qgate = CoxWL * (Vgs_eff - Vfb - phi - 0.5 * (Vds - T3)); - - T7 = T1 + T3; - qdrn = -T4 * T7; - qbulk = - (qgate + qdrn + qdrn); - - qinv = -(qgate + qbulk); - end - end - end - end - else - begin - if (Vbseff < 0.0) - VbseffCV = Vbseff; - else - VbseffCV = phi - Phis; - - CoxWL = cox * weffCV * leffCV; - - /* Seperate VgsteffCV with noff and voffcv */ - Noff2 = n * noff_param; - T_0 = Vtm * Noff2; - VgstNVt = (Vgst - voffcv_param) / T_0; - - if (VgstNVt > `EXP_THRESHOLD) - Vgsteff = Vgst - voffcv_param; - else if (VgstNVt < -`EXP_THRESHOLD) - Vgsteff = T_0 * ln(1.0 + `MIN_EXP); - else - begin - ExpVgst = exp(VgstNVt); - Vgsteff = T_0 * ln(1.0 + ExpVgst); - end /* End of VgsteffCV - Weidong 5/1998 */ - - if (CAPMOD == 1) - begin - if (VERSION < 3.2) - Vfb = Vth - phi - k1ox * sqrtPhis; - else - Vfb = vfbzb; - - Arg1 = Vgs_eff - VbseffCV - Vfb - Vgsteff; - - if (Arg1 <= 0.0) - qgate = CoxWL * Arg1; - else - begin - T_0 = 0.5 * k1ox; - T1 = sqrt(T_0 * T_0 + Arg1); - qgate = CoxWL * k1ox * (T1 - T_0); - end - - qbulk = -qgate; - - One_Third_CoxWL = CoxWL / 3.0; - Two_Third_CoxWL = 2.0 * One_Third_CoxWL; - - AbulkCV = Abulk0 * abulkCVfactor; - VdsatCV = Vgsteff / AbulkCV; - - if (VdsatCV < Vds) - begin - T_0 = Vgsteff - VdsatCV / 3.0; - qgate = qgate + CoxWL * T_0; - - T_0 = VdsatCV - Vgsteff; - qbulk = qbulk + One_Third_CoxWL * T_0; - - if (XPART > 0.5) - T_0 = -Two_Third_CoxWL; - else if (XPART < 0.5) - T_0 = -0.4 * CoxWL; - else - T_0 = -One_Third_CoxWL; - - qsrc = T_0 * Vgsteff; - end - else - begin - T_0 = AbulkCV * Vds; - T1 = 12.0 * (Vgsteff - 0.5 * T_0 + 1.0e-20); - T2 = Vds / T1; - T3 = T_0 * T2; - - qgate = qgate + CoxWL * (Vgsteff - 0.5 * Vds + T3); - qbulk = qbulk + CoxWL * (1.0 - AbulkCV) * (0.5 * Vds - T3); - - if (XPART > 0.5) - begin /* 0/100 Charge petition model */ - qsrc = -CoxWL * (0.5 * Vgsteff + 0.25 * T_0 - T_0 * T_0 / (T1 + T1)); - end - else if (XPART < 0.5) - begin /* 40/60 Charge petition model */ - T2 = 0.5 * CoxWL / (T1 / 12.0 * T1 / 12.0); - T3 = Vgsteff * (2.0 * T_0 * T_0 / 3.0 + Vgsteff * (Vgsteff - 4.0 * T_0 / 3.0)) - - 2.0 * T_0 * T_0 * T_0 / 15.0; - qsrc = -T2 * T3; - end - else - begin /* 50/50 Charge petition model */ - qsrc = -0.5 * (qgate + qbulk); - end - end - - qdrn = -(qgate + qbulk + qsrc); - qinv = -(qgate + qbulk); - end // if (CAPMOD == 1) - - else if (CAPMOD == 2) - begin - if (VERSION < 3.2) - Vfb = Vth - phi - k1ox * sqrtPhis; - else - Vfb = vfbzb; - - V3 = Vfb - Vgs_eff + VbseffCV - `DELTA_3; - if (Vfb <= 0.0) - begin - T_0 = sqrt(V3 * V3 - 4.0 * `DELTA_3 * Vfb); - T2 = -`DELTA_3 / T_0; - end - else - begin - T_0 = sqrt(V3 * V3 + 4.0 * `DELTA_3 * Vfb); - T2 = `DELTA_3 / T_0; - end - - T1 = 0.5 * (1.0 + V3 / T_0); - Vfbeff = Vfb - 0.5 * (V3 + T_0); - Qac0 = CoxWL * (Vfbeff - Vfb); - - T_0 = 0.5 * k1ox; - T3 = Vgs_eff - Vfbeff - VbseffCV - Vgsteff; - - if (k1ox == 0.0) - begin - T1 = 0.0; - T2 = 0.0; - end - else if (T3 < 0.0) - begin - T1 = T_0 + T3 / k1ox; - T2 = CoxWL; - end - else - begin - T1 = sqrt(T_0 * T_0 + T3); - T2 = CoxWL * T_0 / T1; - end - - Qsub0 = CoxWL * k1ox * (T1 - T_0); - - AbulkCV = Abulk0 * abulkCVfactor; - VdsatCV = Vgsteff / AbulkCV; - - V4 = VdsatCV - Vds - `DELTA_4; - T_0 = sqrt(V4 * V4 + 4.0 * `DELTA_4 * VdsatCV); - VdseffCV = VdsatCV - 0.5 * (V4 + T_0); - - /* Added to eliminate non-zero VdseffCV at Vds=0.0 */ - if ((Vds == 0.0) && (VERSION == 3.24)) - VdseffCV = 0.0; - - T_0 = AbulkCV * VdseffCV; - T1 = 12.0 * (Vgsteff - 0.5 * T_0 + 1e-20); - T2 = VdseffCV / T1; - T3 = T_0 * T2; - - T4 = (1.0 - 12.0 * T2 * T2 * AbulkCV); - T5 = (6.0 * T_0 * (4.0 * Vgsteff - T_0) / (T1 * T1) - 0.5); - T6 = 12.0 * T2 * T2 * Vgsteff; - - qinoi = -CoxWL * (Vgsteff - 0.5 * T_0 + AbulkCV * T3); - qgate = CoxWL * (Vgsteff - 0.5 * VdseffCV + T3); - - T7 = 1.0 - AbulkCV; - qbulk = CoxWL * T7 * (0.5 * VdseffCV - T3); - - if (XPART > 0.5) - begin /* 0/100 Charge petition model */ - qsrc = -CoxWL * (0.5 * Vgsteff + 0.25 * T_0 - T_0 * T_0 / (T1 + T1)); - end - else if (XPART < 0.5) - begin /* 40/60 Charge petition model */ - T2 = 0.5 * CoxWL / (T1 / 12.0 * T1 / 12.0); - T3 = Vgsteff * (2.0 * T_0 * T_0 / 3.0 + Vgsteff * (Vgsteff - 4.0 * T_0 / 3.0)) - - 2.0 * T_0 * T_0 * T_0 / 15.0; - qsrc = -T2 * T3; - end - else - begin /* 50/50 Charge petition model */ - qsrc = -0.5 * (qgate + qbulk); - end - - qgate = qgate + Qac0 + Qsub0; - qbulk = qbulk - (Qac0 + Qsub0); - qdrn = -(qgate + qbulk + qsrc); - - qinv = qinoi; - end - /* New Charge-Thickness capMod (CTM) begins - Weidong 7/1997 */ - else if (CAPMOD == 3) - begin - V3 = vfbzb - Vgs_eff + VbseffCV - `DELTA_3; - - if (vfbzb <= 0.0) - begin - T_0 = sqrt(V3 * V3 - 4.0 * `DELTA_3 * vfbzb); - T2 = -`DELTA_3 / T_0; - end - else - begin - T_0 = sqrt(V3 * V3 + 4.0 * `DELTA_3 * vfbzb); - T2 = `DELTA_3 / T_0; - end - - T1 = 0.5 * (1.0 + V3 / T_0); - Vfbeff = vfbzb - 0.5 * (V3 + T_0); - - Cox = cox; - Tox = 1.0e8 * tox; - T_0 = (Vgs_eff - VbseffCV - vfbzb) / Tox; - - tmp = T_0 * acde; - - if ((-`EXP_THRESHOLD < tmp) && (tmp < `EXP_THRESHOLD)) - Tcen = ldeb * exp(tmp); - else if (tmp <= -`EXP_THRESHOLD) - Tcen = ldeb * `MIN_EXP; - else - Tcen = ldeb * `MAX_EXP; - - LINK = 1.0e-3 * tox; - V3 = ldeb - Tcen - LINK; - V4 = sqrt(V3 * V3 + 4.0 * LINK * ldeb); - Tcen = ldeb - 0.5 * (V3 + V4); - T1 = 0.5 * (1.0 + V3 / V4); - - Ccen = `EPSSI / Tcen; - T2 = Cox / (Cox + Ccen); - Coxeff = T2 * Ccen; - T3 = -Ccen / Tcen; - CoxWLcen = CoxWL * Coxeff / Cox; - - Qac0 = CoxWLcen * (Vfbeff - vfbzb); - - T_0 = 0.5 * k1ox; - T3 = Vgs_eff - Vfbeff - VbseffCV - Vgsteff; - - if (k1ox == 0.0) - begin - T1 = 0.0; - T2 = 0.0; - end - else if (T3 < 0.0) - begin - T1 = T_0 + T3 / k1ox; - T2 = CoxWLcen; - end - else - begin - T1 = sqrt(T_0 * T_0 + T3); - T2 = CoxWLcen * T_0 / T1; - end - - Qsub0 = CoxWLcen * k1ox * (T1 - T_0); - - /* Gate-bias dependent delta Phis begins */ - if (k1ox <= 0.0) - begin - Denomi = 0.25 * moin * Vtm; - T_0 = 0.5 * sqrtPhi; - end - else - begin - Denomi = moin * Vtm * k1ox * k1ox; - T_0 = k1ox * sqrtPhi; - end - - T1 = 2.0 * T_0 + Vgsteff; - - DeltaPhi = Vtm * ln(1.0 + T1 * Vgsteff / Denomi); - /* End of delta Phis */ - - T3 = 4.0 * (Vth - vfbzb - phi); - Tox2 = Tox + Tox; - - if (T3 >= 0.0) - T_0 = (Vgsteff + T3) / Tox2; - else - T_0 = (Vgsteff + 1.0e-20) / Tox2; - - tmp = exp(0.7 * ln(T_0)); - T1 = 1.0 + tmp; - T2 = 0.7 * tmp / (T_0 * Tox2); - Tcen = 1.9e-9 / T1; - - Ccen = `EPSSI / Tcen; - T_0 = Cox / (Cox + Ccen); - Coxeff = T_0 * Ccen; - T1 = -Ccen / Tcen; - CoxWLcen = CoxWL * Coxeff / Cox; - - AbulkCV = Abulk0 * abulkCVfactor; - VdsatCV = (Vgsteff - DeltaPhi) / AbulkCV; - V4 = VdsatCV - Vds - `DELTA_4; - T_0 = sqrt(V4 * V4 + 4.0 * `DELTA_4 * VdsatCV); - VdseffCV = VdsatCV - 0.5 * (V4 + T_0); - T1 = 0.5 * (1.0 + V4 / T_0); - T2 = `DELTA_4 / T_0; - T3 = (1.0 - T1 - T2) / AbulkCV; - - if ((Vds == 0.0) && (VERSION == 3.24)) - VdseffCV = 0.0; - - T_0 = AbulkCV * VdseffCV; - T1 = Vgsteff - DeltaPhi; - T2 = 12.0 * (T1 - 0.5 * T_0 + 1.0e-20); - T3 = T_0 / T2; - T4 = 1.0 - 12.0 * T3 * T3; - T5 = AbulkCV * (6.0 * T_0 * (4.0 * T1 - T_0) / (T2 * T2) - 0.5); - T6 = T5 * VdseffCV / AbulkCV; - - qinoi = CoxWLcen * (T1 - T_0 * (0.5 - T3)); - qgate = qinoi; - - T7 = 1.0 - AbulkCV; - - qbulk = CoxWLcen * T7 * (0.5 * VdseffCV - T_0 * VdseffCV / T2); - - if (XPART > 0.5) - begin /* 0/100 partition */ - qsrc = -CoxWLcen * (T1 / 2.0 + T_0 / 4.0 - 0.5 * T_0 * T_0 / T2); - end - else if (XPART < 0.5) - begin /* 40/60 partition */ - T2 = T2 / 12.0; - T3 = 0.5 * CoxWLcen / (T2 * T2); - T4 = T1 * (2.0 * T_0 * T_0 / 3.0 + T1 - * (T1 - 4.0 * T_0 / 3.0)) - 2.0 * T_0 * T_0 * T_0 / 15.0; - qsrc = -T3 * T4; - end - else - begin /* 50/50 partition */ - qsrc = -0.5 * qgate; - end - - qgate = qgate + Qac0 + Qsub0 - qbulk; - qbulk = qbulk - (Qac0 + Qsub0); - qdrn = -(qgate + qbulk + qsrc); - - qinv = -qinoi; - end /* End of CTM */ - end - // *** end of intrinsic charge calculation *** - -`ifdef NQSMOD - /* NQS (Mansun 11/1993) modified by Weidong & Min-Chie 1997-1998 */ - if (NQSMOD) - begin - qcheq = -(qbulk + qgate); - - gtau_drift = abs(tconst * qcheq) * ScalingFactor; - gtau_diff = 16.0 * u0temp * vtm / (leffCV * leffCV) * ScalingFactor; - - gtau = gtau_drift + gtau_diff; - end -`endif - - qgdo = 0.0; - qgso = 0.0; - - // *** overlap capacitance charge calculation *** - if (CAPMOD == 0.0) - begin - qgdo = cgdo_param * vgd; - qgso = cgso_param * vgs; - end - else if (CAPMOD == 1.0) - begin - if (vgd < 0.0) - begin - T1 = sqrt(1.0 - 4.0 * vgd / ckappa); - qgdo = cgdo_param * vgd - weffCV * 0.5 * cgdl * ckappa * (T1 - 1.0); - end - else - begin - qgdo = (weffCV * cgdl + cgdo_param) * vgd; - end - - if (vgs < 0.0) - begin - T1 = sqrt(1.0 - 4.0 * vgs / ckappa); - qgso = cgso_param * vgs - weffCV * 0.5 * cgsl * ckappa * (T1 - 1.0); - end - else - begin - qgso = (weffCV * cgsl + cgso_param) * vgs; - end - end - else - begin - T_0 = vgd + `DELTA_1; - T1 = sqrt(T_0 * T_0 + 4.0 * `DELTA_1); - T2 = 0.5 * (T_0 - T1); - - T3 = weffCV * cgdl; - T4 = sqrt(1.0 - 4.0 * T2 / ckappa); - qgdo = (cgdo_param + T3) * vgd - T3 * (T2 + 0.5 * ckappa * (T4 - 1.0)); - - T_0 = vgs + `DELTA_1; - T1 = sqrt(T_0 * T_0 + 4.0 * `DELTA_1); - T2 = 0.5 * (T_0 - T1); - T3 = weffCV * cgsl; - T4 = sqrt(1.0 - 4.0 * T2 / ckappa); - qgso = (cgso_param + T3) * vgs - T3 * (T2 + 0.5 * ckappa * (T4 - 1.0)); - end - - // Add Overlap capacitance charges contribution to total node charge - // according to mode and NQS model - if (mode > 0) - begin - if (NQSMOD == 0) - begin - qgd = qgdo; - qgs = qgso; - qgb = cgbo_param * vgb; - - qgate = qgate + qgd + qgs + qgb; - qbulk = qbulk - qgb; - qdrn = qdrn - qgd; - qsrc = -(qgate + qbulk + qdrn); - -`ifdef NQSMOD - sxpart = 0.6; - dxpart = 0.4; -`endif - end // if (NQSMOD == 0) - else - begin - CoxWL = cox * weffCV * leffCV; - -`ifdef NQSMOD - if ( abs(qcheq) <= 1.0e-5 * CoxWL ) - begin - if (XPART < 0.5) - dxpart = 0.4; - else if (XPART > 0.5) - dxpart = 0.0; - else - dxpart = 0.5; - end - else - dxpart = qdrn / qcheq; - - sxpart = 1.0 - dxpart; -`endif - - qgd = qgdo; - qgs = qgso; - qgb = cgbo_param * vgb; - - qgate = qgd + qgs + qgb; - qbulk = -qgb; - qdrn = -qgd; - qsrc = -(qgate + qbulk + qdrn); - end - end // if (mode > 0) - else - begin - if (NQSMOD == 0) - begin - qgd = qgdo; - qgs = qgso; - qgb = cgbo_param * vgb; - - qgate = qgate + qgd + qgs + qgb; - qbulk = qbulk - qgb; - qsrc = qdrn - qgs; - qdrn = -(qgate + qbulk + qsrc); - -`ifdef NQSMOD - sxpart = 0.4; - dxpart = 0.6; -`endif - end // if (NQSMOD == 0) - else - begin - CoxWL = cox * weffCV * leffCV; - -`ifdef NQSMOD - if ( abs(qcheq) <= 1.0e-5 * CoxWL ) - begin - if (XPART < 0.5) - sxpart = 0.4; - else if (XPART > 0.5) - sxpart = 0.0; - else - sxpart = 0.5; - end - else - sxpart = qdrn / qcheq; - - dxpart = 1.0 - sxpart; -`endif - - qgd = qgdo; - qgs = qgso; - qgb = cgbo_param * vgb; - - qgate = qgd + qgs + qgb; - qbulk = -qgb; - qsrc = -qgs; - qdrn = -(qgate + qbulk + qsrc); - end - end - -`ifdef NQSMOD - if (NQSMOD) - begin - qcdump = qdef * ScalingFactor; - - cqdef = ddt(qcdump); - cqcheq = ddt(qcheq); - end - - if (analysis("static")) - begin - dxpart = (mode > 0) ? 0.4 : 0.6; - sxpart = 1.0 - dxpart; - - if (NQSMOD) - gtau = 16.0 * u0temp * vtm / leffCV / leffCV * ScalingFactor; - else - gtau = 0.0; - end -`endif - - // Add depletion capacitance charge contribution - Qdrn = qdrn - qbd; - Qsrc = qsrc - qbs; - Qbulk = qbulk + qbd + qbs; - Qgate = qgate; - - if (mode > 0) - begin - I(drainp, sourcep) <+ TYPE * cdrain; - I(bulk, drainp) <+ TYPE * (cbd - csub); - I(bulk, sourcep) <+ TYPE * cbs; - end - else - begin - I(drainp, sourcep) <+ TYPE * (-cdrain); - I(bulk, drainp) <+ TYPE * cbd; - I(bulk, sourcep) <+ TYPE * (cbs - csub); - end - - // Process drain/source resistance - if ( drainConductance > 0.0 ) - I(drain, drainp) <+ drainConductance * V(drain, drainp); - else -// V(drain, drainp) <+ 0.0; // Changed to compile with ADMS 2.30, MEB. - I(drain, drainp) <+ V(drain, drainp)*1e3; // 1m Ohm connection. - if ( sourceConductance > 0.0 ) - I(source, sourcep) <+ sourceConductance * V(source, sourcep); - else -// V(source, sourcep) <+ 0.0; // Changed to compile with ADMS 2.30, MEB. - I(source, sourcep) <+ V(source, sourcep)*1e3; // 1m Ohm connection. - - // Charge current including overlap and depletion capacitance contribution - cqgate = TYPE * ddt(Qgate); - cqdrn = TYPE * ddt(Qdrn); - cqbulk = TYPE * ddt(Qbulk); - - I(gate) <+ TYPE * ddt(Qgate); // Changed to compile with ADMS 2.30, MEB. - I(drainp) <+ TYPE * ddt(Qdrn); - I(bulk) <+ TYPE * ddt(Qbulk); - I(sourcep) <+ -( (TYPE * ddt(Qgate)) + (TYPE * ddt(Qdrn)) + (TYPE * ddt(Qbulk)) ); // -(cqgate + cqdrn + cqbulk); -// -// Noise addeed to Qucs ADMS 2/.30 port, May 2013 M.E. Brinson. -// Basic noise implementation for NOIMOD = 4. -// - if (NOIMOD == 4) - begin - fourkt = 5.5226012e-23*Temp; - leffx2 = leff*leff; - I(drainp, sourcep) <+ flicker_noise( (KF*pow(cdrain, AF)) / (cox*leffx2), EF, "flicker" ); - I(drainp, sourcep) <+ white_noise( (fourkt*ueff*abs(qinv)) / leffx2, "channel" ); - I(drain, drainp) <+ white_noise( abs(fourkt*drainConductance), "thermal" ); - I(sourcep, source) <+ white_noise( abs(fourkt*sourceConductance), "thermal" ); - end - -`ifdef NQSMOD - if (NQSMOD) - begin - I(gate) <+ TYPE * (-1) * qdef * gtau; - I(drainp) <+ TYPE * dxpart * qdef * gtau; - I(sourcep) <+ TYPE * sxpart * qdef * gtau; - - I(q) <+ -TYPE * ( cqdef - cqcheq ); - I(q) <+ -V(q) * gtau; - end - else - begin - I(q) <+ GMIN * qdef; - end -`endif - - end // analog begin - -endmodule diff --git a/qucs-core/src/components/verilog/bsim4v30nMOS.va b/qucs-core/src/components/verilog/bsim4v30nMOS.va deleted file mode 100644 index cd36179573..0000000000 --- a/qucs-core/src/components/verilog/bsim4v30nMOS.va +++ /dev/null @@ -1,4496 +0,0 @@ -/*****************************************************************/ -/* Berkeley BSIM4.3.0 Verilog-A model */ -/*****************************************************************/ -// UPDATED March 8,19 2004 -// Contributed By: -// Geoffrey Coram, Ph.D Senior CAD Engineer Analog Devices, Inc. -// -// Qucs port of BSIM4v30 Mike Brinson, May 2013. -// Open source Verilog-A code can be found at: -// "Silvaco Offers Free Open-Source Verilog-A Device Models": -// http://www.silvaco.com/news/pressreleases/2004_03_02_01.html -// https://dynamic.silvaco.com/dynamicweb/jsp/downloads/EntryAction.do?action=silen-menu&key=2206&format=22 -// -// Technical details of the BSIM4.3.4 compact device model can be found at: -// William Liu, "MOSFET Models for SPICE Simulation including BSIM3v3 and BSIM4", -// Wiley _Interscience, John Wiley & Sons Inc., New York, 2001. -// ISBN: 0-471-9697-4. -// -// Changes to original code needed to compile with ADMS 2.30/Qucs are marked below. -// - -`define VOLTAGE_MAXDELTA 0.3 - -//`include "discipline.h" Changed MEB -`include "discipline.vams" - -// The following line must be uncommented if RGATEMOD parameter is 3. -//`define RGATE3 -// The following line must be uncommented if RBODYMOD parameter is set to 1. -//`define RBODY - - -//****** Physical constants ******// -`define EPS0 8.85418e-12 -`define KboQ 8.617087e-5 -`define EPSSI 1.03594e-10 -`define Charge_q 1.60219e-19 -`define Charge 1.6021918e-19 - -//****** Mathematical constants and constants of limitation ******// -`define PI 3.141592654 -`define EXP_THRESHOLD 34.0 -`define MIN_EXP 1.713908431e-15 -`define MAX_EXP 5.834617425e14 - -//****** Constants for the model ******// -`define MM 3 -`define DELTA 1.0e-9 -`define DELTA_1 0.02 -`define DELTA_3 0.02 -`define DELTA_4 0.02 - - -//****** Beginning of the model ******// -module bsim4v30nMOS(drain, gate, source, bulk); - inout drain, gate, source, bulk; - electrical drain, gate, source, bulk; // External nodes - electrical drainp, sourcep; // Internal nodes for rdsmod - electrical gatep, gatem; // Internal nodes for rgatemod - electrical drainb, sourceb, bulkp; // Internal nodes for rbodymod - - - //****** Definition of all instance and model parameters *****// - //****** To customize your model to fit your device, just*****// - //****** modify those parameters in your modelcard *****// - //****** -99.0 is used for parameters which are *****// - //****** calculated if you don't determine them *****// - - //****** Minimum conductance ******// - parameter GMIN = 1e-12; - - //****** Geometrical Parameters ******// - parameter PS = 12e-6; - parameter PD = 12e-6; - parameter AS = 12e-12; - parameter AD = 12e-12; - - //****** Overlap Capacitance Parameters ******// - parameter CGBO = -99.0; // Gate-bulk overlap capacitance per length - parameter CGDO = -99.0; // Gate-drain overlap capacitance per width - parameter CGSO = -99.0; // Gate-source overlap capacitance per width - - //****** Mosfet type ******// - // parameter TYPE = 1; // Type = TYPE = NMOS - - //****** Parameters L and W ******// - parameter L = 3e-6; // Length - parameter W = 6e-6; // Width - - //****** Model Selectors/Controllers ******// // Parameter name changes MEB - parameter MOBMOD = -99.0; // Mobility model selector - parameter RDSMOD = -99.0; // Bias-dependent source/drain resistance model selector - parameter IGCMOD = 0; // Gate-to-channel tunneling current model selector - parameter IGBMOD = 0; // Gate-to-substrate tunneling current model selector - parameter CAPMOD = 2; // Capacitance model selector - parameter RGATEMOD = 2; // Gate resistance model selector - parameter RBODYMOD = 0; // Substrate resistance network model selector - parameter DIOMOD = 1; // Source/drain junction diode IV model selctor - parameter TEMPMOD = -99.0; // Temperature mode selector - parameter GEOMOD = 0; // Geometry-dependent parasitics model selector - parameter RGEOMOD = 0; // Source/drain diffusion resistance and contact model selector - parameter PERMOD = 1; // - parameter TNOIMOD = 0; // Thermal noise model selector = 0 BSIM 3 model // Added MEB - parameter FNOIMOD = 0; // Flicker noise model selector = 0 simple flicker model // Added MEB - - //****** Process Parameters ******// - parameter EPSROX = 3.9; // Gate dielctric constant relative to vacuum - parameter TOXE = -99.0; // Electrical gate equivalent oxide thickness - parameter TOXP = -99.0; // = TOXE Physical gate equivalent oxide thickness - parameter TOXM = -99.0; // = TOXE Tox at which parameters are extracted - parameter DTOX = 0.0; // Defined as TOXE-TOXP - parameter XJ = 1.5e-7; // S/D junction depth - parameter GAMMA1 = -99.0; // Body-effect coefficient near the surface - parameter GAMMA2 = -99.0; // Body-effect coefficient in the bulk - parameter NDEP = -99.0; // Channel doping concentration at depletion edge for zero body bias - parameter NSUB = 6.0e16; // Substrate doping concentration - parameter NGATE = 0.0; // Poly Si gate doping concentration - parameter NSD = 1.0e20; // S/D doping concentration - parameter VBX = -99.0; // Vbs at which the depletion region width equals XT - parameter XT = 1.55e-7; // Doping depth - parameter RSH = 0.0; // S/D sheet resistance - parameter RSHG = 0.0; // Gate electrode sheet resistance - - //****** Basic Parameters ******// - parameter VTH0 = 0.6; // Long-channel threshold voltage at Vbs=0 - parameter VFB = -99.0; // Flat-band voltage - parameter PHIN = 0.0; // Non-uniform vertical doping effect on surface potential - parameter K1 = -99.0; // First-order body bias coefficient - parameter K2 = -99.0; // Second-order body bias coefficient - parameter K3 = 80.0; // Narrow width coefficient - parameter K3B = 0.0; // Body effect coefficient of K3 - parameter W0 = 2.5e-6; // Narrow width parameter - parameter LPE0 = 1.74e-7; // Lateral non-uniform doping parameter at Vbs=0 - parameter LPEB = 0.0; // Lateral non-uniform doping effect on K1 - parameter VBM = -3.0; // Maximum applied body bias in VTH0 calculation - parameter DVT0 = 2.2; // First coefficient of short-channel effect on Vth - parameter DVT1 = 0.53; // Second coefficient of short-channel effect on Vth - parameter DVT2 = -0.032; // Body-bias coefficient of short-channel effect on Vth - parameter DVTP0 = 0.0; // First coefficient of drain-induced Vth shift due to for long-channel pocket devices - parameter DVTP1 = 0.0; // Second coefficient of drain-induced Vth shift due to for long-channel pocket devices - parameter DVT0W = 0.0; // First coefficient of narrow width effect on Vth for small channel length - parameter DVT1W = 5.3e6; // Second coefficient of narrow width effect on Vth for small channel length - parameter DVT2W = -0.032; // Body-bias coefficient of narrow width effect on Vth for small channel length - parameter U0 = -99.0; // Low-field mobility - parameter UA = -99.0; // Coefficient of first-order mobility degradation due to vertical field - parameter UB = 1.0e-19; // Coefficient of second-order mobility degradation due to vertical field - parameter UC = -99.0; // Coefficient of mobility degradation due to body-bias effect - parameter EU = -99.0; // Exponent for mobility degradation of MOBMOD=2 - parameter VSAT = 8.0e4; // Saturation velocity - parameter A0 = 1.0; // Coefficient of channel-length dependence of bulk charge effect - parameter AGS = 0.0; // Coefficient of Vgs dependence of bulk charge effect - parameter B0 = 0.0; // Bulk charge effect coefficient for channel width - parameter B1 = 0.0; // Bulk charge effect width offset - parameter KETA = -0.047; // Body-bias coefficient of bulk charge effect - parameter A1 = 0.0; // First non-saturation effect parameter - parameter A2 = 1.0; // Second non-saturation factor - parameter WINT = 0.0; // Channel-width offset parameter - parameter LINT = 0.0; // Channel-length offset parameter - parameter DWG = 0.0; // Coefficient of gate bias dependence of Weff - parameter DWB = 0.0; // Coefficient of body bias dependence of Weff - parameter VOFF = -0.08; // Offset voltage in subthreshold region for large W and L - parameter VOFFL = 0.0; // Channel-length dependence of VOFF - parameter MINV = 0.0; // Vgsteff fitting parameter for moderate inversion condition - parameter NFACTOR = 1.0; // Subthreshold swing factor - parameter ETA0 = 0.08; // DIBL coefficient in subthreshold region - parameter ETAB = -0.07; // Body-bias coefficient for the subthreshold DIBL effect - parameter DROUT = 0.56; // Channel-length dependence of DIBL effect on Rout - parameter DSUB = 0.56; // = DROUT DIBL coefficient exponent in subthreshold region - parameter CIT = 0.0; // Interface trap capacitance - parameter CDSC = 2.4e-4; // Coupling cpacitance between S/D and channel - parameter CDSCB = 0.0; // Body-bias sensivity of CDSC - parameter CDSCD = 0.0; // Drain-bias sensivity of CDSC - parameter PCLM = 1.3; // Channel-length modulation parameter - parameter PDIBL1 = 0.39; // Parameter for DIBL effect on Rout - parameter PDIBL2 = 0.0086; // Parameter for DIBL effect on Rout - parameter PDIBLB = 0.0; // Body-bias coefficient of DIBL effect on Rout - parameter PSCBE1 = 4.24e8; // First substrate current induced body-effect parameter - parameter PSCBE2 = 1.0e-5; // Second substrate current induced body-effect parameter - parameter PVAG = 0.0; // Gate-bias dependence of Early voltage - parameter DELTA = 0.01; // Parameter for DC Vdseff - parameter FPROUT = 0.0; // Effect of pocket implant on Rout degradation - parameter PDITS = 0.0; // Impact of drain-induced Vth shift on Rout - parameter PDITSD = 0.0; // Vds dependence of drain-induced Vth shift for Rout - parameter PDITSL = 0.0; // Channel-length dependence of drain-induced Vth shift for Rout - parameter LAMBDA = -99.0; // Velocity overshoot coefficient - parameter VTL = -99.0; // Thermal velocity - parameter LC = 5.0e-9; // Velocity back scattering coefficient - parameter XN = 3.0; // Velocity back scattering coefficient - - //****** Assymetric and Bias-Dependent Rds Model Parameters ******// - parameter RDSW = 200.0; // Zero bias LDD resistance per unit width for RDSMOD=0 - parameter RDSWMIN = 0.0; // LDD resistance per unit width at high Vgs and zero Vbs for RDSMOD=0 - parameter RDW = 100.0; // Zero bias lightly-doped drain resistance Rd per unit width for RDSMOD=1 - parameter RDWMIN = 0.0; // Lightly-doped drain resistance Rd per unit width at high Vgs and zero Vbs for RDSMOD=1 - parameter RSW = 100.0; // Zero bias lightly-doped source resistance Rd per unit width for RDSMOD=1 - parameter RSWMIN = 0.0; // Lightly-doped source resistance Rd per unit width at high Vgs and zero Vbs for RDSMOD=1 - parameter PRWG = 1.0; // Gate-bias dependence of LDD resistance - parameter PRWB = 0.0; // Body-bias dependence of LDD resistance - parameter WR = 1.0; // Channel-width dependence parameter of LDD resistance - parameter NRS = -99.0; // Number of source diffusion squares - parameter NRD = -99.0; // Number of drain diffusion squares - - //****** Impact Ionization Current Model Parameters ******// - parameter ALPHA0 = 0.0; // First parameter of impact ionization current - parameter ALPHA1 = 0.0; // Isub parameter length scaling - parameter BETA0 = 30.0; // Second parameter of impact ionization current - - //****** Gate Induced Drain Leakage Model Parameters ******// - parameter AGIDL = 0.0; // Pre-exponential coefficient for GIDL - parameter BGIDL = 2.3e9; // Exponential coefficient for GIDL - parameter CGIDL = 0.5; // Parameter for body-bias effect on GIDL - parameter EGIDL = 0.8; // Fitting parameter for band bending for GIDL - - //****** Gate Dielectric Tunneling Current Model Parameters ******// - parameter AIGBACC = 0.43; // Parameter for Igb in accumulation - parameter BIGBACC = 0.054; // Parameter for Igb in accumulation - parameter CIGBACC = 0.075; // Parameter for Igb in accumulation - parameter NIGBACC = 1.0; // Parameter for Igb in accumulation - parameter AIGBINV = 0.35; // Parameter for Igb in inversion - parameter BIGBINV = 0.03; // Parameter for Igb in inversion - parameter CIGBINV = 0.006; // Parameter for Igb in inversion - parameter EIGBINV = 1.1; // Parameter for Igb in inversion - parameter NIGBINV = 3.0; // Parameter for Igb in inversion - parameter AIGC = -99.0; // Parameter for Igcs and Igcd - parameter BIGC = -99.0; // Parameter for Igcs and Igcd - parameter CIGC = -99.0; // Parameter for Igcs and Igcd - parameter AIGSD = -99.0; // Parameter for Igs and Igd - parameter BIGSD = -99.0; // Parameter for Igs and Igd - parameter CIGSD = -99.0; // Parameter for Igs and Igd - parameter DLCIG = 0.0; // = LINT S/D overlap length for Igs and Igd - parameter NIGC = 1.0; // Parameter for Igcs, Igcd, Igs and Igd - parameter POXEDGE = 1.0; // Factor for the gate oxide thickness in S/D overlap regions - parameter PIGCD = 1.0; // Vds dependence of Igcs and Igcd - parameter NTOX = 1.0; // Exponent for the gate oxide ratio - parameter TOXREF = 3.0e-9; // Nominal gate oxide thickness for gate dielectric tunneling current model only - - //****** Charge and Capacitance Model Parameters ******// - parameter XPART = 0.4; // Charge partition parameter - parameter CGS0 = 0.0; // Non LDD region source-gate overlap capacitance per unit channel width - parameter CGD0 = 0.0; // Non LDD region drain-gate overlap capacitance per unit channel width - parameter CGB0 = 0.0; // Gate-bulk overlap capcitance per unit channel length - parameter CGSL = 0.0; // Overlap capacitance between gate and lightly-doped source region - parameter CGDL = 0.0; // Overlap capacitance between gate and lightly-doped source region - parameter CKAPPAS = 0.6; // Coefficient of bias-dependent overlap capacitance for the source side - parameter CKAPPAD = 0.6; // = CKAPPAS Coefficient of bias-dependent overlap capacitance for the drain side - parameter CF = -99.0; // Fringing field capacitance - parameter CLC = 1.0e-7; // Constant term for the short channel model - parameter CLE = 0.6; // Exponential term for the short channel model - parameter DLC = 0.0; // = LINT Channel-length offset parameter for CV model - parameter DWC = 0.0; // = WINT Channel-width offset parameter for CV model - parameter VFBCV = -1.0; // Flat-band voltage parameter - parameter NOFF = 1.0; // CV parameter in Vgstett,CV for weak to strong inversion - parameter VOFFCV = 0.0; // CV parameter in Vgstett,CV for weak to strong inversion - parameter ACDE = 1.0; // Exponential coefficient for charge thickness in CAPMOD=2 for accumulation and depletion regions - parameter MOIN = 15.0; // Coefficient for the gate-bias dependent surface potential - - //****** High-Speed/RF Model Parameters ******// - parameter XRCRG1 = 12.0; // Parameter for distributed channel-resistance effect for intrinsic-input resistance - parameter XRCRG2 = 1.0; // Parameter to account for the excess channel diffusion resistance - parameter RBPB = 50.0; // Resistance connected between bNodePrime and bNode - parameter RBPD = 50.0; // Resistance connected between bNodePrime and dbNode - parameter RBPS = 50.0; // Resistance connected between bNodePrime and sbNode - parameter RBDB = 50.0; // Resistance connected between dbNodePrime and bNode - parameter RBSB = 50.0; // Resistance connected between sbNodePrime and bNode - parameter GBMIN = 1.0e-12; // Conductance in parallel with each of the five substrate resistances to avoid potential numerical instability - - //****** Layout-Dependent Parasistics Model Parameters ******// - parameter DMCG = 0.0; // Distance from S/D contact center to the gate edge - parameter DMCI = 0.0; // = DMCG Distance from S/D contact center to the isolation edge in the channel-length direction - parameter DMDG = 0.0; // Same as DMCG but for merged device only - parameter DMCGT = 0.0; // DMCG of test structures - parameter NF = 1.0; // Number of device fingers - parameter DWJ = 0.0; // = DWC Offset of the S/D junction width - parameter MIN = 0.0; // Whether to minimize the number of drain or source diffusions for even-number fingered device - parameter XGW = 0.0; // Distance from the gate contact to the channel edge - parameter XGL = 0.0; // Offset of the gate length due to variations in patterning - parameter XL = 0.0; // Channel length offset due to mask/etch effect - parameter XW = 0.0; // Channel width offset due to mask/etch effect - parameter NGCON = 1.0; // Number of gate contacts - - //****** Assymetric Source/Drain Junction Diode Model Parameters ******// - parameter IJTHSREV = 0.1; // Limiting current in reverse bias region - parameter IJTHDREV = 0.1; // = IJTHSREV Idem - parameter IJTHSFWD = 0.1; // Limiting current in forward bias region - parameter IJTHDFWD = 0.1; // = IJTHSFWD Idem - parameter XJBVS = 1.0; // Fitting parameter for diode breakdown - parameter XJBVD = 1.0; // = XJBVS Idem - parameter BVS = 10.0; // Breakdown voltage - parameter BVD = 10.0; // = BVS Idem - parameter JSS = 1.0e-4; // Bottom junction reverse saturation current density - parameter JSD = 1.0e-4; // = JSS Idem - parameter JSWS = 0.0; // Isolation-edge sidewall reverse saturation current density - parameter JSWD = 0.0; // = JSWS Idem - parameter JSWGS = 0.0; // Gate-edge sidewall reverse saturation current density - parameter JSWGD = 0.0; // = JSWGS Idem - parameter CJS = 5.0e-4; // Bottom junction capacitance per unit area at zero bias - parameter CJD = 5.0e-4; // = CJS Idem - parameter MJS = 0.5; // Bottom junction capacitance grating coefficient - parameter MJD = 0.5; // = MJS Idem - parameter MJSWS = 0.33; // Isolation-edge sidewall junction capacitance grading coefficient - parameter MJSWD = 0.33; // = MJSWS Idem - parameter CJSWS = 5.0e-10; // Isolation-edge sidewall junction capacitance per unit area - parameter CJSWD = 5.0e-10; // = CJSWS Idem - parameter CJSWGS = 5.0e-10; // = CJSWS Gate-edge sidewall junction capacitance per unit length - parameter CJSWGD = 5.0e-10; // = CJSWS Idem - parameter MJSWGS = 0.33; // = MJSWS Gate-edge sidewall junction capacitance grading coefficient - parameter MJSWGD = 0.33; // = MJSWS Idem - parameter PBS = 1.0; // Bottom junction built-in potential - parameter PBD = 1.0; // = PBS Idem - parameter PBSWS = 1.0; // Isoaltion-edge sidewall junction built-in potential - parameter PBSWD = 1.0; // = PBSWS Idem - parameter PBSWGS = 1.0; // = PBSWS Gare-edge sidewall junction built-in potential - parameter PBSWGD = 1.0; // = PBSWS Idem - - //****** Temperature Dependence Parameters ******// - parameter TNOM = 27; // Temperature at which parameters are extracted - parameter UTE = -1.5; // Mobility temperature exponent - parameter KT1 = -0.11; // Tempertature coefficient for threshold voltage - parameter KT1L = 0.0; // Channel length dependence of the temperature coefficient for threshold voltage - parameter KT2 = 0.022; // Body-bias coefficient of Vth temperature effect - parameter UA1 = 1.0e-9; // Temperature coefficient for UA - parameter UB1 = -1.0e-18; // Temperature coefficient for UB - parameter UC1 = -99.0; // Temperature coefficient for UC - parameter AT = 3.3e4; // Temperature coefficient for saturation velocity - parameter PRT = 0.0; // Temperature coefficient for Rdsw - parameter NJS = 1.0; // Emission coefficients of junction for drain and source jonctions - parameter NJD = 1.0; // = NJS Idem - parameter XTIS = 3.0; // Junction current temperature exponents for source and drain junctions - parameter XTID = 3.0; // = XTTS Idem - parameter TPB = 0.0; // Temperature coefficient of PB - parameter TPBSW = 0.0; // Temperature coefficient of PBSW - parameter TPBSWG = 0.0; // Temperature coefficient of PBSWG - parameter TCJ = 0.0; // Temperature coefficient of CJ - parameter TCJSW = 0.0; // Temperature coefficient of CJSW - parameter TCJSWG = 0.0; // Temperature coefficient of CJSWG - - //****** Stress Effect Model Parameters ******// - parameter SA = 0.0; // Distance between OD edge to poly from one side - parameter SB = 0.0; // Distance between OD edge to poly from other side - parameter SD = 0.0; // Distance between neighbouring fingers - parameter SAREF = 1e-6; // Reference distance between OD and edge to poly of one side - parameter SBREF = 1e-6; // Reference distance between OD and edge to poly of the other side - parameter WLOD = 0.0; // Width parameter for stress effect - parameter KU0 = 0.0; // Mobility degradation/enhancement coefficient for stress effect - parameter KVSAT = 0.0; // Saturation velocity degradation/enhancement parameter for stress effect - parameter TKU0 = 0.0; // Temperature coefficient of KU0 - parameter LKU0 = 0.0; // Length dependence of KU0 - parameter WKU0 = 0.0; // Width dependence of KU0 - parameter PKU0 = 0.0; // - parameter LLODKU0 = 0.0; // Length parameter for U0 stress effect - parameter WLODKU0 = 0.0; // Width parameter for U0 stress effect - parameter KVTH0 = 0.0; // Threshold shift parameter for stress effect - parameter LKVTH0 = 0.0; // Length dependence of KVTH0 - parameter WKVTH0 = 0.0; // Width dependence of KVTH0 - parameter PKVTH0 = 0.0; // Cross-term dependence of KVTH0 - parameter LLODVTH = 0.0; // Length parameter for Vth stress effect - parameter WLODVTH = 0.0; // Width parameter for Vth stress effect - parameter STK2 = 0.0; // K2 shift factor related to VTH0 change - parameter LODK2 = 1.0; // K2 shift modification factor for stress effect - parameter STETA0 = 0.0; // ETA0 shift factor related to VTH0 change - parameter LODETA0 = 1.0; // ETA0 shift modification factor for stress effect - - //****** DW and DL Parameters ******// - parameter WL = 0.0; // Coefficient of length dependence for width offset - parameter WLN = 1.0; // Power of length dependence of width offset - parameter WW = 0.0; // Coefficient of width dependence for width offset - parameter WWN = 1.0; // Power of width dependence of width offset - parameter WWL = 0.0; // Coefficient of length and width cross-term dependence for width - parameter LL = 0.0; // Coefficient of length dependence for length offset - parameter LLN = 1.0; // Power of length dependence of length offset - parameter LW = 0.0; // Coefficient of width dependence for length offset - parameter LWN = 1.0; // Power of width dependence of length offset - parameter LWL = 0.0; // Coefficient of length and width cross-term dependence for length - parameter LLC = 0.0; // = LL Coefficient of length dependence for CV channel length offset - parameter LWC = 0.0; // = LW Coefficient of width dependence for CV channel length offset - parameter LWLC = 0.0; // = LWL Power of length and width cross-term dependence for CV channel length offset - parameter WLC = 0.0; // = WL Coefficient of length dependence for CV channel width offset - parameter WWC = 0.0; // = WW Coefficient of width dependence for CV channel width offset - parameter WWLC = 0.0; // = WWL Power of length and width cross-term dependence for CV channel width offset -//****** Noise parameters ***********// // Added MEB // - parameter NTNOI = 1.0; // Noise factor for short channel devices - used when TNOIMOD = 0 - parameter KF = 0.0; // - parameter AF = 1.0; // - parameter EF = 1.0; // - parameter TEMP = 27; // Circuit temperature - - - integer i; - real type, mode, gmin; - real t0, t1, t2, t3, t4, t5, t6, t7, t8, t9, t10, t11, t12, t13; - real tmp, tmp1, tmp2, tmp3, tmp4; - real mobmod, rdsmod, tempmod, rgatemod, permod, geomod, rgeomod; - real igcmod, igbmod, diomod, capmod, rbodymod; - real toxe, toxp, coxe, coxp, epsrox; - real tnom, vtm0, vtm, eg0, eg, ni; - real l, w, lnew, wnew, nf, xl, xw; - real ll, lw, lwl, lln, lwn, lint, dl, leff; - real wl, ww, wwl, wln, wwn, wint, dw, weff; - real gamma1, gamma2, ndep, nsub; - real phi, phin, sqrtphi, k3, vfbzb, w0, phis, sqrtphis; - real xj, nsd, xdep0, litl, vbi, vfbsd, ngate, xdep; - real cdep0, ntox, toxratio, toxratioedge, toxref, poxedge; - real mstar, voff, voffl, voffcbn, minv, ldeb; - real k1, k2, vbx, vbm, xt, vbsc, vfb, vth0, k1ox, k2ox, toxm; - real vtfbphi1, vtfbphi2, thetarout, dsub, theta0vb0; - real drout, pdibl1, pdibl2, factor1, dvt0w, dvt1w; - real dvt1, dvt0, lpe0, lpeb, kt1, kt1l, tratio; - real vgs, vds, vbs, Vds, Vbs, vses, vdes, vbd, vgd; - real vsbs, vdbd, vgb, vded, vgeg, vgmg, vgegm, vgmb; - real vbsb, vbdb, vbeb, vbes, vges, vgms, vdbs, vbesb, vbedb; - real vbseff, v0, dvt2, dvt2w, lt1, ltw, theta0, thetavth; - real delt_vth, kt2, vth_narroww, eta0, etab, ddibl_sft_dvd; - real dibl_sft, lpe_vb, vth, k3b, dvtp0, dvtp1, vcrit; - real cit, nfactor, cdsc, cdscb, cdscd, n; - real vgs_eff, vgd_eff, Vgs_eff, vgst, expvgst, vgsteff; - real Weff, dwg, dwb, weffcj, powweffwr, wr, ua, ua1, ub, ub1, uc, uc1; - real vsat, vsattemp, at, prt, rdw, rsw, rdwmin, rswmin; - real rdsw, rdswmin, deltemp, u0, u0temp, ute, eu; - real wlc, wwlc, wwc, dwj, rds0, rd0, rs0, rds; - real prwb, prwg, a0, ags, b0, b1, ueff; - real abulk, abulk0, dabulk_dvg, keta, denomi; - real wvcox, wvcoxrds, esat, esatl, a1, a2, Lambda; - real vgst2vtm, vdsat, delta, vdseff, diffvds; - real lambda, vasat, tcen, coxeff, coxeffwovl, beta; - real abovvgst2vtm, fgche1, fgche2, gche, idl; - real fprout, fp, pvag, pvagterm, pclm, cclm, vaclm; - real vadibl, pdiblb, va, pdits, pditsl, pditsd, vadits; - real pscbe1, pscbe2, vascbe, idsa, ids; - real alpha0, alpha1, beta0, isub, cdrain; - real vtl, vs, lc, xn, tfactor, fsevl; - real grgeltd, xgl, rshg, ngcon, xgw, xrcrg1, xrcrg2, gcrg; - real llodku0, wlod, w_tmp, wlodku0, lku0, wku0, pku0, tku0; - real llodvth, wlodvth, ku0, lkvth0, wkvth0, pkvth0, kvth0; - real ku0temp, ldrn, inv_saref, inv_sbref, inv_od_ref, rho_ref; - real sa, sb, saref, sbref, sd, lodk2, lodeta0, kvsat; - real inv_sa, inv_sb, inv_odeff, rho, od_offset, stk2; - real dvth0_lod, dk2_lod, steta0, deta0_lod; - real pseff, pdeff, adeff, aseff, dmcg, dmcgt, dmcgeff; - real dmcieff, dmci, dmdg, dmdgt, dmdgeff; - real ps, pd, as, ad, dumps, dumpd, dumas, dumad, imin; - real nrs, nrd, rsh, gsdiff, gddiff, gstot, gdtot, rs, rd; - real agidl, bgidl, cgidl, egidl, igidl, igisl; - real v3, v4, vfbeff, voxacc, voxdepinv, vxnvt, expvxnvt, vaux; - real dlc, dlcig, aechvb, bechvb, aechvbedge, bechvbedge; - real aigc, bigc, cigc, aigsd, bigsd, cigsd, aigbacc, bigbacc; - real cigbacc, nigbacc, aigbinv, bigbinv, cigbinv, nigbinv; - real nigc, pigcd, eigbinv, igc, modif_pigcd, igcs, igcd; - real igs, igd, igb, igbacc, igbinv; - real llc, lwc, lwlc, pbs, pbsws, pbswgs, pbd, pbswd, pbswgd; - real cgbo, param_cgdo, param_cgso, cgdo, cgso; - real xtis, xtid, jss, jsd, jsws, jswd, jswgs, jswgd; - real jss_temp, jsd_temp, jsws_temp, jswd_temp; - real jsgs_temp, jswgs_temp, jswgd_temp, njs, njd, cgdl, cgsl; - real dwc, tcj, tcjsw, tcjswg, cjs, cjd, cjsws, cjswd; - real cjswgs, cjswgd, cjs_temp, cjd_temp, cjsws_temp, cjswd_temp; - real cjswgs_temp, cjswgd_temp, tpb, tpbsw, tpbswg, phibs, phibd; - real phibsws, phibswd, phibswgs, phibswgd; - real ijthsfwd, ijthsrev, ijthdfwd, ijthdrev, xjbvd, bvd; - real xjbvs, bvs, weffcv, leffcv, cf, acde; - real gbmin, rbdb, grbdb, rbpb, grbpb, rbsb, grbsb, rbpd, grbpd; - real rbps, grbps, nvtms, nvtmd, isbs, isbd, xexpbvs, xexpbvd; - real vjsmfwd, vjdmfwd, ivjsmfwd, ivjdmfwd, sslpfwd, dslpfwd; - real vjsmrev, vjdmrev, ivjsmrev, ivjdmrev, sslprev, dslprev; - real cbs, cbd, evbs, evbd, vbs_jct, vbd_jct; - real csub, clc, cle, abulkcvfactor, xpart, vfbcv; - real coxwl, arg1, arg2, qdrn, qbulk, qgate, qsrc, ccn; - real abulkcv, alphaz, vdsatcv, two_third_coxwl; - real vbseffcv, noff, voffcv, vgstnvt, qac0, qsub0; - real vdseffcv, cox, tox, ccen, link, coxwlcen, moin, deltaphi; - real arg, czbd, czbs, czbdsw, czbssw, czbdswg, czbsswg, sarg; - real mjs, mjd, mjsws, mjswd, mjswgs, mjswgd; - real ckappas, ckappad, qgso, qgdo, dt0_dvg, sxpart, dxpart; - real qgmb, qgmid, qgb, qbd, qbs, qb, qd, qs; - - real fourkt, leffx2, Temp; - - - - - //****** Function to calculate geometrical parameters ******// - //****** and intermediaries for rd an rs calculation ******// - analog function real get_nuintd; - input nf, minsd; - real nf, minsd; - - begin - if ((nf%2) != 0) - get_nuintd = 2.0 * max((nf - 1.0) / 2.0, 0.0); - else - begin - if (minsd == 1) /* minimize # of source */ - get_nuintd = 2.0 * max((nf / 2.0 - 1.0), 0.0); - else - get_nuintd = nf; - end - end - endfunction - - analog function real get_nuendd; - input nf, minsd; - real nf, minsd; - - begin - if ((nf%2) != 0) - get_nuendd = 1.0; - else - begin - if (minsd == 1) /* minimize # of source */ - get_nuendd = 2.0; - else - get_nuendd = 0.0; - end - end - endfunction - - analog function real get_nuints; - input nf, minsd; - real nf, minsd; - - begin - if ((nf%2) != 0) - get_nuints= 2.0 * max((nf - 1.0) / 2.0, 0.0); - else - begin - if (minsd == 1) /* minimize # of source */ - get_nuints = nf; - else - get_nuints = 2.0 * max((nf / 2.0 - 1.0), 0.0); - end - end - endfunction - - analog function real get_nuends; - input nf, minsd; - real nf, minsd; - - begin - if ((nf%2) != 0) - get_nuends = 1.0; - else - begin - if (minsd == 1) /* minimize # of source */ - get_nuends = 0.0; - else - get_nuends = 2.0; - end - end - endfunction - - analog function real get_ps; - input nf, geo, minsd, weffcj, dmcg, dmci, dmdg; - real nf, geo, minsd, weffcj, dmcg, dmci, dmdg; - real psiso, pssha, psmer; - real t0, t1, t2; - real nuints, nuends; - - - begin - - nuints = 0.0; - nuends = 0.0; - - if (geo < 9) - begin - nuints = get_nuints(nf, minsd); - nuends = get_nuends(nf, minsd); - end - - t0 = dmcg + dmci; - t1 = dmcg + dmcg; - t2 = dmdg + dmdg; - - psiso = t0 + t0 + weffcj; - pssha = t1; - psmer = t2; - - case(geo) - 0: get_ps = nuends * psiso + nuints * pssha; - 1: get_ps = nuends * psiso + nuints * pssha; - 2: get_ps = (nuends + nuints) * pssha; - 3: get_ps = (nuends + nuints) * pssha; - 4: get_ps = nuends * psiso + nuints * pssha; - 5: get_ps = (nuends + nuints) * pssha; - 6: get_ps = nuends * psmer + nuints * pssha; - 7: get_ps = nuends * psmer + nuints * pssha; - 8: get_ps = nuends * psmer + nuints * pssha; - 9: get_ps = psiso + (nf - 1.0) * pssha; - 10: get_ps = nf * pssha; - default: $strobe ("Warning: Specified GEO = %e not matched", geo); - endcase - end - endfunction - - analog function real get_pd; - input nf, geo, minsd, weffcj, dmcg, dmci, dmdg; - real nf, geo, minsd, weffcj, dmcg, dmci, dmdg; - real pdiso, pdsha, pdmer; - real t0, t1, t2; - real nuintd, nuendd; - - begin - - nuintd = 0.0; - nuendd = 0.0; - - if (geo < 9) - begin - nuintd = get_nuintd(nf, minsd); - nuendd = get_nuendd(nf, minsd); - end - - t0 = dmcg + dmci; - t1 = dmcg + dmcg; - t2 = dmdg + dmdg; - - pdiso = t0 + t0 + weffcj; - pdsha = t1; - pdmer = t2; - - case(geo) - 0: get_pd = nuendd * pdiso + nuintd * pdsha; - 1: get_pd = (nuendd + nuintd) * pdsha; - 2: get_pd = nuendd * pdiso + nuintd * pdsha; - 3: get_pd = (nuendd + nuintd) * pdsha; - 4: get_pd = nuendd * pdmer + nuintd * pdsha; - 5: get_pd = nuendd * pdmer + nuintd * pdsha; - 6: get_pd = nuendd * pdiso + nuintd * pdsha; - 7: get_pd = (nuendd + nuintd) * pdsha; - 8: get_pd = nuendd * pdmer + nuintd * pdsha; - 9: get_pd = nf * pdsha; - 10: get_pd = pdiso + (nf - 1.0) * pdsha; - default: $strobe("Warning: Specified GEO = %d not matched", geo); - endcase - end - endfunction - - analog function real get_as; - input nf, geo, minsd, weffcj, dmcg, dmci, dmdg; - real nf, geo, minsd, weffcj, dmcg, dmci, dmdg; - real asiso, assha, asmer; - real t0; - real nuints, nuends; - - begin - - nuints = 0.0; - nuends = 0.0; - - if (geo < 9) - begin - nuints = get_nuints(nf, minsd); - nuends = get_nuends(nf, minsd); - end - - t0 = dmcg + dmci; - - asiso = t0 * weffcj; - assha = dmcg * weffcj; - asmer = dmdg * weffcj; - - case(geo) - 0: get_as = nuends * asiso + nuints * assha; - 1: get_as = nuends * asiso + nuints * assha; - 2: get_as = (nuends + nuints) * assha; - 3: get_as = (nuends + nuints) * assha; - 4: get_as = nuends * asiso + nuints * assha; - 5: get_as = (nuends + nuints) * assha; - 6: get_as = nuends * asmer + nuints * assha; - 7: get_as = nuends * asmer + nuints * assha; - 8: get_as = nuends * asmer + nuints * assha; - 9: get_as = asiso + (nf - 1.0) * assha; - 10: get_as = nf * assha; - default: $strobe("Warning: Specified GEO = %d not matched", geo); - endcase - end - endfunction - - analog function real get_ad; - input nf, geo, minsd, weffcj, dmcg, dmci, dmdg; - real nf, geo, minsd, weffcj, dmcg, dmci, dmdg; - real adiso, adsha, admer; - real t0; - real nuintd, nuendd; - - - begin - - nuintd = 0.0; - nuendd = 0.0; - - if (geo < 9) - begin - nuintd = get_nuintd(nf, minsd); - nuendd = get_nuendd(nf, minsd); - end - - t0 = dmcg + dmci; - - adiso = t0 * weffcj; - adsha = dmcg * weffcj; - admer = dmdg * weffcj; - - case(geo) - 0: get_ad = nuendd * adiso + nuintd * adsha; - 1: get_ad = (nuendd + nuintd) * adsha; - 2: get_ad = nuendd * adiso + nuintd * adsha; - 3: get_ad = (nuendd + nuintd) * adsha; - 4: get_ad = nuendd * admer + nuintd * adsha; - 5: get_ad = nuendd * admer + nuintd * adsha; - 6: get_ad = nuendd * adiso + nuintd * adsha; - 7: get_ad = (nuendd + nuintd) * adsha; - 8: get_ad = nuendd * admer + nuintd * adsha; - 9: get_ad = nf * adsha; - 10: get_ad = adiso + (nf - 1.0) * adsha; - default: $strobe("Warning: Specified GEO = %d not matched", geo); - endcase - end - endfunction - - analog function real get_rendi; - input weffcj, rsh, dmcg, dmci, dmdg, nuend, rgeo, type; - real weffcj, rsh, dmcg, dmci, dmdg, nuend, rgeo, type; - - - begin - if (type == 1) - begin - case(rgeo) - 1, 2, 5: - begin - if (nuend == 0.0) - get_rendi = 0.0; - else - get_rendi = rsh * dmcg / (weffcj * nuend); - end - 3, 4, 6: - begin - if ((dmcg + dmci) == 0.0) - $strobe("(dmcg + dmci) can not be equal to zero"); - if (nuend == 0.0) - get_rendi = 0.0; - else - get_rendi = rsh * weffcj / (3.0 * nuend * (dmcg + dmci)); - end - default: - $strobe("warning: specified rgeo = %d not matched", rgeo); - endcase - end - else - begin - case(rgeo) - 1, 3, 7: - begin - if (nuend == 0.0) - get_rendi = 0.0; - else - get_rendi = rsh * dmcg / (weffcj * nuend); - end - 2, 4, 8: - begin - if ((dmcg + dmci) == 0.0) - $strobe("(dmcg + dmci) can not be equal to zero"); - if (nuend == 0.0) - get_rendi = 0.0; - else - get_rendi = rsh * weffcj / (3.0 * nuend * (dmcg + dmci)); - end - default: - $strobe("warning: specified rgeo = %d not matched", rgeo); - endcase - end - end - endfunction - - analog function real get_renda; - input weffcj, rsh, dmcg, dmci, dmdg, nuend, rgeo, type; - real weffcj, rsh, dmcg, dmci, dmdg, nuend, rgeo, type; - - - begin - if (type == 1) - begin - case(rgeo) - 1, 2, 5: - begin - if (nuend == 0.0) - get_renda = 0.0; - else - get_renda = rsh * dmcg / (weffcj * nuend); - end - 3, 4, 6: - begin - if (dmcg == 0.0) - $strobe("dmcg can not be equal to zero"); - if (nuend == 0.0) - get_renda = 0.0; - else - get_renda = rsh * weffcj / (6.0 * nuend * dmcg); - end - default: - $strobe("warning: specified rgeo = %d not matched", rgeo); - endcase - end - else - begin - case(rgeo) - 1, 3, 7: - begin - if (nuend == 0.0) - get_renda = 0.0; - else - get_renda = rsh * dmcg / (weffcj * nuend); - end - 2, 4, 8: - begin - if (dmcg == 0.0) - $strobe("dmcg can not be equal to zero"); - if (nuend == 0.0) - get_renda = 0.0; - else - get_renda = rsh * weffcj / (6.0 * nuend * dmcg); - end - default: - $strobe("warning: specified rgeo = %d not matched", rgeo); - endcase - end - end - endfunction - - analog function real get_rtot; - input nf, geo, rgeo, minsd, weffcj, rsh, dmcg, dmci, dmdg, type; - real nf, geo, rgeo, minsd, weffcj, rsh, dmcg, dmci, dmdg, type; - real rint, rend; - real nuintd, nuendd, nuints, nuends; - real DUMMY; - real rtot; - - begin - - rend = 0.0; - nuintd = 0.0; - nuendd = 0.0; - nuints = 0.0; - nuends = 0.0; - - if (geo < 9) /* since geo = 9 and 10 only happen when nf = even */ - begin - nuintd = get_nuintd(nf, minsd); - nuints = get_nuints(nf, minsd); - nuendd = get_nuendd(nf, minsd); - nuends = get_nuends(nf, minsd); - - /* internal s/d resistance -- assume shared s or d and all wide contacts */ - if (type == 1) - begin - if (nuints == 0.0) - rint = 0.0; - else - rint = rsh * dmcg / ( weffcj * nuints); - end - else - begin - if (nuintd == 0.0) - rint = 0.0; - else - rint = rsh * dmcg / ( weffcj * nuintd); - end - end - - /* end s/d resistance -- geo dependent */ - case(geo) - 0: - begin - if (type == 1) - rend = get_rendi(weffcj, rsh, dmcg, dmci, dmdg, nuends, rgeo, 1); - else - rend = get_rendi(weffcj, rsh, dmcg, dmci, dmdg, nuendd, rgeo, 0); - end - 1: - begin - if (type == 1) - rend = get_rendi(weffcj, rsh, dmcg, dmci, dmdg, nuends, rgeo, 1); - else - rend = get_renda(weffcj, rsh, dmcg, dmci, dmdg, nuendd, rgeo, 0); - end - 2: - begin - if (type == 1) - rend = get_renda(weffcj, rsh, dmcg, dmci, dmdg, nuends, rgeo, 1); - else - rend = get_rendi(weffcj, rsh, dmcg, dmci, dmdg, nuendd, rgeo, 0); - end - 3: - begin - if (type == 1) - rend = get_renda(weffcj, rsh, dmcg, dmci, dmdg, nuends, rgeo, 1); - else - rend = get_renda(weffcj, rsh, dmcg, dmci, dmdg, nuendd, rgeo, 0); - end - 4: - begin - if (type == 1) - rend = get_rendi(weffcj, rsh, dmcg, dmci, dmdg, nuends, rgeo, 1); - else - rend = rsh * dmdg / weffcj; - end - 5: - begin - if (type == 1) - rend = get_renda(weffcj, rsh, dmcg, dmci, dmdg, nuends, rgeo, 1); - else - rend = rsh * dmdg / (weffcj * nuendd); - end - 6: - begin - if (type == 1) - rend = rsh * dmdg / weffcj; - else - rend = get_rendi(weffcj, rsh, dmcg, dmci, dmdg, nuendd, rgeo, 0); - end - 7: - begin - if (type == 1) - rend = rsh * dmdg / (weffcj * nuends); - else - rend = get_renda(weffcj, rsh, dmcg, dmci, dmdg, nuendd, rgeo, 0); - end - 8: - begin - rend = rsh * dmdg / weffcj; - end - 9: /* all wide contacts assumed for geo = 9 and 10 */ - begin - if (type == 1) - begin - rend = 0.5 * rsh * dmcg / weffcj; - if (nf == 2.0) - rint = 0.0; - else - rint = rsh * dmcg / (weffcj * (nf - 2.0)); - end - else - begin - rend = 0.0; - rint = rsh * dmcg / (weffcj * nf); - end - end - 10: - begin - if (type == 1) - begin - rend = 0.0; - rint = rsh * dmcg / (weffcj * nf); - end - else - begin - rend = 0.5 * rsh * dmcg / weffcj;; - if (nf == 2.0) - rint = 0.0; - else - rint = rsh * dmcg / (weffcj * (nf - 2.0)); - end - end - default: - $strobe("Warning: specified geo = %d not matched", geo); - endcase - - if (rint <= 0.0) - get_rtot = rend; - else if (rend <= 0.0) - get_rtot = rint; - else - get_rtot = rint * rend / (rint + rend); - if(get_rtot==0.0) - $strobe("Warning: zero resistance returned from get_rtot"); - end - endfunction - - analog function real get_vjm; - input nvtm, ijth, isb, xexpbv; - real nvtm, ijth, isb, xexpbv; - real tb, tc, evjmovnv; - - begin - tc = xexpbv; - tb = 1.0 + ijth / isb - tc; - evjmovnv = 0.5 * (tb + sqrt(tb * tb + 4.0 * tc)); - get_vjm = nvtm * ln(evjmovnv); - end - endfunction - - - analog - begin - - @(initial_model) // Changed MEB - begin - - a0 = A0; - a1 = A1; - a2 = A2; - acde = ACDE; - ad = AD; - agidl = AGIDL; - ags = AGS; - aigbacc = AIGBACC; - aigbinv = AIGBINV; - aigc = AIGC; - aigsd = AIGSD; - alpha0 = ALPHA0; - alpha1 = ALPHA1; - as = AS; - at = AT; - b0 = B0; - b1 = B1; - beta0 = BETA0; - bgidl = BGIDL; - bigbacc = BIGBACC; - bigbinv = BIGBINV; - bigc = BIGC; - bigsd = BIGSD; - bvd = BVD; - bvs = BVS; - capmod = CAPMOD; - cdsc = CDSC; - cdscb = CDSCB; - cdscd = CDSCD; - cf = CF; - cgbo = CGBO; - cgdl = CGDL; - cgidl = CGIDL; - cgsl = CGSL; - cigbacc = CIGBACC; - cigbinv = CIGBINV; - cigc = CIGC; - cigsd = CIGSD; - cit = CIT; - cjd = CJD; - cjs = CJS; - cjswd = CJSWD; - cjswgd = CJSWGD; - cjswgs = CJSWGS; - cjsws = CJSWS; - ckappad = CKAPPAD; - ckappas = CKAPPAS; - clc = CLC; - cle = CLE; - delta = DELTA; - diomod = DIOMOD; - dlc = DLC; - dlcig = DLCIG; - dmcg = DMCG; - dmcgt = DMCGT; - dmci = DMCI; - dmdg = DMDG; - drout = DROUT; - dsub = DSUB; - dvt0 = DVT0; - dvt0w = DVT0W; - dvt1 = DVT1; - dvt1w = DVT1W; - dvt2 = DVT2; - dvt2w = DVT2W; - dvtp0 = DVTP0; - dvtp1 = DVTP1; - dwb = DWB; - dwc = DWC; - dwg = DWG; - dwj = DWJ; - egidl = EGIDL; - eigbinv = EIGBINV; - epsrox = EPSROX; - eta0 = ETA0; - etab = ETAB; - eu = EU; - fprout = FPROUT; - gamma1 = GAMMA1; - gamma2 = GAMMA2; - gbmin = GBMIN; - geomod = GEOMOD; - gmin = GMIN; - igbmod = IGBMOD; - igcmod = IGCMOD; - ijthdfwd = IJTHDFWD; - ijthdrev = IJTHDREV; - ijthsfwd = IJTHSFWD; - ijthsrev = IJTHSREV; - imin = MIN; - jsd = JSD; - jss = JSS; - jswd = JSWD; - jswgd = JSWGD; - jswgs = JSWGS; - jsws = JSWS; - k1 = K1; - k2 = K2; - k3 = K3; - k3b = K3B; - keta = KETA; - kt1 = KT1; - kt1l = KT1L; - kt2 = KT2; - ku0 = KU0; - kvsat = KVSAT; - kvth0 = KVTH0; - l = L; - lambda = LAMBDA; - lc = LC; - lint = LINT; - lku0 = LKU0; - lkvth0 = LKVTH0; - ll = LL; - lln = LLN; - llodku0 = LLODKU0; - llodvth = LLODVTH; - lodeta0 = LODETA0; - lodk2 = LODK2; - lpe0 = LPE0; - lpeb = LPEB; - lw = LW; - lwl = LWL; - lwn = LWN; - minv = MINV; - mjd = MJD; - mjs = MJS; - mjswd = MJSWD; - mjswgd = MJSWGD; - mjswgs = MJSWGS; - mjsws = MJSWS; - mobmod = MOBMOD; - moin = MOIN; - ndep = NDEP; - nf = NF; - nfactor = NFACTOR; - ngate = NGATE; - ngcon = NGCON; - nigbacc = NIGBACC; - nigbinv = NIGBINV; - nigc = NIGC; - njd = NJD; - njs = NJS; - noff = NOFF; - nrd = NRD; - nrs = NRS; - nsd = NSD; - nsub = NSUB; - ntox = NTOX; - param_cgdo = CGDO; - param_cgso = CGSO; - pbd = PBD; - pbs = PBS; - pbswd = PBSWD; - pbswgd = PBSWGD; - pbswgs = PBSWGS; - pbsws = PBSWS; - pclm = PCLM; - pd = PD; - pdibl1 = PDIBL1; - pdibl2 = PDIBL2; - pdiblb = PDIBLB; - pdits = PDITS; - pditsd = PDITSD; - pditsl = PDITSL; - permod = PERMOD; - phin = PHIN; - pigcd = PIGCD; - pku0 = PKU0; - pkvth0 = PKVTH0; - poxedge = POXEDGE; - prt = PRT; - prwb = PRWB; - prwg = PRWG; - ps = PS; - pscbe1 = PSCBE1; - pscbe2 = PSCBE2; - pvag = PVAG; - rbdb = RBDB; - rbodymod = RBODYMOD; - rbpb = RBPB; - rbpd = RBPD; - rbps = RBPS; - rbsb = RBSB; - rdsmod = RDSMOD; - rdsw = RDSW; - rdswmin = RDSWMIN; - rdw = RDW; - rdwmin = RDWMIN; - rgatemod = RGATEMOD; - rgeomod = RGEOMOD; - rsh = RSH; - rshg = RSHG; - rsw = RSW; - rswmin = RSWMIN; - sa = SA; - saref = SAREF; - sb = SB; - sbref = SBREF; - sd = SD; - steta0 = STETA0; - stk2 = STK2; - tcj = TCJ; - tcjsw = TCJSW; - tcjswg = TCJSWG; - tempmod = TEMPMOD; - tku0 = TKU0; - toxe = TOXE; - toxm = TOXM; - toxp = TOXP; - toxref = TOXREF; - tpb = TPB; - tpbsw = TPBSW; - tpbswg = TPBSWG; - type = 1.0; - u0 = U0; - ua = UA; - ua1 = UA1; - ub = UB; - ub1 = UB1; - uc = UC; - uc1 = UC1; - ute = UTE; - vbm = VBM; - vbx = VBX; - vfb = VFB; - vfbcv = VFBCV; - voff = VOFF; - voffcv = VOFFCV; - voffl = VOFFL; - vsat = VSAT; - vth0 = VTH0; - vtl = VTL; - w = W; - w0 = W0; - wint = WINT; - wku0 = WKU0; - wkvth0 = WKVTH0; - wl = WL; - wlc = WLC; - wln = WLN; - wlod = WLOD; - wlodku0 = WLODKU0; - wlodvth = WLODVTH; - wr = WR; - ww = WW; - wwc = WWC; - wwl = WWL; - wwlc = WWLC; - wwn = WWN; - xgl = XGL; - xgw = XGW; - xj = XJ; - xjbvd = XJBVD; - xjbvs = XJBVS; - xl = XL; - xn = XN; - xrcrg1 = XRCRG1; - xrcrg2 = XRCRG2; - xt = XT; - xtid = XTID; - xtis = XTIS; - xw = XW; -/////////////////////////////////////////////////////////////////// - xpart = XPART; // Added by MEB - llc = LLC; - lwc = LWC; - lwlc = LWLC; - Temp = (TEMP+273.15); -////////////////////////////////////////////////////////////////// - - if (mobmod == -99.0) - mobmod = 0; - else if ((mobmod != 0) && (mobmod != 1) && (mobmod != 2)) - begin - mobmod = 0; - $strobe("Warning: MOBMOD has been set to its default value: 0."); - end - - if (rdsmod == -99.0) - rdsmod = 0; - else if ((rdsmod != 0) && (rdsmod != 1)) - begin - rdsmod = 0; - $strobe("Warning: RDSMOD has been set to its default value: 0."); - end - - if (tempmod == -99.0) - tempmod = 0; - else if ((tempmod != 0) && (tempmod != 1)) - begin - tempmod = 0; - $strobe("Warning: TEMPMOD has been set to its default value: 0."); - end - - if ((diomod != 0) && (diomod != 1) && (diomod != 2)) - begin - diomod = 1; - $strobe("Warning: DIOMOD has been set to its default value: 1."); - end - - if ((capmod != 0) && (capmod != 1) && (capmod != 2)) - begin - capmod = 2; - $strobe("Warning: CAPMOD has been set to its default value: 2."); - end - - if ((permod != 0) && (permod != 1)) - begin - permod = 1; - $strobe("Warning: PERMOD has been set to its default value: 1."); - end - - if ((igcmod != 0) && (igcmod != 1)) - begin - igcmod = 0; - $strobe("Warning: IGCMOD has been set to its default value: 0."); - end - - if ((igbmod != 0) && (igbmod != 1)) - begin - igbmod = 0; - $strobe("Warning: IGBMOD has been set to its default value: 0."); - end - - if ((rbodymod != 0) && (rbodymod != 1)) - begin - rbodymod = 0; - $strobe("Warning: RBODYMOD has been set to its default value: 0."); - end - - if (toxref <= 0.0) - begin - $strobe("Fatal: TOXREF = %e is not positive.", TOXREF); - $finish(1); - end - - if (toxe != -99.0 && toxp != -99.0 && DTOX != 0.0 && (toxe != (toxp + DTOX))) - $strobe("Warning: TOXE, TOXP and DTOX all given and TOXE != TOXP + DTOX. DTOX ignored."); - else if (toxe != -99.0 && toxp == -99.0) - toxp = toxe - DTOX; - else if (toxe == -99.0 && toxp != -99.0) - toxe = toxp + DTOX; - else if (toxp == -99.0 && toxe == -99.0) - begin - toxe = 3.0e-9; - toxp = toxe; - end -///// cox added MEB - cox = (3.45311e-11/toxe); - if (toxe < 1.0e-10) - $strobe("Warning: TOXE = %e is less than 1A. Recommended TOXE >= 5A", toxe); - if (toxp < 1.0e-10) - $strobe("Warning: TOXP = %e is less than 1A. Recommended TOXP >= 5A", toxp); - - if (toxm == -99.0) - toxm = toxe; - if (toxm <= 0.0) - begin - $strobe("Fatal: TOXM = %e is not positive.", toxm); - $finish(1); - end - - if (toxm < 1.0e-10) - $strobe("Warning: TOXM = %e is less than 1A. Recommended TOXM >= 5A", toxm); - - if (epsrox <= 0.0) - begin - $strobe("Warning: EPSROX is not positive. Default value taken."); - epsrox = 3.9; - end - - if (TNOM < -273.15) - begin - $strobe("Warning: TNOM is not physically possible. Default value taken."); - tnom = 300.15; - end - else - tnom = TNOM + 273.15; - - if (l <= 0.0 ) - begin - $strobe("FATAL : L is not positive."); - $finish(1); - end - - if (w <= 0.0 ) - begin - $strobe("FATAL : W is not positive."); - $finish(1); - end - - if (nf < 1.0) - begin - $strobe("Warning : NF must be at least equal to 1.Default value taken"); - nf = 1.0; - end - - if (phin < -0.4) - begin - $strobe("Fatal: phin = %e is less than -0.4.", PHIN); - $finish(1); - end - else - - if (nsub <= 0.0) - begin - $strobe("Fatal: NSUB = %e is not positive.", NSUB); - $finish(1); - end - else if (NSUB <= 1.0e14) - $strobe("Warning: NSUB = %e may be too small.", NSUB); - else if (NSUB >= 1.0e21) - $strobe("Warning: NSUB = %e may be too large.", NSUB); - - if (xj <= 0.0) - $strobe("Fatal: XJ = %e is not positive.", XJ); - - if (ngate < 0.0) - begin - $strobe("Fatal: NGATE = %e is not positive.", NGATE); - $finish(1); - end - if (ngate > 1.0e25) - begin - $strobe("Fatal: NGATE = %e is too high.", NGATE); - $finish(1); - end - if ((ngate > 0.0) && (ngate <= 1.0e18)) - $strobe("Warning: NGATE = %e is less than 1.E18cm^-3.", NGATE); - - if (poxedge <= 0.0) - begin - $strobe("Fatal: POXEDGE = %e is non-positive.", POXEDGE); - $finish(1); - end - - if (dsub < 0.0) - begin - $strobe("Fatal: DSUB = %e is negative.", DSUB); - $finish(1); - end - - if (drout < 0.0) - begin - $strobe("Fatal: DROUT = %e is negative.", DROUT); - $finish(1); - end - - if (pdibl1 < 0.0) - $strobe("Warning: PDIBL1 = %e is negative.", PDIBL1); - - if (pdibl2 < 0.0) - $strobe("Warning: PDIBL2 = %e is negative.", PDIBL2); - - if (dvt1w < 0.0) - begin - $strobe("Fatal: DVT1W = %e is negative.", DVT1W); - $finish(1); - end - - if (dvt1 < 0.0) - begin - $strobe("Fatal: DVT1 = %e is negative.", DVT1); - $finish(1); - end - - if (dvt0 < 0.0) - $strobe("Warning: DVT0 = %e is negative.", DVT0); - - if (lpe0 < -leff) - begin - $strobe("Fatal: LPE0 = %e is less than -leff.", LPE0); - $finish(1); - end - - if (w0 == -weff) - begin - $strobe("Fatal: (W0 + Weff) = 0 causing divided-by-zero."); - $finish(1); - end - if (abs(1.0e-6 / (w0 + weff)) > 10.0) - $strobe("Warning: (W0 + Weff) may be too small."); - - if (eta0 < 0.0) - $strobe("Warning: ETA0 = %e is negative.", ETA0); - - if (lpeb < -leff) - begin - $strobe("Fatal: LPEB = %e is less than -leff.", LPEB); - $finish(1); - end - - if (nfactor < 0.0) - $strobe("Warning: NFACTOR = %e is negative.", NFACTOR); - - if (cdsc < 0.0) - $strobe("Warning: CDSC = %e is negative.", CDSC); - - if (cdscd < 0.0) - $strobe("Warning: CDSCD = %e is negative.", CDSCD); - - if (u0 == -99.0) - u0 = (type == 1) ? 0.067 : 0.025; - - if (ua == -99.0) - ua = (mobmod == 2) ? 1.0e-15 : 1.0e-9; - - if (uc == -99.0) - uc = (mobmod == 1) ? -0.0465 : -0.0465e-9; - - if (uc1 == -99.0) - uc1 = (mobmod == 1) ? -0.056 : -0.056e-9; - - if (eu == -99.0) - eu = (type == 1) ? 1.67 : 1.0;; - - if (prwg < 0.0) - begin - $strobe("Warning: PRWG = %e is negative. Set to zero.", PRWG); - prwg = 0.0; - end - - if (a2 < 0.01) - begin - $strobe("Warning: A2 = %e is too small. Set to 0.01.", a2); - a2 = 0.01; - end - else if (a2 > 1.0) - begin - $strobe("Warning: A2 = %e is larger than 1. A2 is set to 1 and A1 is set to 0.", a2); - a2 = 1.0; - a1 = 0.0; - end - - if (delta < 0.0) - begin - $strobe("Fatal: DELTA = %e is less than zero.", delta); - $finish(1); - end - - if ((lambda != -99.0) && (lambda > 0.0)) - begin - if (lambda > 1.0e-9) - $strobe("Warning: LAMBDA = %e may be too large.", LAMBDA); - end - - if (fprout < 0.0) - begin - $strobe("Fatal: FPROUT = %e is negative.", FPROUT); - $finish(1); - end - - if (pclm <= 0.0) - begin - $strobe("Fatal: PCLM = %e is not positive.", PCLM); - $finish(1); - end - - if (pdits < 0.0) - begin - $strobe("Fatal: PDITS = %e is negative.", pdits); - $finish(1); - end - - if (pditsl < 0.0) - begin - $strobe("Fatal: PDITSL = %e is negative.", pditsl); - $finish(1); - end - - if (pscbe2 <= 0.0) - $strobe("Warning: PSCBE2 = %e is not positive.", PSCBE2); - - if ((vtl != -99.0) && (vtl > 0.0)) - begin - if (vtl < 6.0e4) - $strobe("Warning: Thermal velocity VTL = %e may be too small.", vtl); - end - - if (xn < 3.0) - begin - $strobe("Warning: back scattering coeff XN = %e is too small. Reset to 3.0", xn); - xn = 3.0; - end - - if (rgatemod == 1) - begin - if (rshg <= 0.0) - $strobe("Warning: RSHG should be positive for RGATEMOD = 1."); - end - else if (rgatemod == 2) - begin - if (rshg <= 0.0) - $strobe("Warning: RSHG <= 0.0 for rgateMod = 2."); - else if (xrcrg1 <= 0.0) - $strobe("Warning: XRCRG1 <= 0.0 for rgateMod = 2."); - end - if (rgatemod == 3) - begin - if (rshg <= 0.0) - $strobe("Warning: RSHG should be positive for RGATEMOD = 3."); - else if (xrcrg1 <= 0.0) - $strobe("Warning: XRCRG1 should be positive for RGATEMOD = 3."); - end - - if (ngcon < 1.0) - begin - $strobe("Fatal: The parameter NGCON cannot be smaller than one."); - $finish(1); - end - - if ((l + xl) <= xgl) - begin - $strobe("Fatal: The parameter XGL must be smaller than Ldrawn+XL."); - $finish(1); - end - - if((sa > 0.0) && (sb > 0.0) && ((nf == 1.0) || ((nf > 1.0) && (sd > 0.0))) ) - begin - if (saref <= 0.0) - begin - $strobe("Fatal: SAREF = %e is not positive.",saref); - $finish(1); - end - if (sbref <= 0.0) - begin - $strobe("Fatal: SBREF = %e is not positive.",sbref); - $finish(1); - end - if (wlod < 0.0) - begin - $strobe("Warning: WLOD = %e is less than 0.",wlod); - wlod = 0.0; - end - if (kvsat < -1.0 ) - begin - $strobe("Warning: KVSAT = %e is is too small; Reset to -1.0.",kvsat); - kvsat = -1.0; - end - if (kvsat > 1.0) - begin - $strobe("Warning: KVSAT = %e is too big; Reset to 1.0.",kvsat); - kvsat = 1.0; - end - if (lodk2 <= 0.0) - $strobe("Warning: LODK2 = %e is not positive.",lodk2); - if (lodeta0 <= 0.0) - $strobe("Warning: LODETA0 = %e ih not positive.",lodeta0); - end - - if (aigc == -99.0) - aigc = (type == 1) ? 0.43 : 0.31; - if (bigc == -99.0) - bigc = (type == 1) ? 0.054 : 0.024; - if (cigc == -99.0) - cigc = (type == 1) ? 0.075 : 0.03; - if (aigsd == -99.0) - aigsd = (type == 1) ? 0.43 : 0.31; - if (bigsd == -99.0) - bigsd = (type == 1) ? 0.054 : 0.024; - if (cigsd == -99.0) - cigsd = (type == 1) ? 0.075 : 0.03; - - if (nigbinv <= 0.0) - begin - $strobe("Fatal: NIGBINV = %e is non-positive.", nigbinv); - $finish(1); - end - - if (nigbacc <= 0.0) - begin - $strobe("Fatal: NIGBACC = %e is non-positive.", nigbacc); - $finish(1); - end - - if (nigc <= 0.0) - begin - $strobe("Fatal: NIGC = %e is non-positive.", nigc); - $finish(1); - end - - if (pigcd <= 0.0) - begin - $strobe("Fatal: PIGCD = %e is non-positive.", pigcd); - $finish(1); - end - - if (pbs < 0.1) - begin - pbs = 0.1; - $strobe("Given PBS is less than 0.1. PBS is set to 0.1."); - end - - if (pbsws < 0.1) - begin - pbsws = 0.1; - $strobe("Given PBSWS is less than 0.1. PBSWS is set to 0.1."); - end - - if (pbswgs < 0.1) - begin - pbswgs = 0.1; - $strobe("Given PBSWGS is less than 0.1. PBSWGS is set to 0.1."); - end - - if (pbd < 0.1) - begin - pbd = 0.1; - $strobe("Given PBD is less than 0.1. PBD is set to 0.1."); - end - - if (pbswd < 0.1) - begin - pbswd = 0.1; - $strobe("Given PBSWD is less than 0.1. PBSWD is set to 0.1."); - end - - if (pbswgd < 0.1) - begin - pbswgd = 0.1; - $strobe("Given PBSWGD is less than 0.1. PBSWGD is set to 0.1."); - end - - if (ijthdfwd <= 0.0) - begin - ijthdfwd = 0.1; - //$strobe("IJTHDFWD reset to %e.", ijthdfwd); - end - - if (ijthsfwd <= 0.0) - begin - ijthsfwd = 0.1; - // $strobe("IJTHSFWD reset to %e.", ijthsfwd); - end - - if (ijthdrev <= 0.0) - begin - ijthdrev = 0.1; - $strobe("IJTHDREV reset to %e.", ijthdrev); - end - - if (ijthsrev <= 0.0) - begin - ijthsrev = 0.1; - $strobe("IJTHSREV reset to %e.", ijthsrev); - end - - if ((xjbvd <= 0.0) && (diomod == 2)) - begin - xjbvd = 1.0; - $strobe("XJBVD reset to %e.", xjbvd); - end - else if ((xjbvd < 0.0) && (diomod == 0)) - begin - xjbvd = 1.0; - $strobe("XJBVD reset to %e.", xjbvd); - end - - if (bvd <= 0.0) - begin - bvd = 10.0; - $strobe("BVD reset to %e.\n", bvd); - end - - if ((xjbvs <= 0.0) && (diomod == 2)) - begin - xjbvs = 1.0; - $strobe("XJBVS reset to %e.\n", xjbvs); - end - else if ((xjbvs < 0.0) && (diomod == 0)) - begin - xjbvs = 1.0; - $strobe("XJBVS reset to %e.\n", xjbvs); - end - - if (bvs <= 0.0) - begin - bvs = 10.0; - $strobe("BVS reset to %g.\n", bvs); - end - - if (gbmin < 1.0e-20) - $strobe("Warning: GBMIN = %e is too small.", gbmin); - - if (clc < 0.0) - begin - $strobe("Fatal: CLC = %e is negative.", CLC); - $finish(1); - end - - if (noff < 0.1) - $strobe("Warning: NOFF = %e is too small.", noff); - - if (voffcv < -0.5) - $strobe("Warning: VOFFCV = %e is too small.", voffcv); - - if (moin < 5.0) - $strobe("Warning: MOIN = %e is too small.", moin); - if (moin > 25.0) - $strobe("Warning: MOIN = %e is too large.", moin); - - if (ckappas < 0.02) - begin - $strobe("Warning: CKAPPAS = %e is too small.", ckappas); - ckappas = 0.02; - end - - if (ckappad < 0.02) - begin - $strobe("Warning: CKAPPAD = %e is too small.", ckappad); - ckappad = 0.02; - end - - //***** Oxide capacitances (line 110-111, file b4temp.c) *****// - coxe = epsrox * `EPS0 / toxe; - coxp = epsrox * `EPS0 / toxp; - - //***** Overlap capacitances (line 113-129, file b4temp.c) *****// - if (param_cgdo == -99.0) - begin - if (dlc > 0.0) - param_cgdo = dlc * coxe - cgdl ; - else - param_cgdo = 0.6 * xj * coxe; - end - - if (param_cgso == -99.0) - begin - if (dlc > 0.0) - param_cgso = dlc * coxe - cgsl ; - else - param_cgso = 0.6 * xj * coxe; - end - - if (cgbo == -99.0) - cgbo = 2.0 * dwc * coxe; - - tratio = Temp / tnom; // changed MEB - factor1 = sqrt(`EPSSI / (epsrox * `EPS0) * toxe); - - //***** Intrinsic carrier concentration (line 139-141, file b4temp.c) *****// - vtm0 = `KboQ * tnom; - eg0 = 1.16 - 7.02e-4 * tnom * tnom / (tnom + 1108.0); - ni = 1.45e10 * (tnom / 300.15) * sqrt(tnom / 300.15) * exp(21.5565981 - eg0 / (2.0 * vtm0)); - vtm = `KboQ * $temperature; - - //***** Energy gap (line 145, file b4temp.c) *****// - eg = 1.16 - 7.02e-4 * $temperature * $temperature / ($temperature + 1108.0); - - //***** Temperture dependance of Junction diode IV (line 149-191, file b4temp.c) *****// - if ($temperature != tnom) - begin - t0 = eg0 / vtm0 - eg / vtm; - t1 = ln($temperature / tnom); - t2 = t0 + xtis * t1; - t3 = exp(t2 / njs); - jss_temp = jss * t3; - jsws_temp = jsws * t3; - jswgs_temp = jswgs * t3; - t2 = t0 + xtid * t1; - t3 = exp(t2 / njd); - jsd_temp = jsd * t3; - jswd_temp = jswd * t3; - jswgd_temp = jswgd * t3; - end - else - begin - jss_temp = jss; - jsws_temp = jsws; - jswgs_temp = jswgs; - jsd_temp = jsd; - jswd_temp = jswd; - jswgd_temp = jswgd; - end - - if (jss_temp < 0.0) - jss_temp = 0.0; - if (jsws_temp < 0.0) - jsws_temp = 0.0; - if (jswgs_temp < 0.0) - jswgs_temp = 0.0; - if (jsd_temp < 0.0) - jsd_temp = 0.0; - if (jswd_temp < 0.0) - jswd_temp = 0.0; - if (jswgd_temp < 0.0) - jswgd_temp = 0.0; - - //***** Temperature dependence of D/B and S/B diode capacitance (line 193-278, file b4temp.c) *****// - deltemp = $temperature - tnom; - t0 = tcj * deltemp; - - if (t0 >= -1.0) - begin - cjs_temp = cjs *(1.0 + t0); - cjd_temp = cjd *(1.0 + t0); - end - else - begin - if (cjs > 0.0) - begin - cjs_temp = 0.0; - $strobe("Temperature effect has caused CJS to be negative. CJS is clamped to zero."); - end - if (cjd > 0.0) - begin - cjd_temp = 0.0; - $strobe("Temperature effect has caused CJD to be negative. CJD is clamped to zero.\n"); - end - end - - t0 = tcjsw * deltemp; - - if (t0 >= -1.0) - begin - cjsws_temp = cjsws *(1.0 + t0); - cjswd_temp = cjswd *(1.0 + t0); - end - else - begin - if (cjsws > 0.0) - begin - cjsws_temp = 0.0; - $strobe("Temperature effect has caused CJSWS to be negative. CJSWS is clamped to zero."); - end - if (cjswd > 0.0) - begin - cjswd_temp = 0.0; - $strobe("Temperature effect has caused CJSWD to be negative. CJSWD is clamped to zero."); - end - end - - t0 = tcjswg * deltemp; - - if (t0 >= -1.0) - begin - cjswgs_temp = cjswgs *(1.0 + t0); - cjswgd_temp = cjswgd *(1.0 + t0); - end - else - begin - if (cjswgs > 0.0) - begin - cjswgs_temp = 0.0; - $strobe("Temperature effect has caused CJSWGS to be negative. CJSWGS is clamped to zero."); - end - if (cjswgd > 0.0) - begin - cjswgd_temp = 0.0; - $strobe("Temperature effect has caused CJSWGD to be negative. CJSWGD is clamped to zero."); - end - end - - phibs = pbs - tpb * deltemp; - - if (phibs < 0.01) - begin - phibs = 0.01; - $strobe("Temperature effect has caused PBS to be less than 0.01. PBS is clamped to 0.01."); - end - - phibd = pbd - tpb * deltemp; - - if (phibd < 0.01) - begin - phibd = 0.01; - $strobe("Temperature effect has caused PBD to be less than 0.01. PBD is clamped to 0.01."); - end - - phibsws = pbsws - tpbsw * deltemp; - - if (phibsws <= 0.01) - begin - phibsws = 0.01; - $strobe("Temperature effect has caused PBSWS to be less than 0.01. PBSWS is clamped to 0.01."); - end - - phibswd = pbswd - tpbsw * deltemp; - - if (phibswd <= 0.01) - begin - phibswd = 0.01; - $strobe("Temperature effect has caused PBSWD to be less than 0.01. PBSWD is clamped to 0.01."); - end - - phibswgs = pbswgs - tpbswg * deltemp; - - if (phibswgs <= 0.01) - begin - phibswgs = 0.01; - $strobe("Temperature effect has caused PBSWGS to be less than 0.01. PBSWGS is clamped to 0.01."); - end - - phibswgd = pbswgd - tpbswg * deltemp; - - if (phibswgd <= 0.01) - begin - phibswgd = 0.01; - $strobe("Temperature effect has caused PBSWGD to be less than 0.01. PBSWGD is clamped to 0.01."); - end - - //***** Effective length and width (line 362-396, file b4temp.c) *****// - lnew = l + xl ; - wnew = w / nf + xw; - t0 = pow(lnew, lln); - t1 = pow(wnew, lwn); - tmp1 = ll / t0 + lw / t1 + lwl / (t0 * t1); - dl = lint + tmp1; - tmp2 = llc / t0 + lwc / t1 + lwlc / (t0 * t1); - dlc = dlc + tmp2; - dlcig = dlcig + tmp2; - t2 = pow(lnew, wln); - t3 = pow(wnew, wwn); - tmp1 = wl / t2 + ww / t3 + wwl / (t2 * t3); - dw = wint + tmp1; - tmp2 = wlc / t2 + wwc / t3 + wwlc / (t2 * t3); - dwj = dwj + tmp2; - leff = lnew - 2.0 * dl; - weff = wnew - 2.0 * dw; - leffcv = lnew - 2.0 * dlc; - - if (leffcv <= 0.0) - begin - $strobe("Fatal: Effective channel length for C-V <= 0"); - $finish(1); - end - - weffcv = wnew - 2.0 * dwc; - - if (weffcv <= 0.0) - begin - $strobe("Fatal: Effective channel width for C-V <= 0"); - $finish(1); - end - - if (leff <= 1.0e-9) - $strobe("Warning: leff = %e <= 1.0e-9. Recommended leff >= 1e-8.", leff); - - if (weff <= 1.0e-9) - $strobe("Warning: weff = %e <= 1.0e-9. Recommended weff >= 1e-7.", weff); - - if (leffcv <= 1.0e-9) - $strobe("warning: leff for CV = %e <= 1.0e-9. recommended leffcv >=1e-8 ", leffcv); - - if (weffcv <= 1.0e-9) - $strobe("warning: weff for CV = %e <= 1.0e-9. recommended weffcv >= 1e-7 ", weffcv); - - //***** weffcj (line 429-437, file b4temp.c) *****// - weffcj = wnew - 2.0 * dwj; - - if (weffcj <= 0.0) - begin - $strobe("Fatal: Effective channel width for S/D junctions <= 0."); - $finish(1); - end - - //***** Temperature model (line 955-1026, file b4temp.c) *****// - - abulkcvfactor = 1.0 + pow((clc / leffcv), cle); - t0 = (tratio - 1.0); - powweffwr = pow(weffcj * 1.0e6, wr) * nf; - t1 = 0.0; - t2 = 0.0; - t3 = 0.0; - t4 = 0.0; - - if (tempmod == 0) - begin - ua = ua + ua1 * t0; - ub = ub + ub1 * t0; - uc = uc + uc1 * t0; - vsattemp = vsat - at * t0; - t10 = prt * t0; - - if(rdsmod == 1) - begin - /* External Rd(V) */ - t1 = rdw + t10; - t2 = rdwmin + t10; - - /* External Rs(V) */ - t3 = rsw + t10; - t4 = rswmin + t10; - end - - /* Internal Rds(V) in IV */ - rds0 = (rdsw + t10) * nf / powweffwr; - rdswmin = (rdswmin + t10) * nf / powweffwr; - end - else /* TEMPMOD = 1 */ - begin - ua = ua * (1.0 + ua1 * deltemp); - ub = ub * (1.0 + ub1 * deltemp); - uc = uc * (1.0 + uc1 * deltemp); - vsattemp = vsat * (1.0 - at * deltemp); - t10 = 1.0 + prt * deltemp; - - if(rdsmod == 1) - begin - /* External Rd(V) */ - t1 = rdw * t10; - t2 = rdwmin * t10; - - /* External Rs(V) */ - t3 = rsw * t10; - t4 = rswmin * t10; - end - - /* Internal Rds(V) in IV */ - rds0 = rdsw * t10 * nf / powweffwr; - rdswmin = rdswmin * t10 * nf / powweffwr; - end - - if (t1 < 0.0) - begin - t1 = 0.0; - $strobe("Warning: rdw at current temperature is negative; set to 0."); - end - - if (t2 < 0.0) - begin - t2 = 0.0; - $strobe("Warning: rdwmin at current temperature is negative; set to 0."); - end - - rd0 = t1 / powweffwr; - rdwmin = t2 / powweffwr; - - if (t3 < 0.0) - begin - t3 = 0.0; - $strobe("Warning: rsw at current temperature is negative; set to 0."); - end - - if (t4 < 0.0) - begin - t4 = 0.0; - $strobe("Warning: rswmin at current temperature is negative; set to 0."); - end - - rs0 = t3 / powweffwr; - rswmin = t4 / powweffwr; - - if (u0 > 1.0) - u0 = u0 / 1.0e4; - - u0temp = u0 * pow(tratio, ute); - - if (u0temp <= 0.0) - begin - $strobe("Fatal: U0 at current temperature = %e is not positive.", u0temp); - $finish(1); - end - - if (eu < 0.0) - begin - eu = 0.0; - $strobe("Warning: EU has been negative; reset to 0.0."); - end - - if (vsattemp <= 0.0) - begin - $strobe("Fatal: VSAT at current temperature = %e is not positive.", vsattemp); - $finish(1); - end - - if (vsattemp < 1.0e3) - $strobe("Warning: VSAT at current temperature = %e may be too small.", vsattemp); - - if (rds0 < 0.0) - begin - $strobe("Warning: Rds at current temperature = %e is negative. Set to zero.", rds0); - rds0 = 0.0; - end - - if (rdsw < 0.0) - begin - $strobe("Warning: rdsw = %e is negative. Set to zero.", rdsw); - rdsw = 0.0; - rds0 = 0.0; - end - - if (rdswmin < 0.0) - begin - $strobe("Warning: rdswmin at current temperature = %e is negative. Set to zero.", rdswmin); - rdswmin = 0.0; - end - - if (b1 == -weff) - begin - $strobe("Fatal: (B1 + weff) = 0 causing divided-by-zero."); - $finish(1); - end - - if (abs(1.0e-6 / (b1 + weff)) > 10.0) - $strobe("Warning: (B1 + weff) may be too small."); - - //***** Source End Velocity Limit (line 1024-1034, file b4temp.c) *****// - if ((vtl != -99.0) && (vtl > 0.0)) - begin - if (lc < 0.0) - lc = 0.0; - - t0 = leff / (xn * leff + lc); - tfactor = (1.0 - t0) / (1.0 + t0 ); - end - - //***** Overlap capacitances (line 1034-1040, file b4temp.c) *****// - if (cf == -99.0) - cf = 2.0 * epsrox * `EPS0 / `PI * ln(1.0 + 0.4e-6 / toxe); - - param_cgdo = (param_cgdo + cf) * weffcv; - param_cgso = (param_cgso + cf) * weffcv; - cgbo = cgbo * leffcv * nf; - - //***** Test on ndep and gamma1 (line 1043-1045, file b4temp.c) *****// - if (ndep == -99.0 && gamma1 != -99.0) - begin - t0 = gamma1 * coxe; - ndep = 3.01248e22 * t0 * t0; - end - else if (ndep != -99.0 && gamma1 == -99.0) - gamma1 = 5.753e-12 * sqrt(ndep) / coxe; - else if (ndep == -99.0 && gamma1 == -99.0) - begin - ndep = 1.0e17; - gamma1 = 5.753e-12 * sqrt(ndep) / coxe; - end - - if (ndep <= 0.0) - begin - $strobe("Fatal: NDEP = %e is not positive.", ndep); - $finish(1); - end - - if (ndep <= 1.0e12) - $strobe("Warning: NDEP = %e may be too small.", ndep); - else if (ndep >= 1.0e21) - $strobe("Warning: NDEP = %e may be too large.", ndep); - - if (gamma2 == -99.0) - gamma2 = 5.753e-12 * sqrt(nsub) / coxe; - - //***** Potential surface (line 1048-1049, file b4temp.c) *****// - phi = vtm0 * ln(ndep / ni) + phin + 0.4; - sqrtphi = sqrt(phi); - - //***** Calculation of some intermediaries (line 1054-1091, file b4temp.c) *****// - xdep0 = sqrt(2.0 * `EPSSI / (`Charge_q * ndep * 1.0e6)) * sqrtphi; - litl = sqrt(3.0 * xj * toxe); - vbi = vtm0 * ln(nsd * ndep / (ni * ni)); - - if (ngate > 0.0) - vfbsd = vtm0 * ln(ngate / nsd); - else - vfbsd = 0.0; - - cdep0 = sqrt(`Charge_q * `EPSSI * ndep * 1.0e6 / 2.0 / phi); - toxratio = exp(ntox * ln(toxref / toxe)) / toxe / toxe; - toxratioedge = exp(ntox * ln(toxref / (toxe * poxedge))) / toxe / toxe / poxedge / poxedge; - mstar = 0.5 + atan(minv) / `PI; - voffcbn = voff + voffl / leff; - ldeb = sqrt(`EPSSI * vtm0 / (`Charge_q * ndep * 1.0e6)) / 3.0; - acde = acde * pow((ndep / 2.0e16), -0.25); - - if (capmod ==2) - begin - if (acde < 0.1) - $strobe("Warning: ACDE = %e is too small.", acde); - if (acde > 1.6) - $strobe("Warning: ACDE = %e is too large.", acde); - end - - //***** Calculation of K1 and K2 (line 1101-1149, file b4temp.c) *****// - if (k1 != -99.0 || k2 != -99.0) - begin - if (k1 == -99.0) - begin - $strobe("Warning: K1 should be specified with K2."); - k1 = 0.53; - end - if (k2 == -99.0) - begin - $strobe("Warning: K2 should be specified with K1."); - k2 = -0.0186; - end - end - else - begin - if (vbx == -99.0) - vbx = phi - 7.7348e-4 * ndep * xt * xt; - if (vbx > 0.0) - vbx = -vbx; - if (vbm > 0.0) - vbm = -vbm; - - t0 = gamma1 - gamma2; - t1 = sqrt(phi - vbx) - sqrtphi; - t2 = sqrt(phi * (phi - vbm)) - phi; - k2 = t0 * t1 / (2.0 * t2 + vbm); - k1 = gamma2 - 2.0 * k2 * sqrt(phi - vbm); - end - - //***** Calculation of vbsc (line 1151-1161, file b4temp.c) *****// - if (k2 < 0.0) - begin - t0 = 0.5 * k1 / k2; - vbsc = 0.9 * (phi - t0 * t0); - - if (vbsc > -3.0) - vbsc = -3.0; - else if (vbsc < -30.0) - vbsc = -30.0; - end - else - vbsc = -30.0; - - if (vbsc > vbm) - vbsc = vbm; - - //***** Flat-band voltage (line 1165-1179, file b4temp.c) *****// - if (vfb == -99.0) - begin - if (vth0 != -99.0) - vfb = type * vth0 - phi - k1 * sqrtphi; - else - vfb = -1.0; - end - - //***** Flat-band voltage (line 1165-1179, file b4temp.c) *****// - if (vth0 == -99.0) - vth0 = type * (vfb + phi + k1 * sqrtphi); - - //***** Calculation of intermediaries (line 1181-1185, file b4temp.c) *****// - k1ox = k1 * toxe / toxm; - k2ox = k2 * toxe / toxm; - - //***** Calculation of vfbzb (line 1186-1265, file b4temp.c) *****// - t3 = type * vth0 - vfb - phi; - t4 = t3 + t3; - t5 = 2.5 * t3; - vtfbphi1 = (type == 1) ? t4 : t5; - - if (vtfbphi1 < 0.0) - vtfbphi1 = 0.0; - - vtfbphi2 = 4.0 * t3; - - if (vtfbphi2 < 0.0) - vtfbphi2 = 0.0; - - tmp = sqrt(`EPSSI / (epsrox * `EPS0) * toxe * xdep0); - t0 = dsub * leff / tmp; - - if (t0 < `EXP_THRESHOLD) - begin - t1 = exp(t0); - t2 = t1 - 1.0; - t3 = t2 * t2; - t4 = t3 + 2.0 * t1 * `MIN_EXP; - theta0vb0 = t1 / t4; - end - else - theta0vb0 = 1.0 / (`MAX_EXP - 2.0); - - t0 = drout * leff / tmp; - - if (t0 < `EXP_THRESHOLD) - begin - t1 = exp(t0); - t2 = t1 - 1.0; - t3 = t2 * t2; - t4 = t3 + 2.0 * t1 * `MIN_EXP; - t5 = t1 / t4; - end - else - t5 = 1.0 / (`MAX_EXP - 2.0); /* 3.0 * `MIN_EXP omitted */ - - thetarout = pdibl1 * t5 + pdibl2; - tmp = sqrt(xdep0); - tmp1 = vbi - phi; - tmp2 = factor1 * tmp; - t0 = dvt1w * weff * leff / tmp2; - - if (t0 < `EXP_THRESHOLD) - begin - t1 = exp(t0); - t2 = t1 - 1.0; - t3 = t2 * t2; - t4 = t3 + 2.0 * t1 * `MIN_EXP; - t8 = t1 / t4; - end - else - t8 = 1.0 / (`MAX_EXP - 2.0); - - t0 = dvt0w * t8; - t8 = t0 * tmp1; - t0 = dvt1 * leff / tmp2; - - if (t0 < `EXP_THRESHOLD) - begin - t1 = exp(t0); - t2 = t1 - 1.0; - t3 = t2 * t2; - t4 = t3 + 2.0 * t1 * `MIN_EXP; - t9 = t1 / t4; - end - else - t9 = 1.0 / (`MAX_EXP - 2.0); - - t9 = dvt0 * t9 * tmp1; - t4 = toxe * phi / (weff + w0); - t0 = sqrt(1.0 + lpe0 / leff); - t5 = k1ox * (t0 - 1.0) * sqrtphi + (kt1 + kt1l / leff) * (tratio - 1.0); - tmp3 = type * vth0 - t8 - t9 + k3 * t4 + t5; - vfbzb = tmp3 - phi - k1 * sqrtphi; - - //***** Stress Effect (line 1267-1366, file b4temp.c) *****// - ldrn = l; - t0 = pow(lnew, llodku0); - w_tmp = wnew + wlod; - t1 = pow(w_tmp, wlodku0); - tmp1 = lku0 / t0 + wku0 / t1 + pku0 / (t0 * t1); - ku0 = 1.0 + tmp1; - t0 = pow(lnew, llodvth); - t1 = pow(w_tmp, wlodvth); - tmp1 = lkvth0 / t0 + wkvth0 / t1 + pkvth0 / (t0 * t1); - kvth0 = 1.0 + tmp1; - kvth0 = sqrt(kvth0*kvth0 + `DELTA); - t0 = (tratio - 1.0); - ku0temp = ku0 * (1.0 + tku0 *t0) + `DELTA; - inv_saref = 1.0/(saref + 0.5 * ldrn); - inv_sbref = 1.0/(sbref + 0.5 * ldrn); - inv_od_ref = inv_saref + inv_sbref; - rho_ref = KU0 / ku0temp * inv_od_ref; - - if ((sa > 0.0) && (sb > 0.0) && ((nf == 1.0) || ((nf > 1.0) && (sd > 0.0)))) - begin - inv_sa = 0; - inv_sb = 0; - /////// for loop changed to while loop MEB - // - i=0; - while (i < nf) - // for(i = 0; i < nf; i = i+1) - begin - t0 = 1.0 / nf / (sa + 0.5*ldrn + i * (sd +ldrn)); - t1 = 1.0 / nf / (sb + 0.5*ldrn + i * (sd +ldrn)); - inv_sa = inv_sa + t0; - inv_sb = inv_sb + t1; - i = i +1; - end - - inv_odeff = inv_sa + inv_sb; - rho = KU0 / ku0temp * inv_odeff; - t0 = (1.0 + rho)/(1.0 + rho_ref); - u0temp = u0temp * t0; - t1 = (1.0 + kvsat * rho)/(1.0 + kvsat * rho_ref); - vsattemp = vsattemp * t1; - od_offset = inv_odeff - inv_od_ref; - dvth0_lod = KVTH0 / kvth0 * od_offset; - dk2_lod = stk2 / pow(kvth0, lodk2) * od_offset; - deta0_lod = steta0 / pow(kvth0, lodeta0) * od_offset; - vth0 = vth0 + dvth0_lod; - - if (VFB == -99.0 && VTH0 == -99.0) - vfb = -1.0; - else - vfb = vfb + type * dvth0_lod; - - vfbzb = vfbzb + type * dvth0_lod; - t3 = type * vth0 - vfb - phi; - t4 = t3 + t3; - t5 = 2.5 * t3; - vtfbphi1 = (type == 1) ? t4 : t5; - - if (vtfbphi1 < 0.0) - vtfbphi1 = 0.0; - - vtfbphi2 = 4.0 * t3; - - if (vtfbphi2 < 0.0) - vtfbphi2 = 0.0; - - k2 = k2 + dk2_lod; - - if (k2 < 0.0) - begin - t0 = 0.5 * k1 / k2; - vbsc = 0.9 * (phi - t0 * t0); - - if (vbsc > -3.0) - vbsc = -3.0; - else if (vbsc < -30.0) - vbsc = -30.0; - end - else - vbsc = -30.0; - - if (vbsc > vbm) - vbsc = vbm; - - k2ox = k2 * toxe / toxm; - eta0 = eta0 + deta0_lod; - end - - //*********** HF model parameters (line 1371-1392, file b4temp.c) *****************// - if (rbodymod == 1.0) - begin - if (rbdb < 1.0e-3) - grbdb = 1.0e3; - else - grbdb = gbmin + 1.0 / rbdb; - - if (rbpb < 1.0e-3) - grbpb = 1.0e3; - else - grbpb = gbmin + 1.0 / rbpb; - - if (rbps < 1.0e-3) - grbps = 1.0e3; - else - grbps = gbmin + 1.0 / rbps; - - if (rbsb < 1.0e-3) - grbsb = 1.0e3; - else - grbsb = gbmin + 1.0 / rbsb; - - if (rbpd < 1.0e-3) - grbpd = 1.0e3; - else - grbpd = gbmin + 1.0 / rbpd; - end - - - //*********** Process geomertry dependent parasitics (line 1396-1452, file b4temp.c) *****************// - grgeltd = rshg * (xgw + weffcj / 3.0 / ngcon) / (ngcon * nf * (lnew - xgl)); - - if (grgeltd > 0.0) - grgeltd = 1.0 / grgeltd; - else - begin - grgeltd = 1.0e3; - - if (rgatemod != 0) - $strobe("Warning: The gate conductance reset to 1.0e3 ohms."); - end - - dmcgeff = dmcg - dmcgt; - dmcieff = dmci; - dmdgeff = dmdg - dmcgt; - - if (ps > 0.0) - begin - if (permod == 0) - pseff = ps; - else - pseff = ps - weffcj * nf; - end - else - pseff = get_ps(nf, geomod, imin, weffcj, dmcgeff, dmcieff, dmdgeff); - - if (pd > 0.0) - begin - if (permod == 0) - pdeff = pd; - else - pdeff = pd - weffcj * nf; - end - else - pdeff = get_pd(nf, geomod, imin, weffcj, dmcgeff, dmcieff, dmdgeff); - - if (as > 0.0) - aseff = as; - else - aseff = get_as(nf, geomod, imin, weffcj, dmcgeff, dmcieff, dmdgeff); - - if (ad > 0.0) - adeff = ad; - else - adeff = get_ad(nf, geomod, imin, weffcj, dmcgeff, dmcieff, dmdgeff); - - //*********** Processing S/D resistance and conductance below (line 1453-1516, file b4temp.c) *****************// - if (nrs != -99.0) - gsdiff = rsh * nrs; - else if (rgeomod > 0) - gsdiff = get_rtot(nf, geomod, rgeomod, imin, weffcj, rsh, dmcgeff, dmcieff, dmdgeff, 1); - else - gsdiff = 0.0; - - if (gsdiff > 0.0) - gsdiff = 1.0 / gsdiff; - else - begin - gsdiff = 1.0e3; /* mho */ - $strobe ("Warning: source conductance reset to 1.0e3 mho."); - end - - if (nrd != -99.0) - gddiff = rsh * nrd; - else if (rgeomod > 0) - gddiff = get_rtot(nf, geomod, rgeomod, imin, weffcj, rsh, dmcgeff, dmcieff, dmdgeff, 0); - else - gddiff = 0.0; - - if (gddiff > 0.0) - gddiff = 1.0 / gddiff; - else - begin - gddiff = 1.0e3; /* mho */ - $strobe ("Warning: drain conductance reset to 1.0e3 mho."); - end - - aechvb = (type == 1) ? 4.97232e-7 : 3.42537e-7; - bechvb = (type == 1) ? 7.45669e11 : 1.16645e12; - aechvbedge = aechvb * weff * dlcig * toxratioedge; - bechvbedge = -bechvb * toxe * poxedge; - aechvb = aechvb * weff * leff * toxratio; - bechvb = bechvb * -toxe; - - //*********** Diode model intermediaries calculation (line 1519-1635, file b4temp.c) *****************// - nvtms = vtm * njs; - - if ((aseff <= 0.0) && (pseff <= 0.0)) - isbs = 1.0e-14; - else - isbs = aseff * jss_temp + pseff * jsws_temp + weffcj * nf * jswgs_temp; - - if (isbs > 0.0) - begin - case(diomod) - 0: - begin - if ((bvs / nvtms) > `EXP_THRESHOLD) - xexpbvs = xjbvs * `MIN_EXP; - else - xexpbvs = xjbvs * exp(-bvs / nvtms); - end - 1: - begin - vjsmfwd = get_vjm(nvtms, ijthsfwd, isbs, 0.0); - ivjsmfwd = isbs * exp(vjsmfwd / nvtms); - end - 2: - begin - if ((bvs / nvtms) > `EXP_THRESHOLD) - begin - xexpbvs = xjbvs * `MIN_EXP; - tmp = `MIN_EXP; - end - else - begin - xexpbvs = exp(-bvs / nvtms); - tmp = xexpbvs; - xexpbvs = xexpbvs * xjbvs; - end - - vjsmfwd = get_vjm(nvtms, ijthsfwd, isbs, xexpbvs); - t0 = exp(vjsmfwd / nvtms); - ivjsmfwd = isbs * (t0 - xexpbvs / t0 + xexpbvs - 1.0); - sslpfwd = isbs * (t0 + xexpbvs / t0) / nvtms; - - t2 = ijthsrev / isbs; - - if (t2 < 1.0) - begin - t2 = 10.0; - $strobe("Warning: ijthsrev too small and set to 10 times isbsat.\n"); - end - - vjsmrev = -bvs - nvtms * ln((t2 - 1.0) / xjbvs); - t1 = xjbvs * exp(-(bvs + vjsmrev) / nvtms); - ivjsmrev = isbs * (1.0 + t1); - sslprev = -isbs * t1 / nvtms; - end - default: $strobe("Specified diomod = %d not matched", diomod); - endcase - end - - nvtmd = vtm * njd; - - if ((adeff <= 0.0) && (pdeff <= 0.0)) - isbd = 1.0e-14; - else - isbd = adeff * jsd_temp + pdeff * jswd_temp + weffcj * nf * jswgd_temp; - - if (isbd > 0.0) - begin - case(diomod) - 0: - begin - if ((bvd / nvtmd) > `EXP_THRESHOLD) - xexpbvd = xjbvd * `MIN_EXP; - else - xexpbvd = xjbvd * exp(-bvd / nvtmd); - end - 1: - begin - vjdmfwd = get_vjm(nvtmd, ijthdfwd, isbd, 0.0); - ivjdmfwd = isbd * exp(vjdmfwd / nvtmd); - end - 2: - begin - if ((bvd / nvtmd) > `EXP_THRESHOLD) - begin - xexpbvd = xjbvd * `MIN_EXP; - tmp = `MIN_EXP; - end - else - begin - xexpbvd = exp(-bvd / nvtmd); - tmp = xexpbvd; - xexpbvd = xexpbvd * xjbvd; - end - - vjsmfwd = get_vjm(nvtmd, ijthdfwd, isbd, xexpbvd); - t0 = exp(vjdmfwd / nvtmd); - ivjdmfwd = isbd * (t0 - xexpbvd / t0 + xexpbvd - 1.0); - dslpfwd = isbd * (t0 + xexpbvd / t0) / nvtmd; - - t2 = ijthdrev / isbd; - - if (t2 < 1.0) - begin - t2 = 10.0; - $strobe("Warning: ijthdrev too small and set to 10 times idbsat.\n"); - end - - vjdmrev = -bvd - nvtmd * ln((t2 - 1.0) / xjbvd); - t1 = xjbvd * exp(-(bvd + vjdmrev) / nvtmd); - ivjdmrev = isbd * (1.0 + t1); - dslprev = -isbd * t1 / nvtmd; - end - default: $strobe("Specified diomod = %d not matched", diomod); - endcase - end - end - //*********************************// - //****** End of initial_model ******// - //*********************************// - - //****** Calculation of all equations to define all currents ******// - //****** Definition of the tensions ******// - vds = type * V(drainp, sourcep); - vgs = type * V(gatep, sourcep); - vbs = type * V(bulkp, sourcep); - vges = type * V(gate, sourcep); - vgms = type * V(gatem, sourcep); - vsbs = type * V(sourceb, sourcep); - vdbs = type * V(drainb, sourcep); - vses = type * V(source, sourcep); - vdes = type * V(drain, sourcep); - vbes = type * V(bulk, sourcep); - vgd = vgs - vds; - vbd = vbs - vds; - vgb = vgs - vbs; - vded = vdes - vds; - vgeg = vges - vgs; - vgmg = vgms - vgs; - vgmb = vgms - vbs; - vgegm = vgeg - vgmg; - vbeb = vbes - vbs; - vdbd = vdbs - vds; - vbesb = vbes - vsbs; - vbedb = vbes - vdbs; - vbsb = vbs - vsbs; - vbdb = vbs - vdbs; - - //***** Source/drain junction diode DC model (line 634-829, file b4ld.c) *****// - vbs_jct = (rbodymod == 0) ? vbs : vsbs; - vbd_jct = (rbodymod == 0) ? vbd : vdbd; - nvtms = vtm * njs; - - if ((aseff <= 0.0) && (pseff <= 0.0)) - isbs = 1.0e-14; - else - isbs = aseff * jss_temp + pseff * jsws_temp + weffcj * nf * jswgs_temp; - - if (isbs <= 0.0) - cbs = gmin * vbs_jct; - else - begin - case(diomod) - 0: - begin - evbs = exp(vbs_jct / nvtms); - t1 = xjbvs * exp(-(bvs + vbs_jct) / nvtms); - cbs = isbs * (evbs + xexpbvs - t1 - 1.0) + gmin * vbs_jct; - end - 1: - begin - t2 = vbs_jct / nvtms; - - if (t2 < -`EXP_THRESHOLD) - cbs = isbs * (`MIN_EXP - 1.0) + gmin * vbs_jct; - else if (vbs_jct <= vjsmfwd) - begin - evbs = exp(t2); - cbs = isbs * (evbs - 1.0) + gmin * vbs_jct; - end - else - begin - t0 = ivjsmfwd / nvtms; - cbs = ivjsmfwd - isbs + t0 * (vbs_jct - vjsmfwd) + gmin * vbs_jct; - end - end - 2: - begin - if (vbs_jct < vjsmrev) - begin - t0 = vbs_jct / nvtms; - - if (t0 < -`EXP_THRESHOLD) - evbs = `MIN_EXP; - else - evbs = exp(t0); - - t1 = evbs - 1.0; - t2 = ivjsmrev + sslprev * (vbs_jct - vjsmrev); - cbs = t1 * t2 + gmin * vbs_jct; - end - else if (vbs_jct <= vjsmfwd) - begin - t0 = vbs_jct / nvtms; - - if (t0 < -`EXP_THRESHOLD) - evbs = `MIN_EXP; - else - evbs = exp(t0); - - t3 = (bvs + vbs_jct) / nvtms; - - if (t1 > `EXP_THRESHOLD) - t2 = `MIN_EXP; - else - t2 = exp(-t1); - - cbs = isbs * (evbs + xexpbvs - 1.0 - xjbvs * t2) + gmin * vbs_jct; - end - else - cbs = ivjsmfwd + sslpfwd * (vbs_jct - vjsmfwd) + gmin * vbs_jct; - end - endcase - end - - nvtmd = vtm * njd; - - if ((adeff <= 0.0) && (pdeff <= 0.0)) - isbd = 1.0e-14; - else - isbd = adeff * jsd_temp + pdeff * jswd_temp + weffcj * nf * jswgd_temp; - - if (isbd <= 0.0) - cbd = gmin * vbd_jct; - else - begin - case(diomod) - 0: - begin - evbd = exp(vbd_jct / nvtmd); - t1 = xjbvd * exp(-(bvd + vbd_jct) / nvtmd); - cbd = isbd * (evbd + xexpbvd - t1 - 1.0) + gmin * vbd_jct; - end - 1: - begin - t2 = vbd_jct / nvtmd; - - if (t2 < -`EXP_THRESHOLD) - begin - cbd = isbd * (`MIN_EXP - 1.0) + gmin * vbd_jct; - end - else if (vbd_jct <= vjdmfwd) - begin - evbd = exp(t2); - cbd = isbd * (evbd - 1.0) + gmin * vbd_jct; - end - else - begin - t0 = ivjdmfwd / nvtmd; - cbd = ivjdmfwd - isbd + t0 * (vbd_jct - vjdmfwd) + gmin * vbd_jct; - end - end - 2: - begin - if (vbd_jct < vjdmrev) - begin - t0 = vbd_jct / nvtmd; - - if (t0 < -`EXP_THRESHOLD) - evbd = `MIN_EXP; - else - evbd = exp(t0); - - t1 = evbd - 1.0; - t2 = ivjdmrev + dslprev * (vbd_jct - vjdmrev); - cbd = t1 * t2 + gmin * vbd_jct; - end - else if (vbd_jct <= vjdmfwd) - begin - t0 = vbd_jct / nvtmd; - - if (t0 < -`EXP_THRESHOLD) - evbd = `MIN_EXP; - else - evbd = exp(t0); - - t1 = (bvd + vbd_jct) / nvtmd; - - if (t1 > `EXP_THRESHOLD) - t2 = `MIN_EXP; - else - t2 = exp(-t1); - - cbd = isbd * (evbd + xexpbvd - 1.0 - xjbvd * t2) + gmin * vbd_jct; - end - else - cbd = ivjdmfwd + dslpfwd * (vbd_jct - vjdmfwd) + gmin * vbd_jct; - end - endcase - end - - //***** Mode choice (line 831-844, file b4ld.c) *****// - if (vds >= 0.0) - begin - mode = 1; - Vds = vds; - Vbs = vbs; - end - else - begin - mode = -1; - Vds = -vds; - Vbs = vbd; - end - - //***** Effective Vbs (line 846-863, file b4ld.c) *****// - t0 = Vbs - vbsc - 0.001; - t1 = sqrt(t0 * t0 - 0.004 * vbsc); - - if (t0 >= 0.0) - vbseff = vbsc + 0.5 * (t0 + t1); - else - begin - t2 = -0.002 / (t1 - t0); - vbseff = vbsc * (1.0 + t2); - end - - // Correction to forward body bias - t9 = 0.95 * phi; - t0 = t9 - vbseff - 0.001; - t1 = sqrt(t0 * t0 + 0.004 * t9); - vbseff = t9 - 0.5 * (t0 + t1); - - //***** Calculation of phis (line 865-867, file b4ld.c) *****// - phis = phi - vbseff; - sqrtphis = sqrt(phis); - - //***** Threshold Voltage (line 878-969, file b4ld.c) *****// - xdep = xdep0 * sqrtphis / sqrt(phi); - t3 = sqrt(xdep); - v0 = vbi - phi; - t0 = dvt2 * vbseff; - - if (t0 >= - 0.5) - begin - t1 = 1.0 + t0; - t2 = dvt2; - end - else - begin - t4 = 1.0 / (3.0 + 8.0 * t0); - t1 = (1.0 + 3.0 * t0) * t4; - t2 = dvt2 * t4 * t4; - end - - lt1 = factor1 * t3 * t1; - t0 = dvt2w * vbseff; - - if (t0 >= - 0.5) - begin - t1 = 1.0 + t0; - t2 = dvt2w; - end - else - begin - t4 = 1.0 / (3.0 + 8.0 * t0); - t1 = (1.0 + 3.0 * t0) * t4; - t2 = dvt2w * t4 * t4; - end - - ltw = factor1 * t3 * t1; - t0 = dvt1 * leff / lt1; - - if (t0 < `EXP_THRESHOLD) - begin - t1 = exp(t0); - t2 = t1 - 1.0; - t3 = t2 * t2; - t4 = t3 + 2.0 * t1 * `MIN_EXP; - theta0 = t1 / t4; - end - else - theta0 = 1.0 / (`MAX_EXP - 2.0); /* 3.0 * `MIN_EXP omitted */ - - thetavth = dvt0 * theta0; - delt_vth = thetavth * v0; - t0 = dvt1w * weff * leff / ltw; - - if (t0 < `EXP_THRESHOLD) - begin - t1 = exp(t0); - t2 = t1 - 1.0; - t3 = t2 * t2; - t4 = t3 + 2.0 * t1 * `MIN_EXP; - t5 = t1 / t4; - end - else - t5 = 1.0 / (`MAX_EXP - 2.0); /* 3.0 * `MIN_EXP omitted */ - - t0 = dvt0w * t5; - t2 = t0 * v0; - tratio = Temp / tnom - 1.0; // changed MEB - t0 = sqrt(1.0 + lpe0 / leff); - t1 = k1ox * (t0 - 1.0) * sqrtphi + (kt1 + kt1l / leff + kt2 * vbseff) * tratio; - vth_narroww = toxe * phi / (weff + w0); - t3 = eta0 + etab * vbseff; - - if (t3 < 1.0e-4) - begin - t9 = 1.0 / (3.0 - 2.0e4 * t3); - t3 = (2.0e-4 - t3) * t9; - t4 = t9 * t9; - end - else - t4 = 1.0; - - ddibl_sft_dvd = t3 * theta0vb0; - dibl_sft = ddibl_sft_dvd * Vds; - lpe_vb = sqrt(1.0 + lpeb / leff); - vth = type * vth0 + (k1ox * sqrtphis - k1 * sqrt(phi)) * lpe_vb - k2ox - * vbseff - delt_vth - t2 + (k3 + k3b * vbseff) * vth_narroww + t1 - dibl_sft; - - //***** Swing factor (line 978-998, file b4ld.c) *****// - tmp1 = `EPSSI / xdep; - tmp2 = nfactor * tmp1; - tmp3 = cdsc + cdscb * vbseff + cdscd * Vds; - tmp4 = (tmp2 + tmp3 * theta0 + cit) / coxe; - - if (tmp4 >= -0.5) - n = 1.0 + tmp4; - else - begin - t0 = 1.0 / (3.0 + 8.0 * tmp4); - n = (1.0 + 3.0 * tmp4) * t0; - end - - //***** Vth correction for Pocket Implant (line 1002-1024, file b4ld.c) *****// - if (dvtp0 > 0.0) - begin - t0 = -dvtp1 * Vds; - - if (t0 < -`EXP_THRESHOLD) - t2 = `MIN_EXP; - else - t2 = exp(t0); - - t3 = leff + dvtp0 * (1.0 + t2); - t4 = vtm * ln(leff / t3); - vth = vth - n * t4; - end - - //***** Poly Gate Si Depletion Effect (line 1028 & 4584-4612, file b4ld.c) *****// - t0 = vfb + phi; - - if ((ngate > 1.0e18) && (ngate < 1.0e25) && (vgs > t0)) - begin - t1 = 1.0e6 * `Charge * `EPSSI * ngate / (coxe * coxe); - t8 = vgs - t0; - t4 = sqrt(1.0 + 2.0 * t8 / t1); - t2 = 2.0 * t8 / (t4 + 1.0); - t3 = 0.5 * t2 * t2 / t1; - t7 = 1.12 - t3 - 0.05; - t6 = sqrt(t7 * t7 + 0.224); - t5 = 1.12 - 0.5 * (t7 + t6); - vgs_eff = vgs - t5; - end - else - vgs_eff = vgs; - - if ((ngate > 1.0e18) && (ngate < 1.0e25) && (vgd > t0)) - begin - t1 = 1.0e6 * `Charge * `EPSSI * ngate / (coxe * coxe); - t8 = vgd - t0; - t4 = sqrt(1.0 + 2.0 * t8 / t1); - t2 = 2.0 * t8 / (t4 + 1.0); - t3 = 0.5 * t2 * t2 / t1; - t7 = 1.12 - t3 - 0.05; - t6 = sqrt(t7 * t7 + 0.224); - t5 = 1.12 - 0.5 * (t7 + t6); - vgd_eff = vgd - t5; - end - else - vgd_eff = vgd; - - if(mode > 0) - Vgs_eff = vgs_eff; - else - Vgs_eff = vgd_eff; - - vgst = Vgs_eff - vth; - - //***** Calculation of vgsteff (line 1051-1109, file b4ld.c) *****// - t0 = n * vtm; - t1 = mstar * vgst; - t2 = t1 / t0; - - if (t2 > `EXP_THRESHOLD) - t10 = t1; - else if (t2 < -`EXP_THRESHOLD) - begin - t10 = vtm * ln(1.0 + `MIN_EXP); - t10 = t10 * n; - end - else - begin - expvgst = exp(t2); - t3 = vtm * ln(1.0 + expvgst); - t10 = n * t3; - end - - t1 = voffcbn - (1.0 - mstar) * vgst; - t2 = t1 / t0; - - if (t2 < -`EXP_THRESHOLD) - begin - t3 = coxe * `MIN_EXP / cdep0; - t9 = mstar + t3 * n; - end - else if (t2 > `EXP_THRESHOLD) - begin - t3 = coxe * `MAX_EXP / cdep0; - t9 = mstar + t3 * n; - end - else - begin - expvgst = exp(t2); - t3 = coxe / cdep0; - t4 = t3 * expvgst; - t5 = t1 * t4 / t0; - t9 = mstar + n * t4; - end - - vgsteff = t10 / t9; - - //***** Effective Channel Geometry (line 1111-1123, file b4ld.c) *****// - t9 = sqrtphis - sqrt(phi); - Weff = weff - 2.0 * (dwg * vgsteff + dwb * t9); - - if (Weff < 2.0e-8) /* to avoid the discontinuity problem due to Weff */ - begin - t0 = 1.0 / (6.0e-8 - 2.0 * Weff); - Weff = 2.0e-8 * (4.0e-8 - Weff) * t0; - end - - //***** Source/Drain Resistance (line 1126-1149, file b4ld.c) *****// - if (rdsmod == 1) - rds = 0.0; - else - begin - t0 = 1.0 + prwg * vgsteff; - t1 = prwb * t9; - t2 = 1.0 / t0 + t1; - t3 = t2 + sqrt(t2 * t2 + 0.01); - t4 = rds0 * 0.5; - rds = rdswmin + t3 * t4; - end - - //***** Bulk Charge Effect (line 1151-1205, file b4ld.c) *****// - t9 = 0.5 * k1ox * lpe_vb / sqrtphis; - t1 = t9 + k2ox - k3b * vth_narroww; - t9 = sqrt(xj * xdep); - tmp1 = leff + 2.0 * t9; - t5 = leff / tmp1; - tmp2 = a0 * t5; - tmp3 = weff + b1; - tmp4 = b0 / tmp3; - t2 = tmp2 + tmp4; - t6 = t5 * t5; - t7 = t5 * t6; - abulk0 = 1.0 + t1 * t2; - t8 = ags * a0 * t7; - dabulk_dvg = -t1 * t8; - abulk = abulk0 + dabulk_dvg * vgsteff; - - if (abulk0 < 0.1) /* added to avoid the problems caused by abulk0 */ - begin - t9 = 1.0 / (3.0 - 20.0 * abulk0); - abulk0 = (0.2 - abulk0) * t9; - end - - if (abulk < 0.1) - begin - t9 = 1.0 / (3.0 - 20.0 * abulk); - abulk = (0.2 - abulk) * t9; - end - - t2 = keta * vbseff; - - if (t2 >= -0.9) - t0 = 1.0 / (1.0 + t2); - else - begin - t1 = 1.0 / (0.8 + t2); - t0 = (17.0 + 20.0 * t2) * t1; - end - - abulk = abulk * t0; - abulk0 = abulk0 * t0; - - //***** Effective Mobility (line 1207-1255, file b4ld.c) *****// - if (mobmod == 0) - begin - t0 = vgsteff + vth + vth; - t2 = ua + uc * vbseff; - t3 = t0 / toxe; - t5 = t3 * (t2 + ub * t3); - end - else if (mobmod == 1) - begin - t0 = vgsteff + vth + vth; - t2 = 1.0 + uc * vbseff; - t3 = t0 / toxe; - t4 = t3 * (ua + ub * t3); - t5 = t4 * t2; - end - else - begin - t0 = (vgsteff + vtfbphi1) / toxe; - t1 = exp(eu * ln(t0)); - t2 = ua + uc * vbseff; - t5 = t1 * t2; - end - - if (t5 >= -0.8) - denomi = 1.0 + t5; - else - begin - t9 = 1.0 / (7.0 + 10.0 * t5); - denomi = (0.6 + t5) * t9; - end - - ueff = u0temp / denomi; - - //***** Saturation Voltage (line 1257-1357, file b4ld.c) *****// - wvcox = Weff * vsattemp * coxe; - wvcoxrds = wvcox * rds; - esat = 2.0 * vsattemp / ueff; - esatl = esat * leff; - t0 = -esatl /ueff; - - if (a1 == 0.0) - Lambda = a2; - else if (a1 > 0.0) - begin - t0 = 1.0 - a2; - t1 = t0 - a1 * vgsteff - 0.0001; - t2 = sqrt(t1 * t1 + 0.0004 * t0); - Lambda = a2 + t0 - 0.5 * (t1 + t2); - end - else - begin - t1 = a2 + a1 * vgsteff - 0.0001; - t2 = sqrt(t1 * t1 + 0.0004 * a2); - Lambda = 0.5 * (t1 + t2); - end - - vgst2vtm = vgsteff + 2.0 * vtm; - - if ((rds == 0.0) && (Lambda == 1.0)) - begin - t0 = 1.0 / (abulk * esatl + vgst2vtm); - t1 = t0 * t0; - t2 = vgst2vtm * t0; - t3 = esatl * vgst2vtm; - vdsat = t3 * t0; - end - else - begin - t9 = abulk * wvcoxrds; - t8 = abulk * t9; - t7 = vgst2vtm * t9; - t6 = vgst2vtm * wvcoxrds; - t0 = 2.0 * abulk * (t9 - 1.0 + 1.0 / Lambda); - t1 = vgst2vtm * (2.0 / Lambda - 1.0) + abulk * esatl + 3.0 * t7; - t2 = vgst2vtm * (esatl + 2.0 * t6); - t3 = sqrt(t1 * t1 - 2.0 * t0 * t2); - vdsat = (t1 - t3) / t0; - end - - //***** Effective Vds (line 1359-1398, file b4ld.c) *****// - t1 = vdsat - Vds - delta; - t2 = sqrt(t1 * t1 + 4.0 * delta * vdsat); - t0 = t1 / t2; - t9 = 2.0 * delta; - - if (t1 >= 0.0) - vdseff = vdsat - 0.5 * (t1 + t2); - else - begin - t4 = t9 / (t2 - t1); - t5 = 1.0 - t4; - vdseff = vdsat * t5; - end - - if (Vds == 0.0) - vdseff = Vds; - - if (vdseff > Vds) - vdseff = Vds; - - diffvds = Vds - vdseff; - - //***** Velocity Overshoot (line 1400-1439, file b4ld.c) *****// - if((lambda != -99.0) && (lambda > 0.0) ) - begin - t1 = leff * ueff; - t2 = lambda / t1; - t5 = 1.0 / (esat * litl); - t6 = 1.0 + diffvds * t5; - t7 = 2.0 / (t6 * t6 + 1.0); - t8 = 1.0 - t7; - t10 = 1.0 + t2 * t8; - esatl = esatl * t10; - end - - //***** Early Voltage at vdsat (line 1441-1464 , file b4ld.c) *****// - tmp4 = 1.0 - 0.5 * abulk * vdsat / vgst2vtm; - t9 = wvcoxrds * vgsteff; - t0 = esatl + vdsat + 2.0 * t9 * tmp4; - t9 = wvcoxrds * abulk; - t1 = 2.0 / Lambda - 1.0 + t9; - vasat = t0 / t1; - - //***** Drain Current for Triode Region (line 1466-1523 , file b4ld.c) *****// - tmp1 = vtfbphi2; - tmp2 = 2.0e8 * toxp; - dt0_dvg = 1.0 / tmp2; - t0 = (vgsteff + tmp1) * dt0_dvg; - tmp3 = exp(0.7 * ln(t0)); - t1 = 1.0 + tmp3; - tcen = 1.9e-9 / t1; - coxeff = `EPSSI * coxp / (`EPSSI + coxp * tcen); - coxeffwovl = coxeff * Weff / leff; - beta = ueff * coxeffwovl; - abovvgst2vtm = abulk / vgst2vtm; - t0 = 1.0 - 0.5 * vdseff * abovvgst2vtm; - fgche1 = vgsteff * t0; - t9 = vdseff / esatl; - fgche2 = 1.0 + t9; - gche = beta * fgche1 / fgche2; - t0 = 1.0 + gche * rds; - idl = gche / t0; - - //***** Degradation Factor due to Pocket Implant (line 1525-1535 , file b4ld.c) *****// - if (fprout <= 0.0) - fp = 1.0; - else - begin - t9 = fprout * sqrt(leff) / vgst2vtm; - fp = 1.0 / (1.0 + t9); - end - - //***** Early Voltage with Channel Length Modulatiom (line 1537-1585, file b4ld.c) *****// - t8 = pvag / esatl; - t9 = t8 * vgsteff; - - if (t9 > -0.9) - pvagterm = 1.0 + t9; - else - begin - t4 = 1.0 / (17.0 + 20.0 * t9); - pvagterm = (0.8 + t9) * t4; - end - - if ((pclm > 0.0) && (diffvds > 1.0e-10)) - begin - t0 = 1.0 + rds * idl; - t2 = vdsat / esat; - t1 = leff + t2; - cclm = fp * pvagterm * t0 * t1 / (pclm * litl); - vaclm = cclm * diffvds; - end - else - begin - vaclm = `MAX_EXP; - cclm = `MAX_EXP; - end - - //***** Early Voltage with Drain-INduced Barrier Lowering (line 1587-1635, file b4ld.c) *****// - if (thetarout > 0.0) - begin - t8 = abulk * vdsat; - t0 = vgst2vtm * t8; - t1 = vgst2vtm + t8; - t2 = thetarout; - vadibl = (vgst2vtm - t0 / t1) / t2; - t7 = pdiblb * vbseff; - - if (t7 >= -0.9) - begin - t3 = 1.0 / (1.0 + t7); - vadibl = vadibl * t3; - end - else - begin - t4 = 1.0 / (0.8 + t7); - t3 = (17.0 + 20.0 * t7) * t4; - vadibl = vadibl * t3; - end - - vadibl = vadibl * pvagterm; - end - else - vadibl = `MAX_EXP; - - //***** Early Voltage with Drain-INduced Threshold Shift (line 1643-1664 , file b4ld.c) *****// - if ((pditsd * Vds) > `EXP_THRESHOLD) - t1 = `MAX_EXP; - else - t1 = exp(pditsd * Vds); - - if (pdits > 0.0) - vadits = (1.0 + (1.0 + pditsl * leff) * t1) / pdits * fp; - else - vadits = `MAX_EXP; - - //***** Early Voltage with Substrate Current Induced Body Effect (line 1666-1685 , file b4.c) *****// - if (pscbe2 > 0.0) - begin - if (diffvds > (pscbe1 * litl / `EXP_THRESHOLD)) - begin - t0 = pscbe1 * litl / diffvds; - vascbe = leff * exp(t0) / pscbe2; - end - else - vascbe = `MAX_EXP * leff/pscbe2; - end - else - vascbe = `MAX_EXP; - - //***** Drain Current (line 1687-1719 , file b4ld.c) *****// - t9 = diffvds / vadibl; - t0 = 1.0 + t9; - idsa = idl * t0; - t9 = diffvds / vadits; - t0 = 1.0 + t9; - idsa = idsa * t0; - t0 = ln((vasat + vaclm) / vasat); - t1 = t0 / cclm; - t9 = 1.0 + t1; - idsa = idsa * t9; - - //***** Substrate current (line 1722-1760, file b4ld.c) *****// - tmp = alpha0 + alpha1 * leff; - - if ((tmp <= 0.0) || (beta0 <= 0.0)) - isub = 0.0; - else - begin - t2 = tmp / leff; - - if (diffvds > beta0 / `EXP_THRESHOLD) - begin - t0 = -beta0 / diffvds; - t1 = t2 * diffvds * exp(t0); - end - else - begin - t3 = t2 * `MIN_EXP; - t1 = t3 * diffvds; - end - - t4 = idsa * vdseff; - isub = t1 * t4; - end - - csub = isub; - - //***** Current Drain (line 1761-1785, file b4ld.c) *****// - t9 = diffvds / vascbe; - t0 = 1.0 + t9; - ids = idsa * t0; - cdrain = ids * vdseff; - - //***** Source End Velocity Limit (line 1787-1817, file b4ld.c) *****// - if ((vtl != -99.0) && (vtl > 0.0)) - begin - t12 = 1.0 / leff / coxeffwovl; - t11 = t12 / vgsteff; - t10 = -t11 / vgsteff; - vs = cdrain * t11; - t0 = 2 * `MM; - t1 = vs / (vtl * tfactor); - - if (t1 <= 0) - t2 = 1.0; - else - t2 = 1.0 + exp(t0 * ln(t1)); - - fsevl = 1.0 / exp(ln(t2)/ t0); - cdrain = cdrain * fsevl; - end - - //***** Rg calculation (line 1824-1858, file b4ld.c) *****// - if (rgatemod > 1) - begin - t9 = xrcrg2 * vtm; - t0 = t9 * beta; - gcrg = xrcrg1 * (t0 + ids); - - if (nf != 1.0) - gcrg = gcrg * nf; - - if (rgatemod == 2) - begin - t10 = grgeltd * grgeltd; - t11 = grgeltd + gcrg; - gcrg = grgeltd * gcrg / t11; - end - end - - //*************** Calculate bias-dependent external S/D resistance (line 1861-1939, file b4ld.c) ****************// - if (rdsmod == 1.0) - begin /* rs(v) */ - t0 = vgs - vfbsd; - t1 = sqrt(t0 * t0 + 1.0e-4); - vgs_eff = 0.5 * (t0 + t1); - t0 = 1.0 + prwg * vgs_eff; - t1 = -prwb * vbs; - t2 = 1.0 / t0 + t1; - t3 = t2 + sqrt(t2 * t2 + 0.01); - t4 = rs0 * 0.5; - rs = rswmin + t3 * t4; - t0 = 1.0 + gsdiff * rs; - gstot = gsdiff / t0; - /* rd(v) */ - t0 = vgd - vfbsd; - t1 = sqrt(t0 * t0 + 1.0e-4); - vgd_eff = 0.5 * (t0 + t1); - t0 = 1.0 + prwg * vgd_eff; - t1 = -prwb * vbd; - t2 = 1.0 / t0 + t1; - t3 = t2 + sqrt(t2 * t2 + 0.01); - t4 = rd0 * 0.5; - rd = rdwmin + t3 * t4; - t0 = 1.0 + gddiff * rd; - gdtot = gddiff / t0; - end - else - begin - gstot = 0.0; - gdtot = 0.0; - end - - //************** Calculate GIDL and GISL current (line 1941-2021, file b4ld.c) *******************// - t0 = 3.0 * toxe; - t1 = (vds - vgs_eff - egidl ) / t0; - - if ((agidl <= 0.0) || (bgidl <= 0.0) || (t1 <= 0.0) || (cgidl <= 0.0) || (vbd > 0.0)) - igidl = 0.0; - else - begin - t2 = bgidl / t1; - - if (t2 < 100.0) - igidl = agidl * weffcj * t1 * exp(-t2); - else - begin - igidl = agidl * weffcj * 3.720075976e-44; - igidl = igidl * t1; - end - - t4 = vbd * vbd; - t5 = -vbd * t4; - t6 = cgidl + t5; - t7 = t5 / t6; - t8 = 3.0 * cgidl * t4 / t6 / t6; - igidl = igidl * t7; - end - - t1 = (-vds - vgd_eff - egidl ) / t0; - - if ((agidl <= 0.0) || (bgidl <= 0.0) || (t1 <= 0.0) || (cgidl <= 0.0) || (vbs > 0.0)) - igisl = 0.0; - else - begin - t2 = bgidl / t1; - - if (t2 < 100.0) - igisl = agidl * weffcj * t1 * exp(-t2); - else - begin - igisl = agidl * weffcj * 3.720075976e-44; - igisl = igisl * t1; - end - - t4 = vbs * vbs; - t5 = -vbs * t4; - t6 = cgidl + t5; - t7 = t5 / t6; - t8 = 3.0 * cgidl * t4 / t6 / t6; - igisl = igisl * t7; - end - - //***************** Gate tunneling current (line 2024-2396, file b4ld.c) ****************// - if ((igcmod != 0.0) || (igbmod != 0.0)) - begin - v3 = vfbzb - Vgs_eff + vbseff - `DELTA_3; - - if (vfbzb<= 0.0) - t0 = sqrt(v3 * v3 - 4.0 * `DELTA_3 * vfbzb); - else - t0 = sqrt(v3 * v3 + 4.0 * `DELTA_3 * vfbzb); - - vfbeff = vfbzb- 0.5 * (v3 + t0); - voxacc = vfbzb- vfbeff; - - if (voxacc < 0.0) - voxacc = 0.0; - - t0 = 0.5 * k1ox; - t3 = Vgs_eff - vfbeff - vbseff - vgsteff; - - if (k1ox == 0.0) - voxdepinv = 0.0; - else if (t3 < 0.0) - voxdepinv = -t3; - else - begin - t1 = sqrt(t0 * t0 + t3); - t2 = t0 / t1; - voxdepinv = k1ox * (t1 - t0); - end - - voxdepinv = voxdepinv + vgsteff; - end - - if (igcmod == 1.0) - begin - t0 = vtm * nigc; - vxnvt = (Vgs_eff - type * vth0) / t0; - - if (vxnvt > `EXP_THRESHOLD) - vaux = Vgs_eff - type * vth0; - else if (vxnvt < -`EXP_THRESHOLD) - vaux = t0 * ln(1.0 + `MIN_EXP); - else - begin - expvxnvt = exp(vxnvt); - vaux = t0 * ln(1.0 + expvxnvt); - end - - t2 = Vgs_eff * vaux; - t11 = aechvb; - t12 = bechvb; - t3 = aigc * cigc - bigc; - t4 = bigc * cigc; - t5 = t12 * (aigc + t3 * voxdepinv - t4 * voxdepinv * voxdepinv); - - if (t5 > `EXP_THRESHOLD) - t6 = `MAX_EXP; - else if (t5 < -`EXP_THRESHOLD) - t6 = `MIN_EXP; - else - t6 = exp(t5); - - igc = t11 * t2 * t6; - - if (pigcd != -99.0) - modif_pigcd = pigcd; - else - begin - t11 = bechvb * toxe; - t12 = vgsteff + 1.0e-20; - t13 = t11 / t12 / t12; - modif_pigcd = t13 * (1.0 - 0.5 * vdseff / t12); - end - - t7 = -modif_pigcd * vdseff; - t8 = t7 * t7 + 2.0e-4; - - if (t7 > `EXP_THRESHOLD) - t9 = `MAX_EXP; - else if (t7 < -`EXP_THRESHOLD) - t9 = `MIN_EXP; - else - t9 = exp(t7); - - t0 = t8 * t8; - t1 = t9 - 1.0 + 1.0e-4; - t10 = (t1 - t7) / t8; - igcs = igc * t10; - t10 = (t7 * t9 - t1) / t8; - igcd = igc * t10; - t0 = vgs - vfbsd; - vgs_eff = sqrt(t0 * t0 + 1.0e-4); - t2 = vgs * vgs_eff; - t11 = aechvbedge; - t12 = bechvbedge; - t3 = aigsd * cigsd - bigsd; - t4 = bigsd * cigsd; - t5 = t12 * (aigsd + t3 * vgs_eff - t4 * vgs_eff * vgs_eff); - - if (t5 > `EXP_THRESHOLD) - t6 = `MAX_EXP; - else if (t5 < -`EXP_THRESHOLD) - t6 = `MIN_EXP; - else - t6 = exp(t5); - - igs = t11 * t2 * t6; - t0 = vgd - vfbsd; - vgd_eff = sqrt(t0 * t0 + 1.0e-4); - t2 = vgd * vgd_eff; - t5 = t12 * (aigsd + t3 * vgd_eff - t4 * vgd_eff * vgd_eff); - - if (t5 > `EXP_THRESHOLD) - t6 = `MAX_EXP; - else if (t5 < -`EXP_THRESHOLD) - t6 = `MIN_EXP; - else - t6 = exp(t5); - - igd = t11 * t2 * t6; - end - else - begin - igcs = 0.0; - igcd = 0.0; - igs = 0.0; - igd = 0.0; - end - - if (igbmod == 1.0) - begin - t0 = vtm * nigbacc; - t1 = -Vgs_eff + vbseff + vfbzb; - vxnvt = t1 / t0; - - if (vxnvt > `EXP_THRESHOLD) - vaux = t1; - else if (vxnvt < -(`EXP_THRESHOLD)) - begin - vaux = t0 * ln(1.0 + `MIN_EXP); - end - else - begin - expvxnvt = exp(vxnvt); - vaux = t0 * ln(1.0 + expvxnvt); - end - - t2 = (Vgs_eff - vbseff) * vaux; - t11 = 4.97232e-7 * weff * leff * toxratio; - t12 = -7.45669e11 * toxe; - t3 = aigbacc * cigbacc - bigbacc; - t4 = bigbacc * cigbacc; - t5 = t12 * (aigbacc + t3 * voxacc - t4 * voxacc * voxacc); - - if (t5 > `EXP_THRESHOLD) - t6 = `MAX_EXP; - else if (t5 < -`EXP_THRESHOLD) - t6 = `MIN_EXP; - else - t6 = exp(t5); - - igbacc = t11 * t2 * t6; - t0 = vtm * nigbinv; - t1 = voxdepinv - eigbinv; - vxnvt = t1 / t0; - - if (vxnvt > `EXP_THRESHOLD) - vaux = t1; - else if (vxnvt < -`EXP_THRESHOLD) - vaux = t0 * ln(1.0 + `MIN_EXP); - else - begin - expvxnvt = exp(vxnvt); - vaux = t0 * ln(1.0 + expvxnvt); - end - - t2 = (Vgs_eff - vbseff) * vaux; - t11 = t11 * 0.75610; - t12 = t12 * 1.31724; - t3 = aigbinv * cigbinv - bigbinv; - t4 = bigbinv * cigbinv; - t5 = t12 * (aigbinv + t3 * voxdepinv - t4 * voxdepinv * voxdepinv); - - if (t5 > `EXP_THRESHOLD) - t6 = `MAX_EXP; - else if (t5 < -`EXP_THRESHOLD) - t6 =`MIN_EXP; - else - t6 = exp(t5); - - igbinv = t11 * t2 * t6; - igb = igbinv + igbacc; - end - else - igb = 0.0; - - //***** Accounting of device fingers (line 2396-2452, file b4ld.c) *****// - if (nf != 1.0) - begin - cdrain = cdrain * nf; - csub = csub * nf; - igidl = igidl * nf; - igisl = igisl * nf; - igcs = igcs * nf; - igcd = igcd * nf; - igs = igs * nf; - igd = igd * nf; - igb = igb * nf; - end - - //***** CV model (line 2484-3288, file b4ld.c) *****// - - ccn = 1; - - if ((xpart < 0) || (ccn == 0)) - begin - qgate = 0.0; - qdrn = 0.0; - qsrc = 0.0; - qbulk = 0.0; - qgmid = 0.0; - end - else if (capmod == 0) - begin - if (vbseff < 0.0) - vbseff = Vbs; - else - vbseff = phi - phis; - - vfb = vfbcv; - vth = vfb + phi + k1ox * sqrtphis; - vgst = Vgs_eff - vth; - coxwl = coxe * weffcv * leffcv * nf; - arg1 = Vgs_eff - vbseff - vfb; - - if (arg1 <= 0.0) - begin - qgate = coxwl * arg1; - qbulk = -qgate; - qdrn = 0.0; - end - else if (vgst <= 0.0) - begin - t1 = 0.5 * k1ox; - t2 = sqrt(t1 * t1 + arg1); - qgate = coxwl * k1ox * (t2 - t1); - qbulk = -qgate; - qdrn = 0.0; - end - else - begin - two_third_coxwl = 2.0 * (coxe * weffcv * leffcv * nf) / 3.0; - abulkcv = abulk0 * abulkcvfactor; - vdsat = vgst / abulkcv; - - if (xpart > 0.5) - begin - /* 0/100 Charge partition model */ - if (vdsat <= Vds) - begin - /* saturation region */ - t1 = vdsat / 3.0; - qgate = coxwl * (Vgs_eff - vfb - phi - t1); - t2 = -two_third_coxwl * vgst; - qbulk = -(qgate + t2); - qdrn = 0.0; - end - else - begin - /* linear region */ - alphaz = vgst / vdsat; - t1 = 2.0 * vdsat - Vds; - t2 = Vds / (3.0 * t1); - t3 = t2 * Vds; - t9 = 0.25 * coxwl; - t4 = t9 * alphaz; - t7 = 2.0 * Vds - t1 - 3.0 * t3; - t8 = t3 - t1 - 2.0 * Vds; - qgate = coxwl * (Vgs_eff - vfb - phi - 0.5 * (Vds - t3)); - t10 = t4 * t8; - qdrn = t4 * t7; - qbulk = -(qgate + qdrn + t10); - end - end - else if (xpart < 0.5) - begin - /* 40/60 Charge partition model */ - if (Vds >= vdsat) - begin - /* saturation region */ - t1 = vdsat / 3.0; - qgate = coxwl * (Vgs_eff - vfb - phi - t1); - t2 = -two_third_coxwl * vgst; - qbulk = -(qgate + t2); - qdrn = 0.4 * t2; - end - else - begin - /* linear region */ - alphaz = vgst / vdsat; - t1 = 2.0 * vdsat - Vds; - t2 = Vds / (3.0 * t1); - t3 = t2 * Vds; - t9 = 0.25 * coxwl; - t4 = t9 * alphaz; - qgate = coxwl * (Vgs_eff - vfb - phi - 0.5 * (Vds - t3)); - t6 = 8.0 * vdsat * vdsat - 6.0 * vdsat * Vds + 1.2 * Vds * Vds; - t8 = t2 / t1; - t7 = Vds - t1 - t8 * t6; - qdrn = t4 * t7; - t7 = 2.0 * (t1 + t3); - qbulk = -(qgate - t4 * t7); - end - end - else - begin - /* 50/50 partitioning */ - if (Vds >= vdsat) - begin - /* saturation region */ - t1 = vdsat / 3.0; - qgate = coxwl * (Vgs_eff - vfb - phi - t1); - t2 = -two_third_coxwl * vgst; - qbulk = -(qgate + t2); - qdrn = 0.5 * t2; - end - else - begin - /* linear region */ - alphaz = vgst / vdsat; - t1 = 2.0 * vdsat - Vds; - t2 = Vds / (3.0 * t1); - t3 = t2 * Vds; - t9 = 0.25 * coxwl; - t4 = t9 * alphaz; - qgate = coxwl * (Vgs_eff - vfb - phi - 0.5 * (Vds - t3)); - t7 = t1 + t3; - qdrn = -t4 * t7; - qbulk = - (qgate + qdrn + qdrn); - end - end - end - end - else - begin - if (vbseff < 0.0) - vbseffcv = vbseff; - else - vbseffcv = phi - phis; - - coxwl = coxe * weffcv * leffcv * nf; - t0 = vtm * n * noff; - vgstnvt = (vgst - voffcv) / t0; - - if (vgstnvt > `EXP_THRESHOLD) - vgsteff = vgst - voffcv; - else if (vgstnvt < -`EXP_THRESHOLD) - vgsteff = t0 * ln(1.0 + `MIN_EXP); - else - vgsteff = t0 * ln(1.0 + exp(vgstnvt)); - - if (capmod == 1) - begin - v3 = vfbzb - Vgs_eff + vbseffcv - `DELTA_3; - - if (vfbzb <= 0.0) - t0 = sqrt(v3 * v3 - 4.0 * `DELTA_3 * vfbzb); - else - t0 = sqrt(v3 * v3 + 4.0 * `DELTA_3 * vfbzb); - - t1 = 0.5 * (1.0 + v3 / t0); - vfbeff = vfbzb - 0.5 * (v3 + t0); - qac0 = coxwl * (vfbeff - vfbzb); - t0 = 0.5 * k1ox; - t3 = Vgs_eff - vfbeff - vbseffcv - vgsteff; - - if (k1ox == 0.0) - begin - t1 = 0.0; - t2 = 0.0; - end - else if (t3 < 0.0) - begin - t1 = t0 + t3 / k1ox; - t2 = coxwl; - end - else - begin - t1 = sqrt(t0 * t0 + t3); - t2 = coxwl * t0 / t1; - end - - qsub0 = coxwl * k1ox * (t1 - t0); - abulkcv = abulk0 * abulkcvfactor; - vdsatcv = vgsteff / abulkcv; - t0 = vdsatcv - Vds - `DELTA_4; - t1 = sqrt(t0 * t0 + 4.0 * `DELTA_4 * vdsatcv); - - if (t0 >= 0.0) - vdseffcv = vdsatcv - 0.5 * (t0 + t1); - else - begin - t3 = (`DELTA_4 + `DELTA_4) / (t1 - t0); - t4 = 1.0 - t3; - t5 = vdsatcv * t3 / (t1 - t0); - vdseffcv = vdsatcv * t4; - end - - if (Vds == 0.0) - vdseffcv = 0.0; - - t0 = abulkcv * vdseffcv; - t1 = 12.0 * (vgsteff - 0.5 * t0 + 1.0e-20); - t2 = t0 / t1; - t3 = t0 * t2; - qgate = coxwl * (vgsteff - 0.5 * t0 + t3); - t7 = 1.0 - abulkcv; - qbulk = coxwl * t7 * (0.5 * vdseffcv - t3); - - if (xpart > 0.5) - begin - /* 0/100 Charge petition model */ - t1 = t1 + t1; - qsrc = -coxwl * (0.5 * vgsteff + 0.25 * t0 - t0 * t0 / t1); - end - else if (xpart < 0.5) - begin - /* 40/60 Charge petition model */ - t1 = t1 / 12.0; - t2 = 0.5 * coxwl / (t1 * t1); - t3 = vgsteff * (2.0 * t0 * t0 / 3.0 + vgsteff * (vgsteff - 4.0 * t0 / 3.0)) - 2.0 * t0 * t0 * t0 / 15.0; - qsrc = -t2 * t3; - end - else - /* 50/50 Charge petition model */ - qsrc = -0.5 * (qgate + qbulk); - - qgate = qgate + qac0 + qsub0; - qbulk = qbulk - (qac0 + qsub0); - qdrn = -(qgate + qbulk + qsrc); - end - else if (capmod == 2) - begin - v3 = vfbzb - Vgs_eff + vbseffcv - `DELTA_3; - - if (vfbzb <= 0.0) - t0 = sqrt(v3 * v3 - 4.0 * `DELTA_3 * vfbzb); - else - t0 = sqrt(v3 * v3 + 4.0 * `DELTA_3 * vfbzb); - - t1 = 0.5 * (1.0 + v3 / t0); - vfbeff = vfbzb - 0.5 * (v3 + t0); - tox = 1.0e8 * toxp; - t0 = (Vgs_eff - vbseffcv - vfbzb) / tox; - tmp = t0 * acde; - - if ((-`EXP_THRESHOLD < tmp) && (tmp < `EXP_THRESHOLD)) - tcen = ldeb * exp(tmp); - else if (tmp <= -`EXP_THRESHOLD) - tcen = ldeb * `MIN_EXP; - else - tcen = ldeb * `MAX_EXP; - - link = 1.0e-3 * toxp; - v3 = ldeb - tcen - link; - v4 = sqrt(v3 * v3 + 4.0 * link * ldeb); - tcen = ldeb - 0.5 * (v3 + v4); - ccen = `EPSSI / tcen; - t2 = coxp / (coxp + ccen); - coxeff = t2 * ccen; - coxwlcen = coxwl * coxeff / coxe; - qac0 = coxwlcen * (vfbeff - vfbzb); - t0 = 0.5 * k1ox; - t3 = Vgs_eff - vfbeff - vbseffcv - vgsteff; - - if (k1ox == 0.0) - begin - t1 = 0.0; - t2 = 0.0; - end - else if (t3 < 0.0) - begin - t1 = t0 + t3 / k1ox; - t2 = coxwlcen; - end - else - begin - t1 = sqrt(t0 * t0 + t3); - t2 = coxwlcen * t0 / t1; - end - - qsub0 = coxwlcen * k1ox * (t1 - t0); - - if (k1ox <= 0.0) - begin - denomi = 0.25 * moin * vtm; - t0 = 0.5 * sqrtphi; - end - else - begin - denomi = moin * vtm * k1ox * k1ox; - t0 = k1ox * sqrtphi; - end - - t1 = 2.0 * t0 + vgsteff; - deltaphi = vtm * ln(1.0 + t1 * vgsteff / denomi); - tox = tox + tox; - t0 = (vgsteff + vtfbphi2) / tox; - tmp = exp(0.7 * ln(t0)); - t1 = 1.0 + tmp; - tcen = 1.9e-9 / t1; - ccen = `EPSSI / tcen; - t0 = coxp / (coxp + ccen); - coxeff = t0 * ccen; - coxwlcen = coxwl * coxeff / coxe; - abulkcv = abulk0 * abulkcvfactor; - vdsatcv = (vgsteff - deltaphi) / abulkcv; - t0 = vdsatcv - Vds - `DELTA_4; - t1 = sqrt(t0 * t0 + 4.0 * `DELTA_4 * vdsatcv); - - if (t0 >= 0.0) - vdseffcv = vdsatcv - 0.5 * (t0 + t1); - else - begin - t3 = (`DELTA_4 + `DELTA_4) / (t1 - t0); - t4 = 1.0 - t3; - vdseffcv = vdsatcv * t4; - end - - if (Vds == 0.0) - vdseffcv = 0.0; - - t0 = abulkcv * vdseffcv; - t1 = vgsteff - deltaphi; - t2 = 12.0 * (t1 - 0.5 * t0 + 1.0e-20); - t3 = t0 / t2; - qgate = coxwlcen * (t1 - t0 * (0.5 - t3)); - t7 = 1.0 - abulkcv; - qbulk = coxwlcen * t7 * (0.5 * vdseffcv - t0 * vdseffcv / t2); - - if (xpart > 0.5) - /* 0/100 partition */ - qsrc = -coxwlcen * (t1 / 2.0 + t0 / 4.0 - 0.5 * t0 * t0 / t2); - else if (xpart < 0.5) - begin - /* 40/60 partition */ - t2 = t2 / 12.0; - t3 = 0.5 * coxwlcen / (t2 * t2); - t4 = t1 * (2.0 * t0 * t0 / 3.0 + t1 * (t1 - 4.0 * t0 / 3.0)) - 2.0 * t0 * t0 * t0 / 15.0; - qsrc = -t3 * t4; - end - else - /* 50/50 partition */ - qsrc = -0.5 * qgate; - - qgate = qgate + qac0 + qsub0 - qbulk; - qbulk = qbulk - (qac0 + qsub0); - qdrn = -(qgate + qbulk + qsrc); - end - end - - if (ccn == 1) - qsrc = -(qgate + qbulk + qdrn); - - //***** Junction Diode CV Model (line 3333-3450, file b4ld.c) *****// - if (ccn == 1) - begin - czbd = cjd_temp * adeff; - czbs = cjs_temp * aseff; - czbdsw = cjswd_temp * pdeff; - czbdswg = cjswgd_temp * weffcj * nf; - czbssw = cjsws_temp * pseff; - czbsswg = cjswgs_temp * weffcj * nf; - - /* Source Bulk Junction */ - if (vbs_jct == 0.0) - qbs = 0.0; - else if (vbs_jct < 0.0) - begin - if (czbs > 0.0) - begin - arg = 1.0 - vbs_jct / phibs; - - if (mjs == 0.5) - sarg = 1.0 / sqrt(arg); - else - sarg = exp(-mjs * ln(arg)); - - qbs = phibs * czbs * (1.0 - arg * sarg) / (1.0 - mjs); - end - else - qbs = 0.0; - - if (czbssw > 0.0) - begin - arg = 1.0 - vbs_jct / phibsws; - - if (mjsws == 0.5) - sarg = 1.0 / sqrt(arg); - else - sarg = exp(-mjsws * ln(arg)); - - qbs = qbs + phibsws * czbssw * (1.0 - arg * sarg) / (1.0 - mjsws); - end - - if (czbsswg > 0.0) - begin - arg = 1.0 - vbs_jct / phibswgs; - - if (mjswgs == 0.5) - sarg = 1.0 / sqrt(arg); - else - sarg = exp(-mjswgs * ln(arg)); - - qbs = qbs + phibswgs * czbsswg * (1.0 - arg * sarg) / (1.0 - mjswgs); - end - end - else - begin - t0 = czbs + czbssw + czbsswg; - t1 = vbs_jct * (czbs * mjs / phibs + czbssw * mjsws / phibsws + czbsswg * mjswgs / phibswgs); - qbs = vbs_jct * (t0 + 0.5 * t1); - end - - /* Drain Bulk Junction */ - if (vbd_jct == 0.0) - qbd = 0.0; - else if (vbd_jct < 0.0) - begin - if (czbd > 0.0) - begin - arg = 1.0 - vbd_jct / phibd; - - if (mjd == 0.5) - sarg = 1.0 / sqrt(arg); - else - sarg = exp(-mjd * ln(arg)); - - qbd = phibd * czbd * (1.0 - arg * sarg) / (1.0 - mjd); - end - else - qbd = 0.0; - - if (czbdsw > 0.0) - begin - arg = 1.0 - vbd_jct / phibswd; - - if (mjswd == 0.5) - sarg = 1.0 / sqrt(arg); - else - sarg = exp(-mjswd * ln(arg)); - - qbd = qbd + phibswd * czbdsw * (1.0 - arg * sarg) / (1.0 - mjswd); - end - - if (czbdswg > 0.0) - begin - arg = 1.0 - vbd_jct / phibswgd; - - if (mjswgd == 0.5) - sarg = 1.0 / sqrt(arg); - else - sarg = exp(-mjswgd * ln(arg)); - - qbd = qbd + phibswgd * czbdswg * (1.0 - arg * sarg) / (1.0 - mjswgd); - end - end - else - begin - t0 = czbd + czbdsw + czbdswg; - t1 = vbd_jct * (czbd * mjd / phibd + czbdsw * mjswd / phibswd + czbdswg * mjswgd / phibswgd); - qbd = vbd_jct * (t0 + 0.5 * t1); - end - end - - //***** Overlap capacitances (line 3519-3558, file b4ld.c) *****// - if (ccn == 1) - begin - if (capmod == 0) - begin - cgdo = param_cgdo; - cgso = param_cgso; - qgdo = param_cgdo * vgd; - qgso = param_cgso * vgs; - end - else /* For both capMod == 1 and 2 */ - begin - t0 = vgd + `DELTA_1; - t1 = sqrt(t0 * t0 + 4.0 * `DELTA_1); - t2 = 0.5 * (t0 - t1); - t3 = weffcv * cgdl; - t4 = sqrt(1.0 - 4.0 * t2 / ckappad); - cgdo = param_cgdo + t3 - t3 * (1.0 - 1.0 / t4) * (0.5 - 0.5 * t0 / t1); - qgdo = (param_cgdo + t3) * vgd - t3 * (t2 + 0.5 * ckappad * (t4 - 1.0)); - t0 = vgs + `DELTA_1; - t1 = sqrt(t0 * t0 + 4.0 * `DELTA_1); - t2 = 0.5 * (t0 - t1); - t3 = weffcv * cgsl; - t4 = sqrt(1.0 - 4.0 * t2 / ckappas); - cgso = param_cgso + t3 - t3 * (1.0 - 1.0 / t4) * (0.5 - 0.5 * t0 / t1); - qgso = (param_cgso + t3) * vgs - t3 * (t2 + 0.5 * ckappas * (t4 - 1.0)); - end - - if (nf != 1.0) - begin - cgdo = cgdo * nf; - cgso = cgso * nf; - qgdo = qgdo * nf; - qgso = qgso * nf; - end - - if (mode > 0) - begin - qdrn = qdrn - qgdo; - - if (rgatemod == 3) - begin - qgmb = cgbo * vgmb; - qgmid = qgdo + qgso + qgmb; - qbulk = qbulk - qgmb; - qsrc = -(qgate + qgmid + qbulk + qdrn); - end - else - begin - qgb = cgbo * vgb; - qgate = qgate + qgdo + qgso + qgb; - qbulk = qbulk - qgb; - qsrc = -(qgate + qbulk + qdrn); - end - end - else - begin - qsrc = qdrn - qgso; - - if (rgatemod == 3) - begin - qgmb = cgbo * vgmb; - qgmid = qgdo + qgso + qgmb; - qbulk = qbulk - qgmb; - qdrn = -(qgate + qgmid + qbulk + qsrc); - end - else - begin - qgb = cgbo * vgb; - qgate = qgate + qgdo + qgso + qgb; - qbulk = qbulk - qgb; - qdrn = -(qgate + qbulk + qsrc); - end - end - - qd = qdrn - qbd; - qs = qsrc - qbs; - - if (rbodymod == 0) - qb = qbulk + qbd + qbs; - else - qb = qbulk; - end - - //****** Here all currents going through the device are taken in account ******// - I(sourceb, sourcep) <+ type * cbs; - I(drainb, drainp) <+ type * cbd; - - if (igbmod == 1) - I(bulk, gatep) <+ -type * igb; - - if (igcmod == 1) - begin - I(source, gatep) <+ -type * (igs + igcs); - I(drain, gatep) <+ -type * (igd + igcd); - end - - if (mode == 1) - begin - I(drainp , sourcep) <+ type * cdrain; - I(drainp , bulkp) <+ type * (csub + igidl); - I(sourcep, bulkp) <+ type * igisl; - end - else - begin - I(drainp , sourcep) <+ -type * cdrain; - I(drainp , bulkp) <+ type * (csub + igisl); - I(sourcep, bulkp) <+ type * igidl; - end - - if (rdsmod == 0) - begin -// Voltage short changed to current form with 1m Ohm resistor, MEB -// V(source, sourcep) <+ 0; - I(source, sourcep) <+ V(source, sourcep)*1e3; -// V(drainp, drain) <+ 0; - I(drainp, drain) <+ V(drainp, drain)*1e3; - end - else - begin - I(drain, drainp) <+ type * gdtot * vded; - I(source, sourcep) <+ type * gstot * vses; - end - - if (rgatemod == 0) - begin -// V(gate, gatem) <+ 0; - I(gate, gatem) <+ V(gate, gatem)*1e3; -// V(gatem, gatep) <+ 0; - I(gatem, gatep) <+ V(gatem, gatep)*1e3; - end - else if (rgatemod == 1) - begin -// V(gatep, gatem) <+ 0; - I(gatep, gatem) <+ V(gatep, gatem)*1e3; - I(gate, gatem) <+ type * grgeltd * vgeg; - end - else if (rgatemod == 2) - begin -// V(gatep, gatem) <+ 0; - I(gatep, gatem) <+ V(gatep, gatem)*1e3; - I(gate, gatem) <+ type * gcrg * vgeg; - end - else - begin - I(gatem, gatep) <+ type * gcrg * vgmg; - I(gate, gatem) <+ type * grgeltd * vgegm; - `ifdef RGATE3 - I(gatem, sourcep) <+ type * ddt(qgmid); - `endif - end - - if (rbodymod == 0) - begin -// V(bulk, bulkp) <+ 0; - I(bulk, bulkp) <+ V(bulk, bulkp)*1e3; -// V(bulkp, sourceb) <+ 0; - I(bulkp, sourceb) <+ V(bulkp, sourceb)*1e3; -// V(bulkp, drainb) <+ 0; - I(bulkp, drainb) <+ V(bulkp, drainb)*1e3; - end - else - begin - I(sourceb, bulkp) <+ -type * grbps * vbsb; - I(drainb, bulkp) <+ -type * grbpd * vbdb; - I(bulk, bulkp) <+ type * grbpb * vbeb; - I(bulk, sourceb) <+ type * grbsb * vbesb; - I(bulk, drainb) <+ type * grbdb * vbedb; - end - - I(gatep, sourcep) <+ type * ddt(qgate); - I(drainp, sourcep) <+ type * ddt(qd); - I(bulkp, sourcep) <+ type * ddt(qb); - -// -// Noise addeed to Qucs ADMS 2.30 port, June 2013 M.E. Brinson. -// Basic noise implementation for TNOIDMOD = 0. -// - if (TNOIMOD == 0) - begin - fourkt = 5.5226012e-23*Temp; - leffx2 = leff*leff; - I(drainp, sourcep) <+ white_noise( (fourkt*NTNOI*ueff*abs(qd+qs)) / leffx2, "channel" ); - - end - - if (FNOIMOD == 0) - begin - leffx2 = leff*leff; - I(drainp, sourcep) <+ flicker_noise( (KF*pow(abs(cdrain), AF)) / (cox*leffx2), EF, "flicker" ); - end - - I(drain, drainp) <+ white_noise( abs(fourkt*gdtot), "thermal" ); - I(sourcep, source) <+ white_noise( abs(fourkt*gstot), "thermal" ); - -// End of noise code. - - `ifdef RBODY - if (rbodymod == 1) - begin - I(drainb, sourcep) <+ type * ddt(qbd); - I(sourceb, sourcep) <+ type * ddt(qbs); - end - `endif - - end - endmodule diff --git a/qucs-core/src/components/verilog/bsim4v30pMOS.va b/qucs-core/src/components/verilog/bsim4v30pMOS.va deleted file mode 100644 index 25f0c257ca..0000000000 --- a/qucs-core/src/components/verilog/bsim4v30pMOS.va +++ /dev/null @@ -1,4498 +0,0 @@ -/*****************************************************************/ -/* Berkeley BSIM4.3.0 Verilog-A model */ -/*****************************************************************/ -// UPDATED March 8,19 2004 -// Contributed By: -// Geoffrey Coram, Ph.D Senior CAD Engineer Analog Devices, Inc. -// -// Qucs port of BSIM4v30 Mike Brinson, May 2013. -// Open source Verilog-A code can be found at: -// "Silvaco Offers Free Open-Source Verilog-A Device Models": -// http://www.silvaco.com/news/pressreleases/2004_03_02_01.html -// https://dynamic.silvaco.com/dynamicweb/jsp/downloads/EntryAction.do?action=silen-menu&key=2206&format=22 -// -// Technical details of the BSIM4.3.4 compact device model can be found at: -// William Liu, "MOSFET Models for SPICE Simulation including BSIM3v3 and BSIM4", -// Wiley _Interscience, John Wiley & Sons Inc., New York, 2001. -// ISBN: 0-471-9697-4. -// -// Changes to original code needed to compile with ADMS 2.30/Qucs are marked below. -// - -`define VOLTAGE_MAXDELTA 0.3 - -// `include "discipline.h" Changed MEB -`include "discipline.vams" - -// The following line must be uncommented if RGATEMOD parameter is 3. -//`define RGATE3 -// The following line must be uncommented if RBODYMOD parameter is set to 1. -//`define RBODY - - -//****** Physical constants ******// -`define EPS0 8.85418e-12 -`define KboQ 8.617087e-5 -`define EPSSI 1.03594e-10 -`define Charge_q 1.60219e-19 -`define Charge 1.6021918e-19 - -//****** Mathematical constants and constants of limitation ******// -`define PI 3.141592654 -`define EXP_THRESHOLD 34.0 -`define MIN_EXP 1.713908431e-15 -`define MAX_EXP 5.834617425e14 - -//****** Constants for the model ******// -`define MM 3 -`define DELTA 1.0e-9 -`define DELTA_1 0.02 -`define DELTA_3 0.02 -`define DELTA_4 0.02 - - -//****** Beginning of the model ******// -module bsim4v30pMOS(drain, gate, source, bulk); - inout drain, gate, source, bulk; - electrical drain, gate, source, bulk; // External nodes - electrical drainp, sourcep; // Internal nodes for rdsmod - electrical gatep, gatem; // Internal nodes for rgatemod - electrical drainb, sourceb, bulkp; // Internal nodes for rbodymod - - - //****** Definition of all instance and model parameters *****// - //****** To customize your model to fit your device, just*****// - //****** modify those parameters in your modelcard *****// - //****** -99.0 is used for parameters which are *****// - //****** calculated if you don't determine them *****// - - //****** Minimum conductance ******// - parameter GMIN = 1e-12; - - //****** Geometrical Parameters ******// - parameter PS = 12e-6; - parameter PD = 12e-6; - parameter AS = 12e-12; - parameter AD = 12e-12; - - //****** Overlap Capacitance Parameters ******// - parameter CGBO = -99.0; // Gate-bulk overlap capacitance per length - parameter CGDO = -99.0; // Gate-drain overlap capacitance per width - parameter CGSO = -99.0; // Gate-source overlap capacitance per width - - //****** Mosfet type ******// - // parameter TYPE = -1; // Type = TYPE = PMOS - - //****** Parameters L and W ******// - parameter L = 3e-6; // Length - parameter W = 6e-6; // Width - - //****** Model Selectors/Controllers ******// // Parameter name changes MEB - parameter MOBMOD = -99.0; // Mobility model selector - parameter RDSMOD = -99.0; // Bias-dependent source/drain resistance model selector - parameter IGCMOD = 0; // Gate-to-channel tunneling current model selector - parameter IGBMOD = 0; // Gate-to-substrate tunneling current model selector - parameter CAPMOD = 2; // Capacitance model selector - parameter RGATEMOD = 2; // Gate resistance model selector - parameter RBODYMOD = 0; // Substrate resistance network model selector - parameter DIOMOD = 1; // Source/drain junction diode IV model selctor - parameter TEMPMOD = -99.0; // Temperature mode selector - parameter GEOMOD = 0; // Geometry-dependent parasitics model selector - parameter RGEOMOD = 0; // Source/drain diffusion resistance and contact model selector - parameter PERMOD = 1; // - parameter TNOIMOD = 0; // Thermal noise model selector = 0 BSIM 3 model // Added MEB - parameter FNOIMOD = 0; // Flicker noise model selector = 0 simple flicker model // Added MEB - - //****** Process Parameters ******// - parameter EPSROX = 3.9; // Gate dielctric constant relative to vacuum - parameter TOXE = -99.0; // Electrical gate equivalent oxide thickness - parameter TOXP = -99.0; // = TOXE Physical gate equivalent oxide thickness - parameter TOXM = -99.0; // = TOXE Tox at which parameters are extracted - parameter DTOX = 0.0; // Defined as TOXE-TOXP - parameter XJ = 1.5e-7; // S/D junction depth - parameter GAMMA1 = -99.0; // Body-effect coefficient near the surface - parameter GAMMA2 = -99.0; // Body-effect coefficient in the bulk - parameter NDEP = -99.0; // Channel doping concentration at depletion edge for zero body bias - parameter NSUB = 6.0e16; // Substrate doping concentration - parameter NGATE = 0.0; // Poly Si gate doping concentration - parameter NSD = 1.0e20; // S/D doping concentration - parameter VBX = -99.0; // Vbs at which the depletion region width equals XT - parameter XT = 1.55e-7; // Doping depth - parameter RSH = 0.0; // S/D sheet resistance - parameter RSHG = 0.0; // Gate electrode sheet resistance - - //****** Basic Parameters ******// - parameter VTH0 = -0.6; // Long-channel threshold voltage at Vbs=0 - parameter VFB = -99.0; // Flat-band voltage - parameter PHIN = 0.0; // Non-uniform vertical doping effect on surface potential - parameter K1 = -99.0; // First-order body bias coefficient - parameter K2 = -99.0; // Second-order body bias coefficient - parameter K3 = 80.0; // Narrow width coefficient - parameter K3B = 0.0; // Body effect coefficient of K3 - parameter W0 = 2.5e-6; // Narrow width parameter - parameter LPE0 = 1.74e-7; // Lateral non-uniform doping parameter at Vbs=0 - parameter LPEB = 0.0; // Lateral non-uniform doping effect on K1 - parameter VBM = -3.0; // Maximum applied body bias in VTH0 calculation - parameter DVT0 = 2.2; // First coefficient of short-channel effect on Vth - parameter DVT1 = 0.53; // Second coefficient of short-channel effect on Vth - parameter DVT2 = -0.032; // Body-bias coefficient of short-channel effect on Vth - parameter DVTP0 = 0.0; // First coefficient of drain-induced Vth shift due to for long-channel pocket devices - parameter DVTP1 = 0.0; // Second coefficient of drain-induced Vth shift due to for long-channel pocket devices - parameter DVT0W = 0.0; // First coefficient of narrow width effect on Vth for small channel length - parameter DVT1W = 5.3e6; // Second coefficient of narrow width effect on Vth for small channel length - parameter DVT2W = -0.032; // Body-bias coefficient of narrow width effect on Vth for small channel length - parameter U0 = -99.0; // Low-field mobility - parameter UA = -99.0; // Coefficient of first-order mobility degradation due to vertical field - parameter UB = 1.0e-19; // Coefficient of second-order mobility degradation due to vertical field - parameter UC = -99.0; // Coefficient of mobility degradation due to body-bias effect - parameter EU = -99.0; // Exponent for mobility degradation of MOBMOD=2 - parameter VSAT = 8.0e4; // Saturation velocity - parameter A0 = 1.0; // Coefficient of channel-length dependence of bulk charge effect - parameter AGS = 0.0; // Coefficient of Vgs dependence of bulk charge effect - parameter B0 = 0.0; // Bulk charge effect coefficient for channel width - parameter B1 = 0.0; // Bulk charge effect width offset - parameter KETA = -0.047; // Body-bias coefficient of bulk charge effect - parameter A1 = 0.0; // First non-saturation effect parameter - parameter A2 = 1.0; // Second non-saturation factor - parameter WINT = 0.0; // Channel-width offset parameter - parameter LINT = 0.0; // Channel-length offset parameter - parameter DWG = 0.0; // Coefficient of gate bias dependence of Weff - parameter DWB = 0.0; // Coefficient of body bias dependence of Weff - parameter VOFF = -0.08; // Offset voltage in subthreshold region for large W and L - parameter VOFFL = 0.0; // Channel-length dependence of VOFF - parameter MINV = 0.0; // Vgsteff fitting parameter for moderate inversion condition - parameter NFACTOR = 1.0; // Subthreshold swing factor - parameter ETA0 = 0.08; // DIBL coefficient in subthreshold region - parameter ETAB = -0.07; // Body-bias coefficient for the subthreshold DIBL effect - parameter DROUT = 0.56; // Channel-length dependence of DIBL effect on Rout - parameter DSUB = 0.56; // = DROUT DIBL coefficient exponent in subthreshold region - parameter CIT = 0.0; // Interface trap capacitance - parameter CDSC = 2.4e-4; // Coupling cpacitance between S/D and channel - parameter CDSCB = 0.0; // Body-bias sensivity of CDSC - parameter CDSCD = 0.0; // Drain-bias sensivity of CDSC - parameter PCLM = 1.3; // Channel-length modulation parameter - parameter PDIBL1 = 0.39; // Parameter for DIBL effect on Rout - parameter PDIBL2 = 0.0086; // Parameter for DIBL effect on Rout - parameter PDIBLB = 0.0; // Body-bias coefficient of DIBL effect on Rout - parameter PSCBE1 = 4.24e8; // First substrate current induced body-effect parameter - parameter PSCBE2 = 1.0e-5; // Second substrate current induced body-effect parameter - parameter PVAG = 0.0; // Gate-bias dependence of Early voltage - parameter DELTA = 0.01; // Parameter for DC Vdseff - parameter FPROUT = 0.0; // Effect of pocket implant on Rout degradation - parameter PDITS = 0.0; // Impact of drain-induced Vth shift on Rout - parameter PDITSD = 0.0; // Vds dependence of drain-induced Vth shift for Rout - parameter PDITSL = 0.0; // Channel-length dependence of drain-induced Vth shift for Rout - parameter LAMBDA = -99.0; // Velocity overshoot coefficient - parameter VTL = -99.0; // Thermal velocity - parameter LC = 5.0e-9; // Velocity back scattering coefficient - parameter XN = 3.0; // Velocity back scattering coefficient - - //****** Assymetric and Bias-Dependent Rds Model Parameters ******// - parameter RDSW = 200.0; // Zero bias LDD resistance per unit width for RDSMOD=0 - parameter RDSWMIN = 0.0; // LDD resistance per unit width at high Vgs and zero Vbs for RDSMOD=0 - parameter RDW = 100.0; // Zero bias lightly-doped drain resistance Rd per unit width for RDSMOD=1 - parameter RDWMIN = 0.0; // Lightly-doped drain resistance Rd per unit width at high Vgs and zero Vbs for RDSMOD=1 - parameter RSW = 100.0; // Zero bias lightly-doped source resistance Rd per unit width for RDSMOD=1 - parameter RSWMIN = 0.0; // Lightly-doped source resistance Rd per unit width at high Vgs and zero Vbs for RDSMOD=1 - parameter PRWG = 1.0; // Gate-bias dependence of LDD resistance - parameter PRWB = 0.0; // Body-bias dependence of LDD resistance - parameter WR = 1.0; // Channel-width dependence parameter of LDD resistance - parameter NRS = -99.0; // Number of source diffusion squares - parameter NRD = -99.0; // Number of drain diffusion squares - - //****** Impact Ionization Current Model Parameters ******// - parameter ALPHA0 = 0.0; // First parameter of impact ionization current - parameter ALPHA1 = 0.0; // Isub parameter length scaling - parameter BETA0 = 30.0; // Second parameter of impact ionization current - - //****** Gate Induced Drain Leakage Model Parameters ******// - parameter AGIDL = 0.0; // Pre-exponential coefficient for GIDL - parameter BGIDL = 2.3e9; // Exponential coefficient for GIDL - parameter CGIDL = 0.5; // Parameter for body-bias effect on GIDL - parameter EGIDL = 0.8; // Fitting parameter for band bending for GIDL - - //****** Gate Dielectric Tunneling Current Model Parameters ******// - parameter AIGBACC = 0.43; // Parameter for Igb in accumulation - parameter BIGBACC = 0.054; // Parameter for Igb in accumulation - parameter CIGBACC = 0.075; // Parameter for Igb in accumulation - parameter NIGBACC = 1.0; // Parameter for Igb in accumulation - parameter AIGBINV = 0.35; // Parameter for Igb in inversion - parameter BIGBINV = 0.03; // Parameter for Igb in inversion - parameter CIGBINV = 0.006; // Parameter for Igb in inversion - parameter EIGBINV = 1.1; // Parameter for Igb in inversion - parameter NIGBINV = 3.0; // Parameter for Igb in inversion - parameter AIGC = -99.0; // Parameter for Igcs and Igcd - parameter BIGC = -99.0; // Parameter for Igcs and Igcd - parameter CIGC = -99.0; // Parameter for Igcs and Igcd - parameter AIGSD = -99.0; // Parameter for Igs and Igd - parameter BIGSD = -99.0; // Parameter for Igs and Igd - parameter CIGSD = -99.0; // Parameter for Igs and Igd - parameter DLCIG = 0.0; // = LINT S/D overlap length for Igs and Igd - parameter NIGC = 1.0; // Parameter for Igcs, Igcd, Igs and Igd - parameter POXEDGE = 1.0; // Factor for the gate oxide thickness in S/D overlap regions - parameter PIGCD = 1.0; // Vds dependence of Igcs and Igcd - parameter NTOX = 1.0; // Exponent for the gate oxide ratio - parameter TOXREF = 3.0e-9; // Nominal gate oxide thickness for gate dielectric tunneling current model only - - //****** Charge and Capacitance Model Parameters ******// - parameter XPART = 0.4; // Charge partition parameter - parameter CGS0 = 0.0; // Non LDD region source-gate overlap capacitance per unit channel width - parameter CGD0 = 0.0; // Non LDD region drain-gate overlap capacitance per unit channel width - parameter CGB0 = 0.0; // Gate-bulk overlap capcitance per unit channel length - parameter CGSL = 0.0; // Overlap capacitance between gate and lightly-doped source region - parameter CGDL = 0.0; // Overlap capacitance between gate and lightly-doped source region - parameter CKAPPAS = 0.6; // Coefficient of bias-dependent overlap capacitance for the source side - parameter CKAPPAD = 0.6; // = CKAPPAS Coefficient of bias-dependent overlap capacitance for the drain side - parameter CF = -99.0; // Fringing field capacitance - parameter CLC = 1.0e-7; // Constant term for the short channel model - parameter CLE = 0.6; // Exponential term for the short channel model - parameter DLC = 0.0; // = LINT Channel-length offset parameter for CV model - parameter DWC = 0.0; // = WINT Channel-width offset parameter for CV model - parameter VFBCV = -1.0; // Flat-band voltage parameter - parameter NOFF = 1.0; // CV parameter in Vgstett,CV for weak to strong inversion - parameter VOFFCV = 0.0; // CV parameter in Vgstett,CV for weak to strong inversion - parameter ACDE = 1.0; // Exponential coefficient for charge thickness in CAPMOD=2 for accumulation and depletion regions - parameter MOIN = 15.0; // Coefficient for the gate-bias dependent surface potential - - //****** High-Speed/RF Model Parameters ******// - parameter XRCRG1 = 12.0; // Parameter for distributed channel-resistance effect for intrinsic-input resistance - parameter XRCRG2 = 1.0; // Parameter to account for the excess channel diffusion resistance - parameter RBPB = 50.0; // Resistance connected between bNodePrime and bNode - parameter RBPD = 50.0; // Resistance connected between bNodePrime and dbNode - parameter RBPS = 50.0; // Resistance connected between bNodePrime and sbNode - parameter RBDB = 50.0; // Resistance connected between dbNodePrime and bNode - parameter RBSB = 50.0; // Resistance connected between sbNodePrime and bNode - parameter GBMIN = 1.0e-12; // Conductance in parallel with each of the five substrate resistances to avoid potential numerical instability - - //****** Layout-Dependent Parasistics Model Parameters ******// - parameter DMCG = 0.0; // Distance from S/D contact center to the gate edge - parameter DMCI = 0.0; // = DMCG Distance from S/D contact center to the isolation edge in the channel-length direction - parameter DMDG = 0.0; // Same as DMCG but for merged device only - parameter DMCGT = 0.0; // DMCG of test structures - parameter NF = 1.0; // Number of device fingers - parameter DWJ = 0.0; // = DWC Offset of the S/D junction width - parameter MIN = 0.0; // Whether to minimize the number of drain or source diffusions for even-number fingered device - parameter XGW = 0.0; // Distance from the gate contact to the channel edge - parameter XGL = 0.0; // Offset of the gate length due to variations in patterning - parameter XL = 0.0; // Channel length offset due to mask/etch effect - parameter XW = 0.0; // Channel width offset due to mask/etch effect - parameter NGCON = 1.0; // Number of gate contacts - - //****** Assymetric Source/Drain Junction Diode Model Parameters ******// - parameter IJTHSREV = 0.1; // Limiting current in reverse bias region - parameter IJTHDREV = 0.1; // = IJTHSREV Idem - parameter IJTHSFWD = 0.1; // Limiting current in forward bias region - parameter IJTHDFWD = 0.1; // = IJTHSFWD Idem - parameter XJBVS = 1.0; // Fitting parameter for diode breakdown - parameter XJBVD = 1.0; // = XJBVS Idem - parameter BVS = 10.0; // Breakdown voltage - parameter BVD = 10.0; // = BVS Idem - parameter JSS = 1.0e-4; // Bottom junction reverse saturation current density - parameter JSD = 1.0e-4; // = JSS Idem - parameter JSWS = 0.0; // Isolation-edge sidewall reverse saturation current density - parameter JSWD = 0.0; // = JSWS Idem - parameter JSWGS = 0.0; // Gate-edge sidewall reverse saturation current density - parameter JSWGD = 0.0; // = JSWGS Idem - parameter CJS = 5.0e-4; // Bottom junction capacitance per unit area at zero bias - parameter CJD = 5.0e-4; // = CJS Idem - parameter MJS = 0.5; // Bottom junction capacitance grating coefficient - parameter MJD = 0.5; // = MJS Idem - parameter MJSWS = 0.33; // Isolation-edge sidewall junction capacitance grading coefficient - parameter MJSWD = 0.33; // = MJSWS Idem - parameter CJSWS = 5.0e-10; // Isolation-edge sidewall junction capacitance per unit area - parameter CJSWD = 5.0e-10; // = CJSWS Idem - parameter CJSWGS = 5.0e-10; // = CJSWS Gate-edge sidewall junction capacitance per unit length - parameter CJSWGD = 5.0e-10; // = CJSWS Idem - parameter MJSWGS = 0.33; // = MJSWS Gate-edge sidewall junction capacitance grading coefficient - parameter MJSWGD = 0.33; // = MJSWS Idem - parameter PBS = 1.0; // Bottom junction built-in potential - parameter PBD = 1.0; // = PBS Idem - parameter PBSWS = 1.0; // Isoaltion-edge sidewall junction built-in potential - parameter PBSWD = 1.0; // = PBSWS Idem - parameter PBSWGS = 1.0; // = PBSWS Gare-edge sidewall junction built-in potential - parameter PBSWGD = 1.0; // = PBSWS Idem - - //****** Temperature Dependence Parameters ******// - parameter TNOM = 27; // Temperature at which parameters are extracted - parameter UTE = -1.5; // Mobility temperature exponent - parameter KT1 = -0.11; // Tempertature coefficient for threshold voltage - parameter KT1L = 0.0; // Channel length dependence of the temperature coefficient for threshold voltage - parameter KT2 = 0.022; // Body-bias coefficient of Vth temperature effect - parameter UA1 = 1.0e-9; // Temperature coefficient for UA - parameter UB1 = -1.0e-18; // Temperature coefficient for UB - parameter UC1 = -99.0; // Temperature coefficient for UC - parameter AT = 3.3e4; // Temperature coefficient for saturation velocity - parameter PRT = 0.0; // Temperature coefficient for Rdsw - parameter NJS = 1.0; // Emission coefficients of junction for drain and source jonctions - parameter NJD = 1.0; // = NJS Idem - parameter XTIS = 3.0; // Junction current temperature exponents for source and drain junctions - parameter XTID = 3.0; // = XTTS Idem - parameter TPB = 0.0; // Temperature coefficient of PB - parameter TPBSW = 0.0; // Temperature coefficient of PBSW - parameter TPBSWG = 0.0; // Temperature coefficient of PBSWG - parameter TCJ = 0.0; // Temperature coefficient of CJ - parameter TCJSW = 0.0; // Temperature coefficient of CJSW - parameter TCJSWG = 0.0; // Temperature coefficient of CJSWG - - //****** Stress Effect Model Parameters ******// - parameter SA = 0.0; // Distance between OD edge to poly from one side - parameter SB = 0.0; // Distance between OD edge to poly from other side - parameter SD = 0.0; // Distance between neighbouring fingers - parameter SAREF = 1e-6; // Reference distance between OD and edge to poly of one side - parameter SBREF = 1e-6; // Reference distance between OD and edge to poly of the other side - parameter WLOD = 0.0; // Width parameter for stress effect - parameter KU0 = 0.0; // Mobility degradation/enhancement coefficient for stress effect - parameter KVSAT = 0.0; // Saturation velocity degradation/enhancement parameter for stress effect - parameter TKU0 = 0.0; // Temperature coefficient of KU0 - parameter LKU0 = 0.0; // Length dependence of KU0 - parameter WKU0 = 0.0; // Width dependence of KU0 - parameter PKU0 = 0.0; // - parameter LLODKU0 = 0.0; // Length parameter for U0 stress effect - parameter WLODKU0 = 0.0; // Width parameter for U0 stress effect - parameter KVTH0 = 0.0; // Threshold shift parameter for stress effect - parameter LKVTH0 = 0.0; // Length dependence of KVTH0 - parameter WKVTH0 = 0.0; // Width dependence of KVTH0 - parameter PKVTH0 = 0.0; // Cross-term dependence of KVTH0 - parameter LLODVTH = 0.0; // Length parameter for Vth stress effect - parameter WLODVTH = 0.0; // Width parameter for Vth stress effect - parameter STK2 = 0.0; // K2 shift factor related to VTH0 change - parameter LODK2 = 1.0; // K2 shift modification factor for stress effect - parameter STETA0 = 0.0; // ETA0 shift factor related to VTH0 change - parameter LODETA0 = 1.0; // ETA0 shift modification factor for stress effect - - //****** DW and DL Parameters ******// - parameter WL = 0.0; // Coefficient of length dependence for width offset - parameter WLN = 1.0; // Power of length dependence of width offset - parameter WW = 0.0; // Coefficient of width dependence for width offset - parameter WWN = 1.0; // Power of width dependence of width offset - parameter WWL = 0.0; // Coefficient of length and width cross-term dependence for width - parameter LL = 0.0; // Coefficient of length dependence for length offset - parameter LLN = 1.0; // Power of length dependence of length offset - parameter LW = 0.0; // Coefficient of width dependence for length offset - parameter LWN = 1.0; // Power of width dependence of length offset - parameter LWL = 0.0; // Coefficient of length and width cross-term dependence for length - parameter LLC = 0.0; // = LL Coefficient of length dependence for CV channel length offset - parameter LWC = 0.0; // = LW Coefficient of width dependence for CV channel length offset - parameter LWLC = 0.0; // = LWL Power of length and width cross-term dependence for CV channel length offset - parameter WLC = 0.0; // = WL Coefficient of length dependence for CV channel width offset - parameter WWC = 0.0; // = WW Coefficient of width dependence for CV channel width offset - parameter WWLC = 0.0; // = WWL Power of length and width cross-term dependence for CV channel width offset -//****** Noise parameters ***********// // Added MEB // - parameter NTNOI = 1.0; // Noise factor for short channel devices - used when TNOIMOD = 0 - parameter KF = 0.0; // - parameter AF = 1.0; // - parameter EF = 1.0; // - parameter TEMP = 27; // Circuit temperature - - - integer i; - real type, mode, gmin; - real t0, t1, t2, t3, t4, t5, t6, t7, t8, t9, t10, t11, t12, t13; - real tmp, tmp1, tmp2, tmp3, tmp4; - real mobmod, rdsmod, tempmod, rgatemod, permod, geomod, rgeomod; - real igcmod, igbmod, diomod, capmod, rbodymod; - real toxe, toxp, coxe, coxp, epsrox; - real tnom, vtm0, vtm, eg0, eg, ni; - real l, w, lnew, wnew, nf, xl, xw; - real ll, lw, lwl, lln, lwn, lint, dl, leff; - real wl, ww, wwl, wln, wwn, wint, dw, weff; - real gamma1, gamma2, ndep, nsub; - real phi, phin, sqrtphi, k3, vfbzb, w0, phis, sqrtphis; - real xj, nsd, xdep0, litl, vbi, vfbsd, ngate, xdep; - real cdep0, ntox, toxratio, toxratioedge, toxref, poxedge; - real mstar, voff, voffl, voffcbn, minv, ldeb; - real k1, k2, vbx, vbm, xt, vbsc, vfb, vth0, k1ox, k2ox, toxm; - real vtfbphi1, vtfbphi2, thetarout, dsub, theta0vb0; - real drout, pdibl1, pdibl2, factor1, dvt0w, dvt1w; - real dvt1, dvt0, lpe0, lpeb, kt1, kt1l, tratio; - real vgs, vds, vbs, Vds, Vbs, vses, vdes, vbd, vgd; - real vsbs, vdbd, vgb, vded, vgeg, vgmg, vgegm, vgmb; - real vbsb, vbdb, vbeb, vbes, vges, vgms, vdbs, vbesb, vbedb; - real vbseff, v0, dvt2, dvt2w, lt1, ltw, theta0, thetavth; - real delt_vth, kt2, vth_narroww, eta0, etab, ddibl_sft_dvd; - real dibl_sft, lpe_vb, vth, k3b, dvtp0, dvtp1, vcrit; - real cit, nfactor, cdsc, cdscb, cdscd, n; - real vgs_eff, vgd_eff, Vgs_eff, vgst, expvgst, vgsteff; - real Weff, dwg, dwb, weffcj, powweffwr, wr, ua, ua1, ub, ub1, uc, uc1; - real vsat, vsattemp, at, prt, rdw, rsw, rdwmin, rswmin; - real rdsw, rdswmin, deltemp, u0, u0temp, ute, eu; - real wlc, wwlc, wwc, dwj, rds0, rd0, rs0, rds; - real prwb, prwg, a0, ags, b0, b1, ueff; - real abulk, abulk0, dabulk_dvg, keta, denomi; - real wvcox, wvcoxrds, esat, esatl, a1, a2, Lambda; - real vgst2vtm, vdsat, delta, vdseff, diffvds; - real lambda, vasat, tcen, coxeff, coxeffwovl, beta; - real abovvgst2vtm, fgche1, fgche2, gche, idl; - real fprout, fp, pvag, pvagterm, pclm, cclm, vaclm; - real vadibl, pdiblb, va, pdits, pditsl, pditsd, vadits; - real pscbe1, pscbe2, vascbe, idsa, ids; - real alpha0, alpha1, beta0, isub, cdrain; - real vtl, vs, lc, xn, tfactor, fsevl; - real grgeltd, xgl, rshg, ngcon, xgw, xrcrg1, xrcrg2, gcrg; - real llodku0, wlod, w_tmp, wlodku0, lku0, wku0, pku0, tku0; - real llodvth, wlodvth, ku0, lkvth0, wkvth0, pkvth0, kvth0; - real ku0temp, ldrn, inv_saref, inv_sbref, inv_od_ref, rho_ref; - real sa, sb, saref, sbref, sd, lodk2, lodeta0, kvsat; - real inv_sa, inv_sb, inv_odeff, rho, od_offset, stk2; - real dvth0_lod, dk2_lod, steta0, deta0_lod; - real pseff, pdeff, adeff, aseff, dmcg, dmcgt, dmcgeff; - real dmcieff, dmci, dmdg, dmdgt, dmdgeff; - real ps, pd, as, ad, dumps, dumpd, dumas, dumad, imin; - real nrs, nrd, rsh, gsdiff, gddiff, gstot, gdtot, rs, rd; - real agidl, bgidl, cgidl, egidl, igidl, igisl; - real v3, v4, vfbeff, voxacc, voxdepinv, vxnvt, expvxnvt, vaux; - real dlc, dlcig, aechvb, bechvb, aechvbedge, bechvbedge; - real aigc, bigc, cigc, aigsd, bigsd, cigsd, aigbacc, bigbacc; - real cigbacc, nigbacc, aigbinv, bigbinv, cigbinv, nigbinv; - real nigc, pigcd, eigbinv, igc, modif_pigcd, igcs, igcd; - real igs, igd, igb, igbacc, igbinv; - real llc, lwc, lwlc, pbs, pbsws, pbswgs, pbd, pbswd, pbswgd; - real cgbo, param_cgdo, param_cgso, cgdo, cgso; - real xtis, xtid, jss, jsd, jsws, jswd, jswgs, jswgd; - real jss_temp, jsd_temp, jsws_temp, jswd_temp; - real jsgs_temp, jswgs_temp, jswgd_temp, njs, njd, cgdl, cgsl; - real dwc, tcj, tcjsw, tcjswg, cjs, cjd, cjsws, cjswd; - real cjswgs, cjswgd, cjs_temp, cjd_temp, cjsws_temp, cjswd_temp; - real cjswgs_temp, cjswgd_temp, tpb, tpbsw, tpbswg, phibs, phibd; - real phibsws, phibswd, phibswgs, phibswgd; - real ijthsfwd, ijthsrev, ijthdfwd, ijthdrev, xjbvd, bvd; - real xjbvs, bvs, weffcv, leffcv, cf, acde; - real gbmin, rbdb, grbdb, rbpb, grbpb, rbsb, grbsb, rbpd, grbpd; - real rbps, grbps, nvtms, nvtmd, isbs, isbd, xexpbvs, xexpbvd; - real vjsmfwd, vjdmfwd, ivjsmfwd, ivjdmfwd, sslpfwd, dslpfwd; - real vjsmrev, vjdmrev, ivjsmrev, ivjdmrev, sslprev, dslprev; - real cbs, cbd, evbs, evbd, vbs_jct, vbd_jct; - real csub, clc, cle, abulkcvfactor, xpart, vfbcv; - real coxwl, arg1, arg2, qdrn, qbulk, qgate, qsrc, ccn; - real abulkcv, alphaz, vdsatcv, two_third_coxwl; - real vbseffcv, noff, voffcv, vgstnvt, qac0, qsub0; - real vdseffcv, cox, tox, ccen, link, coxwlcen, moin, deltaphi; - real arg, czbd, czbs, czbdsw, czbssw, czbdswg, czbsswg, sarg; - real mjs, mjd, mjsws, mjswd, mjswgs, mjswgd; - real ckappas, ckappad, qgso, qgdo, dt0_dvg, sxpart, dxpart; - real qgmb, qgmid, qgb, qbd, qbs, qb, qd, qs; - - real fourkt, leffx2, Temp; - - - - - //****** Function to calculate geometrical parameters ******// - //****** and intermediaries for rd an rs calculation ******// - analog function real get_nuintd; - input nf, minsd; - real nf, minsd; - - begin - if ((nf%2) != 0) - get_nuintd = 2.0 * max((nf - 1.0) / 2.0, 0.0); - else - begin - if (minsd == 1) /* minimize # of source */ - get_nuintd = 2.0 * max((nf / 2.0 - 1.0), 0.0); - else - get_nuintd = nf; - end - end - endfunction - - analog function real get_nuendd; - input nf, minsd; - real nf, minsd; - - begin - if ((nf%2) != 0) - get_nuendd = 1.0; - else - begin - if (minsd == 1) /* minimize # of source */ - get_nuendd = 2.0; - else - get_nuendd = 0.0; - end - end - endfunction - - analog function real get_nuints; - input nf, minsd; - real nf, minsd; - - begin - if ((nf%2) != 0) - get_nuints= 2.0 * max((nf - 1.0) / 2.0, 0.0); - else - begin - if (minsd == 1) /* minimize # of source */ - get_nuints = nf; - else - get_nuints = 2.0 * max((nf / 2.0 - 1.0), 0.0); - end - end - endfunction - - analog function real get_nuends; - input nf, minsd; - real nf, minsd; - - begin - if ((nf%2) != 0) - get_nuends = 1.0; - else - begin - if (minsd == 1) /* minimize # of source */ - get_nuends = 0.0; - else - get_nuends = 2.0; - end - end - endfunction - - analog function real get_ps; - input nf, geo, minsd, weffcj, dmcg, dmci, dmdg; - real nf, geo, minsd, weffcj, dmcg, dmci, dmdg; - real psiso, pssha, psmer; - real t0, t1, t2; - real nuints, nuends; - - - begin - - nuints = 0.0; - nuends = 0.0; - - if (geo < 9) - begin - nuints = get_nuints(nf, minsd); - nuends = get_nuends(nf, minsd); - end - - t0 = dmcg + dmci; - t1 = dmcg + dmcg; - t2 = dmdg + dmdg; - - psiso = t0 + t0 + weffcj; - pssha = t1; - psmer = t2; - - case(geo) - 0: get_ps = nuends * psiso + nuints * pssha; - 1: get_ps = nuends * psiso + nuints * pssha; - 2: get_ps = (nuends + nuints) * pssha; - 3: get_ps = (nuends + nuints) * pssha; - 4: get_ps = nuends * psiso + nuints * pssha; - 5: get_ps = (nuends + nuints) * pssha; - 6: get_ps = nuends * psmer + nuints * pssha; - 7: get_ps = nuends * psmer + nuints * pssha; - 8: get_ps = nuends * psmer + nuints * pssha; - 9: get_ps = psiso + (nf - 1.0) * pssha; - 10: get_ps = nf * pssha; - default: $strobe ("Warning: Specified GEO = %e not matched", geo); - endcase - end - endfunction - - analog function real get_pd; - input nf, geo, minsd, weffcj, dmcg, dmci, dmdg; - real nf, geo, minsd, weffcj, dmcg, dmci, dmdg; - real pdiso, pdsha, pdmer; - real t0, t1, t2; - real nuintd, nuendd; - - begin - - nuintd = 0.0; - nuendd = 0.0; - - if (geo < 9) - begin - nuintd = get_nuintd(nf, minsd); - nuendd = get_nuendd(nf, minsd); - end - - t0 = dmcg + dmci; - t1 = dmcg + dmcg; - t2 = dmdg + dmdg; - - pdiso = t0 + t0 + weffcj; - pdsha = t1; - pdmer = t2; - - case(geo) - 0: get_pd = nuendd * pdiso + nuintd * pdsha; - 1: get_pd = (nuendd + nuintd) * pdsha; - 2: get_pd = nuendd * pdiso + nuintd * pdsha; - 3: get_pd = (nuendd + nuintd) * pdsha; - 4: get_pd = nuendd * pdmer + nuintd * pdsha; - 5: get_pd = nuendd * pdmer + nuintd * pdsha; - 6: get_pd = nuendd * pdiso + nuintd * pdsha; - 7: get_pd = (nuendd + nuintd) * pdsha; - 8: get_pd = nuendd * pdmer + nuintd * pdsha; - 9: get_pd = nf * pdsha; - 10: get_pd = pdiso + (nf - 1.0) * pdsha; - default: $strobe("Warning: Specified GEO = %d not matched", geo); - endcase - end - endfunction - - analog function real get_as; - input nf, geo, minsd, weffcj, dmcg, dmci, dmdg; - real nf, geo, minsd, weffcj, dmcg, dmci, dmdg; - real asiso, assha, asmer; - real t0; - real nuints, nuends; - - begin - - nuints = 0.0; - nuends = 0.0; - - if (geo < 9) - begin - nuints = get_nuints(nf, minsd); - nuends = get_nuends(nf, minsd); - end - - t0 = dmcg + dmci; - - asiso = t0 * weffcj; - assha = dmcg * weffcj; - asmer = dmdg * weffcj; - - case(geo) - 0: get_as = nuends * asiso + nuints * assha; - 1: get_as = nuends * asiso + nuints * assha; - 2: get_as = (nuends + nuints) * assha; - 3: get_as = (nuends + nuints) * assha; - 4: get_as = nuends * asiso + nuints * assha; - 5: get_as = (nuends + nuints) * assha; - 6: get_as = nuends * asmer + nuints * assha; - 7: get_as = nuends * asmer + nuints * assha; - 8: get_as = nuends * asmer + nuints * assha; - 9: get_as = asiso + (nf - 1.0) * assha; - 10: get_as = nf * assha; - default: $strobe("Warning: Specified GEO = %d not matched", geo); - endcase - end - endfunction - - analog function real get_ad; - input nf, geo, minsd, weffcj, dmcg, dmci, dmdg; - real nf, geo, minsd, weffcj, dmcg, dmci, dmdg; - real adiso, adsha, admer; - real t0; - real nuintd, nuendd; - - - begin - - nuintd = 0.0; - nuendd = 0.0; - - if (geo < 9) - begin - nuintd = get_nuintd(nf, minsd); - nuendd = get_nuendd(nf, minsd); - end - - t0 = dmcg + dmci; - - adiso = t0 * weffcj; - adsha = dmcg * weffcj; - admer = dmdg * weffcj; - - case(geo) - 0: get_ad = nuendd * adiso + nuintd * adsha; - 1: get_ad = (nuendd + nuintd) * adsha; - 2: get_ad = nuendd * adiso + nuintd * adsha; - 3: get_ad = (nuendd + nuintd) * adsha; - 4: get_ad = nuendd * admer + nuintd * adsha; - 5: get_ad = nuendd * admer + nuintd * adsha; - 6: get_ad = nuendd * adiso + nuintd * adsha; - 7: get_ad = (nuendd + nuintd) * adsha; - 8: get_ad = nuendd * admer + nuintd * adsha; - 9: get_ad = nf * adsha; - 10: get_ad = adiso + (nf - 1.0) * adsha; - default: $strobe("Warning: Specified GEO = %d not matched", geo); - endcase - end - endfunction - - analog function real get_rendi; - input weffcj, rsh, dmcg, dmci, dmdg, nuend, rgeo, type; - real weffcj, rsh, dmcg, dmci, dmdg, nuend, rgeo, type; - - - begin - if (type == 1) - begin - case(rgeo) - 1, 2, 5: - begin - if (nuend == 0.0) - get_rendi = 0.0; - else - get_rendi = rsh * dmcg / (weffcj * nuend); - end - 3, 4, 6: - begin - if ((dmcg + dmci) == 0.0) - $strobe("(dmcg + dmci) can not be equal to zero"); - if (nuend == 0.0) - get_rendi = 0.0; - else - get_rendi = rsh * weffcj / (3.0 * nuend * (dmcg + dmci)); - end - default: - $strobe("warning: specified rgeo = %d not matched", rgeo); - endcase - end - else - begin - case(rgeo) - 1, 3, 7: - begin - if (nuend == 0.0) - get_rendi = 0.0; - else - get_rendi = rsh * dmcg / (weffcj * nuend); - end - 2, 4, 8: - begin - if ((dmcg + dmci) == 0.0) - $strobe("(dmcg + dmci) can not be equal to zero"); - if (nuend == 0.0) - get_rendi = 0.0; - else - get_rendi = rsh * weffcj / (3.0 * nuend * (dmcg + dmci)); - end - default: - $strobe("warning: specified rgeo = %d not matched", rgeo); - endcase - end - end - endfunction - - analog function real get_renda; - input weffcj, rsh, dmcg, dmci, dmdg, nuend, rgeo, type; - real weffcj, rsh, dmcg, dmci, dmdg, nuend, rgeo, type; - - - begin - if (type == 1) - begin - case(rgeo) - 1, 2, 5: - begin - if (nuend == 0.0) - get_renda = 0.0; - else - get_renda = rsh * dmcg / (weffcj * nuend); - end - 3, 4, 6: - begin - if (dmcg == 0.0) - $strobe("dmcg can not be equal to zero"); - if (nuend == 0.0) - get_renda = 0.0; - else - get_renda = rsh * weffcj / (6.0 * nuend * dmcg); - end - default: - $strobe("warning: specified rgeo = %d not matched", rgeo); - endcase - end - else - begin - case(rgeo) - 1, 3, 7: - begin - if (nuend == 0.0) - get_renda = 0.0; - else - get_renda = rsh * dmcg / (weffcj * nuend); - end - 2, 4, 8: - begin - if (dmcg == 0.0) - $strobe("dmcg can not be equal to zero"); - if (nuend == 0.0) - get_renda = 0.0; - else - get_renda = rsh * weffcj / (6.0 * nuend * dmcg); - end - default: - $strobe("warning: specified rgeo = %d not matched", rgeo); - endcase - end - end - endfunction - - analog function real get_rtot; - input nf, geo, rgeo, minsd, weffcj, rsh, dmcg, dmci, dmdg, type; - real nf, geo, rgeo, minsd, weffcj, rsh, dmcg, dmci, dmdg, type; - real rint, rend; - real nuintd, nuendd, nuints, nuends; - real DUMMY; - real rtot; - - begin - - rend = 0.0; - nuintd = 0.0; - nuendd = 0.0; - nuints = 0.0; - nuends = 0.0; - - if (geo < 9) /* since geo = 9 and 10 only happen when nf = even */ - begin - nuintd = get_nuintd(nf, minsd); - nuints = get_nuints(nf, minsd); - nuendd = get_nuendd(nf, minsd); - nuends = get_nuends(nf, minsd); - - /* internal s/d resistance -- assume shared s or d and all wide contacts */ - if (type == 1) - begin - if (nuints == 0.0) - rint = 0.0; - else - rint = rsh * dmcg / ( weffcj * nuints); - end - else - begin - if (nuintd == 0.0) - rint = 0.0; - else - rint = rsh * dmcg / ( weffcj * nuintd); - end - end - - /* end s/d resistance -- geo dependent */ - case(geo) - 0: - begin - if (type == 1) - rend = get_rendi(weffcj, rsh, dmcg, dmci, dmdg, nuends, rgeo, 1); - else - rend = get_rendi(weffcj, rsh, dmcg, dmci, dmdg, nuendd, rgeo, 0); - end - 1: - begin - if (type == 1) - rend = get_rendi(weffcj, rsh, dmcg, dmci, dmdg, nuends, rgeo, 1); - else - rend = get_renda(weffcj, rsh, dmcg, dmci, dmdg, nuendd, rgeo, 0); - end - 2: - begin - if (type == 1) - rend = get_renda(weffcj, rsh, dmcg, dmci, dmdg, nuends, rgeo, 1); - else - rend = get_rendi(weffcj, rsh, dmcg, dmci, dmdg, nuendd, rgeo, 0); - end - 3: - begin - if (type == 1) - rend = get_renda(weffcj, rsh, dmcg, dmci, dmdg, nuends, rgeo, 1); - else - rend = get_renda(weffcj, rsh, dmcg, dmci, dmdg, nuendd, rgeo, 0); - end - 4: - begin - if (type == 1) - rend = get_rendi(weffcj, rsh, dmcg, dmci, dmdg, nuends, rgeo, 1); - else - rend = rsh * dmdg / weffcj; - end - 5: - begin - if (type == 1) - rend = get_renda(weffcj, rsh, dmcg, dmci, dmdg, nuends, rgeo, 1); - else - rend = rsh * dmdg / (weffcj * nuendd); - end - 6: - begin - if (type == 1) - rend = rsh * dmdg / weffcj; - else - rend = get_rendi(weffcj, rsh, dmcg, dmci, dmdg, nuendd, rgeo, 0); - end - 7: - begin - if (type == 1) - rend = rsh * dmdg / (weffcj * nuends); - else - rend = get_renda(weffcj, rsh, dmcg, dmci, dmdg, nuendd, rgeo, 0); - end - 8: - begin - rend = rsh * dmdg / weffcj; - end - 9: /* all wide contacts assumed for geo = 9 and 10 */ - begin - if (type == 1) - begin - rend = 0.5 * rsh * dmcg / weffcj; - if (nf == 2.0) - rint = 0.0; - else - rint = rsh * dmcg / (weffcj * (nf - 2.0)); - end - else - begin - rend = 0.0; - rint = rsh * dmcg / (weffcj * nf); - end - end - 10: - begin - if (type == 1) - begin - rend = 0.0; - rint = rsh * dmcg / (weffcj * nf); - end - else - begin - rend = 0.5 * rsh * dmcg / weffcj;; - if (nf == 2.0) - rint = 0.0; - else - rint = rsh * dmcg / (weffcj * (nf - 2.0)); - end - end - default: - $strobe("Warning: specified geo = %d not matched", geo); - endcase - - if (rint <= 0.0) - get_rtot = rend; - else if (rend <= 0.0) - get_rtot = rint; - else - get_rtot = rint * rend / (rint + rend); - if(get_rtot==0.0) - $strobe("Warning: zero resistance returned from get_rtot"); - end - endfunction - - analog function real get_vjm; - input nvtm, ijth, isb, xexpbv; - real nvtm, ijth, isb, xexpbv; - real tb, tc, evjmovnv; - - begin - tc = xexpbv; - tb = 1.0 + ijth / isb - tc; - evjmovnv = 0.5 * (tb + sqrt(tb * tb + 4.0 * tc)); - get_vjm = nvtm * ln(evjmovnv); - end - endfunction - - - analog - begin - - @(initial_model) // Changed MEB - begin - - a0 = A0; - a1 = A1; - a2 = A2; - acde = ACDE; - ad = AD; - agidl = AGIDL; - ags = AGS; - aigbacc = AIGBACC; - aigbinv = AIGBINV; - aigc = AIGC; - aigsd = AIGSD; - alpha0 = ALPHA0; - alpha1 = ALPHA1; - as = AS; - at = AT; - b0 = B0; - b1 = B1; - beta0 = BETA0; - bgidl = BGIDL; - bigbacc = BIGBACC; - bigbinv = BIGBINV; - bigc = BIGC; - bigsd = BIGSD; - bvd = BVD; - bvs = BVS; - capmod = CAPMOD; - cdsc = CDSC; - cdscb = CDSCB; - cdscd = CDSCD; - cf = CF; - cgbo = CGBO; - cgdl = CGDL; - cgidl = CGIDL; - cgsl = CGSL; - cigbacc = CIGBACC; - cigbinv = CIGBINV; - cigc = CIGC; - cigsd = CIGSD; - cit = CIT; - cjd = CJD; - cjs = CJS; - cjswd = CJSWD; - cjswgd = CJSWGD; - cjswgs = CJSWGS; - cjsws = CJSWS; - ckappad = CKAPPAD; - ckappas = CKAPPAS; - clc = CLC; - cle = CLE; - delta = DELTA; - diomod = DIOMOD; - dlc = DLC; - dlcig = DLCIG; - dmcg = DMCG; - dmcgt = DMCGT; - dmci = DMCI; - dmdg = DMDG; - drout = DROUT; - dsub = DSUB; - dvt0 = DVT0; - dvt0w = DVT0W; - dvt1 = DVT1; - dvt1w = DVT1W; - dvt2 = DVT2; - dvt2w = DVT2W; - dvtp0 = DVTP0; - dvtp1 = DVTP1; - dwb = DWB; - dwc = DWC; - dwg = DWG; - dwj = DWJ; - egidl = EGIDL; - eigbinv = EIGBINV; - epsrox = EPSROX; - eta0 = ETA0; - etab = ETAB; - eu = EU; - fprout = FPROUT; - gamma1 = GAMMA1; - gamma2 = GAMMA2; - gbmin = GBMIN; - geomod = GEOMOD; - gmin = GMIN; - igbmod = IGBMOD; - igcmod = IGCMOD; - ijthdfwd = IJTHDFWD; - ijthdrev = IJTHDREV; - ijthsfwd = IJTHSFWD; - ijthsrev = IJTHSREV; - imin = MIN; - jsd = JSD; - jss = JSS; - jswd = JSWD; - jswgd = JSWGD; - jswgs = JSWGS; - jsws = JSWS; - k1 = K1; - k2 = K2; - k3 = K3; - k3b = K3B; - keta = KETA; - kt1 = KT1; - kt1l = KT1L; - kt2 = KT2; - ku0 = KU0; - kvsat = KVSAT; - kvth0 = KVTH0; - l = L; - lambda = LAMBDA; - lc = LC; - lint = LINT; - lku0 = LKU0; - lkvth0 = LKVTH0; - ll = LL; - lln = LLN; - llodku0 = LLODKU0; - llodvth = LLODVTH; - lodeta0 = LODETA0; - lodk2 = LODK2; - lpe0 = LPE0; - lpeb = LPEB; - lw = LW; - lwl = LWL; - lwn = LWN; - minv = MINV; - mjd = MJD; - mjs = MJS; - mjswd = MJSWD; - mjswgd = MJSWGD; - mjswgs = MJSWGS; - mjsws = MJSWS; - mobmod = MOBMOD; - moin = MOIN; - ndep = NDEP; - nf = NF; - nfactor = NFACTOR; - ngate = NGATE; - ngcon = NGCON; - nigbacc = NIGBACC; - nigbinv = NIGBINV; - nigc = NIGC; - njd = NJD; - njs = NJS; - noff = NOFF; - nrd = NRD; - nrs = NRS; - nsd = NSD; - nsub = NSUB; - ntox = NTOX; - param_cgdo = CGDO; - param_cgso = CGSO; - pbd = PBD; - pbs = PBS; - pbswd = PBSWD; - pbswgd = PBSWGD; - pbswgs = PBSWGS; - pbsws = PBSWS; - pclm = PCLM; - pd = PD; - pdibl1 = PDIBL1; - pdibl2 = PDIBL2; - pdiblb = PDIBLB; - pdits = PDITS; - pditsd = PDITSD; - pditsl = PDITSL; - permod = PERMOD; - phin = PHIN; - pigcd = PIGCD; - pku0 = PKU0; - pkvth0 = PKVTH0; - poxedge = POXEDGE; - prt = PRT; - prwb = PRWB; - prwg = PRWG; - ps = PS; - pscbe1 = PSCBE1; - pscbe2 = PSCBE2; - pvag = PVAG; - rbdb = RBDB; - rbodymod = RBODYMOD; - rbpb = RBPB; - rbpd = RBPD; - rbps = RBPS; - rbsb = RBSB; - rdsmod = RDSMOD; - rdsw = RDSW; - rdswmin = RDSWMIN; - rdw = RDW; - rdwmin = RDWMIN; - rgatemod = RGATEMOD; - rgeomod = RGEOMOD; - rsh = RSH; - rshg = RSHG; - rsw = RSW; - rswmin = RSWMIN; - sa = SA; - saref = SAREF; - sb = SB; - sbref = SBREF; - sd = SD; - steta0 = STETA0; - stk2 = STK2; - tcj = TCJ; - tcjsw = TCJSW; - tcjswg = TCJSWG; - tempmod = TEMPMOD; - tku0 = TKU0; - toxe = TOXE; - toxm = TOXM; - toxp = TOXP; - toxref = TOXREF; - tpb = TPB; - tpbsw = TPBSW; - tpbswg = TPBSWG; - type = -1.0; // MOS - u0 = U0; - ua = UA; - ua1 = UA1; - ub = UB; - ub1 = UB1; - uc = UC; - uc1 = UC1; - ute = UTE; - vbm = VBM; - vbx = VBX; - vfb = VFB; - vfbcv = VFBCV; - voff = VOFF; - voffcv = VOFFCV; - voffl = VOFFL; - vsat = VSAT; - vth0 = VTH0; - vtl = VTL; - w = W; - w0 = W0; - wint = WINT; - wku0 = WKU0; - wkvth0 = WKVTH0; - wl = WL; - wlc = WLC; - wln = WLN; - wlod = WLOD; - wlodku0 = WLODKU0; - wlodvth = WLODVTH; - wr = WR; - ww = WW; - wwc = WWC; - wwl = WWL; - wwlc = WWLC; - wwn = WWN; - xgl = XGL; - xgw = XGW; - xj = XJ; - xjbvd = XJBVD; - xjbvs = XJBVS; - xl = XL; - xn = XN; - xrcrg1 = XRCRG1; - xrcrg2 = XRCRG2; - xt = XT; - xtid = XTID; - xtis = XTIS; - xw = XW; -/////////////////////////////////////////////////////////////////// - xpart = XPART; // Added by MEB - llc = LLC; - lwc = LWC; - lwlc = LWLC; - Temp = (TEMP+273.15); -////////////////////////////////////////////////////////////////// - - if (mobmod == -99.0) - mobmod = 0; - else if ((mobmod != 0) && (mobmod != 1) && (mobmod != 2)) - begin - mobmod = 0; - $strobe("Warning: MOBMOD has been set to its default value: 0."); - end - - if (rdsmod == -99.0) - rdsmod = 0; - else if ((rdsmod != 0) && (rdsmod != 1)) - begin - rdsmod = 0; - $strobe("Warning: RDSMOD has been set to its default value: 0."); - end - - if (tempmod == -99.0) - tempmod = 0; - else if ((tempmod != 0) && (tempmod != 1)) - begin - tempmod = 0; - $strobe("Warning: TEMPMOD has been set to its default value: 0."); - end - - if ((diomod != 0) && (diomod != 1) && (diomod != 2)) - begin - diomod = 1; - $strobe("Warning: DIOMOD has been set to its default value: 1."); - end - - if ((capmod != 0) && (capmod != 1) && (capmod != 2)) - begin - capmod = 2; - $strobe("Warning: CAPMOD has been set to its default value: 2."); - end - - if ((permod != 0) && (permod != 1)) - begin - permod = 1; - $strobe("Warning: PERMOD has been set to its default value: 1."); - end - - if ((igcmod != 0) && (igcmod != 1)) - begin - igcmod = 0; - $strobe("Warning: IGCMOD has been set to its default value: 0."); - end - - if ((igbmod != 0) && (igbmod != 1)) - begin - igbmod = 0; - $strobe("Warning: IGBMOD has been set to its default value: 0."); - end - - if ((rbodymod != 0) && (rbodymod != 1)) - begin - rbodymod = 0; - $strobe("Warning: RBODYMOD has been set to its default value: 0."); - end - - if (toxref <= 0.0) - begin - $strobe("Fatal: TOXREF = %e is not positive.", TOXREF); - $finish(1); - end - - if (toxe != -99.0 && toxp != -99.0 && DTOX != 0.0 && (toxe != (toxp + DTOX))) - $strobe("Warning: TOXE, TOXP and DTOX all given and TOXE != TOXP + DTOX. DTOX ignored."); - else if (toxe != -99.0 && toxp == -99.0) - toxp = toxe - DTOX; - else if (toxe == -99.0 && toxp != -99.0) - toxe = toxp + DTOX; - else if (toxp == -99.0 && toxe == -99.0) - begin - toxe = 3.0e-9; - toxp = toxe; - end -///// cox added MEB - cox = (3.45311e-11/toxe); - if (toxe < 1.0e-10) - $strobe("Warning: TOXE = %e is less than 1A. Recommended TOXE >= 5A", toxe); - if (toxp < 1.0e-10) - $strobe("Warning: TOXP = %e is less than 1A. Recommended TOXP >= 5A", toxp); - - if (toxm == -99.0) - toxm = toxe; - if (toxm <= 0.0) - begin - $strobe("Fatal: TOXM = %e is not positive.", toxm); - $finish(1); - end - - if (toxm < 1.0e-10) - $strobe("Warning: TOXM = %e is less than 1A. Recommended TOXM >= 5A", toxm); - - if (epsrox <= 0.0) - begin - $strobe("Warning: EPSROX is not positive. Default value taken."); - epsrox = 3.9; - end - - if (TNOM < -273.15) - begin - $strobe("Warning: TNOM is not physically possible. Default value taken."); - tnom = 300.15; - end - else - tnom = TNOM + 273.15; - - if (l <= 0.0 ) - begin - $strobe("FATAL : L is not positive."); - $finish(1); - end - - if (w <= 0.0 ) - begin - $strobe("FATAL : W is not positive."); - $finish(1); - end - - if (nf < 1.0) - begin - $strobe("Warning : NF must be at least equal to 1.Default value taken"); - nf = 1.0; - end - - if (phin < -0.4) - begin - $strobe("Fatal: phin = %e is less than -0.4.", PHIN); - $finish(1); - end - else - - if (nsub <= 0.0) - begin - $strobe("Fatal: NSUB = %e is not positive.", NSUB); - $finish(1); - end - else if (NSUB <= 1.0e14) - $strobe("Warning: NSUB = %e may be too small.", NSUB); - else if (NSUB >= 1.0e21) - $strobe("Warning: NSUB = %e may be too large.", NSUB); - - if (xj <= 0.0) - $strobe("Fatal: XJ = %e is not positive.", XJ); - - if (ngate < 0.0) - begin - $strobe("Fatal: NGATE = %e is not positive.", NGATE); - $finish(1); - end - if (ngate > 1.0e25) - begin - $strobe("Fatal: NGATE = %e is too high.", NGATE); - $finish(1); - end - if ((ngate > 0.0) && (ngate <= 1.0e18)) - $strobe("Warning: NGATE = %e is less than 1.E18cm^-3.", NGATE); - - if (poxedge <= 0.0) - begin - $strobe("Fatal: POXEDGE = %e is non-positive.", POXEDGE); - $finish(1); - end - - if (dsub < 0.0) - begin - $strobe("Fatal: DSUB = %e is negative.", DSUB); - $finish(1); - end - - if (drout < 0.0) - begin - $strobe("Fatal: DROUT = %e is negative.", DROUT); - $finish(1); - end - - if (pdibl1 < 0.0) - $strobe("Warning: PDIBL1 = %e is negative.", PDIBL1); - - if (pdibl2 < 0.0) - $strobe("Warning: PDIBL2 = %e is negative.", PDIBL2); - - if (dvt1w < 0.0) - begin - $strobe("Fatal: DVT1W = %e is negative.", DVT1W); - $finish(1); - end - - if (dvt1 < 0.0) - begin - $strobe("Fatal: DVT1 = %e is negative.", DVT1); - $finish(1); - end - - if (dvt0 < 0.0) - $strobe("Warning: DVT0 = %e is negative.", DVT0); - - if (lpe0 < -leff) - begin - $strobe("Fatal: LPE0 = %e is less than -leff.", LPE0); - $finish(1); - end - - if (w0 == -weff) - begin - $strobe("Fatal: (W0 + Weff) = 0 causing divided-by-zero."); - $finish(1); - end - if (abs(1.0e-6 / (w0 + weff)) > 10.0) - $strobe("Warning: (W0 + Weff) may be too small."); - - if (eta0 < 0.0) - $strobe("Warning: ETA0 = %e is negative.", ETA0); - - if (lpeb < -leff) - begin - $strobe("Fatal: LPEB = %e is less than -leff.", LPEB); - $finish(1); - end - - if (nfactor < 0.0) - $strobe("Warning: NFACTOR = %e is negative.", NFACTOR); - - if (cdsc < 0.0) - $strobe("Warning: CDSC = %e is negative.", CDSC); - - if (cdscd < 0.0) - $strobe("Warning: CDSCD = %e is negative.", CDSCD); - - if (u0 == -99.0) - u0 = (type == 1) ? 0.067 : 0.025; - - if (ua == -99.0) - ua = (mobmod == 2) ? 1.0e-15 : 1.0e-9; - - if (uc == -99.0) - uc = (mobmod == 1) ? -0.0465 : -0.0465e-9; - - if (uc1 == -99.0) - uc1 = (mobmod == 1) ? -0.056 : -0.056e-9; - - if (eu == -99.0) - eu = (type == 1) ? 1.67 : 1.0;; - - if (prwg < 0.0) - begin - $strobe("Warning: PRWG = %e is negative. Set to zero.", PRWG); - prwg = 0.0; - end - - if (a2 < 0.01) - begin - $strobe("Warning: A2 = %e is too small. Set to 0.01.", a2); - a2 = 0.01; - end - else if (a2 > 1.0) - begin - $strobe("Warning: A2 = %e is larger than 1. A2 is set to 1 and A1 is set to 0.", a2); - a2 = 1.0; - a1 = 0.0; - end - - if (delta < 0.0) - begin - $strobe("Fatal: DELTA = %e is less than zero.", delta); - $finish(1); - end - - if ((lambda != -99.0) && (lambda > 0.0)) - begin - if (lambda > 1.0e-9) - $strobe("Warning: LAMBDA = %e may be too large.", LAMBDA); - end - - if (fprout < 0.0) - begin - $strobe("Fatal: FPROUT = %e is negative.", FPROUT); - $finish(1); - end - - if (pclm <= 0.0) - begin - $strobe("Fatal: PCLM = %e is not positive.", PCLM); - $finish(1); - end - - if (pdits < 0.0) - begin - $strobe("Fatal: PDITS = %e is negative.", pdits); - $finish(1); - end - - if (pditsl < 0.0) - begin - $strobe("Fatal: PDITSL = %e is negative.", pditsl); - $finish(1); - end - - if (pscbe2 <= 0.0) - $strobe("Warning: PSCBE2 = %e is not positive.", PSCBE2); - - if ((vtl != -99.0) && (vtl > 0.0)) - begin - if (vtl < 6.0e4) - $strobe("Warning: Thermal velocity VTL = %e may be too small.", vtl); - end - - if (xn < 3.0) - begin - $strobe("Warning: back scattering coeff XN = %e is too small. Reset to 3.0", xn); - xn = 3.0; - end - - if (rgatemod == 1) - begin - if (rshg <= 0.0) - $strobe("Warning: RSHG should be positive for RGATEMOD = 1."); - end - else if (rgatemod == 2) - begin - if (rshg <= 0.0) - $strobe("Warning: RSHG <= 0.0 for rgateMod = 2."); - else if (xrcrg1 <= 0.0) - $strobe("Warning: XRCRG1 <= 0.0 for rgateMod = 2."); - end - if (rgatemod == 3) - begin - if (rshg <= 0.0) - $strobe("Warning: RSHG should be positive for RGATEMOD = 3."); - else if (xrcrg1 <= 0.0) - $strobe("Warning: XRCRG1 should be positive for RGATEMOD = 3."); - end - - if (ngcon < 1.0) - begin - $strobe("Fatal: The parameter NGCON cannot be smaller than one."); - $finish(1); - end - - if ((l + xl) <= xgl) - begin - $strobe("Fatal: The parameter XGL must be smaller than Ldrawn+XL."); - $finish(1); - end - - if((sa > 0.0) && (sb > 0.0) && ((nf == 1.0) || ((nf > 1.0) && (sd > 0.0))) ) - begin - if (saref <= 0.0) - begin - $strobe("Fatal: SAREF = %e is not positive.",saref); - $finish(1); - end - if (sbref <= 0.0) - begin - $strobe("Fatal: SBREF = %e is not positive.",sbref); - $finish(1); - end - if (wlod < 0.0) - begin - $strobe("Warning: WLOD = %e is less than 0.",wlod); - wlod = 0.0; - end - if (kvsat < -1.0 ) - begin - $strobe("Warning: KVSAT = %e is is too small; Reset to -1.0.",kvsat); - kvsat = -1.0; - end - if (kvsat > 1.0) - begin - $strobe("Warning: KVSAT = %e is too big; Reset to 1.0.",kvsat); - kvsat = 1.0; - end - if (lodk2 <= 0.0) - $strobe("Warning: LODK2 = %e is not positive.",lodk2); - if (lodeta0 <= 0.0) - $strobe("Warning: LODETA0 = %e ih not positive.",lodeta0); - end - - if (aigc == -99.0) - aigc = (type == 1) ? 0.43 : 0.31; - if (bigc == -99.0) - bigc = (type == 1) ? 0.054 : 0.024; - if (cigc == -99.0) - cigc = (type == 1) ? 0.075 : 0.03; - if (aigsd == -99.0) - aigsd = (type == 1) ? 0.43 : 0.31; - if (bigsd == -99.0) - bigsd = (type == 1) ? 0.054 : 0.024; - if (cigsd == -99.0) - cigsd = (type == 1) ? 0.075 : 0.03; - - if (nigbinv <= 0.0) - begin - $strobe("Fatal: NIGBINV = %e is non-positive.", nigbinv); - $finish(1); - end - - if (nigbacc <= 0.0) - begin - $strobe("Fatal: NIGBACC = %e is non-positive.", nigbacc); - $finish(1); - end - - if (nigc <= 0.0) - begin - $strobe("Fatal: NIGC = %e is non-positive.", nigc); - $finish(1); - end - - if (pigcd <= 0.0) - begin - $strobe("Fatal: PIGCD = %e is non-positive.", pigcd); - $finish(1); - end - - if (pbs < 0.1) - begin - pbs = 0.1; - $strobe("Given PBS is less than 0.1. PBS is set to 0.1."); - end - - if (pbsws < 0.1) - begin - pbsws = 0.1; - $strobe("Given PBSWS is less than 0.1. PBSWS is set to 0.1."); - end - - if (pbswgs < 0.1) - begin - pbswgs = 0.1; - $strobe("Given PBSWGS is less than 0.1. PBSWGS is set to 0.1."); - end - - if (pbd < 0.1) - begin - pbd = 0.1; - $strobe("Given PBD is less than 0.1. PBD is set to 0.1."); - end - - if (pbswd < 0.1) - begin - pbswd = 0.1; - $strobe("Given PBSWD is less than 0.1. PBSWD is set to 0.1."); - end - - if (pbswgd < 0.1) - begin - pbswgd = 0.1; - $strobe("Given PBSWGD is less than 0.1. PBSWGD is set to 0.1."); - end - - if (ijthdfwd <= 0.0) - begin - ijthdfwd = 0.1; - //$strobe("IJTHDFWD reset to %e.", ijthdfwd); - end - - if (ijthsfwd <= 0.0) - begin - ijthsfwd = 0.1; - // $strobe("IJTHSFWD reset to %e.", ijthsfwd); - end - - if (ijthdrev <= 0.0) - begin - ijthdrev = 0.1; - $strobe("IJTHDREV reset to %e.", ijthdrev); - end - - if (ijthsrev <= 0.0) - begin - ijthsrev = 0.1; - $strobe("IJTHSREV reset to %e.", ijthsrev); - end - - if ((xjbvd <= 0.0) && (diomod == 2)) - begin - xjbvd = 1.0; - $strobe("XJBVD reset to %e.", xjbvd); - end - else if ((xjbvd < 0.0) && (diomod == 0)) - begin - xjbvd = 1.0; - $strobe("XJBVD reset to %e.", xjbvd); - end - - if (bvd <= 0.0) - begin - bvd = 10.0; - $strobe("BVD reset to %e.\n", bvd); - end - - if ((xjbvs <= 0.0) && (diomod == 2)) - begin - xjbvs = 1.0; - $strobe("XJBVS reset to %e.\n", xjbvs); - end - else if ((xjbvs < 0.0) && (diomod == 0)) - begin - xjbvs = 1.0; - $strobe("XJBVS reset to %e.\n", xjbvs); - end - - if (bvs <= 0.0) - begin - bvs = 10.0; - $strobe("BVS reset to %g.\n", bvs); - end - - if (gbmin < 1.0e-20) - $strobe("Warning: GBMIN = %e is too small.", gbmin); - - if (clc < 0.0) - begin - $strobe("Fatal: CLC = %e is negative.", CLC); - $finish(1); - end - - if (noff < 0.1) - $strobe("Warning: NOFF = %e is too small.", noff); - - if (voffcv < -0.5) - $strobe("Warning: VOFFCV = %e is too small.", voffcv); - - if (moin < 5.0) - $strobe("Warning: MOIN = %e is too small.", moin); - if (moin > 25.0) - $strobe("Warning: MOIN = %e is too large.", moin); - - if (ckappas < 0.02) - begin - $strobe("Warning: CKAPPAS = %e is too small.", ckappas); - ckappas = 0.02; - end - - if (ckappad < 0.02) - begin - $strobe("Warning: CKAPPAD = %e is too small.", ckappad); - ckappad = 0.02; - end - - //***** Oxide capacitances (line 110-111, file b4temp.c) *****// - coxe = epsrox * `EPS0 / toxe; - coxp = epsrox * `EPS0 / toxp; - - //***** Overlap capacitances (line 113-129, file b4temp.c) *****// - if (param_cgdo == -99.0) - begin - if (dlc > 0.0) - param_cgdo = dlc * coxe - cgdl ; - else - param_cgdo = 0.6 * xj * coxe; - end - - if (param_cgso == -99.0) - begin - if (dlc > 0.0) - param_cgso = dlc * coxe - cgsl ; - else - param_cgso = 0.6 * xj * coxe; - end - - if (cgbo == -99.0) - cgbo = 2.0 * dwc * coxe; - - tratio = Temp / tnom; // changed MEB - factor1 = sqrt(`EPSSI / (epsrox * `EPS0) * toxe); - - //***** Intrinsic carrier concentration (line 139-141, file b4temp.c) *****// - vtm0 = `KboQ * tnom; - eg0 = 1.16 - 7.02e-4 * tnom * tnom / (tnom + 1108.0); - ni = 1.45e10 * (tnom / 300.15) * sqrt(tnom / 300.15) * exp(21.5565981 - eg0 / (2.0 * vtm0)); - // vtm = `KboQ * $temperature; Changed MEB - vtm = `KboQ * Temp; - //***** Energy gap (line 145, file b4temp.c) *****// - // eg = 1.16 - 7.02e-4 * $temperature * $temperature / ($temperature + 1108.0); - eg = 1.16 - 7.02e-4 * Temp * Temp / (Temp + 1108.0); - - //***** Temperture dependance of Junction diode IV (line 149-191, file b4temp.c) *****// - if (Temp != tnom) - begin - t0 = eg0 / vtm0 - eg / vtm; - t1 = ln($temperature / tnom); - t2 = t0 + xtis * t1; - t3 = exp(t2 / njs); - jss_temp = jss * t3; - jsws_temp = jsws * t3; - jswgs_temp = jswgs * t3; - t2 = t0 + xtid * t1; - t3 = exp(t2 / njd); - jsd_temp = jsd * t3; - jswd_temp = jswd * t3; - jswgd_temp = jswgd * t3; - end - else - begin - jss_temp = jss; - jsws_temp = jsws; - jswgs_temp = jswgs; - jsd_temp = jsd; - jswd_temp = jswd; - jswgd_temp = jswgd; - end - - if (jss_temp < 0.0) - jss_temp = 0.0; - if (jsws_temp < 0.0) - jsws_temp = 0.0; - if (jswgs_temp < 0.0) - jswgs_temp = 0.0; - if (jsd_temp < 0.0) - jsd_temp = 0.0; - if (jswd_temp < 0.0) - jswd_temp = 0.0; - if (jswgd_temp < 0.0) - jswgd_temp = 0.0; - - //***** Temperature dependence of D/B and S/B diode capacitance (line 193-278, file b4temp.c) *****// - // deltemp = $temperature - tnom; Changed MEB - deltemp = Temp - tnom; - t0 = tcj * deltemp; - - if (t0 >= -1.0) - begin - cjs_temp = cjs *(1.0 + t0); - cjd_temp = cjd *(1.0 + t0); - end - else - begin - if (cjs > 0.0) - begin - cjs_temp = 0.0; - $strobe("Temperature effect has caused CJS to be negative. CJS is clamped to zero."); - end - if (cjd > 0.0) - begin - cjd_temp = 0.0; - $strobe("Temperature effect has caused CJD to be negative. CJD is clamped to zero.\n"); - end - end - - t0 = tcjsw * deltemp; - - if (t0 >= -1.0) - begin - cjsws_temp = cjsws *(1.0 + t0); - cjswd_temp = cjswd *(1.0 + t0); - end - else - begin - if (cjsws > 0.0) - begin - cjsws_temp = 0.0; - $strobe("Temperature effect has caused CJSWS to be negative. CJSWS is clamped to zero."); - end - if (cjswd > 0.0) - begin - cjswd_temp = 0.0; - $strobe("Temperature effect has caused CJSWD to be negative. CJSWD is clamped to zero."); - end - end - - t0 = tcjswg * deltemp; - - if (t0 >= -1.0) - begin - cjswgs_temp = cjswgs *(1.0 + t0); - cjswgd_temp = cjswgd *(1.0 + t0); - end - else - begin - if (cjswgs > 0.0) - begin - cjswgs_temp = 0.0; - $strobe("Temperature effect has caused CJSWGS to be negative. CJSWGS is clamped to zero."); - end - if (cjswgd > 0.0) - begin - cjswgd_temp = 0.0; - $strobe("Temperature effect has caused CJSWGD to be negative. CJSWGD is clamped to zero."); - end - end - - phibs = pbs - tpb * deltemp; - - if (phibs < 0.01) - begin - phibs = 0.01; - $strobe("Temperature effect has caused PBS to be less than 0.01. PBS is clamped to 0.01."); - end - - phibd = pbd - tpb * deltemp; - - if (phibd < 0.01) - begin - phibd = 0.01; - $strobe("Temperature effect has caused PBD to be less than 0.01. PBD is clamped to 0.01."); - end - - phibsws = pbsws - tpbsw * deltemp; - - if (phibsws <= 0.01) - begin - phibsws = 0.01; - $strobe("Temperature effect has caused PBSWS to be less than 0.01. PBSWS is clamped to 0.01."); - end - - phibswd = pbswd - tpbsw * deltemp; - - if (phibswd <= 0.01) - begin - phibswd = 0.01; - $strobe("Temperature effect has caused PBSWD to be less than 0.01. PBSWD is clamped to 0.01."); - end - - phibswgs = pbswgs - tpbswg * deltemp; - - if (phibswgs <= 0.01) - begin - phibswgs = 0.01; - $strobe("Temperature effect has caused PBSWGS to be less than 0.01. PBSWGS is clamped to 0.01."); - end - - phibswgd = pbswgd - tpbswg * deltemp; - - if (phibswgd <= 0.01) - begin - phibswgd = 0.01; - $strobe("Temperature effect has caused PBSWGD to be less than 0.01. PBSWGD is clamped to 0.01."); - end - - //***** Effective length and width (line 362-396, file b4temp.c) *****// - lnew = l + xl ; - wnew = w / nf + xw; - t0 = pow(lnew, lln); - t1 = pow(wnew, lwn); - tmp1 = ll / t0 + lw / t1 + lwl / (t0 * t1); - dl = lint + tmp1; - tmp2 = llc / t0 + lwc / t1 + lwlc / (t0 * t1); - dlc = dlc + tmp2; - dlcig = dlcig + tmp2; - t2 = pow(lnew, wln); - t3 = pow(wnew, wwn); - tmp1 = wl / t2 + ww / t3 + wwl / (t2 * t3); - dw = wint + tmp1; - tmp2 = wlc / t2 + wwc / t3 + wwlc / (t2 * t3); - dwj = dwj + tmp2; - leff = lnew - 2.0 * dl; - weff = wnew - 2.0 * dw; - leffcv = lnew - 2.0 * dlc; - - if (leffcv <= 0.0) - begin - $strobe("Fatal: Effective channel length for C-V <= 0"); - $finish(1); - end - - weffcv = wnew - 2.0 * dwc; - - if (weffcv <= 0.0) - begin - $strobe("Fatal: Effective channel width for C-V <= 0"); - $finish(1); - end - - if (leff <= 1.0e-9) - $strobe("Warning: leff = %e <= 1.0e-9. Recommended leff >= 1e-8.", leff); - - if (weff <= 1.0e-9) - $strobe("Warning: weff = %e <= 1.0e-9. Recommended weff >= 1e-7.", weff); - - if (leffcv <= 1.0e-9) - $strobe("warning: leff for CV = %e <= 1.0e-9. recommended leffcv >=1e-8 ", leffcv); - - if (weffcv <= 1.0e-9) - $strobe("warning: weff for CV = %e <= 1.0e-9. recommended weffcv >= 1e-7 ", weffcv); - - //***** weffcj (line 429-437, file b4temp.c) *****// - weffcj = wnew - 2.0 * dwj; - - if (weffcj <= 0.0) - begin - $strobe("Fatal: Effective channel width for S/D junctions <= 0."); - $finish(1); - end - - //***** Temperature model (line 955-1026, file b4temp.c) *****// - - abulkcvfactor = 1.0 + pow((clc / leffcv), cle); - t0 = (tratio - 1.0); - powweffwr = pow(weffcj * 1.0e6, wr) * nf; - t1 = 0.0; - t2 = 0.0; - t3 = 0.0; - t4 = 0.0; - - if (tempmod == 0) - begin - ua = ua + ua1 * t0; - ub = ub + ub1 * t0; - uc = uc + uc1 * t0; - vsattemp = vsat - at * t0; - t10 = prt * t0; - - if(rdsmod == 1) - begin - /* External Rd(V) */ - t1 = rdw + t10; - t2 = rdwmin + t10; - - /* External Rs(V) */ - t3 = rsw + t10; - t4 = rswmin + t10; - end - - /* Internal Rds(V) in IV */ - rds0 = (rdsw + t10) * nf / powweffwr; - rdswmin = (rdswmin + t10) * nf / powweffwr; - end - else /* TEMPMOD = 1 */ - begin - ua = ua * (1.0 + ua1 * deltemp); - ub = ub * (1.0 + ub1 * deltemp); - uc = uc * (1.0 + uc1 * deltemp); - vsattemp = vsat * (1.0 - at * deltemp); - t10 = 1.0 + prt * deltemp; - - if(rdsmod == 1) - begin - /* External Rd(V) */ - t1 = rdw * t10; - t2 = rdwmin * t10; - - /* External Rs(V) */ - t3 = rsw * t10; - t4 = rswmin * t10; - end - - /* Internal Rds(V) in IV */ - rds0 = rdsw * t10 * nf / powweffwr; - rdswmin = rdswmin * t10 * nf / powweffwr; - end - - if (t1 < 0.0) - begin - t1 = 0.0; - $strobe("Warning: rdw at current temperature is negative; set to 0."); - end - - if (t2 < 0.0) - begin - t2 = 0.0; - $strobe("Warning: rdwmin at current temperature is negative; set to 0."); - end - - rd0 = t1 / powweffwr; - rdwmin = t2 / powweffwr; - - if (t3 < 0.0) - begin - t3 = 0.0; - $strobe("Warning: rsw at current temperature is negative; set to 0."); - end - - if (t4 < 0.0) - begin - t4 = 0.0; - $strobe("Warning: rswmin at current temperature is negative; set to 0."); - end - - rs0 = t3 / powweffwr; - rswmin = t4 / powweffwr; - - if (u0 > 1.0) - u0 = u0 / 1.0e4; - - u0temp = u0 * pow(tratio, ute); - - if (u0temp <= 0.0) - begin - $strobe("Fatal: U0 at current temperature = %e is not positive.", u0temp); - $finish(1); - end - - if (eu < 0.0) - begin - eu = 0.0; - $strobe("Warning: EU has been negative; reset to 0.0."); - end - - if (vsattemp <= 0.0) - begin - $strobe("Fatal: VSAT at current temperature = %e is not positive.", vsattemp); - $finish(1); - end - - if (vsattemp < 1.0e3) - $strobe("Warning: VSAT at current temperature = %e may be too small.", vsattemp); - - if (rds0 < 0.0) - begin - $strobe("Warning: Rds at current temperature = %e is negative. Set to zero.", rds0); - rds0 = 0.0; - end - - if (rdsw < 0.0) - begin - $strobe("Warning: rdsw = %e is negative. Set to zero.", rdsw); - rdsw = 0.0; - rds0 = 0.0; - end - - if (rdswmin < 0.0) - begin - $strobe("Warning: rdswmin at current temperature = %e is negative. Set to zero.", rdswmin); - rdswmin = 0.0; - end - - if (b1 == -weff) - begin - $strobe("Fatal: (B1 + weff) = 0 causing divided-by-zero."); - $finish(1); - end - - if (abs(1.0e-6 / (b1 + weff)) > 10.0) - $strobe("Warning: (B1 + weff) may be too small."); - - //***** Source End Velocity Limit (line 1024-1034, file b4temp.c) *****// - if ((vtl != -99.0) && (vtl > 0.0)) - begin - if (lc < 0.0) - lc = 0.0; - - t0 = leff / (xn * leff + lc); - tfactor = (1.0 - t0) / (1.0 + t0 ); - end - - //***** Overlap capacitances (line 1034-1040, file b4temp.c) *****// - if (cf == -99.0) - cf = 2.0 * epsrox * `EPS0 / `PI * ln(1.0 + 0.4e-6 / toxe); - - param_cgdo = (param_cgdo + cf) * weffcv; - param_cgso = (param_cgso + cf) * weffcv; - cgbo = cgbo * leffcv * nf; - - //***** Test on ndep and gamma1 (line 1043-1045, file b4temp.c) *****// - if (ndep == -99.0 && gamma1 != -99.0) - begin - t0 = gamma1 * coxe; - ndep = 3.01248e22 * t0 * t0; - end - else if (ndep != -99.0 && gamma1 == -99.0) - gamma1 = 5.753e-12 * sqrt(ndep) / coxe; - else if (ndep == -99.0 && gamma1 == -99.0) - begin - ndep = 1.0e17; - gamma1 = 5.753e-12 * sqrt(ndep) / coxe; - end - - if (ndep <= 0.0) - begin - $strobe("Fatal: NDEP = %e is not positive.", ndep); - $finish(1); - end - - if (ndep <= 1.0e12) - $strobe("Warning: NDEP = %e may be too small.", ndep); - else if (ndep >= 1.0e21) - $strobe("Warning: NDEP = %e may be too large.", ndep); - - if (gamma2 == -99.0) - gamma2 = 5.753e-12 * sqrt(nsub) / coxe; - - //***** Potential surface (line 1048-1049, file b4temp.c) *****// - phi = vtm0 * ln(ndep / ni) + phin + 0.4; - sqrtphi = sqrt(phi); - - //***** Calculation of some intermediaries (line 1054-1091, file b4temp.c) *****// - xdep0 = sqrt(2.0 * `EPSSI / (`Charge_q * ndep * 1.0e6)) * sqrtphi; - litl = sqrt(3.0 * xj * toxe); - vbi = vtm0 * ln(nsd * ndep / (ni * ni)); - - if (ngate > 0.0) - vfbsd = vtm0 * ln(ngate / nsd); - else - vfbsd = 0.0; - - cdep0 = sqrt(`Charge_q * `EPSSI * ndep * 1.0e6 / 2.0 / phi); - toxratio = exp(ntox * ln(toxref / toxe)) / toxe / toxe; - toxratioedge = exp(ntox * ln(toxref / (toxe * poxedge))) / toxe / toxe / poxedge / poxedge; - mstar = 0.5 + atan(minv) / `PI; - voffcbn = voff + voffl / leff; - ldeb = sqrt(`EPSSI * vtm0 / (`Charge_q * ndep * 1.0e6)) / 3.0; - acde = acde * pow((ndep / 2.0e16), -0.25); - - if (capmod ==2) - begin - if (acde < 0.1) - $strobe("Warning: ACDE = %e is too small.", acde); - if (acde > 1.6) - $strobe("Warning: ACDE = %e is too large.", acde); - end - - //***** Calculation of K1 and K2 (line 1101-1149, file b4temp.c) *****// - if (k1 != -99.0 || k2 != -99.0) - begin - if (k1 == -99.0) - begin - $strobe("Warning: K1 should be specified with K2."); - k1 = 0.53; - end - if (k2 == -99.0) - begin - $strobe("Warning: K2 should be specified with K1."); - k2 = -0.0186; - end - end - else - begin - if (vbx == -99.0) - vbx = phi - 7.7348e-4 * ndep * xt * xt; - if (vbx > 0.0) - vbx = -vbx; - if (vbm > 0.0) - vbm = -vbm; - - t0 = gamma1 - gamma2; - t1 = sqrt(phi - vbx) - sqrtphi; - t2 = sqrt(phi * (phi - vbm)) - phi; - k2 = t0 * t1 / (2.0 * t2 + vbm); - k1 = gamma2 - 2.0 * k2 * sqrt(phi - vbm); - end - - //***** Calculation of vbsc (line 1151-1161, file b4temp.c) *****// - if (k2 < 0.0) - begin - t0 = 0.5 * k1 / k2; - vbsc = 0.9 * (phi - t0 * t0); - - if (vbsc > -3.0) - vbsc = -3.0; - else if (vbsc < -30.0) - vbsc = -30.0; - end - else - vbsc = -30.0; - - if (vbsc > vbm) - vbsc = vbm; - - //***** Flat-band voltage (line 1165-1179, file b4temp.c) *****// - if (vfb == -99.0) - begin - if (vth0 != -99.0) - vfb = type * vth0 - phi - k1 * sqrtphi; - else - vfb = -1.0; - end - - //***** Flat-band voltage (line 1165-1179, file b4temp.c) *****// - if (vth0 == -99.0) - vth0 = type * (vfb + phi + k1 * sqrtphi); - - //***** Calculation of intermediaries (line 1181-1185, file b4temp.c) *****// - k1ox = k1 * toxe / toxm; - k2ox = k2 * toxe / toxm; - - //***** Calculation of vfbzb (line 1186-1265, file b4temp.c) *****// - t3 = type * vth0 - vfb - phi; - t4 = t3 + t3; - t5 = 2.5 * t3; - vtfbphi1 = (type == 1) ? t4 : t5; - - if (vtfbphi1 < 0.0) - vtfbphi1 = 0.0; - - vtfbphi2 = 4.0 * t3; - - if (vtfbphi2 < 0.0) - vtfbphi2 = 0.0; - - tmp = sqrt(`EPSSI / (epsrox * `EPS0) * toxe * xdep0); - t0 = dsub * leff / tmp; - - if (t0 < `EXP_THRESHOLD) - begin - t1 = exp(t0); - t2 = t1 - 1.0; - t3 = t2 * t2; - t4 = t3 + 2.0 * t1 * `MIN_EXP; - theta0vb0 = t1 / t4; - end - else - theta0vb0 = 1.0 / (`MAX_EXP - 2.0); - - t0 = drout * leff / tmp; - - if (t0 < `EXP_THRESHOLD) - begin - t1 = exp(t0); - t2 = t1 - 1.0; - t3 = t2 * t2; - t4 = t3 + 2.0 * t1 * `MIN_EXP; - t5 = t1 / t4; - end - else - t5 = 1.0 / (`MAX_EXP - 2.0); /* 3.0 * `MIN_EXP omitted */ - - thetarout = pdibl1 * t5 + pdibl2; - tmp = sqrt(xdep0); - tmp1 = vbi - phi; - tmp2 = factor1 * tmp; - t0 = dvt1w * weff * leff / tmp2; - - if (t0 < `EXP_THRESHOLD) - begin - t1 = exp(t0); - t2 = t1 - 1.0; - t3 = t2 * t2; - t4 = t3 + 2.0 * t1 * `MIN_EXP; - t8 = t1 / t4; - end - else - t8 = 1.0 / (`MAX_EXP - 2.0); - - t0 = dvt0w * t8; - t8 = t0 * tmp1; - t0 = dvt1 * leff / tmp2; - - if (t0 < `EXP_THRESHOLD) - begin - t1 = exp(t0); - t2 = t1 - 1.0; - t3 = t2 * t2; - t4 = t3 + 2.0 * t1 * `MIN_EXP; - t9 = t1 / t4; - end - else - t9 = 1.0 / (`MAX_EXP - 2.0); - - t9 = dvt0 * t9 * tmp1; - t4 = toxe * phi / (weff + w0); - t0 = sqrt(1.0 + lpe0 / leff); - t5 = k1ox * (t0 - 1.0) * sqrtphi + (kt1 + kt1l / leff) * (tratio - 1.0); - tmp3 = type * vth0 - t8 - t9 + k3 * t4 + t5; - vfbzb = tmp3 - phi - k1 * sqrtphi; - - //***** Stress Effect (line 1267-1366, file b4temp.c) *****// - ldrn = l; - t0 = pow(lnew, llodku0); - w_tmp = wnew + wlod; - t1 = pow(w_tmp, wlodku0); - tmp1 = lku0 / t0 + wku0 / t1 + pku0 / (t0 * t1); - ku0 = 1.0 + tmp1; - t0 = pow(lnew, llodvth); - t1 = pow(w_tmp, wlodvth); - tmp1 = lkvth0 / t0 + wkvth0 / t1 + pkvth0 / (t0 * t1); - kvth0 = 1.0 + tmp1; - kvth0 = sqrt(kvth0*kvth0 + `DELTA); - t0 = (tratio - 1.0); - ku0temp = ku0 * (1.0 + tku0 *t0) + `DELTA; - inv_saref = 1.0/(saref + 0.5 * ldrn); - inv_sbref = 1.0/(sbref + 0.5 * ldrn); - inv_od_ref = inv_saref + inv_sbref; - rho_ref = KU0 / ku0temp * inv_od_ref; - - if ((sa > 0.0) && (sb > 0.0) && ((nf == 1.0) || ((nf > 1.0) && (sd > 0.0)))) - begin - inv_sa = 0; - inv_sb = 0; - /////// for loop changed to while loop MEB - // - i=0; - while (i < nf) - // for(i = 0; i < nf; i = i+1) - begin - t0 = 1.0 / nf / (sa + 0.5*ldrn + i * (sd +ldrn)); - t1 = 1.0 / nf / (sb + 0.5*ldrn + i * (sd +ldrn)); - inv_sa = inv_sa + t0; - inv_sb = inv_sb + t1; - i = i +1; - end - - inv_odeff = inv_sa + inv_sb; - rho = KU0 / ku0temp * inv_odeff; - t0 = (1.0 + rho)/(1.0 + rho_ref); - u0temp = u0temp * t0; - t1 = (1.0 + kvsat * rho)/(1.0 + kvsat * rho_ref); - vsattemp = vsattemp * t1; - od_offset = inv_odeff - inv_od_ref; - dvth0_lod = KVTH0 / kvth0 * od_offset; - dk2_lod = stk2 / pow(kvth0, lodk2) * od_offset; - deta0_lod = steta0 / pow(kvth0, lodeta0) * od_offset; - vth0 = vth0 + dvth0_lod; - - if (VFB == -99.0 && VTH0 == -99.0) - vfb = -1.0; - else - vfb = vfb + type * dvth0_lod; - - vfbzb = vfbzb + type * dvth0_lod; - t3 = type * vth0 - vfb - phi; - t4 = t3 + t3; - t5 = 2.5 * t3; - vtfbphi1 = (type == 1) ? t4 : t5; - - if (vtfbphi1 < 0.0) - vtfbphi1 = 0.0; - - vtfbphi2 = 4.0 * t3; - - if (vtfbphi2 < 0.0) - vtfbphi2 = 0.0; - - k2 = k2 + dk2_lod; - - if (k2 < 0.0) - begin - t0 = 0.5 * k1 / k2; - vbsc = 0.9 * (phi - t0 * t0); - - if (vbsc > -3.0) - vbsc = -3.0; - else if (vbsc < -30.0) - vbsc = -30.0; - end - else - vbsc = -30.0; - - if (vbsc > vbm) - vbsc = vbm; - - k2ox = k2 * toxe / toxm; - eta0 = eta0 + deta0_lod; - end - - //*********** HF model parameters (line 1371-1392, file b4temp.c) *****************// - if (rbodymod == 1.0) - begin - if (rbdb < 1.0e-3) - grbdb = 1.0e3; - else - grbdb = gbmin + 1.0 / rbdb; - - if (rbpb < 1.0e-3) - grbpb = 1.0e3; - else - grbpb = gbmin + 1.0 / rbpb; - - if (rbps < 1.0e-3) - grbps = 1.0e3; - else - grbps = gbmin + 1.0 / rbps; - - if (rbsb < 1.0e-3) - grbsb = 1.0e3; - else - grbsb = gbmin + 1.0 / rbsb; - - if (rbpd < 1.0e-3) - grbpd = 1.0e3; - else - grbpd = gbmin + 1.0 / rbpd; - end - - - //*********** Process geomertry dependent parasitics (line 1396-1452, file b4temp.c) *****************// - grgeltd = rshg * (xgw + weffcj / 3.0 / ngcon) / (ngcon * nf * (lnew - xgl)); - - if (grgeltd > 0.0) - grgeltd = 1.0 / grgeltd; - else - begin - grgeltd = 1.0e3; - - if (rgatemod != 0) - $strobe("Warning: The gate conductance reset to 1.0e3 ohms."); - end - - dmcgeff = dmcg - dmcgt; - dmcieff = dmci; - dmdgeff = dmdg - dmcgt; - - if (ps > 0.0) - begin - if (permod == 0) - pseff = ps; - else - pseff = ps - weffcj * nf; - end - else - pseff = get_ps(nf, geomod, imin, weffcj, dmcgeff, dmcieff, dmdgeff); - - if (pd > 0.0) - begin - if (permod == 0) - pdeff = pd; - else - pdeff = pd - weffcj * nf; - end - else - pdeff = get_pd(nf, geomod, imin, weffcj, dmcgeff, dmcieff, dmdgeff); - - if (as > 0.0) - aseff = as; - else - aseff = get_as(nf, geomod, imin, weffcj, dmcgeff, dmcieff, dmdgeff); - - if (ad > 0.0) - adeff = ad; - else - adeff = get_ad(nf, geomod, imin, weffcj, dmcgeff, dmcieff, dmdgeff); - - //*********** Processing S/D resistance and conductance below (line 1453-1516, file b4temp.c) *****************// - if (nrs != -99.0) - gsdiff = rsh * nrs; - else if (rgeomod > 0) - gsdiff = get_rtot(nf, geomod, rgeomod, imin, weffcj, rsh, dmcgeff, dmcieff, dmdgeff, 1); - else - gsdiff = 0.0; - - if (gsdiff > 0.0) - gsdiff = 1.0 / gsdiff; - else - begin - gsdiff = 1.0e3; /* mho */ - $strobe ("Warning: source conductance reset to 1.0e3 mho."); - end - - if (nrd != -99.0) - gddiff = rsh * nrd; - else if (rgeomod > 0) - gddiff = get_rtot(nf, geomod, rgeomod, imin, weffcj, rsh, dmcgeff, dmcieff, dmdgeff, 0); - else - gddiff = 0.0; - - if (gddiff > 0.0) - gddiff = 1.0 / gddiff; - else - begin - gddiff = 1.0e3; /* mho */ - $strobe ("Warning: drain conductance reset to 1.0e3 mho."); - end - - aechvb = (type == 1) ? 4.97232e-7 : 3.42537e-7; - bechvb = (type == 1) ? 7.45669e11 : 1.16645e12; - aechvbedge = aechvb * weff * dlcig * toxratioedge; - bechvbedge = -bechvb * toxe * poxedge; - aechvb = aechvb * weff * leff * toxratio; - bechvb = bechvb * -toxe; - - //*********** Diode model intermediaries calculation (line 1519-1635, file b4temp.c) *****************// - nvtms = vtm * njs; - - if ((aseff <= 0.0) && (pseff <= 0.0)) - isbs = 1.0e-14; - else - isbs = aseff * jss_temp + pseff * jsws_temp + weffcj * nf * jswgs_temp; - - if (isbs > 0.0) - begin - case(diomod) - 0: - begin - if ((bvs / nvtms) > `EXP_THRESHOLD) - xexpbvs = xjbvs * `MIN_EXP; - else - xexpbvs = xjbvs * exp(-bvs / nvtms); - end - 1: - begin - vjsmfwd = get_vjm(nvtms, ijthsfwd, isbs, 0.0); - ivjsmfwd = isbs * exp(vjsmfwd / nvtms); - end - 2: - begin - if ((bvs / nvtms) > `EXP_THRESHOLD) - begin - xexpbvs = xjbvs * `MIN_EXP; - tmp = `MIN_EXP; - end - else - begin - xexpbvs = exp(-bvs / nvtms); - tmp = xexpbvs; - xexpbvs = xexpbvs * xjbvs; - end - - vjsmfwd = get_vjm(nvtms, ijthsfwd, isbs, xexpbvs); - t0 = exp(vjsmfwd / nvtms); - ivjsmfwd = isbs * (t0 - xexpbvs / t0 + xexpbvs - 1.0); - sslpfwd = isbs * (t0 + xexpbvs / t0) / nvtms; - - t2 = ijthsrev / isbs; - - if (t2 < 1.0) - begin - t2 = 10.0; - $strobe("Warning: ijthsrev too small and set to 10 times isbsat.\n"); - end - - vjsmrev = -bvs - nvtms * ln((t2 - 1.0) / xjbvs); - t1 = xjbvs * exp(-(bvs + vjsmrev) / nvtms); - ivjsmrev = isbs * (1.0 + t1); - sslprev = -isbs * t1 / nvtms; - end - default: $strobe("Specified diomod = %d not matched", diomod); - endcase - end - - nvtmd = vtm * njd; - - if ((adeff <= 0.0) && (pdeff <= 0.0)) - isbd = 1.0e-14; - else - isbd = adeff * jsd_temp + pdeff * jswd_temp + weffcj * nf * jswgd_temp; - - if (isbd > 0.0) - begin - case(diomod) - 0: - begin - if ((bvd / nvtmd) > `EXP_THRESHOLD) - xexpbvd = xjbvd * `MIN_EXP; - else - xexpbvd = xjbvd * exp(-bvd / nvtmd); - end - 1: - begin - vjdmfwd = get_vjm(nvtmd, ijthdfwd, isbd, 0.0); - ivjdmfwd = isbd * exp(vjdmfwd / nvtmd); - end - 2: - begin - if ((bvd / nvtmd) > `EXP_THRESHOLD) - begin - xexpbvd = xjbvd * `MIN_EXP; - tmp = `MIN_EXP; - end - else - begin - xexpbvd = exp(-bvd / nvtmd); - tmp = xexpbvd; - xexpbvd = xexpbvd * xjbvd; - end - - vjsmfwd = get_vjm(nvtmd, ijthdfwd, isbd, xexpbvd); - t0 = exp(vjdmfwd / nvtmd); - ivjdmfwd = isbd * (t0 - xexpbvd / t0 + xexpbvd - 1.0); - dslpfwd = isbd * (t0 + xexpbvd / t0) / nvtmd; - - t2 = ijthdrev / isbd; - - if (t2 < 1.0) - begin - t2 = 10.0; - $strobe("Warning: ijthdrev too small and set to 10 times idbsat.\n"); - end - - vjdmrev = -bvd - nvtmd * ln((t2 - 1.0) / xjbvd); - t1 = xjbvd * exp(-(bvd + vjdmrev) / nvtmd); - ivjdmrev = isbd * (1.0 + t1); - dslprev = -isbd * t1 / nvtmd; - end - default: $strobe("Specified diomod = %d not matched", diomod); - endcase - end - end - //*********************************// - //****** End of initial_step ******// - //*********************************// - - //****** Calculation of all equations to define all currents ******// - //****** Definition of the tensions ******// - vds = type * V(drainp, sourcep); - vgs = type * V(gatep, sourcep); - vbs = type * V(bulkp, sourcep); - vges = type * V(gate, sourcep); - vgms = type * V(gatem, sourcep); - vsbs = type * V(sourceb, sourcep); - vdbs = type * V(drainb, sourcep); - vses = type * V(source, sourcep); - vdes = type * V(drain, sourcep); - vbes = type * V(bulk, sourcep); - vgd = vgs - vds; - vbd = vbs - vds; - vgb = vgs - vbs; - vded = vdes - vds; - vgeg = vges - vgs; - vgmg = vgms - vgs; - vgmb = vgms - vbs; - vgegm = vgeg - vgmg; - vbeb = vbes - vbs; - vdbd = vdbs - vds; - vbesb = vbes - vsbs; - vbedb = vbes - vdbs; - vbsb = vbs - vsbs; - vbdb = vbs - vdbs; - - //***** Source/drain junction diode DC model (line 634-829, file b4ld.c) *****// - vbs_jct = (rbodymod == 0) ? vbs : vsbs; - vbd_jct = (rbodymod == 0) ? vbd : vdbd; - nvtms = vtm * njs; - - if ((aseff <= 0.0) && (pseff <= 0.0)) - isbs = 1.0e-14; - else - isbs = aseff * jss_temp + pseff * jsws_temp + weffcj * nf * jswgs_temp; - - if (isbs <= 0.0) - cbs = gmin * vbs_jct; - else - begin - case(diomod) - 0: - begin - evbs = exp(vbs_jct / nvtms); - t1 = xjbvs * exp(-(bvs + vbs_jct) / nvtms); - cbs = isbs * (evbs + xexpbvs - t1 - 1.0) + gmin * vbs_jct; - end - 1: - begin - t2 = vbs_jct / nvtms; - - if (t2 < -`EXP_THRESHOLD) - cbs = isbs * (`MIN_EXP - 1.0) + gmin * vbs_jct; - else if (vbs_jct <= vjsmfwd) - begin - evbs = exp(t2); - cbs = isbs * (evbs - 1.0) + gmin * vbs_jct; - end - else - begin - t0 = ivjsmfwd / nvtms; - cbs = ivjsmfwd - isbs + t0 * (vbs_jct - vjsmfwd) + gmin * vbs_jct; - end - end - 2: - begin - if (vbs_jct < vjsmrev) - begin - t0 = vbs_jct / nvtms; - - if (t0 < -`EXP_THRESHOLD) - evbs = `MIN_EXP; - else - evbs = exp(t0); - - t1 = evbs - 1.0; - t2 = ivjsmrev + sslprev * (vbs_jct - vjsmrev); - cbs = t1 * t2 + gmin * vbs_jct; - end - else if (vbs_jct <= vjsmfwd) - begin - t0 = vbs_jct / nvtms; - - if (t0 < -`EXP_THRESHOLD) - evbs = `MIN_EXP; - else - evbs = exp(t0); - - t3 = (bvs + vbs_jct) / nvtms; - - if (t1 > `EXP_THRESHOLD) - t2 = `MIN_EXP; - else - t2 = exp(-t1); - - cbs = isbs * (evbs + xexpbvs - 1.0 - xjbvs * t2) + gmin * vbs_jct; - end - else - cbs = ivjsmfwd + sslpfwd * (vbs_jct - vjsmfwd) + gmin * vbs_jct; - end - endcase - end - - nvtmd = vtm * njd; - - if ((adeff <= 0.0) && (pdeff <= 0.0)) - isbd = 1.0e-14; - else - isbd = adeff * jsd_temp + pdeff * jswd_temp + weffcj * nf * jswgd_temp; - - if (isbd <= 0.0) - cbd = gmin * vbd_jct; - else - begin - case(diomod) - 0: - begin - evbd = exp(vbd_jct / nvtmd); - t1 = xjbvd * exp(-(bvd + vbd_jct) / nvtmd); - cbd = isbd * (evbd + xexpbvd - t1 - 1.0) + gmin * vbd_jct; - end - 1: - begin - t2 = vbd_jct / nvtmd; - - if (t2 < -`EXP_THRESHOLD) - begin - cbd = isbd * (`MIN_EXP - 1.0) + gmin * vbd_jct; - end - else if (vbd_jct <= vjdmfwd) - begin - evbd = exp(t2); - cbd = isbd * (evbd - 1.0) + gmin * vbd_jct; - end - else - begin - t0 = ivjdmfwd / nvtmd; - cbd = ivjdmfwd - isbd + t0 * (vbd_jct - vjdmfwd) + gmin * vbd_jct; - end - end - 2: - begin - if (vbd_jct < vjdmrev) - begin - t0 = vbd_jct / nvtmd; - - if (t0 < -`EXP_THRESHOLD) - evbd = `MIN_EXP; - else - evbd = exp(t0); - - t1 = evbd - 1.0; - t2 = ivjdmrev + dslprev * (vbd_jct - vjdmrev); - cbd = t1 * t2 + gmin * vbd_jct; - end - else if (vbd_jct <= vjdmfwd) - begin - t0 = vbd_jct / nvtmd; - - if (t0 < -`EXP_THRESHOLD) - evbd = `MIN_EXP; - else - evbd = exp(t0); - - t1 = (bvd + vbd_jct) / nvtmd; - - if (t1 > `EXP_THRESHOLD) - t2 = `MIN_EXP; - else - t2 = exp(-t1); - - cbd = isbd * (evbd + xexpbvd - 1.0 - xjbvd * t2) + gmin * vbd_jct; - end - else - cbd = ivjdmfwd + dslpfwd * (vbd_jct - vjdmfwd) + gmin * vbd_jct; - end - endcase - end - - //***** Mode choice (line 831-844, file b4ld.c) *****// - if (vds >= 0.0) - begin - mode = 1; - Vds = vds; - Vbs = vbs; - end - else - begin - mode = -1; - Vds = -vds; - Vbs = vbd; - end - - //***** Effective Vbs (line 846-863, file b4ld.c) *****// - t0 = Vbs - vbsc - 0.001; - t1 = sqrt(t0 * t0 - 0.004 * vbsc); - - if (t0 >= 0.0) - vbseff = vbsc + 0.5 * (t0 + t1); - else - begin - t2 = -0.002 / (t1 - t0); - vbseff = vbsc * (1.0 + t2); - end - - // Correction to forward body bias - t9 = 0.95 * phi; - t0 = t9 - vbseff - 0.001; - t1 = sqrt(t0 * t0 + 0.004 * t9); - vbseff = t9 - 0.5 * (t0 + t1); - - //***** Calculation of phis (line 865-867, file b4ld.c) *****// - phis = phi - vbseff; - sqrtphis = sqrt(phis); - - //***** Threshold Voltage (line 878-969, file b4ld.c) *****// - xdep = xdep0 * sqrtphis / sqrt(phi); - t3 = sqrt(xdep); - v0 = vbi - phi; - t0 = dvt2 * vbseff; - - if (t0 >= - 0.5) - begin - t1 = 1.0 + t0; - t2 = dvt2; - end - else - begin - t4 = 1.0 / (3.0 + 8.0 * t0); - t1 = (1.0 + 3.0 * t0) * t4; - t2 = dvt2 * t4 * t4; - end - - lt1 = factor1 * t3 * t1; - t0 = dvt2w * vbseff; - - if (t0 >= - 0.5) - begin - t1 = 1.0 + t0; - t2 = dvt2w; - end - else - begin - t4 = 1.0 / (3.0 + 8.0 * t0); - t1 = (1.0 + 3.0 * t0) * t4; - t2 = dvt2w * t4 * t4; - end - - ltw = factor1 * t3 * t1; - t0 = dvt1 * leff / lt1; - - if (t0 < `EXP_THRESHOLD) - begin - t1 = exp(t0); - t2 = t1 - 1.0; - t3 = t2 * t2; - t4 = t3 + 2.0 * t1 * `MIN_EXP; - theta0 = t1 / t4; - end - else - theta0 = 1.0 / (`MAX_EXP - 2.0); /* 3.0 * `MIN_EXP omitted */ - - thetavth = dvt0 * theta0; - delt_vth = thetavth * v0; - t0 = dvt1w * weff * leff / ltw; - - if (t0 < `EXP_THRESHOLD) - begin - t1 = exp(t0); - t2 = t1 - 1.0; - t3 = t2 * t2; - t4 = t3 + 2.0 * t1 * `MIN_EXP; - t5 = t1 / t4; - end - else - t5 = 1.0 / (`MAX_EXP - 2.0); /* 3.0 * `MIN_EXP omitted */ - - t0 = dvt0w * t5; - t2 = t0 * v0; - tratio = Temp / tnom - 1.0; // changed MEB - t0 = sqrt(1.0 + lpe0 / leff); - t1 = k1ox * (t0 - 1.0) * sqrtphi + (kt1 + kt1l / leff + kt2 * vbseff) * tratio; - vth_narroww = toxe * phi / (weff + w0); - t3 = eta0 + etab * vbseff; - - if (t3 < 1.0e-4) - begin - t9 = 1.0 / (3.0 - 2.0e4 * t3); - t3 = (2.0e-4 - t3) * t9; - t4 = t9 * t9; - end - else - t4 = 1.0; - - ddibl_sft_dvd = t3 * theta0vb0; - dibl_sft = ddibl_sft_dvd * Vds; - lpe_vb = sqrt(1.0 + lpeb / leff); - vth = type * vth0 + (k1ox * sqrtphis - k1 * sqrt(phi)) * lpe_vb - k2ox - * vbseff - delt_vth - t2 + (k3 + k3b * vbseff) * vth_narroww + t1 - dibl_sft; - - //***** Swing factor (line 978-998, file b4ld.c) *****// - tmp1 = `EPSSI / xdep; - tmp2 = nfactor * tmp1; - tmp3 = cdsc + cdscb * vbseff + cdscd * Vds; - tmp4 = (tmp2 + tmp3 * theta0 + cit) / coxe; - - if (tmp4 >= -0.5) - n = 1.0 + tmp4; - else - begin - t0 = 1.0 / (3.0 + 8.0 * tmp4); - n = (1.0 + 3.0 * tmp4) * t0; - end - - //***** Vth correction for Pocket Implant (line 1002-1024, file b4ld.c) *****// - if (dvtp0 > 0.0) - begin - t0 = -dvtp1 * Vds; - - if (t0 < -`EXP_THRESHOLD) - t2 = `MIN_EXP; - else - t2 = exp(t0); - - t3 = leff + dvtp0 * (1.0 + t2); - t4 = vtm * ln(leff / t3); - vth = vth - n * t4; - end - - //***** Poly Gate Si Depletion Effect (line 1028 & 4584-4612, file b4ld.c) *****// - t0 = vfb + phi; - - if ((ngate > 1.0e18) && (ngate < 1.0e25) && (vgs > t0)) - begin - t1 = 1.0e6 * `Charge * `EPSSI * ngate / (coxe * coxe); - t8 = vgs - t0; - t4 = sqrt(1.0 + 2.0 * t8 / t1); - t2 = 2.0 * t8 / (t4 + 1.0); - t3 = 0.5 * t2 * t2 / t1; - t7 = 1.12 - t3 - 0.05; - t6 = sqrt(t7 * t7 + 0.224); - t5 = 1.12 - 0.5 * (t7 + t6); - vgs_eff = vgs - t5; - end - else - vgs_eff = vgs; - - if ((ngate > 1.0e18) && (ngate < 1.0e25) && (vgd > t0)) - begin - t1 = 1.0e6 * `Charge * `EPSSI * ngate / (coxe * coxe); - t8 = vgd - t0; - t4 = sqrt(1.0 + 2.0 * t8 / t1); - t2 = 2.0 * t8 / (t4 + 1.0); - t3 = 0.5 * t2 * t2 / t1; - t7 = 1.12 - t3 - 0.05; - t6 = sqrt(t7 * t7 + 0.224); - t5 = 1.12 - 0.5 * (t7 + t6); - vgd_eff = vgd - t5; - end - else - vgd_eff = vgd; - - if(mode > 0) - Vgs_eff = vgs_eff; - else - Vgs_eff = vgd_eff; - - vgst = Vgs_eff - vth; - - //***** Calculation of vgsteff (line 1051-1109, file b4ld.c) *****// - t0 = n * vtm; - t1 = mstar * vgst; - t2 = t1 / t0; - - if (t2 > `EXP_THRESHOLD) - t10 = t1; - else if (t2 < -`EXP_THRESHOLD) - begin - t10 = vtm * ln(1.0 + `MIN_EXP); - t10 = t10 * n; - end - else - begin - expvgst = exp(t2); - t3 = vtm * ln(1.0 + expvgst); - t10 = n * t3; - end - - t1 = voffcbn - (1.0 - mstar) * vgst; - t2 = t1 / t0; - - if (t2 < -`EXP_THRESHOLD) - begin - t3 = coxe * `MIN_EXP / cdep0; - t9 = mstar + t3 * n; - end - else if (t2 > `EXP_THRESHOLD) - begin - t3 = coxe * `MAX_EXP / cdep0; - t9 = mstar + t3 * n; - end - else - begin - expvgst = exp(t2); - t3 = coxe / cdep0; - t4 = t3 * expvgst; - t5 = t1 * t4 / t0; - t9 = mstar + n * t4; - end - - vgsteff = t10 / t9; - - //***** Effective Channel Geometry (line 1111-1123, file b4ld.c) *****// - t9 = sqrtphis - sqrt(phi); - Weff = weff - 2.0 * (dwg * vgsteff + dwb * t9); - - if (Weff < 2.0e-8) /* to avoid the discontinuity problem due to Weff */ - begin - t0 = 1.0 / (6.0e-8 - 2.0 * Weff); - Weff = 2.0e-8 * (4.0e-8 - Weff) * t0; - end - - //***** Source/Drain Resistance (line 1126-1149, file b4ld.c) *****// - if (rdsmod == 1) - rds = 0.0; - else - begin - t0 = 1.0 + prwg * vgsteff; - t1 = prwb * t9; - t2 = 1.0 / t0 + t1; - t3 = t2 + sqrt(t2 * t2 + 0.01); - t4 = rds0 * 0.5; - rds = rdswmin + t3 * t4; - end - - //***** Bulk Charge Effect (line 1151-1205, file b4ld.c) *****// - t9 = 0.5 * k1ox * lpe_vb / sqrtphis; - t1 = t9 + k2ox - k3b * vth_narroww; - t9 = sqrt(xj * xdep); - tmp1 = leff + 2.0 * t9; - t5 = leff / tmp1; - tmp2 = a0 * t5; - tmp3 = weff + b1; - tmp4 = b0 / tmp3; - t2 = tmp2 + tmp4; - t6 = t5 * t5; - t7 = t5 * t6; - abulk0 = 1.0 + t1 * t2; - t8 = ags * a0 * t7; - dabulk_dvg = -t1 * t8; - abulk = abulk0 + dabulk_dvg * vgsteff; - - if (abulk0 < 0.1) /* added to avoid the problems caused by abulk0 */ - begin - t9 = 1.0 / (3.0 - 20.0 * abulk0); - abulk0 = (0.2 - abulk0) * t9; - end - - if (abulk < 0.1) - begin - t9 = 1.0 / (3.0 - 20.0 * abulk); - abulk = (0.2 - abulk) * t9; - end - - t2 = keta * vbseff; - - if (t2 >= -0.9) - t0 = 1.0 / (1.0 + t2); - else - begin - t1 = 1.0 / (0.8 + t2); - t0 = (17.0 + 20.0 * t2) * t1; - end - - abulk = abulk * t0; - abulk0 = abulk0 * t0; - - //***** Effective Mobility (line 1207-1255, file b4ld.c) *****// - if (mobmod == 0) - begin - t0 = vgsteff + vth + vth; - t2 = ua + uc * vbseff; - t3 = t0 / toxe; - t5 = t3 * (t2 + ub * t3); - end - else if (mobmod == 1) - begin - t0 = vgsteff + vth + vth; - t2 = 1.0 + uc * vbseff; - t3 = t0 / toxe; - t4 = t3 * (ua + ub * t3); - t5 = t4 * t2; - end - else - begin - t0 = (vgsteff + vtfbphi1) / toxe; - t1 = exp(eu * ln(t0)); - t2 = ua + uc * vbseff; - t5 = t1 * t2; - end - - if (t5 >= -0.8) - denomi = 1.0 + t5; - else - begin - t9 = 1.0 / (7.0 + 10.0 * t5); - denomi = (0.6 + t5) * t9; - end - - ueff = u0temp / denomi; - - //***** Saturation Voltage (line 1257-1357, file b4ld.c) *****// - wvcox = Weff * vsattemp * coxe; - wvcoxrds = wvcox * rds; - esat = 2.0 * vsattemp / ueff; - esatl = esat * leff; - t0 = -esatl /ueff; - - if (a1 == 0.0) - Lambda = a2; - else if (a1 > 0.0) - begin - t0 = 1.0 - a2; - t1 = t0 - a1 * vgsteff - 0.0001; - t2 = sqrt(t1 * t1 + 0.0004 * t0); - Lambda = a2 + t0 - 0.5 * (t1 + t2); - end - else - begin - t1 = a2 + a1 * vgsteff - 0.0001; - t2 = sqrt(t1 * t1 + 0.0004 * a2); - Lambda = 0.5 * (t1 + t2); - end - - vgst2vtm = vgsteff + 2.0 * vtm; - - if ((rds == 0.0) && (Lambda == 1.0)) - begin - t0 = 1.0 / (abulk * esatl + vgst2vtm); - t1 = t0 * t0; - t2 = vgst2vtm * t0; - t3 = esatl * vgst2vtm; - vdsat = t3 * t0; - end - else - begin - t9 = abulk * wvcoxrds; - t8 = abulk * t9; - t7 = vgst2vtm * t9; - t6 = vgst2vtm * wvcoxrds; - t0 = 2.0 * abulk * (t9 - 1.0 + 1.0 / Lambda); - t1 = vgst2vtm * (2.0 / Lambda - 1.0) + abulk * esatl + 3.0 * t7; - t2 = vgst2vtm * (esatl + 2.0 * t6); - t3 = sqrt(t1 * t1 - 2.0 * t0 * t2); - vdsat = (t1 - t3) / t0; - end - - //***** Effective Vds (line 1359-1398, file b4ld.c) *****// - t1 = vdsat - Vds - delta; - t2 = sqrt(t1 * t1 + 4.0 * delta * vdsat); - t0 = t1 / t2; - t9 = 2.0 * delta; - - if (t1 >= 0.0) - vdseff = vdsat - 0.5 * (t1 + t2); - else - begin - t4 = t9 / (t2 - t1); - t5 = 1.0 - t4; - vdseff = vdsat * t5; - end - - if (Vds == 0.0) - vdseff = Vds; - - if (vdseff > Vds) - vdseff = Vds; - - diffvds = Vds - vdseff; - - //***** Velocity Overshoot (line 1400-1439, file b4ld.c) *****// - if((lambda != -99.0) && (lambda > 0.0) ) - begin - t1 = leff * ueff; - t2 = lambda / t1; - t5 = 1.0 / (esat * litl); - t6 = 1.0 + diffvds * t5; - t7 = 2.0 / (t6 * t6 + 1.0); - t8 = 1.0 - t7; - t10 = 1.0 + t2 * t8; - esatl = esatl * t10; - end - - //***** Early Voltage at vdsat (line 1441-1464 , file b4ld.c) *****// - tmp4 = 1.0 - 0.5 * abulk * vdsat / vgst2vtm; - t9 = wvcoxrds * vgsteff; - t0 = esatl + vdsat + 2.0 * t9 * tmp4; - t9 = wvcoxrds * abulk; - t1 = 2.0 / Lambda - 1.0 + t9; - vasat = t0 / t1; - - //***** Drain Current for Triode Region (line 1466-1523 , file b4ld.c) *****// - tmp1 = vtfbphi2; - tmp2 = 2.0e8 * toxp; - dt0_dvg = 1.0 / tmp2; - t0 = (vgsteff + tmp1) * dt0_dvg; - tmp3 = exp(0.7 * ln(t0)); - t1 = 1.0 + tmp3; - tcen = 1.9e-9 / t1; - coxeff = `EPSSI * coxp / (`EPSSI + coxp * tcen); - coxeffwovl = coxeff * Weff / leff; - beta = ueff * coxeffwovl; - abovvgst2vtm = abulk / vgst2vtm; - t0 = 1.0 - 0.5 * vdseff * abovvgst2vtm; - fgche1 = vgsteff * t0; - t9 = vdseff / esatl; - fgche2 = 1.0 + t9; - gche = beta * fgche1 / fgche2; - t0 = 1.0 + gche * rds; - idl = gche / t0; - - //***** Degradation Factor due to Pocket Implant (line 1525-1535 , file b4ld.c) *****// - if (fprout <= 0.0) - fp = 1.0; - else - begin - t9 = fprout * sqrt(leff) / vgst2vtm; - fp = 1.0 / (1.0 + t9); - end - - //***** Early Voltage with Channel Length Modulatiom (line 1537-1585, file b4ld.c) *****// - t8 = pvag / esatl; - t9 = t8 * vgsteff; - - if (t9 > -0.9) - pvagterm = 1.0 + t9; - else - begin - t4 = 1.0 / (17.0 + 20.0 * t9); - pvagterm = (0.8 + t9) * t4; - end - - if ((pclm > 0.0) && (diffvds > 1.0e-10)) - begin - t0 = 1.0 + rds * idl; - t2 = vdsat / esat; - t1 = leff + t2; - cclm = fp * pvagterm * t0 * t1 / (pclm * litl); - vaclm = cclm * diffvds; - end - else - begin - vaclm = `MAX_EXP; - cclm = `MAX_EXP; - end - - //***** Early Voltage with Drain-INduced Barrier Lowering (line 1587-1635, file b4ld.c) *****// - if (thetarout > 0.0) - begin - t8 = abulk * vdsat; - t0 = vgst2vtm * t8; - t1 = vgst2vtm + t8; - t2 = thetarout; - vadibl = (vgst2vtm - t0 / t1) / t2; - t7 = pdiblb * vbseff; - - if (t7 >= -0.9) - begin - t3 = 1.0 / (1.0 + t7); - vadibl = vadibl * t3; - end - else - begin - t4 = 1.0 / (0.8 + t7); - t3 = (17.0 + 20.0 * t7) * t4; - vadibl = vadibl * t3; - end - - vadibl = vadibl * pvagterm; - end - else - vadibl = `MAX_EXP; - - //***** Early Voltage with Drain-INduced Threshold Shift (line 1643-1664 , file b4ld.c) *****// - if ((pditsd * Vds) > `EXP_THRESHOLD) - t1 = `MAX_EXP; - else - t1 = exp(pditsd * Vds); - - if (pdits > 0.0) - vadits = (1.0 + (1.0 + pditsl * leff) * t1) / pdits * fp; - else - vadits = `MAX_EXP; - - //***** Early Voltage with Substrate Current Induced Body Effect (line 1666-1685 , file b4.c) *****// - if (pscbe2 > 0.0) - begin - if (diffvds > (pscbe1 * litl / `EXP_THRESHOLD)) - begin - t0 = pscbe1 * litl / diffvds; - vascbe = leff * exp(t0) / pscbe2; - end - else - vascbe = `MAX_EXP * leff/pscbe2; - end - else - vascbe = `MAX_EXP; - - //***** Drain Current (line 1687-1719 , file b4ld.c) *****// - t9 = diffvds / vadibl; - t0 = 1.0 + t9; - idsa = idl * t0; - t9 = diffvds / vadits; - t0 = 1.0 + t9; - idsa = idsa * t0; - t0 = ln((vasat + vaclm) / vasat); - t1 = t0 / cclm; - t9 = 1.0 + t1; - idsa = idsa * t9; - - //***** Substrate current (line 1722-1760, file b4ld.c) *****// - tmp = alpha0 + alpha1 * leff; - - if ((tmp <= 0.0) || (beta0 <= 0.0)) - isub = 0.0; - else - begin - t2 = tmp / leff; - - if (diffvds > beta0 / `EXP_THRESHOLD) - begin - t0 = -beta0 / diffvds; - t1 = t2 * diffvds * exp(t0); - end - else - begin - t3 = t2 * `MIN_EXP; - t1 = t3 * diffvds; - end - - t4 = idsa * vdseff; - isub = t1 * t4; - end - - csub = isub; - - //***** Current Drain (line 1761-1785, file b4ld.c) *****// - t9 = diffvds / vascbe; - t0 = 1.0 + t9; - ids = idsa * t0; - cdrain = ids * vdseff; - - //***** Source End Velocity Limit (line 1787-1817, file b4ld.c) *****// - if ((vtl != -99.0) && (vtl > 0.0)) - begin - t12 = 1.0 / leff / coxeffwovl; - t11 = t12 / vgsteff; - t10 = -t11 / vgsteff; - vs = cdrain * t11; - t0 = 2 * `MM; - t1 = vs / (vtl * tfactor); - - if (t1 <= 0) - t2 = 1.0; - else - t2 = 1.0 + exp(t0 * ln(t1)); - - fsevl = 1.0 / exp(ln(t2)/ t0); - cdrain = cdrain * fsevl; - end - - //***** Rg calculation (line 1824-1858, file b4ld.c) *****// - if (rgatemod > 1) - begin - t9 = xrcrg2 * vtm; - t0 = t9 * beta; - gcrg = xrcrg1 * (t0 + ids); - - if (nf != 1.0) - gcrg = gcrg * nf; - - if (rgatemod == 2) - begin - t10 = grgeltd * grgeltd; - t11 = grgeltd + gcrg; - gcrg = grgeltd * gcrg / t11; - end - end - - //*************** Calculate bias-dependent external S/D resistance (line 1861-1939, file b4ld.c) ****************// - if (rdsmod == 1.0) - begin /* rs(v) */ - t0 = vgs - vfbsd; - t1 = sqrt(t0 * t0 + 1.0e-4); - vgs_eff = 0.5 * (t0 + t1); - t0 = 1.0 + prwg * vgs_eff; - t1 = -prwb * vbs; - t2 = 1.0 / t0 + t1; - t3 = t2 + sqrt(t2 * t2 + 0.01); - t4 = rs0 * 0.5; - rs = rswmin + t3 * t4; - t0 = 1.0 + gsdiff * rs; - gstot = gsdiff / t0; - /* rd(v) */ - t0 = vgd - vfbsd; - t1 = sqrt(t0 * t0 + 1.0e-4); - vgd_eff = 0.5 * (t0 + t1); - t0 = 1.0 + prwg * vgd_eff; - t1 = -prwb * vbd; - t2 = 1.0 / t0 + t1; - t3 = t2 + sqrt(t2 * t2 + 0.01); - t4 = rd0 * 0.5; - rd = rdwmin + t3 * t4; - t0 = 1.0 + gddiff * rd; - gdtot = gddiff / t0; - end - else - begin - gstot = 0.0; - gdtot = 0.0; - end - - //************** Calculate GIDL and GISL current (line 1941-2021, file b4ld.c) *******************// - t0 = 3.0 * toxe; - t1 = (vds - vgs_eff - egidl ) / t0; - - if ((agidl <= 0.0) || (bgidl <= 0.0) || (t1 <= 0.0) || (cgidl <= 0.0) || (vbd > 0.0)) - igidl = 0.0; - else - begin - t2 = bgidl / t1; - - if (t2 < 100.0) - igidl = agidl * weffcj * t1 * exp(-t2); - else - begin - igidl = agidl * weffcj * 3.720075976e-44; - igidl = igidl * t1; - end - - t4 = vbd * vbd; - t5 = -vbd * t4; - t6 = cgidl + t5; - t7 = t5 / t6; - t8 = 3.0 * cgidl * t4 / t6 / t6; - igidl = igidl * t7; - end - - t1 = (-vds - vgd_eff - egidl ) / t0; - - if ((agidl <= 0.0) || (bgidl <= 0.0) || (t1 <= 0.0) || (cgidl <= 0.0) || (vbs > 0.0)) - igisl = 0.0; - else - begin - t2 = bgidl / t1; - - if (t2 < 100.0) - igisl = agidl * weffcj * t1 * exp(-t2); - else - begin - igisl = agidl * weffcj * 3.720075976e-44; - igisl = igisl * t1; - end - - t4 = vbs * vbs; - t5 = -vbs * t4; - t6 = cgidl + t5; - t7 = t5 / t6; - t8 = 3.0 * cgidl * t4 / t6 / t6; - igisl = igisl * t7; - end - - //***************** Gate tunneling current (line 2024-2396, file b4ld.c) ****************// - if ((igcmod != 0.0) || (igbmod != 0.0)) - begin - v3 = vfbzb - Vgs_eff + vbseff - `DELTA_3; - - if (vfbzb<= 0.0) - t0 = sqrt(v3 * v3 - 4.0 * `DELTA_3 * vfbzb); - else - t0 = sqrt(v3 * v3 + 4.0 * `DELTA_3 * vfbzb); - - vfbeff = vfbzb- 0.5 * (v3 + t0); - voxacc = vfbzb- vfbeff; - - if (voxacc < 0.0) - voxacc = 0.0; - - t0 = 0.5 * k1ox; - t3 = Vgs_eff - vfbeff - vbseff - vgsteff; - - if (k1ox == 0.0) - voxdepinv = 0.0; - else if (t3 < 0.0) - voxdepinv = -t3; - else - begin - t1 = sqrt(t0 * t0 + t3); - t2 = t0 / t1; - voxdepinv = k1ox * (t1 - t0); - end - - voxdepinv = voxdepinv + vgsteff; - end - - if (igcmod == 1.0) - begin - t0 = vtm * nigc; - vxnvt = (Vgs_eff - type * vth0) / t0; - - if (vxnvt > `EXP_THRESHOLD) - vaux = Vgs_eff - type * vth0; - else if (vxnvt < -`EXP_THRESHOLD) - vaux = t0 * ln(1.0 + `MIN_EXP); - else - begin - expvxnvt = exp(vxnvt); - vaux = t0 * ln(1.0 + expvxnvt); - end - - t2 = Vgs_eff * vaux; - t11 = aechvb; - t12 = bechvb; - t3 = aigc * cigc - bigc; - t4 = bigc * cigc; - t5 = t12 * (aigc + t3 * voxdepinv - t4 * voxdepinv * voxdepinv); - - if (t5 > `EXP_THRESHOLD) - t6 = `MAX_EXP; - else if (t5 < -`EXP_THRESHOLD) - t6 = `MIN_EXP; - else - t6 = exp(t5); - - igc = t11 * t2 * t6; - - if (pigcd != -99.0) - modif_pigcd = pigcd; - else - begin - t11 = bechvb * toxe; - t12 = vgsteff + 1.0e-20; - t13 = t11 / t12 / t12; - modif_pigcd = t13 * (1.0 - 0.5 * vdseff / t12); - end - - t7 = -modif_pigcd * vdseff; - t8 = t7 * t7 + 2.0e-4; - - if (t7 > `EXP_THRESHOLD) - t9 = `MAX_EXP; - else if (t7 < -`EXP_THRESHOLD) - t9 = `MIN_EXP; - else - t9 = exp(t7); - - t0 = t8 * t8; - t1 = t9 - 1.0 + 1.0e-4; - t10 = (t1 - t7) / t8; - igcs = igc * t10; - t10 = (t7 * t9 - t1) / t8; - igcd = igc * t10; - t0 = vgs - vfbsd; - vgs_eff = sqrt(t0 * t0 + 1.0e-4); - t2 = vgs * vgs_eff; - t11 = aechvbedge; - t12 = bechvbedge; - t3 = aigsd * cigsd - bigsd; - t4 = bigsd * cigsd; - t5 = t12 * (aigsd + t3 * vgs_eff - t4 * vgs_eff * vgs_eff); - - if (t5 > `EXP_THRESHOLD) - t6 = `MAX_EXP; - else if (t5 < -`EXP_THRESHOLD) - t6 = `MIN_EXP; - else - t6 = exp(t5); - - igs = t11 * t2 * t6; - t0 = vgd - vfbsd; - vgd_eff = sqrt(t0 * t0 + 1.0e-4); - t2 = vgd * vgd_eff; - t5 = t12 * (aigsd + t3 * vgd_eff - t4 * vgd_eff * vgd_eff); - - if (t5 > `EXP_THRESHOLD) - t6 = `MAX_EXP; - else if (t5 < -`EXP_THRESHOLD) - t6 = `MIN_EXP; - else - t6 = exp(t5); - - igd = t11 * t2 * t6; - end - else - begin - igcs = 0.0; - igcd = 0.0; - igs = 0.0; - igd = 0.0; - end - - if (igbmod == 1.0) - begin - t0 = vtm * nigbacc; - t1 = -Vgs_eff + vbseff + vfbzb; - vxnvt = t1 / t0; - - if (vxnvt > `EXP_THRESHOLD) - vaux = t1; - else if (vxnvt < -(`EXP_THRESHOLD)) - begin - vaux = t0 * ln(1.0 + `MIN_EXP); - end - else - begin - expvxnvt = exp(vxnvt); - vaux = t0 * ln(1.0 + expvxnvt); - end - - t2 = (Vgs_eff - vbseff) * vaux; - t11 = 4.97232e-7 * weff * leff * toxratio; - t12 = -7.45669e11 * toxe; - t3 = aigbacc * cigbacc - bigbacc; - t4 = bigbacc * cigbacc; - t5 = t12 * (aigbacc + t3 * voxacc - t4 * voxacc * voxacc); - - if (t5 > `EXP_THRESHOLD) - t6 = `MAX_EXP; - else if (t5 < -`EXP_THRESHOLD) - t6 = `MIN_EXP; - else - t6 = exp(t5); - - igbacc = t11 * t2 * t6; - t0 = vtm * nigbinv; - t1 = voxdepinv - eigbinv; - vxnvt = t1 / t0; - - if (vxnvt > `EXP_THRESHOLD) - vaux = t1; - else if (vxnvt < -`EXP_THRESHOLD) - vaux = t0 * ln(1.0 + `MIN_EXP); - else - begin - expvxnvt = exp(vxnvt); - vaux = t0 * ln(1.0 + expvxnvt); - end - - t2 = (Vgs_eff - vbseff) * vaux; - t11 = t11 * 0.75610; - t12 = t12 * 1.31724; - t3 = aigbinv * cigbinv - bigbinv; - t4 = bigbinv * cigbinv; - t5 = t12 * (aigbinv + t3 * voxdepinv - t4 * voxdepinv * voxdepinv); - - if (t5 > `EXP_THRESHOLD) - t6 = `MAX_EXP; - else if (t5 < -`EXP_THRESHOLD) - t6 =`MIN_EXP; - else - t6 = exp(t5); - - igbinv = t11 * t2 * t6; - igb = igbinv + igbacc; - end - else - igb = 0.0; - - //***** Accounting of device fingers (line 2396-2452, file b4ld.c) *****// - if (nf != 1.0) - begin - cdrain = cdrain * nf; - csub = csub * nf; - igidl = igidl * nf; - igisl = igisl * nf; - igcs = igcs * nf; - igcd = igcd * nf; - igs = igs * nf; - igd = igd * nf; - igb = igb * nf; - end - - //***** CV model (line 2484-3288, file b4ld.c) *****// - - ccn = 1; - - if ((xpart < 0) || (ccn == 0)) - begin - qgate = 0.0; - qdrn = 0.0; - qsrc = 0.0; - qbulk = 0.0; - qgmid = 0.0; - end - else if (capmod == 0) - begin - if (vbseff < 0.0) - vbseff = Vbs; - else - vbseff = phi - phis; - - vfb = vfbcv; - vth = vfb + phi + k1ox * sqrtphis; - vgst = Vgs_eff - vth; - coxwl = coxe * weffcv * leffcv * nf; - arg1 = Vgs_eff - vbseff - vfb; - - if (arg1 <= 0.0) - begin - qgate = coxwl * arg1; - qbulk = -qgate; - qdrn = 0.0; - end - else if (vgst <= 0.0) - begin - t1 = 0.5 * k1ox; - t2 = sqrt(t1 * t1 + arg1); - qgate = coxwl * k1ox * (t2 - t1); - qbulk = -qgate; - qdrn = 0.0; - end - else - begin - two_third_coxwl = 2.0 * (coxe * weffcv * leffcv * nf) / 3.0; - abulkcv = abulk0 * abulkcvfactor; - vdsat = vgst / abulkcv; - - if (xpart > 0.5) - begin - /* 0/100 Charge partition model */ - if (vdsat <= Vds) - begin - /* saturation region */ - t1 = vdsat / 3.0; - qgate = coxwl * (Vgs_eff - vfb - phi - t1); - t2 = -two_third_coxwl * vgst; - qbulk = -(qgate + t2); - qdrn = 0.0; - end - else - begin - /* linear region */ - alphaz = vgst / vdsat; - t1 = 2.0 * vdsat - Vds; - t2 = Vds / (3.0 * t1); - t3 = t2 * Vds; - t9 = 0.25 * coxwl; - t4 = t9 * alphaz; - t7 = 2.0 * Vds - t1 - 3.0 * t3; - t8 = t3 - t1 - 2.0 * Vds; - qgate = coxwl * (Vgs_eff - vfb - phi - 0.5 * (Vds - t3)); - t10 = t4 * t8; - qdrn = t4 * t7; - qbulk = -(qgate + qdrn + t10); - end - end - else if (xpart < 0.5) - begin - /* 40/60 Charge partition model */ - if (Vds >= vdsat) - begin - /* saturation region */ - t1 = vdsat / 3.0; - qgate = coxwl * (Vgs_eff - vfb - phi - t1); - t2 = -two_third_coxwl * vgst; - qbulk = -(qgate + t2); - qdrn = 0.4 * t2; - end - else - begin - /* linear region */ - alphaz = vgst / vdsat; - t1 = 2.0 * vdsat - Vds; - t2 = Vds / (3.0 * t1); - t3 = t2 * Vds; - t9 = 0.25 * coxwl; - t4 = t9 * alphaz; - qgate = coxwl * (Vgs_eff - vfb - phi - 0.5 * (Vds - t3)); - t6 = 8.0 * vdsat * vdsat - 6.0 * vdsat * Vds + 1.2 * Vds * Vds; - t8 = t2 / t1; - t7 = Vds - t1 - t8 * t6; - qdrn = t4 * t7; - t7 = 2.0 * (t1 + t3); - qbulk = -(qgate - t4 * t7); - end - end - else - begin - /* 50/50 partitioning */ - if (Vds >= vdsat) - begin - /* saturation region */ - t1 = vdsat / 3.0; - qgate = coxwl * (Vgs_eff - vfb - phi - t1); - t2 = -two_third_coxwl * vgst; - qbulk = -(qgate + t2); - qdrn = 0.5 * t2; - end - else - begin - /* linear region */ - alphaz = vgst / vdsat; - t1 = 2.0 * vdsat - Vds; - t2 = Vds / (3.0 * t1); - t3 = t2 * Vds; - t9 = 0.25 * coxwl; - t4 = t9 * alphaz; - qgate = coxwl * (Vgs_eff - vfb - phi - 0.5 * (Vds - t3)); - t7 = t1 + t3; - qdrn = -t4 * t7; - qbulk = - (qgate + qdrn + qdrn); - end - end - end - end - else - begin - if (vbseff < 0.0) - vbseffcv = vbseff; - else - vbseffcv = phi - phis; - - coxwl = coxe * weffcv * leffcv * nf; - t0 = vtm * n * noff; - vgstnvt = (vgst - voffcv) / t0; - - if (vgstnvt > `EXP_THRESHOLD) - vgsteff = vgst - voffcv; - else if (vgstnvt < -`EXP_THRESHOLD) - vgsteff = t0 * ln(1.0 + `MIN_EXP); - else - vgsteff = t0 * ln(1.0 + exp(vgstnvt)); - - if (capmod == 1) - begin - v3 = vfbzb - Vgs_eff + vbseffcv - `DELTA_3; - - if (vfbzb <= 0.0) - t0 = sqrt(v3 * v3 - 4.0 * `DELTA_3 * vfbzb); - else - t0 = sqrt(v3 * v3 + 4.0 * `DELTA_3 * vfbzb); - - t1 = 0.5 * (1.0 + v3 / t0); - vfbeff = vfbzb - 0.5 * (v3 + t0); - qac0 = coxwl * (vfbeff - vfbzb); - t0 = 0.5 * k1ox; - t3 = Vgs_eff - vfbeff - vbseffcv - vgsteff; - - if (k1ox == 0.0) - begin - t1 = 0.0; - t2 = 0.0; - end - else if (t3 < 0.0) - begin - t1 = t0 + t3 / k1ox; - t2 = coxwl; - end - else - begin - t1 = sqrt(t0 * t0 + t3); - t2 = coxwl * t0 / t1; - end - - qsub0 = coxwl * k1ox * (t1 - t0); - abulkcv = abulk0 * abulkcvfactor; - vdsatcv = vgsteff / abulkcv; - t0 = vdsatcv - Vds - `DELTA_4; - t1 = sqrt(t0 * t0 + 4.0 * `DELTA_4 * vdsatcv); - - if (t0 >= 0.0) - vdseffcv = vdsatcv - 0.5 * (t0 + t1); - else - begin - t3 = (`DELTA_4 + `DELTA_4) / (t1 - t0); - t4 = 1.0 - t3; - t5 = vdsatcv * t3 / (t1 - t0); - vdseffcv = vdsatcv * t4; - end - - if (Vds == 0.0) - vdseffcv = 0.0; - - t0 = abulkcv * vdseffcv; - t1 = 12.0 * (vgsteff - 0.5 * t0 + 1.0e-20); - t2 = t0 / t1; - t3 = t0 * t2; - qgate = coxwl * (vgsteff - 0.5 * t0 + t3); - t7 = 1.0 - abulkcv; - qbulk = coxwl * t7 * (0.5 * vdseffcv - t3); - - if (xpart > 0.5) - begin - /* 0/100 Charge petition model */ - t1 = t1 + t1; - qsrc = -coxwl * (0.5 * vgsteff + 0.25 * t0 - t0 * t0 / t1); - end - else if (xpart < 0.5) - begin - /* 40/60 Charge petition model */ - t1 = t1 / 12.0; - t2 = 0.5 * coxwl / (t1 * t1); - t3 = vgsteff * (2.0 * t0 * t0 / 3.0 + vgsteff * (vgsteff - 4.0 * t0 / 3.0)) - 2.0 * t0 * t0 * t0 / 15.0; - qsrc = -t2 * t3; - end - else - /* 50/50 Charge petition model */ - qsrc = -0.5 * (qgate + qbulk); - - qgate = qgate + qac0 + qsub0; - qbulk = qbulk - (qac0 + qsub0); - qdrn = -(qgate + qbulk + qsrc); - end - else if (capmod == 2) - begin - v3 = vfbzb - Vgs_eff + vbseffcv - `DELTA_3; - - if (vfbzb <= 0.0) - t0 = sqrt(v3 * v3 - 4.0 * `DELTA_3 * vfbzb); - else - t0 = sqrt(v3 * v3 + 4.0 * `DELTA_3 * vfbzb); - - t1 = 0.5 * (1.0 + v3 / t0); - vfbeff = vfbzb - 0.5 * (v3 + t0); - tox = 1.0e8 * toxp; - t0 = (Vgs_eff - vbseffcv - vfbzb) / tox; - tmp = t0 * acde; - - if ((-`EXP_THRESHOLD < tmp) && (tmp < `EXP_THRESHOLD)) - tcen = ldeb * exp(tmp); - else if (tmp <= -`EXP_THRESHOLD) - tcen = ldeb * `MIN_EXP; - else - tcen = ldeb * `MAX_EXP; - - link = 1.0e-3 * toxp; - v3 = ldeb - tcen - link; - v4 = sqrt(v3 * v3 + 4.0 * link * ldeb); - tcen = ldeb - 0.5 * (v3 + v4); - ccen = `EPSSI / tcen; - t2 = coxp / (coxp + ccen); - coxeff = t2 * ccen; - coxwlcen = coxwl * coxeff / coxe; - qac0 = coxwlcen * (vfbeff - vfbzb); - t0 = 0.5 * k1ox; - t3 = Vgs_eff - vfbeff - vbseffcv - vgsteff; - - if (k1ox == 0.0) - begin - t1 = 0.0; - t2 = 0.0; - end - else if (t3 < 0.0) - begin - t1 = t0 + t3 / k1ox; - t2 = coxwlcen; - end - else - begin - t1 = sqrt(t0 * t0 + t3); - t2 = coxwlcen * t0 / t1; - end - - qsub0 = coxwlcen * k1ox * (t1 - t0); - - if (k1ox <= 0.0) - begin - denomi = 0.25 * moin * vtm; - t0 = 0.5 * sqrtphi; - end - else - begin - denomi = moin * vtm * k1ox * k1ox; - t0 = k1ox * sqrtphi; - end - - t1 = 2.0 * t0 + vgsteff; - deltaphi = vtm * ln(1.0 + t1 * vgsteff / denomi); - tox = tox + tox; - t0 = (vgsteff + vtfbphi2) / tox; - tmp = exp(0.7 * ln(t0)); - t1 = 1.0 + tmp; - tcen = 1.9e-9 / t1; - ccen = `EPSSI / tcen; - t0 = coxp / (coxp + ccen); - coxeff = t0 * ccen; - coxwlcen = coxwl * coxeff / coxe; - abulkcv = abulk0 * abulkcvfactor; - vdsatcv = (vgsteff - deltaphi) / abulkcv; - t0 = vdsatcv - Vds - `DELTA_4; - t1 = sqrt(t0 * t0 + 4.0 * `DELTA_4 * vdsatcv); - - if (t0 >= 0.0) - vdseffcv = vdsatcv - 0.5 * (t0 + t1); - else - begin - t3 = (`DELTA_4 + `DELTA_4) / (t1 - t0); - t4 = 1.0 - t3; - vdseffcv = vdsatcv * t4; - end - - if (Vds == 0.0) - vdseffcv = 0.0; - - t0 = abulkcv * vdseffcv; - t1 = vgsteff - deltaphi; - t2 = 12.0 * (t1 - 0.5 * t0 + 1.0e-20); - t3 = t0 / t2; - qgate = coxwlcen * (t1 - t0 * (0.5 - t3)); - t7 = 1.0 - abulkcv; - qbulk = coxwlcen * t7 * (0.5 * vdseffcv - t0 * vdseffcv / t2); - - if (xpart > 0.5) - /* 0/100 partition */ - qsrc = -coxwlcen * (t1 / 2.0 + t0 / 4.0 - 0.5 * t0 * t0 / t2); - else if (xpart < 0.5) - begin - /* 40/60 partition */ - t2 = t2 / 12.0; - t3 = 0.5 * coxwlcen / (t2 * t2); - t4 = t1 * (2.0 * t0 * t0 / 3.0 + t1 * (t1 - 4.0 * t0 / 3.0)) - 2.0 * t0 * t0 * t0 / 15.0; - qsrc = -t3 * t4; - end - else - /* 50/50 partition */ - qsrc = -0.5 * qgate; - - qgate = qgate + qac0 + qsub0 - qbulk; - qbulk = qbulk - (qac0 + qsub0); - qdrn = -(qgate + qbulk + qsrc); - end - end - - if (ccn == 1) - qsrc = -(qgate + qbulk + qdrn); - - //***** Junction Diode CV Model (line 3333-3450, file b4ld.c) *****// - if (ccn == 1) - begin - czbd = cjd_temp * adeff; - czbs = cjs_temp * aseff; - czbdsw = cjswd_temp * pdeff; - czbdswg = cjswgd_temp * weffcj * nf; - czbssw = cjsws_temp * pseff; - czbsswg = cjswgs_temp * weffcj * nf; - - /* Source Bulk Junction */ - if (vbs_jct == 0.0) - qbs = 0.0; - else if (vbs_jct < 0.0) - begin - if (czbs > 0.0) - begin - arg = 1.0 - vbs_jct / phibs; - - if (mjs == 0.5) - sarg = 1.0 / sqrt(arg); - else - sarg = exp(-mjs * ln(arg)); - - qbs = phibs * czbs * (1.0 - arg * sarg) / (1.0 - mjs); - end - else - qbs = 0.0; - - if (czbssw > 0.0) - begin - arg = 1.0 - vbs_jct / phibsws; - - if (mjsws == 0.5) - sarg = 1.0 / sqrt(arg); - else - sarg = exp(-mjsws * ln(arg)); - - qbs = qbs + phibsws * czbssw * (1.0 - arg * sarg) / (1.0 - mjsws); - end - - if (czbsswg > 0.0) - begin - arg = 1.0 - vbs_jct / phibswgs; - - if (mjswgs == 0.5) - sarg = 1.0 / sqrt(arg); - else - sarg = exp(-mjswgs * ln(arg)); - - qbs = qbs + phibswgs * czbsswg * (1.0 - arg * sarg) / (1.0 - mjswgs); - end - end - else - begin - t0 = czbs + czbssw + czbsswg; - t1 = vbs_jct * (czbs * mjs / phibs + czbssw * mjsws / phibsws + czbsswg * mjswgs / phibswgs); - qbs = vbs_jct * (t0 + 0.5 * t1); - end - - /* Drain Bulk Junction */ - if (vbd_jct == 0.0) - qbd = 0.0; - else if (vbd_jct < 0.0) - begin - if (czbd > 0.0) - begin - arg = 1.0 - vbd_jct / phibd; - - if (mjd == 0.5) - sarg = 1.0 / sqrt(arg); - else - sarg = exp(-mjd * ln(arg)); - - qbd = phibd * czbd * (1.0 - arg * sarg) / (1.0 - mjd); - end - else - qbd = 0.0; - - if (czbdsw > 0.0) - begin - arg = 1.0 - vbd_jct / phibswd; - - if (mjswd == 0.5) - sarg = 1.0 / sqrt(arg); - else - sarg = exp(-mjswd * ln(arg)); - - qbd = qbd + phibswd * czbdsw * (1.0 - arg * sarg) / (1.0 - mjswd); - end - - if (czbdswg > 0.0) - begin - arg = 1.0 - vbd_jct / phibswgd; - - if (mjswgd == 0.5) - sarg = 1.0 / sqrt(arg); - else - sarg = exp(-mjswgd * ln(arg)); - - qbd = qbd + phibswgd * czbdswg * (1.0 - arg * sarg) / (1.0 - mjswgd); - end - end - else - begin - t0 = czbd + czbdsw + czbdswg; - t1 = vbd_jct * (czbd * mjd / phibd + czbdsw * mjswd / phibswd + czbdswg * mjswgd / phibswgd); - qbd = vbd_jct * (t0 + 0.5 * t1); - end - end - - //***** Overlap capacitances (line 3519-3558, file b4ld.c) *****// - if (ccn == 1) - begin - if (capmod == 0) - begin - cgdo = param_cgdo; - cgso = param_cgso; - qgdo = param_cgdo * vgd; - qgso = param_cgso * vgs; - end - else /* For both capMod == 1 and 2 */ - begin - t0 = vgd + `DELTA_1; - t1 = sqrt(t0 * t0 + 4.0 * `DELTA_1); - t2 = 0.5 * (t0 - t1); - t3 = weffcv * cgdl; - t4 = sqrt(1.0 - 4.0 * t2 / ckappad); - cgdo = param_cgdo + t3 - t3 * (1.0 - 1.0 / t4) * (0.5 - 0.5 * t0 / t1); - qgdo = (param_cgdo + t3) * vgd - t3 * (t2 + 0.5 * ckappad * (t4 - 1.0)); - t0 = vgs + `DELTA_1; - t1 = sqrt(t0 * t0 + 4.0 * `DELTA_1); - t2 = 0.5 * (t0 - t1); - t3 = weffcv * cgsl; - t4 = sqrt(1.0 - 4.0 * t2 / ckappas); - cgso = param_cgso + t3 - t3 * (1.0 - 1.0 / t4) * (0.5 - 0.5 * t0 / t1); - qgso = (param_cgso + t3) * vgs - t3 * (t2 + 0.5 * ckappas * (t4 - 1.0)); - end - - if (nf != 1.0) - begin - cgdo = cgdo * nf; - cgso = cgso * nf; - qgdo = qgdo * nf; - qgso = qgso * nf; - end - - if (mode > 0) - begin - qdrn = qdrn - qgdo; - - if (rgatemod == 3) - begin - qgmb = cgbo * vgmb; - qgmid = qgdo + qgso + qgmb; - qbulk = qbulk - qgmb; - qsrc = -(qgate + qgmid + qbulk + qdrn); - end - else - begin - qgb = cgbo * vgb; - qgate = qgate + qgdo + qgso + qgb; - qbulk = qbulk - qgb; - qsrc = -(qgate + qbulk + qdrn); - end - end - else - begin - qsrc = qdrn - qgso; - - if (rgatemod == 3) - begin - qgmb = cgbo * vgmb; - qgmid = qgdo + qgso + qgmb; - qbulk = qbulk - qgmb; - qdrn = -(qgate + qgmid + qbulk + qsrc); - end - else - begin - qgb = cgbo * vgb; - qgate = qgate + qgdo + qgso + qgb; - qbulk = qbulk - qgb; - qdrn = -(qgate + qbulk + qsrc); - end - end - - qd = qdrn - qbd; - qs = qsrc - qbs; - - if (rbodymod == 0) - qb = qbulk + qbd + qbs; - else - qb = qbulk; - end - - //****** Here all currents going through the device are taken in account ******// - I(sourceb, sourcep) <+ type * cbs; - I(drainb, drainp) <+ type * cbd; - - if (igbmod == 1) - I(bulk, gatep) <+ -type * igb; - - if (igcmod == 1) - begin - I(source, gatep) <+ -type * (igs + igcs); - I(drain, gatep) <+ -type * (igd + igcd); - end - - if (mode == 1) - begin - I(drainp , sourcep) <+ type * cdrain; - I(drainp , bulkp) <+ type * (csub + igidl); - I(sourcep, bulkp) <+ type * igisl; - end - else - begin - I(drainp , sourcep) <+ -type * cdrain; - I(drainp , bulkp) <+ type * (csub + igisl); - I(sourcep, bulkp) <+ type * igidl; - end - - if (rdsmod == 0) - begin -// Voltage short changed to current form with 1m Ohm resistor, MEB -// V(source, sourcep) <+ 0; - I(source, sourcep) <+ V(source, sourcep)*1e3; -// V(drainp, drain) <+ 0; - I(drainp, drain) <+ V(drainp, drain)*1e3; - end - else - begin - I(drain, drainp) <+ type * gdtot * vded; - I(source, sourcep) <+ type * gstot * vses; - end - - if (rgatemod == 0) - begin -// V(gate, gatem) <+ 0; - I(gate, gatem) <+ V(gate, gatem)*1e3; -// V(gatem, gatep) <+ 0; - I(gatem, gatep) <+ V(gatem, gatep)*1e3; - end - else if (rgatemod == 1) - begin -// V(gatep, gatem) <+ 0; - I(gatep, gatem) <+ V(gatep, gatem)*1e3; - I(gate, gatem) <+ type * grgeltd * vgeg; - end - else if (rgatemod == 2) - begin -// V(gatep, gatem) <+ 0; - I(gatep, gatem) <+ V(gatep, gatem)*1e3; - I(gate, gatem) <+ type * gcrg * vgeg; - end - else - begin - I(gatem, gatep) <+ type * gcrg * vgmg; - I(gate, gatem) <+ type * grgeltd * vgegm; - `ifdef RGATE3 - I(gatem, sourcep) <+ type * ddt(qgmid); - `endif - end - - if (rbodymod == 0) - begin -// V(bulk, bulkp) <+ 0; - I(bulk, bulkp) <+ V(bulk, bulkp)*1e3; -// V(bulkp, sourceb) <+ 0; - I(bulkp, sourceb) <+ V(bulkp, sourceb)*1e3; -// V(bulkp, drainb) <+ 0; - I(bulkp, drainb) <+ V(bulkp, drainb)*1e3; - end - else - begin - I(sourceb, bulkp) <+ -type * grbps * vbsb; - I(drainb, bulkp) <+ -type * grbpd * vbdb; - I(bulk, bulkp) <+ type * grbpb * vbeb; - I(bulk, sourceb) <+ type * grbsb * vbesb; - I(bulk, drainb) <+ type * grbdb * vbedb; - end - - I(gatep, sourcep) <+ type * ddt(qgate); - I(drainp, sourcep) <+ type * ddt(qd); - I(bulkp, sourcep) <+ type * ddt(qb); - -// -// Noise addeed to Qucs ADMS 2.30 port, June 2013 M.E. Brinson. -// Basic noise implementation for TNOIDMOD = 0. -// - if (TNOIMOD == 0) - begin - fourkt = 5.5226012e-23*Temp; - leffx2 = leff*leff; - I(drainp, sourcep) <+ white_noise( (fourkt*NTNOI*ueff*abs(qd+qs)) / leffx2, "channel" ); - - end - - if (FNOIMOD == 0) - begin - leffx2 = leff*leff; - I(drainp, sourcep) <+ flicker_noise( (KF*pow(abs(cdrain), AF)) / (cox*leffx2), EF, "flicker" ); - end - - I(drain, drainp) <+ white_noise( abs(fourkt*gdtot), "thermal" ); - I(sourcep, source) <+ white_noise( abs(fourkt*gstot), "thermal" ); - -// End of noise code. - - `ifdef RBODY - if (rbodymod == 1) - begin - I(drainb, sourcep) <+ type * ddt(qbd); - I(sourceb, sourcep) <+ type * ddt(qbs); - end - `endif - - end - endmodule diff --git a/qucs-core/src/components/verilog/fbh_hbt-2_2a.va b/qucs-core/src/components/verilog/fbh_hbt-2_2a.va deleted file mode 100644 index 9aa7a2055d..0000000000 --- a/qucs-core/src/components/verilog/fbh_hbt-2_2a.va +++ /dev/null @@ -1,699 +0,0 @@ -/* - FBH_HBT model version 2.1.20050830 - - Copyright (C) 2005 Ferdinand-Braun-Institut - im Forschungsverbund Berlin (FBH) - Gustav-Kirchhoff-Str. 4 - D-12489 Berlin - - All rights reserved. - - By downloading this code, you agree that FBH shall not be held - to any liability with respect to any claim by you or from any - third party arising from or on account of the use of this code, - regardless of the form of action, including negligence. In no event - will FBH be liable for consequential or incidental damages of - any nature whatsoever. - - Model documentation: - - www.fbh-berlin.de/modeling.html - rudolph@fbh-berlin.de -*/ - -`include "disciplines.vams" -`include "constants.vams" - -`define STDTEMP 20.0 -`define KDURCHQ 0.861708692e-4 - -`define FOUR_K (4 * 1.3806226e-23) -`define TWO_Q (2 * 1.6021918e-19) - -`define sqr(x) (x*x) - - - -// begin of FBH HBT model -module HBT_X(c,b,e,t); - -//external nodes - inout e,b,c,t; - electrical e,b,c; - thermal t; - - //internal nodes - electrical ei, bi, bii, ci, ex, exx, cx, ni, nii, niix, niii, niiix, niv, nivx; - thermal ti; - - //model parameters - parameter integer Mode = 1 from [0:4]; // Ignored - parameter integer Noise = 1 from [0:4]; // Ignored - parameter integer Debug = 0 from [0:inf); // Ignored - parameter integer DebugPlus = 0 from [0:inf); // Ignored - - parameter real Temp = 25.0 from [-273.15:inf); // Device operating temperature, Celsius - parameter real Rth = 0.1 from [0.0:inf); // Thermal resistance, K/W - parameter real Cth = 700n from [0.0:inf); // Thermal capacitance - - parameter integer N = 1 from (0:inf); // Scaling factor, number of emitter fingers - parameter real L = 30u from (0.0:inf); // Length of emitter finger, m - parameter real W = 3u from (0.0:inf); // Width of emitter finger, m - - parameter real Jsf = 20e-24 from [0.0:inf); // Forward saturation current density, A/um^2 - parameter real nf = 1.0 from [0.0:inf); // Forward current emission coefficient - parameter real Vg = 1.3 from [-2.0:inf); // Forward thermal activation energy, V, (0 == disables temperature dependence) - - parameter real Jse = 0.0 from [0.0:inf); // B-E leakage saturation current density, A/um^2 - parameter real ne = 0.0 from [0.0:inf); // B-E leakage emission coefficient - parameter real Rbxx = 1e6 from (0.0:inf); // Limiting resistor of B-E leakage diode, Ohm - parameter real Vgb = 0.0 from [0.0:inf); // B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - parameter real Jsee = 0.0 from [0.0:inf); // 2nd B-E leakage saturation current density, A/um^2 - parameter real nee = 0.0 from [0.0:inf); // 2nd B-E leakage emission coefficient - parameter real Rbbxx= 1e6 from (0.0:inf); // 2nd Limiting resistor of B-E leakage diode, Ohm - parameter real Vgbb = 0.0 from [0.0:inf); // 2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - parameter real Jsr = 20e-18 from [0.0:inf); // Reverse saturation current density, A/um^2 - parameter real nr = 1.0 from [0.0:inf); // Reverse current emission coefficient - parameter real Vgr = 0.0 from [0.0:inf); // Reverse thermal activation energy, V, (0 == disables temperature dependence) - parameter real XCjc = 0.5 from [0.0:1.0); // Fraction of Cjc that goes to internal base node - - parameter real Jsc = 0.0 from [0.0:inf); // B-C leakage saturation current density, A/um^2 (0. switches off diode) - parameter real nc = 0.0 from [0.0:inf); // B-C leakage emission coefficient (0. switches off diode) - parameter real Rcxx = 1e6 from (0.0:inf); // Limiting resistor of B-C leakage diode, Ohm - parameter real Vgc = 0.0 from [0.0:inf); // B-C leakage thermal activation energy, V, (0 == disables temperature dependence) - - parameter real Bf = 100.0 from [0.0:inf); // Ideal forward beta - parameter real kBeta= 0.0 from [0.0:inf); // Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence) - parameter real Br = 1.0 from [0.0:inf); // Ideal reverse beta - - parameter real VAF = 0.0 from [0.0:inf); // Forward Early voltage, V, (0 == disables Early Effect) - parameter real VAR = 0.0 from [0.0:inf); // Reverse Early voltage, V, (0 == disables Early Effect) - - parameter real IKF = 0.0 from [0.0:inf); // Forward high-injection knee current, A, (0 == disables Webster Effect) - parameter real IKR = 0.0 from [0.0:inf); // Reverse high-injection knee current, A, (0 == disables Webster Effect) - - parameter real Mc = 0.0 from [0.0:inf); // C-E breakdown exponent, (0 == disables collector break-down) - parameter real BVceo= 0.0 from [0.0:inf); // C-E breakdown voltage, V, (0 == disables collector break-down) - parameter real kc = 0.0 from [0.0:inf); // C-E breakdown factor, (0 == disables collector break-down) - - parameter real BVebo= 0.0 from [0.0:inf); // B-E breakdown voltage, V, (0 == disables emitter break-down) - - parameter real Tr = 1f from [0.0:inf); // Ideal reverse transit time, s - parameter real Trx = 1f from [0.0:inf); // Extrinsic BC diffusion capacitance, s - parameter real Tf = 1p from [0.0:inf); // Ideal forward transit time, s - parameter real Tft = 0.0 from [0.0:inf); // Temperature coefficient of forward transit time - parameter real Thcs = 0.0 from [0.0:inf); // Excess transit time coefficient at base push-out - parameter real Ahc = 0.0 from [0.0:inf); // Smoothing parameter for Thcs - - parameter real Cje = 1f from [0.0:inf); // B-E zero-bias depletion capacitance, F/um^2 - parameter real mje = 0.5 from [0.0:1); // B-E junction exponential factor - parameter real Vje = 1.3 from [0.0:inf); // B-E junction built-in potential, V - - parameter real Cjc = 1f from [0.0:inf); // B-C zero-bias depletion capacitance, F/um^2 - parameter real mjc = 0.5 from [0.0:inf); // B-C junction exponential factor - parameter real Vjc = 1.3 from [0.0:inf); // B-C junction built-in potential, V - parameter real kjc = 1.0 from (-inf:inf); // not used - parameter real Cmin = 0.1f from [0.0:inf); // Minimum B-C depletion capacitance (Vbc dependence), F/um^2 - - parameter real J0 = 1e-3 from [0.0:inf); // Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction) - parameter real XJ0 = 1.0 from [0.0:1.0]; // Fraction of Cmin, lower limit of BC capacitance (Ic dependence) - parameter real Rci0 = 1e-3 from (0.0:inf); // Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out) - parameter real Jk = 4e-4 from [0.0:inf); // Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out) - parameter real RJk = 1e-3 from [0.0:inf); // Slope of Jk at high currents , Ohm*um^2 - parameter real Vces = 1e-3 from [0.0:inf); // Voltage shift of base push-out onset, V - - parameter real Rc = 1.0 from (0.0:inf); // Collector resistance, Ohm/finger - parameter real Re = 1.0 from (0.0:inf); // Emitter resistance, Ohm/finger - parameter real Rb = 1.0 from (0.0:inf); // Extrinsic base resistance, Ohm/finger - parameter real Rb2 = 1.0 from (0.0:inf); // Inner Base ohmic resistance, Ohm/finger - - parameter real Lc = 0.0 from [0.0:inf); // Collector inductance, H - parameter real Le = 0.0 from [0.0:inf); // Emitter inductance, H - parameter real Lb = 0.0 from [0.0:inf); // Base inductance, H - - parameter real Cq = 0.0 from [0.0:inf); // Extrinsic B-C capacitance, F - parameter real Cpb = 0.0 from [0.0:inf); // Extrinsic base capacitance, F - parameter real Cpc = 0.0 from [0.0:inf); // Extrinsic collector capacitance, F - - parameter real Kfb = 0.0 from [0.0:inf); // Flicker-noise coefficient - parameter real Afb = 0.0 from [0.0:inf); // Flicker-noise exponent - parameter real Ffeb = 0.0 from [0.0:inf); // Flicker-noise frequency exponent - parameter real Kb = 0.0 from [0.0:inf); // Burst noise coefficient - parameter real Ab = 0.0 from [0.0:inf); // Burst noise exponent - parameter real Fb = 0.0 from (0.0:inf); // Burst noise corner frequency, Hz - parameter real Kfe = 0.0 from [0.0:inf); // Flicker-noise coefficient - parameter real Afe = 0.0 from [0.0:inf); // Flicker-noise exponent - parameter real Ffee = 0.0 from [0.0:inf); // Flicker-noise frequency exponent - - parameter real Tnom = 20.0 from [-273.15:inf); // Ambient temperature at which the parameters were determined - - // general functions - // - // safe exponential function - analog function real exp_soft; - input x; - real x, maxexp, maxarg; - begin - - maxexp = 1.0e25; - maxarg = ln(maxexp); - if (x < maxarg) begin - exp_soft = exp(x); - end - else begin - exp_soft = (x+1.0-maxarg)*(maxexp); - end - end - endfunction - - // limited internal Voltage - analog function real Vt; - input U, Ud; - real U, Ud, Vch, VF; - begin - Vch = 0.1 * Ud; - VF = 0.9 * Ud; // we fix this value for simplicity. - - if (U < VF) - Vt = U - Vch * ln(1.0 + exp((U-VF)/Vch)); - else - Vt = VF - Vch * ln(1.0 + exp((VF-U)/Vch)); - end - endfunction - - // diode function - analog function real diode; - input U, Is, Ug, N, AREA, TJ, TNOM; - real U, Is, Ug, N, AREA, TJ, TNOM, VTH0, VTHJ, VTHNOM, maxi, Tmax, TJM, KDURCHQ, lnIs; - begin - - VTH0=$vt(20.0+273.15); - VTHNOM=$vt(TNOM+273.15); - KDURCHQ = 0.861708692e-4; - lnIs=ln(Is*AREA); - - maxi=ln(1e6); - if ((maxi<(Ug/VTHNOM)) && (U < 0.0)) - begin - Tmax= Ug*VTHNOM/((Ug - maxi*VTHNOM)*KDURCHQ) - 273.15; - TJM=Vt(TJ,Tmax); - end - else - begin - TJM=TJ; - end - VTHJ = $vt(TJM+273.15); - - if (Ug > 0.0) begin - diode = exp_soft(U/(N*VTHJ) + Ug/VTHNOM - Ug/VTHJ + lnIs) - exp_soft(Ug/VTHNOM - Ug/VTHJ + lnIs); - end - else begin - diode = exp_soft(U/(N*(VTH0)) + lnIs) - Is*AREA; - end - end - endfunction - - // CE-breakdown function - analog function real MM; - input VBCI, VCBO, MC, VCBLIN, BF, KC; - real VBCI, VCBO, MC, VCBLIN, BF, KC; - real FBD, vcbi; - begin - - if((KC > 0.0) && (MC > 0.0) && (VCBO > 0.0)) begin - vcbi = VBCI; - FBD = VCBLIN/VCBO; - if(VBCI > 0.0) - MM = 1.0; - else if(VBCI > (-VCBLIN)) begin - if (MC==1) - MM = 1.0/(1.0 - (vcbi/(-VCBO))); - else - MM = 1.0/(1.0 - pow(vcbi/(-VCBO),MC)); - end - else if(VBCI <= (-VCBLIN)) begin - if (MC==1) begin - MM = 1.0/(1.0 - FBD) - 1.0/VCBO * - 1.0/pow(1.0 - FBD,2.0) * (vcbi + FBD*VCBO); - end - else begin - MM = 1.0/(1.0 - pow(FBD,MC)) - MC/VCBO * - pow(FBD,MC-1.0)/pow(1.0 - - pow(FBD,MC),2.0) * (vcbi + FBD*VCBO); - end - end - end - else - MM = 1.0; - end - endfunction - - - // Depletion Charge - analog function real charge; - input U, C0, Ud, m, Area; - real U, C0, Ud, m, Area, Vj, Vjo, VF; - begin - Vj = Vt(U,Ud); - Vjo = Vt(0.0,Ud); - VF = 0.9 * Ud; // we fix this value for simplicity. - - if(m==1.0) begin - charge = Area*(C0)* - ( Ud*( ln(1.0 - Vjo/Ud) - - ln(1.0 - Vj/Ud) - ) + - 1.0/(1.0 - VF/Ud) * (U - Vj + Vjo)); - end - else begin - charge = Area*(C0)* - ( (Ud/(1.0-m))*( pow(1.0 - Vjo/Ud , 1.0-m) - - pow(1.0 - Vj/Ud , 1.0-m) - ) + - pow(1.0 - VF/Ud,-m) * (U - Vj + Vjo) - - Ud*(1.0/(1.0-m))); - end - end - endfunction - - - // limited internal Voltage - analog function real Vceff; - input U, VCES; - real U, VCES, Vth0; - begin - Vth0 = 0.025; - - if (U < VCES) - Vceff = Vth0 + Vth0 * ln(1.0 + exp((U-VCES)/Vth0 - 1.0)); - else - Vceff = (U-VCES) + Vth0 * ln(1.0 + exp(1.0-(U-VCES)/Vth0)); - end - endfunction - - // Current for Onset of Kirk effect - analog function real ICK; - input U, RCI0, VLIM, InvVPT, VCES; - real U, RCI0, VLIM, InvVPT, VCES, VC, x; - begin - VC = Vceff(U,VCES); - x = (VC - VLIM)*InvVPT; - ICK = VC/RCI0 * (1.0/sqrt(1.0 + (VC/VLIM)*(VC/VLIM)))*(1.0 + (x + sqrt((x*x)+0.001))/2.0); - end - endfunction - - - - //local variables - real vbcx, vbci, vbei, vxe, vxxe, vxc, vcei; - real Ic0, Ic1, Ic1r, Ib2, Ibx, - Ib0, Ibdx, Icdx, Ibdxx, Ib1, Ic0a, Ic1ra, - Ipdiss; - real qb2; - real qb2med, qb1, xtff, qbe, qbtr, - qbtra, qbtf; - real EdBeta, mm; - real epsi, Vbclin; - real Texi, Tex, Tj, TjK, Area; - real RCIO, AHC, Ih, Wh, Vlim, InvVpt, q1, q2, qb, I00; - real xix; - real FOUR_K,TWO_Q, Iniix, Iniiix, Inivx; - - - - - // linearization boundary for CE-breakdown - analog begin - - // - // begin of model equations - // - // Port Voltages - vbcx = V(bi,ci); - vbci = V(bii,ci); - vbei = V(bii,ei); - vxe = V(ex,ei); - vxc = V(cx,ci); - vxxe = V(exx,ei); - vcei = V(ci,ei); - - Texi = Temp(ti); - Tj = Texi + Temp; // Junction temperature - TjK = Tj+273.15; // Junction temperature in K - Tex = Tj - Tnom; // Temperature difference to reference - - Area = L*W*(1.0e12) * N; // Emitter area in um^2 - - FOUR_K = 4 * 1.3806226e-23; // 4 k for noise - TWO_Q = 2 * 1.6021918e-19; // 2 q for noise - - // - // Nonlinear Part --- Current Sources - // - // Collector Currents - - Ic0a = diode(vbei,Jsf,Vg,nf,Area,Tj,Tnom); - Ic1ra = diode(vbci,XCjc*Jsr,Vgr,nr,Area,Tj,Tnom); - - // Early-Effect borrowed from VBIC - if((VAF >0.0) && (VAR >0.0)) begin - q1 = (1.0 + (charge(vbei,1.0,Vje,mje,1.0)-charge(0.0,1.0,Vje,mje,1.0))/VAR + - (charge(vbci,1.0,Vjc,mjc,1.0)-charge(0.0,1.0,Vjc,mjc,1.0))/VAF); - end - else if((VAF >0.0) && (VAR == 0.0)) begin - q1 = (1.0 + (charge(vbci,1.0,Vjc,mjc,1.0)-charge(0.0,1.0,Vjc,mjc,1.0))/VAF); - end - else if((VAF ==0.0) && (VAR > 0.0)) begin - q1 = (1.0 + (charge(vbei,1.0,Vje,mje,1.0)-charge(0.0,1.0,Vje,mje,1.0))/VAR); - end - else begin - q1 = 1.0; - end - - // Webster Effect borrowed from VBIC - if((IKF > 0.0) && (IKR > 0.0)) begin - q2 = Ic0a/(Area*IKF) + Ic1ra/(Area*IKR); - end - else if((IKF > 0.0) && (IKR == 0.0)) begin - q2 = Ic0a/(Area*IKF); - end - else if((IKF == 0.0) && (IKR > 0.0)) begin - q2 = Ic1ra/(Area*IKR); - end - else begin - q2 = 0.0; - end - - qb = (q1 + sqrt((q1*q1) + 4.0 * q2))/2.0; - - Ic0 = Ic0a/qb; - Ic1r= Ic1ra/qb; - Ic1 = (Ic0 - Ic1r); - - Ib2 = diode(vbci,XCjc*Jsr,Vgr,nr,Area,Tj,Tnom)/(Br); - Ibx = diode(vbcx,(1.0-XCjc)*Jsr,Vgr,nr,Area,Tj,Tnom)/(Br); - - // Base Currents - - epsi = 1.0e-6; - Vbclin = BVceo * pow(1.0 - epsi , 1/Mc); - - mm = MM(vbci, BVceo, Mc, Vbclin, Bf, kc); - - if(mm >1.0) begin - if(kBeta > 0.0) begin - if((Bf - kBeta*Tex) > 1e-6) begin - EdBeta = (1/(Bf - kBeta*Tex) - kc*(mm - 1)) / (kc*(mm - 1) + 1); - end - else begin - EdBeta = (1e6 - kc*(mm - 1))/(kc*(mm - 1)+1); - end - end - else begin - EdBeta = (1/(Bf) - kc*(mm - 1))/(kc*(mm - 1)+1); - end - end - else begin - if(kBeta > 0.0) begin - if((Bf - kBeta*Tex) > 1e-6) begin - EdBeta = (1/(Bf - kBeta*Tex)); - end - else begin - EdBeta = (1e6 ); - end - end - else begin - EdBeta = (1/(Bf) ); - end - end - - Ib0 = Ic0a * EdBeta; - - // no Break-Down - if (BVebo>0) begin - Ib1 = Ib0 - - diode((-BVebo - vbei), Jsf, 0.0, 1.0, Area, 0.0, 0.0); - end else - Ib1 = Ib0; - - // Emitter Currents - if((Jse>0.0) && (ne>0)) - Ibdx = diode(vxe,Jse,Vgb,ne,Area,Tj,Tnom); - else - Ibdx = vxe*1e-12; - - if((Jsee>0.0) && (nee>0)) - Ibdxx = diode(vxxe,Jsee,Vgbb,nee,Area,Tj,Tnom); - else - Ibdxx = vxxe*1e-12; - - if((Jsc>0.0) && (nc>0)) - Icdx = diode(vxc,Jsc,Vgc,nc,Area,Tj,Tnom); - else - Icdx = vxc * 1e-12; - - // Dissipated Power - Ipdiss = (Ic1 * (vcei)) + (Ib1 * (vbei)) + (Ib2 * vbci) + (Ibx * vbcx); - - if (Ipdiss < 0.0) - Ipdiss = 0; - - // - // Nonlinear Part --- Charge Sources - // - - // qb2med: Base-Collector-Capacitance at medium currents - - I00=(J0*Area); - - // qb2med: Base-Collector-Capacitance at medium currents - if ((XCjc < 1.0) && (XCjc > 0.0)) begin - if ((J0<=0.0) || (Ic0<0.0)) begin - // Qbc independent of current C = Cjc - qb2med = XCjc * charge(vbci,(Cjc-Cmin),Vjc,mjc,Area) + - XCjc * Area * Cmin * vbci; - end - else begin - // C = (1-(2 Ic/I0)/(1+(Ic0/Ia00)^2))*Cjc - - xix = Ic0/I00; - - qb2med = XCjc * (1.0 - tanh( xix )) * - (charge(vbci,(Cjc-Cmin),Vjc,mjc,Area) + - (1.0-XJ0) * Area * Cmin*vbci) + - XJ0 * XCjc * Area * Cmin*vbci; - end - end - else begin - // if XCjc not within (0,1), sets extrinsic capacitance to zero - if ((J0<0.0) || (Ic0<0.0)) begin - // Qbc independent of current C = Cjc - qb2med = charge(vbci,(Cjc-Cmin),Vjc,mjc,Area) + - Area * Cmin*vbci; - end - else begin - // C = (1-(2 Ic/I0)/(1+(Ic0/Ia00)^2))*Cjc - - xix = Ic0/I00; - - qb2med = (1.0 - tanh( xix )) * - (charge(vbci,(Cjc-Cmin),Vjc,mjc,Area) + - (1.0 - XJ0)*Area * Cmin*vbci) + - XJ0*Area * Cmin*vbci; - - end - end - - // qb1: Cex - if ((XCjc < 1.0) && (XCjc > 0.0)) begin - qb1 = (1.0-XCjc) * charge(vbcx,(Cjc-Cmin),Vjc,mjc,Area) + - (1.0-XCjc) * Area * Cmin* vbcx; - end - else begin - qb1 = 0.0; - end - - qbtr = Tr * Ic1r; - qbtra = Trx * Ibx; - - // qb2: Cbc - qb2 = qb2med + qbtr; - - // Base push-out borrowed from HICUM - - if ((Jk > 0.0) && (Rci0 > 0.0)) begin - if (RJk > 0.0) begin - Vlim = Jk * Rci0 / (1.0 - Rci0/RJk); - InvVpt = (1.0 - Rci0/RJk)/(Jk*RJk); - end - else begin - Vlim = Jk * Rci0 / (1.016); - InvVpt = 0.0; - end - end - - if ((Thcs>0.0) && (Ahc>0.0) && (Jk>0.0) && (Ic0>0.0)) begin - RCIO = Rci0/Area; - AHC = Area*Ahc; - if ((Rci00.0) && (ne>0)) begin - I(ex, bii) <+ V(ex, bii)/(Rbxx/N); - I(ex, bii) <+ white_noise( (FOUR_K*TjK)/(Rbxx/N), "thermal"); - end - else begin - I(ex, bii) <+ V(ex, bii)*1e-12; - end - - if((Jsee>0.0) && (nee>0)) begin - I(exx,bii) <+ V(exx, bii)/(Rbbxx/N); - I(exx,bii) <+ white_noise( (FOUR_K*TjK)/(Rbbxx/N), "thermal"); - end - else begin - I(exx, bii) <+ V(exx, bii)*1e-12; - end - - if((Jsc>0.0) && (nc>0)) begin - I(cx, bii) <+ V(cx, bii)/(Rcxx/N); - I(cx, bii) <+ white_noise( (FOUR_K*TjK)/(Rcxx/N), "thermal"); - end - else begin - I(cx, bii) <+ V(cx, bii)*1e-12; - end - - - I(b) <+ ddt(Cpb * V(b)); - I(c) <+ ddt(Cpc * V(c)); - I(b,c) <+ ddt(Cq * V(b,c)); - - Pwr(ti) <+ -Ipdiss; - if (Rth) begin - Pwr(t,ti) <+ Temp(t,ti) / Rth; - Pwr(t,ti) <+ Cth * ddt(Temp(t,ti)); - end - else begin - Pwr(t,ti) <+ Temp(t,ti) * 1e3; - end - - // low-frequency noise - // BE Noise - if(Ib0<=0) begin - Iniix = 0; - Iniiix = 0; - end - if((Ib0+Ic1)<=0) begin - Inivx = 0; - end - else begin - if (Ab == 2) begin - Iniix = Ib0; - end - else begin - Iniix = pow(Ib0,(Ab*0.5)); - end - if (Afb == 2) begin - Iniiix = Ib0; - end - else begin - Iniiix = pow(Ib0,(Afb*0.5)); - end - if (Afe == 2) begin - Inivx = (Ib0+Ic1); - end - else begin - Inivx = pow((Ib0+Ic1),(Afe*0.5)); - end - end - - - I(nii) <+ V(nii); - I(nii) <+ ddt(V(nii)/(2.0*3.1415*Fb)); - I(nii) <+ white_noise(Area*Kb ); - I(niix) <+ V(niix); - I(niix) <+ Iniix; - I(niii) <+ V(niii); - I(niii) <+ flicker_noise(Area*Kfb, Ffeb, "Flicker noise base-emitter junction (a)"); - I(niiix) <+ V(niiix); - I(niiix) <+ Iniiix; - I(bii,ei) <+ V(nii)*V(niix); - I(bii,ei) <+ V(niii)*V(niiix); - - I(niv) <+ V(niv); - I(niv) <+ flicker_noise(Area*Kfe , Ffee, "Hooge noise of emitter resistance"); - I(nivx) <+ V(nivx); - I(nivx) <+ Inivx; -// V(e, ei) <+ V(niv)*V(nivx)*(Re/N); - I(e, ei) <+ V(niv)*V(nivx)/(Re/N); - - end - // - // end of model equations - // - -endmodule diff --git a/qucs-core/src/components/verilog/hicumL0V1p12.va b/qucs-core/src/components/verilog/hicumL0V1p12.va deleted file mode 100644 index 4d495474b7..0000000000 --- a/qucs-core/src/components/verilog/hicumL0V1p12.va +++ /dev/null @@ -1,851 +0,0 @@ -// HICUM Level_0 Version_1.12: A Verilog-A description -// (A simplified version of HICUM Level2 model for BJT) -// ## It is modified after the first version of HICUM/L0 code ## - -// Minor code related changes -// 12/06: Upper limit of FGEO is changed to infinity -// 06/06: Thermal node "tnode" set as external -// Flag FLSH introduced for controlling Self-heating calculation -// all if-else blocks marked with begin-end -// all series resistors and RTH are allowed to have a minimum value MIN_R -// 07/06: QCJMOD deleted, QJMODF introduced along with with HICJQ -// ddx() operator used with QJMOD and QJMODF wherever needed -// aj is kept at 2.4 except BE depletion charge -// Substrate transistor transfer current added. -// Gmin added to (bi,ei) and (bi,ci) branches. -// hyperbolic smoothing used in rbi computation to avoid devide-by-zero. - -// ********************************************************************************* -// 06/06: Comment on NODE COLLAPSING: -// Presently this verilog code permits a minimum of 1 milli-Ohm resistance for any -// series resistance as well as for thermal resistance RTH. If any of the resistance -// values drops below this minimum value, the corresponding nodes are shorted with -// zero voltage contribution. We want the model compilers/simulators deal this -// situation in such a manner that the corresponding node is COLLAPSED. -// We expect that the simulators should permit current contribution statement -// for any branch with resistance value more than (or equal to) 1 milli-Ohm without -// any convergence problem. In fact, we wish NOT to have to use a voltage contribution -// statement in our Verilog code, except as an indication for the model compiler/simulator -// to interprete a zero branch voltage as NODE-COLLAPSING action. -// ********************************************************************************** - - -//Default simulator: Spectre - -`ifdef insideADMS - `define P(p) (*p*) - `define PGIVEN(p) $given(p) - `define INITIAL_MODEL @(initial_model) -`else - `define P(p) - `define PGIVEN(p) p - `define INITIAL_MODEL @(initial_step) -`endif - - -//ADS -`include "constants.vams" -`include "disciplines.vams" -//`include "compact.vams" - -//Spectre -//`include "constants.h" -//`include "discipline.h" - - -`define NPN +1 -`define PNP -1 - -`define VPT_thresh 1.0e2 -`define EXPLIM 80.0 -`define INF 1.0e6 -`define TMAX 326.85 -`define TMIN -100.0 -`define MIN_R 0.001 -`define Gmin 1.0e-12 - -`define QCMODF(vj,cj0,vd,z,aj,cjf)\ - if(cj0 > 0.0) begin\ - vf = vd*(1.0-exp(-ln(aj)/z));\ - xvf = (vf-vj)/VT;\ - xvf2 = sqrt(xvf*xvf+1.921812);\ - v_j = vf-VT*(xvf+xvf2)*0.5;\ - dvj = 0.5*(xvf+xvf2)/xvf2;\ - cjf = cj0*exp(-z*ln(1-v_j/vd))*dvj+aj*cj0*(1-dvj);\ - end else begin\ - cjf = 0.0;\ - end - -// DEPLETION CHARGE CALCULATION -// Hyperbolic smoothing used; no punch-through -`define QJMODF(vj,cj0,vd,z,aj,qjf)\ - if(cj0 > 0.0) begin\ - vf = vd*(1.0-exp(-ln(aj)/z));\ - xvf = (vf-vj)/VT;\ - xvf2 = sqrt(xvf*xvf+1.921812);\ - v_j = vf-VT*(xvf+xvf2)*0.5;\ - x = 1.0-z;\ - y = 1.0-exp(x*ln(1.0-v_j/vd));\ - qjf = cj0*vd*y/x+aj*cj0*(vj-v_j);\ - end else begin\ - qjf = 0.0;\ - end - - -// Depletion Charge : with punch through -`define QJMOD(vj,cj0,vd,z,vpt,aj,qjf)\ - if(cj0 > 0.0) begin\ - zr = z/4.0;\ - vp = vpt-vd;\ - vf = vd*(1.0-exp(-ln(aj)/z));\ - cmax = aj*cj0;\ - cr = cj0*exp((z-zr)*ln(vd/vpt));\ - a = VT;\ - ve = (vf-vj)/a;\ - if (ve <= `EXPLIM) begin\ - ex1 = exp(ve);\ - ee1 = 1.0+ex1;\ - vj1 = vf-a*ln(ee1);\ - end else begin\ - vj1 = vj;\ - end\ - a = 0.1*vp+4.0*VT;\ - vr = (vp+vj1)/a;\ - if (vr <= `EXPLIM) begin\ - ex1 = exp(vr);\ - ee1 = 1.0+ex1;\ - vj2 = -vp+a*ln(ee1);\ - end else begin\ - vj2 = vj1;\ - end\ - vj4 = vj-vj1;\ - ez = 1.0-z;\ - ezr = 1.0-zr;\ - vdj1 = ln(1.0-vj1/vd);\ - vdj2 = ln(1.0-vj2/vd);\ - qj1 = cj0*(1.0-exp(vdj2*ez))/ez;\ - qj2 = cr*(1.0-exp(vdj1*ezr))/ezr;\ - qj3 = cr*(1.0-exp(vdj2*ezr))/ezr;\ - qjf = (qj1+qj2-qj3)*vd+cmax*vj4;\ - end else begin\ - qjf = 0.0;\ - end - - -// DEPLETION CHARGE CALCULATION SELECTOR: -// Dependent on junction punch-through voltage -// Important for collector related junctions -`define HICJQ(vj,cj0,vd,z,vpt,qjf)\ - if(vpt < `VPT_thresh) begin\ - `QJMOD(vj,cj0,vd,z,vpt,2.4,qjf)\ - end else begin\ - `QJMODF(vj,cj0,vd,z,2.4,qjf)\ - end - -//Temperature dependence of depletion capacitance parameters -`define TMPHICJ(cj0,vd,z,vg,cj0_t,vd_t)\ - arg = 0.5*vd/VT0;\ - vdj0 = 2*VT0*ln(exp(arg)-exp(-arg));\ - vdjt = vdj0*qtt0+vg*(1-qtt0)-mg*VT*ln_qtt0;\ - vd_t = vdjt+2*VT*ln(0.5*(1+sqrt(1+4*exp(-vdjt/VT))));\ - cj0_t = cj0*exp(z*ln(vd/vd_t)); - - -//Limiting exponential -`define LIN_EXP(le, arg)\ - if(arg > 80) begin\ - le = (1 + ((arg) - 80));\ - arg = 80;\ - end else begin\ - le=1;\ - end\ - le = le*limexp(arg); - -// IDEAL DIODE (WITHOUT CAPACITANCE): -// conductance not calculated -// INPUT: -// IS, IST : saturation currents (model parameter related) -// UM1 : ideality factor -// U : branch voltage -// IMPLICIT INPUT: -// VT : thermal voltage -// OUTPUT: -// Iz : diode current -`define HICDIO(IS,IST,UM1,U,Iz)\ - DIOY = U/(UM1*VT);\ - if (IS > 0.0) begin\ - if (DIOY > 80) begin\ - le = (1 + ((DIOY) - 80));\ - DIOY = 80;\ - end else begin\ - le = 1;\ - end\ - le = le*limexp(DIOY);\ - Iz = IST*(le-1.0);\ - if(DIOY <= -14.0) begin\ - Iz = -IST;\ - end\ - end else begin\ - Iz = 0.0;\ - end - - -module hic0_full (c,b,e,s,tnode); - - -//Node definitions - - inout c,b,e,s,tnode; - electrical c `P(info="external collector node"); - electrical b `P(info="external base node"); - electrical e `P(info="external emitter node"); - electrical s `P(info="external substrate node"); - electrical ci `P(info="internal collector node"); - electrical bi `P(info="internal base node"); - electrical ei `P(info="internal emitter node"); - electrical tnode `P(info="local temperature rise node"); - - - //Branch definitions - branch (ci,c) br_cic_i; - branch (ci,c) br_cic_v; - branch (ei,e) br_eie_i; - branch (ei,e) br_eie_v; - branch (bi,ei) br_biei; - branch (bi,ci) br_bici; - branch (ci,ei) br_ciei; - branch (b,bi) br_bbi_i; - branch (b,bi) br_bbi_v; - branch (b,e) br_be; - branch (b,ci) br_bci; - branch (b,s) br_bs; - branch (s,ci) br_sci; - branch (tnode ) br_sht; - -// -// Parameter initialization with default values - -// Collector current - parameter real is = 1.0e-16 from [0:1] `P(spice:name="is" info="(Modified) saturation current" m:factor="yes" unit="A"); - parameter real mcf = 1.00 from (0:10] `P(spice:name="mcf" info="Non-ideality coefficient of forward collector current"); - parameter real mcr = 1.00 from (0:10] `P(spice:name="mcr" info="Non-ideality coefficient of reverse collector current"); - parameter real vef = `INF from (0:`INF] `P(spice:name="vef" info="forward Early voltage (normalization volt.)" unit="V" default:value="infinity"); - parameter real iqf = `INF from (0:`INF] `P(spice:name="iqf" info="forward d.c. high-injection roll-off current" unit="A" m:factor="yes" default:value="infinity"); - parameter real iqr = `INF from (0:`INF] `P(spice:name="iqr" info="inverse d.c. high-injection roll-off current" unit="A" m:factor="yes" default:value="infinity"); - parameter real iqfh = `INF from (0:`INF] `P(spice:name="iqfh" info="high-injection correction current" unit="A" m:factor="yes"); - parameter real tfh = `INF from (0:`INF] `P(spice:name="tfh" info="high-injection correction factor" test:value="2e-9" m:factor="yes"); - -// Base current - parameter real ibes = 1e-18 from [0:1] `P(spice:name="ibes" info="BE saturation current" unit="A" m:factor="yes"); - parameter real mbe = 1.0 from (0:10] `P(spice:name="mbe" info="BE non-ideality factor"); - parameter real ires = 0.0 from [0:1] `P(spice:name="ires" info="BE recombination saturation current" test:value="1e-16" unit="A" m:factor="yes"); - parameter real mre = 2.0 from (0:10] `P(spice:name="mre" info="BE recombination non-ideality factor"); - parameter real ibcs = 0.0 from [0:1] `P(spice:name="ibcs" info="BC saturation current" test:value="1e-16" unit="A" m:factor="yes"); - parameter real mbc = 1.0 from (0:10] `P(spice:name="mbc" info="BC non-ideality factor"); - -// BE depletion cap - parameter real cje0 = 1.0e-20 from (0:`INF) `P(spice:name="cje0" info="Zero-bias BE depletion capacitance" unit="F" test:value="2e-14" m:factor="yes"); - parameter real vde = 0.9 from (0:10] `P(spice:name="vde" info="BE built-in voltage" unit="V"); - parameter real ze = 0.5 from (0:1] `P(spice:name="ze" info="BE exponent factor"); - parameter real aje = 2.5 from [1:`INF) `P(spice:name="aje" info="Ratio of maximum to zero-bias value"); - -// Transit time - parameter real t0 = 0.0 from [0:`INF) `P(spice:name="t0" info="low current transit time at Vbici=0" test:value="5e-12" unit="s"); - parameter real dt0h = 0.0 from [0:`INF) `P(spice:name="dt0h" info="Base width modulation contribution" test:value="2e-12" unit="s"); - parameter real tbvl = 0.0 from [0:`INF) `P(spice:name="tbvl" info="SCR width modulation contribution" test:value="4e-12" unit="s"); - parameter real tef0 = 0.0 from [0:`INF) `P(spice:name="tef0" info="Storage time in neutral emitter" test:value="1e-12" unit="s"); - parameter real gte = 1.0 from (0:10] `P(spice:name="gte" info="Exponent factor for emitter transit time"); - parameter real thcs = 0.0 from [0:`INF) `P(spice:name="thcs" info="Saturation time at high current densities" test:value="3e-11" unit="s"); - parameter real ahc = 0.1 from (0:10] `P(spice:name="ahc" info="Smoothing factor for current dependence"); - parameter real tr = 0.0 from [0:`INF) `P(spice:name="tr" info="Storage time at inverse operation" unit="s"); - -// Critical current - parameter real rci0 = 150 from (0:`INF) `P(spice:name="rci0" info="Low-field collector resistance under emitter" test:value="50" unit="Ohm" m:inverse_factor="yes"); - parameter real vlim = 0.5 from (0:10] `P(spice:name="vlim" info="Voltage dividing ohmic and satur.region" unit="V"); - parameter real vpt = 100 from (0:100] `P(spice:name="vpt" info="Punch-through voltage" test:value="10" unit="V" default="infinity"); - parameter real vces = 0.1 from [0:1] `P(spice:name="vces" info="Saturation voltage" unit="V"); - -// BC depletion cap intern - parameter real cjci0 = 1.0e-20 from (0:`INF) `P(spice:name="cjci0" info="Total zero-bias BC depletion capacitance" test:value="1e-15" unit="F" m:factor="yes"); - parameter real vdci = 0.7 from (0:10] `P(spice:name="vdci" info="BC built-in voltage" test:value="0.7" unit="V"); - parameter real zci = 0.333 from (0:1] `P(spice:name="zci" info="BC exponent factor" test:value="0.4"); - parameter real vptci = 100 from (0:100] `P(spice:name="vptci" info="Punch-through voltage of BC junction" test:value="50" unit="V"); - -// BC depletion cap extern - parameter real cjcx0 = 1.0e-20 from [0:`INF) `P(spice:name="cjcx0" info="Zero-bias external BC depletion capacitance" unit="F" test:value="1e-15" m:factor="yes"); - parameter real vdcx = 0.7 from (0:10] `P(spice:name="vdcx" info="External BC built-in voltage" unit="V"); - parameter real zcx = 0.333 from (0:1] `P(spice:name="zcx" info="External BC exponent factor"); - parameter real vptcx = 100 from (0:100] `P(spice:name="vptcx" info="Punch-through voltage" unit="V" test:value="5.0" default="infinity"); - parameter real fbc = 1.0 from [0:1] `P(spice:name="fbc" info="Split factor = Cjci0/Cjc0" test:value="0.5"); - -// Base resistance - parameter real rbi0 = 0.0 from [0:`INF) `P(spice:name="rbi0" info="Internal base resistance at zero-bias" test:value="100" unit="Ohm" m:inverse_factor="yes"); - parameter real vr0e = 2.5 from (0:`INF] `P(spice:name="vr0e" info="forward Early voltage (normalization volt.)" unit="V"); - parameter real vr0c = `INF from (0:`INF] `P(spice:name="vr0c" info="forward Early voltage (normalization volt.)" unit="V" default="infinity" test:value="25.0"); - parameter real fgeo = 0.656 from [0:`INF] `P(spice:name="fgeo" info="Geometry factor" test:value="0.73"); - -// Series resistances - parameter real rbx = 0.0 from [0:`INF) `P(spice:name="rbx" info="External base series resistance" test:value="8.8" unit="Ohm" m:inverse_factor="yes"); - parameter real rcx = 0.0 from [0:`INF) `P(spice:name="rcx" info="Emitter series resistance" test:value="12.5" unit="Ohm" m:inverse_factor="yes"); - parameter real re = 0.0 from [0:`INF) `P(spice:name="re" info="External collector series resistance" test:value="9.16" unit="Ohm" m:inverse_factor="yes"); - -// Substrate transfer current, diode current and cap - parameter real itss = 0.0 from [0:1.0] `P(spice:name="itss" info="Substrate transistor transfer saturation current" unit="A" test:value="1e-17" m:factor="yes"); - parameter real msf = 1.0 from (0:10] `P(spice:name="msf" info="Substrate transistor transfer current non-ideality factor"); - parameter real iscs = 0.0 from [0:1.0] `P(spice:name="iscs" info="SC saturation current" unit="A" test:value="1e-17" m:factor="yes"); - parameter real msc = 1.0 from (0:10] `P(spice:name="msc" info="SC non-ideality factor"); - parameter real cjs0 = 1.0e-20 from [0:`INF) `P(spice:name="cjs0" info="Zero-bias SC depletion capacitance" unit="F" test:value="1e-15" m:factor="yes"); - parameter real vds = 0.3 from (0:10] `P(spice:name="vds" info="SC built-in voltage" unit="V"); - parameter real zs = 0.3 from (0:1] `P(spice:name="zs" info="External SC exponent factor"); - parameter real vpts = 100 from (0:100] `P(spice:name="vpts" info="SC punch-through voltage" unit="V" test:value="5.0" default="infinity"); - -// Parasitic caps - parameter real cbcpar = 0.0 from [0:`INF) `P(spice:name="cbcpar" info="Collector-base isolation (overlap) capacitance" unit="F" m:factor="yes" test:value="1e-15"); - parameter real cbepar = 0.0 from [0:`INF) `P(spice:name="cbepar" info="Emitter-base oxide capacitance" unit="F" m:factor="yes" test:value="2e-15"); - -// BC avalanche current - parameter real eavl = 0.0 from [0:inf) `P(spice:name="eavl" info="Exponent factor" test:value="1e-14"); - parameter real kavl = 0.0 from [0:`INF) `P(spice:name="kavl" info="Prefactor" test:value="1.19"); - -// Flicker noise - parameter real kf = 0.0 from [0:`INF) `P(spice:name="kf" info="flicker noise coefficient" unit="M^(1-AF)"); - parameter real af = 2.0 from (0:10] `P(spice:name="af" info="flicker noise exponent factor"); - -// Temperature dependance - parameter real vgb = 1.2 from (0:10] `P(spice:name="vgb" info="Bandgap-voltage" unit="V" test:value="1.17"); - parameter real vge = 1.17 from (0:10] `P(spice:name="vge" info="Effective emitter bandgap-voltage" unit="V" test:value="1.07"); - parameter real vgc = 1.17 from (0:10] `P(spice:name="vgc" info="Effective collector bandgap-voltage" unit="V" test:value="1.14"); - parameter real vgs = 1.17 from (0:10] `P(spice:name="vgs" info="Effective substrate bandgap-voltage" unit="V" test:value="1.17"); - parameter real f1vg =-1.02377e-4 `P(spice:name="f1vg" info="Coefficient K1 in T-dependent bandgap equation" unit="V/K"); - parameter real f2vg = 4.3215e-4 `P(spice:name="f2vg" info="Coefficient K2 in T-dependent bandgap equation" unit="V/K"); - parameter real alt0 = 0.0 `P(spice:name="alt0" info="Frist-order TC of tf0" unit="1/K"); - parameter real kt0 = 0.0 `P(spice:name="kt0" info="Second-order TC of tf0" unit="1/K^2"); - parameter real zetact = 3.0 `P(spice:name="zetact" info="Exponent coefficient in transfer current temperature dependence" test:value="3.5"); - parameter real zetabet = 3.5 `P(spice:name="zetabet" info="Exponent coefficient in BE junction current temperature dependence" test:value="4.0"); - parameter real zetaci = 0.0 `P(spice:name="zetaci" info="TC of epi-collector diffusivity" test:value="1.6"); - parameter real alvs = 0.0 `P(spice:name="alvs" info="Relative TC of satur.drift velocity" unit="1/K" test:value="1e-3"); - parameter real alces = 0.0 `P(spice:name="alces" info="Relative TC of vces" unit="1/K" test:value="4e-4"); - parameter real zetarbi = 0.0 `P(spice:name="zetarbi" info="TC of internal base resistance" test:value="0.6"); - parameter real zetarbx = 0.0 `P(spice:name="zetarbx" info="TC of external base resistance" test:value="0.2"); - parameter real zetarcx = 0.0 `P(spice:name="zetarcx" info="TC of external collector resistance" test:value="0.2"); - parameter real zetare = 0.0 `P(spice:name="zetare" info="TC of emitter resistances"); - parameter real alkav = 0.0 `P(spice:name="alkav" info="TC of avalanche prefactor" unit="1/K"); - parameter real aleav = 0.0 `P(spice:name="aleav" info="TC of avalanche exponential factor" unit="1/K"); - -// Self-heating - parameter integer flsh = 0 from [0:2] `P(spice:name="flsh" info="Flag for self-heating calculation" test:value="2"); - parameter real rth = 0.0 from [0:`INF) `P(spice:name="rth" info="Thermal resistance" test:value="200.0" unit="K/W" m:inverse_factor="yes"); - parameter real cth = 0.0 from [0:`INF) `P(spice:name="cth" info="Thermal capacitance" test:value="0.1" unit="Ws/K" m:factor="yes"); - -// Transistor type - parameter integer npn = 1 from [0:1] `P(spice:isflag="yes" info="model type flag for npn" ); - parameter integer pnp = 0 from [0:1] `P(info="model type flag for pnp" ); - -//Circuit simulator specific parameters - parameter real tnom = 27 `P(spice:name="tnom" info="Temperature for which parameters are valid" unit="C"); - parameter real dt = 0.0 `P(spice:name="dt" type="instance" info="Temperature change for particular transistor" unit="K"); - - -// Declaration of the variables: begin - - real HICUMtype `P(spice:name="type" info="Device type from npn or pnp flags" unit="no" ask="yes"); - - // QCJMOD - real cj0,vd,z,aj; - real zr,vp; - real cmax,cr,ve; - real ee1,ez,ezr,vdj1,vdj2,ex1,vr,vj1,vj2,vj4; - real qj1,qj2,qj3,qjf; - - - //Cjfun *** VT, removed: BA - real cj1,cj2,cj3,cjf; - - - //cjtfun *** tnom,VT,mg,VT0, removed: BA - real vg; - real vdj0,vdjt,cj0_t,vd_t,aj_t; - - - // temperature and drift - real VT,Tamb,Tdev,Tnom,dT,qtt0,ln_qtt0; - real vde_t,vdci_t,vdcx_t,vds_t; - real is_t,ires_t,ibes_t,ibcs_t; - real itss_t,iscs_t,cje0_t,cjci0_t,cjcx0_t; - real cjs0_t,rci0_t,vlim_t; - real vces_t,thcs_t,tef0_t,rbi0_t; - real rbx_t,rcx_t,re_t,t0_t,eavl_t,kavl_t; - real aje_t; - - // bc charge and cap - real qjci `P(ask="yes" info="B-C internal junction charge" unit="C"); - real qjcx,qjcii,cjcii,qjcxi,qjciii; //cjcx - real cjci0_t_ii,cjcx0_t_ii,cjcx0_t_i,v_j; - - // be junction - real qjei `P(ask="yes" info="B-E internal junction charge" unit="C"); - real cjei `P(ask="yes" info="B-E internal junction capacitance" unit="F"); - real vf,vj,x,y,e1,e2; - - // transfer and internal base current - real cc,qj_2,facl; - real tf0,ickf,ickr,itfi,itri,qm; - real qpt,itf,itr; - real it `P(ask="yes" info="Transfer Current" unit="A"); - real ibe,ire,ibi; - real itfl,itrl,al,s3l,wl,d_qfh; - - // be diffusion charge - real qf,qf0,dqfh,dqef; - real dtef,dtfh,tf,ick; - real vc,vceff,s3,w,a,tww; - - // bc diffusion charge - real qr; - - // avalanche current source - real v_bord,a_iavl,lncc; - - // base resistance - real rb,eta,rbi,qje,Qz_nom,fQz; - - // substrate transistor, diode and cap - real qjs,HSa,HSb,HSI_Tsu,HSUM; - - // self heating - real pterm; - - // new for temperature dependence - real mg,zetabci,zetasct,zetatef,avs; - real k1,k2,vgbe,vgbc,vgsc,dvg; - real xvf,xvf2,dvj,uvc,VT0; - - // noise - real flicker_Pwr,fourkt,twoq; - - // LIN_EXP - real le,arg,le1,arg1,le2,arg2; - - //HICDIO - real IS,IST,UM1,U,Iz,DIOY; - - // branch voltages - real Vbci,Vbici,Vbiei,Vciei,Vsci,Veie,Vbbi,Vcic,Vbe,Vrth; - - //Output to be seen - real ijbc `P(ask="yes" info="Base-collector diode current" unit="A"); - real iavl `P(ask="yes" info="Avalanche current" unit="A"); - real ijsc `P(ask="yes" info="Substrate-collector diode current" unit="A"); - real Ieei `P(ask="yes" info="Current through external to internal emitter node" unit="A"); - real Icci `P(ask="yes" info="Current through external to internal collector node" unit="A"); - real Ibbi `P(ask="yes" info="Current through external to internal base node" unit="A"); - real Ibici `P(ask="yes" info="Base-collector diode current minus the avalanche current" unit="A"); - real ijbe `P(ask="yes" info="Base-emitter diode current" unit="A"); - - real Qbci,Qbe,Qbici,Qbiei; -//Declaration of the variables: end - - -// -//======================== calculation of the transistor =================== -// - -analog begin - -// assign voltages with regard to transistor type - - `INITIAL_MODEL - begin - if (`PGIVEN(npn)) - HICUMtype = `NPN; - else if (`PGIVEN(pnp)) - HICUMtype = `PNP; - else - HICUMtype = `NPN; - end - - Vbci = HICUMtype*V(br_bci); - Vbici = HICUMtype*V(br_bici); - Vbiei = HICUMtype*V(br_biei); - Vciei = HICUMtype*V(br_ciei); - Vsci = HICUMtype*V(br_sci); - Veie = V(br_eie_v); - Vcic = V(br_cic_v); - Vbbi = V(br_bbi_v); - Vbe = HICUMtype*V(br_be); - Vrth = V(br_sht); - - - -// -// temperature and resulting parameter drift -// - - Tnom = tnom+273.15; - Tamb = $temperature; - Tdev = Tamb+dt+Vrth; - -// Limit temperature to avoid FPE's in equations - if(Tdev < `TMIN + 273.15) begin - Tdev = `TMIN + 273.15; - end else begin - if (Tdev > `TMAX + 273.15) begin - Tdev = `TMAX + 273.15; - end - end - - VT0 = `P_K*Tnom /`P_Q; - VT = `P_K*Tdev /`P_Q; - dT = Tdev-Tnom; - qtt0 = Tdev/Tnom; - ln_qtt0 = ln(qtt0); - k1 = f1vg*Tnom; - k2 = f2vg*Tnom+k1*ln(Tnom); - avs = alvs*Tnom; - vgbe = (vgb+vge)/2; - vgbc = (vgb+vgc)/2; - vgsc = (vgs+vgc)/2; - mg = 3-`P_Q*f1vg/`P_K; - zetabci = mg+1-zetaci; - zetasct = mg-1.5; //+1-m_upS with m_upS=2.5 - is_t = is*exp(zetact*ln_qtt0+vgb/VT*(qtt0-1)); - ibes_t = ibes*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); - ires_t = ires*exp(0.5*mg*ln_qtt0+0.5*vgbe/VT*(qtt0-1)); - ibcs_t = ibcs*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); - itss_t = itss*exp(zetasct*ln_qtt0+vgc/VT*(qtt0-1)); - iscs_t = iscs*exp(zetasct*ln_qtt0+vgs/VT*(qtt0-1)); - `TMPHICJ(cje0,vde,ze,vgbe,cje0_t,vde_t) - aje_t = aje*vde_t/vde; - `TMPHICJ(cjci0,vdci,zci,vgbc,cjci0_t,vdci_t) - `TMPHICJ(cjcx0,vdcx,zcx,vgbc,cjcx0_t,vdcx_t) - `TMPHICJ(cjs0,vds,zs,vgsc,cjs0_t,vds_t) - rci0_t = rci0*exp(zetaci*ln_qtt0); - vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); - vces_t = vces*(1+alces*dT); - t0_t = t0*(1+alt0*dT+kt0*dT*dT); - thcs_t = thcs*exp((zetaci-1)*ln_qtt0); - zetatef = zetabet-zetact-0.5; - dvg = vgb-vge; - tef0_t = tef0*exp(zetatef*ln_qtt0-dvg/VT*(qtt0-1)); - rbx_t = rbx*exp(zetarbx*ln_qtt0); - rcx_t = rcx*exp(zetarcx*ln_qtt0); - rbi0_t = rbi0*exp(zetarbi*ln_qtt0); - re_t = re*exp(zetare*ln_qtt0); - eavl_t = eavl*exp(aleav*dT); - kavl_t = kavl*exp(alkav*dT); - - -// -// Calculation of intrinsic transistor elements -// - -// BC charge and cap (internal and external) - -// The cjcx0 value is used to switch between one (cjcx0=0) and two bc parameter sets -// 1. For one parameter set only the internal bc set is partitioned by fbc -// 2. For two independent sets only the external set is partitioned by fbc - - if (cjcx0_t==0) begin - cjci0_t_ii = cjci0_t*fbc; // zero bias internal portion - qjcxi = 0; - cjcx0_t_i = cjci0_t*(1-fbc); // zero bias external portion - `HICJQ(Vbci,cjcx0_t_i,vdci_t,zci,vptci,qjcx) - end else begin - cjci0_t_ii = cjci0_t; // zero bias internal portion - cjcx0_t_ii = cjcx0_t*fbc; - `HICJQ(Vbici,cjcx0_t_ii,vdcx_t,zcx,vptcx,qjcxi) - cjcx0_t_i = cjcx0_t*(1-fbc); // zero bias external portion - `HICJQ(Vbci,cjcx0_t_i,vdcx_t,zcx,vptcx,qjcx) - end - `HICJQ(Vbici,cjci0_t_ii,vdci_t,zci,vptci,qjci) - qjcii = qjci+qjcxi; - -//Internal bc cap without punch through for cc - - //`HICJQ(Vbici,cjci0_t_ii,vdci_t,zci,100,qjciii) - `QCMODF(Vbici,cjci0_t_ii,vdci_t,zci,2.4,cjcii) - //cjcii = ddx(qjciii,V(bi)); - -//Internal be cap and charge - - `QJMODF(Vbiei,cje0_t,vde_t,ze,aje_t,qjei) - cjei = ddx(qjei,V(bi)); - -// Critical current: ick - vc = Vciei-vces_t; - uvc = vc/VT-1; - vceff = VT*(1+0.5*(uvc+sqrt(uvc*uvc+1.921812))); - x = (vceff-vlim_t)/vpt; - ick = vceff*(1+0.5*(x+sqrt(x*x+1e-3)))/rci0_t/sqrt(1+vceff*vceff/vlim_t/vlim_t); - -// Transfer current - -// Normalized BC cap and carge - cc = cjci0_t_ii/cjcii; - qjci = qjci/cjci0_t_ii; - qj_2 = (1+qjci/vef)/2; - -// Minority charge transit time - tf0 = t0_t+dt0h*(cc-1)+tbvl*(1/cc-1); - -// DC critical currents - ickf = iqf; - ickr = iqr; - -// Ideal transfer currents - arg1 = Vbiei/(mcf*VT); - `LIN_EXP(le1,arg1) - itfi=is_t*le1; - - arg2 = Vbici/(mcr*VT); - `LIN_EXP(le2,arg2) - itri=is_t*le2; - - -// Normalized minority charge - qm = (itfi/ickf+itri/ickr); - -// Normalized total hole charge - qpt = qj_2+sqrt((qj_2)*(qj_2)+qm); - if (qpt<=1e-20) begin - qpt=1e-20; - end - -// Low transfer current - itfl = itfi/qpt; - itrl = itri/qpt; - -// Normalized injection width with low transfer current -// and normalized charge component - if (itfl<=1e-20) begin - itfl = 1e-20; - end - al = 1-ick/itfl; - s3l = sqrt(al*al+ahc); - wl = (al+s3l)/(1+sqrt(1+ahc)); - d_qfh = (wl*wl+tfh*itfl/ick)*itfl/iqfh; - -// Transfer current - facl = 1/(1+d_qfh/qpt); - itf = itfl*facl; - itr = itrl*facl; - if (itf<=1e-20) begin - itf = 1e-20; - end - it = itf-itr; - -// BE diffusion charge - -// Calculation of low-current portion - qf0 = tf0*itf; - -// Current dependent component - a = 1-ick/itf; - s3 = sqrt(a*a+ahc); - w = (a+s3)/(1+sqrt(1+ahc)); - tww = thcs_t*w*w; - dqfh = tww*itf; - dtfh = tww*(1+2*ick/itf/s3); - -// Emitter component - dtef = tef0_t*exp(gte*ln(itf/ick)); - dqef = dtef*itf/(gte+1.0); - -// Total minority charge and transit time - qf = qf0+dqef+dqfh; - tf = tf0+dtfh+dtef; - -// BC diffusion charge - qr = tr*itr; - -// Internal base current - -// BE diode - `HICDIO(ibes,ibes_t,mbe,Vbiei,ibe) - `HICDIO(ires,ires_t,mre,Vbiei,ire) - ijbe = ibe+ire; - -// BC diode - `HICDIO(ibcs,ibcs_t,mbc,Vbici,ijbc) - -// Total base current - ibi = ijbe+ijbc; - -// Avalanche current - - if (Vbici < 0) begin : HICAVL - v_bord = eavl_t*vdci_t; - if (vdci_t-Vbici>v_bord) begin - a_iavl = kavl_t/vdci_t*exp(-cc); - iavl = itf*a_iavl*(v_bord+(1+cc)*(vdci_t-Vbici-v_bord)); - end else begin - lncc = ln(1/cc); - iavl = kavl_t*itf*exp(-1/zci*lncc-eavl_t*exp((1/zci-1)*lncc)); - end - end else begin - iavl = 0; - end - -// -// Additional elements for external transistor -// - -// Base resistance - if(rbi0_t > 0.0) begin : HICRBI - // Conductivity modulation with hyperbolic smoothing - qje = qjei/cje0_t; - Qz_nom = 1+qje/vr0e+qjci/vr0c+itf/ickf+itr/ickr; - fQz = 0.5*(Qz_nom+sqrt(Qz_nom*Qz_nom+0.01));; - rbi = rbi0_t/fQz; - // Emitter current crowding - if (ibi > 0.0) begin - eta = fgeo*rbi*ibi/VT; - if (eta < 1e-6) begin - rbi = rbi*(1-0.5*eta); - end else begin - rbi = rbi*ln(eta+1)/eta; - end - end - end else begin - rbi = 0.0; - end - // Total base resistance - rb = rbi+rbx_t; - -// Parasitic substrate transistor transfer current - if(itss > 0.0) begin : Sub_Transfer - HSUM = msf*VT; - HSa = limexp(Vbci/HSUM); - HSb = limexp(Vsci/HSUM); - HSI_Tsu = itss_t*(HSa-HSb); - end else begin - HSI_Tsu = 0.0; - end - -// Substrate diode and cap and charge - - `HICDIO(iscs,iscs_t,msc,Vsci,ijsc) - - `HICJQ(Vsci,cjs0_t,vds_t,zs,vpts,qjs) - -// Self heating - - if (flsh == 1 && rth >= `MIN_R) begin - pterm = it*Vciei+iavl*(vdci_t-Vbici); - end else if (flsh == 2 && rth >= `MIN_R) begin - pterm = Vciei*it + (vdci_t-Vbici)*iavl + ijbe*Vbiei + ijbc*Vbici + ijsc*Vsci; - if (rb >= `MIN_R) begin - pterm = pterm + Vbbi*Vbbi/rb; - end - if (re_t >= `MIN_R) begin - pterm = pterm + Veie*Veie/re_t; - end - if (rcx_t >= `MIN_R) begin - pterm = pterm + Vcic*Vcic/rcx_t; - end - end - -// -// Compute branch sources -// - - Ibici = ijbc - iavl; - - Qbci = cbcpar*Vbci; - Qbe = cbepar*Vbe; - Qbici = qjcii+qr; - Qbiei = qjei+qf; - - ijsc = HICUMtype*ijsc; - qjs = HICUMtype*qjs; - qjcx = HICUMtype*qjcx; - Qbci = HICUMtype*Qbci; - Qbe = HICUMtype*Qbe; - - Ibici = HICUMtype*Ibici; - Qbici = HICUMtype*Qbici; - ijbe = HICUMtype*ijbe; - Qbiei = HICUMtype*Qbiei; - it = HICUMtype*it; - -// -// Define branch sources -// - I(br_biei) <+ `Gmin*V(br_biei); - I(br_bici) <+ `Gmin*V(br_bici); - - I(br_bs) <+ HSI_Tsu; - I(br_sci) <+ ijsc `P(spectre:gmin="add" spectre:pwl_passive="1e10"); - I(br_sci) <+ ddt(qjs); - I(br_bci) <+ ddt(qjcx); - I(br_bci) <+ ddt(Qbci); - I(br_be) <+ ddt(Qbe); - if (re >= `MIN_R) begin - I(br_eie_i) <+ Veie/re_t `P(spectre:gmin="add"); - end else begin - //V(br_eie_v) <+ 0.0; - I(br_eie_i) <+ V(br_eie_i)/1e-6; - end - if (rcx >= `MIN_R) begin - I(br_cic_i) <+ Vcic/rcx_t `P(spectre:gmin="add"); - end else begin - //V(br_cic_v) <+ 0.0; - I(br_cic_i) <+ V(br_cic_i)/1e-6; - end - if (rbi0 >= `MIN_R || rbx >= `MIN_R) begin - I(br_bbi_i) <+ Vbbi/rb `P(spectre:gmin="add"); - end else begin - //V(br_bbi_v) <+ 0.0; - I(br_bbi_i) <+ V(br_bbi_i)/1e-6; - end - I(br_bici) <+ Ibici `P(spectre:gmin="add" spectre:pwl_sat_current="IMAX" spectre:pwl_sat_cond="imax/0.025" spectre:pwl_rev_current="imax" spectre:pwl_rev_cond="IMAX/0.025"); - I(br_bici) <+ ddt(Qbici); - I(br_biei) <+ ijbe `P(spectre:gmin="add" spectre:pwl_fwd_current="IBEIS*exp(25.0)" spectre:pwl_fwd_node="bi" spectre:pwl_fwd_cond="IBEIS*exp(25.0)/0.025" spectre:pwl_sat_current="IMAX" spectre:pwl_sat_cond="IMAX/0.025" spectre:pwl_passive="1e10"); - I(br_biei) <+ ddt(Qbiei); - I(br_ciei) <+ it `P(spectre:pwl_fwd_current="IS*exp(25.0)" spectre:pwl_fwd_node="bi" spectre:pwl_fwd_cond="IS*exp(25.0)/0.025" spectre:pwl_rev_current="IMAX" spectre:pwl_rev_cond="IMAX/0.025" spectre:pwl_passive="1e10"); - - // Following code is an intermediate solution: - // ****************************************** - if(flsh == 0 || rth < `MIN_R) begin - I(br_sht) <+ Vrth/`MIN_R; - end else begin - I(br_sht) <+ Vrth/rth-pterm `P(spectre:gmin="add"); - I(br_sht) <+ ddt(cth*Vrth); - end - // ****************************************** - // For simulators having no problem with V(br_sht) <+ 0.0 - // with external thermal node, follwing code may be used. - // This external thermal node should remain accessible. - // ******************************************** - //if(flsh == 0 || rth < `MIN_R) begin - // V(br_sht) <+ 0.0; - //end else begin - // I(br_sht) <+ Vrth/rth-pterm `P(spectre:gmin="add"); - // I(br_sht) <+ ddt(cth*Vrth); - //end - // ******************************************** - -// Noise sources -// Thermal noise - fourkt = 4.0 * `P_K * Tdev; - if(rbx >= `MIN_R || rbi0 >= `MIN_R) begin - I(br_bbi_i) <+ white_noise(fourkt/rb); - end - if(rcx >= `MIN_R) begin - I(br_cic_i) <+ white_noise(fourkt/rcx_t); - end - if(re >= `MIN_R) begin - I(br_eie_i) <+ white_noise(fourkt/re_t); - end - -// Shot noise - twoq = 2.0 * `P_Q; - I(br_biei) <+ white_noise(twoq*ijbe); - I(br_ciei) <+ white_noise(twoq*it); - -// Flicker noise - flicker_Pwr = kf*pow(ijbe,af); - I(br_biei) <+ flicker_noise(flicker_Pwr,1.0); - -end // analog -endmodule diff --git a/qucs-core/src/components/verilog/hicumL0V1p2.va b/qucs-core/src/components/verilog/hicumL0V1p2.va deleted file mode 100644 index c5c409e1a6..0000000000 --- a/qucs-core/src/components/verilog/hicumL0V1p2.va +++ /dev/null @@ -1,1016 +0,0 @@ - -//**************** COPYRIGHT (Originator: Michael Schroter)**************** -// No part of this code may be reproduced or used in any form without -// written permission from the originator - -// HICUM Level_0 Version_1.2: A Verilog-A description -// (A simplified version of HICUM Level2 model for BJT) -// ## It is modified after the first version of HICUM/L0 code ## - -// Minor code related changes -// 01/09: Introduction of temporary dc capacitance variable CJE_DC to call the procedure with -// the AC and DC parameter set and assign an AC and DC result to its output variables -// 01/09: Ranges of ZE & ZEDC have been modified to a new range (0:1) from the old range (0:1] -// 12/08: gmin declaration by L. Lemaitre. -// 12/08: rth has been used instead of rth_t (dynamic variable) in the corresponding if statement -// 12/08: Macro `QJMODF has been used to compute AC as well as DC charge with corresponding AC and DC variables respectively -// 11/08: Conditional statement for calculating normalized minority charge to avoid overflow at TFH=0 -// 11/08: Range of AHQ has been modified to a new range [-0.9:10] from the old range [0:10] -// 03/08: Quick Fix: Default value of TFH has been changed from infinity to zero and modification has been done to -// the default value limits to [0, inf) to include zero -// 12/06: Upper limit of FGEO is changed to infinity -// 06/06: Thermal node "tnode" set as external -// Flag FLSH introduced for controlling Self-heating calculation -// all if-else blocks marked with begin-end -// all series resistors and RTH are allowed to have a minimum value MIN_R -// 07/06: QCJMOD deleted, QJMODF introduced along with with HICJQ -// ddx() operator used with QJMOD and QJMODF wherever needed -// aj is kept at 2.4 except BE depletion charge -// Substrate transistor transfer current added. -// Gmin added to (bi,ei) and (bi,ci) branches. -// hyperbolic smoothing used in rbi computation to avoid devide-by-zero. - -// ********************************************************************************* -// 06/06: Comment on NODE COLLAPSING: -// Presently this verilog code permits a minimum of 1 milli-Ohm resistance for any -// series resistance as well as for thermal resistance RTH. If any of the resistance -// values drops below this minimum value, the corresponding nodes are shorted with -// zero voltage contribution. We want the model compilers/simulators deal this -// situation in such a manner that the corresponding node is COLLAPSED. -// We expect that the simulators should permit current contribution statement -// for any branch with resistance value more than (or equal to) 1 milli-Ohm without -// any convergence problem. In fact, we wish NOT to have to use a voltage contribution -// statement in our Verilog code, except as an indication for the model compiler/simulator -// to interprete a zero branch voltage as NODE-COLLAPSING action. -// ********************************************************************************** - -//***************************************************** -//***************************************************** -// 08/04:(Modification by Cornelia Thiele) -// New expression for the normalized hole charge qpt and the model parameter AHQ is inserted -// The reverse Early-Effect VER is reintroduced -// A temperature dependent modeling of IQF using the model parameter ZETAIQF is included - -//***************************************************** -//***************************************************** -// 11/08: Modification done at TUD -// 3 more parameters VDEDC, ZEDC, AJEDC have been introduced for DC depletion charge -// Flag FIQF has been introduced to introduce voltage dependence in the base related critical current -// ZETARTH has been introduced for temperature dependent thermal resistance -//***************************************************** - -//Default simulator: Spectre - -`ifdef insideADMS - `define P(p) (*p*) - `define PGIVEN(p) $given(p) - `define INITIAL_MODEL @(initial_model) -`else - `define P(p) - `define PGIVEN(p) p - `define INITIAL_MODEL @(initial_step) -`endif - - -//ADS -`include "constants.vams" -`include "disciplines.vams" -//`include "compact.vams" - -//Spectre -//`include "constants.h" -//`include "discipline.h" - - -`define NPN +1 -`define PNP -1 - -`define VPT_thresh 1.0e2 -`define EXPLIM 80.0 -`define INF 1.0e6 -`define TMAX 326.85 -`define TMIN -100.00 -`define MIN_R 0.001 -`define Gmin 1.0e-12 -//`define Gmin $simparam("gmin") //suggested by L.L -//`define Gmin $simparam("gmin",1e-12) //suggested by L.L - -`define QCMODF(vj,cj0,vd,z,aj,cjf)\ - if(cj0 > 0.0) begin\ - vf = vd*(1.0-exp(-ln(aj)/z));\ - xvf = (vf-vj)/VT;\ - xvf2 = sqrt(xvf*xvf+1.921812);\ - v_j = vf-VT*(xvf+xvf2)*0.5;\ - dvj = 0.5*(xvf+xvf2)/xvf2;\ - cjf = cj0*exp(-z*ln(1-v_j/vd))*dvj+aj*cj0*(1-dvj);\ - end else begin\ - cjf = 0.0;\ - end - -// DEPLETION CHARGE CALCULATION -// Hyperbolic smoothing used; no punch-through -`define QJMODF(vj,cj0,vd,z,aj,qjf)\ - if(cj0 > 0.0) begin\ - vf = vd*(1.0-exp(-ln(aj)/z));\ - xvf = (vf-vj)/VT;\ - xvf2 = sqrt(xvf*xvf+1.921812);\ - v_j = vf-VT*(xvf+xvf2)*0.5;\ - x = 1.0-z;\ - y = 1.0-exp(x*ln(1.0-v_j/vd));\ - qjf = cj0*vd*y/x+aj*cj0*(vj-v_j);\ - end else begin\ - qjf = 0.00;\ - end - - -// Depletion Charge : with punch through -`define QJMOD(vj,cj0,vd,z,vpt,aj,qjf)\ - if(cj0 > 0.0) begin\ - zr = z/4.0;\ - vp = vpt-vd;\ - vf = vd*(1.0-exp(-ln(aj)/z));\ - cmax = aj*cj0;\ - cr = cj0*exp((z-zr)*ln(vd/vpt));\ - a = VT;\ - ve = (vf-vj)/a;\ - if (ve <= `EXPLIM) begin\ - ex1 = exp(ve);\ - ee1 = 1.0+ex1;\ - vj1 = vf-a*ln(ee1);\ - end else begin\ - vj1 = vj;\ - end\ - a = 0.1*vp+4.0*VT;\ - vr = (vp+vj1)/a;\ - if (vr <= `EXPLIM) begin\ - ex1 = exp(vr);\ - ee1 = 1.0+ex1;\ - vj2 = -vp+a*ln(ee1);\ - end else begin\ - vj2 = vj1;\ - end\ - vj4 = vj-vj1;\ - ez = 1.0-z;\ - ezr = 1.0-zr;\ - vdj1 = ln(1.0-vj1/vd);\ - vdj2 = ln(1.0-vj2/vd);\ - qj1 = cj0*(1.0-exp(vdj2*ez))/ez;\ - qj2 = cr*(1.0-exp(vdj1*ezr))/ezr;\ - qj3 = cr*(1.0-exp(vdj2*ezr))/ezr;\ - qjf = (qj1+qj2-qj3)*vd+cmax*vj4;\ - end else begin\ - qjf = 0.0;\ - end - - -// DEPLETION CHARGE CALCULATION SELECTOR: -// Dependent on junction punch-through voltage -// Important for collector related junctions -`define HICJQ(vj,cj0,vd,z,vpt,qjf)\ - if(vpt < `VPT_thresh) begin\ - `QJMOD(vj,cj0,vd,z,vpt,2.4,qjf)\ - end else begin\ - `QJMODF(vj,cj0,vd,z,2.4,qjf)\ - end - -//Temperature dependence of depletion capacitance parameters -`define TMPHICJ(cj0,vd,z,vg,cj0_t,vd_t)\ - arg = 0.5*vd/vt0;\ - vdj0 = 2*vt0*ln(exp(arg)-exp(-arg));\ - vdjt = vdj0*qtt0+vg*(1-qtt0)-mg*VT*ln_qtt0;\ - vd_t = vdjt+2*VT*ln(0.5*(1+sqrt(1+4*exp(-vdjt/VT))));\ - cj0_t = cj0*exp(z*ln(vd/vd_t)); - - -//Limiting exponential -`define LIN_EXP(le, arg)\ - if(arg > 80) begin\ - le = (1 + ((arg) - 80));\ - arg = 80;\ - end else begin\ - le=1;\ - end\ - le = le*limexp(arg); - -// IDEAL DIODE (WITHOUT CAPACITANCE): -// conductance not calculated -// INPUT: -// IS, IST : saturation currents (model parameter related) -// UM1 : ideality factor -// U : branch voltage -// IMPLICIT INPUT: -// VT : thermal voltage -// OUTPUT: -// Iz : diode current -`define HICDIO(IS,IST,UM1,U,Iz)\ - DIOY = U/(UM1*VT);\ - if (IS > 0.0) begin\ - if (DIOY > 80) begin\ - le = (1 + ((DIOY) - 80));\ - DIOY = 80;\ - end else begin\ - le = 1;\ - end\ - le = le*limexp(DIOY);\ - Iz = IST*(le-1.0);\ - if(DIOY <= -14.0) begin\ - Iz = -IST;\ - end\ - end else begin\ - Iz = 0.0;\ - end - - -module hicumL0V1p2 (c,b,e,s,tnode); - - -//Node definitions - - inout c,b,e,s,tnode; - electrical c `P(info="external collector node"); - electrical b `P(info="external base node"); - electrical e `P(info="external emitter node"); - electrical s `P(info="external substrate node"); - electrical ci `P(info="internal collector node"); - electrical bi `P(info="internal base node"); - electrical ei `P(info="internal emitter node"); - electrical tnode `P(info="local temperature rise node"); - - - //Branch definitions - branch (ci,c) br_cic_i; - branch (ci,c) br_cic_v; - branch (ei,e) br_eie_i; - branch (ei,e) br_eie_v; - branch (bi,ei) br_biei; - branch (bi,ci) br_bici; - branch (ci,ei) br_ciei; - branch (b,bi) br_bbi_i; - branch (b,bi) br_bbi_v; - branch (b,e) br_be; - branch (b,ci) br_bci; - branch (b,s) br_bs; - branch (s,ci) br_sci; - branch (tnode ) br_sht; - -// -// Parameter initialization with default values - -// Collector current - parameter real is = 1.0e-16 from [0:1] `P(spice:name="is" info="(Modified) saturation current" m:factor="yes" unit="A"); - parameter real mcf = 1.00 from (0:10] `P(spice:name="mcf" info="Non-ideality coefficient of forward collector current"); - parameter real mcr = 1.00 from (0:10] `P(spice:name="mcr" info="Non-ideality coefficient of reverse collector current"); - parameter real vef = `INF from (0:`INF] `P(spice:name="vef" info="forward Early voltage (normalization volt.)" unit="V" default:value="infinity"); - parameter real ver = `INF from (0:`INF] `P(spice:name="ver" info="reverse Early voltage (normalization volt.)" unit="V" default:value="infinity"); - parameter real iqf = `INF from (0:`INF] `P(spice:name="iqf" info="forward d.c. high-injection roll-off current" unit="A" m:factor="yes" default:value="infinity"); - - parameter real fiqf = 0 from [0:1] `P(spice:name="fiqf" info="flag for turning on base related critical current" default:value="zero"); - - parameter real iqr = `INF from (0:`INF] `P(spice:name="iqr" info="inverse d.c. high-injection roll-off current" unit="A" m:factor="yes" default:value="infinity"); - parameter real iqfh = `INF from (0:`INF] `P(spice:name="iqfh" info="high-injection correction current" unit="A" m:factor="yes"); - parameter real tfh = 0.0 from [0:`INF) `P(spice:name="tfh" info="high-injection correction factor" test:value="2e-9" m:factor="yes"); - parameter real ahq = 0 from [-0.9:10] `P(spice:name="ahcx" info="Smoothing factor for the d.c. injection width"); - -// Base current - parameter real ibes = 1e-18 from [0:1] `P(spice:name="ibes" info="BE saturation current" unit="A" m:factor="yes"); - parameter real mbe = 1.0 from (0:10] `P(spice:name="mbe" info="BE non-ideality factor"); - parameter real ires = 0.0 from [0:1] `P(spice:name="ires" info="BE recombination saturation current" test:value="1e-16" unit="A" m:factor="yes"); - parameter real mre = 2.0 from (0:10] `P(spice:name="mre" info="BE recombination non-ideality factor"); - parameter real ibcs = 0.0 from [0:1] `P(spice:name="ibcs" info="BC saturation current" test:value="1e-16" unit="A" m:factor="yes"); - parameter real mbc = 1.0 from (0:10] `P(spice:name="mbc" info="BC non-ideality factor"); - -// BE depletion cap - parameter real cje0 = 1.0e-20 from (0:`INF) `P(spice:name="cje0" info="Zero-bias BE depletion capacitance" unit="F" test:value="2e-14" m:factor="yes"); - parameter real vde = 0.9 from (0:10] `P(spice:name="vde" info="BE built-in voltage" unit="V"); -// parameter real ze = 0.5 from (0:1] `P(spice:name="ze" info="BE exponent factor"); - parameter real ze = 0.5 from (0:1) `P(spice:name="ze" info="BE exponent factor"); - parameter real aje = 2.5 from [1:`INF) `P(spice:name="aje" info="Ratio of maximum to zero-bias value"); - - - parameter real vdedc = 0.9 from (0:10] `P(spice:name="vdedc" info="BE charge built-in voltage for d.c. transfer current" unit="V"); -// parameter real zedc = 0.5 from (0:1] `P(spice:name="zedc" info="charge BE exponent factor for d.c. transfer current"); - parameter real zedc = 0.5 from (0:1) `P(spice:name="zedc" info="charge BE exponent factor for d.c. transfer current"); - parameter real ajedc = 2.5 from [1:`INF) `P(spice:name="ajedc" info="BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current"); - - // parameter real cje0_dc = 1.0e-20 from (0:`INF) `P(spice:name="cje0" info="Zero-bias BE depletion capacitance" unit="F" test:value="2e-14" m:factor="yes"); - - - - -// Transit time - parameter real t0 = 0.0 from [0:`INF) `P(spice:name="t0" info="low current transit time at Vbici=0" test:value="5e-12" unit="s"); - parameter real dt0h = 0.0 `P(spice:name="dt0h" info="Base width modulation contribution" test:value="2e-12" unit="s"); - parameter real tbvl = 0.0 from [0:`INF) `P(spice:name="tbvl" info="SCR width modulation contribution" test:value="4e-12" unit="s"); - parameter real tef0 = 0.0 from [0:`INF) `P(spice:name="tef0" info="Storage time in neutral emitter" test:value="1e-12" unit="s"); - parameter real gte = 1.0 from (0:10] `P(spice:name="gte" info="Exponent factor for emitter transit time"); - parameter real thcs = 0.0 from [0:`INF) `P(spice:name="thcs" info="Saturation time at high current densities" test:value="3e-11" unit="s"); - parameter real ahc = 0.1 from (0:10] `P(spice:name="ahc" info="Smoothing factor for current dependence"); - parameter real tr = 0.0 from [0:`INF) `P(spice:name="tr" info="Storage time at inverse operation" unit="s"); - -// Critical current - parameter real rci0 = 150 from (0:`INF) `P(spice:name="rci0" info="Low-field collector resistance under emitter" test:value="50" unit="Ohm" m:inverse_factor="yes"); - parameter real vlim = 0.5 from (0:10] `P(spice:name="vlim" info="Voltage dividing ohmic and satur.region" unit="V"); - parameter real vpt = 100 from (0:100] `P(spice:name="vpt" info="Punch-through voltage" test:value="10" unit="V" default="infinity"); - parameter real vces = 0.1 from [0:1] `P(spice:name="vces" info="Saturation voltage" unit="V"); - - - -// BC depletion cap intern - parameter real cjci0 = 1.0e-20 from (0:`INF) `P(spice:name="cjci0" info="Total zero-bias BC depletion capacitance" test:value="1e-15" unit="F" m:factor="yes"); - parameter real vdci = 0.7 from (0:10] `P(spice:name="vdci" info="BC built-in voltage" test:value="0.7" unit="V"); - parameter real zci = 0.333 from (0:1] `P(spice:name="zci" info="BC exponent factor" test:value="0.4"); - parameter real vptci = 100 from (0:100] `P(spice:name="vptci" info="Punch-through voltage of BC junction" test:value="50" unit="V"); - -// BC depletion cap extern - parameter real cjcx0 = 1.0e-20 from [0:`INF) `P(spice:name="cjcx0" info="Zero-bias external BC depletion capacitance" unit="F" test:value="1e-15" m:factor="yes"); - parameter real vdcx = 0.7 from (0:10] `P(spice:name="vdcx" info="External BC built-in voltage" unit="V"); - parameter real zcx = 0.333 from (0:1] `P(spice:name="zcx" info="External BC exponent factor"); - parameter real vptcx = 100 from (0:100] `P(spice:name="vptcx" info="Punch-through voltage" unit="V" test:value="5.0" default="infinity"); - parameter real fbc = 1.0 from [0:1] `P(spice:name="fbc" info="Split factor = Cjci0/Cjc0" test:value="0.5"); - -// Base resistance - parameter real rbi0 = 0.0 from [0:`INF) `P(spice:name="rbi0" info="Internal base resistance at zero-bias" test:value="100" unit="Ohm" m:inverse_factor="yes"); - parameter real vr0e = 2.5 from (0:`INF] `P(spice:name="vr0e" info="forward Early voltage (normalization volt.)" unit="V"); - parameter real vr0c = `INF from (0:`INF] `P(spice:name="vr0c" info="forward Early voltage (normalization volt.)" unit="V" default="infinity" test:value="25.0"); - parameter real fgeo = 0.656 from [0:`INF] `P(spice:name="fgeo" info="Geometry factor" test:value="0.73"); - -// Series resistances - parameter real rbx = 0.0 from [0:`INF) `P(spice:name="rbx" info="External base series resistance" test:value="8.8" unit="Ohm" m:inverse_factor="yes"); - parameter real rcx = 0.0 from [0:`INF) `P(spice:name="rcx" info="Emitter series resistance" test:value="12.5" unit="Ohm" m:inverse_factor="yes"); - parameter real re = 0.0 from [0:`INF) `P(spice:name="re" info="External collector series resistance" test:value="9.16" unit="Ohm" m:inverse_factor="yes"); - -// Substrate transfer current, diode current and cap - parameter real itss = 0.0 from [0:1.0] `P(spice:name="itss" info="Substrate transistor transfer saturation current" unit="A" test:value="1e-17" m:factor="yes"); - parameter real msf = 1.0 from (0:10] `P(spice:name="msf" info="Substrate transistor transfer current non-ideality factor"); - parameter real iscs = 0.0 from [0:1.0] `P(spice:name="iscs" info="SC saturation current" unit="A" test:value="1e-17" m:factor="yes"); - parameter real msc = 1.0 from (0:10] `P(spice:name="msc" info="SC non-ideality factor"); - parameter real cjs0 = 1.0e-20 from [0:`INF) `P(spice:name="cjs0" info="Zero-bias SC depletion capacitance" unit="F" test:value="1e-15" m:factor="yes"); - parameter real vds = 0.3 from (0:10] `P(spice:name="vds" info="SC built-in voltage" unit="V"); - parameter real zs = 0.3 from (0:1] `P(spice:name="zs" info="External SC exponent factor"); - parameter real vpts = 100 from (0:100] `P(spice:name="vpts" info="SC punch-through voltage" unit="V" test:value="5.0" default="infinity"); - -// Parasitic caps - parameter real cbcpar = 0.0 from [0:`INF) `P(spice:name="cbcpar" info="Collector-base isolation (overlap) capacitance" unit="F" m:factor="yes" test:value="1e-15"); - parameter real cbepar = 0.0 from [0:`INF) `P(spice:name="cbepar" info="Emitter-base oxide capacitance" unit="F" m:factor="yes" test:value="2e-15"); - -// BC avalanche current - parameter real eavl = 0.0 from [0:inf) `P(spice:name="eavl" info="Exponent factor" test:value="1e-14"); - parameter real kavl = 0.0 from [0:`INF) `P(spice:name="kavl" info="Prefactor" test:value="1.19"); - -// Flicker noise - parameter real kf = 0.0 from [0:`INF) `P(spice:name="kf" info="flicker noise coefficient" unit="M^(1-AF)"); - parameter real af = 2.0 from (0:10] `P(spice:name="af" info="flicker noise exponent factor"); - -// Temperature dependance - parameter real vgb = 1.2 from (0:10] `P(spice:name="vgb" info="Bandgap-voltage" unit="V" test:value="1.17"); - parameter real vge = 1.17 from (0:10] `P(spice:name="vge" info="Effective emitter bandgap-voltage" unit="V" test:value="1.07"); - parameter real vgc = 1.17 from (0:10] `P(spice:name="vgc" info="Effective collector bandgap-voltage" unit="V" test:value="1.14"); - parameter real vgs = 1.17 from (0:10] `P(spice:name="vgs" info="Effective substrate bandgap-voltage" unit="V" test:value="1.17"); - parameter real f1vg =-1.02377e-4 `P(spice:name="f1vg" info="Coefficient K1 in T-dependent bandgap equation" unit="V/K"); - parameter real f2vg = 4.3215e-4 `P(spice:name="f2vg" info="Coefficient K2 in T-dependent bandgap equation" unit="V/K"); - parameter real alt0 = 0.0 `P(spice:name="alt0" info="Frist-order TC of tf0" unit="1/K"); - parameter real kt0 = 0.0 `P(spice:name="kt0" info="Second-order TC of tf0" unit="1/K^2"); - parameter real zetact = 3.0 `P(spice:name="zetact" info="Exponent coefficient in transfer current temperature dependence" test:value="3.5"); - parameter real zetabet = 3.5 `P(spice:name="zetabet" info="Exponent coefficient in BE junction current temperature dependence" test:value="4.0"); - parameter real zetaci = 0.0 `P(spice:name="zetaci" info="TC of epi-collector diffusivity" test:value="1.6"); - parameter real alvs = 0.0 `P(spice:name="alvs" info="Relative TC of satur.drift velocity" unit="1/K" test:value="1e-3"); - parameter real alces = 0.0 `P(spice:name="alces" info="Relative TC of vces" unit="1/K" test:value="4e-4"); - parameter real zetarbi = 0.0 `P(spice:name="zetarbi" info="TC of internal base resistance" test:value="0.6"); - parameter real zetarbx = 0.0 `P(spice:name="zetarbx" info="TC of external base resistance" test:value="0.2"); - parameter real zetarcx = 0.0 `P(spice:name="zetarcx" info="TC of external collector resistance" test:value="0.2"); - parameter real zetare = 0.0 `P(spice:name="zetare" info="TC of emitter resistances"); - parameter real zetaiqf = 0.0 `P(spice:name="zetiqf" info="TC of iqf"); - parameter real alkav = 0.0 `P(spice:name="alkav" info="TC of avalanche prefactor" unit="1/K"); - parameter real aleav = 0.0 `P(spice:name="aleav" info="TC of avalanche exponential factor" unit="1/K"); - - parameter real zetarth = 0.0 `P(spice:name="zetarth" info="Exponent factor for temperature dependent thermal resistance" test:value="0.0"); - -// Self-heating - parameter integer flsh = 0 from [0:2] `P(spice:name="flsh" info="Flag for self-heating calculation" test:value="2"); - parameter real rth = 0.0 from [0:`INF) `P(spice:name="rth" info="Thermal resistance" test:value="200.0" unit="K/W" m:inverse_factor="yes"); - parameter real cth = 0.0 from [0:`INF) `P(spice:name="cth" info="Thermal capacitance" test:value="0.1" unit="Ws/K" m:factor="yes"); - -// Transistor type - parameter integer npn = 1 from [0:1] `P(spice:isflag="yes" info="model type flag for npn" ); - parameter integer pnp = 0 from [0:1] `P(info="model type flag for pnp" ); - -//Circuit simulator specific parameters - parameter real tnom = 27 `P(spice:name="tnom" info="Temperature for which parameters are valid" unit="C"); - parameter real dt = 0.0 `P(spice:name="dt" type="instance" info="Temperature change for particular transistor" unit="K"); - - -// Declaration of the variables: begin - - real HICUMtype `P(spice:name="type" info="Device type from npn or pnp flags" unit="no" ask="yes"); - - // QCJMOD - real cj0,vd,z,aj; - real zr,vp; - real cmax,cr,ve; - real ee1,ez,ezr,vdj1,vdj2,ex1,vr,vj1,vj2,vj4; - real qj1,qj2,qj3,qjf; - - - - //Cjfun *** VT, removed: BA - real cj1,cj2,cj3,cjf; - - - //cjtfun *** tnom,VT,mg,vt0, removed: BA - real vg; - real vdj0,vdjt,cj0_t,vd_t,aj_t; - - - // temperature and drift - real VT,Tamb,Tdev,Tnom,dT,qtt0,ln_qtt0; - real vde_t,vdci_t,vdcx_t,vds_t,vdedc_t; - real is_t,ires_t,ibes_t,ibcs_t,iqf_t; - real itss_t,iscs_t,cje0_t,cjci0_t,cjcx0_t, cje0_dc_t, cje0_dc; - real cjs0_t,rci0_t,vlim_t; - real vces_t,thcs_t,tef0_t,rbi0_t; - real rbx_t,rcx_t,re_t,t0_t,eavl_t,kavl_t; - real aje_t,ajedc_t; - - // bc charge and cap - real qjci `P(ask="yes" info="B-C internal junction charge" unit="C"); - real qjcx,qjcii,cjcii,qjcxi,qjciii; //cjcx - real cjci0_t_ii,cjcx0_t_ii,cjcx0_t_i,v_j; - - // be junction - real qjei `P(ask="yes" info="B-E internal junction charge" unit="C"); - real cjei `P(ask="yes" info="B-E internal junction capacitance" unit="F"); - real vf,vj,x,y,e1,e2; - - // transfer and internal base current - real cc,qj_2,qj,facl; - real tf0,ickf,ickr,itfi,itri,qm, qml, qmh; - real qpt,itf,itr, qpt_l, qpt_h, denom_iqf; - real it `P(ask="yes" info="Transfer Current" unit="A"); - real ibe,ire,ibi; - real itfl,itrl,al,s3l,wl,d_qfh; - - - - // be diffusion charge - real qf,qf0,dqfh,dqef; - real dtef,dtfh,tf,ick; - real vc,vceff,s3,w,a,tww, aa, a1, a2; - - // bc diffusion charge - real qr; - - // avalanche current source - real v_bord,a_iavl,lncc; - - // base resistance - real rb,eta,rbi,qje,Qz_nom,fQz; - - // substrate transistor, diode and cap - real qjs,HSa,HSb,HSI_Tsu,HSUM; - - // self heating - real pterm; - real rth_t, x_t; - - // new for temperature dependence - real mg,zetabci,zetasct,zetatef,avs; - real k1,k2,vgbe,vgbc,vgsc,dvg; - real xvf,xvf2,dvj,uvc,vt0; - - // noise - real flicker_Pwr,fourkt,twoq; - - // LIN_EXP - real le,arg,le1,arg1,le2,arg2; - - //HICDIO - real IS,IST,UM1,U,Iz,DIOY; - - // branch voltages - real Vbci,Vbici,Vbiei,Vciei,Vsci,Veie,Vbbi,Vcic,Vbe,Vrth; - - //Output to be seen - real ijbc `P(ask="yes" info="Base-collector diode current" unit="A"); - real iavl `P(ask="yes" info="Avalanche current" unit="A"); - real ijsc `P(ask="yes" info="Substrate-collector diode current" unit="A"); - real Ieei `P(ask="yes" info="Current through external to internal emitter node" unit="A"); - real Icci `P(ask="yes" info="Current through external to internal collector node" unit="A"); - real Ibbi `P(ask="yes" info="Current through external to internal base node" unit="A"); - real Ibici `P(ask="yes" info="Base-collector diode current minus the avalanche current" unit="A"); - real ijbe `P(ask="yes" info="Base-emitter diode current" unit="A"); - - real Qbci,Qbe,Qbici,Qbiei; -//Declaration of the variables: end - - -// -//======================== calculation of the transistor =================== -// - -analog begin - -// assign voltages with regard to transistor type - - `INITIAL_MODEL - begin - if (`PGIVEN(npn)) - HICUMtype = `NPN; - else if (`PGIVEN(pnp)) - HICUMtype = `PNP; - else - HICUMtype = `NPN; - end - - Vbci = HICUMtype*V(br_bci); - Vbici = HICUMtype*V(br_bici); - Vbiei = HICUMtype*V(br_biei); - Vciei = HICUMtype*V(br_ciei); - Vsci = HICUMtype*V(br_sci); - Veie = V(br_eie_v); - Vcic = V(br_cic_v); - Vbbi = V(br_bbi_v); - Vbe = HICUMtype*V(br_be); - Vrth = V(br_sht); - - - -// -// temperature and resulting parameter drift -// - - Tnom = tnom+273.15; - Tamb = $temperature; - Tdev = Tamb+dt+Vrth; - -// Limit temperature to avoid FPE's in equations - if(Tdev < `TMIN + 273.15) begin - Tdev = `TMIN + 273.15; - end else begin - if (Tdev > `TMAX + 273.15) begin - Tdev = `TMAX + 273.15; - end - end - - vt0 = `P_K*Tnom /`P_Q; - VT = `P_K*Tdev /`P_Q; - dT = Tdev-Tnom; - qtt0 = Tdev/Tnom; - ln_qtt0 = ln(qtt0); - k1 = f1vg*Tnom; - k2 = f2vg*Tnom+k1*ln(Tnom); - avs = alvs*Tnom; - vgbe = (vgb+vge)/2; - vgbc = (vgb+vgc)/2; - vgsc = (vgs+vgc)/2; - mg = 3-`P_Q*f1vg/`P_K; - zetabci = mg+1-zetaci; - zetasct = mg-1.5; //+1-m_upS with m_upS=2.5 - is_t = is*exp(zetact*ln_qtt0+vgb/VT*(qtt0-1)); - ibes_t = ibes*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); - ires_t = ires*exp(0.5*mg*ln_qtt0+0.5*vgbe/VT*(qtt0-1)); - ibcs_t = ibcs*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); - itss_t = itss*exp(zetasct*ln_qtt0+vgc/VT*(qtt0-1)); - iscs_t = iscs*exp(zetasct*ln_qtt0+vgs/VT*(qtt0-1)); - - `TMPHICJ(cje0,vde,ze,vgbe,cje0_t,vde_t) - - // `TMPHICJ(cje0,vde,zedc,vgbe,cje0_t,vdedc_t) - - cje0_dc = cje0; - - `TMPHICJ(cje0_dc,vdedc,zedc,vgbe,cje0_dc_t,vdedc_t) //introducing DC capacitance - - - aje_t = aje*vde_t/vde; - - ajedc_t = ajedc*vdedc_t/vdedc; - - `TMPHICJ(cjci0,vdci,zci,vgbc,cjci0_t,vdci_t) - `TMPHICJ(cjcx0,vdcx,zcx,vgbc,cjcx0_t,vdcx_t) - `TMPHICJ(cjs0,vds,zs,vgsc,cjs0_t,vds_t) - iqf_t = iqf*exp(zetaiqf*ln_qtt0); - rci0_t = rci0*exp(zetaci*ln_qtt0); - vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); - vces_t = vces*(1+alces*dT); - t0_t = t0*(1+alt0*dT+kt0*dT*dT); - thcs_t = thcs*exp((zetaci-1)*ln_qtt0); - zetatef = zetabet-zetact-0.5; - dvg = vgb-vge; - tef0_t = tef0*exp(zetatef*ln_qtt0-dvg/VT*(qtt0-1)); - rbx_t = rbx*exp(zetarbx*ln_qtt0); - rcx_t = rcx*exp(zetarcx*ln_qtt0); - rbi0_t = rbi0*exp(zetarbi*ln_qtt0); - re_t = re*exp(zetare*ln_qtt0); - eavl_t = eavl*exp(aleav*dT); - kavl_t = kavl*exp(alkav*dT); - - - //Temperature dependence of Thermal resistance - - - if (zetarth!=0) begin - - rth_t = rth*exp(zetarth*ln(Tdev/Tnom)); - - end else begin - - rth_t=rth; - - end - - - - //eavl_t = eavl; - //kavl_t = kavl; - - - -// -// Calculation of intrinsic transistor elements -// - -// BC charge and cap (internal and external) - -// The cjcx0 value is used to switch between one (cjcx0=0) and two bc parameter sets -// 1. For one parameter set only the internal bc set is partitioned by fbc -// 2. For two independent sets only the external set is partitioned by fbc - - if (cjcx0_t==0) begin - cjci0_t_ii = cjci0_t*fbc; // zero bias internal portion - qjcxi = 0; - cjcx0_t_i = cjci0_t*(1-fbc); // zero bias external portion - `HICJQ(Vbci,cjcx0_t_i,vdci_t,zci,vptci,qjcx) - end else begin - cjci0_t_ii = cjci0_t; // zero bias internal portion - cjcx0_t_ii = cjcx0_t*fbc; - `HICJQ(Vbici,cjcx0_t_ii,vdcx_t,zcx,vptcx,qjcxi) - cjcx0_t_i = cjcx0_t*(1-fbc); // zero bias external portion - `HICJQ(Vbci,cjcx0_t_i,vdcx_t,zcx,vptcx,qjcx) - end - `HICJQ(Vbici,cjci0_t_ii,vdci_t,zci,vptci,qjci) - qjcii = qjci+qjcxi; - -//Internal bc cap without punch through for cc - - //`HICJQ(Vbici,cjci0_t_ii,vdci_t,zci,100,qjciii) - `QCMODF(Vbici,cjci0_t_ii,vdci_t,zci,2.4,cjcii) - //cjcii = ddx(qjciii,V(bi)); - -//Internal be cap and charge - -// `QJMODF(Vbiei,cje0_dc_t,vde_t,ze,aje_t,qjei) -// cjei = ddx(qjei,V(bi)); - -// Critical current: ick - vc = Vciei-vces_t; - uvc = vc/VT-1; - vceff = VT*(1+0.5*(uvc+sqrt(uvc*uvc+1.921812))); - x = (vceff-vlim_t)/vpt; - ick = vceff*(1+0.5*(x+sqrt(x*x+1e-3)))/rci0_t/sqrt(1+vceff*vceff/vlim_t/vlim_t); - - -// Normalized BC cap and charge - cc = cjci0_t_ii/cjcii; - qjci = qjci/cjci0_t_ii; - - `QJMODF(Vbiei,cje0_dc_t,vdedc_t,zedc,ajedc_t,qjei) - - qje = qjei/cje0_t; - qj_2 = (1+qjci/vef+qje/ver)/2; - - // qj = 1+qjci/vef; - - -// Minority charge transit time - tf0 = t0_t+dt0h*(cc-1)+tbvl*(1/cc-1); - -// DC critical currents -// ickf = iqf_t; - - //Determination of base realted critical current - - if (fiqf==1)begin - - denom_iqf = fiqf*((tf0/t0)-1); - - ickf = iqf_t/(1+denom_iqf); - - end else begin - - ickf = iqf_t; - - end - - ickr = iqr; - -// Ideal transfer currents - arg1 = Vbiei/(mcf*VT); - `LIN_EXP(le1,arg1) - itfi=is_t*le1; - - arg2 = Vbici/(mcr*VT); - `LIN_EXP(le2,arg2) - itri=is_t*le2; - - - - - -// Normalized minority charge at low currents (w=0) and high currents (w=1) - - - if (tfh!=0)begin - - qml = itfi/ickf+itri/ickr+exp((0.6666)*ln(itfi*(itfi/ick)*((tfh)/iqfh))); - qmh = itfi/ickf+itri/ickr+itfi/iqfh+exp((0.6666)*ln(itfi*(itfi/ick)*((tfh)/iqfh))); - - end else begin - - qml = itfi/ickf+itri/ickr; - qmh = itfi/ickf+itri/ickr+itfi/iqfh; - - end - - - - - // Normalized hole charge at low currents (w=0) and high currents (w=1) - - qpt_l= qj_2+sqrt((qj_2)*(qj_2)+qml); - qpt_h= qj_2+sqrt((qj_2)*(qj_2)+qmh); - -// Calculation of the injection width - - a1= 1-ick/(1+ahq)/itfi*qpt_l; - a2= 1+ick/(1+ahq)/itfi*(qpt_h-qpt_l); - aa= a1/a2; - - w= (sqrt(aa*aa+0.01)+aa)/(1+sqrt(1+0.01)); - -// Normalized minority charge - - - if (tfh!=0) begin - - qm = itfi/ickf+itri/ickr+itfi/iqfh*w*w+exp((0.6666)*ln(itfi*(itfi/ick)*((tfh)/iqfh))); - - end else begin - - qm = itfi/ickf+itri/ickr+itfi/iqfh*w*w; - - end - - - -// Normalized total hole charge - qpt = qj_2+sqrt((qj_2)*(qj_2)+qm); - if (qpt<=1e-20) begin - qpt=1e-20; - end - - -// Low transfer current - itf = itfi/qpt; - itr = itri/qpt; - - - - - - - // Transfer current - - if (itf<=1e-20) begin - itf = 1e-20; - end - it = itf-itr; - - -// BE diffusion charge - -// Calculation of low-current portion - qf0 = tf0*itf; - -// Current dependent component - a = 1-ick/itf; - s3 = sqrt(a*a+ahc); - w = (a+s3)/(1+sqrt(1+ahc)); - tww = thcs_t*w*w; - dqfh = tww*itf; - dtfh = tww*(1+2*ick/itf/s3); - -// Emitter component - dtef = tef0_t*exp(gte*ln(itf/ick)); - dqef = dtef*itf/(gte+1.0); - -// Total minority charge and transit time - qf = qf0+dqef+dqfh; - tf = tf0+dtfh+dtef; - -// BC diffusion charge - qr = tr*itr; - -// Internal base current - -// BE diode - `HICDIO(ibes,ibes_t,mbe,Vbiei,ibe) - `HICDIO(ires,ires_t,mre,Vbiei,ire) - ijbe = ibe+ire; - -// BC diode - `HICDIO(ibcs,ibcs_t,mbc,Vbici,ijbc) - -// Total base current - ibi = ijbe+ijbc; - -// Avalanche current - - if (Vbici < 0) begin : HICAVL - v_bord = eavl_t*vdci_t; - if (vdci_t-Vbici>v_bord) begin - a_iavl = kavl_t/vdci_t*exp(-cc); - iavl = itf*a_iavl*(v_bord+(1+cc)*(vdci_t-Vbici-v_bord)); - end else begin - lncc = ln(1/cc); - iavl = kavl_t*itf*exp(-1/zci*lncc-eavl_t*exp((1/zci-1)*lncc)); - end - end else begin - iavl = 0; - end - -// -// Additional elements for external transistor -// - -// Base resistance - if(rbi0_t > 0.0) begin : HICRBI - // Conductivity modulation with hyperbolic smoothing - - Qz_nom = 1+qje/vr0e+qjci/vr0c+itf/ickf+itr/ickr; - fQz = 0.5*(Qz_nom+sqrt(Qz_nom*Qz_nom+0.01)); - rbi = rbi0_t/fQz; - - //rbi= rbi0_t*(1+0.2)/(0.2+qpt); - // Emitter current crowding - if (ibi > 0.0) begin - eta = fgeo*rbi*ibi/VT; - if (eta < 1e-6) begin - rbi = rbi*(1-0.5*eta); - end else begin - rbi = rbi*ln(eta+1)/eta; - end - end - end else begin - rbi = 0.0; - end - // Total base resistance - //rbi= rbi0_t; - rb = rbi+rbx_t; - -// Parasitic substrate transistor transfer current - if(itss > 0.0) begin : Sub_Transfer - HSUM = msf*VT; - HSa = limexp(Vbci/HSUM); - HSb = limexp(Vsci/HSUM); - HSI_Tsu = itss_t*(HSa-HSb); - end else begin - HSI_Tsu = 0.0; - end - -// Substrate diode and cap and charge - - `HICDIO(iscs,iscs_t,msc,Vsci,ijsc) - - `HICJQ(Vsci,cjs0_t,vds_t,zs,vpts,qjs) - -// Self heating - - if (flsh == 1 && rth_t >= `MIN_R) begin - pterm = it*Vciei+iavl*(vdci_t-Vbici); - end else if (flsh == 2 && rth_t >= `MIN_R) begin - pterm = Vciei*it + (vdci_t-Vbici)*iavl + ijbe*Vbiei + ijbc*Vbici + ijsc*Vsci; - if (rb >= `MIN_R) begin - pterm = pterm + Vbbi*Vbbi/rb; - end - if (re_t >= `MIN_R) begin - pterm = pterm + Veie*Veie/re_t; - end - if (rcx_t >= `MIN_R) begin - pterm = pterm + Vcic*Vcic/rcx_t; - end - end - -// -// Compute branch sources -// - - Ibici = ijbc - iavl; - - Qbci = cbcpar*Vbci; - Qbe = cbepar*Vbe; - Qbici = qjcii+qr; - - `QJMODF(Vbiei,cje0_t,vde_t,ze,aje_t,qjei) // For computation of AC charge - - Qbiei = qjei+qf; - - ijsc = HICUMtype*ijsc; - qjs = HICUMtype*qjs; - qjcx = HICUMtype*qjcx; - Qbci = HICUMtype*Qbci; - Qbe = HICUMtype*Qbe; - - Ibici = HICUMtype*Ibici; - Qbici = HICUMtype*Qbici; - ijbe = HICUMtype*ijbe; - Qbiei = HICUMtype*Qbiei; - it = HICUMtype*it; - -// -// Define branch sources -// - I(br_biei) <+ `Gmin*V(br_biei); - I(br_bici) <+ `Gmin*V(br_bici); - - I(br_bs) <+ HSI_Tsu; - I(br_sci) <+ ijsc `P(spectre:gmin="add" spectre:pwl_passive="1e10"); - I(br_sci) <+ ddt(qjs); - I(br_bci) <+ ddt(qjcx); - I(br_bci) <+ ddt(Qbci); - I(br_be) <+ ddt(Qbe); - if (re >= `MIN_R) begin - I(br_eie_i) <+ Veie/re_t `P(spectre:gmin="add"); - end else begin -// V(br_eie_v) <+ 0.0; - I(br_eie_i) <+ V(br_eie_v)/1e-6; - end - if (rcx >= `MIN_R) begin - I(br_cic_i) <+ Vcic/rcx_t `P(spectre:gmin="add"); - end else begin -// V(br_cic_v) <+ 0.0; - I(br_cic_i) <+ V(br_cic_v)/1e-6; - end - if (rbi0 >= `MIN_R || rbx >= `MIN_R) begin - I(br_bbi_i) <+ Vbbi/rb `P(spectre:gmin="add"); - end else begin -// V(br_bbi_v) <+ 0.0; - I(br_bbi_i) <+ V(br_bbi_v)/1e-6; - end - I(br_bici) <+ Ibici `P(spectre:gmin="add" spectre:pwl_sat_current="IMAX" spectre:pwl_sat_cond="imax/0.025" spectre:pwl_rev_current="imax" spectre:pwl_rev_cond="IMAX/0.025"); - I(br_bici) <+ ddt(Qbici); - I(br_biei) <+ ijbe `P(spectre:gmin="add" spectre:pwl_fwd_current="IBEIS*exp(25.0)" spectre:pwl_fwd_node="bi" spectre:pwl_fwd_cond="IBEIS*exp(25.0)/0.025" spectre:pwl_sat_current="IMAX" spectre:pwl_sat_cond="IMAX/0.025" spectre:pwl_passive="1e10"); - I(br_biei) <+ ddt(Qbiei); - I(br_ciei) <+ it `P(spectre:pwl_fwd_current="IS*exp(25.0)" spectre:pwl_fwd_node="bi" spectre:pwl_fwd_cond="IS*exp(25.0)/0.025" spectre:pwl_rev_current="IMAX" spectre:pwl_rev_cond="IMAX/0.025" spectre:pwl_passive="1e10"); - - // Following code is an intermediate solution: - // ****************************************** - if(flsh == 0 || rth < `MIN_R) begin - I(br_sht) <+ Vrth/`MIN_R; - end else begin - I(br_sht) <+ Vrth/rth_t-pterm `P(spectre:gmin="add"); - I(br_sht) <+ ddt(cth*Vrth); - end - // ****************************************** - // For simulators having no problem with V(br_sht) <+ 0.0 - // with external thermal node, follwing code may be used. - // This external thermal node should remain accessible. - // ******************************************** - - //if(flsh == 0 || rth < `MIN_R) begin - // - // V(br_sht) <+ 0.0; - // - //end else begin - // I(br_sht) <+ Vrth/rth_t-pterm `P(spectre:gmin="add"); - // I(br_sht) <+ ddt(cth*Vrth); - // - //end - // ******************************************** - -// Noise sources -// Thermal noise - fourkt = 4.0 * `P_K * Tdev; - if(rbx >= `MIN_R || rbi0 >= `MIN_R) begin - I(br_bbi_i) <+ white_noise(fourkt/rb); - end - if(rcx >= `MIN_R) begin - I(br_cic_i) <+ white_noise(fourkt/rcx_t); - end - if(re >= `MIN_R) begin - I(br_eie_i) <+ white_noise(fourkt/re_t); - end - -// Shot noise - twoq = 2.0 * `P_Q; - I(br_biei) <+ white_noise(twoq*ijbe); - I(br_ciei) <+ white_noise(twoq*it); - -// Flicker noise - flicker_Pwr = kf*pow(ijbe,af); - I(br_biei) <+ flicker_noise(flicker_Pwr,1.0); - - - - -end // analog -endmodule diff --git a/qucs-core/src/components/verilog/hicumL0V1p2g.va b/qucs-core/src/components/verilog/hicumL0V1p2g.va deleted file mode 100644 index efd5df4441..0000000000 --- a/qucs-core/src/components/verilog/hicumL0V1p2g.va +++ /dev/null @@ -1,962 +0,0 @@ -//**************** COPYRIGHT (Originator: Michael Schroter)**************** -// No part of this code may be reproduced or used in any form without -// written permission from the originator - -// ## HICUM/L0 V1.2G presented to the HICUM WS 2010 ## -// 10/2010: vr declared twice -// 10/2010: ahq instead ahcx for the SPICE mane -// gmin to be added on the transfer courent source - -// ## comments to the MRG modified code ## -// 08/2010: smoothing to inhibit 1+Gjei/ver_t<0 -// 07/2010: log() vs. ln() bugs fixed -// 06/2010: HL2 consistent qj smoothing and avalanche TC formulation -// 04/2010: Major code related changes, introduction of MRG charges and bandgap feature temperature effects -// qj, rbi bugs fixed - -// ## original CEDIC comments ## - -// HICUM Level_0 Version_1.3: A Verilog-A description -// (A simplified version of HICUM Level2 model for BJT) -// ## It is modified after the first version of HICUM/L0 code ## - -// Minor code related changes -// 01/09: Introduction of temporary dc capacitance variable CJE_DC to call the procedure with -// the AC and DC parameter set and assign an AC and DC result to its output variables -// 01/09: Ranges of ZE & ZEDC have been modified to a new range (0:1) from the old range (0:1] -// 12/08: gmin declaration by L. Lemaitre. -// 12/08: rth has been used instead of rth_t (dynamic variable) in the corresponding if statement -// 12/08: Macro `QJMODF has been used to compute AC as well as DC charge with corresponding AC and DC variables respectively -// 11/08: Conditional statement for calculating normalized minority charge to avoid overflow at TFH=0 -// 11/08: Range of AHQ has been modified to a new range [-0.9:10] from the old range [0:10] -// 03/08: Quick Fix: Default value of TFH has been changed from infinity to zero and modification has been done to -// the default value limits to [0, inf) to include zero -// 12/06: Upper limit of FGEO is changed to infinity -// 06/06: Thermal node "tnode" set as external -// Flag FLSH introduced for controlling Self-heating calculation -// all if-else blocks marked with begin-end -// all series resistors and RTH are allowed to have a minimum value MIN_R -// 07/06: QCJMOD deleted, QJMODF introduced along with with HICJQ -// ddx() operator used with QJMOD and QJMODF wherever needed -// aj is kept at 2.4 except BE depletion charge -// Substrate transistor transfer current added. -// Gmin added to (bi,ei) and (bi,ci) branches. -// hyperbolic smoothing used in rbi computation to avoid devide-by-zero. - -// ********************************************************************************* -// 06/06: Comment on NODE COLLAPSING: -// Presently this verilog code permits a minimum of 1 milli-Ohm resistance for any -// series resistance as well as for thermal resistance RTH. If any of the resistance -// values drops below this minimum value, the corresponding nodes are shorted with -// zero voltage contribution. We want the model compilers/simulators deal this -// situation in such a manner that the corresponding node is COLLAPSED. -// We expect that the simulators should permit current contribution statement -// for any branch with resistance value more than (or equal to) 1 milli-Ohm without -// any convergence problem. In fact, we wish NOT to have to use a voltage contribution -// statement in our Verilog code, except as an indication for the model compiler/simulator -// to interprete a zero branch voltage as NODE-COLLAPSING action. -// ********************************************************************************** - -//***************************************************** -//***************************************************** -// 08/04:(Modification by Cornelia Thiele) -// New expression for the normalized hole charge qpt and the model parameter AHQ is inserted -// The reverse Early-Effect VER is reintroduced -// A temperature dependent modeling of IQF using the model parameter ZETAIQF is included - -//***************************************************** -//***************************************************** -// 11/08: Modification done at TUD -// 3 more parameters VDEDC, ZEDC, AJEDC have been introduced for DC depletion charge -// Flag FIQF has been introduced to introduce voltage dependence in the base related critical current -// ZETARTH has been introduced for temperature dependent thermal resistance -//***************************************************** - -//Default simulator: Spectre - -`ifdef insideADMS - `define P(p) (*p*) - `define PGIVEN(p) $given(p) - `define INITIAL_MODEL @(initial_model) -`else - `define P(p) - `define PGIVEN(p) p - `define INITIAL_MODEL @(initial_step) -`endif - - -//ADS -`include "constants.vams" -`include "disciplines.vams" -//`include "compact.vams" - -//Spectre -//`include "constants.h" -//`include "discipline.h" - -`define NPN +1 -`define PNP -1 - -`define VPT_thresh 1.0e2 -`define EXPLIM 80.0 -`define INF 1.0e6 -`define TMAX 326.85 -`define TMIN -100.00 -`define MIN_R 0.001 -`define Gmin 1.0e-12 -//`define Gmin $simparam("gmin") //suggested by L.L -//`define Gmin $simparam("gmin",1e-12) //suggested by L.L - -//============================== macro definitions follow ================================= -`define QCMODF(vj,cj0,vd,z,aj,cjf)\ - if(cj0 > 0.0) begin\ - vf = vd*(1.0-exp(-ln(aj)/z));\ - xvf = (vf-vj)/VT;\ - xvf2= sqrt(xvf*xvf+1.921812);\ - v_j = vf-VT*(xvf+xvf2)*0.5;\ - dvj = 0.5*(xvf+xvf2)/xvf2;\ - cjf = cj0*exp(-z*ln(1-v_j/vd))*dvj+aj*cj0*(1-dvj);\ - end else begin\ - cjf = 0.0;\ - end - -// DEPLETION CHARGE CALCULATION -// Hyperbolic smoothing used; no punch-through -`define QJMODF(vj,cj0,vd,z,aj,qjf)\ - if(cj0 > 0.0) begin\ - vf = vd*(1.0-exp(-ln(aj)/z));\ - xvf = (vf-vj)/VT;\ - xvf2= sqrt(xvf*xvf+1.921812);\ - v_j = vf-VT*(xvf+xvf2)*0.5;\ - x = 1.0-z;\ - y = 1.0-exp(x*ln(1.0-v_j/vd));\ - qjf = cj0*vd*y/x+aj*cj0*(vj-v_j);\ - end else begin\ - qjf = 0.00;\ - end - -// Depletion Charge : with punch through -`define QJMOD(vj,cj0,vd,z,vpt,aj,qjf)\ - if(cj0 > 0.0) begin\ - zr = z/4.0;\ - vp = vpt-vd;\ - vf = vd*(1.0-exp(-ln(aj)/z));\ - cmax= aj*cj0;\ - cr = cj0*exp((z-zr)*ln(vd/vpt));\ - a = VT;\ - ve = (vf-vj)/a;\ - if (ve <= `EXPLIM) begin\ - ex1 = exp(ve);\ - ee1 = 1.0+ex1;\ - vj1 = vf-a*ln(ee1);\ - end else begin\ - vj1 = vj;\ - end\ - a = 0.1*vp+4.0*VT;\ - vr= (vp+vj1)/a;\ - if (vr <= `EXPLIM) begin\ - ex1 = exp(vr);\ - ee1 = 1.0+ex1;\ - vj2 = -vp+a*ln(ee1);\ - end else begin\ - vj2 = vj1;\ - end\ - vj4 = vj-vj1;\ - ez = 1.0-z;\ - ezr = 1.0-zr;\ - vdj1= ln(1.0-vj1/vd);\ - vdj2= ln(1.0-vj2/vd);\ - qj1 = cj0*(1.0-exp(vdj2*ez))/ez;\ - qj2 = cr*(1.0-exp(vdj1*ezr))/ezr;\ - qj3 = cr*(1.0-exp(vdj2*ezr))/ezr;\ - qjf = (qj1+qj2-qj3)*vd+cmax*vj4;\ - end else begin\ - qjf = 0.0;\ - end - -// DEPLETION CHARGE CALCULATION SELECTOR: -// Dependent on junction punch-through voltage -// Important for collector related junctions -`define HICJQ(vj,cj0,vd,z,vpt,qjf)\ - if(vpt < `VPT_thresh) begin\ - `QJMOD(vj,cj0,vd,z,vpt,2.4,qjf)\ - end else begin\ - `QJMODF(vj,cj0,vd,z,2.4,qjf)\ - end - -//Temperature dependence of depletion capacitance parameters -`define TMPHICJ(cj0,vd,z,vg,cj0_t,vd_t)\ - arg = 0.5*vd/vt0;\ - vdj0 = 2*vt0*ln(exp(arg)-exp(-arg));\ - vdjt = vdj0*qtt0+vg*(1-qtt0)-mg*VT*ln_qtt0;\ - vd_t = vdjt+2*VT*ln(0.5*(1+sqrt(1+4*exp(-vdjt/VT))));\ - cj0_t = cj0*exp(z*ln(vd/vd_t)); - -//Limiting exponential -`define LIN_EXP(le, arg)\ - if(arg > 80) begin\ - le = (1 + ((arg) - 80));\ - arg = 80;\ - end else begin\ - le=1;\ - end\ - le = le*limexp(arg); - -// IDEAL DIODE (WITHOUT CAPACITANCE): -// conductance not calculated -// INPUT: -// IS, IST : saturation currents (model parameter related) -// UM1 : ideality factor -// U : branch voltage -// IMPLICIT INPUT: -// VT : thermal voltage -// OUTPUT: -// Iz : diode current -`define HICDIO(IS,IST,UM1,U,Iz)\ - DIOY = U/(UM1*VT);\ - if (IS > 0.0) begin\ - if (DIOY > 80) begin\ - le = (1 + ((DIOY) - 80));\ - DIOY = 80;\ - end else begin\ - le = 1;\ - end\ - le = le*limexp(DIOY);\ - Iz = IST*(le-1.0);\ - if(DIOY <= -14.0) begin\ - Iz = -IST;\ - end\ - end else begin\ - Iz = 0.0;\ - end - -//============================== end macro definitions ================================= - -module hicumL0V1p2g (c,b,e,s,tnode); - -//Node definitions - - inout c,b,e,s,tnode; - electrical c `P(info="external collector node"); - electrical b `P(info="external base node"); - electrical e `P(info="external emitter node"); - electrical s `P(info="external substrate node"); - electrical ci `P(info="internal collector node"); - electrical bi `P(info="internal base node"); - electrical ei `P(info="internal emitter node"); - electrical tnode `P(info="local temperature rise node"); - - //Branch definitions - branch (ci,c) br_cic_i; - branch (ci,c) br_cic_v; - branch (ei,e) br_eie_i; - branch (ei,e) br_eie_v; - branch (bi,ei) br_biei; - branch (bi,ci) br_bici; - branch (ci,ei) br_ciei; - branch (b,bi) br_bbi_i; - branch (b,bi) br_bbi_v; - branch (b,e) br_be; - branch (b,ci) br_bci; - branch (b,s) br_bs; - branch (s,ci) br_sci; - branch (tnode ) br_sht; - -// -// Parameter initialization with default values - -// Collector current - parameter real is = 1.0e-16 from [0:1] `P(spice:name="is" info="(Modified) saturation current" m:factor="yes" unit="A"); - parameter real mcf = 1.00 from (0:10] `P(spice:name="mcf" info="Non-ideality coefficient of forward collector current"); - parameter real mcr = 1.00 from (0:10] `P(spice:name="mcr" info="Non-ideality coefficient of reverse collector current"); - parameter real vef = `INF from (0:`INF] `P(spice:name="vef" info="forward Early voltage (normalization volt.)" unit="V" default:value="infinity"); - parameter real ver = `INF from (0:`INF] `P(spice:name="ver" info="reverse Early voltage (normalization volt.)" unit="V" default:value="infinity"); - parameter real iqf = `INF from (0:`INF] `P(spice:name="iqf" info="forward d.c. high-injection roll-off current" unit="A" m:factor="yes" default:value="infinity"); - parameter integer fiqf = 0 from [0:1] `P(spice:name="fiqf" info="flag for turning on base related critical current" default:value="zero"); - parameter real iqr = `INF from (0:`INF] `P(spice:name="iqr" info="inverse d.c. high-injection roll-off current" unit="A" m:factor="yes" default:value="infinity"); - parameter real iqfh = `INF from (0:`INF] `P(spice:name="iqfh" info="high-injection correction current" unit="A" m:factor="yes"); - parameter real iqfe = 0.0 from [0:`INF) `P(spice:name="iqfe" info="high-injection roll-off current" test:value="2e-9" m:factor="yes"); - parameter real ahq = 0.0 from [-0.9:10] `P(spice:name="ahq" info="Smoothing factor for the d.c. injection width"); - -// Base current - parameter real ibes = 1e-18 from [0:1] `P(spice:name="ibes" info="BE saturation current" unit="A" m:factor="yes"); - parameter real mbe = 1.0 from (0:10] `P(spice:name="mbe" info="BE non-ideality factor"); - parameter real ires = 0.0 from [0:1] `P(spice:name="ires" info="BE recombination saturation current" test:value="1e-16" unit="A" m:factor="yes"); - parameter real mre = 2.0 from (0:10] `P(spice:name="mre" info="BE recombination non-ideality factor"); - parameter real ibcs = 0.0 from [0:1] `P(spice:name="ibcs" info="BC saturation current" test:value="1e-16" unit="A" m:factor="yes"); - parameter real mbc = 1.0 from (0:10] `P(spice:name="mbc" info="BC non-ideality factor"); - -// BE depletion cap - parameter real cje0 = 1.0e-20 from (0:`INF) `P(spice:name="cje0" info="Zero-bias BE depletion capacitance" unit="F" test:value="2e-14" m:factor="yes"); - parameter real vde = 0.9 from (0:10] `P(spice:name="vde" info="BE built-in voltage" unit="V"); - parameter real ze = 0.5 from (0:1) `P(spice:name="ze" info="BE exponent factor"); - parameter real aje = 2.5 from [1:`INF) `P(spice:name="aje" info="Ratio of maximum to zero-bias value"); - -// MRG emitter charge parameters - parameter real vdedc = 0.9 from (0:10] `P(spice:name="vdedc" info="BE charge built-in voltage for d.c. transfer current" unit="V"); - parameter real zedc = 0.5 from (0:1) `P(spice:name="zedc" info="charge BE exponent factor for d.c. transfer current"); - parameter real ajedc = 2.5 from [1:`INF) `P(spice:name="ajedc" info="BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current"); - -// Transit time - parameter real t0 = 0.0 from [0:`INF) `P(spice:name="t0" info="low current transit time at Vbici=0" test:value="5e-12" unit="s"); - parameter real dt0h = 0.0 `P(spice:name="dt0h" info="Base width modulation contribution" test:value="2e-12" unit="s"); - parameter real tbvl = 0.0 from [0:`INF) `P(spice:name="tbvl" info="SCR width modulation contribution" test:value="4e-12" unit="s"); - parameter real tef0 = 0.0 from [0:`INF) `P(spice:name="tef0" info="Storage time in neutral emitter" test:value="1e-12" unit="s"); - parameter real gte = 1.0 from (0:10] `P(spice:name="gte" info="Exponent factor for emitter transit time"); - parameter real thcs = 0.0 from [0:`INF) `P(spice:name="thcs" info="Saturation time at high current densities" test:value="3e-11" unit="s"); - parameter real ahc = 0.1 from (0:10] `P(spice:name="ahc" info="Smoothing factor for current dependence"); - parameter real tr = 0.0 from [0:`INF) `P(spice:name="tr" info="Storage time at inverse operation" unit="s"); - -// Critical current - parameter real rci0 = 150 from (0:`INF) `P(spice:name="rci0" info="Low-field collector resistance under emitter" test:value="50" unit="Ohm" m:inverse_factor="yes"); - parameter real vlim = 0.5 from (0:10] `P(spice:name="vlim" info="Voltage dividing ohmic and satur.region" unit="V"); - parameter real vpt = 100.0 from (0:100] `P(spice:name="vpt" info="Punch-through voltage" test:value="10" unit="V" default="infinity"); - parameter real vces = 0.1 from [0:1] `P(spice:name="vces" info="Saturation voltage" unit="V"); - -// BC depletion cap intern - parameter real cjci0 = 1.0e-20 from (0:`INF) `P(spice:name="cjci0" info="Total zero-bias BC depletion capacitance" test:value="1e-15" unit="F" m:factor="yes"); - parameter real vdci = 0.7 from (0:10] `P(spice:name="vdci" info="BC built-in voltage" test:value="0.7" unit="V"); - parameter real zci = 0.333 from (0:1] `P(spice:name="zci" info="BC exponent factor" test:value="0.4"); - parameter real vptci = 100.0 from (0:100] `P(spice:name="vptci" info="Punch-through voltage of BC junction" test:value="50" unit="V"); - -// BC depletion cap extern - parameter real cjcx0 = 1.0e-20 from [0:`INF) `P(spice:name="cjcx0" info="Zero-bias external BC depletion capacitance" unit="F" test:value="1e-15" m:factor="yes"); - parameter real vdcx = 0.7 from (0:10] `P(spice:name="vdcx" info="External BC built-in voltage" unit="V"); - parameter real zcx = 0.333 from (0:1] `P(spice:name="zcx" info="External BC exponent factor"); - parameter real vptcx = 100.0 from (0:100] `P(spice:name="vptcx" info="Punch-through voltage" unit="V" test:value="5.0" default="infinity"); - parameter real fbc = 1.0 from [0:1] `P(spice:name="fbc" info="Split factor = Cjci0/Cjc0" test:value="0.5"); - -// Base resistance - parameter real rbi0 = 0.0 from [0:`INF) `P(spice:name="rbi0" info="Internal base resistance at zero-bias" test:value="100" unit="Ohm" m:inverse_factor="yes"); - parameter real vr0e = 2.5 from (0:`INF] `P(spice:name="vr0e" info="forward Early voltage (normalization volt.)" unit="V"); - parameter real vr0c = `INF from (0:`INF] `P(spice:name="vr0c" info="forward Early voltage (normalization volt.)" unit="V" default="infinity" test:value="25.0"); - parameter real fgeo = 0.656 from [0:`INF] `P(spice:name="fgeo" info="Geometry factor" test:value="0.73"); - -// Series resistances - parameter real rbx = 0.0 from [0:`INF) `P(spice:name="rbx" info="External base series resistance" test:value="8.8" unit="Ohm" m:inverse_factor="yes"); - parameter real rcx = 0.0 from [0:`INF) `P(spice:name="rcx" info="Emitter series resistance" test:value="12.5" unit="Ohm" m:inverse_factor="yes"); - parameter real re = 0.0 from [0:`INF) `P(spice:name="re" info="External collector series resistance" test:value="9.16" unit="Ohm" m:inverse_factor="yes"); - -// Substrate transfer current, diode current and cap - parameter real itss = 0.0 from [0:1.0] `P(spice:name="itss" info="Substrate transistor transfer saturation current" unit="A" test:value="1e-17" m:factor="yes"); - parameter real msf = 1.0 from (0:10] `P(spice:name="msf" info="Substrate transistor transfer current non-ideality factor"); - parameter real iscs = 0.0 from [0:1.0] `P(spice:name="iscs" info="SC saturation current" unit="A" test:value="1e-17" m:factor="yes"); - parameter real msc = 1.0 from (0:10] `P(spice:name="msc" info="SC non-ideality factor"); - parameter real cjs0 = 1.0e-20 from [0:`INF) `P(spice:name="cjs0" info="Zero-bias SC depletion capacitance" unit="F" test:value="1e-15" m:factor="yes"); - parameter real vds = 0.3 from (0:10] `P(spice:name="vds" info="SC built-in voltage" unit="V"); - parameter real zs = 0.3 from (0:1] `P(spice:name="zs" info="External SC exponent factor"); - parameter real vpts = 100.0 from (0:100] `P(spice:name="vpts" info="SC punch-through voltage" unit="V" test:value="5.0" default="infinity"); - -// Parasitic caps - parameter real cbcpar = 0.0 from [0:`INF) `P(spice:name="cbcpar" info="Collector-base isolation (overlap) capacitance" unit="F" m:factor="yes" test:value="1e-15"); - parameter real cbepar = 0.0 from [0:`INF) `P(spice:name="cbepar" info="Emitter-base oxide capacitance" unit="F" m:factor="yes" test:value="2e-15"); - -// BC avalanche current - parameter real eavl = 0.0 from [0:inf) `P(spice:name="eavl" info="Exponent factor" test:value="1e-14"); - parameter real kavl = 0.0 from [0:`INF) `P(spice:name="kavl" info="Prefactor" test:value="1.19"); - -// Flicker noise - parameter real kf = 0.0 from [0:`INF) `P(spice:name="kf" info="flicker noise coefficient" unit="M^(1-AF)"); - parameter real af = 2.0 from (0:10] `P(spice:name="af" info="flicker noise exponent factor"); - -// Temperature dependence - parameter real vgb = 1.2 from (0:10] `P(spice:name="vgb" info="Bandgap-voltage" unit="V" test:value="1.17"); - parameter real vge = 1.17 from (0:10] `P(spice:name="vge" info="Effective emitter bandgap-voltage" unit="V" test:value="1.07"); - parameter real vgc = 1.17 from (0:10] `P(spice:name="vgc" info="Effective collector bandgap-voltage" unit="V" test:value="1.14"); - parameter real vgs = 1.17 from (0:10] `P(spice:name="vgs" info="Effective substrate bandgap-voltage" unit="V" test:value="1.17"); - parameter real f1vg =-1.02377e-4 `P(spice:name="f1vg" info="Coefficient K1 in T-dependent bandgap equation" unit="V/K"); - parameter real f2vg = 4.3215e-4 `P(spice:name="f2vg" info="Coefficient K2 in T-dependent bandgap equation" unit="V/K"); - parameter real alt0 = 0.0 `P(spice:name="alt0" info="Frist-order TC of tf0" unit="1/K"); - parameter real kt0 = 0.0 `P(spice:name="kt0" info="Second-order TC of tf0" unit="1/K^2"); - parameter real zetact = 3.0 `P(spice:name="zetact" info="Exponent coefficient in transfer current temperature dependence" test:value="3.5"); - parameter real zetabet = 3.5 `P(spice:name="zetabet" info="Exponent coefficient in BE junction current temperature dependence" test:value="4.0"); - parameter real zetaci = 0.0 `P(spice:name="zetaci" info="TC of epi-collector diffusivity" test:value="1.6"); - parameter real alvs = 0.0 `P(spice:name="alvs" info="Relative TC of satur.drift velocity" unit="1/K" test:value="1e-3"); - parameter real alces = 0.0 `P(spice:name="alces" info="Relative TC of vces" unit="1/K" test:value="4e-4"); - parameter real zetarbi = 0.0 `P(spice:name="zetarbi" info="TC of internal base resistance" test:value="0.6"); - parameter real zetarbx = 0.0 `P(spice:name="zetarbx" info="TC of external base resistance" test:value="0.2"); - parameter real zetarcx = 0.0 `P(spice:name="zetarcx" info="TC of external collector resistance" test:value="0.2"); - parameter real zetare = 0.0 `P(spice:name="zetare" info="TC of emitter resistances"); - parameter real zetaiqf = 0.0 `P(spice:name="zetiqf" info="TC of iqf (bandgap coefficient of zero bias hole charge)"); - parameter real alkav = 0.0 `P(spice:name="alkav" info="TC of avalanche prefactor, identical to alfav of Hicum/L2" unit="1/K"); - parameter real aleav = 0.0 `P(spice:name="aleav" info="TC of avalanche exponential factor, identical to alqav of Hicum/L2" unit="1/K"); - -// Self-heating - parameter integer flsh = 0 from [0:2] `P(spice:name="flsh" info="Flag for self-heating calculation" test:value="2"); - parameter real rth = 0.0 from [0:`INF) `P(spice:name="rth" info="Thermal resistance" test:value="200.0" unit="K/W" m:inverse_factor="yes"); - parameter real zetarth = 0.0 `P(spice:name="zetarth" info="Exponent factor for temperature dependent thermal resistance" test:value="0.0"); - parameter real cth = 0.0 from [0:`INF) `P(spice:name="cth" info="Thermal capacitance" test:value="0.1" unit="Ws/K" m:factor="yes"); - -// Transistor type - parameter integer npn = 1 from [0:1] `P(spice:isflag="yes" info="model type flag for npn" ); - parameter integer pnp = 0 from [0:1] `P(info="model type flag for pnp" ); - -//Circuit simulator specific parameters - parameter real tnom = 27 `P(spice:name="tnom" info="Temperature for which parameters are valid" unit="C"); - parameter real dt = 0.0 `P(spice:name="dt" type="instance" info="Temperature change for particular transistor" unit="K"); - -//MRG Temperature dependence - parameter real delte = 0.0 from [0:`INF] `P(spice:name="delte" info="Emitter part coefficient of the zero bias hole charge temperature variation" test:value="3"); - parameter real deltc = 0.0 from [0:`INF] `P(spice:name="deltc" info="Collector part coefficient of the zero bias hole charge temperature variation" test:value="3"); - parameter real zetaver = 0.0 `P(spice:name="zetaver" info="Bandgap TC parameter of ver"); - parameter real zetavef = 0.0 `P(spice:name="zetavef" info="Bandgap TC parameter of vef"); - parameter real ibhrec = 0.0 from [0:1] `P(spice:name="ibhrec" info="Specific recombination current at the BC barrier for high forward injection" test:value="1e-6" unit="A" m:factor="yes"); - -// Declaration of the variables: begin - - real HICUMtype `P(spice:name="type" info="Device type from npn or pnp flags" unit="no" ask="yes"); - - // QCJMOD - real cj0,vd,z,aj; - real zr,vp; - real cmax,cr,ve; - real ee1,ez,ezr,vdj1,vdj2,ex1,vr,vj1,vj2,vj4; - real qj1,qj2,qj3,qjf; - - //Cjfun *** VT, removed: BA - real cjf; - - //cjtfun *** tnom,VT,mg,vt0, removed: BA - real vg; - real vdj0,vdjt,cj0_t,vd_t,aj_t; - - // temperature and drift - real VT,Tamb,Tdev,Tnom,dT,qtt0,ln_qtt0; - real vde_t,vdci_t,vdcx_t,vds_t,vdedc_t; - real is_t,ires_t,ibes_t,ibcs_t,iqf_t; - real itss_t,iscs_t,cje0_t,cjci0_t,cjcx0_t, cje0_dc_t, cje0_dc; - real cjs0_t,rci0_t,vlim_t; - real vces_t,thcs_t,tef0_t,rbi0_t; - real rbx_t,rcx_t,re_t,t0_t,eavl_t,kavl_t; - real aje_t,ajedc_t; - - // bc charge and cap - real qjci `P(ask="yes" info="B-C internal junction charge" unit="C"); - real qjcx,qjcii,cjcii,qjcxi,qjciii; //cjcx - real cjci0_t_ii,cjcx0_t_ii,cjcx0_t_i,v_j; - - // be junction - real qjei `P(ask="yes" info="B-E internal junction charge" unit="C"); - real cjei `P(ask="yes" info="B-E internal junction capacitance" unit="F"); - real vf,vj,x,y,e1,e2; - - // transfer and internal base current - real cc,qj_2,qj,facl; - real tf0,ickf,ickr,itfi,itri,qm, qml, qmh; - real qpt,itf,itr, qpt_l, qpt_h, denom_iqf; - real it `P(ask="yes" info="Transfer Current" unit="A"); - real ibe,ire,ibi; - real itfl,itrl,al,s3l,wl,d_qfh; - - // be diffusion charge - real qf,qf0,dqfh,dqef; - real dtef,dtfh,tf,ick; - real vc,vceff,s3,w,a,tww, aa, a1, a2; - - // bc diffusion charge - real qr; - - // avalanche current source - real v_bord,a_iavl,lncc; - - // base resistance - real rb,eta,rbi,qje,Qz_nom,fQz; - - // substrate transistor, diode and cap - real qjs,HSa,HSb,HSI_Tsu,HSUM; - - // self heating - real pterm; - real rth_t, x_t; - - // new for temperature dependence - real mg,zetabci,zetasct,zetatef,avs; - real k1,k2,vgbe,vgbc,vgsc,dvg; - real xvf,xvf2,dvj,uvc,vt0; - - // noise - real flicker_Pwr,fourkt,twoq; - - // LIN_EXP - real le,arg,le1,arg1,le2,arg2; - - //HICDIO - real IS,IST,UM1,U,Iz,DIOY; - - // branch voltages - real Vbci,Vbici,Vbiei,Vciei,Vsci,Veie,Vbbi,Vcic,Vbe,Vrth; - - //Output to be seen - real ijbc `P(ask="yes" info="Base-collector diode current" unit="A"); - real iavl `P(ask="yes" info="Avalanche current" unit="A"); - real ijsc `P(ask="yes" info="Substrate-collector diode current" unit="A"); - real Ieei `P(ask="yes" info="Current through external to internal emitter node" unit="A"); - real Icci `P(ask="yes" info="Current through external to internal collector node" unit="A"); - real Ibbi `P(ask="yes" info="Current through external to internal base node" unit="A"); - real Ibici `P(ask="yes" info="Base-collector diode current minus the avalanche current" unit="A"); - real ijbe `P(ask="yes" info="Base-emitter diode current" unit="A"); - - real Qbci,Qbe,Qbici,Qbiei; - - //MRG - real iqfh_t,iqr_t,iqfe_t,ver_t,vef_t,mrgt,expiqf; - real cT_cT0,Dfie,Gjei,Dfic,Gjci,qjcidc,qmB,qmBw,ibrec; - real b_q,favl,favl_t,qavl,qavl_t,qjedc,qmE,qm0,occ; - real a_bpt,expv,VTr,sqx,Vbiei_l; -//Declaration of the variables: end - -// -//======================== calculation of the transistor =================== -// - -analog begin - -// assign voltages with regard to transistor type - - `INITIAL_MODEL - begin - if (`PGIVEN(npn)) - HICUMtype = `NPN; - else if (`PGIVEN(pnp)) - HICUMtype = `PNP; - else - HICUMtype = `NPN; - end - - Vbci = HICUMtype*V(br_bci); - Vbici = HICUMtype*V(br_bici); - Vbiei = HICUMtype*V(br_biei); - Vciei = HICUMtype*V(br_ciei); - Vsci = HICUMtype*V(br_sci); - Veie = V(br_eie_v); - Vcic = V(br_cic_v); - Vbbi = V(br_bbi_v); - Vbe = HICUMtype*V(br_be); - Vrth = V(br_sht); - -// -// temperature and resulting parameter drift -// - - Tnom = tnom+273.15; - Tamb = $temperature; - Tdev = Tamb+dt+Vrth; - -// Limit temperature to avoid FPE's in equations - if(Tdev < `TMIN + 273.15) begin - Tdev = `TMIN + 273.15; - end else begin - if (Tdev > `TMAX + 273.15) begin - Tdev = `TMAX + 273.15; - end - end - - vt0 = `P_K*Tnom /`P_Q; - VT = `P_K*Tdev /`P_Q; - dT = Tdev-Tnom; - qtt0 = Tdev/Tnom; - ln_qtt0 = ln(qtt0); - k1 = f1vg*Tnom; - k2 = f2vg*Tnom+k1*ln(Tnom); - avs = alvs*Tnom; - vgbe = (vgb+vge)/2; - vgbc = (vgb+vgc)/2; - vgsc = (vgs+vgc)/2; - mg = 3-`P_Q*f1vg/`P_K; - zetabci = mg+1-zetaci; - zetasct = mg-1.5; //+1-m_upS with m_upS=2.5 - //MRG redefined is_t = is*exp(zetact*ln_qtt0+vgb/VT*(qtt0-1)); - ibes_t = ibes*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); - ires_t = ires*exp(0.5*mg*ln_qtt0+0.5*vgbe/VT*(qtt0-1)); - ibcs_t = ibcs*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); - itss_t = itss*exp(zetasct*ln_qtt0+vgc/VT*(qtt0-1)); - iscs_t = iscs*exp(zetasct*ln_qtt0+vgs/VT*(qtt0-1)); - //MRG: - mrgt = 1-Tnom/Tdev; - expiqf = exp(mrgt*zetaiqf); - iqf_t = iqf*expiqf; - iqr_t = iqr*expiqf; - iqfh_t = iqfh*expiqf; - iqfe_t = iqfe*expiqf; - ver_t = ver*exp(mrgt*zetaver); - vef_t = vef*exp(mrgt*zetavef); - is_t = is*exp(zetact*ln_qtt0+(vgb/vt0-zetaiqf)*mrgt); - - `TMPHICJ(cje0,vde,ze,vgbe,cje0_t,vde_t) - aje_t = aje*vde_t/vde; - `TMPHICJ(cjci0,vdci,zci,vgbc,cjci0_t,vdci_t) - `TMPHICJ(cjcx0,vdcx,zcx,vgbc,cjcx0_t,vdcx_t) - `TMPHICJ(cjs0,vds,zs,vgsc,cjs0_t,vds_t) - //MRG redefined iqf_t = iqf*exp(zetaiqf*ln_qtt0); - rci0_t = rci0*exp(zetaci*ln_qtt0); - vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); - vces_t = vces*(1+alces*dT); - t0_t = t0*(1+alt0*dT+kt0*dT*dT); - thcs_t = thcs*exp((zetaci-1)*ln_qtt0); - zetatef = zetabet-zetact-0.5; - dvg = vgb-vge; - tef0_t = tef0*exp(zetatef*ln_qtt0-dvg/VT*(qtt0-1)); - rbx_t = rbx*exp(zetarbx*ln_qtt0); - rcx_t = rcx*exp(zetarcx*ln_qtt0); - rbi0_t = rbi0*exp(zetarbi*ln_qtt0); - re_t = re*exp(zetare*ln_qtt0); - //eavl_t = eavl*exp(aleav*dT); - //kavl_t = kavl*exp(alkav*dT); - //introduce HL2 consistent temperature scaling - favl=kavl/vdci; - qavl=eavl*(cjci0*vdci); - favl_t=favl*exp(alkav*dT); - qavl_t=qavl*exp(aleav*dT); - kavl_t=favl_t*vdci_t; - eavl_t=qavl_t/(cjci0_t*vdci_t); - - //Temperature dependence of Thermal resistance - if (zetarth!=0) begin - rth_t = rth*exp(zetarth*ln(Tdev/Tnom)); - end else begin - rth_t=rth; - end - -// -// Calculation of intrinsic transistor elements -// - -// BC charge and cap (internal and external) - -// The cjcx0 value is used to switch between one (cjcx0=0) and two bc parameter sets -// 1. For one parameter set only the internal bc set is partitioned by fbc -// 2. For two independent sets only the external set is partitioned by fbc - if (cjcx0_t==0) begin - cjci0_t_ii = cjci0_t*fbc; // zero bias internal portion - qjcxi = 0; - cjcx0_t_i = cjci0_t*(1-fbc); // zero bias external portion - `HICJQ(Vbci,cjcx0_t_i,vdci_t,zci,vptci,qjcx) - end else begin - cjci0_t_ii = cjci0_t; // zero bias internal portion - cjcx0_t_ii = cjcx0_t*fbc; - `HICJQ(Vbici,cjcx0_t_ii,vdcx_t,zcx,vptcx,qjcxi) - cjcx0_t_i = cjcx0_t*(1-fbc); // zero bias external portion - `HICJQ(Vbci,cjcx0_t_i,vdcx_t,zcx,vptcx,qjcx) - end - `HICJQ(Vbici,cjci0_t_ii,vdci_t,zci,vptci,qjci) - qjcii = qjci+qjcxi; - -//Internal bc cap without punch through for cc, bug in original code fixed - `QCMODF(Vbici,1,vdci_t,zci,2.4,occ) - cc=1/occ; - // Minority charge transit time - tf0 = t0_t+dt0h*(cc-1)+tbvl*(occ-1); - - `TMPHICJ(1,vdedc,zedc,vgbe,cT_cT0,vdedc_t); - ajedc_t = ajedc*vdedc_t/vdedc; - // Gjei limiting, a_bpt = 0.05; - a_bpt = 0.05; - if (Tdevv_bord) begin - a_iavl = kavl_t/vdci_t*exp(-cc); - iavl = itf*a_iavl*(v_bord+(1+cc)*(vdci_t-Vbici-v_bord)); - end else begin - lncc = ln(1/cc); - iavl = kavl_t*itf*exp(-1/zci*lncc-eavl_t*exp((1/zci-1)*lncc)); - end - end else begin - iavl = 0; - end - -// -// Additional elements for external transistor -// - `QJMODF(Vbiei,cje0_t,vde_t,ze,aje_t,qjei) - qje = qjei/cje0_t; -// Normalized internal BC charge - if(cjci0_t_ii > 0.0) begin - qjci = qjci/cjci0_t_ii; - end else begin - qjci = 0.0; - end - -// Base resistance - if(rbi0_t > 0.0) begin : HICRBI - // Conductivity modulation with hyperbolic smoothing - Qz_nom = 1+qje/vr0e+qjci/vr0c+qm0; - fQz = 0.5*(Qz_nom+sqrt(Qz_nom*Qz_nom+0.01)); - rbi = rbi0_t/fQz; - // Emitter current crowding - if (ibi > 0.0) begin - eta = fgeo*rbi*ibi/VT; - if (eta < 1e-6) begin - rbi = rbi*(1-0.5*eta); - end else begin - rbi = rbi*ln(eta+1)/eta; - end - end - end else begin - rbi = 0.0; - end - // Total base resistance - rb = rbi+rbx_t; - -// Parasitic substrate transistor transfer current - if(itss > 0.0) begin : Sub_Transfer - HSUM = msf*VT; - HSa = limexp(Vbci/HSUM); - HSb = limexp(Vsci/HSUM); - HSI_Tsu = itss_t*(HSa-HSb); - end else begin - HSI_Tsu = 0.0; - end - -// Substrate diode and cap and charge - `HICDIO(iscs,iscs_t,msc,Vsci,ijsc) - `HICJQ(Vsci,cjs0_t,vds_t,zs,vpts,qjs) - -// Self heating - if (flsh == 1 && rth_t >= `MIN_R) begin - pterm = it*Vciei+iavl*(vdci_t-Vbici); - end else if (flsh == 2 && rth_t >= `MIN_R) begin - pterm = Vciei*it + (vdci_t-Vbici)*iavl + ijbe*Vbiei + ijbc*Vbici + ijsc*Vsci; - if (rb >= `MIN_R) begin - pterm = pterm + Vbbi*Vbbi/rb; - end - if (re_t >= `MIN_R) begin - pterm = pterm + Veie*Veie/re_t; - end - if (rcx_t >= `MIN_R) begin - pterm = pterm + Vcic*Vcic/rcx_t; - end - end - -// -// Compute branch sources -// - - Ibici = ijbc - iavl; - - Qbci = cbcpar*Vbci; - Qbe = cbepar*Vbe; - Qbici = qjcii+qr; - Qbiei = qjei+qf; - - ijsc = HICUMtype*ijsc; - qjs = HICUMtype*qjs; - qjcx = HICUMtype*qjcx; - Qbci = HICUMtype*Qbci; - Qbe = HICUMtype*Qbe; - - Ibici = HICUMtype*Ibici; - Qbici = HICUMtype*Qbici; - ijbe = HICUMtype*ijbe; - Qbiei = HICUMtype*Qbiei; - it = HICUMtype*it; - -// -// Define branch sources -// - I(br_biei) <+ `Gmin*V(br_biei); - I(br_bici) <+ `Gmin*V(br_bici); - - I(br_bs) <+ HSI_Tsu; - I(br_sci) <+ ijsc `P(spectre:gmin="add" spectre:pwl_passive="1e10"); - I(br_sci) <+ ddt(qjs); - I(br_bci) <+ ddt(qjcx); - I(br_bci) <+ ddt(Qbci); - I(br_be) <+ ddt(Qbe); - if (re >= `MIN_R) begin - I(br_eie_i) <+ Veie/re_t `P(spectre:gmin="add"); - end else begin -// V(br_eie_v) <+ 0.0; - I(br_eie_i) <+ V(br_eie_v)/1e-6; - end - if (rcx >= `MIN_R) begin - I(br_cic_i) <+ Vcic/rcx_t `P(spectre:gmin="add"); - end else begin -// V(br_cic_v) <+ 0.0; - I(br_cic_i) <+ V(br_cic_v)/1e-6; - end - if (rbi0 >= `MIN_R || rbx >= `MIN_R) begin - I(br_bbi_i) <+ Vbbi/rb `P(spectre:gmin="add"); - end else begin -// V(br_bbi_v) <+ 0.0; - I(br_bbi_i) <+ V(br_bbi_v)/1e-6; - end - I(br_bici) <+ Ibici `P(spectre:gmin="add" spectre:pwl_sat_current="IMAX" spectre:pwl_sat_cond="imax/0.025" spectre:pwl_rev_current="imax" spectre:pwl_rev_cond="IMAX/0.025"); - I(br_bici) <+ ddt(Qbici); - I(br_biei) <+ ijbe `P(spectre:gmin="add" spectre:pwl_fwd_current="IBEIS*exp(25.0)" spectre:pwl_fwd_node="bi" spectre:pwl_fwd_cond="IBEIS*exp(25.0)/0.025" spectre:pwl_sat_current="IMAX" spectre:pwl_sat_cond="IMAX/0.025" spectre:pwl_passive="1e10"); - I(br_biei) <+ ddt(Qbiei); - I(br_ciei) <+ it `P(spectre:pwl_fwd_current="IS*exp(25.0)" spectre:pwl_fwd_node="bi" spectre:pwl_fwd_cond="IS*exp(25.0)/0.025" spectre:pwl_rev_current="IMAX" spectre:pwl_rev_cond="IMAX/0.025" spectre:pwl_passive="1e10"); - - // Following code is an intermediate solution: - // ****************************************** - if(flsh == 0 || rth < `MIN_R) begin - I(br_sht) <+ Vrth/`MIN_R; - end else begin - I(br_sht) <+ Vrth/rth_t-pterm `P(spectre:gmin="add"); - I(br_sht) <+ ddt(cth*Vrth); - end - // ****************************************** - // For simulators having no problem with V(br_sht) <+ 0.0 - // with external thermal node, follwing code may be used. - // This external thermal node should remain accessible. - // ******************************************** - - //if(flsh == 0 || rth < `MIN_R) begin - // V(br_sht) <+ 0.0; - //end else begin - // I(br_sht) <+ Vrth/rth_t-pterm `P(spectre:gmin="add"); - // I(br_sht) <+ ddt(cth*Vrth); - //end - // ******************************************** - -// Noise sources -// Thermal noise - fourkt = 4.0 * `P_K * Tdev; - if(rbx >= `MIN_R || rbi0 >= `MIN_R) begin - I(br_bbi_i) <+ white_noise(fourkt/rb); - end - if(rcx >= `MIN_R) begin - I(br_cic_i) <+ white_noise(fourkt/rcx_t); - end - if(re >= `MIN_R) begin - I(br_eie_i) <+ white_noise(fourkt/re_t); - end - -// Shot noise - twoq = 2.0 * `P_Q; - I(br_biei) <+ white_noise(twoq*ijbe); - I(br_ciei) <+ white_noise(twoq*it); - -// Flicker noise - flicker_Pwr = kf*pow(ijbe,af); - I(br_biei) <+ flicker_noise(flicker_Pwr,1.0); - -end // analog -endmodule diff --git a/qucs-core/src/components/verilog/hicumL0V1p3.va b/qucs-core/src/components/verilog/hicumL0V1p3.va deleted file mode 100644 index 8f4ce5815d..0000000000 --- a/qucs-core/src/components/verilog/hicumL0V1p3.va +++ /dev/null @@ -1,1059 +0,0 @@ -//**************** COPYRIGHT (Originator: Michael Schroter)**************** -// No part of this code may be reproduced or used in any form without -// written permission from the originator - -// HICUM Level_0 Version_1.3: A Verilog-A description -// (A simplified version of HICUM Level2 model for BJT) -// ## It is modified after the first version of HICUM/L0 code ## - -// Minor code related changes -// 01/11: Corrected SPICE name for AHQ and ZETAIQF. Implemented a gmin between nodes CI and EI. -// qj is now limited to positive values to improve convergence a negative bias. -// Resolved a convergence issue for cc at calculation of voltage dependence of t0. -// 01/09: Introduction of temporary dc capacitance variable CJE_DC to call the procedure with -// the AC and DC parameter set and assign an AC and DC result to its output variables -// 01/09: Ranges of ZE & ZEDC have been modified to a new range (0:1) from the old range (0:1] -// 12/08: gmin declaration by L. Lemaitre. -// 12/08: rth has been used instead of rth_t (dynamic variable) in the corresponding if statement -// 12/08: Macro `QJMODF has been used to compute AC as well as DC charge with corresponding AC and DC variables respectively -// 11/08: Conditional statement for calculating normalized minority charge to avoid overflow at TFH=0 -// 11/08: Range of AHQ has been modified to a new range [-0.9:10] from the old range [0:10] -// 03/08: Quick Fix: Default value of TFH has been changed from infinity to zero and modification has been done to -// the default value limits to [0, inf) to include zero -// 12/06: Upper limit of FGEO is changed to infinity -// 06/06: Thermal node "tnode" set as external -// Flag FLSH introduced for controlling Self-heating calculation -// all if-else blocks marked with begin-end -// all series resistors and RTH are allowed to have a minimum value MIN_R -// 07/06: QCJMOD deleted, QJMODF introduced along with with HICJQ -// ddx() operator used with QJMOD and QJMODF wherever needed -// aj is kept at 2.4 except BE depletion charge -// Substrate transistor transfer current added. -// Gmin added to (bi,ei) and (bi,ci) branches. -// hyperbolic smoothing used in rbi computation to avoid devide-by-zero. - -// ********************************************************************************* -// 06/06: Comment on NODE COLLAPSING: -// Presently this verilog code permits a minimum of 1 milli-Ohm resistance for any -// series resistance as well as for thermal resistance RTH. If any of the resistance -// values drops below this minimum value, the corresponding nodes are shorted with -// zero voltage contribution. We want the model compilers/simulators deal this -// situation in such a manner that the corresponding node is COLLAPSED. -// We expect that the simulators should permit current contribution statement -// for any branch with resistance value more than (or equal to) 1 milli-Ohm without -// any convergence problem. In fact, we wish NOT to have to use a voltage contribution -// statement in our Verilog code, except as an indication for the model compiler/simulator -// to interprete a zero branch voltage as NODE-COLLAPSING action. -// ********************************************************************************** - -//***************************************************** -//***************************************************** -// 08/04:(Modification by Cornelia Thiele) -// New expression for the normalized hole charge qpt and the model parameter AHQ is inserted -// The reverse Early-Effect VER is reintroduced -// A temperature dependent modeling of IQF using the model parameter ZETAIQF is included - -//***************************************************** -//***************************************************** -// 11/08: Modification done at TUD -// 3 more parameters VDEDC, ZEDC, AJEDC have been introduced for DC depletion charge -// Flag FIQF has been introduced to introduce voltage dependence in the base related critical current -// ZETARTH has been introduced for temperature dependent thermal resistance -//***************************************************** - -//***************************************************** -//***************************************************** -// 01/2011: Modification done at TUD -// Third order polynomial is solved for transfer current. Can be turned on by IT_MOD=1. -// Added voltage dependent Reverse Early voltage. Parameter aver describes voltage dependence. -// Parameters ZETAVER, ZETAVGBE, VGBE describes temperature dependence of VER and IQF. -// Added temperature dependence for IQFH and TFH, ALIQFH and KIQFH is used to model a second order temperature model. -// Parameter TEF_TEMP=0 turns temperature dependence for TEF0 off. -//***************************************************** - -//Default simulator: Spectre - -`ifdef insideADMS - `define P(p) (*p*) - `define PGIVEN(p) $given(p) - `define INITIAL_MODEL @(initial_model) -`else - `define P(p) - `define PGIVEN(p) p - `define INITIAL_MODEL @(initial_step) -`endif - - -//ADS -`include "constants.vams" -`include "disciplines.vams" -//`include "compact.vams" - -//Spectre -//`include "constants.h" -//`include "discipline.h" - - -`define NPN +1 -`define PNP -1 - -`define VPT_thresh 1.0e2 -`define EXPLIM 80.0 -`define INF 1.0e6 -`define TMAX 326.85 -`define TMIN -100.00 -`define MIN_R 0.001 -`define Gmin 1.0e-12 -//`define Gmin $simparam("gmin") //suggested by L.L -//`define Gmin $simparam("gmin",1e-12) //suggested by L.L - -`define QCMODF(vj,cj0,vd,z,aj,cjf)\ - if(cj0 > 0.0) begin\ - vf = vd*(1.0-exp(-ln(aj)/z));\ - xvf = (vf-vj)/VT;\ - xvf2 = sqrt(xvf*xvf+1.921812);\ - v_j = vf-VT*(xvf+xvf2)*0.5;\ - dvj = 0.5*(xvf+xvf2)/xvf2;\ - cjf = cj0*exp(-z*ln(1-v_j/vd))*dvj+aj*cj0*(1-dvj);\ - end else begin\ - cjf = 0.0;\ - end - -// DEPLETION CHARGE CALCULATION -// Hyperbolic smoothing used; no punch-through -`define QJMODF(vj,cj0,vd,z,aj,qjf)\ - if(cj0 > 0.0) begin\ - vf = vd*(1.0-exp(-ln(aj)/z));\ - xvf = (vf-vj)/VT;\ - xvf2 = sqrt(xvf*xvf+1.921812);\ - v_j = vf-VT*(xvf+xvf2)*0.5;\ - x = 1.0-z;\ - y = 1.0-exp(x*ln(1.0-v_j/vd));\ - qjf = cj0*vd*y/x+aj*cj0*(vj-v_j);\ - end else begin\ - qjf = 0.00;\ - end - - -// Depletion Charge : with punch through -`define QJMOD(vj,cj0,vd,z,vpt,aj,qjf)\ - if(cj0 > 0.0) begin\ - zr = z/4.0;\ - vp = vpt-vd;\ - vf = vd*(1.0-exp(-ln(aj)/z));\ - cmax = aj*cj0;\ - cr = cj0*exp((z-zr)*ln(vd/vpt));\ - a = VT;\ - ve = (vf-vj)/a;\ - if (ve <= `EXPLIM) begin\ - ex1 = exp(ve);\ - ee1 = 1.0+ex1;\ - vj1 = vf-a*ln(ee1);\ - end else begin\ - vj1 = vj;\ - end\ - a = 0.1*vp+4.0*VT;\ - vr = (vp+vj1)/a;\ - if (vr <= `EXPLIM) begin\ - ex1 = exp(vr);\ - ee1 = 1.0+ex1;\ - vj2 = -vp+a*ln(ee1);\ - end else begin\ - vj2 = vj1;\ - end\ - vj4 = vj-vj1;\ - ez = 1.0-z;\ - ezr = 1.0-zr;\ - vdj1 = ln(1.0-vj1/vd);\ - vdj2 = ln(1.0-vj2/vd);\ - qj1 = cj0*(1.0-exp(vdj2*ez))/ez;\ - qj2 = cr*(1.0-exp(vdj1*ezr))/ezr;\ - qj3 = cr*(1.0-exp(vdj2*ezr))/ezr;\ - qjf = (qj1+qj2-qj3)*vd+cmax*vj4;\ - end else begin\ - qjf = 0.0;\ - end - - -// DEPLETION CHARGE CALCULATION SELECTOR: -// Dependent on junction punch-through voltage -// Important for collector related junctions -`define HICJQ(vj,cj0,vd,z,vpt,qjf)\ - if(vpt < `VPT_thresh) begin\ - `QJMOD(vj,cj0,vd,z,vpt,2.4,qjf)\ - end else begin\ - `QJMODF(vj,cj0,vd,z,2.4,qjf)\ - end - -//Temperature dependence of depletion capacitance parameters -`define TMPHICJ(cj0,vd,z,vg,cj0_t,vd_t)\ - arg = 0.5*vd/vt0;\ - vdj0 = 2*vt0*ln(exp(arg)-exp(-arg));\ - vdjt = vdj0*qtt0+vg*(1-qtt0)-mg*VT*ln_qtt0;\ - vd_t = vdjt+2*VT*ln(0.5*(1+sqrt(1+4*exp(-vdjt/VT))));\ - cj0_t = cj0*exp(z*ln(vd/vd_t)); - - -//Limiting exponential -`define LIN_EXP(le, arg)\ - if(arg > 80) begin\ - le = (1 + ((arg) - 80));\ - arg = 80;\ - end else begin\ - le=1;\ - end\ - le = le*limexp(arg); - -// conductance not calculated -// INPUT: -// IS, IST : saturation currents (model parameter related) -// UM1 : ideality factor -// U : branch voltage -// IMPLICIT INPUT: -// VT : thermal voltage -// OUTPUT: -// Iz : diode current -`define HICDIO(IS,IST,UM1,U,Iz)\ - DIOY = U/(UM1*VT);\ - if (IS > 0.0) begin\ - if (DIOY > 80) begin\ - le = (1 + ((DIOY) - 80));\ - DIOY = 80;\ - end else begin\ - le = 1;\ - end\ - le = le*limexp(DIOY);\ - Iz = IST*(le-1.0);\ - if(DIOY <= -14.0) begin\ - Iz = -IST;\ - end\ - end else begin\ - Iz = 0.0;\ - end - -`define qpt_mod(qpt_mod,qlow)\ - o3 = 1.0/3;\ - p2_a = -2*qj_2;\ - if (iqf == `INF && iqfh == `INF) begin\ - p2_b = 0;\ - end else begin\ - p2_b = -(qlow);\ - end\ - p2_c = -itfi*itfi/ick*tfh_t/iqfh_t;\ - tmp = p2_a*p2_a;\ - p2_p = p2_b-tmp*o3;\ - p2_q = 2*p2_a*tmp/27-p2_a*p2_b*o3+p2_c;\ - p2_D = p2_q*p2_q*0.25+p2_p*p2_p*p2_p/27;\ - if (abs(p2_D) < 1e-10) begin\ - q_p3 = 3*p2_q/p2_p-p2_a*o3;\ - end else if (p2_D > 0) begin\ - tmp2 = -p2_q*0.5;\ - tmp3 = sqrt(p2_D);\ - tmp = tmp2+tmp3;\ - if (tmp > 0) begin\ - p2_u = exp(o3*ln(tmp));\ - end else begin\ - p2_u = -exp(o3*ln(-tmp));\ - end\ - tmp = tmp2-tmp3;\ - if (tmp > 0) begin\ - p2_v = exp(o3*ln(tmp));\ - end else begin\ - p2_v = -exp(o3*ln(-tmp));\ - end\ - q_p3 = (p2_u+p2_v)-p2_a*o3;\ - end else begin\ - tmp = -p2_q*0.5*sqrt(-27.0/(p2_p*p2_p*p2_p));\ - tmp2 = tmp*tmp;\ - if (tmp >= 0) begin\ - tmp = `M_PI/2-atan(sqrt(tmp2/(1-tmp2)));\ - end else begin\ - tmp = `M_PI/2+atan(sqrt(tmp2/(1-tmp2)));\ - end\ - tmp = sqrt(-4*p2_p*o3)*cos(o3*tmp)-p2_a*o3;\ - q_p3 = tmp;\ - end\ - qpt_mod = q_p3;\ - -module hicumL0V1p3 (c,b,e,s,tnode); - - -//Node definitions - - inout c,b,e,s,tnode; - electrical c `P(info="external collector node"); - electrical b `P(info="external base node"); - electrical e `P(info="external emitter node"); - electrical s `P(info="external substrate node"); - electrical ci `P(info="internal collector node"); - electrical bi `P(info="internal base node"); - electrical ei `P(info="internal emitter node"); - electrical tnode `P(info="local temperature rise node"); - - - //Branch definitions - branch (ci,c) br_cic_i; - branch (ci,c) br_cic_v; - branch (ei,e) br_eie_i; - branch (ei,e) br_eie_v; - branch (bi,ei) br_biei; - branch (bi,ci) br_bici; - branch (ci,ei) br_ciei; - branch (b,bi) br_bbi_i; - branch (b,bi) br_bbi_v; - branch (b,e) br_be; - branch (b,ci) br_bci; - branch (b,s) br_bs; - branch (s,ci) br_sci; - branch (tnode ) br_sht; - -// -// Parameter initialization with default values - -// Collector current - parameter real is = 1.0e-16 from [0:1] `P(spice:name="is" info="(Modified) saturation current" m:factor="yes" unit="A"); - parameter integer it_mod = 0 `P(spice:name="it_mod" info="Flag for using third order solution for transfer current"); - parameter real mcf = 1.00 from (0:10] `P(spice:name="mcf" info="Non-ideality coefficient of forward collector current"); - parameter real mcr = 1.00 from (0:10] `P(spice:name="mcr" info="Non-ideality coefficient of reverse collector current"); - parameter real vef = `INF from (0:`INF] `P(spice:name="vef" info="forward Early voltage (normalization volt.)" unit="V" default:value="infinity"); - parameter real ver = `INF from (0:`INF] `P(spice:name="ver" info="reverse Early voltage (normalization volt.)" unit="V" default:value="infinity"); - parameter real aver = 0.0 from [0:100] `P(spice:name="aver" info="bias dependence for reverse Early voltage"); - parameter real iqf = `INF from (0:`INF] `P(spice:name="iqf" info="forward d.c. high-injection roll-off current" unit="A" m:factor="yes" default:value="infinity"); - - parameter real fiqf = 0 from [0:1] `P(spice:name="fiqf" info="flag for turning on base related critical current" default:value="zero"); - - parameter real iqr = `INF from (0:`INF] `P(spice:name="iqr" info="inverse d.c. high-injection roll-off current" unit="A" m:factor="yes" default:value="infinity"); - parameter real iqfh = `INF from (0:`INF] `P(spice:name="iqfh" info="high-injection correction current" unit="A" m:factor="yes"); - parameter real tfh = 0.0 from [0:`INF) `P(spice:name="tfh" info="high-injection correction factor" test:value="2e-9" m:factor="yes"); - parameter real ahq = 0 from [-0.9:`INF] `P(spice:name="ahq" info="Smoothing factor for the d.c. injection width"); - - // Base current - parameter real ibes = 1e-18 from [0:1] `P(spice:name="ibes" info="BE saturation current" unit="A" m:factor="yes"); - parameter real mbe = 1.0 from (0:10] `P(spice:name="mbe" info="BE non-ideality factor"); - parameter real ires = 0.0 from [0:1] `P(spice:name="ires" info="BE recombination saturation current" test:value="1e-16" unit="A" m:factor="yes"); - parameter real mre = 2.0 from (0:10] `P(spice:name="mre" info="BE recombination non-ideality factor"); - parameter real ibcs = 0.0 from [0:1] `P(spice:name="ibcs" info="BC saturation current" test:value="1e-16" unit="A" m:factor="yes"); - parameter real mbc = 1.0 from (0:10] `P(spice:name="mbc" info="BC non-ideality factor"); - - // BE depletion cap - parameter real cje0 = 1.0e-20 from (0:`INF) `P(spice:name="cje0" info="Zero-bias BE depletion capacitance" unit="F" test:value="2e-14" m:factor="yes"); - parameter real vde = 0.9 from (0:10] `P(spice:name="vde" info="BE built-in voltage" unit="V"); - parameter real ze = 0.5 from (0:1) `P(spice:name="ze" info="BE exponent factor"); - parameter real aje = 2.5 from [1:`INF) `P(spice:name="aje" info="Ratio of maximum to zero-bias value"); - parameter real vdedc = 0.9 from (0:10] `P(spice:name="vdedc" info="BE charge built-in voltage for d.c. transfer current" unit="V"); - parameter real zedc = 0.5 from (0:2) `P(spice:name="zedc" info="charge BE exponent factor for d.c. transfer current"); - parameter real ajedc = 2.5 from [1:`INF) `P(spice:name="ajedc" info="BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current"); - - // Transit time - parameter real t0 = 0.0 from [0:`INF) `P(spice:name="t0" info="low current transit time at Vbici=0" test:value="5e-12" unit="s"); - parameter real dt0h = 0.0 `P(spice:name="dt0h" info="Base width modulation contribution" test:value="2e-12" unit="s"); - parameter real tbvl = 0.0 from [0:`INF) `P(spice:name="tbvl" info="SCR width modulation contribution" test:value="4e-12" unit="s"); - parameter real tef0 = 0.0 from [0:`INF) `P(spice:name="tef0" info="Storage time in neutral emitter" test:value="1e-12" unit="s"); - parameter real gte = 1.0 from (0:20] `P(spice:name="gte" info="Exponent factor for emitter transit time"); - parameter real thcs = 0.0 from [0:`INF) `P(spice:name="thcs" info="Saturation time at high current densities" test:value="3e-11" unit="s"); - parameter real ahc = 0.1 from (0:10] `P(spice:name="ahc" info="Smoothing factor for current dependence"); - parameter real tr = 0.0 from [0:`INF) `P(spice:name="tr" info="Storage time at inverse operation" unit="s"); - - // Critical current - parameter real rci0 = 150 from (0:`INF) `P(spice:name="rci0" info="Low-field collector resistance under emitter" test:value="50" unit="Ohm" m:inverse_factor="yes"); - parameter real vlim = 0.5 from (0:10] `P(spice:name="vlim" info="Voltage dividing ohmic and satur.region" unit="V"); - parameter real vpt = 100 from (0:100] `P(spice:name="vpt" info="Punch-through voltage" test:value="10" unit="V" default="infinity"); - parameter real vces = 0.1 from [0:1] `P(spice:name="vces" info="Saturation voltage" unit="V"); - - // BC depletion cap intern - parameter real cjci0 = 1.0e-20 from (0:`INF) `P(spice:name="cjci0" info="Total zero-bias BC depletion capacitance" test:value="1e-15" unit="F" m:factor="yes"); - parameter real vdci = 0.7 from (0:10] `P(spice:name="vdci" info="BC built-in voltage" test:value="0.7" unit="V"); - parameter real zci = 0.333 from (0:1] `P(spice:name="zci" info="BC exponent factor" test:value="0.4"); - parameter real vptci = 100 from (0:100] `P(spice:name="vptci" info="Punch-through voltage of BC junction" test:value="50" unit="V"); - - // BC depletion cap extern - parameter real cjcx0 = 1.0e-20 from [0:`INF) `P(spice:name="cjcx0" info="Zero-bias external BC depletion capacitance" unit="F" test:value="1e-15" m:factor="yes"); - parameter real vdcx = 0.7 from (0:10] `P(spice:name="vdcx" info="External BC built-in voltage" unit="V"); - parameter real zcx = 0.333 from (0:1] `P(spice:name="zcx" info="External BC exponent factor"); - parameter real vptcx = 100 from (0:100] `P(spice:name="vptcx" info="Punch-through voltage" unit="V" test:value="5.0" default="infinity"); - parameter real fbc = 1.0 from [0:1] `P(spice:name="fbc" info="Split factor = Cjci0/Cjc0" test:value="0.5"); - - // Base resistance - parameter real rbi0 = 0.0 from [0:`INF) `P(spice:name="rbi0" info="Internal base resistance at zero-bias" test:value="100" unit="Ohm" m:inverse_factor="yes"); - parameter real vr0e = 2.5 from (0:`INF] `P(spice:name="vr0e" info="forward Early voltage (normalization volt.)" unit="V"); - parameter real vr0c = `INF from (0:`INF] `P(spice:name="vr0c" info="forward Early voltage (normalization volt.)" unit="V" default="infinity" test:value="25.0"); - parameter real fgeo = 0.656 from [0:`INF] `P(spice:name="fgeo" info="Geometry factor" test:value="0.73"); - - // Series resistances - parameter real rbx = 0.0 from [0:`INF) `P(spice:name="rbx" info="External base series resistance" test:value="8.8" unit="Ohm" m:inverse_factor="yes"); - parameter real rcx = 0.0 from [0:`INF) `P(spice:name="rcx" info="Emitter series resistance" test:value="12.5" unit="Ohm" m:inverse_factor="yes"); - parameter real re = 0.0 from [0:`INF) `P(spice:name="re" info="External collector series resistance" test:value="9.16" unit="Ohm" m:inverse_factor="yes"); - - // Substrate transfer current, diode current and cap - parameter real itss = 0.0 from [0:1.0] `P(spice:name="itss" info="Substrate transistor transfer saturation current" unit="A" test:value="1e-17" m:factor="yes"); - parameter real msf = 1.0 from (0:10] `P(spice:name="msf" info="Substrate transistor transfer current non-ideality factor"); - parameter real iscs = 0.0 from [0:1.0] `P(spice:name="iscs" info="SC saturation current" unit="A" test:value="1e-17" m:factor="yes"); - parameter real msc = 1.0 from (0:10] `P(spice:name="msc" info="SC non-ideality factor"); - parameter real cjs0 = 1.0e-20 from [0:`INF) `P(spice:name="cjs0" info="Zero-bias SC depletion capacitance" unit="F" test:value="1e-15" m:factor="yes"); - parameter real vds = 0.3 from (0:10] `P(spice:name="vds" info="SC built-in voltage" unit="V"); - parameter real zs = 0.3 from (0:1] `P(spice:name="zs" info="External SC exponent factor"); - parameter real vpts = 100 from (0:100] `P(spice:name="vpts" info="SC punch-through voltage" unit="V" test:value="5.0" default="infinity"); - - // Parasitic caps - parameter real cbcpar = 0.0 from [0:`INF) `P(spice:name="cbcpar" info="Collector-base isolation (overlap) capacitance" unit="F" m:factor="yes" test:value="1e-15"); - parameter real cbepar = 0.0 from [0:`INF) `P(spice:name="cbepar" info="Emitter-base oxide capacitance" unit="F" m:factor="yes" test:value="2e-15"); - - // BC avalanche current - parameter real eavl = 0.0 from [0:inf) `P(spice:name="eavl" info="Exponent factor" test:value="1e-14"); - parameter real kavl = 0.0 from [0:`INF) `P(spice:name="kavl" info="Prefactor" test:value="1.19"); - - // Flicker noise - parameter real kf = 0.0 from [0:`INF) `P(spice:name="kf" info="flicker noise coefficient" unit="M^(1-AF)"); - parameter real af = 2.0 from (0:10] `P(spice:name="af" info="flicker noise exponent factor"); - - // Temperature dependance - parameter real vgb = 1.2 from (0:10] `P(spice:name="vgb" info="Bandgap-voltage" unit="V" test:value="1.17"); - parameter real vge = 1.17 from (0:10] `P(spice:name="vge" info="Effective emitter bandgap-voltage" unit="V" test:value="1.07"); - parameter real vgc = 1.17 from (0:10] `P(spice:name="vgc" info="Effective collector bandgap-voltage" unit="V" test:value="1.14"); - parameter real vgs = 1.17 from (0:10] `P(spice:name="vgs" info="Effective substrate bandgap-voltage" unit="V" test:value="1.17"); - parameter real f1vg =-1.02377e-4 `P(spice:name="f1vg" info="Coefficient K1 in T-dependent bandgap equation" unit="V/K"); - parameter real f2vg = 4.3215e-4 `P(spice:name="f2vg" info="Coefficient K2 in T-dependent bandgap equation" unit="V/K"); - parameter real alt0 = 0.0 `P(spice:name="alt0" info="Frist-order TC of tf0" unit="1/K"); - parameter real kt0 = 0.0 `P(spice:name="kt0" info="Second-order TC of tf0" unit="1/K^2"); - parameter real zetact = 3.0 `P(spice:name="zetact" info="Exponent coefficient in transfer current temperature dependence" test:value="3.5"); - parameter real zetabet = 3.5 `P(spice:name="zetabet" info="Exponent coefficient in BE junction current temperature dependence" test:value="4.0"); - parameter real zetaci = 0.0 `P(spice:name="zetaci" info="TC of epi-collector diffusivity" test:value="1.6"); - parameter real alvs = 0.0 `P(spice:name="alvs" info="Relative TC of satur.drift velocity" unit="1/K" test:value="1e-3"); - parameter real alces = 0.0 `P(spice:name="alces" info="Relative TC of vces" unit="1/K" test:value="4e-4"); - parameter real zetarbi = 0.0 `P(spice:name="zetarbi" info="TC of internal base resistance" test:value="0.6"); - parameter real zetarbx = 0.0 `P(spice:name="zetarbx" info="TC of external base resistance" test:value="0.2"); - parameter real zetarcx = 0.0 `P(spice:name="zetarcx" info="TC of external collector resistance" test:value="0.2"); - parameter real zetare = 0.0 `P(spice:name="zetare" info="TC of emitter resistances"); - parameter real zetaiqf = 0.0 `P(spice:name="zetaiqf" info="TC of iqf"); - parameter real alkav = 0.0 `P(spice:name="alkav" info="TC of avalanche prefactor" unit="1/K"); - parameter real aleav = 0.0 `P(spice:name="aleav" info="TC of avalanche exponential factor" unit="1/K"); - - parameter real zetarth = 0.0 `P(spice:name="zetarth" info="Exponent factor for temperature dependent thermal resistance" test:value="0.0"); - - parameter integer tef_temp = 1 `P(spice:name="tef_temp" info="Flag for turning temperature dependence of tef0 on and off"); - parameter real zetaver = -1.0 `P(spice:name="zetaver" info="TC of Reverse Early voltage"); - parameter real zetavgbe = 1.0 `P(spice:name="zetavgbe" info="TC of AVER"); - parameter real dvgbe = 0.0 `P(spice:name="dvgbe" info="Bandgap difference between base and BE-junction"); - parameter real aliqfh = 0 `P(spice:name="aliqfh" info="Frist-order TC of iqfh" unit="1/K"); - parameter real kiqfh = 0 `P(spice:name="kiqfh" info="Second-order TC of iqfh" unit="1/K^2"); - - // Self-heating - parameter integer flsh = 0 from [0:2] `P(spice:name="flsh" info="Flag for self-heating calculation" test:value="2"); - parameter real rth = 0.0 from [0:`INF) `P(spice:name="rth" info="Thermal resistance" test:value="200.0" unit="K/W" m:inverse_factor="yes"); - parameter real cth = 0.0 from [0:`INF) `P(spice:name="cth" info="Thermal capacitance" test:value="0.1" unit="Ws/K" m:factor="yes"); - - // Transistor type - parameter integer pnp = 0 from [0:1] `P(info="model type flag for pnp" ); - parameter integer npn = 1 from [0:1] `P(spice:isflag="yes" info="model type flag for npn" ); - - //Circuit simulator specific parameters - parameter real tnom = 27 `P(spice:name="tnom" info="Temperature for which parameters are valid" unit="C"); - parameter real dt = 0.0 `P(spice:name="dt" type="instance" info="Temperature change for particular transistor" unit="K"); - - -// Declaration of the variables: begin - - real HICUMtype `P(spice:name="type" info="Device type from npn or pnp flags" unit="no" ask="yes"); - - // QCJMOD - real cj0,vd,z,aj; - real zr,vp; - real cmax,cr,ve; - real ee1,ez,ezr,vdj1,vdj2,ex1,vr,vj1,vj2,vj4; - real qj1,qj2,qj3,qjf; - - //Cjfun *** VT, removed: BA - real cj1,cj2,cj3,cjf; - - //cjtfun *** tnom,VT,mg,vt0, removed: BA - real vg; - real vdj0,vdjt,cj0_t,vd_t,aj_t; - - // temperature and drift - real VT,Tamb,Tdev,Tnom,dT,qtt0,ln_qtt0; - real vde_t,vdci_t,vdcx_t,vds_t,vdedc_t; - real is_t,ires_t,ibes_t,ibcs_t,iqf_t; - real itss_t,iscs_t,cje0_t,cjci0_t,cjcx0_t, cje0_dc_t, cje0_dc; - real cjs0_t,rci0_t,vlim_t; - real vces_t,thcs_t,tef0_t,rbi0_t; - real rbx_t,rcx_t,re_t,t0_t,eavl_t,kavl_t; - real aje_t,ajedc_t; - - // bc charge and cap - real qjci `P(ask="yes" info="B-C internal junction charge" unit="C"); - real qjcx,qjcii,cjcii,qjcxi,qjciii; //cjcx - real cjci0_t_ii,cjcx0_t_ii,cjcx0_t_i,v_j; - - // be junction - real qjei `P(ask="yes" info="B-E internal junction charge" unit="C"); - real cjei `P(ask="yes" info="B-E internal junction capacitance" unit="F"); - real vf,vj,x,y,e1,e2; - - // transfer and internal base current - real cc,qj_2,qj,facl; - real tf0,ickf,ickr,itfi,itri,qm, qml, qmh; - real qpt,itf,itr, qpt_l, qpt_h, denom_iqf; - real a_bpt, b_q; - - real it `P(ask="yes" info="Transfer Current" unit="A"); - real ibe,ire,ibi; - real itfl,itrl,al,s3l,wl,d_qfh; - - - - // be diffusion charge - real qf,qf0,dqfh,dqef; - real dtef,dtfh,tf,ick; - real vc,vceff,s3,w,wdc,a,tww, aa, a1, a2; - - // bc diffusion charge - real qr; - - // avalanche current source - real v_bord,a_iavl,lncc; - - // base resistance - real rb,eta,rbi,qje,Qz_nom,fQz; - - // substrate transistor, diode and cap - real qjs,HSa,HSb,HSI_Tsu,HSUM; - - // self heating - real pterm; - real rth_t, x_t; - - // new for temperature dependence - real mg,zetabci,zetasct,zetatef,avs; - real k1,k2,vgbe,vgbc,vgsc,dvg; - real xvf,xvf2,dvj,uvc,vt0; - - // noise - real flicker_Pwr,fourkt,twoq; - - // LIN_EXP - real le,arg,le1,arg1,le2,arg2; - - //HICDIO - real IS,IST,UM1,U,Iz,DIOY; - - // branch voltages - real Vbci,Vbici,Vbiei,Vciei,Vsci,Veie,Vbbi,Vcic,Vbe,Vrth; - - //Output to be seen - real ijbc `P(ask="yes" info="Base-collector diode current" unit="A"); - real iavl `P(ask="yes" info="Avalanche current" unit="A"); - real ijsc `P(ask="yes" info="Substrate-collector diode current" unit="A"); - real Ieei `P(ask="yes" info="Current through external to internal emitter node" unit="A"); - real Icci `P(ask="yes" info="Current through external to internal collector node" unit="A"); - real Ibbi `P(ask="yes" info="Current through external to internal base node" unit="A"); - real Ibici `P(ask="yes" info="Base-collector diode current minus the avalanche current" unit="A"); - real ijbe `P(ask="yes" info="Base-emitter diode current" unit="A"); - - real Qbci,Qbe,Qbici,Qbiei; - real aver_t,vjh,vj_z,h_vbe,ver_t,iqfh_t,tfh_t,ahq_t; - real q_p2,p2_a,p2_b,p2_c,p2_p,p2_q,p2_D,p2_u,p2_v,q_p3; - real tmp,tmp2,tmp3,o3,diff_q; -//Declaration of the variables: end - - -// -//======================== calculation of the transistor =================== -// - -analog begin - -// assign voltages with regard to transistor type - - `INITIAL_MODEL - begin - if (`PGIVEN(npn)) - HICUMtype = `NPN; - else if (`PGIVEN(pnp)) - HICUMtype = `PNP; - else - HICUMtype = `NPN; - end - - Vbci = HICUMtype*V(br_bci); - Vbici = HICUMtype*V(br_bici); - Vbiei = HICUMtype*V(br_biei); - Vciei = HICUMtype*V(br_ciei); - Vsci = HICUMtype*V(br_sci); - Veie = V(br_eie_v); - Vcic = V(br_cic_v); - Vbbi = V(br_bbi_v); - Vbe = HICUMtype*V(br_be); - Vrth = V(br_sht); - - - -// -// temperature and resulting parameter drift -// - - Tnom = tnom+273.15; - Tamb = $temperature; - Tdev = Tamb+dt+Vrth; - -// Limit temperature to avoid FPE's in equations - if(Tdev < `TMIN + 273.15) begin - Tdev = `TMIN + 273.15; - end else begin - if (Tdev > `TMAX + 273.15) begin - Tdev = `TMAX + 273.15; - end - end - - vt0 = `P_K*Tnom /`P_Q; - VT = `P_K*Tdev /`P_Q; - dT = Tdev-Tnom; - qtt0 = Tdev/Tnom; - ln_qtt0 = ln(qtt0); - k1 = f1vg*Tnom; - k2 = f2vg*Tnom+k1*ln(Tnom); - avs = alvs*Tnom; - vgbe = (vgb+vge)/2; - vgbc = (vgb+vgc)/2; - vgsc = (vgs+vgc)/2; - mg = 3-`P_Q*f1vg/`P_K; - zetabci = mg+1-zetaci; - zetasct = mg-1.5; //+1-m_upS with m_upS=2.5 - is_t = is*exp(zetact*ln_qtt0+vgb/VT*(qtt0-1)); - ibes_t = ibes*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); - ires_t = ires*exp(0.5*mg*ln_qtt0+0.5*vgbe/VT*(qtt0-1)); - ibcs_t = ibcs*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); - itss_t = itss*exp(zetasct*ln_qtt0+vgc/VT*(qtt0-1)); - iscs_t = iscs*exp(zetasct*ln_qtt0+vgs/VT*(qtt0-1)); - - `TMPHICJ(cje0,vde,ze,vgbe,cje0_t,vde_t) - - // `TMPHICJ(cje0,vde,zedc,vgbe,cje0_t,vdedc_t) - - cje0_dc = cje0; - - `TMPHICJ(cje0_dc,vdedc,zedc,vgbe,cje0_dc_t,vdedc_t) //introducing DC capacitance - - - aje_t = aje*vde_t/vde; - - ajedc_t = ajedc*vdedc_t/vdedc; - - `TMPHICJ(cjci0,vdci,zci,vgbc,cjci0_t,vdci_t) - `TMPHICJ(cjcx0,vdcx,zcx,vgbc,cjcx0_t,vdcx_t) - `TMPHICJ(cjs0,vds,zs,vgsc,cjs0_t,vds_t) - iqf_t = iqf*exp(zetaiqf*ln_qtt0-dvgbe/VT*(qtt0-1)); - rci0_t = rci0*exp(zetaci*ln_qtt0); - vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); - vces_t = vces*(1+alces*dT); - t0_t = t0*(1+alt0*dT+kt0*dT*dT); - thcs_t = thcs*exp((zetaci-1)*ln_qtt0); - zetatef = zetabet-zetact-0.5; - dvg = vgb-vge; - if (tef_temp == 1) begin - tef0_t = tef0*exp(zetatef*ln_qtt0-dvg/VT*(qtt0-1)); - end else begin - tef0_t = tef0; - end - rbx_t = rbx*exp(zetarbx*ln_qtt0); - rcx_t = rcx*exp(zetarcx*ln_qtt0); - rbi0_t = rbi0*exp(zetarbi*ln_qtt0); - re_t = re*exp(zetare*ln_qtt0); - eavl_t = eavl*exp(aleav*dT); - kavl_t = kavl*exp(alkav*dT); - - - //Temperature dependence of Thermal resistance - if (zetarth!=0) begin - rth_t = rth*exp(zetarth*ln(Tdev/Tnom)); - end else begin - rth_t=rth; - end - - aver_t = aver*exp(zetaver*ln_qtt0); - ver_t = ver/exp(dvgbe/VT*(exp(zetavgbe*ln_qtt0)-1)); - iqfh_t = iqfh*(1+aliqfh*dT+kiqfh*dT*dT); - tfh_t = tfh*(1+aliqfh*dT+kiqfh*dT*dT)*exp((vgb-vge)/VT*(qtt0-1)); - ahq_t = ahq; - -// -// Calculation of intrinsic transistor elements -// - -// BC charge and cap (internal and external) - -// The cjcx0 value is used to switch between one (cjcx0=0) and two bc parameter sets -// 1. For one parameter set only the internal bc set is partitioned by fbc -// 2. For two independent sets only the external set is partitioned by fbc - - if (cjcx0_t==0) begin - cjci0_t_ii = cjci0_t*fbc; // zero bias internal portion - qjcxi = 0; - cjcx0_t_i = cjci0_t*(1-fbc); // zero bias external portion - `HICJQ(Vbci,cjcx0_t_i,vdci_t,zci,vptci,qjcx) - end else begin - cjci0_t_ii = cjci0_t; // zero bias internal portion - cjcx0_t_ii = cjcx0_t*fbc; - `HICJQ(Vbici,cjcx0_t_ii,vdcx_t,zcx,vptcx,qjcxi) - cjcx0_t_i = cjcx0_t*(1-fbc); // zero bias external portion - `HICJQ(Vbci,cjcx0_t_i,vdcx_t,zcx,vptcx,qjcx) - end - `HICJQ(Vbici,cjci0_t_ii,vdci_t,zci,vptci,qjci) - qjcii = qjci+qjcxi; - -//Internal bc cap without punch through for cc - - //`HICJQ(Vbici,cjci0_t_ii,vdci_t,zci,100,qjciii) - `QCMODF(Vbici,cjci0_t_ii,vdci_t,zci,2.4,cjcii) - //cjcii = ddx(qjciii,V(bi)); - -//Internal be cap and charge - -// `QJMODF(Vbiei,cje0_dc_t,vde_t,ze,aje_t,qjei) -// cjei = ddx(qjei,V(bi)); - -// Critical current: ick - vc = Vciei-vces_t; - uvc = vc/VT-1; - vceff = VT*(1+0.5*(uvc+sqrt(uvc*uvc+1.921812))); - x = (vceff-vlim_t)/vpt; - ick = vceff*(1+0.5*(x+sqrt(x*x+1e-3)))/rci0_t/sqrt(1+vceff*vceff/vlim_t/vlim_t); - - -// Normalized BC cap and charge - - if(cjcii > 0.0 && cjci0_t_ii > 0.0) begin - - cc = cjci0_t_ii/cjcii; - qjci = qjci/cjci0_t_ii; - - end else begin - - cc = 1.0; - qjci = 0; - - end - - //cc = cjci0_t_ii/cjcii; - //qjci = qjci/cjci0_t_ii; - - `QJMODF(Vbiei,cje0_dc_t,vdedc_t,zedc,ajedc_t,qjei) - - if (aver == 0.0) begin - h_vbe = 1; - end else begin - vjh = (vdedc_t-Vbiei)/(2.0*VT); - vjh = vdedc_t-2.0*VT*(vjh+sqrt(vjh*vjh+1.921812))*0.5; - vjh = (vjh-VT)/VT; - vjh = VT*(1.0+(vjh+sqrt(vjh*vjh+1.921812))*0.5); - vj_z = (1.0-exp(zedc*ln(1.0-vjh/vdedc_t)))*aver_t; - h_vbe = (exp(vj_z)-1.0)/vj_z; - end - - qje = h_vbe*qjei/cje0_t; - qj = (1+qjci/vef+qje/ver_t); - - a_bpt = 0.05; - b_q = 20*qj-1; - qj_2=0.025*(1+(b_q +sqrt(b_q*b_q+1.921812))/2); - -// Minority charge transit time - tf0 = t0_t+dt0h*(cc-1)+tbvl*(1/cc-1); - - //Determination of base realted critical current - - if (fiqf==1)begin - denom_iqf = fiqf*((tf0/t0)-1); - ickf = iqf_t/(1+denom_iqf); - end else begin - ickf = iqf_t; - end - - ickr = iqr; - -// Ideal transfer currents - arg1 = Vbiei/(mcf*VT); - `LIN_EXP(le1,arg1) - itfi=is_t*le1; - - arg2 = Vbici/(mcr*VT); - `LIN_EXP(le2,arg2) - itri=is_t*le2; -// Normalized minority charge at low currents (w=0) and high currents (w=1) - - if (tfh!=0)begin - qml = itfi/ickf+itri/ickr+exp((0.6666)*ln(itfi*(itfi/ick)*((tfh_t)/iqfh_t))); - qmh = itfi/ickf+itri/ickr+itfi/iqfh_t+exp((0.6666)*ln(itfi*(itfi/ick)*((tfh_t)/iqfh_t))); - end else begin - qml = itfi/ickf+itri/ickr; - qmh = itfi/ickf+itri/ickr+itfi/iqfh_t; - end - qpt_l= qj_2+sqrt((qj_2)*(qj_2)+qml); - qpt_h= qj_2+sqrt((qj_2)*(qj_2)+qmh); - -// Calculation of the injection width - diff_q = qmh-qml; - if (abs(diff_q)>1e-8) begin - a1= 1-ick/(1+ahq_t)/itfi*qpt_l; - a2= 1+ick/(1+ahq_t)/itfi*(qpt_h-qpt_l); - aa= a1/a2; - - wdc= (sqrt(aa*aa+0.01)+aa)/(1+sqrt(1+0.01)); - end else begin - wdc = 0; - end - -// Normalized minority charge - - if (it_mod == 0) begin - if (tfh!=0) begin - qm = itfi/ickf+itri/ickr+itfi/iqfh_t*wdc*wdc+exp((0.6666)*ln(itfi*(itfi/ick)*((tfh_t)/iqfh_t))); - end else begin - qm = itfi/ickf+itri/ickr+itfi/iqfh_t*wdc*wdc; - end - // Normalized total hole charge - qpt = qj_2+sqrt((qj_2)*(qj_2)+qm); - end else begin - `qpt_mod(qpt,itfi/ickf+itri/ickr+itfi/iqfh_t*wdc*wdc) - end - if (qpt<=1e-20) begin - qpt=1e-20; - end - - itf = itfi/qpt; - itr = itri/qpt; - - // Transfer current - - if (itf<=1e-20) begin - itf = 1e-20; - end - it = itf-itr; - -// BE diffusion charge - -// Calculation of low-current portion - qf0 = tf0*itf; - -// Current dependent component - a = 1-ick/itf; - s3 = sqrt(a*a+ahc); - w = (a+s3)/(1+sqrt(1+ahc)); - tww = thcs_t*w*w; - dqfh = tww*itf; - dtfh = tww*(1+2*ick/itf/s3); - -// Emitter component - dtef = tef0_t*exp(gte*ln(itf/ick)); - dqef = dtef*itf/(gte+1.0); - -// Total minority charge and transit time - qf = qf0+dqef+dqfh; - tf = tf0+dtfh+dtef; - -// BC diffusion charge - qr = tr*itr; - -// Internal base current - -// BE diode - `HICDIO(ibes,ibes_t,mbe,Vbiei,ibe) - `HICDIO(ires,ires_t,mre,Vbiei,ire) - ijbe = ibe+ire; - -// BC diode - `HICDIO(ibcs,ibcs_t,mbc,Vbici,ijbc) - -// Total base current - ibi = ijbe+ijbc; - -// Avalanche current - - if (Vbici < 0) begin : HICAVL - v_bord = eavl_t*vdci_t; - if (vdci_t-Vbici>v_bord) begin - a_iavl = kavl_t/vdci_t*exp(-cc); - iavl = itf*a_iavl*(v_bord+(1+cc)*(vdci_t-Vbici-v_bord)); - end else begin - lncc = ln(1/cc); - iavl = kavl_t*itf*exp(-1/zci*lncc-eavl_t*exp((1/zci-1)*lncc)); - end - end else begin - iavl = 0; - end - -// -// Additional elements for external transistor -// - `QJMODF(Vbiei,cje0_t,vde_t,ze,aje_t,qjei) // Computation of AC charge for base resistance calculation - qje = qjei/cje0_t; - -// Base resistance - if(rbi0_t > 0.0) begin : HICRBI - // Conductivity modulation with hyperbolic smoothing - - Qz_nom = 1+qje/vr0e+qjci/vr0c+itf/ickf+itr/ickr; - fQz = 0.5*(Qz_nom+sqrt(Qz_nom*Qz_nom+0.01)); - rbi = rbi0_t/fQz; - - //rbi= rbi0_t*(1+0.2)/(0.2+qpt); - // Emitter current crowding - if (ibi > 0.0) begin - eta = fgeo*rbi*ibi/VT; - if (eta < 1e-6) begin - rbi = rbi*(1-0.5*eta); - end else begin - rbi = rbi*ln(eta+1)/eta; - end - end - end else begin - rbi = 0.0; - end - // Total base resistance - //rbi= rbi0_t; - rb = rbi+rbx_t; - -// Parasitic substrate transistor transfer current - if(itss > 0.0) begin : Sub_Transfer - HSUM = msf*VT; - HSa = limexp(Vbci/HSUM); - HSb = limexp(Vsci/HSUM); - HSI_Tsu = itss_t*(HSa-HSb); - end else begin - HSI_Tsu = 0.0; - end - -// Substrate diode and cap and charge - - `HICDIO(iscs,iscs_t,msc,Vsci,ijsc) - - `HICJQ(Vsci,cjs0_t,vds_t,zs,vpts,qjs) - -// Self heating - - if (flsh == 1 && rth_t >= `MIN_R) begin - pterm = it*Vciei+iavl*(vdci_t-Vbici); - end else if (flsh == 2 && rth_t >= `MIN_R) begin - pterm = Vciei*it + (vdci_t-Vbici)*iavl + ijbe*Vbiei + ijbc*Vbici + ijsc*Vsci; - if (rb >= `MIN_R) begin - pterm = pterm + Vbbi*Vbbi/rb; - end - if (re_t >= `MIN_R) begin - pterm = pterm + Veie*Veie/re_t; - end - if (rcx_t >= `MIN_R) begin - pterm = pterm + Vcic*Vcic/rcx_t; - end - end - -// -// Compute branch sources -// - - Ibici = ijbc - iavl; - - Qbci = cbcpar*Vbci; - Qbe = cbepar*Vbe; - Qbici = qjcii+qr; - Qbiei = qjei+qf; - - ijsc = HICUMtype*ijsc; - qjs = HICUMtype*qjs; - qjcx = HICUMtype*qjcx; - Qbci = HICUMtype*Qbci; - Qbe = HICUMtype*Qbe; - - Ibici = HICUMtype*Ibici; - Qbici = HICUMtype*Qbici; - ijbe = HICUMtype*ijbe; - Qbiei = HICUMtype*Qbiei; - it = HICUMtype*it; - -// -// Define branch sources -// - I(br_biei) <+ `Gmin*V(br_biei); - I(br_bici) <+ `Gmin*V(br_bici); - I(br_ciei) <+ `Gmin*V(br_ciei); - - I(br_bs) <+ HSI_Tsu; - I(br_sci) <+ ijsc `P(spectre:gmin="add" spectre:pwl_passive="1e10"); - I(br_sci) <+ ddt(qjs); - I(br_bci) <+ ddt(qjcx); - I(br_bci) <+ ddt(Qbci); - I(br_be) <+ ddt(Qbe); - if (re >= `MIN_R) begin - I(br_eie_i) <+ Veie/re_t `P(spectre:gmin="add"); - end else begin -// V(br_eie_v) <+ 0.0; - I(br_eie_i) <+ V(br_eie_v)/1e-6; - end - if (rcx >= `MIN_R) begin - I(br_cic_i) <+ Vcic/rcx_t `P(spectre:gmin="add"); - end else begin -// V(br_cic_v) <+ 0.0; - I(br_cic_i) <+ V(br_cic_v)/1e-6; - end - if (rbi0 >= `MIN_R || rbx >= `MIN_R) begin - I(br_bbi_i) <+ Vbbi/rb `P(spectre:gmin="add"); - end else begin -// V(br_bbi_v) <+ 0.0; - I(br_bbi_i) <+ V(br_bbi_v)/1e-6; - end - I(br_bici) <+ Ibici `P(spectre:gmin="add" spectre:pwl_sat_current="IMAX" spectre:pwl_sat_cond="imax/0.025" spectre:pwl_rev_current="imax" spectre:pwl_rev_cond="IMAX/0.025"); - I(br_bici) <+ ddt(Qbici); - I(br_biei) <+ ijbe `P(spectre:gmin="add" spectre:pwl_fwd_current="IBEIS*exp(25.0)" spectre:pwl_fwd_node="bi" spectre:pwl_fwd_cond="IBEIS*exp(25.0)/0.025" spectre:pwl_sat_current="IMAX" spectre:pwl_sat_cond="IMAX/0.025" spectre:pwl_passive="1e10"); - I(br_biei) <+ ddt(Qbiei); - I(br_ciei) <+ it `P(spectre:pwl_fwd_current="IS*exp(25.0)" spectre:pwl_fwd_node="bi" spectre:pwl_fwd_cond="IS*exp(25.0)/0.025" spectre:pwl_rev_current="IMAX" spectre:pwl_rev_cond="IMAX/0.025" spectre:pwl_passive="1e10"); - - // Following code is an intermediate solution: - // ****************************************** - if(flsh == 0 || rth < `MIN_R) begin - I(br_sht) <+ Vrth/`MIN_R; - end else begin - I(br_sht) <+ Vrth/rth_t-pterm `P(spectre:gmin="add"); - I(br_sht) <+ ddt(cth*Vrth); - end - // ****************************************** - // For simulators having no problem with V(br_sht) <+ 0.0 - // with external thermal node, follwing code may be used. - // This external thermal node should remain accessible. - // ******************************************** - - //if(flsh == 0 || rth < `MIN_R) begin - - // V(br_sht) <+ 0.0; - - //end else begin - // I(br_sht) <+ Vrth/rth_t-pterm `P(spectre:gmin="add"); - // I(br_sht) <+ ddt(cth*Vrth); - - //end - // ******************************************** - -// Noise sources -// Thermal noise - fourkt = 4.0 * `P_K * Tdev; - if(rbx >= `MIN_R || rbi0 >= `MIN_R) begin - I(br_bbi_i) <+ white_noise(fourkt/rb); - end - if(rcx >= `MIN_R) begin - I(br_cic_i) <+ white_noise(fourkt/rcx_t); - end - if(re >= `MIN_R) begin - I(br_eie_i) <+ white_noise(fourkt/re_t); - end - -// Shot noise - twoq = 2.0 * `P_Q; - I(br_biei) <+ white_noise(twoq*ijbe); - I(br_ciei) <+ white_noise(twoq*it); - -// Flicker noise - flicker_Pwr = kf*pow(ijbe,af); - I(br_biei) <+ flicker_noise(flicker_Pwr,1.0); - - - - -end // analog -endmodule diff --git a/qucs-core/src/components/verilog/hicumL2V2p11.va b/qucs-core/src/components/verilog/hicumL2V2p11.va deleted file mode 100644 index 96c50f07c6..0000000000 --- a/qucs-core/src/components/verilog/hicumL2V2p11.va +++ /dev/null @@ -1,1198 +0,0 @@ -//HICUM Level_2 Version_2.1: A Verilog-A Description -//Default simulator: Spectre - -//ADS -`include "constants.vams" -`include "disciplines.vams" -//`include "compact.vams" - -//Spectre -//`include "constants.h" -//`include "discipline.h" - - -`define LN_EXP_LIMIT 11.0 -`define ICKexp_lim 30.0 -`define VPT_thresh 1.0e2 -`define Dexp_lim 80.0 -`define DFa_fj 1.921812 -`define RTOLC 1.0e-5 -`define l_itmax 100 -`define TMAX 326.85 -`define TMIN -100.0 - -// DEPLETION CAPACITANCE AND CHARGE CALCULATION -// Hyperbolic smoothing used; no punch-through -// INPUT: -// c_0 : zero-bias capacitance -// u_d : built-in voltage -// z : exponent coefficient -// a_j : control parameter for C peak value at high forward bias -// U_cap : voltage across junction -// IMPLICIT INPUT: -// VT : thermal voltage -// OUTPUT: -// Qz : depletion Charge -// C : depletion capacitance (Until ddx() is operative) -`define QCJMODF(c_0,u_d,z,a_j,U_cap,C,Qz)\ - if(c_0 > 0.0) begin\ - DFV_f = u_d*(1.0-exp(-ln(a_j)/z));\ - DFC_max = a_j*c_0;\ - DFv_e = (DFV_f-U_cap)/VT;\ - if(DFv_e < `Dexp_lim) begin\ - DFe = exp(DFv_e);\ - DFv_j = DFV_f-VT*ln(1.0+DFe);\ - DFdvj_dv= DFe/(1.0+DFe);\ - end else begin\ - DFv_j = U_cap;\ - DFdvj_dv= 1;\ - end\ - DFb = ln(1.0-DFv_j/u_d);\ - DFC_j1 = c_0*exp(-z*DFb)*DFdvj_dv;\ - C = DFC_j1+DFC_max*(1.0-DFdvj_dv);\ - DFQ_j = c_0*u_d*(1.0-exp(DFb*(1.0-z)))/(1.0-z);\ - Qz = DFQ_j+DFC_max*(U_cap-DFv_j);\ - end else begin\ - C = 0.0;\ - Qz = 0.0;\ - end - - -// DEPLETION CAPACITANCE AND CHARGE CALCULATION -// smoothing of reverse bias region (punch-through) -// and limiting to aj=Cj,max/Cj0 for forward bias. -// Important for base-collector and collector-substrate junction -// INPUT: -// c_0 : zero-bias capacitance -// u_d : built-in voltage -// z : exponent coefficient -// aj : control parameter for C peak value at high forward bias -// v_pt : punch-through voltage (defined as qNw^2/2e) -// U_cap : voltage across junction -// IMPLICIT INPUT: -// VT : thermal voltage -// OUTPUT: -// Qz : depletion charge -// C : depletion capacitance (Until ddx() is operative) -`define QCJMOD(c_0,u_d,z,aj,v_pt,U_cap,C,Qz)\ - if(c_0 > 0.0) begin\ - Dz_r = z/4.0;\ - Dv_p = v_pt-u_d;\ - DV_f = u_d*(1.0-exp(-ln(aj)/z));\ - DC_max = aj*c_0;\ - DC_c = c_0*exp(ln(v_pt/u_d)*(Dz_r-z));\ - Da = VT;\ - Dv_e = (DV_f-U_cap)/Da;\ - if(Dv_e < `Dexp_lim) begin\ - De = exp(Dv_e);\ - De_1 = De/(1.0+De);\ - Dv_j1 = DV_f-Da*ln(1.0+De);\ - end else begin\ - De_1 = 1.0;\ - Dv_j1 = U_cap;\ - end\ - Da = 0.1*Dv_p+4.0*VT;\ - Dv_r = (Dv_p+Dv_j1)/Da;\ - if(Dv_r < `Dexp_lim) begin\ - De = exp(Dv_r);\ - De_2 = De/(1.0+De);\ - Dv_j2 = -Dv_p+Da*ln(1.0+De);\ - end else begin\ - De_2 = 1.0;\ - Dv_j2 = Dv_j1;\ - end\ - Dv_j4 = U_cap-Dv_j1;\ - DCln1 = ln(1.0-Dv_j1/u_d);\ - DCln2 = ln(1.0-Dv_j2/u_d);\ - Dz1 = 1.0-z;\ - Dzr1 = 1.0-Dz_r;\ - DC_j1 = c_0*exp(DCln2*(-z))*De_1*De_2;\ - DC_j2 = DC_c*exp(DCln1*(-Dz_r))*(1.0-De_2);\ - DC_j3 = DC_max*(1.0-De_1);\ - C = DC_j1+DC_j2+DC_j3;\ - DQ_j1 = c_0*(1.0-exp(DCln2*Dz1))/Dz1;\ - DQ_j2 = DC_c*(1.0-exp(DCln1*Dzr1))/Dzr1;\ - DQ_j3 = DC_c*(1.0-exp(DCln2*Dzr1))/Dzr1;\ - Qz = (DQ_j1+DQ_j2-DQ_j3)*u_d+DC_max*Dv_j4;\ - end else begin\ - C = 0.0;\ - Qz = 0.0;\ - end - - -// DEPLETION CAPACITANCE AND CHARGE CALCULATION SELECTOR: -// Dependent on junction punch-through voltage -// Important for collector related junctions -`define HICJCAP(c_0,u_d,z,v_pt,U_cap,C,Qz)\ - if(v_pt < `VPT_thresh) begin\ - `QCJMOD(c_0,u_d,z,2.4,v_pt,U_cap,C,Qz)\ - end else begin\ - `QCJMODF(c_0,u_d,z,2.4,U_cap,C,Qz)\ - end - - -// A CALCULATION NEEDED FOR COLLECTOR MINORITY CHARGE FORMULATION -// INPUT: -// zb,zl : zeta_b and zeta_l (model parameters, TED 10/96) -// w : normalized injection width -// OUTPUT: -// hicfcio : function of equation (2.1.17-10) -`define HICFCI(zb,zl,lnzb,w,hicfcio,dhicfcio_dw)\ - z = zb*w;\ - if(z > 1.0e-6) begin\ - x = 1.0+z;\ - a = x*x;\ - a2 = 0.250*(a*(2.0*lnzb-1.0)+1.0);\ - a3 = (a*x*(3.0*lnzb-1.0)+1.0)/9.0;\ - r = zl/zb;\ - hicfcio = ((1.0-r)*a2+r*a3)/zb;\ - dhicfcio_dw = ((1.0-r)*x+r*a)*lnzb;\ - end else begin\ - a = z*z;\ - a2 = 3.0+z-0.5*a+z*a;\ - a3 = -2.0*z+1.5*a+2.0*a*a/3.0;\ - hicfcio = (zb*a2+zl*a3)*w*w/6.0;\ - dhicfcio_dw = z+0.5*a-a*z/3.0+5.0*a*a/6.0+zl*w*(a-z+2.0*a*a/3.0);\ - end - - -// NEEDED TO CALCULATE WEIGHTED ICCR COLLECTOR MINORITY CHARGE -// INPUT: -// z : zeta_b or zeta_l -// w : normalized injection width -// OUTPUT: -// hicfcto : output -// dhicfcto_dw : derivative of output wrt w -`define HICFCT(z,lnz,w,hicfcto,dhicfcto_dw)\ - a = z*w;\ - if (a > 1.0e-6) begin\ - hicfcto = (a - lnz)/z;\ - dhicfcto_dw = a / (1.0 + a);\ - end else begin\ - hicfcto = 0.5 * a * w;\ - dhicfcto_dw = a;\ - end\ - - - -// COLLECTOR CURRENT SPREADING CALCULATION -// collector minority charge incl. 2D/3D current spreading (TED 10/96) -// INPUT: -// Ix : forward transport current component (itf) -// I_CK : critical current -// FFT_pcS : dependent on fthc and thcs (parameters) -// IMPLICIT INPUT: -// alhc, latl, latb : model parameters -// VT : thermal voltage -// OUTPUT: -// Q_fC, Q_CT: actual and ICCR (weighted) hole charge -// T_fC, T_cT: actual and ICCR (weighted) transit time -// Derivative dfCT_ditf not properly implemented yet -`define HICQFC(Ix,I_CK,FFT_pcS,Q_fC,Q_CT,T_fC,T_cT)\ - Q_fC = FFT_pcS*Ix;\ - FCa = 1.0-I_CK/Ix;\ - FCrt = sqrt(FCa*FCa+alhc);\ - FCa_ck = 1.0-(FCa+FCrt)/(1.0+sqrt(1.0+alhc));\ - FCdaick_ditf = (FCa_ck-1.0)*(1-FCa)/(FCrt*Ix);\ - if(latb > latl) begin\ - FCz = latb-latl;\ - FCxl = 1.0+latl;\ - FCxb = 1.0+latb;\ - if(latb > 0.01) begin\ - FCln = ln(FCxb/FCxl);\ - FCa1 = exp((FCa_ck-1.0)*FCln);\ - FCd_a = 1.0/(latl-FCa1*latb);\ - FCw = (FCa1-1.0)*FCd_a;\ - FCa = ln((1.0+latb*FCw)/(1.0+latl*FCw));\ - FCdw_daick = -FCz*FCa1*FCln*FCd_a*FCd_a;\ - FClnb = ln(1.0+latb*FCw);\ - FClnl = ln(1.0+latl*FCw);\ - FCa1 = FClnb - FClnl;\ - FCda1_dw = latb/(1.0+latb*FCw) - latl/(1.0+latl*FCw);\ - end else begin\ - FCf1 = 1.0-FCa_ck;\ - FCd_a = 1.0/(1.0-FCf1*latb);\ - FCw = FCf1*FCd_a;\ - FCa = FCz*FCw;\ - FCdw_daick = -1.0*FCd_a*FCd_a;\ - FClnb = latb*FCw;\ - FClnl = latl*FCw;\ - FCa1 = FCz*FCw;\ - FCda1_dw = FCz;\ - end\ - FCf_CT = 2.0/FCz;\ - FCw2 = FCw*FCw;\ - FCf1 = latb*latl*FCw*FCw2/3.0+(latb+latl)*FCw2/2.0+FCw;\ - FCdf1_dw = latb*latl*FCw2 + (latb+latl)*FCw + 1.0;\ - `HICFCI(latb,latl,FClnb,FCw,FCf2,FCdf2_dw)\ - `HICFCI(latl,latb,FClnl,FCw,FCf3,FCdf3_dw)\ - FCf_ci = FCf_CT*(FCa*FCf1-FCf2+FCf3);\ - FCdfc_dw = FCf_CT*(FCa1*FCdf1_dw+FCda1_dw*FCf1-FCdf2_dw+FCdf3_dw);\ - FCdw_ditf = FCdw_daick*FCdaick_ditf;\ - FCdfc_ditf = FCdfc_dw*FCdw_ditf;\ - `HICFCT(latb,FClnb,FCw,FCf2,FCdf2_dw)\ - `HICFCT(latl,FClnl,FCw,FCf3,FCdf3_dw)\ - FCf_CT = FCf_CT*(FCf2-FCf3);\ - FCdfCT_dw = FCf_CT*(FCdf2_dw-FCdf3_dw);\ - FCdfCT_ditf = FCdfCT_dw*FCdw_ditf;\ - end else begin\ - if(latb > 0.01) begin\ - FCd_a = 1.0/(1.0+FCa_ck*latb);\ - FCw = (1.0-FCa_ck)*FCd_a;\ - FCdw_daick = -(1.0+latb)*FCd_a*FCd_a;\ - end else begin\ - FCw = 1.0-FCa_ck-FCa_ck*latb;\ - FCdw_daick = -(1.0+latb);\ - end\ - FCw2 = FCw*FCw;\ - FCz = latb*FCw;\ - FCz_1 = 1.0+FCz;\ - FCd_f = 1.0/(FCz_1);\ - FCf_ci = FCw2*(1.0+FCz/3.0)*FCd_f;\ - FCdfc_dw = 2.0*FCw*(FCz_1+FCz*FCz/3.0)*FCd_f*FCd_f;\ - FCdw_ditf = FCdw_daick*FCdaick_ditf;\ - FCdfc_ditf = FCdfc_dw*FCdw_ditf;\ - if (FCz > 0.001) begin\ - FCf_CT = 2.0*(FCz_1*ln(FCz_1)-FCz)/(latb*latb*FCz_1);\ - FCdfCT_dw = 2.0*FCw*FCd_f*FCd_f;\ - end else begin\ - FCf_CT = FCw2*(1.0-FCz/3.0)*FCd_f;\ - FCdfCT_dw = 2.0*FCw*(1.0-FCz*FCz/3.0)*FCd_f*FCd_f;\ - end\ - FCdfCT_ditf = FCdfCT_dw*FCdw_ditf;\ - end\ - Q_CT = Q_fC*FCf_CT;\ - Q_fC = Q_fC*FCf_ci;\ - T_fC = FFT_pcS*(FCf_ci+Ix*FCdfc_ditf);\ - T_cT = FFT_pcS*(FCf_CT+Ix*FCdfCT_ditf); - - -// TRANSIT-TIME AND STORED MINORITY CHARGE -// INPUT: -// itf : forward transport current -// I_CK : critical current -// T_f : transit time \ -// Q_f : minority charge / for low current -// IMPLICIT INPUT: -// tef0, gtfe, fthc, thcs, alhc, latl, latb : model parameters -// OUTPUT: -// T_f : transit time \ -// Q_f : minority charge / transient analysis -// T_fT : transit time \ -// Q_fT : minority charge / ICCR (transfer current) -// Q_bf : excess base charge -`define HICQFF(itf,I_CK,T_f,Q_f,T_fT,Q_fT)\ - if(itf < 1.0e-6*I_CK) begin\ - Q_fT = Q_f;\ - T_fT = T_f;\ - end else begin\ - FFa = I_CK/itf;\ - FFd_TfE = tef0_t*exp(-gtfe*ln(FFa));\ - FFd_QfE = FFd_TfE*itf/(gtfe+1.0);\ - FFT_fbS = (1.0-fthc)*thcs_t;\ - FFx = 1.0-FFa;\ - FFs = sqrt(FFx*FFx+alhc);\ - FFw = (FFx+FFs)/(1.0+sqrt(1.0+alhc));\ - FFw_2 = FFw*FFw;\ - FFd_QfB = FFT_fbS*itf*FFw_2;\ - FFa_w = FFw_2*(1.0+2.0*FFa/FFs);\ - FFd_TfB = FFT_fbS*FFa_w;\ - FFT_pcS = fthc*thcs_t;\ - if(latb <= 0.0 && latl <= 0.0) begin\ - FFQ_fC = FFT_pcS*itf*FFw_2;\ - FFT_fC = FFT_pcS*FFa_w;\ - FFQ_cT = FFQ_fC;\ - FFT_cT = FFT_fC;\ - end else begin\ - `HICQFC(itf,I_CK,FFT_pcS,FFQ_fC,FFQ_cT,FFT_fC,FFT_cT)\ - end\ - Q_f = Q_f+FFd_QfB;\ - T_f = T_f+FFd_TfB;\ - Q_fT = Q_f+hfe*FFd_QfE+hfc*FFQ_cT;\ - T_fT = T_f+hfe*FFd_TfE+hfc*FFT_cT;\ - Q_f = Q_f+FFd_QfE+FFQ_fC;\ - T_f = T_f+FFd_TfE+FFT_fC;\ - end - - -// IDEAL DIODE (WITHOUT CAPACITANCE): -// conductance calculation not required -// INPUT: -// IS, IST : saturation currents (model parameter related) -// UM1 : ideality factor -// U : branch voltage -// IMPLICIT INPUT: -// VT : thermal voltage -// OUTPUT: -// Iz : diode current -`define HICDIO(IS,IST,UM1,U,Iz)\ - DIOY = U/(UM1*VT);\ - if (IS > 0.0) begin\ - if (DIOY > `Dexp_lim) begin\ - le = (1 + (DIOY - `Dexp_lim));\ - DIOY = `Dexp_lim;\ - end else begin\ - le = 1;\ - end\ - le = le*limexp(DIOY);\ - Iz = IST*(le-1.0);\ - if(DIOY <= -14.0) begin\ - Iz = -IST;\ - end\ - end else begin\ - Iz = 0.0;\ - end - - -// CRITICAL CURRENT INDICATING ONSET OF HIGH CURRENT EFFECTS -// INPUT: -// v_c : unsmoothed effective collector voltage -// Orci0_t : reciprocal of low-field epi resistance -// vlim_t : limitation voltage -// Ovpt : reciprocal of punch-through voltage -// IMPLICIT INPUT: -// VT : thermal voltage -// OUTPUT: -// I_CK : critical current -// v_ceff : smoothed effective collector voltage -`define HICICK(v_c,Orci0_t,vlim_t,Ovpt,I_CK,v_ceff)\ - ICKv = v_c/VT;\ - if (ICKv < `ICKexp_lim) begin\ - v_ceff = (1.0+ln(1+exp(ICKv-1.0)))*VT;\ - end else begin\ - v_ceff = v_c;\ - end\ - ICKv = v_ceff/vlim_t;\ - I_CK = v_ceff*Orci0_t/sqrt(1.0+ICKv*ICKv);\ - ICKa = (v_ceff-vlim_t)*Ovpt;\ - I_CK = I_CK*(1.0+0.5*(ICKa+sqrt(ICKa*ICKa+1.0e-3))); - - -// SIMPLE AVALANCHE GENERATION CURRENT -// INPUT: -// itf : forward component of the transfer current -// Ucap : junction voltage -// Cjci : junction capacitance -// IMPLICIT INPUT: -// cjci0_t,vdci_t,qavl_t,favl_t : related to model parameters -// OUTPUT: -// iavl : current generated by avalanche effect -`define HICAVL(itf,Ucap,Cjci,iavl)\ - if(Ucap < 0.0 && favl_t > 0.0 && cjci0_t > 0.0) begin\ - AVLv_bord = vdci_t-Ucap;\ - AVLv_q = qavl_t/Cjci;\ - AVLU0 = qavl_t/cjci0_t;\ - if(AVLv_bord > AVLU0) begin\ - AVLa = favl_t*exp(-AVLv_q/AVLU0);\ - AVLS_avl= AVLa*(AVLU0+(1.0+AVLv_q/AVLU0)*(AVLv_bord-AVLU0));\ - end else begin\ - AVLS_avl = favl_t*AVLv_bord*exp(-AVLv_q/AVLv_bord);\ - end\ - iavl = itf*AVLS_avl;\ - end else begin\ - iavl = 0.0;\ - end - - -// TUNNELING CURRENT FOR EMITTER-BASE BREAKDOWN -// INPUT: -// mostly related to model parameters at different temperature -// abx, aby : bandgap voltages -// Cp_t, Ci_t : peripheral and intrinsic c-b junction cap at zero bias -// Vp_t, Vi_t : peripheral and intrinsic c-b built-in potential -// Upp, Uii : peripheral and intrinsic c-b junction voltages -// Cpp, Cii : peripheral and intrinsic c-b capacitances -// IMPLICIT INPUT: -// tunode,cjep0,vdep,zep,cjei0,vdei,zei : model parameters -// OUTPUT: -// Itun : current generated by tunneling effect -`define HICTUN(Cp_t,Vp_t,Upp,Cpp,Itun)\ - if(Upp < 0.0) begin\ - if(cjep0 > 0.0) begin\ - a_eg = (vgb-2.55e-4*Tnom)/(vgb-2.55e-4*Tdev);\ - ab = (Cp_t/cjep0)*sqrt(a_eg)*Vp_t*Vp_t/(vdep*vdep);\ - ibets_t = ibets*ab;\ - end else begin\ - ibets_t = ibets;\ - end\ - vve = -Upp/Vp_t;\ - cce = Cpp/Cp_t;\ - zex = 1.0/zep;\ - pocce = exp((1-zex)*ln(cce));\ - czz = ibets_t*vve*pocce;\ - Itun = czz*exp(-abet/pocce);\ - end else begin\ - Itun = 0.0;\ - end - - -// TEMPERATURE UPDATE OF JUNCTION CAPACITANCE RELATED PARAMETERS -// INPUT: -// mostly model parameters -// x : zero bias junction capacitance -// y : junction built-in potencial -// z : grading co-efficient -// w : ratio of maximum to zero-bias value of capacitance or punch-through voltage -// is_al : condition factor to check what "w" stands for -// ww : band-gap voltage -// IMPLICIT INPUT: -// VT : thermal voltage -// vt0,qtt0,ln_qtt0,V_gT : other model variables -// OUTPUT: -// x_t : temperature update of "x" -// y_t : temperature update of "y" -// w_t : temperature update of "w" - -`define TMPHICJ(x,y,z,w,is_al,x_t,y_t,w_t)\ - if (x > 0.0) begin\ - vdj0 = y*qtt0-V_gT;\ - vdj1 = 0.1*y;\ - vdjt = (vdj0-vdj1)/VT;\ - if (vdjt < `LN_EXP_LIMIT )\ - y_t = vdj1+VT*ln(1.0+exp(vdjt));\ - else\ - y_t = vdj0;\ - x_t = x*exp(z*ln(y/y_t));\ - if (is_al == 1)\ - w_t = w*y_t/y;\ - else\ - w_t = w;\ - end else begin\ - x_t = x;\ - y_t = y;\ - w_t = w;\ - end - - -//INTERNAL BASE RESISTANCE DEPENDENT ON QP-CHANGE AND I_BI -// INPUT: -// R_BI0, f_dqr0, F_GEO, f_qi : model parameters at device temperature -// Q_p0, Q_jei, Q_f : different charge components (section 2.1.6) -// ibei : diode current for internal b-e junction -// IMPLICIT INPUT: -// VT : thermal voltage -// OUTPUT: -// R_BI : charge and bias dependent internal base resistance -// Qjci is omitted to avoid any numerical problem -`define HICRBI(R_BI0,f_dqr0,F_GEO,f_qi,Q_p0,Q_jei,Q_f,ibei,R_BI)\ - if(R_BI0 > 0.0) begin\ - f_QR = (1+f_dqr0)*Q_p0;\ - Qz = Q_jei+Q_f;\ - if(Q_f > 0.0) begin\ - Q_fi = Q_f*f_qi;\ - f_p = (Q_jei+Q_fi)/Qz;\ - end else begin\ - f_p = 1.0;\ - end\ - R_BI = R_BI0*f_QR/(f_QR+Qz);\ - I_BI = ibei;\ - if( I_BI >= 1.0e-20) begin\ - ETA = R_BI*I_BI*F_GEO/VT;\ - if(ETA >= 1.0e-3) begin\ - if(ETA < 0.02)\ - R_BI = R_BI*(1.0-0.5*ETA);\ - else\ - R_BI = R_BI*ln(1.0+ETA)/ETA;\ - end\ - end\ - R_BI = R_BI*f_p;\ - end else begin\ - R_BI = 0.0;\ - end - - - -module hicumL2V2p1 (c,b,e,s,tnode); - -//Node definitions - -inout c,b,e,s,tnode; -electrical c,b,e,s,ci,ei,bp,bi,si; -electrical tnode; - -//Branch definitions -branch (b,bp) iresbx; -branch (b,bp) vresbx; -branch (ci,c) irescx; -branch (ci,c) vrescx; -branch (ei,e) iresex; -branch (ei,e) vresex; -branch (bp,bi) irescb; -branch (bp,bi) vrescb; -branch (si,s) irescs; -branch (si,s) vrescs; - -// -- ########################################################### -// -- ########### Parameters initialization ################ -// -- ########################################################### - - - -//Transfer current -parameter real c10 = 1.516E-31 from [0:1]; -parameter real qp0 = 5.939E-15 from (0:1]; -parameter real ich = 1.0E11 from [0:inf); //`0' signifies infinity -parameter real hfe = 1.0 from [0:inf]; -parameter real hfc = 0.03999 from [0:inf]; -parameter real hjei = 0.435 from [0:100]; -parameter real hjci = 0.09477 from [0:100]; - -//Base-Emitter diode currents -parameter real ibeis = 3.47E-20 from [0:1]; -parameter real mbei = 1.025 from (0:10]; -parameter real ireis = 390E-12 from [0:1]; -parameter real mrei = 3 from (0:10]; -parameter real ibeps = 4.18321E-21 from [0:1]; -parameter real mbep = 1.045 from (0:10]; -parameter real ireps = 1.02846E-14 from [0:1]; -parameter real mrep = 3 from (0:10]; -parameter real mcf = 1.0 from (0:10]; - -//Base-Collector diode currents -parameter real ibcis = 3.02613E-18 from [0:1.0]; -parameter real mbci = 1.0 from (0:10]; -parameter real ibcxs = 4.576E-29 from [0:1.0]; -parameter real mbcx = 1.0 from (0:10]; - -//Base-Emitter tunneling current -parameter real ibets = 0.0 from [0:1]; -parameter real abet = 36.74 from [0:inf); - -//Base-Collector avalanche current -parameter real favl = 14.97 from [0:inf); -parameter real qavl = 7.2407E-14 from [0:inf); -parameter real alfav = 0.0; -parameter real alqav = 0.0; - -//Series resistances -parameter real rbi0 = 7.9 from [0:inf); -parameter real rbx = 13.15 from [0:inf); -parameter real fgeo = 0.724 from [0:1]; -parameter real fdqr0 = 200 from [0:1]; -parameter real fcrbi = 0.0 from [0:1]; -parameter real fqi = 1.0 from [0:1]; -parameter real re = 9.77 from [0:inf); -parameter real rcx = 10 from [0:inf); - -//Substrate transistor -parameter real itss = 2.81242E-19 from [0:1.0]; -parameter real msf = 1.0 from (0:10]; -parameter real iscs = 7.6376E-17 from [0:1.0]; -parameter real msc = 1.0 from (0:10]; -parameter real tsf = 1.733E-8 from [0:inf); - -//Intra-device substrate coupling -parameter real rsu = 800 from [0:inf); -parameter real csu = 1.778E-14 from [0:inf); - -//Depletion Capacitances -parameter real cjei0 = 5.24382E-14 from [0:inf); -parameter real vdei = 0.9956 from (0:10]; -parameter real zei = 0.4 from (0:1]; -parameter real aljei = 2.5 from [1:inf); -parameter real cjep0 = 0 from [0:inf); -parameter real vdep = 1 from (0:10]; -parameter real zep = 0.01 from (0:1]; -parameter real aljep = 2.5 from [1:inf); -parameter real cjci0 = 4.46887E-15 from [0:inf); -parameter real vdci = 0.7 from (0:10]; -parameter real zci = 0.38 from (0:1]; -parameter real vptci = 100 from (0:100]; -parameter real cjcx0 = 1.55709E-14 from [0:inf); -parameter real vdcx = 0.733 from (0:10]; -parameter real zcx = 0.34 from (0:1]; -parameter real vptcx = 100 from (0:100]; -parameter real fbc = 0.3487 from [0:1]; -parameter real cjs0 = 17.68E-15 from [0:inf); -parameter real vds = 0.621625 from (0:10]; -parameter real zs = 0.122136 from (0:1]; -parameter real vpts = 1000 from (0:1000]; - -//Diffusion Capacitances -parameter real t0 = 1.28E-12 from [0:inf); -parameter real dt0h = 260E-15 from [0:inf); -parameter real tbvl = 2.0E-13 from [0:inf); -parameter real tef0 = 0.0 from [0:inf); -parameter real gtfe = 1.0 from (0:10]; -parameter real thcs = 46E-15 from [0:inf); -parameter real alhc = 0.08913 from (0:10]; -parameter real fthc = 0.8778 from [0:1]; -parameter real rci0 = 50.4277 from (0:inf); -parameter real vlim = 0.9 from (0:10]; -parameter real vces = 0.01 from [0:1]; -parameter real vpt = 10 from [0:100]; // `0' signifies large value (infinity) -parameter real tr = 1.0E-11 from [0:inf); - -//Isolation Capacitances -parameter real ceox = 1.71992E-15 from [0:inf); -parameter real ccox = 4.9E-15 from [0:inf); - -//Non-quasi-static Effect -parameter real alqf = 0.1288 from [0:1]; -parameter real alit = 1.0 from [0:1]; - -//Noise -parameter real kf = 2.83667E-9 from [0:inf); -parameter real af = 2.0 from (0:10]; -parameter real krbi = 1.0 from (0:inf); - -//Lateral Geometry Scaling (at high current densities) -parameter real latb = 10.479 from [0:inf); -parameter real latl = 0.300012 from [0:inf); - -//Temperature dependence -parameter real vgb = 1.112 from (0:10]; -parameter real alt0 = 0.0017580; -parameter real kt0 = 4.07E-6; -parameter real zetaci = 0.7; -parameter real zetacx = 1.0; -parameter real alvs = 0.001; -parameter real alces = 0.000125; -parameter real zetarbi = 0.0; -parameter real zetarbx = 0.2; -parameter real zetarcx = 0.21; -parameter real zetare = 0.7; -parameter real alb = 0.007; - -//Self-Heating -parameter real rth = 1293.95 from [0:inf); -parameter real cth = 7.22203E-11 from [0:inf); - -//Circuit simulator specific parameters -parameter real tnom = 27.0; -parameter real dt = 0.0; //dt in relation to 300K - - - //Declaration of variables: begin - - - //Temperature and drift - real VT,Tamb,Tdev,Tnom,qtt0,qtt0_zci,ln_qtt0,r_VgVT,V_gT,dT,k; - real ireis_t,ibeis_t,ibcxs_t,ibcis_t; - real iscs_t,cje0_t,cjci0_t,cjcx0_t; - real cjs0_t,rci0_t,vlim_t; - real vces_t,thcs_t,tef0_t,rbi_t,rbi0_t; - real rbx_t,rcx_t,re_t,rsu_t,t0_t; - real vdei_t,vdci_t; - real c10_t,cjei0_t,qp0_t; - real vdcx_t,vptcx_t,cjcx01_t,cjcx02_t,vpts_t,itss_t,tsf_t; - real ibeps_t,ireps_t,cjep0_t,ibets_t,abet_t; - real aljei_t,qavl_t,favl_t,vptci_t,vdep_t,aljep_t; - - //Band-gap related - real mg,zetabci,zetabcxt,zetasct,zetatef,avs; - real k1,k2,k10,k20,vgbe0,vgbc0,vgsc0,dvg0; - real vgb0,vge0,vgc0,vgs0,vge_t0,vge_t,vgb_t,vgb_t0,vgbe_t,vgbe_t0,vt0; - - //Charge and capacitance for b-c junction - real Qjci,Cjci,Qjcx,Qjcxi,Qjcii,qjcx0_t_i,ccox1,ccox2,C_1; - real cjcx0_t_ii,cjcx0_t_i,qjcx0_t_ii,cratio_t,Cjcit,cc; - - //Charge and capacitance for b-e junction - real Qjei,Cjei,vdj1,DFe; - real Qjep,Cjep; - - //Transfer and base current, related charges and capacitances - real itf,itr,it,ibei,irei,ibci,ibep,irep,ibh_rec; - real Oich,Orci0_t,Ovpt,Otbhrec,Tf,Tr,VT_f,i_0f,i_0r,a_bpt,Q_0,Q_p,Q_bpt; - real T_f0,Q_fT,Q_bf,T_fT,b_q,Q_fC,T_fC,T_cT,I_Tf1,A,a_h,vds_t; - real Q_pT,l_it,d_Q,d_Q0; - real cbepar1,cbepar2,qrbi; - - //Diffusion charge and critical current - real Qf,Qdei,tf0; - real Qr,Qdci; - real ick; - real vc,vceff; - - //Tunneling current - real ibet; - - //Avalanche current - real iavl; - - //Base resistance - real rbi; - - //External b-c diode and cap - real ijbcx,cjcx01,cjcx02; - - //Substrate diode and cap - real ijsc,Cjs,Qjs; - - //Substrate Transistor - real HSUM,HSI_Tsu,HSa,HSb,Qdsu; - - //Self heating - real pterm,itnode,qtnode; - - //Macro test - real ICKv,ICKa; //HICICK - real AVLS_avl,AVLv_bord,AVLv_q,AVLU0,AVLa;//HICAVL - real vdj0,vdjt,vdt,d1; //TMPHICJ - real DIOY,le;//HICDIO - real FFT_fbS,FFa,FFx,FFs,FFw,FFw_2,FFd_QfB,FFd_TfB,FFT_pcS,FFQ_fC,FFT_fC,FFQ_cT,FFT_cT,FFd_TfE,FFd_QfE,FFa_w;//HICQFF - real FCz,FCw2,FCf1,FCf2,FCf3,FCf_ci,FCz_1;//HICQFC - real FCd_a,FCdaick_ditf,FCa,FCw,FCdw_daick,FCdfc_dw,FCdw_ditf,FCdfc_ditf,FCf_CT,FCdfCT_ditf,FCrt,FCln,FClnl,FClnb,FCda1_dw,FCdf1_dw,FCdf2_dw,FCdf3_dw,FCd_f;//HICQFC - real FCa1,FCa_ck,FCxl,FCxb;//HICQFC - real Dz_r,Dv_p,DV_f,DC_max,DC_c,Da,Dv_e,De,De_1,Dv_j1,Dv_r,De_2,Dv_j2,Dv_j4,DC_j1,DC_j2,DC_j3,DQ_j1,DQ_j2,DQ_j3,DCln1,DCln2,Dz1,Dzr1;//QCJMOD - real DFV_f,DFC_max,DFa,DFv_e,DFv_j,DFb,DFC_j1,DFQ_j,DFdvj_dv,DFs_q,DFs_q2;//QCJMODF - real z,a,a2,a3,r,x;//HICFCI - real FCdfCT_dw; - real f_QR,Qz,f_p,ETA,Q_fi,I_BI; //HICRBI - real a_eg,aa,ab,vve,cce,pocce,zex,czz; //HICTUN - - //Noise - real fourkt,twoq,flicker_Pwr,rbin; - - //Declaration of variables: end - -// -//======================== Transistor model formulation =================== -// - - -analog begin - - - // Temperature and resulting parameter drift - - Tnom = tnom+`P_CELSIUS0; - Tamb = $temperature; - Tdev = Tamb+dt+V(tnode); - -// Limit temperature to avoid FPE's in equations - if(Tdev < `TMIN + 273.15) - Tdev = `TMIN + 273.15; - else - if (Tdev > `TMAX + 273.15) - Tdev = `TMAX + 273.15; - - vt0 = $vt(Tnom); - VT = $vt(Tdev); - dT = Tdev-Tnom; - qtt0 = Tdev/Tnom; - ln_qtt0 = ln(qtt0); - avs = alvs*Tnom; - V_gT = 3.0*VT*ln_qtt0 + vgb*(qtt0-1.0); - r_VgVT = V_gT/VT; - - //Temperature update: begin - - //Internal b-e diode saturation currents - a = mcf*r_VgVT/mbei - alb*dT; - ibeis_t = ibeis*exp(a); - a = mcf*r_VgVT/mrei - alb*dT; - ireis_t = ireis*exp(a); - - //Internal b-e junction capacitance - `TMPHICJ(cjei0,vdei,zei,aljei,1,cjei0_t,vdei_t,aljei_t) - - //GICCR prefactor and zero bias hole charge - c10_t = c10*exp(r_VgVT); - a = vdei_t/vdei; - qp0_t = qp0*(1.0+0.5*zei*(1.0-a)); - - // Low-field internal collector resistance - qtt0_zci = exp(zetaci*ln_qtt0); - Orci0_t = 1.0/(rci0*qtt0_zci); - - //Voltage separating ohmic and saturation velocity regime - a = vlim*qtt0_zci*(1.0-alvs*dT); - k = (a-VT)/VT; - if (k < `LN_EXP_LIMIT) - vlim_t = VT + VT*ln(1.0+exp(k)); - else - vlim_t = a; - - //Internal c-e saturation voltage - vces_t = vces*(1+alces*dT); - - - //Internal b-c diode saturation current - a = r_VgVT/mbci; - ibcis_t = ibcis*exp(a); - - //Internal b-c junction capacitance - `TMPHICJ(cjci0,vdci,zci,vptci,0,cjci0_t,vdci_t,vptci_t) - - //Low-current forward transit time - t0_t = t0*(1+alt0*dT+kt0*dT*dT); - - //Neutral emitter storage time - a = 1.0+alb*dT; - k = 0.5*(a+sqrt(a*a+0.01)); - tef0_t = tef0*qtt0/k; - - //Saturation time constant at high current densities - thcs_t = thcs*qtt0_zci/qtt0; - - - //Avalanche caurrent factors - favl_t = favl*exp(alfav*dT); - qavl_t = qavl*exp(alqav*dT); - - - //Zero bias internal base resistance - rbi0_t = rbi0*exp(zetarbi*ln_qtt0); - - - //Peripheral b-e diode saturation currents - a = mcf*r_VgVT/mbep - alb*dT; - ibeps_t = ibeps*exp(a); - a = mcf*r_VgVT/mrep - alb*dT; - ireps_t = ireps*exp(a); - - //Peripheral b-e junction capacitance - `TMPHICJ(cjep0,vdep,zep,aljep,1,cjep0_t,vdep_t,aljep_t) - - - //Temperature mapping for tunneling current is done inside HICTUN - - //Depletion capacitance splitting at b-c junction - //Capacitances at peripheral and external base node - C_1 = (1.0-fbc)*(cjcx0+ccox); - if (C_1 >= ccox) begin - ccox1 = ccox; - ccox2 = 0; - cjcx01 = C_1-ccox; - cjcx02 = cjcx0-cjcx01; - end else begin - ccox1 = C_1; - ccox2 = ccox-ccox1; - cjcx01 = 0.0; - cjcx02 = cjcx0; - end - - `TMPHICJ(1.0,vdcx,zcx,vptcx,0,cratio_t,vdcx_t,vptcx_t) - cjcx01_t=cratio_t*cjcx01; - cjcx02_t=cratio_t*cjcx02; - - - //External b-c diode saturation currents - a = r_VgVT/mbcx; - ibcxs_t = ibcxs*exp(a); - - - //Constant external series resistances - rcx_t = rcx*exp(zetarcx*ln_qtt0); - rbx_t = rbx*exp(zetarbx*ln_qtt0); - re_t = re*exp(zetare*ln_qtt0); - - //Forward transit time in substrate transistor - tsf_t = tsf*exp((zetacx-1.0)*ln_qtt0); - - //Saturation transfer current for substrate transistor - a = r_VgVT/msf; - itss_t = itss*exp(a); - - //Saturation current for c-s diode - a = r_VgVT*msc; - iscs_t = iscs*exp(a); - - //Capacitance for c-s junction - `TMPHICJ(cjs0,vds,zs,vpts,0,cjs0_t,vds_t,vpts_t) - - //Temperature update:end - - //Model evaluation: begin - - //Intrinsic transistor - //Internal base currents across b-e junction - `HICDIO(ibeis,ibeis_t,mbei,V(bi,ei),ibei) - `HICDIO(ireis,ireis_t,mrei,V(bi,ei),irei) - - //HICCR: begin - - //Avoid devide-by-zer and define infinity other way - //High current correction for 2D and 3D effects - //if (ich > 0.0 && ich < inf) - if (ich > 0.0) - Oich = 1.0/ich; - else - Oich = 0.0; - - //Collector punch-through voltage - //if(vpt > 0.0 && vpt < inf) - if(vpt > 0.0) - Ovpt = 1.0/vpt; - else - Ovpt = 0.0; - - //Initialization - //Transfer current, minority charges and transit times - Tr = tr; - VT_f = mcf*VT; - i_0f = c10_t * limexp(V(bi,ei)/VT_f); - i_0r = c10_t * limexp(V(bi,ci)/VT); - - //Internal b-e and b-c junction capacitances and charges - `QCJMODF(cjei0_t,vdei_t,zei,aljei_t,V(bi,ei),Cjei,Qjei) - `HICJCAP(cjci0_t,vdci_t,zci,vptci_t,V(bi,ci),Cjci,Qjci) - - //Hole charge at low bias - - Q_0 = qp0_t + hjei*Qjei + hjci*Qjci; - if(Q_0 < 0.6*qp0_t) begin - a_bpt = 0.05; - Q_bpt = a_bpt*qp0_t; - b_q = Q_0/Q_bpt-1.0; - Q_0 = Q_bpt*(1+ln(1+exp(b_q))); - end - - //Transit time calculation at low current density - `QCJMODF(cjci0_t,vdci_t,zci,2.4,V(bi,ci),Cjcit,d1) - if(Cjcit > 0.0) - cc = cjci0_t/Cjcit; - else - cc = 1.0; - T_f0 = t0_t+dt0h*(cc-1.0)+tbvl*(1/cc-1.0); - - //Effective collector voltage - vc = V(ci,ei)-vces_t; - - //Critical current for onset of high-current effects - `HICICK(vc,Orci0_t,vlim_t,Ovpt,ick,vceff) - - //Initial formulation of forward and reverse component of transfer current - if (T_f0 > 0.0 || Tr > 0.0) begin - A = 0.5*Q_0; - Q_p = A+sqrt(A*A+T_f0*i_0f+Tr*i_0r); - end else begin - Q_p = Q_0; - end - - I_Tf1 =i_0f/Q_p; - a_h = Oich*I_Tf1; - itf = I_Tf1*(1.0+a_h); - itr = i_0r/Q_p; - - //Initial formulation of forward transit time, diffusion, GICCR and excess b-c charge - Tf = T_f0; - Qf = T_f0*itf; - `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT) - - //Initial formulation of reverse diffusion charge - Qr = Tr*itr; - - //Preparation for iteration to get total hole charge and related variables - l_it = 0; - if(Qf > `RTOLC*Q_p || a_h > `RTOLC) begin - //Iteration for Q_pT requires improved initial solution - Qf = sqrt(T_f0*itf*Q_fT); - Q_pT = Q_0+Qf+Qr; - d_Q = Q_pT; - while (abs(d_Q) >= `RTOLC*abs(Q_pT) && l_it <= `l_itmax) begin - d_Q0 = d_Q; - I_Tf1 = i_0f/Q_pT; - a_h = Oich*I_Tf1; - itf = I_Tf1*(1.0+a_h); - itr = i_0r/Q_pT; - Tf = T_f0; - Qf = T_f0*itf; - `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT) - Qr = Tr*itr; - if(Oich == 0.0) - a = 1.0+(T_fT*itf+Qr)/Q_pT; - else - a = 1.0+(T_fT*I_Tf1*(1.0+2.0*a_h)+Qr)/Q_pT; - d_Q = -(Q_pT-(Q_0+Q_fT+Qr))/a; - //Limit maximum change of Q_pT - a = abs(0.3*Q_pT); - if(abs(d_Q) > a) begin - if (d_Q>=0) - d_Q = a; - else - d_Q = -a; - end - Q_pT = Q_pT+d_Q; - l_it = l_it+1; - end //while - - I_Tf1 = i_0f/Q_pT; - a_h = Oich*I_Tf1; - itf = I_Tf1*(1.0+a_h); - itr = i_0r/Q_pT; - - //Final transit times, charges and transport current components - Tf = T_f0; - Qf = T_f0*itf; - `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT) - Qr = Tr*itr; - - end //if - - //Currently no NQS effect implemented for Qf and itf - - it = itf-itr; - - //Diffusion charges for further use - Qdei = Qf; - Qdci = Qr; - - //High-frequency emitter current crowding (lateral NQS) - //Currently not accurate: using ddx() operator may provide right formulation - qrbi = fcrbi*(Qjei+Qdei+Qjci+Qdci); - - //HICCR: end - - //Internal base current across b-c junction - `HICDIO(ibcis,ibcis_t,mbci,V(bi,ci),ibci) - - //Avalanche current - `HICAVL(itf,V(bi,ci),Cjci,iavl) - - //Internal base resistance - `HICRBI(rbi0_t,fdqr0,fgeo,fqi,qp0_t,Qjei,Qf,ibei,rbi) - - //Base currents across peripheral b-e junction - `HICDIO(ibeps,ibeps_t,mbep,V(bp,ei),ibep) - `HICDIO(ireps,ireps_t,mrep,V(bp,ei),irep) - - //Peripheral b-e junction capacitance and charge - `QCJMODF(cjep0_t,vdep_t,zep,aljep_t,V(bp,ei),Cjep,Qjep) - - //Tunneling current - //a_eg = (vgb-2.55e-4*Tnom)/(vgb-2.55e-4*Tdev); - `HICTUN(cjep0_t,vdep_t,V(bp,ei),Cjep,ibet) - - //Depletion capacitance and charge at peripheral b-c junction (bp,ci) - `HICJCAP(cjcx02_t,vdcx_t,zcx,vptcx_t,V(bp,ci),cjcx0_t_ii,qjcx0_t_ii) - - //Base currents across peripheral b-c junction (bp,ci) - `HICDIO(ibcxs,ibcxs_t,mbcx,V(bp,ci),ijbcx) - - //Depletion capacitance and charge at external b-c junction (b,ci) - `HICJCAP(cjcx01_t,vdcx_t,zcx,vptcx_t,V(b,ci),cjcx0_t_i,qjcx0_t_i) - - //Depletion substrate capacitance and charge at s-c junction (si,ci) - `HICJCAP(cjs0_t,vds_t,zs,vpts_t,V(si,ci),Cjs,Qjs) - - //Parasitic substrate transistor transfer current and diffusion charge - if(itss > 0.0) begin - HSUM = msf*VT; - HSa = limexp(V(bp,ci)/HSUM); - HSb = limexp(V(si,ci)/HSUM); - HSI_Tsu = itss_t*(HSa-HSb); - if(tsf > 0.0) begin - Qdsu = tsf_t*itss_t*HSa; - end else begin - Qdsu = 0.0; - end - end else begin - HSI_Tsu = 0.0; - Qdsu = 0.0; - end - - //Diode current for s-c junction (si,ci) - `HICDIO(iscs,iscs_t,msc,V(si,ci),ijsc) - - //Self-heating calculation - if (rth > 0.0) begin - pterm = V(ci,ei)*it + (vdci_t-V(bi,ci))*iavl; - end - - //Model evaluation: end - - - //Define branch sources: begin - - I(bp,ei) <+ -ibet+ibep+irep; - I(bi,ei) <+ ibei+irei; - I(bp,si) <+ HSI_Tsu; - I(bp,ci) <+ ijbcx; - I(bi,ci) <+ ibci-iavl; - I(si,ci) <+ ijsc; - I(ci,ei) <+ it; - - I(b,ci) <+ ddt(ccox1*V(b,ci)); - I(bp,ci) <+ ddt(ccox2*V(bp,ci)); - I(bp,e) <+ ddt(ceox*V(bp,e)); - - I(si,ci) <+ ddt(Qjs); - I(bp,ei) <+ ddt(Qjep); - I(bi,ei) <+ ddt(Qdei+Qjei); - I(bp,ci) <+ ddt(qjcx0_t_ii+Qdsu); - I(bi,ci) <+ ddt(Qdci+Qjci); - I(b,ci) <+ ddt(qjcx0_t_i); - - if (rbx > 0.0) begin - I(iresbx) <+ V(iresbx)/rbx_t; - end else begin - I(iresbx) <+ V(iresbx)/1e-6; - //V(vresbx) <+ 0.0; - end - if(rbi0 > 0.0) begin - I(irescb) <+ V(irescb)/rbi; - I(irescb) <+ ddt(qrbi); - end else begin - I(irescb) <+ V(irescb)/1e-6; - //V(vrescb) <+ 0.0; - end - if (rcx > 0.0) begin - I(irescx) <+ V(irescx)/rcx_t; - end else begin - I(irescx) <+ V(irescx)/1e-6; - //V(vrescx) <+ 0.0; - end - if (re > 0.0) begin - I(iresex) <+ V(iresex)/re_t; - end else begin - I(iresex) <+ V(iresex)/1e-6; - //V(vresex) <+ 0.0; - end - if(rsu > 0.0) begin - I(irescs) <+ V(irescs)/rsu; - I(irescs) <+ ddt(csu*V(irescs)); - end else begin - I(irescs) <+ V(irescs)/1e-6; - //V(vrescs) <+ 0.0; - end - if(rth > 0.0) begin - I(tnode) <+ V(tnode)/rth; - I(tnode) <+ -pterm; - I(tnode) <+ ddt(cth*V(tnode)); - end else begin - I(tnode) <+ V(tnode)/1e-6; - //V(tnode) <+ 0.0; - end - //Define branch source: end - - //Define noise sources: begin - - //Thermal noise - fourkt = 4.0 * `P_K * Tdev; - if(rbx > 0.0) - I(iresbx) <+ white_noise(fourkt/rbx_t, "thermal"); - if(rbi0 > 0.0) begin - rbin = krbi * rbi; - I(irescb) <+ white_noise(fourkt/rbin, "thermal"); - end - if(rcx > 0.0) - I(irescx) <+ white_noise(fourkt/rcx_t, "thermal"); - if(re > 0.0) - I(iresex) <+ white_noise(fourkt/re_t, "thermal"); - if(rsu > 0.0) - I(irescs) <+ white_noise(fourkt/rsu, "thermal"); - - //Flicker noise - flicker_Pwr = kf*pow((ibei+ibep),af); - I(bi,ei) <+ flicker_noise(flicker_Pwr,1.0); - - //Shot noise - twoq = 2.0 * `P_Q; - I(ci,ei) <+ white_noise(twoq*it, "shot"); - I(ci,bi) <+ white_noise(twoq*iavl, "shot"); - I(bi,ei) <+ white_noise(twoq*ibei, "shot"); - I(bi,ci) <+ white_noise(twoq*ibci, "shot"); - I(bp,ei) <+ white_noise(twoq*ibep, "shot"); - I(bp,ci) <+ white_noise(twoq*ijbcx, "shot"); - I(si,ci) <+ white_noise(twoq*ijsc, "shot"); - - //Correlated noise not yet implemented - - //Define noise sources: end - - -end //analog -endmodule diff --git a/qucs-core/src/components/verilog/hicumL2V2p22.va b/qucs-core/src/components/verilog/hicumL2V2p22.va deleted file mode 100644 index 7b2116fe78..0000000000 --- a/qucs-core/src/components/verilog/hicumL2V2p22.va +++ /dev/null @@ -1,1532 +0,0 @@ -//HICUM Level_2 Version_2.22: A Verilog-A Description - -// 01/06: Bug fix and optimization -// FCdf1_dw assigned expression (missing in v2.21) -// FCa and FCa1 are found to have same expression: FCa is omitted in those cases -// FCa1 written instead of FCa in the expression for FCf_ci -// Thermal node "tnode" set as external -// zetasct = mg+1-2.5 changed to zetasct = mg-1.5; -// Code optimization: Temperature dependent parts are moduled in two separate blocks: -// within @(initial_model) when self-heating is OFF -// outside @(initial_model) when self-heating is ON -// 03/06 : Further fix -// vlim_t,ibcis_t,ibcxs_t,itss_t,iscs_t considered in compatibility block -// ddt() operators are separated in contribution expressions. -// FLCOMP parameter is given different values -// 05/06: -// all if-else blocks marked with begin-end -// unused variables deleted -// all series resistors and RTH are allowed to have a minimum value MIN_R -// only tunelling current source contribution within if-then-else -// 06/06: HICRBI deleted and instead the code changed (hyperbolic smoothing in -// conductivity modulation part) and put in relevant portion of the code. -// 07/06: ddx() operator used to find out capacitances from charges: -// QJMODF,QJMOD,HICJQ changed accordingly -// Lateral NQS effect modified with ddx() operator. -// HICFCT included for downward compatibility reason. -// Few macros are taken inside the code: HICICK, HICAVL, HICTUN (more optimized), -// internal base resistance (Qjci included under conductivity modulation, hyperbolic smoothing used) -// Gmin added at (bi,ei) and (bi,ci) branches. -// 08/06: Units added in the parameter descriptions. - -// ********************************************************************************* -// 06/06: Comment on NODE COLLAPSING: -// Presently this verilog code permits a minimum of 1 milli-Ohm resistance for any -// series resistance as well as for thermal resistance RTH. If any of the resistance -// values drops below this minimum value, the corresponding nodes are shorted with -// zero voltage contribution. We want the model compilers/simulators deal this -// situation in such a manner that the corresponding node is COLLAPSED. -// We expect that the simulators should permit current contribution statement -// for any branch with resistance value more than (or equal to) 1 milli-Ohm without -// any convergence problem. In fact, we wish NOT to have to use a voltage contribution -// statement in our Verilog code, except as an indication for the model compiler/simulator -// to interprete a zero branch voltage as NODE-COLLAPSING action. -// ********************************************************************************** -// ********************************************************************************** -// 06/06: Comment on Implementation of Non-Quasi-Static Effect: -// This code does not have NQS effect implemented yet. Up to now we recommend Weil's -// approach, which is implemented in DEVICE FTN code and built-in v2.1 HICUM model -// inside most of the circuit simulators. Using Verilog, it is not presently possible -// to implement Weil's approach, since there remains hardly any possibility to access -// previous time-step of simulation. Providing C-code will not even serve the purpose, -// since we are not aware of the specific time-steps for various simulators. Instead, -// we recommend the EDA vendors to use their previous implementation (piece of code -// for NQS effect) for this model code in appropriate position, once it is converted -// into C-code by the model compilers. At present only this solution seems feasible. -// ********************************************************************************** - - -//Default simulator: Spectre - -`ifdef insideADMS - `define MODEL @(initial_model) - `define NOISE @(noise) - `define ATTR(txt) (*txt*) -`else - `define MODEL - `define NOISE - `define ATTR(txt) -`endif - - -`define VPT_thresh 1.0e2 -`define Dexp_lim 80.0 -`define Cexp_lim 80.0 -`define DFa_fj 1.921812 -`define RTOLC 1.0e-5 -`define l_itmax 100 -`define TMAX 326.85 -`define TMIN -100.0 -`define LN_EXP_LIMIT 11.0 -`define MIN_R 0.001 -`define Gmin 1.0e-12 - -//ADS -`include "constants.vams" -`include "disciplines.vams" -//`include "compact.vams" - -//Spectre -//`include "constants.h" -//`include "discipline.h" - - -// DEPLETION CHARGE CALCULATION -// Hyperbolic smoothing used; no punch-through -// INPUT: -// c_0 : zero-bias capacitance -// u_d : built-in voltage -// z : exponent coefficient -// a_j : control parameter for C peak value at high forward bias -// U_cap : voltage across junction -// IMPLICIT INPUT: -// VT : thermal voltage -// OUTPUT: -// Qz : depletion Charge -`define QJMODF(c_0,u_d,z,a_j,U_cap,Qz)\ - if(c_0 > 0.0) begin\ - DFV_f = u_d*(1.0-exp(-ln(a_j)/z));\ - DFv_e = (DFV_f-U_cap)/VT;\ - DFs_q = sqrt(DFv_e*DFv_e+`DFa_fj);\ - DFs_q2 = (DFv_e+DFs_q)*0.5;\ - DFv_j = DFV_f-VT*DFs_q2;\ - DFb = ln(1.0-DFv_j/u_d);\ - DFQ_j = c_0*u_d*(1.0-exp(DFb*(1.0-z)))/(1.0-z);\ - Qz = DFQ_j+a_j*c_0*(U_cap-DFv_j);\ - end else begin\ - Qz = 0.0;\ - end - - -// DEPLETION CHARGE CALCULATION CONSIDERING PUNCH THROUGH -// smoothing of reverse bias region (punch-through) -// and limiting to a_j=Cj,max/Cj0 for forward bias. -// Important for base-collector and collector-substrate junction -// INPUT: -// c_0 : zero-bias capacitance -// u_d : built-in voltage -// z : exponent coefficient -// a_j : control parameter for C peak value at high forward bias -// v_pt : punch-through voltage (defined as qNw^2/2e) -// U_cap : voltage across junction -// IMPLICIT INPUT: -// VT : thermal voltage -// OUTPUT: -// Qz : depletion charge -`define QJMOD(c_0,u_d,z,a_j,v_pt,U_cap,Qz)\ - if(c_0 > 0.0) begin\ - Dz_r = z/4.0;\ - Dv_p = v_pt-u_d;\ - DV_f = u_d*(1.0-exp(-ln(a_j)/z));\ - DC_max = a_j*c_0;\ - DC_c = c_0*exp((Dz_r-z)*ln(v_pt/u_d));\ - Dv_e = (DV_f-U_cap)/VT;\ - if(Dv_e < `Cexp_lim) begin\ - De = exp(Dv_e);\ - Dv_j1 = DV_f-VT*ln(1.0+De);\ - end else begin\ - Dv_j1 = U_cap;\ - end\ - Da = 0.1*Dv_p+4.0*VT;\ - Dv_r = (Dv_p+Dv_j1)/Da;\ - if(Dv_r < `Cexp_lim) begin\ - De = exp(Dv_r);\ - Dv_j2 = -Dv_p+Da*ln(1.0+De);\ - end else begin\ - Dv_j2 = Dv_j1;\ - end\ - Dv_j4 = U_cap-Dv_j1;\ - DCln1 = ln(1.0-Dv_j1/u_d);\ - DCln2 = ln(1.0-Dv_j2/u_d);\ - Dz1 = 1.0-z;\ - Dzr1 = 1.0-Dz_r;\ - DQ_j1 = c_0*(1.0-exp(DCln2*Dz1))/Dz1;\ - DQ_j2 = DC_c*(1.0-exp(DCln1*Dzr1))/Dzr1;\ - DQ_j3 = DC_c*(1.0-exp(DCln2*Dzr1))/Dzr1;\ - Qz = (DQ_j1+DQ_j2-DQ_j3)*u_d+DC_max*Dv_j4;\ - end else begin\ - Qz = 0.0;\ - end - - - - -// DEPLETION CHARGE CALCULATION SELECTOR -// Dependent on junction punch-through voltage -// Important for collector related junctions -`define HICJQ(c_0,u_d,z,v_pt,U_cap,Qz)\ - if(v_pt < `VPT_thresh) begin\ - `QJMOD(c_0,u_d,z,2.4,v_pt,U_cap,Qz)\ - end else begin\ - `QJMODF(c_0,u_d,z,2.4,U_cap,Qz)\ - end - - - -// A CALCULATION NEEDED FOR COLLECTOR MINORITY CHARGE FORMULATION -// INPUT: -// zb,zl : zeta_b and zeta_l (model parameters, TED 10/96) -// w : normalized injection width -// OUTPUT: -// hicfcio : function of equation (2.1.17-10) -`define HICFCI(zb,zl,lnzb,w,hicfcio,dhicfcio_dw)\ - z = zb*w;\ - if(z > 1.0e-6) begin\ - x = 1.0+z;\ - a = x*x;\ - a2 = 0.250*(a*(2.0*lnzb-1.0)+1.0);\ - a3 = (a*x*(3.0*lnzb-1.0)+1.0)/9.0;\ - r = zl/zb;\ - hicfcio = ((1.0-r)*a2+r*a3)/zb;\ - dhicfcio_dw = ((1.0-r)*x+r*a)*lnzb;\ - end else begin\ - a = z*z;\ - a2 = 3.0+z-0.5*a+z*a;\ - a3 = -2.0*z+1.5*a+2.0*a*a/3.0;\ - hicfcio = (zb*a2+zl*a3)*w*w/6.0;\ - dhicfcio_dw = z+0.5*a-a*z/3.0+5.0*a*a/6.0+zl*w*(a-z+2.0*a*a/3.0);\ - end - - -// NEEDED TO CALCULATE WEIGHTED ICCR COLLECTOR MINORITY CHARGE -// INPUT: -// z : zeta_b or zeta_l -// w : normalized injection width -// OUTPUT: -// hicfcto : output -// dhicfcto_dw : derivative of output wrt w -`define HICFCT(z,lnz,w,hicfcto,dhicfcto_dw)\ - a = z*w;\ - if (a > 1.0e-6) begin\ - hicfcto = (a - lnz)/z;\ - dhicfcto_dw = a / (1.0 + a);\ - end else begin\ - hicfcto = 0.5 * a * w;\ - dhicfcto_dw = a;\ - end - - -// COLLECTOR CURRENT SPREADING CALCULATION -// collector minority charge incl. 2D/3D current spreading (TED 10/96) -// INPUT: -// Ix : forward transport current component (itf) -// I_CK : critical current -// FFT_pcS : dependent on fthc and thcs (parameters) -// IMPLICIT INPUT: -// ahc, latl, latb : model parameters -// VT : thermal voltage -// OUTPUT: -// Q_fC, Q_CT: actual and ICCR (weighted) hole charge -// T_fC, T_cT: actual and ICCR (weighted) transit time -// Derivative dfCT_ditf not properly implemented yet -`define HICQFC(Ix,I_CK,FFT_pcS,Q_fC,Q_CT,T_fC,T_cT)\ - Q_fC = FFT_pcS*Ix;\ - FCa = 1.0-I_CK/Ix;\ - FCrt = sqrt(FCa*FCa+ahc);\ - FCa_ck = 1.0-(FCa+FCrt)/(1.0+sqrt(1.0+ahc));\ - FCdaick_ditf = (FCa_ck-1.0)*(1-FCa)/(FCrt*Ix);\ - if(latb > latl) begin\ - FCz = latb-latl;\ - FCxl = 1.0+latl;\ - FCxb = 1.0+latb;\ - if(latb > 0.01) begin\ - FCln = ln(FCxb/FCxl);\ - FCa1 = exp((FCa_ck-1.0)*FCln);\ - FCd_a = 1.0/(latl-FCa1*latb);\ - FCw = (FCa1-1.0)*FCd_a;\ - FCdw_daick = -FCz*FCa1*FCln*FCd_a*FCd_a;\ - FClnb = ln(1.0+latb*FCw);\ - FClnl = ln(1.0+latl*FCw);\ - FCa1 = FClnb - FClnl;\ - FCda1_dw = latb/(1.0+latb*FCw) - latl/(1.0+latl*FCw);\ - end else begin\ - FCf1 = 1.0-FCa_ck;\ - FCd_a = 1.0/(1.0-FCf1*latb);\ - FCw = FCf1*FCd_a;\ - FCdw_daick = -1.0*FCd_a*FCd_a;\ - FClnb = latb*FCw;\ - FClnl = latl*FCw;\ - FCa1 = FCz*FCw;\ - FCda1_dw = FCz;\ - end\ - FCf_CT = 2.0/FCz;\ - FCw2 = FCw*FCw;\ - FCf1 = latb*latl*FCw*FCw2/3.0+(latb+latl)*FCw2/2.0+FCw;\ - FCdf1_dw = latb*latl*FCw2 + (latb+latl)*FCw + 1.0;\ - `HICFCI(latb,latl,FClnb,FCw,FCf2,FCdf2_dw)\ - `HICFCI(latl,latb,FClnl,FCw,FCf3,FCdf3_dw)\ - FCf_ci = FCf_CT*(FCa1*FCf1-FCf2+FCf3);\ - FCdfc_dw = FCf_CT*(FCa1*FCdf1_dw+FCda1_dw*FCf1-FCdf2_dw+FCdf3_dw);\ - FCdw_ditf = FCdw_daick*FCdaick_ditf;\ - FCdfc_ditf = FCdfc_dw*FCdw_ditf;\ - if(flcomp == 0.0 || flcomp == 2.1) begin\ - `HICFCT(latb,FClnb,FCw,FCf2,FCdf2_dw)\ - `HICFCT(latl,FClnl,FCw,FCf3,FCdf3_dw)\ - FCf_CT = FCf_CT*(FCf2-FCf3);\ - FCdfCT_dw = FCf_CT*(FCdf2_dw-FCdf3_dw);\ - FCdfCT_ditf = FCdfCT_dw*FCdw_ditf;\ - end else begin\ - FCf_CT = FCf_ci;\ - FCdfCT_ditf = FCdfc_ditf;\ - end\ - end else begin\ - if(latb > 0.01) begin\ - FCd_a = 1.0/(1.0+FCa_ck*latb);\ - FCw = (1.0-FCa_ck)*FCd_a;\ - FCdw_daick = -(1.0+latb)*FCd_a*FCd_a;\ - end else begin\ - FCw = 1.0-FCa_ck-FCa_ck*latb;\ - FCdw_daick = -(1.0+latb);\ - end\ - FCw2 = FCw*FCw;\ - FCz = latb*FCw;\ - FCz_1 = 1.0+FCz;\ - FCd_f = 1.0/(FCz_1);\ - FCf_ci = FCw2*(1.0+FCz/3.0)*FCd_f;\ - FCdfc_dw = 2.0*FCw*(FCz_1+FCz*FCz/3.0)*FCd_f*FCd_f;\ - FCdw_ditf = FCdw_daick*FCdaick_ditf;\ - FCdfc_ditf = FCdfc_dw*FCdw_ditf;\ - if(flcomp == 0.0 || flcomp == 2.1) begin\ - if (FCz > 0.001) begin\ - FCf_CT = 2.0*(FCz_1*ln(FCz_1)-FCz)/(latb*latb*FCz_1);\ - FCdfCT_dw = 2.0*FCw*FCd_f*FCd_f;\ - end else begin\ - FCf_CT = FCw2*(1.0-FCz/3.0)*FCd_f;\ - FCdfCT_dw = 2.0*FCw*(1.0-FCz*FCz/3.0)*FCd_f*FCd_f;\ - end\ - FCdfCT_ditf = FCdfCT_dw*FCdw_ditf;\ - end else begin\ - FCf_CT = FCf_ci;\ - FCdfCT_ditf = FCdfc_ditf;\ - end\ - end\ - Q_CT = Q_fC*FCf_CT;\ - Q_fC = Q_fC*FCf_ci;\ - T_fC = FFT_pcS*(FCf_ci+Ix*FCdfc_ditf);\ - T_cT = FFT_pcS*(FCf_CT+Ix*FCdfCT_ditf); - -// TRANSIT-TIME AND STORED MINORITY CHARGE -// INPUT: -// itf : forward transport current -// I_CK : critical current -// T_f : transit time \ -// Q_f : minority charge / for low current -// IMPLICIT INPUT: -// tef0, gtfe, fthc, thcs, ahc, latl, latb : model parameters -// OUTPUT: -// T_f : transit time \ -// Q_f : minority charge / transient analysis -// T_fT : transit time \ -// Q_fT : minority charge / ICCR (transfer current) -// Q_bf : excess base charge -`define HICQFF(itf,I_CK,T_f,Q_f,T_fT,Q_fT,Q_bf)\ - if(itf < 1.0e-6*I_CK) begin\ - Q_fT = Q_f;\ - T_fT = T_f;\ - end else begin\ - FFa = I_CK/itf;\ - FFd_TfE = tef0_t*exp(-gtfe*ln(FFa));\ - FFd_QfE = FFd_TfE*itf/(gtfe+1.0);\ - FFT_fbS = (1.0-fthc)*thcs_t;\ - FFx = 1.0-FFa;\ - FFs = sqrt(FFx*FFx+ahc);\ - FFw = (FFx+FFs)/(1.0+sqrt(1.0+ahc));\ - FFw_2 = FFw*FFw;\ - FFd_QfB = FFT_fbS*itf*FFw_2;\ - Q_bf = FFd_QfB;\ - FFa_w = FFw_2*(1.0+2.0*FFa/FFs);\ - FFd_TfB = FFT_fbS*FFa_w;\ - FFT_pcS = fthc*thcs_t;\ - if(latb <= 0.0 && latl <= 0.0) begin\ - FFQ_fC = FFT_pcS*itf*FFw_2;\ - FFT_fC = FFT_pcS*FFa_w;\ - FFQ_cT = FFQ_fC;\ - FFT_cT = FFT_fC;\ - end else begin\ - `HICQFC(itf,I_CK,FFT_pcS,FFQ_fC,FFQ_cT,FFT_fC,FFT_cT)\ - end\ - Q_f = Q_f+FFd_QfB;\ - T_f = T_f+FFd_TfB;\ - Q_fT = Q_f+hfe*FFd_QfE+hfc*FFQ_cT;\ - T_fT = T_f+hfe*FFd_TfE+hfc*FFT_cT;\ - Q_f = Q_f+FFd_QfE+FFQ_fC;\ - T_f = T_f+FFd_TfE+FFT_fC;\ - end - - - - -// IDEAL DIODE (WITHOUT CAPACITANCE): -// conductance calculation not required -// INPUT: -// IS, IST : saturation currents (model parameter related) -// UM1 : ideality factor -// U : branch voltage -// IMPLICIT INPUT: -// VT : thermal voltage -// OUTPUT: -// Iz : diode current -`define HICDIO(IS,IST,UM1,U,Iz)\ - DIOY = U/(UM1*VT);\ - if (IS > 0.0) begin\ - if (DIOY > `Dexp_lim) begin\ - le = (1 + (DIOY - `Dexp_lim));\ - DIOY = `Dexp_lim;\ - end else begin\ - le = 1;\ - end\ - le = le*limexp(DIOY);\ - Iz = IST*(le-1.0);\ - if(DIOY <= -14.0) begin\ - Iz = -IST;\ - end\ - end else begin\ - Iz = 0.0;\ - end - - - -// TEMPERATURE UPDATE OF JUNCTION CAPACITANCE RELATED PARAMETERS -// INPUT: -// mostly model parameters -// x : zero bias junction capacitance -// y : junction built-in potencial -// z : grading co-efficient -// w : ratio of maximum to zero-bias value of capacitance or punch-through voltage -// is_al : condition factor to check what "w" stands for -// vgeff : band-gap voltage -// IMPLICIT INPUT: -// VT : thermal voltage -// vt0,qtt0,ln_qtt0,mg : other model variables -// OUTPUT: -// c_j_t : temperature update of "c_j" -// vd_t : temperature update of "vd0" -// w_t : temperature update of "w" -`define TMPHICJ(c_j,vd0,z,w,is_al,vgeff,c_j_t,vd_t,w_t)\ - if (c_j > 0.0) begin\ - vdj0 = 2*vt0*ln(exp(vd0*0.5/vt0)-exp(-0.5*vd0/vt0));\ - vdjt = vdj0*qtt0+vgeff*(1-qtt0)-mg*VT*ln_qtt0;\ - vdt = vdjt+2*VT*ln(0.5*(1+sqrt(1+4*exp(-vdjt/VT))));\ - vd_t = vdt;\ - c_j_t = c_j*exp(z*ln(vd0/vd_t));\ - if (is_al == 1) begin\ - w_t = w*vd_t/vd0;\ - end else begin\ - w_t = w;\ - end\ - end else begin\ - c_j_t = c_j;\ - vd_t = vd0;\ - w_t = w;\ - end - - - -module hic2_full (c,b,e,s,tnode); - -//Node definitions - -inout c,b,e,s,tnode; -electrical c,b,e,s,ci,ei,bp,bi,si; -electrical tnode; - -//Branch definitions -branch (b,bp) br_bbp_i; -branch (b,bp) br_bbp_v; -branch (ci,c) br_cic_i; -branch (ci,c) br_cic_v; -branch (ei,e) br_eie_i; -branch (ei,e) br_eie_v; -branch (bp,bi) br_bpbi_i; -branch (bp,bi) br_bpbi_v; -branch (si,s) br_sis_i; -branch (si,s) br_sis_v; -branch (bi,ei) br_biei; -branch (bi,ci) br_bici; -branch (ci,bi) br_cibi; -branch (ci,ei) br_ciei; -branch (bp,e) br_bpe; -branch (b,e) br_be; -branch (bp,ei) br_bpei; -branch (bp,ci) br_bpci; -branch (b,ci) br_bci; -branch (si,ci) br_sici; -branch (bp,si) br_bpsi; -branch (tnode ) br_sht; - -// -- ########################################################### -// -- ########### Parameters initialization ################ -// -- ########################################################### - - -//Transfer current -parameter real c10 = 2.0E-30 from [0:1] `ATTR(info="GICCR constant" unit="A^2s"); -parameter real qp0 = 2.0E-14 from (0:1] `ATTR(info="Zero-bias hole charge" unit="Coul"); -parameter real ich = 0.0 from [0:inf) `ATTR(info="High-current correction for 2D and 3D effects" unit="A"); //`0' signifies infinity -parameter real hfe = 1.0 from [0:inf] `ATTR(info="Emitter minority charge weighting factor in HBTs"); -parameter real hfc = 1.0 from [0:inf] `ATTR(info="Collector minority charge weighting factor in HBTs"); -parameter real hjei = 1.0 from [0:100] `ATTR(info="B-E depletion charge weighting factor in HBTs"); -parameter real hjci = 1.0 from [0:100] `ATTR(info="B-C depletion charge weighting factor in HBTs"); - -//Base-Emitter diode currents -parameter real ibeis = 1.0E-18 from [0:1] `ATTR(info="Internal B-E saturation current" unit="A"); -parameter real mbei = 1.0 from (0:10] `ATTR(info="Internal B-E current ideality factor"); -parameter real ireis = 0.0 from [0:1] `ATTR(info="Internal B-E recombination saturation current" unit="A"); -parameter real mrei = 2.0 from (0:10] `ATTR(info="Internal B-E recombination current ideality factor"); -parameter real ibeps = 0.0 from [0:1] `ATTR(info="Peripheral B-E saturation current" unit="A"); -parameter real mbep = 1.0 from (0:10] `ATTR(info="Peripheral B-E current ideality factor"); -parameter real ireps = 0.0 from [0:1] `ATTR(info="Peripheral B-E recombination saturation current" unit="A"); -parameter real mrep = 2.0 from (0:10] `ATTR(info="Peripheral B-E recombination current ideality factor"); -parameter real mcf = 1.0 from (0:10] `ATTR(info="Non-ideality factor for III-V HBTs"); - -//Transit time for excess recombination current at b-c barrier -parameter real tbhrec = 0.0 from [0:inf) `ATTR(info="Base current recombination time constant at B-C barrier for high forward injection" unit="s"); - -//Base-Collector diode currents -parameter real ibcis = 1.0E-16 from [0:1.0] `ATTR(info="Internal B-C saturation current" unit="A"); -parameter real mbci = 1.0 from (0:10] `ATTR(info="Internal B-C current ideality factor"); -parameter real ibcxs = 0.0 from [0:1.0] `ATTR(info="External B-C saturation current" unit="A"); -parameter real mbcx = 1.0 from (0:10] `ATTR(info="External B-C current ideality factor"); - -//Base-Emitter tunneling current -parameter real ibets = 0.0 from [0:1] `ATTR(info="B-E tunneling saturation current" unit="A"); -parameter real abet = 40 from [0:inf) `ATTR(info="Exponent factor for tunneling current"); -parameter integer tunode= 1 from [0:1] `ATTR(info="Specifies the base node connection for the tunneling current"); // =1 signifies perimeter node - -//Base-Collector avalanche current -parameter real favl = 0.0 from [0:inf) `ATTR(info="Avalanche current factor" unit="1/V"); -parameter real qavl = 0.0 from [0:inf) `ATTR(info="Exponent factor for avalanche current" unit="Coul"); -parameter real alfav = 0.0 `ATTR(info="Relative TC for FAVL" unit="1/K"); -parameter real alqav = 0.0 `ATTR(info="Relative TC for QAVL" unit="1/K"); - -//Series resistances -parameter real rbi0 = 0.0 from [0:inf) `ATTR(info="Zero bias internal base resistance" unit="Ohm"); -parameter real rbx = 0.0 from [0:inf) `ATTR(info="External base series resistance" unit="Ohm"); -parameter real fgeo = 0.6557 from [0:1] `ATTR(info="Factor for geometry dependence of emitter current crowding"); -parameter real fdqr0 = 0.0 from [0:1] `ATTR(info="Correction factor for modulation by B-E and B-C space charge layer"); -parameter real fcrbi = 0.0 from [0:1] `ATTR(info="Ratio of HF shunt to total internal capacitance (lateral NQS effect)"); -parameter real fqi = 1.0 from [0:1] `ATTR(info="Ration of internal to total minority charge"); -parameter real re = 0.0 from [0:inf) `ATTR(info="Emitter series resistance" unit="Ohm"); -parameter real rcx = 0.0 from [0:inf) `ATTR(info="External collector series resistance" unit="Ohm"); - -//Substrate transistor -parameter real itss = 0.0 from [0:1.0] `ATTR(info="Substrate transistor transfer saturation current" unit="A"); -parameter real msf = 1.0 from (0:10] `ATTR(info="Forward ideality factor of substrate transfer current"); -parameter real iscs = 0.0 from [0:1.0] `ATTR(info="C-S diode saturation current" unit="A"); -parameter real msc = 1.0 from (0:10] `ATTR(info="Ideality factor of C-S diode current"); -parameter real tsf = 0.0 from [0:inf) `ATTR(info="Transit time for forward operation of substrate transistor" unit="s"); - -//Intra-device substrate coupling -parameter real rsu = 0.0 from [0:inf) `ATTR(info="Substrate series resistance" unit="Ohm"); -parameter real csu = 0.0 from [0:inf) `ATTR(info="Substrate shunt capacitance" unit="F"); - -//Depletion Capacitances -parameter real cjei0 = 1.0E-20 from [0:inf) `ATTR(info="Internal B-E zero-bias depletion capacitance" unit="F"); -parameter real vdei = 0.9 from (0:10] `ATTR(info="Internal B-E built-in potential" unit="V"); -parameter real zei = 0.5 from (0:1] `ATTR(info="Internal B-E grading coefficient"); -parameter real ajei = 2.5 from [1:inf) `ATTR(info="Ratio of maximum to zero-bias value of internal B-E capacitance"); -parameter real cjep0 = 1.0E-20 from [0:inf) `ATTR(info="Peripheral B-E zero-bias depletion capacitance" unit="F"); -parameter real vdep = 0.9 from (0:10] `ATTR(info="Peripheral B-E built-in potential" unit="V"); -parameter real zep = 0.5 from (0:1] `ATTR(info="Peripheral B-E grading coefficient"); -parameter real ajep = 2.5 from [1:inf) `ATTR(info="Ratio of maximum to zero-bias value of peripheral B-E capacitance"); -parameter real cjci0 = 1.0E-20 from [0:inf) `ATTR(info="Internal B-C zero-bias depletion capacitance" unit="F"); -parameter real vdci = 0.7 from (0:10] `ATTR(info="Internal B-C built-in potential" unit="V"); -parameter real zci = 0.4 from (0:1] `ATTR(info="Internal B-C grading coefficient"); -parameter real vptci = 100 from (0:100] `ATTR(info="Internal B-C punch-through voltage" unit="V"); -parameter real cjcx0 = 1.0E-20 from [0:inf) `ATTR(info="External B-C zero-bias depletion capacitance" unit="F"); -parameter real vdcx = 0.7 from (0:10] `ATTR(info="External B-C built-in potential" unit="V"); -parameter real zcx = 0.4 from (0:1] `ATTR(info="External B-C grading coefficient"); -parameter real vptcx = 100 from (0:100] `ATTR(info="External B-C punch-through voltage" unit="V"); -parameter real fbcpar = 0.0 from [0:1] `ATTR(info="Partitioning factor of parasitic B-C cap"); -parameter real fbepar = 1.0 from [0:1] `ATTR(info="Partitioning factor of parasitic B-E cap"); -parameter real cjs0 = 0.0 from [0:inf) `ATTR(info="C-S zero-bias depletion capacitance" unit="F"); -parameter real vds = 0.6 from (0:10] `ATTR(info="C-S built-in potential" unit="V"); -parameter real zs = 0.5 from (0:1] `ATTR(info="C-S grading coefficient"); -parameter real vpts = 100 from (0:100] `ATTR(info="C-S punch-through voltage" unit="V"); - -//Diffusion Capacitances -parameter real t0 = 0.0 from [0:inf) `ATTR(info="Low current forward transit time at VBC=0V" unit="s"); -parameter real dt0h = 0.0 `ATTR(info="Time constant for base and B-C space charge layer width modulation" unit="s"); -parameter real tbvl = 0.0 from [0:inf) `ATTR(info="Time constant for modelling carrier jam at low VCE" unit="s"); -parameter real tef0 = 0.0 from [0:inf) `ATTR(info="Neutral emitter storage time" unit="s"); -parameter real gtfe = 1.0 from (0:10] `ATTR(info="Exponent factor for current dependence of neutral emitter storage time"); -parameter real thcs = 0.0 from [0:inf) `ATTR(info="Saturation time constant at high current densities" unit="s"); -parameter real ahc = 0.1 from (0:10] `ATTR(info="Smoothing factor for current dependence of base and collector transit time"); -parameter real fthc = 0.0 from [0:1] `ATTR(info="Partitioning factor for base and collector portion"); -parameter real rci0 = 150 from (0:inf) `ATTR(info="Internal collector resistance at low electric field" unit="Ohm"); -parameter real vlim = 0.5 from (0:10] `ATTR(info="Voltage separating ohmic and saturation velocity regime" unit="V"); -parameter real vces = 0.1 from [0:1] `ATTR(info="Internal C-E saturation voltage" unit="V"); -parameter real vpt = 0.0 from [0:inf] `ATTR(info="Collector punch-through voltage" unit="V"); // `0' signifies infinity -parameter real tr = 0.0 from [0:inf) `ATTR(info="Storage time for inverse operation" unit="s"); - -//Isolation Capacitances -parameter real cbepar = 0.0 from [0:inf) `ATTR(info="Total parasitic B-E capacitance" unit="F"); -parameter real cbcpar = 0.0 from [0:inf) `ATTR(info="Total parasitic B-C capacitance" unit="F"); - -//Non-quasi-static Effect -parameter real alqf = 0.0 from [0:1] `ATTR(info="Factor for additional delay time of minority charge"); -parameter real alit = 0.0 from [0:1] `ATTR(info="Factor for additional delay time of transfer current"); -parameter integer flnqs = 0 from [0:1] `ATTR(info="Flag for turning on and off of vertical NQS effect"); - -//Noise -parameter real kf = 0.0 from [0:inf) `ATTR(info="Flicker noise coefficient"); -parameter real af = 2.0 from (0:10] `ATTR(info="Flicker noise exponent factor"); -parameter integer cfbe = -1 from [-2:-1] `ATTR(info="Flag for determining where to tag the flicker noise source"); - -//Lateral Geometry Scaling (at high current densities) -parameter real latb = 0.0 from [0:inf) `ATTR(info="Scaling factor for collector minority charge in direction of emitter width"); -parameter real latl = 0.0 from [0:inf) `ATTR(info="Scaling factor for collector minority charge in direction of emitter length"); - -//Temperature dependence -parameter real vgb = 1.17 from (0:10] `ATTR(info="Bandgap voltage extrapolated to 0 K" unit="V"); -parameter real alt0 = 0.0 `ATTR(info="First order relative TC of parameter T0" unit="1/K"); -parameter real kt0 = 0.0 `ATTR(info="Second order relative TC of parameter T0"); -parameter real zetaci = 0.0 `ATTR(info="Temperature exponent for RCI0"); -parameter real alvs = 0.0 `ATTR(info="Relative TC of saturation drift velocity" unit="1/K"); -parameter real alces = 0.0 `ATTR(info="Relative TC of VCES" unit="1/K"); -parameter real zetarbi = 0.0 `ATTR(info="Temperature exponent of internal base resistance"); -parameter real zetarbx = 0.0 `ATTR(info="Temperature exponent of external base resistance"); -parameter real zetarcx = 0.0 `ATTR(info="Temperature exponent of external collector resistance"); -parameter real zetare = 0.0 `ATTR(info="Temperature exponent of emitter resistance"); -parameter real zetacx = 1.0 `ATTR(info="Temperature exponent of mobility in substrate transistor transit time"); -parameter real vge = 1.17 from (0:10] `ATTR(info="Effective emitter bandgap voltage" unit="V"); -parameter real vgc = 1.17 from (0:10] `ATTR(info="Effective collector bandgap voltage" unit="V"); -parameter real vgs = 1.17 from (0:10] `ATTR(info="Effective substrate bandgap voltage" unit="V"); -parameter real f1vg =-1.02377e-4 `ATTR(info="Coefficient K1 in T-dependent band-gap equation"); -parameter real f2vg = 4.3215e-4 `ATTR(info="Coefficient K2 in T-dependent band-gap equation"); -parameter real zetact = 3.0 `ATTR(info="Exponent coefficient in transfer current temperature dependence"); -parameter real zetabet = 3.5 `ATTR(info="Exponent coefficient in B-E junction current temperature dependence"); -parameter real alb = 0.0 `ATTR(info="Relative TC of forward current gain for V2.1 model" unit="1/K"); - -//Self-Heating -parameter integer flsh = 0 from [0:2] `ATTR(info="Flag for turning on and off self-heating effect"); -parameter real rth = 0.0 from [0:inf) `ATTR(info="Thermal resistance" unit="K/W"); -parameter real cth = 0.0 from [0:inf) `ATTR(info="Thermal capacitance" unit="J/W"); - -//Compatibility with V2.1 -parameter real flcomp = 0.0 from [0:inf) `ATTR(info="Flag for compatibility with v2.1 model (0=v2.1)"); - -//Circuit simulator specific parameters -parameter real tnom = 27.0 `ATTR(info="Temperature at which parameters are specified" unit="C"); -parameter real dt = 0.0 `ATTR(info="Temperature change w.r.t. chip temperature for particular transistor" unit="K"); - - -// -//======================== Transistor model formulation =================== -// - - //Declaration of variables - - //Temperature and drift - real VT,Tdev,qtt0,ln_qtt0,r_VgVT,V_gT,dT,k; - real ireis_t,ibeis_t,ibcxs_t,ibcis_t,iscs_t,cjci0_t; - real cjs0_t,rci0_t,vlim_t,vces_t,thcs_t,tef0_t,rbi0_t; - real rbx_t,rcx_t,re_t,t0_t,vdei_t,vdci_t,vpts_t,itss_t,tsf_t; - real c10_t,cjei0_t,qp0_t,vdcx_t,vptcx_t,cjcx01_t,cjcx02_t; - real qjcx0_t_i,qjcx0_t_ii,cratio_t; - real ibeps_t,ireps_t,cjep0_t; - real ajei_t,qavl_t,favl_t,ibets_t,abet_t,vptci_t,vdep_t,ajep_t,zetatef; - real k1,k2,dvg0,vge_t,vgb_t,vgbe_t,vds_t,vt0,Tnom,Tamb,a,avs; - real zetabci,zetabcxt,zetasct,vgbe0,mg,vgb_t0,vge_t0,vgbe_t0,vgbc0,vgsc0; - real cbcpar1,cbcpar2,cbepar2,cbepar1,Oich,Ovpt,Otbhrec; - - //Charges, capacitances and currents - real Qjci,Qjei,Qjep; - real it,ibei,irei,ibci,ibep,irep,ibh_rec; - real Qdei,Qdci,qrbi; - real ibet,iavl; - real ijbcx,ijsc,Qjs,HSUM,HSI_Tsu,Qdsu; - - //Base resistance and self-heating power - real rbi,pterm; - - //Variables for macro TMPHICJ - real vdj0,vdjt,vdt; - - //Model initialization - real k10,k20,C_1; - - //Model evaluation - real Cjci,Cjcit,cc,Cjei,Cjep; - real itf,itr,Tf,Tr,VT_f,i_0f,i_0r,a_bpt,Q_0,Q_p,Q_bpt; - real Orci0_t,b_q,Q_fC,T_fC,T_cT,I_Tf1,T_f0,Q_fT,T_fT,Q_bf; - real ICKa,d1; - real A,a_h,Q_pT,d_Q,d_Q0; - real Qf,Cdei,Qr,Cdci,Crbi; - real ick,vc,vceff,cjcx01,cjcx02,HSa,HSb; - integer l_it; - - //Variables for macros - real DIOY,le;//HICDIO - real FFT_fbS,FFa,FFx,FFs,FFw,FFw_2,FFd_QfB,FFd_TfB,FFT_pcS,FFQ_fC,FFT_fC,FFQ_cT,FFT_cT,FFd_TfE,FFd_QfE,FFa_w;//HICQFF - real FCz,FCw2,FCf1,FCf2,FCf3,FCf_ci,FCz_1,FCa1,FCa_ck,FCxl,FCxb;//HICQFC - real FCd_a,FCdaick_ditf,FCa,FCw,FCdw_daick,FCdfc_dw,FCdw_ditf,FCdfc_ditf,FCf_CT,FCdfCT_ditf,FCrt,FCln,FClnl,FClnb,FCda1_dw,FCdf1_dw,FCdf2_dw,FCdf3_dw,FCd_f,FCdfCT_dw;//HICQFC - real Dz_r,Dv_p,DV_f,DC_max,DC_c,Da,Dv_e,De,De_1,Dv_j1,Dv_r,De_2,Dv_j2,Dv_j4,DQ_j1,DQ_j2,DQ_j3,DCln1,DCln2,Dz1,Dzr1;//QJMOD - real DFV_f,DFv_e,DFv_j,DFb,DFQ_j,DFs_q,DFs_q2;//QJMODF - real z,a2,a3,r,x;//HICFCI - real zb,zl,lnzb,w,hicfcio,dhicfcio_dw; //HICFCT - - //Noise - real fourkt,twoq,flicker_Pwr; - - //end of variables - -analog begin - -begin : Model_initialization - - Tnom = tnom+`P_CELSIUS0; - Tamb = $temperature; - vt0 = `P_K*Tnom /`P_Q; - k10 = f1vg*Tnom*ln(Tnom); - k20 = f2vg*Tnom; - avs = alvs*Tnom; - vgb_t0 = vgb+k10+k20; - vge_t0 = vge+k10+k20; - vgbe_t0 = (vgb_t0+vge_t0)/2; - vgbe0 = (vgb+vge)/2; - vgbc0 = (vgb+vgc)/2; - vgsc0 = (vgs+vgc)/2; - mg = 3-`P_Q*f1vg/`P_K; - zetabci = mg+1-zetaci; - zetabcxt= mg+1-zetacx; - zetasct = mg-1.5; - - //Depletion capacitance splitting at b-c junction - //Capacitances at peripheral and external base node - C_1 = (1.0-fbcpar)*(cjcx0+cbcpar); - if (C_1 >= cbcpar) begin - cbcpar1 = cbcpar; - cbcpar2 = 0; - cjcx01 = C_1-cbcpar; - cjcx02 = cjcx0-cjcx01; - end else begin - cbcpar1 = C_1; - cbcpar2 = cbcpar-cbcpar1; - cjcx01 = 0.0; - cjcx02 = cjcx0; - end - - //Parasitic b-e capacitance partitioning: No temperature dependence - cbepar2 = fbepar*cbepar; - cbepar1 = cbepar-cbepar2; - - //Avoid devide-by-zero and define infinity other way - //High current correction for 2D and 3D effects - if (ich != 0.0) begin - Oich = 1.0/ich; - end else begin - Oich = 0.0; - end - - //Base current recombination time constant at b-c barrier - if (tbhrec != 0.0) begin - Otbhrec = 1.0/tbhrec; - end else begin - Otbhrec = 0.0; - end - - //Collector punch-through voltage - if(vpt != 0.0) begin - Ovpt = 1.0/vpt; - end else begin - Ovpt = 0.0; - end - - // Temperature and resulting parameter drift - if (flsh==0 || rth < `MIN_R) begin : Thermal_updat_without_self_heating - Tdev = Tamb+dt; - if(Tdev < `TMIN + 273.15) begin - Tdev = `TMIN + 273.15; - end else begin - if (Tdev > `TMAX + 273.15) begin - Tdev = `TMAX + 273.15; - end - end - VT = `P_K*Tdev /`P_Q; - dT = Tdev-Tnom; - qtt0 = Tdev/Tnom; - ln_qtt0 = ln(qtt0); - k1 = f1vg*Tdev*ln(Tdev); - k2 = f2vg*Tdev; - vgb_t = vgb+k1+k2; - vge_t = vge+k1+k2; - vgbe_t = (vgb_t+vge_t)/2; - - //Internal b-e junction capacitance - `TMPHICJ(cjei0,vdei,zei,ajei,1,vgbe0,cjei0_t,vdei_t,ajei_t) - - if (flcomp == 0.0 || flcomp == 2.1) begin - V_gT = 3.0*VT*ln_qtt0 + vgb*(qtt0-1.0); - r_VgVT = V_gT/VT; - //Internal b-e diode saturation currents - a = mcf*r_VgVT/mbei - alb*dT; - ibeis_t = ibeis*exp(a); - a = mcf*r_VgVT/mrei - alb*dT; - ireis_t = ireis*exp(a); - a = mcf*r_VgVT/mbep - alb*dT; - //Peripheral b-e diode saturation currents - ibeps_t = ibeps*exp(a); - a = mcf*r_VgVT/mrep - alb*dT; - ireps_t = ireps*exp(a); - //Internal b-c diode saturation current - a = r_VgVT/mbci; - ibcis_t = ibcis*exp(a); - //External b-c diode saturation currents - a = r_VgVT/mbcx; - ibcxs_t = ibcxs*exp(a); - //Saturation transfer current for substrate transistor - a = r_VgVT/msf; - itss_t = itss*exp(a); - //Saturation current for c-s diode - a = r_VgVT/msc; - iscs_t = iscs*exp(a); - //Zero bias hole charge - a = vdei_t/vdei; - qp0_t = qp0*(1.0+0.5*zei*(1.0-a)); - //Voltage separating ohmic and saturation velocity regime - a = vlim*(1.0-alvs*dT)*exp(zetaci*ln_qtt0); - k = (a-VT)/VT; - if (k < `LN_EXP_LIMIT) begin - vlim_t = VT + VT*ln(1.0+exp(k)); - end else begin - vlim_t = a; - end - //Neutral emitter storage time - a = 1.0+alb*dT; - k = 0.5*(a+sqrt(a*a+0.01)); - tef0_t = tef0*qtt0/k; - end else begin - //Internal b-e diode saturation currents - ibeis_t = ibeis*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); - ireis_t = ireis*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1)); - //Peripheral b-e diode saturation currents - ibeps_t = ibeps*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); - ireps_t = ireps*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1)); - //Internal b-c diode saturation currents - ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); - //External b-c diode saturation currents - ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1)); - //Saturation transfer current for substrate transistor - itss_t = itss*exp(zetasct*ln_qtt0+vgc/VT*(qtt0-1)); - //Saturation current for c-s diode - iscs_t = iscs*exp(zetasct*ln_qtt0+vgs/VT*(qtt0-1)); - //Zero bias hole charge - a = exp(zei*ln(vdei_t/vdei)); - qp0_t = qp0*(2.0-a); - //Voltage separating ohmic and saturation velocity regime - vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); - //Neutral emitter storage time - zetatef = zetabet-zetact-0.5; - dvg0 = vgb-vge; - tef0_t = tef0*exp(zetatef*ln_qtt0-dvg0/VT*(qtt0-1)); - end - - //GICCR prefactor - c10_t = c10*exp(zetact*ln_qtt0+vgb/VT*(qtt0-1)); - - // Low-field internal collector resistance - rci0_t = rci0*exp(zetaci*ln_qtt0); - - //Voltage separating ohmic and saturation velocity regime - //vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); - - //Internal c-e saturation voltage - vces_t = vces*(1+alces*dT); - - - //Internal b-c diode saturation current - //ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); - - //Internal b-c junction capacitance - `TMPHICJ(cjci0,vdci,zci,vptci,0,vgbc0,cjci0_t,vdci_t,vptci_t) - - //Low-current forward transit time - t0_t = t0*(1+alt0*dT+kt0*dT*dT); - - //Saturation time constant at high current densities - thcs_t = thcs*exp((zetaci-1)*ln_qtt0); - - - //Avalanche caurrent factors - favl_t = favl*exp(alfav*dT); - qavl_t = qavl*exp(alqav*dT); - - //Zero bias internal base resistance - rbi0_t = rbi0*exp(zetarbi*ln_qtt0); - - - //Peripheral b-e junction capacitance - `TMPHICJ(cjep0,vdep,zep,ajep,1,vgbe0,cjep0_t,vdep_t,ajep_t) - - //Tunneling current factors - if (V(br_bpei) < 0.0 || V(br_biei) < 0.0) begin : HICTUN_T - real a_eg,ab,aa; - ab = 1.0; - aa = 1.0; - a_eg=vgbe_t0/vgbe_t; - if(tunode==1 && cjep0 > 0.0 && vdep >0.0) begin - ab = (cjep0_t/cjep0)*sqrt(a_eg)*vdep_t*vdep_t/(vdep*vdep); - aa = (vdep/vdep_t)*(cjep0/cjep0_t)*pow(a_eg,-1.5); - end else if (tunode==0 && cjei0 > 0.0 && vdei >0.0) begin - ab = (cjei0_t/cjei0)*sqrt(a_eg)*vdei_t*vdei_t/(vdei*vdei); - aa = (vdei/vdei_t)*(cjei0/cjei0_t)*pow(a_eg,-1.5); - end - ibets_t = ibets*ab; - abet_t = abet*aa; - end - - - //Temperature mapping for tunneling current is done inside HICTUN - - `TMPHICJ(1.0,vdcx,zcx,vptcx,0,vgbc0,cratio_t,vdcx_t,vptcx_t) - cjcx01_t=cratio_t*cjcx01; - cjcx02_t=cratio_t*cjcx02; - - - //External b-c diode saturation currents - //ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1)); - - - //Constant external series resistances - rcx_t = rcx*exp(zetarcx*ln_qtt0); - rbx_t = rbx*exp(zetarbx*ln_qtt0); - re_t = re*exp(zetare*ln_qtt0); - - //Forward transit time in substrate transistor - tsf_t = tsf*exp((zetacx-1.0)*ln_qtt0); - - //Capacitance for c-s junction - `TMPHICJ(cjs0,vds,zs,vpts,0,vgsc0,cjs0_t,vds_t,vpts_t) - - end // of Thermal_update_without_self_heating - -end //of Model_initialization - - if (flsh!=0 && rth >= `MIN_R) begin : Thermal_update_with_self_heating - Tdev = Tamb+dt+V(br_sht); - // Limit temperature to avoid FPEs in equations - if(Tdev < `TMIN + 273.15) begin - Tdev = `TMIN + 273.15; - end else begin - if (Tdev > `TMAX + 273.15) begin - Tdev = `TMAX + 273.15; - end - end - VT = `P_K*Tdev /`P_Q; - dT = Tdev-Tnom; - qtt0 = Tdev/Tnom; - ln_qtt0 = ln(qtt0); - k1 = f1vg*Tdev*ln(Tdev); - k2 = f2vg*Tdev; - vgb_t = vgb+k1+k2; - vge_t = vge+k1+k2; - vgbe_t = (vgb_t+vge_t)/2; - - //Internal b-e junction capacitance - `TMPHICJ(cjei0,vdei,zei,ajei,1,vgbe0,cjei0_t,vdei_t,ajei_t) - - if (flcomp == 0.0 || flcomp == 2.1) begin - V_gT = 3.0*VT*ln_qtt0 + vgb*(qtt0-1.0); - r_VgVT = V_gT/VT; - //Internal b-e diode saturation currents - a = mcf*r_VgVT/mbei - alb*dT; - ibeis_t = ibeis*exp(a); - a = mcf*r_VgVT/mrei - alb*dT; - ireis_t = ireis*exp(a); - a = mcf*r_VgVT/mbep - alb*dT; - //Peripheral b-e diode saturation currents - ibeps_t = ibeps*exp(a); - a = mcf*r_VgVT/mrep - alb*dT; - ireps_t = ireps*exp(a); - //Internal b-c diode saturation current - a = r_VgVT/mbci; - ibcis_t = ibcis*exp(a); - //External b-c diode saturation currents - a = r_VgVT/mbcx; - ibcxs_t = ibcxs*exp(a); - //Saturation transfer current for substrate transistor - a = r_VgVT/msf; - itss_t = itss*exp(a); - //Saturation current for c-s diode - a = r_VgVT/msc; - iscs_t = iscs*exp(a); - //Zero bias hole charge - a = vdei_t/vdei; - qp0_t = qp0*(1.0+0.5*zei*(1.0-a)); - //Voltage separating ohmic and saturation velocity regime - a = vlim*(1.0-alvs*dT)*exp(zetaci*ln_qtt0); - k = (a-VT)/VT; - if (k < `LN_EXP_LIMIT) begin - vlim_t = VT + VT*ln(1.0+exp(k)); - end else begin - vlim_t = a; - end - //Neutral emitter storage time - a = 1.0+alb*dT; - k = 0.5*(a+sqrt(a*a+0.01)); - tef0_t = tef0*qtt0/k; - end else begin - //Internal b-e diode saturation currents - ibeis_t = ibeis*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); - ireis_t = ireis*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1)); - //Peripheral b-e diode saturation currents - ibeps_t = ibeps*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); - ireps_t = ireps*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1)); - //Internal b-c diode saturation currents - ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); - //External b-c diode saturation currents - ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1)); - //Saturation transfer current for substrate transistor - itss_t = itss*exp(zetasct*ln_qtt0+vgc/VT*(qtt0-1)); - //Saturation current for c-s diode - iscs_t = iscs*exp(zetasct*ln_qtt0+vgs/VT*(qtt0-1)); - //Zero bias hole charge - a = exp(zei*ln(vdei_t/vdei)); - qp0_t = qp0*(2.0-a); - //Voltage separating ohmic and saturation velocity regime - vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); - //Neutral emitter storage time - zetatef = zetabet-zetact-0.5; - dvg0 = vgb-vge; - tef0_t = tef0*exp(zetatef*ln_qtt0-dvg0/VT*(qtt0-1)); - end - - //GICCR prefactor - c10_t = c10*exp(zetact*ln_qtt0+vgb/VT*(qtt0-1)); - - // Low-field internal collector resistance - rci0_t = rci0*exp(zetaci*ln_qtt0); - - //Voltage separating ohmic and saturation velocity regime - //vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); - - //Internal c-e saturation voltage - vces_t = vces*(1+alces*dT); - - - //Internal b-c diode saturation current - //ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); - - //Internal b-c junction capacitance - `TMPHICJ(cjci0,vdci,zci,vptci,0,vgbc0,cjci0_t,vdci_t,vptci_t) - - //Low-current forward transit time - t0_t = t0*(1+alt0*dT+kt0*dT*dT); - - //Saturation time constant at high current densities - thcs_t = thcs*exp((zetaci-1)*ln_qtt0); - - - //Avalanche caurrent factors - favl_t = favl*exp(alfav*dT); - qavl_t = qavl*exp(alqav*dT); - - //Zero bias internal base resistance - rbi0_t = rbi0*exp(zetarbi*ln_qtt0); - - - //Peripheral b-e junction capacitance - `TMPHICJ(cjep0,vdep,zep,ajep,1,vgbe0,cjep0_t,vdep_t,ajep_t) - - //Tunneling current factors - if (V(br_bpei) < 0.0 || V(br_biei) < 0.0) begin : HICTUN_T - real a_eg,ab,aa; - ab = 1.0; - aa = 1.0; - a_eg=vgbe_t0/vgbe_t; - if(tunode==1 && cjep0 > 0.0 && vdep >0.0) begin - ab = (cjep0_t/cjep0)*sqrt(a_eg)*vdep_t*vdep_t/(vdep*vdep); - aa = (vdep/vdep_t)*(cjep0/cjep0_t)*pow(a_eg,-1.5); - end else if (tunode==0 && cjei0 > 0.0 && vdei >0.0) begin - ab = (cjei0_t/cjei0)*sqrt(a_eg)*vdei_t*vdei_t/(vdei*vdei); - aa = (vdei/vdei_t)*(cjei0/cjei0_t)*pow(a_eg,-1.5); - end - ibets_t = ibets*ab; - abet_t = abet*aa; - end - - - //Temperature mapping for tunneling current is done inside HICTUN - - `TMPHICJ(1.0,vdcx,zcx,vptcx,0,vgbc0,cratio_t,vdcx_t,vptcx_t) - cjcx01_t=cratio_t*cjcx01; - cjcx02_t=cratio_t*cjcx02; - - - //External b-c diode saturation currents - //ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1)); - - - //Constant external series resistances - rcx_t = rcx*exp(zetarcx*ln_qtt0); - rbx_t = rbx*exp(zetarbx*ln_qtt0); - re_t = re*exp(zetare*ln_qtt0); - - //Forward transit time in substrate transistor - tsf_t = tsf*exp((zetacx-1.0)*ln_qtt0); - - //Capacitance for c-s junction - `TMPHICJ(cjs0,vds,zs,vpts,0,vgsc0,cjs0_t,vds_t,vpts_t) - - - end //of Thermal_update_with_self_heating - - -begin : Model_evaluation - - //Intrinsic transistor - //Internal base currents across b-e junction - `HICDIO(ibeis,ibeis_t,mbei,V(br_biei),ibei) - `HICDIO(ireis,ireis_t,mrei,V(br_biei),irei) - - //HICCR: begin - - //Inverse of low-field internal collector resistance: needed in HICICK - Orci0_t = 1.0/rci0_t; - - //Initialization - //Transfer current, minority charges and transit times - - Tr = tr; - VT_f = mcf*VT; - i_0f = c10_t * limexp(V(br_biei)/VT_f); - i_0r = c10_t * limexp(V(br_bici)/VT); - - //Internal b-e and b-c junction capacitances and charges - `QJMODF(cjei0_t,vdei_t,zei,ajei_t,V(br_biei),Qjei) - Cjei = ddx(Qjei,V(bi)); - `HICJQ(cjci0_t,vdci_t,zci,vptci_t,V(br_bici),Qjci) - Cjci = ddx(Qjci,V(bi)); - - //Hole charge at low bias - a_bpt = 0.05; - Q_0 = qp0_t + hjei*Qjei + hjci*Qjci; - Q_bpt = a_bpt*qp0_t; - b_q = Q_0/Q_bpt-1; - Q_0 = Q_bpt*(1+(b_q +sqrt(b_q*b_q+1.921812))/2); - - //Transit time calculation at low current density - if(cjci0_t > 0.0) begin : CJMODF - real cV_f,cv_e,cs_q,cs_q2,cv_j,cdvj_dv; - cV_f = vdci_t*(1.0-exp(-ln(2.4)/zci)); - cv_e = (cV_f-V(br_bici))/VT; - cs_q = sqrt(cv_e*cv_e+1.921812); - cs_q2 = (cv_e+cs_q)*0.5; - cv_j = cV_f-VT*cs_q2; - cdvj_dv = cs_q2/cs_q; - Cjcit = cjci0_t*exp(-zci*ln(1.0-cv_j/vdci_t))*cdvj_dv+2.4*cjci0_t*(1.0-cdvj_dv); - end else begin - Cjcit = 0.0; - end - if(Cjcit > 0.0) begin - cc = cjci0_t/Cjcit; - end else begin - cc = 1.0; - end - T_f0 = t0_t+dt0h*(cc-1.0)+tbvl*(1/cc-1.0); - - //Effective collector voltage - vc = V(br_ciei)-vces_t; - - //Critical current for onset of high-current effects - begin : HICICK - a = vc/VT; - d1 = a-1; - vceff = (1.0+((d1+sqrt(d1*d1+1.921812))/2))*VT; - a = vceff/vlim_t; - ick = vceff*Orci0_t/sqrt(1.0+a*a); - ICKa = (vceff-vlim_t)*Ovpt; - ick = ick*(1.0+0.5*(ICKa+sqrt(ICKa*ICKa+1.0e-3))); - end - - //Initial formulation of forward and reverse component of transfer current - Q_p = Q_0; - if (T_f0 > 0.0 || Tr > 0.0) begin - A = 0.5*Q_0; - Q_p = A+sqrt(A*A+T_f0*i_0f+Tr*i_0r); - end - I_Tf1 =i_0f/Q_p; - a_h = Oich*I_Tf1; - itf = I_Tf1*(1.0+a_h); - itr = i_0r/Q_p; - - //Initial formulation of forward transit time, diffusion, GICCR and excess b-c charge - Q_bf = 0.0; - Tf = T_f0; - Qf = T_f0*itf; - `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf) - - //Initial formulation of reverse diffusion charge - Qr = Tr*itr; - - //Preparation for iteration to get total hole charge and related variables - l_it = 0; - if(Qf > `RTOLC*Q_p || a_h > `RTOLC) begin - //Iteration for Q_pT is required for improved initial solution - Qf = sqrt(T_f0*itf*Q_fT); - Q_pT = Q_0+Qf+Qr; - d_Q = Q_pT; - while (abs(d_Q) >= `RTOLC*abs(Q_pT) && l_it <= `l_itmax) begin - d_Q0 = d_Q; - I_Tf1 = i_0f/Q_pT; - a_h = Oich*I_Tf1; - itf = I_Tf1*(1.0+a_h); - itr = i_0r/Q_pT; - Tf = T_f0; - Qf = T_f0*itf; - `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf) - Qr = Tr*itr; - if(Oich == 0.0) begin - a = 1.0+(T_fT*itf+Qr)/Q_pT; - end else begin - a = 1.0+(T_fT*I_Tf1*(1.0+2.0*a_h)+Qr)/Q_pT; - end - d_Q = -(Q_pT-(Q_0+Q_fT+Qr))/a; - //Limit maximum change of Q_pT - a = abs(0.3*Q_pT); - if(abs(d_Q) > a) begin - if (d_Q>=0) begin - d_Q = a; - end else begin - d_Q = -a; - end - end - Q_pT = Q_pT+d_Q; - l_it = l_it+1; - end //while - - I_Tf1 = i_0f/Q_pT; - a_h = Oich*I_Tf1; - itf = I_Tf1*(1.0+a_h); - itr = i_0r/Q_pT; - - //Final transit times, charges and transport current components - Tf = T_f0; - Qf = T_f0*itf; - `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf) - Qr = Tr*itr; - - end //if - - //Currently no NQS effect implemented for Qf and itf - - it = itf-itr; - - /* - // NQS Effect:Please incert here the hand-coded Weil's approach after getting - // C-code from the model compilers. - */ - - //Diffusion charges for further use - Qdei = Qf; - Qdci = Qr; - - - //High-frequency emitter current crowding (lateral NQS) - Cdei = ddx(Qdei,V(bi)); - Cdci = ddx(Qdci,V(bi)); - Crbi = fcrbi*(Cjei+Cjci+Cdei+Cdci); - qrbi = Crbi*V(br_bpbi_v); - - //HICCR: end - - //Internal base current across b-c junction - `HICDIO(ibcis,ibcis_t,mbci,V(br_bici),ibci) - - //Avalanche current - if((V(br_bici) < 0.0) && (favl_t > 0.0) && (cjci0_t > 0.0)) begin : HICAVL - real v_bord,v_q,U0,av,avl,S_avl; - v_bord = vdci_t-V(br_bici); - v_q = qavl_t/Cjci; - U0 = qavl_t/cjci0_t; - if(v_bord > U0) begin - av = favl_t*exp(-v_q/U0); - avl = av*(U0+(1.0+v_q/U0)*(v_bord-U0)); - end else begin - avl = favl_t*v_bord*exp(-v_q/v_bord); - end - iavl = itf*avl; - end else begin - iavl = 0.0; - end - - //Excess base current from recombination at the b-c barrier - ibh_rec = Q_bf*Otbhrec; - - //Internal base resistance - if(rbi0_t > 0.0) begin : HICRBI - real Qz_nom,f_QR,f_p,ETA,Qz0,fQz; - // Consideration of conductivity modulation - // To avoid convergence problem hyperbolic smoothing used - f_QR = (1+fdqr0)*qp0_t; - Qz0 = Qjei+Qjci+Qf; - Qz_nom = 1+Qz0/f_QR; - fQz = 0.5*(Qz_nom+sqrt(Qz_nom*Qz_nom+0.01)); - rbi = rbi0_t/fQz; - // Consideration of emitter current crowding - if( ibei > 0.0) begin - ETA = rbi*ibei*fgeo/VT; - if(ETA < 1.0e-6) begin - rbi = rbi*(1.0-0.5*ETA); - end else begin - rbi = rbi*ln(1.0+ETA)/ETA; - end - end - // Consideration of peripheral charge - if(Qf > 0.0) begin - rbi = rbi*(Qjei+Qf*fqi)/(Qjei+Qf); - end - end else begin - rbi = 0.0; - end - - //Base currents across peripheral b-e junction - `HICDIO(ibeps,ibeps_t,mbep,V(br_bpei),ibep) - `HICDIO(ireps,ireps_t,mrep,V(br_bpei),irep) - - //Peripheral b-e junction capacitance and charge - //Following module may be replaced by calling QJMODF - //if ddx() produces correct results for Cjep using that macro. - if (cjep0_t >0.0) begin : QJEP - real V_f,v_e,s_q,s_q2,v_j,Q_j; - V_f = vdep_t*(1.0-exp(-ln(ajep_t)/zep)); - v_e = (V_f-V(br_bpei))/VT; - s_q = sqrt(v_e*v_e+1.921812); - s_q2 = (v_e+s_q)*0.5; - v_j = V_f-VT*s_q2; - Q_j = cjep0_t*vdep_t*(1.0-exp(ln(1.0-v_j/vdep_t)*(1.0-zep)))/(1.0-zep); - Qjep = Q_j+ajep_t*cjep0_t*(V(br_bpei)-v_j); - end else begin - Qjep = 0.0; - end - - //`QJMODF(cjep0_t,vdep_t,zep,ajep_t,V(br_bpei),Qjep) - Cjep = ddx(Qjep,V(bp)); - - - //Tunelling current - if (V(br_bpei) <0.0 || V(br_biei) < 0.0) begin : HICTUN - real pocce,czz; - if(tunode==1 && cjep0_t > 0.0 && vdep_t >0.0) begin - pocce = exp((1-1/zep)*ln(Cjep/cjep0_t)); - czz = -(V(br_bpei)/vdep_t)*ibets_t*pocce; - ibet = czz*exp(-abet_t/pocce); - end else if (tunode==0 && cjei0_t > 0.0 && vdei_t >0.0) begin - pocce = exp((1-1/zei)*ln(Cjei/cjei0_t)); - czz = -(V(br_biei)/vdei_t)*ibets_t*pocce; - ibet = czz*exp(-abet_t/pocce); - end else begin - ibet = 0.0; - end - end else begin - ibet = 0.0; - end - - - //Depletion capacitance and charge at peripheral b-c junction (bp,ci) - `HICJQ(cjcx02_t,vdcx_t,zcx,vptcx_t,V(br_bpci),qjcx0_t_ii) - - //Base currents across peripheral b-c junction (bp,ci) - `HICDIO(ibcxs,ibcxs_t,mbcx,V(br_bpci),ijbcx) - - //Depletion capacitance and charge at external b-c junction (b,ci) - `HICJQ(cjcx01_t,vdcx_t,zcx,vptcx_t,V(br_bci),qjcx0_t_i) - - //Depletion substrate capacitance and charge at s-c junction (si,ci) - `HICJQ(cjs0_t,vds_t,zs,vpts_t,V(br_sici),Qjs) - - //Parasitic substrate transistor transfer current and diffusion charge - if(itss > 0.0) begin : Sub_Transfer - HSUM = msf*VT; - HSa = limexp(V(br_bpci)/HSUM); - HSb = limexp(V(br_sici)/HSUM); - HSI_Tsu = itss_t*(HSa-HSb); - if(tsf > 0.0) begin - Qdsu = tsf_t*itss_t*HSa; - end else begin - Qdsu = 0.0; - end - end else begin - HSI_Tsu = 0.0; - Qdsu = 0.0; - end - - //Diode current for s-c junction (si,ci) - `HICDIO(iscs,iscs_t,msc,V(br_sici),ijsc) - - //Self-heating calculation - if (flsh == 1 && rth >= `MIN_R) begin - pterm = V(br_ciei)*it + (vdci_t-V(br_bici))*iavl; - end else if (flsh == 2 && rth >= `MIN_R) begin - pterm = V(br_ciei)*it + (vdci_t-V(br_bici))*iavl + ibei*V(br_biei) + ibci*V(br_bici) + ibep*V(br_bpei) + ijbcx*V(br_bpci) + ijsc*V(br_sici); - if (rbi >= `MIN_R) begin - pterm = pterm + V(br_bpbi_i)*V(br_bpbi_i)/rbi; - end - if (re_t >= `MIN_R) begin - pterm = pterm + V(br_eie_i)*V(br_eie_i)/re_t; - end - if (rcx_t >= `MIN_R) begin - pterm = pterm + V(br_cic_i)*V(br_cic_i)/rcx_t; - end - if (rbx_t >= `MIN_R) begin - pterm = pterm + V(br_bbp_i)*V(br_bbp_i)/rbx_t; - end - end - -end //of Model_evaluation - -begin : Load_sources - - I(br_biei) <+ `Gmin*V(br_biei); - I(br_bici) <+ `Gmin*V(br_bici); - - I(br_bci) <+ ddt(qjcx0_t_i); - I(br_bci) <+ ddt(cbcpar1*V(br_bci)); - I(br_bpci) <+ ddt(cbcpar2*V(br_bpci)); - if (rbx >= `MIN_R) begin - I(br_bbp_i) <+ V(br_bbp_i)/rbx_t; - end else begin - I(br_bbp_i) <+ V(br_bbp_i)/1e-6; - //V(br_bbp_v) <+ 0.0; - end - if(rbi0 >= `MIN_R) begin - I(br_bpbi_i) <+ V(br_bpbi_i)/rbi; - I(br_bpbi_i) <+ ddt(qrbi); - end else begin - I(br_bpbi_i) <+ V(br_bpbi_i)/1e-6; - //V(br_bpbi_v) <+ 0.0; - end - if (tunode==1.0) begin - I(br_bpei) <+ -ibet; - end else begin - I(br_biei) <+ -ibet; - end - I(br_bpei) <+ ibep; - I(br_bpei) <+ irep; - I(br_bpei) <+ ddt(Qjep); - I(br_biei) <+ ibei; - I(br_biei) <+ irei; - I(br_biei) <+ ibh_rec; - I(br_biei) <+ ddt(Qdei+Qjei); - I(br_bpsi) <+ HSI_Tsu; - I(br_bpci) <+ ijbcx; - I(br_bpci) <+ ddt(qjcx0_t_ii+Qdsu); - I(br_be) <+ ddt(cbepar1*V(br_be)); - I(br_bpe) <+ ddt(cbepar2*V(br_bpe)); - I(br_bici) <+ ibci-iavl; - I(br_bici) <+ ddt(Qdci+Qjci); - I(br_sici) <+ ijsc; - I(br_sici) <+ ddt(Qjs); - I(br_ciei) <+ it; - if (rcx >= `MIN_R) begin - I(br_cic_i) <+ V(br_cic_i)/rcx_t; - end else begin - I(br_cic_i) <+ V(br_cic_i)/1e-6; - //V(br_cic_v) <+ 0.0; - end - if (re >= `MIN_R) begin - I(br_eie_i) <+ V(br_eie_i)/re_t; - end else begin - I(br_eie_i) <+ V(br_eie_i)/1e-6; - //V(br_eie_v) <+ 0.0; - end - if(rsu >= `MIN_R) begin - I(br_sis_i) <+ V(br_sis_i)/rsu; - I(br_sis_i) <+ ddt(csu*V(br_sis_i)); - end else begin - I(br_sis_i) <+ V(br_sis_i)/1e-6; - //V(br_sis_v) <+ 0.0; - end - - // Following code is an intermediate solution (if branch contribution is not supported): - // ****************************************** - if(flsh == 0 || rth < `MIN_R) begin - I(br_sht) <+ V(br_sht)/`MIN_R; - end else begin - I(br_sht) <+ V(br_sht)/rth-pterm; - I(br_sht) <+ ddt(cth*V(br_sht)); - end - - // ****************************************** - - // For simulators having no problem with V(br_sht) <+ 0.0 - // with external thermal node, follwing code may be used. - // Note that external thermal node should remain accessible - // even without self-heating. - // ******************************************** - // if(flsh == 0 || rth < `MIN_R) begin - // V(br_sht) <+ 0.0; - // end else begin - // I(br_sht) <+ V(br_sht)/rth-pterm; - // I(br_sht) <+ ddt(cth*V(br_sht)); - // end - // ******************************************** - -end //of Load_sources - - -begin : Noise_sources - - //Thermal noise - fourkt = 4.0 * `P_K * Tdev; - if(rbx >= `MIN_R) begin - I(br_bbp_i) <+ white_noise(fourkt/rbx_t, "thermal"); - end - if(rbi0 >= `MIN_R) begin - I(br_bpbi_i) <+ white_noise(fourkt/rbi, "thermal"); - end - if(rcx >= `MIN_R) begin - I(br_cic_i) <+ white_noise(fourkt/rcx_t, "thermal"); - end - if(re >= `MIN_R) begin - I(br_eie_i) <+ white_noise(fourkt/re_t, "thermal"); - end - if(rsu >= `MIN_R) begin - I(br_sis_i) <+ white_noise(fourkt/rsu, "thermal"); - end - - //Flicker noise : Fully correlated between the perimeter and internal base-node - flicker_Pwr = kf*pow((ibei+ibep),af); - if (cfbe == -1) begin - I(br_biei) <+ flicker_noise(flicker_Pwr,1.0); - end else begin - I(br_bpei) <+ flicker_noise(flicker_Pwr,1.0); - end - - //Shot noise - twoq = 2.0 * `P_Q; - I(br_ciei) <+ white_noise(twoq*it, "shot"); - I(br_cibi) <+ white_noise(twoq*iavl, "shot"); - I(br_biei) <+ white_noise(twoq*ibei, "shot"); - I(br_bici) <+ white_noise(twoq*abs(ibci), "shot"); - I(br_bpei) <+ white_noise(twoq*ibep, "shot"); - I(br_bpci) <+ white_noise(twoq*abs(ijbcx), "shot"); - I(br_sici) <+ white_noise(twoq*abs(ijsc), "shot"); - - //Correlated noise not yet implemented - -end //of Noise_sources - -end //analog -endmodule diff --git a/qucs-core/src/components/verilog/hicumL2V2p23.va b/qucs-core/src/components/verilog/hicumL2V2p23.va deleted file mode 100644 index de35ade49c..0000000000 --- a/qucs-core/src/components/verilog/hicumL2V2p23.va +++ /dev/null @@ -1,1662 +0,0 @@ -//HICUM Level_2 Version_2.23: A Verilog-A Description - -//**************New Implementations***************** - -//****************************************************************************** -//This code contains a Verilog-A implementation of Vertical Non-Quasi-Static(NQS) -//Effects using adjunct gyrator networks. To turn on this effect please set FLNQS=1. -//Although Vertical NQS effects have been taken into account in HICUM from the very -//beginning (see original FTN code and built-in v2.1 HICUM model inside most of the -//existing circuit simulators) their implementation has been based on Weil's approach. -//However, using Verilog, it is presently not possible to implement Weil's approach, -//since there does not exist access to previous time-steps of the simulatior. -//The nearly available Verilog-A solution reproduces the results of previous -//HICUM versions (cf. documentation). -//****************************************************************************** - -//****************************************************************************** -// Implementation of noise correlation -// Please turn-off (by front slash //) the noise correlation code section for simulation with Spectre -//****************************************************************************** - -// ***************Bug fix and optimization************* -// 04/08: New range has been defined for FDQR0. -// 11/07: Bugs have been fixed in macro HICFCI and HICQFC -// 10/06: in @(initial_model), external if-block for HICTUN_T removed -// 11/06: within HICQFC, minor changes made for LATB<=0.01; -// also HICFCI and HICFCT are changed accordingly -// to ensure correct derivatives -// Upper limit of FGEO parameter was changed to infinity. -// 12/06: expressions for Cdei and Cdci are corrected not to include -// Ccdei and Cbdci respectively (used in Crbi expression). - -// 01/06: FCdf1_dw assigned expression (missing in v2.21) -// FCa and FCa1 are found to have same expression: FCa is omitted in those cases -// FCa1 written instead of FCa in the expression for FCf_ci -// Thermal node "tnode" set as external -// zetasct = mg+1-2.5 changed to zetasct = mg-1.5; -// Code optimization: Temperature dependent parts are moduled in two separate blocks: -// within @(initial_model) when self-heating is OFF -// outside @(initial_model) when self-heating is ON -// 03/06 : Further fix -// vlim_t,ibcis_t,ibcxs_t,itss_t,iscs_t considered in compatibility block -// ddt() operators are separated in contribution expressions. -// FLCOMP parameter is given different values -// 05/06: -// all if-else blocks marked with begin-end -// unused variables deleted -// all series resistors and RTH are allowed to have a minimum value MIN_R -// only tunelling current source contribution within if-then-else -// 06/06: HICRBI deleted and instead the code changed (hyperbolic smoothing in -// conductivity modulation part) and put in relevant portion of the code. -// 07/06: ddx() operator used to find out capacitances from charges: -// QJMODF,QJMOD,HICJQ changed accordingly -// Lateral NQS effect modified with ddx() operator. -// HICFCT included for downward compatibility reason. -// Few macros are taken inside the code: HICICK, HICAVL, HICTUN (more optimized), -// internal base resistance (Qjci included under conductivity modulation, hyperbolic smoothing used) -// Gmin added at (bi,ei) and (bi,ci) branches. -// 08/06: Units added in the parameter descriptions. - -// ********************************************************************************* -// 06/06: Comment on NODE COLLAPSING: -// Presently this verilog code permits a minimum of 1 milli-Ohm resistance for any -// series resistance as well as for thermal resistance RTH. If any of the resistance -// values drops below this minimum value, the corresponding nodes are shorted with -// zero voltage contribution. We want the model compilers/simulators deal this -// situation in such a manner that the corresponding node is COLLAPSED. -// We expect that the simulators should permit current contribution statement -// for any branch with resistance value more than (or equal to) 1 milli-Ohm without -// any convergence problem. In fact, we wish NOT to have to use a voltage contribution -// statement in our Verilog code, except as an indication for the model compiler/simulator -// to interprete a zero branch voltage as NODE-COLLAPSING action. -// ********************************************************************************** - - -//Default simulator: Spectre - -`ifdef insideADMS - `define MODEL @(initial_model) - `define NOISE @(noise) - `define ATTR(txt) (*txt*) -`else - `define MODEL - `define NOISE - `define ATTR(txt) -`endif - - -`define VPT_thresh 1.0e2 -`define Dexp_lim 80.0 -`define Cexp_lim 80.0 -`define DFa_fj 1.921812 -`define RTOLC 1.0e-5 -`define l_itmax 100 -`define TMAX 326.85 -`define TMIN -100.0 -`define LN_EXP_LIMIT 11.0 -`define MIN_R 0.001 -`define Gmin 1.0e-12 - - -//ADS -`include "constants.vams" -`include "disciplines.vams" -//`include "compact.vams" - -//Spectre -//`include "constants.h" -//`include "discipline.h" - - -// DEPLETION CHARGE CALCULATION -// Hyperbolic smoothing used; no punch-through -// INPUT: -// c_0 : zero-bias capacitance -// u_d : built-in voltage -// z : exponent coefficient -// a_j : control parameter for C peak value at high forward bias -// U_cap : voltage across junction -// IMPLICIT INPUT: -// VT : thermal voltage -// OUTPUT: -// Qz : depletion Charge -`define QJMODF(c_0,u_d,z,a_j,U_cap,Qz)\ - if(c_0 > 0.0) begin\ - DFV_f = u_d*(1.0-exp(-ln(a_j)/z));\ - DFv_e = (DFV_f-U_cap)/VT;\ - DFs_q = sqrt(DFv_e*DFv_e+`DFa_fj);\ - DFs_q2 = (DFv_e+DFs_q)*0.5;\ - DFv_j = DFV_f-VT*DFs_q2;\ - DFb = ln(1.0-DFv_j/u_d);\ - DFQ_j = c_0*u_d*(1.0-exp(DFb*(1.0-z)))/(1.0-z);\ - Qz = DFQ_j+a_j*c_0*(U_cap-DFv_j);\ - end else begin\ - Qz = 0.0;\ - end - - -// DEPLETION CHARGE CALCULATION CONSIDERING PUNCH THROUGH -// smoothing of reverse bias region (punch-through) -// and limiting to a_j=Cj,max/Cj0 for forward bias. -// Important for base-collector and collector-substrate junction -// INPUT: -// c_0 : zero-bias capacitance -// u_d : built-in voltage -// z : exponent coefficient -// a_j : control parameter for C peak value at high forward bias -// v_pt : punch-through voltage (defined as qNw^2/2e) -// U_cap : voltage across junction -// IMPLICIT INPUT: -// VT : thermal voltage -// OUTPUT: -// Qz : depletion charge -`define QJMOD(c_0,u_d,z,a_j,v_pt,U_cap,Qz)\ - if(c_0 > 0.0) begin\ - Dz_r = z/4.0;\ - Dv_p = v_pt-u_d;\ - DV_f = u_d*(1.0-exp(-ln(a_j)/z));\ - DC_max = a_j*c_0;\ - DC_c = c_0*exp((Dz_r-z)*ln(v_pt/u_d));\ - Dv_e = (DV_f-U_cap)/VT;\ - if(Dv_e < `Cexp_lim) begin\ - De = exp(Dv_e);\ - Dv_j1 = DV_f-VT*ln(1.0+De);\ - end else begin\ - Dv_j1 = U_cap;\ - end\ - Da = 0.1*Dv_p+4.0*VT;\ - Dv_r = (Dv_p+Dv_j1)/Da;\ - if(Dv_r < `Cexp_lim) begin\ - De = exp(Dv_r);\ - Dv_j2 = -Dv_p+Da*ln(1.0+De);\ - end else begin\ - Dv_j2 = Dv_j1;\ - end\ - Dv_j4 = U_cap-Dv_j1;\ - DCln1 = ln(1.0-Dv_j1/u_d);\ - DCln2 = ln(1.0-Dv_j2/u_d);\ - Dz1 = 1.0-z;\ - Dzr1 = 1.0-Dz_r;\ - DQ_j1 = c_0*(1.0-exp(DCln2*Dz1))/Dz1;\ - DQ_j2 = DC_c*(1.0-exp(DCln1*Dzr1))/Dzr1;\ - DQ_j3 = DC_c*(1.0-exp(DCln2*Dzr1))/Dzr1;\ - Qz = (DQ_j1+DQ_j2-DQ_j3)*u_d+DC_max*Dv_j4;\ - end else begin\ - Qz = 0.0;\ - end - - - - -// DEPLETION CHARGE CALCULATION SELECTOR -// Dependent on junction punch-through voltage -// Important for collector related junctions -`define HICJQ(c_0,u_d,z,v_pt,U_cap,Qz)\ - if(v_pt < `VPT_thresh) begin\ - `QJMOD(c_0,u_d,z,2.4,v_pt,U_cap,Qz)\ - end else begin\ - `QJMODF(c_0,u_d,z,2.4,U_cap,Qz)\ - end - - - -// A CALCULATION NEEDED FOR COLLECTOR MINORITY CHARGE FORMULATION -// INPUT: -// zb,zl : zeta_b and zeta_l (model parameters, TED 10/96) -// w : normalized injection width -// OUTPUT: -// hicfcio : function of equation (2.1.17-10) -`define HICFCI(zb,zl,w,hicfcio,dhicfcio_dw)\ - z = zb*w;\ - lnzb = ln(1+zb*w);\ - if(z > 1.0e-6) begin\ - x = 1.0+z;\ - a = x*x;\ - a2 = 0.250*(a*(2.0*lnzb-1.0)+1.0);\ - a3 = (a*x*(3.0*lnzb-1.0)+1.0)/9.0;\ - r = zl/zb;\ - hicfcio = ((1.0-r)*a2+r*a3)/zb;\ - dhicfcio_dw = ((1.0-r)*x+r*a)*lnzb;\ - end else begin\ - a = z*z;\ - a2 = 3.0+z-0.25*a+0.10*z*a;\ - a3 = 2.0*z+0.75*a-0.20*a*z;\ - hicfcio = (zb*a2+zl*a3)*w*w/6.0;\ - dhicfcio_dw = (1+zl*w)*(1+z)*lnzb;\ - end - - -// NEEDED TO CALCULATE WEIGHTED ICCR COLLECTOR MINORITY CHARGE -// INPUT: -// z : zeta_b or zeta_l -// w : normalized injection width -// OUTPUT: -// hicfcto : output -// dhicfcto_dw : derivative of output wrt w -`define HICFCT(z,w,hicfcto,dhicfcto_dw)\ - a = z*w;\ - lnz = ln(1+z*w);\ - if (a > 1.0e-6) begin\ - hicfcto = (a - lnz)/z;\ - dhicfcto_dw = a / (1.0 + a);\ - end else begin\ - hicfcto = 0.5 * a * w;\ - dhicfcto_dw = a;\ - end - - -// COLLECTOR CURRENT SPREADING CALCULATION -// collector minority charge incl. 2D/3D current spreading (TED 10/96) -// INPUT: -// Ix : forward transport current component (itf) -// I_CK : critical current -// FFT_pcS : dependent on fthc and thcs (parameters) -// IMPLICIT INPUT: -// ahc, latl, latb : model parameters -// VT : thermal voltage -// OUTPUT: -// Q_fC, Q_CT: actual and ICCR (weighted) hole charge -// T_fC, T_cT: actual and ICCR (weighted) transit time -// Derivative dfCT_ditf not properly implemented yet -`define HICQFC(Ix,I_CK,FFT_pcS,Q_fC,Q_CT,T_fC,T_cT)\ - Q_fC = FFT_pcS*Ix;\ - FCa = 1.0-I_CK/Ix;\ - FCrt = sqrt(FCa*FCa+ahc);\ - FCa_ck = 1.0-(FCa+FCrt)/(1.0+sqrt(1.0+ahc));\ - FCdaick_ditf = (FCa_ck-1.0)*(1-FCa)/(FCrt*Ix);\ - if(latb > latl) begin\ - FCz = latb-latl;\ - FCxl = 1.0+latl;\ - FCxb = 1.0+latb;\ - if(latb > 0.01) begin\ - FCln = ln(FCxb/FCxl);\ - FCa1 = exp((FCa_ck-1.0)*FCln);\ - FCd_a = 1.0/(latl-FCa1*latb);\ - FCw = (FCa1-1.0)*FCd_a;\ - FCdw_daick = -FCz*FCa1*FCln*FCd_a*FCd_a;\ - FCa1 = ln((1.0+latb*FCw)/(1.0+latl*FCw));\ - FCda1_dw = latb/(1.0+latb*FCw) - latl/(1.0+latl*FCw);\ - end else begin\ - FCf1 = 1.0-FCa_ck;\ - FCd_a = 1.0/(1.0+FCa_ck*latb);\ - FCw = FCf1*FCd_a;\ - FCdw_daick = -1.0*FCd_a*FCd_a*FCxb*FCd_a;\ - FCa1 = FCz*FCw;\ - FCda1_dw = FCz;\ - end\ - FCf_CT = 2.0/FCz;\ - FCw2 = FCw*FCw;\ - FCf1 = latb*latl*FCw*FCw2/3.0+(latb+latl)*FCw2/2.0+FCw;\ - FCdf1_dw = latb*latl*FCw2 + (latb+latl)*FCw + 1.0;\ - `HICFCI(latb,latl,FCw,FCf2,FCdf2_dw)\ - `HICFCI(latl,latb,FCw,FCf3,FCdf3_dw)\ - FCf_ci = FCf_CT*(FCa1*FCf1-FCf2+FCf3);\ - FCdfc_dw = FCf_CT*(FCa1*FCdf1_dw+FCda1_dw*FCf1-FCdf2_dw+FCdf3_dw);\ - FCdw_ditf = FCdw_daick*FCdaick_ditf;\ - FCdfc_ditf = FCdfc_dw*FCdw_ditf;\ - if(flcomp == 0.0 || flcomp == 2.1) begin\ - `HICFCT(latb,FCw,FCf2,FCdf2_dw)\ - `HICFCT(latl,FCw,FCf3,FCdf3_dw)\ - FCf_CT = FCf_CT*(FCf2-FCf3);\ - FCdfCT_dw = FCf_CT*(FCdf2_dw-FCdf3_dw);\ - FCdfCT_ditf = FCdfCT_dw*FCdw_ditf;\ - end else begin\ - FCf_CT = FCf_ci;\ - FCdfCT_ditf = FCdfc_ditf;\ - end\ - end else begin\ - if(latb > 0.01) begin\ - FCd_a = 1.0/(1.0+FCa_ck*latb);\ - FCw = (1.0-FCa_ck)*FCd_a;\ - FCdw_daick = -(1.0+latb)*FCd_a*FCd_a;\ - end else begin\ - FCw = 1.0-FCa_ck-FCa_ck*latb;\ - FCdw_daick = -(1.0+latb);\ - end\ - FCw2 = FCw*FCw;\ - FCz = latb*FCw;\ - FCz_1 = 1.0+FCz;\ - FCd_f = 1.0/(FCz_1);\ - FCf_ci = FCw2*(1.0+FCz/3.0)*FCd_f;\ - FCdfc_dw = 2.0*FCw*(FCz_1+FCz*FCz/3.0)*FCd_f*FCd_f;\ - FCdw_ditf = FCdw_daick*FCdaick_ditf;\ - FCdfc_ditf = FCdfc_dw*FCdw_ditf;\ - if(flcomp == 0.0 || flcomp == 2.1) begin\ - if (FCz > 0.001) begin\ - FCf_CT = 2.0*(FCz_1*ln(FCz_1)-FCz)/(latb*latb*FCz_1);\ - FCdfCT_dw = 2.0*FCw*FCd_f*FCd_f;\ - end else begin\ - FCf_CT = FCw2*(1.0-FCz/3.0)*FCd_f;\ - FCdfCT_dw = 2.0*FCw*(1.0-FCz*FCz/3.0)*FCd_f*FCd_f;\ - end\ - FCdfCT_ditf = FCdfCT_dw*FCdw_ditf;\ - end else begin\ - FCf_CT = FCf_ci;\ - FCdfCT_ditf = FCdfc_ditf;\ - end\ - end\ - Q_CT = Q_fC*FCf_CT;\ - Q_fC = Q_fC*FCf_ci;\ - T_fC = FFT_pcS*(FCf_ci+Ix*FCdfc_ditf);\ - T_cT = FFT_pcS*(FCf_CT+Ix*FCdfCT_ditf); - -// TRANSIT-TIME AND STORED MINORITY CHARGE -// INPUT: -// itf : forward transport current -// I_CK : critical current -// T_f : transit time \ -// Q_f : minority charge / for low current -// IMPLICIT INPUT: -// tef0, gtfe, fthc, thcs, ahc, latl, latb : model parameters -// OUTPUT: -// T_f : transit time \ -// Q_f : minority charge / transient analysis -// T_fT : transit time \ -// Q_fT : minority charge / ICCR (transfer current) -// Q_bf : excess base charge -`define HICQFF(itf,I_CK,T_f,Q_f,T_fT,Q_fT,Q_bf)\ - if(itf < 1.0e-6*I_CK) begin\ - Q_fT = Q_f;\ - T_fT = T_f;\ - end else begin\ - FFa = I_CK/itf;\ - FFd_TfE = tef0_t*exp(-gtfe*ln(FFa));\ - FFd_QfE = FFd_TfE*itf/(gtfe+1.0);\ - FFT_fbS = (1.0-fthc)*thcs_t;\ - FFx = 1.0-FFa;\ - FFs = sqrt(FFx*FFx+ahc);\ - FFw = (FFx+FFs)/(1.0+sqrt(1.0+ahc));\ - FFw_2 = FFw*FFw;\ - FFd_QfB = FFT_fbS*itf*FFw_2;\ - Q_bf = FFd_QfB;\ - FFa_w = FFw_2*(1.0+2.0*FFa/FFs);\ - FFd_TfB = FFT_fbS*FFa_w;\ - FFT_pcS = fthc*thcs_t;\ - if(latb <= 0.0 && latl <= 0.0) begin\ - FFQ_fC = FFT_pcS*itf*FFw_2;\ - FFT_fC = FFT_pcS*FFa_w;\ - FFQ_cT = FFQ_fC;\ - FFT_cT = FFT_fC;\ - end else begin\ - `HICQFC(itf,I_CK,FFT_pcS,FFQ_fC,FFQ_cT,FFT_fC,FFT_cT)\ - end\ - Q_f = Q_f+FFd_QfB;\ - T_f = T_f+FFd_TfB;\ - Q_fT = Q_f+hfe*FFd_QfE+hfc*FFQ_cT;\ - T_fT = T_f+hfe*FFd_TfE+hfc*FFT_cT;\ - Q_f = Q_f+FFd_QfE+FFQ_fC;\ - T_f = T_f+FFd_TfE+FFT_fC;\ - end - - - - -// IDEAL DIODE (WITHOUT CAPACITANCE): -// conductance calculation not required -// INPUT: -// IS, IST : saturation currents (model parameter related) -// UM1 : ideality factor -// U : branch voltage -// IMPLICIT INPUT: -// VT : thermal voltage -// OUTPUT: -// Iz : diode current -`define HICDIO(IS,IST,UM1,U,Iz)\ - DIOY = U/(UM1*VT);\ - if (IS > 0.0) begin\ - if (DIOY > `Dexp_lim) begin\ - le = (1 + (DIOY - `Dexp_lim));\ - DIOY = `Dexp_lim;\ - end else begin\ - le = 1;\ - end\ - le = le*limexp(DIOY);\ - Iz = IST*(le-1.0);\ - if(DIOY <= -14.0) begin\ - Iz = -IST;\ - end\ - end else begin\ - Iz = 0.0;\ - end - - - -// TEMPERATURE UPDATE OF JUNCTION CAPACITANCE RELATED PARAMETERS -// INPUT: -// mostly model parameters -// x : zero bias junction capacitance -// y : junction built-in potencial -// z : grading co-efficient -// w : ratio of maximum to zero-bias value of capacitance or punch-through voltage -// is_al : condition factor to check what "w" stands for -// vgeff : band-gap voltage -// IMPLICIT INPUT: -// VT : thermal voltage -// vt0,qtt0,ln_qtt0,mg : other model variables -// OUTPUT: -// c_j_t : temperature update of "c_j" -// vd_t : temperature update of "vd0" -// w_t : temperature update of "w" -`define TMPHICJ(c_j,vd0,z,w,is_al,vgeff,c_j_t,vd_t,w_t)\ - if (c_j > 0.0) begin\ - vdj0 = 2*vt0*ln(exp(vd0*0.5/vt0)-exp(-0.5*vd0/vt0));\ - vdjt = vdj0*qtt0+vgeff*(1-qtt0)-mg*VT*ln_qtt0;\ - vdt = vdjt+2*VT*ln(0.5*(1+sqrt(1+4*exp(-vdjt/VT))));\ - vd_t = vdt;\ - c_j_t = c_j*exp(z*ln(vd0/vd_t));\ - if (is_al == 1) begin\ - w_t = w*vd_t/vd0;\ - end else begin\ - w_t = w;\ - end\ - end else begin\ - c_j_t = c_j;\ - vd_t = vd0;\ - w_t = w;\ - end - - - - - -module hicumL2V2p23 (c,b,e,s,tnode); - -//Node definitions - -inout c,b,e,s,tnode; -electrical c,b,e,s,ci,ei,bp,bi,si; -electrical xf1,xf2,xf3,xf4; -electrical tnode; -electrical n1,n2; - -//Branch definitions -branch (b,bp) br_bbp_i; -branch (b,bp) br_bbp_v; -branch (ci,c) br_cic_i; -branch (ci,c) br_cic_v; -branch (ei,e) br_eie_i; -branch (ei,e) br_eie_v; -branch (bp,bi) br_bpbi_i; -branch (bp,bi) br_bpbi_v; -branch (si,s) br_sis_i; -branch (si,s) br_sis_v; -branch (bi,ei) br_biei; -branch (bi,ci) br_bici; -branch (ci,bi) br_cibi; -branch (ci,ei) br_ciei; -branch (ei,ci) br_eici; -branch (bp,e) br_bpe; -branch (b,e) br_be; -branch (bp,ei) br_bpei; -branch (bp,ci) br_bpci; -branch (b,ci) br_bci; -branch (si,ci) br_sici; -branch (bp,si) br_bpsi; -branch (tnode ) br_sht; - -//Phase network for ITF -branch (xf1 ) br_bxf1; -branch (xf1 ) br_cxf1; -branch (xf2 ) br_bxf2; -branch (xf2 ) br_cxf2; -//Phase network for QF -branch (xf3 ) br_bxf3; -branch (xf3 ) br_cxf3; -branch (xf4 ) br_bxf4; -branch (xf4 ) br_cxf4; - -//Noise - -branch (n1 ) b_n1; -branch (n2 ) b_n2; - - - -// -- ########################################################### -// -- ########### Parameters initialization ################ -// -- ########################################################### - - -//Transfer current -parameter real c10 = 2.0E-30 from [0:1] `ATTR(info="GICCR constant" unit="A^2s"); -parameter real qp0 = 2.0E-14 from (0:1] `ATTR(info="Zero-bias hole charge" unit="Coul"); -parameter real ich = 0.0 from [0:inf) `ATTR(info="High-current correction for 2D and 3D effects" unit="A"); //`0' signifies infinity -parameter real hfe = 1.0 from [0:inf] `ATTR(info="Emitter minority charge weighting factor in HBTs"); -parameter real hfc = 1.0 from [0:inf] `ATTR(info="Collector minority charge weighting factor in HBTs"); -parameter real hjei = 1.0 from [0:100] `ATTR(info="B-E depletion charge weighting factor in HBTs"); -parameter real hjci = 1.0 from [0:100] `ATTR(info="B-C depletion charge weighting factor in HBTs"); - -//Base-Emitter diode currents -parameter real ibeis = 1.0E-18 from [0:1] `ATTR(info="Internal B-E saturation current" unit="A"); -parameter real mbei = 1.0 from (0:10] `ATTR(info="Internal B-E current ideality factor"); -parameter real ireis = 0.0 from [0:1] `ATTR(info="Internal B-E recombination saturation current" unit="A"); -parameter real mrei = 2.0 from (0:10] `ATTR(info="Internal B-E recombination current ideality factor"); -parameter real ibeps = 0.0 from [0:1] `ATTR(info="Peripheral B-E saturation current" unit="A"); -parameter real mbep = 1.0 from (0:10] `ATTR(info="Peripheral B-E current ideality factor"); -parameter real ireps = 0.0 from [0:1] `ATTR(info="Peripheral B-E recombination saturation current" unit="A"); -parameter real mrep = 2.0 from (0:10] `ATTR(info="Peripheral B-E recombination current ideality factor"); -parameter real mcf = 1.0 from (0:10] `ATTR(info="Non-ideality factor for III-V HBTs"); - -//Transit time for excess recombination current at b-c barrier -parameter real tbhrec = 0.0 from [0:inf) `ATTR(info="Base current recombination time constant at B-C barrier for high forward injection" unit="s"); - -//Base-Collector diode currents -parameter real ibcis = 1.0E-16 from [0:1.0] `ATTR(info="Internal B-C saturation current" unit="A"); -parameter real mbci = 1.0 from (0:10] `ATTR(info="Internal B-C current ideality factor"); -parameter real ibcxs = 0.0 from [0:1.0] `ATTR(info="External B-C saturation current" unit="A"); -parameter real mbcx = 1.0 from (0:10] `ATTR(info="External B-C current ideality factor"); - -//Base-Emitter tunneling current -parameter real ibets = 0.0 from [0:1] `ATTR(info="B-E tunneling saturation current" unit="A"); -parameter real abet = 40 from [0:inf) `ATTR(info="Exponent factor for tunneling current"); -parameter integer tunode= 1 from [0:1] `ATTR(info="Specifies the base node connection for the tunneling current"); // =1 signifies perimeter node - -//Base-Collector avalanche current -parameter real favl = 0.0 from [0:inf) `ATTR(info="Avalanche current factor" unit="1/V"); -parameter real qavl = 0.0 from [0:inf) `ATTR(info="Exponent factor for avalanche current" unit="Coul"); -parameter real alfav = 0.0 `ATTR(info="Relative TC for FAVL" unit="1/K"); -parameter real alqav = 0.0 `ATTR(info="Relative TC for QAVL" unit="1/K"); - -//Series resistances -parameter real rbi0 = 0.0 from [0:inf) `ATTR(info="Zero bias internal base resistance" unit="Ohm"); -parameter real rbx = 0.0 from [0:inf) `ATTR(info="External base series resistance" unit="Ohm"); -parameter real fgeo = 0.6557 from [0:inf] `ATTR(info="Factor for geometry dependence of emitter current crowding"); -parameter real fdqr0 = 0.0 from [-0.5:100] `ATTR(info="Correction factor for modulation by B-E and B-C space charge layer"); -parameter real fcrbi = 0.0 from [0:1] `ATTR(info="Ratio of HF shunt to total internal capacitance (lateral NQS effect)"); -parameter real fqi = 1.0 from [0:1] `ATTR(info="Ration of internal to total minority charge"); -parameter real re = 0.0 from [0:inf) `ATTR(info="Emitter series resistance" unit="Ohm"); -parameter real rcx = 0.0 from [0:inf) `ATTR(info="External collector series resistance" unit="Ohm"); - -//Substrate transistor -parameter real itss = 0.0 from [0:1.0] `ATTR(info="Substrate transistor transfer saturation current" unit="A"); -parameter real msf = 1.0 from (0:10] `ATTR(info="Forward ideality factor of substrate transfer current"); -parameter real iscs = 0.0 from [0:1.0] `ATTR(info="C-S diode saturation current" unit="A"); -parameter real msc = 1.0 from (0:10] `ATTR(info="Ideality factor of C-S diode current"); -parameter real tsf = 0.0 from [0:inf) `ATTR(info="Transit time for forward operation of substrate transistor" unit="s"); - -//Intra-device substrate coupling -parameter real rsu = 0.0 from [0:inf) `ATTR(info="Substrate series resistance" unit="Ohm"); -parameter real csu = 0.0 from [0:inf) `ATTR(info="Substrate shunt capacitance" unit="F"); - -//Depletion Capacitances -parameter real cjei0 = 1.0E-20 from [0:inf) `ATTR(info="Internal B-E zero-bias depletion capacitance" unit="F"); -parameter real vdei = 0.9 from (0:10] `ATTR(info="Internal B-E built-in potential" unit="V"); -parameter real zei = 0.5 from (0:1] `ATTR(info="Internal B-E grading coefficient"); -parameter real ajei = 2.5 from [1:inf) `ATTR(info="Ratio of maximum to zero-bias value of internal B-E capacitance"); -parameter real cjep0 = 1.0E-20 from [0:inf) `ATTR(info="Peripheral B-E zero-bias depletion capacitance" unit="F"); -parameter real vdep = 0.9 from (0:10] `ATTR(info="Peripheral B-E built-in potential" unit="V"); -parameter real zep = 0.5 from (0:1] `ATTR(info="Peripheral B-E grading coefficient"); -parameter real ajep = 2.5 from [1:inf) `ATTR(info="Ratio of maximum to zero-bias value of peripheral B-E capacitance"); -parameter real cjci0 = 1.0E-20 from [0:inf) `ATTR(info="Internal B-C zero-bias depletion capacitance" unit="F"); -parameter real vdci = 0.7 from (0:10] `ATTR(info="Internal B-C built-in potential" unit="V"); -parameter real zci = 0.4 from (0:1] `ATTR(info="Internal B-C grading coefficient"); -parameter real vptci = 100 from (0:100] `ATTR(info="Internal B-C punch-through voltage" unit="V"); -parameter real cjcx0 = 1.0E-20 from [0:inf) `ATTR(info="External B-C zero-bias depletion capacitance" unit="F"); -parameter real vdcx = 0.7 from (0:10] `ATTR(info="External B-C built-in potential" unit="V"); -parameter real zcx = 0.4 from (0:1] `ATTR(info="External B-C grading coefficient"); -parameter real vptcx = 100 from (0:100] `ATTR(info="External B-C punch-through voltage" unit="V"); -parameter real fbcpar = 0.0 from [0:1] `ATTR(info="Partitioning factor of parasitic B-C cap"); -parameter real fbepar = 1.0 from [0:1] `ATTR(info="Partitioning factor of parasitic B-E cap"); -parameter real cjs0 = 0.0 from [0:inf) `ATTR(info="C-S zero-bias depletion capacitance" unit="F"); -parameter real vds = 0.6 from (0:10] `ATTR(info="C-S built-in potential" unit="V"); -parameter real zs = 0.5 from (0:1] `ATTR(info="C-S grading coefficient"); -parameter real vpts = 100 from (0:100] `ATTR(info="C-S punch-through voltage" unit="V"); - -//Diffusion Capacitances -parameter real t0 = 0.0 from [0:inf) `ATTR(info="Low current forward transit time at VBC=0V" unit="s"); -parameter real dt0h = 0.0 `ATTR(info="Time constant for base and B-C space charge layer width modulation" unit="s"); -parameter real tbvl = 0.0 from [0:inf) `ATTR(info="Time constant for modelling carrier jam at low VCE" unit="s"); -parameter real tef0 = 0.0 from [0:inf) `ATTR(info="Neutral emitter storage time" unit="s"); -parameter real gtfe = 1.0 from (0:10] `ATTR(info="Exponent factor for current dependence of neutral emitter storage time"); -parameter real thcs = 0.0 from [0:inf) `ATTR(info="Saturation time constant at high current densities" unit="s"); -parameter real ahc = 0.1 from (0:10] `ATTR(info="Smoothing factor for current dependence of base and collector transit time"); -parameter real fthc = 0.0 from [0:1] `ATTR(info="Partitioning factor for base and collector portion"); -parameter real rci0 = 150 from (0:inf) `ATTR(info="Internal collector resistance at low electric field" unit="Ohm"); -parameter real vlim = 0.5 from (0:10] `ATTR(info="Voltage separating ohmic and saturation velocity regime" unit="V"); -parameter real vces = 0.1 from [0:1] `ATTR(info="Internal C-E saturation voltage" unit="V"); -parameter real vpt = 0.0 from [0:inf] `ATTR(info="Collector punch-through voltage" unit="V"); // `0' signifies infinity -parameter real tr = 0.0 from [0:inf) `ATTR(info="Storage time for inverse operation" unit="s"); - -//Isolation Capacitances -parameter real cbepar = 0.0 from [0:inf) `ATTR(info="Total parasitic B-E capacitance" unit="F"); -parameter real cbcpar = 0.0 from [0:inf) `ATTR(info="Total parasitic B-C capacitance" unit="F"); - -//Non-quasi-static Effect -parameter real alqf = 0.0 from [0:1] `ATTR(info="Factor for additional delay time of minority charge"); -parameter real alit = 0.0 from [0:1] `ATTR(info="Factor for additional delay time of transfer current"); -parameter integer flnqs = 0 from [0:1] `ATTR(info="Flag for turning on and off of vertical NQS effect"); - -//Noise -parameter real kf = 0.0 from [0:inf) `ATTR(info="Flicker noise coefficient"); -parameter real af = 2.0 from (0:10] `ATTR(info="Flicker noise exponent factor"); -parameter integer cfbe = -1 from [-2:-1] `ATTR(info="Flag for determining where to tag the flicker noise source"); - - -//Lateral Geometry Scaling (at high current densities) -parameter real latb = 0.0 from [0:inf) `ATTR(info="Scaling factor for collector minority charge in direction of emitter width"); -parameter real latl = 0.0 from [0:inf) `ATTR(info="Scaling factor for collector minority charge in direction of emitter length"); - -//Temperature dependence -parameter real vgb = 1.17 from (0:10] `ATTR(info="Bandgap voltage extrapolated to 0 K" unit="V"); -parameter real alt0 = 0.0 `ATTR(info="First order relative TC of parameter T0" unit="1/K"); -parameter real kt0 = 0.0 `ATTR(info="Second order relative TC of parameter T0"); -parameter real zetaci = 0.0 `ATTR(info="Temperature exponent for RCI0"); -parameter real alvs = 0.0 `ATTR(info="Relative TC of saturation drift velocity" unit="1/K"); -parameter real alces = 0.0 `ATTR(info="Relative TC of VCES" unit="1/K"); -parameter real zetarbi = 0.0 `ATTR(info="Temperature exponent of internal base resistance"); -parameter real zetarbx = 0.0 `ATTR(info="Temperature exponent of external base resistance"); -parameter real zetarcx = 0.0 `ATTR(info="Temperature exponent of external collector resistance"); -parameter real zetare = 0.0 `ATTR(info="Temperature exponent of emitter resistance"); -parameter real zetacx = 1.0 `ATTR(info="Temperature exponent of mobility in substrate transistor transit time"); -parameter real vge = 1.17 from (0:10] `ATTR(info="Effective emitter bandgap voltage" unit="V"); -parameter real vgc = 1.17 from (0:10] `ATTR(info="Effective collector bandgap voltage" unit="V"); -parameter real vgs = 1.17 from (0:10] `ATTR(info="Effective substrate bandgap voltage" unit="V"); -parameter real f1vg =-1.02377e-4 `ATTR(info="Coefficient K1 in T-dependent band-gap equation"); -parameter real f2vg = 4.3215e-4 `ATTR(info="Coefficient K2 in T-dependent band-gap equation"); -parameter real zetact = 3.0 `ATTR(info="Exponent coefficient in transfer current temperature dependence"); -parameter real zetabet = 3.5 `ATTR(info="Exponent coefficient in B-E junction current temperature dependence"); -parameter real alb = 0.0 `ATTR(info="Relative TC of forward current gain for V2.1 model" unit="1/K"); - -//Self-Heating -parameter integer flsh = 0 from [0:2] `ATTR(info="Flag for turning on and off self-heating effect"); -parameter real rth = 0.0 from [0:inf) `ATTR(info="Thermal resistance" unit="K/W"); -parameter real cth = 0.0 from [0:inf) `ATTR(info="Thermal capacitance" unit="J/W"); - -//Compatibility with V2.1 -parameter real flcomp = 0.0 from [0:inf) `ATTR(info="Flag for compatibility with v2.1 model (0=v2.1)"); - -//Circuit simulator specific parameters -parameter real tnom = 27.0 `ATTR(info="Temperature at which parameters are specified" unit="C"); -parameter real dt = 0.0 `ATTR(info="Temperature change w.r.t. chip temperature for particular transistor" unit="K"); - - -// -//======================== Transistor model formulation =================== -// - - //Declaration of variables - - //Temperature and drift - real VT,Tdev,qtt0,ln_qtt0,r_VgVT,V_gT,dT,k; - real ireis_t,ibeis_t,ibcxs_t,ibcis_t,iscs_t,cjci0_t; - real cjs0_t,rci0_t,vlim_t,vces_t,thcs_t,tef0_t,rbi0_t; - real rbx_t,rcx_t,re_t,t0_t,vdei_t,vdci_t,vpts_t,itss_t,tsf_t; - real c10_t,cjei0_t,qp0_t,vdcx_t,vptcx_t,cjcx01_t,cjcx02_t; - real qjcx0_t_i,qjcx0_t_ii,cratio_t; - real ibeps_t,ireps_t,cjep0_t; - real ajei_t,qavl_t,favl_t,ibets_t,abet_t,vptci_t,vdep_t,ajep_t,zetatef; - real k1,k2,dvg0,vge_t,vgb_t,vgbe_t,vds_t,vt0,Tnom,Tamb,a,avs; - real zetabci,zetabcxt,zetasct,vgbe0,mg,vgb_t0,vge_t0,vgbe_t0,vgbc0,vgsc0; - real cbcpar1,cbcpar2,cbepar2,cbepar1,Oich,Ovpt,Otbhrec; - - //Charges, capacitances and currents - real Qjci,Qjei,Qjep; - real it,ibei,irei,ibci,ibep,irep,ibh_rec; - real Qdei,Qdci,qrbi; - real ibet,iavl; - real ijbcx,ijsc,Qjs,HSUM,HSI_Tsu,Qdsu; - - //Base resistance and self-heating power - real rbi,pterm; - - //Variables for macro TMPHICJ - real vdj0,vdjt,vdt; - - //Model initialization - real k10,k20,C_1; - - //Model evaluation - real Cjci,Cjcit,cc,Cjei,Cjep; - real itf,itr,Tf,Tr,VT_f,i_0f,i_0r,a_bpt,Q_0,Q_p,Q_bpt; - real Orci0_t,b_q,Q_fC,T_fC,T_cT,I_Tf1,T_f0,Q_fT,T_fT,Q_bf; - real ICKa,d1; - real A,a_h,Q_pT,d_Q,d_Q0; - real Qf,Cdei,Qr,Cdci,Crbi; - real ick,vc,vceff,cjcx01,cjcx02,HSa,HSb; - integer l_it; - - //Variables for macros - real DIOY,le;//HICDIO - real FFT_fbS,FFa,FFx,FFs,FFw,FFw_2,FFd_QfB,FFd_TfB,FFT_pcS,FFQ_fC,FFT_fC,FFQ_cT,FFT_cT,FFd_TfE,FFd_QfE,FFa_w;//HICQFF - real FCz,FCw2,FCf1,FCf2,FCf3,FCf_ci,FCz_1,FCa1,FCa_ck,FCxl,FCxb;//HICQFC - real FCd_a,FCdaick_ditf,FCa,FCw,FCdw_daick,FCdfc_dw,FCdw_ditf,FCdfc_ditf,FCf_CT,FCdfCT_ditf,FCrt,FCln,lnz,FCda1_dw,FCdf1_dw,FCdf2_dw,FCdf3_dw,FCd_f,FCdfCT_dw;//HICQFC - real Dz_r,Dv_p,DV_f,DC_max,DC_c,Da,Dv_e,De,De_1,Dv_j1,Dv_r,De_2,Dv_j2,Dv_j4,DQ_j1,DQ_j2,DQ_j3,DCln1,DCln2,Dz1,Dzr1;//QJMOD - real DFV_f,DFv_e,DFv_j,DFb,DFQ_j,DFs_q,DFs_q2;//QJMODF - real z,a2,a3,r,x;//HICFCI - real zb,zl,lnzb,w,hicfcio,dhicfcio_dw; //HICFCT - - //Noise - real fourkt,twoq,flicker_Pwr; - real thermal_Rbx,thermal_Rbi,thermal_Rcx,thermal_Re,betad,betan,betadin,betadc,icn,icn1,icn2; - - //NQS - real Ixf1,Ixf2,Qxf1,Qxf2,Vxf1,Vxf2,Itxf,TD1; - real Ixf3,Ixf4,Qxf3,Qxf4,Vxf3,Vxf4,Qdeix,TD2; - real T; - //end of variables - -analog begin - -`MODEL begin : Model_initialization - - Tnom = tnom+`P_CELSIUS0; - Tamb = $temperature; - vt0 = `P_K*Tnom /`P_Q; - k10 = f1vg*Tnom*ln(Tnom); - k20 = f2vg*Tnom; - avs = alvs*Tnom; - vgb_t0 = vgb+k10+k20; - vge_t0 = vge+k10+k20; - vgbe_t0 = (vgb_t0+vge_t0)/2; - vgbe0 = (vgb+vge)/2; - vgbc0 = (vgb+vgc)/2; - vgsc0 = (vgs+vgc)/2; - mg = 3-`P_Q*f1vg/`P_K; - zetabci = mg+1-zetaci; - zetabcxt= mg+1-zetacx; - zetasct = mg-1.5; - - //Depletion capacitance splitting at b-c junction - //Capacitances at peripheral and external base node - C_1 = (1.0-fbcpar)*(cjcx0+cbcpar); - if (C_1 >= cbcpar) begin - cbcpar1 = cbcpar; - cbcpar2 = 0.0; - cjcx01 = C_1-cbcpar; - cjcx02 = cjcx0-cjcx01; - end else begin - cbcpar1 = C_1; - cbcpar2 = cbcpar-cbcpar1; - cjcx01 = 0.0; - cjcx02 = cjcx0; - end - - //Parasitic b-e capacitance partitioning: No temperature dependence - cbepar2 = fbepar*cbepar; - cbepar1 = cbepar-cbepar2; - - //Avoid devide-by-zero and define infinity other way - //High current correction for 2D and 3D effects - if (ich != 0.0) begin - Oich = 1.0/ich; - end else begin - Oich = 0.0; - end - - //Base current recombination time constant at b-c barrier - if (tbhrec != 0.0) begin - Otbhrec = 1.0/tbhrec; - end else begin - Otbhrec = 0.0; - end - - //Collector punch-through voltage - if(vpt != 0.0) begin - Ovpt = 1.0/vpt; - end else begin - Ovpt = 0.0; - end - - // Temperature and resulting parameter drift - if (flsh==0 || rth < `MIN_R) begin : Thermal_updat_without_self_heating - Tdev = Tamb+dt; - if(Tdev < `TMIN + 273.15) begin - Tdev = `TMIN + 273.15; - end else begin - if (Tdev > `TMAX + 273.15) begin - Tdev = `TMAX + 273.15; - end - end - VT = `P_K*Tdev /`P_Q; - dT = Tdev-Tnom; - qtt0 = Tdev/Tnom; - ln_qtt0 = ln(qtt0); - k1 = f1vg*Tdev*ln(Tdev); - k2 = f2vg*Tdev; - vgb_t = vgb+k1+k2; - vge_t = vge+k1+k2; - vgbe_t = (vgb_t+vge_t)/2; - - //Internal b-e junction capacitance - `TMPHICJ(cjei0,vdei,zei,ajei,1,vgbe0,cjei0_t,vdei_t,ajei_t) - - if (flcomp == 0.0 || flcomp == 2.1) begin - V_gT = 3.0*VT*ln_qtt0 + vgb*(qtt0-1.0); - r_VgVT = V_gT/VT; - //Internal b-e diode saturation currents - a = mcf*r_VgVT/mbei - alb*dT; - ibeis_t = ibeis*exp(a); - a = mcf*r_VgVT/mrei - alb*dT; - ireis_t = ireis*exp(a); - a = mcf*r_VgVT/mbep - alb*dT; - //Peripheral b-e diode saturation currents - ibeps_t = ibeps*exp(a); - a = mcf*r_VgVT/mrep - alb*dT; - ireps_t = ireps*exp(a); - //Internal b-c diode saturation current - a = r_VgVT/mbci; - ibcis_t = ibcis*exp(a); - //External b-c diode saturation currents - a = r_VgVT/mbcx; - ibcxs_t = ibcxs*exp(a); - //Saturation transfer current for substrate transistor - a = r_VgVT/msf; - itss_t = itss*exp(a); - //Saturation current for c-s diode - a = r_VgVT/msc; - iscs_t = iscs*exp(a); - //Zero bias hole charge - a = vdei_t/vdei; - qp0_t = qp0*(1.0+0.5*zei*(1.0-a)); - //Voltage separating ohmic and saturation velocity regime - a = vlim*(1.0-alvs*dT)*exp(zetaci*ln_qtt0); - k = (a-VT)/VT; - if (k < `LN_EXP_LIMIT) begin - vlim_t = VT + VT*ln(1.0+exp(k)); - end else begin - vlim_t = a; - end - //Neutral emitter storage time - a = 1.0+alb*dT; - k = 0.5*(a+sqrt(a*a+0.01)); - tef0_t = tef0*qtt0/k; - end else begin - //Internal b-e diode saturation currents - ibeis_t = ibeis*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); - ireis_t = ireis*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1)); - //Peripheral b-e diode saturation currents - ibeps_t = ibeps*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); - ireps_t = ireps*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1)); - //Internal b-c diode saturation currents - ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); - //External b-c diode saturation currents - ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1)); - //Saturation transfer current for substrate transistor - itss_t = itss*exp(zetasct*ln_qtt0+vgc/VT*(qtt0-1)); - //Saturation current for c-s diode - iscs_t = iscs*exp(zetasct*ln_qtt0+vgs/VT*(qtt0-1)); - //Zero bias hole charge - a = exp(zei*ln(vdei_t/vdei)); - qp0_t = qp0*(2.0-a); - //Voltage separating ohmic and saturation velocity regime - vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); - //Neutral emitter storage time - zetatef = zetabet-zetact-0.5; - dvg0 = vgb-vge; - tef0_t = tef0*exp(zetatef*ln_qtt0-dvg0/VT*(qtt0-1)); - end - - //GICCR prefactor - c10_t = c10*exp(zetact*ln_qtt0+vgb/VT*(qtt0-1)); - - // Low-field internal collector resistance - rci0_t = rci0*exp(zetaci*ln_qtt0); - - //Voltage separating ohmic and saturation velocity regime - //vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); - - //Internal c-e saturation voltage - vces_t = vces*(1+alces*dT); - - - //Internal b-c diode saturation current - //ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); - - //Internal b-c junction capacitance - `TMPHICJ(cjci0,vdci,zci,vptci,0,vgbc0,cjci0_t,vdci_t,vptci_t) - - //Low-current forward transit time - t0_t = t0*(1+alt0*dT+kt0*dT*dT); - - //Saturation time constant at high current densities - thcs_t = thcs*exp((zetaci-1)*ln_qtt0); - - - //Avalanche caurrent factors - favl_t = favl*exp(alfav*dT); - qavl_t = qavl*exp(alqav*dT); - - //Zero bias internal base resistance - rbi0_t = rbi0*exp(zetarbi*ln_qtt0); - - - //Peripheral b-e junction capacitance - `TMPHICJ(cjep0,vdep,zep,ajep,1,vgbe0,cjep0_t,vdep_t,ajep_t) - - //Tunneling current factors - begin : HICTUN_T - real a_eg,ab,aa; - ab = 1.0; - aa = 1.0; - a_eg=vgbe_t0/vgbe_t; - if(tunode==1 && cjep0 > 0.0 && vdep >0.0) begin - ab = (cjep0_t/cjep0)*sqrt(a_eg)*vdep_t*vdep_t/(vdep*vdep); - aa = (vdep/vdep_t)*(cjep0/cjep0_t)*pow(a_eg,-1.5); - end else if (tunode==0 && cjei0 > 0.0 && vdei >0.0) begin - ab = (cjei0_t/cjei0)*sqrt(a_eg)*vdei_t*vdei_t/(vdei*vdei); - aa = (vdei/vdei_t)*(cjei0/cjei0_t)*pow(a_eg,-1.5); - end - ibets_t = ibets*ab; - abet_t = abet*aa; - end - - - //Temperature mapping for tunneling current is done inside HICTUN - - `TMPHICJ(1.0,vdcx,zcx,vptcx,0,vgbc0,cratio_t,vdcx_t,vptcx_t) - cjcx01_t=cratio_t*cjcx01; - cjcx02_t=cratio_t*cjcx02; - - - //External b-c diode saturation currents - //ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1)); - - - //Constant external series resistances - rcx_t = rcx*exp(zetarcx*ln_qtt0); - rbx_t = rbx*exp(zetarbx*ln_qtt0); - re_t = re*exp(zetare*ln_qtt0); - - //Forward transit time in substrate transistor - tsf_t = tsf*exp((zetacx-1.0)*ln_qtt0); - - //Capacitance for c-s junction - `TMPHICJ(cjs0,vds,zs,vpts,0,vgsc0,cjs0_t,vds_t,vpts_t) - - end // of Thermal_update_without_self_heating - -end //of Model_initialization - - if (flsh!=0 && rth >= `MIN_R) begin : Thermal_update_with_self_heating - Tdev = Tamb+dt+V(br_sht); - // Limit temperature to avoid FPEs in equations - if(Tdev < `TMIN + 273.15) begin - Tdev = `TMIN + 273.15; - end else begin - if (Tdev > `TMAX + 273.15) begin - Tdev = `TMAX + 273.15; - end - end - VT = `P_K*Tdev /`P_Q; - dT = Tdev-Tnom; - qtt0 = Tdev/Tnom; - ln_qtt0 = ln(qtt0); - k1 = f1vg*Tdev*ln(Tdev); - k2 = f2vg*Tdev; - vgb_t = vgb+k1+k2; - vge_t = vge+k1+k2; - vgbe_t = (vgb_t+vge_t)/2; - - //Internal b-e junction capacitance - `TMPHICJ(cjei0,vdei,zei,ajei,1,vgbe0,cjei0_t,vdei_t,ajei_t) - - if (flcomp == 0.0 || flcomp == 2.1) begin - V_gT = 3.0*VT*ln_qtt0 + vgb*(qtt0-1.0); - r_VgVT = V_gT/VT; - //Internal b-e diode saturation currents - a = mcf*r_VgVT/mbei - alb*dT; - ibeis_t = ibeis*exp(a); - a = mcf*r_VgVT/mrei - alb*dT; - ireis_t = ireis*exp(a); - a = mcf*r_VgVT/mbep - alb*dT; - //Peripheral b-e diode saturation currents - ibeps_t = ibeps*exp(a); - a = mcf*r_VgVT/mrep - alb*dT; - ireps_t = ireps*exp(a); - //Internal b-c diode saturation current - a = r_VgVT/mbci; - ibcis_t = ibcis*exp(a); - //External b-c diode saturation currents - a = r_VgVT/mbcx; - ibcxs_t = ibcxs*exp(a); - //Saturation transfer current for substrate transistor - a = r_VgVT/msf; - itss_t = itss*exp(a); - //Saturation current for c-s diode - a = r_VgVT/msc; - iscs_t = iscs*exp(a); - //Zero bias hole charge - a = vdei_t/vdei; - qp0_t = qp0*(1.0+0.5*zei*(1.0-a)); - //Voltage separating ohmic and saturation velocity regime - a = vlim*(1.0-alvs*dT)*exp(zetaci*ln_qtt0); - k = (a-VT)/VT; - if (k < `LN_EXP_LIMIT) begin - vlim_t = VT + VT*ln(1.0+exp(k)); - end else begin - vlim_t = a; - end - //Neutral emitter storage time - a = 1.0+alb*dT; - k = 0.5*(a+sqrt(a*a+0.01)); - tef0_t = tef0*qtt0/k; - end else begin - //Internal b-e diode saturation currents - ibeis_t = ibeis*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); - ireis_t = ireis*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1)); - //Peripheral b-e diode saturation currents - ibeps_t = ibeps*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); - ireps_t = ireps*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1)); - //Internal b-c diode saturation currents - ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); - //External b-c diode saturation currents - ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1)); - //Saturation transfer current for substrate transistor - itss_t = itss*exp(zetasct*ln_qtt0+vgc/VT*(qtt0-1)); - //Saturation current for c-s diode - iscs_t = iscs*exp(zetasct*ln_qtt0+vgs/VT*(qtt0-1)); - //Zero bias hole charge - a = exp(zei*ln(vdei_t/vdei)); - qp0_t = qp0*(2.0-a); - //Voltage separating ohmic and saturation velocity regime - vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); - //Neutral emitter storage time - zetatef = zetabet-zetact-0.5; - dvg0 = vgb-vge; - tef0_t = tef0*exp(zetatef*ln_qtt0-dvg0/VT*(qtt0-1)); - end - - //GICCR prefactor - c10_t = c10*exp(zetact*ln_qtt0+vgb/VT*(qtt0-1)); - - // Low-field internal collector resistance - rci0_t = rci0*exp(zetaci*ln_qtt0); - - //Voltage separating ohmic and saturation velocity regime - //vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); - - //Internal c-e saturation voltage - vces_t = vces*(1+alces*dT); - - - //Internal b-c diode saturation current - //ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); - - //Internal b-c junction capacitance - `TMPHICJ(cjci0,vdci,zci,vptci,0,vgbc0,cjci0_t,vdci_t,vptci_t) - - //Low-current forward transit time - t0_t = t0*(1+alt0*dT+kt0*dT*dT); - - //Saturation time constant at high current densities - thcs_t = thcs*exp((zetaci-1)*ln_qtt0); - - - //Avalanche caurrent factors - favl_t = favl*exp(alfav*dT); - qavl_t = qavl*exp(alqav*dT); - - //Zero bias internal base resistance - rbi0_t = rbi0*exp(zetarbi*ln_qtt0); - - - //Peripheral b-e junction capacitance - `TMPHICJ(cjep0,vdep,zep,ajep,1,vgbe0,cjep0_t,vdep_t,ajep_t) - - //Tunneling current factors - if (V(br_bpei) < 0.0 || V(br_biei) < 0.0) begin : HICTUN_T - real a_eg,ab,aa; - ab = 1.0; - aa = 1.0; - a_eg=vgbe_t0/vgbe_t; - if(tunode==1 && cjep0 > 0.0 && vdep >0.0) begin - ab = (cjep0_t/cjep0)*sqrt(a_eg)*vdep_t*vdep_t/(vdep*vdep); - aa = (vdep/vdep_t)*(cjep0/cjep0_t)*pow(a_eg,-1.5); - end else if (tunode==0 && cjei0 > 0.0 && vdei >0.0) begin - ab = (cjei0_t/cjei0)*sqrt(a_eg)*vdei_t*vdei_t/(vdei*vdei); - aa = (vdei/vdei_t)*(cjei0/cjei0_t)*pow(a_eg,-1.5); - end - ibets_t = ibets*ab; - abet_t = abet*aa; - end - - - //Temperature mapping for tunneling current is done inside HICTUN - - `TMPHICJ(1.0,vdcx,zcx,vptcx,0,vgbc0,cratio_t,vdcx_t,vptcx_t) - cjcx01_t=cratio_t*cjcx01; - cjcx02_t=cratio_t*cjcx02; - - - //External b-c diode saturation currents - //ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1)); - - - //Constant external series resistances - rcx_t = rcx*exp(zetarcx*ln_qtt0); - rbx_t = rbx*exp(zetarbx*ln_qtt0); - re_t = re*exp(zetare*ln_qtt0); - - //Forward transit time in substrate transistor - tsf_t = tsf*exp((zetacx-1.0)*ln_qtt0); - - //Capacitance for c-s junction - `TMPHICJ(cjs0,vds,zs,vpts,0,vgsc0,cjs0_t,vds_t,vpts_t) - - - end //of Thermal_update_with_self_heating - - -begin : Model_evaluation - - if(flnqs !=0) begin - Vxf1 = V(br_bxf1); - Vxf2 = V(br_bxf2); - - Vxf3 = V(br_bxf3); - Vxf4 = V(br_bxf4); - end - - //Intrinsic transistor - //Internal base currents across b-e junction - `HICDIO(ibeis,ibeis_t,mbei,V(br_biei),ibei) - `HICDIO(ireis,ireis_t,mrei,V(br_biei),irei) - - //HICCR: begin - - //Inverse of low-field internal collector resistance: needed in HICICK - Orci0_t = 1.0/rci0_t; - - //Initialization - //Transfer current, minority charges and transit times - - Tr = tr; - VT_f = mcf*VT; - i_0f = c10_t * limexp(V(br_biei)/VT_f); - i_0r = c10_t * limexp(V(br_bici)/VT); - - //Internal b-e and b-c junction capacitances and charges - `QJMODF(cjei0_t,vdei_t,zei,ajei_t,V(br_biei),Qjei) - Cjei = ddx(Qjei,V(bi)); - `HICJQ(cjci0_t,vdci_t,zci,vptci_t,V(br_bici),Qjci) - Cjci = ddx(Qjci,V(bi)); - - //Hole charge at low bias - a_bpt = 0.05; - Q_0 = qp0_t + hjei*Qjei + hjci*Qjci; - Q_bpt = a_bpt*qp0_t; - b_q = Q_0/Q_bpt-1; - Q_0 = Q_bpt*(1+(b_q +sqrt(b_q*b_q+1.921812))/2); - - //Transit time calculation at low current density - if(cjci0_t > 0.0) begin : CJMODF - real cV_f,cv_e,cs_q,cs_q2,cv_j,cdvj_dv; - cV_f = vdci_t*(1.0-exp(-ln(2.4)/zci)); - cv_e = (cV_f-V(br_bici))/VT; - cs_q = sqrt(cv_e*cv_e+1.921812); - cs_q2 = (cv_e+cs_q)*0.5; - cv_j = cV_f-VT*cs_q2; - cdvj_dv = cs_q2/cs_q; - Cjcit = cjci0_t*exp(-zci*ln(1.0-cv_j/vdci_t))*cdvj_dv+2.4*cjci0_t*(1.0-cdvj_dv); - end else begin - Cjcit = 0.0; - end - if(Cjcit > 0.0) begin - cc = cjci0_t/Cjcit; - end else begin - cc = 1.0; - end - T_f0 = t0_t+dt0h*(cc-1.0)+tbvl*(1/cc-1.0); - - //Effective collector voltage - vc = V(br_ciei)-vces_t; - - //Critical current for onset of high-current effects - begin : HICICK - a = vc/VT; - d1 = a-1; - vceff = (1.0+((d1+sqrt(d1*d1+1.921812))/2))*VT; - a = vceff/vlim_t; - ick = vceff*Orci0_t/sqrt(1.0+a*a); - ICKa = (vceff-vlim_t)*Ovpt; - ick = ick*(1.0+0.5*(ICKa+sqrt(ICKa*ICKa+1.0e-3))); - end - - //Initial formulation of forward and reverse component of transfer current - Q_p = Q_0; - if (T_f0 > 0.0 || Tr > 0.0) begin - A = 0.5*Q_0; - Q_p = A+sqrt(A*A+T_f0*i_0f+Tr*i_0r); - end - I_Tf1 =i_0f/Q_p; - a_h = Oich*I_Tf1; - itf = I_Tf1*(1.0+a_h); - itr = i_0r/Q_p; - - //Initial formulation of forward transit time, diffusion, GICCR and excess b-c charge - Q_bf = 0.0; - Tf = T_f0; - Qf = T_f0*itf; - `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf) - - //Initial formulation of reverse diffusion charge - Qr = Tr*itr; - - //Preparation for iteration to get total hole charge and related variables - l_it = 0; - if(Qf > `RTOLC*Q_p || a_h > `RTOLC) begin - //Iteration for Q_pT is required for improved initial solution - Qf = sqrt(T_f0*itf*Q_fT); - Q_pT = Q_0+Qf+Qr; - d_Q = Q_pT; - while (abs(d_Q) >= `RTOLC*abs(Q_pT) && l_it <= `l_itmax) begin - d_Q0 = d_Q; - I_Tf1 = i_0f/Q_pT; - a_h = Oich*I_Tf1; - itf = I_Tf1*(1.0+a_h); - itr = i_0r/Q_pT; - Tf = T_f0; - Qf = T_f0*itf; - `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf) - Qr = Tr*itr; - if(Oich == 0.0) begin - a = 1.0+(T_fT*itf+Qr)/Q_pT; - end else begin - a = 1.0+(T_fT*I_Tf1*(1.0+2.0*a_h)+Qr)/Q_pT; - end - d_Q = -(Q_pT-(Q_0+Q_fT+Qr))/a; - //Limit maximum change of Q_pT - a = abs(0.3*Q_pT); - if(abs(d_Q) > a) begin - if (d_Q>=0) begin - d_Q = a; - end else begin - d_Q = -a; - end - end - Q_pT = Q_pT+d_Q; - l_it = l_it+1; - end //while - - I_Tf1 = i_0f/Q_pT; - a_h = Oich*I_Tf1; - itf = I_Tf1*(1.0+a_h); - itr = i_0r/Q_pT; - - //Final transit times, charges and transport current components - Tf = T_f0; - Qf = T_f0*itf; - `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf) - Qr = Tr*itr; - - end //if - - //NQS effect implemented with LCR networks - //Once the delay in ITF is considered, IT_NQS is calculated afterwards - - it = itf-itr; - - //Diffusion charges for further use - Qdei = Qf; - Qdci = Qr; - - - //High-frequency emitter current crowding (lateral NQS) - Cdei = ddx(-1*Qdei,V(ei)); - Cdci = ddx(-1*Qdci,V(ci)); - Crbi = fcrbi*(Cjei+Cjci+Cdei+Cdci); - qrbi = Crbi*V(br_bpbi_v); - - //HICCR: end - - //Internal base current across b-c junction - `HICDIO(ibcis,ibcis_t,mbci,V(br_bici),ibci) - - //Avalanche current - if((V(br_bici) < 0.0) && (favl_t > 0.0) && (cjci0_t > 0.0)) begin : HICAVL - real v_bord,v_q,U0,av,avl,S_avl; - v_bord = vdci_t-V(br_bici); - v_q = qavl_t/Cjci; - U0 = qavl_t/cjci0_t; - if(v_bord > U0) begin - av = favl_t*exp(-v_q/U0); - avl = av*(U0+(1.0+v_q/U0)*(v_bord-U0)); - end else begin - avl = favl_t*v_bord*exp(-v_q/v_bord); - end - iavl = itf*avl; - end else begin - iavl = 0.0; - end - - //Excess base current from recombination at the b-c barrier - ibh_rec = Q_bf*Otbhrec; - - //Internal base resistance - if(rbi0_t > 0.0) begin : HICRBI - real Qz_nom,f_QR,f_p,ETA,Qz0,fQz; - // Consideration of conductivity modulation - // To avoid convergence problem hyperbolic smoothing used - f_QR = (1+fdqr0)*qp0_t; - Qz0 = Qjei+Qjci+Qf; - Qz_nom = 1+Qz0/f_QR; - fQz = 0.5*(Qz_nom+sqrt(Qz_nom*Qz_nom+0.01)); - rbi = rbi0_t/fQz; - // Consideration of emitter current crowding - if( ibei > 0.0) begin - ETA = rbi*ibei*fgeo/VT; - if(ETA < 1.0e-6) begin - rbi = rbi*(1.0-0.5*ETA); - end else begin - rbi = rbi*ln(1.0+ETA)/ETA; - end - end - // Consideration of peripheral charge - if(Qf > 0.0) begin - rbi = rbi*(Qjei+Qf*fqi)/(Qjei+Qf); - end - end else begin - rbi = 0.0; - end - - //Base currents across peripheral b-e junction - `HICDIO(ibeps,ibeps_t,mbep,V(br_bpei),ibep) - `HICDIO(ireps,ireps_t,mrep,V(br_bpei),irep) - - //Peripheral b-e junction capacitance and charge - //Following module may be replaced by calling QJMODF - //if ddx() produces correct results for Cjep using that macro. - if (cjep0_t >0.0) begin : QJEP - real V_f,v_e,s_q,s_q2,v_j,Q_j; - V_f = vdep_t*(1.0-exp(-ln(ajep_t)/zep)); - v_e = (V_f-V(br_bpei))/VT; - s_q = sqrt(v_e*v_e+1.921812); - s_q2 = (v_e+s_q)*0.5; - v_j = V_f-VT*s_q2; - Q_j = cjep0_t*vdep_t*(1.0-exp(ln(1.0-v_j/vdep_t)*(1.0-zep)))/(1.0-zep); - Qjep = Q_j+ajep_t*cjep0_t*(V(br_bpei)-v_j); - end else begin - Qjep = 0.0; - end - - //`QJMODF(cjep0_t,vdep_t,zep,ajep_t,V(br_bpei),Qjep) - Cjep = ddx(Qjep,V(bp)); - - - //Tunelling current - if (V(br_bpei) <0.0 || V(br_biei) < 0.0) begin : HICTUN - real pocce,czz; - if(tunode==1 && cjep0_t > 0.0 && vdep_t >0.0) begin - pocce = exp((1-1/zep)*ln(Cjep/cjep0_t)); - czz = -(V(br_bpei)/vdep_t)*ibets_t*pocce; - ibet = czz*exp(-abet_t/pocce); - end else if (tunode==0 && cjei0_t > 0.0 && vdei_t >0.0) begin - pocce = exp((1-1/zei)*ln(Cjei/cjei0_t)); - czz = -(V(br_biei)/vdei_t)*ibets_t*pocce; - ibet = czz*exp(-abet_t/pocce); - end else begin - ibet = 0.0; - end - end else begin - ibet = 0.0; - end - - - //Depletion capacitance and charge at peripheral b-c junction (bp,ci) - `HICJQ(cjcx02_t,vdcx_t,zcx,vptcx_t,V(br_bpci),qjcx0_t_ii) - - //Base currents across peripheral b-c junction (bp,ci) - `HICDIO(ibcxs,ibcxs_t,mbcx,V(br_bpci),ijbcx) - - //Depletion capacitance and charge at external b-c junction (b,ci) - `HICJQ(cjcx01_t,vdcx_t,zcx,vptcx_t,V(br_bci),qjcx0_t_i) - - //Depletion substrate capacitance and charge at s-c junction (si,ci) - `HICJQ(cjs0_t,vds_t,zs,vpts_t,V(br_sici),Qjs) - - //Parasitic substrate transistor transfer current and diffusion charge - if(itss > 0.0) begin : Sub_Transfer - HSUM = msf*VT; - HSa = limexp(V(br_bpci)/HSUM); - HSb = limexp(V(br_sici)/HSUM); - HSI_Tsu = itss_t*(HSa-HSb); - if(tsf > 0.0) begin - Qdsu = tsf_t*itss_t*HSa; - end else begin - Qdsu = 0.0; - end - end else begin - HSI_Tsu = 0.0; - Qdsu = 0.0; - end - - - - -// Current gain computation for correlated noise implementation - betad=ibei; - if (betad > 0.0) begin - betadin=betad; - betan=it; - betadc=betan/betad; - end else begin - betadc=0.0; - end - - - - - - //Diode current for s-c junction (si,ci) - `HICDIO(iscs,iscs_t,msc,V(br_sici),ijsc) - - //Self-heating calculation - if (flsh == 1 && rth >= `MIN_R) begin - pterm = V(br_ciei)*it + (vdci_t-V(br_bici))*iavl; - end else if (flsh == 2 && rth >= `MIN_R) begin - pterm = V(br_ciei)*it + (vdci_t-V(br_bici))*iavl + ibei*V(br_biei) + ibci*V(br_bici) + ibep*V(br_bpei) + ijbcx*V(br_bpci) + ijsc*V(br_sici); - if (rbi >= `MIN_R) begin - pterm = pterm + V(br_bpbi_i)*V(br_bpbi_i)/rbi; - end - if (re_t >= `MIN_R) begin - pterm = pterm + V(br_eie_i)*V(br_eie_i)/re_t; - end - if (rcx_t >= `MIN_R) begin - pterm = pterm + V(br_cic_i)*V(br_cic_i)/rcx_t; - end - if (rbx_t >= `MIN_R) begin - pterm = pterm + V(br_bbp_i)*V(br_bbp_i)/rbx_t; - end - end - - Itxf = itf; - Qdeix = Qdei; - // Excess Phase calculation - - if (flnqs != 0) begin - - Ixf1 = (Vxf2-itf)/Tf*t0; - Ixf2 = (Vxf2-Vxf1)/Tf*t0; - Qxf1 = alit*Vxf1*t0; - Qxf2 = alit*Vxf2/3*t0; - Itxf = Vxf2; - - Ixf3 = (Vxf4-Qdei)/Tf*t0; - Ixf4 = (Vxf4-Vxf3)/Tf*t0; - Qxf3 = alqf*Vxf3*t0; - Qxf4 = alqf*Vxf4/3*t0; - Qdeix = Vxf4; - - - end - -end //of Model_evaluation - -begin : Load_sources - - I(br_biei) <+ `Gmin*V(br_biei); - I(br_bici) <+ `Gmin*V(br_bici); - - I(br_bci) <+ ddt(qjcx0_t_i); - I(br_bci) <+ ddt(cbcpar1*V(br_bci)); - I(br_bpci) <+ ddt(cbcpar2*V(br_bpci)); - if (rbx >= `MIN_R) begin - I(br_bbp_i) <+ V(br_bbp_i)/rbx_t; - end else begin - I(br_bbp_i) <+ V(br_bbp_i)/1e-6; - //V(br_bbp_v) <+ 0.0; - end - if(rbi0 >= `MIN_R) begin - I(br_bpbi_i) <+ V(br_bpbi_i)/rbi; - I(br_bpbi_i) <+ ddt(qrbi); - end else begin - I(br_bpbi_i) <+ V(br_bpbi_i)/1e-6; - //V(br_bpbi_v) <+ 0.0; - end - if (tunode==1.0) begin - I(br_bpei) <+ -ibet; - end else begin - I(br_biei) <+ -ibet; - end - I(br_bpei) <+ ibep; - I(br_bpei) <+ irep; - I(br_bpei) <+ ddt(Qjep); - I(br_biei) <+ ibei; - I(br_biei) <+ irei; - I(br_biei) <+ ibh_rec; - I(br_biei) <+ ddt(Qdeix+Qjei); - I(br_bpsi) <+ HSI_Tsu; - I(br_bpci) <+ ijbcx; - I(br_bpci) <+ ddt(qjcx0_t_ii+Qdsu); - I(br_be) <+ ddt(cbepar1*V(br_be)); - I(br_bpe) <+ ddt(cbepar2*V(br_bpe)); - I(br_bici) <+ ibci-iavl; - I(br_bici) <+ ddt(Qdci+Qjci); - I(br_sici) <+ ijsc; - I(br_sici) <+ ddt(Qjs); - I(br_ciei) <+ Itxf; - I(br_eici) <+ itr; - if (rcx >= `MIN_R) begin - I(br_cic_i) <+ V(br_cic_i)/rcx_t; - end else begin - I(br_cic_i) <+ V(br_cic_i)/1e-6; - //V(br_cic_v) <+ 0.0; - end - if (re >= `MIN_R) begin - I(br_eie_i) <+ V(br_eie_i)/re_t; - end else begin - I(br_eie_i) <+ V(br_eie_i)/1e-6; - //V(br_eie_v) <+ 0.0; - end - if(rsu >= `MIN_R) begin - I(br_sis_i) <+ V(br_sis_i)/rsu; - I(br_sis_i) <+ ddt(csu*V(br_sis_i)); - end else begin - I(br_sis_i) <+ V(br_sis_i)/1e-6; - //V(br_sis_v) <+ 0.0; - end - - // Following code is an intermediate solution (if branch contribution is not supported): - // ****************************************** - if(flsh == 0 || rth < `MIN_R) begin - I(br_sht) <+ V(br_sht)/`MIN_R; - end else begin - I(br_sht) <+ V(br_sht)/rth-pterm; - I(br_sht) <+ ddt(cth*V(br_sht)); - end - - // ****************************************** - - // For simulators having no problem with V(br_sht) <+ 0.0 - // with external thermal node, follwing code may be used. - // Note that external thermal node should remain accessible - // even without self-heating. - // ******************************************** - // if(flsh == 0 || rth < `MIN_R) begin - // V(br_sht) <+ 0.0; - // end else begin - // I(br_sht) <+ V(br_sht)/rth-pterm; - // I(br_sht) <+ ddt(cth*V(br_sht)); - // end - // ******************************************** - - // NQS effect - if(flnqs !=0) begin - I(br_bxf1) <+ Ixf1; - I(br_cxf1) <+ ddt(Qxf1); - I(br_bxf2) <+ Ixf2; - I(br_cxf2) <+ ddt(Qxf2); - - I(br_bxf3) <+ Ixf3; - I(br_cxf3) <+ ddt(Qxf3); - I(br_bxf4) <+ Ixf4; - I(br_cxf4) <+ ddt(Qxf4); - end else begin - I(br_bxf1) <+ V(br_bxf1); - I(br_bxf2) <+ V(br_bxf2); - I(br_bxf3) <+ V(br_bxf3); - I(br_bxf4) <+ V(br_bxf4); - end - -end //of Load_sources - - -`NOISE begin : Noise_sources - - //Thermal noise - fourkt = 4.0 * `P_K * Tdev; - if(rbx >= `MIN_R) begin - I(br_bbp_i) <+ white_noise(fourkt/rbx_t, "thermal"); - end - if(rbi0 >= `MIN_R) begin - I(br_bpbi_i) <+ white_noise(fourkt/rbi, "thermal"); - end - if(rcx >= `MIN_R) begin - I(br_cic_i) <+ white_noise(fourkt/rcx_t, "thermal"); - end - if(re >= `MIN_R) begin - I(br_eie_i) <+ white_noise(fourkt/re_t, "thermal"); - end - if(rsu >= `MIN_R) begin - I(br_sis_i) <+ white_noise(fourkt/rsu, "thermal"); - end - - //Flicker noise : Fully correlated between the perimeter and internal base-node - flicker_Pwr = kf*pow((ibei+ibep),af); - if (cfbe == -1) begin - I(br_biei) <+ flicker_noise(flicker_Pwr,1.0); - end else begin - I(br_bpei) <+ flicker_noise(flicker_Pwr,1.0); - end - - //Shot noise - - twoq = 2.0 * `P_Q; - // I(br_ciei) <+ white_noise(twoq*it, "shot"); - I(br_cibi) <+ white_noise(twoq*iavl, "shot"); - - // I(br_biei) <+ white_noise(twoq*ibei, "shot"); - - I(br_bici) <+ white_noise(twoq*abs(ibci), "shot"); - - I(br_bpei) <+ white_noise(twoq*ibep, "shot"); - - I(br_bpci) <+ white_noise(twoq*abs(ijbcx), "shot"); - - I(br_sici) <+ white_noise(twoq*abs(ijsc), "shot"); - - - - - // Code section for correlated noise - // Please turn-off this code section by "//" in order to run the code with Spectre - - - - I(b_n1) <+ white_noise(2 * `P_Q * ibei, "shot"); - I(b_n1) <+ V(b_n1); - I(b_n2) <+ white_noise(2 * `P_Q * it, "shot"); - I(b_n2) <+ V(b_n2); - - I(bi,ei) <+ V(b_n1); - I(ci,ei) <+ V(b_n2)+ddt((betadc/2)*alit*Tf*alit*Tf*ddt(V(b_n2))); - I(ci,ei) <+ betadc*ddt(-(Tf*alit)*V(b_n1)); - - - - -end //of Noise_sources - -end //analog -endmodule diff --git a/qucs-core/src/components/verilog/hicumL2V2p24.va b/qucs-core/src/components/verilog/hicumL2V2p24.va deleted file mode 100644 index 6c02939873..0000000000 --- a/qucs-core/src/components/verilog/hicumL2V2p24.va +++ /dev/null @@ -1,1642 +0,0 @@ -//HICUM Level_2 Version_2.24: A Verilog-A Description - -//**************New Implementations***************** - -//****************************************************************************** -//This code contains a Verilog-A implementation of Vertical Non-Quasi-Static(NQS) -//Effects using adjunct gyrator networks. To turn on this effect please set FLNQS=1. -//Although Vertical NQS effects have been taken into account in HICUM from the very -//beginning (see original FTN code and built-in v2.1 HICUM model inside most of the -//existing circuit simulators) their implementation has been based on Weil's approach. -//However, using Verilog, it is presently not possible to implement Weil's approach, -//since there does not exist access to previous time-steps of the simulatior. -//The nearly available Verilog-A solution reproduces the results of previous -//HICUM versions (cf. documentation). -//****************************************************************************** - -//****************************************************************************** -// Implementation of noise correlation -// Please turn-off (by front slash //) the noise correlation code section for simulation with Spectre -//****************************************************************************** - -// ***************Bug fix and optimization************* -// 12/09: Elimination of 'ddx' operator for internal capacitance determination -// Capacitances will be calculated by Analytical Equations -// 10/09: Temperature coefficient (ZETAxyz) range modified to [-10:10] -// 09/09: VPT ranges modified from [0:inf] to (0:inf] -// 07/09: DT0H rabge modified from no range to (-inf:inf) -// 03/09: Simplified input NQS adjacent circuit (RC network) -// 04/08: New range has been defined for FDQR0. -// 11/07: Bugs have been fixed in macro HICFCI and HICQFC -// 10/06: in @(initial_model), external if-block for HICTUN_T removed -// 11/06: within HICQFC, minor changes made for LATB<=0.01; -// also HICFCI and HICFCT are changed accordingly -// to ensure correct derivatives -// Upper limit of FGEO parameter was changed to infinity. -// 12/06: expressions for Cdei and Cdci are corrected not to include -// Ccdei and Cbdci respectively (used in Crbi expression). - -// 01/06: FCdf1_dw assigned expression (missing in v2.21) -// FCa and FCa1 are found to have same expression: FCa is omitted in those cases -// FCa1 written instead of FCa in the expression for FCf_ci -// Thermal node "tnode" set as external -// zetasct = mg+1-2.5 changed to zetasct = mg-1.5; -// Code optimization: Temperature dependent parts are moduled in two separate blocks: -// within @(initial_model) when self-heating is OFF -// outside @(initial_model) when self-heating is ON -// 03/06 : Further fix -// vlim_t,ibcis_t,ibcxs_t,itss_t,iscs_t considered in compatibility block -// ddt() operators are separated in contribution expressions. -// FLCOMP parameter is given different values -// 05/06: -// all if-else blocks marked with begin-end -// unused variables deleted -// all series resistors and RTH are allowed to have a minimum value MIN_R -// only tunelling current source contribution within if-then-else -// 06/06: HICRBI deleted and instead the code changed (hyperbolic smoothing in -// conductivity modulation part) and put in relevant portion of the code. -// 07/06: ddx() operator used to find out capacitances from charges: -// QJMODF,QJMOD,HICJQ changed accordingly -// Lateral NQS effect modified with ddx() operator. -// HICFCT included for downward compatibility reason. -// Few macros are taken inside the code: HICICK, HICAVL, HICTUN (more optimized), -// internal base resistance (Qjci included under conductivity modulation, hyperbolic smoothing used) -// Gmin added at (bi,ei) and (bi,ci) branches. -// 08/06: Units added in the parameter descriptions. - -// ********************************************************************************* -// 06/06: Comment on NODE COLLAPSING: -// Presently this verilog code permits a minimum of 1 milli-Ohm resistance for any -// series resistance as well as for thermal resistance RTH. If any of the resistance -// values drops below this minimum value, the corresponding nodes are shorted with -// zero voltage contribution. We want the model compilers/simulators deal this -// situation in such a manner that the corresponding node is COLLAPSED. -// We expect that the simulators should permit current contribution statement -// for any branch with resistance value more than (or equal to) 1 milli-Ohm without -// any convergence problem. In fact, we wish NOT to have to use a voltage contribution -// statement in our Verilog code, except as an indication for the model compiler/simulator -// to interprete a zero branch voltage as NODE-COLLAPSING action. -// ********************************************************************************** - - -//Default simulator: Spectre - -`ifdef insideADMS - `define MODEL @(initial_model) - `define NOISE @(noise) - `define ATTR(txt) (*txt*) -`else - `define MODEL - `define NOISE - `define ATTR(txt) -`endif - - -`define VPT_thresh 1.0e2 -`define Dexp_lim 80.0 -`define Cexp_lim 80.0 -`define DFa_fj 1.921812 -`define RTOLC 1.0e-5 -`define l_itmax 100 -`define TMAX 326.85 -`define TMIN -100.0 -`define LN_EXP_LIMIT 11.0 -`define MIN_R 0.001 -`define Gmin 1.0e-12 -//`define Gmin $simparam("gmin",1e-12) //suggested by L.L - -//ADS -`include "constants.vams" -`include "disciplines.vams" -//`include "compact.vams" - -//Spectre -//`include "constants.h" -//`include "discipline.h" - -//////////////Explicit Capacitance and Charge Expression/////////////// - -// DEPLETION CHARGE CALCULATION -// Hyperbolic smoothing used; no punch-through -// INPUT: -// c_0 : zero-bias capacitance -// u_d : built-in voltage -// z : exponent coefficient -// a_j : control parameter for C peak value at high forward bias -// U_cap : voltage across junction -// IMPLICIT INPUT: -// VT : thermal voltage -// OUTPUT: -// Qz : depletion Charge -// C : depletion capacitance -`define QJMODF(c_0,u_d,z,a_j,U_cap,C,Qz)\ - if(c_0 > 0.0) begin\ - DFV_f = u_d*(1.0-exp(-ln(a_j)/z));\ - DFv_e = (DFV_f-U_cap)/VT;\ - DFs_q = sqrt(DFv_e*DFv_e+`DFa_fj);\ - DFs_q2 = (DFv_e+DFs_q)*0.5;\ - DFv_j = DFV_f-VT*DFs_q2;\ - DFdvj_dv = DFs_q2/DFs_q;\ - DFb = ln(1.0-DFv_j/u_d);\ - DFC_j1 = c_0*exp(-z*DFb)*DFdvj_dv;\ - C = DFC_j1+a_j*c_0*(1.0-DFdvj_dv);\ - DFQ_j = c_0*u_d*(1.0-exp(DFb*(1.0-z)))/(1.0-z);\ - Qz = DFQ_j+a_j*c_0*(U_cap-DFv_j);\ - end else begin\ - C = 0.0;\ - Qz = 0.0;\ - end - -//////////////////////////////////////////////////////////////// - - -//////////////Explicit Capacitance and Charge Expression/////////////// - - -// DEPLETION CHARGE CALCULATION CONSIDERING PUNCH THROUGH -// smoothing of reverse bias region (punch-through) -// and limiting to a_j=Cj,max/Cj0 for forward bias. -// Important for base-collector and collector-substrate junction -// INPUT: -// c_0 : zero-bias capacitance -// u_d : built-in voltage -// z : exponent coefficient -// a_j : control parameter for C peak value at high forward bias -// v_pt : punch-through voltage (defined as qNw^2/2e) -// U_cap : voltage across junction -// IMPLICIT INPUT: -// VT : thermal voltage -// OUTPUT: -// Qz : depletion charge -// C : depletion capacitance -`define QJMOD(c_0,u_d,z,a_j,v_pt,U_cap,C,Qz)\ - if(c_0 > 0.0) begin\ - Dz_r = z/4.0;\ - Dv_p = v_pt-u_d;\ - DV_f = u_d*(1.0-exp(-ln(a_j)/z));\ - DC_max = a_j*c_0;\ - DC_c = c_0*exp((Dz_r-z)*ln(v_pt/u_d));\ - Dv_e = (DV_f-U_cap)/VT;\ - if(Dv_e < `Cexp_lim) begin\ - De = exp(Dv_e);\ - De_1 = De/(1.0+De);\ - Dv_j1 = DV_f-VT*ln(1.0+De);\ - end else begin\ - De_1 = 1.0;\ - Dv_j1 = U_cap;\ - end\ - Da = 0.1*Dv_p+4.0*VT;\ - Dv_r = (Dv_p+Dv_j1)/Da;\ - if(Dv_r < `Cexp_lim) begin\ - De = exp(Dv_r);\ - De_2 = De/(1.0+De);\ - Dv_j2 = -Dv_p+Da*ln(1.0+De);\ - end else begin\ - De_2 = 1.0;\ - Dv_j2 = Dv_j1;\ - end\ - Dv_j4 = U_cap-Dv_j1;\ - DCln1 = ln(1.0-Dv_j1/u_d);\ - DCln2 = ln(1.0-Dv_j2/u_d);\ - Dz1 = 1.0-z;\ - Dzr1 = 1.0-Dz_r;\ - DC_j1 = c_0*exp(DCln2*(-z))*De_1*De_2;\ - DC_j2 = DC_c*exp(DCln1*(-Dz_r))*(1.0-De_2);\ - DC_j3 = DC_max*(1.0-De_1);\ - C = DC_j1+DC_j2+DC_j3;\ - DQ_j1 = c_0*(1.0-exp(DCln2*Dz1))/Dz1;\ - DQ_j2 = DC_c*(1.0-exp(DCln1*Dzr1))/Dzr1;\ - DQ_j3 = DC_c*(1.0-exp(DCln2*Dzr1))/Dzr1;\ - Qz = (DQ_j1+DQ_j2-DQ_j3)*u_d+DC_max*Dv_j4;\ - end else begin\ - C = 0.0;\ - Qz = 0.0;\ - end - - -// DEPLETION CHARGE & CAPACITANCE CALCULATION SELECTOR -// Dependent on junction punch-through voltage -// Important for collector related junctions -`define HICJQ(c_0,u_d,z,v_pt,U_cap,C,Qz)\ - if(v_pt < `VPT_thresh) begin\ - `QJMOD(c_0,u_d,z,2.4,v_pt,U_cap,C,Qz)\ - end else begin\ - `QJMODF(c_0,u_d,z,2.4,U_cap,C,Qz)\ - end - - -// A CALCULATION NEEDED FOR COLLECTOR MINORITY CHARGE FORMULATION -// INPUT: -// zb,zl : zeta_b and zeta_l (model parameters, TED 10/96) -// w : normalized injection width -// OUTPUT: -// hicfcio : function of equation (2.1.17-10) -`define HICFCI(zb,zl,w,hicfcio,dhicfcio_dw)\ - z = zb*w;\ - lnzb = ln(1+zb*w);\ - if(z > 1.0e-6) begin\ - x = 1.0+z;\ - a = x*x;\ - a2 = 0.250*(a*(2.0*lnzb-1.0)+1.0);\ - a3 = (a*x*(3.0*lnzb-1.0)+1.0)/9.0;\ - r = zl/zb;\ - hicfcio = ((1.0-r)*a2+r*a3)/zb;\ - dhicfcio_dw = ((1.0-r)*x+r*a)*lnzb;\ - end else begin\ - a = z*z;\ - a2 = 3.0+z-0.25*a+0.10*z*a;\ - a3 = 2.0*z+0.75*a-0.20*a*z;\ - hicfcio = (zb*a2+zl*a3)*w*w/6.0;\ - dhicfcio_dw = (1+zl*w)*(1+z)*lnzb;\ - end - - -// NEEDED TO CALCULATE WEIGHTED ICCR COLLECTOR MINORITY CHARGE -// INPUT: -// z : zeta_b or zeta_l -// w : normalized injection width -// OUTPUT: -// hicfcto : output -// dhicfcto_dw : derivative of output wrt w -`define HICFCT(z,w,hicfcto,dhicfcto_dw)\ - a = z*w;\ - lnz = ln(1+z*w);\ - if (a > 1.0e-6) begin\ - hicfcto = (a - lnz)/z;\ - dhicfcto_dw = a / (1.0 + a);\ - end else begin\ - hicfcto = 0.5 * a * w;\ - dhicfcto_dw = a;\ - end - - -// COLLECTOR CURRENT SPREADING CALCULATION -// collector minority charge incl. 2D/3D current spreading (TED 10/96) -// INPUT: -// Ix : forward transport current component (itf) -// I_CK : critical current -// FFT_pcS : dependent on fthc and thcs (parameters) -// IMPLICIT INPUT: -// ahc, latl, latb : model parameters -// VT : thermal voltage -// OUTPUT: -// Q_fC, Q_CT: actual and ICCR (weighted) hole charge -// T_fC, T_cT: actual and ICCR (weighted) transit time -// Derivative dfCT_ditf not properly implemented yet -`define HICQFC(Ix,I_CK,FFT_pcS,Q_fC,Q_CT,T_fC,T_cT)\ - Q_fC = FFT_pcS*Ix;\ - FCa = 1.0-I_CK/Ix;\ - FCrt = sqrt(FCa*FCa+ahc);\ - FCa_ck = 1.0-(FCa+FCrt)/(1.0+sqrt(1.0+ahc));\ - FCdaick_ditf = (FCa_ck-1.0)*(1-FCa)/(FCrt*Ix);\ - if(latb > latl) begin\ - FCz = latb-latl;\ - FCxl = 1.0+latl;\ - FCxb = 1.0+latb;\ - if(latb > 0.01) begin\ - FCln = ln(FCxb/FCxl);\ - FCa1 = exp((FCa_ck-1.0)*FCln);\ - FCd_a = 1.0/(latl-FCa1*latb);\ - FCw = (FCa1-1.0)*FCd_a;\ - FCdw_daick = -FCz*FCa1*FCln*FCd_a*FCd_a;\ - FCa1 = ln((1.0+latb*FCw)/(1.0+latl*FCw));\ - FCda1_dw = latb/(1.0+latb*FCw) - latl/(1.0+latl*FCw);\ - end else begin\ - FCf1 = 1.0-FCa_ck;\ - FCd_a = 1.0/(1.0+FCa_ck*latb);\ - FCw = FCf1*FCd_a;\ - FCdw_daick = -1.0*FCd_a*FCd_a*FCxb*FCd_a;\ - FCa1 = FCz*FCw;\ - FCda1_dw = FCz;\ - end\ - FCf_CT = 2.0/FCz;\ - FCw2 = FCw*FCw;\ - FCf1 = latb*latl*FCw*FCw2/3.0+(latb+latl)*FCw2/2.0+FCw;\ - FCdf1_dw = latb*latl*FCw2 + (latb+latl)*FCw + 1.0;\ - `HICFCI(latb,latl,FCw,FCf2,FCdf2_dw)\ - `HICFCI(latl,latb,FCw,FCf3,FCdf3_dw)\ - FCf_ci = FCf_CT*(FCa1*FCf1-FCf2+FCf3);\ - FCdfc_dw = FCf_CT*(FCa1*FCdf1_dw+FCda1_dw*FCf1-FCdf2_dw+FCdf3_dw);\ - FCdw_ditf = FCdw_daick*FCdaick_ditf;\ - FCdfc_ditf = FCdfc_dw*FCdw_ditf;\ - if(flcomp == 0.0 || flcomp == 2.1) begin\ - `HICFCT(latb,FCw,FCf2,FCdf2_dw)\ - `HICFCT(latl,FCw,FCf3,FCdf3_dw)\ - FCf_CT = FCf_CT*(FCf2-FCf3);\ - FCdfCT_dw = FCf_CT*(FCdf2_dw-FCdf3_dw);\ - FCdfCT_ditf = FCdfCT_dw*FCdw_ditf;\ - end else begin\ - FCf_CT = FCf_ci;\ - FCdfCT_ditf = FCdfc_ditf;\ - end\ - end else begin\ - if(latb > 0.01) begin\ - FCd_a = 1.0/(1.0+FCa_ck*latb);\ - FCw = (1.0-FCa_ck)*FCd_a;\ - FCdw_daick = -(1.0+latb)*FCd_a*FCd_a;\ - end else begin\ - FCw = 1.0-FCa_ck-FCa_ck*latb;\ - FCdw_daick = -(1.0+latb);\ - end\ - FCw2 = FCw*FCw;\ - FCz = latb*FCw;\ - FCz_1 = 1.0+FCz;\ - FCd_f = 1.0/(FCz_1);\ - FCf_ci = FCw2*(1.0+FCz/3.0)*FCd_f;\ - FCdfc_dw = 2.0*FCw*(FCz_1+FCz*FCz/3.0)*FCd_f*FCd_f;\ - FCdw_ditf = FCdw_daick*FCdaick_ditf;\ - FCdfc_ditf = FCdfc_dw*FCdw_ditf;\ - if(flcomp == 0.0 || flcomp == 2.1) begin\ - if (FCz > 0.001) begin\ - FCf_CT = 2.0*(FCz_1*ln(FCz_1)-FCz)/(latb*latb*FCz_1);\ - FCdfCT_dw = 2.0*FCw*FCd_f*FCd_f;\ - end else begin\ - FCf_CT = FCw2*(1.0-FCz/3.0)*FCd_f;\ - FCdfCT_dw = 2.0*FCw*(1.0-FCz*FCz/3.0)*FCd_f*FCd_f;\ - end\ - FCdfCT_ditf = FCdfCT_dw*FCdw_ditf;\ - end else begin\ - FCf_CT = FCf_ci;\ - FCdfCT_ditf = FCdfc_ditf;\ - end\ - end\ - Q_CT = Q_fC*FCf_CT;\ - Q_fC = Q_fC*FCf_ci;\ - T_fC = FFT_pcS*(FCf_ci+Ix*FCdfc_ditf);\ - T_cT = FFT_pcS*(FCf_CT+Ix*FCdfCT_ditf); - -// TRANSIT-TIME AND STORED MINORITY CHARGE -// INPUT: -// itf : forward transport current -// I_CK : critical current -// T_f : transit time \ -// Q_f : minority charge / for low current -// IMPLICIT INPUT: -// tef0, gtfe, fthc, thcs, ahc, latl, latb : model parameters -// OUTPUT: -// T_f : transit time \ -// Q_f : minority charge / transient analysis -// T_fT : transit time \ -// Q_fT : minority charge / ICCR (transfer current) -// Q_bf : excess base charge -`define HICQFF(itf,I_CK,T_f,Q_f,T_fT,Q_fT,Q_bf)\ - if(itf < 1.0e-6*I_CK) begin\ - Q_fT = Q_f;\ - T_fT = T_f;\ - end else begin\ - FFa = I_CK/itf;\ - FFd_TfE = tef0_t*exp(-gtfe*ln(FFa));\ - FFd_QfE = FFd_TfE*itf/(gtfe+1.0);\ - FFT_fbS = (1.0-fthc)*thcs_t;\ - FFx = 1.0-FFa;\ - FFs = sqrt(FFx*FFx+ahc);\ - FFw = (FFx+FFs)/(1.0+sqrt(1.0+ahc));\ - FFw_2 = FFw*FFw;\ - FFd_QfB = FFT_fbS*itf*FFw_2;\ - Q_bf = FFd_QfB;\ - FFa_w = FFw_2*(1.0+2.0*FFa/FFs);\ - FFd_TfB = FFT_fbS*FFa_w;\ - FFT_pcS = fthc*thcs_t;\ - if(latb <= 0.0 && latl <= 0.0) begin\ - FFQ_fC = FFT_pcS*itf*FFw_2;\ - FFT_fC = FFT_pcS*FFa_w;\ - FFQ_cT = FFQ_fC;\ - FFT_cT = FFT_fC;\ - end else begin\ - `HICQFC(itf,I_CK,FFT_pcS,FFQ_fC,FFQ_cT,FFT_fC,FFT_cT)\ - end\ - Q_f = Q_f+FFd_QfB;\ - T_f = T_f+FFd_TfB;\ - Q_fT = Q_f+hfe*FFd_QfE+hfc*FFQ_cT;\ - T_fT = T_f+hfe*FFd_TfE+hfc*FFT_cT;\ - Q_f = Q_f+FFd_QfE+FFQ_fC;\ - T_f = T_f+FFd_TfE+FFT_fC;\ - end - - - - -// IDEAL DIODE (WITHOUT CAPACITANCE): -// conductance calculation not required -// INPUT: -// IS, IST : saturation currents (model parameter related) -// UM1 : ideality factor -// U : branch voltage -// IMPLICIT INPUT: -// VT : thermal voltage -// OUTPUT: -// Iz : diode current -`define HICDIO(IS,IST,UM1,U,Iz)\ - DIOY = U/(UM1*VT);\ - if (IS > 0.0) begin\ - if (DIOY > `Dexp_lim) begin\ - le = (1 + (DIOY - `Dexp_lim));\ - DIOY = `Dexp_lim;\ - end else begin\ - le = 1;\ - end\ - le = le*limexp(DIOY);\ - Iz = IST*(le-1.0);\ - if(DIOY <= -14.0) begin\ - Iz = -IST;\ - end\ - end else begin\ - Iz = 0.0;\ - end - - - -// TEMPERATURE UPDATE OF JUNCTION CAPACITANCE RELATED PARAMETERS -// INPUT: -// mostly model parameters -// x : zero bias junction capacitance -// y : junction built-in potencial -// z : grading co-efficient -// w : ratio of maximum to zero-bias value of capacitance or punch-through voltage -// is_al : condition factor to check what "w" stands for -// vgeff : band-gap voltage -// IMPLICIT INPUT: -// VT : thermal voltage -// vt0,qtt0,ln_qtt0,mg : other model variables -// OUTPUT: -// c_j_t : temperature update of "c_j" -// vd_t : temperature update of "vd0" -// w_t : temperature update of "w" -`define TMPHICJ(c_j,vd0,z,w,is_al,vgeff,c_j_t,vd_t,w_t)\ - if (c_j > 0.0) begin\ - vdj0 = 2*vt0*ln(exp(vd0*0.5/vt0)-exp(-0.5*vd0/vt0));\ - vdjt = vdj0*qtt0+vgeff*(1-qtt0)-mg*VT*ln_qtt0;\ - vdt = vdjt+2*VT*ln(0.5*(1+sqrt(1+4*exp(-vdjt/VT))));\ - vd_t = vdt;\ - c_j_t = c_j*exp(z*ln(vd0/vd_t));\ - if (is_al == 1) begin\ - w_t = w*vd_t/vd0;\ - end else begin\ - w_t = w;\ - end\ - end else begin\ - c_j_t = c_j;\ - vd_t = vd0;\ - w_t = w;\ - end - - - -module hicumL2V2p24 (c,b,e,s,tnode); - -//Node definitions - -inout c,b,e,s,tnode; -electrical c,b,e,s,ci,ei,bp,bi,si; -electrical xf1,xf2; -electrical xf; //RC nw - -electrical tnode; -electrical n1,n2; - -//Branch definitions -branch (b,bp) br_bbp_i; -branch (b,bp) br_bbp_v; -branch (ci,c) br_cic_i; -branch (ci,c) br_cic_v; -branch (ei,e) br_eie_i; -branch (ei,e) br_eie_v; -branch (bp,bi) br_bpbi_i; -branch (bp,bi) br_bpbi_v; -branch (si,s) br_sis_i; -branch (si,s) br_sis_v; -branch (bi,ei) br_biei; -branch (bi,ci) br_bici; -branch (ci,bi) br_cibi; -branch (ci,ei) br_ciei; -branch (ei,ci) br_eici; -branch (bp,e) br_bpe; -branch (b,e) br_be; -branch (bp,ei) br_bpei; -branch (bp,ci) br_bpci; -branch (b,ci) br_bci; -branch (si,ci) br_sici; -branch (bp,si) br_bpsi; -branch (tnode ) br_sht; - -//Phase network for ITF -branch (xf1 ) br_bxf1; -branch (xf1 ) br_cxf1; -branch (xf2 ) br_bxf2; -branch (xf2 ) br_cxf2; - -//Phase network for QF - -branch (xf ) br_bxf; //for RC nw -branch (xf ) br_cxf; //for RC nw - -//Noise - -branch (n1 ) b_n1; -branch (n2 ) b_n2; - - - -// -- ########################################################### -// -- ########### Parameters initialization ################ -// -- ########################################################### - - -//Transfer current -parameter real c10 = 2.0E-30 from [0:1] `ATTR(info="GICCR constant" unit="A^2s"); -parameter real qp0 = 2.0E-14 from (0:1] `ATTR(info="Zero-bias hole charge" unit="Coul"); -parameter real ich = 0.0 from [0:inf) `ATTR(info="High-current correction for 2D and 3D effects" unit="A"); //`0' signifies infinity -parameter real hfe = 1.0 from [0:inf] `ATTR(info="Emitter minority charge weighting factor in HBTs"); -parameter real hfc = 1.0 from [0:inf] `ATTR(info="Collector minority charge weighting factor in HBTs"); -parameter real hjei = 1.0 from [0:100] `ATTR(info="B-E depletion charge weighting factor in HBTs"); -parameter real hjci = 1.0 from [0:100] `ATTR(info="B-C depletion charge weighting factor in HBTs"); - -//Base-Emitter diode currents -parameter real ibeis = 1.0E-18 from [0:1] `ATTR(info="Internal B-E saturation current" unit="A"); -parameter real mbei = 1.0 from (0:10] `ATTR(info="Internal B-E current ideality factor"); -parameter real ireis = 0.0 from [0:1] `ATTR(info="Internal B-E recombination saturation current" unit="A"); -parameter real mrei = 2.0 from (0:10] `ATTR(info="Internal B-E recombination current ideality factor"); -parameter real ibeps = 0.0 from [0:1] `ATTR(info="Peripheral B-E saturation current" unit="A"); -parameter real mbep = 1.0 from (0:10] `ATTR(info="Peripheral B-E current ideality factor"); -parameter real ireps = 0.0 from [0:1] `ATTR(info="Peripheral B-E recombination saturation current" unit="A"); -parameter real mrep = 2.0 from (0:10] `ATTR(info="Peripheral B-E recombination current ideality factor"); -parameter real mcf = 1.0 from (0:10] `ATTR(info="Non-ideality factor for III-V HBTs"); - -//Transit time for excess recombination current at b-c barrier -parameter real tbhrec = 0.0 from [0:inf) `ATTR(info="Base current recombination time constant at B-C barrier for high forward injection" unit="s"); - -//Base-Collector diode currents -parameter real ibcis = 1.0E-16 from [0:1.0] `ATTR(info="Internal B-C saturation current" unit="A"); -parameter real mbci = 1.0 from (0:10] `ATTR(info="Internal B-C current ideality factor"); -parameter real ibcxs = 0.0 from [0:1.0] `ATTR(info="External B-C saturation current" unit="A"); -parameter real mbcx = 1.0 from (0:10] `ATTR(info="External B-C current ideality factor"); - -//Base-Emitter tunneling current -parameter real ibets = 0.0 from [0:1] `ATTR(info="B-E tunneling saturation current" unit="A"); -parameter real abet = 40 from [0:inf) `ATTR(info="Exponent factor for tunneling current"); -parameter integer tunode= 1 from [0:1] `ATTR(info="Specifies the base node connection for the tunneling current"); // =1 signifies perimeter node - -//Base-Collector avalanche current -parameter real favl = 0.0 from [0:inf) `ATTR(info="Avalanche current factor" unit="1/V"); -parameter real qavl = 0.0 from [0:inf) `ATTR(info="Exponent factor for avalanche current" unit="Coul"); -parameter real alfav = 0.0 `ATTR(info="Relative TC for FAVL" unit="1/K"); -parameter real alqav = 0.0 `ATTR(info="Relative TC for QAVL" unit="1/K"); - -//Series resistances -parameter real rbi0 = 0.0 from [0:inf) `ATTR(info="Zero bias internal base resistance" unit="Ohm"); -parameter real rbx = 0.0 from [0:inf) `ATTR(info="External base series resistance" unit="Ohm"); -parameter real fgeo = 0.6557 from [0:inf] `ATTR(info="Factor for geometry dependence of emitter current crowding"); -parameter real fdqr0 = 0.0 from [-0.5:100] `ATTR(info="Correction factor for modulation by B-E and B-C space charge layer"); -parameter real fcrbi = 0.0 from [0:1] `ATTR(info="Ratio of HF shunt to total internal capacitance (lateral NQS effect)"); -parameter real fqi = 1.0 from [0:1] `ATTR(info="Ration of internal to total minority charge"); -parameter real re = 0.0 from [0:inf) `ATTR(info="Emitter series resistance" unit="Ohm"); -parameter real rcx = 0.0 from [0:inf) `ATTR(info="External collector series resistance" unit="Ohm"); - -//Substrate transistor -parameter real itss = 0.0 from [0:1.0] `ATTR(info="Substrate transistor transfer saturation current" unit="A"); -parameter real msf = 1.0 from (0:10] `ATTR(info="Forward ideality factor of substrate transfer current"); -parameter real iscs = 0.0 from [0:1.0] `ATTR(info="C-S diode saturation current" unit="A"); -parameter real msc = 1.0 from (0:10] `ATTR(info="Ideality factor of C-S diode current"); -parameter real tsf = 0.0 from [0:inf) `ATTR(info="Transit time for forward operation of substrate transistor" unit="s"); - -//Intra-device substrate coupling -parameter real rsu = 0.0 from [0:inf) `ATTR(info="Substrate series resistance" unit="Ohm"); -parameter real csu = 0.0 from [0:inf) `ATTR(info="Substrate shunt capacitance" unit="F"); - -//Depletion Capacitances -parameter real cjei0 = 1.0E-20 from [0:inf) `ATTR(info="Internal B-E zero-bias depletion capacitance" unit="F"); -parameter real vdei = 0.9 from (0:10] `ATTR(info="Internal B-E built-in potential" unit="V"); -parameter real zei = 0.5 from (0:1] `ATTR(info="Internal B-E grading coefficient"); -parameter real ajei = 2.5 from [1:inf) `ATTR(info="Ratio of maximum to zero-bias value of internal B-E capacitance"); -parameter real cjep0 = 1.0E-20 from [0:inf) `ATTR(info="Peripheral B-E zero-bias depletion capacitance" unit="F"); -parameter real vdep = 0.9 from (0:10] `ATTR(info="Peripheral B-E built-in potential" unit="V"); -parameter real zep = 0.5 from (0:1] `ATTR(info="Peripheral B-E grading coefficient"); -parameter real ajep = 2.5 from [1:inf) `ATTR(info="Ratio of maximum to zero-bias value of peripheral B-E capacitance"); -parameter real cjci0 = 1.0E-20 from [0:inf) `ATTR(info="Internal B-C zero-bias depletion capacitance" unit="F"); -parameter real vdci = 0.7 from (0:10] `ATTR(info="Internal B-C built-in potential" unit="V"); -parameter real zci = 0.4 from (0:1] `ATTR(info="Internal B-C grading coefficient"); -parameter real vptci = 100 from (0:100] `ATTR(info="Internal B-C punch-through voltage" unit="V"); -parameter real cjcx0 = 1.0E-20 from [0:inf) `ATTR(info="External B-C zero-bias depletion capacitance" unit="F"); -parameter real vdcx = 0.7 from (0:10] `ATTR(info="External B-C built-in potential" unit="V"); -parameter real zcx = 0.4 from (0:1] `ATTR(info="External B-C grading coefficient"); -parameter real vptcx = 100 from (0:100] `ATTR(info="External B-C punch-through voltage" unit="V"); -parameter real fbcpar = 0.0 from [0:1] `ATTR(info="Partitioning factor of parasitic B-C cap"); -parameter real fbepar = 1.0 from [0:1] `ATTR(info="Partitioning factor of parasitic B-E cap"); -parameter real cjs0 = 0.0 from [0:inf) `ATTR(info="C-S zero-bias depletion capacitance" unit="F"); -parameter real vds = 0.6 from (0:10] `ATTR(info="C-S built-in potential" unit="V"); -parameter real zs = 0.5 from (0:1] `ATTR(info="C-S grading coefficient"); -parameter real vpts = 100 from (0:100] `ATTR(info="C-S punch-through voltage" unit="V"); - -//Diffusion Capacitances -parameter real t0 = 0.0 from [0:inf) `ATTR(info="Low current forward transit time at VBC=0V" unit="s"); -parameter real dt0h = 0.0 from (-inf:inf) `ATTR(info="Time constant for base and B-C space charge layer width modulation" unit="s"); -parameter real tbvl = 0.0 from [0:inf) `ATTR(info="Time constant for modelling carrier jam at low VCE" unit="s"); -parameter real tef0 = 0.0 from [0:inf) `ATTR(info="Neutral emitter storage time" unit="s"); -parameter real gtfe = 1.0 from (0:10] `ATTR(info="Exponent factor for current dependence of neutral emitter storage time"); -parameter real thcs = 0.0 from [0:inf) `ATTR(info="Saturation time constant at high current densities" unit="s"); -parameter real ahc = 0.1 from (0:10] `ATTR(info="Smoothing factor for current dependence of base and collector transit time"); -parameter real fthc = 0.0 from [0:1] `ATTR(info="Partitioning factor for base and collector portion"); -parameter real rci0 = 150 from (0:inf) `ATTR(info="Internal collector resistance at low electric field" unit="Ohm"); -parameter real vlim = 0.5 from (0:10] `ATTR(info="Voltage separating ohmic and saturation velocity regime" unit="V"); -parameter real vces = 0.1 from [0:1] `ATTR(info="Internal C-E saturation voltage" unit="V"); -parameter real vpt = 100.0 from (0:inf] `ATTR(info="Collector punch-through voltage" unit="V"); // `0' signifies infinity -parameter real tr = 0.0 from [0:inf) `ATTR(info="Storage time for inverse operation" unit="s"); - -//Isolation Capacitances -parameter real cbepar = 0.0 from [0:inf) `ATTR(info="Total parasitic B-E capacitance" unit="F"); -parameter real cbcpar = 0.0 from [0:inf) `ATTR(info="Total parasitic B-C capacitance" unit="F"); - -//Non-quasi-static Effect -parameter real alqf = 0.0 from [0:1] `ATTR(info="Factor for additional delay time of minority charge"); -parameter real alit = 0.0 from [0:1] `ATTR(info="Factor for additional delay time of transfer current"); -parameter integer flnqs = 0 from [0:1] `ATTR(info="Flag for turning on and off of vertical NQS effect"); - -//Noise -parameter real kf = 0.0 from [0:inf) `ATTR(info="Flicker noise coefficient"); -parameter real af = 2.0 from (0:10] `ATTR(info="Flicker noise exponent factor"); -parameter integer cfbe = -1 from [-2:-1] `ATTR(info="Flag for determining where to tag the flicker noise source"); - - -//Lateral Geometry Scaling (at high current densities) -parameter real latb = 0.0 from [0:inf) `ATTR(info="Scaling factor for collector minority charge in direction of emitter width"); -parameter real latl = 0.0 from [0:inf) `ATTR(info="Scaling factor for collector minority charge in direction of emitter length"); - -//Temperature dependence -parameter real vgb = 1.17 from (0:10] `ATTR(info="Bandgap voltage extrapolated to 0 K" unit="V"); -parameter real alt0 = 0.0 `ATTR(info="First order relative TC of parameter T0" unit="1/K"); -parameter real kt0 = 0.0 `ATTR(info="Second order relative TC of parameter T0"); -parameter real zetaci = 0.0 from [-10:10] `ATTR(info="Temperature exponent for RCI0"); -parameter real alvs = 0.0 `ATTR(info="Relative TC of saturation drift velocity" unit="1/K"); -parameter real alces = 0.0 `ATTR(info="Relative TC of VCES" unit="1/K"); -parameter real zetarbi = 0.0 from [-10:10] `ATTR(info="Temperature exponent of internal base resistance"); -parameter real zetarbx = 0.0 from [-10:10] `ATTR(info="Temperature exponent of external base resistance"); -parameter real zetarcx = 0.0 from [-10:10] `ATTR(info="Temperature exponent of external collector resistance"); -parameter real zetare = 0.0 from [-10:10] `ATTR(info="Temperature exponent of emitter resistance"); -parameter real zetacx = 1.0 from [-10:10] `ATTR(info="Temperature exponent of mobility in substrate transistor transit time"); -parameter real vge = 1.17 from (0:10] `ATTR(info="Effective emitter bandgap voltage" unit="V"); -parameter real vgc = 1.17 from (0:10] `ATTR(info="Effective collector bandgap voltage" unit="V"); -parameter real vgs = 1.17 from (0:10] `ATTR(info="Effective substrate bandgap voltage" unit="V"); -parameter real f1vg =-1.02377e-4 `ATTR(info="Coefficient K1 in T-dependent band-gap equation"); -parameter real f2vg = 4.3215e-4 `ATTR(info="Coefficient K2 in T-dependent band-gap equation"); -parameter real zetact = 3.0 from [-10:10] `ATTR(info="Exponent coefficient in transfer current temperature dependence"); -parameter real zetabet = 3.5 from [-10:10] `ATTR(info="Exponent coefficient in B-E junction current temperature dependence"); -parameter real alb = 0.0 `ATTR(info="Relative TC of forward current gain for V2.1 model" unit="1/K"); - -//Self-Heating -parameter integer flsh = 0 from [0:2] `ATTR(info="Flag for turning on and off self-heating effect"); -parameter real rth = 0.0 from [0:inf) `ATTR(info="Thermal resistance" unit="K/W"); -parameter real cth = 0.0 from [0:inf) `ATTR(info="Thermal capacitance" unit="J/W"); - -//Compatibility with V2.1 -parameter real flcomp = 0.0 from [0:inf) `ATTR(info="Flag for compatibility with v2.1 model (0=v2.1)"); - -//Circuit simulator specific parameters -parameter real tnom = 27.0 `ATTR(info="Temperature at which parameters are specified" unit="C"); -parameter real dt = 0.0 `ATTR(info="Temperature change w.r.t. chip temperature for particular transistor" unit="K"); - - -// -//======================== Transistor model formulation =================== -// - - //Declaration of variables - - //Temperature and drift - real VT,Tdev,qtt0,ln_qtt0,r_VgVT,V_gT,dT,k; - real ireis_t,ibeis_t,ibcxs_t,ibcis_t,iscs_t,cjci0_t; - real cjs0_t,rci0_t,vlim_t,vces_t,thcs_t,tef0_t,rbi0_t; - real rbx_t,rcx_t,re_t,t0_t,vdei_t,vdci_t,vpts_t,itss_t,tsf_t; - real c10_t,cjei0_t,qp0_t,vdcx_t,vptcx_t,cjcx01_t,cjcx02_t; - real qjcx0_t_i,qjcx0_t_ii,cratio_t,c_dummy; - real ibeps_t,ireps_t,cjep0_t; - real ajei_t,qavl_t,favl_t,ibets_t,abet_t,vptci_t,vdep_t,ajep_t,zetatef; - real k1,k2,dvg0,vge_t,vgb_t,vgbe_t,vds_t,vt0,Tnom,Tamb,a,avs; - real zetabci,zetabcxt,zetasct,vgbe0,mg,vgb_t0,vge_t0,vgbe_t0,vgbc0,vgsc0; - real cbcpar1,cbcpar2,cbepar2,cbepar1,Oich,Ovpt,Otbhrec; - - //Charges, capacitances and currents - real Qjci,Qjei,Qjep; - real it,ibei,irei,ibci,ibep,irep,ibh_rec; - real Qdei,Qdci,qrbi; - real ibet,iavl; - real ijbcx,ijsc,Qjs,HSUM,HSI_Tsu,Qdsu; - - //Base resistance and self-heating power - real rbi,pterm; - - //Variables for macro TMPHICJ - real vdj0,vdjt,vdt; - - //Model initialization - real k10,k20,C_1; - - //Model evaluation - real Cjci,Cjcit,cc,Cjei,Cjep; - real itf,itr,Tf,Tr,VT_f,i_0f,i_0r,a_bpt,Q_0,Q_p,Q_bpt; - real Orci0_t,b_q,Q_fC,T_fC,T_cT,I_Tf1,T_f0,Q_fT,T_fT,Q_bf; - real ICKa,d1; - real A,a_h,Q_pT,d_Q,d_Q0; - real Qf,Cdei,Qr,Cdci,Crbi; - real ick,vc,vceff,cjcx01,cjcx02,HSa,HSb; - integer l_it; - - //Variables for macros - real DIOY,le;//HICDIO - real FFT_fbS,FFa,FFx,FFs,FFw,FFw_2,FFd_QfB,FFd_TfB,FFT_pcS,FFQ_fC,FFT_fC,FFQ_cT,FFT_cT,FFd_TfE,FFd_QfE,FFa_w;//HICQFF - real FCz,FCw2,FCf1,FCf2,FCf3,FCf_ci,FCz_1,FCa1,FCa_ck,FCxl,FCxb;//HICQFC - real FCd_a,FCdaick_ditf,FCa,FCw,FCdw_daick,FCdfc_dw,FCdw_ditf,FCdfc_ditf,FCf_CT,FCdfCT_ditf,FCrt,FCln,lnz,FCda1_dw,FCdf1_dw,FCdf2_dw,FCdf3_dw,FCd_f,FCdfCT_dw;//HICQFC - real Dz_r,Dv_p,DV_f,DC_max,DC_c,Da,Dv_e,De,De_1,Dv_j1,Dv_r,De_2,Dv_j2,Dv_j4,DQ_j1,DQ_j2,DQ_j3,DCln1,DCln2,Dz1,Dzr1,DC_j1,DC_j2,DC_j3;//QJMOD - real DFV_f,DFv_e,DFv_j,DFb,DFQ_j,DFs_q,DFs_q2,DFdvj_dv,DFC_j1;//QJMODF - real z,a2,a3,r,x;//HICFCI - real zb,zl,lnzb,w,hicfcio,dhicfcio_dw; //HICFCT - - //Noise - real fourkt,twoq,flicker_Pwr; - real thermal_Rbx,thermal_Rbi,thermal_Rcx,thermal_Re,betad,betan,betadin,betadc,icn,icn1,icn2; - - //NQS - real Ixf1,Ixf2,Qxf1,Qxf2,Vxf1,Vxf2,Itxf,TD1,Qdeix; - real T, Vxf, Ixf, Qxf,fact; - - //end of variables - -analog begin - -`MODEL begin : Model_initialization - - Tnom = tnom+`P_CELSIUS0; - Tamb = $temperature; - vt0 = `P_K*Tnom /`P_Q; - k10 = f1vg*Tnom*ln(Tnom); - k20 = f2vg*Tnom; - avs = alvs*Tnom; - vgb_t0 = vgb+k10+k20; - vge_t0 = vge+k10+k20; - vgbe_t0 = (vgb_t0+vge_t0)/2; - vgbe0 = (vgb+vge)/2; - vgbc0 = (vgb+vgc)/2; - vgsc0 = (vgs+vgc)/2; - mg = 3-`P_Q*f1vg/`P_K; - zetabci = mg+1-zetaci; - zetabcxt= mg+1-zetacx; - zetasct = mg-1.5; - - //Depletion capacitance splitting at b-c junction - //Capacitances at peripheral and external base node - C_1 = (1.0-fbcpar)*(cjcx0+cbcpar); - if (C_1 >= cbcpar) begin - cbcpar1 = cbcpar; - cbcpar2 = 0.0; - cjcx01 = C_1-cbcpar; - cjcx02 = cjcx0-cjcx01; - end else begin - cbcpar1 = C_1; - cbcpar2 = cbcpar-cbcpar1; - cjcx01 = 0.0; - cjcx02 = cjcx0; - end - - //Parasitic b-e capacitance partitioning: No temperature dependence - cbepar2 = fbepar*cbepar; - cbepar1 = cbepar-cbepar2; - - //Avoid devide-by-zero and define infinity other way - //High current correction for 2D and 3D effects - if (ich != 0.0) begin - Oich = 1.0/ich; - end else begin - Oich = 0.0; - end - - //Base current recombination time constant at b-c barrier - if (tbhrec != 0.0) begin - Otbhrec = 1.0/tbhrec; - end else begin - Otbhrec = 0.0; - end - - // Temperature and resulting parameter drift - if (flsh==0 || rth < `MIN_R) begin : Thermal_updat_without_self_heating - Tdev = Tamb+dt; - if(Tdev < `TMIN + 273.15) begin - Tdev = `TMIN + 273.15; - end else begin - if (Tdev > `TMAX + 273.15) begin - Tdev = `TMAX + 273.15; - end - end - VT = `P_K*Tdev /`P_Q; - dT = Tdev-Tnom; - qtt0 = Tdev/Tnom; - ln_qtt0 = ln(qtt0); - k1 = f1vg*Tdev*ln(Tdev); - k2 = f2vg*Tdev; - vgb_t = vgb+k1+k2; - vge_t = vge+k1+k2; - vgbe_t = (vgb_t+vge_t)/2; - - //Internal b-e junction capacitance - `TMPHICJ(cjei0,vdei,zei,ajei,1,vgbe0,cjei0_t,vdei_t,ajei_t) - - if (flcomp == 0.0 || flcomp == 2.1) begin - V_gT = 3.0*VT*ln_qtt0 + vgb*(qtt0-1.0); - r_VgVT = V_gT/VT; - //Internal b-e diode saturation currents - a = mcf*r_VgVT/mbei - alb*dT; - ibeis_t = ibeis*exp(a); - a = mcf*r_VgVT/mrei - alb*dT; - ireis_t = ireis*exp(a); - a = mcf*r_VgVT/mbep - alb*dT; - //Peripheral b-e diode saturation currents - ibeps_t = ibeps*exp(a); - a = mcf*r_VgVT/mrep - alb*dT; - ireps_t = ireps*exp(a); - //Internal b-c diode saturation current - a = r_VgVT/mbci; - ibcis_t = ibcis*exp(a); - //External b-c diode saturation currents - a = r_VgVT/mbcx; - ibcxs_t = ibcxs*exp(a); - //Saturation transfer current for substrate transistor - a = r_VgVT/msf; - itss_t = itss*exp(a); - //Saturation current for c-s diode - a = r_VgVT/msc; - iscs_t = iscs*exp(a); - //Zero bias hole charge - a = vdei_t/vdei; - qp0_t = qp0*(1.0+0.5*zei*(1.0-a)); - //Voltage separating ohmic and saturation velocity regime - a = vlim*(1.0-alvs*dT)*exp(zetaci*ln_qtt0); - k = (a-VT)/VT; - if (k < `LN_EXP_LIMIT) begin - vlim_t = VT + VT*ln(1.0+exp(k)); - end else begin - vlim_t = a; - end - //Neutral emitter storage time - a = 1.0+alb*dT; - k = 0.5*(a+sqrt(a*a+0.01)); - tef0_t = tef0*qtt0/k; - end else begin - //Internal b-e diode saturation currents - ibeis_t = ibeis*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); - ireis_t = ireis*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1)); - //Peripheral b-e diode saturation currents - ibeps_t = ibeps*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); - ireps_t = ireps*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1)); - //Internal b-c diode saturation currents - ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); - //External b-c diode saturation currents - ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1)); - //Saturation transfer current for substrate transistor - itss_t = itss*exp(zetasct*ln_qtt0+vgc/VT*(qtt0-1)); - //Saturation current for c-s diode - iscs_t = iscs*exp(zetasct*ln_qtt0+vgs/VT*(qtt0-1)); - //Zero bias hole charge - a = exp(zei*ln(vdei_t/vdei)); - qp0_t = qp0*(2.0-a); - //Voltage separating ohmic and saturation velocity regime - vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); - //Neutral emitter storage time - zetatef = zetabet-zetact-0.5; - dvg0 = vgb-vge; - tef0_t = tef0*exp(zetatef*ln_qtt0-dvg0/VT*(qtt0-1)); - end - - //GICCR prefactor - c10_t = c10*exp(zetact*ln_qtt0+vgb/VT*(qtt0-1)); - - // Low-field internal collector resistance - rci0_t = rci0*exp(zetaci*ln_qtt0); - - //Voltage separating ohmic and saturation velocity regime - //vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); - - //Internal c-e saturation voltage - vces_t = vces*(1+alces*dT); - - - //Internal b-c diode saturation current - //ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); - - //Internal b-c junction capacitance - `TMPHICJ(cjci0,vdci,zci,vptci,0,vgbc0,cjci0_t,vdci_t,vptci_t) - - //Low-current forward transit time - t0_t = t0*(1+alt0*dT+kt0*dT*dT); - - //Saturation time constant at high current densities - thcs_t = thcs*exp((zetaci-1)*ln_qtt0); - - - //Avalanche caurrent factors - favl_t = favl*exp(alfav*dT); - qavl_t = qavl*exp(alqav*dT); - - //Zero bias internal base resistance - rbi0_t = rbi0*exp(zetarbi*ln_qtt0); - - - //Peripheral b-e junction capacitance - `TMPHICJ(cjep0,vdep,zep,ajep,1,vgbe0,cjep0_t,vdep_t,ajep_t) - - //Tunneling current factors - begin : HICTUN_T - real a_eg,ab,aa; - ab = 1.0; - aa = 1.0; - a_eg=vgbe_t0/vgbe_t; - if(tunode==1 && cjep0 > 0.0 && vdep >0.0) begin - ab = (cjep0_t/cjep0)*sqrt(a_eg)*vdep_t*vdep_t/(vdep*vdep); - aa = (vdep/vdep_t)*(cjep0/cjep0_t)*pow(a_eg,-1.5); - end else if (tunode==0 && cjei0 > 0.0 && vdei >0.0) begin - ab = (cjei0_t/cjei0)*sqrt(a_eg)*vdei_t*vdei_t/(vdei*vdei); - aa = (vdei/vdei_t)*(cjei0/cjei0_t)*pow(a_eg,-1.5); - end - ibets_t = ibets*ab; - abet_t = abet*aa; - end - - - //Temperature mapping for tunneling current is done inside HICTUN - - `TMPHICJ(1.0,vdcx,zcx,vptcx,0,vgbc0,cratio_t,vdcx_t,vptcx_t) - cjcx01_t=cratio_t*cjcx01; - cjcx02_t=cratio_t*cjcx02; - - - //External b-c diode saturation currents - //ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1)); - - - //Constant external series resistances - rcx_t = rcx*exp(zetarcx*ln_qtt0); - rbx_t = rbx*exp(zetarbx*ln_qtt0); - re_t = re*exp(zetare*ln_qtt0); - - //Forward transit time in substrate transistor - tsf_t = tsf*exp((zetacx-1.0)*ln_qtt0); - - //Capacitance for c-s junction - `TMPHICJ(cjs0,vds,zs,vpts,0,vgsc0,cjs0_t,vds_t,vpts_t) - - end // of Thermal_update_without_self_heating - -end //of Model_initialization - -if (flsh!=0 && rth >= `MIN_R) begin : Thermal_update_with_self_heating - Tdev = Tamb+dt+V(br_sht); - // Limit temperature to avoid FPEs in equations - if(Tdev < `TMIN + 273.15) begin - Tdev = `TMIN + 273.15; - end else begin - if (Tdev > `TMAX + 273.15) begin - Tdev = `TMAX + 273.15; - end - end - VT = `P_K*Tdev /`P_Q; - dT = Tdev-Tnom; - qtt0 = Tdev/Tnom; - ln_qtt0 = ln(qtt0); - k1 = f1vg*Tdev*ln(Tdev); - k2 = f2vg*Tdev; - vgb_t = vgb+k1+k2; - vge_t = vge+k1+k2; - vgbe_t = (vgb_t+vge_t)/2; - - //Internal b-e junction capacitance - `TMPHICJ(cjei0,vdei,zei,ajei,1,vgbe0,cjei0_t,vdei_t,ajei_t) - - if (flcomp == 0.0 || flcomp == 2.1) begin - V_gT = 3.0*VT*ln_qtt0 + vgb*(qtt0-1.0); - r_VgVT = V_gT/VT; - //Internal b-e diode saturation currents - a = mcf*r_VgVT/mbei - alb*dT; - ibeis_t = ibeis*exp(a); - a = mcf*r_VgVT/mrei - alb*dT; - ireis_t = ireis*exp(a); - a = mcf*r_VgVT/mbep - alb*dT; - //Peripheral b-e diode saturation currents - ibeps_t = ibeps*exp(a); - a = mcf*r_VgVT/mrep - alb*dT; - ireps_t = ireps*exp(a); - //Internal b-c diode saturation current - a = r_VgVT/mbci; - ibcis_t = ibcis*exp(a); - //External b-c diode saturation currents - a = r_VgVT/mbcx; - ibcxs_t = ibcxs*exp(a); - //Saturation transfer current for substrate transistor - a = r_VgVT/msf; - itss_t = itss*exp(a); - //Saturation current for c-s diode - a = r_VgVT/msc; - iscs_t = iscs*exp(a); - //Zero bias hole charge - a = vdei_t/vdei; - qp0_t = qp0*(1.0+0.5*zei*(1.0-a)); - //Voltage separating ohmic and saturation velocity regime - a = vlim*(1.0-alvs*dT)*exp(zetaci*ln_qtt0); - k = (a-VT)/VT; - if (k < `LN_EXP_LIMIT) begin - vlim_t = VT + VT*ln(1.0+exp(k)); - end else begin - vlim_t = a; - end - //Neutral emitter storage time - a = 1.0+alb*dT; - k = 0.5*(a+sqrt(a*a+0.01)); - tef0_t = tef0*qtt0/k; - end else begin - //Internal b-e diode saturation currents - ibeis_t = ibeis*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); - ireis_t = ireis*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1)); - //Peripheral b-e diode saturation currents - ibeps_t = ibeps*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); - ireps_t = ireps*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1)); - //Internal b-c diode saturation currents - ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); - //External b-c diode saturation currents - ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1)); - //Saturation transfer current for substrate transistor - itss_t = itss*exp(zetasct*ln_qtt0+vgc/VT*(qtt0-1)); - //Saturation current for c-s diode - iscs_t = iscs*exp(zetasct*ln_qtt0+vgs/VT*(qtt0-1)); - //Zero bias hole charge - a = exp(zei*ln(vdei_t/vdei)); - qp0_t = qp0*(2.0-a); - //Voltage separating ohmic and saturation velocity regime - vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); - //Neutral emitter storage time - zetatef = zetabet-zetact-0.5; - dvg0 = vgb-vge; - tef0_t = tef0*exp(zetatef*ln_qtt0-dvg0/VT*(qtt0-1)); - end - - //GICCR prefactor - c10_t = c10*exp(zetact*ln_qtt0+vgb/VT*(qtt0-1)); - - // Low-field internal collector resistance - rci0_t = rci0*exp(zetaci*ln_qtt0); - - //Voltage separating ohmic and saturation velocity regime - //vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); - - //Internal c-e saturation voltage - vces_t = vces*(1+alces*dT); - - - //Internal b-c diode saturation current - //ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); - - //Internal b-c junction capacitance - `TMPHICJ(cjci0,vdci,zci,vptci,0,vgbc0,cjci0_t,vdci_t,vptci_t) - - //Low-current forward transit time - t0_t = t0*(1+alt0*dT+kt0*dT*dT); - - //Saturation time constant at high current densities - thcs_t = thcs*exp((zetaci-1)*ln_qtt0); - - - //Avalanche caurrent factors - favl_t = favl*exp(alfav*dT); - qavl_t = qavl*exp(alqav*dT); - - //Zero bias internal base resistance - rbi0_t = rbi0*exp(zetarbi*ln_qtt0); - - - //Peripheral b-e junction capacitance - `TMPHICJ(cjep0,vdep,zep,ajep,1,vgbe0,cjep0_t,vdep_t,ajep_t) - - //Tunneling current factors - if (V(br_bpei) < 0.0 || V(br_biei) < 0.0) begin : HICTUN_T - real a_eg,ab,aa; - ab = 1.0; - aa = 1.0; - a_eg=vgbe_t0/vgbe_t; - if(tunode==1 && cjep0 > 0.0 && vdep >0.0) begin - ab = (cjep0_t/cjep0)*sqrt(a_eg)*vdep_t*vdep_t/(vdep*vdep); - aa = (vdep/vdep_t)*(cjep0/cjep0_t)*pow(a_eg,-1.5); - end else if (tunode==0 && cjei0 > 0.0 && vdei >0.0) begin - ab = (cjei0_t/cjei0)*sqrt(a_eg)*vdei_t*vdei_t/(vdei*vdei); - aa = (vdei/vdei_t)*(cjei0/cjei0_t)*pow(a_eg,-1.5); - end - ibets_t = ibets*ab; - abet_t = abet*aa; - end - - - //Temperature mapping for tunneling current is done inside HICTUN - - `TMPHICJ(1.0,vdcx,zcx,vptcx,0,vgbc0,cratio_t,vdcx_t,vptcx_t) - cjcx01_t=cratio_t*cjcx01; - cjcx02_t=cratio_t*cjcx02; - - - //External b-c diode saturation currents - //ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1)); - - - //Constant external series resistances - rcx_t = rcx*exp(zetarcx*ln_qtt0); - rbx_t = rbx*exp(zetarbx*ln_qtt0); - re_t = re*exp(zetare*ln_qtt0); - - //Forward transit time in substrate transistor - tsf_t = tsf*exp((zetacx-1.0)*ln_qtt0); - - //Capacitance for c-s junction - `TMPHICJ(cjs0,vds,zs,vpts,0,vgsc0,cjs0_t,vds_t,vpts_t) - -end //of Thermal_update_with_self_heating - - -begin : Model_evaluation - - //Intrinsic transistor - //Internal base currents across b-e junction - `HICDIO(ibeis,ibeis_t,mbei,V(br_biei),ibei) - `HICDIO(ireis,ireis_t,mrei,V(br_biei),irei) - - //HICCR: begin - - //Inverse of low-field internal collector resistance: needed in HICICK - Orci0_t = 1.0/rci0_t; - - //Initialization - //Transfer current, minority charges and transit times - - Tr = tr; - VT_f = mcf*VT; - i_0f = c10_t * limexp(V(br_biei)/VT_f); - i_0r = c10_t * limexp(V(br_bici)/VT); - - //Internal b-e and b-c junction capacitances and charges - //`QJMODF(cjei0_t,vdei_t,zei,ajei_t,V(br_biei),Qjei) - //Cjei = ddx(Qjei,V(bi)); - `QJMODF(cjei0_t,vdei_t,zei,ajei_t,V(br_biei),Cjei,Qjei) - - //`HICJQ(cjci0_t,vdci_t,zci,vptci_t,V(br_bici),Qjci) - //Cjci = ddx(Qjci,V(bi)); - `HICJQ(cjci0_t,vdci_t,zci,vptci_t,V(br_bici),Cjci,Qjci) - - //Hole charge at low bias - a_bpt = 0.05; - Q_0 = qp0_t + hjei*Qjei + hjci*Qjci; - Q_bpt = a_bpt*qp0_t; - b_q = Q_0/Q_bpt-1; - Q_0 = Q_bpt*(1+(b_q +sqrt(b_q*b_q+1.921812))/2); - - //Transit time calculation at low current density - if(cjci0_t > 0.0) begin : CJMODF - real cV_f,cv_e,cs_q,cs_q2,cv_j,cdvj_dv; - cV_f = vdci_t*(1.0-exp(-ln(2.4)/zci)); - cv_e = (cV_f-V(br_bici))/VT; - cs_q = sqrt(cv_e*cv_e+1.921812); - cs_q2 = (cv_e+cs_q)*0.5; - cv_j = cV_f-VT*cs_q2; - cdvj_dv = cs_q2/cs_q; - Cjcit = cjci0_t*exp(-zci*ln(1.0-cv_j/vdci_t))*cdvj_dv+2.4*cjci0_t*(1.0-cdvj_dv); - end else begin - Cjcit = 0.0; - end - if(Cjcit > 0.0) begin - cc = cjci0_t/Cjcit; - end else begin - cc = 1.0; - end - T_f0 = t0_t+dt0h*(cc-1.0)+tbvl*(1/cc-1.0); - - //Effective collector voltage - vc = V(br_ciei)-vces_t; - - //Critical current for onset of high-current effects - begin : HICICK - Ovpt = 1.0/vpt; - a = vc/VT; - d1 = a-1; - vceff = (1.0+((d1+sqrt(d1*d1+1.921812))/2))*VT; - a = vceff/vlim_t; - ick = vceff*Orci0_t/sqrt(1.0+a*a); - ICKa = (vceff-vlim_t)*Ovpt; - ick = ick*(1.0+0.5*(ICKa+sqrt(ICKa*ICKa+1.0e-3))); - end - - //Initial formulation of forward and reverse component of transfer current - Q_p = Q_0; - if (T_f0 > 0.0 || Tr > 0.0) begin - A = 0.5*Q_0; - Q_p = A+sqrt(A*A+T_f0*i_0f+Tr*i_0r); - end - I_Tf1 =i_0f/Q_p; - a_h = Oich*I_Tf1; - itf = I_Tf1*(1.0+a_h); - itr = i_0r/Q_p; - - //Initial formulation of forward transit time, diffusion, GICCR and excess b-c charge - Q_bf = 0.0; - Tf = T_f0; - Qf = T_f0*itf; - `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf) - - //Initial formulation of reverse diffusion charge - Qr = Tr*itr; - - //Preparation for iteration to get total hole charge and related variables - l_it = 0; - if(Qf > `RTOLC*Q_p || a_h > `RTOLC) begin - //Iteration for Q_pT is required for improved initial solution - Qf = sqrt(T_f0*itf*Q_fT); - Q_pT = Q_0+Qf+Qr; - d_Q = Q_pT; - while (abs(d_Q) >= `RTOLC*abs(Q_pT) && l_it <= `l_itmax) begin - d_Q0 = d_Q; - I_Tf1 = i_0f/Q_pT; - a_h = Oich*I_Tf1; - itf = I_Tf1*(1.0+a_h); - itr = i_0r/Q_pT; - Tf = T_f0; - Qf = T_f0*itf; - `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf) - Qr = Tr*itr; - if(Oich == 0.0) begin - a = 1.0+(T_fT*itf+Qr)/Q_pT; - end else begin - a = 1.0+(T_fT*I_Tf1*(1.0+2.0*a_h)+Qr)/Q_pT; - end - d_Q = -(Q_pT-(Q_0+Q_fT+Qr))/a; - //Limit maximum change of Q_pT - a = abs(0.3*Q_pT); - if(abs(d_Q) > a) begin - if (d_Q>=0) begin - d_Q = a; - end else begin - d_Q = -a; - end - end - Q_pT = Q_pT+d_Q; - l_it = l_it+1; - end //while - - I_Tf1 = i_0f/Q_pT; - a_h = Oich*I_Tf1; - itf = I_Tf1*(1.0+a_h); - itr = i_0r/Q_pT; - - //Final transit times, charges and transport current components - Tf = T_f0; - Qf = T_f0*itf; - `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf) - Qr = Tr*itr; - - end //if - - //NQS effect implemented with LCR networks - //Once the delay in ITF is considered, IT_NQS is calculated afterwards - - it = itf-itr; - - //Diffusion charges for further use - Qdei = Qf; - Qdci = Qr; - - - //High-frequency emitter current crowding (lateral NQS) - // Cdei = -1*ddx(Qdei,V(ei)); - // Cdci = -1*ddx(Qdci,V(ci)); - // Crbi = fcrbi*(Cjei+Cjci+Cdei+Cdci); - // qrbi = Crbi*V(br_bpbi_v); - - qrbi = fcrbi*(Qjei+Qjci+Qdei+Qdci); - - //HICCR: end - - //Internal base current across b-c junction - `HICDIO(ibcis,ibcis_t,mbci,V(br_bici),ibci) - - //Avalanche current - if((V(br_bici) < 0.0) && (favl_t > 0.0) && (cjci0_t > 0.0)) begin : HICAVL - real v_bord,v_q,U0,av,avl,S_avl; - v_bord = vdci_t-V(br_bici); - v_q = qavl_t/Cjci; - U0 = qavl_t/cjci0_t; - if(v_bord > U0) begin - av = favl_t*exp(-v_q/U0); - avl = av*(U0+(1.0+v_q/U0)*(v_bord-U0)); - end else begin - avl = favl_t*v_bord*exp(-v_q/v_bord); - end - iavl = itf*avl; - end else begin - iavl = 0.0; - end - - //Excess base current from recombination at the b-c barrier - ibh_rec = Q_bf*Otbhrec; - - //Internal base resistance - if(rbi0_t > 0.0) begin : HICRBI - real Qz_nom,f_QR,f_p,ETA,Qz0,fQz; - // Consideration of conductivity modulation - // To avoid convergence problem hyperbolic smoothing used - f_QR = (1+fdqr0)*qp0_t; - Qz0 = Qjei+Qjci+Qf; - Qz_nom = 1+Qz0/f_QR; - fQz = 0.5*(Qz_nom+sqrt(Qz_nom*Qz_nom+0.01)); - rbi = rbi0_t/fQz; - // Consideration of emitter current crowding - if( ibei > 0.0) begin - ETA = rbi*ibei*fgeo/VT; - if(ETA < 1.0e-6) begin - rbi = rbi*(1.0-0.5*ETA); - end else begin - rbi = rbi*ln(1.0+ETA)/ETA; - end - end - // Consideration of peripheral charge - if(Qf > 0.0) begin - rbi = rbi*(Qjei+Qf*fqi)/(Qjei+Qf); - end - end else begin - rbi = 0.0; - end - - //Base currents across peripheral b-e junction - `HICDIO(ibeps,ibeps_t,mbep,V(br_bpei),ibep) - `HICDIO(ireps,ireps_t,mrep,V(br_bpei),irep) - - //Peripheral b-e junction capacitance and charge - `QJMODF(cjep0_t,vdep_t,zep,ajep_t,V(br_bpei),Cjep,Qjep) - - //Tunelling current - if (V(br_bpei) <0.0 || V(br_biei) < 0.0) begin : HICTUN - real pocce,czz; - if(tunode==1 && cjep0_t > 0.0 && vdep_t >0.0) begin - pocce = exp((1-1/zep)*ln(Cjep/cjep0_t)); - czz = -(V(br_bpei)/vdep_t)*ibets_t*pocce; - ibet = czz*exp(-abet_t/pocce); - end else if (tunode==0 && cjei0_t > 0.0 && vdei_t >0.0) begin - pocce = exp((1-1/zei)*ln(Cjei/cjei0_t)); - czz = -(V(br_biei)/vdei_t)*ibets_t*pocce; - ibet = czz*exp(-abet_t/pocce); - end else begin - ibet = 0.0; - end - end else begin - ibet = 0.0; - end - - - //Depletion capacitance and charge at peripheral b-c junction (bp,ci) - `HICJQ(cjcx02_t,vdcx_t,zcx,vptcx_t,V(br_bpci),c_dummy,qjcx0_t_ii) - - //Base currents across peripheral b-c junction (bp,ci) - `HICDIO(ibcxs,ibcxs_t,mbcx,V(br_bpci),ijbcx) - - //Depletion capacitance and charge at external b-c junction (b,ci) - `HICJQ(cjcx01_t,vdcx_t,zcx,vptcx_t,V(br_bci),c_dummy,qjcx0_t_i) - - //Depletion substrate capacitance and charge at s-c junction (si,ci) - `HICJQ(cjs0_t,vds_t,zs,vpts_t,V(br_sici),c_dummy,Qjs) - - //Parasitic substrate transistor transfer current and diffusion charge - if(itss > 0.0) begin : Sub_Transfer - HSUM = msf*VT; - HSa = limexp(V(br_bpci)/HSUM); - HSb = limexp(V(br_sici)/HSUM); - HSI_Tsu = itss_t*(HSa-HSb); - if(tsf > 0.0) begin - Qdsu = tsf_t*itss_t*HSa; - end else begin - Qdsu = 0.0; - end - end else begin - HSI_Tsu = 0.0; - Qdsu = 0.0; - end - - // Current gain computation for correlated noise implementation - betad=ibei; - if (betad > 0.0) begin - betadin=betad; - betan=it; - betadc=betan/betad; - end else begin - betadc=0.0; - end - - //Diode current for s-c junction (si,ci) - `HICDIO(iscs,iscs_t,msc,V(br_sici),ijsc) - - //Self-heating calculation - if (flsh == 1 && rth >= `MIN_R) begin - pterm = V(br_ciei)*it + (vdci_t-V(br_bici))*iavl; - end else if (flsh == 2 && rth >= `MIN_R) begin - pterm = V(br_ciei)*it + (vdci_t-V(br_bici))*iavl + ibei*V(br_biei) + ibci*V(br_bici) + ibep*V(br_bpei) + ijbcx*V(br_bpci) + ijsc*V(br_sici); - if (rbi >= `MIN_R) begin - pterm = pterm + V(br_bpbi_i)*V(br_bpbi_i)/rbi; - end - if (re_t >= `MIN_R) begin - pterm = pterm + V(br_eie_i)*V(br_eie_i)/re_t; - end - if (rcx_t >= `MIN_R) begin - pterm = pterm + V(br_cic_i)*V(br_cic_i)/rcx_t; - end - if (rbx_t >= `MIN_R) begin - pterm = pterm + V(br_bbp_i)*V(br_bbp_i)/rbx_t; - end - end - - Itxf = itf; - Qdeix = Qdei; - // Excess Phase calculation - - if (flnqs != 0 && Tf != 0) begin - Vxf1 = V(br_bxf1); - Vxf2 = V(br_bxf2); - - Ixf1 = (Vxf2-itf)/Tf*t0; - Ixf2 = (Vxf2-Vxf1)/Tf*t0; - Qxf1 = alit*Vxf1*t0; - Qxf2 = alit*Vxf2/3*t0; - Itxf = Vxf2; - - Vxf = V(br_bxf); //for RC nw - fact = t0/Tf; //for RC nw - Ixf = (Vxf - Qdei)*fact; //for RC nw - Qxf = alqf*Vxf*t0; //for RC nw - Qdeix = Vxf; //for RC nw - end else begin - Ixf1 = V(br_bxf1); - Ixf2 = V(br_bxf2); - Qxf1 = 0; - Qxf2 = 0; - - Ixf = V(br_bxf); - Qxf = 0; - end - -end //of Model_evaluation - -begin : Load_sources - - I(br_biei) <+ `Gmin*V(br_biei); - I(br_bici) <+ `Gmin*V(br_bici); - - I(br_bci) <+ ddt(qjcx0_t_i); - I(br_bci) <+ ddt(cbcpar1*V(br_bci)); - I(br_bpci) <+ ddt(cbcpar2*V(br_bpci)); - if (rbx >= `MIN_R) begin - I(br_bbp_i) <+ V(br_bbp_i)/rbx_t; - end else begin - I(br_bbp_i) <+ V(br_bbp_i)/1e-6; - //V(br_bbp_v) <+ 0.0; - end - if(rbi0 >= `MIN_R) begin - I(br_bpbi_i) <+ V(br_bpbi_i)/rbi; - I(br_bpbi_i) <+ ddt(qrbi); - end else begin - I(br_bpbi_i) <+ V(br_bpbi_i)/1e-6; - //V(br_bpbi_v) <+ 0.0; - end - if (tunode==1.0) begin - I(br_bpei) <+ -ibet; - end else begin - I(br_biei) <+ -ibet; - end - I(br_bpei) <+ ibep; - I(br_bpei) <+ irep; - I(br_bpei) <+ ddt(Qjep); - I(br_biei) <+ ibei; - I(br_biei) <+ irei; - I(br_biei) <+ ibh_rec; - I(br_biei) <+ ddt(Qdeix+Qjei); - I(br_bpsi) <+ HSI_Tsu; - I(br_bpci) <+ ijbcx; - I(br_bpci) <+ ddt(qjcx0_t_ii+Qdsu); - I(br_be) <+ ddt(cbepar1*V(br_be)); - I(br_bpe) <+ ddt(cbepar2*V(br_bpe)); - I(br_bici) <+ ibci-iavl; - I(br_bici) <+ ddt(Qdci+Qjci); - I(br_sici) <+ ijsc; - I(br_sici) <+ ddt(Qjs); - I(br_ciei) <+ Itxf; - I(br_eici) <+ itr; - if (rcx >= `MIN_R) begin - I(br_cic_i) <+ V(br_cic_i)/rcx_t; - end else begin - I(br_cic_i) <+ V(br_cic_i)/1e-6; - //V(br_cic_v) <+ 0.0; - end - if (re >= `MIN_R) begin - I(br_eie_i) <+ V(br_eie_i)/re_t; - end else begin - I(br_eie_i) <+ V(br_eie_i)/1e-6; - //V(br_eie_v) <+ 0.0; - end - if(rsu >= `MIN_R) begin - I(br_sis_i) <+ V(br_sis_i)/rsu; - I(br_sis_i) <+ ddt(csu*V(br_sis_i)); - end else begin - I(br_sis_i) <+ V(br_sis_i)/1e-6; - //V(br_sis_v) <+ 0.0; - end - - // Following code is an intermediate solution (if branch contribution is not supported): - // ****************************************** - if(flsh == 0 || rth < `MIN_R) begin - I(br_sht) <+ V(br_sht)/`MIN_R; - end else begin - I(br_sht) <+ V(br_sht)/rth-pterm; - I(br_sht) <+ ddt(cth*V(br_sht)); - end - - // ****************************************** - - // For simulators having no problem with V(br_sht) <+ 0.0 - // with external thermal node, follwing code may be used. - // Note that external thermal node should remain accessible - // even without self-heating. - // ******************************************** - //if(flsh == 0 || rth < `MIN_R) begin - // V(br_sht) <+ 0.0; - //end else begin - // I(br_sht) <+ V(br_sht)/rth-pterm; - // I(br_sht) <+ ddt(cth*V(br_sht)); - //end - // ******************************************** - - // NQS effect - I(br_bxf1) <+ Ixf1; - I(br_cxf1) <+ ddt(Qxf1); - I(br_bxf2) <+ Ixf2; - I(br_cxf2) <+ ddt(Qxf2); - - I(br_bxf) <+ Ixf; //for RC nw - I(br_cxf) <+ ddt(Qxf); //for RC nw - -end //of Load_sources - - -`NOISE begin : Noise_sources - - //Thermal noise - fourkt = 4.0 * `P_K * Tdev; - if(rbx >= `MIN_R) begin - I(br_bbp_i) <+ white_noise(fourkt/rbx_t, "thermal"); - end - if(rbi0 >= `MIN_R) begin - I(br_bpbi_i) <+ white_noise(fourkt/rbi, "thermal"); - end - if(rcx >= `MIN_R) begin - I(br_cic_i) <+ white_noise(fourkt/rcx_t, "thermal"); - end - if(re >= `MIN_R) begin - I(br_eie_i) <+ white_noise(fourkt/re_t, "thermal"); - end - if(rsu >= `MIN_R) begin - I(br_sis_i) <+ white_noise(fourkt/rsu, "thermal"); - end - - //Flicker noise : Fully correlated between the perimeter and internal base-node - flicker_Pwr = kf*pow((ibei+ibep),af); - if (cfbe == -1) begin - I(br_biei) <+ flicker_noise(flicker_Pwr,1.0); - end else begin - I(br_bpei) <+ flicker_noise(flicker_Pwr,1.0); - end - - //Shot noise - - twoq = 2.0 * `P_Q; - // I(br_ciei) <+ white_noise(twoq*it, "shot"); - I(br_cibi) <+ white_noise(twoq*iavl, "shot"); - - // I(br_biei) <+ white_noise(twoq*ibei, "shot"); - - I(br_bici) <+ white_noise(twoq*abs(ibci), "shot"); - - I(br_bpei) <+ white_noise(twoq*ibep, "shot"); - - I(br_bpci) <+ white_noise(twoq*abs(ijbcx), "shot"); - - I(br_sici) <+ white_noise(twoq*abs(ijsc), "shot"); - - // Code section for correlated noise - // Please turn-off this code section by "//" in order to run the code with Spectre - - I(b_n1) <+ white_noise(2 * `P_Q * ibei, "shot"); - I(b_n1) <+ V(b_n1); - I(b_n2) <+ white_noise(2 * `P_Q * it, "shot"); - I(b_n2) <+ V(b_n2); - - I(bi,ei) <+ V(b_n1); - I(ci,ei) <+ V(b_n2)+ddt((betadc/2)*alit*Tf*alit*Tf*ddt(V(b_n2))); - I(ci,ei) <+ betadc*ddt(-(Tf*alit)*V(b_n1)); -end //of Noise_sources - -end //analog -endmodule diff --git a/qucs-core/src/components/verilog/hicumL2V2p31n.va b/qucs-core/src/components/verilog/hicumL2V2p31n.va deleted file mode 100644 index b604b9a5c8..0000000000 --- a/qucs-core/src/components/verilog/hicumL2V2p31n.va +++ /dev/null @@ -1,1858 +0,0 @@ -//******************************************************************************* -//**************** COPYRIGHT NOTICE(Originator: Michael Schroter)**************** -//******************************************************************************* - -//The terms under which the HICUM/L2 software is provided are as follows: - -//The Software is distributed as is, completely without expressed -//or implied warranty or service support. Michael Schroter and his team -//members are not liable for the condition or performance of the software. - -//Michael Schroter owns the copyright and grants users a perpetual, -//irrevocable, worldwide, non-exclusive, royalty-free license with respect -//to the software as set forth below. - -//Michael Schroter hereby disclaims all implied warranties. - -//Michael Schroter grants the users the right to modify, copy, and -//redistribute the software and documentation, both within the user's -//organization and externally, subject to the following restrictions. - -//1. The users agree not to charge for the model owner code itself but may -//charge for additions, extensions, or support. - -//2. In any product based on the software, the users agree to acknowledge -//Michael Schroter that developed the model and software. This -//acknowledgment shall appear in the product documentation. - -//3. Users agree to obey all government restrictions governing -//redistribution or export of the software. - -//4. The Users agree to reproduce any copyright notice which appears on -//the software and documentation on any copy or modification of such -//made available to others. - -//****************************************************************************** -//****************************************************************************** - -//HICUM Level_2 Version_2.31: A Verilog-A Description - -//******** 11-05-2012, update to HICUM/L2 v2.31 ******************************** - -//03/12: Introduction of "type" model parameter to switch between "NPN" & "PNP" -// type of devices -//03/12: Correlated Noise: Conditional loop for preventing negative values under -// square root -//02/12: Correlated Noise implementation but without Filter approach (small code) -// Changed to temperature dependence of Rth now using alrth -// Simplification of the lateral NQS modeling in order to reduce the number of -// calculated derivatives. -// Changed to default values of the vertical NQS effect parameters. - -//********** Update to HICUM/L2 v2.30 ****************************************** -// The code contains the following new implementation compared to v2.24: - -// Accurate modeling of transfer current and gm in medium current range with. -// Bias dependent weight factor hjEi. -// Weight factor hf0 for low current minority charge. -// Explicit physics-based formulation for BC barrier effect on minority charge. -// Improved formulation for the critical current. -// Added flicker noise across emitter resistance. -// Added temperature dependence of RTH. -// Use of mrei and mrep for temperature dependence of IREIs and IREPs. -// Added Gmin also between internal collector and emitter node. -// Usage of "ddx" operator only for determination of capacitances from the -// corresponding diffusion charges (Qdei, Qdci). -// The following effects are turned on by setting flcomp = 2.3 (as larger) -// * Temperature dependence of tef0 has been turned off. -// * Temperature dependence of hfe and hfc is turned on. -// * Modified formulation of temperature dependent internal BE recombination current & -// peripheral current - -//*********End Update Hicum/L2 v2.30******************************************** - -//****************************************************************************** -//This code contains a Verilog-A implementation of Vertical Non-Quasi-Static(NQS) -//Effects using adjunct gyrator networks. To turn on this effect please set FLNQS=1. -//Although Vertical NQS effects have been taken into account in HICUM from the very -//beginning (see original FTN code and built-in v2.1 HICUM model inside most of the -//existing circuit simulators) their implementation has been based on Weil's approach. -//However, using Verilog, it is presently not possible to implement Weil's approach, -//since there does not exist access to previous time-steps of the simulator. -//The nearly available Verilog-A solution reproduces the results of previous -//HICUM versions (cf. documentation). -//****************************************************************************** - -// ***************Bug fix and optimization************* -// 04/08: New range has been defined for FDQR0. -// 11/07: Bugs have been fixed in macro HICFCI and HICQFC -// 10/06: in @(initial_model), external if-block for HICTUN_T removed -// 11/06: within HICQFC, minor changes made for LATB<=0.01; -// also HICFCI and HICFCT are changed accordingly -// to ensure correct derivatives -// Upper limit of FGEO parameter was changed to infinity. -// 12/06: expressions for Cdei and Cdci are corrected not to include -// Ccdei and Cbdci respectively (used in Crbi expression). - -// 01/06: FCdf1_dw assigned expression (missing in v2.21) -// FCa and FCa1 are found to have same expression: FCa is omitted in those cases -// FCa1 written instead of FCa in the expression for FCf_ci -// Thermal node "tnode" set as external -// zetasct = mg+1-2.5 changed to zetasct = mg-1.5; -// Code optimization: Temperature dependent parts are modeled in two separate blocks: -// within @(initial_model) when self-heating is OFF -// outside @(initial_model) when self-heating is ON -// 03/06 : Further fix -// vlim_t,ibcis_t,ibcxs_t,itss_t,iscs_t considered in compatibility block -// ddt() operators are separated in contribution expressions. -// FLCOMP parameter is given different values -// 05/06: -// all if-else blocks marked with begin-end -// unused variables deleted -// all series resistors and RTH are allowed to have a minimum value MIN_R -// only tunneling current source contribution within if-then-else -// 06/06: HICRBI deleted and instead the code changed (hyperbolic smoothing in -// conductivity modulation part) and put in relevant portion of the code. -// 07/06: ddx() operator used to find out capacitances from charges: -// QJMODF,QJMOD,HICJQ changed accordingly -// Lateral NQS effect modified with ddx() operator. -// HICFCT included for downward compatibility reason. -// Few macros are taken inside the code: HICICK, HICAVL, HICTUN (more optimized), -// internal base resistance (Qjci included under conductivity modulation, hyperbolic smoothing used) -// Gmin added at (bi,ei) and (bi,ci) branches. -// 08/06: Units added in the parameter descriptions. - -// ********************************************************************************* -// 06/06: Comment on NODE COLLAPSING: -// Presently this verilog code permits a minimum of 1 milli-Ohm resistance for any -// series resistance as well as for thermal resistance RTH. If any of the resistance -// values drops below this minimum value, the corresponding nodes are shorted with -// zero voltage contribution. We want the model compilers/simulators deal this -// situation in such a manner that the corresponding node is COLLAPSED. -// We expect that the simulators should permit current contribution statement -// for any branch with resistance value more than (or equal to) 1 milli-Ohm without -// any convergence problem. In fact, we wish NOT to have to use a voltage contribution -// statement in our Verilog code, except as an indication for the model compiler/simulator -// to interpret a zero branch voltage as NODE-COLLAPSING action. -// ********************************************************************************** - - -//Default simulator: Spectre - -`ifdef insideADMS - `define MODEL @(initial_model) - `define NOISE @(noise) - `define ATTR(txt) (*txt*) -`else - `define MODEL - `define NOISE - `define ATTR(txt) -`endif - - -`define VPT_thresh 1.0e2 -`define Dexp_lim 80.0 -`define Cexp_lim 80.0 -`define DFa_fj 1.921812 -`define RTOLC 1.0e-5 -`define l_itmax 100 -`define TMAX 326.85 -`define TMIN -100.0 -`define LN_EXP_LIMIT 11.0 -`define MIN_R 0.001 -`define Gmin 1.0e-12 -//`define Gmin $simparam("gmin",1e-12) //suggested by L.L - -//ADS -`include "constants.vams" -`include "disciplines.vams" -//`include "compact.vams" - -//Spectre -//`include "constants.h" -//`include "discipline.h" - -//////////////Explicit Capacitance and Charge Expression/////////////// - -// DEPLETION CHARGE CALCULATION -// Hyperbolic smoothing used; no punch-through -// INPUT: -// c_0 : zero-bias capacitance -// u_d : built-in voltage -// z : exponent coefficient -// a_j : control parameter for C peak value at high forward bias -// U_cap : voltage across junction -// IMPLICIT INPUT: -// VT : thermal voltage -// OUTPUT: -// Qz : depletion Charge -// C : depletion capacitance -`define QJMODF(c_0,u_d,z,a_j,U_cap,C,Qz)\ - if(c_0 > 0.0) begin\ - DFV_f = u_d*(1.0-exp(-ln(a_j)/z));\ - DFv_e = (DFV_f-U_cap)/VT;\ - DFs_q = sqrt(DFv_e*DFv_e+`DFa_fj);\ - DFs_q2 = (DFv_e+DFs_q)*0.5;\ - DFv_j = DFV_f-VT*DFs_q2;\ - DFdvj_dv = DFs_q2/DFs_q;\ - DFb = ln(1.0-DFv_j/u_d);\ - DFC_j1 = c_0*exp(-z*DFb)*DFdvj_dv;\ - C = DFC_j1+a_j*c_0*(1.0-DFdvj_dv);\ - DFQ_j = c_0*u_d*(1.0-exp(DFb*(1.0-z)))/(1.0-z);\ - Qz = DFQ_j+a_j*c_0*(U_cap-DFv_j);\ - end else begin\ - C = 0.0;\ - Qz = 0.0;\ - end - -//////////////////////////////////////////////////////////////// - - -//////////////Explicit Capacitance and Charge Expression/////////////// - - -// DEPLETION CHARGE CALCULATION CONSIDERING PUNCH THROUGH -// smoothing of reverse bias region (punch-through) -// and limiting to a_j=Cj,max/Cj0 for forward bias. -// Important for base-collector and collector-substrate junction -// INPUT: -// c_0 : zero-bias capacitance -// u_d : built-in voltage -// z : exponent coefficient -// a_j : control parameter for C peak value at high forward bias -// v_pt : punch-through voltage (defined as qNw^2/2e) -// U_cap : voltage across junction -// IMPLICIT INPUT: -// VT : thermal voltage -// OUTPUT: -// Qz : depletion charge -// C : depletion capacitance -`define QJMOD(c_0,u_d,z,a_j,v_pt,U_cap,C,Qz)\ - if(c_0 > 0.0) begin\ - Dz_r = z/4.0;\ - Dv_p = v_pt-u_d;\ - DV_f = u_d*(1.0-exp(-ln(a_j)/z));\ - DC_max = a_j*c_0;\ - DC_c = c_0*exp((Dz_r-z)*ln(v_pt/u_d));\ - Dv_e = (DV_f-U_cap)/VT;\ - if(Dv_e < `Cexp_lim) begin\ - De = exp(Dv_e);\ - De_1 = De/(1.0+De);\ - Dv_j1 = DV_f-VT*ln(1.0+De);\ - end else begin\ - De_1 = 1.0;\ - Dv_j1 = U_cap;\ - end\ - Da = 0.1*Dv_p+4.0*VT;\ - Dv_r = (Dv_p+Dv_j1)/Da;\ - if(Dv_r < `Cexp_lim) begin\ - De = exp(Dv_r);\ - De_2 = De/(1.0+De);\ - Dv_j2 = -Dv_p+Da*ln(1.0+De);\ - end else begin\ - De_2 = 1.0;\ - Dv_j2 = Dv_j1;\ - end\ - Dv_j4 = U_cap-Dv_j1;\ - DCln1 = ln(1.0-Dv_j1/u_d);\ - DCln2 = ln(1.0-Dv_j2/u_d);\ - Dz1 = 1.0-z;\ - Dzr1 = 1.0-Dz_r;\ - DC_j1 = c_0*exp(DCln2*(-z))*De_1*De_2;\ - DC_j2 = DC_c*exp(DCln1*(-Dz_r))*(1.0-De_2);\ - DC_j3 = DC_max*(1.0-De_1);\ - C = DC_j1+DC_j2+DC_j3;\ - DQ_j1 = c_0*(1.0-exp(DCln2*Dz1))/Dz1;\ - DQ_j2 = DC_c*(1.0-exp(DCln1*Dzr1))/Dzr1;\ - DQ_j3 = DC_c*(1.0-exp(DCln2*Dzr1))/Dzr1;\ - Qz = (DQ_j1+DQ_j2-DQ_j3)*u_d+DC_max*Dv_j4;\ - end else begin\ - C = 0.0;\ - Qz = 0.0;\ - end - - -// DEPLETION CHARGE & CAPACITANCE CALCULATION SELECTOR -// Dependent on junction punch-through voltage -// Important for collector related junctions -`define HICJQ(c_0,u_d,z,v_pt,U_cap,C,Qz)\ - if(v_pt < `VPT_thresh) begin\ - `QJMOD(c_0,u_d,z,2.4,v_pt,U_cap,C,Qz)\ - end else begin\ - `QJMODF(c_0,u_d,z,2.4,U_cap,C,Qz)\ - end - - -// A CALCULATION NEEDED FOR COLLECTOR MINORITY CHARGE FORMULATION -// INPUT: -// zb,zl : zeta_b and zeta_l (model parameters, TED 10/96) -// w : normalized injection width -// OUTPUT: -// hicfcio : function of equation (2.1.17-10) -`define HICFCI(zb,zl,w,hicfcio,dhicfcio_dw)\ - z = zb*w;\ - lnzb = ln(1+zb*w);\ - if(z > 1.0e-6) begin\ - x = 1.0+z;\ - a = x*x;\ - a2 = 0.250*(a*(2.0*lnzb-1.0)+1.0);\ - a3 = (a*x*(3.0*lnzb-1.0)+1.0)/9.0;\ - r = zl/zb;\ - hicfcio = ((1.0-r)*a2+r*a3)/zb;\ - dhicfcio_dw = ((1.0-r)*x+r*a)*lnzb;\ - end else begin\ - a = z*z;\ - a2 = 3.0+z-0.25*a+0.10*z*a;\ - a3 = 2.0*z+0.75*a-0.20*a*z;\ - hicfcio = (zb*a2+zl*a3)*w*w/6.0;\ - dhicfcio_dw = (1+zl*w)*(1+z)*lnzb;\ - end - - -// NEEDED TO CALCULATE WEIGHTED ICCR COLLECTOR MINORITY CHARGE -// INPUT: -// z : zeta_b or zeta_l -// w : normalized injection width -// OUTPUT: -// hicfcto : output -// dhicfcto_dw : derivative of output wrt w -`define HICFCT(z,w,hicfcto,dhicfcto_dw)\ - a = z*w;\ - lnz = ln(1+z*w);\ - if (a > 1.0e-6) begin\ - hicfcto = (a - lnz)/z;\ - dhicfcto_dw = a / (1.0 + a);\ - end else begin\ - hicfcto = 0.5 * a * w;\ - dhicfcto_dw = a;\ - end - - -// COLLECTOR CURRENT SPREADING CALCULATION -// collector minority charge incl. 2D/3D current spreading (TED 10/96) -// INPUT: -// Ix : forward transport current component (itf) -// I_CK : critical current -// FFT_pcS : dependent on fthc and thcs (parameters) -// IMPLICIT INPUT: -// ahc, latl, latb : model parameters -// VT : thermal voltage -// OUTPUT: -// Q_fC, Q_CT: actual and ICCR (weighted) hole charge -// T_fC, T_cT: actual and ICCR (weighted) transit time -// Derivative dfCT_ditf not properly implemented yet -`define HICQFC(Ix,I_CK,FFT_pcS,Q_fC,Q_CT,T_fC,T_cT)\ - Q_fC = FFT_pcS*Ix;\ - FCa = 1.0-I_CK/Ix;\ - FCrt = sqrt(FCa*FCa+ahc);\ - FCa_ck = 1.0-(FCa+FCrt)/(1.0+sqrt(1.0+ahc));\ - FCdaick_ditf = (FCa_ck-1.0)*(1-FCa)/(FCrt*Ix);\ - if(latb > latl) begin\ - FCz = latb-latl;\ - FCxl = 1.0+latl;\ - FCxb = 1.0+latb;\ - if(latb > 0.01) begin\ - FCln = ln(FCxb/FCxl);\ - FCa1 = exp((FCa_ck-1.0)*FCln);\ - FCd_a = 1.0/(latl-FCa1*latb);\ - FCw = (FCa1-1.0)*FCd_a;\ - FCdw_daick = -FCz*FCa1*FCln*FCd_a*FCd_a;\ - FCa1 = ln((1.0+latb*FCw)/(1.0+latl*FCw));\ - FCda1_dw = latb/(1.0+latb*FCw) - latl/(1.0+latl*FCw);\ - end else begin\ - FCf1 = 1.0-FCa_ck;\ - FCd_a = 1.0/(1.0+FCa_ck*latb);\ - FCw = FCf1*FCd_a;\ - FCdw_daick = -1.0*FCd_a*FCd_a*FCxb*FCd_a;\ - FCa1 = FCz*FCw;\ - FCda1_dw = FCz;\ - end\ - FCf_CT = 2.0/FCz;\ - FCw2 = FCw*FCw;\ - FCf1 = latb*latl*FCw*FCw2/3.0+(latb+latl)*FCw2/2.0+FCw;\ - FCdf1_dw = latb*latl*FCw2 + (latb+latl)*FCw + 1.0;\ - `HICFCI(latb,latl,FCw,FCf2,FCdf2_dw)\ - `HICFCI(latl,latb,FCw,FCf3,FCdf3_dw)\ - FCf_ci = FCf_CT*(FCa1*FCf1-FCf2+FCf3);\ - FCdfc_dw = FCf_CT*(FCa1*FCdf1_dw+FCda1_dw*FCf1-FCdf2_dw+FCdf3_dw);\ - FCdw_ditf = FCdw_daick*FCdaick_ditf;\ - FCdfc_ditf = FCdfc_dw*FCdw_ditf;\ - if(flcomp == 0.0 || flcomp == 2.1) begin\ - `HICFCT(latb,FCw,FCf2,FCdf2_dw)\ - `HICFCT(latl,FCw,FCf3,FCdf3_dw)\ - FCf_CT = FCf_CT*(FCf2-FCf3);\ - FCdfCT_dw = FCf_CT*(FCdf2_dw-FCdf3_dw);\ - FCdfCT_ditf = FCdfCT_dw*FCdw_ditf;\ - end else begin\ - FCf_CT = FCf_ci;\ - FCdfCT_ditf = FCdfc_ditf;\ - end\ - end else begin\ - if(latb > 0.01) begin\ - FCd_a = 1.0/(1.0+FCa_ck*latb);\ - FCw = (1.0-FCa_ck)*FCd_a;\ - FCdw_daick = -(1.0+latb)*FCd_a*FCd_a;\ - end else begin\ - FCw = 1.0-FCa_ck-FCa_ck*latb;\ - FCdw_daick = -(1.0+latb);\ - end\ - FCw2 = FCw*FCw;\ - FCz = latb*FCw;\ - FCz_1 = 1.0+FCz;\ - FCd_f = 1.0/(FCz_1);\ - FCf_ci = FCw2*(1.0+FCz/3.0)*FCd_f;\ - FCdfc_dw = 2.0*FCw*(FCz_1+FCz*FCz/3.0)*FCd_f*FCd_f;\ - FCdw_ditf = FCdw_daick*FCdaick_ditf;\ - FCdfc_ditf = FCdfc_dw*FCdw_ditf;\ - if(flcomp == 0.0 || flcomp == 2.1) begin\ - if (FCz > 0.001) begin\ - FCf_CT = 2.0*(FCz_1*ln(FCz_1)-FCz)/(latb*latb*FCz_1);\ - FCdfCT_dw = 2.0*FCw*FCd_f*FCd_f;\ - end else begin\ - FCf_CT = FCw2*(1.0-FCz/3.0)*FCd_f;\ - FCdfCT_dw = 2.0*FCw*(1.0-FCz*FCz/3.0)*FCd_f*FCd_f;\ - end\ - FCdfCT_ditf = FCdfCT_dw*FCdw_ditf;\ - end else begin\ - FCf_CT = FCf_ci;\ - FCdfCT_ditf = FCdfc_ditf;\ - end\ - end\ - Q_CT = Q_fC*FCf_CT*exp((FFdVc-vcbar)/VT);\ - Q_fC = Q_fC*FCf_ci*exp((FFdVc-vcbar)/VT);\ - T_fC = FFT_pcS*exp((FFdVc-vcbar)/VT)*(FCf_ci+Ix*FCdfc_ditf)+Q_fC/VT*FFdVc_ditf;\ - T_cT = FFT_pcS*exp((FFdVc-vcbar)/VT)*(FCf_CT+Ix*FCdfCT_ditf)+Q_CT/VT*FFdVc_ditf; - -// TRANSIT-TIME AND STORED MINORITY CHARGE -// INPUT: -// itf : forward transport current -// I_CK : critical current -// T_f : transit time \ -// Q_f : minority charge / for low current -// IMPLICIT INPUT: -// tef0, gtfe, fthc, thcs, ahc, latl, latb : model parameters -// OUTPUT: -// T_f : transit time \ -// Q_f : minority charge / transient analysis -// T_fT : transit time \ -// Q_fT : minority charge / ICCR (transfer current) -// Q_bf : excess base charge -`define HICQFF(itf,I_CK,T_f,Q_f,T_fT,Q_fT,Q_bf)\ - if(itf < 1.0e-6*I_CK) begin\ - Q_fT = Q_f;\ - T_fT = T_f;\ - end else begin\ - FFitf_ick = itf/I_CK;\ - FFdTef = tef0_t*exp(gtfe*ln(FFitf_ick));\ - FFdQef = FFdTef*itf/(1+gtfe);\ - if (icbar<1e-10) begin\ - FFdVc = 0;\ - FFdVc_ditf = 0;\ - end else begin\ - FFib = (itf-I_CK)/icbar;\ - if (FFib < -1.0e10) begin\ - FFib = -1.0e10;\ - end\ - FFfcbar = (FFib+sqrt(FFib*FFib+acbar))/2.0;\ - FFdib_ditf = FFfcbar/sqrt(FFib*FFib+acbar)/icbar;\ - FFdVc = vcbar*exp(-1.0/FFfcbar);\ - FFdVc_ditf = FFdVc/(FFfcbar*FFfcbar)*FFdib_ditf;\ - end\ - FFdQbfb = (1-fthc)*thcs_t*itf*(exp(FFdVc/VT)-1);\ - FFdTbfb = FFdQbfb/itf+(1-fthc)*thcs_t*itf*exp(FFdVc/VT)/VT*FFdVc_ditf;\ - FFic = 1-1.0/FFitf_ick;\ - FFw = (FFic+sqrt(FFic*FFic+ahc))/(1+sqrt(1+ahc));\ - FFdQfhc = thcs_t*itf*FFw*FFw*exp((FFdVc-vcbar)/VT);\ - FFdTfhc = FFdQfhc*(1.0/itf*(1.0+2.0/(FFitf_ick*sqrt(FFic*FFic+ahc)))+1.0/VT*FFdVc_ditf);\ - if(latb <= 0.0 && latl <= 0.0) begin\ - FFdQcfc = fthc*FFdQfhc;\ - FFdTcfc = fthc*FFdTfhc;\ - FFdQcfcT = FFdQcfc;\ - FFdTcfcT = FFdTcfc;\ - end else begin\ - `HICQFC(itf,I_CK,fthc*thcs_t,FFdQcfc,FFdQcfcT,FFdTcfc,FFdTcfcT)\ - end\ - FFdQbfc = (1-fthc)*FFdQfhc;\ - FFdTbfc = (1-fthc)*FFdTfhc;\ - Q_fT = hf0_t*Q_f+FFdQbfb+FFdQbfc+hfe_t*FFdQef+hfc_t*FFdQcfcT;\ - T_fT = hf0_t*T_f+FFdTbfb+FFdTbfc+hfe_t*FFdTef+hfc_t*FFdTcfcT;\ - Q_f = Q_f+(FFdQbfb+FFdQbfc)+FFdQef+FFdQcfc;\ - T_f = T_f+(FFdTbfb+FFdTbfc)+FFdTef+FFdTcfc;\ - Q_bf = FFdQbfb+FFdQbfc;\ - end - - - - -// IDEAL DIODE (WITHOUT CAPACITANCE): -// conductance calculation not required -// INPUT: -// IS, IST : saturation currents (model parameter related) -// UM1 : ideality factor -// U : branch voltage -// IMPLICIT INPUT: -// VT : thermal voltage -// OUTPUT: -// Iz : diode current -`define HICDIO(IS,IST,UM1,U,Iz)\ - DIOY = U/(UM1*VT);\ - if (IS > 0.0) begin\ - if (DIOY > `Dexp_lim) begin\ - le = (1 + (DIOY - `Dexp_lim));\ - DIOY = `Dexp_lim;\ - end else begin\ - le = 1;\ - end\ - le = le*limexp(DIOY);\ - Iz = IST*(le-1.0);\ - if(DIOY <= -14.0) begin\ - Iz = -IST;\ - end\ - end else begin\ - Iz = 0.0;\ - end - - - -// TEMPERATURE UPDATE OF JUNCTION CAPACITANCE RELATED PARAMETERS -// INPUT: -// mostly model parameters -// x : zero bias junction capacitance -// y : junction built-in potential -// z : grading co-efficient -// w : ratio of maximum to zero-bias value of capacitance or punch-through voltage -// is_al : condition factor to check what "w" stands for -// vgeff : band-gap voltage -// IMPLICIT INPUT: -// VT : thermal voltage -// vt0,qtt0,ln_qtt0,mg : other model variables -// OUTPUT: -// c_j_t : temperature update of "c_j" -// vd_t : temperature update of "vd0" -// w_t : temperature update of "w" -`define TMPHICJ(c_j,vd0,z,w,is_al,vgeff,c_j_t,vd_t,w_t)\ - if (c_j > 0.0) begin\ - vdj0 = 2*vt0*ln(exp(vd0*0.5/vt0)-exp(-0.5*vd0/vt0));\ - vdjt = vdj0*qtt0+vgeff*(1-qtt0)-mg*VT*ln_qtt0;\ - vdt = vdjt+2*VT*ln(0.5*(1+sqrt(1+4*exp(-vdjt/VT))));\ - vd_t = vdt;\ - c_j_t = c_j*exp(z*ln(vd0/vd_t));\ - if (is_al == 1) begin\ - w_t = w*vd_t/vd0;\ - end else begin\ - w_t = w;\ - end\ - end else begin\ - c_j_t = c_j;\ - vd_t = vd0;\ - w_t = w;\ - end - - - -module hicumL2V2p31n (c,b,e,s,tnode); - -//Node definitions - -inout c,b,e,s,tnode; -electrical c,b,e,s,ci,ei,bp,bi,si; -electrical xf1,xf2; -electrical xf; //RC nw - -electrical tnode; - -electrical n1,n2; - - -//Branch definitions -branch (b,bp) br_bbp_i; -branch (b,bp) br_bbp_v; -branch (ci,c) br_cic_i; -branch (ci,c) br_cic_v; -branch (ei,e) br_eie_i; -branch (ei,e) br_eie_v; -branch (bp,bi) br_bpbi_i; -branch (bp,bi) br_bpbi_v; -branch (si,s) br_sis_i; -branch (si,s) br_sis_v; -branch (bi,ei) br_biei; -branch (bi,ci) br_bici; -branch (ci,bi) br_cibi; -branch (ci,ei) br_ciei; -branch (ei,ci) br_eici; -branch (bp,e) br_bpe; -branch (b,e) br_be; -branch (bp,ei) br_bpei; -branch (bp,ci) br_bpci; -branch (b,ci) br_bci; -branch (si,ci) br_sici; -branch (bp,si) br_bpsi; -branch (tnode ) br_sht; - -//Phase network for ITF -branch (xf1 ) br_bxf1; -branch (xf1 ) br_cxf1; -branch (xf2 ) br_bxf2; -branch (xf2 ) br_cxf2; - -//Phase network for QF - -branch (xf ) br_bxf; //for RC nw -branch (xf ) br_cxf; //for RC nw -branch (n1 ) b_n1; -branch (n2 ) b_n2; - -// -- ########################################################### -// -- ########### Parameters initialization ################ -// -- ########################################################### - - -//Transfer current -parameter real c10 = 2.0E-30 from [0:1] `ATTR(info="GICCR constant" unit="A^2s"); -parameter real qp0 = 2.0E-14 from (0:1] `ATTR(info="Zero-bias hole charge" unit="Coul"); -parameter real ich = 0.0 from [0:inf) `ATTR(info="High-current correction for 2D and 3D effects" unit="A"); //`0' signifies infinity -parameter real hf0 = 1.0 from [0:inf) `ATTR(info="Weight factor for the low current minority charge"); -parameter real hfe = 1.0 from [0:inf] `ATTR(info="Emitter minority charge weighting factor in HBTs"); -parameter real hfc = 1.0 from [0:inf] `ATTR(info="Collector minority charge weighting factor in HBTs"); -parameter real hjei = 1.0 from [0:100] `ATTR(info="B-E depletion charge weighting factor in HBTs"); -parameter real ahjei = 0.0 from [0:100] `ATTR(info="Parameter describing the slope of hjEi(VBE)"); -parameter real rhjei = 1.0 from (0:10] `ATTR(info="Smoothing parameter for hjEi(VBE) at high voltage"); -parameter real hjci = 1.0 from [0:100] `ATTR(info="B-C depletion charge weighting factor in HBTs"); - -//Base-Emitter diode currents -parameter real ibeis = 1.0E-18 from [0:1] `ATTR(info="Internal B-E saturation current" unit="A"); -parameter real mbei = 1.0 from (0:10] `ATTR(info="Internal B-E current ideality factor"); -parameter real ireis = 0.0 from [0:1] `ATTR(info="Internal B-E recombination saturation current" unit="A"); -parameter real mrei = 2.0 from (0:10] `ATTR(info="Internal B-E recombination current ideality factor"); -parameter real ibeps = 0.0 from [0:1] `ATTR(info="Peripheral B-E saturation current" unit="A"); -parameter real mbep = 1.0 from (0:10] `ATTR(info="Peripheral B-E current ideality factor"); -parameter real ireps = 0.0 from [0:1] `ATTR(info="Peripheral B-E recombination saturation current" unit="A"); -parameter real mrep = 2.0 from (0:10] `ATTR(info="Peripheral B-E recombination current ideality factor"); -parameter real mcf = 1.0 from (0:10] `ATTR(info="Non-ideality factor for III-V HBTs"); - -//Transit time for excess recombination current at b-c barrier -parameter real tbhrec = 0.0 from [0:inf) `ATTR(info="Base current recombination time constant at B-C barrier for high forward injection" unit="s"); - -//Base-Collector diode currents -parameter real ibcis = 1.0E-16 from [0:1.0] `ATTR(info="Internal B-C saturation current" unit="A"); -parameter real mbci = 1.0 from (0:10] `ATTR(info="Internal B-C current ideality factor"); -parameter real ibcxs = 0.0 from [0:1.0] `ATTR(info="External B-C saturation current" unit="A"); -parameter real mbcx = 1.0 from (0:10] `ATTR(info="External B-C current ideality factor"); - -//Base-Emitter tunneling current -parameter real ibets = 0.0 from [0:1] `ATTR(info="B-E tunneling saturation current" unit="A"); -parameter real abet = 40 from [0:inf) `ATTR(info="Exponent factor for tunneling current"); -parameter integer tunode= 1 from [0:1] `ATTR(info="Specifies the base node connection for the tunneling current"); // =1 signifies perimeter node - -//Base-Collector avalanche current -parameter real favl = 0.0 from [0:inf) `ATTR(info="Avalanche current factor" unit="1/V"); -parameter real qavl = 0.0 from [0:inf) `ATTR(info="Exponent factor for avalanche current" unit="Coul"); -parameter real alfav = 0.0 `ATTR(info="Relative TC for FAVL" unit="1/K"); -parameter real alqav = 0.0 `ATTR(info="Relative TC for QAVL" unit="1/K"); - -//Series resistances -parameter real rbi0 = 0.0 from [0:inf) `ATTR(info="Zero bias internal base resistance" unit="Ohm"); -parameter real rbx = 0.0 from [0:inf) `ATTR(info="External base series resistance" unit="Ohm"); -parameter real fgeo = 0.6557 from [0:inf] `ATTR(info="Factor for geometry dependence of emitter current crowding"); -parameter real fdqr0 = 0.0 from [-0.5:100] `ATTR(info="Correction factor for modulation by B-E and B-C space charge layer"); -parameter real fcrbi = 0.0 from [0:1] `ATTR(info="Ratio of HF shunt to total internal capacitance (lateral NQS effect)"); -parameter real fqi = 1.0 from [0:1] `ATTR(info="Ration of internal to total minority charge"); -parameter real re = 0.0 from [0:inf) `ATTR(info="Emitter series resistance" unit="Ohm"); -parameter real rcx = 0.0 from [0:inf) `ATTR(info="External collector series resistance" unit="Ohm"); - -//Substrate transistor -parameter real itss = 0.0 from [0:1.0] `ATTR(info="Substrate transistor transfer saturation current" unit="A"); -parameter real msf = 1.0 from (0:10] `ATTR(info="Forward ideality factor of substrate transfer current"); -parameter real iscs = 0.0 from [0:1.0] `ATTR(info="C-S diode saturation current" unit="A"); -parameter real msc = 1.0 from (0:10] `ATTR(info="Ideality factor of C-S diode current"); -parameter real tsf = 0.0 from [0:inf) `ATTR(info="Transit time for forward operation of substrate transistor" unit="s"); - -//Intra-device substrate coupling -parameter real rsu = 0.0 from [0:inf) `ATTR(info="Substrate series resistance" unit="Ohm"); -parameter real csu = 0.0 from [0:inf) `ATTR(info="Substrate shunt capacitance" unit="F"); - -//Depletion Capacitances -parameter real cjei0 = 1.0E-20 from [0:inf) `ATTR(info="Internal B-E zero-bias depletion capacitance" unit="F"); -parameter real vdei = 0.9 from (0:10] `ATTR(info="Internal B-E built-in potential" unit="V"); -parameter real zei = 0.5 from (0:1] `ATTR(info="Internal B-E grading coefficient"); -parameter real ajei = 2.5 from [1:inf) `ATTR(info="Ratio of maximum to zero-bias value of internal B-E capacitance"); -parameter real cjep0 = 1.0E-20 from [0:inf) `ATTR(info="Peripheral B-E zero-bias depletion capacitance" unit="F"); -parameter real vdep = 0.9 from (0:10] `ATTR(info="Peripheral B-E built-in potential" unit="V"); -parameter real zep = 0.5 from (0:1] `ATTR(info="Peripheral B-E grading coefficient"); -parameter real ajep = 2.5 from [1:inf) `ATTR(info="Ratio of maximum to zero-bias value of peripheral B-E capacitance"); -parameter real cjci0 = 1.0E-20 from [0:inf) `ATTR(info="Internal B-C zero-bias depletion capacitance" unit="F"); -parameter real vdci = 0.7 from (0:10] `ATTR(info="Internal B-C built-in potential" unit="V"); -parameter real zci = 0.4 from (0:1] `ATTR(info="Internal B-C grading coefficient"); -parameter real vptci = 100 from (0:100] `ATTR(info="Internal B-C punch-through voltage" unit="V"); -parameter real cjcx0 = 1.0E-20 from [0:inf) `ATTR(info="External B-C zero-bias depletion capacitance" unit="F"); -parameter real vdcx = 0.7 from (0:10] `ATTR(info="External B-C built-in potential" unit="V"); -parameter real zcx = 0.4 from (0:1] `ATTR(info="External B-C grading coefficient"); -parameter real vptcx = 100 from (0:100] `ATTR(info="External B-C punch-through voltage" unit="V"); -parameter real fbcpar = 0.0 from [0:1] `ATTR(info="Partitioning factor of parasitic B-C cap"); -parameter real fbepar = 1.0 from [0:1] `ATTR(info="Partitioning factor of parasitic B-E cap"); -parameter real cjs0 = 0.0 from [0:inf) `ATTR(info="C-S zero-bias depletion capacitance" unit="F"); -parameter real vds = 0.6 from (0:10] `ATTR(info="C-S built-in potential" unit="V"); -parameter real zs = 0.5 from (0:1] `ATTR(info="C-S grading coefficient"); -parameter real vpts = 100 from (0:100] `ATTR(info="C-S punch-through voltage" unit="V"); - -//Diffusion Capacitances -parameter real t0 = 0.0 from [0:inf) `ATTR(info="Low current forward transit time at VBC=0V" unit="s"); -parameter real dt0h = 0.0 from (-inf:inf) `ATTR(info="Time constant for base and B-C space charge layer width modulation" unit="s"); -parameter real tbvl = 0.0 from (-inf:inf) `ATTR(info="Time constant for modeling carrier jam at low VCE" unit="s"); -parameter real tef0 = 0.0 from [0:inf) `ATTR(info="Neutral emitter storage time" unit="s"); -parameter real gtfe = 1.0 from (0:10] `ATTR(info="Exponent factor for current dependence of neutral emitter storage time"); -parameter real thcs = 0.0 from [0:inf) `ATTR(info="Saturation time constant at high current densities" unit="s"); -parameter real ahc = 0.1 from (0:10] `ATTR(info="Smoothing factor for current dependence of base and collector transit time"); -parameter real fthc = 0.0 from [0:1] `ATTR(info="Partitioning factor for base and collector portion"); -parameter real rci0 = 150 from (0:inf) `ATTR(info="Internal collector resistance at low electric field" unit="Ohm"); -parameter real vlim = 0.5 from (0:10] `ATTR(info="Voltage separating ohmic and saturation velocity regime" unit="V"); -parameter real vces = 0.1 from [0:1] `ATTR(info="Internal C-E saturation voltage" unit="V"); -parameter real vpt = 100.0 from (0:inf] `ATTR(info="Collector punch-through voltage" unit="V"); // `0' signifies infinity -parameter real tr = 0.0 from [0:inf) `ATTR(info="Storage time for inverse operation" unit="s"); -parameter real vcbar = 0.0 from [0:1] `ATTR(info="Barrier voltage" unit="V"); -parameter real icbar = 0.0 from [0:1] `ATTR(info="Normalization parameter" unit="A"); -parameter real acbar = 0.01 from (0:10] `ATTR(info="Smoothing parameter for barrier voltage"); -parameter real delck = 2.0 from (0:10] `ATTR(info="fitting factor for critical current"); - -//Isolation Capacitances -parameter real cbepar = 0.0 from [0:inf) `ATTR(info="Total parasitic B-E capacitance" unit="F"); -parameter real cbcpar = 0.0 from [0:inf) `ATTR(info="Total parasitic B-C capacitance" unit="F"); - -//Non-quasi-static Effect -parameter real alqf = 0.167 from (0:1] `ATTR(info="Factor for additional delay time of minority charge"); -parameter real alit = 0.333 from (0:1] `ATTR(info="Factor for additional delay time of transfer current"); -parameter integer flnqs = 0 from [0:1] `ATTR(info="Flag for turning on and off of vertical NQS effect"); - -//Noise -parameter real kf = 0.0 from [0:inf) `ATTR(info="Flicker noise coefficient"); -parameter real af = 2.0 from (0:10] `ATTR(info="Flicker noise exponent factor"); -parameter integer cfbe = -1 from [-2:-1] `ATTR(info="Flag for determining where to tag the flicker noise source"); -parameter integer flcono = 0 from [0:1] `ATTR(info="Flag for turning on and off of correlated noise implementation"); - - -parameter real kfre = 0.0 from [0:inf) `ATTR(info="Emitter resistance flicker noise coefficient"); -parameter real afre = 2.0 from (0:10] `ATTR(info="Emitter resistance flicker noise exponent factor"); - - -//Lateral Geometry Scaling (at high current densities) -parameter real latb = 0.0 from [0:inf) `ATTR(info="Scaling factor for collector minority charge in direction of emitter width"); -parameter real latl = 0.0 from [0:inf) `ATTR(info="Scaling factor for collector minority charge in direction of emitter length"); - -//Temperature dependence -parameter real vgb = 1.17 from (0:10] `ATTR(info="Bandgap voltage extrapolated to 0 K" unit="V"); -parameter real alt0 = 0.0 `ATTR(info="First order relative TC of parameter T0" unit="1/K"); -parameter real kt0 = 0.0 `ATTR(info="Second order relative TC of parameter T0"); -parameter real zetaci = 0.0 from [-10:10] `ATTR(info="Temperature exponent for RCI0"); -parameter real alvs = 0.0 `ATTR(info="Relative TC of saturation drift velocity" unit="1/K"); -parameter real alces = 0.0 `ATTR(info="Relative TC of VCES" unit="1/K"); -parameter real zetarbi = 0.0 from [-10:10] `ATTR(info="Temperature exponent of internal base resistance"); -parameter real zetarbx = 0.0 from [-10:10] `ATTR(info="Temperature exponent of external base resistance"); -parameter real zetarcx = 0.0 from [-10:10] `ATTR(info="Temperature exponent of external collector resistance"); -parameter real zetare = 0.0 from [-10:10] `ATTR(info="Temperature exponent of emitter resistance"); -parameter real zetacx = 1.0 from [-10:10] `ATTR(info="Temperature exponent of mobility in substrate transistor transit time"); -parameter real vge = 1.17 from (0:10] `ATTR(info="Effective emitter bandgap voltage" unit="V"); -parameter real vgc = 1.17 from (0:10] `ATTR(info="Effective collector bandgap voltage" unit="V"); -parameter real vgs = 1.17 from (0:10] `ATTR(info="Effective substrate bandgap voltage" unit="V"); -parameter real f1vg =-1.02377e-4 `ATTR(info="Coefficient K1 in T-dependent band-gap equation"); -parameter real f2vg = 4.3215e-4 `ATTR(info="Coefficient K2 in T-dependent band-gap equation"); -parameter real zetact = 3.0 from [-10:10] `ATTR(info="Exponent coefficient in transfer current temperature dependence"); -parameter real zetabet = 3.5 from [-10:10] `ATTR(info="Exponent coefficient in B-E junction current temperature dependence"); -parameter real alb = 0.0 `ATTR(info="Relative TC of forward current gain for V2.1 model" unit="1/K"); -parameter real dvgbe = 0 from [-10:10] `ATTR(info="Bandgap difference between B and B-E junction used for hjEi0 and hf0" unit="V"); -parameter real zetahjei = 1 from [-10:10] `ATTR(info="Temperature coefficient for ahjEi"); -parameter real zetavgbe = 1 from [-10:10] `ATTR(info="Temperature coefficient for hjEi0"); - -//Self-Heating -parameter integer flsh = 0 from [0:2] `ATTR(info="Flag for turning on and off self-heating effect"); -parameter real rth = 0.0 from [0:inf) `ATTR(info="Thermal resistance" unit="K/W"); -parameter real zetarth = 0.0 from [-10:10] `ATTR(info="Temperature coefficient for Rth"); -parameter real alrth = 0.0 from [-10:10] `ATTR(info="First order relative TC of parameter Rth" unit="1/K"); -parameter real cth = 0.0 from [0:inf) `ATTR(info="Thermal capacitance" unit="J/W"); - -//Compatibility with V2.1 -parameter real flcomp = 0.0 from [0:inf) `ATTR(info="Flag for compatibility with v2.1 model (0=v2.1)"); - -//Circuit simulator specific parameters -parameter real tnom = 27.0 `ATTR(info="Temperature at which parameters are specified" unit="C"); -parameter real dt = 0.0 `ATTR(info="Temperature change w.r.t. chip temperature for particular transistor" unit="K"); -//parameter integer type = 1 from [-1:1] exclude 0 `ATTR(info="For transistor type NPN(+1) or PNP (-1)"); - -// -//======================== Transistor model formulation =================== -// - - //Declaration of variables - - //Temperature and drift - real VT,Tdev,qtt0,ln_qtt0,r_VgVT,V_gT,dT,k; - real ireis_t,ibeis_t,ibcxs_t,ibcis_t,iscs_t,cjci0_t; - real cjs0_t,rci0_t,vlim_t,vces_t,thcs_t,tef0_t,rbi0_t; - real rbx_t,rcx_t,re_t,t0_t,vdei_t,vdci_t,vpts_t,itss_t,tsf_t; - real c10_t,cjei0_t,qp0_t,vdcx_t,vptcx_t,cjcx01_t,cjcx02_t; - real qjcx0_t_i,qjcx0_t_ii,cratio_t,c_dummy; - real ibeps_t,ireps_t,cjep0_t; - real ajei_t,qavl_t,favl_t,ibets_t,abet_t,vptci_t,vdep_t,ajep_t,zetatef; - real k1,k2,dvg0,vge_t,vgb_t,vgbe_t,vds_t,vt0,Tnom,Tamb,a,avs; - real zetabci,zetabcxt,zetasct,vgbe0,mg,vgb_t0,vge_t0,vgbe_t0,vgbc0,vgsc0; - - real cbcpar1,cbcpar2,cbepar2,cbepar1,Oich,Ovpt,Otbhrec; - - //Charges, capacitances and currents - real Qjci,Qjei,Qjep; - real it,ibei,irei,ibci,ibep,irep,ibh_rec; - real Qdei,Qdci,qrbi; - real ibet,iavl; - real ijbcx,ijsc,Qjs,HSUM,HSI_Tsu,Qdsu; - - //Base resistance and self-heating power - real rbi,pterm,rth_t; - - //Variables for macro TMPHICJ - real vdj0,vdjt,vdt; - - //Model initialization - real k10,k20,C_1; - - //Model evaluation - real Cjci,Cjcit,cc,Cjei,Cjep; - real itf,itr,Tf,Tr,VT_f,i_0f,i_0r,a_bpt,Q_0,Q_p,Q_bpt; - real Orci0_t,b_q,I_Tf1,T_f0,Q_fT,T_fT,Q_bf; - real ICKa,d1,a1,a11,Odelck,ick1,ick2; - real A,a_h,Q_pT,d_Q,d_Q0; - real Qf,Cdei,Qr,Cdci,Crbi; - real ick,vc,vceff,cjcx01,cjcx02,HSa,HSb; - integer l_it; - - //Variables for macros - real DIOY,le;//HICDIO - real FFfcbar,FFitf_ick,FFdQef,FFdTef,FFdQbfb,FFdTbfb,FFdQfhc,FFdTfhc,FFdQbfc,FFdTbfc,FFdQcfc,FFdTcfc,FFdQcfcT,FFdTcfcT,FFib,FFic,FFw,FFdVc,FFdVc_ditf,FFdib_ditf;//HICQFF - real FCz,FCw2,FCf1,FCf2,FCf3,FCf_ci,FCz_1,FCa1,FCa_ck,FCxl,FCxb;//HICQFC - real FCd_a,FCdaick_ditf,FCa,FCw,FCdw_daick,FCdfc_dw,FCdw_ditf,FCdfc_ditf,FCf_CT,FCdfCT_ditf,FCrt,FCln,lnz,FCda1_dw,FCdf1_dw,FCdf2_dw,FCdf3_dw,FCd_f,FCdfCT_dw;//HICQFC - real Dz_r,Dv_p,DV_f,DC_max,DC_c,Da,Dv_e,De,De_1,Dv_j1,Dv_r,De_2,Dv_j2,Dv_j4,DQ_j1,DQ_j2,DQ_j3,DCln1,DCln2,Dz1,Dzr1,DC_j1,DC_j2,DC_j3;//QJMOD - real DFV_f,DFv_e,DFv_j,DFb,DFQ_j,DFs_q,DFs_q2,DFdvj_dv,DFC_j1;//QJMODF - real z,a2,a3,r,x;//HICFCI - real lnzb; //HICFCT - - //Noise - real fourkt,twoq,flicker_Pwr; - real betad,betan,betadin,betadc; - real n_w,n_1,n_2,sqrt_n2; - //NQS - real Ixf1,Ixf2,Qxf1,Qxf2,Vxf1,Vxf2,Itxf,Qdeix; - real Vxf, Ixf, Qxf,fact; - - real hjei_vbe,vj,vj_z; - real hjei0_t, ahjei_t, hf0_t, hfe_t, hfc_t; - - real i_re; - - real Vbiei, Vbici, Vciei, Vbpei, Vbpci, Vbci, Vsici; - // Transistor type switch; npn type =1 - - //end of variables - integer type; -analog begin - - type = 1; - - Vbiei = type*V(br_biei); - Vbici = type*V(br_bici); - Vciei = type*V(br_ciei); - Vbpei = type*V(br_bpei); - Vbpci = type*V(br_bpci); - Vbci = type*V(br_bci); - Vsici = type*V(br_sici); - -`MODEL begin : Model_initialization - - Tnom = tnom+`P_CELSIUS0; - Tamb = $temperature; - vt0 = `P_K*Tnom /`P_Q; - k10 = f1vg*Tnom*ln(Tnom); - k20 = f2vg*Tnom; - avs = alvs*Tnom; - vgb_t0 = vgb+k10+k20; - vge_t0 = vge+k10+k20; - vgbe_t0 = (vgb_t0+vge_t0)/2; - vgbe0 = (vgb+vge)/2; - vgbc0 = (vgb+vgc)/2; - vgsc0 = (vgs+vgc)/2; - mg = 3-`P_Q*f1vg/`P_K; - zetabci = mg+1-zetaci; - zetabcxt= mg+1-zetacx; - zetasct = mg-1.5; - - //Depletion capacitance splitting at b-c junction - //Capacitances at peripheral and external base node - C_1 = (1.0-fbcpar)*(cjcx0+cbcpar); - if (C_1 >= cbcpar) begin - cbcpar1 = cbcpar; - cbcpar2 = 0.0; - cjcx01 = C_1-cbcpar; - cjcx02 = cjcx0-cjcx01; - end else begin - cbcpar1 = C_1; - cbcpar2 = cbcpar-cbcpar1; - cjcx01 = 0.0; - cjcx02 = cjcx0; - end - - //Parasitic b-e capacitance partitioning: No temperature dependence - cbepar2 = fbepar*cbepar; - cbepar1 = cbepar-cbepar2; - - //Avoid divide-by-zero and define infinity other way - //High current correction for 2D and 3D effects - if (ich != 0.0) begin - Oich = 1.0/ich; - end else begin - Oich = 0.0; - end - - //Base current recombination time constant at b-c barrier - if (tbhrec != 0.0) begin - Otbhrec = 1.0/tbhrec; - end else begin - Otbhrec = 0.0; - end - - // Temperature and resulting parameter drift - if (flsh==0 || rth < `MIN_R) begin : Thermal_updat_without_self_heating - Tdev = Tamb+dt; - if(Tdev < `TMIN + 273.15) begin - Tdev = `TMIN + 273.15; - end else begin - if (Tdev > `TMAX + 273.15) begin - Tdev = `TMAX + 273.15; - end - end - VT = `P_K*Tdev /`P_Q; - dT = Tdev-Tnom; - qtt0 = Tdev/Tnom; - ln_qtt0 = ln(qtt0); - k1 = f1vg*Tdev*ln(Tdev); - k2 = f2vg*Tdev; - vgb_t = vgb+k1+k2; - vge_t = vge+k1+k2; - vgbe_t = (vgb_t+vge_t)/2; - - //Internal b-e junction capacitance - `TMPHICJ(cjei0,vdei,zei,ajei,1,vgbe0,cjei0_t,vdei_t,ajei_t) - - if (flcomp == 0.0 || flcomp == 2.1) begin - V_gT = 3.0*VT*ln_qtt0 + vgb*(qtt0-1.0); - r_VgVT = V_gT/VT; - //Internal b-e diode saturation currents - a = mcf*r_VgVT/mbei - alb*dT; - ibeis_t = ibeis*exp(a); - a = mcf*r_VgVT/mrei - alb*dT; - ireis_t = ireis*exp(a); - a = mcf*r_VgVT/mbep - alb*dT; - //Peripheral b-e diode saturation currents - ibeps_t = ibeps*exp(a); - a = mcf*r_VgVT/mrep - alb*dT; - ireps_t = ireps*exp(a); - //Internal b-c diode saturation current - a = r_VgVT/mbci; - ibcis_t = ibcis*exp(a); - //External b-c diode saturation currents - a = r_VgVT/mbcx; - ibcxs_t = ibcxs*exp(a); - //Saturation transfer current for substrate transistor - a = r_VgVT/msf; - itss_t = itss*exp(a); - //Saturation current for c-s diode - a = r_VgVT/msc; - iscs_t = iscs*exp(a); - //Zero bias hole charge - a = vdei_t/vdei; - qp0_t = qp0*(1.0+0.5*zei*(1.0-a)); - //Voltage separating ohmic and saturation velocity regime - a = vlim*(1.0-alvs*dT)*exp(zetaci*ln_qtt0); - k = (a-VT)/VT; - if (k < `LN_EXP_LIMIT) begin - vlim_t = VT + VT*ln(1.0+exp(k)); - end else begin - vlim_t = a; - end - //Neutral emitter storage time - a = 1.0+alb*dT; - k = 0.5*(a+sqrt(a*a+0.01)); - tef0_t = tef0*qtt0/k; - end else begin - //Internal b-e diode saturation currents - ibeis_t = ibeis*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); - if (flcomp>=2.3) begin - ireis_t = ireis*exp(mg/mrei*ln_qtt0+vgbe0/(mrei*VT)*(qtt0-1)); - end else begin - ireis_t = ireis*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1)); - end - //Peripheral b-e diode saturation currents - ibeps_t = ibeps*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); - if (flcomp>=2.3) begin - ireps_t = ireps*exp(mg/mrep*ln_qtt0+vgbe0/(mrep*VT)*(qtt0-1)); - end else begin - ireps_t = ireps*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1)); - end - //Internal b-c diode saturation currents - ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); - //External b-c diode saturation currents - ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1)); - //Saturation transfer current for substrate transistor - itss_t = itss*exp(zetasct*ln_qtt0+vgc/VT*(qtt0-1)); - //Saturation current for c-s diode - iscs_t = iscs*exp(zetasct*ln_qtt0+vgs/VT*(qtt0-1)); - //Zero bias hole charge - a = exp(zei*ln(vdei_t/vdei)); - qp0_t = qp0*(2.0-a); - //Voltage separating ohmic and saturation velocity regime - vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); - //Neutral emitter storage time - if (flcomp >= 2.3) begin - tef0_t = tef0; - end else begin - zetatef = zetabet-zetact-0.5; - dvg0 = vgb-vge; - tef0_t = tef0*exp(zetatef*ln_qtt0-dvg0/VT*(qtt0-1)); - end - end - - //GICCR prefactor - c10_t = c10*exp(zetact*ln_qtt0+vgb/VT*(qtt0-1)); - - // Low-field internal collector resistance - rci0_t = rci0*exp(zetaci*ln_qtt0); - - //Voltage separating ohmic and saturation velocity regime - //vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); - - //Internal c-e saturation voltage - vces_t = vces*(1+alces*dT); - - - //Internal b-c diode saturation current - //ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); - - //Internal b-c junction capacitance - `TMPHICJ(cjci0,vdci,zci,vptci,0,vgbc0,cjci0_t,vdci_t,vptci_t) - - //Low-current forward transit time - t0_t = t0*(1+alt0*dT+kt0*dT*dT); - - //Saturation time constant at high current densities - thcs_t = thcs*exp((zetaci-1)*ln_qtt0); - - - //Avalanche current factors - favl_t = favl*exp(alfav*dT); - qavl_t = qavl*exp(alqav*dT); - - //Zero bias internal base resistance - rbi0_t = rbi0*exp(zetarbi*ln_qtt0); - - - //Peripheral b-e junction capacitance - `TMPHICJ(cjep0,vdep,zep,ajep,1,vgbe0,cjep0_t,vdep_t,ajep_t) - - //Tunneling current factors - begin : HICTUN_T - real a_eg,ab,aa; - ab = 1.0; - aa = 1.0; - a_eg=vgbe_t0/vgbe_t; - if(tunode==1 && cjep0 > 0.0 && vdep >0.0) begin - ab = (cjep0_t/cjep0)*sqrt(a_eg)*vdep_t*vdep_t/(vdep*vdep); - aa = (vdep/vdep_t)*(cjep0/cjep0_t)*pow(a_eg,-1.5); - end else if (tunode==0 && cjei0 > 0.0 && vdei >0.0) begin - ab = (cjei0_t/cjei0)*sqrt(a_eg)*vdei_t*vdei_t/(vdei*vdei); - aa = (vdei/vdei_t)*(cjei0/cjei0_t)*pow(a_eg,-1.5); - end - ibets_t = ibets*ab; - abet_t = abet*aa; - end - - - //Temperature mapping for tunneling current is done inside HICTUN - - `TMPHICJ(1.0,vdcx,zcx,vptcx,0,vgbc0,cratio_t,vdcx_t,vptcx_t) - cjcx01_t=cratio_t*cjcx01; - cjcx02_t=cratio_t*cjcx02; - - - //External b-c diode saturation currents - //ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1)); - - - //Constant external series resistances - rcx_t = rcx*exp(zetarcx*ln_qtt0); - rbx_t = rbx*exp(zetarbx*ln_qtt0); - re_t = re*exp(zetare*ln_qtt0); - - //Forward transit time in substrate transistor - tsf_t = tsf*exp((zetacx-1.0)*ln_qtt0); - - //Capacitance for c-s junction - `TMPHICJ(cjs0,vds,zs,vpts,0,vgsc0,cjs0_t,vds_t,vpts_t) - - ahjei_t = ahjei*exp(zetahjei*ln_qtt0); - hjei0_t = hjei*exp(dvgbe/VT*(exp(zetavgbe*ln(qtt0))-1)); - hf0_t = hf0*exp(dvgbe/VT*(qtt0-1)); - if (flcomp >= 2.3) begin - hfe_t = hfe*exp((vgb-vge)/VT*(qtt0-1)); - hfc_t = hfc*exp((vgb-vgc)/VT*(qtt0-1)); - end else begin - hfe_t = hfe; - hfc_t = hfc; - end - - rth_t = rth*exp(zetarth*ln_qtt0)*(1+alrth*dT); - - end // of Thermal_update_without_self_heating - -end //of Model_initialization - -if (flsh!=0 && rth >= `MIN_R) begin : Thermal_update_with_self_heating - Tdev = Tamb+dt+V(br_sht); - // Limit temperature to avoid FPEs in equations - if(Tdev < `TMIN + 273.15) begin - Tdev = `TMIN + 273.15; - end else begin - if (Tdev > `TMAX + 273.15) begin - Tdev = `TMAX + 273.15; - end - end - VT = `P_K*Tdev /`P_Q; - dT = Tdev-Tnom; - qtt0 = Tdev/Tnom; - ln_qtt0 = ln(qtt0); - k1 = f1vg*Tdev*ln(Tdev); - k2 = f2vg*Tdev; - vgb_t = vgb+k1+k2; - vge_t = vge+k1+k2; - vgbe_t = (vgb_t+vge_t)/2; - - //Internal b-e junction capacitance - `TMPHICJ(cjei0,vdei,zei,ajei,1,vgbe0,cjei0_t,vdei_t,ajei_t) - - if (flcomp == 0.0 || flcomp == 2.1) begin - V_gT = 3.0*VT*ln_qtt0 + vgb*(qtt0-1.0); - r_VgVT = V_gT/VT; - //Internal b-e diode saturation currents - a = mcf*r_VgVT/mbei - alb*dT; - ibeis_t = ibeis*exp(a); - a = mcf*r_VgVT/mrei - alb*dT; - ireis_t = ireis*exp(a); - a = mcf*r_VgVT/mbep - alb*dT; - //Peripheral b-e diode saturation currents - ibeps_t = ibeps*exp(a); - a = mcf*r_VgVT/mrep - alb*dT; - ireps_t = ireps*exp(a); - //Internal b-c diode saturation current - a = r_VgVT/mbci; - ibcis_t = ibcis*exp(a); - //External b-c diode saturation currents - a = r_VgVT/mbcx; - ibcxs_t = ibcxs*exp(a); - //Saturation transfer current for substrate transistor - a = r_VgVT/msf; - itss_t = itss*exp(a); - //Saturation current for c-s diode - a = r_VgVT/msc; - iscs_t = iscs*exp(a); - //Zero bias hole charge - a = vdei_t/vdei; - qp0_t = qp0*(1.0+0.5*zei*(1.0-a)); - //Voltage separating ohmic and saturation velocity regime - a = vlim*(1.0-alvs*dT)*exp(zetaci*ln_qtt0); - k = (a-VT)/VT; - if (k < `LN_EXP_LIMIT) begin - vlim_t = VT + VT*ln(1.0+exp(k)); - end else begin - vlim_t = a; - end - //Neutral emitter storage time - a = 1.0+alb*dT; - k = 0.5*(a+sqrt(a*a+0.01)); - tef0_t = tef0*qtt0/k; - end else begin - //Internal b-e diode saturation currents - ibeis_t = ibeis*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); - if (flcomp>=2.3) begin - ireis_t = ireis*exp(mg/mrei*ln_qtt0+vgbe0/(mrei*VT)*(qtt0-1)); - end else begin - ireis_t = ireis*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1)); - end - //Peripheral b-e diode saturation currents - ibeps_t = ibeps*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); - if (flcomp>=2.3) begin - ireps_t = ireps*exp(mg/mrep*ln_qtt0+vgbe0/(mrep*VT)*(qtt0-1)); - end else begin - ireps_t = ireps*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1)); - end - //Internal b-c diode saturation currents - ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); - //External b-c diode saturation currents - ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1)); - //Saturation transfer current for substrate transistor - itss_t = itss*exp(zetasct*ln_qtt0+vgc/VT*(qtt0-1)); - //Saturation current for c-s diode - iscs_t = iscs*exp(zetasct*ln_qtt0+vgs/VT*(qtt0-1)); - //Zero bias hole charge - a = exp(zei*ln(vdei_t/vdei)); - qp0_t = qp0*(2.0-a); - //Voltage separating ohmic and saturation velocity regime - vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); - //Neutral emitter storage time - if (flcomp >= 2.3) begin - tef0_t = tef0; - end else begin - zetatef = zetabet-zetact-0.5; - dvg0 = vgb-vge; - tef0_t = tef0*exp(zetatef*ln_qtt0-dvg0/VT*(qtt0-1)); - end - end - - //GICCR prefactor - c10_t = c10*exp(zetact*ln_qtt0+vgb/VT*(qtt0-1)); - - // Low-field internal collector resistance - rci0_t = rci0*exp(zetaci*ln_qtt0); - - //Voltage separating ohmic and saturation velocity regime - //vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); - - //Internal c-e saturation voltage - vces_t = vces*(1+alces*dT); - - - //Internal b-c diode saturation current - //ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); - - //Internal b-c junction capacitance - `TMPHICJ(cjci0,vdci,zci,vptci,0,vgbc0,cjci0_t,vdci_t,vptci_t) - - //Low-current forward transit time - t0_t = t0*(1+alt0*dT+kt0*dT*dT); - - //Saturation time constant at high current densities - thcs_t = thcs*exp((zetaci-1)*ln_qtt0); - - - //Avalanche current factors - favl_t = favl*exp(alfav*dT); - qavl_t = qavl*exp(alqav*dT); - - //Zero bias internal base resistance - rbi0_t = rbi0*exp(zetarbi*ln_qtt0); - - - //Peripheral b-e junction capacitance - `TMPHICJ(cjep0,vdep,zep,ajep,1,vgbe0,cjep0_t,vdep_t,ajep_t) - - //Tunneling current factors - if (Vbpei < 0.0 || Vbiei < 0.0) begin : HICTUN_T - real a_eg,ab,aa; - ab = 1.0; - aa = 1.0; - a_eg=vgbe_t0/vgbe_t; - if(tunode==1 && cjep0 > 0.0 && vdep >0.0) begin - ab = (cjep0_t/cjep0)*sqrt(a_eg)*vdep_t*vdep_t/(vdep*vdep); - aa = (vdep/vdep_t)*(cjep0/cjep0_t)*pow(a_eg,-1.5); - end else if (tunode==0 && cjei0 > 0.0 && vdei >0.0) begin - ab = (cjei0_t/cjei0)*sqrt(a_eg)*vdei_t*vdei_t/(vdei*vdei); - aa = (vdei/vdei_t)*(cjei0/cjei0_t)*pow(a_eg,-1.5); - end - ibets_t = ibets*ab; - abet_t = abet*aa; - end - - - //Temperature mapping for tunneling current is done inside HICTUN - - `TMPHICJ(1.0,vdcx,zcx,vptcx,0,vgbc0,cratio_t,vdcx_t,vptcx_t) - cjcx01_t=cratio_t*cjcx01; - cjcx02_t=cratio_t*cjcx02; - - - //External b-c diode saturation currents - //ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1)); - - - //Constant external series resistances - rcx_t = rcx*exp(zetarcx*ln_qtt0); - rbx_t = rbx*exp(zetarbx*ln_qtt0); - re_t = re*exp(zetare*ln_qtt0); - - //Forward transit time in substrate transistor - tsf_t = tsf*exp((zetacx-1.0)*ln_qtt0); - - //Capacitance for c-s junction - `TMPHICJ(cjs0,vds,zs,vpts,0,vgsc0,cjs0_t,vds_t,vpts_t) - - ahjei_t = ahjei*exp(zetahjei*ln_qtt0); - hjei0_t = hjei*exp(dvgbe/VT*(exp(zetavgbe*ln(qtt0))-1)); - hf0_t = hf0*exp(dvgbe/VT*(qtt0-1)); - if (flcomp >= 2.3) begin - hfe_t = hfe*exp((vgb-vge)/VT*(qtt0-1)); - hfc_t = hfc*exp((vgb-vgc)/VT*(qtt0-1)); - end else begin - hfe_t = hfe; - hfc_t = hfc; - end - - rth_t = rth*exp(zetarth*ln_qtt0)*(1+alrth*dT); - -end //of Thermal_update_with_self_heating - - -begin : Model_evaluation - - //Intrinsic transistor - //Internal base currents across b-e junction - `HICDIO(ibeis,ibeis_t,mbei,Vbiei,ibei) - `HICDIO(ireis,ireis_t,mrei,Vbiei,irei) - - //HICCR: begin - - //Inverse of low-field internal collector resistance: needed in HICICK - Orci0_t = 1.0/rci0_t; - - //Initialization - //Transfer current, minority charges and transit times - - Tr = tr; - VT_f = mcf*VT; - i_0f = c10_t * limexp(Vbiei/VT_f); - i_0r = c10_t * limexp(Vbici/VT); - - //Internal b-e and b-c junction capacitances and charges - //`QJMODF(cjei0_t,vdei_t,zei,ajei_t,V(br_biei),Qjei) - //Cjei = ddx(Qjei,V(bi)); - `QJMODF(cjei0_t,vdei_t,zei,ajei_t,Vbiei,Cjei,Qjei) - if (ahjei == 0.0) begin - hjei_vbe = hjei; - end else begin - //vendhjei = vdei_t*(1.0-exp(-ln(ajei_t)/z_h)); - vj = (vdei_t-Vbiei)/(rhjei*VT); - vj = vdei_t-rhjei*VT*(vj+sqrt(vj*vj+`DFa_fj))*0.5; - vj = (vj-VT)/VT; - vj = VT*(1.0+(vj+sqrt(vj*vj+`DFa_fj))*0.5); - vj_z = (1.0-exp(zei*ln(1.0-vj/vdei_t)))*ahjei_t; - hjei_vbe = hjei0_t*(exp(vj_z)-1.0)/vj_z; - end - - - - //`HICJQ(cjci0_t,vdci_t,zci,vptci_t,V(br_bici),Qjci) - //Cjci = ddx(Qjci,V(bi)); - `HICJQ(cjci0_t,vdci_t,zci,vptci_t,Vbici,Cjci,Qjci) - - //Hole charge at low bias - a_bpt = 0.05; - Q_0 = qp0_t + hjei_vbe*Qjei + hjci*Qjci; - Q_bpt = a_bpt*qp0_t; - b_q = Q_0/Q_bpt-1; - Q_0 = Q_bpt*(1+(b_q +sqrt(b_q*b_q+1.921812))/2); - - //Transit time calculation at low current density - if(cjci0_t > 0.0) begin : CJMODF - real cV_f,cv_e,cs_q,cs_q2,cv_j,cdvj_dv; - cV_f = vdci_t*(1.0-exp(-ln(2.4)/zci)); - cv_e = (cV_f-Vbici)/VT; - cs_q = sqrt(cv_e*cv_e+1.921812); - cs_q2 = (cv_e+cs_q)*0.5; - cv_j = cV_f-VT*cs_q2; - cdvj_dv = cs_q2/cs_q; - Cjcit = cjci0_t*exp(-zci*ln(1.0-cv_j/vdci_t))*cdvj_dv+2.4*cjci0_t*(1.0-cdvj_dv); - end else begin - Cjcit = 0.0; - end - if(Cjcit > 0.0) begin - cc = cjci0_t/Cjcit; - end else begin - cc = 1.0; - end - T_f0 = t0_t+dt0h*(cc-1.0)+tbvl*(1/cc-1.0); - - //Effective collector voltage - vc = Vciei-vces_t; - - //Critical current for onset of high-current effects - begin : HICICK - Ovpt = 1.0/vpt; - a = vc/VT; - d1 = a-1; - vceff = (1.0+((d1+sqrt(d1*d1+1.921812))/2))*VT; - // a = vceff/vlim_t; - // ick = vceff*Orci0_t/sqrt(1.0+a*a); - // ICKa = (vceff-vlim_t)*Ovpt; - // ick = ick*(1.0+0.5*(ICKa+sqrt(ICKa*ICKa+1.0e-3))); - - a1 = vceff/vlim_t; - a11 = vceff*Orci0_t; - Odelck = 1/delck; - ick1 = exp(Odelck*ln(1+exp(delck*ln(a1)))); - ick2 = a11/ick1; - ICKa = (vceff-vlim_t)*Ovpt; - ick = ick2*(1.0+0.5*(ICKa+sqrt(ICKa*ICKa+1.0e-3))); - - end - - //Initial formulation of forward and reverse component of transfer current - Q_p = Q_0; - if (T_f0 > 0.0 || Tr > 0.0) begin - A = 0.5*Q_0; - Q_p = A+sqrt(A*A+T_f0*i_0f+Tr*i_0r); - end - I_Tf1 =i_0f/Q_p; - a_h = Oich*I_Tf1; - itf = I_Tf1*(1.0+a_h); - itr = i_0r/Q_p; - - //Initial formulation of forward transit time, diffusion, GICCR and excess b-c charge - Q_bf = 0.0; - Tf = T_f0; - Qf = T_f0*itf; - `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf) - - //Initial formulation of reverse diffusion charge - Qr = Tr*itr; - - //Preparation for iteration to get total hole charge and related variables - l_it = 0; - if(Qf > `RTOLC*Q_p || a_h > `RTOLC) begin - //Iteration for Q_pT is required for improved initial solution - Qf = sqrt(T_f0*itf*Q_fT); - Q_pT = Q_0+Qf+Qr; - d_Q = Q_pT; - while (abs(d_Q) >= `RTOLC*abs(Q_pT) && l_it <= `l_itmax) begin - d_Q0 = d_Q; - I_Tf1 = i_0f/Q_pT; - a_h = Oich*I_Tf1; - itf = I_Tf1*(1.0+a_h); - itr = i_0r/Q_pT; - Tf = T_f0; - Qf = T_f0*itf; - `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf) - Qr = Tr*itr; - if(Oich == 0.0) begin - a = 1.0+(T_fT*itf+Qr)/Q_pT; - end else begin - a = 1.0+(T_fT*I_Tf1*(1.0+2.0*a_h)+Qr)/Q_pT; - end - d_Q = -(Q_pT-(Q_0+Q_fT+Qr))/a; - //Limit maximum change of Q_pT - a = abs(0.3*Q_pT); - if(abs(d_Q) > a) begin - if (d_Q>=0) begin - d_Q = a; - end else begin - d_Q = -a; - end - end - Q_pT = Q_pT+d_Q; - l_it = l_it+1; - end //while - - I_Tf1 = i_0f/Q_pT; - a_h = Oich*I_Tf1; - itf = I_Tf1*(1.0+a_h); - itr = i_0r/Q_pT; - - //Final transit times, charges and transport current components - Tf = T_f0; - Qf = T_f0*itf; - `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf) - Qr = Tr*itr; - - end //if - - //NQS effect implemented with LCR networks - //Once the delay in ITF is considered, IT_NQS is calculated afterwards - - it = itf-itr; - - //Diffusion charges for further use - Qdei = Qf; - Qdci = Qr; - - - //High-frequency emitter current crowding (lateral NQS) - Cdei = T_f0*itf/VT; - Cdci = tr*itr/VT; - Crbi = fcrbi*(Cjei+Cjci+Cdei+Cdci); - qrbi = Crbi*V(br_bpbi_v); - - // qrbi = fcrbi*(Qjei+Qjci+Qdei+Qdci); - - //HICCR: end - - //Internal base current across b-c junction - `HICDIO(ibcis,ibcis_t,mbci,Vbici,ibci) - - //Avalanche current - if((Vbici < 0.0) && (favl_t > 0.0) && (cjci0_t > 0.0)) begin : HICAVL - real v_bord,v_q,U0,av,avl; - v_bord = vdci_t-Vbici; - v_q = qavl_t/Cjci; - U0 = qavl_t/cjci0_t; - if(v_bord > U0) begin - av = favl_t*exp(-v_q/U0); - avl = av*(U0+(1.0+v_q/U0)*(v_bord-U0)); - end else begin - avl = favl_t*v_bord*exp(-v_q/v_bord); - end - iavl = itf*avl; - end else begin - iavl = 0.0; - end - - //Excess base current from recombination at the b-c barrier - ibh_rec = Q_bf*Otbhrec; - - //Internal base resistance - if(rbi0_t > 0.0) begin : HICRBI - real Qz_nom,f_QR,ETA,Qz0,fQz; - // Consideration of conductivity modulation - // To avoid convergence problem hyperbolic smoothing used - f_QR = (1+fdqr0)*qp0_t; - Qz0 = Qjei+Qjci+Qf; - Qz_nom = 1+Qz0/f_QR; - fQz = 0.5*(Qz_nom+sqrt(Qz_nom*Qz_nom+0.01)); - rbi = rbi0_t/fQz; - // Consideration of emitter current crowding - if( ibei > 0.0) begin - ETA = rbi*ibei*fgeo/VT; - if(ETA < 1.0e-6) begin - rbi = rbi*(1.0-0.5*ETA); - end else begin - rbi = rbi*ln(1.0+ETA)/ETA; - end - end - // Consideration of peripheral charge - if(Qf > 0.0) begin - rbi = rbi*(Qjei+Qf*fqi)/(Qjei+Qf); - end - end else begin - rbi = 0.0; - end - - //Base currents across peripheral b-e junction - `HICDIO(ibeps,ibeps_t,mbep,Vbpei,ibep) - `HICDIO(ireps,ireps_t,mrep,Vbpei,irep) - - //Peripheral b-e junction capacitance and charge - `QJMODF(cjep0_t,vdep_t,zep,ajep_t,Vbpei,Cjep,Qjep) - - //Tunneling current - if (Vbpei <0.0 || Vbiei < 0.0) begin : HICTUN - real pocce,czz; - if(tunode==1 && cjep0_t > 0.0 && vdep_t >0.0) begin - pocce = exp((1-1/zep)*ln(Cjep/cjep0_t)); - czz = -(Vbpei/vdep_t)*ibets_t*pocce; - ibet = czz*exp(-abet_t/pocce); - end else if (tunode==0 && cjei0_t > 0.0 && vdei_t >0.0) begin - pocce = exp((1-1/zei)*ln(Cjei/cjei0_t)); - czz = -(Vbiei/vdei_t)*ibets_t*pocce; - ibet = czz*exp(-abet_t/pocce); - end else begin - ibet = 0.0; - end - end else begin - ibet = 0.0; - end - - - //Depletion capacitance and charge at peripheral b-c junction (bp,ci) - `HICJQ(cjcx02_t,vdcx_t,zcx,vptcx_t,Vbpci,c_dummy,qjcx0_t_ii) - - //Base currents across peripheral b-c junction (bp,ci) - `HICDIO(ibcxs,ibcxs_t,mbcx,Vbpci,ijbcx) - - //Depletion capacitance and charge at external b-c junction (b,ci) - `HICJQ(cjcx01_t,vdcx_t,zcx,vptcx_t,Vbci,c_dummy,qjcx0_t_i) - - //Depletion substrate capacitance and charge at s-c junction (si,ci) - `HICJQ(cjs0_t,vds_t,zs,vpts_t,Vsici,c_dummy,Qjs) - - //Parasitic substrate transistor transfer current and diffusion charge - if(itss > 0.0) begin : Sub_Transfer - HSUM = msf*VT; - HSa = limexp(Vbpci/HSUM); - HSb = limexp(Vsici/HSUM); - HSI_Tsu = itss_t*(HSa-HSb); - if(tsf > 0.0) begin - Qdsu = tsf_t*itss_t*HSa; - end else begin - Qdsu = 0.0; - end - end else begin - HSI_Tsu = 0.0; - Qdsu = 0.0; - end - - // Current gain computation for correlated noise implementation - betad=ibei; - if (betad > 0.0) begin - betadin=betad; - betan=it; - betadc=betan/betad; - end else begin - betadc=0.0; - end - - //Diode current for s-c junction (si,ci) - `HICDIO(iscs,iscs_t,msc,Vsici,ijsc) - - //Self-heating calculation - if (flsh == 1 && rth >= `MIN_R) begin - pterm = Vciei*it + (vdci_t-Vbici)*iavl; - end else if (flsh == 2 && rth >= `MIN_R) begin - pterm = Vciei*it + (vdci_t-Vbici)*iavl + ibei*Vbiei + ibci*Vbici + ibep*Vbpei + ijbcx*Vbpci + ijsc*Vsici; - if (rbi >= `MIN_R) begin - pterm = pterm + V(br_bpbi_i)*V(br_bpbi_i)/rbi; - end - if (re_t >= `MIN_R) begin - pterm = pterm + V(br_eie_i)*V(br_eie_i)/re_t; - end - if (rcx_t >= `MIN_R) begin - pterm = pterm + V(br_cic_i)*V(br_cic_i)/rcx_t; - end - if (rbx_t >= `MIN_R) begin - pterm = pterm + V(br_bbp_i)*V(br_bbp_i)/rbx_t; - end - end - - Itxf = itf; - Qdeix = Qdei; - // Excess Phase calculation - - if (flnqs != 0 && Tf != 0) begin - Vxf1 = V(br_bxf1); - Vxf2 = V(br_bxf2); - - Ixf1 = (Vxf2-itf)/Tf*t0; - Ixf2 = (Vxf2-Vxf1)/Tf*t0; - Qxf1 = alit*Vxf1*t0; - Qxf2 = alit*Vxf2/3*t0; - Itxf = Vxf2; - - Vxf = V(br_bxf); //for RC nw - fact = t0/Tf; //for RC nw - Ixf = (Vxf - Qdei)*fact; //for RC nw - Qxf = alqf*Vxf*t0; //for RC nw - Qdeix = Vxf; //for RC nw - end else begin - Ixf1 = V(br_bxf1); - Ixf2 = V(br_bxf2); - Qxf1 = 0; - Qxf2 = 0; - - Ixf = V(br_bxf); - Qxf = 0; - end - -end //of Model_evaluation - -begin : Load_sources - - I(br_biei) <+ `Gmin*V(br_biei); - I(br_bici) <+ `Gmin*V(br_bici); - I(br_ciei) <+ `Gmin*V(br_ciei); - - I(br_bci) <+ ddt(type*qjcx0_t_i); - I(br_bci) <+ ddt(cbcpar1*V(br_bci)); - I(br_bpci) <+ ddt(cbcpar2*V(br_bpci)); - if (rbx >= `MIN_R) begin - I(br_bbp_i) <+ V(br_bbp_i)/rbx_t; - end else begin - I(br_bbp_i) <+ V(br_bbp_i)/1e-6; - //V(br_bbp_v) <+ 0.0; - end - if(rbi0 >= `MIN_R) begin - I(br_bpbi_i) <+ V(br_bpbi_i)/rbi; - I(br_bpbi_i) <+ ddt(qrbi); - end else begin - I(br_bpbi_i) <+ V(br_bpbi_i)/1e-6; - // V(br_bpbi_v) <+ 0.0; - end - if (tunode==1.0) begin - I(br_bpei) <+ -type*ibet; - end else begin - I(br_biei) <+ -type*ibet; - end - I(br_bpei) <+ type*ibep; - I(br_bpei) <+ type*irep; - I(br_bpei) <+ ddt(type*Qjep); - I(br_biei) <+ type*ibei; - I(br_biei) <+ type*irei; - I(br_biei) <+ type*ibh_rec; - I(br_biei) <+ ddt(type*(Qdeix+Qjei)); - I(br_bpsi) <+ type*HSI_Tsu; - I(br_bpci) <+ type*ijbcx; - I(br_bpci) <+ ddt(type*(qjcx0_t_ii+Qdsu)); - I(br_be) <+ ddt(cbepar1*V(br_be)); - I(br_bpe) <+ ddt(cbepar2*V(br_bpe)); - I(br_bici) <+ type*(ibci-iavl); - I(br_bici) <+ ddt(type*(Qdci+Qjci)); - I(br_sici) <+ type*ijsc; - I(br_sici) <+ ddt(type*Qjs); - I(br_ciei) <+ type*Itxf; - I(br_eici) <+ type*itr; - if (rcx >= `MIN_R) begin - I(br_cic_i) <+ V(br_cic_i)/rcx_t; - end else begin - I(br_cic_i) <+ V(br_cic_i)/1e-6; - //V(br_cic_v) <+ 0.0; - end - if (re >= `MIN_R) begin - I(br_eie_i) <+ V(br_eie_i)/re_t; - end else begin - I(br_eie_i) <+ V(br_eie_i)/1e-6; - //V(br_eie_v) <+ 0.0; - end - if(rsu >= `MIN_R) begin - I(br_sis_i) <+ V(br_sis_i)/rsu; - I(br_sis_i) <+ ddt(csu*V(br_sis_i)); - end else begin - I(br_sis_i) <+ V(br_sis_i)/1e-6; - //V(br_sis_v) <+ 0.0; - end - - // Following code is an intermediate solution (if branch contribution is not supported): - // ****************************************** - if(flsh == 0 || rth < `MIN_R) begin - I(br_sht) <+ V(br_sht)/`MIN_R; - end else begin - I(br_sht) <+ V(br_sht)/rth_t-pterm; - I(br_sht) <+ ddt(cth*V(br_sht)); - end - - // ****************************************** - - // For simulators having no problem with V(br_sht) <+ 0.0 - // with external thermal node, following code may be used. - // Note that external thermal node should remain accessible - // even without self-heating. - // ******************************************** - //if(flsh == 0 || rth < `MIN_R) begin - // V(br_sht) <+ 0.0; - //end else begin - // I(br_sht) <+ V(br_sht)/rth_t-pterm; - // I(br_sht) <+ ddt(cth*V(br_sht)); - //end - // ******************************************** - - // NQS effect - I(br_bxf1) <+ Ixf1; - I(br_cxf1) <+ ddt(Qxf1); - I(br_bxf2) <+ Ixf2; - I(br_cxf2) <+ ddt(Qxf2); - - I(br_bxf) <+ Ixf; //for RC nw - I(br_cxf) <+ ddt(Qxf); //for RC nw - -end //of Load_sources - - -`NOISE begin : Noise_sources - - //Thermal noise - fourkt = 4.0 * `P_K * Tdev; - if(rbx >= `MIN_R) begin - I(br_bbp_i) <+ white_noise(fourkt/rbx_t, "thermal"); - end - if(rbi0 >= `MIN_R) begin - I(br_bpbi_i) <+ white_noise(fourkt/rbi, "thermal"); - end - if(rcx >= `MIN_R) begin - I(br_cic_i) <+ white_noise(fourkt/rcx_t, "thermal"); - end - if(re >= `MIN_R) begin - I(br_eie_i) <+ white_noise(fourkt/re_t, "thermal"); - end - if(rsu >= `MIN_R) begin - I(br_sis_i) <+ white_noise(fourkt/rsu, "thermal"); - end - - //Flicker noise : Fully correlated between the perimeter and internal base-node - flicker_Pwr = kf*pow((ibei+ibep),af); - if (cfbe == -1) begin - I(br_biei) <+ flicker_noise(flicker_Pwr,1.0); - end else begin - I(br_bpei) <+ flicker_noise(flicker_Pwr,1.0); - end - - if (re >= `MIN_R) begin - i_re = V(br_eie_i)/re_t; - flicker_Pwr = kfre*pow(abs(i_re),afre); - I(br_eie_i) <+ flicker_noise(flicker_Pwr,1.0); - end - - //Shot noise - - twoq = 2.0 * `P_Q; - // I(br_ciei) <+ white_noise(twoq*it, "shot"); - I(br_cibi) <+ white_noise(twoq*iavl, "shot"); - - // I(br_biei) <+ white_noise(twoq*ibei, "shot"); - - I(br_bici) <+ white_noise(twoq*abs(ibci), "shot"); - - I(br_bpei) <+ white_noise(twoq*ibep, "shot"); - - I(br_bpci) <+ white_noise(twoq*abs(ijbcx), "shot"); - - I(br_sici) <+ white_noise(twoq*abs(ijsc), "shot"); - - // Code section for correlated noise - - if ( flcono==1) begin - - // parameter definition - n_w = 1; - n_1 = Tf*alit; - sqrt_n2 = betadc*(2*alqf-alit*alit); - - if (sqrt_n2 > 0.0) begin - n_2 = Tf*sqrt(sqrt_n2); - end else begin - n_2 = 0; - end - - - // realization of modified base shot noise source I1(bi,ei) - I(b_n1) <+ white_noise(2*`P_Q*ibei,"shot"); - I(b_n1) <+ -V(b_n1); - I(bi,ei) <+ V(b_n1)+n_2/n_w*ddt(n_w*V(b_n1)); - - // realization of controlled base noise source I2(bi,ei) - - I(bi,ei) <+ n_1/n_w*ddt(n_w*V(b_n2)); - - // realization of modified collector shot noise source I(ci,ei) (uncontrolled) - - I(b_n2) <+ white_noise(2*`P_Q*it,"shot"); - I(b_n2) <+ -V(b_n2); - I(ci,ei) <+ V(b_n2); - - - // end "Correlated noise in BJT" - - - end else begin - - // Applying the base & collector shot noise sources to appropriate branches - - I(br_ciei) <+ white_noise(twoq*it, "shot"); - I(br_biei) <+ white_noise(twoq*ibei, "shot"); - I(b_n1) <+ V(b_n1); - I(b_n2) <+ V(b_n2); - - end // end of flcono section - - -end //of Noise_sources - -end //analog -endmodule diff --git a/qucs-core/src/converter/check_spice.cpp b/qucs-core/src/converter/check_spice.cpp index 04920339b3..7455ac324f 100644 --- a/qucs-core/src/converter/check_spice.cpp +++ b/qucs-core/src/converter/check_spice.cpp @@ -642,68 +642,6 @@ static void spice_adjust_device (struct definition_t * def, // adjust type of device free (def->type); - bool hic = false; - // check for HICUM transistors - if (!strcmp (tran->trans_type, "BJT")) { - struct pair_t * p1, * p2; - if ((p1 = spice_find_property (def, "LEVEL")) != NULL) { - double level = spice_evaluate_value (p1->value); - def->pairs = spice_del_property (def->pairs, p1); - if ((p2 = spice_find_property (def, "VERSION")) != NULL) { - double version = spice_evaluate_value (p2->value); - def->pairs = spice_del_property (def->pairs, p2); - if (level == 0) { - if (version >= 1.11) { - if (version >= 1.2e9) - def->type = strdup ("hicumL0V1p2g"); - else if (version >= 1.3) - def->type = strdup ("hicumL0V1p3"); - else if (version >= 1.2) - def->type = strdup ("hicumL0V1p2"); - else - def->type = strdup ("hic0_full"); - if (tran->trans_type_prop != NULL) { - spice_set_property_string (def, "Type", - tran->trans_type_prop); - } - hic = true; - } - } - else if (level == 2 && version == 2.1) { - def->type = strdup ("hicumL2V2p1"); - hic = true; - } - else if (level == 2 && version >= 2.21 && version <= 2.22) { - def->type = strdup ("hic2_full"); - hic = true; - } - else if (level == 2 && version == 2.23) { - def->type = strdup ("hicumL2V2p23"); - hic = true; - } - else if (level == 2 && version == 2.24) { - def->type = strdup ("hicumL2V2p24"); - hic = true; - } - else if (level == 2 && (version == 2.31 || version == 2.31e-9) ) { - def->type = strdup ("hicumL2V2p31n"); - hic = true; - } - else { - fprintf (stderr, "spice error, no such BJT level `%1.0f' and " - "version `%.2e' as referenced by %s\n", level, version, def->instance); - spice_errors++; - } - } - } - } - if (!hic) { - def->type = strdup (tran->trans_type); - // append "Type" property - if (tran->trans_type_prop != NULL) { - spice_set_property_string (def, "Type", tran->trans_type_prop); - } - } break; } } @@ -814,15 +752,6 @@ node_translations[] = { { 1, 2, -1 } }, { "Iac", 0, - { 2, 1, -1 }, - { 1, 2, -1 } - }, - { "Idc", 0, - { 2, 1, -1 }, - { 1, 2, -1 } - }, - { "VCCS", 0, - { 3, 1, 2, 4, -1 }, { 1, 2, 3, 4, -1 } }, { "VCVS", 0, diff --git a/qucs-core/src/converter/qucs_producer.cpp b/qucs-core/src/converter/qucs_producer.cpp index cb37616d13..58daf7ec6b 100644 --- a/qucs-core/src/converter/qucs_producer.cpp +++ b/qucs-core/src/converter/qucs_producer.cpp @@ -295,175 +295,6 @@ qucs_devices[] = { "1 0 0 8 -26 0 0", NULL }, - /* hicum/l0 bipolar transistor */ - { "hic0_full", "hic0_full", "Q", 5, - { "Type", "is", "mcf", "mcr", "vef", "iqf", "iqr", "iqfh", "tfh", "ibes", - "mbe", "ires", "mre", "ibcs", "mbc", "cje0", "vde", "ze", "aje", "t0", - "dt0h", "tbvl", "tef0", "gte", "thcs", "ahc", "tr", "rci0", "vlim", - "vpt", "vces", "cjci0", "vdci", "zci", "vptci", "cjcx0", "vdcx", "zcx", - "vptcx", "fbc", "rbi0", "vr0e", "vr0c", "fgeo", "rbx", "rcx", "re", - "itss", "msf", "iscs", "msc", "cjs0", "vds", "zs", "vpts", "cbcpar", - "cbepar", "eavl", "kavl", "kf", "af", "vgb", "vge", "vgc", "vgs", - "f1vg", "f2vg", "alt0", "kt0", "zetact", "zetabet", "zetaci", "alvs", - "alces", "zetarbi", "zetarbx", "zetarcx", "zetare", "alkav", "aleav", - "flsh", "rth", "cth", "tnom", "dt", "Temp", NULL }, - NULL, - "1 0 0 8 -26 0 0", - NULL - }, - /* hicum/l0 v1.2 bipolar transistor */ - { "hicumL0V1p2", "hicumL0V1p2", "Q", 5, - { "Type", "is", "mcf", "mcr", "vef", "ver", "iqf", "fiqf", "iqr", "iqfh", - "tfh", "ahq", "ibes", "mbe", "ires", "mre", "ibcs", "mbc", "cje0", "vde", - "ze", "aje", "vdedc", "zedc", "ajedc", "t0", "dt0h", "tbvl", "tef0", - "gte", "thcs", "ahc", "tr", "rci0", "vlim", "vpt", "vces", "cjci0", - "vdci", "zci", "vptci", "cjcx0", "vdcx", "zcx", "vptcx", "fbc", "rbi0", - "vr0e", "vr0c", "fgeo", "rbx", "rcx", "re", "itss", "msf", "iscs", "msc", - "cjs0", "vds", "zs", "vpts", "cbcpar", "cbepar", "eavl", "kavl", "kf", - "af", "vgb", "vge", "vgc", "vgs", "f1vg", "f2vg", "alt0", "kt0", - "zetact", "zetabet", "zetaci", "alvs", "alces", "zetarbi", "zetarbx", - "zetarcx", "zetare", "zetaiqf", "alkav", "aleav", "zetarth", "flsh", - "rth", "cth", "tnom", "dt", "Temp", NULL }, - NULL, - "1 0 0 8 -26 0 0", - NULL - }, - /* hicum/l0 v1.2g bipolar transistor */ - { "hicumL0V1p2g", "hicumL0V1p2g", "Q", 5, - { "Type", "is", "mcf", "mcr", "vef", "ver", "iqf", "fiqf", "iqr", "iqfh", - "iqfe", "ahq", "ibes", "mbe", "ires", "mre", "ibcs", "mbc", "cje0", - "vde", "ze", "aje", "vdedc", "zedc", "ajedc", "t0", "dt0h", "tbvl", - "tef0", "gte", "thcs", "ahc", "tr", "rci0", "vlim", "vpt", "vces", - "cjci0", "vdci", "zci", "vptci", "cjcx0", "vdcx", "zcx", "vptcx", "fbc", - "rbi0", "vr0e", "vr0c", "fgeo", "rbx", "rcx", "re", "itss", "msf", - "iscs", "msc", "cjs0", "vds", "zs", "vpts", "cbcpar", "cbepar", "eavl", - "kavl", "kf", "af", "vgb", "vge", "vgc", "vgs", "f1vg", "f2vg", "alt0", - "kt0", "zetact", "zetabet", "zetaci", "alvs", "alces", "zetarbi", - "zetarbx", "zetarcx", "zetare", "zetaiqf", "alkav", "aleav", "flsh", - "rth", "zetarth", "cth", "tnom", "dt", "delte", "deltc", "zetaver", - "zetavef", "ibhrec", "Temp", NULL }, - NULL, - "1 0 0 8 -26 0 0", - NULL - }, - /* hicum/l0 v1.3 bipolar transistor */ - { "hicumL0V1p3", "hicumL0V1p3", "Q", 5, - { "Type", "is", "it_mod", "mcf", "mcr", "vef", "ver", "aver", "iqf", - "fiqf", "iqr", "iqfh", "tfh", "ahq", "ibes", "mbe", "ires", "mre", - "ibcs", "mbc", "cje0", "vde", "ze", "aje", "vdedc", "zedc", "ajedc", - "t0", "dt0h", "tbvl", "tef0", "gte", "thcs", "ahc", "tr", "rci0", - "vlim", "vpt", "vces", "cjci0", "vdci", "zci", "vptci", "cjcx0", "vdcx", - "zcx", "vptcx", "fbc", "rbi0", "vr0e", "vr0c", "fgeo", "rbx", "rcx", - "re", "itss", "msf", "iscs", "msc", "cjs0", "vds", "zs", "vpts", - "cbcpar", "cbepar", "eavl", "kavl", "kf", "af", "vgb", "vge", "vgc", - "vgs", "f1vg", "f2vg", "alt0", "kt0", "zetact", "zetabet", "zetaci", - "alvs", "alces", "zetarbi", "zetarbx", "zetarcx", "zetare", "zetaiqf", - "alkav", "aleav", "zetarth", "tef_temp", "zetaver", "zetavgbe", "dvgbe", - "aliqfh", "kiqfh", "flsh", "rth", "cth", "tnom", "dt", "Temp", NULL }, - NULL, - "1 0 0 8 -26 0 0", - NULL - }, - /* hicum/l2 v2.22 bipolar transistor */ - { "hic2_full", "hic2_full", "Q", 5, - { "c10", "qp0", "ich", "hfe", "hfc", "hjei", "hjci", "ibeis", "mbei", - "ireis", "mrei", "ibeps", "mbep", "ireps", "mrep", "mcf", "tbhrec", - "ibcis", "mbci", "ibcxs", "mbcx", "ibets", "abet", "tunode", "favl", - "qavl", "alfav", "alqav", "rbi0", "rbx", "fgeo", "fdqr0", "fcrbi", - "fqi", "re", "rcx", "itss", "msf", "iscs", "msc", "tsf", "rsu", "csu", - "cjei0", "vdei", "zei", "ajei", "cjep0", "vdep", "zep", "ajep", - "cjci0", "vdci", "zci", "vptci", "cjcx0", "vdcx", "zcx", "vptcx", - "fbcpar", "fbepar", "cjs0", "vds", "zs", "vpts", "t0", "dt0h", "tbvl", - "tef0", "gtfe", "thcs", "ahc", "fthc", "rci0", "vlim", "vces", "vpt", - "tr", "cbepar", "cbcpar", "alqf", "alit", "flnqs", "kf", "af", "cfbe", - "latb", "latl", "vgb", "alt0", "kt0", "zetaci", "alvs", "alces", - "zetarbi", "zetarbx", "zetarcx", "zetare", "zetacx", "vge", "vgc", - "vgs", "f1vg", "f2vg", "zetact", "zetabet", "alb", "flsh", "rth", "cth", - "flcomp", "tnom", "dt", "Temp", NULL }, - NULL, - "1 0 0 8 -26 0 0", - NULL - }, - /* hicum/l2 v2.1 bipolar transistor */ - { "hicumL2V2p1", "hicumL2V2p1", "Q", 5, - { "c10", "qp0", "ich", "hfe", "hfc", "hjei", "hjci", "ibeis", - "mbei", "ireis", "mrei", "ibeps", "mbep", "ireps", "mrep", "mcf", - "ibcis", "mbci", "ibcxs", "mbcx", "ibets", "abet", "favl", "qavl", - "alfav", "alqav", "rbi0", "rbx", "fgeo", "fdqr0", "fcrbi", "fqi", "re", - "rcx", "itss", "msf", "iscs", "msc", "tsf", "rsu", "csu", "cjei0", - "vdei", "zei", "aljei", "cjep0", "vdep", "zep", "aljep", "cjci0", - "vdci", "zci", "vptci", "cjcx0", "vdcx", "zcx", "vptcx", "fbc", "cjs0", - "vds", "zs", "vpts", "t0", "dt0h", "tbvl", "tef0", "gtfe", "thcs", - "alhc", "fthc", "rci0", "vlim", "vces", "vpt", "tr", "ceox", "ccox", - "alqf", "alit", "kf", "af", "krbi", "latb", "latl", "vgb", "alt0", - "kt0", "zetaci", "zetacx", "alvs", "alces", "zetarbi", "zetarbx", - "zetarcx", "zetare", "alb", "rth", "cth", "tnom", "dt", "Temp", NULL }, - NULL, - "1 0 0 8 -26 0 0", - NULL - }, - /* hicum/l2 v2.23 bipolar transistor */ - { "hicumL2V2p23", "hicumL2V2p23", "Q", 5, - { "c10", "qp0", "ich", "hfe", "hfc", "hjei", "hjci", "ibeis", "mbei", - "ireis", "mrei", "ibeps", "mbep", "ireps", "mrep", "mcf", "tbhrec", - "ibcis", "mbci", "ibcxs", "mbcx", "ibets", "abet", "tunode", "favl", - "qavl", "alfav", "alqav", "rbi0", "rbx", "fgeo", "fdqr0", "fcrbi", - "fqi", "re", "rcx", "itss", "msf", "iscs", "msc", "tsf", "rsu", "csu", - "cjei0", "vdei", "zei", "ajei", "cjep0", "vdep", "zep", "ajep", - "cjci0", "vdci", "zci", "vptci", "cjcx0", "vdcx", "zcx", "vptcx", - "fbcpar", "fbepar", "cjs0", "vds", "zs", "vpts", "t0", "dt0h", "tbvl", - "tef0", "gtfe", "thcs", "ahc", "fthc", "rci0", "vlim", "vces", "vpt", - "tr", "cbepar", "cbcpar", "alqf", "alit", "flnqs", "kf", "af", "cfbe", - "latb", "latl", "vgb", "alt0", "kt0", "zetaci", "alvs", "alces", - "zetarbi", "zetarbx", "zetarcx", "zetare", "zetacx", "vge", "vgc", - "vgs", "f1vg", "f2vg", "zetact", "zetabet", "alb", "flsh", "rth", "cth", - "flcomp", "tnom", "dt", "Temp", NULL }, - NULL, - "1 0 0 8 -26 0 0", - NULL - }, - /* hicum/l2 v2.24 bipolar transistor */ - { "hicumL2V2p24", "hicumL2V2p24", "Q", 5, - { "c10", "qp0", "ich", "hfe", "hfc", "hjei", "hjci", "ibeis", "mbei", - "ireis", "mrei", "ibeps", "mbep", "ireps", "mrep", "mcf", "tbhrec", - "ibcis", "mbci", "ibcxs", "mbcx", "ibets", "abet", "tunode", "favl", - "qavl", "alfav", "alqav", "rbi0", "rbx", "fgeo", "fdqr0", "fcrbi", - "fqi", "re", "rcx", "itss", "msf", "iscs", "msc", "tsf", "rsu", "csu", - "cjei0", "vdei", "zei", "ajei", "cjep0", "vdep", "zep", "ajep", - "cjci0", "vdci", "zci", "vptci", "cjcx0", "vdcx", "zcx", "vptcx", - "fbcpar", "fbepar", "cjs0", "vds", "zs", "vpts", "t0", "dt0h", "tbvl", - "tef0", "gtfe", "thcs", "ahc", "fthc", "rci0", "vlim", "vces", "vpt", - "tr", "cbepar", "cbcpar", "alqf", "alit", "flnqs", "kf", "af", "cfbe", - "latb", "latl", "vgb", "alt0", "kt0", "zetaci", "alvs", "alces", - "zetarbi", "zetarbx", "zetarcx", "zetare", "zetacx", "vge", "vgc", - "vgs", "f1vg", "f2vg", "zetact", "zetabet", "alb", "flsh", "rth", "cth", - "flcomp", "tnom", "dt", "Temp", NULL }, - NULL, - "1 0 0 8 -26 0 0", - NULL - }, - /* hicum/l2 v2.31 bipolar transistor */ - { "hicumL2V2p31n", "hicumL2V2p31n", "Q", 5, - { "c10", "qp0", "ich", "hf0", "hfe", "hfc", "hjei", "ahjei", "rhjei", - "hjci", "ibeis", "mbei", "ireis", "mrei", "ibeps", "mbep", "ireps", - "mrep", "mcf", "tbhrec", "ibcis", "mbci", "ibcxs", "mbcx", "ibets", - "abet", "tunode", "favl", "qavl", "alfav", "alqav", "rbi0", "rbx", - "fgeo", "fdqr0", "fcrbi", "fqi", "re", "rcx", "itss", "msf", "iscs", - "msc", "tsf", "rsu", "csu", "cjei0", "vdei", "zei", "ajei", "cjep0", - "vdep", "zep", "ajep", "cjci0", "vdci", "zci", "vptci", "cjcx0", "vdcx", - "zcx", "vptcx", "fbcpar", "fbepar", "cjs0", "vds", "zs", "vpts", "t0", - "dt0h", "tbvl", "tef0", "gtfe", "thcs", "ahc", "fthc", "rci0", "vlim", - "vces", "vpt", "tr", "vcbar", "icbar", "acbar", "delck", "cbepar", - "cbcpar", "alqf", "alit", "flnqs", "kf", "af", "cfbe", "flcono", "kfre", - "afre", "latb", "latl", "vgb", "alt0", "kt0", "zetaci", "alvs", "alces", - "zetarbi", "zetarbx", "zetarcx", "zetare", "zetacx", "vge", "vgc", - "vgs", "f1vg", "f2vg", "zetact", "zetabet", "alb", "dvgbe", "zetahjei", - "zetavgbe", "flsh", "rth", "zetarth", "alrth", "cth", - "flcomp", "tnom", "dt", "Temp", NULL }, - NULL, - "1 0 0 8 -26 0 0", - NULL - }, /* junction FET */ { "JFET", "JFET", "J", 3, { "Type", "Vt0", "Beta", "Lambda", "Rd", "Rs", "Is", "N", "Isr", "Nr", diff --git a/qucs-core/src/module.cpp b/qucs-core/src/module.cpp index 20dcb5639d..35d6fa37d9 100644 --- a/qucs-core/src/module.cpp +++ b/qucs-core/src/module.cpp @@ -255,28 +255,16 @@ void module::registerModules (void) { REGISTER_CIRCUIT (logicxor); REGISTER_CIRCUIT (digisource); REGISTER_CIRCUIT (buffer); - REGISTER_CIRCUIT (hicumL2V2p1); - REGISTER_CIRCUIT (HBT_X); - REGISTER_CIRCUIT (mod_amp); - REGISTER_CIRCUIT (hic2_full); + + REGISTER_CIRCUIT (EKV26MOS); REGISTER_CIRCUIT (log_amp); - REGISTER_CIRCUIT (hic0_full); - REGISTER_CIRCUIT (potentiometer); + REGISTER_CIRCUIT (mod_amp); REGISTER_CIRCUIT (MESFET); - REGISTER_CIRCUIT (EKV26MOS); - REGISTER_CIRCUIT (bsim3v34nMOS); - REGISTER_CIRCUIT (bsim3v34pMOS); - REGISTER_CIRCUIT (bsim4v30nMOS); - REGISTER_CIRCUIT (bsim4v30pMOS); - REGISTER_CIRCUIT (hicumL0V1p2); - REGISTER_CIRCUIT (hicumL0V1p2g); - REGISTER_CIRCUIT (hicumL0V1p3); - REGISTER_CIRCUIT (hicumL2V2p23); - REGISTER_CIRCUIT (hicumL2V2p24); - REGISTER_CIRCUIT (hicumL2V2p31n); + REGISTER_CIRCUIT (nigbt); REGISTER_CIRCUIT (photodiode); REGISTER_CIRCUIT (phototransistor); - REGISTER_CIRCUIT (nigbt); + REGISTER_CIRCUIT (potentiometer); + REGISTER_CIRCUIT (dff_SR); REGISTER_CIRCUIT (tff_SR); REGISTER_CIRCUIT (jkff_SR); diff --git a/qucs/qucs-lib/symbolwidget.cpp b/qucs/qucs-lib/symbolwidget.cpp index c7d8df2eb7..5cffd42522 100644 --- a/qucs/qucs-lib/symbolwidget.cpp +++ b/qucs/qucs-lib/symbolwidget.cpp @@ -293,73 +293,6 @@ int SymbolWidget::createSymbol(const QString& Lib_, const QString& Comp_) x1 = -34; y1 = -9; x2 = 34; y2 = 9; } - else if(Comp == "hicumL2V2p1" || Comp == "hic2_full" || - Comp == "hic0_full" || Comp == "hicumL0V1p2" || - Comp == "hicumL2V2p23" || Comp == "hicumL2V2p24" || - Comp == "hicumL2V2p31n" || - Comp == "hicumL0V1p2g" || Comp == "hicumL0V1p3") { - // normal bipolar - Lines.append(new Line(-10,-15,-10, 15,QPen(Qt::darkBlue,3))); - Lines.append(new Line(-30, 0,-10, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, -5, 0,-15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0,-15, 0,-30,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, 5, 0, 15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 15, 0, 30,QPen(Qt::darkBlue,2))); - - // substrate node - Lines.append(new Line( 9, 0, 30, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 9, -7, 9, 7,QPen(Qt::darkBlue,3))); - - // thermal node - Lines.append(new Line(-30, 20,-20, 20,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-20, 17,-20, 23,QPen(Qt::darkBlue,2))); - - // arrow - if(FirstProp == "npn" || Comp == "hic2_full" || Comp == "hicumL2V2p23" || - Comp == "hicumL2V2p1") { - Lines.append(new Line( -6, 15, 0, 15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 9, 0, 15,QPen(Qt::darkBlue,2))); - } else { - Lines.append(new Line( -5, 10, -5, 16,QPen(Qt::darkBlue,2))); - Lines.append(new Line( -5, 10, 1, 10,QPen(Qt::darkBlue,2))); - } - - // H - Lines.append(new Line(-30,-30,-30,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-30,-27,-26,-27,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-26,-30,-26,-24,QPen(Qt::darkBlue,1))); - // I - Lines.append(new Line(-24,-30,-24,-24,QPen(Qt::darkBlue,1))); - // C - Lines.append(new Line(-22,-30,-22,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-22,-30,-19,-30,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-22,-24,-19,-24,QPen(Qt::darkBlue,1))); - // U - Lines.append(new Line(-17,-30,-17,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-14,-30,-14,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-17,-24,-14,-24,QPen(Qt::darkBlue,1))); - // M - Lines.append(new Line(-12,-30,-12,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line( -8,-30, -8,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-12,-30,-10,-28,QPen(Qt::darkBlue,1))); - Lines.append(new Line( -8,-30,-10,-28,QPen(Qt::darkBlue,1))); - - // terminal definitions - Arcs.append(new struct Arc( -4, -34, 8, 8, 0, 16*360, - QPen(Qt::red,1))); // collector - Arcs.append(new struct Arc(-34, -4, 8, 8, 0, 16*360, - QPen(Qt::red,1))); // base - Arcs.append(new struct Arc( -4, 26, 8, 8, 0, 16*360, - QPen(Qt::red,1))); // emitter - Arcs.append(new struct Arc( 26, -4, 8, 8, 0, 16*360, - QPen(Qt::red,1))); // substrate - Arcs.append(new struct Arc(-34, 16, 8, 8, 0, 16*360, - QPen(Qt::red,1))); // thermal node - - // relative boundings - x1 = -34; y1 = -34; - x2 = 34; y2 = 34; - } else if(Comp == "SUBST") { Lines.append(new Line(-30,-16, 30,-16,QPen(Qt::darkBlue,2))); Lines.append(new Line(-30,-12, 30,-12,QPen(Qt::darkBlue,2))); diff --git a/qucs/qucs/bitmaps/bsim3v34nMOS.png b/qucs/qucs/bitmaps/bsim3v34nMOS.png deleted file mode 100644 index 6c71d554f6426230c8513fdd6429cee7baab75d1..0000000000000000000000000000000000000000 GIT binary patch literal 0 HcmV?d00001 literal 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jSbzLyT~xnhe^>Z3`%vFmbP0l+XkKD-vgF diff --git a/qucs/qucs/components/CMakeLists.txt b/qucs/qucs/components/CMakeLists.txt index 17956c5d5f..d04b96907b 100644 --- a/qucs/qucs/components/CMakeLists.txt +++ b/qucs/qucs/components/CMakeLists.txt @@ -9,7 +9,7 @@ SET(COMPONENTS_SRCS DLS_1ton.cpp dff_SR.cpp logical_buf.cpp potentiometer.cpp DLS_nto1.cpp diac.cpp logical_inv.cpp rectline.cpp EKV26MOS.cpp digi_sim.cpp logical_nand.cpp relais.cpp -HBT_X.cpp digi_source.cpp logical_nor.cpp resistor.cpp +digi_source.cpp logical_nor.cpp resistor.cpp MESFET.cpp diode.cpp logical_or.cpp rfedd.cpp ac_sim.cpp dmux2to4.cpp logical_xnor.cpp rfedd2p.cpp am_modulator.cpp dmux3to8.cpp logical_xor.cpp rlcg.cpp @@ -27,15 +27,15 @@ attenuator.cpp ground.cpp msgap.cpp biast.cpp gyrator.cpp mslange.cpp subcircuit.cpp binarytogrey4bit.cpp ha1b.cpp msline.cpp subcirport.cpp bjt.cpp hb_sim.cpp msmbend.cpp substrate.cpp -bjtsub.cpp hic0_full.cpp msopen.cpp switch.cpp -bondwire.cpp hic2_full.cpp msrstub.cpp symtrafo.cpp -bsim3v34nMOS.cpp hicumL0V1p2.cpp msstep.cpp tff_SR.cpp -bsim3v34pMOS.cpp hicumL0V1p2g.cpp mstee.cpp thyristor.cpp -capacitor.cpp hicumL0V1p3.cpp msvia.cpp tline.cpp -cccs.cpp hicumL2V2p1.cpp mutual.cpp tline_4port.cpp -ccvs.cpp hicumL2V2p23.cpp mutual2.cpp tr_sim.cpp -circulator.cpp hicumL2V2p24.cpp mux2to1.cpp transformer.cpp -coaxialline.cpp hicumL2V2p31n.cpp mux4to1.cpp triac.cpp +bjtsub.cpp msopen.cpp switch.cpp +bondwire.cpp msrstub.cpp symtrafo.cpp +msstep.cpp tff_SR.cpp +mstee.cpp thyristor.cpp +capacitor.cpp msvia.cpp tline.cpp +cccs.cpp mutual.cpp tline_4port.cpp +ccvs.cpp mutual2.cpp tr_sim.cpp +circulator.cpp mux2to1.cpp transformer.cpp +coaxialline.cpp mux4to1.cpp triac.cpp comp_1bit.cpp hpribin4bit.cpp mux8to1.cpp tunneldiode.cpp comp_2bit.cpp hybrid.cpp nigbt.cpp twistedpair.cpp comp_4bit.cpp iexp.cpp noise_ii.cpp vafile.cpp @@ -53,8 +53,6 @@ d_flipflop.cpp log_amp.cpp phaseshifter.cpp vpulse.cpp dc_sim.cpp logic_0.cpp photodiode.cpp vrect.cpp dcblock.cpp logic_1.cpp phototransistor.cpp dcfeed.cpp logical_and.cpp pm_modulator.cpp -bsim4v30nMOS.cpp -bsim4v30pMOS.cpp vcresistor.cpp vacomponent.cpp mutualx.cpp @@ -76,10 +74,6 @@ binarytogrey4bit.h bjt.h bjtsub.h bondwire.h -bsim3v34nMOS.h -bsim3v34pMOS.h -bsim4v30nMOS.h -bsim4v30pMOS.h capacitor.h cccs.h ccvs.h @@ -125,16 +119,6 @@ ground.h gyrator.h ha1b.h hb_sim.h -HBT_X.h -hic0_full.h -hic2_full.h -hicumL0V1p2.h -hicumL0V1p2g.h -hicumL0V1p3.h -hicumL2V2p1.h -hicumL2V2p23.h -hicumL2V2p24.h -hicumL2V2p31n.h hpribin4bit.h hybrid.h iexp.h diff --git a/qucs/qucs/components/HBT_X.cpp b/qucs/qucs/components/HBT_X.cpp deleted file mode 100644 index 4735fc9f67..0000000000 --- a/qucs/qucs/components/HBT_X.cpp +++ /dev/null @@ -1,238 +0,0 @@ -/* - * HBT_X.cpp - device implementations for HBT_X module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ - -#include "HBT_X.h" - -HBT_X::HBT_X() -{ - Description = QObject::tr ("HBT model by Ferdinand-Braun-Institut (FBH), Berlin"); - - Props.append (new Property ("Mode", "1", false, - QObject::tr ("Ignored"))); - Props.append (new Property ("Noise", "1", false, - QObject::tr ("Ignored"))); - Props.append (new Property ("Debug", "0", false, - QObject::tr ("Ignored"))); - Props.append (new Property ("DebugPlus", "0", false, - QObject::tr ("Ignored"))); - Props.append (new Property ("Temp", "25.0", false, - QObject::tr ("Device operating temperature, Celsius"))); - Props.append (new Property ("Rth", "0.1", false, - QObject::tr ("Thermal resistance, K/W"))); - Props.append (new Property ("Cth", "700e-9", false, - QObject::tr ("Thermal capacitance"))); - Props.append (new Property ("N", "1", false, - QObject::tr ("Scaling factor, number of emitter fingers"))); - Props.append (new Property ("L", "30e-6", false, - QObject::tr ("Length of emitter finger, m"))); - Props.append (new Property ("W", "1e-6", false, - QObject::tr ("Width of emitter finger, m"))); - Props.append (new Property ("Jsf", "20e-24", false, - QObject::tr ("Forward saturation current density, A/um^2"))); - Props.append (new Property ("nf", "1.0", false, - QObject::tr ("Forward current emission coefficient"))); - Props.append (new Property ("Vg", "1.3", false, - QObject::tr ("Forward thermal activation energy, V, (0 == disables temperature dependence)"))); - Props.append (new Property ("Jse", "0.0", false, - QObject::tr ("B-E leakage saturation current density, A/um^2"))); - Props.append (new Property ("ne", "0.0", false, - QObject::tr ("B-E leakage emission coefficient"))); - Props.append (new Property ("Rbxx", "1e6", false, - QObject::tr ("Limiting resistor of B-E leakage diode, Ohm"))); - Props.append (new Property ("Vgb", "0.0", false, - QObject::tr ("B-E leakage thermal activation energy, V, (0 == disables temperature dependence)"))); - Props.append (new Property ("Jsee", "0.0", false, - QObject::tr ("2nd B-E leakage saturation current density, A/um^2"))); - Props.append (new Property ("nee", "0.0", false, - QObject::tr ("2nd B-E leakage emission coefficient"))); - Props.append (new Property ("Rbbxx", "1e6", false, - QObject::tr ("2nd Limiting resistor of B-E leakage diode, Ohm"))); - Props.append (new Property ("Vgbb", "0.0", false, - QObject::tr ("2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence)"))); - Props.append (new Property ("Jsr", "20e-18", false, - QObject::tr ("Reverse saturation current density, A/um^2"))); - Props.append (new Property ("nr", "1.0", false, - QObject::tr ("Reverse current emission coefficient"))); - Props.append (new Property ("Vgr", "0.0", false, - QObject::tr ("Reverse thermal activation energy, V, (0 == disables temperature dependence)"))); - Props.append (new Property ("XCjc", "0.5", false, - QObject::tr ("Fraction of Cjc that goes to internal base node"))); - Props.append (new Property ("Jsc", "0.0", false, - QObject::tr ("B-C leakage saturation current density, A/um^2 (0. switches off diode)"))); - Props.append (new Property ("nc", "0.0", false, - QObject::tr ("B-C leakage emission coefficient (0. switches off diode)"))); - Props.append (new Property ("Rcxx", "1e6", false, - QObject::tr ("Limiting resistor of B-C leakage diode, Ohm"))); - Props.append (new Property ("Vgc", "0.0", false, - QObject::tr ("B-C leakage thermal activation energy, V, (0 == disables temperature dependence)"))); - Props.append (new Property ("Bf", "100.0", false, - QObject::tr ("Ideal forward beta"))); - Props.append (new Property ("kBeta", "0.0", false, - QObject::tr ("Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence)"))); - Props.append (new Property ("Br", "1.0", false, - QObject::tr ("Ideal reverse beta"))); - Props.append (new Property ("VAF", "0.0", false, - QObject::tr ("Forward Early voltage, V, (0 == disables Early Effect)"))); - Props.append (new Property ("VAR", "0.0", false, - QObject::tr ("Reverse Early voltage, V, (0 == disables Early Effect)"))); - Props.append (new Property ("IKF", "0.0", false, - QObject::tr ("Forward high-injection knee current, A, (0 == disables Webster Effect)"))); - Props.append (new Property ("IKR", "0.0", false, - QObject::tr ("Reverse high-injection knee current, A, (0 == disables Webster Effect)"))); - Props.append (new Property ("Mc", "0.0", false, - QObject::tr ("C-E breakdown exponent, (0 == disables collector break-down)"))); - Props.append (new Property ("BVceo", "0.0", false, - QObject::tr ("C-E breakdown voltage, V, (0 == disables collector break-down)"))); - Props.append (new Property ("kc", "0.0", false, - QObject::tr ("C-E breakdown factor, (0 == disables collector break-down)"))); - Props.append (new Property ("BVebo", "0.0", false, - QObject::tr ("B-E breakdown voltage, V, (0 == disables emitter break-down)"))); - Props.append (new Property ("Tr", "1.0e-15", false, - QObject::tr ("Ideal reverse transit time, s"))); - Props.append (new Property ("Trx", "1.0e-15", false, - QObject::tr ("Extrinsic BC diffusion capacitance, F"))); - Props.append (new Property ("Tf", "1.0e-12", false, - QObject::tr ("Ideal forward transit time, s"))); - Props.append (new Property ("Tft", "0.0", false, - QObject::tr ("Temperature coefficient of forward transit time"))); - Props.append (new Property ("Thcs", "0.0", false, - QObject::tr ("Excess transit time coefficient at base push-out"))); - Props.append (new Property ("Ahc", "0.0", false, - QObject::tr ("Smoothing parameter for Thcs"))); - Props.append (new Property ("Cje", "1.0e-15", false, - QObject::tr ("B-E zero-bias depletion capacitance, F/um^2"))); - Props.append (new Property ("mje", "0.5", false, - QObject::tr ("B-E junction exponential factor"))); - Props.append (new Property ("Vje", "1.3", false, - QObject::tr ("B-E junction built-in potential, V"))); - Props.append (new Property ("Cjc", "1.0e-15", false, - QObject::tr ("B-C zero-bias depletion capacitance, F/um^2"))); - Props.append (new Property ("mjc", "0.5", false, - QObject::tr ("B-C junction exponential factor"))); - Props.append (new Property ("Vjc", "1.3", false, - QObject::tr ("B-C junction built-in potential, V"))); - Props.append (new Property ("kjc", "1.0", false, - QObject::tr ("not used"))); - Props.append (new Property ("Cmin", "0.1e-15", false, - QObject::tr ("Minimum B-C depletion capacitance (Vbc dependence), F/um^2"))); - Props.append (new Property ("J0", "1e-3", false, - QObject::tr ("Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction)"))); - Props.append (new Property ("XJ0", "1.0", false, - QObject::tr ("Fraction of Cmin, lower limit of BC capacitance (Ic dependence)"))); - Props.append (new Property ("Rci0", "1e-3", false, - QObject::tr ("Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out)"))); - Props.append (new Property ("Jk", "4e-4", false, - QObject::tr ("Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out)"))); - Props.append (new Property ("RJk", "1e-3", false, - QObject::tr ("Slope of Jk at high currents , Ohm*um^2"))); - Props.append (new Property ("Vces", "1e-3", false, - QObject::tr ("Voltage shift of base push-out onset, V"))); - Props.append (new Property ("Rc", "1.0", false, - QObject::tr ("Collector resistance, Ohm/finger"))); - Props.append (new Property ("Re", "1.0", false, - QObject::tr ("Emitter resistance, Ohm/finger"))); - Props.append (new Property ("Rb", "1.0", false, - QObject::tr ("Extrinsic base resistance, Ohm/finger"))); - Props.append (new Property ("Rb2", "1.0", false, - QObject::tr ("Inner Base ohmic resistance, Ohm/finger"))); - Props.append (new Property ("Lc", "0.0", false, - QObject::tr ("Collector inductance, H"))); - Props.append (new Property ("Le", "0.0", false, - QObject::tr ("Emitter inductance, H"))); - Props.append (new Property ("Lb", "0.0", false, - QObject::tr ("Base inductance, H"))); - Props.append (new Property ("Cq", "0.0", false, - QObject::tr ("Extrinsic B-C capacitance, F"))); - Props.append (new Property ("Cpb", "0.0", false, - QObject::tr ("Extrinsic base capacitance, F"))); - Props.append (new Property ("Cpc", "0.0", false, - QObject::tr ("Extrinsic collector capacitance, F"))); - Props.append (new Property ("Kfb", "0.0", false, - QObject::tr ("Flicker-noise coefficient"))); - Props.append (new Property ("Afb", "0.0", false, - QObject::tr ("Flicker-noise exponent"))); - Props.append (new Property ("Ffeb", "0.0", false, - QObject::tr ("Flicker-noise frequency exponent"))); - Props.append (new Property ("Kb", "0.0", false, - QObject::tr ("Burst noise coefficient"))); - Props.append (new Property ("Ab", "0.0", false, - QObject::tr ("Burst noise exponent"))); - Props.append (new Property ("Fb", "0.0", false, - QObject::tr ("Burst noise corner frequency, Hz"))); - Props.append (new Property ("Kfe", "0.0", false, - QObject::tr ("Flicker-noise coefficient"))); - Props.append (new Property ("Afe", "0.0", false, - QObject::tr ("Flicker-noise exponent"))); - Props.append (new Property ("Ffee", "0.0", false, - QObject::tr ("Flicker-noise frequency exponent"))); - Props.append (new Property ("Tnom", "20.0", false, - QObject::tr ("Ambient temperature at which the parameters were determined"))); - - - // normal bipolar - Lines.append(new Line(-10,-15,-10, 15,QPen(Qt::darkBlue,3))); - Lines.append(new Line(-30, 0,-10, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, -5, 0,-15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0,-15, 0,-30,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, 5, 0, 15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 15, 0, 30,QPen(Qt::darkBlue,2))); - - // thermal node - Lines.append(new Line(-30, 20,-20, 20,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-20, 17,-20, 23,QPen(Qt::darkBlue,2))); - - // arrow - Lines.append(new Line( -6, 15, 0, 15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 9, 0, 15,QPen(Qt::darkBlue,2))); - - // H - Lines.append(new Line(-30,-30,-30,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-30,-27,-26,-27,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-26,-30,-26,-24,QPen(Qt::darkBlue,1))); - // B - Lines.append(new Line(-23,-30,-23,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-24,-30,-20,-30,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-23,-27,-20,-27,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-24,-24,-20,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-20,-30,-20,-27,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-20,-27,-20,-24,QPen(Qt::darkBlue,1))); - // T - Lines.append(new Line(-18,-30,-14,-30,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-16,-30,-16,-24,QPen(Qt::darkBlue,1))); - - Ports.append(new Port( 0,-30)); // collector - Ports.append(new Port(-30, 0)); // base - Ports.append(new Port( 0, 30)); // emitter - Ports.append(new Port(-30, 20)); // thermal node - - x1 = -30; y1 = -30; - x2 = 4; y2 = 30; - - tx = x2 + 4; - ty = y1 + 4; - Model = "HBT_X"; - Name = "T"; -} - -Component * HBT_X::newOne() -{ - HBT_X * p = new HBT_X(); - p->recreate(0); - return p; -} - -Element * HBT_X::info(QString& Name, char * &BitmapFile, bool getNewOne) -{ - Name = QObject::tr("FBH HBT"); - BitmapFile = (char *) "npn_therm"; - - if(getNewOne) return new HBT_X(); - return 0; -} diff --git a/qucs/qucs/components/HBT_X.h b/qucs/qucs/components/HBT_X.h deleted file mode 100644 index b4992eec47..0000000000 --- a/qucs/qucs/components/HBT_X.h +++ /dev/null @@ -1,25 +0,0 @@ -/* - * HBT_X.h - device definitions for HBT_X module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ - -#ifndef HBT_X_H -#define HBT_X_H - -#include "component.h" - -class HBT_X : public Component -{ - public: - HBT_X(); - ~HBT_X() { }; - Component* newOne(); - static Element* info(QString&, char* &, bool getNewOne=false); -}; - -#endif /* HBT_X_H */ diff --git a/qucs/qucs/components/Makefile.am b/qucs/qucs/components/Makefile.am index 01f9c7be8c..93b7f3d3e5 100644 --- a/qucs/qucs/components/Makefile.am +++ b/qucs/qucs/components/Makefile.am @@ -47,20 +47,19 @@ libcomponents_a_SOURCES = phaseshifter.cpp gyrator.cpp componentdialog.cpp \ rs_flipflop.cpp d_flipflop.cpp jk_flipflop.cpp coaxialline.cpp vprobe.cpp \ switch.cpp relais.cpp am_modulator.cpp pm_modulator.cpp opt_sim.cpp \ optimizedialog.cpp tline_4port.cpp twistedpair.cpp bondwire.cpp rlcg.cpp \ - hicumL2V2p1.cpp HBT_X.cpp verilogfile.cpp vexp.cpp iexp.cpp eqndefined.cpp \ - vfile.cpp ifile.cpp mod_amp.cpp hic2_full.cpp thyristor.cpp triac.cpp \ - diac.cpp log_amp.cpp hic0_full.cpp potentiometer.cpp rfedd.cpp rfedd2p.cpp \ - MESFET.cpp rectline.cpp hicumL0V1p2.cpp hicumL2V2p23.cpp photodiode.cpp \ + verilogfile.cpp vexp.cpp iexp.cpp eqndefined.cpp \ + vfile.cpp ifile.cpp mod_amp.cpp thyristor.cpp triac.cpp \ + diac.cpp log_amp.cpp potentiometer.cpp rfedd.cpp rfedd2p.cpp \ + MESFET.cpp rectline.cpp photodiode.cpp \ EKV26MOS.cpp logical_buf.cpp dff_SR.cpp jkff_SR.cpp tff_SR.cpp \ gatedDlatch.cpp logic_0.cpp logic_1.cpp mux2to1.cpp mux4to1.cpp mux8to1.cpp \ DLS_nto1.cpp DLS_1ton.cpp andor4x2.cpp andor4x3.cpp andor4x4.cpp \ dmux2to4.cpp dmux3to8.cpp dmux4to16.cpp ha1b.cpp fa1b.cpp fa2b.cpp \ pad2bit.cpp pad3bit.cpp pad4bit.cpp binarytogrey4bit.cpp vafile.cpp \ greytobinary4bit.cpp comp_1bit.cpp comp_2bit.cpp comp_4bit.cpp \ - hpribin4bit.cpp msrstub.cpp phototransistor.cpp nigbt.cpp hicumL2V2p24.cpp \ - hicumL0V1p2g.cpp hybrid.cpp ctline.cpp tunneldiode.cpp hicumL0V1p3.cpp \ - hicumL2V2p31n.cpp bsim3v34nMOS.cpp bsim3v34pMOS.cpp bsim4v30nMOS.cpp \ - bsim4v30pMOS.cpp etr_sim.cpp ecvs.cpp vcresistor.cpp vacomponent.cpp \ + hpribin4bit.cpp msrstub.cpp phototransistor.cpp nigbt.cpp \ + hybrid.cpp ctline.cpp tunneldiode.cpp \ + etr_sim.cpp ecvs.cpp vcresistor.cpp vacomponent.cpp \ mutualx.cpp nodist_libcomponents_a_SOURCES = $(MOCFILES) @@ -80,18 +79,17 @@ noinst_HEADERS = $(MOCHEADERS) resistor.h components.h capacitor.h vccs.h \ logical_xor.h logical_xnor.h logical_inv.h digi_sim.h digi_source.h \ coupler.h rs_flipflop.h d_flipflop.h jk_flipflop.h coaxialline.h vprobe.h \ switch.h relais.h am_modulator.h pm_modulator.h opt_sim.h tline_4port.h \ - twistedpair.h bondwire.h hicumL2V2p1.h HBT_X.h verilogfile.h vexp.h iexp.h \ - eqndefined.h vfile.h ifile.h mod_amp.h hic2_full.h thyristor.h triac.h \ - diac.h log_amp.h hic0_full.h potentiometer.h rfedd.h rfedd2p.h MESFET.h \ - rectline.h hicumL0V1p2.h hicumL2V2p23.h photodiode.h EKV26MOS.h rlcg.h \ + twistedpair.h bondwire.h verilogfile.h vexp.h iexp.h \ + eqndefined.h vfile.h ifile.h mod_amp.h thyristor.h triac.h \ + diac.h log_amp.h potentiometer.h rfedd.h rfedd2p.h MESFET.h \ + rectline.h photodiode.h EKV26MOS.h rlcg.h \ logical_buf.h dff_SR.h jkff_SR.h tff_SR.h gatedDlatch.h logic_0.h logic_1.h \ mux2to1.h mux4to1.h mux8to1.h DLS_nto1.h DLS_1ton.h andor4x2.h andor4x3.h \ andor4x4.h dmux2to4.h dmux3to8.h dmux4to16.h ha1b.h fa1b.h fa2b.h pad2bit.h \ pad3bit.h pad4bit.h binarytogrey4bit.h greytobinary4bit.h comp_1bit.h \ comp_2bit.h comp_4bit.h hpribin4bit.h msrstub.h phototransistor.h nigbt.h \ - vafile.h hicumL2V2p24.h hicumL0V1p2g.h hybrid.h ctline.h tunneldiode.h \ - hicumL0V1p3.h hicumL2V2p31n.h bsim3v34nMOS.h bsim3v34pMOS.h bsim4v30nMOS.h \ - bsim4v30pMOS.h etr_sim.h ecvs.h vcresistor.h vacomponent.h \ + vafile.h hybrid.h ctline.h tunneldiode.h \ + etr_sim.h ecvs.h vcresistor.h vacomponent.h \ mutualx.h AM_CPPFLAGS = $(X11_INCLUDES) $(QT_INCLUDES) -I$(top_srcdir)/qucs diff --git a/qucs/qucs/components/bsim3v34nMOS.cpp b/qucs/qucs/components/bsim3v34nMOS.cpp deleted file mode 100644 index b8f181c692..0000000000 --- a/qucs/qucs/components/bsim3v34nMOS.cpp +++ /dev/null @@ -1,889 +0,0 @@ -/* - * bsim3v34nMOS.cpp - device implementations for bsim3v34nMOS module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ - -#include "bsim3v34nMOS.h" - -bsim3v34nMOS::bsim3v34nMOS() -{ - Description = QObject::tr ("bsim3v34nMOS verilog device"); - - Props.append (new Property ("L", "0.35e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("W", "5.0e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("PS", "8.0e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("PD", "8.0e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("AS", "12.0e-12", false, - QObject::tr ("-"))); - Props.append (new Property ("AD", "12.0e-12", false, - QObject::tr ("-"))); - Props.append (new Property ("NRS", "10.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NRD", "10.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NQSMOD", "0", false, - QObject::tr ("-"))); - Props.append (new Property ("GMIN", "1e-12", false, - QObject::tr ("-"))); - Props.append (new Property ("VERSION", "3.24", false, - QObject::tr ("-"))); - Props.append (new Property ("PARAMCHK", "0", false, - QObject::tr ("-"))); - Props.append (new Property ("MOBMOD", "1", false, - QObject::tr ("-"))); - Props.append (new Property ("CAPMOD", "3", false, - QObject::tr ("-"))); - Props.append (new Property ("NOIMOD", "4", false, - QObject::tr ("-"))); - Props.append (new Property ("BINUNIT", "1", false, - QObject::tr ("-"))); - Props.append (new Property ("TOX", "150.0e-10", false, - QObject::tr ("-"))); - Props.append (new Property ("TOXM", "150.0e-10", false, - QObject::tr ("-"))); - Props.append (new Property ("CDSC", "2.4e-4", false, - QObject::tr ("-"))); - Props.append (new Property ("CDSCB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CDSCD", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CIT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NFACTOR", "1", false, - QObject::tr ("-"))); - Props.append (new Property ("XJ", "0.15e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("VSAT", "8.0e4", false, - QObject::tr ("-"))); - Props.append (new Property ("AT", "3.3e4", false, - QObject::tr ("-"))); - Props.append (new Property ("A0", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("AGS", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("A1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("A2", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("KETA", "-0.047", false, - QObject::tr ("-"))); - Props.append (new Property ("NSUB", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NCH", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NGATE", "0", false, - QObject::tr ("-"))); - Props.append (new Property ("GAMMA1", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("GAMMA2", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("VBX", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("VBM", "-3.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XT", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("K1", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("KT1", "-0.11", false, - QObject::tr ("-"))); - Props.append (new Property ("KT1L", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("KT2", "0.022", false, - QObject::tr ("-"))); - Props.append (new Property ("K2", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("K3", "80.0", false, - QObject::tr ("-"))); - Props.append (new Property ("K3B", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("W0", "2.5e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("NLX", "1.74e-7", false, - QObject::tr ("-"))); - Props.append (new Property ("DVT0", "2.2", false, - QObject::tr ("-"))); - Props.append (new Property ("DVT1", "0.53", false, - QObject::tr ("-"))); - Props.append (new Property ("DVT2", "-0.032", false, - QObject::tr ("-"))); - Props.append (new Property ("DVT0W", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DVT1W", "5.3e6", false, - QObject::tr ("-"))); - Props.append (new Property ("DVT2W", "-0.032", false, - QObject::tr ("-"))); - Props.append (new Property ("DROUT", "0.56", false, - QObject::tr ("-"))); - Props.append (new Property ("DSUB", "0.56", false, - QObject::tr ("-"))); - Props.append (new Property ("VTHO", "0.7", false, - QObject::tr ("-"))); - Props.append (new Property ("VTH0", "0.7", false, - QObject::tr ("-"))); - Props.append (new Property ("UA", "2.25e-9", false, - QObject::tr ("-"))); - Props.append (new Property ("UA1", "4.31e-9", false, - QObject::tr ("-"))); - Props.append (new Property ("UB", "5.87e-19", false, - QObject::tr ("-"))); - Props.append (new Property ("UB1", "-7.61e-18", false, - QObject::tr ("-"))); - Props.append (new Property ("UC", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("UC1", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("U0", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("UTE", "-1.5", false, - QObject::tr ("-"))); - Props.append (new Property ("VOFF", "-0.08", false, - QObject::tr ("-"))); - Props.append (new Property ("TNOM", "26.85", false, - QObject::tr ("-"))); - Props.append (new Property ("CGSO", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CGDO", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CGBO", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XPART", "0.4", false, - QObject::tr ("-"))); - Props.append (new Property ("ELM", "5.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DELTA", "0.01", false, - QObject::tr ("-"))); - Props.append (new Property ("RSH", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RDSW", "0", false, - QObject::tr ("-"))); - Props.append (new Property ("PRWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PRWB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PRT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("ETA0", "0.08", false, - QObject::tr ("-"))); - Props.append (new Property ("ETAB", "-0.07", false, - QObject::tr ("-"))); - Props.append (new Property ("PCLM", "1.3", false, - QObject::tr ("-"))); - Props.append (new Property ("PDIBLC1", "0.39", false, - QObject::tr ("-"))); - Props.append (new Property ("PDIBLC2", "0.0086", false, - QObject::tr ("-"))); - Props.append (new Property ("PDIBLCB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PSCBE1", "4.24e8", false, - QObject::tr ("-"))); - Props.append (new Property ("PSCBE2", "1.0e-5", false, - QObject::tr ("-"))); - Props.append (new Property ("PVAG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("JS", "1.0E-4", false, - QObject::tr ("-"))); - Props.append (new Property ("JSW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PB", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NJ", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XTI", "3.0", false, - QObject::tr ("-"))); - Props.append (new Property ("MJ", "0.5", false, - QObject::tr ("-"))); - Props.append (new Property ("PBSW", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("MJSW", "0.33", false, - QObject::tr ("-"))); - Props.append (new Property ("PBSWG", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("MJSWG", "0.33", false, - QObject::tr ("-"))); - Props.append (new Property ("CJ", "5.0E-4", false, - QObject::tr ("-"))); - Props.append (new Property ("VFBCV", "-1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("VFB", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CJSW", "5.0E-10", false, - QObject::tr ("-"))); - Props.append (new Property ("CJSWG", "5.0e-10", false, - QObject::tr ("-"))); - Props.append (new Property ("TPB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TCJ", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TPBSW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TCJSW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TPBSWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TCJSWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("ACDE", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("MOIN", "15.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NOFF", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("VOFFCV", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LINT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LLC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LLN", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LWC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LWN", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LWL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LWLC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LMIN", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LMAX", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WR", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WINT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DWB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WLC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WLN", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WWC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WWN", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WWL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WWLC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WMIN", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WMAX", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("B0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("B1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CGSL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CGDL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CKAPPA", "0.6", false, - QObject::tr ("-"))); - Props.append (new Property ("CF", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CLC", "0.1e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("CLE", "0.6", false, - QObject::tr ("-"))); - Props.append (new Property ("DWC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DLC", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("ALPHA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("ALPHA1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("BETA0", "30.0", false, - QObject::tr ("-"))); - Props.append (new Property ("IJTH", "0.1", false, - QObject::tr ("-"))); - Props.append (new Property ("LCDSC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LCDSCB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LCDSCD", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LCIT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LNFACTOR", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LXJ", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LVSAT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LAT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LAGS", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LA1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LA2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LKETA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LNSUB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LNCH", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LNGATE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LGAMMA1", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LGAMMA2", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LVBX", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LVBM", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LXT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LK1", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LKT1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LKT1L", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LKT2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LK2", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property 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"0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LUA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LUA1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LUB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LUB1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LUC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LUC1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LU0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LUTE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LVOFF", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LELM", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LDELTA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LRDSW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LPRWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LPRWB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LPRT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LETA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LETAB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LPCLM", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LPDIBLC1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LPDIBLC2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LPDIBLCB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LPSCBE1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LPSCBE2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LPVAG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LWR", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LDWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LDWB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LB0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LB1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LCGSL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LCGDL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LCKAPPA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LCF", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LCLC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LCLE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LALPHA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LALPHA1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LBETA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LVFBCV", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LVFB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LACDE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LMOIN", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LNOFF", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LVOFFCV", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WCDSC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WCDSCB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WCDSCD", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WCIT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WNFACTOR", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WXJ", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WVSAT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WAT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WAGS", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WA1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WA2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WKETA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WNSUB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WNCH", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WNGATE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WGAMMA1", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WGAMMA2", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WVBX", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WVBM", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WXT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WK1", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WKT1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WKT1L", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WKT2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WK2", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WK3", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WK3B", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WW0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WNLX", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WDVT0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WDVT1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WDVT2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WDVT0W", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WDVT1W", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WDVT2W", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WDROUT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WDSUB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WVTH0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WVTHO", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WUA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WUA1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WUB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WUB1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WUC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WUC1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WU0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WUTE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WVOFF", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WELM", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WDELTA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WRDSW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WPRWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WPRWB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WPRT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WETA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WETAB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WPCLM", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WPDIBLC1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WPDIBLC2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WPDIBLCB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WPSCBE1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WPSCBE2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WPVAG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WWR", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WDWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WDWB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WB0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WB1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WCGSL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WCGDL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WCKAPPA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WCF", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WCLC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WCLE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WALPHA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WALPHA1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WBETA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WVFBCV", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WVFB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WACDE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WMOIN", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WNOFF", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WVOFFCV", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PCDSC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PCDSCB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PCDSCD", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PCIT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PNFACTOR", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PXJ", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PVSAT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PAT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PAGS", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PA1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PA2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PKETA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PNSUB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PNCH", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PNGATE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PGAMMA1", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PGAMMA2", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PVBX", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PVBM", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PXT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PK1", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PKT1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PKT1L", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PKT2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PK2", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PK3", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PK3B", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PW0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PNLX", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDVT0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDVT1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDVT2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDVT0W", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDVT1W", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDVT2W", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDROUT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDSUB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PVTH0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PVTHO", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PUA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PUA1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PUB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PUB1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PUC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PUC1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PU0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PUTE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PVOFF", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PELM", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDELTA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PRDSW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PPRWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PPRWB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PPRT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PETA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PETAB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PPCLM", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PPDIBLC1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PPDIBLC2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PPDIBLCB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PPSCBE1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PPSCBE2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PPVAG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PWR", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDWB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PB0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PB1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PCGSL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PCGDL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PCKAPPA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PCF", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PCLC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PCLE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PALPHA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PALPHA1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PBETA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PVFBCV", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PVFB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PACDE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PMOIN", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PNOFF", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PVOFFCV", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("KF", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("AF", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("EF", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("Temp", "26.85", false, - QObject::tr ("simulation temperature"))); - - createSymbol (); - tx = x2 + 4; - ty = y1 + 4; - Model = "bsim3v34nMOS"; - Name = "BSIM3_"; -} - -Component * bsim3v34nMOS::newOne() -{ - bsim3v34nMOS * p = new bsim3v34nMOS(); - p->Props.getFirst()->Value = Props.getFirst()->Value; - p->recreate(0); - return p; -} - -Element * bsim3v34nMOS::info(QString& Name, char * &BitmapFile, bool getNewOne) -{ - Name = QObject::tr("bsim3v34nMOS"); - BitmapFile = (char *) "bsim3v34nMOS"; - - if(getNewOne) return new bsim3v34nMOS(); - return 0; -} - -void bsim3v34nMOS::createSymbol() -{ - -Lines.append(new Line(-14,-13,-14, 13,QPen(Qt::darkBlue,3))); - Lines.append(new Line(-30, 0,-14, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10,-11, 0,-11,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0,-11, 0,-30,QPen(Qt::darkBlue,2))); - - Lines.append(new Line(-10, 11, 0, 11,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 11, 0, 30,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, 0, 20, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10,-16,-10, -7,QPen(Qt::darkBlue,3))); - - Lines.append(new Line(-10, 7,-10, 16,QPen(Qt::darkBlue,3))); - Lines.append(new Line( -4, 24, 4, 20,QPen(Qt::darkBlue,2))); - - // arrow - Lines.append(new Line( -9, 0, -4, -5,QPen(Qt::darkBlue,2))); - Lines.append(new Line( -9, 0, -4, 5,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, -3,-10, 3,QPen(Qt::darkBlue,3))); - Lines.append(new Line(-10, -8,-10, -6,QPen(Qt::darkBlue,3))); - Lines.append(new Line(-10, 8,-10, 6,QPen(Qt::darkBlue,3))); - - - Ports.append(new Port( 0,-30)); // drain - Ports.append(new Port(-30, 0)); // gate - Ports.append(new Port( 0, 30)); // source - Ports.append(new Port( 20, 0)); // bulk - - x1 = -30; y1 = -30; - x2 = 20; y2 = 30; -} diff --git a/qucs/qucs/components/bsim3v34nMOS.h b/qucs/qucs/components/bsim3v34nMOS.h deleted file mode 100644 index 6a23a58ee1..0000000000 --- a/qucs/qucs/components/bsim3v34nMOS.h +++ /dev/null @@ -1,27 +0,0 @@ -/* - * bsim3v34nMOS.h - device definitions for bsim3v34nMOS module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ - -#ifndef bsim3v34nMOS_H -#define bsim3v34nMOS_H - -#include "component.h" - -class bsim3v34nMOS : public Component -{ - public: - bsim3v34nMOS(); - ~bsim3v34nMOS() { }; - Component* newOne(); - static Element* info(QString&, char* &, bool getNewOne=false); - protected: - void createSymbol(); -}; - -#endif /* bsim3v34nMOS_H */ diff --git a/qucs/qucs/components/bsim3v34pMOS.cpp b/qucs/qucs/components/bsim3v34pMOS.cpp deleted file mode 100644 index 3277d05b56..0000000000 --- a/qucs/qucs/components/bsim3v34pMOS.cpp +++ /dev/null @@ -1,887 +0,0 @@ -/* - * bsim3v34pMOS.cpp - device implementations for bsim3v34pMOS module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ - -#include "bsim3v34pMOS.h" - -bsim3v34pMOS::bsim3v34pMOS() -{ - Description = QObject::tr ("bsim3v34pMOS verilog device"); - - Props.append (new Property ("L", "3.5e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("W", "5.0e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("PS", "8.0e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("PD", "8.0e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("AS", "12.0e-12", false, - QObject::tr ("-"))); - Props.append (new Property ("AD", "12.0e-12", false, - QObject::tr ("-"))); - Props.append (new Property ("NRS", "10.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NRD", "10.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NQSMOD", "0", false, - QObject::tr ("-"))); - Props.append (new Property ("GMIN", "1e-12", false, - QObject::tr ("-"))); - Props.append (new Property ("VERSION", "3.24", false, - QObject::tr ("-"))); - Props.append (new Property ("PARAMCHK", "0", false, - QObject::tr ("-"))); - Props.append (new Property ("MOBMOD", "1", false, - QObject::tr ("-"))); - Props.append (new Property ("CAPMOD", "3", false, - QObject::tr ("-"))); - Props.append (new Property ("NOIMOD", "4", false, - QObject::tr ("-"))); - Props.append (new Property ("BINUNIT", "1", false, - QObject::tr ("-"))); - Props.append (new Property ("TOX", "150.0e-10", false, - QObject::tr ("-"))); - Props.append (new Property ("TOXM", "150.0e-10", false, - QObject::tr ("-"))); - Props.append (new Property ("CDSC", "2.4e-4", false, - QObject::tr ("-"))); - Props.append (new Property ("CDSCB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CDSCD", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CIT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NFACTOR", "1", false, - QObject::tr ("-"))); - Props.append (new Property ("XJ", "0.15e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("VSAT", "8.0e4", false, - QObject::tr ("-"))); - Props.append (new Property ("AT", "3.3e4", false, - QObject::tr ("-"))); - Props.append (new Property ("A0", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("AGS", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("A1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("A2", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("KETA", "-0.047", false, - QObject::tr ("-"))); - Props.append (new Property ("NSUB", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NCH", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NGATE", "0", false, - QObject::tr ("-"))); - Props.append (new Property ("GAMMA1", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("GAMMA2", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("VBX", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("VBM", "-3.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XT", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("K1", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("KT1", "-0.11", false, - QObject::tr ("-"))); - Props.append (new Property ("KT1L", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("KT2", "0.022", false, - QObject::tr ("-"))); - Props.append (new Property ("K2", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("K3", "80.0", false, - QObject::tr ("-"))); - Props.append (new Property ("K3B", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("W0", "2.5e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("NLX", "1.74e-7", false, - QObject::tr ("-"))); - Props.append (new Property ("DVT0", "2.2", false, - QObject::tr ("-"))); - Props.append (new Property ("DVT1", "0.53", false, - QObject::tr ("-"))); - Props.append (new Property ("DVT2", "-0.032", false, - QObject::tr ("-"))); - Props.append (new Property ("DVT0W", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DVT1W", "5.3e6", false, - QObject::tr ("-"))); - Props.append (new Property ("DVT2W", "-0.032", false, - QObject::tr ("-"))); - Props.append (new Property ("DROUT", "0.56", false, - QObject::tr ("-"))); - Props.append (new Property ("DSUB", "0.56", false, - QObject::tr ("-"))); - Props.append (new Property ("VTHO", "-0.7", false, - QObject::tr ("-"))); - Props.append (new Property ("VTH0", "-0.7", false, - QObject::tr ("-"))); - Props.append (new Property ("UA", "2.25e-9", false, - QObject::tr ("-"))); - Props.append (new Property ("UA1", "4.31e-9", false, - QObject::tr ("-"))); - Props.append (new Property ("UB", "5.87e-19", false, - QObject::tr ("-"))); - Props.append (new Property ("UB1", "-7.61e-18", false, - QObject::tr ("-"))); - Props.append (new Property ("UC", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("UC1", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("U0", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("UTE", "-1.5", false, - QObject::tr ("-"))); - Props.append (new Property ("VOFF", "-0.08", false, - QObject::tr ("-"))); - Props.append (new Property ("TNOM", "26.85", false, - QObject::tr ("-"))); - Props.append (new Property ("CGSO", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CGDO", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CGBO", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XPART", "0.4", false, - QObject::tr ("-"))); - Props.append (new Property ("ELM", "5.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DELTA", "0.01", false, - QObject::tr ("-"))); - Props.append (new Property ("RSH", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RDSW", "0", false, - QObject::tr ("-"))); - Props.append (new Property ("PRWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PRWB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PRT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("ETA0", "0.08", false, - QObject::tr ("-"))); - Props.append (new Property ("ETAB", "-0.07", false, - QObject::tr ("-"))); - Props.append (new Property ("PCLM", "1.3", false, - QObject::tr ("-"))); - Props.append (new Property ("PDIBLC1", "0.39", false, - QObject::tr ("-"))); - Props.append (new Property ("PDIBLC2", "0.0086", false, - QObject::tr ("-"))); - Props.append (new Property ("PDIBLCB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PSCBE1", "4.24e8", false, - QObject::tr ("-"))); - Props.append (new Property ("PSCBE2", "1.0e-5", false, - QObject::tr ("-"))); - Props.append (new Property ("PVAG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("JS", "1.0E-4", false, - QObject::tr ("-"))); - Props.append (new Property ("JSW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PB", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NJ", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XTI", "3.0", false, - QObject::tr ("-"))); - Props.append (new Property ("MJ", "0.5", false, - QObject::tr ("-"))); - Props.append (new Property ("PBSW", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("MJSW", "0.33", false, - QObject::tr ("-"))); - Props.append (new Property ("PBSWG", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("MJSWG", "0.33", false, - QObject::tr ("-"))); - Props.append (new Property ("CJ", "5.0E-4", false, - QObject::tr ("-"))); - Props.append (new Property ("VFBCV", "-1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("VFB", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CJSW", "5.0E-10", false, - QObject::tr ("-"))); - Props.append (new Property ("CJSWG", "5.0e-10", false, - QObject::tr ("-"))); - Props.append (new Property ("TPB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TCJ", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TPBSW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TCJSW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TPBSWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TCJSWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("ACDE", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("MOIN", "15.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NOFF", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("VOFFCV", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LINT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LLC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LLN", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LWC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LWN", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LWL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LWLC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LMIN", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LMAX", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WR", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WINT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DWB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WLC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WLN", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WWC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WWN", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WWL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WWLC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WMIN", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WMAX", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("B0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("B1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CGSL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CGDL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CKAPPA", "0.6", false, - QObject::tr ("-"))); - Props.append (new Property ("CF", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CLC", "0.1e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("CLE", "0.6", false, - QObject::tr ("-"))); - Props.append (new Property ("DWC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DLC", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("ALPHA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("ALPHA1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("BETA0", "30.0", false, - QObject::tr ("-"))); - Props.append (new Property ("IJTH", "0.1", false, - QObject::tr ("-"))); - Props.append (new Property ("LCDSC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LCDSCB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LCDSCD", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LCIT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LNFACTOR", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LXJ", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LVSAT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LAT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LAGS", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LA1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LA2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LKETA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LNSUB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LNCH", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LNGATE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LGAMMA1", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LGAMMA2", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LVBX", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LVBM", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LXT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LK1", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LKT1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LKT1L", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LKT2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LK2", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LK3", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LK3B", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LW0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LNLX", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LDVT0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LDVT1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LDVT2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LDVT0W", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LDVT1W", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LDVT2W", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LDROUT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LDSUB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LVTH0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LVTHO", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LUA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LUA1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LUB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LUB1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LUC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LUC1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LU0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LUTE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LVOFF", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LELM", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LDELTA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LRDSW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LPRWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LPRWB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LPRT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LETA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LETAB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LPCLM", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LPDIBLC1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LPDIBLC2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LPDIBLCB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LPSCBE1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LPSCBE2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LPVAG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LWR", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LDWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LDWB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LB0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LB1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LCGSL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LCGDL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LCKAPPA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LCF", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LCLC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LCLE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LALPHA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LALPHA1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LBETA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LVFBCV", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LVFB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LACDE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LMOIN", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LNOFF", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LVOFFCV", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WCDSC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WCDSCB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WCDSCD", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WCIT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WNFACTOR", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WXJ", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WVSAT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WAT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WAGS", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WA1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WA2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WKETA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WNSUB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WNCH", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WNGATE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WGAMMA1", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WGAMMA2", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WVBX", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WVBM", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WXT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WK1", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WKT1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WKT1L", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WKT2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WK2", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WK3", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WK3B", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WW0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WNLX", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WDVT0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WDVT1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WDVT2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WDVT0W", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WDVT1W", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WDVT2W", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WDROUT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WDSUB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WVTH0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WVTHO", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WUA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WUA1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WUB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WUB1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WUC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WUC1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WU0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WUTE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WVOFF", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WELM", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WDELTA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WRDSW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WPRWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WPRWB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WPRT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WETA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WETAB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WPCLM", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WPDIBLC1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WPDIBLC2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WPDIBLCB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WPSCBE1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WPSCBE2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WPVAG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WWR", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WDWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WDWB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WB0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WB1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WCGSL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WCGDL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WCKAPPA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WCF", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WCLC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WCLE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WALPHA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WALPHA1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WBETA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WVFBCV", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WVFB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WACDE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WMOIN", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WNOFF", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WVOFFCV", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PCDSC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PCDSCB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PCDSCD", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PCIT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PNFACTOR", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PXJ", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PVSAT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PAT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PAGS", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PA1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PA2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PKETA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PNSUB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PNCH", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PNGATE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PGAMMA1", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PGAMMA2", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PVBX", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PVBM", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PXT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PK1", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PKT1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PKT1L", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PKT2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PK2", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PK3", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PK3B", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PW0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PNLX", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDVT0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDVT1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDVT2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDVT0W", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDVT1W", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDVT2W", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDROUT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDSUB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PVTH0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PVTHO", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PUA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PUA1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PUB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PUB1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PUC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PUC1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PU0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PUTE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PVOFF", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PELM", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDELTA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PRDSW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PPRWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PPRWB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PPRT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PETA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PETAB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PPCLM", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PPDIBLC1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PPDIBLC2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PPDIBLCB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PPSCBE1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PPSCBE2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PPVAG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PWR", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDWB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PB0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PB1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PCGSL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PCGDL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PCKAPPA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PCF", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PCLC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PCLE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PALPHA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PALPHA1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PBETA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PVFBCV", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PVFB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PACDE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PMOIN", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PNOFF", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PVOFFCV", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("KF", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("AF", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("EF", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("Temp", "26.85", false, - QObject::tr ("simulation temperature"))); - - createSymbol (); - tx = x2 + 4; - ty = y1 + 4; - Model = "bsim3v34pMOS"; - Name = "BSIM3_"; -} - -Component * bsim3v34pMOS::newOne() -{ - bsim3v34pMOS * p = new bsim3v34pMOS(); - p->Props.getFirst()->Value = Props.getFirst()->Value; - p->recreate(0); - return p; -} - -Element * bsim3v34pMOS::info(QString& Name, char * &BitmapFile, bool getNewOne) -{ - Name = QObject::tr("bsim3v34pMOS"); - BitmapFile = (char *) "bsim3v34pMOS"; - - if(getNewOne) return new bsim3v34pMOS(); - return 0; -} - -void bsim3v34pMOS::createSymbol() -{ - - Lines.append(new Line(-14,-13,-14, 13,QPen(Qt::darkBlue,3))); - Lines.append(new Line(-30, 0,-14, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10,-11, 0,-11,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0,-11, 0,-30,QPen(Qt::darkBlue,2))); - - Lines.append(new Line(-10, 11, 0, 11,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 11, 0, 30,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, 0, 20, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10,-16,-10, -7,QPen(Qt::darkBlue,3))); - - Lines.append(new Line(-10, 7,-10, 16,QPen(Qt::darkBlue,3))); - Lines.append(new Line( -4, 24, 4, 20,QPen(Qt::darkBlue,2))); - Lines.append(new Line( -5, 5, 0, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line( -5, -5, 0, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, -3,-10, 3,QPen(Qt::darkBlue,3))); - Lines.append(new Line(-10, -8,-10, -6,QPen(Qt::darkBlue,3))); - Lines.append(new Line(-10, 8,-10, 6,QPen(Qt::darkBlue,3))); - - - Ports.append(new Port( 0,-30)); // drain - Ports.append(new Port(-30, 0)); // gate - Ports.append(new Port( 0, 30)); // source - Ports.append(new Port( 20, 0)); // bulk - - x1 = -30; y1 = -30; - x2 = 20; y2 = 30; -} diff --git a/qucs/qucs/components/bsim3v34pMOS.h b/qucs/qucs/components/bsim3v34pMOS.h deleted file mode 100644 index 909966d6ee..0000000000 --- a/qucs/qucs/components/bsim3v34pMOS.h +++ /dev/null @@ -1,27 +0,0 @@ -/* - * bsim3v34pMOS.h - device definitions for bsim3v34pMOS module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ - -#ifndef bsim3v34pMOS_H -#define bsim3v34pMOS_H - -#include "component.h" - -class bsim3v34pMOS : public Component -{ - public: - bsim3v34pMOS(); - ~bsim3v34pMOS() { }; - Component* newOne(); - static Element* info(QString&, char* &, bool getNewOne=false); - protected: - void createSymbol(); -}; - -#endif /* bsim3v34pMOS_H */ diff --git a/qucs/qucs/components/bsim4v30nMOS.cpp b/qucs/qucs/components/bsim4v30nMOS.cpp deleted file mode 100644 index 42506ec8b6..0000000000 --- a/qucs/qucs/components/bsim4v30nMOS.cpp +++ /dev/null @@ -1,629 +0,0 @@ -/* - * bsim4v30nMOS.cpp - device implementations for bsim4v30nMOS module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ - -#include "bsim4v30nMOS.h" - -bsim4v30nMOS::bsim4v30nMOS() -{ - Description = QObject::tr ("bsim4v30nMOS verilog device"); - - - Props.append (new Property ("GMIN", "1e-12", false, - QObject::tr ("-"))); - Props.append (new Property ("PS", "12e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("PD", "12e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("AS", "12e-12", false, - QObject::tr ("-"))); - Props.append (new Property ("AD", "12e-12", false, - QObject::tr ("-"))); - Props.append (new Property ("CGBO", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CGDO", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CGSO", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("L", "3e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("W", "6e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("MOBMOD", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RDSMOD", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("IGCMOD", "0", false, - QObject::tr ("-"))); - Props.append (new Property ("IGBMOD", "0", false, - QObject::tr ("-"))); - Props.append (new Property ("CAPMOD", "2", false, - QObject::tr ("-"))); - Props.append (new Property ("RGATEMOD", "2", false, - QObject::tr ("-"))); - Props.append (new Property ("RBODYMOD", "0", false, - QObject::tr ("-"))); - Props.append (new Property ("DIOMOD", "1", false, - QObject::tr ("-"))); - Props.append (new Property ("TEMPMOD", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("GEOMOD", "0", false, - QObject::tr ("-"))); - Props.append (new Property ("RGEOMOD", "0", false, - QObject::tr ("-"))); - Props.append (new Property ("PERMOD", "1", false, - QObject::tr ("-"))); - Props.append (new Property ("TNOIMOD", "0", false, - QObject::tr ("-"))); - Props.append (new Property ("FNOIMOD", "0", false, - QObject::tr ("-"))); - Props.append (new Property ("EPSROX", "3.9", false, - QObject::tr ("-"))); - Props.append (new Property ("TOXE", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TOXP", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TOXM", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DTOX", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XJ", "1.5e-7", false, - QObject::tr ("-"))); - Props.append (new Property ("GAMMA1", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("GAMMA2", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NDEP", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NSUB", "6.0e16", false, - QObject::tr ("-"))); - Props.append (new Property ("NGATE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NSD", "1.0e20", false, - QObject::tr ("-"))); - Props.append (new Property ("VBX", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XT", "1.55e-7", false, - QObject::tr ("-"))); - Props.append (new Property ("RSH", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RSHG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("VTH0", "0.6", false, - QObject::tr ("-"))); - Props.append (new Property ("VFB", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PHIN", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("K1", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("K2", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("K3", "80.0", false, - QObject::tr ("-"))); - Props.append (new Property ("K3B", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("W0", "2.5e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("LPE0", "1.74e-7", false, - QObject::tr ("-"))); - Props.append (new Property ("LPEB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("VBM", "-3.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DVT0", "2.2", false, - QObject::tr ("-"))); - Props.append (new Property ("DVT1", "0.53", false, - QObject::tr ("-"))); - Props.append (new Property ("DVT2", "-0.032", false, - QObject::tr ("-"))); - Props.append (new Property ("DVTP0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DVTP1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DVT0W", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DVT1W", "5.3e6", false, - QObject::tr ("-"))); - Props.append (new Property ("DVT2W", "-0.032", false, - QObject::tr ("-"))); - Props.append (new Property ("U0", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("UA", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("UB", "1.0e-19", false, - QObject::tr ("-"))); - Props.append (new Property ("UC", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("EU", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("VSAT", "8.0e4", false, - QObject::tr ("-"))); - Props.append (new Property ("A0", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("AGS", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("B0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("B1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("KETA", "-0.047", false, - QObject::tr ("-"))); - Props.append (new Property ("A1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("A2", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WINT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LINT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DWB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("VOFF", "-0.08", false, - QObject::tr ("-"))); - Props.append (new Property ("VOFFL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("MINV", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NFACTOR", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("ETA0", "0.08", false, - QObject::tr ("-"))); - Props.append (new Property ("ETAB", "-0.07", false, - QObject::tr ("-"))); - Props.append (new Property ("DROUT", "0.56", false, - QObject::tr ("-"))); - Props.append (new Property ("DSUB", "0.56", false, - QObject::tr ("-"))); - Props.append (new Property ("CIT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CDSC", "2.4e-4", false, - QObject::tr ("-"))); - Props.append (new Property ("CDSCB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CDSCD", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PCLM", "1.3", false, - QObject::tr ("-"))); - Props.append (new Property ("PDIBL1", "0.39", false, - QObject::tr ("-"))); - Props.append (new Property ("PDIBL2", "0.0086", false, - QObject::tr ("-"))); - Props.append (new Property ("PDIBLB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PSCBE1", "4.24e8", false, - QObject::tr ("-"))); - Props.append (new Property ("PSCBE2", "1.0e-5", false, - QObject::tr ("-"))); - Props.append (new Property ("PVAG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DELTA", "0.01", false, - QObject::tr ("-"))); - Props.append (new Property ("FPROUT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDITS", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDITSD", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDITSL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LAMBDA", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("VTL", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LC", "5.0e-9", false, - QObject::tr ("-"))); - Props.append (new Property ("XN", "3.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RDSW", "200.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RDSWMIN", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RDW", "100.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RDWMIN", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RSW", "100.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RSWMIN", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PRWG", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PRWB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WR", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NRS", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NRD", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("ALPHA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("ALPHA1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("BETA0", "30.0", false, - QObject::tr ("-"))); - Props.append (new Property ("AGIDL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("BGIDL", "2.3e9", false, - QObject::tr ("-"))); - Props.append (new Property ("CGIDL", "0.5", false, - QObject::tr ("-"))); - Props.append (new Property ("EGIDL", "0.8", false, - QObject::tr ("-"))); - Props.append (new Property ("AIGBACC", "0.43", false, - QObject::tr ("-"))); - Props.append (new Property ("BIGBACC", "0.054", false, - QObject::tr ("-"))); - Props.append (new Property ("CIGBACC", "0.075", false, - QObject::tr ("-"))); - Props.append (new Property ("NIGBACC", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("AIGBINV", "0.35", false, - QObject::tr ("-"))); - Props.append (new Property ("BIGBINV", "0.03", false, - QObject::tr ("-"))); - Props.append (new Property ("CIGBINV", "0.006", false, - QObject::tr ("-"))); - Props.append (new Property ("EIGBINV", "1.1", false, - QObject::tr ("-"))); - Props.append (new Property ("NIGBINV", "3.0", false, - QObject::tr ("-"))); - Props.append (new Property ("AIGC", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("BIGC", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CIGC", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("AIGSD", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("BIGSD", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CIGSD", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DLCIG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NIGC", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("POXEDGE", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PIGCD", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NTOX", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TOXREF", "3.0e-9", false, - QObject::tr ("-"))); - Props.append (new Property ("XPART", "0.4", false, - QObject::tr ("-"))); - Props.append (new Property ("CGS0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CGD0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CGB0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CGSL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CGDL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CKAPPAS", "0.6", false, - QObject::tr ("-"))); - Props.append (new Property ("CKAPPAD", "0.6", false, - QObject::tr ("-"))); - Props.append (new Property ("CF", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CLC", "1.0e-7", false, - QObject::tr ("-"))); - Props.append (new Property ("CLE", "0.6", false, - QObject::tr ("-"))); - Props.append (new Property ("DLC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DWC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("VFBCV", "-1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NOFF", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("VOFFCV", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("ACDE", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("MOIN", "15.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XRCRG1", "12.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XRCRG2", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RBPB", "50.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RBPD", "50.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RBPS", "50.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RBDB", "50.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RBSB", "50.0", false, - QObject::tr ("-"))); - Props.append (new Property ("GBMIN", "1.0e-12", false, - QObject::tr ("-"))); - Props.append (new Property ("DMCG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DMCI", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DMDG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DMCGT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NF", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DWJ", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("MIN", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XGW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XGL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NGCON", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("IJTHSREV", "0.1", false, - QObject::tr ("-"))); - Props.append (new Property ("IJTHDREV", "0.1", false, - QObject::tr ("-"))); - Props.append (new Property ("IJTHSFWD", "0.1", false, - QObject::tr ("-"))); - Props.append (new Property ("IJTHDFWD", "0.1", false, - QObject::tr ("-"))); - Props.append (new Property ("XJBVS", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XJBVD", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("BVS", "10.0", false, - QObject::tr ("-"))); - Props.append (new Property ("BVD", "10.0", false, - QObject::tr ("-"))); - Props.append (new Property ("JSS", "1.0e-4", false, - QObject::tr ("-"))); - Props.append (new Property ("JSD", "1.0e-4", false, - QObject::tr ("-"))); - Props.append (new Property ("JSWS", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("JSWD", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("JSWGS", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("JSWGD", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CJS", "5.0e-4", false, - QObject::tr ("-"))); - Props.append (new Property ("CJD", "5.0e-4", false, - QObject::tr ("-"))); - Props.append (new Property ("MJS", "0.5", false, - QObject::tr ("-"))); - Props.append (new Property ("MJD", "0.5", false, - QObject::tr ("-"))); - Props.append (new Property ("MJSWS", "0.33", false, - QObject::tr ("-"))); - Props.append (new Property ("MJSWD", "0.33", false, - QObject::tr ("-"))); - Props.append (new Property ("CJSWS", "5.0e-10", false, - QObject::tr ("-"))); - Props.append (new Property ("CJSWD", "5.0e-10", false, - QObject::tr ("-"))); - Props.append (new Property ("CJSWGS", "5.0e-10", false, - QObject::tr ("-"))); - Props.append (new Property ("CJSWGD", "5.0e-10", false, - QObject::tr ("-"))); - Props.append (new Property ("MJSWGS", "0.33", false, - QObject::tr ("-"))); - Props.append (new Property ("MJSWGD", "0.33", false, - QObject::tr ("-"))); - Props.append (new Property ("PBS", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PBD", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PBSWS", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PBSWD", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PBSWGS", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PBSWGD", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TNOM", "27", false, - QObject::tr ("-"))); - Props.append (new Property ("UTE", "-1.5", false, - QObject::tr ("-"))); - Props.append (new Property ("KT1", "-0.11", false, - QObject::tr ("-"))); - Props.append (new Property ("KT1L", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("KT2", "0.022", false, - QObject::tr ("-"))); - Props.append (new Property ("UA1", "1.0e-9", false, - QObject::tr ("-"))); - Props.append (new Property ("UB1", "-1.0e-18", false, - QObject::tr ("-"))); - Props.append (new Property ("UC1", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("AT", "3.3e4", false, - QObject::tr ("-"))); - Props.append (new Property ("PRT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NJS", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NJD", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XTIS", "3.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XTID", "3.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TPB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TPBSW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TPBSWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TCJ", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TCJSW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TCJSWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("SA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("SB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("SD", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("SAREF", "1e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("SBREF", "1e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("WLOD", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("KU0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("KVSAT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TKU0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LKU0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WKU0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PKU0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LLODKU0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WLODKU0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("KVTH0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LKVTH0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WKVTH0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PKVTH0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LLODVTH", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WLODVTH", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("STK2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LODK2", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("STETA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LODETA0", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WLN", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WWN", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WWL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LLN", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LWN", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LWL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LLC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LWC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LWLC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WLC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WWC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WWLC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NTNOI", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("KF", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("AF", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("EF", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TEMP", "27", false, - QObject::tr ("-"))); - - createSymbol (); - tx = x2 + 4; - ty = y1 + 4; - Model = "bsim4v30nMOS"; - Name = "BSIM4_"; -} - -Component * bsim4v30nMOS::newOne() -{ - bsim4v30nMOS * p = new bsim4v30nMOS(); - p->Props.getFirst()->Value = Props.getFirst()->Value; - p->recreate(0); - return p; -} - -Element * bsim4v30nMOS::info(QString& Name, char * &BitmapFile, bool getNewOne) -{ - Name = QObject::tr("bsim4v30nMOS"); - BitmapFile = (char *) "bsim4v30nMOS"; - - if(getNewOne) return new bsim4v30nMOS(); - return 0; -} - -void bsim4v30nMOS::createSymbol() -{ - // put in here symbol drawing code and terminal definitions - Lines.append(new Line(-14,-13,-14, 13,QPen(Qt::darkBlue,3))); - Lines.append(new Line(-30, 0,-14, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10,-11, 0,-11,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0,-11, 0,-30,QPen(Qt::darkBlue,2))); - - Lines.append(new Line(-10, 11, 0, 11,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 11, 0, 30,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, 0, 20, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10,-16,-10, -7,QPen(Qt::darkBlue,3))); - - Lines.append(new Line(-10, 7,-10, 16,QPen(Qt::darkBlue,3))); - Lines.append(new Line( -4, 24, 4, 20,QPen(Qt::darkBlue,2))); - Lines.append(new Line( -9, 0, -4, -5,QPen(Qt::darkBlue,2))); - Lines.append(new Line( -9, 0, -4, 5,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, -3,-10, 3,QPen(Qt::darkBlue,3))); - Lines.append(new Line(-10, -8,-10, -6,QPen(Qt::darkBlue,3))); - Lines.append(new Line(-10, 8,-10, 6,QPen(Qt::darkBlue,3))); - - - - Ports.append(new Port( 0,-30)); // drain - Ports.append(new Port(-30, 0)); // gate - Ports.append(new Port( 0, 30)); // source - Ports.append(new Port( 20, 0)); // bulk - - x1 = -30; y1 = -30; - x2 = 20; y2 = 30; -} diff --git a/qucs/qucs/components/bsim4v30nMOS.h b/qucs/qucs/components/bsim4v30nMOS.h deleted file mode 100644 index c0b897be39..0000000000 --- a/qucs/qucs/components/bsim4v30nMOS.h +++ /dev/null @@ -1,27 +0,0 @@ -/* - * bsim4v30nMOS.h - device definitions for bsim4v30nMOS module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ - -#ifndef bsim4v30nMOS_H -#define bsim4v30nMOS_H - -#include "component.h" - -class bsim4v30nMOS : public Component -{ - public: - bsim4v30nMOS(); - ~bsim4v30nMOS() { }; - Component* newOne(); - static Element* info(QString&, char* &, bool getNewOne=false); - protected: - void createSymbol(); -}; - -#endif /* bsim4v30nMOS_H */ diff --git a/qucs/qucs/components/bsim4v30pMOS.cpp b/qucs/qucs/components/bsim4v30pMOS.cpp deleted file mode 100644 index 3a617885c7..0000000000 --- a/qucs/qucs/components/bsim4v30pMOS.cpp +++ /dev/null @@ -1,626 +0,0 @@ -/* - * bsim4v30pMOS.cpp - device implementations for bsim4v30pMOS module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ - -#include "bsim4v30pMOS.h" - -bsim4v30pMOS::bsim4v30pMOS() -{ - Description = QObject::tr ("bsim4v30pMOS verilog device"); - - Props.append (new Property ("GMIN", "1e-12", false, - QObject::tr ("-"))); - Props.append (new Property ("PS", "12e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("PD", "12e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("AS", "12e-12", false, - QObject::tr ("-"))); - Props.append (new Property ("AD", "12e-12", false, - QObject::tr ("-"))); - Props.append (new Property ("CGBO", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CGDO", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CGSO", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("L", "3e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("W", "6e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("MOBMOD", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RDSMOD", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("IGCMOD", "0", false, - QObject::tr ("-"))); - Props.append (new Property ("IGBMOD", "0", false, - QObject::tr ("-"))); - Props.append (new Property ("CAPMOD", "2", false, - QObject::tr ("-"))); - Props.append (new Property ("RGATEMOD", "2", false, - QObject::tr ("-"))); - Props.append (new Property ("RBODYMOD", "0", false, - QObject::tr ("-"))); - Props.append (new Property ("DIOMOD", "1", false, - QObject::tr ("-"))); - Props.append (new Property ("TEMPMOD", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("GEOMOD", "0", false, - QObject::tr ("-"))); - Props.append (new Property ("RGEOMOD", "0", false, - QObject::tr ("-"))); - Props.append (new Property ("PERMOD", "1", false, - QObject::tr ("-"))); - Props.append (new Property ("TNOIMOD", "0", false, - QObject::tr ("-"))); - Props.append (new Property ("FNOIMOD", "0", false, - QObject::tr ("-"))); - Props.append (new Property ("EPSROX", "3.9", false, - QObject::tr ("-"))); - Props.append (new Property ("TOXE", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TOXP", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TOXM", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DTOX", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XJ", "1.5e-7", false, - QObject::tr ("-"))); - Props.append (new Property ("GAMMA1", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("GAMMA2", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NDEP", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NSUB", "6.0e16", false, - QObject::tr ("-"))); - Props.append (new Property ("NGATE", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NSD", "1.0e20", false, - QObject::tr ("-"))); - Props.append (new Property ("VBX", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XT", "1.55e-7", false, - QObject::tr ("-"))); - Props.append (new Property ("RSH", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RSHG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("VTH0", "-0.6", false, - QObject::tr ("-"))); - Props.append (new Property ("VFB", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PHIN", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("K1", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("K2", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("K3", "80.0", false, - QObject::tr ("-"))); - Props.append (new Property ("K3B", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("W0", "2.5e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("LPE0", "1.74e-7", false, - QObject::tr ("-"))); - Props.append (new Property ("LPEB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("VBM", "-3.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DVT0", "2.2", false, - QObject::tr ("-"))); - Props.append (new Property ("DVT1", "0.53", false, - QObject::tr ("-"))); - Props.append (new Property ("DVT2", "-0.032", false, - QObject::tr ("-"))); - Props.append (new Property ("DVTP0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DVTP1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DVT0W", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DVT1W", "5.3e6", false, - QObject::tr ("-"))); - Props.append (new Property ("DVT2W", "-0.032", false, - QObject::tr ("-"))); - Props.append (new Property ("U0", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("UA", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("UB", "1.0e-19", false, - QObject::tr ("-"))); - Props.append (new Property ("UC", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("EU", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("VSAT", "8.0e4", false, - QObject::tr ("-"))); - Props.append (new Property ("A0", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("AGS", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("B0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("B1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("KETA", "-0.047", false, - QObject::tr ("-"))); - Props.append (new Property ("A1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("A2", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WINT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LINT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DWB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("VOFF", "-0.08", false, - QObject::tr ("-"))); - Props.append (new Property ("VOFFL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("MINV", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NFACTOR", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("ETA0", "0.08", false, - QObject::tr ("-"))); - Props.append (new Property ("ETAB", "-0.07", false, - QObject::tr ("-"))); - Props.append (new Property ("DROUT", "0.56", false, - QObject::tr ("-"))); - Props.append (new Property ("DSUB", "0.56", false, - QObject::tr ("-"))); - Props.append (new Property ("CIT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CDSC", "2.4e-4", false, - QObject::tr ("-"))); - Props.append (new Property ("CDSCB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CDSCD", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PCLM", "1.3", false, - QObject::tr ("-"))); - Props.append (new Property ("PDIBL1", "0.39", false, - QObject::tr ("-"))); - Props.append (new Property ("PDIBL2", "0.0086", false, - QObject::tr ("-"))); - Props.append (new Property ("PDIBLB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PSCBE1", "4.24e8", false, - QObject::tr ("-"))); - Props.append (new Property ("PSCBE2", "1.0e-5", false, - QObject::tr ("-"))); - Props.append (new Property ("PVAG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DELTA", "0.01", false, - QObject::tr ("-"))); - Props.append (new Property ("FPROUT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDITS", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDITSD", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PDITSL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LAMBDA", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("VTL", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LC", "5.0e-9", false, - QObject::tr ("-"))); - Props.append (new Property ("XN", "3.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RDSW", "200.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RDSWMIN", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RDW", "100.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RDWMIN", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RSW", "100.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RSWMIN", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PRWG", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PRWB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WR", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NRS", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NRD", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("ALPHA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("ALPHA1", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("BETA0", "30.0", false, - QObject::tr ("-"))); - Props.append (new Property ("AGIDL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("BGIDL", "2.3e9", false, - QObject::tr ("-"))); - Props.append (new Property ("CGIDL", "0.5", false, - QObject::tr ("-"))); - Props.append (new Property ("EGIDL", "0.8", false, - QObject::tr ("-"))); - Props.append (new Property ("AIGBACC", "0.43", false, - QObject::tr ("-"))); - Props.append (new Property ("BIGBACC", "0.054", false, - QObject::tr ("-"))); - Props.append (new Property ("CIGBACC", "0.075", false, - QObject::tr ("-"))); - Props.append (new Property ("NIGBACC", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("AIGBINV", "0.35", false, - QObject::tr ("-"))); - Props.append (new Property ("BIGBINV", "0.03", false, - QObject::tr ("-"))); - Props.append (new Property ("CIGBINV", "0.006", false, - QObject::tr ("-"))); - Props.append (new Property ("EIGBINV", "1.1", false, - QObject::tr ("-"))); - Props.append (new Property ("NIGBINV", "3.0", false, - QObject::tr ("-"))); - Props.append (new Property ("AIGC", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("BIGC", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CIGC", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("AIGSD", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("BIGSD", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CIGSD", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DLCIG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NIGC", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("POXEDGE", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PIGCD", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NTOX", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TOXREF", "3.0e-9", false, - QObject::tr ("-"))); - Props.append (new Property ("XPART", "0.4", false, - QObject::tr ("-"))); - Props.append (new Property ("CGS0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CGD0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CGB0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CGSL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CGDL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CKAPPAS", "0.6", false, - QObject::tr ("-"))); - Props.append (new Property ("CKAPPAD", "0.6", false, - QObject::tr ("-"))); - Props.append (new Property ("CF", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CLC", "1.0e-7", false, - QObject::tr ("-"))); - Props.append (new Property ("CLE", "0.6", false, - QObject::tr ("-"))); - Props.append (new Property ("DLC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DWC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("VFBCV", "-1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NOFF", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("VOFFCV", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("ACDE", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("MOIN", "15.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XRCRG1", "12.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XRCRG2", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RBPB", "50.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RBPD", "50.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RBPS", "50.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RBDB", "50.0", false, - QObject::tr ("-"))); - Props.append (new Property ("RBSB", "50.0", false, - QObject::tr ("-"))); - Props.append (new Property ("GBMIN", "1.0e-12", false, - QObject::tr ("-"))); - Props.append (new Property ("DMCG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DMCI", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DMDG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DMCGT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NF", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("DWJ", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("MIN", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XGW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XGL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NGCON", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("IJTHSREV", "0.1", false, - QObject::tr ("-"))); - Props.append (new Property ("IJTHDREV", "0.1", false, - QObject::tr ("-"))); - Props.append (new Property ("IJTHSFWD", "0.1", false, - QObject::tr ("-"))); - Props.append (new Property ("IJTHDFWD", "0.1", false, - QObject::tr ("-"))); - Props.append (new Property ("XJBVS", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XJBVD", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("BVS", "10.0", false, - QObject::tr ("-"))); - Props.append (new Property ("BVD", "10.0", false, - QObject::tr ("-"))); - Props.append (new Property ("JSS", "1.0e-4", false, - QObject::tr ("-"))); - Props.append (new Property ("JSD", "1.0e-4", false, - QObject::tr ("-"))); - Props.append (new Property ("JSWS", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("JSWD", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("JSWGS", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("JSWGD", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("CJS", "5.0e-4", false, - QObject::tr ("-"))); - Props.append (new Property ("CJD", "5.0e-4", false, - QObject::tr ("-"))); - Props.append (new Property ("MJS", "0.5", false, - QObject::tr ("-"))); - Props.append (new Property ("MJD", "0.5", false, - QObject::tr ("-"))); - Props.append (new Property ("MJSWS", "0.33", false, - QObject::tr ("-"))); - Props.append (new Property ("MJSWD", "0.33", false, - QObject::tr ("-"))); - Props.append (new Property ("CJSWS", "5.0e-10", false, - QObject::tr ("-"))); - Props.append (new Property ("CJSWD", "5.0e-10", false, - QObject::tr ("-"))); - Props.append (new Property ("CJSWGS", "5.0e-10", false, - QObject::tr ("-"))); - Props.append (new Property ("CJSWGD", "5.0e-10", false, - QObject::tr ("-"))); - Props.append (new Property ("MJSWGS", "0.33", false, - QObject::tr ("-"))); - Props.append (new Property ("MJSWGD", "0.33", false, - QObject::tr ("-"))); - Props.append (new Property ("PBS", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PBD", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PBSWS", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PBSWD", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PBSWGS", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PBSWGD", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TNOM", "27", false, - QObject::tr ("-"))); - Props.append (new Property ("UTE", "-1.5", false, - QObject::tr ("-"))); - Props.append (new Property ("KT1", "-0.11", false, - QObject::tr ("-"))); - Props.append (new Property ("KT1L", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("KT2", "0.022", false, - QObject::tr ("-"))); - Props.append (new Property ("UA1", "1.0e-9", false, - QObject::tr ("-"))); - Props.append (new Property ("UB1", "-1.0e-18", false, - QObject::tr ("-"))); - Props.append (new Property ("UC1", "-99.0", false, - QObject::tr ("-"))); - Props.append (new Property ("AT", "3.3e4", false, - QObject::tr ("-"))); - Props.append (new Property ("PRT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NJS", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NJD", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XTIS", "3.0", false, - QObject::tr ("-"))); - Props.append (new Property ("XTID", "3.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TPB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TPBSW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TPBSWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TCJ", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TCJSW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TCJSWG", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("SA", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("SB", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("SD", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("SAREF", "1e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("SBREF", "1e-6", false, - QObject::tr ("-"))); - Props.append (new Property ("WLOD", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("KU0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("KVSAT", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TKU0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LKU0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WKU0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PKU0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LLODKU0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WLODKU0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("KVTH0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LKVTH0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WKVTH0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("PKVTH0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LLODVTH", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WLODVTH", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("STK2", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LODK2", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("STETA0", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LODETA0", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WLN", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WWN", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WWL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LLN", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LW", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LWN", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LWL", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LLC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LWC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("LWLC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WLC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WWC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("WWLC", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("NTNOI", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("KF", "0.0", false, - QObject::tr ("-"))); - Props.append (new Property ("AF", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("EF", "1.0", false, - QObject::tr ("-"))); - Props.append (new Property ("TEMP", "27", false, - QObject::tr ("-"))); - - createSymbol (); - tx = x2 + 4; - ty = y1 + 4; - Model = "bsim4v30pMOS"; - Name = "BSIM4_"; -} - -Component * bsim4v30pMOS::newOne() -{ - bsim4v30pMOS * p = new bsim4v30pMOS(); - p->Props.getFirst()->Value = Props.getFirst()->Value; - p->recreate(0); - return p; -} - -Element * bsim4v30pMOS::info(QString& Name, char * &BitmapFile, bool getNewOne) -{ - Name = QObject::tr("bsim4v30pMOS"); - BitmapFile = (char *) "bsim4v30pMOS"; - - if(getNewOne) return new bsim4v30pMOS(); - return 0; -} - -void bsim4v30pMOS::createSymbol() -{ - Lines.append(new Line(-14,-13,-14, 13,QPen(Qt::darkBlue,3))); - Lines.append(new Line(-30, 0,-14, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10,-11, 0,-11,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0,-11, 0,-30,QPen(Qt::darkBlue,2))); - - Lines.append(new Line(-10, 11, 0, 11,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 11, 0, 30,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, 0, 20, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10,-16,-10, -7,QPen(Qt::darkBlue,3))); - - Lines.append(new Line(-10, 7,-10, 16,QPen(Qt::darkBlue,3))); - Lines.append(new Line( -4, 24, 4, 20,QPen(Qt::darkBlue,2))); - Lines.append(new Line( -5, 5, 0, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line( -5, -5, 0, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, -3,-10, 3,QPen(Qt::darkBlue,3))); - Lines.append(new Line(-10, -8,-10, -6,QPen(Qt::darkBlue,3))); - Lines.append(new Line(-10, 8,-10, 6,QPen(Qt::darkBlue,3))); - - - Ports.append(new Port( 0,-30)); // drain - Ports.append(new Port(-30, 0)); // gate - Ports.append(new Port( 0, 30)); // source - Ports.append(new Port( 20, 0)); // bulk - - x1 = -30; y1 = -30; - x2 = 20; y2 = 30; -} diff --git a/qucs/qucs/components/bsim4v30pMOS.h b/qucs/qucs/components/bsim4v30pMOS.h deleted file mode 100644 index b1c692cb72..0000000000 --- a/qucs/qucs/components/bsim4v30pMOS.h +++ /dev/null @@ -1,27 +0,0 @@ -/* - * bsim4v30pMOS.h - device definitions for bsim4v30pMOS module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ - -#ifndef bsim4v30pMOS_H -#define bsim4v30pMOS_H - -#include "component.h" - -class bsim4v30pMOS : public Component -{ - public: - bsim4v30pMOS(); - ~bsim4v30pMOS() { }; - Component* newOne(); - static Element* info(QString&, char* &, bool getNewOne=false); - protected: - void createSymbol(); -}; - -#endif /* bsim4v30pMOS_H */ diff --git a/qucs/qucs/components/components.h b/qucs/qucs/components/components.h index 46da118598..6e2a446d35 100644 --- a/qucs/qucs/components/components.h +++ b/qucs/qucs/components/components.h @@ -139,25 +139,12 @@ #include "rfedd.h" #include "rfedd2p.h" -#include "hicumL2V2p1.h" -#include "HBT_X.h" #include "mod_amp.h" -#include "hic2_full.h" #include "log_amp.h" -#include "hic0_full.h" #include "potentiometer.h" #include "MESFET.h" #include "EKV26MOS.h" -#include "bsim3v34nMOS.h" -#include "bsim3v34pMOS.h" -#include "bsim4v30nMOS.h" -#include "bsim4v30pMOS.h" -#include "hicumL0V1p2.h" -#include "hicumL0V1p2g.h" -#include "hicumL0V1p3.h" -#include "hicumL2V2p23.h" -#include "hicumL2V2p24.h" -#include "hicumL2V2p31n.h" + #include "photodiode.h" #include "phototransistor.h" #include "nigbt.h" diff --git a/qucs/qucs/components/hic0_full.cpp b/qucs/qucs/components/hic0_full.cpp deleted file mode 100644 index ae2d511838..0000000000 --- a/qucs/qucs/components/hic0_full.cpp +++ /dev/null @@ -1,364 +0,0 @@ -/* - * hic0_full.cpp - device implementations for hic0_full module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ -#include "node.h" -#include "hic0_full.h" - -hic0_full::hic0_full() -{ - Description = QObject::tr ("HICUM Level 0 v1.12 verilog device"); - - Props.append (new Property ("Type", "npn", true, - QObject::tr ("polarity") + " [npn, pnp]")); - Props.append (new Property ("is", "1.0e-16", false, - QObject::tr ("(Modified) saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mcf", "1.00", false, - QObject::tr ("Non-ideality coefficient of forward collector current"))); - Props.append (new Property ("mcr", "1.00", false, - QObject::tr ("Non-ideality coefficient of reverse collector current"))); - Props.append (new Property ("vef", "1.0e6", false, - QObject::tr ("forward Early voltage (normalization volt.)") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("iqf", "1.0e6", false, - QObject::tr ("forward d.c. high-injection roll-off current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("iqr", "1.0e6", false, - QObject::tr ("inverse d.c. high-injection roll-off current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("iqfh", "1.0e6", false, - QObject::tr ("high-injection correction current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("tfh", "1.0e6", false, - QObject::tr ("high-injection correction factor"))); - Props.append (new Property ("ibes", "1e-18", false, - QObject::tr ("BE saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mbe", "1.0", false, - QObject::tr ("BE non-ideality factor"))); - Props.append (new Property ("ires", "0.0", false, - QObject::tr ("BE recombination saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mre", "2.0", false, - QObject::tr ("BE recombination non-ideality factor"))); - Props.append (new Property ("ibcs", "0.0", false, - QObject::tr ("BC saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mbc", "1.0", false, - QObject::tr ("BC non-ideality factor"))); - Props.append (new Property ("cje0", "1.0e-20", false, - QObject::tr ("Zero-bias BE depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vde", "0.9", false, - QObject::tr ("BE built-in voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("ze", "0.5", false, - QObject::tr ("BE exponent factor"))); - Props.append (new Property ("aje", "2.5", false, - QObject::tr ("Ratio of maximum to zero-bias value"))); - Props.append (new Property ("t0", "0.0", false, - QObject::tr ("low current transit time at Vbici=0") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("dt0h", "0.0", false, - QObject::tr ("Base width modulation contribution") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("tbvl", "0.0", false, - QObject::tr ("SCR width modulation contribution") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("tef0", "0.0", false, - QObject::tr ("Storage time in neutral emitter") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("gte", "1.0", false, - QObject::tr ("Exponent factor for emitter transit time"))); - Props.append (new Property ("thcs", "0.0", false, - QObject::tr ("Saturation time at high current densities") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("ahc", "0.1", false, - QObject::tr ("Smoothing factor for current dependence"))); - Props.append (new Property ("tr", "0.0", false, - QObject::tr ("Storage time at inverse operation") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("rci0", "150", false, - QObject::tr ("Low-field collector resistance under emitter") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("vlim", "0.5", false, - QObject::tr ("Voltage dividing ohmic and satur.region") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vpt", "100", false, - QObject::tr ("Punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vces", "0.1", false, - QObject::tr ("Saturation voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("cjci0", "1.0e-20", false, - QObject::tr ("Total zero-bias BC depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vdci", "0.7", false, - QObject::tr ("BC built-in voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zci", "0.333", false, - QObject::tr ("BC exponent factor"))); - Props.append (new Property ("vptci", "100", false, - QObject::tr ("Punch-through voltage of BC junction") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("cjcx0", "1.0e-20", false, - QObject::tr ("Zero-bias external BC depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vdcx", "0.7", false, - QObject::tr ("External BC built-in voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zcx", "0.333", false, - QObject::tr ("External BC exponent factor"))); - Props.append (new Property ("vptcx", "100", false, - QObject::tr ("Punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("fbc", "1.0", false, - QObject::tr ("Split factor = Cjci0/Cjc0"))); - Props.append (new Property ("rbi0", "0.0", false, - QObject::tr ("Internal base resistance at zero-bias") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("vr0e", "2.5", false, - QObject::tr ("forward Early voltage (normalization volt.)") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vr0c", "1.0e6", false, - QObject::tr ("forward Early voltage (normalization volt.)") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("fgeo", "0.656", false, - QObject::tr ("Geometry factor"))); - Props.append (new Property ("rbx", "0.0", false, - QObject::tr ("External base series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("rcx", "0.0", false, - QObject::tr ("Emitter series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("re", "0.0", false, - QObject::tr ("External collector series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("itss", "0.0", false, - QObject::tr ("Substrate transistor transfer saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("msf", "1.0", false, - QObject::tr ("Substrate transistor transfer current non-ideality factor"))); - Props.append (new Property ("iscs", "0.0", false, - QObject::tr ("SC saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("msc", "1.0", false, - QObject::tr ("SC non-ideality factor"))); - Props.append (new Property ("cjs0", "1.0e-20", false, - QObject::tr ("Zero-bias SC depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vds", "0.3", false, - QObject::tr ("SC built-in voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zs", "0.3", false, - QObject::tr ("External SC exponent factor"))); - Props.append (new Property ("vpts", "100", false, - QObject::tr ("SC punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("cbcpar", "0.0", false, - QObject::tr ("Collector-base isolation (overlap) capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("cbepar", "0.0", false, - QObject::tr ("Emitter-base oxide capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("eavl", "0.0", false, - QObject::tr ("Exponent factor"))); - Props.append (new Property ("kavl", "0.0", false, - QObject::tr ("Prefactor"))); - Props.append (new Property ("kf", "0.0", false, - QObject::tr ("flicker noise coefficient") - +" ("+QObject::tr ("M^(1-AF)")+")")); - Props.append (new Property ("af", "2.0", false, - QObject::tr ("flicker noise exponent factor"))); - Props.append (new Property ("vgb", "1.2", false, - QObject::tr ("Bandgap-voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vge", "1.17", false, - QObject::tr ("Effective emitter bandgap-voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vgc", "1.17", false, - QObject::tr ("Effective collector bandgap-voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vgs", "1.17", false, - QObject::tr ("Effective substrate bandgap-voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("f1vg", "-1.02377e-4", false, - QObject::tr ("Coefficient K1 in T-dependent bandgap equation") - +" ("+QObject::tr ("V/K")+")")); - Props.append (new Property ("f2vg", "4.3215e-4", false, - QObject::tr ("Coefficient K2 in T-dependent bandgap equation") - +" ("+QObject::tr ("V/K")+")")); - Props.append (new Property ("alt0", "0.0", false, - QObject::tr ("Frist-order TC of tf0") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("kt0", "0.0", false, - QObject::tr ("Second-order TC of tf0") - +" ("+QObject::tr ("1/K^2")+")")); - Props.append (new Property ("zetact", "3.0", false, - QObject::tr ("Exponent coefficient in transfer current temperature dependence"))); - Props.append (new Property ("zetabet", "3.5", false, - QObject::tr ("Exponent coefficient in BE junction current temperature dependence"))); - Props.append (new Property ("zetaci", "0.0", false, - QObject::tr ("TC of epi-collector diffusivity"))); - Props.append (new Property ("alvs", "0.0", false, - QObject::tr ("Relative TC of satur.drift velocity") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("alces", "0.0", false, - QObject::tr ("Relative TC of vces") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("zetarbi", "0.0", false, - QObject::tr ("TC of internal base resistance"))); - Props.append (new Property ("zetarbx", "0.0", false, - QObject::tr ("TC of external base resistance"))); - Props.append (new Property ("zetarcx", "0.0", false, - QObject::tr ("TC of external collector resistance"))); - Props.append (new Property ("zetare", "0.0", false, - QObject::tr ("TC of emitter resistances"))); - Props.append (new Property ("alkav", "0.0", false, - QObject::tr ("TC of avalanche prefactor") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("aleav", "0.0", false, - QObject::tr ("TC of avalanche exponential factor") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("flsh", "0", false, - QObject::tr ("Flag for self-heating calculation"))); - Props.append (new Property ("rth", "0.0", false, - QObject::tr ("Thermal resistance") - +" ("+QObject::tr ("K/W")+")")); - Props.append (new Property ("cth", "0.0", false, - QObject::tr ("Thermal capacitance") - +" ("+QObject::tr ("Ws/K")+")")); - Props.append (new Property ("tnom", "27", false, - QObject::tr ("Temperature for which parameters are valid") - +" ("+QObject::tr ("C")+")")); - Props.append (new Property ("dt", "0.0", false, - QObject::tr ("Temperature change for particular transistor") - +" ("+QObject::tr ("K")+")")); - Props.append (new Property ("Temp", "26.85", false, - QObject::tr ("simulation temperature"))); - - createSymbol (); - tx = x2 + 4; - ty = y1 + 4; - Model = "hic0_full"; - Name = "T"; -} - -Component * hic0_full::newOne() -{ - hic0_full * p = new hic0_full(); - p->Props.getFirst()->Value = Props.getFirst()->Value; - p->recreate(0); - return p; -} - -Element * hic0_full::info(QString& Name, char * &BitmapFile, bool getNewOne) -{ - Name = QObject::tr("npn HICUM L0 v1.12"); - BitmapFile = (char *) "npnsub_therm"; - - if(getNewOne) return new hic0_full(); - return 0; -} - -Element * hic0_full::info_pnp(QString& Name, char * &BitmapFile, bool getNewOne) -{ - Name = QObject::tr("pnp HICUM L0 v1.12"); - BitmapFile = (char *) "pnpsub_therm"; - - if(getNewOne) - { - hic0_full* p = new hic0_full(); - p->Props.getFirst()->Value = "pnp"; - p->recreate(0); - return p; - } - return 0; -} - -void hic0_full::createSymbol() -{ - // normal bipolar - Lines.append(new Line(-10,-15,-10, 15,QPen(Qt::darkBlue,3))); - Lines.append(new Line(-30, 0,-10, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, -5, 0,-15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0,-15, 0,-30,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, 5, 0, 15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 15, 0, 30,QPen(Qt::darkBlue,2))); - - // substrate node - Lines.append(new Line( 9, 0, 30, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 9, -7, 9, 7,QPen(Qt::darkBlue,3))); - - // thermal node - Lines.append(new Line(-30, 20,-20, 20,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-20, 17,-20, 23,QPen(Qt::darkBlue,2))); - - // arrow - if(Props.getFirst()->Value == "npn") { - Lines.append(new Line( -6, 15, 0, 15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 9, 0, 15,QPen(Qt::darkBlue,2))); - } else { - Lines.append(new Line( -5, 10, -5, 16,QPen(Qt::darkBlue,2))); - Lines.append(new Line( -5, 10, 1, 10,QPen(Qt::darkBlue,2))); - } - - // H - Lines.append(new Line(-30,-30,-30,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-30,-27,-26,-27,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-26,-30,-26,-24,QPen(Qt::darkBlue,1))); - // I - Lines.append(new Line(-24,-30,-24,-24,QPen(Qt::darkBlue,1))); - // C - Lines.append(new Line(-22,-30,-22,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-22,-30,-19,-30,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-22,-24,-19,-24,QPen(Qt::darkBlue,1))); - // U - Lines.append(new Line(-17,-30,-17,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-14,-30,-14,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-17,-24,-14,-24,QPen(Qt::darkBlue,1))); - // M - Lines.append(new Line(-12,-30,-12,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line( -8,-30, -8,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-12,-30,-10,-28,QPen(Qt::darkBlue,1))); - Lines.append(new Line( -8,-30,-10,-28,QPen(Qt::darkBlue,1))); - - // terminal definitions - Ports.append(new Port( 0,-30)); // collector - Ports.append(new Port(-30, 0)); // base - Ports.append(new Port( 0, 30)); // emitter - Ports.append(new Port( 30, 0)); // substrate - Ports.append(new Port(-30, 20)); // thermal node - - // relative boundings - x1 = -30; y1 = -30; - x2 = 30; y2 = 30; -} - -QString hic0_full::netlist() -{ - QString s = "hic0_full:"+Name; - - // output all node names - foreach(Port *p1, Ports) - s += " "+p1->Connection->Name; // node names - - // output type npn/pnp property - Property *p2 = Props.first(); - if(p2->Value == "npn") - s += " npn=\"1\""; - else - s += " pnp=\"1\""; - - // output all remaining properties - for(p2 = Props.next(); p2 != 0; p2 = Props.next()) - s += " "+p2->Name+"=\""+p2->Value+"\""; - - return s + '\n'; -} diff --git a/qucs/qucs/components/hic0_full.h b/qucs/qucs/components/hic0_full.h deleted file mode 100644 index 81dde44fda..0000000000 --- a/qucs/qucs/components/hic0_full.h +++ /dev/null @@ -1,29 +0,0 @@ -/* - * hic0_full.h - device definitions for hic0_full module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ - -#ifndef hic0_full_H -#define hic0_full_H - -#include "component.h" - -class hic0_full : public MultiViewComponent -{ - public: - hic0_full(); - ~hic0_full() { }; - Component* newOne(); - static Element* info(QString&, char* &, bool getNewOne=false); - static Element* info_pnp(QString&, char* &, bool getNewOne=false); - protected: - void createSymbol(); - QString netlist(); -}; - -#endif /* hic0_full_H */ diff --git a/qucs/qucs/components/hic2_full.cpp b/qucs/qucs/components/hic2_full.cpp deleted file mode 100644 index e0916d4c9e..0000000000 --- a/qucs/qucs/components/hic2_full.cpp +++ /dev/null @@ -1,383 +0,0 @@ -/* - * hic2_full.cpp - device implementations for hic2_full module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ - -#include "hic2_full.h" - -hic2_full::hic2_full() -{ - Description = QObject::tr ("HICUM Level 2 v2.22 verilog device"); - - Props.append (new Property ("c10", "2.0E-30", false, - QObject::tr ("GICCR constant") - +" ("+QObject::tr ("A^2s")+")")); - Props.append (new Property ("qp0", "2.0E-14", false, - QObject::tr ("Zero-bias hole charge") - +" ("+QObject::tr ("Coul")+")")); - Props.append (new Property ("ich", "0.0", false, - QObject::tr ("High-current correction for 2D and 3D effects") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("hfe", "1.0", false, - QObject::tr ("Emitter minority charge weighting factor in HBTs"))); - Props.append (new Property ("hfc", "1.0", false, - QObject::tr ("Collector minority charge weighting factor in HBTs"))); - Props.append (new Property ("hjei", "1.0", false, - QObject::tr ("B-E depletion charge weighting factor in HBTs"))); - Props.append (new Property ("hjci", "1.0", false, - QObject::tr ("B-C depletion charge weighting factor in HBTs"))); - Props.append (new Property ("ibeis", "1.0E-18", false, - QObject::tr ("Internal B-E saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mbei", "1.0", false, - QObject::tr ("Internal B-E current ideality factor"))); - Props.append (new Property ("ireis", "0.0", false, - QObject::tr ("Internal B-E recombination saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mrei", "2.0", false, - QObject::tr ("Internal B-E recombination current ideality factor"))); - Props.append (new Property ("ibeps", "0.0", false, - QObject::tr ("Peripheral B-E saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mbep", "1.0", false, - QObject::tr ("Peripheral B-E current ideality factor"))); - Props.append (new Property ("ireps", "0.0", false, - QObject::tr ("Peripheral B-E recombination saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mrep", "2.0", false, - QObject::tr ("Peripheral B-E recombination current ideality factor"))); - Props.append (new Property ("mcf", "1.0", false, - QObject::tr ("Non-ideality factor for III-V HBTs"))); - Props.append (new Property ("tbhrec", "0.0", false, - QObject::tr ("Base current recombination time constant at B-C barrier for high forward injection") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("ibcis", "1.0E-16", false, - QObject::tr ("Internal B-C saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mbci", "1.0", false, - QObject::tr ("Internal B-C current ideality factor"))); - Props.append (new Property ("ibcxs", "0.0", false, - QObject::tr ("External B-C saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mbcx", "1.0", false, - QObject::tr ("External B-C current ideality factor"))); - Props.append (new Property ("ibets", "0.0", false, - QObject::tr ("B-E tunneling saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("abet", "40", false, - QObject::tr ("Exponent factor for tunneling current"))); - Props.append (new Property ("tunode", "1", false, - QObject::tr ("Specifies the base node connection for the tunneling current"))); - Props.append (new Property ("favl", "0.0", false, - QObject::tr ("Avalanche current factor") - +" ("+QObject::tr ("1/V")+")")); - Props.append (new Property ("qavl", "0.0", false, - QObject::tr ("Exponent factor for avalanche current") - +" ("+QObject::tr ("Coul")+")")); - Props.append (new Property ("alfav", "0.0", false, - QObject::tr ("Relative TC for FAVL") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("alqav", "0.0", false, - QObject::tr ("Relative TC for QAVL") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("rbi0", "0.0", false, - QObject::tr ("Zero bias internal base resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("rbx", "0.0", false, - QObject::tr ("External base series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("fgeo", "0.6557", false, - QObject::tr ("Factor for geometry dependence of emitter current crowding"))); - Props.append (new Property ("fdqr0", "0.0", false, - QObject::tr ("Correction factor for modulation by B-E and B-C space charge layer"))); - Props.append (new Property ("fcrbi", "0.0", false, - QObject::tr ("Ratio of HF shunt to total internal capacitance (lateral NQS effect)"))); - Props.append (new Property ("fqi", "1.0", false, - QObject::tr ("Ration of internal to total minority charge"))); - Props.append (new Property ("re", "0.0", false, - QObject::tr ("Emitter series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("rcx", "0.0", false, - QObject::tr ("External collector series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("itss", "0.0", false, - QObject::tr ("Substrate transistor transfer saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("msf", "1.0", false, - QObject::tr ("Forward ideality factor of substrate transfer current"))); - Props.append (new Property ("iscs", "0.0", false, - QObject::tr ("C-S diode saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("msc", "1.0", false, - QObject::tr ("Ideality factor of C-S diode current"))); - Props.append (new Property ("tsf", "0.0", false, - QObject::tr ("Transit time for forward operation of substrate transistor") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("rsu", "0.0", false, - QObject::tr ("Substrate series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("csu", "0.0", false, - QObject::tr ("Substrate shunt capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("cjei0", "1.0E-20", false, - QObject::tr ("Internal B-E zero-bias depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vdei", "0.9", false, - QObject::tr ("Internal B-E built-in potential") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zei", "0.5", false, - QObject::tr ("Internal B-E grading coefficient"))); - Props.append (new Property ("ajei", "2.5", false, - QObject::tr ("Ratio of maximum to zero-bias value of internal B-E capacitance"))); - Props.append (new Property ("cjep0", "1.0E-20", false, - QObject::tr ("Peripheral B-E zero-bias depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vdep", "0.9", false, - QObject::tr ("Peripheral B-E built-in potential") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zep", "0.5", false, - QObject::tr ("Peripheral B-E grading coefficient"))); - Props.append (new Property ("ajep", "2.5", false, - QObject::tr ("Ratio of maximum to zero-bias value of peripheral B-E capacitance"))); - Props.append (new Property ("cjci0", "1.0E-20", false, - QObject::tr ("Internal B-C zero-bias depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vdci", "0.7", false, - QObject::tr ("Internal B-C built-in potential") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zci", "0.4", false, - QObject::tr ("Internal B-C grading coefficient"))); - Props.append (new Property ("vptci", "100", false, - QObject::tr ("Internal B-C punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("cjcx0", "1.0E-20", false, - QObject::tr ("External B-C zero-bias depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vdcx", "0.7", false, - QObject::tr ("External B-C built-in potential") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zcx", "0.4", false, - QObject::tr ("External B-C grading coefficient"))); - Props.append (new Property ("vptcx", "100", false, - QObject::tr ("External B-C punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("fbcpar", "0.0", false, - QObject::tr ("Partitioning factor of parasitic B-C cap"))); - Props.append (new Property ("fbepar", "1.0", false, - QObject::tr ("Partitioning factor of parasitic B-E cap"))); - Props.append (new Property ("cjs0", "0.0", false, - QObject::tr ("C-S zero-bias depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vds", "0.6", false, - QObject::tr ("C-S built-in potential") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zs", "0.5", false, - QObject::tr ("C-S grading coefficient"))); - Props.append (new Property ("vpts", "100", false, - QObject::tr ("C-S punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("t0", "0.0", false, - QObject::tr ("Low current forward transit time at VBC=0V") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("dt0h", "0.0", false, - QObject::tr ("Time constant for base and B-C space charge layer width modulation") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("tbvl", "0.0", false, - QObject::tr ("Time constant for modelling carrier jam at low VCE") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("tef0", "0.0", false, - QObject::tr ("Neutral emitter storage time") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("gtfe", "1.0", false, - QObject::tr ("Exponent factor for current dependence of neutral emitter storage time"))); - Props.append (new Property ("thcs", "0.0", false, - QObject::tr ("Saturation time constant at high current densities") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("ahc", "0.1", false, - QObject::tr ("Smoothing factor for current dependence of base and collector transit time"))); - Props.append (new Property ("fthc", "0.0", false, - QObject::tr ("Partitioning factor for base and collector portion"))); - Props.append (new Property ("rci0", "150", false, - QObject::tr ("Internal collector resistance at low electric field") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("vlim", "0.5", false, - QObject::tr ("Voltage separating ohmic and saturation velocity regime") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vces", "0.1", false, - QObject::tr ("Internal C-E saturation voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vpt", "0.0", false, - QObject::tr ("Collector punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("tr", "0.0", false, - QObject::tr ("Storage time for inverse operation") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("cbepar", "0.0", false, - QObject::tr ("Total parasitic B-E capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("cbcpar", "0.0", false, - QObject::tr ("Total parasitic B-C capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("alqf", "0.0", false, - QObject::tr ("Factor for additional delay time of minority charge"))); - Props.append (new Property ("alit", "0.0", false, - QObject::tr ("Factor for additional delay time of transfer current"))); - Props.append (new Property ("flnqs", "0", false, - QObject::tr ("Flag for turning on and off of vertical NQS effect"))); - Props.append (new Property ("kf", "0.0", false, - QObject::tr ("Flicker noise coefficient"))); - Props.append (new Property ("af", "2.0", false, - QObject::tr ("Flicker noise exponent factor"))); - Props.append (new Property ("cfbe", "-1", false, - QObject::tr ("Flag for determining where to tag the flicker noise source"))); - Props.append (new Property ("latb", "0.0", false, - QObject::tr ("Scaling factor for collector minority charge in direction of emitter width"))); - Props.append (new Property ("latl", "0.0", false, - QObject::tr ("Scaling factor for collector minority charge in direction of emitter length"))); - Props.append (new Property ("vgb", "1.17", false, - QObject::tr ("Bandgap voltage extrapolated to 0 K") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("alt0", "0.0", false, - QObject::tr ("First order relative TC of parameter T0") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("kt0", "0.0", false, - QObject::tr ("Second order relative TC of parameter T0"))); - Props.append (new Property ("zetaci", "0.0", false, - QObject::tr ("Temperature exponent for RCI0"))); - Props.append (new Property ("alvs", "0.0", false, - QObject::tr ("Relative TC of saturation drift velocity") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("alces", "0.0", false, - QObject::tr ("Relative TC of VCES") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("zetarbi", "0.0", false, - QObject::tr ("Temperature exponent of internal base resistance"))); - Props.append (new Property ("zetarbx", "0.0", false, - QObject::tr ("Temperature exponent of external base resistance"))); - Props.append (new Property ("zetarcx", "0.0", false, - QObject::tr ("Temperature exponent of external collector resistance"))); - Props.append (new Property ("zetare", "0.0", false, - QObject::tr ("Temperature exponent of emitter resistance"))); - Props.append (new Property ("zetacx", "1.0", false, - QObject::tr ("Temperature exponent of mobility in substrate transistor transit time"))); - Props.append (new Property ("vge", "1.17", false, - QObject::tr ("Effective emitter bandgap voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vgc", "1.17", false, - QObject::tr ("Effective collector bandgap voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vgs", "1.17", false, - QObject::tr ("Effective substrate bandgap voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("f1vg", "-1.02377e-4", false, - QObject::tr ("Coefficient K1 in T-dependent band-gap equation"))); - Props.append (new Property ("f2vg", "4.3215e-4", false, - QObject::tr ("Coefficient K2 in T-dependent band-gap equation"))); - Props.append (new Property ("zetact", "3.0", false, - QObject::tr ("Exponent coefficient in transfer current temperature dependence"))); - Props.append (new Property ("zetabet", "3.5", false, - QObject::tr ("Exponent coefficient in B-E junction current temperature dependence"))); - Props.append (new Property ("alb", "0.0", false, - QObject::tr ("Relative TC of forward current gain for V2.1 model") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("flsh", "0", false, - QObject::tr ("Flag for turning on and off self-heating effect"))); - Props.append (new Property ("rth", "0.0", false, - QObject::tr ("Thermal resistance") - +" ("+QObject::tr ("K/W")+")")); - Props.append (new Property ("cth", "0.0", false, - QObject::tr ("Thermal capacitance") - +" ("+QObject::tr ("J/W")+")")); - Props.append (new Property ("flcomp", "0.0", false, - QObject::tr ("Flag for compatibility with v2.1 model (0=v2.1)"))); - Props.append (new Property ("tnom", "27.0", false, - QObject::tr ("Temperature at which parameters are specified") - +" ("+QObject::tr ("C")+")")); - Props.append (new Property ("dt", "0.0", false, - QObject::tr ("Temperature change w.r.t. chip temperature for particular transistor") - +" ("+QObject::tr ("K")+")")); - Props.append (new Property ("Temp", "27", false, - QObject::tr ("simulation temperature"))); - - createSymbol (); - tx = x2 + 4; - ty = y1 + 4; - Model = "hic2_full"; - Name = "T"; -} - -Component * hic2_full::newOne() -{ - hic2_full * p = new hic2_full(); - p->Props.getFirst()->Value = Props.getFirst()->Value; - p->recreate(0); - return p; -} - -Element * hic2_full::info(QString& Name, char * &BitmapFile, bool getNewOne) -{ - Name = QObject::tr("HICUM L2 v2.22"); - BitmapFile = (char *) "npnsub_therm"; - - if(getNewOne) return new hic2_full(); - return 0; -} - -void hic2_full::createSymbol() -{ - // normal bipolar - Lines.append(new Line(-10,-15,-10, 15,QPen(Qt::darkBlue,3))); - Lines.append(new Line(-30, 0,-10, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, -5, 0,-15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0,-15, 0,-30,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, 5, 0, 15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 15, 0, 30,QPen(Qt::darkBlue,2))); - - // substrate node - Lines.append(new Line( 9, 0, 30, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 9, -7, 9, 7,QPen(Qt::darkBlue,3))); - - // thermal node - Lines.append(new Line(-30, 20,-20, 20,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-20, 17,-20, 23,QPen(Qt::darkBlue,2))); - - // arrow - Lines.append(new Line( -6, 15, 0, 15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 9, 0, 15,QPen(Qt::darkBlue,2))); - - // H - Lines.append(new Line(-30,-30,-30,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-30,-27,-26,-27,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-26,-30,-26,-24,QPen(Qt::darkBlue,1))); - // I - Lines.append(new Line(-24,-30,-24,-24,QPen(Qt::darkBlue,1))); - // C - Lines.append(new Line(-22,-30,-22,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-22,-30,-19,-30,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-22,-24,-19,-24,QPen(Qt::darkBlue,1))); - // U - Lines.append(new Line(-17,-30,-17,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-14,-30,-14,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-17,-24,-14,-24,QPen(Qt::darkBlue,1))); - // M - Lines.append(new Line(-12,-30,-12,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line( -8,-30, -8,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-12,-30,-10,-28,QPen(Qt::darkBlue,1))); - Lines.append(new Line( -8,-30,-10,-28,QPen(Qt::darkBlue,1))); - - // terminal definitions - Ports.append(new Port( 0,-30)); // collector - Ports.append(new Port(-30, 0)); // base - Ports.append(new Port( 0, 30)); // emitter - Ports.append(new Port( 30, 0)); // substrate - Ports.append(new Port(-30, 20)); // thermal node - - // relative boundings - x1 = -30; y1 = -30; - x2 = 30; y2 = 30; -} diff --git a/qucs/qucs/components/hic2_full.h b/qucs/qucs/components/hic2_full.h deleted file mode 100644 index c547ebfc60..0000000000 --- a/qucs/qucs/components/hic2_full.h +++ /dev/null @@ -1,27 +0,0 @@ -/* - * hic2_full.h - device definitions for hic2_full module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ - -#ifndef hic2_full_H -#define hic2_full_H - -#include "component.h" - -class hic2_full : public Component -{ - public: - hic2_full(); - ~hic2_full() { }; - Component* newOne(); - static Element* info(QString&, char* &, bool getNewOne=false); - protected: - void createSymbol(); -}; - -#endif /* hic2_full_H */ diff --git a/qucs/qucs/components/hicumL0V1p2.cpp b/qucs/qucs/components/hicumL0V1p2.cpp deleted file mode 100644 index 5737212b37..0000000000 --- a/qucs/qucs/components/hicumL0V1p2.cpp +++ /dev/null @@ -1,382 +0,0 @@ -/* - * hicumL0V1p2.cpp - device implementations for hicumL0V1p2 module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ -#include "node.h" -#include "hicumL0V1p2.h" - -hicumL0V1p2::hicumL0V1p2() -{ - Description = QObject::tr ("HICUM Level 0 v1.2 verilog device"); - - Props.append (new Property ("Type", "npn", true, - QObject::tr ("polarity") + " [npn, pnp]")); - Props.append (new Property ("is", "1.0e-16", false, - QObject::tr ("(Modified) saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mcf", "1.00", false, - QObject::tr ("Non-ideality coefficient of forward collector current"))); - Props.append (new Property ("mcr", "1.00", false, - QObject::tr ("Non-ideality coefficient of reverse collector current"))); - Props.append (new Property ("vef", "1.0e6", false, - QObject::tr ("forward Early voltage (normalization volt.)") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("ver", "1.0e6", false, - QObject::tr ("reverse Early voltage (normalization volt.)") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("iqf", "1.0e6", false, - QObject::tr ("forward d.c. high-injection roll-off current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("fiqf", "0", false, - QObject::tr ("flag for turning on base related critical current"))); - Props.append (new Property ("iqr", "1.0e6", false, - QObject::tr ("inverse d.c. high-injection roll-off current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("iqfh", "1.0e6", false, - QObject::tr ("high-injection correction current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("tfh", "0.0", false, - QObject::tr ("high-injection correction factor"))); - Props.append (new Property ("ahq", "0", false, - QObject::tr ("Smoothing factor for the d.c. injection width"))); - Props.append (new Property ("ibes", "1e-18", false, - QObject::tr ("BE saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mbe", "1.0", false, - QObject::tr ("BE non-ideality factor"))); - Props.append (new Property ("ires", "0.0", false, - QObject::tr ("BE recombination saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mre", "2.0", false, - QObject::tr ("BE recombination non-ideality factor"))); - Props.append (new Property ("ibcs", "0.0", false, - QObject::tr ("BC saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mbc", "1.0", false, - QObject::tr ("BC non-ideality factor"))); - Props.append (new Property ("cje0", "1.0e-20", false, - QObject::tr ("Zero-bias BE depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vde", "0.9", false, - QObject::tr ("BE built-in voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("ze", "0.5", false, - QObject::tr ("BE exponent factor"))); - Props.append (new Property ("aje", "2.5", false, - QObject::tr ("Ratio of maximum to zero-bias value"))); - Props.append (new Property ("vdedc", "0.9", false, - QObject::tr ("BE charge built-in voltage for d.c. transfer current") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zedc", "0.5", false, - QObject::tr ("charge BE exponent factor for d.c. transfer current"))); - Props.append (new Property ("ajedc", "2.5", false, - QObject::tr ("BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current"))); - Props.append (new Property ("t0", "0.0", false, - QObject::tr ("low current transit time at Vbici=0") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("dt0h", "0.0", false, - QObject::tr ("Base width modulation contribution") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("tbvl", "0.0", false, - QObject::tr ("SCR width modulation contribution") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("tef0", "0.0", false, - QObject::tr ("Storage time in neutral emitter") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("gte", "1.0", false, - QObject::tr ("Exponent factor for emitter transit time"))); - Props.append (new Property ("thcs", "0.0", false, - QObject::tr ("Saturation time at high current densities") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("ahc", "0.1", false, - QObject::tr ("Smoothing factor for current dependence"))); - Props.append (new Property ("tr", "0.0", false, - QObject::tr ("Storage time at inverse operation") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("rci0", "150", false, - QObject::tr ("Low-field collector resistance under emitter") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("vlim", "0.5", false, - QObject::tr ("Voltage dividing ohmic and satur.region") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vpt", "100", false, - QObject::tr ("Punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vces", "0.1", false, - QObject::tr ("Saturation voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("cjci0", "1.0e-20", false, - QObject::tr ("Total zero-bias BC depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vdci", "0.7", false, - QObject::tr ("BC built-in voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zci", "0.333", false, - QObject::tr ("BC exponent factor"))); - Props.append (new Property ("vptci", "100", false, - QObject::tr ("Punch-through voltage of BC junction") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("cjcx0", "1.0e-20", false, - QObject::tr ("Zero-bias external BC depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vdcx", "0.7", false, - QObject::tr ("External BC built-in voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zcx", "0.333", false, - QObject::tr ("External BC exponent factor"))); - Props.append (new Property ("vptcx", "100", false, - QObject::tr ("Punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("fbc", "1.0", false, - QObject::tr ("Split factor = Cjci0/Cjc0"))); - Props.append (new Property ("rbi0", "0.0", false, - QObject::tr ("Internal base resistance at zero-bias") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("vr0e", "2.5", false, - QObject::tr ("forward Early voltage (normalization volt.)") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vr0c", "1.0e6", false, - QObject::tr ("forward Early voltage (normalization volt.)") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("fgeo", "0.656", false, - QObject::tr ("Geometry factor"))); - Props.append (new Property ("rbx", "0.0", false, - QObject::tr ("External base series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("rcx", "0.0", false, - QObject::tr ("Emitter series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("re", "0.0", false, - QObject::tr ("External collector series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("itss", "0.0", false, - QObject::tr ("Substrate transistor transfer saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("msf", "1.0", false, - QObject::tr ("Substrate transistor transfer current non-ideality factor"))); - Props.append (new Property ("iscs", "0.0", false, - QObject::tr ("SC saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("msc", "1.0", false, - QObject::tr ("SC non-ideality factor"))); - Props.append (new Property ("cjs0", "1.0e-20", false, - QObject::tr ("Zero-bias SC depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vds", "0.3", false, - QObject::tr ("SC built-in voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zs", "0.3", false, - QObject::tr ("External SC exponent factor"))); - Props.append (new Property ("vpts", "100", false, - QObject::tr ("SC punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("cbcpar", "0.0", false, - QObject::tr ("Collector-base isolation (overlap) capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("cbepar", "0.0", false, - QObject::tr ("Emitter-base oxide capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("eavl", "0.0", false, - QObject::tr ("Exponent factor"))); - Props.append (new Property ("kavl", "0.0", false, - QObject::tr ("Prefactor"))); - Props.append (new Property ("kf", "0.0", false, - QObject::tr ("flicker noise coefficient") - +" ("+QObject::tr ("M^(1-AF)")+")")); - Props.append (new Property ("af", "2.0", false, - QObject::tr ("flicker noise exponent factor"))); - Props.append (new Property ("vgb", "1.2", false, - QObject::tr ("Bandgap-voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vge", "1.17", false, - QObject::tr ("Effective emitter bandgap-voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vgc", "1.17", false, - QObject::tr ("Effective collector bandgap-voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vgs", "1.17", false, - QObject::tr ("Effective substrate bandgap-voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("f1vg", "-1.02377e-4", false, - QObject::tr ("Coefficient K1 in T-dependent bandgap equation") - +" ("+QObject::tr ("V/K")+")")); - Props.append (new Property ("f2vg", "4.3215e-4", false, - QObject::tr ("Coefficient K2 in T-dependent bandgap equation") - +" ("+QObject::tr ("V/K")+")")); - Props.append (new Property ("alt0", "0.0", false, - QObject::tr ("Frist-order TC of tf0") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("kt0", "0.0", false, - QObject::tr ("Second-order TC of tf0") - +" ("+QObject::tr ("1/K^2")+")")); - Props.append (new Property ("zetact", "3.0", false, - QObject::tr ("Exponent coefficient in transfer current temperature dependence"))); - Props.append (new Property ("zetabet", "3.5", false, - QObject::tr ("Exponent coefficient in BE junction current temperature dependence"))); - Props.append (new Property ("zetaci", "0.0", false, - QObject::tr ("TC of epi-collector diffusivity"))); - Props.append (new Property ("alvs", "0.0", false, - QObject::tr ("Relative TC of satur.drift velocity") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("alces", "0.0", false, - QObject::tr ("Relative TC of vces") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("zetarbi", "0.0", false, - QObject::tr ("TC of internal base resistance"))); - Props.append (new Property ("zetarbx", "0.0", false, - QObject::tr ("TC of external base resistance"))); - Props.append (new Property ("zetarcx", "0.0", false, - QObject::tr ("TC of external collector resistance"))); - Props.append (new Property ("zetare", "0.0", false, - QObject::tr ("TC of emitter resistances"))); - Props.append (new Property ("zetaiqf", "0.0", false, - QObject::tr ("TC of iqf"))); - Props.append (new Property ("alkav", "0.0", false, - QObject::tr ("TC of avalanche prefactor") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("aleav", "0.0", false, - QObject::tr ("TC of avalanche exponential factor") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("zetarth", "0.0", false, - QObject::tr ("Exponent factor for temperature dependent thermal resistance"))); - Props.append (new Property ("flsh", "0", false, - QObject::tr ("Flag for self-heating calculation"))); - Props.append (new Property ("rth", "0.0", false, - QObject::tr ("Thermal resistance") - +" ("+QObject::tr ("K/W")+")")); - Props.append (new Property ("cth", "0.0", false, - QObject::tr ("Thermal capacitance") - +" ("+QObject::tr ("Ws/K")+")")); - Props.append (new Property ("tnom", "27", false, - QObject::tr ("Temperature for which parameters are valid") - +" ("+QObject::tr ("C")+")")); - Props.append (new Property ("dt", "0.0", false, - QObject::tr ("Temperature change for particular transistor") - +" ("+QObject::tr ("K")+")")); - Props.append (new Property ("Temp", "27", false, - QObject::tr ("simulation temperature"))); - - createSymbol (); - tx = x2 + 4; - ty = y1 + 4; - Model = "hicumL0V1p2"; - Name = "T"; -} - -Component * hicumL0V1p2::newOne() -{ - hicumL0V1p2 * p = new hicumL0V1p2(); - p->Props.getFirst()->Value = Props.getFirst()->Value; - p->recreate(0); - return p; -} - -Element * hicumL0V1p2::info(QString& Name, char * &BitmapFile, bool getNewOne) -{ - Name = QObject::tr("npn HICUM L0 v1.2"); - BitmapFile = (char *) "npnsub_therm"; - - if(getNewOne) return new hicumL0V1p2(); - return 0; -} - -Element * hicumL0V1p2::info_pnp(QString& Name, char * &BitmapFile, bool getNewOne) -{ - Name = QObject::tr("pnp HICUM L0 v1.2"); - BitmapFile = (char *) "pnpsub_therm"; - - if(getNewOne) - { - hicumL0V1p2* p = new hicumL0V1p2(); - p->Props.getFirst()->Value = "pnp"; - p->recreate(0); - return p; - } - return 0; -} - -void hicumL0V1p2::createSymbol() -{ - // normal bipolar - Lines.append(new Line(-10,-15,-10, 15,QPen(Qt::darkBlue,3))); - Lines.append(new Line(-30, 0,-10, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, -5, 0,-15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0,-15, 0,-30,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, 5, 0, 15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 15, 0, 30,QPen(Qt::darkBlue,2))); - - // substrate node - Lines.append(new Line( 9, 0, 30, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 9, -7, 9, 7,QPen(Qt::darkBlue,3))); - - // thermal node - Lines.append(new Line(-30, 20,-20, 20,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-20, 17,-20, 23,QPen(Qt::darkBlue,2))); - - // arrow - if(Props.getFirst()->Value == "npn") { - Lines.append(new Line( -6, 15, 0, 15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 9, 0, 15,QPen(Qt::darkBlue,2))); - } else { - Lines.append(new Line( -5, 10, -5, 16,QPen(Qt::darkBlue,2))); - Lines.append(new Line( -5, 10, 1, 10,QPen(Qt::darkBlue,2))); - } - - // H - Lines.append(new Line(-30,-30,-30,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-30,-27,-26,-27,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-26,-30,-26,-24,QPen(Qt::darkBlue,1))); - // I - Lines.append(new Line(-24,-30,-24,-24,QPen(Qt::darkBlue,1))); - // C - Lines.append(new Line(-22,-30,-22,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-22,-30,-19,-30,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-22,-24,-19,-24,QPen(Qt::darkBlue,1))); - // U - Lines.append(new Line(-17,-30,-17,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-14,-30,-14,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-17,-24,-14,-24,QPen(Qt::darkBlue,1))); - // M - Lines.append(new Line(-12,-30,-12,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line( -8,-30, -8,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-12,-30,-10,-28,QPen(Qt::darkBlue,1))); - Lines.append(new Line( -8,-30,-10,-28,QPen(Qt::darkBlue,1))); - - // terminal definitions - Ports.append(new Port( 0,-30)); // collector - Ports.append(new Port(-30, 0)); // base - Ports.append(new Port( 0, 30)); // emitter - Ports.append(new Port( 30, 0)); // substrate - Ports.append(new Port(-30, 20)); // thermal node - - // relative boundings - x1 = -30; y1 = -30; - x2 = 30; y2 = 30; -} - -QString hicumL0V1p2::netlist() -{ - QString s = "hicumL0V1p2:"+Name; - - // output all node names - foreach(Port *p1, Ports) - s += " "+p1->Connection->Name; // node names - - // output type npn/pnp property - Property *p2 = Props.first(); - if(p2->Value == "npn") - s += " npn=\"1\""; - else - s += " pnp=\"1\""; - - // output all remaining properties - for(p2 = Props.next(); p2 != 0; p2 = Props.next()) - s += " "+p2->Name+"=\""+p2->Value+"\""; - - return s + '\n'; -} diff --git a/qucs/qucs/components/hicumL0V1p2.h b/qucs/qucs/components/hicumL0V1p2.h deleted file mode 100644 index 03eda68261..0000000000 --- a/qucs/qucs/components/hicumL0V1p2.h +++ /dev/null @@ -1,29 +0,0 @@ -/* - * hicumL0V1p2.h - device definitions for hicumL0V1p2 module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ - -#ifndef hicumL0V1p2_H -#define hicumL0V1p2_H - -#include "component.h" - -class hicumL0V1p2 : public MultiViewComponent -{ - public: - hicumL0V1p2(); - ~hicumL0V1p2() { }; - Component* newOne(); - static Element* info(QString&, char* &, bool getNewOne=false); - static Element* info_pnp(QString&, char* &, bool getNewOne=false); - protected: - void createSymbol(); - QString netlist(); -}; - -#endif /* hicumL0V1p2_H */ diff --git a/qucs/qucs/components/hicumL0V1p2g.cpp b/qucs/qucs/components/hicumL0V1p2g.cpp deleted file mode 100644 index afa008d30b..0000000000 --- a/qucs/qucs/components/hicumL0V1p2g.cpp +++ /dev/null @@ -1,393 +0,0 @@ -/* - * hicumL0V1p2g.cpp - device implementations for hicumL0V1p2g module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ -#include "node.h" -#include "hicumL0V1p2g.h" - -hicumL0V1p2g::hicumL0V1p2g() -{ - Description = QObject::tr ("HICUM Level 0 v1.2g verilog device"); - - Props.append (new Property ("Type", "npn", true, - QObject::tr ("polarity") + " [npn, pnp]")); - Props.append (new Property ("is", "1.0e-16", false, - QObject::tr ("(Modified) saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mcf", "1.00", false, - QObject::tr ("Non-ideality coefficient of forward collector current"))); - Props.append (new Property ("mcr", "1.00", false, - QObject::tr ("Non-ideality coefficient of reverse collector current"))); - Props.append (new Property ("vef", "1.0e6", false, - QObject::tr ("forward Early voltage (normalization volt.)") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("ver", "1.0e6", false, - QObject::tr ("reverse Early voltage (normalization volt.)") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("iqf", "1.0e6", false, - QObject::tr ("forward d.c. high-injection roll-off current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("fiqf", "0", false, - QObject::tr ("flag for turning on base related critical current"))); - Props.append (new Property ("iqr", "1.0e6", false, - QObject::tr ("inverse d.c. high-injection roll-off current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("iqfh", "1.0e6", false, - QObject::tr ("high-injection correction current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("iqfe", "0.0", false, - QObject::tr ("high-injection roll-off current"))); - Props.append (new Property ("ahq", "0.0", false, - QObject::tr ("Smoothing factor for the d.c. injection width"))); - Props.append (new Property ("ibes", "1e-18", false, - QObject::tr ("BE saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mbe", "1.0", false, - QObject::tr ("BE non-ideality factor"))); - Props.append (new Property ("ires", "0.0", false, - QObject::tr ("BE recombination saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mre", "2.0", false, - QObject::tr ("BE recombination non-ideality factor"))); - Props.append (new Property ("ibcs", "0.0", false, - QObject::tr ("BC saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mbc", "1.0", false, - QObject::tr ("BC non-ideality factor"))); - Props.append (new Property ("cje0", "1.0e-20", false, - QObject::tr ("Zero-bias BE depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vde", "0.9", false, - QObject::tr ("BE built-in voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("ze", "0.5", false, - QObject::tr ("BE exponent factor"))); - Props.append (new Property ("aje", "2.5", false, - QObject::tr ("Ratio of maximum to zero-bias value"))); - Props.append (new Property ("vdedc", "0.9", false, - QObject::tr ("BE charge built-in voltage for d.c. transfer current") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zedc", "0.5", false, - QObject::tr ("charge BE exponent factor for d.c. transfer current"))); - Props.append (new Property ("ajedc", "2.5", false, - QObject::tr ("BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current"))); - Props.append (new Property ("t0", "0.0", false, - QObject::tr ("low current transit time at Vbici=0") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("dt0h", "0.0", false, - QObject::tr ("Base width modulation contribution") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("tbvl", "0.0", false, - QObject::tr ("SCR width modulation contribution") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("tef0", "0.0", false, - QObject::tr ("Storage time in neutral emitter") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("gte", "1.0", false, - QObject::tr ("Exponent factor for emitter transit time"))); - Props.append (new Property ("thcs", "0.0", false, - QObject::tr ("Saturation time at high current densities") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("ahc", "0.1", false, - QObject::tr ("Smoothing factor for current dependence"))); - Props.append (new Property ("tr", "0.0", false, - QObject::tr ("Storage time at inverse operation") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("rci0", "150", false, - QObject::tr ("Low-field collector resistance under emitter") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("vlim", "0.5", false, - QObject::tr ("Voltage dividing ohmic and satur.region") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vpt", "100.0", false, - QObject::tr ("Punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vces", "0.1", false, - QObject::tr ("Saturation voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("cjci0", "1.0e-20", false, - QObject::tr ("Total zero-bias BC depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vdci", "0.7", false, - QObject::tr ("BC built-in voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zci", "0.333", false, - QObject::tr ("BC exponent factor"))); - Props.append (new Property ("vptci", "100.0", false, - QObject::tr ("Punch-through voltage of BC junction") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("cjcx0", "1.0e-20", false, - QObject::tr ("Zero-bias external BC depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vdcx", "0.7", false, - QObject::tr ("External BC built-in voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zcx", "0.333", false, - QObject::tr ("External BC exponent factor"))); - Props.append (new Property ("vptcx", "100.0", false, - QObject::tr ("Punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("fbc", "1.0", false, - QObject::tr ("Split factor = Cjci0/Cjc0"))); - Props.append (new Property ("rbi0", "0.0", false, - QObject::tr ("Internal base resistance at zero-bias") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("vr0e", "2.5", false, - QObject::tr ("forward Early voltage (normalization volt.)") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vr0c", "1.0e6", false, - QObject::tr ("forward Early voltage (normalization volt.)") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("fgeo", "0.656", false, - QObject::tr ("Geometry factor"))); - Props.append (new Property ("rbx", "0.0", false, - QObject::tr ("External base series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("rcx", "0.0", false, - QObject::tr ("Emitter series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("re", "0.0", false, - QObject::tr ("External collector series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("itss", "0.0", false, - QObject::tr ("Substrate transistor transfer saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("msf", "1.0", false, - QObject::tr ("Substrate transistor transfer current non-ideality factor"))); - Props.append (new Property ("iscs", "0.0", false, - QObject::tr ("SC saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("msc", "1.0", false, - QObject::tr ("SC non-ideality factor"))); - Props.append (new Property ("cjs0", "1.0e-20", false, - QObject::tr ("Zero-bias SC depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vds", "0.3", false, - QObject::tr ("SC built-in voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zs", "0.3", false, - QObject::tr ("External SC exponent factor"))); - Props.append (new Property ("vpts", "100.0", false, - QObject::tr ("SC punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("cbcpar", "0.0", false, - QObject::tr ("Collector-base isolation (overlap) capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("cbepar", "0.0", false, - QObject::tr ("Emitter-base oxide capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("eavl", "0.0", false, - QObject::tr ("Exponent factor"))); - Props.append (new Property ("kavl", "0.0", false, - QObject::tr ("Prefactor"))); - Props.append (new Property ("kf", "0.0", false, - QObject::tr ("flicker noise coefficient") - +" ("+QObject::tr ("M^(1-AF)")+")")); - Props.append (new Property ("af", "2.0", false, - QObject::tr ("flicker noise exponent factor"))); - Props.append (new Property ("vgb", "1.2", false, - QObject::tr ("Bandgap-voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vge", "1.17", false, - QObject::tr ("Effective emitter bandgap-voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vgc", "1.17", false, - QObject::tr ("Effective collector bandgap-voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vgs", "1.17", false, - QObject::tr ("Effective substrate bandgap-voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("f1vg", "-1.02377e-4", false, - QObject::tr ("Coefficient K1 in T-dependent bandgap equation") - +" ("+QObject::tr ("V/K")+")")); - Props.append (new Property ("f2vg", "4.3215e-4", false, - QObject::tr ("Coefficient K2 in T-dependent bandgap equation") - +" ("+QObject::tr ("V/K")+")")); - Props.append (new Property ("alt0", "0.0", false, - QObject::tr ("Frist-order TC of tf0") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("kt0", "0.0", false, - QObject::tr ("Second-order TC of tf0") - +" ("+QObject::tr ("1/K^2")+")")); - Props.append (new Property ("zetact", "3.0", false, - QObject::tr ("Exponent coefficient in transfer current temperature dependence"))); - Props.append (new Property ("zetabet", "3.5", false, - QObject::tr ("Exponent coefficient in BE junction current temperature dependence"))); - Props.append (new Property ("zetaci", "0.0", false, - QObject::tr ("TC of epi-collector diffusivity"))); - Props.append (new Property ("alvs", "0.0", false, - QObject::tr ("Relative TC of satur.drift velocity") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("alces", "0.0", false, - QObject::tr ("Relative TC of vces") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("zetarbi", "0.0", false, - QObject::tr ("TC of internal base resistance"))); - Props.append (new Property ("zetarbx", "0.0", false, - QObject::tr ("TC of external base resistance"))); - Props.append (new Property ("zetarcx", "0.0", false, - QObject::tr ("TC of external collector resistance"))); - Props.append (new Property ("zetare", "0.0", false, - QObject::tr ("TC of emitter resistances"))); - Props.append (new Property ("zetaiqf", "0.0", false, - QObject::tr ("TC of iqf (bandgap coefficient of zero bias hole charge)"))); - Props.append (new Property ("alkav", "0.0", false, - QObject::tr ("TC of avalanche prefactor, identical to alfav of Hicum/L2") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("aleav", "0.0", false, - QObject::tr ("TC of avalanche exponential factor, identical to alqav of Hicum/L2") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("flsh", "0", false, - QObject::tr ("Flag for self-heating calculation"))); - Props.append (new Property ("rth", "0.0", false, - QObject::tr ("Thermal resistance") - +" ("+QObject::tr ("K/W")+")")); - Props.append (new Property ("zetarth", "0.0", false, - QObject::tr ("Exponent factor for temperature dependent thermal resistance"))); - Props.append (new Property ("cth", "0.0", false, - QObject::tr ("Thermal capacitance") - +" ("+QObject::tr ("Ws/K")+")")); - Props.append (new Property ("tnom", "27", false, - QObject::tr ("Temperature for which parameters are valid") - +" ("+QObject::tr ("C")+")")); - Props.append (new Property ("dt", "0.0", false, - QObject::tr ("Temperature change for particular transistor") - +" ("+QObject::tr ("K")+")")); - Props.append (new Property ("delte", "0.0", false, - QObject::tr ("Emitter part coefficient of the zero bias hole charge temperature variation"))); - Props.append (new Property ("deltc", "0.0", false, - QObject::tr ("Collector part coefficient of the zero bias hole charge temperature variation"))); - Props.append (new Property ("zetaver", "0.0", false, - QObject::tr ("Bandgap TC parameter of ver"))); - Props.append (new Property ("zetavef", "0.0", false, - QObject::tr ("Bandgap TC parameter of vef"))); - Props.append (new Property ("ibhrec", "0.0", false, - QObject::tr ("Specific recombination current at the BC barrier for high forward injection") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("Temp", "27", false, - QObject::tr ("simulation temperature"))); - - createSymbol (); - tx = x2 + 4; - ty = y1 + 4; - Model = "hicumL0V1p2g"; - Name = "T"; -} - -Component * hicumL0V1p2g::newOne() -{ - hicumL0V1p2g * p = new hicumL0V1p2g(); - p->Props.getFirst()->Value = Props.getFirst()->Value; - p->recreate(0); - return p; -} - -Element * hicumL0V1p2g::info(QString& Name, char * &BitmapFile, bool getNewOne) -{ - Name = QObject::tr("npn HICUM L0 v1.2g"); - BitmapFile = (char *) "npnsub_therm"; - - if(getNewOne) return new hicumL0V1p2g(); - return 0; -} - -Element * hicumL0V1p2g::info_pnp(QString& Name, char * &BitmapFile, bool getNewOne) -{ - Name = QObject::tr("pnp HICUM L0 v1.2g"); - BitmapFile = (char *) "pnpsub_therm"; - - if(getNewOne) - { - hicumL0V1p2g* p = new hicumL0V1p2g(); - p->Props.getFirst()->Value = "pnp"; - p->recreate(0); - return p; - } - return 0; -} - -void hicumL0V1p2g::createSymbol() -{ - // normal bipolar - Lines.append(new Line(-10,-15,-10, 15,QPen(Qt::darkBlue,3))); - Lines.append(new Line(-30, 0,-10, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, -5, 0,-15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0,-15, 0,-30,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, 5, 0, 15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 15, 0, 30,QPen(Qt::darkBlue,2))); - - // substrate node - Lines.append(new Line( 9, 0, 30, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 9, -7, 9, 7,QPen(Qt::darkBlue,3))); - - // thermal node - Lines.append(new Line(-30, 20,-20, 20,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-20, 17,-20, 23,QPen(Qt::darkBlue,2))); - - // arrow - if(Props.getFirst()->Value == "npn") { - Lines.append(new Line( -6, 15, 0, 15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 9, 0, 15,QPen(Qt::darkBlue,2))); - } else { - Lines.append(new Line( -5, 10, -5, 16,QPen(Qt::darkBlue,2))); - Lines.append(new Line( -5, 10, 1, 10,QPen(Qt::darkBlue,2))); - } - - // H - Lines.append(new Line(-30,-30,-30,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-30,-27,-26,-27,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-26,-30,-26,-24,QPen(Qt::darkBlue,1))); - // I - Lines.append(new Line(-24,-30,-24,-24,QPen(Qt::darkBlue,1))); - // C - Lines.append(new Line(-22,-30,-22,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-22,-30,-19,-30,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-22,-24,-19,-24,QPen(Qt::darkBlue,1))); - // U - Lines.append(new Line(-17,-30,-17,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-14,-30,-14,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-17,-24,-14,-24,QPen(Qt::darkBlue,1))); - // M - Lines.append(new Line(-12,-30,-12,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line( -8,-30, -8,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-12,-30,-10,-28,QPen(Qt::darkBlue,1))); - Lines.append(new Line( -8,-30,-10,-28,QPen(Qt::darkBlue,1))); - - // terminal definitions - Ports.append(new Port( 0,-30)); // collector - Ports.append(new Port(-30, 0)); // base - Ports.append(new Port( 0, 30)); // emitter - Ports.append(new Port( 30, 0)); // substrate - Ports.append(new Port(-30, 20)); // thermal node - - // relative boundings - x1 = -30; y1 = -30; - x2 = 30; y2 = 30; -} - -QString hicumL0V1p2g::netlist() -{ - QString s = "hicumL0V1p2g:"+Name; - - // output all node names - foreach(Port *p1, Ports) - s += " "+p1->Connection->Name; // node names - - // output type npn/pnp property - Property *p2 = Props.first(); - if(p2->Value == "npn") - s += " npn=\"1\""; - else - s += " pnp=\"1\""; - - // output all remaining properties - for(p2 = Props.next(); p2 != 0; p2 = Props.next()) - s += " "+p2->Name+"=\""+p2->Value+"\""; - - return s + '\n'; -} diff --git a/qucs/qucs/components/hicumL0V1p2g.h b/qucs/qucs/components/hicumL0V1p2g.h deleted file mode 100644 index e14c2b1e87..0000000000 --- a/qucs/qucs/components/hicumL0V1p2g.h +++ /dev/null @@ -1,29 +0,0 @@ -/* - * hicumL0V1p2g.h - device definitions for hicumL0V1p2g module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ - -#ifndef hicumL0V1p2g_H -#define hicumL0V1p2g_H - -#include "component.h" - -class hicumL0V1p2g : public MultiViewComponent -{ - public: - hicumL0V1p2g(); - ~hicumL0V1p2g() { }; - Component* newOne(); - static Element* info(QString&, char* &, bool getNewOne=false); - static Element* info_pnp(QString&, char* &, bool getNewOne=false); - protected: - void createSymbol(); - QString netlist(); -}; - -#endif /* hicumL0V1p2g_H */ diff --git a/qucs/qucs/components/hicumL0V1p3.cpp b/qucs/qucs/components/hicumL0V1p3.cpp deleted file mode 100644 index c28055cdcc..0000000000 --- a/qucs/qucs/components/hicumL0V1p3.cpp +++ /dev/null @@ -1,400 +0,0 @@ -/* - * hicumL0V1p3.cpp - device implementations for hicumL0V1p3 module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ -#include "node.h" -#include "hicumL0V1p3.h" - -hicumL0V1p3::hicumL0V1p3() -{ - Description = QObject::tr ("HICUM Level 0 v1.3 verilog device"); - - Props.append (new Property ("Type", "npn", true, - QObject::tr ("polarity") + " [npn, pnp]")); - Props.append (new Property ("is", "1.0e-16", false, - QObject::tr ("(Modified) saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("it_mod", "0", false, - QObject::tr ("Flag for using third order solution for transfer current"))); - Props.append (new Property ("mcf", "1.00", false, - QObject::tr ("Non-ideality coefficient of forward collector current"))); - Props.append (new Property ("mcr", "1.00", false, - QObject::tr ("Non-ideality coefficient of reverse collector current"))); - Props.append (new Property ("vef", "1.0e6", false, - QObject::tr ("forward Early voltage (normalization volt.)") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("ver", "1.0e6", false, - QObject::tr ("reverse Early voltage (normalization volt.)") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("aver", "0.0", false, - QObject::tr ("bias dependence for reverse Early voltage"))); - Props.append (new Property ("iqf", "1.0e6", false, - QObject::tr ("forward d.c. high-injection roll-off current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("fiqf", "0", false, - QObject::tr ("flag for turning on base related critical current"))); - Props.append (new Property ("iqr", "1.0e6", false, - QObject::tr ("inverse d.c. high-injection roll-off current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("iqfh", "1.0e6", false, - QObject::tr ("high-injection correction current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("tfh", "0.0", false, - QObject::tr ("high-injection correction factor"))); - Props.append (new Property ("ahq", "0", false, - QObject::tr ("Smoothing factor for the d.c. injection width"))); - Props.append (new Property ("ibes", "1e-18", false, - QObject::tr ("BE saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mbe", "1.0", false, - QObject::tr ("BE non-ideality factor"))); - Props.append (new Property ("ires", "0.0", false, - QObject::tr ("BE recombination saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mre", "2.0", false, - QObject::tr ("BE recombination non-ideality factor"))); - Props.append (new Property ("ibcs", "0.0", false, - QObject::tr ("BC saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mbc", "1.0", false, - QObject::tr ("BC non-ideality factor"))); - Props.append (new Property ("cje0", "1.0e-20", false, - QObject::tr ("Zero-bias BE depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vde", "0.9", false, - QObject::tr ("BE built-in voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("ze", "0.5", false, - QObject::tr ("BE exponent factor"))); - Props.append (new Property ("aje", "2.5", false, - QObject::tr ("Ratio of maximum to zero-bias value"))); - Props.append (new Property ("vdedc", "0.9", false, - QObject::tr ("BE charge built-in voltage for d.c. transfer current") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zedc", "0.5", false, - QObject::tr ("charge BE exponent factor for d.c. transfer current"))); - Props.append (new Property ("ajedc", "2.5", false, - QObject::tr ("BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current"))); - Props.append (new Property ("t0", "0.0", false, - QObject::tr ("low current transit time at Vbici=0") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("dt0h", "0.0", false, - QObject::tr ("Base width modulation contribution") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("tbvl", "0.0", false, - QObject::tr ("SCR width modulation contribution") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("tef0", "0.0", false, - QObject::tr ("Storage time in neutral emitter") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("gte", "1.0", false, - QObject::tr ("Exponent factor for emitter transit time"))); - Props.append (new Property ("thcs", "0.0", false, - QObject::tr ("Saturation time at high current densities") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("ahc", "0.1", false, - QObject::tr ("Smoothing factor for current dependence"))); - Props.append (new Property ("tr", "0.0", false, - QObject::tr ("Storage time at inverse operation") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("rci0", "150", false, - QObject::tr ("Low-field collector resistance under emitter") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("vlim", "0.5", false, - QObject::tr ("Voltage dividing ohmic and satur.region") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vpt", "100", false, - QObject::tr ("Punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vces", "0.1", false, - QObject::tr ("Saturation voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("cjci0", "1.0e-20", false, - QObject::tr ("Total zero-bias BC depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vdci", "0.7", false, - QObject::tr ("BC built-in voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zci", "0.333", false, - QObject::tr ("BC exponent factor"))); - Props.append (new Property ("vptci", "100", false, - QObject::tr ("Punch-through voltage of BC junction") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("cjcx0", "1.0e-20", false, - QObject::tr ("Zero-bias external BC depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vdcx", "0.7", false, - QObject::tr ("External BC built-in voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zcx", "0.333", false, - QObject::tr ("External BC exponent factor"))); - Props.append (new Property ("vptcx", "100", false, - QObject::tr ("Punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("fbc", "1.0", false, - QObject::tr ("Split factor = Cjci0/Cjc0"))); - Props.append (new Property ("rbi0", "0.0", false, - QObject::tr ("Internal base resistance at zero-bias") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("vr0e", "2.5", false, - QObject::tr ("forward Early voltage (normalization volt.)") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vr0c", "1.0e6", false, - QObject::tr ("forward Early voltage (normalization volt.)") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("fgeo", "0.656", false, - QObject::tr ("Geometry factor"))); - Props.append (new Property ("rbx", "0.0", false, - QObject::tr ("External base series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("rcx", "0.0", false, - QObject::tr ("Emitter series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("re", "0.0", false, - QObject::tr ("External collector series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("itss", "0.0", false, - QObject::tr ("Substrate transistor transfer saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("msf", "1.0", false, - QObject::tr ("Substrate transistor transfer current non-ideality factor"))); - Props.append (new Property ("iscs", "0.0", false, - QObject::tr ("SC saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("msc", "1.0", false, - QObject::tr ("SC non-ideality factor"))); - Props.append (new Property ("cjs0", "1.0e-20", false, - QObject::tr ("Zero-bias SC depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vds", "0.3", false, - QObject::tr ("SC built-in voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zs", "0.3", false, - QObject::tr ("External SC exponent factor"))); - Props.append (new Property ("vpts", "100", false, - QObject::tr ("SC punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("cbcpar", "0.0", false, - QObject::tr ("Collector-base isolation (overlap) capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("cbepar", "0.0", false, - QObject::tr ("Emitter-base oxide capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("eavl", "0.0", false, - QObject::tr ("Exponent factor"))); - Props.append (new Property ("kavl", "0.0", false, - QObject::tr ("Prefactor"))); - Props.append (new Property ("kf", "0.0", false, - QObject::tr ("flicker noise coefficient") - +" ("+QObject::tr ("M^(1-AF)")+")")); - Props.append (new Property ("af", "2.0", false, - QObject::tr ("flicker noise exponent factor"))); - Props.append (new Property ("vgb", "1.2", false, - QObject::tr ("Bandgap-voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vge", "1.17", false, - QObject::tr ("Effective emitter bandgap-voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vgc", "1.17", false, - QObject::tr ("Effective collector bandgap-voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vgs", "1.17", false, - QObject::tr ("Effective substrate bandgap-voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("f1vg", "-1.02377e-4", false, - QObject::tr ("Coefficient K1 in T-dependent bandgap equation") - +" ("+QObject::tr ("V/K")+")")); - Props.append (new Property ("f2vg", "4.3215e-4", false, - QObject::tr ("Coefficient K2 in T-dependent bandgap equation") - +" ("+QObject::tr ("V/K")+")")); - Props.append (new Property ("alt0", "0.0", false, - QObject::tr ("Frist-order TC of tf0") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("kt0", "0.0", false, - QObject::tr ("Second-order TC of tf0") - +" ("+QObject::tr ("1/K^2")+")")); - Props.append (new Property ("zetact", "3.0", false, - QObject::tr ("Exponent coefficient in transfer current temperature dependence"))); - Props.append (new Property ("zetabet", "3.5", false, - QObject::tr ("Exponent coefficient in BE junction current temperature dependence"))); - Props.append (new Property ("zetaci", "0.0", false, - QObject::tr ("TC of epi-collector diffusivity"))); - Props.append (new Property ("alvs", "0.0", false, - QObject::tr ("Relative TC of satur.drift velocity") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("alces", "0.0", false, - QObject::tr ("Relative TC of vces") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("zetarbi", "0.0", false, - QObject::tr ("TC of internal base resistance"))); - Props.append (new Property ("zetarbx", "0.0", false, - QObject::tr ("TC of external base resistance"))); - Props.append (new Property ("zetarcx", "0.0", false, - QObject::tr ("TC of external collector resistance"))); - Props.append (new Property ("zetare", "0.0", false, - QObject::tr ("TC of emitter resistances"))); - Props.append (new Property ("zetaiqf", "0.0", false, - QObject::tr ("TC of iqf"))); - Props.append (new Property ("alkav", "0.0", false, - QObject::tr ("TC of avalanche prefactor") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("aleav", "0.0", false, - QObject::tr ("TC of avalanche exponential factor") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("zetarth", "0.0", false, - QObject::tr ("Exponent factor for temperature dependent thermal resistance"))); - Props.append (new Property ("tef_temp", "1", false, - QObject::tr ("Flag for turning temperature dependence of tef0 on and off"))); - Props.append (new Property ("zetaver", "-1.0", false, - QObject::tr ("TC of Reverse Early voltage"))); - Props.append (new Property ("zetavgbe", "1.0", false, - QObject::tr ("TC of AVER"))); - Props.append (new Property ("dvgbe", "0.0", false, - QObject::tr ("Bandgap difference between base and BE-junction"))); - Props.append (new Property ("aliqfh", "0", false, - QObject::tr ("Frist-order TC of iqfh") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("kiqfh", "0", false, - QObject::tr ("Second-order TC of iqfh") - +" ("+QObject::tr ("1/K^2")+")")); - Props.append (new Property ("flsh", "0", false, - QObject::tr ("Flag for self-heating calculation"))); - Props.append (new Property ("rth", "0.0", false, - QObject::tr ("Thermal resistance") - +" ("+QObject::tr ("K/W")+")")); - Props.append (new Property ("cth", "0.0", false, - QObject::tr ("Thermal capacitance") - +" ("+QObject::tr ("Ws/K")+")")); - Props.append (new Property ("tnom", "27", false, - QObject::tr ("Temperature for which parameters are valid") - +" ("+QObject::tr ("C")+")")); - Props.append (new Property ("dt", "0.0", false, - QObject::tr ("Temperature change for particular transistor") - +" ("+QObject::tr ("K")+")")); - Props.append (new Property ("Temp", "27", false, - QObject::tr ("simulation temperature"))); - - createSymbol (); - tx = x2 + 4; - ty = y1 + 4; - Model = "hicumL0V1p3"; - Name = "T"; -} - -Component * hicumL0V1p3::newOne() -{ - hicumL0V1p3 * p = new hicumL0V1p3(); - p->Props.getFirst()->Value = Props.getFirst()->Value; - p->recreate(0); - return p; -} - -Element * hicumL0V1p3::info(QString& Name, char * &BitmapFile, bool getNewOne) -{ - Name = QObject::tr("npn HICUM L0 v1.3"); - BitmapFile = (char *) "pnpsub_therm"; - - if(getNewOne) return new hicumL0V1p3(); - return 0; -} - -Element * hicumL0V1p3::info_pnp(QString& Name, char * &BitmapFile, bool getNewOne) -{ - Name = QObject::tr("pnp HICUM L0 v1.3"); - BitmapFile = (char *) "pnpsub_therm"; - - if(getNewOne) - { - hicumL0V1p3* p = new hicumL0V1p3(); - p->Props.getFirst()->Value = "pnp"; - p->recreate(0); - return p; - } - return 0; -} - -void hicumL0V1p3::createSymbol() -{ - // normal bipolar - Lines.append(new Line(-10,-15,-10, 15,QPen(Qt::darkBlue,3))); - Lines.append(new Line(-30, 0,-10, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, -5, 0,-15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0,-15, 0,-30,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, 5, 0, 15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 15, 0, 30,QPen(Qt::darkBlue,2))); - - // substrate node - Lines.append(new Line( 9, 0, 30, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 9, -7, 9, 7,QPen(Qt::darkBlue,3))); - - // thermal node - Lines.append(new Line(-30, 20,-20, 20,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-20, 17,-20, 23,QPen(Qt::darkBlue,2))); - - // arrow - if(Props.getFirst()->Value == "npn") { - Lines.append(new Line( -6, 15, 0, 15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 9, 0, 15,QPen(Qt::darkBlue,2))); - } else { - Lines.append(new Line( -5, 10, -5, 16,QPen(Qt::darkBlue,2))); - Lines.append(new Line( -5, 10, 1, 10,QPen(Qt::darkBlue,2))); - } - - // H - Lines.append(new Line(-30,-30,-30,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-30,-27,-26,-27,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-26,-30,-26,-24,QPen(Qt::darkBlue,1))); - // I - Lines.append(new Line(-24,-30,-24,-24,QPen(Qt::darkBlue,1))); - // C - Lines.append(new Line(-22,-30,-22,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-22,-30,-19,-30,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-22,-24,-19,-24,QPen(Qt::darkBlue,1))); - // U - Lines.append(new Line(-17,-30,-17,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-14,-30,-14,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-17,-24,-14,-24,QPen(Qt::darkBlue,1))); - // M - Lines.append(new Line(-12,-30,-12,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line( -8,-30, -8,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-12,-30,-10,-28,QPen(Qt::darkBlue,1))); - Lines.append(new Line( -8,-30,-10,-28,QPen(Qt::darkBlue,1))); - - // terminal definitions - Ports.append(new Port( 0,-30)); // collector - Ports.append(new Port(-30, 0)); // base - Ports.append(new Port( 0, 30)); // emitter - Ports.append(new Port( 30, 0)); // substrate - Ports.append(new Port(-30, 20)); // thermal node - - // relative boundings - x1 = -30; y1 = -30; - x2 = 30; y2 = 30; -} - -QString hicumL0V1p3::netlist() -{ - QString s = "hicumL0V1p3:"+Name; - - // output all node names - foreach(Port *p1, Ports) - s += " "+p1->Connection->Name; // node names - - // output type npn/pnp property - Property *p2 = Props.first(); - if(p2->Value == "npn") - s += " npn=\"1\""; - else - s += " pnp=\"1\""; - - // output all remaining properties - for(p2 = Props.next(); p2 != 0; p2 = Props.next()) - s += " "+p2->Name+"=\""+p2->Value+"\""; - - return s + '\n'; -} diff --git a/qucs/qucs/components/hicumL0V1p3.h b/qucs/qucs/components/hicumL0V1p3.h deleted file mode 100644 index 89c19e0481..0000000000 --- a/qucs/qucs/components/hicumL0V1p3.h +++ /dev/null @@ -1,29 +0,0 @@ -/* - * hicumL0V1p3.h - device definitions for hicumL0V1p3 module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ - -#ifndef hicumL0V1p3_H -#define hicumL0V1p3_H - -#include "component.h" - -class hicumL0V1p3 : public MultiViewComponent -{ - public: - hicumL0V1p3(); - ~hicumL0V1p3() { }; - Component* newOne(); - static Element* info(QString&, char* &, bool getNewOne=false); - static Element* info_pnp(QString&, char* &, bool getNewOne=false); - protected: - void createSymbol(); - QString netlist(); -}; - -#endif /* hicumL0V1p3_H */ diff --git a/qucs/qucs/components/hicumL2V2p1.cpp b/qucs/qucs/components/hicumL2V2p1.cpp deleted file mode 100644 index 4bb90b9d53..0000000000 --- a/qucs/qucs/components/hicumL2V2p1.cpp +++ /dev/null @@ -1,294 +0,0 @@ -/* - * hicumL2V2p1.cpp - device implementations for hicumL2V2p1 module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ - -#include "hicumL2V2p1.h" - -hicumL2V2p1::hicumL2V2p1() -{ - Description = QObject::tr ("HICUM Level 2 v2.1 verilog device"); - - Props.append (new Property ("c10", "1.516E-31", false, - QObject::tr ("GICCR constant"))); - Props.append (new Property ("qp0", "5.939E-15", false, - QObject::tr ("Zero-bias hole charge"))); - Props.append (new Property ("ich", "1.0E11", false, - QObject::tr ("High-current correction for 2D and 3D effects"))); - Props.append (new Property ("hfe", "1.0", false, - QObject::tr ("Emitter minority charge weighting factor in HBTs"))); - Props.append (new Property ("hfc", "0.03999", false, - QObject::tr ("Collector minority charge weighting factor in HBTs"))); - Props.append (new Property ("hjei", "0.435", false, - QObject::tr ("B-E depletion charge weighting factor in HBTs"))); - Props.append (new Property ("hjci", "0.09477", false, - QObject::tr ("B-C depletion charge weighting factor in HBTs"))); - Props.append (new Property ("ibeis", "3.47E-20", false, - QObject::tr ("Internal B-E saturation current"))); - Props.append (new Property ("mbei", "1.025", false, - QObject::tr ("Internal B-E current ideality factor"))); - Props.append (new Property ("ireis", "390E-12", false, - QObject::tr ("Internal B-E recombination saturation current"))); - Props.append (new Property ("mrei", "3", false, - QObject::tr ("Internal B-E recombination current ideality factor"))); - Props.append (new Property ("ibeps", "4.18321E-21", false, - QObject::tr ("Peripheral B-E saturation current"))); - Props.append (new Property ("mbep", "1.045", false, - QObject::tr ("Peripheral B-E current ideality factor"))); - Props.append (new Property ("ireps", "1.02846E-14", false, - QObject::tr ("Peripheral B-E recombination saturation current"))); - Props.append (new Property ("mrep", "3", false, - QObject::tr ("Peripheral B-E recombination current ideality factor"))); - Props.append (new Property ("mcf", "1.0", false, - QObject::tr ("Non-ideality factor for III-V HBTs"))); - Props.append (new Property ("ibcis", "3.02613E-18", false, - QObject::tr ("Internal B-C saturation current"))); - Props.append (new Property ("mbci", "1.0", false, - QObject::tr ("Internal B-C current ideality factor"))); - Props.append (new Property ("ibcxs", "4.576E-29", false, - QObject::tr ("External B-C saturation current"))); - Props.append (new Property ("mbcx", "1.0", false, - QObject::tr ("External B-C current ideality factor"))); - Props.append (new Property ("ibets", "0.0", false, - QObject::tr ("B-E tunneling saturation current"))); - Props.append (new Property ("abet", "36.74", false, - QObject::tr ("Exponent factor for tunneling current"))); - Props.append (new Property ("favl", "14.97", false, - QObject::tr ("Avalanche current factor"))); - Props.append (new Property ("qavl", "7.2407E-14", false, - QObject::tr ("Exponent factor for avalanche current"))); - Props.append (new Property ("alfav", "0.0", false, - QObject::tr ("Relative TC for FAVL"))); - Props.append (new Property ("alqav", "0.0", false, - QObject::tr ("Relative TC for QAVL"))); - Props.append (new Property ("rbi0", "7.9", false, - QObject::tr ("Zero bias internal base resistance"))); - Props.append (new Property ("rbx", "13.15", false, - QObject::tr ("External base series resistance"))); - Props.append (new Property ("fgeo", "0.724", false, - QObject::tr ("Factor for geometry dependence of emitter current crowding"))); - Props.append (new Property ("fdqr0", "0", false, - QObject::tr ("Correction factor for modulation by B-E and B-C space charge layer"))); - Props.append (new Property ("fcrbi", "0.0", false, - QObject::tr ("Ratio of HF shunt to total internal capacitance (lateral NQS effect)"))); - Props.append (new Property ("fqi", "1.0", false, - QObject::tr ("Ration of internal to total minority charge"))); - Props.append (new Property ("re", "9.77", false, - QObject::tr ("Emitter series resistance"))); - Props.append (new Property ("rcx", "10", false, - QObject::tr ("External collector series resistance"))); - Props.append (new Property ("itss", "2.81242E-19", false, - QObject::tr ("Substrate transistor transfer saturation current"))); - Props.append (new Property ("msf", "1.0", false, - QObject::tr ("Forward ideality factor of substrate transfer current"))); - Props.append (new Property ("iscs", "7.6376E-17", false, - QObject::tr ("C-S diode saturation current"))); - Props.append (new Property ("msc", "1.0", false, - QObject::tr ("Ideality factor of C-S diode current"))); - Props.append (new Property ("tsf", "1.733E-8", false, - QObject::tr ("Transit time for forward operation of substrate transistor"))); - Props.append (new Property ("rsu", "800", false, - QObject::tr ("Substrate series resistance"))); - Props.append (new Property ("csu", "1.778E-14", false, - QObject::tr ("Substrate shunt capacitance"))); - Props.append (new Property ("cjei0", "5.24382E-14", false, - QObject::tr ("Internal B-E zero-bias depletion capacitance"))); - Props.append (new Property ("vdei", "0.9956", false, - QObject::tr ("Internal B-E built-in potential"))); - Props.append (new Property ("zei", "0.4", false, - QObject::tr ("Internal B-E grading coefficient"))); - Props.append (new Property ("aljei", "2.5", false, - QObject::tr ("Ratio of maximum to zero-bias value of internal B-E capacitance"))); - Props.append (new Property ("cjep0", "0", false, - QObject::tr ("Peripheral B-E zero-bias depletion capacitance"))); - Props.append (new Property ("vdep", "1", false, - QObject::tr ("Peripheral B-E built-in potential"))); - Props.append (new Property ("zep", "0.01", false, - QObject::tr ("Peripheral B-E grading coefficient"))); - Props.append (new Property ("aljep", "2.5", false, - QObject::tr ("Ratio of maximum to zero-bias value of peripheral B-E capacitance"))); - Props.append (new Property ("cjci0", "4.46887E-15", false, - QObject::tr ("Internal B-C zero-bias depletion capacitance"))); - Props.append (new Property ("vdci", "0.7", false, - QObject::tr ("Internal B-C built-in potential"))); - Props.append (new Property ("zci", "0.38", false, - QObject::tr ("Internal B-C grading coefficient"))); - Props.append (new Property ("vptci", "100", false, - QObject::tr ("Internal B-C punch-through voltage"))); - Props.append (new Property ("cjcx0", "1.55709E-14", false, - QObject::tr ("External B-C zero-bias depletion capacitance"))); - Props.append (new Property ("vdcx", "0.733", false, - QObject::tr ("External B-C built-in potential"))); - Props.append (new Property ("zcx", "0.34", false, - QObject::tr ("External B-C grading coefficient"))); - Props.append (new Property ("vptcx", "100", false, - QObject::tr ("External B-C punch-through voltage"))); - Props.append (new Property ("fbc", "0.3487", false, - QObject::tr ("Partitioning factor of parasitic B-C capacitance"))); - Props.append (new Property ("cjs0", "17.68E-15", false, - QObject::tr ("C-S zero-bias depletion capacitance"))); - Props.append (new Property ("vds", "0.621625", false, - QObject::tr ("C-S built-in potential"))); - Props.append (new Property ("zs", "0.122136", false, - QObject::tr ("C-S grading coefficient"))); - Props.append (new Property ("vpts", "1000", false, - QObject::tr ("C-S punch-through voltage"))); - Props.append (new Property ("t0", "1.28E-12", false, - QObject::tr ("Low current forward transit time at VBC=0V"))); - Props.append (new Property ("dt0h", "260E-15", false, - QObject::tr ("Time constant for base and B-C space charge layer width modulation"))); - Props.append (new Property ("tbvl", "2.0E-13", false, - QObject::tr ("Time constant for modelling carrier jam at low VCE"))); - Props.append (new Property ("tef0", "0.0", false, - QObject::tr ("Neutral emitter storage time"))); - Props.append (new Property ("gtfe", "1.0", false, - QObject::tr ("Exponent factor for current dependence of neutral emitter storage time"))); - Props.append (new Property ("thcs", "46E-15", false, - QObject::tr ("Saturation time constant at high current densities"))); - Props.append (new Property ("alhc", "0.08913", false, - QObject::tr ("Smoothing factor for current dependence of base and collector transit time"))); - Props.append (new Property ("fthc", "0.8778", false, - QObject::tr ("Partitioning factor for base and collector portion"))); - Props.append (new Property ("rci0", "50.4277", false, - QObject::tr ("Internal collector resistance at low electric field"))); - Props.append (new Property ("vlim", "0.9", false, - QObject::tr ("Voltage separating ohmic and saturation velocity regime"))); - Props.append (new Property ("vces", "0.01", false, - QObject::tr ("Internal C-E saturation voltage"))); - Props.append (new Property ("vpt", "10", false, - QObject::tr ("Collector punch-through voltage"))); - Props.append (new Property ("tr", "1.0E-11", false, - QObject::tr ("Storage time for inverse operation"))); - Props.append (new Property ("ceox", "1.71992E-15", false, - QObject::tr ("Total parasitic B-E capacitance"))); - Props.append (new Property ("ccox", "4.9E-15", false, - QObject::tr ("Total parasitic B-C capacitance"))); - Props.append (new Property ("alqf", "0.1288", false, - QObject::tr ("Factor for additional delay time of minority charge"))); - Props.append (new Property ("alit", "1.0", false, - QObject::tr ("Factor for additional delay time of transfer current"))); - Props.append (new Property ("kf", "2.83667E-9", false, - QObject::tr ("Flicker noise coefficient"))); - Props.append (new Property ("af", "2.0", false, - QObject::tr ("Flicker noise exponent factor"))); - Props.append (new Property ("krbi", "1.0", false, - QObject::tr ("Noise factor for internal base resistance"))); - Props.append (new Property ("latb", "10.479", false, - QObject::tr ("Scaling factor for collector minority charge in direction of emitter width"))); - Props.append (new Property ("latl", "0.300012", false, - QObject::tr ("Scaling factor for collector minority charge in direction of emitter length"))); - Props.append (new Property ("vgb", "1.112", false, - QObject::tr ("Bandgap voltage extrapolated to 0 K"))); - Props.append (new Property ("alt0", "0.0017580", false, - QObject::tr ("First order relative TC of parameter T0"))); - Props.append (new Property ("kt0", "4.07E-6", false, - QObject::tr ("Second order relative TC of parameter T0"))); - Props.append (new Property ("zetaci", "0.7", false, - QObject::tr ("Temperature exponent for RCI0"))); - Props.append (new Property ("zetacx", "1.0", false, - QObject::tr ("Temperature exponent of mobility in substrate transistor transit time"))); - Props.append (new Property ("alvs", "0.001", false, - QObject::tr ("Relative TC of saturation drift velocity"))); - Props.append (new Property ("alces", "0.000125", false, - QObject::tr ("Relative TC of VCES"))); - Props.append (new Property ("zetarbi", "0.0", false, - QObject::tr ("Temperature exponent of internal base resistance"))); - Props.append (new Property ("zetarbx", "0.2", false, - QObject::tr ("Temperature exponent of external base resistance"))); - Props.append (new Property ("zetarcx", "0.21", false, - QObject::tr ("Temperature exponent of external collector resistance"))); - Props.append (new Property ("zetare", "0.7", false, - QObject::tr ("Temperature exponent of emitter resistance"))); - Props.append (new Property ("alb", "0.007", false, - QObject::tr ("Relative TC of forward current gain for V2.1 model"))); - Props.append (new Property ("rth", "1293.95", false, - QObject::tr ("Thermal resistance"))); - Props.append (new Property ("cth", "7.22203E-11", false, - QObject::tr ("Thermal capacitance"))); - Props.append (new Property ("tnom", "27.0", false, - QObject::tr ("Temperature at which parameters are specified"))); - Props.append (new Property ("dt", "0.0", false, - QObject::tr ("Temperature change w.r.t. chip temperature for particular transistor"))); - Props.append (new Property ("Temp", "27", false, - QObject::tr ("simulation temperature"))); - - createSymbol (); - tx = x2 + 4; - ty = y1 + 4; - Model = "hicumL2V2p1"; - Name = "T"; -} - -Component * hicumL2V2p1::newOne() -{ - hicumL2V2p1 * p = new hicumL2V2p1(); - p->Props.getFirst()->Value = Props.getFirst()->Value; - p->recreate(0); - return p; -} - -Element * hicumL2V2p1::info(QString& Name, char * &BitmapFile, bool getNewOne) -{ - Name = QObject::tr("HICUM L2 v2.1"); - BitmapFile = (char *) "npnsub_therm"; - - if(getNewOne) return new hicumL2V2p1(); - return 0; -} - -void hicumL2V2p1::createSymbol() -{ - // normal bipolar - Lines.append(new Line(-10,-15,-10, 15,QPen(Qt::darkBlue,3))); - Lines.append(new Line(-30, 0,-10, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, -5, 0,-15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0,-15, 0,-30,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, 5, 0, 15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 15, 0, 30,QPen(Qt::darkBlue,2))); - - // substrate node - Lines.append(new Line( 9, 0, 30, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 9, -7, 9, 7,QPen(Qt::darkBlue,3))); - - // thermal node - Lines.append(new Line(-30, 20,-20, 20,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-20, 17,-20, 23,QPen(Qt::darkBlue,2))); - - // arrow - Lines.append(new Line( -6, 15, 0, 15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 9, 0, 15,QPen(Qt::darkBlue,2))); - - // H - Lines.append(new Line(-30,-30,-30,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-30,-27,-26,-27,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-26,-30,-26,-24,QPen(Qt::darkBlue,1))); - // I - Lines.append(new Line(-24,-30,-24,-24,QPen(Qt::darkBlue,1))); - // C - Lines.append(new Line(-22,-30,-22,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-22,-30,-19,-30,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-22,-24,-19,-24,QPen(Qt::darkBlue,1))); - // U - Lines.append(new Line(-17,-30,-17,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-14,-30,-14,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-17,-24,-14,-24,QPen(Qt::darkBlue,1))); - // M - Lines.append(new Line(-12,-30,-12,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line( -8,-30, -8,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-12,-30,-10,-28,QPen(Qt::darkBlue,1))); - Lines.append(new Line( -8,-30,-10,-28,QPen(Qt::darkBlue,1))); - - Ports.append(new Port( 0,-30)); // collector - Ports.append(new Port(-30, 0)); // base - Ports.append(new Port( 0, 30)); // emitter - Ports.append(new Port( 30, 0)); // substrate - Ports.append(new Port(-30, 20)); // thermal node - - x1 = -30; y1 = -30; - x2 = 30; y2 = 30; -} diff --git a/qucs/qucs/components/hicumL2V2p1.h b/qucs/qucs/components/hicumL2V2p1.h deleted file mode 100644 index a1d4062180..0000000000 --- a/qucs/qucs/components/hicumL2V2p1.h +++ /dev/null @@ -1,27 +0,0 @@ -/* - * hicumL2V2p1.h - device definitions for hicumL2V2p1 module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ - -#ifndef hicumL2V2p1_H -#define hicumL2V2p1_H - -#include "component.h" - -class hicumL2V2p1 : public Component -{ - public: - hicumL2V2p1(); - ~hicumL2V2p1() { }; - Component* newOne(); - static Element* info(QString&, char* &, bool getNewOne=false); - protected: - void createSymbol(); -}; - -#endif /* hicumL2V2p1_H */ diff --git a/qucs/qucs/components/hicumL2V2p23.cpp b/qucs/qucs/components/hicumL2V2p23.cpp deleted file mode 100644 index eb8e4360b0..0000000000 --- a/qucs/qucs/components/hicumL2V2p23.cpp +++ /dev/null @@ -1,383 +0,0 @@ -/* - * hicumL2V2p23.cpp - device implementations for hicumL2V2p23 module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ - -#include "hicumL2V2p23.h" - -hicumL2V2p23::hicumL2V2p23() -{ - Description = QObject::tr ("HICUM Level 2 v2.23 verilog device"); - - Props.append (new Property ("c10", "2.0E-30", false, - QObject::tr ("GICCR constant") - +" ("+QObject::tr ("A^2s")+")")); - Props.append (new Property ("qp0", "2.0E-14", false, - QObject::tr ("Zero-bias hole charge") - +" ("+QObject::tr ("Coul")+")")); - Props.append (new Property ("ich", "0.0", false, - QObject::tr ("High-current correction for 2D and 3D effects") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("hfe", "1.0", false, - QObject::tr ("Emitter minority charge weighting factor in HBTs"))); - Props.append (new Property ("hfc", "1.0", false, - QObject::tr ("Collector minority charge weighting factor in HBTs"))); - Props.append (new Property ("hjei", "1.0", false, - QObject::tr ("B-E depletion charge weighting factor in HBTs"))); - Props.append (new Property ("hjci", "1.0", false, - QObject::tr ("B-C depletion charge weighting factor in HBTs"))); - Props.append (new Property ("ibeis", "1.0E-18", false, - QObject::tr ("Internal B-E saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mbei", "1.0", false, - QObject::tr ("Internal B-E current ideality factor"))); - Props.append (new Property ("ireis", "0.0", false, - QObject::tr ("Internal B-E recombination saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mrei", "2.0", false, - QObject::tr ("Internal B-E recombination current ideality factor"))); - Props.append (new Property ("ibeps", "0.0", false, - QObject::tr ("Peripheral B-E saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mbep", "1.0", false, - QObject::tr ("Peripheral B-E current ideality factor"))); - Props.append (new Property ("ireps", "0.0", false, - QObject::tr ("Peripheral B-E recombination saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mrep", "2.0", false, - QObject::tr ("Peripheral B-E recombination current ideality factor"))); - Props.append (new Property ("mcf", "1.0", false, - QObject::tr ("Non-ideality factor for III-V HBTs"))); - Props.append (new Property ("tbhrec", "0.0", false, - QObject::tr ("Base current recombination time constant at B-C barrier for high forward injection") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("ibcis", "1.0E-16", false, - QObject::tr ("Internal B-C saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mbci", "1.0", false, - QObject::tr ("Internal B-C current ideality factor"))); - Props.append (new Property ("ibcxs", "0.0", false, - QObject::tr ("External B-C saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mbcx", "1.0", false, - QObject::tr ("External B-C current ideality factor"))); - Props.append (new Property ("ibets", "0.0", false, - QObject::tr ("B-E tunneling saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("abet", "40", false, - QObject::tr ("Exponent factor for tunneling current"))); - Props.append (new Property ("tunode", "1", false, - QObject::tr ("Specifies the base node connection for the tunneling current"))); - Props.append (new Property ("favl", "0.0", false, - QObject::tr ("Avalanche current factor") - +" ("+QObject::tr ("1/V")+")")); - Props.append (new Property ("qavl", "0.0", false, - QObject::tr ("Exponent factor for avalanche current") - +" ("+QObject::tr ("Coul")+")")); - Props.append (new Property ("alfav", "0.0", false, - QObject::tr ("Relative TC for FAVL") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("alqav", "0.0", false, - QObject::tr ("Relative TC for QAVL") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("rbi0", "0.0", false, - QObject::tr ("Zero bias internal base resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("rbx", "0.0", false, - QObject::tr ("External base series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("fgeo", "0.6557", false, - QObject::tr ("Factor for geometry dependence of emitter current crowding"))); - Props.append (new Property ("fdqr0", "0.0", false, - QObject::tr ("Correction factor for modulation by B-E and B-C space charge layer"))); - Props.append (new Property ("fcrbi", "0.0", false, - QObject::tr ("Ratio of HF shunt to total internal capacitance (lateral NQS effect)"))); - Props.append (new Property ("fqi", "1.0", false, - QObject::tr ("Ration of internal to total minority charge"))); - Props.append (new Property ("re", "0.0", false, - QObject::tr ("Emitter series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("rcx", "0.0", false, - QObject::tr ("External collector series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("itss", "0.0", false, - QObject::tr ("Substrate transistor transfer saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("msf", "1.0", false, - QObject::tr ("Forward ideality factor of substrate transfer current"))); - Props.append (new Property ("iscs", "0.0", false, - QObject::tr ("C-S diode saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("msc", "1.0", false, - QObject::tr ("Ideality factor of C-S diode current"))); - Props.append (new Property ("tsf", "0.0", false, - QObject::tr ("Transit time for forward operation of substrate transistor") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("rsu", "0.0", false, - QObject::tr ("Substrate series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("csu", "0.0", false, - QObject::tr ("Substrate shunt capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("cjei0", "1.0E-20", false, - QObject::tr ("Internal B-E zero-bias depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vdei", "0.9", false, - QObject::tr ("Internal B-E built-in potential") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zei", "0.5", false, - QObject::tr ("Internal B-E grading coefficient"))); - Props.append (new Property ("ajei", "2.5", false, - QObject::tr ("Ratio of maximum to zero-bias value of internal B-E capacitance"))); - Props.append (new Property ("cjep0", "1.0E-20", false, - QObject::tr ("Peripheral B-E zero-bias depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vdep", "0.9", false, - QObject::tr ("Peripheral B-E built-in potential") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zep", "0.5", false, - QObject::tr ("Peripheral B-E grading coefficient"))); - Props.append (new Property ("ajep", "2.5", false, - QObject::tr ("Ratio of maximum to zero-bias value of peripheral B-E capacitance"))); - Props.append (new Property ("cjci0", "1.0E-20", false, - QObject::tr ("Internal B-C zero-bias depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vdci", "0.7", false, - QObject::tr ("Internal B-C built-in potential") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zci", "0.4", false, - QObject::tr ("Internal B-C grading coefficient"))); - Props.append (new Property ("vptci", "100", false, - QObject::tr ("Internal B-C punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("cjcx0", "1.0E-20", false, - QObject::tr ("External B-C zero-bias depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vdcx", "0.7", false, - QObject::tr ("External B-C built-in potential") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zcx", "0.4", false, - QObject::tr ("External B-C grading coefficient"))); - Props.append (new Property ("vptcx", "100", false, - QObject::tr ("External B-C punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("fbcpar", "0.0", false, - QObject::tr ("Partitioning factor of parasitic B-C cap"))); - Props.append (new Property ("fbepar", "1.0", false, - QObject::tr ("Partitioning factor of parasitic B-E cap"))); - Props.append (new Property ("cjs0", "0.0", false, - QObject::tr ("C-S zero-bias depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vds", "0.6", false, - QObject::tr ("C-S built-in potential") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zs", "0.5", false, - QObject::tr ("C-S grading coefficient"))); - Props.append (new Property ("vpts", "100", false, - QObject::tr ("C-S punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("t0", "0.0", false, - QObject::tr ("Low current forward transit time at VBC=0V") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("dt0h", "0.0", false, - QObject::tr ("Time constant for base and B-C space charge layer width modulation") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("tbvl", "0.0", false, - QObject::tr ("Time constant for modelling carrier jam at low VCE") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("tef0", "0.0", false, - QObject::tr ("Neutral emitter storage time") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("gtfe", "1.0", false, - QObject::tr ("Exponent factor for current dependence of neutral emitter storage time"))); - Props.append (new Property ("thcs", "0.0", false, - QObject::tr ("Saturation time constant at high current densities") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("ahc", "0.1", false, - QObject::tr ("Smoothing factor for current dependence of base and collector transit time"))); - Props.append (new Property ("fthc", "0.0", false, - QObject::tr ("Partitioning factor for base and collector portion"))); - Props.append (new Property ("rci0", "150", false, - QObject::tr ("Internal collector resistance at low electric field") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("vlim", "0.5", false, - QObject::tr ("Voltage separating ohmic and saturation velocity regime") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vces", "0.1", false, - QObject::tr ("Internal C-E saturation voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vpt", "0.0", false, - QObject::tr ("Collector punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("tr", "0.0", false, - QObject::tr ("Storage time for inverse operation") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("cbepar", "0.0", false, - QObject::tr ("Total parasitic B-E capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("cbcpar", "0.0", false, - QObject::tr ("Total parasitic B-C capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("alqf", "0.0", false, - QObject::tr ("Factor for additional delay time of minority charge"))); - Props.append (new Property ("alit", "0.0", false, - QObject::tr ("Factor for additional delay time of transfer current"))); - Props.append (new Property ("flnqs", "0", false, - QObject::tr ("Flag for turning on and off of vertical NQS effect"))); - Props.append (new Property ("kf", "0.0", false, - QObject::tr ("Flicker noise coefficient"))); - Props.append (new Property ("af", "2.0", false, - QObject::tr ("Flicker noise exponent factor"))); - Props.append (new Property ("cfbe", "-1", false, - QObject::tr ("Flag for determining where to tag the flicker noise source"))); - Props.append (new Property ("latb", "0.0", false, - QObject::tr ("Scaling factor for collector minority charge in direction of emitter width"))); - Props.append (new Property ("latl", "0.0", false, - QObject::tr ("Scaling factor for collector minority charge in direction of emitter length"))); - Props.append (new Property ("vgb", "1.17", false, - QObject::tr ("Bandgap voltage extrapolated to 0 K") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("alt0", "0.0", false, - QObject::tr ("First order relative TC of parameter T0") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("kt0", "0.0", false, - QObject::tr ("Second order relative TC of parameter T0"))); - Props.append (new Property ("zetaci", "0.0", false, - QObject::tr ("Temperature exponent for RCI0"))); - Props.append (new Property ("alvs", "0.0", false, - QObject::tr ("Relative TC of saturation drift velocity") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("alces", "0.0", false, - QObject::tr ("Relative TC of VCES") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("zetarbi", "0.0", false, - QObject::tr ("Temperature exponent of internal base resistance"))); - Props.append (new Property ("zetarbx", "0.0", false, - QObject::tr ("Temperature exponent of external base resistance"))); - Props.append (new Property ("zetarcx", "0.0", false, - QObject::tr ("Temperature exponent of external collector resistance"))); - Props.append (new Property ("zetare", "0.0", false, - QObject::tr ("Temperature exponent of emitter resistance"))); - Props.append (new Property ("zetacx", "1.0", false, - QObject::tr ("Temperature exponent of mobility in substrate transistor transit time"))); - Props.append (new Property ("vge", "1.17", false, - QObject::tr ("Effective emitter bandgap voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vgc", "1.17", false, - QObject::tr ("Effective collector bandgap voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vgs", "1.17", false, - QObject::tr ("Effective substrate bandgap voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("f1vg", "-1.02377e-4", false, - QObject::tr ("Coefficient K1 in T-dependent band-gap equation"))); - Props.append (new Property ("f2vg", "4.3215e-4", false, - QObject::tr ("Coefficient K2 in T-dependent band-gap equation"))); - Props.append (new Property ("zetact", "3.0", false, - QObject::tr ("Exponent coefficient in transfer current temperature dependence"))); - Props.append (new Property ("zetabet", "3.5", false, - QObject::tr ("Exponent coefficient in B-E junction current temperature dependence"))); - Props.append (new Property ("alb", "0.0", false, - QObject::tr ("Relative TC of forward current gain for V2.1 model") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("flsh", "0", false, - QObject::tr ("Flag for turning on and off self-heating effect"))); - Props.append (new Property ("rth", "0.0", false, - QObject::tr ("Thermal resistance") - +" ("+QObject::tr ("K/W")+")")); - Props.append (new Property ("cth", "0.0", false, - QObject::tr ("Thermal capacitance") - +" ("+QObject::tr ("J/W")+")")); - Props.append (new Property ("flcomp", "0.0", false, - QObject::tr ("Flag for compatibility with v2.1 model (0=v2.1)"))); - Props.append (new Property ("tnom", "27.0", false, - QObject::tr ("Temperature at which parameters are specified") - +" ("+QObject::tr ("C")+")")); - Props.append (new Property ("dt", "0.0", false, - QObject::tr ("Temperature change w.r.t. chip temperature for particular transistor") - +" ("+QObject::tr ("K")+")")); - Props.append (new Property ("Temp", "27", false, - QObject::tr ("simulation temperature"))); - - createSymbol (); - tx = x2 + 4; - ty = y1 + 4; - Model = "hicumL2V2p23"; - Name = "T"; -} - -Component * hicumL2V2p23::newOne() -{ - hicumL2V2p23 * p = new hicumL2V2p23(); - p->Props.getFirst()->Value = Props.getFirst()->Value; - p->recreate(0); - return p; -} - -Element * hicumL2V2p23::info(QString& Name, char * &BitmapFile, bool getNewOne) -{ - Name = QObject::tr("HICUM L2 v2.23"); - BitmapFile = (char *) "npnsub_therm"; - - if(getNewOne) return new hicumL2V2p23(); - return 0; -} - -void hicumL2V2p23::createSymbol() -{ - // normal bipolar - Lines.append(new Line(-10,-15,-10, 15,QPen(Qt::darkBlue,3))); - Lines.append(new Line(-30, 0,-10, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, -5, 0,-15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0,-15, 0,-30,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, 5, 0, 15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 15, 0, 30,QPen(Qt::darkBlue,2))); - - // substrate node - Lines.append(new Line( 9, 0, 30, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 9, -7, 9, 7,QPen(Qt::darkBlue,3))); - - // thermal node - Lines.append(new Line(-30, 20,-20, 20,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-20, 17,-20, 23,QPen(Qt::darkBlue,2))); - - // arrow - Lines.append(new Line( -6, 15, 0, 15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 9, 0, 15,QPen(Qt::darkBlue,2))); - - // H - Lines.append(new Line(-30,-30,-30,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-30,-27,-26,-27,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-26,-30,-26,-24,QPen(Qt::darkBlue,1))); - // I - Lines.append(new Line(-24,-30,-24,-24,QPen(Qt::darkBlue,1))); - // C - Lines.append(new Line(-22,-30,-22,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-22,-30,-19,-30,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-22,-24,-19,-24,QPen(Qt::darkBlue,1))); - // U - Lines.append(new Line(-17,-30,-17,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-14,-30,-14,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-17,-24,-14,-24,QPen(Qt::darkBlue,1))); - // M - Lines.append(new Line(-12,-30,-12,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line( -8,-30, -8,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-12,-30,-10,-28,QPen(Qt::darkBlue,1))); - Lines.append(new Line( -8,-30,-10,-28,QPen(Qt::darkBlue,1))); - - // terminal definitions - Ports.append(new Port( 0,-30)); // collector - Ports.append(new Port(-30, 0)); // base - Ports.append(new Port( 0, 30)); // emitter - Ports.append(new Port( 30, 0)); // substrate - Ports.append(new Port(-30, 20)); // thermal node - - // relative boundings - x1 = -30; y1 = -30; - x2 = 30; y2 = 30; -} diff --git a/qucs/qucs/components/hicumL2V2p23.h b/qucs/qucs/components/hicumL2V2p23.h deleted file mode 100644 index f5e4128b32..0000000000 --- a/qucs/qucs/components/hicumL2V2p23.h +++ /dev/null @@ -1,27 +0,0 @@ -/* - * hicumL2V2p23.h - device definitions for hicumL2V2p23 module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ - -#ifndef hicumL2V2p23_H -#define hicumL2V2p23_H - -#include "component.h" - -class hicumL2V2p23 : public Component -{ - public: - hicumL2V2p23(); - ~hicumL2V2p23() { }; - Component* newOne(); - static Element* info(QString&, char* &, bool getNewOne=false); - protected: - void createSymbol(); -}; - -#endif /* hicumL2V2p23_H */ diff --git a/qucs/qucs/components/hicumL2V2p24.cpp b/qucs/qucs/components/hicumL2V2p24.cpp deleted file mode 100644 index d92ef481af..0000000000 --- a/qucs/qucs/components/hicumL2V2p24.cpp +++ /dev/null @@ -1,383 +0,0 @@ -/* - * hicumL2V2p24.cpp - device implementations for hicumL2V2p24 module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ - -#include "hicumL2V2p24.h" - -hicumL2V2p24::hicumL2V2p24() -{ - Description = QObject::tr ("HICUM Level 2 v2.24 verilog device"); - - Props.append (new Property ("c10", "2.0E-30", false, - QObject::tr ("GICCR constant") - +" ("+QObject::tr ("A^2s")+")")); - Props.append (new Property ("qp0", "2.0E-14", false, - QObject::tr ("Zero-bias hole charge") - +" ("+QObject::tr ("Coul")+")")); - Props.append (new Property ("ich", "0.0", false, - QObject::tr ("High-current correction for 2D and 3D effects") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("hfe", "1.0", false, - QObject::tr ("Emitter minority charge weighting factor in HBTs"))); - Props.append (new Property ("hfc", "1.0", false, - QObject::tr ("Collector minority charge weighting factor in HBTs"))); - Props.append (new Property ("hjei", "1.0", false, - QObject::tr ("B-E depletion charge weighting factor in HBTs"))); - Props.append (new Property ("hjci", "1.0", false, - QObject::tr ("B-C depletion charge weighting factor in HBTs"))); - Props.append (new Property ("ibeis", "1.0E-18", false, - QObject::tr ("Internal B-E saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mbei", "1.0", false, - QObject::tr ("Internal B-E current ideality factor"))); - Props.append (new Property ("ireis", "0.0", false, - QObject::tr ("Internal B-E recombination saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mrei", "2.0", false, - QObject::tr ("Internal B-E recombination current ideality factor"))); - Props.append (new Property ("ibeps", "0.0", false, - QObject::tr ("Peripheral B-E saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mbep", "1.0", false, - QObject::tr ("Peripheral B-E current ideality factor"))); - Props.append (new Property ("ireps", "0.0", false, - QObject::tr ("Peripheral B-E recombination saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mrep", "2.0", false, - QObject::tr ("Peripheral B-E recombination current ideality factor"))); - Props.append (new Property ("mcf", "1.0", false, - QObject::tr ("Non-ideality factor for III-V HBTs"))); - Props.append (new Property ("tbhrec", "0.0", false, - QObject::tr ("Base current recombination time constant at B-C barrier for high forward injection") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("ibcis", "1.0E-16", false, - QObject::tr ("Internal B-C saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mbci", "1.0", false, - QObject::tr ("Internal B-C current ideality factor"))); - Props.append (new Property ("ibcxs", "0.0", false, - QObject::tr ("External B-C saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mbcx", "1.0", false, - QObject::tr ("External B-C current ideality factor"))); - Props.append (new Property ("ibets", "0.0", false, - QObject::tr ("B-E tunneling saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("abet", "40", false, - QObject::tr ("Exponent factor for tunneling current"))); - Props.append (new Property ("tunode", "1", false, - QObject::tr ("Specifies the base node connection for the tunneling current"))); - Props.append (new Property ("favl", "0.0", false, - QObject::tr ("Avalanche current factor") - +" ("+QObject::tr ("1/V")+")")); - Props.append (new Property ("qavl", "0.0", false, - QObject::tr ("Exponent factor for avalanche current") - +" ("+QObject::tr ("Coul")+")")); - Props.append (new Property ("alfav", "0.0", false, - QObject::tr ("Relative TC for FAVL") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("alqav", "0.0", false, - QObject::tr ("Relative TC for QAVL") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("rbi0", "0.0", false, - QObject::tr ("Zero bias internal base resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("rbx", "0.0", false, - QObject::tr ("External base series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("fgeo", "0.6557", false, - QObject::tr ("Factor for geometry dependence of emitter current crowding"))); - Props.append (new Property ("fdqr0", "0.0", false, - QObject::tr ("Correction factor for modulation by B-E and B-C space charge layer"))); - Props.append (new Property ("fcrbi", "0.0", false, - QObject::tr ("Ratio of HF shunt to total internal capacitance (lateral NQS effect)"))); - Props.append (new Property ("fqi", "1.0", false, - QObject::tr ("Ration of internal to total minority charge"))); - Props.append (new Property ("re", "0.0", false, - QObject::tr ("Emitter series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("rcx", "0.0", false, - QObject::tr ("External collector series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("itss", "0.0", false, - QObject::tr ("Substrate transistor transfer saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("msf", "1.0", false, - QObject::tr ("Forward ideality factor of substrate transfer current"))); - Props.append (new Property ("iscs", "0.0", false, - QObject::tr ("C-S diode saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("msc", "1.0", false, - QObject::tr ("Ideality factor of C-S diode current"))); - Props.append (new Property ("tsf", "0.0", false, - QObject::tr ("Transit time for forward operation of substrate transistor") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("rsu", "0.0", false, - QObject::tr ("Substrate series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("csu", "0.0", false, - QObject::tr ("Substrate shunt capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("cjei0", "1.0E-20", false, - QObject::tr ("Internal B-E zero-bias depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vdei", "0.9", false, - QObject::tr ("Internal B-E built-in potential") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zei", "0.5", false, - QObject::tr ("Internal B-E grading coefficient"))); - Props.append (new Property ("ajei", "2.5", false, - QObject::tr ("Ratio of maximum to zero-bias value of internal B-E capacitance"))); - Props.append (new Property ("cjep0", "1.0E-20", false, - QObject::tr ("Peripheral B-E zero-bias depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vdep", "0.9", false, - QObject::tr ("Peripheral B-E built-in potential") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zep", "0.5", false, - QObject::tr ("Peripheral B-E grading coefficient"))); - Props.append (new Property ("ajep", "2.5", false, - QObject::tr ("Ratio of maximum to zero-bias value of peripheral B-E capacitance"))); - Props.append (new Property ("cjci0", "1.0E-20", false, - QObject::tr ("Internal B-C zero-bias depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vdci", "0.7", false, - QObject::tr ("Internal B-C built-in potential") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zci", "0.4", false, - QObject::tr ("Internal B-C grading coefficient"))); - Props.append (new Property ("vptci", "100", false, - QObject::tr ("Internal B-C punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("cjcx0", "1.0E-20", false, - QObject::tr ("External B-C zero-bias depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vdcx", "0.7", false, - QObject::tr ("External B-C built-in potential") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zcx", "0.4", false, - QObject::tr ("External B-C grading coefficient"))); - Props.append (new Property ("vptcx", "100", false, - QObject::tr ("External B-C punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("fbcpar", "0.0", false, - QObject::tr ("Partitioning factor of parasitic B-C cap"))); - Props.append (new Property ("fbepar", "1.0", false, - QObject::tr ("Partitioning factor of parasitic B-E cap"))); - Props.append (new Property ("cjs0", "0.0", false, - QObject::tr ("C-S zero-bias depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vds", "0.6", false, - QObject::tr ("C-S built-in potential") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zs", "0.5", false, - QObject::tr ("C-S grading coefficient"))); - Props.append (new Property ("vpts", "100", false, - QObject::tr ("C-S punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("t0", "0.0", false, - QObject::tr ("Low current forward transit time at VBC=0V") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("dt0h", "0.0", false, - QObject::tr ("Time constant for base and B-C space charge layer width modulation") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("tbvl", "0.0", false, - QObject::tr ("Time constant for modelling carrier jam at low VCE") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("tef0", "0.0", false, - QObject::tr ("Neutral emitter storage time") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("gtfe", "1.0", false, - QObject::tr ("Exponent factor for current dependence of neutral emitter storage time"))); - Props.append (new Property ("thcs", "0.0", false, - QObject::tr ("Saturation time constant at high current densities") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("ahc", "0.1", false, - QObject::tr ("Smoothing factor for current dependence of base and collector transit time"))); - Props.append (new Property ("fthc", "0.0", false, - QObject::tr ("Partitioning factor for base and collector portion"))); - Props.append (new Property ("rci0", "150", false, - QObject::tr ("Internal collector resistance at low electric field") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("vlim", "0.5", false, - QObject::tr ("Voltage separating ohmic and saturation velocity regime") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vces", "0.1", false, - QObject::tr ("Internal C-E saturation voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vpt", "100.0", false, - QObject::tr ("Collector punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("tr", "0.0", false, - QObject::tr ("Storage time for inverse operation") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("cbepar", "0.0", false, - QObject::tr ("Total parasitic B-E capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("cbcpar", "0.0", false, - QObject::tr ("Total parasitic B-C capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("alqf", "0.0", false, - QObject::tr ("Factor for additional delay time of minority charge"))); - Props.append (new Property ("alit", "0.0", false, - QObject::tr ("Factor for additional delay time of transfer current"))); - Props.append (new Property ("flnqs", "0", false, - QObject::tr ("Flag for turning on and off of vertical NQS effect"))); - Props.append (new Property ("kf", "0.0", false, - QObject::tr ("Flicker noise coefficient"))); - Props.append (new Property ("af", "2.0", false, - QObject::tr ("Flicker noise exponent factor"))); - Props.append (new Property ("cfbe", "-1", false, - QObject::tr ("Flag for determining where to tag the flicker noise source"))); - Props.append (new Property ("latb", "0.0", false, - QObject::tr ("Scaling factor for collector minority charge in direction of emitter width"))); - Props.append (new Property ("latl", "0.0", false, - QObject::tr ("Scaling factor for collector minority charge in direction of emitter length"))); - Props.append (new Property ("vgb", "1.17", false, - QObject::tr ("Bandgap voltage extrapolated to 0 K") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("alt0", "0.0", false, - QObject::tr ("First order relative TC of parameter T0") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("kt0", "0.0", false, - QObject::tr ("Second order relative TC of parameter T0"))); - Props.append (new Property ("zetaci", "0.0", false, - QObject::tr ("Temperature exponent for RCI0"))); - Props.append (new Property ("alvs", "0.0", false, - QObject::tr ("Relative TC of saturation drift velocity") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("alces", "0.0", false, - QObject::tr ("Relative TC of VCES") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("zetarbi", "0.0", false, - QObject::tr ("Temperature exponent of internal base resistance"))); - Props.append (new Property ("zetarbx", "0.0", false, - QObject::tr ("Temperature exponent of external base resistance"))); - Props.append (new Property ("zetarcx", "0.0", false, - QObject::tr ("Temperature exponent of external collector resistance"))); - Props.append (new Property ("zetare", "0.0", false, - QObject::tr ("Temperature exponent of emitter resistance"))); - Props.append (new Property ("zetacx", "1.0", false, - QObject::tr ("Temperature exponent of mobility in substrate transistor transit time"))); - Props.append (new Property ("vge", "1.17", false, - QObject::tr ("Effective emitter bandgap voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vgc", "1.17", false, - QObject::tr ("Effective collector bandgap voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vgs", "1.17", false, - QObject::tr ("Effective substrate bandgap voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("f1vg", "-1.02377e-4", false, - QObject::tr ("Coefficient K1 in T-dependent band-gap equation"))); - Props.append (new Property ("f2vg", "4.3215e-4", false, - QObject::tr ("Coefficient K2 in T-dependent band-gap equation"))); - Props.append (new Property ("zetact", "3.0", false, - QObject::tr ("Exponent coefficient in transfer current temperature dependence"))); - Props.append (new Property ("zetabet", "3.5", false, - QObject::tr ("Exponent coefficient in B-E junction current temperature dependence"))); - Props.append (new Property ("alb", "0.0", false, - QObject::tr ("Relative TC of forward current gain for V2.1 model") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("flsh", "0", false, - QObject::tr ("Flag for turning on and off self-heating effect"))); - Props.append (new Property ("rth", "0.0", false, - QObject::tr ("Thermal resistance") - +" ("+QObject::tr ("K/W")+")")); - Props.append (new Property ("cth", "0.0", false, - QObject::tr ("Thermal capacitance") - +" ("+QObject::tr ("J/W")+")")); - Props.append (new Property ("flcomp", "0.0", false, - QObject::tr ("Flag for compatibility with v2.1 model (0=v2.1)"))); - Props.append (new Property ("tnom", "27.0", false, - QObject::tr ("Temperature at which parameters are specified") - +" ("+QObject::tr ("C")+")")); - Props.append (new Property ("dt", "0.0", false, - QObject::tr ("Temperature change w.r.t. chip temperature for particular transistor") - +" ("+QObject::tr ("K")+")")); - Props.append (new Property ("Temp", "27.0", false, - QObject::tr ("simulation temperature"))); - - createSymbol (); - tx = x2 + 4; - ty = y1 + 4; - Model = "hicumL2V2p24"; - Name = "T"; -} - -Component * hicumL2V2p24::newOne() -{ - hicumL2V2p24 * p = new hicumL2V2p24(); - p->Props.getFirst()->Value = Props.getFirst()->Value; - p->recreate(0); - return p; -} - -Element * hicumL2V2p24::info(QString& Name, char * &BitmapFile, bool getNewOne) -{ - Name = QObject::tr("HICUM L2 v2.24"); - BitmapFile = (char *) "npnsub_therm"; - - if(getNewOne) return new hicumL2V2p24(); - return 0; -} - -void hicumL2V2p24::createSymbol() -{ - // normal bipolar - Lines.append(new Line(-10,-15,-10, 15,QPen(Qt::darkBlue,3))); - Lines.append(new Line(-30, 0,-10, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, -5, 0,-15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0,-15, 0,-30,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, 5, 0, 15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 15, 0, 30,QPen(Qt::darkBlue,2))); - - // substrate node - Lines.append(new Line( 9, 0, 30, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 9, -7, 9, 7,QPen(Qt::darkBlue,3))); - - // thermal node - Lines.append(new Line(-30, 20,-20, 20,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-20, 17,-20, 23,QPen(Qt::darkBlue,2))); - - // arrow - Lines.append(new Line( -6, 15, 0, 15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 9, 0, 15,QPen(Qt::darkBlue,2))); - - // H - Lines.append(new Line(-30,-30,-30,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-30,-27,-26,-27,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-26,-30,-26,-24,QPen(Qt::darkBlue,1))); - // I - Lines.append(new Line(-24,-30,-24,-24,QPen(Qt::darkBlue,1))); - // C - Lines.append(new Line(-22,-30,-22,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-22,-30,-19,-30,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-22,-24,-19,-24,QPen(Qt::darkBlue,1))); - // U - Lines.append(new Line(-17,-30,-17,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-14,-30,-14,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-17,-24,-14,-24,QPen(Qt::darkBlue,1))); - // M - Lines.append(new Line(-12,-30,-12,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line( -8,-30, -8,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-12,-30,-10,-28,QPen(Qt::darkBlue,1))); - Lines.append(new Line( -8,-30,-10,-28,QPen(Qt::darkBlue,1))); - - // terminal definitions - Ports.append(new Port( 0,-30)); // collector - Ports.append(new Port(-30, 0)); // base - Ports.append(new Port( 0, 30)); // emitter - Ports.append(new Port( 30, 0)); // substrate - Ports.append(new Port(-30, 20)); // thermal node - - // relative boundings - x1 = -30; y1 = -30; - x2 = 30; y2 = 30; -} diff --git a/qucs/qucs/components/hicumL2V2p24.h b/qucs/qucs/components/hicumL2V2p24.h deleted file mode 100644 index 3117148f7f..0000000000 --- a/qucs/qucs/components/hicumL2V2p24.h +++ /dev/null @@ -1,27 +0,0 @@ -/* - * hicumL2V2p24.h - device definitions for hicumL2V2p24 module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ - -#ifndef hicumL2V2p24_H -#define hicumL2V2p24_H - -#include "component.h" - -class hicumL2V2p24 : public Component -{ - public: - hicumL2V2p24(); - ~hicumL2V2p24() { }; - Component* newOne(); - static Element* info(QString&, char* &, bool getNewOne=false); - protected: - void createSymbol(); -}; - -#endif /* hicumL2V2p24_H */ diff --git a/qucs/qucs/components/hicumL2V2p31n.cpp b/qucs/qucs/components/hicumL2V2p31n.cpp deleted file mode 100644 index 1be80b19e9..0000000000 --- a/qucs/qucs/components/hicumL2V2p31n.cpp +++ /dev/null @@ -1,417 +0,0 @@ -/* - * hicumL2V2p31n.cpp - device implementations for hicumL2V2p31n module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ - -#include "hicumL2V2p31n.h" - -hicumL2V2p31n::hicumL2V2p31n() -{ - Description = QObject::tr ("hicumL2V2p31n verilog device"); - - Props.append (new Property ("c10", "2.0E-30", false, - QObject::tr ("GICCR constant") - +" ("+QObject::tr ("A^2s")+")")); - Props.append (new Property ("qp0", "2.0E-14", false, - QObject::tr ("Zero-bias hole charge") - +" ("+QObject::tr ("Coul")+")")); - Props.append (new Property ("ich", "0.0", false, - QObject::tr ("High-current correction for 2D and 3D effects") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("hf0", "1.0", false, - QObject::tr ("Weight factor for the low current minority charge"))); - Props.append (new Property ("hfe", "1.0", false, - QObject::tr ("Emitter minority charge weighting factor in HBTs"))); - Props.append (new Property ("hfc", "1.0", false, - QObject::tr ("Collector minority charge weighting factor in HBTs"))); - Props.append (new Property ("hjei", "1.0", false, - QObject::tr ("B-E depletion charge weighting factor in HBTs"))); - Props.append (new Property ("ahjei", "0.0", false, - QObject::tr ("Parameter describing the slope of hjEi(VBE)"))); - Props.append (new Property ("rhjei", "1.0", false, - QObject::tr ("Smoothing parameter for hjEi(VBE) at high voltage"))); - Props.append (new Property ("hjci", "1.0", false, - QObject::tr ("B-C depletion charge weighting factor in HBTs"))); - Props.append (new Property ("ibeis", "1.0E-18", false, - QObject::tr ("Internal B-E saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mbei", "1.0", false, - QObject::tr ("Internal B-E current ideality factor"))); - Props.append (new Property ("ireis", "0.0", false, - QObject::tr ("Internal B-E recombination saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mrei", "2.0", false, - QObject::tr ("Internal B-E recombination current ideality factor"))); - Props.append (new Property ("ibeps", "0.0", false, - QObject::tr ("Peripheral B-E saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mbep", "1.0", false, - QObject::tr ("Peripheral B-E current ideality factor"))); - Props.append (new Property ("ireps", "0.0", false, - QObject::tr ("Peripheral B-E recombination saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mrep", "2.0", false, - QObject::tr ("Peripheral B-E recombination current ideality factor"))); - Props.append (new Property ("mcf", "1.0", false, - QObject::tr ("Non-ideality factor for III-V HBTs"))); - Props.append (new Property ("tbhrec", "0.0", false, - QObject::tr ("Base current recombination time constant at B-C barrier for high forward injection") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("ibcis", "1.0E-16", false, - QObject::tr ("Internal B-C saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mbci", "1.0", false, - QObject::tr ("Internal B-C current ideality factor"))); - Props.append (new Property ("ibcxs", "0.0", false, - QObject::tr ("External B-C saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("mbcx", "1.0", false, - QObject::tr ("External B-C current ideality factor"))); - Props.append (new Property ("ibets", "0.0", false, - QObject::tr ("B-E tunneling saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("abet", "40", false, - QObject::tr ("Exponent factor for tunneling current"))); - Props.append (new Property ("tunode", "1", false, - QObject::tr ("Specifies the base node connection for the tunneling current"))); - Props.append (new Property ("favl", "0.0", false, - QObject::tr ("Avalanche current factor") - +" ("+QObject::tr ("1/V")+")")); - Props.append (new Property ("qavl", "0.0", false, - QObject::tr ("Exponent factor for avalanche current") - +" ("+QObject::tr ("Coul")+")")); - Props.append (new Property ("alfav", "0.0", false, - QObject::tr ("Relative TC for FAVL") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("alqav", "0.0", false, - QObject::tr ("Relative TC for QAVL") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("rbi0", "0.0", false, - QObject::tr ("Zero bias internal base resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("rbx", "0.0", false, - QObject::tr ("External base series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("fgeo", "0.6557", false, - QObject::tr ("Factor for geometry dependence of emitter current crowding"))); - Props.append (new Property ("fdqr0", "0.0", false, - QObject::tr ("Correction factor for modulation by B-E and B-C space charge layer"))); - Props.append (new Property ("fcrbi", "0.0", false, - QObject::tr ("Ratio of HF shunt to total internal capacitance (lateral NQS effect)"))); - Props.append (new Property ("fqi", "1.0", false, - QObject::tr ("Ration of internal to total minority charge"))); - Props.append (new Property ("re", "0.0", false, - QObject::tr ("Emitter series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("rcx", "0.0", false, - QObject::tr ("External collector series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("itss", "0.0", false, - QObject::tr ("Substrate transistor transfer saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("msf", "1.0", false, - QObject::tr ("Forward ideality factor of substrate transfer current"))); - Props.append (new Property ("iscs", "0.0", false, - QObject::tr ("C-S diode saturation current") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("msc", "1.0", false, - QObject::tr ("Ideality factor of C-S diode current"))); - Props.append (new Property ("tsf", "0.0", false, - QObject::tr ("Transit time for forward operation of substrate transistor") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("rsu", "0.0", false, - QObject::tr ("Substrate series resistance") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("csu", "0.0", false, - QObject::tr ("Substrate shunt capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("cjei0", "1.0E-20", false, - QObject::tr ("Internal B-E zero-bias depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vdei", "0.9", false, - QObject::tr ("Internal B-E built-in potential") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zei", "0.5", false, - QObject::tr ("Internal B-E grading coefficient"))); - Props.append (new Property ("ajei", "2.5", false, - QObject::tr ("Ratio of maximum to zero-bias value of internal B-E capacitance"))); - Props.append (new Property ("cjep0", "1.0E-20", false, - QObject::tr ("Peripheral B-E zero-bias depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vdep", "0.9", false, - QObject::tr ("Peripheral B-E built-in potential") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zep", "0.5", false, - QObject::tr ("Peripheral B-E grading coefficient"))); - Props.append (new Property ("ajep", "2.5", false, - QObject::tr ("Ratio of maximum to zero-bias value of peripheral B-E capacitance"))); - Props.append (new Property ("cjci0", "1.0E-20", false, - QObject::tr ("Internal B-C zero-bias depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vdci", "0.7", false, - QObject::tr ("Internal B-C built-in potential") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zci", "0.4", false, - QObject::tr ("Internal B-C grading coefficient"))); - Props.append (new Property ("vptci", "100", false, - QObject::tr ("Internal B-C punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("cjcx0", "1.0E-20", false, - QObject::tr ("External B-C zero-bias depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vdcx", "0.7", false, - QObject::tr ("External B-C built-in potential") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zcx", "0.4", false, - QObject::tr ("External B-C grading coefficient"))); - Props.append (new Property ("vptcx", "100", false, - QObject::tr ("External B-C punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("fbcpar", "0.0", false, - QObject::tr ("Partitioning factor of parasitic B-C cap"))); - Props.append (new Property ("fbepar", "1.0", false, - QObject::tr ("Partitioning factor of parasitic B-E cap"))); - Props.append (new Property ("cjs0", "0.0", false, - QObject::tr ("C-S zero-bias depletion capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("vds", "0.6", false, - QObject::tr ("C-S built-in potential") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zs", "0.5", false, - QObject::tr ("C-S grading coefficient"))); - Props.append (new Property ("vpts", "100", false, - QObject::tr ("C-S punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("t0", "0.0", false, - QObject::tr ("Low current forward transit time at VBC=0V") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("dt0h", "0.0", false, - QObject::tr ("Time constant for base and B-C space charge layer width modulation") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("tbvl", "0.0", false, - QObject::tr ("Time constant for modeling carrier jam at low VCE") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("tef0", "0.0", false, - QObject::tr ("Neutral emitter storage time") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("gtfe", "1.0", false, - QObject::tr ("Exponent factor for current dependence of neutral emitter storage time"))); - Props.append (new Property ("thcs", "0.0", false, - QObject::tr ("Saturation time constant at high current densities") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("ahc", "0.1", false, - QObject::tr ("Smoothing factor for current dependence of base and collector transit time"))); - Props.append (new Property ("fthc", "0.0", false, - QObject::tr ("Partitioning factor for base and collector portion"))); - Props.append (new Property ("rci0", "150", false, - QObject::tr ("Internal collector resistance at low electric field") - +" ("+QObject::tr ("Ohm")+")")); - Props.append (new Property ("vlim", "0.5", false, - QObject::tr ("Voltage separating ohmic and saturation velocity regime") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vces", "0.1", false, - QObject::tr ("Internal C-E saturation voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vpt", "100.0", false, - QObject::tr ("Collector punch-through voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("tr", "0.0", false, - QObject::tr ("Storage time for inverse operation") - +" ("+QObject::tr ("s")+")")); - Props.append (new Property ("vcbar", "0.0", false, - QObject::tr ("Barrier voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("icbar", "0.0", false, - QObject::tr ("Normalization parameter") - +" ("+QObject::tr ("A")+")")); - Props.append (new Property ("acbar", "0.01", false, - QObject::tr ("Smoothing parameter for barrier voltage"))); - Props.append (new Property ("delck", "2.0", false, - QObject::tr ("fitting factor for critical current"))); - Props.append (new Property ("cbepar", "0.0", false, - QObject::tr ("Total parasitic B-E capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("cbcpar", "0.0", false, - QObject::tr ("Total parasitic B-C capacitance") - +" ("+QObject::tr ("F")+")")); - Props.append (new Property ("alqf", "0.167", false, - QObject::tr ("Factor for additional delay time of minority charge"))); - Props.append (new Property ("alit", "0.333", false, - QObject::tr ("Factor for additional delay time of transfer current"))); - Props.append (new Property ("flnqs", "0", false, - QObject::tr ("Flag for turning on and off of vertical NQS effect"))); - Props.append (new Property ("kf", "0.0", false, - QObject::tr ("Flicker noise coefficient"))); - Props.append (new Property ("af", "2.0", false, - QObject::tr ("Flicker noise exponent factor"))); - Props.append (new Property ("cfbe", "-1", false, - QObject::tr ("Flag for determining where to tag the flicker noise source"))); - Props.append (new Property ("flcono", "0", false, - QObject::tr ("Flag for turning on and off of correlated noise implementation"))); - Props.append (new Property ("kfre", "0.0", false, - QObject::tr ("Emitter resistance flicker noise coefficient"))); - Props.append (new Property ("afre", "2.0", false, - QObject::tr ("Emitter resistance flicker noise exponent factor"))); - Props.append (new Property ("latb", "0.0", false, - QObject::tr ("Scaling factor for collector minority charge in direction of emitter width"))); - Props.append (new Property ("latl", "0.0", false, - QObject::tr ("Scaling factor for collector minority charge in direction of emitter length"))); - Props.append (new Property ("vgb", "1.17", false, - QObject::tr ("Bandgap voltage extrapolated to 0 K") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("alt0", "0.0", false, - QObject::tr ("First order relative TC of parameter T0") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("kt0", "0.0", false, - QObject::tr ("Second order relative TC of parameter T0"))); - Props.append (new Property ("zetaci", "0.0", false, - QObject::tr ("Temperature exponent for RCI0"))); - Props.append (new Property ("alvs", "0.0", false, - QObject::tr ("Relative TC of saturation drift velocity") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("alces", "0.0", false, - QObject::tr ("Relative TC of VCES") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("zetarbi", "0.0", false, - QObject::tr ("Temperature exponent of internal base resistance"))); - Props.append (new Property ("zetarbx", "0.0", false, - QObject::tr ("Temperature exponent of external base resistance"))); - Props.append (new Property ("zetarcx", "0.0", false, - QObject::tr ("Temperature exponent of external collector resistance"))); - Props.append (new Property ("zetare", "0.0", false, - QObject::tr ("Temperature exponent of emitter resistance"))); - Props.append (new Property ("zetacx", "1.0", false, - QObject::tr ("Temperature exponent of mobility in substrate transistor transit time"))); - Props.append (new Property ("vge", "1.17", false, - QObject::tr ("Effective emitter bandgap voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vgc", "1.17", false, - QObject::tr ("Effective collector bandgap voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("vgs", "1.17", false, - QObject::tr ("Effective substrate bandgap voltage") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("f1vg", "-1.02377e-4", false, - QObject::tr ("Coefficient K1 in T-dependent band-gap equation"))); - Props.append (new Property ("f2vg", "4.3215e-4", false, - QObject::tr ("Coefficient K2 in T-dependent band-gap equation"))); - Props.append (new Property ("zetact", "3.0", false, - QObject::tr ("Exponent coefficient in transfer current temperature dependence"))); - Props.append (new Property ("zetabet", "3.5", false, - QObject::tr ("Exponent coefficient in B-E junction current temperature dependence"))); - Props.append (new Property ("alb", "0.0", false, - QObject::tr ("Relative TC of forward current gain for V2.1 model") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("dvgbe", "0", false, - QObject::tr ("Bandgap difference between B and B-E junction used for hjEi0 and hf0") - +" ("+QObject::tr ("V")+")")); - Props.append (new Property ("zetahjei", "1", false, - QObject::tr ("Temperature coefficient for ahjEi"))); - Props.append (new Property ("zetavgbe", "1", false, - QObject::tr ("Temperature coefficient for hjEi0"))); - Props.append (new Property ("flsh", "0", false, - QObject::tr ("Flag for turning on and off self-heating effect"))); - Props.append (new Property ("rth", "0.0", false, - QObject::tr ("Thermal resistance") - +" ("+QObject::tr ("K/W")+")")); - Props.append (new Property ("zetarth", "0.0", false, - QObject::tr ("Temperature coefficient for Rth"))); - Props.append (new Property ("alrth", "0.0", false, - QObject::tr ("First order relative TC of parameter Rth") - +" ("+QObject::tr ("1/K")+")")); - Props.append (new Property ("cth", "0.0", false, - QObject::tr ("Thermal capacitance") - +" ("+QObject::tr ("J/W")+")")); - Props.append (new Property ("flcomp", "0.0", false, - QObject::tr ("Flag for compatibility with v2.1 model (0=v2.1)"))); - Props.append (new Property ("tnom", "27.0", false, - QObject::tr ("Temperature at which parameters are specified") - +" ("+QObject::tr ("C")+")")); - Props.append (new Property ("dt", "0.0", false, - QObject::tr ("Temperature change w.r.t. chip temperature for particular transistor") - +" ("+QObject::tr ("K")+")")); - Props.append (new Property ("Temp", "27.0", false, - QObject::tr ("simulation temperature"))); - - createSymbol (); - tx = x2 + 4; - ty = y1 + 4; - Model = "hicumL2V2p31n"; - Name = "T"; -} - -Component * hicumL2V2p31n::newOne() -{ - hicumL2V2p31n * p = new hicumL2V2p31n(); - p->Props.getFirst()->Value = Props.getFirst()->Value; - p->recreate(0); - return p; -} - -Element * hicumL2V2p31n::info(QString& Name, char * &BitmapFile, bool getNewOne) -{ - Name = QObject::tr("HICUM L2 V2.31"); - BitmapFile = (char *) "hicumL2V2p31n"; - - if(getNewOne) return new hicumL2V2p31n(); - return 0; -} - -void hicumL2V2p31n::createSymbol() -{ - // normal bipolar - Lines.append(new Line(-10,-15,-10, 15,QPen(Qt::darkBlue,3))); - Lines.append(new Line(-30, 0,-10, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, -5, 0,-15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0,-15, 0,-30,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-10, 5, 0, 15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 15, 0, 30,QPen(Qt::darkBlue,2))); - - // substrate node - Lines.append(new Line( 9, 0, 30, 0,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 9, -7, 9, 7,QPen(Qt::darkBlue,3))); - - // thermal node - Lines.append(new Line(-30, 20,-20, 20,QPen(Qt::darkBlue,2))); - Lines.append(new Line(-20, 17,-20, 23,QPen(Qt::darkBlue,2))); - - // arrow - Lines.append(new Line( -6, 15, 0, 15,QPen(Qt::darkBlue,2))); - Lines.append(new Line( 0, 9, 0, 15,QPen(Qt::darkBlue,2))); - - // H - Lines.append(new Line(-30,-30,-30,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-30,-27,-26,-27,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-26,-30,-26,-24,QPen(Qt::darkBlue,1))); - // I - Lines.append(new Line(-24,-30,-24,-24,QPen(Qt::darkBlue,1))); - // C - Lines.append(new Line(-22,-30,-22,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-22,-30,-19,-30,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-22,-24,-19,-24,QPen(Qt::darkBlue,1))); - // U - Lines.append(new Line(-17,-30,-17,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-14,-30,-14,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-17,-24,-14,-24,QPen(Qt::darkBlue,1))); - // M - Lines.append(new Line(-12,-30,-12,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line( -8,-30, -8,-24,QPen(Qt::darkBlue,1))); - Lines.append(new Line(-12,-30,-10,-28,QPen(Qt::darkBlue,1))); - Lines.append(new Line( -8,-30,-10,-28,QPen(Qt::darkBlue,1))); - - // terminal definitions - Ports.append(new Port( 0,-30)); // collector - Ports.append(new Port(-30, 0)); // base - Ports.append(new Port( 0, 30)); // emitter - Ports.append(new Port( 30, 0)); // substrate - Ports.append(new Port(-30, 20)); // thermal node - - // relative boundings - x1 = -30; y1 = -30; - x2 = 30; y2 = 30; -} diff --git a/qucs/qucs/components/hicumL2V2p31n.h b/qucs/qucs/components/hicumL2V2p31n.h deleted file mode 100644 index f4806a6aff..0000000000 --- a/qucs/qucs/components/hicumL2V2p31n.h +++ /dev/null @@ -1,27 +0,0 @@ -/* - * hicumL2V2p31n.h - device definitions for hicumL2V2p31n module - * - * This is free software; you can redistribute it and/or modify - * it under the terms of the GNU General Public License as published by - * the Free Software Foundation; either version 2, or (at your option) - * any later version. - * - */ - -#ifndef hicumL2V2p31n_H -#define hicumL2V2p31n_H - -#include "component.h" - -class hicumL2V2p31n : public Component -{ - public: - hicumL2V2p31n(); - ~hicumL2V2p31n() { }; - Component* newOne(); - static Element* info(QString&, char* &, bool getNewOne=false); - protected: - void createSymbol(); -}; - -#endif /* hicumL2V2p31n_H */ diff --git a/qucs/qucs/module.cpp b/qucs/qucs/module.cpp index a7d5a87045..522bed500b 100644 --- a/qucs/qucs/module.cpp +++ b/qucs/qucs/module.cpp @@ -324,25 +324,11 @@ void Module::registerModules (void) { REGISTER_NONLINEAR_1 (TunnelDiode); // verilog-a devices - REGISTER_VERILOGA_1 (hicumL2V2p1); - REGISTER_VERILOGA_1 (HBT_X); REGISTER_VERILOGA_1 (mod_amp); - REGISTER_VERILOGA_1 (hic2_full); REGISTER_VERILOGA_1 (log_amp); - REGISTER_VERILOGA_2 (hic0_full, info, info_pnp); REGISTER_VERILOGA_1 (potentiometer); REGISTER_VERILOGA_1 (MESFET); REGISTER_VERILOGA_2 (EKV26MOS, info, info_pmos); - REGISTER_VERILOGA_1 (bsim3v34nMOS); - REGISTER_VERILOGA_1 (bsim3v34pMOS); - REGISTER_VERILOGA_1 (bsim4v30nMOS); - REGISTER_VERILOGA_1 (bsim4v30pMOS); - REGISTER_VERILOGA_2 (hicumL0V1p2, info, info_pnp); - REGISTER_VERILOGA_2 (hicumL0V1p2g, info, info_pnp); - REGISTER_VERILOGA_2 (hicumL0V1p3, info, info_pnp); - REGISTER_VERILOGA_1 (hicumL2V2p23); - REGISTER_VERILOGA_1 (hicumL2V2p24); - REGISTER_VERILOGA_1 (hicumL2V2p31n); REGISTER_VERILOGA_1 (photodiode); REGISTER_VERILOGA_1 (phototransistor); REGISTER_VERILOGA_1 (nigbt); diff --git a/qucs/qucs/qucs.qrc b/qucs/qucs/qucs.qrc index 33e2226cdd..7661ff447a 100644 --- a/qucs/qucs/qucs.qrc +++ b/qucs/qucs/qucs.qrc @@ -18,10 +18,6 @@ bitmaps/binarytogrey4bit.png bitmaps/bondwire.png bitmaps/bottom.png - bitmaps/bsim3v34nMOS.png - bitmaps/bsim3v34pMOS.png - bitmaps/bsim4v30nMOS.png - bitmaps/bsim4v30pMOS.png bitmaps/buffer.png bitmaps/capacitor.png bitmaps/cccs.png @@ -87,7 +83,6 @@ bitmaps/gyrator.png bitmaps/ha1b.png bitmaps/hb.png - bitmaps/hicumL2V2p31n.png bitmaps/home.png bitmaps/hpribin4bit.png bitmaps/hybrid.png From f9a054f8c5775f9bdd25e795ef9b09f5df944935 Mon Sep 17 00:00:00 2001 From: Guilherme Brondani Torri Date: Thu, 28 Jan 2016 20:58:50 +0100 Subject: [PATCH 2/4] Skip tests of removed models. --- Makefile.am | 12 ++++++------ 1 file changed, 6 insertions(+), 6 deletions(-) diff --git a/Makefile.am b/Makefile.am index d09efa0fa4..24e6c0f5a5 100644 --- a/Makefile.am +++ b/Makefile.am @@ -57,16 +57,16 @@ QUCSTEST_ENV = export PATH=$(MORE_PATH):$(PATH); \ export QUCS_LIBDIR=$(abs_top_srcdir)/qucs/qucs-lib/library; \ export QUCSATOR=qucsator; -# Run tests for Qucs (GUI) +if COND_MACOSX +macossuffix=_OSX +endif + +# Run tests for Qucs (GUI) # Schematic to Netlist conversion require QucsConv and Qucs component library, # so use the prefix of the installed package. qucscheck: $(PWD)/qucs-test $(QUCSTEST_ENV) \ - cd qucs-test && python run.py --qucs - -if COND_MACOSX -macossuffix=_OSX -endif + cd qucs-test && python run.py --qucs --exclude skip$(macossuffix).txt # Run test on qucsator qucsatorcheck: $(PWD)/qucs-test From 4f1af42add58bdad4af507b03fa2ab27cdaa4e72 Mon Sep 17 00:00:00 2001 From: Guilherme Brondani Torri Date: Mon, 1 Feb 2016 22:23:00 +0100 Subject: [PATCH 3/4] lupdate language files. Remove obsolete strings. --- qucs/translations/qucs_ar.ts | 6789 ++++++------------------------ qucs/translations/qucs_ca.ts | 6599 +++++------------------------ qucs/translations/qucs_cs.ts | 6621 +++++------------------------ qucs/translations/qucs_de.ts | 6484 +++++------------------------ qucs/translations/qucs_en.ts | 6292 +++++----------------------- qucs/translations/qucs_es.ts | 6759 ++++++------------------------ qucs/translations/qucs_fr.ts | 6692 +++++------------------------- qucs/translations/qucs_he.ts | 6398 +++++----------------------- qucs/translations/qucs_hu.ts | 6547 +++++------------------------ qucs/translations/qucs_it.ts | 6690 +++++------------------------- qucs/translations/qucs_ja.ts | 6531 +++++------------------------ qucs/translations/qucs_kk.ts | 6811 ++++++------------------------ qucs/translations/qucs_pl.ts | 6624 +++++------------------------ qucs/translations/qucs_pt_BR.ts | 6698 +++++------------------------- qucs/translations/qucs_pt_PT.ts | 6468 +++++------------------------ qucs/translations/qucs_ro.ts | 6394 +++++----------------------- qucs/translations/qucs_ru.ts | 6885 ++++++------------------------- qucs/translations/qucs_sv.ts | 6564 +++++------------------------ qucs/translations/qucs_tr.ts | 6758 ++++++------------------------ qucs/translations/qucs_uk.ts | 6688 +++++------------------------- qucs/translations/qucs_zh_CN.ts | 6298 +++++----------------------- 21 files changed, 23240 insertions(+), 115350 deletions(-) diff --git a/qucs/translations/qucs_ar.ts b/qucs/translations/qucs_ar.ts index 2c8396a504..14347b4e98 100644 --- a/qucs/translations/qucs_ar.ts +++ b/qucs/translations/qucs_ar.ts @@ -3527,62 +3527,6 @@ Resistor color code computation program - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - @@ -3738,10 +3682,6 @@ Resistor color code computation program - - - - polarity @@ -3946,10 +3886,6 @@ Resistor color code computation program - - - - @@ -4090,5709 +4026,1480 @@ Resistor color code computation program وصلة السلك - - bsim3v34nMOS verilog device - + + + + + + + + + + + simulation temperature + محاكاة الحرارة + + + + capacitor + مكثف + capacitance in Farad + مواسعة في الفاراد + + + initial voltage for transient simulation + لجهد الأولي لمحاكاة عابرة + + + + + + + + schematic symbol + الرمز التخطيطي + + + + Capacitor + مكثف + + + + current controlled current source + تسيطر المنبع الحالي + + + + + + forward transfer factor + نقل العامل الى الامام + + + + + + + + + + + + + + + delay time + تأخر الوقت + + + + Current Controlled Current Source + تسيطر المنبع الحالي + + + + current controlled voltage source + تسيطر منبع الفولتاج + + + + Current Controlled Voltage Source + تسيطر منبع الفولتاج + + + + circulator + شكل دائري + + + + reference impedance of port 1 + إشارة المقاومة لمنفذ 1 + + + reference impedance of port 2 + إشارة المقاومة لمنفذ 2 + + + reference impedance of port 3 + إشارة المقاومة لمنفذ 3 + + + + Circulator + شكل دائري + + + + coaxial transmission line + خط الإرسال كواكسيال + + + + + relative permittivity of dielectric + النفاذية النسبية للعازل كهربائي + + + + + specific resistance of conductor + المقاومة المحددة للموصل + + + + + relative permeability of conductor + النفاذية النسبية للموصل + + + inner diameter of shield + القطر الداخلي للواقي + + + diameter of inner conductor + قطر الموصل الداخلي + + + + mechanical length of the line + الطول المكانيكي للخط + + + + + + loss tangent + فقدان الظل + + + + Coaxial Line + متحد المحور الخط + + + + 1bit comparator verilog device + + + + + 1Bit Comparator + + + + + 2bit comparator verilog device + + + + + 2Bit Comparator + + + + + 4bit comparator verilog device + + + + + 4Bit Comparator + + + + + number of input ports + عدد منافذ الدخول + + - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - simulation temperature - محاكاة الحرارة - - - - bsim3v34nMOS - - - - - bsim3v34pMOS verilog device - - - - - bsim3v34pMOS - - - - - bsim4v30nMOS verilog device - - - - - bsim4v30nMOS - - - - - bsim4v30pMOS verilog device - - - - - bsim4v30pMOS - - - - - capacitor - مكثف - - - - capacitance in Farad - مواسعة في الفاراد - - - - initial voltage for transient simulation - لجهد الأولي لمحاكاة عابرة - - - - - - - - - schematic symbol - الرمز التخطيطي - - - - Capacitor - مكثف - - - - current controlled current source - تسيطر المنبع الحالي - - - - - - forward transfer factor - نقل العامل الى الامام - - - - - - - - - - - - - - - delay time - تأخر الوقت - - - - Current Controlled Current Source - تسيطر المنبع الحالي - - - - current controlled voltage source - تسيطر منبع الفولتاج - - - - Current Controlled Voltage Source - تسيطر منبع الفولتاج - - - - circulator - شكل دائري - - - - reference impedance of port 1 - إشارة المقاومة لمنفذ 1 - - - - reference impedance of port 2 - إشارة المقاومة لمنفذ 2 - - - - reference impedance of port 3 - إشارة المقاومة لمنفذ 3 - - - - Circulator - شكل دائري - - - - coaxial transmission line - خط الإرسال كواكسيال - - - - - relative permittivity of dielectric - النفاذية النسبية للعازل كهربائي - - - - - - specific resistance of conductor - المقاومة المحددة للموصل - - - - - - relative permeability of conductor - النفاذية النسبية للموصل - - - - inner diameter of shield - القطر الداخلي للواقي - - - - diameter of inner conductor - قطر الموصل الداخلي - - - - - mechanical length of the line - الطول المكانيكي للخط - - - - - - - loss tangent - فقدان الظل - - - - Coaxial Line - متحد المحور الخط - - - - 1bit comparator verilog device - - - - - 1Bit Comparator - - - - - 2bit comparator verilog device - - - - - 2Bit Comparator - - - - - 4bit comparator verilog device - - - - - 4Bit Comparator - - - - - number of input ports - عدد منافذ الدخول - - - - - - - voltage of high level - المستوى العالي للفولتاج - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Error - خطأ - - - - Format Error: -Wrong line start! - خطأ في الشكل : -خطأ في خط البداية' ! - - - - Format Error: -Unknown component! -%1 - -Do you make use of loadable components? - - - - - Format Error: -Wrong 'component' line format! - خطأ في الشكل : -خطأ في العنصر شكل الخط! - - - - coplanar line - خط متحد المستوى - - - - - - - - - - - - - - name of substrate definition - تعريف اسم المادة - - - - - - - - - - - width of the line - عرض الخط - - - - - - - width of a gap - عرض الفجوة - - - - - - - length of the line - طول الخط - - - - - - - material at the backside of the substrate - لوازم في تأخر المادة - - - - use approximation instead of precise equation - استخدام التقريب بدلا من المعادلة الدقيقة - - - - Coplanar Line - خط متحد المستوى - - - - ideal coupler - الرابط المثالي - - - - coupling factor - عامل الربط - - - - phase shift of coupling path in degree - مرحلة تحول في مسار درجة اقتران - - - - Coupler - الرابط - - - - coplanar gap - متحد المستوى الفجوة - - - - width of gap between the two lines - عرض الفجوة بين خطين - - - - Coplanar Gap - متحد المستوى الفجوة - - - - coplanar open - متحد المستوى المفتوح - - - - width of gap at end of line - عرض الفجوةفي نهاية الخط - - - - Coplanar Open - متحد المستوى المفتوح - - - - coplanar short - متحد المستوى صغير - - - - Coplanar Short - متحد المستوى صغير - - - - coplanar step - خطوة متحد المستوى - - - - - - width of line 1 - عرض الخط 1 - - - - - - width of line 2 - عرض الخط 2 - - - - distance between ground planes - المسافة بين سطح المستويات - - - - Coplanar Step - خطوة متحد المستوى - - - - coupled transmission lines - - - - - characteristic impedance of even mode - - - - - characteristic impedance of odd mode - - - - - - - - electrical length of the line - الطول الكهربائى للخط - - - - relative dielectric constant of even mode - - - - - relative dielectric constant of odd mode - - - - - attenuation factor per length of even mode - - - - - attenuation factor per length of odd mode - - - - - Coupled Transmission Line - - - - - D flip flop with asynchron reset - D flip flop with asynchron reset - - - - D-FlipFlop - D-FlipFlop - - - - - dc simulation - محاكاة نقطة التشغيل - - - - - - - relative tolerance for convergence - التسامح النسبي للتلاقي - - - - - - - absolute tolerance for currents - التسامح المطلق لتيارات - - - - - - - absolute tolerance for voltages - التسامح المطلق لالفولتية - - - - put operating points into dataset - وضع التشغيل إلى نقاط البيانات - - - - - - - maximum number of iterations until error - الحد الأقصى لعدد التكرار حتى الخطأ - - - - save subcircuit nodes into dataset - حفظ عقد سوب سركوي في البيانات - - - - preferred convergence algorithm - خوارزمية التقارب المفضلة - - - - - - method for solving the circuit matrix - الطريقة حل مصفوفة الدارة - - - - dc block - فك - - - - dc Block - فك - - - - dc feed - وصول مستمر - - - - dc Feed - وصول مستمر - - - - D flip flop with set and reset verilog device - - - - - - - - cross coupled gate transfer function high scaling factor - - - - - - - - cross coupled gate transfer function low scaling factor - - - - - - - - cross coupled gate delay - - - - - D-FlipFlop w/ SR - - - - - diac (bidirectional trigger diode) - diac (bidirectional trigger diode) - - - - - (bidirectional) breakover voltage - (ثنائي الاتجاه) جهد breakover - - - - (bidirectional) breakover current - (ثنائي الاتجاه) breakover الحالي - - - - - - parasitic capacitance - سعة المكثف تشويش - - - - - - - - emission coefficient - معامل الانبعاث - - - - - - intrinsic junction resistance - مفرق المقاومة الجوهرية - - - - Diac - Diac - - - - - digital simulation - المحاكاة الرقمية - - - - type of simulation - نوع المحاكات - - - - duration of TimeList simulation - TimeList مدة المحاكاة - - - - netlist format - شكل netlist - - - - - digital source - مصدر الرقمية - - - - - number of the port - عدد المنفذ - - - - initial output value - قيمة الانتاج الأولي - - - - list of times for changing output value - قائمة مرات لتغيير قيمة الانتاج - - - - diode - صمام ثنائي - - - - - - zero-bias junction capacitance - قدرة ملتقى التحيز عند مستوى الصفر - - - - - - - - grading coefficient - درجات المعامل - - - - - - - junction potential - تقاطع الجهد - - - - linear capacitance - سعة المكثف الخطي - - - - recombination current parameter - إعادة الخاصية الحالية - - - - emission coefficient for Isr - معامل الانبعاث لIsr - - - - ohmic series resistance - ohmicسلسلة المقاومة - - - - - - transit time - زمن العبور - - - - high-injection knee current (0=infinity) - high-injection knee current (0=infinity) - - - - - - reverse breakdown voltage - عكس انهيار الجهد - - - - - - current at reverse breakdown voltage - عكس اتجاه الانهيار الحالي في الجهد - - - - Bv linear temperature coefficient - Bvالمعامل الخطي لدرجة الحرارة - - - - Rs linear temperature coefficient - Rs المعامل الخطي لدرجة الحرارة - - - - Tt linear temperature coefficient - Tt المعامل الخطي لدرجة الحرارة - - - - Tt quadratic temperature coefficient - التربيعية معامل لدرجة الحرارة Tt - - - - M linear temperature coefficient - M المعامل الخطي لدرجة الحرارة - - - - M quadratic temperature coefficient - لتربيعية معامل لدرجة الحرارة M - - - - - default area for diode - المنطقة الافتراضية للصمام الثنائي - - - - Diode - صمام ثنائي - - - - data voltage level shifter (digital to analogue) verilog device - - - - - - voltage level - - - - - - time delay - - - - - D2A Level Shifter - - - - - data voltage level shifter (analogue to digital) verilog device - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - V - V - - - - A2D Level Shifter - - - - - 2to4 demultiplexer verilog device - - - - - 2to4 Demux - - - - - 3to8 demultiplexer verilog device - - - - - 3to8 Demux - - - - - 4to16 demultiplexer verilog device - - - - - 4to16 Demux - - - - - externally controlled voltage source - - - - - - voltage in Volts - الفولتاج بالفولت - - - - Externally Controlled Voltage Source - - - - - EPFL-EKV MOS 2.6 verilog device - أجهزة فيريلوج EPFL-EKV MOS 2.6 - - - - long = 1, short = 2 - long = 1, short = 2 - - - - length parameter - طول المعلم - - - - - - - - - - - - m - m - - - - Width parameter - عرض المعلم - - - - parallel multiple device number - عدد الأجهزة الموازية المتعددة - - - - series multiple device number - سلسلة رقم الجهاز متعددة - - - - gate oxide capacitance per unit area - بوابة أكسيد سعة المكثف في وحدة المساحة - - - - F/m**2 - F/m**2 - - - - metallurgical junction depth - تقاطع عمق المعدنية - - - - channel width correction - عرض قناة التصحيح - - - - channel length correction - طول قناة التصحيح - - - - long channel threshold voltage - طول قناة عتبة الجهد - - - - body effect parameter - هيئة أثر المعلم - - - - V**(1/2) - V**(1/2) - - - - bulk Fermi potential - الجزء الأكبر المحتملة فيرمي - - - - - - transconductance parameter - transconductance معلم - - - - - A/V**2 - A/V**2 - - - - mobility reduction coefficient - التحرك معامل للحد - - - - - - - - - - - - 1/V - التحرك - - - - mobility coefficient - معامل الإنتشار - - - - - - V/m - V/m - - - - - longitudinal critical field - طول الحقل الرئيسي - - - - depletion length coefficient - نفاد طول المعامل - - - - narrow-channel effect coefficient - معامل تأثير القنوات الضيقة - - - - reverse short channel charge density - كثافة تهمة القناة قصيرة عكسية - - - - A*s/m**2 - كثافة تهمة القناة قصيرة عكسية - - - - characteristic length - خصائص الطول - - - - threshold voltage temperature coefficient - معامل درجة حرارة عتبة الجهد - - - - - - - - - - - - V/K - V/K - - - - mobility temperature coefficient - معامل إنتشار الحرارة - - - - Longitudinal critical field temperature exponent - درجة الحرارة الحرجة طولية مجال الأس - - - - Ibb temperature coefficient - معامل درجة الحرارةIbb - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1/K - 1/K - - - - heavily doped diffusion length - قوة مخدر طول النشر - - - - drain/source diffusion sheet resistance - استنزاف / المصدر نشر ورقة المقاومة - - - - Ohm/square - الأوم / مربع - - - - source contact resistance - مصدر الاتصال المقاومة - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Ohm - Ω - - - - drain contact resistance - استنزاف مقاومة الاتصال - - - - gate to source overlap capacitance - بوابة لمصدر التداخل لسعة المكيف - - - - - - - F/m - F/m - - - - gate to drain overlap capacitance - بوابة لمصدر التداخل لسعة المكثف - - - - gate to bulk overlap capacitance - بوابة لمعظم التداخل لسعة المكثف - - - - first impact ionization coefficient - أول أثر معامل التأين - - - - 1/m - 1/m - - - - second impact ionization coefficient - الأثر الثاني لمعامل التأين - - - - saturation voltage factor for impact ionization - عامل الشبع الجهد على تأثير التأين - - - - area related theshold voltage mismatch parameter - منطقة ذات الصلة بعتبة عدم التوافق معلم الفولتاج - - - - V*m - V*m - - - - area related gain mismatch parameter - منطقة ذات الصلة الحصول على معلم عدم التوافق - - - - area related body effect mismatch parameter - منطقة ذات الصلة تأثير عدم التوافق المعلم - - - - sqrt(V)*m - sqrt(V)*m - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A - A - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - F - F - - - - - diode relative area - منطقة الصمام الثنائي النسبية - - - - charge partition parameter - شحن معلم التقسيم - - - - - - - - - - parameter measurement temperature - وسيط لقياس درجة الحرارة - - - - - - - - - - Celsius - مئوية - - - - EPFL-EKV NMOS 2.6 - EPFL-EKV NMOS 2.6 - - - - EPFL-EKV PMOS 2.6 - EPFL-EKV PMOS 2.6 - - - - equation defined device - جهاز تحديد المعادلة - - - - type of equations - نوع المعادلة - - - - number of branches - عدد الفروع - - - - - current equation - المعادلة الحالية - - - - - charge equation - شحن المعادلة - - - - Equation Defined Device - جهاز تحديد المعادلة - - - - equation - المعادلة - - - - - - Equation - المعادلة - - - - put result into dataset - وضع نتيجة في جدول البيانات - - - - externally driven transient simulation - - - - - - integration method - الطريقة الإندماجية - - - - - order of integration method - ترتيب الطريقة الإندماجية - - - - - initial step size in seconds - حجم الخطوة أولية بالثواني - - - - - minimum step size in seconds - حجم الخطوة الأدنى بالثواني - - - - - relative tolerance of local truncation error - خطأ قي التسامح النسبي للبتر المحلي - - - - - absolute tolerance of local truncation error - خطأ قي التسامح المطلق للبتر المحلي - - - - - overestimation of local truncation error - خطأ قي التسامح المبالغ للبتر المحلي - - - - - relax time step raster - مرحلة إسترخاء خطوط المسح - - - - - perform an initial DC analysis - تؤدي الحساب الأولي لمرحلة التشغيل - - - - - maximum step size in seconds - حجم الخطوة بثواني - - - - External transient simulation - - - - - 1bit full adder verilog device - - - - - 1Bit FullAdder - - - - - 2bit full adder verilog device - - - - - 2Bit FullAdder - - - - - gated D latch verilog device - - - - - Gated D-Latch - - - - - 4bit Gray to binary converter verilog device - - - - - 4Bit Gray2Bin - - - - - ground (reference potential) - السطح (إشارة مختلفة)ـ - - - - Ground - السطح - - - - gyrator (impedance inverter) - مَلْفُوف(مقاومة العاكس)ـ - - - - gyrator ratio - نسبة الملفوف - - - - Gyrator - الملفوف - - - - 1bit half adder verilog device - - - - - 1Bit HalfAdder - - - - - Harmonic balance simulation - محاكاة توازن المتناسق - - - - number of harmonics - عدد التوافقيات - - - - Harmonic balance - توازن متناسق - - - - HBT model by Ferdinand-Braun-Institut (FBH), Berlin - HBT model by Ferdinand-Braun-Institut (FBH), Berlin - - - - - - - Ignored - تَجَاهَلَ - - - - Device operating temperature, Celsius - جهاز التشغيل في درجات الحرارة ، درجة مئوية - - - - Thermal resistance, K/W - K/W , المقاومة الحرارية - - - - - - - - - - - - - Thermal capacitance - سعة حرارية - - - - Scaling factor, number of emitter fingers - - - - - Length of emitter finger, m - ,mطول اصبع الباعث - - - - Width of emitter finger, m - ,mعرض اصبع الباعث - - - - Forward saturation current density, A/um^2 - ,A/um^2تشبع أمامي للكثافة الحالية - - - - Forward current emission coefficient - تقدم معامل الانبعاثات الحالي - - - - Forward thermal activation energy, V, (0 == disables temperature dependence) - الطاقة الحرارية بصورة مباشرة النشاط ,V,(0== عَطَّلَ الإعتماد درجة حرارة) - - - - B-E leakage saturation current density, A/um^2 - التشبع عتبة كثافة التسرب الحاليB-E (A.µm⁻²) - - - - B-E leakage emission coefficient - معامل تسرب الانبعاثات B-E - - - - Limiting resistor of B-E leakage diode, Ohm - حد المقاومة من التسربB-E الصمام الثنائي ، الأوم - - - - B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - B-E نفعيل تسرب الطاقة الحرارية ل,V,(0== عَطَّلَ الإعتماد درجة حرارة) - - - - 2nd B-E leakage saturation current density, A/um^2 - التشبع الثاني عتبة كثافة التسرب الحاليB-E (A.µm⁻²) - - - - 2nd B-E leakage emission coefficient - معامل الثاني لتسرب الانبعاثات B-E - - - - 2nd Limiting resistor of B-E leakage diode, Ohm - حد المقاومة الثاني من التسربB-E الصمام الثنائي ، الأوم - - - - 2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - B-E النفعيل الثاني تسرب الطاقة الحرارية ,V,(0== عَطَّلَ الإعتماد درجة حرارة) - - - - Reverse saturation current density, A/um^2 - ,A/um^2إنعكاس للكثافة الحالية - - - - Reverse current emission coefficient - إنعكاس معامل الانبعاثات الحالي - - - - Reverse thermal activation energy, V, (0 == disables temperature dependence) - إنعكاس تفعيل الطاقة الحرارية ,V,(0== عَطَّلَ الإعتماد درجة حرارة) - - - - Fraction of Cjc that goes to internal base node - جزء من س ج س الداخلي الذي يذهب الى قاعدة العقدة - - - - B-C leakage saturation current density, A/um^2 (0. switches off diode) - التشبع عتبة كثافة التسرب الحاليB-C ,A/µm⁻² (0.تطفئ الصمام الثنائي) - - - - B-C leakage emission coefficient (0. switches off diode) - معامل تسرب الانبعاثات B-E (0.تطفئ الصمام الثنائي) - - - - Limiting resistor of B-C leakage diode, Ohm - حد المقاومة من التسربB-C الصمام الثنائي ، الأوم - - - - B-C leakage thermal activation energy, V, (0 == disables temperature dependence) - B-C نفعيل تسرب الطاقة الحرارية ل,V,(0== عَطَّلَ الإعتماد درجة حرارة) - - - - Ideal forward beta - بيتا مثاليا للمضي قدما - - - - Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence) - ,K-/1,معامل درجة الحرارة للربح الحالي (0== عَطَّلَ الإعتماد درجة حرارة) - - - - Ideal reverse beta - بيتا عكس المثل - - - - Forward Early voltage, V, (0 == disables Early Effect) - تقدم مبكر للفولتاج , V,(0== عطل مبكر للأثر) - - - - Reverse Early voltage, V, (0 == disables Early Effect) - تأخر مبكر للفولتاج , V,(0== عطل مبكر للأثر) - - - - Forward high-injection knee current, A, (0 == disables Webster Effect) - ,أ, (0==لايوجد أثر ل وابستر) العتبة الحالية قوية الحقن المباشر - - - - Reverse high-injection knee current, A, (0 == disables Webster Effect) - العتبة الحالية حقن عكسية قويةأ, (0==لايوجد أثر ل وابستر) - - - - C-E breakdown exponent, (0 == disables collector break-down) - C-E breakdown exponent, (0 == disables collector break-down) - - - - C-E breakdown voltage, V, (0 == disables collector break-down) - C-E breakdown voltage, V, (0 == disables collector break-down) - - - - C-E breakdown factor, (0 == disables collector break-down) - C-E breakdown factor, (0 == disables collector break-down) - - - - B-E breakdown voltage, V, (0 == disables emitter break-down) - B-E breakdown voltage, V, (0 == disables emitter break-down) - - - - Ideal reverse transit time, s - ,س الإنعكاس المثالي لوقت العبور - - - - Extrinsic BC diffusion capacitance, F - القوة الخارجية للنشرBC - - - - Ideal forward transit time, s - ,س التقدم المثالي لوقت العبور - - - - Temperature coefficient of forward transit time - درجة الحرارة معامل وقت عبور إلى الأمام - - - - Excess transit time coefficient at base push-out - فائض في وقت العبور معامل قاعدة دفع بها - - - - Smoothing parameter for Thcs - تمهيد لمعلمة Thcs - - - - B-E zero-bias depletion capacitance, F/um^2 - B-E zero-bias depletion capacitance, F/um^2 - - - - B-E junction exponential factor - B-Eتقاطع العامل الأسي - - - - B-E junction built-in potential, V - B-Eتقاطع المحتملة في البناءl, V - - - - B-C zero-bias depletion capacitance, F/um^2 - B-C zero-bias depletion capacitance, F/um^2 - - - - B-C junction exponential factor - B-C عامل مفرق الأسي - - - - B-C junction built-in potential, V - B-Cتقاطع المحتملة في البناءl, V - - - - not used - لا تستخدم - - - - Minimum B-C depletion capacitance (Vbc dependence), F/um^2 - Minimum B-C depletion capacitance (Vbc dependence), F/um^2 - - - - Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction) - Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction) - - - - Fraction of Cmin, lower limit of BC capacitance (Ic dependence) - Fraction of Cmin, lower limit of BC capacitance (Ic dependence) - - - - Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out) - Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out) - - - - Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out) - Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out) - - - - Slope of Jk at high currents , Ohm*um^2 - Slope of Jk at high currents , Ohm*um^2 - - - - Voltage shift of base push-out onset, V - Voltage shift of base push-out onset, V - - - - Collector resistance, Ohm/finger - جمع المقاومة الأوم / المؤشر - - - - Emitter resistance, Ohm/finger - باعث المقاومة الأوم / المؤشر - - - - Extrinsic base resistance, Ohm/finger - قاعدة المقاومة خارجي ، الأوم / المؤشر - - - - Inner Base ohmic resistance, Ohm/finger - قاعدة أوم المقاومة الداخلية ، الأوم / المؤشر - - - - Collector inductance, H - H, محاثة المجمع - - - - Emitter inductance, H - H,محاثة المرسل - - - - Base inductance, H - H, قاعدة المحاثة - - - - Extrinsic B-C capacitance, F - القوة الخارجية B-C - - - - Extrinsic base capacitance, F - القوة القاعدية الخارجية , ف - - - - Extrinsic collector capacitance, F - القوة الجمع الخارجية , ف - - - - - Flicker-noise coefficient - خفق معامل التشويش - - - - - Flicker-noise exponent - خفق التشويش الأسي - - - - - Flicker-noise frequency exponent - خفق معامل التردد الأسي - - - - Burst noise coefficient - تفريق معامل التشويش - - - - Burst noise exponent - الدليل تفريق تشويش - - - - Burst noise corner frequency, Hz - تفريق تشويش التردد في الزاوية هيرتز - - - - Ambient temperature at which the parameters were determined - درجة الحرارة المحيطة التي تتحدد معالم - - - - FBH HBT - FBH HBT - - - - HICUM Level 0 v1.12 verilog device - أجهزة فيريلوج HICUM 0 v1.12 - - - - - - - (Modified) saturation current - -التشبع الحالي -معدلة - - - - - - - Non-ideality coefficient of forward collector current - Non-ideality معامل التجميع الحالي إلى الأمام - - - - - - - Non-ideality coefficient of reverse collector current - Non-ideality معامل عكس جمع الحالية - - - - - - - - - - - - - - - forward Early voltage (normalization volt.) - تقدم أولي للتيار الكهربائي - - - - - - - forward d.c. high-injection roll-off current - - - - - - - - inverse d.c. high-injection roll-off current - inverse d.c. high-injection roll-off current - - - - - - - high-injection correction current - الحقن العالي التصحيح الحالي - - - - - - high-injection correction factor - الحقن العالي التصحيح العامل - - - - - - - BE saturation current - BEالتشبع الحالي - - - - - - - BE non-ideality factor - BE non-ideality factor - - - - - - - BE recombination saturation current - BEإعادة تشبع الحالي - - - - - - - BE recombination non-ideality factor - BE recombination non-ideality factor - - - - - - - BC saturation current - BCالتشبع الحالي - - - - - - - BC non-ideality factor - BC non-ideality factor - - - - - - - Zero-bias BE depletion capacitance - Zero-bias BE depletion capacitance - - - - - - - BE built-in voltage - BE مدمجة في الجهد - - - - - - - BE exponent factor - BE الدليل عامل - - - - - - - Ratio of maximum to zero-bias value - الحد الأقصى لنسبة الصفر قيمة الانحياز - - - - - - - low current transit time at Vbici=0 - منخفضة في الوقت الحالي لعبور Vbici = 0 - - - - - - - Base width modulation contribution - تعديل عرض قاعدة مساهمة - - - - - - - SCR width modulation contribution - عرض تعديل المساهمة SCR - - - - - - - Storage time in neutral emitter - باعث تخزينها في الوقت محايدة - - - - - - - Exponent factor for emitter transit time - - - - - - - - Saturation time at high current densities - التشبع في الوقت الحالي عالية الكثافة - - - - - - - Smoothing factor for current dependence - - - - - - - - Storage time at inverse operation - التخزين في وقت العملية العكسية - - - - - - - Low-field collector resistance under emitter - منخفضة ميدان المقاومة في ظل وجمع باعث - - - - - - - Voltage dividing ohmic and satur.region - ohmic تقسيم الجهد وsatur.region - - - - - - - - - - - Punch-through voltage - نخس من خلال الفولت - - - - - - - Saturation voltage - التشبع الجهد - - - - - - - Total zero-bias BC depletion capacitance - Total zero-bias BC depletion capacitance + + + + voltage of high level + المستوى العالي للفولتاج - - - - - BC built-in voltage - BC مدمجة في الجهد + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + Error + خطأ - - - - - BC exponent factor - BC دليل عامل + + Format Error: +Wrong line start! + خطأ في الشكل : +خطأ في خط البداية' ! - - - - - Punch-through voltage of BC junction - Punch-through voltage of BC junction + + Format Error: +Unknown component! +%1 + +Do you make use of loadable components? + - - - - - Zero-bias external BC depletion capacitance - Zero-bias external BC depletion capacitance + + Format Error: +Wrong 'component' line format! + خطأ في الشكل : +خطأ في العنصر شكل الخط! - - - - - External BC built-in voltage - الخارجي في الفولت BC + + coplanar line + خط متحد المستوى - - - - - External BC exponent factor - BC الخارجي لعامل العنصر + + + + + + + + + + + + name of substrate definition + تعريف اسم المادة - - - - - Split factor = Cjci0/Cjc0 - Split factor = Cjci0/Cjc0 + + + + + + + + + width of the line + عرض الخط - - - - Internal base resistance at zero-bias - القاعدة الداخلية للمقاومة معدومة + + + + width of a gap + عرض الفجوة - - - - - Geometry factor - العامل الهندسي + + + + + length of the line + طول الخط - - - - - - - - - External base series resistance - القاعدة الخارجية لسلسلة المقاومة + + + + material at the backside of the substrate + لوازم في تأخر المادة - - - - - - - - - Emitter series resistance - باعث لسلسلة المقاومة + use approximation instead of precise equation + استخدام التقريب بدلا من المعادلة الدقيقة - - - - - - - - - - External collector series resistance - جمع سلسلة المقاومة الخارجية + + Coplanar Line + خط متحد المستوى - - - - - - - - - - Substrate transistor transfer saturation current - الركازة الترانزستور الحالي نقل التشبع + + ideal coupler + الرابط المثالي - - - - - Substrate transistor transfer current non-ideality factor - لنقل الترانزستور الحالي non-idealityعامل + + coupling factor + عامل الربط - - - - SC saturation current - SCالتشبع الحالي + phase shift of coupling path in degree + مرحلة تحول في مسار درجة اقتران - - - - - SC non-ideality factor - SC non-ideality factor + + Coupler + الرابط - - - - - Zero-bias SC depletion capacitance - SCتفخيض السعة كهربائية إلى الصفر + + coplanar gap + متحد المستوى الفجوة - - - - - SC built-in voltage - SC مدمجة في الفولت + + width of gap between the two lines + عرض الفجوة بين خطين - - - - - External SC exponent factor - SC الخارجي لعامل العنصر + + Coplanar Gap + متحد المستوى الفجوة - - - - - SC punch-through voltage - نخس من خلال الفولت SC + + coplanar open + متحد المستوى المفتوح - - - - - Collector-base isolation (overlap) capacitance - جمع قاعدة العزلة (تداخل) مواسعة + + width of gap at end of line + عرض الفجوةفي نهاية الخط - - - - - Emitter-base oxide capacitance - انبعاثات أكسيد قاعدة مواسعة + + Coplanar Open + متحد المستوى المفتوح - - - - - Exponent factor - عامل الأس + + coplanar short + متحد المستوى صغير - - - - - Prefactor - Prefactor + + Coplanar Short + متحد المستوى صغير - - - - - M^(1-AF) - M^(1-AF) + + coplanar step + خطوة متحد المستوى - - - - - flicker noise exponent factor - خفق التشويش الأسي + + + + width of line 1 + عرض الخط 1 - - - - Bandgap-voltage - فرق الفولت - - - - - - - Effective emitter bandgap-voltage - المصدر الحقيقي فرق الفولت + + + width of line 2 + عرض الخط 2 - - - - - Effective collector bandgap-voltage - المجمع الحقيقي فرق الفولت + + distance between ground planes + المسافة بين سطح المستويات - - - - - Effective substrate bandgap-voltage - الركازة الحقيقي فرق الفولت + + Coplanar Step + خطوة متحد المستوى - - - - - Coefficient K1 in T-dependent bandgap equation - Coefficient K1 in T-dependent bandgap equation + + coupled transmission lines + - - - - - Coefficient K2 in T-dependent bandgap equation - Coefficient K2 in T-dependent bandgap equation + + characteristic impedance of even mode + - - - - - Frist-order TC of tf0 - Frist-order TC of tf0 + + characteristic impedance of odd mode + - - - - - Second-order TC of tf0 - Second-order TC of tf0 + + + + + electrical length of the line + الطول الكهربائى للخط - - - - - - 1/K^2 - 1/K^2 + + relative dielectric constant of even mode + - - - - - - - - Exponent coefficient in transfer current temperature dependence - معامل الأس في نقل درجة الحرارة الاعتماد الحالية + relative dielectric constant of odd mode + - - - - Exponent coefficient in BE junction current temperature dependence - BEمعامل الأس في وصلة درجة الحرارة الاعتماد الحالية + attenuation factor per length of even mode + - - - - TC of epi-collector diffusivity - TC of epi-collector diffusivity + attenuation factor per length of odd mode + - - - - - Relative TC of satur.drift velocity - Relative TC of satur.drift velocity + + Coupled Transmission Line + - - - - - Relative TC of vces - Relative TC of vces + + D flip flop with asynchron reset + D flip flop with asynchron reset - - - - - TC of internal base resistance - TC قاعدة المقاومة الداخلية + + D-FlipFlop + D-FlipFlop - - - - - TC of external base resistance - TC قاعدة المقاومة الخارجية + + + dc simulation + محاكاة نقطة التشغيل - - - - - TC of external collector resistance - TC مجمع المقاومة الخارجية + + + + + relative tolerance for convergence + التسامح النسبي للتلاقي - - - - TC of emitter resistances - TC باعث المقاومة + + + + absolute tolerance for currents + التسامح المطلق لتيارات - - - TC of avalanche prefactor - TC of avalanche prefactor + + + + absolute tolerance for voltages + التسامح المطلق لالفولتية - - - - TC of avalanche exponential factor - TC of avalanche exponential factor + + put operating points into dataset + وضع التشغيل إلى نقاط البيانات - - - - Flag for self-heating calculation - راية لحساب التسخين الذاتي + + + + maximum number of iterations until error + الحد الأقصى لعدد التكرار حتى الخطأ - - - - - - - - - Thermal resistance - المقاومة الحرارية - - - - - - - - - - - K/W - K/W + save subcircuit nodes into dataset + حفظ عقد سوب سركوي في البيانات - - - - Ws/K - Ws/K - - - - - - - Temperature for which parameters are valid - درجة الحرارة التي البارامترات صالحة + preferred convergence algorithm + خوارزمية التقارب المفضلة - - - - - - - - - C - C + + + + method for solving the circuit matrix + الطريقة حل مصفوفة الدارة - - - - - Temperature change for particular transistor - لتغير درجات حرارة الترانزستور الخاصة + + dc block + فك - - - - - - - - - K - K + + dc Block + فك - - npn HICUM L0 v1.12 - npn HICUM L0 v1.12 + + dc feed + وصول مستمر - - pnp HICUM L0 v1.12 - pnp HICUM L0 v1.12 + + dc Feed + وصول مستمر - - HICUM Level 2 v2.22 verilog device - أجهزة فيريلوج HICUM 2 v2.22 + + D flip flop with set and reset verilog device + - - - - - GICCR constant - ثابت GICCR + + + + cross coupled gate transfer function high scaling factor + - - - - - A^2s - A^2s + + + + + cross coupled gate transfer function low scaling factor + - - - - - Zero-bias hole charge - الشحنة عند مستوى الصفر + + + + cross coupled gate delay + - - - - - - - - - Coul - Coul + + D-FlipFlop w/ SR + - - - - - - High-current correction for 2D and 3D effects - التصحيح الحالي العالي لأثار 2D و 3D + + diac (bidirectional trigger diode) + diac (bidirectional trigger diode) - - - - - - Emitter minority charge weighting factor in HBTs - HBTs باعث الأقلية تهمة عامل الترج + + + (bidirectional) breakover voltage + (ثنائي الاتجاه) جهد breakover - - - - - Collector minority charge weighting factor in HBTs - HBTs مجمع الأقلية تهمة عامل الترج + (bidirectional) breakover current + (ثنائي الاتجاه) breakover الحالي - - - - - B-E depletion charge weighting factor in HBTs - HBTs عامل تفخيض شحنة الترجيح لقاعدة الإرسال في + + + parasitic capacitance + سعة المكثف تشويش - - - - - - B-C depletion charge weighting factor in HBTs - HBTs عامل تفخيض شحنة الترجيح فيB-E + + + + + + emission coefficient + معامل الانبعاث - - - - - Internal B-E saturation current - التشبع التيار الداخلي لقاعدة الإرسال + + + intrinsic junction resistance + مفرق المقاومة الجوهرية - - - - - - Internal B-E current ideality factor - عامل المثاليةللتيار الداخلي لقاعدة الإرسال + + Diac + Diac - - - - - - Internal B-E recombination saturation current - إعادة تشبع التيار الداخلي لقاعدة الإرسال + + + digital simulation + المحاكاة الرقمية - - - - - - Internal B-E recombination current ideality factor - معامل المثالي لإعادة تشبع التيار الداخلي لقاعدة الإرسال + + type of simulation + نوع المحاكات - - - - - Peripheral B-E saturation current - التشبع التيار الخارجي لقاعدة الإرسال + duration of TimeList simulation + TimeList مدة المحاكاة - - - - - - Peripheral B-E current ideality factor - معامل التيار المثالي الخارجي لقاعدة الإرسال + + netlist format + شكل netlist - - - - - - Peripheral B-E recombination saturation current - إعادة تشبع التيار الخارجي لقاعدة الإرسال + + + digital source + مصدر الرقمية - - - - - - Peripheral B-E recombination current ideality factor - معامل المثالي لإعادة تشبع التيار الخارجي لقاعدة الإرسال + + + number of the port + عدد المنفذ - - - - - Non-ideality factor for III-V HBTs - III-V HBTs ل Non-idealityمعامل + initial output value + قيمة الانتاج الأولي - - - - Base current recombination time constant at B-C barrier for high forward injection - لأجل الحقن العالي B-C الوقت الثابت لإعادة قاعدة التيار عند سقف + list of times for changing output value + قائمة مرات لتغيير قيمة الانتاج - - - - - - Internal B-C saturation current - التشبع التيار الداخلي B-C + + diode + صمام ثنائي - - - - - - Internal B-C current ideality factor - عامل المثاليةللتيار الداخلي لقاعدة الإرسالB-C + + + + zero-bias junction capacitance + قدرة ملتقى التحيز عند مستوى الصفر - - - - - External B-C saturation current - التشبع التيار الخارجيB-C - - - - - - - - External B-C current ideality factor - معامل التيار المثالي الخارجي B-C + + + + + grading coefficient + درجات المعامل - - - - - B-E tunneling saturation current - نفق التشبع التيار لقاعدة الإرسال + + + + junction potential + تقاطع الجهد - - - - - - Exponent factor for tunneling current - معامل الأسلنفق التيار + + linear capacitance + سعة المكثف الخطي - - - - Specifies the base node connection for the tunneling current - تحديد قاعدة عقدة الإتصال لنفق التيار + recombination current parameter + إعادة الخاصية الحالية - - - - - Avalanche current factor - معامل انهيار التيار - - - - - - - - Exponent factor for avalanche current - معامل الأس لانهيار التيار + emission coefficient for Isr + معامل الانبعاث لIsr - - - - - - Relative TC for FAVL - FAVL نسبي لأجل TC + + ohmic series resistance + ohmicسلسلة المقاومة - - - - - - Relative TC for QAVL - QAVL نسبي لأجل TC + + + + transit time + زمن العبور - - - - - - Zero bias internal base resistance - القاعدة الداخلية للمقاومة معدومة + + high-injection knee current (0=infinity) + high-injection knee current (0=infinity) - - - - - - Factor for geometry dependence of emitter current crowding - معامل الإرتباط الهندسي لإرسال تيار مزدحم + + + + reverse breakdown voltage + عكس انهيار الجهد - - - - - Correction factor for modulation by B-E and B-C space charge layer - مساحة طبقة التشحين B-Cعامل التصحيح للمعدل عن طريق قاعدة الإرسال و + + + current at reverse breakdown voltage + عكس اتجاه الانهيار الحالي في الجهد - - - - - - Ratio of HF shunt to total internal capacitance (lateral NQS effect) - لجمع السيعة الداخلية (آثار الجانبية)ا HFنسبة تحويل + + Bv linear temperature coefficient + Bvالمعامل الخطي لدرجة الحرارة - - - - - Ration of internal to total minority charge - نسبة لمجموع الشحن الأقلية الداخلية - - - - - - - - Forward ideality factor of substrate transfer current - معامل تقدم المثالي لقوام تحويل التيار + Rs linear temperature coefficient + Rs المعامل الخطي لدرجة الحرارة - - - - - C-S diode saturation current - تشبع التيار في الصمام الثنائي C-S + Tt linear temperature coefficient + Tt المعامل الخطي لدرجة الحرارة - - - - - - Ideality factor of C-S diode current - التيار في الصمام الثنائي C-Sمعامل المثالي ل + + Tt quadratic temperature coefficient + التربيعية معامل لدرجة الحرارة Tt - - - - - Transit time for forward operation of substrate transistor - وقت مرورللعملية المباشرة لقوام الترانزستور + M linear temperature coefficient + M المعامل الخطي لدرجة الحرارة - - - - - - Substrate series resistance - قوام تسلسل المقاومة + + M quadratic temperature coefficient + لتربيعية معامل لدرجة الحرارة M - - - - - - Substrate shunt capacitance - قوام إصال السعة + + + default area for diode + المنطقة الافتراضية للصمام الثنائي - - - - - - Internal B-E zero-bias depletion capacitance - قاعدة الإرسال الداخلية لتخفيض السعة معدومة + + Diode + صمام ثنائي - - - - - - Internal B-E built-in potential - قاعدة الإرسال الداخلية لبناء طاقة قصوى + + data voltage level shifter (digital to analogue) verilog device + - - - - - Internal B-E grading coefficient - معامل درجات قاعدة الإرسال الداخلية + + voltage level + - - - - - Ratio of maximum to zero-bias value of internal B-E capacitance - النسبة القصوى لسعة قاعدة الإرسال معدومة + + time delay + - - - - - - Peripheral B-E zero-bias depletion capacitance - تفخيض السعة الخارجية لقاعدة الإرسال إلى الصفر + + D2A Level Shifter + - - - - - - Peripheral B-E built-in potential - إدماج التيار العالي لقاعدة الإرسال الخارجية + + data voltage level shifter (analogue to digital) verilog device + + + + + + + + + + + - - - - - Peripheral B-E grading coefficient - معامل الدرجات لقاعدة الإرسال الخارجية - - - - - - - - Ratio of maximum to zero-bias value of peripheral B-E capacitance - النسبة العالية لسعة قاعدة الإرسال الخارجية معدومة - - - - - - - - Internal B-C zero-bias depletion capacitance - الداخلية لتخفيض السعة معدومةB-C + + + + + + + + + + + + V + V - - - - - - Internal B-C built-in potential - الخارجية B-Cإدماج التيار العالي ل + + A2D Level Shifter + - - - - - - Internal B-C grading coefficient - الداخلية B-C الداخليةمعامل درجات قاعدة الإرسال ل + + 2to4 demultiplexer verilog device + - - - - - - Internal B-C punch-through voltage - الداخلي punch-through B-C ضغط + + 2to4 Demux + - - - - - - External B-C zero-bias depletion capacitance - الخاجية الى الصفرB-C تخفيض السعة + + 3to8 demultiplexer verilog device + - - - - - - External B-C built-in potential - الخارجية B-Cإدماج التيار العالي ل + + 3to8 Demux + - - - - - - External B-C grading coefficient - الخارجية B-C الداخليةمعامل درجات قاعدة الإرسال ل + + 4to16 demultiplexer verilog device + - - - - - - External B-C punch-through voltage - الخارجي punch-through B-C ضغط + + 4to16 Demux + - - - - - Partitioning factor of parasitic B-C cap - B-Cمعامل التقسيم لسقف التشويش + + externally controlled voltage source + - - - - - Partitioning factor of parasitic B-E cap - B-Cمعامل التقسيم لسقف التشويش + + + voltage in Volts + الفولتاج بالفولت - - - - - - C-S zero-bias depletion capacitance - إلى الصفر C-S تخفيض سعة + + Externally Controlled Voltage Source + - - - - - - C-S built-in potential - C-S إدماج التيار العالي ل + + EPFL-EKV MOS 2.6 verilog device + أجهزة فيريلوج EPFL-EKV MOS 2.6 - - - - - - C-S grading coefficient - C-S معامل الدرجات + + long = 1, short = 2 + long = 1, short = 2 - - - - - C-S punch-through voltage - punch-through C-S ضغط + length parameter + طول المعلم + - - - - - Low current forward transit time at VBC=0V - VBC=0Vإنخفاض وقت عبور التيار المباشر عند - - + - - - - - Time constant for base and B-C space charge layer width modulation - مع التعديل B-C قاعدة الوقت الثابت و شحن طبقة السطح - - - - - - Time constant for modelling carrier jam at low VCE - منخفض VCE الوقت الثابت لتصميم إنسداد الناقل عند + + + + + m + m - - - - - - Neutral emitter storage time - وقت تخزين المرسل المحايذ + + Width parameter + عرض المعلم - - - - - Exponent factor for current dependence of neutral emitter storage time - معامل الدليل للتيار المستقل من وقت تخزين المرسل المحايذ + parallel multiple device number + عدد الأجهزة الموازية المتعددة - - - - - Saturation time constant at high current densities - ثابت وقت التشبع عند كثافة التيار العالي + series multiple device number + سلسلة رقم الجهاز متعددة - - - - - - Smoothing factor for current dependence of base and collector transit time - معامل التمهيد للتيار المستقل من القاعدة و مجمع وقت العبور + + gate oxide capacitance per unit area + بوابة أكسيد سعة المكثف في وحدة المساحة - - - - - - Partitioning factor for base and collector portion - معامل التقسيم للقاعدة وجزء من المجمع + + F/m**2 + F/m**2 - - - - - Internal collector resistance at low electric field - مجمع المقاومة الداخلي عند حقل الكهربائي المنخفض + metallurgical junction depth + تقاطع عمق المعدنية - - - - - Voltage separating ohmic and saturation velocity regime - ضغط التبديل بين نظام السرعة الأومي و التشبع + channel width correction + عرض قناة التصحيح - - - - - Internal C-E saturation voltage - الداخلي C-E ضغط التشبع + channel length correction + طول قناة التصحيح - - - - - Collector punch-through voltage - punch-through ضغط المجمع + long channel threshold voltage + طول قناة عتبة الجهد - - - - - Storage time for inverse operation - وقت التخزين للعملية العكسية + body effect parameter + هيئة أثر المعلم - - - - - - Total parasitic B-E capacitance - B-E مجموع التشويش في سعة + + V**(1/2) + V**(1/2) - - - - - - Total parasitic B-C capacitance - B-C مجموع التشويش في سعة + + bulk Fermi potential + الجزء الأكبر المحتملة فيرمي - - - - - Factor for additional delay time of minority charge - معامل وقت الإنتضار للشحنة الأقلية + + + transconductance parameter + transconductance معلم - - - - - - Factor for additional delay time of transfer current - معامل وقت الإنتضار لتيار التحويل + + + A/V**2 + A/V**2 - - - - Flag for turning on and off of vertical NQS effect - العمودي NQS راية لتشغيل و توقيف لآثار + mobility reduction coefficient + التحرك معامل للحد - - - - - - Flicker noise coefficient - معامل ومضة التشويش + + + + + + 1/V + التحرك - - - - - Flicker noise exponent factor - عامل دليل ومضة التشويش + mobility coefficient + معامل الإنتشار - - - - - Flag for determining where to tag the flicker noise source - راية لتحديد مصدر ومضة التشويش + + + + V/m + V/m - - - - - - Scaling factor for collector minority charge in direction of emitter width - معامل سلم المجمع الشحنة الأقلية في إتجاه عرض المرسل + + + longitudinal critical field + طول الحقل الرئيسي - - - - - - Scaling factor for collector minority charge in direction of emitter length - معامل سلم المجمع الشحنة الأقلية في إتجاه طول المرسل + + depletion length coefficient + نفاد طول المعامل - - - - - Bandgap voltage extrapolated to 0 K - Kاستقراء فرق الضغط عند 0 - - - - - - - - First order relative TC of parameter T0 - T0الاعتماد الحرارية من الدرجة الأولى ب + narrow-channel effect coefficient + معامل تأثير القنوات الضيقة - - - - - - Second order relative TC of parameter T0 - T0الاعتماد الحرارية من الدرجة الثانية ب + + reverse short channel charge density + كثافة تهمة القناة قصيرة عكسية - - - - - - Temperature exponent for RCI0 - RCI0دليل الدرجة الحرارية ل + + A*s/m**2 + كثافة تهمة القناة قصيرة عكسية - - - - - Relative TC of saturation drift velocity - الاعتماد الحراري على سرعة الانحراف التشبع + characteristic length + خصائص الطول - - - - - Relative TC of VCES - VCESالاعتماد الحراري على + threshold voltage temperature coefficient + معامل درجة حرارة عتبة الجهد - - - - - - Temperature exponent of internal base resistance - دليل الحرارة لقاعدة المقاومة الداخلي + + V/K + V/K - - - - - Temperature exponent of external base resistance - دليل الحرارة لقاعدة المقاومة الخارجي + mobility temperature coefficient + معامل إنتشار الحرارة - - - - - Temperature exponent of external collector resistance - دليل الحرارة لقاعدة المجمع الخارجي + Longitudinal critical field temperature exponent + درجة الحرارة الحرجة طولية مجال الأس - - - - - Temperature exponent of emitter resistance - دليل الحرارة لمرسل المقاومة + Ibb temperature coefficient + معامل درجة الحرارةIbb - - - - - - Temperature exponent of mobility in substrate transistor transit time - دليل الحرارة لتحرك في وقت عبور قوام الترنزستور + + 1/K + 1/K - - - - Effective emitter bandgap voltage - المرسل الحقيقي لفرق الضغط - - - - - - - Effective collector bandgap voltage - المجمع الحقيقي لفرق الضغط + heavily doped diffusion length + قوة مخدر طول النشر - - - - Effective substrate bandgap voltage - القوام الحقيقي لفرق الضغط + drain/source diffusion sheet resistance + استنزاف / المصدر نشر ورقة المقاومة - - - - - Coefficient K1 in T-dependent band-gap equation - Coefficient K1 in T-dependent band-gap equation + + Ohm/square + الأوم / مربع - - - - Coefficient K2 in T-dependent band-gap equation - Coefficient K2 in T-dependent band-gap equation + source contact resistance + مصدر الاتصال المقاومة - - - - - Exponent coefficient in B-E junction current temperature dependence - دليل معامل في قاعدة الإرسال وصلة إعتماد الحراري للتيار + + + + + + + + + + + + + Ohm + Ω - - - - - - Relative TC of forward current gain for V2.1 model - V2.1الاعتماد الحراري على ربح التيار المباشر لنوع + + drain contact resistance + استنزاف مقاومة الاتصال - - - - Flag for turning on and off self-heating effect - راية لتشغيل أو توقيف آثار التسخين الذاتية + gate to source overlap capacitance + بوابة لمصدر التداخل لسعة المكيف - - - - - J/W - J/W + + + + + F/m + F/m - - - - - Flag for compatibility with v2.1 model (0=v2.1) - (0=v2.1) v2.1 راية التوافق مع نوع + + gate to drain overlap capacitance + بوابة لمصدر التداخل لسعة المكثف - - - - - - Temperature at which parameters are specified - درجة الحرارة عند أي متغير محدد + + gate to bulk overlap capacitance + بوابة لمعظم التداخل لسعة المكثف - - - - - Temperature change w.r.t. chip temperature for particular transistor - الانحراف الحراري للترانزستور بسبب التسخين الكلي للرقائق + first impact ionization coefficient + أول أثر معامل التأين - - HICUM L2 v2.22 - HICUM L2 v2.22 + + 1/m + 1/m - - HICUM Level 0 v1.2 verilog device - أجهزة فيريلوج v2.23 2 HICUM {0 ?} {1.2 ?} + + second impact ionization coefficient + الأثر الثاني لمعامل التأين - - - - reverse Early voltage (normalization volt.) - ضغط الإنعكاس فقط (تسوية فولت)ـ + + saturation voltage factor for impact ionization + عامل الشبع الجهد على تأثير التأين - - - flag for turning on base related critical current - راية لتشغيل قاعدة الإتصال الكهربائي - - - - - - Smoothing factor for the d.c. injection width - d.c. عوامل تمهيد من عرض حقن - - - - - - BE charge built-in voltage for d.c. transfer current - d.c. ضغط بناء شحنة قاعدة الإرسال لتيار التحويل + area related theshold voltage mismatch parameter + منطقة ذات الصلة بعتبة عدم التوافق معلم الفولتاج - - - - charge BE exponent factor for d.c. transfer current - d.c. معامل دليل شحن قاعدة الإرسال لتيار التحويل + + V*m + V*m - - - BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current - + area related gain mismatch parameter + منطقة ذات الصلة الحصول على معلم عدم التوافق - - - TC of iqf - TC of iqf + + area related body effect mismatch parameter + منطقة ذات الصلة تأثير عدم التوافق المعلم - - - - Exponent factor for temperature dependent thermal resistance - + + sqrt(V)*m + sqrt(V)*m + + + + + + + + - npn HICUM L0 v1.2 - npn HICUM L0 v1.2 - - - - pnp HICUM L0 v1.2 - pnp HICUM L0 v1.2 + + A + A - - HICUM Level 0 v1.2g verilog device - + + + + + + + + F + F - - high-injection roll-off current - + + + diode relative area + منطقة الصمام الثنائي النسبية - - TC of iqf (bandgap coefficient of zero bias hole charge) - + + charge partition parameter + شحن معلم التقسيم - TC of avalanche prefactor, identical to alfav of Hicum/L2 - + + + + + + + parameter measurement temperature + وسيط لقياس درجة الحرارة + + + + - TC of avalanche exponential factor, identical to alqav of Hicum/L2 - + + + Celsius + مئوية - - Emitter part coefficient of the zero bias hole charge temperature variation - + + EPFL-EKV NMOS 2.6 + EPFL-EKV NMOS 2.6 - - Collector part coefficient of the zero bias hole charge temperature variation - + + EPFL-EKV PMOS 2.6 + EPFL-EKV PMOS 2.6 - - Bandgap TC parameter of ver - + + equation defined device + جهاز تحديد المعادلة - - Bandgap TC parameter of vef - + + type of equations + نوع المعادلة - Specific recombination current at the BC barrier for high forward injection - - - - - npn HICUM L0 v1.2g - npn HICUM L0 v1.2g {0 ?} - - - - pnp HICUM L0 v1.2g - pnp HICUM L0 v1.2g {0 ?} + number of branches + عدد الفروع - - HICUM Level 0 v1.3 verilog device - أجهزة فيريلوج v2.23 2 HICUM {0 ?} {1.3 ?} + + + current equation + المعادلة الحالية - - Flag for using third order solution for transfer current - + + + charge equation + شحن المعادلة - - bias dependence for reverse Early voltage - + + Equation Defined Device + جهاز تحديد المعادلة - - Flag for turning temperature dependence of tef0 on and off - + + equation + المعادلة - - TC of Reverse Early voltage - + + + + Equation + المعادلة - - TC of AVER - + + put result into dataset + وضع نتيجة في جدول البيانات - - Bandgap difference between base and BE-junction + + externally driven transient simulation - - Frist-order TC of iqfh - + + + integration method + الطريقة الإندماجية - Second-order TC of iqfh - - - - - npn HICUM L0 v1.3 - npn HICUM L0 v1.3 {0 ?} + + order of integration method + ترتيب الطريقة الإندماجية - - pnp HICUM L0 v1.3 - pnp HICUM L0 v1.3 {0 ?} + + + initial step size in seconds + حجم الخطوة أولية بالثواني - - HICUM Level 2 v2.1 verilog device - أجهزة فيريلوج v2.21 2 HICUM + + + minimum step size in seconds + حجم الخطوة الأدنى بالثواني - - Partitioning factor of parasitic B-C capacitance - B-C معامل تقسيم سعة تشويش في + + + relative tolerance of local truncation error + خطأ قي التسامح النسبي للبتر المحلي - - Noise factor for internal base resistance - معامل التشويش لقاعدة المقاومة الداخلية + + + absolute tolerance of local truncation error + خطأ قي التسامح المطلق للبتر المحلي - - HICUM L2 v2.1 - HICUM L2 v2.1 + + + overestimation of local truncation error + خطأ قي التسامح المبالغ للبتر المحلي - - HICUM Level 2 v2.23 verilog device - أجهزة فيريلوج v2.23 2 HICUM + + + relax time step raster + مرحلة إسترخاء خطوط المسح - - HICUM L2 v2.23 - HICUM L2 v2.23 + + + perform an initial DC analysis + تؤدي الحساب الأولي لمرحلة التشغيل - - HICUM Level 2 v2.24 verilog device - أجهزة فيريلوج v2.23 2 HICUM {2 ?} {2.24 ?} + + + maximum step size in seconds + حجم الخطوة بثواني - - HICUM L2 v2.24 - HICUM L2 v2.24 {2 ?} + + External transient simulation + - - hicumL2V2p31n verilog device + + 1bit full adder verilog device - - Weight factor for the low current minority charge + + 1Bit FullAdder - - Parameter describing the slope of hjEi(VBE) + + 2bit full adder verilog device - - Smoothing parameter for hjEi(VBE) at high voltage + + 2Bit FullAdder - - Time constant for modeling carrier jam at low VCE + + gated D latch verilog device - - Barrier voltage + + Gated D-Latch - - Normalization parameter + + 4bit Gray to binary converter verilog device - - Smoothing parameter for barrier voltage + + 4Bit Gray2Bin - - fitting factor for critical current - + + ground (reference potential) + السطح (إشارة مختلفة)ـ - - Flag for turning on and off of correlated noise implementation - + + Ground + السطح - - Emitter resistance flicker noise coefficient - + + gyrator (impedance inverter) + مَلْفُوف(مقاومة العاكس)ـ - - Emitter resistance flicker noise exponent factor - + + gyrator ratio + نسبة الملفوف - - Bandgap difference between B and B-E junction used for hjEi0 and hf0 - + + Gyrator + الملفوف - - Temperature coefficient for ahjEi + + 1bit half adder verilog device - - Temperature coefficient for hjEi0 + + 1Bit HalfAdder - - Temperature coefficient for Rth - + + Harmonic balance simulation + محاكاة توازن المتناسق - - First order relative TC of parameter Rth - + + number of harmonics + عدد التوافقيات - - HICUM L2 V2.31 - + + Harmonic balance + توازن متناسق @@ -12083,7 +7790,7 @@ Wrong 'component' line format! - + ERROR: No file name in SPICE component "%1". خطأ : لا يوجد اسم الملف في عنصر SPICE في "٪ 1". @@ -12506,11 +8213,15 @@ Wrong 'component' line format! مصدر التيار مسيطر الفولت - voltage controlled voltage source مصدر الفولت مسيطر الفولت + + + voltage controlled resistor + + resistance gain @@ -12545,7 +8256,7 @@ Wrong 'component' line format! - + ERROR: No file name in %1 component "%2". خطأ : لايوجد اسم الملف من %1 العنصر "٪ 2". @@ -12708,7 +8419,7 @@ Wrong 'component' line format! - + invalid غير صحيح @@ -12819,7 +8530,7 @@ Wrong 'component' line format! - + Successfully exported @@ -12842,8 +8553,8 @@ Use PNG, JPEG or SVG graphics! - - + + verilog-a user devices @@ -12902,14 +8613,14 @@ Use PNG, JPEG or SVG graphics! - + diagrams - + paintings @@ -13027,16 +8738,16 @@ Set the Octave location on the application settings. - + - + untitled بدون عنوان - + Format Error: 'Painting' field is not closed! @@ -13211,17 +8922,17 @@ Unknown field! خطأ : لا يمكن تحميل subcircuit "٪ 1". - + WARNING: Skipping library component "%1". تحذير : مكتبة تخطي عنصر "٪ 1". - - ERROR: Cannot load library component "%1". - خطأ : لا يمكن تحميل مكتبة عنصر "٪ 1". + + ERROR: "%1": Cannot load library component "%2" from "%3" + - + WARNING: Ignore simulation component in subcircuit "%1". تحذير : تجاهل عنصر المحاكاة في subcircuit "٪ 1". @@ -13231,7 +8942,7 @@ Unknown field! - + ERROR: Only one digital simulation allowed. خطأ : واحد فقط يسمح المحاكاة الرقمية. @@ -13359,11 +9070,17 @@ a substrate with lower permittivity and larger height. Cannot save settings file ! + + + Quarter wave filters do not allow low-pass nor high-pass masks + + + QucsActiveFilter - + &File ‏‏&ملف @@ -13373,7 +9090,29 @@ a substrate with lower permittivity and larger height. &خروج - + + &View + + + + + &Console + + + + + Enables/disables the filter calculation console + + + + + Console + +Enables/disables the filter calculation console + + + + &Help مساعدة& @@ -13393,30 +9132,30 @@ a substrate with lower permittivity and larger height. كيو تي حول... - - + + Passband attenuation, Ap (dB) - + Stopband attenuation, As (dB) - - Cuttof frequency, Fc (Hz) + + Cutoff frequency, Fc (Hz) - - + + Stopband frequency, Fs (Hz) - + Passband ripple Rp(dB) @@ -13426,7 +9165,7 @@ a substrate with lower permittivity and larger height. - + Filter order @@ -13476,27 +9215,61 @@ a substrate with lower permittivity and larger height. - - Calculation console + + Low Pass - - Filter topology + + General filter amplitude-frequency response - - Filter type: - مرشح من نوع : + + + + Unable to implement filter with such parameters and topology +Change parameters and/or topology and try again! + + + + + + Filter calculation was successful + - LowPass + Filter calculation terminated with error! + + + + + Filter calculation terminated with error + + + + + Lower cutoff frequency, Fl (Hz) + + + + + Copyright (C) 2014, 2015 by + حقوق الطبع محفوظة (جيم) 2004 ، 2005 من قبل {2014, 2015 ?} + + + + Filter topology + Filter type: + مرشح من نوع : + + + High Pass @@ -13522,62 +9295,45 @@ a substrate with lower permittivity and larger height. - + Cauer section - - General amplitude frequency response - - - - - Filter topology preview (one stage) - - - - + Filter parameters - + Transfer function and Topology - - General filter amplidure-frequency response - - - - + Filter topology preview - + Filter calculation console - + + + Ready. + جاهز. + + + Upper cutoff frequency of band-pass/band-stop filter is less than lower. Unable to implement such filter. Change parameters and try again. - - - - Unable to implement filter with such parameters and topology -Change parapeters and/or topology and try again! - - - - + Unable to use Cauer section for Chebyshev or Butterworth frequency response. Try to use another topology. @@ -13593,40 +9349,28 @@ frequency response. Try to use another topology. Function will be implemented in future version - - - -Filter calculation was sucessfull - - - - - -Filter calculation terminated with error - - Upper cutoff frequency, Fu (Hz) - - Lower cuttoff frequency, Fl (Hz) + + Transient bandwidth, TW (Hz) - - Transient bandwidth, TW (Hz) + + Error! - + Active filter design - + About... حول... @@ -13638,12 +9382,7 @@ Active Filter synthesis program - - Copyright (C) 2014 by - حقوق الطبع محفوظة (جيم) 2004 ، 2005 من قبل {2014 ?} - - - + About Qt عن كيو تي @@ -13651,7 +9390,7 @@ Active Filter synthesis program QucsApp - + Schematic تخطيطي @@ -13667,42 +9406,42 @@ Active Filter synthesis program - + VHDL Sources مصادر VHDL - - + + Verilog Sources مصادر verilog - - + + Verilog-A Sources - - + + Octave Scripts - + Spice Files - + Any File أية ملفات - + The schematic search path has been refreshed. @@ -13722,7 +9461,7 @@ Active Filter synthesis program الخطط - + New جديد @@ -13807,13 +9546,13 @@ Active Filter synthesis program - + - + @@ -13836,7 +9575,7 @@ Active Filter synthesis program خطأ - + Cannot open "%1". لا نستطيع فتح "%1. @@ -13848,8 +9587,16 @@ Active Filter synthesis program المكتبة فاسدة. - - + + + + + Search results + + + + + @@ -13868,13 +9615,18 @@ Active Filter synthesis program معلومات - + Default icon not found: %1.png - + + verilog-a user devices + + + + -port -الميناء @@ -13885,14 +9637,14 @@ Active Filter synthesis program - + The document contains unsaved changes! وتتضمن هذه الوثيقة التغييرات غير المحفوظة! - + Do you want to save the changes before copying? @@ -13903,13 +9655,13 @@ Active Filter synthesis program - + &Save & حفظ - + Copy file @@ -13943,31 +9695,31 @@ Active Filter synthesis program - + Warning تحذير - + This will delete the file permanently! Continue ? حذف هذا الملف نهائيا! الاستمرار؟ - + No لا - + - + Yes نعم - + unknown @@ -14128,7 +9880,7 @@ Active Filter synthesis program - + @@ -14142,7 +9894,7 @@ Active Filter synthesis program جاهز. - + Creating new text editor... محرر نصوص جديدة... @@ -14207,12 +9959,12 @@ Active Filter synthesis program - + Cancel إلغاء - + Cannot overwrite an open document لا يمكن الكتابة فوق مفتوحة وثيقة @@ -14227,7 +9979,7 @@ Active Filter synthesis program حفظ الملف... - + Closing file... إغلاق ملف... @@ -14251,10 +10003,6 @@ Active Filter synthesis program Open examples directory... - - OK - موافق - Printing... @@ -16203,110 +11951,6 @@ About Qt by Trolltech Warnings in last simulation! Press F5 تحذيرات في التمثيل السابق! اضغط على F5 - - About... - حول... - - - Qucs Version - qucsالنسخة ‏ - - - Quite Universal Circuit Simulator - Quite Universal Circuit Simulator - - - Copyright (C) - حقوق الطبع محفوظة - - - by Michael Margraf - من قبل مايكل مرغراف - - - Simulator by Stefan Jahn - التمثيل من قبل ستيفان جون - - - VHDL simulator 'FreeHDL' by Edwin Naroska and Marius Vollmer - من قبل VHDL ل FreeHDL' تمثيل Edwin Naroska and Marius Vollmer - - - Special thanks to Jens Flucke and Raimund Jacob - شكر خاص ل Jens Flucke and Raimund Jacob - - - Many thanks to Mike Brinson for correcting the VHDL output - شكرا جزيلا لMike Brinson لتصحيح إظهار VHDL - - - GUI improvements by Gopala Krishna A - إدخال تحسينات على واجهة المستخدم من قبل Gopala Krishna A - - - Verilog-AMS interface by Helene Parruitte - واجهة المستخدم ل Verilog-AMS من قبل - - - Translations: - ترجمات : - - - German by Stefan Jahn - من جانب الألماني ستيفان جون - - - Polish by Dariusz Pienkowski - البولندي من قبل داريوس Pienkowski - - - Romanian by Radu Circa - الرومانية من قبل رادو سركا - - - French by Vincent Habchi, F5RCS - الفرنسية من قبل فانسان Habchi ، F5RCS - - - Spanish by Jose L. Redrejo Rodriguez - الاسبانية من قبل خوسيه رودريغيز ل Redrejo - - - Japanese by Toyoyuki Ishikawa - اليابانية من قبل Toyoyuki إيشيكاوا - - - Italian by Giorgio Luparia and Claudio Girardi - الايطالية من قبل جورجيو Luparia وكلاوديو Girardi - - - Hebrew by Dotan Nahum - العبرية من قبل ناحوم دوتان - - - Swedish by Peter Landgren - السويدية من قبل بيتر Landgren - - - Turkish by Onur and Ozgur Cobanoglu - التركية من قبل وأوزغور Cobanoglu - - - Hungarian by Jozsef Bus - الهنغارية من قبل Jozsef Bus - - - Russian by Igor Gorbounov - الروسية من قبل ايغور Gorbounov - - - Czech by Marek Straka - التشيكية من قبل ماريك بها Straka - - - Catalan by Antoni Subirats - الكاتالوينية من قبل انتوني سوبيراتز - QucsAttenuator @@ -16574,7 +12218,7 @@ Very simple text editor for Qucs QucsFilter - + &File ‏‏&ملف @@ -16614,7 +12258,7 @@ Very simple text editor for Qucs - + Filter type: مرشح من نوع : @@ -16650,29 +12294,29 @@ Very simple text editor for Qucs - + Corner frequency: ركن تردد : - + Stop frequency: وقف تردد : - + Stop band frequency: توقف الفرقة تردد : - - + + Pass band ripple: شريط تمرير متتالية : - + Stop band attenuation: وقف تخفيف الفرقة : @@ -16742,19 +12386,19 @@ Filter synthesis program - + Result: النتيجة : - + Error خطأ - + Stop frequency must be greater than start frequency. ولا بد من وقف تردد أكبر منتردد البدء. @@ -16909,17 +12553,22 @@ Enables/disables the table of contents حول - + Component Selection اختيار العنصر - - Search... - البحث عن... + + Search Lib Components + - + + Clear + + + + Component العنصر @@ -16934,7 +12583,7 @@ Enables/disables the table of contents إظهر نموذج - + About... حول... @@ -16945,6 +12594,12 @@ Enables/disables the table of contents مكتبة Qucs + + + Copyright (C) 2011-2015 Qucs Team + + + Copyright (C) 2005 by Michael Margraf @@ -16953,7 +12608,7 @@ Enables/disables the table of contents - + QucsLib Help مساعدة QucsLib @@ -16973,14 +12628,17 @@ Enables/disables the table of contents النموذج - - Search result - نتيجة البحث + + + + + Search results + - + - + @@ -16989,13 +12647,13 @@ Enables/disables the table of contents خطأ - + Cannot open "%1". لا نستطيع فتح "%1. - + @@ -17003,21 +12661,6 @@ Enables/disables the table of contents Library is corrupt. المكتبة فاسدة. - - - Search Library Component - البحث في مكتبة العنصر - - - - Result - النتيجة - - - - No appropriate component found. - العثور على أي عنصر مناسب. - QucsSettingsDialog @@ -18033,7 +13676,7 @@ Edits the symbol for this schematic - + Error خطأ @@ -18051,7 +13694,7 @@ Set the admsXml location on the application settings. - + ERROR: Cannot create library file "%s". ERROR: Cannot create library file "%s". @@ -18060,83 +13703,46 @@ Set the admsXml location on the application settings. SearchDialog - - - - Dialog - - - - Text to search for للبحث عن نص - - - - Text to replace with ليحل محل النص مع - - - - Ask before replacing نسأل قبل ان يحل محل - - - - Case sensitive القضية الحساسة - - - - Whole words only كلمات فقط لكامل - - - - Search backwards البحث الوراء - - - - Next - - - - - Close غلق @@ -18150,31 +13756,6 @@ Set the admsXml location on the application settings. Search Text البحث عن النص - - - The search result contains all components whose -name contains the search string. All libraries -are included in the search. - نتيجة البحث تعطي جميع مكونات -اسم يتضمن النص المطلوب. البحث -ليشمل جميع المكتبات. - - - - Search string: - كلمة البحث : - - - - Search - البحث - - - - - Search result - نتيجة البحث - SettingsDialog @@ -18455,11 +14036,6 @@ are included in the search. Simulation aborted by the user! - - Errors: -------- - خطأ:------- - SpiceDialog @@ -18622,7 +14198,7 @@ are included in the search. SymbolWidget - + Symbol: رمز : @@ -18631,6 +14207,13 @@ are included in the search. ! Drag n'Drop me ! ! Drag n'Drop me ! + + + Warning: Symbol '%1' missing in Qucs Library. +Drag and Drop may still work. +Please contact the developers. + + TextDoc diff --git a/qucs/translations/qucs_ca.ts b/qucs/translations/qucs_ca.ts index 31044cb832..622e816867 100644 --- a/qucs/translations/qucs_ca.ts +++ b/qucs/translations/qucs_ca.ts @@ -1108,10 +1108,6 @@ Save to file (Graphics format by extension) Guardar a arxiu (format dels gràfics per extensió) - - Width in pixels - Amplada en pixels - Height in pixels @@ -1137,10 +1133,6 @@ Cancel Cancel·lar - - File - Arxiu - Width in pixels @@ -1186,10 +1178,6 @@ Export Schematic to Image - - Export to image - Exportar a imatge - Export diagram to raster or vector image @@ -3545,62 +3533,6 @@ Resistor color code computation program - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - @@ -3756,10 +3688,6 @@ Resistor color code computation program - - - - polarity @@ -3964,10 +3892,6 @@ Resistor color code computation program - - - - @@ -4108,5709 +4032,1480 @@ Resistor color code computation program - - bsim3v34nMOS verilog device + + + + + + + + + + + simulation temperature + + + capacitor + condensador + + capacitance in Farad + capacidad en Faradios + + + initial voltage for transient simulation + tensión inicial para la simulación de transitorio + + + + + + + + schematic symbol + símbolo de esquema + + + + Capacitor + Condensador + + + + current controlled current source + fuente de intensidad controlada por intensidad + + + + + + forward transfer factor + factor de transferencia directa + + + + + + + + + + + + + + + delay time + temps de retardo + + + + Current Controlled Current Source + Fuene de Intensidad Controlada por Intensidad + + + + current controlled voltage source + fuente de tensión controlada por intensidad + + + + Current Controlled Voltage Source + Fuente de Tensión Controlada por Intensidad + + + + circulator + circulador + + + + reference impedance of port 1 + impedancia de referencia de la conexión 1 + + + reference impedance of port 2 + impedancia de referencia de la conexión 2 + + + reference impedance of port 3 + impedancia de referencia de la conexión 3 + + + + Circulator + Circulador + + + + coaxial transmission line + línea de transmisión coaxial + + + + + relative permittivity of dielectric + permitividad relativa del dieléctrico + + + + + specific resistance of conductor + resistencia específica del conductor + + + + + relative permeability of conductor + permeabilidad relativa del conductor + + + inner diameter of shield + diámetro interior de la pantalla + + + diameter of inner conductor + diámetro del conductor interior + + + + mechanical length of the line + longitud mecánica de la línea + + + + + + loss tangent + tangente de perdidas + + + + Coaxial Line + Línea coaxial + + + + 1bit comparator verilog device + + + + + 1Bit Comparator + + + + + 2bit comparator verilog device + + + + + 2Bit Comparator + + + + + 4bit comparator verilog device + + + + + 4Bit Comparator + + + + + number of input ports + número de puertos de entrada + + - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - simulation temperature - - - - - bsim3v34nMOS - - - - - bsim3v34pMOS verilog device - - - - - bsim3v34pMOS - - - - - bsim4v30nMOS verilog device - - - - - bsim4v30nMOS - - - - - bsim4v30pMOS verilog device - - - - - bsim4v30pMOS - - - - - capacitor - condensador - - - - capacitance in Farad - capacidad en Faradios - - - - initial voltage for transient simulation - tensión inicial para la simulación de transitorio - - - - - - - - - schematic symbol - símbolo de esquema - - - - Capacitor - Condensador - - - - current controlled current source - fuente de intensidad controlada por intensidad - - - - - - forward transfer factor - factor de transferencia directa - - - - - - - - - - - - - - - delay time - temps de retardo - - - - Current Controlled Current Source - Fuene de Intensidad Controlada por Intensidad - - - - current controlled voltage source - fuente de tensión controlada por intensidad - - - - Current Controlled Voltage Source - Fuente de Tensión Controlada por Intensidad - - - - circulator - circulador - - - - reference impedance of port 1 - impedancia de referencia de la conexión 1 - - - - reference impedance of port 2 - impedancia de referencia de la conexión 2 - - - - reference impedance of port 3 - impedancia de referencia de la conexión 3 - - - - Circulator - Circulador - - - - coaxial transmission line - línea de transmisión coaxial - - - - - relative permittivity of dielectric - permitividad relativa del dieléctrico - - - - - - specific resistance of conductor - resistencia específica del conductor - - - - - - relative permeability of conductor - permeabilidad relativa del conductor - - - - inner diameter of shield - diámetro interior de la pantalla - - - - diameter of inner conductor - diámetro del conductor interior - - - - - mechanical length of the line - longitud mecánica de la línea - - - - - - - loss tangent - tangente de perdidas - - - - Coaxial Line - Línea coaxial - - - - 1bit comparator verilog device - - - - - 1Bit Comparator - - - - - 2bit comparator verilog device - - - - - 2Bit Comparator - - - - - 4bit comparator verilog device - - - - - 4Bit Comparator - - - - - number of input ports - número de puertos de entrada - - - - - - - voltage of high level - tensión de alto nivel - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Error - Error - - - - Format Error: -Wrong line start! - Error de Formato: -¡Comienzo de línea equivocado! - - - - Format Error: -Unknown component! -%1 - -Do you make use of loadable components? - - - - - Format Error: -Wrong 'component' line format! - Error de Formato: -¡Formato de línea 'component' equivocado! - - - - coplanar line - línea coplanar - - - - - - - - - - - - - - name of substrate definition - nombre de la definición del sustrato - - - - - - - - - - - width of the line - ancho de la línea - - - - - - - width of a gap - ancho del gap - - - - - - - length of the line - longitud de la línea - - - - - - - material at the backside of the substrate - material de la parte trasera del sustrato - - - - use approximation instead of precise equation - usa aproximación en lugar de ecuación exacta - - - - Coplanar Line - Línea Coplanar - - - - ideal coupler - acoplador ideal - - - - coupling factor - factor de acoplamiento - - - - phase shift of coupling path in degree - desplazamiento de fase en grados - - - - Coupler - Acoplador - - - - coplanar gap - gap coplanar - - - - width of gap between the two lines - ancho del gap entre les dos línees - - - - Coplanar Gap - Gap Coplanar - - - - coplanar open - coplanar abierto - - - - width of gap at end of line - ancho del gap al final de la línea - - - - Coplanar Open - Coplanar Abierto - - - - coplanar short - coplanar corto - - - - Coplanar Short - Coplanar Corto - - - - coplanar step - pas coplanar - - - - - - width of line 1 - ancho de la línea 1 - - - - - - width of line 2 - ancho de la línea 2 - - - - distance between ground planes - distancia entre planos de tierra - - - - Coplanar Step - Paso Coplanar - - - - coupled transmission lines - - - - - characteristic impedance of even mode - - - - - characteristic impedance of odd mode - - - - - - - - electrical length of the line - longitud eléctrica de la línea - - - - relative dielectric constant of even mode - - - - - relative dielectric constant of odd mode - - - - - attenuation factor per length of even mode - - - - - attenuation factor per length of odd mode - - - - - Coupled Transmission Line - - - - - D flip flop with asynchron reset - Biestable D amb reset asíncrono - - - - D-FlipFlop - Biestable-D - - - - - dc simulation - simulación dc - - - - - - - relative tolerance for convergence - tolerancia relativa para converger - - - - - - - absolute tolerance for currents - tolerancia absoluta para les intensidades - - - - - - - absolute tolerance for voltages - tolerancia absoluta para les tensiones - - - - put operating points into dataset - poner els punts de operación en el conjunto de dades - - - - - - - maximum number of iterations until error - numero máximo de les iteraciones antes de un error - - - - save subcircuit nodes into dataset - grabar els nodos del subcircuit en el conjunto de dades - - - - preferred convergence algorithm - algoritmo de convergencia preferido - - - - - - method for solving the circuit matrix - método para resolver la matriz del circuito - - - - dc block - bloque dc - - - - dc Block - Bloque dc - - - - dc feed - alimentación dc - - - - dc Feed - Alimentación dc - - - - D flip flop with set and reset verilog device - - - - - - - - cross coupled gate transfer function high scaling factor - - - - - - - - cross coupled gate transfer function low scaling factor - - - - - - - - cross coupled gate delay - - - - - D-FlipFlop w/ SR - - - - - diac (bidirectional trigger diode) - - - - - - (bidirectional) breakover voltage - - - - - (bidirectional) breakover current - - - - - - - parasitic capacitance - - - - - - - - - emission coefficient - coeficiente de emisión - - - - - - intrinsic junction resistance - - - - - Diac - - - - - - digital simulation - simulación digital - - - - type of simulation - tipo de simulación - - - - duration of TimeList simulation - duración de la simulación de la Lista de Tiempos - - - - netlist format - - - - - - digital source - fuente digital - - - - - number of the port - número de la conexión - - - - initial output value - valor inicial de salida - - - - list of times for changing output value - llista de veces que se cambia el valor de salida - - - - diode - diodo - - - - - - zero-bias junction capacitance - capacidad de polarización de la unión - - - - - - - - grading coefficient - coeficiente de graduación - - - - - - - junction potential - potencial de la unión - - - - linear capacitance - capacidad lineal - - - - recombination current parameter - parámetro de recombinación de la corriente - - - - emission coefficient for Isr - coeficiente de emisión para lsr - - - - ohmic series resistance - resistencia serie en óhmios - - - - - - transit time - temps de tránsito - - - - high-injection knee current (0=infinity) - - - - - - - reverse breakdown voltage - tensión de ruptura inversa - - - - - - current at reverse breakdown voltage - corriente en la tensión de ruptura inversa - - - - Bv linear temperature coefficient - coeficiente de temperatura lineal Bv - - - - Rs linear temperature coefficient - coeficiente de temperatura lineal Rs - - - - Tt linear temperature coefficient - coeficiente de temperatura lineal Tt - - - - Tt quadratic temperature coefficient - coeficiente de temperatura cuadrático Tt - - - - M linear temperature coefficient - coeficiente de temperatura lineal M - - - - M quadratic temperature coefficient - coeficiente de temperatura cuadrático M - - - - - default area for diode - area predeterminada para el diodo - - - - Diode - Diodo - - - - data voltage level shifter (digital to analogue) verilog device - - - - - - voltage level - - - - - - time delay - - - - - D2A Level Shifter - - - - - data voltage level shifter (analogue to digital) verilog device - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - V - - - - - A2D Level Shifter - - - - - 2to4 demultiplexer verilog device - - - - - 2to4 Demux - - - - - 3to8 demultiplexer verilog device - - - - - 3to8 Demux - - - - - 4to16 demultiplexer verilog device - - - - - 4to16 Demux - - - - - externally controlled voltage source - - - - - - voltage in Volts - tensión en Voltios - - - - Externally Controlled Voltage Source - - - - - EPFL-EKV MOS 2.6 verilog device - - - - - long = 1, short = 2 - - - - - length parameter - - - - - - - - - - - - - m - - - - - Width parameter - - - - - parallel multiple device number - - - - - series multiple device number - - - - - gate oxide capacitance per unit area - - - - - F/m**2 - - - - - metallurgical junction depth - - - - - channel width correction - - - - - channel length correction - - - - - long channel threshold voltage - - - - - body effect parameter - - - - - V**(1/2) - - - - - bulk Fermi potential - - - - - - - transconductance parameter - parámetro de transconductancia - - - - - A/V**2 - - - - - mobility reduction coefficient - - - - - - - - - - - - - 1/V - - - - - mobility coefficient - - - - - - - V/m - - - - - - longitudinal critical field - - - - - depletion length coefficient - - - - - narrow-channel effect coefficient - - - - - reverse short channel charge density - - - - - A*s/m**2 - - - - - characteristic length - - - - - threshold voltage temperature coefficient - - - - - - - - - - - - - V/K - - - - - mobility temperature coefficient - - - - - Longitudinal critical field temperature exponent - - - - - Ibb temperature coefficient - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1/K - - - - - heavily doped diffusion length - - - - - drain/source diffusion sheet resistance - - - - - Ohm/square - - - - - source contact resistance - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Ohm - Ohm - - - - drain contact resistance - - - - - gate to source overlap capacitance - - - - - - - - F/m - - - - - gate to drain overlap capacitance - - - - - gate to bulk overlap capacitance - - - - - first impact ionization coefficient - - - - - 1/m - - - - - second impact ionization coefficient - - - - - saturation voltage factor for impact ionization - - - - - area related theshold voltage mismatch parameter - - - - - V*m - - - - - area related gain mismatch parameter - - - - - area related body effect mismatch parameter - - - - - sqrt(V)*m - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - F - - - - - - diode relative area - - - - - charge partition parameter - - - - - - - - - - - parameter measurement temperature - temperatura de medida del parámetro - - - - - - - - - - Celsius - - - - - EPFL-EKV NMOS 2.6 - - - - - EPFL-EKV PMOS 2.6 - - - - - equation defined device - - - - - type of equations - - - - - number of branches - - - - - - current equation - - - - - - charge equation - - - - - Equation Defined Device - - - - - equation - ecuación - - - - - - Equation - Ecuación - - - - put result into dataset - poner els resultados en el conjunto de dades - - - - externally driven transient simulation - - - - - - integration method - método de integración - - - - - order of integration method - orden del método de integración - - - - - initial step size in seconds - tamaño del pas inicial en segundos - - - - - minimum step size in seconds - tamaño del pas mínimo en segundos - - - - - relative tolerance of local truncation error - tolerancia relativa del error de redondeo local - - - - - absolute tolerance of local truncation error - tolerancia absoluta del error de redondeo local - - - - - overestimation of local truncation error - sobrestimación del error de redondeo local - - - - - relax time step raster - - - - - - perform an initial DC analysis - realizar un análisis DC inicial - - - - - maximum step size in seconds - - - - - External transient simulation - - - - - 1bit full adder verilog device - - - - - 1Bit FullAdder - - - - - 2bit full adder verilog device - - - - - 2Bit FullAdder - - - - - gated D latch verilog device - - - - - Gated D-Latch - - - - - 4bit Gray to binary converter verilog device - - - - - 4Bit Gray2Bin - - - - - ground (reference potential) - tierra (potencial de referencia) - - - - Ground - Tierra - - - - gyrator (impedance inverter) - girador (inversor de impendancia) - - - - gyrator ratio - porcentaje de girador - - - - Gyrator - Girador - - - - 1bit half adder verilog device - - - - - 1Bit HalfAdder - - - - - Harmonic balance simulation - Simulació de equilibrio armónico - - - - number of harmonics - número de armónicos - - - - Harmonic balance - Equilibrio armónico - - - - HBT model by Ferdinand-Braun-Institut (FBH), Berlin - - - - - - - - Ignored - - - - - Device operating temperature, Celsius - - - - - Thermal resistance, K/W - - - - - - - - - - - - - - Thermal capacitance - - - - - Scaling factor, number of emitter fingers - - - - - Length of emitter finger, m - - - - - Width of emitter finger, m - - - - - Forward saturation current density, A/um^2 - - - - - Forward current emission coefficient - - - - - Forward thermal activation energy, V, (0 == disables temperature dependence) - - - - - B-E leakage saturation current density, A/um^2 - - - - - B-E leakage emission coefficient - - - - - Limiting resistor of B-E leakage diode, Ohm - - - - - B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - 2nd B-E leakage saturation current density, A/um^2 - - - - - 2nd B-E leakage emission coefficient - - - - - 2nd Limiting resistor of B-E leakage diode, Ohm - - - - - 2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Reverse saturation current density, A/um^2 - - - - - Reverse current emission coefficient - - - - - Reverse thermal activation energy, V, (0 == disables temperature dependence) - - - - - Fraction of Cjc that goes to internal base node - - - - - B-C leakage saturation current density, A/um^2 (0. switches off diode) - - - - - B-C leakage emission coefficient (0. switches off diode) - - - - - Limiting resistor of B-C leakage diode, Ohm - - - - - B-C leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Ideal forward beta - - - - - Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence) - - - - - Ideal reverse beta - - - - - Forward Early voltage, V, (0 == disables Early Effect) - - - - - Reverse Early voltage, V, (0 == disables Early Effect) - - - - - Forward high-injection knee current, A, (0 == disables Webster Effect) - - - - - Reverse high-injection knee current, A, (0 == disables Webster Effect) - - - - - C-E breakdown exponent, (0 == disables collector break-down) - - - - - C-E breakdown voltage, V, (0 == disables collector break-down) - - - - - C-E breakdown factor, (0 == disables collector break-down) - - - - - B-E breakdown voltage, V, (0 == disables emitter break-down) - - - - - Ideal reverse transit time, s - - - - - Extrinsic BC diffusion capacitance, F - - - - - Ideal forward transit time, s - - - - - Temperature coefficient of forward transit time - - - - - Excess transit time coefficient at base push-out - - - - - Smoothing parameter for Thcs - - - - - B-E zero-bias depletion capacitance, F/um^2 - - - - - B-E junction exponential factor - - - - - B-E junction built-in potential, V - - - - - B-C zero-bias depletion capacitance, F/um^2 - - - - - B-C junction exponential factor - - - - - B-C junction built-in potential, V - - - - - not used - - - - - Minimum B-C depletion capacitance (Vbc dependence), F/um^2 - - - - - Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction) - - - - - Fraction of Cmin, lower limit of BC capacitance (Ic dependence) - - - - - Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out) - - - - - Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out) - - - - - Slope of Jk at high currents , Ohm*um^2 - - - - - Voltage shift of base push-out onset, V - - - - - Collector resistance, Ohm/finger - - - - - Emitter resistance, Ohm/finger - - - - - Extrinsic base resistance, Ohm/finger - - - - - Inner Base ohmic resistance, Ohm/finger - - - - - Collector inductance, H - - - - - Emitter inductance, H - - - - - Base inductance, H - - - - - Extrinsic B-C capacitance, F - - - - - Extrinsic base capacitance, F - - - - - Extrinsic collector capacitance, F - - - - - - Flicker-noise coefficient - - - - - - Flicker-noise exponent - - - - - - Flicker-noise frequency exponent - - - - - Burst noise coefficient - - - - - Burst noise exponent - - - - - Burst noise corner frequency, Hz - + + + + voltage of high level + tensión de alto nivel + + - Ambient temperature at which the parameters were determined - - - - - FBH HBT - - - - - HICUM Level 0 v1.12 verilog device - - - + + + + + + + + + + + - - - - (Modified) saturation current - - - - - - - - Non-ideality coefficient of forward collector current - - - - - - - - Non-ideality coefficient of reverse collector current - - - - - - - - - - - - - - - - forward Early voltage (normalization volt.) - - - - - - - - forward d.c. high-injection roll-off current - - - - - - - - inverse d.c. high-injection roll-off current - - - - - - - - high-injection correction current - - - - - - - high-injection correction factor - - - - - - - - BE saturation current - - - - - - - - BE non-ideality factor - - - - - - - - BE recombination saturation current - - - - - - - - BE recombination non-ideality factor - - - - - - - - BC saturation current - - - - - - - - BC non-ideality factor - - - - - - - - Zero-bias BE depletion capacitance - - - - - - - - BE built-in voltage - - - - - - - - BE exponent factor - - - - - - - - Ratio of maximum to zero-bias value - - - - - - - - low current transit time at Vbici=0 - - - - - - - - Base width modulation contribution - - - - - - - - SCR width modulation contribution - - - - - - - - Storage time in neutral emitter - - - - - - - - Exponent factor for emitter transit time - - - - - - - - Saturation time at high current densities - - - - - - - - Smoothing factor for current dependence - - - - - - - - Storage time at inverse operation - - - - - - - - Low-field collector resistance under emitter - - - - - - - - Voltage dividing ohmic and satur.region - + + + + + + + + + + + + + + + + + + Error + Error - - - - - - - - - Punch-through voltage - + + Format Error: +Wrong line start! + Error de Formato: +¡Comienzo de línea equivocado! - - - - - Saturation voltage + + Format Error: +Unknown component! +%1 + +Do you make use of loadable components? - - - - - Total zero-bias BC depletion capacitance - + + Format Error: +Wrong 'component' line format! + Error de Formato: +¡Formato de línea 'component' equivocado! - - - - - BC built-in voltage - + + coplanar line + línea coplanar - - - - - BC exponent factor - + + + + + + + + + + + + name of substrate definition + nombre de la definición del sustrato - - - - Punch-through voltage of BC junction - - - - - - - - Zero-bias external BC depletion capacitance - - - - - - - - External BC built-in voltage - - - - - - - - External BC exponent factor - - - - - - - - Split factor = Cjci0/Cjc0 - + + + + + + + + width of the line + ancho de la línea - - - - Internal base resistance at zero-bias - + + + + width of a gap + ancho del gap - - - - - Geometry factor - + + + + + length of the line + longitud de la línea - - - - - - - - - External base series resistance - + + + + material at the backside of the substrate + material de la parte trasera del sustrato - - - - - - - - - Emitter series resistance - + use approximation instead of precise equation + usa aproximación en lugar de ecuación exacta - - - - - - - - - - External collector series resistance - + + Coplanar Line + Línea Coplanar - - - - - - - - - - Substrate transistor transfer saturation current - + + ideal coupler + acoplador ideal - - - - - Substrate transistor transfer current non-ideality factor - + + coupling factor + factor de acoplamiento - - - - SC saturation current - + phase shift of coupling path in degree + desplazamiento de fase en grados - - - - - SC non-ideality factor - + + Coupler + Acoplador - - - - - Zero-bias SC depletion capacitance - + + coplanar gap + gap coplanar - - - - - SC built-in voltage - + + width of gap between the two lines + ancho del gap entre les dos línees - - - - - External SC exponent factor - + + Coplanar Gap + Gap Coplanar - - - - - SC punch-through voltage - + + coplanar open + coplanar abierto - - - - - Collector-base isolation (overlap) capacitance - + + width of gap at end of line + ancho del gap al final de la línea - - - - - Emitter-base oxide capacitance - + + Coplanar Open + Coplanar Abierto - - - - - Exponent factor - + + coplanar short + coplanar corto - - - - - Prefactor - + + Coplanar Short + Coplanar Corto - - - - - M^(1-AF) - + + coplanar step + pas coplanar - - - - - flicker noise exponent factor - + + + + width of line 1 + ancho de la línea 1 - - - - Bandgap-voltage - + + + width of line 2 + ancho de la línea 2 - - - - - Effective emitter bandgap-voltage - + + distance between ground planes + distancia entre planos de tierra - - - - - Effective collector bandgap-voltage - + + Coplanar Step + Paso Coplanar - - - - - Effective substrate bandgap-voltage + + coupled transmission lines - - - - - Coefficient K1 in T-dependent bandgap equation + + characteristic impedance of even mode - - - - - Coefficient K2 in T-dependent bandgap equation + + characteristic impedance of odd mode - - - - - Frist-order TC of tf0 - + + + + + electrical length of the line + longitud eléctrica de la línea - - - - - Second-order TC of tf0 + + relative dielectric constant of even mode - - - - - - 1/K^2 + + relative dielectric constant of odd mode - - - - - - - - Exponent coefficient in transfer current temperature dependence + attenuation factor per length of even mode - - - - Exponent coefficient in BE junction current temperature dependence + attenuation factor per length of odd mode - - - - - TC of epi-collector diffusivity + + Coupled Transmission Line - - - - - Relative TC of satur.drift velocity - + + D flip flop with asynchron reset + Biestable D amb reset asíncrono - - - - - Relative TC of vces - + + D-FlipFlop + Biestable-D - - - - - TC of internal base resistance - + + + dc simulation + simulación dc - - - - - TC of external base resistance - + + + + + relative tolerance for convergence + tolerancia relativa para converger - - - - TC of external collector resistance - + + + + absolute tolerance for currents + tolerancia absoluta para les intensidades - - - - TC of emitter resistances - + + + + absolute tolerance for voltages + tolerancia absoluta para les tensiones - - - TC of avalanche prefactor - - - - - - - TC of avalanche exponential factor - + put operating points into dataset + poner els punts de operación en el conjunto de dades - - - - Flag for self-heating calculation - + + + + maximum number of iterations until error + numero máximo de les iteraciones antes de un error - - - - - - - - - Thermal resistance - - - - - - - - - - - - K/W - + save subcircuit nodes into dataset + grabar els nodos del subcircuit en el conjunto de dades - - - - Ws/K - - - - - - - - Temperature for which parameters are valid - + preferred convergence algorithm + algoritmo de convergencia preferido - - - - - - - - - C - + + + + method for solving the circuit matrix + método para resolver la matriz del circuito - - - - - Temperature change for particular transistor - + + dc block + bloque dc - - - - - - - - - K - + + dc Block + Bloque dc - - npn HICUM L0 v1.12 - + + dc feed + alimentación dc - - pnp HICUM L0 v1.12 - + + dc Feed + Alimentación dc - - HICUM Level 2 v2.22 verilog device + + D flip flop with set and reset verilog device - - - - - GICCR constant + + + + cross coupled gate transfer function high scaling factor - - - - - A^2s + + + + + cross coupled gate transfer function low scaling factor - - - - - Zero-bias hole charge + + + + cross coupled gate delay - - - - - - - - - Coul + + D-FlipFlop w/ SR - - - - - - High-current correction for 2D and 3D effects + + diac (bidirectional trigger diode) - - - - - - Emitter minority charge weighting factor in HBTs + + + (bidirectional) breakover voltage - - - - - Collector minority charge weighting factor in HBTs + (bidirectional) breakover current - - - - - B-E depletion charge weighting factor in HBTs + + + parasitic capacitance - - - - - - B-C depletion charge weighting factor in HBTs - + + + + + + emission coefficient + coeficiente de emisión - - - - - Internal B-E saturation current + + + intrinsic junction resistance - - - - - - Internal B-E current ideality factor + + Diac - - - - - - Internal B-E recombination saturation current - + + + digital simulation + simulación digital - - - - - - Internal B-E recombination current ideality factor - + + type of simulation + tipo de simulación - - - - - Peripheral B-E saturation current - + duration of TimeList simulation + duración de la simulación de la Lista de Tiempos - - - - - - Peripheral B-E current ideality factor + + netlist format - - - - - - Peripheral B-E recombination saturation current - + + + digital source + fuente digital - - - - - - Peripheral B-E recombination current ideality factor - + + + number of the port + número de la conexión - - - - - Non-ideality factor for III-V HBTs - + initial output value + valor inicial de salida - - - - Base current recombination time constant at B-C barrier for high forward injection - + list of times for changing output value + llista de veces que se cambia el valor de salida - - - - - - Internal B-C saturation current - + + diode + diodo - - - - - - Internal B-C current ideality factor - + + + + zero-bias junction capacitance + capacidad de polarización de la unión - - - - - External B-C saturation current - - - - - - - - - External B-C current ideality factor - + + + + + grading coefficient + coeficiente de graduación - - - - - B-E tunneling saturation current - + + + + junction potential + potencial de la unión - - - - - - Exponent factor for tunneling current - + + linear capacitance + capacidad lineal - - - - Specifies the base node connection for the tunneling current - + recombination current parameter + parámetro de recombinación de la corriente - - - - - Avalanche current factor - - - - - - - - - Exponent factor for avalanche current - - - - - - - - - Relative TC for FAVL - - - - - - - - - Relative TC for QAVL - - - - - - - - - Zero bias internal base resistance - - - - - - - - - Factor for geometry dependence of emitter current crowding - + emission coefficient for Isr + coeficiente de emisión para lsr - - - - - Correction factor for modulation by B-E and B-C space charge layer - + ohmic series resistance + resistencia serie en óhmios - - - - - Ratio of HF shunt to total internal capacitance (lateral NQS effect) - + + + transit time + temps de tránsito - - - - - Ration of internal to total minority charge + high-injection knee current (0=infinity) - - - - - - Forward ideality factor of substrate transfer current - + + + + reverse breakdown voltage + tensión de ruptura inversa - - - - - C-S diode saturation current - + + + current at reverse breakdown voltage + corriente en la tensión de ruptura inversa - - - - - - Ideality factor of C-S diode current - + + Bv linear temperature coefficient + coeficiente de temperatura lineal Bv - - - - - Transit time for forward operation of substrate transistor - - - - - - - - - Substrate series resistance - + Rs linear temperature coefficient + coeficiente de temperatura lineal Rs - - - - - - Substrate shunt capacitance - + + Tt linear temperature coefficient + coeficiente de temperatura lineal Tt - - - - - - Internal B-E zero-bias depletion capacitance - + + Tt quadratic temperature coefficient + coeficiente de temperatura cuadrático Tt - - - - - - Internal B-E built-in potential - + + M linear temperature coefficient + coeficiente de temperatura lineal M - - - - - - Internal B-E grading coefficient - + + M quadratic temperature coefficient + coeficiente de temperatura cuadrático M - - - - - - Ratio of maximum to zero-bias value of internal B-E capacitance - + + + default area for diode + area predeterminada para el diodo - - - - - - Peripheral B-E zero-bias depletion capacitance - + + Diode + Diodo - - - - - - Peripheral B-E built-in potential + + data voltage level shifter (digital to analogue) verilog device - - - - - Peripheral B-E grading coefficient + + voltage level - - - - - Ratio of maximum to zero-bias value of peripheral B-E capacitance + + time delay - - - - - - Internal B-C zero-bias depletion capacitance + + D2A Level Shifter - - - - - - Internal B-C built-in potential + + data voltage level shifter (analogue to digital) verilog device + + + + + + + + + + + + + + + + + + + - - - - - Internal B-C grading coefficient + + + V - - - - - - Internal B-C punch-through voltage + + A2D Level Shifter - - - - - - External B-C zero-bias depletion capacitance + + 2to4 demultiplexer verilog device - - - - - - External B-C built-in potential + + 2to4 Demux - - - - - - External B-C grading coefficient + + 3to8 demultiplexer verilog device - - - - - - External B-C punch-through voltage + + 3to8 Demux - - - - - Partitioning factor of parasitic B-C cap + + 4to16 demultiplexer verilog device - - - - - Partitioning factor of parasitic B-E cap + + 4to16 Demux - - - - - - C-S zero-bias depletion capacitance + + externally controlled voltage source - - - - - - C-S built-in potential - + + + voltage in Volts + tensión en Voltios - - - - - - C-S grading coefficient + + Externally Controlled Voltage Source - - - - - - C-S punch-through voltage + + EPFL-EKV MOS 2.6 verilog device - - - - - - Low current forward transit time at VBC=0V + + long = 1, short = 2 - - - - - - Time constant for base and B-C space charge layer width modulation + + length parameter + - - - - Time constant for modelling carrier jam at low VCE - - - + - - - - - Neutral emitter storage time - - - - - - - - Exponent factor for current dependence of neutral emitter storage time + + + + + m - - - - - - Saturation time constant at high current densities + + Width parameter - - - - - Smoothing factor for current dependence of base and collector transit time + parallel multiple device number - - - - - Partitioning factor for base and collector portion + series multiple device number - - - - - Internal collector resistance at low electric field - - - - - - - - - Voltage separating ohmic and saturation velocity regime + gate oxide capacitance per unit area - - - - - - Internal C-E saturation voltage + + F/m**2 - - - - - - Collector punch-through voltage + + metallurgical junction depth - - - - - Storage time for inverse operation + channel width correction - - - - - Total parasitic B-E capacitance + channel length correction - - - - - Total parasitic B-C capacitance + long channel threshold voltage - - - - - Factor for additional delay time of minority charge - - - - - - - - - Factor for additional delay time of transfer current + body effect parameter - - - - - Flag for turning on and off of vertical NQS effect + + V**(1/2) - - - - - Flicker noise coefficient + bulk Fermi potential - - - - - - Flicker noise exponent factor - + + + + transconductance parameter + parámetro de transconductancia - - - - - Flag for determining where to tag the flicker noise source + + + A/V**2 - - - - - Scaling factor for collector minority charge in direction of emitter width + mobility reduction coefficient - - - - - - Scaling factor for collector minority charge in direction of emitter length + + + + + + 1/V - - - - - Bandgap voltage extrapolated to 0 K + mobility coefficient + - - - - - First order relative TC of parameter T0 + + V/m - - - - - - Second order relative TC of parameter T0 + + + longitudinal critical field - - - - - - Temperature exponent for RCI0 + + depletion length coefficient - - - - - Relative TC of saturation drift velocity + narrow-channel effect coefficient - - - - - - Relative TC of VCES + + reverse short channel charge density - - - - - - Temperature exponent of internal base resistance + + A*s/m**2 - - - - - Temperature exponent of external base resistance + characteristic length - - - - - - Temperature exponent of external collector resistance + + threshold voltage temperature coefficient - - - - - - Temperature exponent of emitter resistance + + V/K - - - - - Temperature exponent of mobility in substrate transistor transit time + mobility temperature coefficient - - - - Effective emitter bandgap voltage - - - - - - - - Effective collector bandgap voltage - - - - - - - - Effective substrate bandgap voltage - - - - - - - - Coefficient K1 in T-dependent band-gap equation + Longitudinal critical field temperature exponent - - - - Coefficient K2 in T-dependent band-gap equation + Ibb temperature coefficient - - - - - Exponent coefficient in B-E junction current temperature dependence + + 1/K - - - - - Relative TC of forward current gain for V2.1 model + heavily doped diffusion length - - - - Flag for turning on and off self-heating effect - - - - - - - - J/W + drain/source diffusion sheet resistance - - - - - Flag for compatibility with v2.1 model (0=v2.1) + + Ohm/square - - - - - Temperature at which parameters are specified + source contact resistance + - - - - - Temperature change w.r.t. chip temperature for particular transistor - - - - - HICUM L2 v2.22 - + + + + + + + + + + + Ohm + Ohm - - HICUM Level 0 v1.2 verilog device + + drain contact resistance - - - - reverse Early voltage (normalization volt.) + + gate to source overlap capacitance - - - - flag for turning on base related critical current + + + + + F/m - - - - Smoothing factor for the d.c. injection width + + gate to drain overlap capacitance - - - - BE charge built-in voltage for d.c. transfer current + + gate to bulk overlap capacitance - - - charge BE exponent factor for d.c. transfer current + first impact ionization coefficient - - - - BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current + + 1/m - - - TC of iqf + + second impact ionization coefficient - - - - Exponent factor for temperature dependent thermal resistance + + saturation voltage factor for impact ionization - - npn HICUM L0 v1.2 + + area related theshold voltage mismatch parameter - - pnp HICUM L0 v1.2 + + V*m - - HICUM Level 0 v1.2g verilog device + + area related gain mismatch parameter - - high-injection roll-off current + + area related body effect mismatch parameter - - TC of iqf (bandgap coefficient of zero bias hole charge) + + sqrt(V)*m - - TC of avalanche prefactor, identical to alfav of Hicum/L2 + + + + + + + + + + + A + + - TC of avalanche exponential factor, identical to alqav of Hicum/L2 + + + + + F - - Emitter part coefficient of the zero bias hole charge temperature variation + + + diode relative area - - Collector part coefficient of the zero bias hole charge temperature variation + + charge partition parameter - Bandgap TC parameter of ver - + + + + + + + parameter measurement temperature + temperatura de medida del parámetro - - Bandgap TC parameter of vef + + + + + + + + Celsius - - Specific recombination current at the BC barrier for high forward injection + + EPFL-EKV NMOS 2.6 - - npn HICUM L0 v1.2g + + EPFL-EKV PMOS 2.6 - - pnp HICUM L0 v1.2g + + equation defined device - - HICUM Level 0 v1.3 verilog device + + type of equations - - Flag for using third order solution for transfer current + + number of branches - - bias dependence for reverse Early voltage + + + current equation - - Flag for turning temperature dependence of tef0 on and off + + + charge equation - - TC of Reverse Early voltage + + Equation Defined Device - - TC of AVER - + + equation + ecuación - - Bandgap difference between base and BE-junction - + + + + Equation + Ecuación - - Frist-order TC of iqfh - + + put result into dataset + poner els resultados en el conjunto de dades - - Second-order TC of iqfh + + externally driven transient simulation - - npn HICUM L0 v1.3 - + + + integration method + método de integración - - pnp HICUM L0 v1.3 - + + + order of integration method + orden del método de integración - - HICUM Level 2 v2.1 verilog device - + + + initial step size in seconds + tamaño del pas inicial en segundos - - Partitioning factor of parasitic B-C capacitance - + + + minimum step size in seconds + tamaño del pas mínimo en segundos - - Noise factor for internal base resistance - + + + relative tolerance of local truncation error + tolerancia relativa del error de redondeo local - - HICUM L2 v2.1 - + + + absolute tolerance of local truncation error + tolerancia absoluta del error de redondeo local - - HICUM Level 2 v2.23 verilog device - + + + overestimation of local truncation error + sobrestimación del error de redondeo local - - HICUM L2 v2.23 + + + relax time step raster - - HICUM Level 2 v2.24 verilog device - + + + perform an initial DC analysis + realizar un análisis DC inicial - - HICUM L2 v2.24 + + + maximum step size in seconds - - hicumL2V2p31n verilog device + + External transient simulation - - Weight factor for the low current minority charge + + 1bit full adder verilog device - - Parameter describing the slope of hjEi(VBE) + + 1Bit FullAdder - - Smoothing parameter for hjEi(VBE) at high voltage + + 2bit full adder verilog device - - Time constant for modeling carrier jam at low VCE + + 2Bit FullAdder - - Barrier voltage + + gated D latch verilog device - - Normalization parameter + + Gated D-Latch - - Smoothing parameter for barrier voltage + + 4bit Gray to binary converter verilog device - - fitting factor for critical current + + 4Bit Gray2Bin - - Flag for turning on and off of correlated noise implementation - + + ground (reference potential) + tierra (potencial de referencia) - - Emitter resistance flicker noise coefficient - + + Ground + Tierra - - Emitter resistance flicker noise exponent factor - + + gyrator (impedance inverter) + girador (inversor de impendancia) - - Bandgap difference between B and B-E junction used for hjEi0 and hf0 - + + gyrator ratio + porcentaje de girador - - Temperature coefficient for ahjEi - + + Gyrator + Girador - - Temperature coefficient for hjEi0 + + 1bit half adder verilog device - - Temperature coefficient for Rth + + 1Bit HalfAdder - - First order relative TC of parameter Rth - + + Harmonic balance simulation + Simulació de equilibrio armónico - - HICUM L2 V2.31 - + + number of harmonics + número de armónicos + + + + Harmonic balance + Equilibrio armónico @@ -12101,7 +7796,7 @@ Wrong 'component' line format! - + ERROR: No file name in SPICE component "%1". ERROR: Sin nombre de fitxer en el componente SPICE "%1". @@ -12524,11 +8219,15 @@ Wrong 'component' line format! Fuente de Corriente Controlada por Tensión - voltage controlled voltage source fuente de tensión controlada por tensión + + + voltage controlled resistor + + resistance gain @@ -12563,7 +8262,7 @@ Wrong 'component' line format! - + ERROR: No file name in %1 component "%2". @@ -12726,7 +8425,7 @@ Wrong 'component' line format! - + invalid inválido @@ -12835,7 +8534,7 @@ Wrong 'component' line format! - + Successfully exported @@ -12858,8 +8557,8 @@ Use PNG, JPEG or SVG graphics! - - + + verilog-a user devices @@ -12918,14 +8617,14 @@ Use PNG, JPEG or SVG graphics! - + diagrams - + paintings @@ -13043,16 +8742,16 @@ Set the Octave location on the application settings. - + - + untitled sinTítulo - + Format Error: 'Painting' field is not closed! @@ -13227,17 +8926,17 @@ Unknown field! ERROR: No puedo cargar el subcircuit "%1". - + WARNING: Skipping library component "%1". - - ERROR: Cannot load library component "%1". - ERROR: No puedo cargar el componente de la librería "%1". + + ERROR: "%1": Cannot load library component "%2" from "%3" + - + WARNING: Ignore simulation component in subcircuit "%1". AVISO: Ignora simulación de componente en el subcircuit "%1". @@ -13247,7 +8946,7 @@ Unknown field! - + ERROR: Only one digital simulation allowed. ERROR: Sólo está permitida una simulación digital. @@ -13371,25 +9070,53 @@ a substrate with lower permittivity and larger height. ¡No puedo guardar la configuración! - - Cannot save settings file ! + + Cannot save settings file ! + + + + + Quarter wave filters do not allow low-pass nor high-pass masks + + + + + + QucsActiveFilter + + + &File + &Fitxer + + + + E&xit + &Salir + + + + &View + &Ver + + + + &Console - - - QucsActiveFilter - - &File - &Fitxer + + Enables/disables the filter calculation console + - - E&xit - &Salir + + Console + +Enables/disables the filter calculation console + - + &Help &Ajuda @@ -13409,30 +9136,30 @@ a substrate with lower permittivity and larger height. Acerca de Qt... - - + + Passband attenuation, Ap (dB) - + Stopband attenuation, As (dB) - - Cuttof frequency, Fc (Hz) + + Cutoff frequency, Fc (Hz) - - + + Stopband frequency, Fs (Hz) - + Passband ripple Rp(dB) @@ -13442,7 +9169,7 @@ a substrate with lower permittivity and larger height. - + Filter order @@ -13492,27 +9219,61 @@ a substrate with lower permittivity and larger height. - - Calculation console + + Low Pass - - Filter topology + + General filter amplitude-frequency response - - Filter type: - Tipus de filtro: + + + + Unable to implement filter with such parameters and topology +Change parameters and/or topology and try again! + + + + + + Filter calculation was successful + - LowPass + Filter calculation terminated with error! + + + + + Filter calculation terminated with error + + + + + Lower cutoff frequency, Fl (Hz) + + + + + Copyright (C) 2014, 2015 by + Copyright (C) 2005, 2006 por {2014, 2015 ?} + + + + Filter topology + Filter type: + Tipus de filtro: + + + High Pass @@ -13538,62 +9299,45 @@ a substrate with lower permittivity and larger height. - + Cauer section - - General amplitude frequency response - - - - - Filter topology preview (one stage) - - - - + Filter parameters - + Transfer function and Topology - - General filter amplidure-frequency response - - - - + Filter topology preview - + Filter calculation console - + + + Ready. + Listo. + + + Upper cutoff frequency of band-pass/band-stop filter is less than lower. Unable to implement such filter. Change parameters and try again. - - - - Unable to implement filter with such parameters and topology -Change parapeters and/or topology and try again! - - - - + Unable to use Cauer section for Chebyshev or Butterworth frequency response. Try to use another topology. @@ -13609,40 +9353,28 @@ frequency response. Try to use another topology. Function will be implemented in future version - - - -Filter calculation was sucessfull - - - - - -Filter calculation terminated with error - - Upper cutoff frequency, Fu (Hz) - - Lower cuttoff frequency, Fl (Hz) + + Transient bandwidth, TW (Hz) - - Transient bandwidth, TW (Hz) + + Error! - + Active filter design - + About... Acerca de... @@ -13654,12 +9386,7 @@ Active Filter synthesis program - - Copyright (C) 2014 by - Copyright (C) 2005, 2006 por {2014 ?} - - - + About Qt Acerca de Qt @@ -13667,7 +9394,7 @@ Active Filter synthesis program QucsApp - + Schematic Esquema @@ -13683,42 +9410,42 @@ Active Filter synthesis program - + VHDL Sources Fuentes VHDL - - + + Verilog Sources - - + + Verilog-A Sources - - + + Octave Scripts - + Spice Files - + Any File Qualsevol Fitxer - + The schematic search path has been refreshed. @@ -13738,7 +9465,7 @@ Active Filter synthesis program Esquemas - + New Nou @@ -13823,13 +9550,13 @@ Active Filter synthesis program - + - + @@ -13852,7 +9579,7 @@ Active Filter synthesis program Error - + Cannot open "%1". No puedo abrir "%1". @@ -13864,8 +9591,16 @@ Active Filter synthesis program La librería está corrupta. - - + + + + + Search results + + + + + @@ -13884,13 +9619,18 @@ Active Filter synthesis program Información - + Default icon not found: %1.png - + + verilog-a user devices + + + + -port -conexiones @@ -13901,7 +9641,7 @@ Active Filter synthesis program - + The document contains unsaved changes! ¡El document contiene cambios no guardados! @@ -13909,7 +9649,7 @@ Active Filter synthesis program - + Do you want to save the changes before copying? @@ -13920,13 +9660,13 @@ Active Filter synthesis program - + &Save &Guardar - + Copy file @@ -13960,31 +9700,31 @@ Active Filter synthesis program - + Warning Aviso - + This will delete the file permanently! Continue ? ¡Esto eliminará el fitxer para siempre! ¿Continuo? - + No No - + - + Yes Si - + unknown @@ -14145,7 +9885,7 @@ Active Filter synthesis program - + @@ -14159,7 +9899,7 @@ Active Filter synthesis program Listo. - + Creating new text editor... Creando un nuevo editor de texts... @@ -14224,12 +9964,12 @@ Active Filter synthesis program - + Cancel Cancel·lar - + Cannot overwrite an open document No puedo sobreescribir un document abierto @@ -14244,7 +9984,7 @@ Active Filter synthesis program Guardando todos els fitxers... - + Closing file... Cerrando el fitxer... @@ -14268,10 +10008,6 @@ Active Filter synthesis program Open examples directory... - - OK - Acceptar - Printing... @@ -16218,94 +11954,6 @@ Acerca de Qt por Trolltech Warnings in last simulation! Press F5 Avisos en la última simulación! Pulsa F5 - - About... - Acerca de... - - - Qucs Version - Versión de Qucs - - - Quite Universal Circuit Simulator - Quite Universal Circuit Simulator - - - Copyright (C) - Copyright (C) - - - by Michael Margraf - por Michael Margraf - - - Simulator by Stefan Jahn - Simulador por Stefan Jahn - - - VHDL simulator 'FreeHDL' by Edwin Naroska and Marius Vollmer - Simulador VHDL 'FreeHDL' por Edwin Naroska y Marius Vollmer - - - Special thanks to Jens Flucke and Raimund Jacob - Agradecimiento especial a Jens Flucke y Raimund Jacob - - - Many thanks to Mike Brinson for correcting the VHDL output - Muchas gracias a Mike Brinson por corregir la salida VHDL - - - Translations: - Traducciones: - - - German by Stefan Jahn - Alemán por Stefan Jahn - - - Polish by Dariusz Pienkowski - Polaco por Dariusz Pienkowski - - - Romanian by Radu Circa - Rumano por Radu Circa - - - French by Vincent Habchi, F5RCS - Francés por Vincent Habchi, F5RC - - - Spanish by Jose L. Redrejo Rodriguez - Español por José L. Redrejo Rodríguez - - - Japanese by Toyoyuki Ishikawa - Japonés por Toyoyuki Ishikawa - - - Italian by Giorgio Luparia and Claudio Girardi - Italiano por Giorgio Luparia y Claudio Girardi - - - Hebrew by Dotan Nahum - Hebreo por Dotan Nahum - - - Swedish by Peter Landgren - Sueco por Peter Landgren - - - Turkish by Onur and Ozgur Cobanoglu - Turco por Onur y Ozgur Cobanoglu - - - Hungarian by Jozsef Bus - Húngaro por Jozsef Bus - - - Russian by Igor Gorbounov - Ruso por Igor Gorbounov - QucsAttenuator @@ -16576,7 +12224,7 @@ Editor de text muy simple para Qucs QucsFilter - + &File &Fitxer @@ -16616,7 +12264,7 @@ Editor de text muy simple para Qucs - + Filter type: Tipus de filtro: @@ -16652,29 +12300,29 @@ Editor de text muy simple para Qucs - + Corner frequency: Frecuencia de esquina: - + Stop frequency: Frecuencia de paro: - + Stop band frequency: Frecuencia de la banda de parada: - - + + Pass band ripple: Rizado del pas banda: - + Stop band attenuation: Atenuación de la banda de parada: @@ -16743,19 +12391,19 @@ Programa de síntexis de filtros - + Result: Resultado: - + Error Error - + Stop frequency must be greater than start frequency. La freqüència final debe ser mayor que la freqüència inicial. @@ -16910,17 +12558,22 @@ Enables/disables the table of contents Acerca de - + Component Selection Selección de Componente - - Search... - Buscar... + + Search Lib Components + - + + Clear + + + + Component Componente @@ -16935,7 +12588,7 @@ Enables/disables the table of contents Mostrar modelo - + About... Acerca de... @@ -16946,6 +12599,12 @@ Enables/disables the table of contents Gestor de librería para Qucs + + + Copyright (C) 2011-2015 Qucs Team + + + Copyright (C) 2005 by Michael Margraf @@ -16954,7 +12613,7 @@ Enables/disables the table of contents - + QucsLib Help @@ -16974,14 +12633,17 @@ Enables/disables the table of contents - - Search result - Resultado de la búsqueda + + + + + Search results + - + - + @@ -16990,13 +12652,13 @@ Enables/disables the table of contents Error - + Cannot open "%1". No puedo abrir "%1". - + @@ -17004,21 +12666,6 @@ Enables/disables the table of contents Library is corrupt. La librería está corrupta. - - - Search Library Component - - - - - Result - Resultado - - - - No appropriate component found. - No se ha encontrado el componente apropiado. - QucsSettingsDialog @@ -18034,7 +13681,7 @@ Edita els símboels de este esquema - + Error Error @@ -18052,7 +13699,7 @@ Set the admsXml location on the application settings. - + ERROR: Cannot create library file "%s". @@ -18061,83 +13708,46 @@ Set the admsXml location on the application settings. SearchDialog - - - - Dialog - - - - Text to search for Texto de búsqueda - - - - Text to replace with Texto a reemplazar - - - - Ask before replacing Preguntar antes de reemplazar - - - - Case sensitive Distingue mayúsculas - - - - Whole words only Sólo palabras completas - - - - Search backwards Búsqueda inversa - - - - Next - - - - - Close Tancar @@ -18151,32 +13761,6 @@ Set the admsXml location on the application settings. Search Text Texto de Búsqueda - - - The search result contains all components whose -name contains the search string. All libraries -are included in the search. - Los resultados de la búsqueda contienen todos los -componentes cuyos nombres tienen la cadena -de búsqueda. Todas les librerías están incluidas -en la búsqueda. - - - - Search string: - Cadena de búsqueda: - - - - Search - Buscar - - - - - Search result - Resultado de la búsqueda - SettingsDialog @@ -18619,7 +14203,7 @@ en la búsqueda. SymbolWidget - + Symbol: Símbolo: @@ -18628,6 +14212,13 @@ en la búsqueda. ! Drag n'Drop me ! ¡ Arrástrame y suéltame ! + + + Warning: Symbol '%1' missing in Qucs Library. +Drag and Drop may still work. +Please contact the developers. + + TextDoc diff --git a/qucs/translations/qucs_cs.ts b/qucs/translations/qucs_cs.ts index 33541ea2df..b58b3411cb 100644 --- a/qucs/translations/qucs_cs.ts +++ b/qucs/translations/qucs_cs.ts @@ -3529,62 +3529,6 @@ Resistor color code computation program - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - @@ -3740,10 +3684,6 @@ Resistor color code computation program - - - - polarity @@ -3948,10 +3888,6 @@ Resistor color code computation program - - - - @@ -4092,5709 +4028,1480 @@ Resistor color code computation program - - bsim3v34nMOS verilog device + + + + + + + + + + + simulation temperature + + + capacitor + kondenzátor + + capacitance in Farad + kapazita ve Faradech + + + initial voltage for transient simulation + počáteční napětí pro přechodovou simulaci + + + + + + + + schematic symbol + symbol v obvodu + + + + Capacitor + Kondenzátor + + + + current controlled current source + proudově řízený zdroj proudu + + + + + + forward transfer factor + faktor dopředného přenosu + + + + + + + + + + + + + + + delay time + doba prodlevy + + + + Current Controlled Current Source + proudově řízený zdroj proudu + + + + current controlled voltage source + proudově řízený zdroj napětí + + + + Current Controlled Voltage Source + proudově řízený zdroj napětí + + + + circulator + cirkulátor + + + + reference impedance of port 1 + referenční impedance na portu 1 + + + reference impedance of port 2 + referenční impedance na portu 2 + + + reference impedance of port 3 + referenční impedance na portu 3 + + + + Circulator + Cirkulátor + + + + coaxial transmission line + koaxiální vedení + + + + + relative permittivity of dielectric + relativní permitivita dielektrika + + + + + specific resistance of conductor + specifický odpor vodiče + + + + + relative permeability of conductor + relativní permeabilita vodiče + + + inner diameter of shield + vnitřní průměr vnějšího vodiče + + + diameter of inner conductor + průměr vnitřního vodiče + + + + mechanical length of the line + mechanická délka vedení + + + + + + loss tangent + dielektrický ztrátový úhel + + + + Coaxial Line + Koaxiální kabel + + + + 1bit comparator verilog device + + + + + 1Bit Comparator + + + + + 2bit comparator verilog device + + + + + 2Bit Comparator + + + + + 4bit comparator verilog device + + + + + 4Bit Comparator + + + + + number of input ports + počet vstupů + + - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - simulation temperature - - - - - bsim3v34nMOS - - - - - bsim3v34pMOS verilog device - - - - - bsim3v34pMOS - - - - - bsim4v30nMOS verilog device - - - - - bsim4v30nMOS - - - - - bsim4v30pMOS verilog device - - - - - bsim4v30pMOS - - - - - capacitor - kondenzátor - - - - capacitance in Farad - kapazita ve Faradech - - - - initial voltage for transient simulation - počáteční napětí pro přechodovou simulaci - - - - - - - - - schematic symbol - symbol v obvodu - - - - Capacitor - Kondenzátor - - - - current controlled current source - proudově řízený zdroj proudu - - - - - - forward transfer factor - faktor dopředného přenosu - - - - - - - - - - - - - - - delay time - doba prodlevy - - - - Current Controlled Current Source - proudově řízený zdroj proudu - - - - current controlled voltage source - proudově řízený zdroj napětí - - - - Current Controlled Voltage Source - proudově řízený zdroj napětí - - - - circulator - cirkulátor - - - - reference impedance of port 1 - referenční impedance na portu 1 - - - - reference impedance of port 2 - referenční impedance na portu 2 - - - - reference impedance of port 3 - referenční impedance na portu 3 - - - - Circulator - Cirkulátor - - - - coaxial transmission line - koaxiální vedení - - - - - relative permittivity of dielectric - relativní permitivita dielektrika - - - - - - specific resistance of conductor - specifický odpor vodiče - - - - - - relative permeability of conductor - relativní permeabilita vodiče - - - - inner diameter of shield - vnitřní průměr vnějšího vodiče - - - - diameter of inner conductor - průměr vnitřního vodiče - - - - - mechanical length of the line - mechanická délka vedení - - - - - - - loss tangent - dielektrický ztrátový úhel - - - - Coaxial Line - Koaxiální kabel - - - - 1bit comparator verilog device - - - - - 1Bit Comparator - - - - - 2bit comparator verilog device - - - - - 2Bit Comparator - - - - - 4bit comparator verilog device - - - - - 4Bit Comparator - - - - - number of input ports - počet vstupů - - - - - - - voltage of high level - napětí horní úrovně - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Error - Chyba - - - - Format Error: -Wrong line start! - Chyba formátu: -Neplatný začátek řádku! - - - - Format Error: -Unknown component! -%1 - -Do you make use of loadable components? - - - - - Format Error: -Wrong 'component' line format! - Chyba formátu: -Chybný řádkový formát 'component' ! - - - - coplanar line - koplanární vedení - - - - - - - - - - - - - - name of substrate definition - jméno definice substrátu - - - - - - - - - - - width of the line - šířka vodiče - - - - - - - width of a gap - šířka přerušení - - - - - - - length of the line - délka vodiče - - - - - - - material at the backside of the substrate - Materiál na zadní straně substrátu - - - - use approximation instead of precise equation - Použít přibližný vzorec namísto přesné rovnice - - - - Coplanar Line - Koplanární vedení - - - - ideal coupler - ideální vazební člen - - - - coupling factor - vazební faktor - - - - phase shift of coupling path in degree - fázové posunutí vazebního členu ve stupních - - - - Coupler - Vazební člen - - - - coplanar gap - koplanární mezera - - - - width of gap between the two lines - Odstup mezi koplanárními vedeními - - - - Coplanar Gap - koplanární mezera - - - - coplanar open - otevřené koplanární vedení - - - - width of gap at end of line - šířka mezery na konci vedení - - - - Coplanar Open - otevřené koplanární vedení - - - - coplanar short - zkratované koplanární vedení - - - - Coplanar Short - Zkratované koplanární vedení - - - - coplanar step - koplanární krok - - - - - - width of line 1 - šířka vedení 1 - - - - - - width of line 2 - šířka vedení 2 - - - - distance between ground planes - odstup mezi zemnícími plochami - - - - Coplanar Step - Koplanární odstup - - - - coupled transmission lines - - - - - characteristic impedance of even mode - - - - - characteristic impedance of odd mode - - - - - - - - electrical length of the line - elektrická dálka vedení - - - - relative dielectric constant of even mode - - - - - relative dielectric constant of odd mode - - - - - attenuation factor per length of even mode - - - - - attenuation factor per length of odd mode - - - - - Coupled Transmission Line - - - - - D flip flop with asynchron reset - D flip flop s asynchronním reset vstupem - - - - D-FlipFlop - D-FlipFlop - - - - - dc simulation - DC simulace - - - - - - - relative tolerance for convergence - relativení tolerance pro konvergenci - - - - - - - absolute tolerance for currents - absolutní tolerance pro proudy - - - - - - - absolute tolerance for voltages - absolutní tolerance pro napětí - - - - put operating points into dataset - zapsat operační body do datové sady - - - - - - - maximum number of iterations until error - maximální počet iterací - - - - save subcircuit nodes into dataset - zapsat simulační výsledky a pracovní body podobvodů do datové sady - - - - preferred convergence algorithm - upřednostňovaný konvergenční algoritmus - - - - - - method for solving the circuit matrix - Metoda pro řešení matice zapojení obvodu - - - - dc block - DC blokace - - - - dc Block - DC uzávěra - - - - dc feed - DC přívod - - - - dc Feed - DC přívod - - - - D flip flop with set and reset verilog device - - - - - - - - cross coupled gate transfer function high scaling factor - - - - - - - - cross coupled gate transfer function low scaling factor - - - - - - - - cross coupled gate delay - - - - - D-FlipFlop w/ SR - - - - - diac (bidirectional trigger diode) - - - - - - (bidirectional) breakover voltage - - - - - (bidirectional) breakover current - - - - - - - parasitic capacitance - - - - - - - - - emission coefficient - koeficient ideality - - - - - - intrinsic junction resistance - - - - - Diac - - - - - - digital simulation - digitální simulace - - - - type of simulation - typ simulace - - - - duration of TimeList simulation - Trvání TimeList simulace - - - - netlist format - - - - - - digital source - digitální zdroj - - - - - number of the port - číslo portu - - - - initial output value - počáteční výstupní hodnota - - - - list of times for changing output value - seznam pro okamžiky změn výstupních parametrů - - - - diode - dioda - - - - - - zero-bias junction capacitance - kapacita v závěrném směru při 0V - - - - - - - - grading coefficient - koeficient gradace - - - - - - - junction potential - potenciál v závěrném směru - - - - linear capacitance - konstantní paralelní kapacita - - - - recombination current parameter - rekombinační proudový parametr - - - - emission coefficient for Isr - emisní koeficient od Isr - - - - ohmic series resistance - ohmický sériový odpor - - - - - - transit time - přechodová doba - - - - high-injection knee current (0=infinity) - - - - - - - reverse breakdown voltage - závěrné průrazné napětí - - - - - - current at reverse breakdown voltage - Proud při průrazu v závěrném směru - - - - Bv linear temperature coefficient - lineární teplotní koeficient od Bv - - - - Rs linear temperature coefficient - lineární teplotní koeficient od Rs - - - - Tt linear temperature coefficient - lineární teplotní koeficient od Tt - - - - Tt quadratic temperature coefficient - kvadratický tepelný koeficient od Tt - - - - M linear temperature coefficient - lineární teplotní koeficient od M - - - - M quadratic temperature coefficient - kvadratický tepelný koeficient od M - - - - - default area for diode - plošný faktor diody - - - - Diode - Dioda - - - - data voltage level shifter (digital to analogue) verilog device - - - - - - voltage level - - - - - - time delay - - - - - D2A Level Shifter - - - - - data voltage level shifter (analogue to digital) verilog device - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - V - - - - - A2D Level Shifter - - - - - 2to4 demultiplexer verilog device - - - - - 2to4 Demux - - - - - 3to8 demultiplexer verilog device - - - - - 3to8 Demux - - - - - 4to16 demultiplexer verilog device - - - - - 4to16 Demux - - - - - externally controlled voltage source - - - - - - voltage in Volts - Napětí ve voltech - - - - Externally Controlled Voltage Source - - - - - EPFL-EKV MOS 2.6 verilog device - - - - - long = 1, short = 2 - - - - - length parameter - - - - - - - - - - - - - m - - - - - Width parameter - - - - - parallel multiple device number - - - - - series multiple device number - - - - - gate oxide capacitance per unit area - - - - - F/m**2 - - - - - metallurgical junction depth - - - - - channel width correction - - - - - channel length correction - - - - - long channel threshold voltage - - - - - body effect parameter - - - - - V**(1/2) - - - - - bulk Fermi potential - - - - - - - transconductance parameter - transkonduktační parametr - - - - - A/V**2 - - - - - mobility reduction coefficient - - - - - - - - - - - - - 1/V - - - - - mobility coefficient - - - - - - - V/m - - - - - - longitudinal critical field - - - - - depletion length coefficient - - - - - narrow-channel effect coefficient - - - - - reverse short channel charge density - - - - - A*s/m**2 - - - - - characteristic length - - - - - threshold voltage temperature coefficient - - - - - - - - - - - - - V/K - - - - - mobility temperature coefficient - - - - - Longitudinal critical field temperature exponent - - - - - Ibb temperature coefficient - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1/K - - - - - heavily doped diffusion length - - - - - drain/source diffusion sheet resistance - - - - - Ohm/square - - - - - source contact resistance - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Ohm - Ohmů - - - - drain contact resistance - - - - - gate to source overlap capacitance - - - - - - - - F/m - - - - - gate to drain overlap capacitance - - - - - gate to bulk overlap capacitance - - - - - first impact ionization coefficient - - - - - 1/m - - - - - second impact ionization coefficient - - - - - saturation voltage factor for impact ionization - - - - - area related theshold voltage mismatch parameter - - - - - V*m - - - - - area related gain mismatch parameter - - - - - area related body effect mismatch parameter - - - - - sqrt(V)*m - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - F - - - - - - diode relative area - - - - - charge partition parameter - - - - - - - - - - - parameter measurement temperature - teplota při měření parametrů modelu - - - - - - - - - - Celsius - - - - - EPFL-EKV NMOS 2.6 - - - - - EPFL-EKV PMOS 2.6 - - - - - equation defined device - - - - - type of equations - - - - - number of branches - - - - - - current equation - - - - - - charge equation - - - - - Equation Defined Device - - - - - equation - rovnice - - - - - - Equation - Rovnice - - - - put result into dataset - výsledek zapsat do datové sady - - - - externally driven transient simulation - - - - - - integration method - integrační metoda - - - - - order of integration method - stupeň integrační metody - - - - - initial step size in seconds - počáteční délka kroku v sekundách - - - - - minimum step size in seconds - minimální délka kroku v sekundách - - - - - relative tolerance of local truncation error - relativní tolerance lokální chyby ukončení - - - - - absolute tolerance of local truncation error - absolutní tolerance lokální chyby ukončení - - - - - overestimation of local truncation error - Faktor pro přehodnocení lokální chyby ukončení - - - - - relax time step raster - dovolit nepřesnosti při časových krocích - - - - - perform an initial DC analysis - spustit počáteční DC analýzu - - - - - maximum step size in seconds - maximální velikost kroku v sekundách - - - - External transient simulation - - - - - 1bit full adder verilog device - - - - - 1Bit FullAdder - - - - - 2bit full adder verilog device - - - - - 2Bit FullAdder - - - - - gated D latch verilog device - - - - - Gated D-Latch - - - - - 4bit Gray to binary converter verilog device - - - - - 4Bit Gray2Bin - - - - - ground (reference potential) - zem (referenční potenciál) - - - - Ground - Země - - - - gyrator (impedance inverter) - gyrátor (impedanční negátor) - - - - gyrator ratio - gyrátorový poměr - - - - Gyrator - Gyrátor - - - - 1bit half adder verilog device - - - - - 1Bit HalfAdder - - - - - Harmonic balance simulation - Harmonic balance simulace - - - - number of harmonics - počet harmonických - - - - Harmonic balance - Harmonic balance - - - - HBT model by Ferdinand-Braun-Institut (FBH), Berlin - - - - - - - - Ignored - - - - - Device operating temperature, Celsius - - - - - Thermal resistance, K/W - - - - - - - - - - - - - - Thermal capacitance - - - - - Scaling factor, number of emitter fingers - - - - - Length of emitter finger, m - - - - - Width of emitter finger, m - - - - - Forward saturation current density, A/um^2 - - - - - Forward current emission coefficient - - - - - Forward thermal activation energy, V, (0 == disables temperature dependence) - - - - - B-E leakage saturation current density, A/um^2 - - - - - B-E leakage emission coefficient - - - - - Limiting resistor of B-E leakage diode, Ohm - - - - - B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - 2nd B-E leakage saturation current density, A/um^2 - - - - - 2nd B-E leakage emission coefficient - - - - - 2nd Limiting resistor of B-E leakage diode, Ohm - - - - - 2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Reverse saturation current density, A/um^2 - - - - - Reverse current emission coefficient - - - - - Reverse thermal activation energy, V, (0 == disables temperature dependence) - - - - - Fraction of Cjc that goes to internal base node - - - - - B-C leakage saturation current density, A/um^2 (0. switches off diode) - - - - - B-C leakage emission coefficient (0. switches off diode) - - - - - Limiting resistor of B-C leakage diode, Ohm - - - - - B-C leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Ideal forward beta - - - - - Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence) - - - - - Ideal reverse beta - - - - - Forward Early voltage, V, (0 == disables Early Effect) - - - - - Reverse Early voltage, V, (0 == disables Early Effect) - - - - - Forward high-injection knee current, A, (0 == disables Webster Effect) - - - - - Reverse high-injection knee current, A, (0 == disables Webster Effect) - - - - - C-E breakdown exponent, (0 == disables collector break-down) - - - - - C-E breakdown voltage, V, (0 == disables collector break-down) - - - - - C-E breakdown factor, (0 == disables collector break-down) - - - - - B-E breakdown voltage, V, (0 == disables emitter break-down) - - - - - Ideal reverse transit time, s - - - - - Extrinsic BC diffusion capacitance, F - - - - - Ideal forward transit time, s - - - - - Temperature coefficient of forward transit time - - - - - Excess transit time coefficient at base push-out - - - - - Smoothing parameter for Thcs - - - - - B-E zero-bias depletion capacitance, F/um^2 - - - - - B-E junction exponential factor - - - - - B-E junction built-in potential, V - - - - - B-C zero-bias depletion capacitance, F/um^2 - - - - - B-C junction exponential factor - - - - - B-C junction built-in potential, V - - - - - not used - - - - - Minimum B-C depletion capacitance (Vbc dependence), F/um^2 - - - - - Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction) - - - - - Fraction of Cmin, lower limit of BC capacitance (Ic dependence) - - - - - Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out) - - - - - Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out) - - - - - Slope of Jk at high currents , Ohm*um^2 - - - - - Voltage shift of base push-out onset, V - - - - - Collector resistance, Ohm/finger - - - - - Emitter resistance, Ohm/finger - - - - - Extrinsic base resistance, Ohm/finger - - - - - Inner Base ohmic resistance, Ohm/finger - - - - - Collector inductance, H - - - - - Emitter inductance, H - - - - - Base inductance, H - - - - - Extrinsic B-C capacitance, F - - - - - Extrinsic base capacitance, F - - - - - Extrinsic collector capacitance, F - - - - - - Flicker-noise coefficient - - - - - - Flicker-noise exponent - - - - - - Flicker-noise frequency exponent - - - - - Burst noise coefficient - - - - - Burst noise exponent - - - - - Burst noise corner frequency, Hz - - - - - Ambient temperature at which the parameters were determined - - - - - FBH HBT - - - - - HICUM Level 0 v1.12 verilog device - - - - - - - - (Modified) saturation current - - - - - - - - Non-ideality coefficient of forward collector current - - - - - - - - Non-ideality coefficient of reverse collector current - - - - - - - - - - - - - - - - forward Early voltage (normalization volt.) - - - - - - - - forward d.c. high-injection roll-off current - - - - - - - - inverse d.c. high-injection roll-off current - - - - - - - - high-injection correction current - - - - - - - high-injection correction factor - - - - - - - - BE saturation current - - - - - - - - BE non-ideality factor - - - - - - - - BE recombination saturation current - - - - - - - - BE recombination non-ideality factor - - - - - - - - BC saturation current - - - - - - - - BC non-ideality factor - - - - - - - - Zero-bias BE depletion capacitance - - - - - - - - BE built-in voltage - - - - - - - - BE exponent factor - - - - - - - - Ratio of maximum to zero-bias value - - - - - - - - low current transit time at Vbici=0 - - - - - - - - Base width modulation contribution - - - - - - - - SCR width modulation contribution - - - - - - - - Storage time in neutral emitter - - - - - - - - Exponent factor for emitter transit time - - - - - - - - Saturation time at high current densities - - - - - - - - Smoothing factor for current dependence - - - - - - - - Storage time at inverse operation - - - - - - - - Low-field collector resistance under emitter - - - - - - - - Voltage dividing ohmic and satur.region - - - - - - - - - - - - Punch-through voltage - - - - - - - - Saturation voltage - - - - - - - - Total zero-bias BC depletion capacitance - - - - - - - - BC built-in voltage - - - - - - - - BC exponent factor - - - - - - - - Punch-through voltage of BC junction - - - - - - - - Zero-bias external BC depletion capacitance - - - - - - - - External BC built-in voltage - - - - - - - - External BC exponent factor - + + + + voltage of high level + napětí horní úrovně + + + + + + + + + + + + + + - - - - Split factor = Cjci0/Cjc0 - - - - - - - - Internal base resistance at zero-bias - - - - - - - - Geometry factor - + + + + + + + + + + + + + + + + + + Error + Chyba - - - - - - - - - - External base series resistance - + + Format Error: +Wrong line start! + Chyba formátu: +Neplatný začátek řádku! - - - - - - - - - - Emitter series resistance + + Format Error: +Unknown component! +%1 + +Do you make use of loadable components? - - - - - - - - - - External collector series resistance - + + Format Error: +Wrong 'component' line format! + Chyba formátu: +Chybný řádkový formát 'component' ! - - - - - - - - - - Substrate transistor transfer saturation current - + + coplanar line + koplanární vedení - - - - - Substrate transistor transfer current non-ideality factor - + + + + + + + + + + + + name of substrate definition + jméno definice substrátu - - - - SC saturation current - - - - - - - - SC non-ideality factor - + + + + + + + + width of the line + šířka vodiče - - - - Zero-bias SC depletion capacitance - - - - - - - - SC built-in voltage - - - - - - - - External SC exponent factor - + + + + width of a gap + šířka přerušení - - - - SC punch-through voltage - + + + + length of the line + délka vodiče - - - - - Collector-base isolation (overlap) capacitance - + + + + + material at the backside of the substrate + Materiál na zadní straně substrátu - - - - Emitter-base oxide capacitance - + use approximation instead of precise equation + Použít přibližný vzorec namísto přesné rovnice - - - - - Exponent factor - + + Coplanar Line + Koplanární vedení - - - - - Prefactor - + + ideal coupler + ideální vazební člen - - - - - M^(1-AF) - + + coupling factor + vazební faktor - - - - flicker noise exponent factor - + phase shift of coupling path in degree + fázové posunutí vazebního členu ve stupních - - - - - Bandgap-voltage - + + Coupler + Vazební člen - - - - - Effective emitter bandgap-voltage - + + coplanar gap + koplanární mezera - - - - - Effective collector bandgap-voltage - + + width of gap between the two lines + Odstup mezi koplanárními vedeními - - - - - Effective substrate bandgap-voltage - + + Coplanar Gap + koplanární mezera - - - - - Coefficient K1 in T-dependent bandgap equation - + + coplanar open + otevřené koplanární vedení - - - - - Coefficient K2 in T-dependent bandgap equation - + + width of gap at end of line + šířka mezery na konci vedení - - - - - Frist-order TC of tf0 - + + Coplanar Open + otevřené koplanární vedení - - - - - Second-order TC of tf0 - + + coplanar short + zkratované koplanární vedení - - - - - - 1/K^2 - + + Coplanar Short + Zkratované koplanární vedení - - - - - - - - - Exponent coefficient in transfer current temperature dependence - + + coplanar step + koplanární krok - - - - - Exponent coefficient in BE junction current temperature dependence - + + + + width of line 1 + šířka vedení 1 - - - - TC of epi-collector diffusivity - + + + width of line 2 + šířka vedení 2 - - - - Relative TC of satur.drift velocity - - - - - - - - Relative TC of vces - + distance between ground planes + odstup mezi zemnícími plochami - - - - - TC of internal base resistance - + + Coplanar Step + Koplanární odstup - - - - - TC of external base resistance + + coupled transmission lines - - - - - TC of external collector resistance + + characteristic impedance of even mode - - - - TC of emitter resistances + characteristic impedance of odd mode - - - TC of avalanche prefactor - - - - - - - TC of avalanche exponential factor - - - - - - - - Flag for self-heating calculation - + + + + electrical length of the line + elektrická dálka vedení - - - - - - - - - Thermal resistance - - - - - - - - - - - - K/W - - - - - - - - Ws/K + relative dielectric constant of even mode - - - - Temperature for which parameters are valid - - - - - - - - - - - - C + relative dielectric constant of odd mode - - - - Temperature change for particular transistor + attenuation factor per length of even mode - - - - - - - - - K + + attenuation factor per length of odd mode - - npn HICUM L0 v1.12 + + Coupled Transmission Line - - pnp HICUM L0 v1.12 - + + D flip flop with asynchron reset + D flip flop s asynchronním reset vstupem - - HICUM Level 2 v2.22 verilog device - + + D-FlipFlop + D-FlipFlop - - - - - - GICCR constant - + + + dc simulation + DC simulace - - - - - A^2s - + + + + + relative tolerance for convergence + relativení tolerance pro konvergenci - - - - - Zero-bias hole charge - + + + + absolute tolerance for currents + absolutní tolerance pro proudy - - - - - - - - - Coul - + + + + + absolute tolerance for voltages + absolutní tolerance pro napětí - - - - - - High-current correction for 2D and 3D effects - Korekce vysokého proudu pro 2D a 3D efekty + + put operating points into dataset + zapsat operační body do datové sady - - - - - Emitter minority charge weighting factor in HBTs - + + + + maximum number of iterations until error + maximální počet iterací - - - - - Collector minority charge weighting factor in HBTs - + save subcircuit nodes into dataset + zapsat simulační výsledky a pracovní body podobvodů do datové sady - - - - - - B-E depletion charge weighting factor in HBTs - + + preferred convergence algorithm + upřednostňovaný konvergenční algoritmus - - - - - - B-C depletion charge weighting factor in HBTs - + + + + method for solving the circuit matrix + Metoda pro řešení matice zapojení obvodu - - - - - - Internal B-E saturation current - + + dc block + DC blokace - - - - - - Internal B-E current ideality factor - + + dc Block + DC uzávěra - - - - - - Internal B-E recombination saturation current - + + dc feed + DC přívod - - - - - - Internal B-E recombination current ideality factor - + + dc Feed + DC přívod - - - - - - Peripheral B-E saturation current + + D flip flop with set and reset verilog device - - - - - Peripheral B-E current ideality factor + + + + cross coupled gate transfer function high scaling factor - - - - - Peripheral B-E recombination saturation current + + + + cross coupled gate transfer function low scaling factor - - - - - - Peripheral B-E recombination current ideality factor + + + + + cross coupled gate delay - - - - - - Non-ideality factor for III-V HBTs + + D-FlipFlop w/ SR - - - - - Base current recombination time constant at B-C barrier for high forward injection + + diac (bidirectional trigger diode) - - - - - - Internal B-C saturation current + + + (bidirectional) breakover voltage - - - - - - Internal B-C current ideality factor + + (bidirectional) breakover current - - - - - External B-C saturation current + + + parasitic capacitance - - - - - - External B-C current ideality factor - + + + + + + emission coefficient + koeficient ideality - - - - - B-E tunneling saturation current + + + intrinsic junction resistance - - - - - - Exponent factor for tunneling current + + Diac + + + + digital simulation + digitální simulace + + + + type of simulation + typ simulace + - - - - Specifies the base node connection for the tunneling current - + duration of TimeList simulation + Trvání TimeList simulace - - - - - Avalanche current factor + netlist format - - - - - - Exponent factor for avalanche current - + + + digital source + digitální zdroj - - - - - - Relative TC for FAVL - + + + number of the port + číslo portu - - - - - - Relative TC for QAVL - + + initial output value + počáteční výstupní hodnota - - - - - - Zero bias internal base resistance - + + list of times for changing output value + seznam pro okamžiky změn výstupních parametrů - - - - - - Factor for geometry dependence of emitter current crowding - + + diode + dioda - - - - - - Correction factor for modulation by B-E and B-C space charge layer - + + + + zero-bias junction capacitance + kapacita v závěrném směru při 0V - - - - - Ratio of HF shunt to total internal capacitance (lateral NQS effect) - + + + + + grading coefficient + koeficient gradace - - - - - Ration of internal to total minority charge - + + + + junction potential + potenciál v závěrném směru - - - - - - Forward ideality factor of substrate transfer current - + + linear capacitance + konstantní paralelní kapacita - - - - - C-S diode saturation current - + recombination current parameter + rekombinační proudový parametr - - - - - - Ideality factor of C-S diode current - + + emission coefficient for Isr + emisní koeficient od Isr - - - - - Transit time for forward operation of substrate transistor - + ohmic series resistance + ohmický sériový odpor - - - - - - Substrate series resistance - + + + + transit time + přechodová doba - - - - - - Substrate shunt capacitance + + high-injection knee current (0=infinity) - - - - - - Internal B-E zero-bias depletion capacitance - + + + + reverse breakdown voltage + závěrné průrazné napětí - - - - - - Internal B-E built-in potential - + + + + current at reverse breakdown voltage + Proud při průrazu v závěrném směru - - - - - - Internal B-E grading coefficient - + + Bv linear temperature coefficient + lineární teplotní koeficient od Bv - - - - - Ratio of maximum to zero-bias value of internal B-E capacitance - + Rs linear temperature coefficient + lineární teplotní koeficient od Rs + + + + Tt linear temperature coefficient + lineární teplotní koeficient od Tt - - - - - Peripheral B-E zero-bias depletion capacitance - + Tt quadratic temperature coefficient + kvadratický tepelný koeficient od Tt - - - - - - Peripheral B-E built-in potential - + + M linear temperature coefficient + lineární teplotní koeficient od M - - - - - - Peripheral B-E grading coefficient - + + M quadratic temperature coefficient + kvadratický tepelný koeficient od M - - - - - - Ratio of maximum to zero-bias value of peripheral B-E capacitance - + + + default area for diode + plošný faktor diody - - - - - - Internal B-C zero-bias depletion capacitance - + + Diode + Dioda - - - - - - Internal B-C built-in potential + + data voltage level shifter (digital to analogue) verilog device - - - - - Internal B-C grading coefficient + + voltage level - - - - - Internal B-C punch-through voltage + + time delay - - - - - - External B-C zero-bias depletion capacitance + + D2A Level Shifter - - - - - - External B-C built-in potential + + data voltage level shifter (analogue to digital) verilog device + + + + + + + + + + + - - - - - External B-C grading coefficient + + + + + + + + + + + V - - - - - - External B-C punch-through voltage + + A2D Level Shifter - - - - - Partitioning factor of parasitic B-C cap + + 2to4 demultiplexer verilog device - - - - - Partitioning factor of parasitic B-E cap + + 2to4 Demux - - - - - - C-S zero-bias depletion capacitance + + 3to8 demultiplexer verilog device - - - - - - C-S built-in potential + + 3to8 Demux - - - - - - C-S grading coefficient + + 4to16 demultiplexer verilog device - - - - - - C-S punch-through voltage + + 4to16 Demux - - - - - - Low current forward transit time at VBC=0V + + externally controlled voltage source - - - - - - Time constant for base and B-C space charge layer width modulation - + + + voltage in Volts + Napětí ve voltech - - - - - Time constant for modelling carrier jam at low VCE + + Externally Controlled Voltage Source - - - - - - Neutral emitter storage time + + EPFL-EKV MOS 2.6 verilog device - - - - - - Exponent factor for current dependence of neutral emitter storage time + + long = 1, short = 2 - - - - - Saturation time constant at high current densities + length parameter + - - - - - Smoothing factor for current dependence of base and collector transit time + + + + + + + + m - - - - - - Partitioning factor for base and collector portion + + Width parameter - - - - - - Internal collector resistance at low electric field + + parallel multiple device number - - - - - - Voltage separating ohmic and saturation velocity regime + + series multiple device number - - - - - - Internal C-E saturation voltage + + gate oxide capacitance per unit area - - - - - - Collector punch-through voltage + + F/m**2 - - - - - - Storage time for inverse operation + + metallurgical junction depth - - - - - Total parasitic B-E capacitance + channel width correction - - - - - Total parasitic B-C capacitance + channel length correction - - - - - Factor for additional delay time of minority charge + long channel threshold voltage - - - - - - Factor for additional delay time of transfer current + + body effect parameter - - - - - Flag for turning on and off of vertical NQS effect + + V**(1/2) - - - - - Flicker noise coefficient + bulk Fermi potential - - - - - - Flicker noise exponent factor - + + + + transconductance parameter + transkonduktační parametr - - - - - Flag for determining where to tag the flicker noise source + + + A/V**2 - - - - - Scaling factor for collector minority charge in direction of emitter width + mobility reduction coefficient - - - - - - Scaling factor for collector minority charge in direction of emitter length + + + + + + 1/V - - - - - Bandgap voltage extrapolated to 0 K + mobility coefficient + - - - - - First order relative TC of parameter T0 + + V/m - - - - - - Second order relative TC of parameter T0 + + + longitudinal critical field - - - - - - Temperature exponent for RCI0 + + depletion length coefficient - - - - - Relative TC of saturation drift velocity + narrow-channel effect coefficient - - - - - - Relative TC of VCES + + reverse short channel charge density - - - - - - Temperature exponent of internal base resistance + + A*s/m**2 - - - - - Temperature exponent of external base resistance + characteristic length - - - - - - Temperature exponent of external collector resistance + + threshold voltage temperature coefficient - - - - - - Temperature exponent of emitter resistance + + V/K - - - - - Temperature exponent of mobility in substrate transistor transit time + mobility temperature coefficient - - - - Effective emitter bandgap voltage - - - - - - - - Effective collector bandgap voltage - - - - - - - - Effective substrate bandgap voltage - - - - - - - - Coefficient K1 in T-dependent band-gap equation + Longitudinal critical field temperature exponent - - - - Coefficient K2 in T-dependent band-gap equation + Ibb temperature coefficient - - - - - Exponent coefficient in B-E junction current temperature dependence + + 1/K - - - - - Relative TC of forward current gain for V2.1 model + heavily doped diffusion length - - - - Flag for turning on and off self-heating effect - - - - - - - - J/W + drain/source diffusion sheet resistance - - - - - Flag for compatibility with v2.1 model (0=v2.1) + + Ohm/square - - - - - Temperature at which parameters are specified + source contact resistance + - - - - - Temperature change w.r.t. chip temperature for particular transistor - - - - - HICUM L2 v2.22 - + + + + + + + + + + + Ohm + Ohmů - - HICUM Level 0 v1.2 verilog device + + drain contact resistance - - - - reverse Early voltage (normalization volt.) + + gate to source overlap capacitance - - - - flag for turning on base related critical current + + + + + F/m - - - - Smoothing factor for the d.c. injection width + + gate to drain overlap capacitance - - - - BE charge built-in voltage for d.c. transfer current + + gate to bulk overlap capacitance - - - charge BE exponent factor for d.c. transfer current + first impact ionization coefficient - - - - BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current + + 1/m - - - TC of iqf + + second impact ionization coefficient - - - - Exponent factor for temperature dependent thermal resistance + + saturation voltage factor for impact ionization - - npn HICUM L0 v1.2 + + area related theshold voltage mismatch parameter - - pnp HICUM L0 v1.2 + + V*m - - HICUM Level 0 v1.2g verilog device + + area related gain mismatch parameter - - high-injection roll-off current + + area related body effect mismatch parameter - - TC of iqf (bandgap coefficient of zero bias hole charge) + + sqrt(V)*m - - TC of avalanche prefactor, identical to alfav of Hicum/L2 + + + + + + + + + + + A + + + - TC of avalanche exponential factor, identical to alqav of Hicum/L2 + + + + F - - Emitter part coefficient of the zero bias hole charge temperature variation + + + diode relative area - - Collector part coefficient of the zero bias hole charge temperature variation + + charge partition parameter - Bandgap TC parameter of ver - + + + + + + + parameter measurement temperature + teplota při měření parametrů modelu - - Bandgap TC parameter of vef + + + + + + + + Celsius - - Specific recombination current at the BC barrier for high forward injection + + EPFL-EKV NMOS 2.6 - - npn HICUM L0 v1.2g + + EPFL-EKV PMOS 2.6 - - pnp HICUM L0 v1.2g + + equation defined device - - HICUM Level 0 v1.3 verilog device + + type of equations - - Flag for using third order solution for transfer current + + number of branches - - bias dependence for reverse Early voltage + + + current equation - - Flag for turning temperature dependence of tef0 on and off + + + charge equation - - TC of Reverse Early voltage + + Equation Defined Device - - TC of AVER - + + equation + rovnice - - Bandgap difference between base and BE-junction - + + + + Equation + Rovnice - - Frist-order TC of iqfh - + + put result into dataset + výsledek zapsat do datové sady - - Second-order TC of iqfh + + externally driven transient simulation - - npn HICUM L0 v1.3 - + + + integration method + integrační metoda - - pnp HICUM L0 v1.3 - + + + order of integration method + stupeň integrační metody - - HICUM Level 2 v2.1 verilog device - + + + initial step size in seconds + počáteční délka kroku v sekundách - - Partitioning factor of parasitic B-C capacitance - + + + minimum step size in seconds + minimální délka kroku v sekundách - - Noise factor for internal base resistance - + + + relative tolerance of local truncation error + relativní tolerance lokální chyby ukončení - - HICUM L2 v2.1 - + + + absolute tolerance of local truncation error + absolutní tolerance lokální chyby ukončení - - HICUM Level 2 v2.23 verilog device - + + + overestimation of local truncation error + Faktor pro přehodnocení lokální chyby ukončení - - HICUM L2 v2.23 - + + + relax time step raster + dovolit nepřesnosti při časových krocích - - HICUM Level 2 v2.24 verilog device - + + + perform an initial DC analysis + spustit počáteční DC analýzu - - HICUM L2 v2.24 - + + + maximum step size in seconds + maximální velikost kroku v sekundách - - hicumL2V2p31n verilog device + + External transient simulation - - Weight factor for the low current minority charge + + 1bit full adder verilog device - - Parameter describing the slope of hjEi(VBE) + + 1Bit FullAdder - - Smoothing parameter for hjEi(VBE) at high voltage + + 2bit full adder verilog device - - Time constant for modeling carrier jam at low VCE + + 2Bit FullAdder - - Barrier voltage + + gated D latch verilog device - - Normalization parameter + + Gated D-Latch - - Smoothing parameter for barrier voltage + + 4bit Gray to binary converter verilog device - - fitting factor for critical current + + 4Bit Gray2Bin - - Flag for turning on and off of correlated noise implementation - + + ground (reference potential) + zem (referenční potenciál) - - Emitter resistance flicker noise coefficient - + + Ground + Země - - Emitter resistance flicker noise exponent factor - + + gyrator (impedance inverter) + gyrátor (impedanční negátor) - - Bandgap difference between B and B-E junction used for hjEi0 and hf0 - + + gyrator ratio + gyrátorový poměr - - Temperature coefficient for ahjEi - + + Gyrator + Gyrátor - - Temperature coefficient for hjEi0 + + 1bit half adder verilog device - - Temperature coefficient for Rth + + 1Bit HalfAdder - - First order relative TC of parameter Rth - + + Harmonic balance simulation + Harmonic balance simulace - - HICUM L2 V2.31 - + + number of harmonics + počet harmonických + + + + Harmonic balance + Harmonic balance @@ -12085,7 +7792,7 @@ Chybný řádkový formát 'component' ! - + ERROR: No file name in SPICE component "%1". CHYBA: ve SPICE-komponentě "%1" není zadán žádný název souboru. @@ -12508,11 +8215,15 @@ Chybný řádkový formát 'component' ! napěťově řízený zdroj proudu - voltage controlled voltage source napěťově řízený zdroj napětí + + + voltage controlled resistor + + resistance gain @@ -12547,7 +8258,7 @@ Chybný řádkový formát 'component' ! - + ERROR: No file name in %1 component "%2". @@ -12710,7 +8421,7 @@ Chybný řádkový formát 'component' ! - + invalid neplatný @@ -12819,7 +8530,7 @@ Chybný řádkový formát 'component' ! - + Successfully exported @@ -12842,8 +8553,8 @@ Use PNG, JPEG or SVG graphics! - - + + verilog-a user devices @@ -12902,14 +8613,14 @@ Use PNG, JPEG or SVG graphics! - + diagrams - + paintings @@ -13027,16 +8738,16 @@ Set the Octave location on the application settings. - + - + untitled nepojmenováno - + Format Error: 'Painting' field is not closed! @@ -13212,17 +8923,17 @@ Neznámá položka! CHYBA: Podobvod "%1" nelze otevřít. - + WARNING: Skipping library component "%1". - - ERROR: Cannot load library component "%1". - CHYBA: komponentu z knihovny "%1" nelze otevřít. + + ERROR: "%1": Cannot load library component "%2" from "%3" + - + WARNING: Ignore simulation component in subcircuit "%1". UPOZORNĚNÍ: Simulační komponenta v podobvodu "%1" bude ignorována. @@ -13232,7 +8943,7 @@ Neznámá položka! - + ERROR: Only one digital simulation allowed. CHYBA: Je povolena pouze jedna digitální simulace. @@ -13361,11 +9072,17 @@ a substrate with lower permittivity and larger height. Cannot save settings file ! + + + Quarter wave filters do not allow low-pass nor high-pass masks + + + QucsActiveFilter - + &File &Soubor @@ -13375,7 +9092,29 @@ a substrate with lower permittivity and larger height. &Ukončit - + + &View + &Náhled + + + + &Console + + + + + Enables/disables the filter calculation console + + + + + Console + +Enables/disables the filter calculation console + + + + &Help &Nápověda @@ -13395,30 +9134,30 @@ a substrate with lower permittivity and larger height. O prostředí Qt... - - + + Passband attenuation, Ap (dB) - + Stopband attenuation, As (dB) - - Cuttof frequency, Fc (Hz) + + Cutoff frequency, Fc (Hz) - - + + Stopband frequency, Fs (Hz) - + Passband ripple Rp(dB) @@ -13428,7 +9167,7 @@ a substrate with lower permittivity and larger height. - + Filter order @@ -13478,27 +9217,61 @@ a substrate with lower permittivity and larger height. - - Calculation console + + Low Pass - - Filter topology + + General filter amplitude-frequency response - - Filter type: - Typ filtru: + + + + Unable to implement filter with such parameters and topology +Change parameters and/or topology and try again! + + + + + + Filter calculation was successful + - LowPass + Filter calculation terminated with error! + + + + + Filter calculation terminated with error + + + + + Lower cutoff frequency, Fl (Hz) + + + + + Copyright (C) 2014, 2015 by + Copyright (C) 2005, 2006 : {2014, 2015 ?} + + + + Filter topology + Filter type: + Typ filtru: + + + High Pass @@ -13524,62 +9297,45 @@ a substrate with lower permittivity and larger height. - + Cauer section - - General amplitude frequency response - - - - - Filter topology preview (one stage) - - - - + Filter parameters - + Transfer function and Topology - - General filter amplidure-frequency response + + Filter topology preview - - Filter topology preview + + Filter calculation console - - Filter calculation console + + + Ready. - + Upper cutoff frequency of band-pass/band-stop filter is less than lower. Unable to implement such filter. Change parameters and try again. - - - - Unable to implement filter with such parameters and topology -Change parapeters and/or topology and try again! - - - - + Unable to use Cauer section for Chebyshev or Butterworth frequency response. Try to use another topology. @@ -13595,40 +9351,28 @@ frequency response. Try to use another topology. Function will be implemented in future version - - - -Filter calculation was sucessfull - - - - - -Filter calculation terminated with error - - Upper cutoff frequency, Fu (Hz) - - Lower cuttoff frequency, Fl (Hz) + + Transient bandwidth, TW (Hz) - - Transient bandwidth, TW (Hz) + + Error! - + Active filter design - + About... O programu... @@ -13640,12 +9384,7 @@ Active Filter synthesis program - - Copyright (C) 2014 by - Copyright (C) 2005, 2006 : {2014 ?} - - - + About Qt O prostředí Qt @@ -13653,7 +9392,7 @@ Active Filter synthesis program QucsApp - + Schematic Schéma @@ -13669,42 +9408,42 @@ Active Filter synthesis program - + VHDL Sources VHDL zdroje - - + + Verilog Sources Verilog data - - + + Verilog-A Sources - - + + Octave Scripts - + Spice Files - + Any File Všechny soubory - + The schematic search path has been refreshed. @@ -13724,7 +9463,7 @@ Active Filter synthesis program Schémata - + New Nový @@ -13809,13 +9548,13 @@ Active Filter synthesis program - + - + @@ -13838,7 +9577,7 @@ Active Filter synthesis program Chyba - + Cannot open "%1". Soubor "%1" nelze otevřít. @@ -13850,8 +9589,16 @@ Active Filter synthesis program Soubor s knihovnou je poškozen. - - + + + + + Search results + + + + + @@ -13870,13 +9617,18 @@ Active Filter synthesis program Informace - + Default icon not found: %1.png - + + verilog-a user devices + + + + -port -port @@ -13887,14 +9639,14 @@ Active Filter synthesis program - + The document contains unsaved changes! Dokument obsahuje neuložené změny! - + Do you want to save the changes before copying? @@ -13905,13 +9657,13 @@ Active Filter synthesis program - + &Save &Uložit - + Copy file @@ -13945,31 +9697,31 @@ Active Filter synthesis program - + Warning Upozornění - + This will delete the file permanently! Continue ? Soubor bude nenávratně smazán! Pokračovat ? - + No Ne - + - + Yes Ano - + unknown @@ -14130,7 +9882,7 @@ Active Filter synthesis program - + @@ -14144,7 +9896,7 @@ Active Filter synthesis program Hotovo. - + Creating new text editor... Vytvoření nového textového editoru... @@ -14209,12 +9961,12 @@ Active Filter synthesis program - + Cancel Přerušit - + Cannot overwrite an open document Otevřený soubor nelze přepsat @@ -14229,7 +9981,7 @@ Active Filter synthesis program Uložit všechny soubory... - + Closing file... Uzavřít soubor... @@ -14253,10 +10005,6 @@ Active Filter synthesis program Open examples directory... - - OK - OK - Printing... @@ -16205,110 +11953,6 @@ O aplikačním prostředí QT od firmy Trolltech Warnings in last simulation! Press F5 V poslední simulaci se vyskytly varování! Stiskněte F5 - - About... - O aplikaci... - - - Qucs Version - Qucs verze - - - Quite Universal Circuit Simulator - Docela univerzální simulátor elektrických obvodů - - - Copyright (C) - Copyright (C) - - - by Michael Margraf - Michael Margraf - - - Simulator by Stefan Jahn - Simulator - Stefan Jahn - - - VHDL simulator 'FreeHDL' by Edwin Naroska and Marius Vollmer - VHDL-Simulator 'FreeHDL' - Edwin Naroska a Marius Vollmer - - - Special thanks to Jens Flucke and Raimund Jacob - Zvláštní poděkování - Jens Flucke und Raimund Jacob - - - Many thanks to Mike Brinson for correcting the VHDL output - Ozvláštně velký dík - Mike Brinson, za zlepšení na VHDL výstupech - - - GUI improvements by Gopala Krishna A - GUI vylepšení: Gopala Krishna A - - - Verilog-AMS interface by Helene Parruitte - Verilog-AMS rozhraní: Helene Parruitte - - - Translations: - Překlady: - - - German by Stefan Jahn - Německy - Stefan Jahn - - - Polish by Dariusz Pienkowski - Polsky - Dariusz Pienkowski - - - Romanian by Radu Circa - Rumunsky - Radu Circa - - - French by Vincent Habchi, F5RCS - Franzouzsky - Vincent Habchi, F5RCS - - - Spanish by Jose L. Redrejo Rodriguez - Španělsky - Jose L. Redrejo Rodriguez - - - Japanese by Toyoyuki Ishikawa - Japonsky - Toyoyuki Ishikawa - - - Italian by Giorgio Luparia and Claudio Girardi - Italsky - Giorgio Luparia a Claudio Girardi - - - Hebrew by Dotan Nahum - Hebrejsky - Dotan Nahum - - - Swedish by Peter Landgren - Švédsky - Peter Landgren - - - Turkish by Onur and Ozgur Cobanoglu - Turecky - Onur und Ozgur Cobanoglu - - - Hungarian by Jozsef Bus - Maďarsky - Jozsef Bus - - - Russian by Igor Gorbounov - Rusky - Igor Gorbounov - - - Czech by Marek Straka - České rozhraní: Marek Straka - - - Catalan by Antoni Subirats - Katalánské rozhraní: Antoni Subirats - QucsAttenuator @@ -16579,7 +12223,7 @@ Jednoduchý editor pro Qucs QucsFilter - + &File &Soubor @@ -16619,7 +12263,7 @@ Jednoduchý editor pro Qucs - + Filter type: Typ filtru: @@ -16655,29 +12299,29 @@ Jednoduchý editor pro Qucs - + Corner frequency: Hraniční frekvence: - + Stop frequency: Koncová frekvence: - + Stop band frequency: Limitní frekvence: - - + + Pass band ripple: Propustné zvlnění: - + Stop band attenuation: Limitní tlumení: @@ -16747,19 +12391,19 @@ program pro syntézu filtru - + Result: Výsledek: - + Error Chyba - + Stop frequency must be greater than start frequency. Koncová frekvence musí být větší než počáteční frekvence. @@ -16916,17 +12560,22 @@ Aktivuje/deaktivuje výpis obsahu O programu - + Component Selection Výběr komponent - - Search... - Hledat... + + Search Lib Components + - + + Clear + + + + Component Komponenta @@ -16941,7 +12590,7 @@ Aktivuje/deaktivuje výpis obsahu Ukázat model - + About... O programu... @@ -16952,6 +12601,12 @@ Aktivuje/deaktivuje výpis obsahu Správa knihoven pro Qucs + + + Copyright (C) 2011-2015 Qucs Team + + + Copyright (C) 2005 by Michael Margraf @@ -16961,7 +12616,7 @@ Aktivuje/deaktivuje výpis obsahu - + QucsLib Help QucsLib nápověda @@ -16981,14 +12636,17 @@ Aktivuje/deaktivuje výpis obsahu - - Search result - Výsledek hledání + + + + + Search results + - + - + @@ -16997,13 +12655,13 @@ Aktivuje/deaktivuje výpis obsahu Chyba - + Cannot open "%1". Soubor "%1" nelze otevřít. - + @@ -17011,21 +12669,6 @@ Aktivuje/deaktivuje výpis obsahu Library is corrupt. Soubor s knihovnou je poškozen. - - - Search Library Component - Vyhledat komponentu z knihovny - - - - Result - Výsledek - - - - No appropriate component found. - Nenalezeny žádné odpovídající komponenty. - QucsSettingsDialog @@ -18042,7 +13685,7 @@ Upraví symbol v tomto schématu - + Error Chyba @@ -18060,7 +13703,7 @@ Set the admsXml location on the application settings. - + ERROR: Cannot create library file "%s". CHYBA: Nelze vytvořit knihovnu v souboru "%s". @@ -18069,83 +13712,46 @@ Set the admsXml location on the application settings. SearchDialog - - - - Dialog - - - - Text to search for Text k nalezení - - - - Text to replace with Text k nahrazení za - - - - Ask before replacing Dotázat se před záměnou - - - - Case sensitive S rozlišením velikosti písmen - - - - Whole words only Pouze celá slova - - - - Search backwards Hledat zpětně - - - - Next - - - - - Close Zavřít @@ -18159,30 +13765,6 @@ Set the admsXml location on the application settings. Search Text Hledat text - - - The search result contains all components whose -name contains the search string. All libraries -are included in the search. - Výsledek hledání obsahuje všechny komponenty, v jejichž -jméně je hledaný řetězec. Do hledání budou zahrnuty všechny knihovny. - - - - Search string: - Hledaný pojem: - - - - Search - Hledat - - - - - Search result - Výsledek hledání - SettingsDialog @@ -18464,12 +14046,6 @@ jméně je hledaný řetězec. Do hledání budou zahrnuty všechny knihovny.Simulation aborted by the user! - - Errors: -------- - Chyby: -------- - SpiceDialog @@ -18632,7 +14208,7 @@ jméně je hledaný řetězec. Do hledání budou zahrnuty všechny knihovny. SymbolWidget - + Symbol: Symbol: @@ -18641,6 +14217,13 @@ jméně je hledaný řetězec. Do hledání budou zahrnuty všechny knihovny.! Drag n'Drop me ! ! Chytni mě a přesuň ! + + + Warning: Symbol '%1' missing in Qucs Library. +Drag and Drop may still work. +Please contact the developers. + + TextDoc diff --git a/qucs/translations/qucs_de.ts b/qucs/translations/qucs_de.ts index 4efdd87238..44ecf2f0b0 100644 --- a/qucs/translations/qucs_de.ts +++ b/qucs/translations/qucs_de.ts @@ -1109,10 +1109,6 @@ Save to file (Graphics format by extension) Als Datei speichern (Grafikformat wird durch Endung erkannt) - - Width in pixels - Breite in Pixeln - Height in pixels @@ -1138,10 +1134,6 @@ Cancel Abbrechen - - File - Datei - Width in pixels @@ -1187,10 +1179,6 @@ Export Schematic to Image - - Export to image - Exportiere als Grafik - Export diagram to raster or vector image @@ -3539,62 +3527,6 @@ Resistor color code computation program - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - @@ -3750,10 +3682,6 @@ Resistor color code computation program - - - - polarity @@ -3958,10 +3886,6 @@ Resistor color code computation program - - - - @@ -4102,5709 +4026,1480 @@ Resistor color code computation program - - bsim3v34nMOS verilog device + + + + + + + + + + + simulation temperature + + + capacitor + Kondensator + + capacitance in Farad + Kapazität in Farad + + + initial voltage for transient simulation + + + + + + + + + schematic symbol + Schaltkreissymbol + + + + Capacitor + Kondensator + + + + current controlled current source + stromgesteuerte Stromquelle + + + + + + forward transfer factor + Vorwärtstransferfaktor + + + + + + + + + + + + + + + delay time + Verzögerungszeit + + + + Current Controlled Current Source + stromgesteuerte Stromquelle + + + + current controlled voltage source + stromgesteuerte Spannungsquelle + + + + Current Controlled Voltage Source + stromgesteuerte Spannungsquelle + + + + circulator + Zirkulator + + + + reference impedance of port 1 + Referenzimpedanz von Tor 1 + + + reference impedance of port 2 + Referenzimpedanz von Tor 2 + + + reference impedance of port 3 + Referenzimpedanz von Tor 3 + + + + Circulator + Zirkulator + + + + coaxial transmission line + Koaxialleitung + + + + + relative permittivity of dielectric + relative Permittivität des Dielektrikums + + + + + specific resistance of conductor + spezifischer Widerstand des Leiters + + + + + relative permeability of conductor + relative Permeabilität des Leiters + + + inner diameter of shield + innerer Durchmesser des Außenleiters + + + diameter of inner conductor + Durchmesser des Innenleiters + + + + mechanical length of the line + mechanische Länge der Leitung + + + + + + loss tangent + dielektrischer Verlustwinkel + + + + Coaxial Line + Koaxialkabel + + + + 1bit comparator verilog device + + + + + 1Bit Comparator + + + + + 2bit comparator verilog device + + + + + 2Bit Comparator + + + + + 4bit comparator verilog device + + + + + 4Bit Comparator + + + + + number of input ports + Anzahl der Eingänge + + - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - simulation temperature - - - - - bsim3v34nMOS - - - - - bsim3v34pMOS verilog device - - - - - bsim3v34pMOS - - - - - bsim4v30nMOS verilog device - - - - - bsim4v30nMOS - - - - - bsim4v30pMOS verilog device - - - - - bsim4v30pMOS - - - - - capacitor - Kondensator - - - - capacitance in Farad - Kapazität in Farad - - - - initial voltage for transient simulation - - - - - - - - - - schematic symbol - Schaltkreissymbol - - - - Capacitor - Kondensator - - - - current controlled current source - stromgesteuerte Stromquelle - - - - - - forward transfer factor - Vorwärtstransferfaktor - - - - - - - - - - - - - - - delay time - Verzögerungszeit - - - - Current Controlled Current Source - stromgesteuerte Stromquelle - - - - current controlled voltage source - stromgesteuerte Spannungsquelle - - - - Current Controlled Voltage Source - stromgesteuerte Spannungsquelle - - - - circulator - Zirkulator - - - - reference impedance of port 1 - Referenzimpedanz von Tor 1 - - - - reference impedance of port 2 - Referenzimpedanz von Tor 2 - - - - reference impedance of port 3 - Referenzimpedanz von Tor 3 - - - - Circulator - Zirkulator - - - - coaxial transmission line - Koaxialleitung - - - - - relative permittivity of dielectric - relative Permittivität des Dielektrikums - - - - - - specific resistance of conductor - spezifischer Widerstand des Leiters - - - - - - relative permeability of conductor - relative Permeabilität des Leiters - - - - inner diameter of shield - innerer Durchmesser des Außenleiters - - - - diameter of inner conductor - Durchmesser des Innenleiters - - - - - mechanical length of the line - mechanische Länge der Leitung - - - - - - - loss tangent - dielektrischer Verlustwinkel - - - - Coaxial Line - Koaxialkabel - - - - 1bit comparator verilog device - - - - - 1Bit Comparator - - - - - 2bit comparator verilog device - - - - - 2Bit Comparator - - - - - 4bit comparator verilog device - - - - - 4Bit Comparator - - - - - number of input ports - Anzahl der Eingänge - - - - - - - voltage of high level - Spannung des High-Pegels - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Error - Fehler - - - - Format Error: -Wrong line start! - Formatierfehler: -Ungültiger Zeilenanfang! - - - - Format Error: -Unknown component! -%1 - -Do you make use of loadable components? - - - - - Format Error: -Wrong 'component' line format! - Formatierfehler: -Falsches 'component' Zeilenformat! - - - - coplanar line - Koplanarleitung - - - - - - - - - - - - - - name of substrate definition - Name der Substratdefinition - - - - - - - - - - - width of the line - Leitungsbreite - - - - - - - width of a gap - Schlitzbreite - - - - - - - length of the line - Leitungslänge - - - - - - - material at the backside of the substrate - Material auf der Rückseite des Substrats - - - - use approximation instead of precise equation - Verwenden der Näherungsformel statt der präzisen Gleichung - - - - Coplanar Line - Koplanarleitung - - - - ideal coupler - idealer Koppler - - - - coupling factor - Koppelfaktor - - - - phase shift of coupling path in degree - Phasenverschiebung des Koppelpfades in Grad - - - - Coupler - Koppler - - - - coplanar gap - Koplanarlücke - - - - width of gap between the two lines - Abstand zwischen den Koplanarleitungsenden - - - - Coplanar Gap - Koplanarlücke - - - - coplanar open - offene Koplanarleitung - - - - width of gap at end of line - Spaltbreite am Ende der Leitung - - - - Coplanar Open - Offene Koplanarleitung - - - - coplanar short - kurzgeschlossene Koplanarleitung - - - - Coplanar Short - Kurzgeschlossene Koplanarleitung - - - - coplanar step - Koplanarabsatz - - - - - - width of line 1 - Leitungsbreite 1 - - - - - - width of line 2 - Leitungsbreite 2 - - - - distance between ground planes - Abstand zwischen den Masseebenen - - - - Coplanar Step - Koplanarabsatz - - - - coupled transmission lines - gekoppelte Übertragungsleitung - - - - characteristic impedance of even mode - - - - - characteristic impedance of odd mode - - - - - - - - electrical length of the line - elektrische Länge der Leitung - - - - relative dielectric constant of even mode - - - - - relative dielectric constant of odd mode - - - - - attenuation factor per length of even mode - - - - - attenuation factor per length of odd mode - - - - - Coupled Transmission Line - - - - - D flip flop with asynchron reset - D-Speicherglied mit asynchronem Reseteingang - - - - D-FlipFlop - D-Speicherglied - - - - - dc simulation - DC-Simulation - - - - - - - relative tolerance for convergence - relative Toleranz für Konvergenz - - - - - - - absolute tolerance for currents - absolute Toleranz für Ströme - - - - - - - absolute tolerance for voltages - absolute Toleranz für Spannungen - - - - put operating points into dataset - Ausgabe der Arbeitspunkte in den Datensatz - - - - - - - maximum number of iterations until error - maximale Anzahl der Iterationen - - - - save subcircuit nodes into dataset - Ausgabe der Simulationsergebnisse und Arbeitspunkte von Teilschaltungen in den Datensatz - - - - preferred convergence algorithm - bevorzugter Konvergenz-Algorithmus - - - - - - method for solving the circuit matrix - Gleichungslöser für die Schaltkreismatrix - - - - dc block - DC-Sperre - - - - dc Block - DC-Sperre - - - - dc feed - DC-Zuführung - - - - dc Feed - DC-Zuführung - - - - D flip flop with set and reset verilog device - - - - - - - - cross coupled gate transfer function high scaling factor - - - - - - - - cross coupled gate transfer function low scaling factor - - - - - - - - cross coupled gate delay - - - - - D-FlipFlop w/ SR - - - - - diac (bidirectional trigger diode) - - - - - - (bidirectional) breakover voltage - - - - - (bidirectional) breakover current - - - - - - - parasitic capacitance - - - - - - - - - emission coefficient - Idealiätsfaktor - - - - - - intrinsic junction resistance - - - - - Diac - - - - - - digital simulation - Digitalsimulation - - - - type of simulation - Art der Simulation - - - - duration of TimeList simulation - Zeitdauer der TimeList Simulation - - - - netlist format - - - - - - digital source - Digital-Quelle - - - - - number of the port - Tornummer - - - - initial output value - anfänglicher Ausgabewert - - - - list of times for changing output value - Zeitenliste für die Veränderung der Ausgabewerte - - - - diode - Diode - - - - - - zero-bias junction capacitance - Sperrschichtkapazität bei 0 Volt - - - - - - - - grading coefficient - Gradationskoeffizient - - - - - - - junction potential - Sperrschichtpotential - - - - linear capacitance - konstante Parallelkapazität - - - - recombination current parameter - Rekombinationsstromparameter - - - - emission coefficient for Isr - Emissionskoeffizient von Isr - - - - ohmic series resistance - ohmscher Serienwiderstand - - - - - - transit time - Transitzeit - - - - high-injection knee current (0=infinity) - - - - - - - reverse breakdown voltage - Durchbruchspannung rückwärts - - - - - - current at reverse breakdown voltage - Strom bei der Durchbruchspannung im Rückwärtsbetrieb - - - - Bv linear temperature coefficient - linearer Temperaturkoeffizient von Bv - - - - Rs linear temperature coefficient - linearer Temperaturkoeffizient von Rs - - - - Tt linear temperature coefficient - linearer Temperaturkoeffizient von Tt - - - - Tt quadratic temperature coefficient - quadratischer Temperaturkoeffizient von Tt - - - - M linear temperature coefficient - linearer Temperaturkoeffizient von M - - - - M quadratic temperature coefficient - quadratischer Temperaturkoeffizient von M - - - - - default area for diode - Skalierungsfaktor der Diode - - - - Diode - Diode - - - - data voltage level shifter (digital to analogue) verilog device - - - - - - voltage level - - - - - - time delay - - - - - D2A Level Shifter - - - - - data voltage level shifter (analogue to digital) verilog device - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - V - - - - - A2D Level Shifter - - - - - 2to4 demultiplexer verilog device - - - - - 2to4 Demux - - - - - 3to8 demultiplexer verilog device - - - - - 3to8 Demux - - - - - 4to16 demultiplexer verilog device - - - - - 4to16 Demux - - - - - externally controlled voltage source - - - - - - voltage in Volts - Spannung in Volt - - - - Externally Controlled Voltage Source - - - - - EPFL-EKV MOS 2.6 verilog device - - - - - long = 1, short = 2 - - - - - length parameter - - - - - - - - - - - - - m - - - - - Width parameter - - - - - parallel multiple device number - - - - - series multiple device number - - - - - gate oxide capacitance per unit area - - - - - F/m**2 - - - - - metallurgical junction depth - - - - - channel width correction - - - - - channel length correction - - - - - long channel threshold voltage - - - - - body effect parameter - - - - - V**(1/2) - - - - - bulk Fermi potential - - - - - - - transconductance parameter - Transkonduktanzparameter - - - - - A/V**2 - - - - - mobility reduction coefficient - - - - - - - - - - - - - 1/V - - - - - mobility coefficient - - - - - - - V/m - - - - - - longitudinal critical field - - - - - depletion length coefficient - - - - - narrow-channel effect coefficient - - - - - reverse short channel charge density - - - - - A*s/m**2 - - - - - characteristic length - - - - - threshold voltage temperature coefficient - - - - - - - - - - - - - V/K - - - - - mobility temperature coefficient - - - - - Longitudinal critical field temperature exponent - - - - - Ibb temperature coefficient - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1/K - - - - - heavily doped diffusion length - - - - - drain/source diffusion sheet resistance - - - - - Ohm/square - - - - - source contact resistance - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Ohm - - - - - drain contact resistance - - - - - gate to source overlap capacitance - - - - - - - - F/m - - - - - gate to drain overlap capacitance - - - - - gate to bulk overlap capacitance - - - - - first impact ionization coefficient - - - - - 1/m - - - - - second impact ionization coefficient - - - - - saturation voltage factor for impact ionization - - - - - area related theshold voltage mismatch parameter - - - - - V*m - - - - - area related gain mismatch parameter - - - - - area related body effect mismatch parameter - - - - - sqrt(V)*m - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - F - - - - - - diode relative area - - - - - charge partition parameter - - - - - - - - - - - parameter measurement temperature - Temperatur bei der die Modellparameter gemessen wurden - - - - - - - - - - Celsius - - - - - EPFL-EKV NMOS 2.6 - - - - - EPFL-EKV PMOS 2.6 - - - - - equation defined device - - - - - type of equations - - - - - number of branches - - - - - - current equation - - - - - - charge equation - - - - - Equation Defined Device - - - - - equation - Gleichung - - - - - - Equation - Gleichung - - - - put result into dataset - Ergebnis in den Datensatz ausgeben - - - - externally driven transient simulation - - - - - - integration method - Integrationsverfahren - - - - - order of integration method - Ordnung des Integrationsverfahren - - - - - initial step size in seconds - Anfangsschrittweite in Sekunden - - - - - minimum step size in seconds - minimale Schrittweite in Sekunden - - - - - relative tolerance of local truncation error - relative Toleranz des lokalen Abbruchfehlers - - - - - absolute tolerance of local truncation error - absolute Toleranz des lokalen Abbruchfehlers - - - - - overestimation of local truncation error - Faktor für die Überbewertung des lokalen Abbruchfehlers - - - - - relax time step raster - - - - - - perform an initial DC analysis - - - - - - maximum step size in seconds - - - - - External transient simulation - - - - - 1bit full adder verilog device - - - - - 1Bit FullAdder - - - - - 2bit full adder verilog device - - - - - 2Bit FullAdder - - - - - gated D latch verilog device - - - - - Gated D-Latch - - - - - 4bit Gray to binary converter verilog device - - - - - 4Bit Gray2Bin - - - - - ground (reference potential) - Masse (Referenzpotential) - - - - Ground - Masse - - - - gyrator (impedance inverter) - Gyrator (Impedanzinverter) - - - - gyrator ratio - Gyratorverhältnis - - - - Gyrator - Gyrator - - - - 1bit half adder verilog device - - - - - 1Bit HalfAdder - - - - - Harmonic balance simulation - - - - - number of harmonics - Anzahl der Harmonischen - - - - Harmonic balance - Harmonic balance - - - - HBT model by Ferdinand-Braun-Institut (FBH), Berlin - - - - - - - - Ignored - - - - - Device operating temperature, Celsius - - - - - Thermal resistance, K/W - - - - - - - - - - - - - - Thermal capacitance - - - - - Scaling factor, number of emitter fingers - - - - - Length of emitter finger, m - - - - - Width of emitter finger, m - - - - - Forward saturation current density, A/um^2 - - - - - Forward current emission coefficient - - - - - Forward thermal activation energy, V, (0 == disables temperature dependence) - - - - - B-E leakage saturation current density, A/um^2 - - - - - B-E leakage emission coefficient - - - - - Limiting resistor of B-E leakage diode, Ohm - - - - - B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - 2nd B-E leakage saturation current density, A/um^2 - - - - - 2nd B-E leakage emission coefficient - - - - - 2nd Limiting resistor of B-E leakage diode, Ohm - - - - - 2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Reverse saturation current density, A/um^2 - - - - - Reverse current emission coefficient - - - - - Reverse thermal activation energy, V, (0 == disables temperature dependence) - - - - - Fraction of Cjc that goes to internal base node - - - - - B-C leakage saturation current density, A/um^2 (0. switches off diode) - - - - - B-C leakage emission coefficient (0. switches off diode) - - - - - Limiting resistor of B-C leakage diode, Ohm - - - - - B-C leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Ideal forward beta - - - - - Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence) - - - - - Ideal reverse beta - - - - - Forward Early voltage, V, (0 == disables Early Effect) - - - - - Reverse Early voltage, V, (0 == disables Early Effect) - - - - - Forward high-injection knee current, A, (0 == disables Webster Effect) - - - - - Reverse high-injection knee current, A, (0 == disables Webster Effect) - - - - - C-E breakdown exponent, (0 == disables collector break-down) - - - - - C-E breakdown voltage, V, (0 == disables collector break-down) - - - - - C-E breakdown factor, (0 == disables collector break-down) - - - - - B-E breakdown voltage, V, (0 == disables emitter break-down) - - - - - Ideal reverse transit time, s - - - - - Extrinsic BC diffusion capacitance, F - - - - - Ideal forward transit time, s - - - - - Temperature coefficient of forward transit time - - - - - Excess transit time coefficient at base push-out - - - - - Smoothing parameter for Thcs - - - - - B-E zero-bias depletion capacitance, F/um^2 - - - - - B-E junction exponential factor - - - - - B-E junction built-in potential, V - - - - - B-C zero-bias depletion capacitance, F/um^2 - - - - - B-C junction exponential factor - - - - - B-C junction built-in potential, V - - - - - not used - - - - - Minimum B-C depletion capacitance (Vbc dependence), F/um^2 - - - - - Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction) - - - - - Fraction of Cmin, lower limit of BC capacitance (Ic dependence) - - - - - Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out) - - - - - Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out) - - - - - Slope of Jk at high currents , Ohm*um^2 - - - - - Voltage shift of base push-out onset, V - - - - - Collector resistance, Ohm/finger - - - - - Emitter resistance, Ohm/finger - - - - - Extrinsic base resistance, Ohm/finger - - - - - Inner Base ohmic resistance, Ohm/finger - - - - - Collector inductance, H - - - - - Emitter inductance, H - - - - - Base inductance, H - - - - - Extrinsic B-C capacitance, F - - - - - Extrinsic base capacitance, F - - - - - Extrinsic collector capacitance, F - - - - - - Flicker-noise coefficient - - - - - - Flicker-noise exponent - - - - - - Flicker-noise frequency exponent - - - - - Burst noise coefficient - - - - - Burst noise exponent - - - - - Burst noise corner frequency, Hz - - - - - Ambient temperature at which the parameters were determined - - - - - FBH HBT - - - - - HICUM Level 0 v1.12 verilog device - - - - - - - - (Modified) saturation current - - - - - - - - Non-ideality coefficient of forward collector current - - - - - - - - Non-ideality coefficient of reverse collector current - - - - - - - - - - - - - - - - forward Early voltage (normalization volt.) - - - - - - - - forward d.c. high-injection roll-off current - - - - - - - - inverse d.c. high-injection roll-off current - - - - - - - - high-injection correction current - - - - - - - high-injection correction factor - - - - - - - - BE saturation current - - - - - - - - BE non-ideality factor - - - - - - - - BE recombination saturation current - - - - - - - - BE recombination non-ideality factor - - - - - - - - BC saturation current - - - - - - - - BC non-ideality factor - - - - - - - - Zero-bias BE depletion capacitance - - - - - - - - BE built-in voltage - - - - - - - - BE exponent factor - - - - - - - - Ratio of maximum to zero-bias value - - - - - - - - low current transit time at Vbici=0 - - - - - - - - Base width modulation contribution - - - - - - - - SCR width modulation contribution - - - - - - - - Storage time in neutral emitter - - - - - - - - Exponent factor for emitter transit time - - - - - - - - Saturation time at high current densities - - - - - - - - Smoothing factor for current dependence - - - - - - - - Storage time at inverse operation - - - - - - - - Low-field collector resistance under emitter - - - - - - - - Voltage dividing ohmic and satur.region - - - - - - - - - - - - Punch-through voltage - - - - - - - - Saturation voltage - - - - - - - - Total zero-bias BC depletion capacitance - - - - - - - - BC built-in voltage - + + + + voltage of high level + Spannung des High-Pegels - - - - - BC exponent factor - + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + Error + Fehler - - - - - Punch-through voltage of BC junction - + + Format Error: +Wrong line start! + Formatierfehler: +Ungültiger Zeilenanfang! - - - - - Zero-bias external BC depletion capacitance + + Format Error: +Unknown component! +%1 + +Do you make use of loadable components? - - - - - External BC built-in voltage - + + Format Error: +Wrong 'component' line format! + Formatierfehler: +Falsches 'component' Zeilenformat! - - - - - External BC exponent factor - + + coplanar line + Koplanarleitung - - - - - Split factor = Cjci0/Cjc0 - + + + + + + + + + + + + name of substrate definition + Name der Substratdefinition - - - - Internal base resistance at zero-bias - - - - - - - - Geometry factor - + + + + + + + + width of the line + Leitungsbreite - - - - - - - - - External base series resistance - - - - - - - - - - - - - Emitter series resistance - - - - - - - - - - - - - External collector series resistance - - - - - - - - - - - - - Substrate transistor transfer saturation current - - - - - - - - Substrate transistor transfer current non-ideality factor - + + + + width of a gap + Schlitzbreite - - - - SC saturation current - - - - - - - - SC non-ideality factor - + + + + length of the line + Leitungslänge - - - - Zero-bias SC depletion capacitance - - - - - - - - SC built-in voltage - + + + + material at the backside of the substrate + Material auf der Rückseite des Substrats - - - - External SC exponent factor - - - - - - - - SC punch-through voltage - + use approximation instead of precise equation + Verwenden der Näherungsformel statt der präzisen Gleichung - - - - - Collector-base isolation (overlap) capacitance - + + Coplanar Line + Koplanarleitung - - - - - Emitter-base oxide capacitance - + + ideal coupler + idealer Koppler - - - - - Exponent factor - + + coupling factor + Koppelfaktor - - - - Prefactor - - - - - - - - M^(1-AF) - + phase shift of coupling path in degree + Phasenverschiebung des Koppelpfades in Grad - - - - - flicker noise exponent factor - + + Coupler + Koppler - - - - - Bandgap-voltage - + + coplanar gap + Koplanarlücke - - - - - Effective emitter bandgap-voltage - + + width of gap between the two lines + Abstand zwischen den Koplanarleitungsenden - - - - - Effective collector bandgap-voltage - + + Coplanar Gap + Koplanarlücke - - - - - Effective substrate bandgap-voltage - + + coplanar open + offene Koplanarleitung - - - - - Coefficient K1 in T-dependent bandgap equation - + + width of gap at end of line + Spaltbreite am Ende der Leitung - - - - - Coefficient K2 in T-dependent bandgap equation - + + Coplanar Open + Offene Koplanarleitung - - - - - Frist-order TC of tf0 - + + coplanar short + kurzgeschlossene Koplanarleitung - - - - - Second-order TC of tf0 - + + Coplanar Short + Kurzgeschlossene Koplanarleitung - - - - - - 1/K^2 - + + coplanar step + Koplanarabsatz - - - - - - - - - Exponent coefficient in transfer current temperature dependence - + + + + width of line 1 + Leitungsbreite 1 - - - - Exponent coefficient in BE junction current temperature dependence - + + + width of line 2 + Leitungsbreite 2 - - - - TC of epi-collector diffusivity - + distance between ground planes + Abstand zwischen den Masseebenen - - - - - Relative TC of satur.drift velocity - + + Coplanar Step + Koplanarabsatz - - - - - Relative TC of vces - + + coupled transmission lines + gekoppelte Übertragungsleitung - - - - - TC of internal base resistance + + characteristic impedance of even mode - - - - TC of external base resistance + characteristic impedance of odd mode - - - - TC of external collector resistance - + + + + electrical length of the line + elektrische Länge der Leitung - - - - TC of emitter resistances + relative dielectric constant of even mode - - - TC of avalanche prefactor + relative dielectric constant of odd mode - - - - TC of avalanche exponential factor + + attenuation factor per length of even mode - - - - - Flag for self-heating calculation + + attenuation factor per length of odd mode - - - - - - - - - - Thermal resistance + + Coupled Transmission Line - - - - - - - - - K/W - + + D flip flop with asynchron reset + D-Speicherglied mit asynchronem Reseteingang - - - - - Ws/K - + + D-FlipFlop + D-Speicherglied - - - - - Temperature for which parameters are valid - + + + dc simulation + DC-Simulation - - - - - - - - - C - + + + + + relative tolerance for convergence + relative Toleranz für Konvergenz - - - - Temperature change for particular transistor - + + + + absolute tolerance for currents + absolute Toleranz für Ströme - - - - - - - - - K - + + + + + absolute tolerance for voltages + absolute Toleranz für Spannungen - - npn HICUM L0 v1.12 - + + put operating points into dataset + Ausgabe der Arbeitspunkte in den Datensatz - - pnp HICUM L0 v1.12 - + + + + + maximum number of iterations until error + maximale Anzahl der Iterationen - - HICUM Level 2 v2.22 verilog device - + + save subcircuit nodes into dataset + Ausgabe der Simulationsergebnisse und Arbeitspunkte von Teilschaltungen in den Datensatz - - - - - GICCR constant - + preferred convergence algorithm + bevorzugter Konvergenz-Algorithmus - - - - - A^2s - + + + + method for solving the circuit matrix + Gleichungslöser für die Schaltkreismatrix - - - - - - Zero-bias hole charge - + + dc block + DC-Sperre - - - - - - - - - Coul - + + dc Block + DC-Sperre - - - - - - High-current correction for 2D and 3D effects - + + dc feed + DC-Zuführung - - - - - - Emitter minority charge weighting factor in HBTs - + + dc Feed + DC-Zuführung - - - - - - Collector minority charge weighting factor in HBTs + + D flip flop with set and reset verilog device - - - - - - B-E depletion charge weighting factor in HBTs + + + + + cross coupled gate transfer function high scaling factor - - - - - B-C depletion charge weighting factor in HBTs + + + + cross coupled gate transfer function low scaling factor - - - - - Internal B-E saturation current + + + + cross coupled gate delay - - - - - - Internal B-E current ideality factor + + D-FlipFlop w/ SR - - - - - - Internal B-E recombination saturation current + + diac (bidirectional trigger diode) - - - - - - Internal B-E recombination current ideality factor + + + (bidirectional) breakover voltage - - - - - Peripheral B-E saturation current - - - - - - - - - Peripheral B-E current ideality factor + (bidirectional) breakover current - - - - - Peripheral B-E recombination saturation current + + + parasitic capacitance - - - - - - Peripheral B-E recombination current ideality factor - + + + + + + emission coefficient + Idealiätsfaktor - - - - - Non-ideality factor for III-V HBTs + + + intrinsic junction resistance - - - - - Base current recombination time constant at B-C barrier for high forward injection + + Diac - - - - - - Internal B-C saturation current - + + + digital simulation + Digitalsimulation - - - - - - Internal B-C current ideality factor - + + type of simulation + Art der Simulation - - - - - External B-C saturation current - + duration of TimeList simulation + Zeitdauer der TimeList Simulation - - - - - - External B-C current ideality factor + + netlist format - - - - - - B-E tunneling saturation current - + + + digital source + Digital-Quelle - - - - - - Exponent factor for tunneling current - + + + number of the port + Tornummer - - - - Specifies the base node connection for the tunneling current - + initial output value + anfänglicher Ausgabewert - - - - - Avalanche current factor - + list of times for changing output value + Zeitenliste für die Veränderung der Ausgabewerte - - - - - - Exponent factor for avalanche current - + + diode + Diode - - - - - - Relative TC for FAVL - + + + + zero-bias junction capacitance + Sperrschichtkapazität bei 0 Volt - - - - - - Relative TC for QAVL - + + + + + + grading coefficient + Gradationskoeffizient - - - - - - Zero bias internal base resistance - + + + + + junction potential + Sperrschichtpotential - - - - - - Factor for geometry dependence of emitter current crowding - + + linear capacitance + konstante Parallelkapazität - - - - - Correction factor for modulation by B-E and B-C space charge layer - + recombination current parameter + Rekombinationsstromparameter - - - - - Ratio of HF shunt to total internal capacitance (lateral NQS effect) - + emission coefficient for Isr + Emissionskoeffizient von Isr - - - - - Ration of internal to total minority charge - + ohmic series resistance + ohmscher Serienwiderstand - - - - - - Forward ideality factor of substrate transfer current - + + + + transit time + Transitzeit - - - - - C-S diode saturation current + high-injection knee current (0=infinity) - - - - - - Ideality factor of C-S diode current - + + + + reverse breakdown voltage + Durchbruchspannung rückwärts - - - - - Transit time for forward operation of substrate transistor - + + + current at reverse breakdown voltage + Strom bei der Durchbruchspannung im Rückwärtsbetrieb - - - - - - Substrate series resistance - + + Bv linear temperature coefficient + linearer Temperaturkoeffizient von Bv - - - - - - Substrate shunt capacitance - + + Rs linear temperature coefficient + linearer Temperaturkoeffizient von Rs - - - - - - Internal B-E zero-bias depletion capacitance - + + Tt linear temperature coefficient + linearer Temperaturkoeffizient von Tt - - - - - - Internal B-E built-in potential - + + Tt quadratic temperature coefficient + quadratischer Temperaturkoeffizient von Tt - - - - - - Internal B-E grading coefficient - + + M linear temperature coefficient + linearer Temperaturkoeffizient von M - - - - - Ratio of maximum to zero-bias value of internal B-E capacitance - + M quadratic temperature coefficient + quadratischer Temperaturkoeffizient von M - - - - - - Peripheral B-E zero-bias depletion capacitance - + + + default area for diode + Skalierungsfaktor der Diode - - - - - - Peripheral B-E built-in potential + + Diode + Diode + + + + data voltage level shifter (digital to analogue) verilog device - - - - - Peripheral B-E grading coefficient + + voltage level - - - - - Ratio of maximum to zero-bias value of peripheral B-E capacitance + + time delay - - - - - - Internal B-C zero-bias depletion capacitance + + D2A Level Shifter - - - - - - Internal B-C built-in potential + + data voltage level shifter (analogue to digital) verilog device + + + + + + + + + + + + + + + + + + + - - - - - Internal B-C grading coefficient + + + V - - - - - - Internal B-C punch-through voltage + + A2D Level Shifter - - - - - - External B-C zero-bias depletion capacitance + + 2to4 demultiplexer verilog device - - - - - - External B-C built-in potential + + 2to4 Demux - - - - - - External B-C grading coefficient + + 3to8 demultiplexer verilog device - - - - - - External B-C punch-through voltage + + 3to8 Demux - - - - - Partitioning factor of parasitic B-C cap + + 4to16 demultiplexer verilog device - - - - - Partitioning factor of parasitic B-E cap + + 4to16 Demux - - - - - - C-S zero-bias depletion capacitance + + externally controlled voltage source - - - - - - C-S built-in potential - + + + voltage in Volts + Spannung in Volt - - - - - - C-S grading coefficient + + Externally Controlled Voltage Source - - - - - - C-S punch-through voltage + + EPFL-EKV MOS 2.6 verilog device - - - - - - Low current forward transit time at VBC=0V + + long = 1, short = 2 - - - - - - Time constant for base and B-C space charge layer width modulation + + length parameter + - - - - Time constant for modelling carrier jam at low VCE + + + + + + + + m - - - - - - Neutral emitter storage time + + Width parameter - - - - - Exponent factor for current dependence of neutral emitter storage time + parallel multiple device number - - - - - Saturation time constant at high current densities + series multiple device number - - - - - - Smoothing factor for current dependence of base and collector transit time + + gate oxide capacitance per unit area - - - - - - Partitioning factor for base and collector portion + + F/m**2 - - - - - Internal collector resistance at low electric field + metallurgical junction depth - - - - - Voltage separating ohmic and saturation velocity regime + channel width correction - - - - - Internal C-E saturation voltage + channel length correction - - - - - Collector punch-through voltage + long channel threshold voltage - - - - - Storage time for inverse operation + body effect parameter - - - - - - Total parasitic B-E capacitance + + V**(1/2) - - - - - - Total parasitic B-C capacitance + + bulk Fermi potential - - - - - Factor for additional delay time of minority charge - + + + transconductance parameter + Transkonduktanzparameter - - - - - - Factor for additional delay time of transfer current + + + A/V**2 - - - - Flag for turning on and off of vertical NQS effect + mobility reduction coefficient - - - - - - Flicker noise coefficient + + + + + + 1/V - - - - - Flicker noise exponent factor + mobility coefficient - - - - - Flag for determining where to tag the flicker noise source + + + + V/m - - - - - - Scaling factor for collector minority charge in direction of emitter width + + + longitudinal critical field - - - - - - Scaling factor for collector minority charge in direction of emitter length + + depletion length coefficient - - - - - Bandgap voltage extrapolated to 0 K - - - - - - - - - First order relative TC of parameter T0 + narrow-channel effect coefficient - - - - - - Second order relative TC of parameter T0 + + reverse short channel charge density - - - - - - Temperature exponent for RCI0 + + A*s/m**2 - - - - - Relative TC of saturation drift velocity + characteristic length - - - - - Relative TC of VCES + threshold voltage temperature coefficient - - - - - - Temperature exponent of internal base resistance + + V/K - - - - - Temperature exponent of external base resistance + mobility temperature coefficient - - - - - Temperature exponent of external collector resistance + Longitudinal critical field temperature exponent - - - - - Temperature exponent of emitter resistance + Ibb temperature coefficient - - - - - - Temperature exponent of mobility in substrate transistor transit time + + 1/K - - - - Effective emitter bandgap voltage - - - - - - - - Effective collector bandgap voltage + heavily doped diffusion length - - - - Effective substrate bandgap voltage + drain/source diffusion sheet resistance - - - - - Coefficient K1 in T-dependent band-gap equation + + Ohm/square - - - - Coefficient K2 in T-dependent band-gap equation + source contact resistance - - - - - Exponent coefficient in B-E junction current temperature dependence + + + + + + + + + + + + + Ohm - - - - - - Relative TC of forward current gain for V2.1 model + + drain contact resistance - - - - Flag for turning on and off self-heating effect + gate to source overlap capacitance - - - - - J/W + + + + + F/m - - - - - Flag for compatibility with v2.1 model (0=v2.1) + + gate to drain overlap capacitance - - - - - - Temperature at which parameters are specified + + gate to bulk overlap capacitance - - - - - Temperature change w.r.t. chip temperature for particular transistor + first impact ionization coefficient - - HICUM L2 v2.22 + + 1/m - - HICUM Level 0 v1.2 verilog device + + second impact ionization coefficient - - - - reverse Early voltage (normalization volt.) + + saturation voltage factor for impact ionization - - - flag for turning on base related critical current + area related theshold voltage mismatch parameter - - - - Smoothing factor for the d.c. injection width + + V*m - - - - BE charge built-in voltage for d.c. transfer current + + area related gain mismatch parameter - - - charge BE exponent factor for d.c. transfer current + area related body effect mismatch parameter - - - - BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current + + sqrt(V)*m - - - TC of iqf + + + + + + + + + + + A + + + + + + - - - Exponent factor for temperature dependent thermal resistance + F - - npn HICUM L0 v1.2 + + + diode relative area - pnp HICUM L0 v1.2 + charge partition parameter - - HICUM Level 0 v1.2g verilog device - + + + + + + + + parameter measurement temperature + Temperatur bei der die Modellparameter gemessen wurden - - high-injection roll-off current + + + + + + + + Celsius - - TC of iqf (bandgap coefficient of zero bias hole charge) + + EPFL-EKV NMOS 2.6 - - TC of avalanche prefactor, identical to alfav of Hicum/L2 + + EPFL-EKV PMOS 2.6 - - TC of avalanche exponential factor, identical to alqav of Hicum/L2 + + equation defined device - - Emitter part coefficient of the zero bias hole charge temperature variation + + type of equations - Collector part coefficient of the zero bias hole charge temperature variation + number of branches - - Bandgap TC parameter of ver + + + current equation - - Bandgap TC parameter of vef + + + charge equation - - Specific recombination current at the BC barrier for high forward injection + + Equation Defined Device - - npn HICUM L0 v1.2g - + + equation + Gleichung - - pnp HICUM L0 v1.2g - + + + + Equation + Gleichung - - HICUM Level 0 v1.3 verilog device - + + put result into dataset + Ergebnis in den Datensatz ausgeben - - Flag for using third order solution for transfer current + + externally driven transient simulation - - bias dependence for reverse Early voltage - + + + integration method + Integrationsverfahren - - Flag for turning temperature dependence of tef0 on and off - + + + order of integration method + Ordnung des Integrationsverfahren - TC of Reverse Early voltage - + + initial step size in seconds + Anfangsschrittweite in Sekunden - TC of AVER - + + minimum step size in seconds + minimale Schrittweite in Sekunden - - Bandgap difference between base and BE-junction - + + + relative tolerance of local truncation error + relative Toleranz des lokalen Abbruchfehlers - Frist-order TC of iqfh - - - - - Second-order TC of iqfh - - - - - npn HICUM L0 v1.3 - + + absolute tolerance of local truncation error + absolute Toleranz des lokalen Abbruchfehlers - - pnp HICUM L0 v1.3 - + + + overestimation of local truncation error + Faktor für die Überbewertung des lokalen Abbruchfehlers - - HICUM Level 2 v2.1 verilog device + + + relax time step raster - - Partitioning factor of parasitic B-C capacitance + + + perform an initial DC analysis - - Noise factor for internal base resistance + + + maximum step size in seconds - - HICUM L2 v2.1 + + External transient simulation - - HICUM Level 2 v2.23 verilog device + + 1bit full adder verilog device - - HICUM L2 v2.23 + + 1Bit FullAdder - - HICUM Level 2 v2.24 verilog device + + 2bit full adder verilog device - - HICUM L2 v2.24 + + 2Bit FullAdder - - hicumL2V2p31n verilog device + + gated D latch verilog device - - Weight factor for the low current minority charge + + Gated D-Latch - - Parameter describing the slope of hjEi(VBE) + + 4bit Gray to binary converter verilog device - - Smoothing parameter for hjEi(VBE) at high voltage + + 4Bit Gray2Bin - - Time constant for modeling carrier jam at low VCE - + + ground (reference potential) + Masse (Referenzpotential) - Barrier voltage - - - - - Normalization parameter - - - - - Smoothing parameter for barrier voltage - - - - - fitting factor for critical current - - - - - Flag for turning on and off of correlated noise implementation - + Ground + Masse - - Emitter resistance flicker noise coefficient - + + gyrator (impedance inverter) + Gyrator (Impedanzinverter) - - Emitter resistance flicker noise exponent factor - + + gyrator ratio + Gyratorverhältnis - - Bandgap difference between B and B-E junction used for hjEi0 and hf0 - + + Gyrator + Gyrator - - Temperature coefficient for ahjEi + + 1bit half adder verilog device - - Temperature coefficient for hjEi0 + + 1Bit HalfAdder - - Temperature coefficient for Rth + + Harmonic balance simulation - - First order relative TC of parameter Rth - + + number of harmonics + Anzahl der Harmonischen - - HICUM L2 V2.31 - + + Harmonic balance + Harmonic balance @@ -12095,7 +7790,7 @@ Falsches 'component' Zeilenformat! - + ERROR: No file name in SPICE component "%1". FEHLER: In der SPICE-Komponente "%1" ist kein Dateiname angegeben. @@ -12518,11 +8213,15 @@ Falsches 'component' Zeilenformat! spannungsgesteuerte Stromquelle - voltage controlled voltage source spannungsgesteuerte Spannungsquelle + + + voltage controlled resistor + + resistance gain @@ -12557,7 +8256,7 @@ Falsches 'component' Zeilenformat! - + ERROR: No file name in %1 component "%2". @@ -12720,7 +8419,7 @@ Falsches 'component' Zeilenformat! <ungültig> - + invalid ungültig @@ -12829,7 +8528,7 @@ Falsches 'component' Zeilenformat! - + Successfully exported @@ -12852,8 +8551,8 @@ Use PNG, JPEG or SVG graphics! - - + + verilog-a user devices @@ -12912,14 +8611,14 @@ Use PNG, JPEG or SVG graphics! - + diagrams - + paintings @@ -13038,16 +8737,16 @@ Setzte Octave Pfad in Einstellungen. - + - + untitled unbenannt - + Format Error: 'Painting' field is not closed! @@ -13223,17 +8922,17 @@ Unbekanntes Feld! FEHLER: Die Unterschaltung "%1" kann nicht geladen werden. - + WARNING: Skipping library component "%1". - - ERROR: Cannot load library component "%1". - FEHLER: Die Bibliothekskomponente "%1" kann nicht geladen werden. + + ERROR: "%1": Cannot load library component "%2" from "%3" + - + WARNING: Ignore simulation component in subcircuit "%1". WARNUNG: Die Simulationskomponente in der Unterschaltung "%1" wird ignoriert. @@ -13243,7 +8942,7 @@ Unbekanntes Feld! - + ERROR: Only one digital simulation allowed. FEHLER: Es ist nur eine Digitalsimulation erlaubt. @@ -13372,11 +9071,17 @@ a substrate with lower permittivity and larger height. Cannot save settings file ! Einstellungen konnten nicht gespeichert werden! + + + Quarter wave filters do not allow low-pass nor high-pass masks + + + QucsActiveFilter - + &File &Datei @@ -13386,7 +9091,29 @@ a substrate with lower permittivity and larger height. V&erlassen - + + &View + + + + + &Console + + + + + Enables/disables the filter calculation console + + + + + Console + +Enables/disables the filter calculation console + + + + &Help &Hilfe @@ -13406,30 +9133,30 @@ a substrate with lower permittivity and larger height. Über Qt... - - + + Passband attenuation, Ap (dB) - + Stopband attenuation, As (dB) - - Cuttof frequency, Fc (Hz) + + Cutoff frequency, Fc (Hz) - - + + Stopband frequency, Fs (Hz) - + Passband ripple Rp(dB) @@ -13439,7 +9166,7 @@ a substrate with lower permittivity and larger height. - + Filter order @@ -13489,27 +9216,61 @@ a substrate with lower permittivity and larger height. - - Calculation console + + Low Pass - - Filter topology + + General filter amplitude-frequency response - - Filter type: + + + + Unable to implement filter with such parameters and topology +Change parameters and/or topology and try again! + + + + + + Filter calculation was successful - LowPass + Filter calculation terminated with error! + + + + + Filter calculation terminated with error + + + + + Lower cutoff frequency, Fl (Hz) + + + + + Copyright (C) 2014, 2015 by + + + + + Filter topology + Filter type: + + + + High Pass @@ -13535,62 +9296,45 @@ a substrate with lower permittivity and larger height. - + Cauer section - - General amplitude frequency response - - - - - Filter topology preview (one stage) - - - - + Filter parameters - + Transfer function and Topology - - General filter amplidure-frequency response - - - - + Filter topology preview - + Filter calculation console - + + + Ready. + Bereit. + + + Upper cutoff frequency of band-pass/band-stop filter is less than lower. Unable to implement such filter. Change parameters and try again. - - - - Unable to implement filter with such parameters and topology -Change parapeters and/or topology and try again! - - - - + Unable to use Cauer section for Chebyshev or Butterworth frequency response. Try to use another topology. @@ -13606,40 +9350,28 @@ frequency response. Try to use another topology. Function will be implemented in future version - - - -Filter calculation was sucessfull - - - - - -Filter calculation terminated with error - - Upper cutoff frequency, Fu (Hz) - - Lower cuttoff frequency, Fl (Hz) + + Transient bandwidth, TW (Hz) - - Transient bandwidth, TW (Hz) + + Error! - + Active filter design - + About... Über... @@ -13651,12 +9383,7 @@ Active Filter synthesis program - - Copyright (C) 2014 by - - - - + About Qt Über Qt @@ -13664,7 +9391,7 @@ Active Filter synthesis program QucsApp - + Schematic Schaltkreise @@ -13680,42 +9407,42 @@ Active Filter synthesis program - + VHDL Sources VHDL Quellen - - + + Verilog Sources Verilog Quellen - - + + Verilog-A Sources Verilog-A Quellen - - + + Octave Scripts Octave Scripte - + Spice Files Spice Dateien - + Any File Alle Dateien - + The schematic search path has been refreshed. @@ -13735,7 +9462,7 @@ Active Filter synthesis program Schaltkreise - + New Neu @@ -13820,13 +9547,13 @@ Active Filter synthesis program - + - + @@ -13849,7 +9576,7 @@ Active Filter synthesis program Fehler - + Cannot open "%1". Kann "%1" nicht öffnen. @@ -13861,8 +9588,16 @@ Active Filter synthesis program Die Bibliotheksdatei ist beschädigt. - - + + + + + Search results + + + + + @@ -13881,13 +9616,18 @@ Active Filter synthesis program Information - + Default icon not found: %1.png Standardicon nicht gefunden: %1.png - + + verilog-a user devices + + + + -port @@ -13898,13 +9638,13 @@ Active Filter synthesis program - + The document contains unsaved changes! - + Do you want to save the changes before copying? Änderungen vor dem Kopieren speichern? @@ -13915,13 +9655,13 @@ Active Filter synthesis program - + &Save &Speichern - + Copy file Datei kopieren @@ -13955,31 +9695,31 @@ Active Filter synthesis program - + Warning Warnung - + This will delete the file permanently! Continue ? Dies löscht die Datein endgültig! Weiter? - + No Nein - + - + Yes Ja - + unknown unbekannt @@ -14140,7 +9880,7 @@ Active Filter synthesis program - + @@ -14154,7 +9894,7 @@ Active Filter synthesis program Bereit. - + Creating new text editor... Erstelle neuen Text Editor... @@ -14218,12 +9958,12 @@ Active Filter synthesis program - + Cancel Abbrechen - + Cannot overwrite an open document @@ -14238,7 +9978,7 @@ Active Filter synthesis program - + Closing file... @@ -14262,10 +10002,6 @@ Active Filter synthesis program Open examples directory... - - OK - Ok - Printing... @@ -16063,10 +11799,6 @@ About Qt by Trolltech Warnings in last simulation! Press F5 - - About... - Über... - QucsAttenuator @@ -16334,7 +12066,7 @@ Einfacher Texteditor für Qucs QucsFilter - + &File &Datei @@ -16374,7 +12106,7 @@ Einfacher Texteditor für Qucs - + Filter type: @@ -16410,29 +12142,29 @@ Einfacher Texteditor für Qucs - + Corner frequency: - + Stop frequency: - + Stop band frequency: - - + + Pass band ripple: - + Stop band attenuation: @@ -16500,19 +12232,19 @@ Filter synthesis program - + Result: - + Error Fehler - + Stop frequency must be greater than start frequency. @@ -16667,17 +12399,22 @@ Enables/disables the table of contents Über - + Component Selection - - Search... + + Search Lib Components - + + Clear + + + + Component @@ -16692,13 +12429,19 @@ Enables/disables the table of contents - + About... Über... Library Manager for Qucs + + + + + + Copyright (C) 2011-2015 Qucs Team @@ -16710,7 +12453,7 @@ Enables/disables the table of contents - + QucsLib Help @@ -16730,14 +12473,17 @@ Enables/disables the table of contents - - Search result - Suchergebnisse + + + + + Search results + - + - + @@ -16746,13 +12492,13 @@ Enables/disables the table of contents Fehler - + Cannot open "%1". Kann "%1" nicht öffnen. - + @@ -16760,21 +12506,6 @@ Enables/disables the table of contents Library is corrupt. Die Bibliotheksdatei ist beschädigt. - - - Search Library Component - Komponente in der Bibliothek suchen - - - - Result - - - - - No appropriate component found. - - QucsSettingsDialog @@ -17783,7 +13514,7 @@ Edits the symbol for this schematic - + Error Fehler @@ -17801,7 +13532,7 @@ Set the admsXml location on the application settings. - + ERROR: Cannot create library file "%s". @@ -17810,83 +13541,46 @@ Set the admsXml location on the application settings. SearchDialog - - - - Dialog Dialog - - - - Text to search for Zu suchender Text - - - - Text to replace with Text ersetzen mit - - - - Ask before replacing Vor dem Verschieben löschen - - - - Case sensitive - - - - Whole words only Nur ganze Worte - - - - Search backwards Rückwärtssuche - - - - Next - - - - - Close Schließen @@ -17900,29 +13594,6 @@ Set the admsXml location on the application settings. Search Text Suchtext - - - The search result contains all components whose -name contains the search string. All libraries -are included in the search. - - - - - Search string: - Suche-String: - - - - Search - Suchen - - - - - Search result - Suchergebnisse - SettingsDialog @@ -18365,7 +14036,7 @@ are included in the search. SymbolWidget - + Symbol: Symbol: @@ -18374,6 +14045,13 @@ are included in the search. ! Drag n'Drop me ! ! Zieh mich rüber ! + + + Warning: Symbol '%1' missing in Qucs Library. +Drag and Drop may still work. +Please contact the developers. + + TextDoc diff --git a/qucs/translations/qucs_en.ts b/qucs/translations/qucs_en.ts index 205f4b7574..409f0a366f 100644 --- a/qucs/translations/qucs_en.ts +++ b/qucs/translations/qucs_en.ts @@ -3525,62 +3525,6 @@ Resistor color code computation program - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - @@ -3736,10 +3680,6 @@ Resistor color code computation program - - - - polarity @@ -3944,10 +3884,6 @@ Resistor color code computation program - - - - @@ -4088,5706 +4024,1477 @@ Resistor color code computation program - - bsim3v34nMOS verilog device + + + + + + + + + + + simulation temperature + + + + + capacitor + capacitance in Farad + + + + initial voltage for transient simulation + + + + + + + + + schematic symbol + + + + + Capacitor + + + + + current controlled current source + + + + + + + forward transfer factor + + + + + + + + + + + + + + + + delay time + + + + + Current Controlled Current Source + + + + + current controlled voltage source + + + + + Current Controlled Voltage Source + + + + + circulator + + + + + reference impedance of port 1 + + + + reference impedance of port 2 + + + + reference impedance of port 3 + + + + + Circulator + + + + + coaxial transmission line + + + + + + relative permittivity of dielectric + + + + + + specific resistance of conductor + + + + + + relative permeability of conductor + + + + inner diameter of shield + + + + diameter of inner conductor + + + + + mechanical length of the line + + + + + + + loss tangent + + + + + Coaxial Line + + + + + 1bit comparator verilog device + + + + + 1Bit Comparator + + + + + 2bit comparator verilog device + + + + + 2Bit Comparator + + + + + 4bit comparator verilog device + + + + + 4Bit Comparator + + + + + number of input ports + + + - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - simulation temperature - - - - - bsim3v34nMOS - - - - - bsim3v34pMOS verilog device - - - - - bsim3v34pMOS - - - - - bsim4v30nMOS verilog device - - - - - bsim4v30nMOS - - - - - bsim4v30pMOS verilog device - - - - - bsim4v30pMOS - - - - - capacitor - - - - - capacitance in Farad - - - - - initial voltage for transient simulation - - - - - - - - - - schematic symbol - - - - - Capacitor - - - - - current controlled current source - - - - - - - forward transfer factor - - - - - - - - - - - - - - - - delay time - - - - - Current Controlled Current Source - - - - - current controlled voltage source - - - - - Current Controlled Voltage Source - - - - - circulator - - - - - reference impedance of port 1 - - - - - reference impedance of port 2 - - - - - reference impedance of port 3 - - - - - Circulator - - - - - coaxial transmission line - - - - - - relative permittivity of dielectric - - - - - - - specific resistance of conductor - - - - - - - relative permeability of conductor - - - - - inner diameter of shield - - - - - diameter of inner conductor - - - - - - mechanical length of the line - - - - - - - - loss tangent - - - - - Coaxial Line - - - - - 1bit comparator verilog device - - - - - 1Bit Comparator - - - - - 2bit comparator verilog device - - - - - 2Bit Comparator - - - - - 4bit comparator verilog device - - - - - 4Bit Comparator - - - - - number of input ports - - - - - - - - voltage of high level - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Error - - - - - Format Error: -Wrong line start! - - - - - Format Error: -Unknown component! -%1 - -Do you make use of loadable components? - - - - - Format Error: -Wrong 'component' line format! - - - - - coplanar line - - - - - - - - - - - - - - - name of substrate definition - - - - - - - - - - - - width of the line - - - - - - - - width of a gap - - - - - - - - length of the line - - - - - - - - material at the backside of the substrate - - - - - use approximation instead of precise equation - - - - - Coplanar Line - - - - - ideal coupler - - - - - coupling factor - - - - - phase shift of coupling path in degree - - - - - Coupler - - - - - coplanar gap - - - - - width of gap between the two lines - - - - - Coplanar Gap - - - - - coplanar open - - - - - width of gap at end of line - - - - - Coplanar Open - - - - - coplanar short - - - - - Coplanar Short - - - - - coplanar step - - - - - - - width of line 1 - - - - - - - width of line 2 - - - - - distance between ground planes - - - - - Coplanar Step - - - - - coupled transmission lines - - - - - characteristic impedance of even mode - - - - - characteristic impedance of odd mode - - - - - - - - electrical length of the line - - - - - relative dielectric constant of even mode - - - - - relative dielectric constant of odd mode - - - - - attenuation factor per length of even mode - - - - - attenuation factor per length of odd mode - - - - - Coupled Transmission Line - - - - - D flip flop with asynchron reset - - - - - D-FlipFlop - - - - - - dc simulation - - - - - - - - relative tolerance for convergence - - - - - - - - absolute tolerance for currents - - - - - - - - absolute tolerance for voltages - - - - - put operating points into dataset - - - - - - - - maximum number of iterations until error - - - - - save subcircuit nodes into dataset - - - - - preferred convergence algorithm - - - - - - - method for solving the circuit matrix - - - - - dc block - - - - - dc Block - - - - - dc feed - - - - - dc Feed - - - - - D flip flop with set and reset verilog device - - - - - - - - cross coupled gate transfer function high scaling factor - - - - - - - - cross coupled gate transfer function low scaling factor - - - - - - - - cross coupled gate delay - - - - - D-FlipFlop w/ SR - - - - - diac (bidirectional trigger diode) - - - - - - (bidirectional) breakover voltage - - - - - (bidirectional) breakover current - - - - - - - parasitic capacitance - - - - - - - - - emission coefficient - - - - - - - intrinsic junction resistance - - - - - Diac - - - - - - digital simulation - - - - - type of simulation - - - - - duration of TimeList simulation - - - - - netlist format - - - - - - digital source - - - - - - number of the port - - - - - initial output value - - - - - list of times for changing output value - - - - - diode - - - - - - - zero-bias junction capacitance - - - - - - - - - grading coefficient - - - - - - - - junction potential - - - - - linear capacitance - - - - - recombination current parameter - - - - - emission coefficient for Isr - - - - - ohmic series resistance - - - - - - - transit time - - - - - high-injection knee current (0=infinity) - - - - - - - reverse breakdown voltage - - - - - - - current at reverse breakdown voltage - - - - - Bv linear temperature coefficient - - - - - Rs linear temperature coefficient - - - - - Tt linear temperature coefficient - - - - - Tt quadratic temperature coefficient - - - - - M linear temperature coefficient - - - - - M quadratic temperature coefficient - - - - - - default area for diode - - - - - Diode - - - - - data voltage level shifter (digital to analogue) verilog device - - - - - - voltage level - - - - - - time delay - - - - - D2A Level Shifter - - - - - data voltage level shifter (analogue to digital) verilog device - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - V - - - - - A2D Level Shifter - - - - - 2to4 demultiplexer verilog device - - - - - 2to4 Demux - - - - - 3to8 demultiplexer verilog device - - - - - 3to8 Demux - - - - - 4to16 demultiplexer verilog device - - - - - 4to16 Demux - - - - - externally controlled voltage source - - - - - - voltage in Volts - - - - - Externally Controlled Voltage Source - - - - - EPFL-EKV MOS 2.6 verilog device - - - - - long = 1, short = 2 - - - - - length parameter - - - - - - - - - - - - - m - - - - - Width parameter - - - - - parallel multiple device number - - - - - series multiple device number - - - - - gate oxide capacitance per unit area - - - - - F/m**2 - - - - - metallurgical junction depth - - - - - channel width correction - - - - - channel length correction - - - - - long channel threshold voltage - - - - - body effect parameter - - - - - V**(1/2) - - - - - bulk Fermi potential - - - - - - - transconductance parameter - - - - - - A/V**2 - - - - - mobility reduction coefficient - - - - - - - - - - - - - 1/V - - - - - mobility coefficient - - - - - - - V/m - - - - - - longitudinal critical field - - - - - depletion length coefficient - - - - - narrow-channel effect coefficient - - - - - reverse short channel charge density - - - - - A*s/m**2 - - - - - characteristic length - - - - - threshold voltage temperature coefficient - - - - - - - - - - - - - V/K - - - - - mobility temperature coefficient - - - - - Longitudinal critical field temperature exponent - - - - - Ibb temperature coefficient - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1/K - - - - - heavily doped diffusion length - - - - - drain/source diffusion sheet resistance - - - - - Ohm/square - - - - - source contact resistance - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Ohm - - - - - drain contact resistance - - - - - gate to source overlap capacitance - - - - - - - - F/m - - - - - gate to drain overlap capacitance - - - - - gate to bulk overlap capacitance - - - - - first impact ionization coefficient - - - - - 1/m - - - - - second impact ionization coefficient - - - - - saturation voltage factor for impact ionization - - - - - area related theshold voltage mismatch parameter - - - - - V*m - - - - - area related gain mismatch parameter - - - - - area related body effect mismatch parameter - - - - - sqrt(V)*m - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - F - - - - - - diode relative area - - - - - charge partition parameter - - - - - - - - - - - parameter measurement temperature - - - - - - - - - - - Celsius - - - - - EPFL-EKV NMOS 2.6 - - - - - EPFL-EKV PMOS 2.6 - - - - - equation defined device - - - - - type of equations - - - - - number of branches - - - - - - current equation - - - - - - charge equation - - - - - Equation Defined Device - - - - - equation - - - - - - - Equation - - - - - put result into dataset - - - - - externally driven transient simulation - - - - - - integration method - - - - - - order of integration method - - - - - - initial step size in seconds - - - - - - minimum step size in seconds - - - - - - relative tolerance of local truncation error - - - - - - absolute tolerance of local truncation error - - - - - - overestimation of local truncation error - - - - - - relax time step raster - - - - - - perform an initial DC analysis - - - - - - maximum step size in seconds - - - - - External transient simulation - - - - - 1bit full adder verilog device - - - - - 1Bit FullAdder - - - - - 2bit full adder verilog device - - - - - 2Bit FullAdder - - - - - gated D latch verilog device - - - - - Gated D-Latch - - - - - 4bit Gray to binary converter verilog device - - - - - 4Bit Gray2Bin - - - - - ground (reference potential) - - - - - Ground - - - - - gyrator (impedance inverter) - - - - - gyrator ratio - - - - - Gyrator - - - - - 1bit half adder verilog device - - - - - 1Bit HalfAdder - - - - - Harmonic balance simulation - - - - - number of harmonics - - - - - Harmonic balance - - - - - HBT model by Ferdinand-Braun-Institut (FBH), Berlin - - - - - - - - Ignored - - - - - Device operating temperature, Celsius - - - - - Thermal resistance, K/W - - - - - - - - - - - - - - Thermal capacitance - - - - - Scaling factor, number of emitter fingers - - - - - Length of emitter finger, m - - - - - Width of emitter finger, m - - - - - Forward saturation current density, A/um^2 - - - - - Forward current emission coefficient - - - - - Forward thermal activation energy, V, (0 == disables temperature dependence) - - - - - B-E leakage saturation current density, A/um^2 - - - - - B-E leakage emission coefficient - - - - - Limiting resistor of B-E leakage diode, Ohm - - - - - B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - 2nd B-E leakage saturation current density, A/um^2 - - - - - 2nd B-E leakage emission coefficient - - - - - 2nd Limiting resistor of B-E leakage diode, Ohm - - - - - 2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Reverse saturation current density, A/um^2 - - - - - Reverse current emission coefficient - - - - - Reverse thermal activation energy, V, (0 == disables temperature dependence) - - - - - Fraction of Cjc that goes to internal base node - - - - - B-C leakage saturation current density, A/um^2 (0. switches off diode) - - - - - B-C leakage emission coefficient (0. switches off diode) - - - - - Limiting resistor of B-C leakage diode, Ohm - - - - - B-C leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Ideal forward beta - - - - - Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence) - - - - - Ideal reverse beta - - - - - Forward Early voltage, V, (0 == disables Early Effect) - - - - - Reverse Early voltage, V, (0 == disables Early Effect) - - - - - Forward high-injection knee current, A, (0 == disables Webster Effect) - - - - - Reverse high-injection knee current, A, (0 == disables Webster Effect) - - - - - C-E breakdown exponent, (0 == disables collector break-down) - - - - - C-E breakdown voltage, V, (0 == disables collector break-down) - - - - - C-E breakdown factor, (0 == disables collector break-down) - - - - - B-E breakdown voltage, V, (0 == disables emitter break-down) - - - - - Ideal reverse transit time, s - - - - - Extrinsic BC diffusion capacitance, F - - - - - Ideal forward transit time, s - - - - - Temperature coefficient of forward transit time - - - - - Excess transit time coefficient at base push-out - - - - - Smoothing parameter for Thcs - - - - - B-E zero-bias depletion capacitance, F/um^2 - - - - - B-E junction exponential factor - - - - - B-E junction built-in potential, V - - - - - B-C zero-bias depletion capacitance, F/um^2 - - - - - B-C junction exponential factor - - - - - B-C junction built-in potential, V - - - - - not used - - - - - Minimum B-C depletion capacitance (Vbc dependence), F/um^2 - - - - - Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction) - - - - - Fraction of Cmin, lower limit of BC capacitance (Ic dependence) - - - - - Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out) - - - - - Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out) - - - - - Slope of Jk at high currents , Ohm*um^2 - - - - - Voltage shift of base push-out onset, V - - - - - Collector resistance, Ohm/finger - - - - - Emitter resistance, Ohm/finger - - - - - Extrinsic base resistance, Ohm/finger - - - - - Inner Base ohmic resistance, Ohm/finger - - - - - Collector inductance, H - - - - - Emitter inductance, H - - - - - Base inductance, H - - - - - Extrinsic B-C capacitance, F - - - - - Extrinsic base capacitance, F - - - - - Extrinsic collector capacitance, F - - - - - - Flicker-noise coefficient - - - - - - Flicker-noise exponent - - - - - - Flicker-noise frequency exponent - - - - - Burst noise coefficient - - - - - Burst noise exponent - - - - - Burst noise corner frequency, Hz - - - - - Ambient temperature at which the parameters were determined - - - - - FBH HBT - - - - - HICUM Level 0 v1.12 verilog device - - - - - - - - (Modified) saturation current - - - - - - - - Non-ideality coefficient of forward collector current - - - - - - - - Non-ideality coefficient of reverse collector current - - - - - - - - - - - - - - - - forward Early voltage (normalization volt.) - - - - - - - - forward d.c. high-injection roll-off current - - - - - - - - inverse d.c. high-injection roll-off current - - - - - - - - high-injection correction current - - - - - - - high-injection correction factor - - - - - - - - BE saturation current - - - - - - - - BE non-ideality factor - - - - - - - - BE recombination saturation current - - - - - - - - BE recombination non-ideality factor - - - - - - - - BC saturation current - - - - - - - - BC non-ideality factor - - - - - - - - Zero-bias BE depletion capacitance - - - - - - - - BE built-in voltage - - - - - - - - BE exponent factor - - - - - - - - Ratio of maximum to zero-bias value - - - - - - - - low current transit time at Vbici=0 - - - - - - - - Base width modulation contribution - - - - - - - - SCR width modulation contribution - - - - - - - - Storage time in neutral emitter - - - - - - - - Exponent factor for emitter transit time - - - - - - - - Saturation time at high current densities - - - - - - - - Smoothing factor for current dependence - - - - - - - - Storage time at inverse operation - - - - - - - - Low-field collector resistance under emitter - - - - - - - - Voltage dividing ohmic and satur.region - - - - - - - - - - - - Punch-through voltage - - - - - - - - Saturation voltage - - - - - - - - Total zero-bias BC depletion capacitance - - - - - - - - BC built-in voltage + + + + voltage of high level - - - - - BC exponent factor + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + Error - - - - - Punch-through voltage of BC junction + + Format Error: +Wrong line start! - - - - - Zero-bias external BC depletion capacitance + + Format Error: +Unknown component! +%1 + +Do you make use of loadable components? - - - - - External BC built-in voltage + + Format Error: +Wrong 'component' line format! - - - - - External BC exponent factor + + coplanar line - - - - - Split factor = Cjci0/Cjc0 + + + + + + + + + + + + name of substrate definition - - - - Internal base resistance at zero-bias - - - - - - - - Geometry factor + + + + + + + + width of the line - - - - - - - - - External base series resistance - - - - - - - - - - - - - Emitter series resistance - - - - - - - - - - - - - External collector series resistance - - - - - - - - - - - - - Substrate transistor transfer saturation current - - - - - - - - Substrate transistor transfer current non-ideality factor + + + + width of a gap - - - - SC saturation current - - - - - - - - SC non-ideality factor + + + + length of the line - - - - Zero-bias SC depletion capacitance - - - - - - - - SC built-in voltage + + + + material at the backside of the substrate - - - - External SC exponent factor - - - - - - - - SC punch-through voltage + use approximation instead of precise equation - - - - - Collector-base isolation (overlap) capacitance + + Coplanar Line - - - - - Emitter-base oxide capacitance + + ideal coupler - - - - - Exponent factor + + coupling factor - - - - Prefactor - - - - - - - - M^(1-AF) + phase shift of coupling path in degree - - - - - flicker noise exponent factor + + Coupler - - - - - Bandgap-voltage + + coplanar gap - - - - - Effective emitter bandgap-voltage + + width of gap between the two lines - - - - - Effective collector bandgap-voltage + + Coplanar Gap - - - - - Effective substrate bandgap-voltage + + coplanar open - - - - - Coefficient K1 in T-dependent bandgap equation + + width of gap at end of line - - - - - Coefficient K2 in T-dependent bandgap equation + + Coplanar Open - - - - - Frist-order TC of tf0 + + coplanar short - - - - - Second-order TC of tf0 + + Coplanar Short - - - - - - 1/K^2 + + coplanar step - - - - - - - - - Exponent coefficient in transfer current temperature dependence + + + + width of line 1 - - - - Exponent coefficient in BE junction current temperature dependence + + + width of line 2 - - - - TC of epi-collector diffusivity + distance between ground planes - - - - - Relative TC of satur.drift velocity + + Coplanar Step - - - - - Relative TC of vces + + coupled transmission lines - - - - - TC of internal base resistance + + characteristic impedance of even mode - - - - TC of external base resistance + characteristic impedance of odd mode - - - - TC of external collector resistance + + + + electrical length of the line - - - - TC of emitter resistances + relative dielectric constant of even mode - - - TC of avalanche prefactor - - - - - - - TC of avalanche exponential factor - - - - - - - - Flag for self-heating calculation + relative dielectric constant of odd mode - - - - - - - - - Thermal resistance - - - - - - - - - - - - K/W - - - - - - - - Ws/K + attenuation factor per length of even mode - - - - Temperature for which parameters are valid - - - - - - - - - - - - C + attenuation factor per length of odd mode - - - - - Temperature change for particular transistor + + Coupled Transmission Line - - - - - - - - - K + + D flip flop with asynchron reset - - npn HICUM L0 v1.12 + + D-FlipFlop - - pnp HICUM L0 v1.12 + + + dc simulation - - HICUM Level 2 v2.22 verilog device + + + + + relative tolerance for convergence - - - - - - GICCR constant + + + + + absolute tolerance for currents - - - - - A^2s + + + + + absolute tolerance for voltages - - - - - Zero-bias hole charge + put operating points into dataset - - - - - - - - - Coul + + + + + maximum number of iterations until error - - - - - - High-current correction for 2D and 3D effects + + save subcircuit nodes into dataset - - - - - Emitter minority charge weighting factor in HBTs + preferred convergence algorithm - - - - - - Collector minority charge weighting factor in HBTs + + + + method for solving the circuit matrix - - - - - - B-E depletion charge weighting factor in HBTs + + dc block - - - - - - B-C depletion charge weighting factor in HBTs + + dc Block - - - - - - Internal B-E saturation current + + dc feed - - - - - - Internal B-E current ideality factor + + dc Feed - - - - - - Internal B-E recombination saturation current + + D flip flop with set and reset verilog device - - - - - Internal B-E recombination current ideality factor + + + + cross coupled gate transfer function high scaling factor - - - - - Peripheral B-E saturation current + + + + cross coupled gate transfer function low scaling factor - - - - - - Peripheral B-E current ideality factor + + + + + cross coupled gate delay - - - - - - Peripheral B-E recombination saturation current + + D-FlipFlop w/ SR - - - - - - Peripheral B-E recombination current ideality factor + + diac (bidirectional trigger diode) - - - - - - Non-ideality factor for III-V HBTs + + + (bidirectional) breakover voltage - - - - Base current recombination time constant at B-C barrier for high forward injection + (bidirectional) breakover current - - - - - - Internal B-C saturation current + + + + parasitic capacitance - - - - - - Internal B-C current ideality factor + + + + + + emission coefficient - - - - - External B-C saturation current + + + intrinsic junction resistance - - - - - - External B-C current ideality factor + + Diac - - - - - - B-E tunneling saturation current + + + digital simulation - - - - - - Exponent factor for tunneling current + + type of simulation - - - - Specifies the base node connection for the tunneling current + duration of TimeList simulation - - - - - Avalanche current factor + netlist format - - - - - - Exponent factor for avalanche current + + + digital source - - - - - - Relative TC for FAVL + + + number of the port - - - - - - Relative TC for QAVL + + initial output value - - - - - - Zero bias internal base resistance + + list of times for changing output value - - - - - - Factor for geometry dependence of emitter current crowding + + diode - - - - - - Correction factor for modulation by B-E and B-C space charge layer + + + + zero-bias junction capacitance - - - - - Ratio of HF shunt to total internal capacitance (lateral NQS effect) + + + + + grading coefficient - - - - - Ration of internal to total minority charge + + + + junction potential - - - - - - Forward ideality factor of substrate transfer current + + linear capacitance - - - - - C-S diode saturation current + recombination current parameter - - - - - - Ideality factor of C-S diode current + + emission coefficient for Isr - - - - - Transit time for forward operation of substrate transistor + ohmic series resistance - - - - - - Substrate series resistance + + + + transit time - - - - - - Substrate shunt capacitance + + high-injection knee current (0=infinity) - - - - - - Internal B-E zero-bias depletion capacitance + + + + reverse breakdown voltage - - - - - - Internal B-E built-in potential + + + + current at reverse breakdown voltage - - - - - - Internal B-E grading coefficient + + Bv linear temperature coefficient - - - - - Ratio of maximum to zero-bias value of internal B-E capacitance + Rs linear temperature coefficient - - - - - Peripheral B-E zero-bias depletion capacitance - - - - - - - - - Peripheral B-E built-in potential + Tt linear temperature coefficient - - - - - - Peripheral B-E grading coefficient + + Tt quadratic temperature coefficient - - - - - Ratio of maximum to zero-bias value of peripheral B-E capacitance + M linear temperature coefficient - - - - - Internal B-C zero-bias depletion capacitance + M quadratic temperature coefficient - - - - - - Internal B-C built-in potential + + + default area for diode - - - - - - Internal B-C grading coefficient + + Diode - - - - - - Internal B-C punch-through voltage + + data voltage level shifter (digital to analogue) verilog device - - - - - External B-C zero-bias depletion capacitance + + voltage level - - - - - - External B-C built-in potential + + + time delay - - - - - - External B-C grading coefficient + + D2A Level Shifter - - - - - - External B-C punch-through voltage + + data voltage level shifter (analogue to digital) verilog device + + + + + + + + + + + + + + + + + + + - - - - Partitioning factor of parasitic B-C cap + + + V - - - - - Partitioning factor of parasitic B-E cap + + A2D Level Shifter - - - - - - C-S zero-bias depletion capacitance + + 2to4 demultiplexer verilog device - - - - - - C-S built-in potential + + 2to4 Demux - - - - - - C-S grading coefficient + + 3to8 demultiplexer verilog device - - - - - - C-S punch-through voltage + + 3to8 Demux - - - - - - Low current forward transit time at VBC=0V + + 4to16 demultiplexer verilog device - - - - - - Time constant for base and B-C space charge layer width modulation + + 4to16 Demux - - - - - Time constant for modelling carrier jam at low VCE + + externally controlled voltage source - - - - - - Neutral emitter storage time + + + voltage in Volts - - - - - - Exponent factor for current dependence of neutral emitter storage time + + Externally Controlled Voltage Source - - - - - - Saturation time constant at high current densities + + EPFL-EKV MOS 2.6 verilog device - - - - - - Smoothing factor for current dependence of base and collector transit time + + long = 1, short = 2 - - - - - Partitioning factor for base and collector portion + length parameter - - - - - - Internal collector resistance at low electric field + + + + + + + + + + m - - - - - - Voltage separating ohmic and saturation velocity regime + + Width parameter - - - - - Internal C-E saturation voltage + parallel multiple device number - - - - - - Collector punch-through voltage + + series multiple device number - - - - - - Storage time for inverse operation + + gate oxide capacitance per unit area - - - - - - Total parasitic B-E capacitance + + F/m**2 - - - - - - Total parasitic B-C capacitance + + metallurgical junction depth - - - - - Factor for additional delay time of minority charge + channel width correction - - - - - - Factor for additional delay time of transfer current + + channel length correction - - - - - Flag for turning on and off of vertical NQS effect + + long channel threshold voltage - - - - - - Flicker noise coefficient + + body effect parameter - - - - - - Flicker noise exponent factor + + V**(1/2) - - - - Flag for determining where to tag the flicker noise source + bulk Fermi potential - - - - - - Scaling factor for collector minority charge in direction of emitter width + + + + transconductance parameter - - - - - - Scaling factor for collector minority charge in direction of emitter length + + + A/V**2 - - - - - Bandgap voltage extrapolated to 0 K + mobility reduction coefficient + + - - - - - First order relative TC of parameter T0 - - - - - - - - Second order relative TC of parameter T0 - - - - - - - - - Temperature exponent for RCI0 + + 1/V - - - - - Relative TC of saturation drift velocity + mobility coefficient + - - - - - Relative TC of VCES + + V/m - - - - - - Temperature exponent of internal base resistance + + + longitudinal critical field - - - - - - Temperature exponent of external base resistance + + depletion length coefficient - - - - - Temperature exponent of external collector resistance + narrow-channel effect coefficient - - - - - - Temperature exponent of emitter resistance + + reverse short channel charge density - - - - - - Temperature exponent of mobility in substrate transistor transit time + + A*s/m**2 - - - - Effective emitter bandgap voltage + characteristic length - - - - Effective collector bandgap voltage + threshold voltage temperature coefficient - - - - - Effective substrate bandgap voltage + + V/K - - - - - Coefficient K1 in T-dependent band-gap equation + + mobility temperature coefficient - - - - Coefficient K2 in T-dependent band-gap equation + Longitudinal critical field temperature exponent - - - - - Exponent coefficient in B-E junction current temperature dependence + + Ibb temperature coefficient - - - - - - Relative TC of forward current gain for V2.1 model + + 1/K - - - - - Flag for turning on and off self-heating effect + + heavily doped diffusion length - - - - - J/W + + drain/source diffusion sheet resistance - - - - - Flag for compatibility with v2.1 model (0=v2.1) + + Ohm/square - - - - - Temperature at which parameters are specified + source contact resistance + + + + + + + + + - - - - - Temperature change w.r.t. chip temperature for particular transistor + + + Ohm - - HICUM L2 v2.22 + + drain contact resistance - - HICUM Level 0 v1.2 verilog device + + gate to source overlap capacitance - - - - reverse Early voltage (normalization volt.) + + + + + F/m - - - - flag for turning on base related critical current + + gate to drain overlap capacitance - - - - Smoothing factor for the d.c. injection width + + gate to bulk overlap capacitance - - - - BE charge built-in voltage for d.c. transfer current + + first impact ionization coefficient - - - - charge BE exponent factor for d.c. transfer current + + 1/m - - - BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current + second impact ionization coefficient - - - TC of iqf + + saturation voltage factor for impact ionization - - - - Exponent factor for temperature dependent thermal resistance + + area related theshold voltage mismatch parameter - - npn HICUM L0 v1.2 + + V*m - - pnp HICUM L0 v1.2 + + area related gain mismatch parameter - - HICUM Level 0 v1.2g verilog device + + area related body effect mismatch parameter - - high-injection roll-off current + + sqrt(V)*m - - TC of iqf (bandgap coefficient of zero bias hole charge) + + + + + + + + + + + A - - TC of avalanche prefactor, identical to alfav of Hicum/L2 + + + + + + + + F - - TC of avalanche exponential factor, identical to alqav of Hicum/L2 + + + diode relative area - - Emitter part coefficient of the zero bias hole charge temperature variation + + charge partition parameter - Collector part coefficient of the zero bias hole charge temperature variation + + + + + + + parameter measurement temperature - - Bandgap TC parameter of ver + + + + + + + + Celsius - - Bandgap TC parameter of vef + + EPFL-EKV NMOS 2.6 - - Specific recombination current at the BC barrier for high forward injection + + EPFL-EKV PMOS 2.6 - - npn HICUM L0 v1.2g + + equation defined device - - pnp HICUM L0 v1.2g + + type of equations - - HICUM Level 0 v1.3 verilog device + + number of branches - - Flag for using third order solution for transfer current + + + current equation - - bias dependence for reverse Early voltage + + + charge equation - - Flag for turning temperature dependence of tef0 on and off + + Equation Defined Device - - TC of Reverse Early voltage + + equation - - TC of AVER + + + + Equation - - Bandgap difference between base and BE-junction + + put result into dataset - - Frist-order TC of iqfh + + externally driven transient simulation - - Second-order TC of iqfh + + + integration method - - npn HICUM L0 v1.3 + + + order of integration method - - pnp HICUM L0 v1.3 + + + initial step size in seconds - - HICUM Level 2 v2.1 verilog device + + + minimum step size in seconds - - Partitioning factor of parasitic B-C capacitance + + + relative tolerance of local truncation error - - Noise factor for internal base resistance + + + absolute tolerance of local truncation error - - HICUM L2 v2.1 + + + overestimation of local truncation error - - HICUM Level 2 v2.23 verilog device + + + relax time step raster - - HICUM L2 v2.23 + + + perform an initial DC analysis - - HICUM Level 2 v2.24 verilog device + + + maximum step size in seconds - - HICUM L2 v2.24 + + External transient simulation - - hicumL2V2p31n verilog device + + 1bit full adder verilog device - - Weight factor for the low current minority charge + + 1Bit FullAdder - - Parameter describing the slope of hjEi(VBE) + + 2bit full adder verilog device - - Smoothing parameter for hjEi(VBE) at high voltage + + 2Bit FullAdder - - Time constant for modeling carrier jam at low VCE + + gated D latch verilog device - - Barrier voltage + + Gated D-Latch - - Normalization parameter + + 4bit Gray to binary converter verilog device - - Smoothing parameter for barrier voltage + + 4Bit Gray2Bin - - fitting factor for critical current + + ground (reference potential) - - Flag for turning on and off of correlated noise implementation + + Ground - - Emitter resistance flicker noise coefficient + + gyrator (impedance inverter) - - Emitter resistance flicker noise exponent factor + + gyrator ratio - - Bandgap difference between B and B-E junction used for hjEi0 and hf0 + + Gyrator - - Temperature coefficient for ahjEi + + 1bit half adder verilog device - - Temperature coefficient for hjEi0 + + 1Bit HalfAdder - - Temperature coefficient for Rth + + Harmonic balance simulation - - First order relative TC of parameter Rth + + number of harmonics - - HICUM L2 V2.31 + + Harmonic balance @@ -12079,7 +7786,7 @@ Wrong 'component' line format! - + ERROR: No file name in SPICE component "%1". @@ -12502,11 +8209,15 @@ Wrong 'component' line format! - voltage controlled voltage source + + + voltage controlled resistor + + resistance gain @@ -12541,7 +8252,7 @@ Wrong 'component' line format! - + ERROR: No file name in %1 component "%2". @@ -12704,7 +8415,7 @@ Wrong 'component' line format! - + invalid @@ -12813,7 +8524,7 @@ Wrong 'component' line format! - + Successfully exported @@ -12836,8 +8547,8 @@ Use PNG, JPEG or SVG graphics! - - + + verilog-a user devices @@ -12896,14 +8607,14 @@ Use PNG, JPEG or SVG graphics! - + diagrams - + paintings @@ -13021,16 +8732,16 @@ Set the Octave location on the application settings. - + - + untitled - + Format Error: 'Painting' field is not closed! @@ -13190,17 +8901,17 @@ Unknown field! - + WARNING: Skipping library component "%1". - - ERROR: Cannot load library component "%1". + + ERROR: "%1": Cannot load library component "%2" from "%3" - + WARNING: Ignore simulation component in subcircuit "%1". @@ -13210,7 +8921,7 @@ Unknown field! - + ERROR: Only one digital simulation allowed. @@ -13326,11 +9037,17 @@ a substrate with lower permittivity and larger height. Cannot save settings file ! + + + Quarter wave filters do not allow low-pass nor high-pass masks + + + QucsActiveFilter - + &File @@ -13340,7 +9057,29 @@ a substrate with lower permittivity and larger height. - + + &View + + + + + &Console + + + + + Enables/disables the filter calculation console + + + + + Console + +Enables/disables the filter calculation console + + + + &Help @@ -13360,30 +9099,30 @@ a substrate with lower permittivity and larger height. - - + + Passband attenuation, Ap (dB) - + Stopband attenuation, As (dB) - - Cuttof frequency, Fc (Hz) + + Cutoff frequency, Fc (Hz) - - + + Stopband frequency, Fs (Hz) - + Passband ripple Rp(dB) @@ -13393,7 +9132,7 @@ a substrate with lower permittivity and larger height. - + Filter order @@ -13443,27 +9182,61 @@ a substrate with lower permittivity and larger height. - - Calculation console + + Low Pass - - Filter topology + + General filter amplitude-frequency response - - Filter type: + + + + Unable to implement filter with such parameters and topology +Change parameters and/or topology and try again! + + + + + + Filter calculation was successful - LowPass + Filter calculation terminated with error! + + + + + Filter calculation terminated with error + + + + + Lower cutoff frequency, Fl (Hz) + + + + + Copyright (C) 2014, 2015 by + + + + + Filter topology + Filter type: + + + + High Pass @@ -13489,62 +9262,45 @@ a substrate with lower permittivity and larger height. - + Cauer section - - General amplitude frequency response - - - - - Filter topology preview (one stage) - - - - + Filter parameters - + Transfer function and Topology - - General filter amplidure-frequency response + + Filter topology preview - - Filter topology preview + + Filter calculation console - - Filter calculation console + + + Ready. - + Upper cutoff frequency of band-pass/band-stop filter is less than lower. Unable to implement such filter. Change parameters and try again. - - - - Unable to implement filter with such parameters and topology -Change parapeters and/or topology and try again! - - - - + Unable to use Cauer section for Chebyshev or Butterworth frequency response. Try to use another topology. @@ -13560,40 +9316,28 @@ frequency response. Try to use another topology. Function will be implemented in future version - - - -Filter calculation was sucessfull - - - - - -Filter calculation terminated with error - - Upper cutoff frequency, Fu (Hz) - - Lower cuttoff frequency, Fl (Hz) + + Transient bandwidth, TW (Hz) - - Transient bandwidth, TW (Hz) + + Error! - + Active filter design - + About... @@ -13605,12 +9349,7 @@ Active Filter synthesis program - - Copyright (C) 2014 by - - - - + About Qt @@ -13618,7 +9357,7 @@ Active Filter synthesis program QucsApp - + Schematic @@ -13634,42 +9373,42 @@ Active Filter synthesis program - + VHDL Sources - - + + Verilog Sources - - + + Verilog-A Sources - - + + Octave Scripts - + Spice Files - + Any File - + The schematic search path has been refreshed. @@ -13689,7 +9428,7 @@ Active Filter synthesis program - + New @@ -13774,13 +9513,13 @@ Active Filter synthesis program - + - + @@ -13803,7 +9542,7 @@ Active Filter synthesis program - + Cannot open "%1". @@ -13815,8 +9554,8 @@ Active Filter synthesis program - - + + @@ -13835,13 +9574,13 @@ Active Filter synthesis program - + Default icon not found: %1.png - + -port @@ -13852,13 +9591,13 @@ Active Filter synthesis program - + The document contains unsaved changes! - + Do you want to save the changes before copying? @@ -13869,13 +9608,13 @@ Active Filter synthesis program - + &Save - + Copy file @@ -13909,31 +9648,31 @@ Active Filter synthesis program - + Warning - + This will delete the file permanently! Continue ? - + No - + - + Yes - + unknown @@ -14025,7 +9764,20 @@ Active Filter synthesis program - + + + + + Search results + + + + + verilog-a user devices + + + + Cannot copy file to identical name: %1 @@ -14094,7 +9846,7 @@ Active Filter synthesis program - + @@ -14108,7 +9860,7 @@ Active Filter synthesis program - + Creating new text editor... @@ -14172,12 +9924,12 @@ Active Filter synthesis program - + Cancel - + Cannot overwrite an open document @@ -14192,7 +9944,7 @@ Active Filter synthesis program - + Closing file... @@ -16271,7 +12023,7 @@ Very simple text editor for Qucs QucsFilter - + &File @@ -16311,7 +12063,7 @@ Very simple text editor for Qucs - + Filter type: @@ -16347,29 +12099,29 @@ Very simple text editor for Qucs - + Corner frequency: - + Stop frequency: - + Stop band frequency: - - + + Pass band ripple: - + Stop band attenuation: @@ -16437,19 +12189,19 @@ Filter synthesis program - + Result: - + Error - + Stop frequency must be greater than start frequency. @@ -16604,17 +12356,22 @@ Enables/disables the table of contents - + Component Selection - - Search... + + Search Lib Components - + + Clear + + + + Component @@ -16629,13 +12386,19 @@ Enables/disables the table of contents - + About... Library Manager for Qucs + + + + + + Copyright (C) 2011-2015 Qucs Team @@ -16646,7 +12409,7 @@ Enables/disables the table of contents - + QucsLib Help @@ -16666,14 +12429,17 @@ Enables/disables the table of contents - - Search result + + + + + Search results - + - + @@ -16682,13 +12448,13 @@ Enables/disables the table of contents - + Cannot open "%1". - + @@ -16696,21 +12462,6 @@ Enables/disables the table of contents Library is corrupt. - - - Search Library Component - - - - - Result - - - - - No appropriate component found. - - QucsSettingsDialog @@ -17718,7 +13469,7 @@ Edits the symbol for this schematic - + Error @@ -17736,7 +13487,7 @@ Set the admsXml location on the application settings. - + ERROR: Cannot create library file "%s". @@ -17745,83 +13496,46 @@ Set the admsXml location on the application settings. SearchDialog - - - - Dialog - - - - Text to search for - - - - Text to replace with - - - - Ask before replacing - - - - Case sensitive - - - - Whole words only - - - - Search backwards - - - - Next - - - - - Close @@ -17835,29 +13549,6 @@ Set the admsXml location on the application settings. Search Text - - - The search result contains all components whose -name contains the search string. All libraries -are included in the search. - - - - - Search string: - - - - - Search - - - - - - Search result - - SettingsDialog @@ -18300,7 +13991,7 @@ are included in the search. SymbolWidget - + Symbol: @@ -18309,6 +14000,13 @@ are included in the search. ! Drag n'Drop me ! + + + Warning: Symbol '%1' missing in Qucs Library. +Drag and Drop may still work. +Please contact the developers. + + TextDoc diff --git a/qucs/translations/qucs_es.ts b/qucs/translations/qucs_es.ts index b07144c582..379f37c504 100644 --- a/qucs/translations/qucs_es.ts +++ b/qucs/translations/qucs_es.ts @@ -3528,62 +3528,6 @@ Resistor color code computation program - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - @@ -3739,10 +3683,6 @@ Resistor color code computation program - - - - polarity @@ -3947,10 +3887,6 @@ Resistor color code computation program - - - - @@ -4091,5709 +4027,1480 @@ Resistor color code computation program Doblez de Cable - - bsim3v34nMOS verilog device - + + + + + + + + + + + simulation temperature + simulación de temperatura + + + + capacitor + condensador + capacitance in Farad + capacidad en Faradios + + + initial voltage for transient simulation + tensión inicial para la simulación de transitorio + + + + + + + + schematic symbol + símbolo de esquema + + + + Capacitor + Condensador + + + + current controlled current source + fuente de intensidad controlada por intensidad + + + + + + forward transfer factor + factor de transferencia directa + + + + + + + + + + + + + + + delay time + tiempo de retardo + + + + Current Controlled Current Source + Fuene de Intensidad Controlada por Intensidad + + + + current controlled voltage source + fuente de tensión controlada por intensidad + + + + Current Controlled Voltage Source + Fuente de Tensión Controlada por Intensidad + + + + circulator + circulador + + + + reference impedance of port 1 + impedancia de referencia de la conexión 1 + + + reference impedance of port 2 + impedancia de referencia de la conexión 2 + + + reference impedance of port 3 + impedancia de referencia de la conexión 3 + + + + Circulator + Circulador + + + + coaxial transmission line + línea de transmisión coaxial + + + + + relative permittivity of dielectric + permitividad relativa del dieléctrico + + + + + specific resistance of conductor + resistencia específica del conductor + + + + + relative permeability of conductor + permeabilidad relativa del conductor + + + inner diameter of shield + diámetro interior de la pantalla + + + diameter of inner conductor + diámetro del conductor interior + + + + mechanical length of the line + longitud mecánica de la línea + + + + + + loss tangent + tangente de perdidas + + + + Coaxial Line + Línea coaxial + + + + 1bit comparator verilog device + + + + + 1Bit Comparator + + + + + 2bit comparator verilog device + + + + + 2Bit Comparator + + + + + 4bit comparator verilog device + + + + + 4Bit Comparator + + + + + number of input ports + número de puertos de entrada + + - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - simulation temperature - simulación de temperatura - - - - bsim3v34nMOS - - - - - bsim3v34pMOS verilog device - - - - - bsim3v34pMOS - - - - - bsim4v30nMOS verilog device - - - - - bsim4v30nMOS - - - - - bsim4v30pMOS verilog device - - - - - bsim4v30pMOS - - - - - capacitor - condensador - - - - capacitance in Farad - capacidad en Faradios - - - - initial voltage for transient simulation - tensión inicial para la simulación de transitorio - - - - - - - - - schematic symbol - símbolo de esquema - - - - Capacitor - Condensador - - - - current controlled current source - fuente de intensidad controlada por intensidad - - - - - - forward transfer factor - factor de transferencia directa - - - - - - - - - - - - - - - delay time - tiempo de retardo - - - - Current Controlled Current Source - Fuene de Intensidad Controlada por Intensidad - - - - current controlled voltage source - fuente de tensión controlada por intensidad - - - - Current Controlled Voltage Source - Fuente de Tensión Controlada por Intensidad - - - - circulator - circulador - - - - reference impedance of port 1 - impedancia de referencia de la conexión 1 - - - - reference impedance of port 2 - impedancia de referencia de la conexión 2 - - - - reference impedance of port 3 - impedancia de referencia de la conexión 3 - - - - Circulator - Circulador - - - - coaxial transmission line - línea de transmisión coaxial - - - - - relative permittivity of dielectric - permitividad relativa del dieléctrico - - - - - - specific resistance of conductor - resistencia específica del conductor - - - - - - relative permeability of conductor - permeabilidad relativa del conductor - - - - inner diameter of shield - diámetro interior de la pantalla - - - - diameter of inner conductor - diámetro del conductor interior - - - - - mechanical length of the line - longitud mecánica de la línea - - - - - - - loss tangent - tangente de perdidas - - - - Coaxial Line - Línea coaxial - - - - 1bit comparator verilog device - - - - - 1Bit Comparator - - - - - 2bit comparator verilog device - - - - - 2Bit Comparator - - - - - 4bit comparator verilog device - - - - - 4Bit Comparator - - - - - number of input ports - número de puertos de entrada - - - - - - - voltage of high level - tensión de alto nivel - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Error - Error - - - - Format Error: -Wrong line start! - Error de Formato: -¡Comienzo de línea equivocado! - - - - Format Error: -Unknown component! -%1 - -Do you make use of loadable components? - - - - - Format Error: -Wrong 'component' line format! - Error de Formato: -¡Formato de línea 'component' equivocado! - - - - coplanar line - línea coplanar - - - - - - - - - - - - - - name of substrate definition - nombre de la definición del sustrato - - - - - - - - - - - width of the line - ancho de la línea - - - - - - - width of a gap - ancho del gap - - - - - - - length of the line - longitud de la línea - - - - - - - material at the backside of the substrate - material de la parte trasera del sustrato - - - - use approximation instead of precise equation - usa aproximación en lugar de ecuación exacta - - - - Coplanar Line - Línea Coplanar - - - - ideal coupler - acoplador ideal - - - - coupling factor - factor de acoplamiento - - - - phase shift of coupling path in degree - desplazamiento de fase en grados - - - - Coupler - Acoplador - - - - coplanar gap - gap coplanar - - - - width of gap between the two lines - ancho del gap entre las dos líneas - - - - Coplanar Gap - Gap Coplanar - - - - coplanar open - coplanar abierto - - - - width of gap at end of line - ancho del gap al final de la línea - - - - Coplanar Open - Coplanar Abierto - - - - coplanar short - coplanar corto - - - - Coplanar Short - Coplanar Corto - - - - coplanar step - paso coplanar - - - - - - width of line 1 - ancho de la línea 1 - - - - - - width of line 2 - ancho de la línea 2 - - - - distance between ground planes - distancia entre planos de tierra - - - - Coplanar Step - Paso Coplanar - - - - coupled transmission lines - - - - - characteristic impedance of even mode - - - - - characteristic impedance of odd mode - - - - - - - - electrical length of the line - longitud eléctrica de la línea - - - - relative dielectric constant of even mode - - - - - relative dielectric constant of odd mode - - - - - attenuation factor per length of even mode - - - - - attenuation factor per length of odd mode - - - - - Coupled Transmission Line - - - - - D flip flop with asynchron reset - Biestable D con reset asíncrono - - - - D-FlipFlop - Biestable-D - - - - - dc simulation - simulación dc - - - - - - - relative tolerance for convergence - tolerancia relativa para converger - - - - - - - absolute tolerance for currents - tolerancia absoluta para las intensidades - - - - - - - absolute tolerance for voltages - tolerancia absoluta para las tensiones - - - - put operating points into dataset - poner los puntos de operación en el conjunto de datos - - - - - - - maximum number of iterations until error - numero máximo de las iteraciones antes de un error - - - - save subcircuit nodes into dataset - grabar los nodos del subcircuito en el conjunto de datos - - - - preferred convergence algorithm - algoritmo de convergencia preferido - - - - - - method for solving the circuit matrix - método para resolver la matriz del circuito - - - - dc block - bloque dc - - - - dc Block - Bloque dc - - - - dc feed - alimentación dc - - - - dc Feed - Alimentación dc - - - - D flip flop with set and reset verilog device - - - - - - - - cross coupled gate transfer function high scaling factor - - - - - - - - cross coupled gate transfer function low scaling factor - - - - - - - - cross coupled gate delay - - - - - D-FlipFlop w/ SR - - - - - diac (bidirectional trigger diode) - diac (diodo disparador bidireccional) - - - - - (bidirectional) breakover voltage - (bidireccional) tensión directa de disparo - - - - (bidirectional) breakover current - (bidireccional) corriente directa de disparo - - - - - - parasitic capacitance - capacidad parásita - - - - - - - - emission coefficient - coeficiente de emisión - - - - - - intrinsic junction resistance - resistencia intrínseca de la unión - - - - Diac - Diac - - - - - digital simulation - simulación digital - - - - type of simulation - tipo de simulación - - - - duration of TimeList simulation - duración de la simulación de la Lista de Tiempos - - - - netlist format - formato de la lista de componentes - - - - - digital source - fuente digital - - - - - number of the port - número de la conexión - - - - initial output value - valor inicial de salida - - - - list of times for changing output value - lista de veces que se cambia el valor de salida - - - - diode - diodo - - - - - - zero-bias junction capacitance - capacidad de polarización de la unión - - - - - - - - grading coefficient - coeficiente de graduación - - - - - - - junction potential - potencial de la unión - - - - linear capacitance - capacidad lineal - - - - recombination current parameter - parámetro de recombinación de la corriente - - - - emission coefficient for Isr - coeficiente de emisión para lsr - - - - ohmic series resistance - resistencia serie en óhmios - - - - - - transit time - tiempo de tránsito - - - - high-injection knee current (0=infinity) - high-injection knee current (0=infinito) - - - - - - reverse breakdown voltage - tensión de ruptura inversa - - - - - - current at reverse breakdown voltage - corriente en la tensión de ruptura inversa - - - - Bv linear temperature coefficient - coeficiente de temperatura lineal Bv - - - - Rs linear temperature coefficient - coeficiente de temperatura lineal Rs - - - - Tt linear temperature coefficient - coeficiente de temperatura lineal Tt - - - - Tt quadratic temperature coefficient - coeficiente de temperatura cuadrático Tt - - - - M linear temperature coefficient - coeficiente de temperatura lineal M - - - - M quadratic temperature coefficient - coeficiente de temperatura cuadrático M - - - - - default area for diode - area predeterminada para el diodo - - - - Diode - Diodo - - - - data voltage level shifter (digital to analogue) verilog device - - - - - - voltage level - - - - - - time delay - - - - - D2A Level Shifter - - - - - data voltage level shifter (analogue to digital) verilog device - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - V - V - - - - A2D Level Shifter - - - - - 2to4 demultiplexer verilog device - - - - - 2to4 Demux - - - - - 3to8 demultiplexer verilog device - - - - - 3to8 Demux - - - - - 4to16 demultiplexer verilog device - - - - - 4to16 Demux - - - - - externally controlled voltage source - - - - - - voltage in Volts - tensión en Voltios - - - - Externally Controlled Voltage Source - - - - - EPFL-EKV MOS 2.6 verilog device - - - - - long = 1, short = 2 - - - - - length parameter - - - - - - - - - - - - - m - - - - - Width parameter - - - - - parallel multiple device number - - - - - series multiple device number - - - - - gate oxide capacitance per unit area - - - - - F/m**2 - - - - - metallurgical junction depth - - - - - channel width correction - - - - - channel length correction - - - - - long channel threshold voltage - - - - - body effect parameter - - - - - V**(1/2) - - - - - bulk Fermi potential - - - - - - - transconductance parameter - parámetro de transconductancia - - - - - A/V**2 - - - - - mobility reduction coefficient - - - - - - - - - - - - - 1/V - 1/V - - - - mobility coefficient - - - - - - - V/m - - - - - - longitudinal critical field - - - - - depletion length coefficient - - - - - narrow-channel effect coefficient - - - - - reverse short channel charge density - - - - - A*s/m**2 - - - - - characteristic length - - - - - threshold voltage temperature coefficient - - - - - - - - - - - - - V/K - V/K - - - - mobility temperature coefficient - - - - - Longitudinal critical field temperature exponent - - - - - Ibb temperature coefficient - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1/K - 1/K - - - - heavily doped diffusion length - - - - - drain/source diffusion sheet resistance - - - - - Ohm/square - - - - - source contact resistance - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Ohm - Ohm - - - - drain contact resistance - - - - - gate to source overlap capacitance - - - - - - - - F/m - - - - - gate to drain overlap capacitance - - - - - gate to bulk overlap capacitance - - - - - first impact ionization coefficient - - - - - 1/m - - - - - second impact ionization coefficient - - - - - saturation voltage factor for impact ionization - - - - - area related theshold voltage mismatch parameter - - - - - V*m - - - - - area related gain mismatch parameter - - - - - area related body effect mismatch parameter - - - - - sqrt(V)*m - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A - A - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - F - F - - - - - diode relative area - - - - - charge partition parameter - - - - - - - - - - - parameter measurement temperature - temperatura de medida del parámetro - - - - - - - - - - Celsius - Celsius - - - - EPFL-EKV NMOS 2.6 - - - - - EPFL-EKV PMOS 2.6 - - - - - equation defined device - dispositivo de ecuación definida - - - - type of equations - tipos de ecuaciones - - - - number of branches - número de ramas - - - - - current equation - equación de corriente - - - - - charge equation - ecuación de carga - - - - Equation Defined Device - Dispositivo de Ecuación Definida - - - - equation - ecuación - - - - - - Equation - Ecuación - - - - put result into dataset - poner los resultados en el conjunto de datos - - - - externally driven transient simulation - - - - - - integration method - método de integración - - - - - order of integration method - orden del método de integración - - - - - initial step size in seconds - tamaño del paso inicial en segundos - - - - - minimum step size in seconds - tamaño del paso mínimo en segundos - - - - - relative tolerance of local truncation error - tolerancia relativa del error de redondeo local - - - - - absolute tolerance of local truncation error - tolerancia absoluta del error de redondeo local - - - - - overestimation of local truncation error - sobrestimación del error de redondeo local - - - - - relax time step raster - - - - - - perform an initial DC analysis - realizar un análisis DC inicial - - - - - maximum step size in seconds - tamaño máximo del paso en segundos - - - - External transient simulation - - - - - 1bit full adder verilog device - - - - - 1Bit FullAdder - - - - - 2bit full adder verilog device - - - - - 2Bit FullAdder - - - - - gated D latch verilog device - - - - - Gated D-Latch - - - - - 4bit Gray to binary converter verilog device - - - - - 4Bit Gray2Bin - - - - - ground (reference potential) - tierra (potencial de referencia) - - - - Ground - Tierra - - - - gyrator (impedance inverter) - girador (inversor de impendancia) - - - - gyrator ratio - porcentaje de girador - - - - Gyrator - Girador - - - - 1bit half adder verilog device - - - - - 1Bit HalfAdder - - - - - Harmonic balance simulation - Simulación de equilibrio armónico - - - - number of harmonics - número de armónicos - - - - Harmonic balance - Equilibrio armónico - - - - HBT model by Ferdinand-Braun-Institut (FBH), Berlin - Modelo HBT por Ferdinand-Braun-Institut (FBH), Berlin - - - - - - - Ignored - Ignorado - - - - Device operating temperature, Celsius - Temperatura de operación del dispositivo, Celsius - - - - Thermal resistance, K/W - Resistencia térmica, K/W - - - - - - - - - - - - - Thermal capacitance - Capacidad térmica - - - - Scaling factor, number of emitter fingers - Factor de escala, número de dedos emisores - - - - Length of emitter finger, m - Longitud del dedo emisor, m - - - - Width of emitter finger, m - Anchura del dedo emisor, m - - - - Forward saturation current density, A/um^2 - Densidad de corriente saturada directa, A/um^2 - - - - Forward current emission coefficient - Coeficiente de emisión de corriente directa - - - - Forward thermal activation energy, V, (0 == disables temperature dependence) - Energía de activación térmica directa, V, (0==deshabilita la dependencia de la temperatura) - - - - B-E leakage saturation current density, A/um^2 - Densidad de corriente saturada de fuga B-E, A/um^2 - - - - B-E leakage emission coefficient - Coeficiente de emisión de fuga B-E - - - - Limiting resistor of B-E leakage diode, Ohm - Resistencia limitadora del diodo de fuga B-E, Ohm - - - - B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - energía de activación térmica de fuga B-E, V, (0 == deshabilita la dependencia de la temperatura) - - - - 2nd B-E leakage saturation current density, A/um^2 - 2ª densidad de corriente de saturació de fuga, A/um^2 - - - - 2nd B-E leakage emission coefficient - 2º coeficiente de emisión de fuga B-E - - - - 2nd Limiting resistor of B-E leakage diode, Ohm - 2ª resistencia limitadora del diodo de fuga B-E, Ohm - - - - 2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - 2ª energía de activación térmica de fuga B-E, V, (0 == deshabilita la dependencia de la temperatura) - - - - Reverse saturation current density, A/um^2 - Densidad de corriente saturada inversa, A/um^2 - - - - Reverse current emission coefficient - Coeficiente de emisión de corriente inversa - - - - Reverse thermal activation energy, V, (0 == disables temperature dependence) - Energía de activación térmica inversa, V, (0==deshabilita la dependencia de la temperatura) - - - - Fraction of Cjc that goes to internal base node - Fracción de Cjc que va al conector interno de la base - - - - B-C leakage saturation current density, A/um^2 (0. switches off diode) - Densidad de corriente saturada de fuga B-C, A/um^2 (0 desconecta el diodo) - - - - B-C leakage emission coefficient (0. switches off diode) - Coeficiente de corriente fuga B-C, A/um^2 (0 desconecta el diodo) - - - - Limiting resistor of B-C leakage diode, Ohm - Resistencia limitadora del diodo de fuga B-C, Ohm - - - - B-C leakage thermal activation energy, V, (0 == disables temperature dependence) - Energía de activación térmica de fuga B-C, V, (0 == deshabilita la dependencia de la temperatura) - - - - Ideal forward beta - Beta directa ideal - - - - Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence) - Coeficiente de temperatura de la ganancia de corriente directa, -1/K (0 == deshabilita la depedencia de la temperatura) - - - - Ideal reverse beta - Beta inversa ideal - - - - Forward Early voltage, V, (0 == disables Early Effect) - Tensión Early Directa, V. (0 == deshabilita el Efecto Early) - - - - Reverse Early voltage, V, (0 == disables Early Effect) - Tensión temprana inversa, V (0 == deshabilita el efecto temprano) - - - - Forward high-injection knee current, A, (0 == disables Webster Effect) - Forward high-injection knee current, A, (0 == deshabilita el efecto Webster) - - - - Reverse high-injection knee current, A, (0 == disables Webster Effect) - Reverse high-injection knee current, A, (0 == deshabilita el efecto Webster) - - - - C-E breakdown exponent, (0 == disables collector break-down) - Exponente de ruptura C-E, (0 == deshabilita la ruptura del colector) - - - - C-E breakdown voltage, V, (0 == disables collector break-down) - Tensión de ruptura C-E, (0 == deshabilita la ruptura del colector) - - - - C-E breakdown factor, (0 == disables collector break-down) - Factor de ruptura C-E, (0 == deshabilita la ruptura del colector) - - - - B-E breakdown voltage, V, (0 == disables emitter break-down) - Tensión de ruptura B-E, (0 == deshabilita la ruptura del emisor) - - - - Ideal reverse transit time, s - Tiempo de transitorio inverso ideal, s - - - - Extrinsic BC diffusion capacitance, F - Capacidad de difusión BC extrínseca, F - - - - Ideal forward transit time, s - Tietiempo ideal de tránsito en directa, s - - - - Temperature coefficient of forward transit time - Coeficiente de temperatura del tiempo transitorio en directa - - - - Excess transit time coefficient at base push-out - Coeficiente del tiempo de transición en exceso en la salida de la base - - - - Smoothing parameter for Thcs - Parámetro de suavizado para Thcs - - - - B-E zero-bias depletion capacitance, F/um^2 - Capacidad de reducción de polarización cero en B-E, F/um^2 - - - - B-E junction exponential factor - Factor exponencial de la unión B-E - - - - B-E junction built-in potential, V - Potencial interno de la unión B-E, V - - - - B-C zero-bias depletion capacitance, F/um^2 - Capacidad de reducción de polarización cero en B-C, F/um^2 - - - - B-C junction exponential factor - factor exponencial unión B-C - - - - B-C junction built-in potential, V - Potencial interno de la unión B-C, V - - - - not used - no usado - - - - Minimum B-C depletion capacitance (Vbc dependence), F/um^2 - Capacidad de reducción B-C mínima (dependiente de Vbc), F/um^2 - - - - Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction) - Corriente de colector cuando Cbc alcanza Cmin, A/um^2 (0 == deshabilita la reducción Cbc) - - - - Fraction of Cmin, lower limit of BC capacitance (Ic dependence) - Fracción de Cmin, límite inferior de la capacidad BC (dependiente de lc) - - - - Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out) - Llegada de la salida de base a tensiones bajas, Ohm*um^2 (0 == deshabilita la salida de base) - - - - Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out) - Llegada de la salida de base a tensiones altas, Ohm*um^2 (0 == deshabilita la salida de base) - - - - Slope of Jk at high currents , Ohm*um^2 - Pendiente de JK en corrientes grandes , Ohm*um^2 - - - - Voltage shift of base push-out onset, V - Desplazamiento de tensión al llegar la salida de base, V - - - - Collector resistance, Ohm/finger - Resistencia del colector, Ohm/finger - - - - Emitter resistance, Ohm/finger - Resistencia del emisor, Ohm/finger - - - - Extrinsic base resistance, Ohm/finger - Resistencia de la base extrínseca, Ohm/finger - - - - Inner Base ohmic resistance, Ohm/finger - Resistencia óhmica de la base interna, Ohm/finger - - - - Collector inductance, H - Inductancia del colector, H - - - - Emitter inductance, H - Inductancia del emisor, H - - - - Base inductance, H - Inductancia de la base, H - - - - Extrinsic B-C capacitance, F - Capacidad de B-C extrínseca, F - - - - Extrinsic base capacitance, F - Capacidad de la base extrínseca, F - - - - Extrinsic collector capacitance, F - Capacidad del colector extrínseca, F - - - - - Flicker-noise coefficient - coeficiente de ruido de parpadeo - - - - - Flicker-noise exponent - exponente de ruido de parpadeo - - - - - Flicker-noise frequency exponent - exponente de la frecuencia del ruido de parpadeo - - - - Burst noise coefficient - Coeficiente de ruido de ráfaga - - - - Burst noise exponent - Exponente del ruido de ráfaga - - - - Burst noise corner frequency, Hz - Frecuencia de esquina del ruido de ráfaga, Hz + + + + voltage of high level + tensión de alto nivel + + - Ambient temperature at which the parameters were determined - Temperatura ambiente en la que se determinan los parámetros - - - - FBH HBT - FBH HBT - - - - HICUM Level 0 v1.12 verilog device - Componente verilog HICUM Level 0 v1.12 - - + + + + + + + + + + + - - - - (Modified) saturation current - (Modificada) corriente de saturación - - - - - - - Non-ideality coefficient of forward collector current - Coeficiente no ideal de la corriente directa de colector - - - - - - - Non-ideality coefficient of reverse collector current - Coeficiente no ideal de la corriente inversa de colector - - - - - - - - - - - - - - - forward Early voltage (normalization volt.) - Tensión inicial directa (normalización volt.) - - - - - - - forward d.c. high-injection roll-off current - - - - - - - - inverse d.c. high-injection roll-off current - corriente toll-off inversa en cc de alta inyección - - - - - - - high-injection correction current - corriente de corrección de alta inyección - - - - - - high-injection correction factor - factor de corrección de alta inyección - - - - - - - BE saturation current - corriente de saturación BE - - - - - - - BE non-ideality factor - factor no ideal BE - - - - - - - BE recombination saturation current - corriente de saturación de recombinación BE - - - - - - - BE recombination non-ideality factor - factor no ideal de recombinación BE - - - - - - - BC saturation current - corriente de saturación BC - - - - - - - BC non-ideality factor - factor no ideal BC - - - - - - - Zero-bias BE depletion capacitance - capacidad de deplexión BE de polarización cero - - - - - - - BE built-in voltage - tensión adicional BE - - - - - - - BE exponent factor - factor exponencial BE - - - - - - - Ratio of maximum to zero-bias value - Razón de máximo a valor de polarización cero + + + + + + + + + + + + + + + + + + Error + Error - - - - - low current transit time at Vbici=0 - tiempo de baja corriente transitoria a Vbici=0 + + Format Error: +Wrong line start! + Error de Formato: +¡Comienzo de línea equivocado! - - - - - Base width modulation contribution - Contrubución del ancho de modulación de la basa + + Format Error: +Unknown component! +%1 + +Do you make use of loadable components? + - - - - - SCR width modulation contribution - SCR modulación de ancho de contribución + + Format Error: +Wrong 'component' line format! + Error de Formato: +¡Formato de línea 'component' equivocado! - - - - - Storage time in neutral emitter - Tiempo de almacenamiento en punto neutro de emisor + + coplanar line + línea coplanar - - - - - Exponent factor for emitter transit time - + + + + + + + + + + + + name of substrate definition + nombre de la definición del sustrato - - - - Saturation time at high current densities - Tiempo de saturación a altas densidades de corriente - - - - - - - Smoothing factor for current dependence - + + + + + + + + width of the line + ancho de la línea - - - - Storage time at inverse operation - Tiempo de almacenamiento en inversa + + + + width of a gap + ancho del gap - - - - - Low-field collector resistance under emitter - Resistencia de colector en pequeño campo bajo emisor + + + + + length of the line + longitud de la línea - - - - - Voltage dividing ohmic and satur.region - Zona de división de tensión y saturación + + + + + material at the backside of the substrate + material de la parte trasera del sustrato - - - - - - - - Punch-through voltage - Tensión de perforación - - - - - - - Saturation voltage - Tensión de saturación + use approximation instead of precise equation + usa aproximación en lugar de ecuación exacta - - - - - Total zero-bias BC depletion capacitance - Capacidad total de reducción de polarización cero + + Coplanar Line + Línea Coplanar - - - - - BC built-in voltage - tensión adicional BC + + ideal coupler + acoplador ideal - - - - - BC exponent factor - factor exponencial BC + + coupling factor + factor de acoplamiento - - - - Punch-through voltage of BC junction - Tensión de perforación de la unión BC - - - - - - - Zero-bias external BC depletion capacitance - Capacidad de reducción externa de la unión BC de polarización cero - - - - - - - External BC built-in voltage - Tensión externa adicional BC + phase shift of coupling path in degree + desplazamiento de fase en grados - - - - - External BC exponent factor - Factor exponencial externo de la unión BC + + Coupler + Acoplador - - - - - Split factor = Cjci0/Cjc0 - Factor de separación = Cjci0/Cjc0 + + coplanar gap + gap coplanar - - - - - Internal base resistance at zero-bias - Resistencia de base interna en polarización cero + + width of gap between the two lines + ancho del gap entre las dos líneas - - - - - Geometry factor - Factor de geometría + + Coplanar Gap + Gap Coplanar - - - - - - - - - - External base series resistance - Resistencia serie de base externa + + coplanar open + coplanar abierto - - - - - - - - - - Emitter series resistance - Resistencia serie del emisor + + width of gap at end of line + ancho del gap al final de la línea - - - - - - - - - - External collector series resistance - Resistencia serie del colector externo + + Coplanar Open + Coplanar Abierto - - - - - - - - - - Substrate transistor transfer saturation current - Corriente de saturación de la transferenica sustrato transistor + + coplanar short + coplanar corto - - - - - Substrate transistor transfer current non-ideality factor - Factor no ideal de transferencia del sustrato de transistor + + Coplanar Short + Coplanar Corto - - - - - SC saturation current - Corriente de saturación SC + + coplanar step + paso coplanar - - - - - SC non-ideality factor - Factor no ideal SC + + + + width of line 1 + ancho de la línea 1 - - - - Zero-bias SC depletion capacitance - Capacidad de deplexión SC de polarización cero - - - - - - - SC built-in voltage - tensión adicional SC - - - - - - - External SC exponent factor - Factor exponencial externo de la unión SC + + + width of line 2 + ancho de la línea 2 - - - - SC punch-through voltage - Tensión de ruptura SC + distance between ground planes + distancia entre planos de tierra - - - - - Collector-base isolation (overlap) capacitance - Capacidad de aislamiento colector-base (solapamiento) + + Coplanar Step + Paso Coplanar - - - - - Emitter-base oxide capacitance - Capacidad del óxido emisor-base + + coupled transmission lines + - - - - - Exponent factor - Factor exponencial + + characteristic impedance of even mode + - - - - Prefactor - Prefactor - - - - - - - M^(1-AF) - M^(1-AF) + characteristic impedance of odd mode + - - - - flicker noise exponent factor - factor exponencial de ruido de centelleo + + + + electrical length of the line + longitud eléctrica de la línea - - - - Bandgap-voltage - Salto de tensión entre bandas - - - - - - - Effective emitter bandgap-voltage - Tensión efectiva de salto de banda de emisor - - - - - - - Effective collector bandgap-voltage - Tensión efectiva de salto de banda de colector - - - - - - - Effective substrate bandgap-voltage - Tensión efectiva de salto de banda de sustrato - - - - - - - Coefficient K1 in T-dependent bandgap equation - Coeficiente K1 en la ecución de salto de banda en función de T - - - - - - - Coefficient K2 in T-dependent bandgap equation - Coeficiente K2 en la ecución de salto de banda en función de T - - - - - - - Frist-order TC of tf0 - Primera orden TC de tf0 - - - - - - - Second-order TC of tf0 - Segunda orden TC de tf0 + relative dielectric constant of even mode + - - - - - - 1/K^2 - 1/K^2 + + relative dielectric constant of odd mode + - - - - - - - - Exponent coefficient in transfer current temperature dependence - Coeficiente exponencial de transferencia de corriente en función de la temperatura + attenuation factor per length of even mode + - - - - Exponent coefficient in BE junction current temperature dependence - Coeficiente exponencial en función de la temperatura en la corriente de la unión BE + attenuation factor per length of odd mode + - - - - - TC of epi-collector diffusivity - TC de difusividad epi-colector + + Coupled Transmission Line + - - - - - Relative TC of satur.drift velocity - TC relativo de la deriva de la velocidad de saturación + + D flip flop with asynchron reset + Biestable D con reset asíncrono - - - - - Relative TC of vces - TC relativo de vces + + D-FlipFlop + Biestable-D - - - - - TC of internal base resistance - TC de la resistencia interna de base + + + dc simulation + simulación dc - - - - - TC of external base resistance - TC de la resistencia externa de base + + + + + relative tolerance for convergence + tolerancia relativa para converger - - - - TC of external collector resistance - TC de la resistencia externa de colector + + + + absolute tolerance for currents + tolerancia absoluta para las intensidades - - - - TC of emitter resistances - TC de resistencias de emisor + + + + absolute tolerance for voltages + tolerancia absoluta para las tensiones - - - TC of avalanche prefactor - TC de prefactor de avalancha - - - - - - TC of avalanche exponential factor - TC del factor exponencial de avalancha + put operating points into dataset + poner los puntos de operación en el conjunto de datos - - - - Flag for self-heating calculation - Marcador para el cálculo del autocalentamiento + + + + maximum number of iterations until error + numero máximo de las iteraciones antes de un error - - - - - - - - - Thermal resistance - Resistencia térmica - - - - - - - - - - - K/W - K/W + save subcircuit nodes into dataset + grabar los nodos del subcircuito en el conjunto de datos - - - - Ws/K - Ws/K - - - - - - - Temperature for which parameters are valid - Temperatura a la que los parámetros son válidos + preferred convergence algorithm + algoritmo de convergencia preferido - - - - - - - - - C - C + + + + method for solving the circuit matrix + método para resolver la matriz del circuito - - - - - Temperature change for particular transistor - Temperatura de cambio para transistor específico + + dc block + bloque dc - - - - - - - - - K - K + + dc Block + Bloque dc - - npn HICUM L0 v1.12 - npn HICUM L0 v1.12 + + dc feed + alimentación dc - - pnp HICUM L0 v1.12 - pnp HICUM L0 v1.12 + + dc Feed + Alimentación dc - - HICUM Level 2 v2.22 verilog device - Dispositivo Verilog HICUM Level 2 v2.22 + + D flip flop with set and reset verilog device + - - - - - GICCR constant - Constante GICCR + + + + cross coupled gate transfer function high scaling factor + - - - - - A^2s - A^2s + + + + + cross coupled gate transfer function low scaling factor + - - - - - Zero-bias hole charge - Carga del hueco de polarización Cero + + + + cross coupled gate delay + - - - - - - - - - Coul - C + + D-FlipFlop w/ SR + - - - - - - High-current correction for 2D and 3D effects - Corrección de alta corriente para efectos 2D y 3D + + diac (bidirectional trigger diode) + diac (diodo disparador bidireccional) - - - - - - Emitter minority charge weighting factor in HBTs - Factor de ponderación de carga del emisor minoritario en HTBs + + + (bidirectional) breakover voltage + (bidireccional) tensión directa de disparo - - - - - Collector minority charge weighting factor in HBTs - Factor de ponderación de carga del colector minoritario en HBTs + (bidirectional) breakover current + (bidireccional) corriente directa de disparo - - - - - B-E depletion charge weighting factor in HBTs - Factor de ponderación de carga de la unión B-E en HBTs + + + parasitic capacitance + capacidad parásita - - - - - - B-C depletion charge weighting factor in HBTs - Factor de ponderación de carga de la unión B-C en HBTs + + + + + + emission coefficient + coeficiente de emisión - - - - - Internal B-E saturation current - Corriente interna de saturación B-E + + + intrinsic junction resistance + resistencia intrínseca de la unión - - - - - - Internal B-E current ideality factor - Factor ideal de corriente interna B-E + + Diac + Diac - - - - - - Internal B-E recombination saturation current - Corriente de saturación de recombinación interna B-E + + + digital simulation + simulación digital - - - - - - Internal B-E recombination current ideality factor - Factor ideal de corriente de recombinación interna B-E + + type of simulation + tipo de simulación - - - - - Peripheral B-E saturation current - Corriente de saturación periférica B-E + duration of TimeList simulation + duración de la simulación de la Lista de Tiempos - - - - - - Peripheral B-E current ideality factor - Factor ideal de corriente periférica B-E + + netlist format + formato de la lista de componentes - - - - - - Peripheral B-E recombination saturation current - Corriente de saturación de recombinación periférica B-E + + + digital source + fuente digital - - - - - - Peripheral B-E recombination current ideality factor - Factor ideal de corriente de recombinación periférica B-E + + + number of the port + número de la conexión - - - - - Non-ideality factor for III-V HBTs - Factor no ideal para III-V HBTs + initial output value + valor inicial de salida - - - - Base current recombination time constant at B-C barrier for high forward injection - Constante de tiempo de recombinación de la corriente de base en la unión B-C para polarización directa + list of times for changing output value + lista de veces que se cambia el valor de salida - - - - - - Internal B-C saturation current - Corriente de saturación interna B-C + + diode + diodo - - - - - - Internal B-C current ideality factor - Factor ideal de corriente interna B-C + + + + zero-bias junction capacitance + capacidad de polarización de la unión - - - - - External B-C saturation current - Corriente de saturación externa B-C - - - - - - - - External B-C current ideality factor - Factor ideal de corriente externa B-C + + + + + grading coefficient + coeficiente de graduación - - - - - B-E tunneling saturation current - Corriente de saturación de túnel B-E + + + + junction potential + potencial de la unión - - - - - - Exponent factor for tunneling current - Factor exponencial para la corriente de túnel + + linear capacitance + capacidad lineal - - - - Specifies the base node connection for the tunneling current - Especifica el nodo de conexión de base para la corriente de efecto túnel + recombination current parameter + parámetro de recombinación de la corriente - - - - - Avalanche current factor - Factor de corriente de avalancha - - - - - - - - Exponent factor for avalanche current - Factor exponencial para la corriente de avalancha + emission coefficient for Isr + coeficiente de emisión para lsr - - - - - - Relative TC for FAVL - TC relativa para FAVL + + ohmic series resistance + resistencia serie en óhmios - - - - - - Relative TC for QAVL - TC relativa para QAVL + + + + transit time + tiempo de tránsito - - - - - - Zero bias internal base resistance - Resistencia de base interna de polarización Cero + + high-injection knee current (0=infinity) + high-injection knee current (0=infinito) - - - - - - Factor for geometry dependence of emitter current crowding - Factor para la dependencia geométrica de la corriente de avalancha del emisor + + + + reverse breakdown voltage + tensión de ruptura inversa - - - - - Correction factor for modulation by B-E and B-C space charge layer - Factor de corrección de la modulación por B-E y B-C de la capa de carga espacial + + + current at reverse breakdown voltage + corriente en la tensión de ruptura inversa - - - - - - Ratio of HF shunt to total internal capacitance (lateral NQS effect) - Porcentaje de desviación HF a la capacidad interna total (efecto lateral NQS) + + Bv linear temperature coefficient + coeficiente de temperatura lineal Bv - - - - - Ration of internal to total minority charge - Porcentaje de la carga interna a minoria total - - - - - - - - Forward ideality factor of substrate transfer current - Factor ideal directo de la corriente de transferencia del sustrato + Rs linear temperature coefficient + coeficiente de temperatura lineal Rs - - - - - C-S diode saturation current - Corriente de saturación del diodo C-S + Tt linear temperature coefficient + coeficiente de temperatura lineal Tt - - - - - - Ideality factor of C-S diode current - Factor ideal de la corriente del diodo C-S + + Tt quadratic temperature coefficient + coeficiente de temperatura cuadrático Tt - - - - - Transit time for forward operation of substrate transistor - Tiempo transitorio para la operación directa del sustrato transistor + M linear temperature coefficient + coeficiente de temperatura lineal M - - - - - - Substrate series resistance - Resistencia serie del sustrato + + M quadratic temperature coefficient + coeficiente de temperatura cuadrático M - - - - - - Substrate shunt capacitance - Capacidad desviada del sustrato + + + default area for diode + area predeterminada para el diodo - - - - - - Internal B-E zero-bias depletion capacitance - Capacidad de la unión B-E interna polarizada a cero + + Diode + Diodo - - - - - - Internal B-E built-in potential - Potencial físico de la unión interna B-E + + data voltage level shifter (digital to analogue) verilog device + - - - - - Internal B-E grading coefficient - Coeficiente de graduación interna B-E + + voltage level + - - - - - Ratio of maximum to zero-bias value of internal B-E capacitance - Porcentaje del valor máximo de polarización de la capacidad B-E interna + + time delay + - - - - - - Peripheral B-E zero-bias depletion capacitance - Capacidad de deflexión periférica B-E polarizada a cero + + D2A Level Shifter + - - - - - - Peripheral B-E built-in potential - Potencial de la unión periférica B-E + + data voltage level shifter (analogue to digital) verilog device + + + + + + + + + + + - - - - - Peripheral B-E grading coefficient - Coeficiente del gradiente periférico B-E - - - - - - - - Ratio of maximum to zero-bias value of peripheral B-E capacitance - Porcentaje del valor máximo de polarización de la capacidad B-E periférica - - - - - - - - Internal B-C zero-bias depletion capacitance - Capacidad de la unión B-C interna polarizada a cero + + + + + + + + + + + + V + V - - - - - - Internal B-C built-in potential - Potencial físico de la unión interna B-C + + A2D Level Shifter + - - - - - - Internal B-C grading coefficient - Coeficiente de graduación interna B-C + + 2to4 demultiplexer verilog device + - - - - - - Internal B-C punch-through voltage - Tensión de ruptura interna B-C + + 2to4 Demux + - - - - - - External B-C zero-bias depletion capacitance - Capacidad de la unión B-C externa polarizada a cero + + 3to8 demultiplexer verilog device + - - - - - - External B-C built-in potential - Potencial de la unión externa B-C + + 3to8 Demux + - - - - - - External B-C grading coefficient - Coeficiente de graduación externa B-C + + 4to16 demultiplexer verilog device + - - - - - - External B-C punch-through voltage - Tensión de ruptura externa B-C + + 4to16 Demux + - - - - - Partitioning factor of parasitic B-C cap - Factor de particionado de la capacidad parásita en la unión B-C + + externally controlled voltage source + - - - - - Partitioning factor of parasitic B-E cap - Factor de particionado de la capacidad parásita en la unión B-E + + + voltage in Volts + tensión en Voltios - - - - - - C-S zero-bias depletion capacitance - Capacidad de reducción de la unión C-S polarizada a cero + + Externally Controlled Voltage Source + - - - - - - C-S built-in potential - Potencial de la unión C-S + + EPFL-EKV MOS 2.6 verilog device + - - - - - - C-S grading coefficient - Coeficiente de graduación C-S + + long = 1, short = 2 + - - - - - C-S punch-through voltage - Tensión de ruptura C-S + length parameter + + - - - - - Low current forward transit time at VBC=0V - Tiempo de transición de baja intensidad en directa con VBC=0V - - + - - - - - Time constant for base and B-C space charge layer width modulation - Constante de tiempo para la base y capa de carga espacial B-C con modulación - - - - - - Time constant for modelling carrier jam at low VCE - Constante de tiempo para modelado de portadora fija con VCE baja + + + + + m + - - - - - - Neutral emitter storage time - Tiempo de almacenamiento de emisor neutro + + Width parameter + - - - - - Exponent factor for current dependence of neutral emitter storage time - Factor exponencial para la dependencia de corriente del tiempo de almacenamiento de emisor neutro + parallel multiple device number + - - - - - Saturation time constant at high current densities - Constante de tiempo de saturación en densidades de corriente altas + series multiple device number + - - - - - - Smoothing factor for current dependence of base and collector transit time - Factor de suavizado para la dependencia de corriente del tiempo de transición de base y colector + + gate oxide capacitance per unit area + - - - - - - Partitioning factor for base and collector portion - Factor de particionado para la porción de la base y el colector + + F/m**2 + - - - - - Internal collector resistance at low electric field - Resistencia interna del colector en campo eléctrico débil + metallurgical junction depth + - - - - - Voltage separating ohmic and saturation velocity regime - Régimen de velocidad de saturación y tensión de separación óhmica + channel width correction + - - - - - Internal C-E saturation voltage - Tensión de saturación interna C-E + channel length correction + - - - - - Collector punch-through voltage - Tensión de ruptura del colector + long channel threshold voltage + - - - - - Storage time for inverse operation - Tiempo de almacenamiento para inversa + body effect parameter + - - - - - - Total parasitic B-E capacitance - Capacidad parásita total B-E + + V**(1/2) + - - - - - - Total parasitic B-C capacitance - Capacidad parásita total B-C + + bulk Fermi potential + - - - - - Factor for additional delay time of minority charge - Factor para el tiempo de retardo adicional de aminoración de carga + + + transconductance parameter + parámetro de transconductancia - - - - - - Factor for additional delay time of transfer current - Factor para el tiempo de retardo adicional de corriente de transferencia + + + A/V**2 + - - - - Flag for turning on and off of vertical NQS effect - Marca de inflexión ON/OFF de efecto vertical NQS + mobility reduction coefficient + - - - - - - Flicker noise coefficient - Coeficiente de ruido parpadeante + + + + + + 1/V + 1/V - - - - - Flicker noise exponent factor - Factor exponencial de ruido parpadeante + mobility coefficient + - - - - - Flag for determining where to tag the flicker noise source - Marca para determinar la etiqueta de la fuente de ruido de parpadeo + + + + V/m + - - - - - - Scaling factor for collector minority charge in direction of emitter width - Factor de escala para la carga de aminoración del colector en la dirección del ancho del emisor + + + longitudinal critical field + - - - - - - Scaling factor for collector minority charge in direction of emitter length - Factor de escala para la carga de aminoración del colector en la dirección del largo del emisor + + depletion length coefficient + - - - - - Bandgap voltage extrapolated to 0 K - Banda de salto de tensión extrapolada a 0 K - - - - - - - - First order relative TC of parameter T0 - TC relativo de primer orden del parámetro T0 + narrow-channel effect coefficient + - - - - - - Second order relative TC of parameter T0 - TC relativo de segundo orden del parámetro T0 + + reverse short channel charge density + - - - - - - Temperature exponent for RCI0 - Exponente de temperatura para RCI0 + + A*s/m**2 + - - - - - Relative TC of saturation drift velocity - TC relativa de saturación en la velocidad de deriva + characteristic length + - - - - - Relative TC of VCES - TC relativa de VCES + threshold voltage temperature coefficient + - - - - - - Temperature exponent of internal base resistance - Exponente de temperatura de la resistencia de base interna + + V/K + V/K - - - - - Temperature exponent of external base resistance - Exponente de temperatura de la resistencia de base externa + mobility temperature coefficient + - - - - - Temperature exponent of external collector resistance - Exponente de temparatura de la resistencia de colector externa + Longitudinal critical field temperature exponent + - - - - - Temperature exponent of emitter resistance - Exponente de temperatura de la resistencia del emisor + Ibb temperature coefficient + - - - - - - Temperature exponent of mobility in substrate transistor transit time - Exponente de mobilidad de la temperatura en el tiempo de transición del sustrato del transistor + + 1/K + 1/K - - - - Effective emitter bandgap voltage - Tensión efectiva de salto de banda de emisor - - - - - - - Effective collector bandgap voltage - Tensión efectiva de salto de banda de colector - - - - - - - Effective substrate bandgap voltage - Tensión efectiva de salto de banda de sustrato + heavily doped diffusion length + - - - - Coefficient K1 in T-dependent band-gap equation - Ecuación de salto de banda del coeficiente K1 en función de T - - - - - - - Coefficient K2 in T-dependent band-gap equation - Ecuación de salto de banda del coeficiente K2 en función de T + drain/source diffusion sheet resistance + - - - - - Exponent coefficient in B-E junction current temperature dependence - Coeficiente exponencial de corriente en la unióm B-E en función de la temperatura + + Ohm/square + - - - - - Relative TC of forward current gain for V2.1 model - TC relativa de la ganancia de corriente directa para el modelo V2.1 + source contact resistance + + - - - - Flag for turning on and off self-heating effect - Marca de inflexión ON/OFF del efecto de auto-calentamiento - - + - - - - J/W - J/W - - - - - - - Flag for compatibility with v2.1 model (0=v2.1) - Marca par la compatibilidad con el modelo v2.1 (0=v2.1) - - - - - - - - Temperature at which parameters are specified - Temperatura a la que se especifican los parámetros - - + + + + - - - - - Temperature change w.r.t. chip temperature for particular transistor - Temperature change w.r.t. chip temperature for particular transistor - - - - HICUM L2 v2.22 - Transistores HICUM L2 v2.22 + + + + Ohm + Ohm - - HICUM Level 0 v1.2 verilog device - Dispositivo Verilog HICUM Level 2 v2.1 {0 ?} {1.2 ?} + + drain contact resistance + - - - - reverse Early voltage (normalization volt.) + + gate to source overlap capacitance - - - - flag for turning on base related critical current + + + + + F/m - - - - Smoothing factor for the d.c. injection width + + gate to drain overlap capacitance - - - - BE charge built-in voltage for d.c. transfer current + + gate to bulk overlap capacitance - - - charge BE exponent factor for d.c. transfer current + first impact ionization coefficient - - - - BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current + + 1/m - - - TC of iqf + + second impact ionization coefficient - - - - Exponent factor for temperature dependent thermal resistance + + saturation voltage factor for impact ionization - - npn HICUM L0 v1.2 - npn HICUM L0 v1.2 {0 ?} + + area related theshold voltage mismatch parameter + - - pnp HICUM L0 v1.2 - pnp HICUM L0 v1.2 {0 ?} + + V*m + - - HICUM Level 0 v1.2g verilog device + + area related gain mismatch parameter - - high-injection roll-off current + + area related body effect mismatch parameter - - TC of iqf (bandgap coefficient of zero bias hole charge) + + sqrt(V)*m - - TC of avalanche prefactor, identical to alfav of Hicum/L2 - + + + + + + + + + + + A + A + + - TC of avalanche exponential factor, identical to alqav of Hicum/L2 - + + + + + F + F - - Emitter part coefficient of the zero bias hole charge temperature variation + + + diode relative area - - Collector part coefficient of the zero bias hole charge temperature variation + + charge partition parameter - Bandgap TC parameter of ver - + + + + + + + parameter measurement temperature + temperatura de medida del parámetro - - Bandgap TC parameter of vef - + + + + + + + + Celsius + Celsius - - Specific recombination current at the BC barrier for high forward injection + + EPFL-EKV NMOS 2.6 - - npn HICUM L0 v1.2g - npn HICUM L0 v1.2g {0 ?} + + EPFL-EKV PMOS 2.6 + - - pnp HICUM L0 v1.2g - pnp HICUM L0 v1.2g {0 ?} + + equation defined device + dispositivo de ecuación definida - - HICUM Level 0 v1.3 verilog device - Dispositivo Verilog HICUM Level 2 v2.1 {0 ?} {1.3 ?} + + type of equations + tipos de ecuaciones - - Flag for using third order solution for transfer current - + + number of branches + número de ramas - - bias dependence for reverse Early voltage - + + + current equation + equación de corriente - - Flag for turning temperature dependence of tef0 on and off - + + + charge equation + ecuación de carga - - TC of Reverse Early voltage - + + Equation Defined Device + Dispositivo de Ecuación Definida - - TC of AVER - + + equation + ecuación - - Bandgap difference between base and BE-junction - + + + + Equation + Ecuación - - Frist-order TC of iqfh - + + put result into dataset + poner los resultados en el conjunto de datos - - Second-order TC of iqfh + + externally driven transient simulation - - npn HICUM L0 v1.3 - npn HICUM L0 v1.3 {0 ?} + + + integration method + método de integración - - pnp HICUM L0 v1.3 - pnp HICUM L0 v1.3 {0 ?} + + + order of integration method + orden del método de integración - - HICUM Level 2 v2.1 verilog device - Dispositivo Verilog HICUM Level 2 v2.1 + + + initial step size in seconds + tamaño del paso inicial en segundos - - Partitioning factor of parasitic B-C capacitance - Factor de particionado de la capacidad parásita B-C + + + minimum step size in seconds + tamaño del paso mínimo en segundos - - Noise factor for internal base resistance - Factor de ruido para la resistencia de base interna + + + relative tolerance of local truncation error + tolerancia relativa del error de redondeo local - - HICUM L2 v2.1 - HICUM L2 v2.1 + + + absolute tolerance of local truncation error + tolerancia absoluta del error de redondeo local - - HICUM Level 2 v2.23 verilog device - Dispositivo Verilog HICUM Level 2 v2.1 {2 ?} {2.23 ?} + + + overestimation of local truncation error + sobrestimación del error de redondeo local - - HICUM L2 v2.23 - HICUM L2 v2.23 {2 ?} + + + relax time step raster + - - HICUM Level 2 v2.24 verilog device - Dispositivo Verilog HICUM Level 2 v2.1 {2 ?} {2.24 ?} + + + perform an initial DC analysis + realizar un análisis DC inicial - - HICUM L2 v2.24 - HICUM L2 v2.24 {2 ?} + + + maximum step size in seconds + tamaño máximo del paso en segundos - - hicumL2V2p31n verilog device + + External transient simulation - - Weight factor for the low current minority charge + + 1bit full adder verilog device - - Parameter describing the slope of hjEi(VBE) + + 1Bit FullAdder - - Smoothing parameter for hjEi(VBE) at high voltage + + 2bit full adder verilog device - - Time constant for modeling carrier jam at low VCE + + 2Bit FullAdder - - Barrier voltage + + gated D latch verilog device - - Normalization parameter + + Gated D-Latch - - Smoothing parameter for barrier voltage + + 4bit Gray to binary converter verilog device - - fitting factor for critical current + + 4Bit Gray2Bin - - Flag for turning on and off of correlated noise implementation - + + ground (reference potential) + tierra (potencial de referencia) - - Emitter resistance flicker noise coefficient - + + Ground + Tierra - - Emitter resistance flicker noise exponent factor - + + gyrator (impedance inverter) + girador (inversor de impendancia) - - Bandgap difference between B and B-E junction used for hjEi0 and hf0 - + + gyrator ratio + porcentaje de girador - - Temperature coefficient for ahjEi - + + Gyrator + Girador - - Temperature coefficient for hjEi0 + + 1bit half adder verilog device - - Temperature coefficient for Rth + + 1Bit HalfAdder - - First order relative TC of parameter Rth - + + Harmonic balance simulation + Simulación de equilibrio armónico - - HICUM L2 V2.31 - + + number of harmonics + número de armónicos + + + + Harmonic balance + Equilibrio armónico @@ -12084,7 +7791,7 @@ Wrong 'component' line format! - + ERROR: No file name in SPICE component "%1". ERROR: Sin nombre de archivo en el componente SPICE "%1". @@ -12507,11 +8214,15 @@ Wrong 'component' line format! Fuente de Corriente Controlada por Tensión - voltage controlled voltage source fuente de tensión controlada por tensión + + + voltage controlled resistor + + resistance gain @@ -12546,7 +8257,7 @@ Wrong 'component' line format! - + ERROR: No file name in %1 component "%2". ERROR: Sin nombre de archivo en %1 componente "%2". @@ -12709,7 +8420,7 @@ Wrong 'component' line format! - + invalid inválido @@ -12821,7 +8532,7 @@ Wrong 'component' line format! - + Successfully exported @@ -12844,8 +8555,8 @@ Use PNG, JPEG or SVG graphics! - - + + verilog-a user devices @@ -12904,14 +8615,14 @@ Use PNG, JPEG or SVG graphics! - + diagrams - + paintings @@ -13029,16 +8740,16 @@ Set the Octave location on the application settings. - + - + untitled sinTítulo - + Format Error: 'Painting' field is not closed! @@ -13213,17 +8924,17 @@ Unknown field! ERROR: No puedo cargar el subcircuito "%1". - + WARNING: Skipping library component "%1". AVISO: Saltando el componente de la biblioteca "%1". - - ERROR: Cannot load library component "%1". - ERROR: No puedo cargar el componente de la librería "%1". + + ERROR: "%1": Cannot load library component "%2" from "%3" + - + WARNING: Ignore simulation component in subcircuit "%1". AVISO: Ignora simulación de componente en el subcircuito "%1". @@ -13233,7 +8944,7 @@ Unknown field! - + ERROR: Only one digital simulation allowed. ERROR: Sólo está permitida una simulación digital. @@ -13361,11 +9072,17 @@ a substrate with lower permittivity and larger height. Cannot save settings file ! + + + Quarter wave filters do not allow low-pass nor high-pass masks + + + QucsActiveFilter - + &File &Archivo @@ -13375,7 +9092,29 @@ a substrate with lower permittivity and larger height. &Salir - + + &View + &Ver + + + + &Console + + + + + Enables/disables the filter calculation console + + + + + Console + +Enables/disables the filter calculation console + + + + &Help &Ayuda @@ -13395,30 +9134,30 @@ a substrate with lower permittivity and larger height. Acerca de Qt... - - + + Passband attenuation, Ap (dB) - + Stopband attenuation, As (dB) - - Cuttof frequency, Fc (Hz) + + Cutoff frequency, Fc (Hz) - - + + Stopband frequency, Fs (Hz) - + Passband ripple Rp(dB) @@ -13428,7 +9167,7 @@ a substrate with lower permittivity and larger height. - + Filter order @@ -13478,27 +9217,61 @@ a substrate with lower permittivity and larger height. - - Calculation console + + Low Pass - - Filter topology + + General filter amplitude-frequency response - - Filter type: - Tipo de filtro: + + + + Unable to implement filter with such parameters and topology +Change parameters and/or topology and try again! + + + + + + Filter calculation was successful + - LowPass + Filter calculation terminated with error! + + + + + Filter calculation terminated with error + + + + + Lower cutoff frequency, Fl (Hz) + + + + + Copyright (C) 2014, 2015 by + Copyright (C) 2005, 2006 por {2014, 2015 ?} + + + + Filter topology + Filter type: + Tipo de filtro: + + + High Pass @@ -13524,62 +9297,45 @@ a substrate with lower permittivity and larger height. - + Cauer section - - General amplitude frequency response - - - - - Filter topology preview (one stage) - - - - + Filter parameters - + Transfer function and Topology - - General filter amplidure-frequency response - - - - + Filter topology preview - + Filter calculation console - + + + Ready. + Listo. + + + Upper cutoff frequency of band-pass/band-stop filter is less than lower. Unable to implement such filter. Change parameters and try again. - - - - Unable to implement filter with such parameters and topology -Change parapeters and/or topology and try again! - - - - + Unable to use Cauer section for Chebyshev or Butterworth frequency response. Try to use another topology. @@ -13595,40 +9351,28 @@ frequency response. Try to use another topology. Function will be implemented in future version - - - -Filter calculation was sucessfull - - - - - -Filter calculation terminated with error - - Upper cutoff frequency, Fu (Hz) - - Lower cuttoff frequency, Fl (Hz) + + Transient bandwidth, TW (Hz) - - Transient bandwidth, TW (Hz) + + Error! - + Active filter design - + About... Acerca de... @@ -13640,12 +9384,7 @@ Active Filter synthesis program - - Copyright (C) 2014 by - Copyright (C) 2005, 2006 por {2014 ?} - - - + About Qt Acerca de Qt @@ -13653,7 +9392,7 @@ Active Filter synthesis program QucsApp - + Schematic Esquema @@ -13669,42 +9408,42 @@ Active Filter synthesis program - + VHDL Sources Fuentes VHDL - - + + Verilog Sources Fuentes Verilog - - + + Verilog-A Sources - - + + Octave Scripts - + Spice Files - + Any File Cualquier Archivo - + The schematic search path has been refreshed. @@ -13724,7 +9463,7 @@ Active Filter synthesis program Esquemas - + New Nuevo @@ -13809,13 +9548,13 @@ Active Filter synthesis program - + - + @@ -13838,7 +9577,7 @@ Active Filter synthesis program Error - + Cannot open "%1". No puedo abrir "%1". @@ -13850,8 +9589,16 @@ Active Filter synthesis program La librería está corrupta. - - + + + + + Search results + + + + + @@ -13870,13 +9617,18 @@ Active Filter synthesis program Información - + Default icon not found: %1.png - + + verilog-a user devices + + + + -port -conexiones @@ -13887,7 +9639,7 @@ Active Filter synthesis program - + The document contains unsaved changes! ¡El documento contiene cambios no guardados! @@ -13895,7 +9647,7 @@ Active Filter synthesis program - + Do you want to save the changes before copying? @@ -13906,13 +9658,13 @@ Active Filter synthesis program - + &Save &Guardar - + Copy file @@ -13946,31 +9698,31 @@ Active Filter synthesis program - + Warning Aviso - + This will delete the file permanently! Continue ? ¡Esto eliminará el archivo para siempre! ¿Continuo? - + No No - + - + Yes Sí - + unknown @@ -14131,7 +9883,7 @@ Active Filter synthesis program - + @@ -14145,7 +9897,7 @@ Active Filter synthesis program Listo. - + Creating new text editor... Creando un nuevo editor de textos... @@ -14210,12 +9962,12 @@ Active Filter synthesis program - + Cancel Cancelar - + Cannot overwrite an open document No puedo sobreescribir un documento abierto @@ -14230,7 +9982,7 @@ Active Filter synthesis program Guardando todos los archivos... - + Closing file... Cerrando el archivo... @@ -14254,10 +10006,6 @@ Active Filter synthesis program Open examples directory... - - OK - Aceptar - Printing... @@ -16208,110 +11956,6 @@ Acerca de Qt por Trolltech Warnings in last simulation! Press F5 Avisos en la última simulación! Pulsa F5 - - About... - Acerca de... - - - Qucs Version - Versión de Qucs - - - Quite Universal Circuit Simulator - Quite Universal Circuit Simulator - - - Copyright (C) - Copyright (C) - - - by Michael Margraf - por Michael Margraf - - - Simulator by Stefan Jahn - Simulador por Stefan Jahn - - - VHDL simulator 'FreeHDL' by Edwin Naroska and Marius Vollmer - Simulador VHDL 'FreeHDL' por Edwin Naroska y Marius Vollmer - - - Special thanks to Jens Flucke and Raimund Jacob - Agradecimiento especial a Jens Flucke y Raimund Jacob - - - Many thanks to Mike Brinson for correcting the VHDL output - Muchas gracias a Mike Brinson por corregir la salida VHDL - - - GUI improvements by Gopala Krishna A - Mejoras en el interfaz gráfico por Gopala Krishna A - - - Verilog-AMS interface by Helene Parruitte - Interfaz Verilog-AMS por Helene Parruitte - - - Translations: - Traducciones: - - - German by Stefan Jahn - Alemán por Stefan Jahn - - - Polish by Dariusz Pienkowski - Polaco por Dariusz Pienkowski - - - Romanian by Radu Circa - Rumano por Radu Circa - - - French by Vincent Habchi, F5RCS - Francés por Vincent Habchi, F5RC - - - Spanish by Jose L. Redrejo Rodriguez - Español por José L. Redrejo Rodríguez - - - Japanese by Toyoyuki Ishikawa - Japonés por Toyoyuki Ishikawa - - - Italian by Giorgio Luparia and Claudio Girardi - Italiano por Giorgio Luparia y Claudio Girardi - - - Hebrew by Dotan Nahum - Hebreo por Dotan Nahum - - - Swedish by Peter Landgren - Sueco por Peter Landgren - - - Turkish by Onur and Ozgur Cobanoglu - Turco por Onur y Ozgur Cobanoglu - - - Hungarian by Jozsef Bus - Húngaro por Jozsef Bus - - - Russian by Igor Gorbounov - Ruso por Igor Gorbounov - - - Czech by Marek Straka - Checo por Marek Straka - - - Catalan by Antoni Subirats - Catalán por Antoni Subirats - QucsAttenuator @@ -16582,7 +12226,7 @@ Editor de texto muy simple para Qucs QucsFilter - + &File &Archivo @@ -16622,7 +12266,7 @@ Editor de texto muy simple para Qucs - + Filter type: Tipo de filtro: @@ -16658,29 +12302,29 @@ Editor de texto muy simple para Qucs - + Corner frequency: Frecuencia de esquina: - + Stop frequency: Frecuencia de paro: - + Stop band frequency: Frecuencia de la banda de parada: - - + + Pass band ripple: Rizado del paso banda: - + Stop band attenuation: Atenuación de la banda de parada: @@ -16749,19 +12393,19 @@ Programa de síntexis de filtros - + Result: Resultado: - + Error Error - + Stop frequency must be greater than start frequency. La frecuencia final debe ser mayor que la frecuencia inicial. @@ -16918,17 +12562,22 @@ Habilita/deshabilita la tabla de contenidos Acerca de - + Component Selection Selección de Componente - - Search... - Buscar... + + Search Lib Components + - + + Clear + + + + Component Componente @@ -16943,7 +12592,7 @@ Habilita/deshabilita la tabla de contenidos Mostrar modelo - + About... Acerca de... @@ -16954,6 +12603,12 @@ Habilita/deshabilita la tabla de contenidos Gestor de librería para Qucs + + + Copyright (C) 2011-2015 Qucs Team + + + Copyright (C) 2005 by Michael Margraf @@ -16962,7 +12617,7 @@ Habilita/deshabilita la tabla de contenidos - + QucsLib Help Ayuda de QucsLib @@ -16982,14 +12637,17 @@ Habilita/deshabilita la tabla de contenidos Modelo - - Search result - Resultado de la búsqueda + + + + + Search results + - + - + @@ -16998,13 +12656,13 @@ Habilita/deshabilita la tabla de contenidos Error - + Cannot open "%1". No puedo abrir "%1". - + @@ -17012,21 +12670,6 @@ Habilita/deshabilita la tabla de contenidos Library is corrupt. La librería está corrupta. - - - Search Library Component - Buscar en la Biblioteca de Componentes - - - - Result - Resultado - - - - No appropriate component found. - No se ha encontrado el componente apropiado. - QucsSettingsDialog @@ -18042,7 +13685,7 @@ Edita los símbolos de este esquema - + Error Error @@ -18060,7 +13703,7 @@ Set the admsXml location on the application settings. - + ERROR: Cannot create library file "%s". ERROR: No se pudo crear el archivo de biblioteca "%1". @@ -18069,83 +13712,46 @@ Set the admsXml location on the application settings. SearchDialog - - - - Dialog - - - - Text to search for Texto de búsqueda - - - - Text to replace with Texto a reemplazar - - - - Ask before replacing Preguntar antes de reemplazar - - - - Case sensitive Distingue mayúsculas - - - - Whole words only Sólo palabras completas - - - - Search backwards Búsqueda inversa - - - - Next - - - - - Close Cerrar @@ -18159,32 +13765,6 @@ Set the admsXml location on the application settings. Search Text Texto de Búsqueda - - - The search result contains all components whose -name contains the search string. All libraries -are included in the search. - Los resultados de la búsqueda contienen todos los -componentes cuyos nombres tienen la cadena -de búsqueda. Todas las librerías están incluidas -en la búsqueda. - - - - Search string: - Cadena de búsqueda: - - - - Search - Buscar - - - - - Search result - Resultado de la búsqueda - SettingsDialog @@ -18466,12 +14046,6 @@ en la búsqueda. Simulation aborted by the user! - - Errors: -------- - Errores: ----------- - SpiceDialog @@ -18634,7 +14208,7 @@ en la búsqueda. SymbolWidget - + Symbol: Símbolo: @@ -18643,6 +14217,13 @@ en la búsqueda. ! Drag n'Drop me ! ¡ Arrástrame y suéltame ! + + + Warning: Symbol '%1' missing in Qucs Library. +Drag and Drop may still work. +Please contact the developers. + + TextDoc diff --git a/qucs/translations/qucs_fr.ts b/qucs/translations/qucs_fr.ts index 8cbeeb4da4..024cadd7eb 100644 --- a/qucs/translations/qucs_fr.ts +++ b/qucs/translations/qucs_fr.ts @@ -1135,10 +1135,6 @@ Cancel Annuler - - File - Fichier - Width in pixels @@ -3534,62 +3530,6 @@ Resistor color code computation program - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - @@ -3745,10 +3685,6 @@ Resistor color code computation program - - - - polarity @@ -3953,10 +3889,6 @@ Resistor color code computation program - - - - @@ -4097,5709 +4029,1480 @@ Resistor color code computation program Fil libre - - bsim3v34nMOS verilog device - + + + + + + + + + + + simulation temperature + Température du composant simulé + + + + capacitor + condensateur + capacitance in Farad + capacité en farads + + + initial voltage for transient simulation + Tension initiale pour la simulation en transitoire + + + + + + + + schematic symbol + symbole + + + + Capacitor + Condensateur + + + + current controlled current source + source de courant contrôlée en courant + + + + + + forward transfer factor + facteur de transfert direct + + + + + + + + + + + + + + + delay time + délai + + + + Current Controlled Current Source + Source de courant contrôlée en courant + + + + current controlled voltage source + source de tension contrôlée en courant + + + + Current Controlled Voltage Source + Source de courant contrôlée en tension + + + + circulator + circulateur + + + + reference impedance of port 1 + impédance de référence du port 1 + + + reference impedance of port 2 + impédance de référence du port 2 + + + reference impedance of port 3 + impédance de référence du port 3 + + + + Circulator + Circulateur + + + + coaxial transmission line + ligne coaxiale + + + + + relative permittivity of dielectric + perméabilité relative du diélectrique + + + + + specific resistance of conductor + résistance du metal + + + + + relative permeability of conductor + perméabilité relative du conducteur + + + inner diameter of shield + diamètre interne du blindage + + + diameter of inner conductor + diamètre de l'âme + + + + mechanical length of the line + longueur physique de la ligne + + + + + + loss tangent + angle de perte + + + + Coaxial Line + Coax + + + + 1bit comparator verilog device + + + + + 1Bit Comparator + + + + + 2bit comparator verilog device + + + + + 2Bit Comparator + + + + + 4bit comparator verilog device + + + + + 4Bit Comparator + + + + + number of input ports + nombre de ports d'entrée + + - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - simulation temperature - Température du composant simulé - - - - bsim3v34nMOS - - - - - bsim3v34pMOS verilog device - - - - - bsim3v34pMOS - - - - - bsim4v30nMOS verilog device - - - - - bsim4v30nMOS - - - - - bsim4v30pMOS verilog device - - - - - bsim4v30pMOS - - - - - capacitor - condensateur - - - - capacitance in Farad - capacité en farads - - - - initial voltage for transient simulation - Tension initiale pour la simulation en transitoire - - - - - - - - - schematic symbol - symbole - - - - Capacitor - Condensateur - - - - current controlled current source - source de courant contrôlée en courant - - - - - - forward transfer factor - facteur de transfert direct - - - - - - - - - - - - - - - delay time - délai - - - - Current Controlled Current Source - Source de courant contrôlée en courant - - - - current controlled voltage source - source de tension contrôlée en courant - - - - Current Controlled Voltage Source - Source de courant contrôlée en tension - - - - circulator - circulateur - - - - reference impedance of port 1 - impédance de référence du port 1 - - - - reference impedance of port 2 - impédance de référence du port 2 - - - - reference impedance of port 3 - impédance de référence du port 3 - - - - Circulator - Circulateur - - - - coaxial transmission line - ligne coaxiale - - - - - relative permittivity of dielectric - perméabilité relative du diélectrique - - - - - - specific resistance of conductor - résistance du metal - - - - - - relative permeability of conductor - perméabilité relative du conducteur - - - - inner diameter of shield - diamètre interne du blindage - - - - diameter of inner conductor - diamètre de l'âme - - - - - mechanical length of the line - longueur physique de la ligne - - - - - - - loss tangent - angle de perte - - - - Coaxial Line - Coax - - - - 1bit comparator verilog device - - - - - 1Bit Comparator - - - - - 2bit comparator verilog device - - - - - 2Bit Comparator - - - - - 4bit comparator verilog device - - - - - 4Bit Comparator - - - - - number of input ports - nombre de ports d'entrée - - - - - - - voltage of high level - niveau du 1 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Error - Erreur - - - - Format Error: -Wrong line start! - Erreur de Format : -Début de ligne incorrect ! - - - - Format Error: -Unknown component! -%1 - -Do you make use of loadable components? - - - - - Format Error: -Wrong 'component' line format! - Erreur de format : -Ligne « composant » incohérente ! - - - - coplanar line - ligne coplanaire - - - - - - - - - - - - - - name of substrate definition - Nom du modèle de substrat - - - - - - - - - - - width of the line - largeur de la ligne - - - - - - - width of a gap - largeur de l'espacement - - - - - - - length of the line - longueur de la ligne - - - - - - - material at the backside of the substrate - métallisation inférieure du substrat - - - - use approximation instead of precise equation - utiliser une heuristique à la place de l'équation exacte - - - - Coplanar Line - Ligne coplanaire - - - - ideal coupler - coupleur idéal - - - - coupling factor - couplage - - - - phase shift of coupling path in degree - déphasage du couplage en degrés - - - - Coupler - Coupleur - - - - coplanar gap - fente coplanaire - - - - width of gap between the two lines - largeur de la fente entre les deux lignes - - - - Coplanar Gap - Fente coplanaire - - - - coplanar open - fin de ligne coplanaire - - - - width of gap at end of line - largeur de la fente à la fin de la ligne - - - - Coplanar Open - Fin de ligne coplanaire - - - - coplanar short - court-circuit coplanaire - - - - Coplanar Short - Court-circuit coplanaire - - - - coplanar step - changement de largeur coplanaire - - - - - - width of line 1 - largeur de la ligne 1 - - - - - - width of line 2 - largeur de la ligne 2 - - - - distance between ground planes - distance entre les plans de masse - - - - Coplanar Step - Changement de largeur Coplanaire - - - - coupled transmission lines - - - - - characteristic impedance of even mode - - - - - characteristic impedance of odd mode - - - - - - - - electrical length of the line - longueur électrique - - - - relative dielectric constant of even mode - - - - - relative dielectric constant of odd mode - - - - - attenuation factor per length of even mode - - - - - attenuation factor per length of odd mode - - - - - Coupled Transmission Line - - - - - D flip flop with asynchron reset - Bascule D avec R asynchrone - - - - D-FlipFlop - Bascule D - - - - - dc simulation - Simulation du point de fonctionnement - - - - - - - relative tolerance for convergence - erreur relative de convergence - - - - - - - absolute tolerance for currents - tolérance absolue pour les intensités - - - - - - - absolute tolerance for voltages - tolérance absolue pour les tensions - - - - put operating points into dataset - inclure les points de fonctionnement dans les résultats - - - - - - - maximum number of iterations until error - nombre maximum d'itérations - - - - save subcircuit nodes into dataset - enregistrer les nœuds du sous-circuit dans les résultats - - - - preferred convergence algorithm - Algorithme de convergence préféré - - - - - - method for solving the circuit matrix - méthode d'inversion matricielle - - - - dc block - Découplage - - - - dc Block - Découplage - - - - dc feed - Arrivée continue - - - - dc Feed - Polarisation - - - - D flip flop with set and reset verilog device - - - - - - - - cross coupled gate transfer function high scaling factor - - - - - - - - cross coupled gate transfer function low scaling factor - - - - - - - - cross coupled gate delay - - - - - D-FlipFlop w/ SR - - - - - diac (bidirectional trigger diode) - - - - - - (bidirectional) breakover voltage - - - - - (bidirectional) breakover current - - - - - - - parasitic capacitance - - - - - - - - - emission coefficient - coeffcient d'émission - - - - - - intrinsic junction resistance - - - - - Diac - - - - - - digital simulation - simulation numérique - - - - type of simulation - type de simulation - - - - duration of TimeList simulation - durée de la simulation TimeList - - - - netlist format - format de la netlist - - - - - digital source - source numérique - - - - - number of the port - numéro du port - - - - initial output value - valeur de sortie initiale - - - - list of times for changing output value - liste d'instants pour changer la valeur de sortie - - - - diode - diode - - - - - - zero-bias junction capacitance - capacité de la jonction à polarisation nulle - - - - - - - - grading coefficient - coefficient de gradation - - - - - - - junction potential - tension de jonction - - - - linear capacitance - capacité proportionnelle - - - - recombination current parameter - paramètre de recombinaison en courant - - - - emission coefficient for Isr - coefficient d'émission pour Isr - - - - ohmic series resistance - résistance réelle série - - - - - - transit time - temps de transit - - - - high-injection knee current (0=infinity) - Courant de seuil de forte injection (0 = infini) - - - - - - reverse breakdown voltage - tension de claquage inverse - - - - - - current at reverse breakdown voltage - courant à la tension de claquage inverse - - - - Bv linear temperature coefficient - coefficient linéaire de température de Bv - - - - Rs linear temperature coefficient - coefficient linéaire de température de Rs - - - - Tt linear temperature coefficient - coefficient linéaire de température de Tt - - - - Tt quadratic temperature coefficient - Coefficient de température quadratique de Tt - - - - M linear temperature coefficient - Coefficient linéaire de température de M - - - - M quadratic temperature coefficient - Coefficient quadratique de température de M - - - - - default area for diode - Surface par défaut de la diode - - - - Diode - Diode - - - - data voltage level shifter (digital to analogue) verilog device - - - - - - voltage level - - - - - - time delay - - - - - D2A Level Shifter - - - - - data voltage level shifter (analogue to digital) verilog device - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - V - - - - - A2D Level Shifter - - - - - 2to4 demultiplexer verilog device - - - - - 2to4 Demux - - - - - 3to8 demultiplexer verilog device - - - - - 3to8 Demux - - - - - 4to16 demultiplexer verilog device - - - - - 4to16 Demux - - - - - externally controlled voltage source - - - - - - voltage in Volts - tension en volts - - - - Externally Controlled Voltage Source - - - - - EPFL-EKV MOS 2.6 verilog device - - - - - long = 1, short = 2 - - - - - length parameter - - - - - - - - - - - - - m - - - - - Width parameter - - - - - parallel multiple device number - - - - - series multiple device number - - - - - gate oxide capacitance per unit area - - - - - F/m**2 - - - - - metallurgical junction depth - - - - - channel width correction - - - - - channel length correction - - - - - long channel threshold voltage - - - - - body effect parameter - - - - - V**(1/2) - - - - - bulk Fermi potential - - - - - - - transconductance parameter - transconductance - - - - - A/V**2 - - - - - mobility reduction coefficient - - - - - - - - - - - - - 1/V - - - - - mobility coefficient - - - - - - - V/m - - - - - - longitudinal critical field - - - - - depletion length coefficient - - - - - narrow-channel effect coefficient - - - - - reverse short channel charge density - - - - - A*s/m**2 - - - - - characteristic length - - - - - threshold voltage temperature coefficient - - - - - - - - - - - - - V/K - - - - - mobility temperature coefficient - - - - - Longitudinal critical field temperature exponent - - - - - Ibb temperature coefficient - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1/K - - - - - heavily doped diffusion length - - - - - drain/source diffusion sheet resistance - - - - - Ohm/square - - - - - source contact resistance - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Ohm - Ω - - - - drain contact resistance - - - - - gate to source overlap capacitance - - - - - - - - F/m - - - - - gate to drain overlap capacitance - - - - - gate to bulk overlap capacitance - - - - - first impact ionization coefficient - - - - - 1/m - - - - - second impact ionization coefficient - - - - - saturation voltage factor for impact ionization - - - - - area related theshold voltage mismatch parameter - - - - - V*m - - - - - area related gain mismatch parameter - - - - - area related body effect mismatch parameter - - - - - sqrt(V)*m - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - F - - - - - - diode relative area - - - - - charge partition parameter - - - - - - - - - - - parameter measurement temperature - température de mesure des paramètres - - - - - - - - - - Celsius - - - - - EPFL-EKV NMOS 2.6 - - - - - EPFL-EKV PMOS 2.6 - - - - - equation defined device - composant défini par une équation - - - - type of equations - type d'équations - - - - number of branches - nombre de branches - - - - - current equation - équation de courant - - - - - charge equation - équation de charge - - - - Equation Defined Device - Composant défini par une équation - - - - equation - équation - - - - - - Equation - Équation - - - - put result into dataset - inclure le résultat - - - - externally driven transient simulation - - - - - - integration method - méthode d'intégration - - - - - order of integration method - ordre d'intégration - - - - - initial step size in seconds - pas initial en secondes - - - - - minimum step size in seconds - pas minimum en secondes - - - - - relative tolerance of local truncation error - tolérance relative de l'erreur d'arrondi - - - - - absolute tolerance of local truncation error - tolérance absolue de l'erreur d'arrondi - - - - - overestimation of local truncation error - borne supérieure de l'erreur d'arrondi - - - - - relax time step raster - quantum de temps de relaxation - - - - - perform an initial DC analysis - Effectue un calcul préliminaire du point de fonctionnement - - - - - maximum step size in seconds - Intervalle maximal en secondes - - - - External transient simulation - - - - - 1bit full adder verilog device - - - - - 1Bit FullAdder - - - - - 2bit full adder verilog device - - - - - 2Bit FullAdder - - - - - gated D latch verilog device - - - - - Gated D-Latch - - - - - 4bit Gray to binary converter verilog device - - - - - 4Bit Gray2Bin - - - - - ground (reference potential) - masse (potentiel de référence) - - - - Ground - Masse - - - - gyrator (impedance inverter) - gyrateur (inverseur d'impédance) - - - - gyrator ratio - rapport de gyration - - - - Gyrator - Gyrateur - - - - 1bit half adder verilog device - - - - - 1Bit HalfAdder - - - - - Harmonic balance simulation - Équilibrage harmonique - - - - number of harmonics - nombre d'harmoniques - - - - Harmonic balance - Équilibrage harmonique - - - - HBT model by Ferdinand-Braun-Institut (FBH), Berlin - Modèle HBT par l'Institut Ferdinand Braun de Berlin - - - - - - - Ignored - Ignoré - - - - Device operating temperature, Celsius - Température de fonctionnement (°C) - - - - Thermal resistance, K/W - Résistance thermique (K.W⁻¹) - - - - - - - - - - - - - Thermal capacitance - Capacité thermique - - - - Scaling factor, number of emitter fingers - Facteur d'échelle : nombre de doigts de l'émetteur - - - - Length of emitter finger, m - Longueur d'un doigt d'émetteur (m) - - - - Width of emitter finger, m - Largeur d'un doigt d'émetteur (m) - - - - Forward saturation current density, A/um^2 - Seuil de saturation de la densité de courant direct (A.µm⁻²) - - - - Forward current emission coefficient - Coefficient d'émission de courant direct - - - - Forward thermal activation energy, V, (0 == disables temperature dependence) - Énergie d'activitation thermique directe (V) (0 = aucune dépendance thermique) - - - - B-E leakage saturation current density, A/um^2 - Seuil de saturation de la densité du courant de fuite B-E (A.µm⁻²) - - - - B-E leakage emission coefficient - Coefficient d'émission de fuite B-E - - - - Limiting resistor of B-E leakage diode, Ohm - Résistance de limitation de la diode parasitique B-E (Ω) - - - - B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - 2nd B-E leakage saturation current density, A/um^2 - Second seuil de saturation de la densité du courant de fuite B-E (A.µm⁻²) - - - - 2nd B-E leakage emission coefficient - Second coefficient d'émission de fuite B-E - - - - 2nd Limiting resistor of B-E leakage diode, Ohm - Seconde résistance de limitation de la diode parasitique B-E (Ω) - - - - 2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - Seconde énergie d'activitation thermique de fuite B-E (V) (0 = aucune dépendance thermique) - - - - Reverse saturation current density, A/um^2 - Seuil de saturation de la densité de courant inverse (A.µm⁻²) - - - - Reverse current emission coefficient - Coefficient d'émission de courant inverse - - - - Reverse thermal activation energy, V, (0 == disables temperature dependence) - Énergie d'activitation thermique inverse (V) (0 = aucune dépendance thermique) - - - - Fraction of Cjc that goes to internal base node - Portion de Cjc reporté sur la base interne - - - - B-C leakage saturation current density, A/um^2 (0. switches off diode) - Seuil de saturation de la densité du courant de fuite B-C (A.µm⁻²) - - - - B-C leakage emission coefficient (0. switches off diode) - coefficient d'émission de fuite B-C (0 : effet négligé) - - - - Limiting resistor of B-C leakage diode, Ohm - Résistance de limitation de la diode parasitique B-C (Ω) - - - - B-C leakage thermal activation energy, V, (0 == disables temperature dependence) - Énergie d'activitation thermique de fuite B-C (V) (0 = aucune dépendance thermique) - - - - Ideal forward beta - β direct idéal - - - - Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence) - Coefficient thermique du β direct (K⁻¹) (0 = aucune dépendance) - - - - Ideal reverse beta - β inverse idéal - - - - Forward Early voltage, V, (0 == disables Early Effect) - Tension d'Early directe (V) (0 : pas d'effet Early) - - - - Reverse Early voltage, V, (0 == disables Early Effect) - Tension d'Early inverse (V) (0 : pas d'effet Early) - - - - Forward high-injection knee current, A, (0 == disables Webster Effect) - Seuil du courant de forte injection direct (A) (0 = pas d'effet Webster) - - - - Reverse high-injection knee current, A, (0 == disables Webster Effect) - Seuil du courant de forte injection inverse (A) (0 = pas d'effet Webster) - - - - C-E breakdown exponent, (0 == disables collector break-down) - Exposant d'avalanche C-E (0 = pas d'effet Zéner) - - - - C-E breakdown voltage, V, (0 == disables collector break-down) - Tension d'avalanche C-E (V) (0 : aucun effet de claquage) - - - - C-E breakdown factor, (0 == disables collector break-down) - Facteur d'avalanche C-E (0 = pas d'effet Zéner) - - - - B-E breakdown voltage, V, (0 == disables emitter break-down) - Facteur d'avalanche B-E (0 = pas d'effet Zéner) - - - - Ideal reverse transit time, s - Temps de transit inverse idéal (s) - - - - Extrinsic BC diffusion capacitance, F - Capacité de diffusion extrinsèque B-C (F) - - - - Ideal forward transit time, s - Temps de transit idéal (s) - - - - Temperature coefficient of forward transit time - Coefficient thermique du temps de transit direct - - - - Excess transit time coefficient at base push-out - Temps de transit additionnel dû au push-out de base - - - - Smoothing parameter for Thcs - Paramètre de lissage de Thcs - - - - B-E zero-bias depletion capacitance, F/um^2 - Capacité de déplétion de la jonction B-E non polarisée (F.µm²) - - - - B-E junction exponential factor - Exposant de la jonction B-E - - - - B-E junction built-in potential, V - Valeur intrisèque du potentiel B-E (V) - - - - B-C zero-bias depletion capacitance, F/um^2 - Capacité de déplétion de la jonction B-C non polarisée (F.µm²) - - - - B-C junction exponential factor - Exposant de la jonction B-C - - - - B-C junction built-in potential, V - Potentiel intrinsèque de la jonction B-C (V) - - - - not used - Inutilisé - - - - Minimum B-C depletion capacitance (Vbc dependence), F/um^2 - Valeur minimale de la capacité de déplétion B-C (facteur de Vbc), en F.µm⁻² - - - - Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction) - Valeur du courant de collecteur pour lequel Cbc atteint Cmin, A.µm⁻² - - - - Fraction of Cmin, lower limit of BC capacitance (Ic dependence) - Fraction de Cmin, limite inférieure de la capacité BC (dépend de lc) - - - - Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out) - Seuil de déclanchement de l'expansion de base aux faibles tensions, Ω.µm² (0 = pas d'effet Kirk) - - - - Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out) - Seuil d'expansion de la base aux hautes tensions A.µm⁻² (0 = pas d'effet Kirk) - - - - Slope of Jk at high currents , Ohm*um^2 - Pente de Jk en fort courants, Ω.µm² - - - - Voltage shift of base push-out onset, V - Variation de la tension de seuil d'expansion de base (V) - - - - Collector resistance, Ohm/finger - Résistance de collecteur (Ω/doigt) - - - - Emitter resistance, Ohm/finger - Résistance d'émetteur (Ω/doigt) - - - - Extrinsic base resistance, Ohm/finger - Résistance extrinsèque de base (Ω/doigt) - - - - Inner Base ohmic resistance, Ohm/finger - Résistance de la base interne (Ω/doigt) - - - - Collector inductance, H - Inductance du collecteur (H) - - - - Emitter inductance, H - Inductance de l'émetteur (H) - - - - Base inductance, H - Inductance de la base (H) - - - - Extrinsic B-C capacitance, F - Capacité extrisèque de l'émetteur (F) - - - - Extrinsic base capacitance, F - Capacité extrisèque de la base (F) - - - - Extrinsic collector capacitance, F - Capacité extrisèque du collecteur (F) - - - - - Flicker-noise coefficient - Coefficient du bruit de scintillation - - - - - Flicker-noise exponent - Exposant du bruit de scintillation - - - - - Flicker-noise frequency exponent - Exposant fréquenciel du bruit de scintillation - - - - Burst noise coefficient - Coefficient du bruit de grenaille - - - - Burst noise exponent - Exposant du bruit de grenaille - - - - Burst noise corner frequency, Hz - Fréquence de coupure du bruit de grenaille (Hz) + + + + voltage of high level + niveau du 1 + + - Ambient temperature at which the parameters were determined - Température de mesure des paramètres - - - - FBH HBT - FBH HBT - - - - HICUM Level 0 v1.12 verilog device - Composant Verilog Hicum niveau 2 v2.1 {0 ?} {1.12 ?} - - + + + + + + + + + + + - - - - (Modified) saturation current - - - - - - - - Non-ideality coefficient of forward collector current - - - - - - - - Non-ideality coefficient of reverse collector current - - - - - - - - - - - - - - - - forward Early voltage (normalization volt.) - - - - - - - - forward d.c. high-injection roll-off current - - - - - - - - inverse d.c. high-injection roll-off current - - - - - - - - high-injection correction current - - - - - - - high-injection correction factor - - - - - - - - BE saturation current - - - - - - - - BE non-ideality factor - - - - - - - - BE recombination saturation current - - - - - - - - BE recombination non-ideality factor - - - - - - - - BC saturation current - - - - - - - - BC non-ideality factor - - - - - - - - Zero-bias BE depletion capacitance - - - - - - - - BE built-in voltage - - - - - - - - BE exponent factor - - - - - - - - Ratio of maximum to zero-bias value - + + + + + + + + + + + + + + + + + + Error + Erreur - - - - - low current transit time at Vbici=0 - + + Format Error: +Wrong line start! + Erreur de Format : +Début de ligne incorrect ! - - - - - Base width modulation contribution + + Format Error: +Unknown component! +%1 + +Do you make use of loadable components? - - - - - SCR width modulation contribution - + + Format Error: +Wrong 'component' line format! + Erreur de format : +Ligne « composant » incohérente ! - - - - - Storage time in neutral emitter - + + coplanar line + ligne coplanaire - - - - - Exponent factor for emitter transit time - + + + + + + + + + + + + name of substrate definition + Nom du modèle de substrat - - - - Saturation time at high current densities - - - - - - - - Smoothing factor for current dependence - + + + + + + + + width of the line + largeur de la ligne - - - - Storage time at inverse operation - + + + + width of a gap + largeur de l'espacement - - - - - Low-field collector resistance under emitter - + + + + + length of the line + longueur de la ligne - - - - - Voltage dividing ohmic and satur.region - + + + + + material at the backside of the substrate + métallisation inférieure du substrat - - - - - - - - Punch-through voltage - - - - - - - - Saturation voltage - + use approximation instead of precise equation + utiliser une heuristique à la place de l'équation exacte - - - - - Total zero-bias BC depletion capacitance - + + Coplanar Line + Ligne coplanaire - - - - - BC built-in voltage - + + ideal coupler + coupleur idéal - - - - - BC exponent factor - + + coupling factor + couplage - - - - Punch-through voltage of BC junction - - - - - - - - Zero-bias external BC depletion capacitance - - - - - - - - External BC built-in voltage - + phase shift of coupling path in degree + déphasage du couplage en degrés - - - - - External BC exponent factor - + + Coupler + Coupleur - - - - - Split factor = Cjci0/Cjc0 - + + coplanar gap + fente coplanaire - - - - - Internal base resistance at zero-bias - + + width of gap between the two lines + largeur de la fente entre les deux lignes - - - - - Geometry factor - + + Coplanar Gap + Fente coplanaire - - - - - - - - - - External base series resistance - Résistance de base additionnelle + + coplanar open + fin de ligne coplanaire - - - - - - - - - - Emitter series resistance - Résistance série d'émetteur + + width of gap at end of line + largeur de la fente à la fin de la ligne - - - - - - - - - - External collector series resistance - Résistance série externe de collecteur + + Coplanar Open + Fin de ligne coplanaire - - - - - - - - - - Substrate transistor transfer saturation current - Seuil de saturation du courant de transfert transistor/substrat + + coplanar short + court-circuit coplanaire - - - - - Substrate transistor transfer current non-ideality factor - + + Coplanar Short + Court-circuit coplanaire - - - - - SC saturation current - + + coplanar step + changement de largeur coplanaire - - - - - SC non-ideality factor - + + + + width of line 1 + largeur de la ligne 1 - - - - Zero-bias SC depletion capacitance - - - - - - - - SC built-in voltage - - - - - - - - External SC exponent factor - + + + width of line 2 + largeur de la ligne 2 - - - - SC punch-through voltage - + distance between ground planes + distance entre les plans de masse - - - - - Collector-base isolation (overlap) capacitance - + + Coplanar Step + Changement de largeur Coplanaire - - - - - Emitter-base oxide capacitance + + coupled transmission lines - - - - - Exponent factor + + characteristic impedance of even mode - - - - Prefactor + characteristic impedance of odd mode - - - - - M^(1-AF) - + + + + + electrical length of the line + longueur électrique - - - - flicker noise exponent factor + relative dielectric constant of even mode - - - - Bandgap-voltage + relative dielectric constant of odd mode - - - - - Effective emitter bandgap-voltage + + attenuation factor per length of even mode - - - - - Effective collector bandgap-voltage + + attenuation factor per length of odd mode - - - - - Effective substrate bandgap-voltage + + Coupled Transmission Line - - - - - Coefficient K1 in T-dependent bandgap equation - + + D flip flop with asynchron reset + Bascule D avec R asynchrone - - - - - Coefficient K2 in T-dependent bandgap equation - + + D-FlipFlop + Bascule D - - - - - Frist-order TC of tf0 - + + + dc simulation + Simulation du point de fonctionnement - - - - - Second-order TC of tf0 - + + + + + relative tolerance for convergence + erreur relative de convergence - - - - - - 1/K^2 - + + + + + absolute tolerance for currents + tolérance absolue pour les intensités - - - - - - - - Exponent coefficient in transfer current temperature dependence - + + + + absolute tolerance for voltages + tolérance absolue pour les tensions - - - - Exponent coefficient in BE junction current temperature dependence - + put operating points into dataset + inclure les points de fonctionnement dans les résultats - - - - - TC of epi-collector diffusivity - + + + + + maximum number of iterations until error + nombre maximum d'itérations - - - - Relative TC of satur.drift velocity - + save subcircuit nodes into dataset + enregistrer les nœuds du sous-circuit dans les résultats - - - - Relative TC of vces - + preferred convergence algorithm + Algorithme de convergence préféré - - - - TC of internal base resistance - + + + method for solving the circuit matrix + méthode d'inversion matricielle - - - - - TC of external base resistance - + + dc block + Découplage - - - - - TC of external collector resistance - + + dc Block + Découplage - - - - - TC of emitter resistances - + + dc feed + Arrivée continue - - - - TC of avalanche prefactor - + + dc Feed + Polarisation - - - - TC of avalanche exponential factor + + D flip flop with set and reset verilog device - - - - Flag for self-heating calculation + + + + cross coupled gate transfer function high scaling factor - - - - - - - - - Thermal resistance - Résistance thermique - - - - - - - - - - - K/W - - - - - - - - Ws/K + + + + cross coupled gate transfer function low scaling factor - - - - Temperature for which parameters are valid + + + + cross coupled gate delay - - - - - - - - - C + + D-FlipFlop w/ SR - - - - - Temperature change for particular transistor + + diac (bidirectional trigger diode) - - - - - - - - - K + + + (bidirectional) breakover voltage - - npn HICUM L0 v1.12 + + (bidirectional) breakover current - - pnp HICUM L0 v1.12 + + + + parasitic capacitance - - HICUM Level 2 v2.22 verilog device - Composant Verilog Hicum niveau 2 v2.1 {2 ?} {2.22 ?} - - - - - - - - GICCR constant - Constante GICCR - - - - - - - A^2s - + + + + + + emission coefficient + coeffcient d'émission - - - - - Zero-bias hole charge - Charge intrinsèque des trous - - - - - - - - - - - Coul + + + intrinsic junction resistance - - - - - - High-current correction for 2D and 3D effects - Correction courant fort pour les effets 2D et 3D + + Diac + - - - - - - Emitter minority charge weighting factor in HBTs - Coefficient de pondération des porteurs minoritaires des émetteurs HBTs + + + digital simulation + simulation numérique - - - - - - Collector minority charge weighting factor in HBTs - Coefficient de pondération des porteurs minoritaires des collecteurs HBTs + + type of simulation + type de simulation - - - - - B-E depletion charge weighting factor in HBTs - Coefficient de pondération de la ZCE base-émetteur des HBTs + duration of TimeList simulation + durée de la simulation TimeList - - - - - B-C depletion charge weighting factor in HBTs - Coefficient de pondération de la ZCE base-collecteur des HBTs + netlist format + format de la netlist - - - - - - Internal B-E saturation current - Courant de saturation base-émetteur + + + digital source + source numérique - - - - - - Internal B-E current ideality factor - Facteur d'idéalité du courant interne base-émetteur + + + number of the port + numéro du port - - - - - Internal B-E recombination saturation current - Seuil de saturation du courant de recombinaison B-E - - - - - - - - Internal B-E recombination current ideality factor - Facteur d'idéalité du courant interne de recombinaison B-E + initial output value + valeur de sortie initiale - - - - - Peripheral B-E saturation current - Seuil de saturation du courant périphérique B-E - - - - - - - - Peripheral B-E current ideality factor - + list of times for changing output value + liste d'instants pour changer la valeur de sortie - - - - - - Peripheral B-E recombination saturation current - Seuil de saturation du courant de recombinaison périphérique B-E + + diode + diode - - - - - - Peripheral B-E recombination current ideality factor - Facteur d'idéalité du courant de recombinaison périphérique B-E + + + + zero-bias junction capacitance + capacité de la jonction à polarisation nulle - - - - - Non-ideality factor for III-V HBTs - Facteur de non-idéalité des HBTs III-V + + + + + grading coefficient + coefficient de gradation - - - - Base current recombination time constant at B-C barrier for high forward injection - - - - - - - - - Internal B-C saturation current - Seuil de saturation du courant B-C + + + + junction potential + tension de jonction - - - - - - Internal B-C current ideality factor - Facteur d'idéalité du courant interne B-C + + linear capacitance + capacité proportionnelle - - - - - External B-C saturation current - Seuil de saturation du courant externe B-C - - - - - - - - External B-C current ideality factor - Facteur d'idéalité du courant externe B-E + recombination current parameter + paramètre de recombinaison en courant - - - - - B-E tunneling saturation current - Seuil de saturation du courant tunnel B-E - - - - - - - - Exponent factor for tunneling current - Exposant du courant tunnel + emission coefficient for Isr + coefficient d'émission pour Isr - - - - Specifies the base node connection for the tunneling current - + ohmic series resistance + résistance réelle série - - - - - Avalanche current factor - Facteur du courant d'avalanche - - - - - - - - Exponent factor for avalanche current - Exposant du courant d'avalanche + + + transit time + temps de transit - - - - - - Relative TC for FAVL - TC relatif pour FAVL + + high-injection knee current (0=infinity) + Courant de seuil de forte injection (0 = infini) - - - - - - Relative TC for QAVL - TC relatif pour QAVL + + + + reverse breakdown voltage + tension de claquage inverse - - - - - - Zero bias internal base resistance - Résistance de la base à polarisation nulle + + + + current at reverse breakdown voltage + courant à la tension de claquage inverse - - - - - - Factor for geometry dependence of emitter current crowding - Facteur contrôlant la dépendance géométrique de l'emcombrement des porteurs + + Bv linear temperature coefficient + coefficient linéaire de température de Bv - - - - - Correction factor for modulation by B-E and B-C space charge layer - Facteur de modulation des ZCE des jonctions B-E et B-C + Rs linear temperature coefficient + coefficient linéaire de température de Rs - - - - - Ratio of HF shunt to total internal capacitance (lateral NQS effect) - Rapport de la capacité HF latérale à la capacité globale (effet NQS) + Tt linear temperature coefficient + coefficient linéaire de température de Tt - - - - - Ration of internal to total minority charge - Rapport de la charge interne à la charge totale des porteurs minoritaires - - - - - - - - Forward ideality factor of substrate transfer current - Facteur d'idéalité direct du courant transistor/substrat + Tt quadratic temperature coefficient + Coefficient de température quadratique de Tt - - - - - C-S diode saturation current - Seuil de saturation de la diode C-S - - - - - - - - Ideality factor of C-S diode current - Facteur d'idéalité de courant dans la diode C-S + M linear temperature coefficient + Coefficient linéaire de température de M - - - - - Transit time for forward operation of substrate transistor - Temps de transit direct du transistor substrat - - - - - - - - Substrate series resistance - Résistance série du substrat + M quadratic temperature coefficient + Coefficient quadratique de température de M - - - - - - Substrate shunt capacitance - Capacité shunt du substrat + + + default area for diode + Surface par défaut de la diode - - - - - - Internal B-E zero-bias depletion capacitance - Capacité interne B-E à vide + + Diode + Diode - - - - - - Internal B-E built-in potential - Valeur intrisèque du potentiel B-E + + data voltage level shifter (digital to analogue) verilog device + - - - - - Internal B-E grading coefficient - Coefficient de gradation interne B-E - - - - - - - - Ratio of maximum to zero-bias value of internal B-E capacitance - Rapport de la valeur maximale de la capacité interne B-E à sa valeur à vide + + voltage level + - - - - - Peripheral B-E zero-bias depletion capacitance - Capacité périphérique B-E à vide - - - - - - - - Peripheral B-E built-in potential - Potentiel intrinsèque périphérique B-E - - - - - - - - Peripheral B-E grading coefficient - Coefficient de gradation périphérique B-E + + time delay + - - - - - - Ratio of maximum to zero-bias value of peripheral B-E capacitance - Rapport de la valeur maximale de la capacité périphérique B-E à sa valeur à vide + + D2A Level Shifter + - - - - - - Internal B-C zero-bias depletion capacitance - Capacité interne B-C à vide + + data voltage level shifter (analogue to digital) verilog device + + + + + + + + + + + - - - - - Internal B-C built-in potential - Valeur intrisèque du potentiel B-C interne - - - - - - - Internal B-C grading coefficient - Coefficient de gradation interne B-C + + + + + + + + + + + V + - - - - - - Internal B-C punch-through voltage - Tension de punch-through interne B-C + + A2D Level Shifter + - - - - - - External B-C zero-bias depletion capacitance - Capacité externe B-C à vide + + 2to4 demultiplexer verilog device + - - - - - - External B-C built-in potential - Valeur intrisèque du potentiel B-C externe + + 2to4 Demux + - - - - - - External B-C grading coefficient - Coefficient de gradation externe B-C + + 3to8 demultiplexer verilog device + - - - - - - External B-C punch-through voltage - Tension de punch-through externe B-C + + 3to8 Demux + - - - - - Partitioning factor of parasitic B-C cap + + 4to16 demultiplexer verilog device - - - - - Partitioning factor of parasitic B-E cap + + 4to16 Demux - - - - - - C-S zero-bias depletion capacitance - Capacité C-S à vide + + externally controlled voltage source + - - - - - - C-S built-in potential - Valeur intrisèque du potentiel C-S + + + voltage in Volts + tension en volts - - - - - - C-S grading coefficient - Coefficient de gradation C-S + + Externally Controlled Voltage Source + - - - - - - C-S punch-through voltage - Tension de punch-through C-S + + EPFL-EKV MOS 2.6 verilog device + - - - - - - Low current forward transit time at VBC=0V - Temps de transit direct en petits courants à Vbc = 0 V + + long = 1, short = 2 + - - - - - - Time constant for base and B-C space charge layer width modulation - Constante de temps de la modulation de l'épaisseur de la ZCE de base et B-C + + length parameter + + - - - - Time constant for modelling carrier jam at low VCE - Constante de temps modélisant l'embouteillage des porteurs aux faibles Vce - - + - - - - - Neutral emitter storage time - Temps de stockage d'émetteur neutre - - - - - - - Exponent factor for current dependence of neutral emitter storage time - Exposant de la dépendance en courant du temps de stockage d'émetteur neutre + + + + + m + - - - - - - Saturation time constant at high current densities - Constante de temps de la saturation aux fortes densités de courant + + Width parameter + - - - - - Smoothing factor for current dependence of base and collector transit time - Facteur de lissage de la dépendace en courant du temps de transit dans la base et le collecteur + parallel multiple device number + - - - - - Partitioning factor for base and collector portion - Facteur de partition base collecteur + series multiple device number + - - - - - Internal collector resistance at low electric field - Résistance interne du collecteur aux faibles champs - - - - - - - - Voltage separating ohmic and saturation velocity regime - Tension de basculement entre régime de vitesse ohmique et saturée + gate oxide capacitance per unit area + - - - - - - Internal C-E saturation voltage - Seuil de saturation interne C-E + + F/m**2 + - - - - - - Collector punch-through voltage - Tension de punch-through collecteur + + metallurgical junction depth + - - - - - Storage time for inverse operation - Temps de stockage en régime inverse + channel width correction + - - - - - Total parasitic B-E capacitance - Capacité parasite B-E totale + channel length correction + - - - - - Total parasitic B-C capacitance - Capacité parasite B-C totale + long channel threshold voltage + - - - - - Factor for additional delay time of minority charge - Délai additionnel des porteurs minoritaires - - - - - - - - Factor for additional delay time of transfer current - Délai additionnel du courant de transfert - - - - - - - Flag for turning on and off of vertical NQS effect + body effect parameter - - - - - - Flicker noise coefficient - Coefficient du bruit de scintillation - - - - - - - - Flicker noise exponent factor - Exposant du bruit de scintillation + + V**(1/2) + - - - - Flag for determining where to tag the flicker noise source + bulk Fermi potential - - - - - - Scaling factor for collector minority charge in direction of emitter width - Facteur d'échelle des porteurs minoritaires de collecteur dans le sens de la largeur d'émetteur + + + + transconductance parameter + transconductance - - - - - - Scaling factor for collector minority charge in direction of emitter length - Facteur d'échelle des porteurs minoritaires de collecteur dans le sens de la longueur d'émetteur + + + A/V**2 + - - - - - Bandgap voltage extrapolated to 0 K - Tension de gap extrapolée à 0 K + mobility reduction coefficient + + + - - - - - First order relative TC of parameter T0 - Dépendance thermique du premier ordre de T0 - - - - - - - Second order relative TC of parameter T0 - Dépendance thermique du second ordre de T0 - - - - - - - - Temperature exponent for RCI0 - Exposant thermique de RCI0 + + 1/V + - - - - - Relative TC of saturation drift velocity - Dépendance thermique relative de la vitesse de dérive à saturation + mobility coefficient + + - - - - - Relative TC of VCES - Dépedance thermique relative de Vces + + V/m + - - - - - - Temperature exponent of internal base resistance - Exposant thermique de la résistance interne de base + + + longitudinal critical field + - - - - - - Temperature exponent of external base resistance - Exposant thermique de la résistance externe de base + + depletion length coefficient + - - - - - Temperature exponent of external collector resistance - Exposant thermique de la résistance externe de collecteur + narrow-channel effect coefficient + - - - - - - Temperature exponent of emitter resistance - Exposant thermique de la résistance d'émetteur + + reverse short channel charge density + - - - - - - Temperature exponent of mobility in substrate transistor transit time - Exposant thermique de la mobilité dans l'expression du temps de transit du transistor substrat + + A*s/m**2 + - - - - Effective emitter bandgap voltage + characteristic length - - - - Effective collector bandgap voltage + threshold voltage temperature coefficient - - - - - Effective substrate bandgap voltage + + V/K - - - - - Coefficient K1 in T-dependent band-gap equation + + mobility temperature coefficient - - - - Coefficient K2 in T-dependent band-gap equation + Longitudinal critical field temperature exponent - - - - - Exponent coefficient in B-E junction current temperature dependence + + Ibb temperature coefficient - - - - - - Relative TC of forward current gain for V2.1 model - Dépendance thermique relative du β direct dans le modèle v. 2.1 + + 1/K + - - - - - Flag for turning on and off self-heating effect + + heavily doped diffusion length - - - - - J/W + + drain/source diffusion sheet resistance - - - - - Flag for compatibility with v2.1 model (0=v2.1) + + Ohm/square - - - - - Temperature at which parameters are specified - Température à laquelle les paramètres sont donnés + source contact resistance + + - - - - - Temperature change w.r.t. chip temperature for particular transistor - Dérive thermique d'un transistor individuel dû à l'échauffement global de la puce - - - - HICUM L2 v2.22 - Hicum L2 v. 2.22 {2 ?} - - - - HICUM Level 0 v1.2 verilog device - Composant Verilog Hicum niveau 2 v2.1 {0 ?} {1.2 ?} + + + + + + + + + + + Ohm + Ω - - - - reverse Early voltage (normalization volt.) + + drain contact resistance - - - - flag for turning on base related critical current + + gate to source overlap capacitance - - - - Smoothing factor for the d.c. injection width + + + + + F/m - - - - BE charge built-in voltage for d.c. transfer current + + gate to drain overlap capacitance - - - charge BE exponent factor for d.c. transfer current + gate to bulk overlap capacitance - - - - BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current + + first impact ionization coefficient - - - TC of iqf + + 1/m - - - - Exponent factor for temperature dependent thermal resistance + + second impact ionization coefficient - - npn HICUM L0 v1.2 + + saturation voltage factor for impact ionization - - pnp HICUM L0 v1.2 + + area related theshold voltage mismatch parameter - - HICUM Level 0 v1.2g verilog device + + V*m - - high-injection roll-off current + + area related gain mismatch parameter - - TC of iqf (bandgap coefficient of zero bias hole charge) + + area related body effect mismatch parameter - - TC of avalanche prefactor, identical to alfav of Hicum/L2 + + sqrt(V)*m + + + + + + + + + - TC of avalanche exponential factor, identical to alqav of Hicum/L2 + A - - Emitter part coefficient of the zero bias hole charge temperature variation + + + + + + + + F - - Collector part coefficient of the zero bias hole charge temperature variation + + + diode relative area - - Bandgap TC parameter of ver + + charge partition parameter - Bandgap TC parameter of vef - + + + + + + + parameter measurement temperature + température de mesure des paramètres - - Specific recombination current at the BC barrier for high forward injection + + + + + + + + Celsius - - npn HICUM L0 v1.2g + + EPFL-EKV NMOS 2.6 - pnp HICUM L0 v1.2g + EPFL-EKV PMOS 2.6 - - HICUM Level 0 v1.3 verilog device - Composant Verilog Hicum niveau 2 v2.1 {0 ?} {1.3 ?} + + equation defined device + composant défini par une équation - - Flag for using third order solution for transfer current - + + type of equations + type d'équations - - bias dependence for reverse Early voltage - + + number of branches + nombre de branches - - Flag for turning temperature dependence of tef0 on and off - + + + current equation + équation de courant - - TC of Reverse Early voltage - + + + charge equation + équation de charge - - TC of AVER - + + Equation Defined Device + Composant défini par une équation - - Bandgap difference between base and BE-junction - + + equation + équation - - Frist-order TC of iqfh - + + + + Equation + Équation - - Second-order TC of iqfh - + + put result into dataset + inclure le résultat - - npn HICUM L0 v1.3 + + externally driven transient simulation - - pnp HICUM L0 v1.3 - + + + integration method + méthode d'intégration - - HICUM Level 2 v2.1 verilog device - Composant Verilog Hicum niveau 2 v2.1 + + + order of integration method + ordre d'intégration - - Partitioning factor of parasitic B-C capacitance - Facteur de répartition de la capacité parasite B-C + + + initial step size in seconds + pas initial en secondes - - Noise factor for internal base resistance - Facteur de bruit de la résistance de base interne + + + minimum step size in seconds + pas minimum en secondes - - HICUM L2 v2.1 - Hicum L2 v. 2.1 + + + relative tolerance of local truncation error + tolérance relative de l'erreur d'arrondi - - HICUM Level 2 v2.23 verilog device - Composant Verilog Hicum niveau 2 v2.1 {2 ?} {2.23 ?} + + + absolute tolerance of local truncation error + tolérance absolue de l'erreur d'arrondi - - HICUM L2 v2.23 - Hicum L2 v. 2.23 {2 ?} + + + overestimation of local truncation error + borne supérieure de l'erreur d'arrondi - - HICUM Level 2 v2.24 verilog device - Composant Verilog Hicum niveau 2 v2.1 {2 ?} {2.24 ?} + + + relax time step raster + quantum de temps de relaxation - - HICUM L2 v2.24 - Hicum L2 v. 2.24 {2 ?} + + + perform an initial DC analysis + Effectue un calcul préliminaire du point de fonctionnement - - hicumL2V2p31n verilog device - + + + maximum step size in seconds + Intervalle maximal en secondes - - Weight factor for the low current minority charge + + External transient simulation - - Parameter describing the slope of hjEi(VBE) + + 1bit full adder verilog device - - Smoothing parameter for hjEi(VBE) at high voltage + + 1Bit FullAdder - - Time constant for modeling carrier jam at low VCE + + 2bit full adder verilog device - - Barrier voltage + + 2Bit FullAdder - - Normalization parameter + + gated D latch verilog device - - Smoothing parameter for barrier voltage + + Gated D-Latch - - fitting factor for critical current + + 4bit Gray to binary converter verilog device - - Flag for turning on and off of correlated noise implementation + + 4Bit Gray2Bin - - Emitter resistance flicker noise coefficient - + + ground (reference potential) + masse (potentiel de référence) - - Emitter resistance flicker noise exponent factor - + + Ground + Masse - - Bandgap difference between B and B-E junction used for hjEi0 and hf0 - + + gyrator (impedance inverter) + gyrateur (inverseur d'impédance) - - Temperature coefficient for ahjEi - + + gyrator ratio + rapport de gyration - - Temperature coefficient for hjEi0 - + + Gyrator + Gyrateur - - Temperature coefficient for Rth + + 1bit half adder verilog device - - First order relative TC of parameter Rth + + 1Bit HalfAdder - - HICUM L2 V2.31 - + + Harmonic balance simulation + Équilibrage harmonique + + + + number of harmonics + nombre d'harmoniques + + + + Harmonic balance + Équilibrage harmonique @@ -12090,7 +7793,7 @@ Ligne « composant » incohérente ! - + ERROR: No file name in SPICE component "%1". ERREUR : Aucune référence de fichier dans le composant Spice "%1". @@ -12513,11 +8216,15 @@ Ligne « composant » incohérente ! Source de tension contrôlée en courant - voltage controlled voltage source source de tension contrôlée en tension + + + voltage controlled resistor + + resistance gain @@ -12552,7 +8259,7 @@ Ligne « composant » incohérente ! - + ERROR: No file name in %1 component "%2". ERREUR : Aucun composant « %2 » dans le répertoire %1. @@ -12715,7 +8422,7 @@ Ligne « composant » incohérente ! - + invalid invalide @@ -12827,7 +8534,7 @@ Ligne « composant » incohérente ! - + Successfully exported @@ -12850,8 +8557,8 @@ Use PNG, JPEG or SVG graphics! - - + + verilog-a user devices @@ -12910,14 +8617,14 @@ Use PNG, JPEG or SVG graphics! - + diagrams - + paintings @@ -13035,16 +8742,16 @@ Set the Octave location on the application settings. - + - + untitled sans nom - + Format Error: 'Painting' field is not closed! @@ -13220,17 +8927,17 @@ Champ inconnu ! ERREUR : Ne peut charger le sous-circuit "%1". - + WARNING: Skipping library component "%1". AVERTISSEMENT : le composant « %1 » est ignoré. - - ERROR: Cannot load library component "%1". - ERREUR: Impossible de charger le composant "%1" depuis la bibliothèque. + + ERROR: "%1": Cannot load library component "%2" from "%3" + - + WARNING: Ignore simulation component in subcircuit "%1". ATTENTION : Ordre de simulation ignoré dans le sous-cricuit "%1". @@ -13240,7 +8947,7 @@ Champ inconnu ! - + ERROR: Only one digital simulation allowed. ERREUR : Une seule simulation numérique possible. @@ -13369,11 +9076,17 @@ a substrate with lower permittivity and larger height. Cannot save settings file ! + + + Quarter wave filters do not allow low-pass nor high-pass masks + + + QucsActiveFilter - + &File &Fichier @@ -13383,7 +9096,29 @@ a substrate with lower permittivity and larger height. &Finir - + + &View + &Visualiser + + + + &Console + + + + + Enables/disables the filter calculation console + + + + + Console + +Enables/disables the filter calculation console + + + + &Help &Aide @@ -13403,30 +9138,30 @@ a substrate with lower permittivity and larger height. À propos de Qt… - - + + Passband attenuation, Ap (dB) - + Stopband attenuation, As (dB) - - Cuttof frequency, Fc (Hz) + + Cutoff frequency, Fc (Hz) - - + + Stopband frequency, Fs (Hz) - + Passband ripple Rp(dB) @@ -13436,7 +9171,7 @@ a substrate with lower permittivity and larger height. - + Filter order @@ -13486,27 +9221,61 @@ a substrate with lower permittivity and larger height. - - Calculation console + + Low Pass - - Filter topology + + General filter amplitude-frequency response - - Filter type: - Type de filtre : + + + + Unable to implement filter with such parameters and topology +Change parameters and/or topology and try again! + + + + + + Filter calculation was successful + - LowPass + Filter calculation terminated with error! + + + + + Filter calculation terminated with error + + + + + Lower cutoff frequency, Fl (Hz) + + + + + Copyright (C) 2014, 2015 by + Copyright © 2005, 2006 {2014, 2015 ?} + + + + Filter topology + Filter type: + Type de filtre : + + + High Pass @@ -13532,62 +9301,45 @@ a substrate with lower permittivity and larger height. - + Cauer section - - General amplitude frequency response - - - - - Filter topology preview (one stage) - - - - + Filter parameters - + Transfer function and Topology - - General filter amplidure-frequency response - - - - + Filter topology preview - + Filter calculation console - + + + Ready. + Prêt. + + + Upper cutoff frequency of band-pass/band-stop filter is less than lower. Unable to implement such filter. Change parameters and try again. - - - - Unable to implement filter with such parameters and topology -Change parapeters and/or topology and try again! - - - - + Unable to use Cauer section for Chebyshev or Butterworth frequency response. Try to use another topology. @@ -13603,40 +9355,28 @@ frequency response. Try to use another topology. Function will be implemented in future version - - - -Filter calculation was sucessfull - - - - - -Filter calculation terminated with error - - Upper cutoff frequency, Fu (Hz) - - Lower cuttoff frequency, Fl (Hz) + + Transient bandwidth, TW (Hz) - - Transient bandwidth, TW (Hz) + + Error! - + Active filter design - + About... À propos… @@ -13648,12 +9388,7 @@ Active Filter synthesis program - - Copyright (C) 2014 by - Copyright © 2005, 2006 {2014 ?} - - - + About Qt Info Qt @@ -13661,7 +9396,7 @@ Active Filter synthesis program QucsApp - + Schematic Schéma @@ -13677,42 +9412,42 @@ Active Filter synthesis program - + VHDL Sources Sources VHDL - - + + Verilog Sources Sources Vérilog - - + + Verilog-A Sources - - + + Octave Scripts - + Spice Files - + Any File Tous les fichiers - + The schematic search path has been refreshed. @@ -13732,7 +9467,7 @@ Active Filter synthesis program Schémas - + New Nouveau @@ -13817,13 +9552,13 @@ Active Filter synthesis program - + - + @@ -13846,7 +9581,7 @@ Active Filter synthesis program Erreur - + Cannot open "%1". Impossible d'ouvrir "%1". @@ -13858,8 +9593,16 @@ Active Filter synthesis program La bibliothèque est illisible. - - + + + + + Search results + + + + + @@ -13878,13 +9621,18 @@ Active Filter synthesis program Info - + Default icon not found: %1.png - + + verilog-a user devices + + + + -port -port @@ -13895,14 +9643,14 @@ Active Filter synthesis program - + The document contains unsaved changes! Certaines modifications sont non sauvegardées ! - + Do you want to save the changes before copying? @@ -13913,13 +9661,13 @@ Active Filter synthesis program - + &Save &Enregistrer - + Copy file @@ -13953,31 +9701,31 @@ Active Filter synthesis program - + Warning Attention - + This will delete the file permanently! Continue ? Le fichier va être définitivement détruit ! Poursuivre ? - + No Non - + - + Yes Oui - + unknown inconnu @@ -14138,7 +9886,7 @@ Active Filter synthesis program - + @@ -14152,7 +9900,7 @@ Active Filter synthesis program Prêt. - + Creating new text editor... Création d'un nouvel éditeur de texte… @@ -14217,12 +9965,12 @@ Active Filter synthesis program - + Cancel Annuler - + Cannot overwrite an open document Ne peut écraser un document en cours d'utilisation @@ -14237,7 +9985,7 @@ Active Filter synthesis program Sauvegarde de tous les fichiers... - + Closing file... Fermeture... @@ -14261,10 +10009,6 @@ Active Filter synthesis program Open examples directory... - - OK - OK - Printing... @@ -16211,110 +11955,6 @@ Informations sur le toolkit Qt de Trolltech Warnings in last simulation! Press F5 La simulation a donné lieu à des avertissements ! Appuyez sur F5 - - About... - Infos… - - - Qucs Version - Version de Qucs - - - Quite Universal Circuit Simulator - Simulateur électronique quasi-universel - - - Copyright (C) - Copyright © - - - by Michael Margraf - par Michael Margraf - - - Simulator by Stefan Jahn - Simulateur écrit par Stefan Jahn - - - VHDL simulator 'FreeHDL' by Edwin Naroska and Marius Vollmer - Simulateur VHDL « FreeHDL » par Edwin Naroska et Marius Vollmer - - - Special thanks to Jens Flucke and Raimund Jacob - Remerciements particuliers à Jens Flucke et Raimund Jacob - - - Many thanks to Mike Brinson for correcting the VHDL output - Merci beaucoup à Mike Brinson pour la correction de la sortie VHDL - - - GUI improvements by Gopala Krishna A - Amélioration de l'IHM par Gopala Krishna A - - - Verilog-AMS interface by Helene Parruitte - Interface Vérilog AMS par Hélène Parruitte - - - Translations: - Traductions : - - - German by Stefan Jahn - Allemand par Stefan Jahn - - - Polish by Dariusz Pienkowski - Polonais par Dariusz Pienkowski - - - Romanian by Radu Circa - Roumain par Radu Circa - - - French by Vincent Habchi, F5RCS - Français par Vincent Habchi, F5RCS - - - Spanish by Jose L. Redrejo Rodriguez - Espagnol par Jose L. Redrejo Rodriguez - - - Japanese by Toyoyuki Ishikawa - Japonais par Toyoyuki Ishikawa - - - Italian by Giorgio Luparia and Claudio Girardi - Italien par Giorgio Luparia et Claudio Girardi - - - Hebrew by Dotan Nahum - Hébreu par Dotan Nahum - - - Swedish by Peter Landgren - Suédois par Peter Landgren - - - Turkish by Onur and Ozgur Cobanoglu - Turc par Onur et Ozgur Cobanoglu - - - Hungarian by Jozsef Bus - Hongrois par Jozsef Bus - - - Russian by Igor Gorbounov - Russe par Igor Gorbounov - - - Czech by Marek Straka - Tchèque par Marek Straka - - - Catalan by Antoni Subirats - Catalan par Antoni Subirats - QucsAttenuator @@ -16585,7 +12225,7 @@ Un petit éditeur sans prétention pour Qucs QucsFilter - + &File &Fichier @@ -16625,7 +12265,7 @@ Un petit éditeur sans prétention pour Qucs - + Filter type: Type de filtre : @@ -16661,29 +12301,29 @@ Un petit éditeur sans prétention pour Qucs - + Corner frequency: Fréquence de coupure : - + Stop frequency: Fréquence d'arrêt : - + Stop band frequency: Fréquence d'arrêt : - - + + Pass band ripple: Ondulation en bande passante : - + Stop band attenuation: Atténuation minimale en bande coupée : @@ -16753,19 +12393,19 @@ Application de synthèse de filtres - + Result: Résultat : - + Error Erreur - + Stop frequency must be greater than start frequency. La fréquence d'arrêt doit être plus grande que la fréquence de coupure. @@ -16922,17 +12562,22 @@ Affiche/Cache la table des matières À propos - + Component Selection Choix du composant - - Search... - Recherche… + + Search Lib Components + - + + Clear + + + + Component Composant @@ -16947,7 +12592,7 @@ Affiche/Cache la table des matières Afficher le modèle - + About... À propos… @@ -16958,6 +12603,12 @@ Affiche/Cache la table des matières Bibliothécaire de Qucs + + + Copyright (C) 2011-2015 Qucs Team + + + Copyright (C) 2005 by Michael Margraf @@ -16966,7 +12617,7 @@ Affiche/Cache la table des matières - + QucsLib Help Aide de QucsLib @@ -16986,14 +12637,17 @@ Affiche/Cache la table des matières Modèle - - Search result - Résultat de la recherche + + + + + Search results + - + - + @@ -17002,13 +12656,13 @@ Affiche/Cache la table des matières Erreur - + Cannot open "%1". Impossible d'ouvrir "%1". - + @@ -17016,21 +12670,6 @@ Affiche/Cache la table des matières Library is corrupt. La bibliothèque est illisible. - - - Search Library Component - Chercher un composant des bibliothèques - - - - Result - Résultat - - - - No appropriate component found. - Aucun composant correspondant trouvé. - QucsSettingsDialog @@ -18046,7 +13685,7 @@ Modifie le symbole pour ce schéma - + Error Erreur @@ -18064,7 +13703,7 @@ Set the admsXml location on the application settings. - + ERROR: Cannot create library file "%s". ERREUR : impossible de créer la bibliothèque "%s". @@ -18073,83 +13712,46 @@ Set the admsXml location on the application settings. SearchDialog - - - - Dialog - - - - Text to search for Rechercher - - - - Text to replace with Remplacer avec - - - - Ask before replacing Valider les remplacements - - - - Case sensitive Dinstinguer la chasse - - - - Whole words only Uniquement le(s) mot(s) entier(s) - - - - Search backwards Recherche arrière - - - - Next - - - - - Close Fermer @@ -18163,31 +13765,6 @@ Set the admsXml location on the application settings. Search Text Rechercher - - - The search result contains all components whose -name contains the search string. All libraries -are included in the search. - Le résultat de la recherche donne tous les composants dont -le nom inclut le texte recherchée. La recherche est -étendue à toutes les bibliothèques. - - - - Search string: - Texte à chercher : - - - - Search - Rechercher - - - - - Search result - Résultat de la recherche - SettingsDialog @@ -18469,12 +14046,6 @@ le nom inclut le texte recherchée. La recherche est Simulation aborted by the user! - - Errors: -------- - Erreurs : --------- - SpiceDialog @@ -18637,7 +14208,7 @@ le nom inclut le texte recherchée. La recherche est SymbolWidget - + Symbol: Symbole : @@ -18646,6 +14217,13 @@ le nom inclut le texte recherchée. La recherche est ! Drag n'Drop me ! ! Cliquez-déposez moi ! + + + Warning: Symbol '%1' missing in Qucs Library. +Drag and Drop may still work. +Please contact the developers. + + TextDoc diff --git a/qucs/translations/qucs_he.ts b/qucs/translations/qucs_he.ts index 8093a329e3..9df6cbe150 100644 --- a/qucs/translations/qucs_he.ts +++ b/qucs/translations/qucs_he.ts @@ -3526,62 +3526,6 @@ Resistor color code computation program - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - @@ -3737,10 +3681,6 @@ Resistor color code computation program - - - - polarity @@ -3945,10 +3885,6 @@ Resistor color code computation program - - - - @@ -4089,5709 +4025,1480 @@ Resistor color code computation program - - bsim3v34nMOS verilog device + + + + + + + + + + + simulation temperature + + + capacitor + קבל + + capacitance in Farad + קיבוליות בפאראד + + + initial voltage for transient simulation + + + + + + + + + schematic symbol + סמל סכמטי + + + + Capacitor + קבל + + + + current controlled current source + זרם מקור נשלט זרם + + + + + + forward transfer factor + גורם מעבר קדמי (FORWARD TRANSFER) + + + + + + + + + + + + + + + delay time + זמן השהיה + + + + Current Controlled Current Source + זרם מקור נשלט זרם + + + + current controlled voltage source + מתח מקור נשלט זרם + + + + Current Controlled Voltage Source + מתח מקור נשלט זרם + + + + circulator + מחוגג (CIRCULATOR) + + + + reference impedance of port 1 + עכבת יחוס של ממשק 1 + + + reference impedance of port 2 + עכבת יחוס של ממשק 2 + + + reference impedance of port 3 + עכבת יחוס של ממשק 3 + + + + Circulator + מחוגג (CIRCULATOR) + + + + coaxial transmission line + + + + + + relative permittivity of dielectric + + + + + + specific resistance of conductor + + + + + + relative permeability of conductor + + + + inner diameter of shield + + + + diameter of inner conductor + + + + + mechanical length of the line + + + + + + + loss tangent + משיק הפסד + + + + Coaxial Line + + + + + 1bit comparator verilog device + + + + + 1Bit Comparator + + + + + 2bit comparator verilog device + + + + + 2Bit Comparator + + + + + 4bit comparator verilog device + + + + + 4Bit Comparator + + + + + number of input ports + + + - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - simulation temperature - - - - - bsim3v34nMOS - - - - - bsim3v34pMOS verilog device - - - - - bsim3v34pMOS - - - - - bsim4v30nMOS verilog device - - - - - bsim4v30nMOS - - - - - bsim4v30pMOS verilog device - - - - - bsim4v30pMOS - - - - - capacitor - קבל - - - - capacitance in Farad - קיבוליות בפאראד - - - - initial voltage for transient simulation - - - - - - - - - - schematic symbol - סמל סכמטי - - - - Capacitor - קבל - - - - current controlled current source - זרם מקור נשלט זרם - - - - - - forward transfer factor - גורם מעבר קדמי (FORWARD TRANSFER) - - - - - - - - - - - - - - - delay time - זמן השהיה - - - - Current Controlled Current Source - זרם מקור נשלט זרם - - - - current controlled voltage source - מתח מקור נשלט זרם - - - - Current Controlled Voltage Source - מתח מקור נשלט זרם - - - - circulator - מחוגג (CIRCULATOR) - - - - reference impedance of port 1 - עכבת יחוס של ממשק 1 - - - - reference impedance of port 2 - עכבת יחוס של ממשק 2 - - - - reference impedance of port 3 - עכבת יחוס של ממשק 3 - - - - Circulator - מחוגג (CIRCULATOR) - - - - coaxial transmission line - - - - - - relative permittivity of dielectric - - - - - - - specific resistance of conductor - - - - - - - relative permeability of conductor - - - - - inner diameter of shield - - - - - diameter of inner conductor - - - - - - mechanical length of the line - - - - - - - - loss tangent - משיק הפסד - - - - Coaxial Line - - - - - 1bit comparator verilog device - - - - - 1Bit Comparator - - - - - 2bit comparator verilog device - - - - - 2Bit Comparator - - - - - 4bit comparator verilog device - - - - - 4Bit Comparator - - - - - number of input ports - - - - - - - - voltage of high level - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Error - שגיאה - - - - Format Error: -Wrong line start! - שגיאת פורמט: -התחלת שורה שגויה! - - - - Format Error: -Unknown component! -%1 - -Do you make use of loadable components? - - - - - Format Error: -Wrong 'component' line format! - שגיאת פורמט: -תבנית שורה ל'רכיב' שגויה! - - - - coplanar line - קו דו מישורי (COPLANAR) - - - - - - - - - - - - - - name of substrate definition - שם הגדרת מצע (SUBSTRATE) - - - - - - - - - - - width of the line - רוחב השורה - - - - - - - width of a gap - רוחב הפער - - - - - - - length of the line - אורך השורה - - - - - - - material at the backside of the substrate - חומר בצד האחורי של המצע (SUBSTRATE) - - - - use approximation instead of precise equation - - - - - Coplanar Line - קו דו מישורי (COPLANAR) - - - - ideal coupler - - - - - coupling factor - - - - - phase shift of coupling path in degree - - - - - Coupler - - - - - coplanar gap - - - - - width of gap between the two lines - - - - - Coplanar Gap - - - - - coplanar open - - - - - width of gap at end of line - - - - - Coplanar Open - - - - - coplanar short - - - - - Coplanar Short - - - - - coplanar step - - - - - - - width of line 1 - רוחב קו 1 - - - - - - width of line 2 - רוחב קו 2 - - - - distance between ground planes - - - - - Coplanar Step - - - - - coupled transmission lines - - - - - characteristic impedance of even mode - - - - - characteristic impedance of odd mode - - - - - - - - electrical length of the line - אורך חשמלי של הקו - - - - relative dielectric constant of even mode - - - - - relative dielectric constant of odd mode - - - - - attenuation factor per length of even mode - - - - - attenuation factor per length of odd mode - - - - - Coupled Transmission Line - - - - - D flip flop with asynchron reset - - - - - D-FlipFlop - - - - - - dc simulation - סימולצית זרם ישר - - - - - - - relative tolerance for convergence - טולרנס יחסי להתכנסות - - - - - - - absolute tolerance for currents - טולרנס אבסולוטי לזרמים - - - - - - - absolute tolerance for voltages - טולרנס אבסולוטי למתחים - - - - put operating points into dataset - הכנס נקודות פעוולה לקומץ המידע - - - - - - - maximum number of iterations until error - מספר חזרות מקסימלי עד לשגיאה - - - - save subcircuit nodes into dataset - שמור צמתי תת-מעגל לתוך קומץ המידע - - - - preferred convergence algorithm - אלגוריתם התכנסות מועדף - - - - - - method for solving the circuit matrix - - - - - dc block - בלוק זרם ישר - - - - dc Block - בלוק זרם ישר - - - - dc feed - הזנת זרם ישר - - - - dc Feed - הזנת זרם ישר - - - - D flip flop with set and reset verilog device - - - - - - - - cross coupled gate transfer function high scaling factor - - - - - - - - cross coupled gate transfer function low scaling factor - - - - - - - - cross coupled gate delay - - - - - D-FlipFlop w/ SR - - - - - diac (bidirectional trigger diode) - - - - - - (bidirectional) breakover voltage - - - - - (bidirectional) breakover current - - - - - - - parasitic capacitance - - - - - - - - - emission coefficient - מקדם פליטה (EMISSION) - - - - - - intrinsic junction resistance - - - - - Diac - - - - - - digital simulation - - - - - type of simulation - - - - - duration of TimeList simulation - - - - - netlist format - - - - - - digital source - - - - - - number of the port - מספר הפורט - - - - initial output value - - - - - list of times for changing output value - - - - - diode - דיודה - - - - - - zero-bias junction capacitance - קיבוליות צומת מתח-שיחוד-אפס (ZERO-BIAS) - - - - - - - - grading coefficient - מקדם מדורג (GRADING) - - - - - - - junction potential - פוטנציאל צומת - - - - linear capacitance - קיבוליות לינארית - - - - recombination current parameter - פרמטר זרם ריקומבינציה - - - - emission coefficient for Isr - מקדם פליטה (EMISSION) ל Isr - - - - ohmic series resistance - התנגדות סדרה אוהמית - - - - - - transit time - זמן מעבר - - - - high-injection knee current (0=infinity) - - - - - - - reverse breakdown voltage - - - - - - - current at reverse breakdown voltage - - - - - Bv linear temperature coefficient - - - - - Rs linear temperature coefficient - - - - - Tt linear temperature coefficient - - - - - Tt quadratic temperature coefficient - - - - - M linear temperature coefficient - - - - - M quadratic temperature coefficient - - - - - - default area for diode - - - - - Diode - דיודה - - - - data voltage level shifter (digital to analogue) verilog device - - - - - - voltage level - - - - - - time delay - - - - - D2A Level Shifter - - - - - data voltage level shifter (analogue to digital) verilog device - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - V - - - - - A2D Level Shifter - - - - - 2to4 demultiplexer verilog device - - - - - 2to4 Demux - - - - - 3to8 demultiplexer verilog device - - - - - 3to8 Demux - - - - - 4to16 demultiplexer verilog device - - - - - 4to16 Demux - - - - - externally controlled voltage source - - - - - - voltage in Volts - וולטים בוולט - - - - Externally Controlled Voltage Source - - - - - EPFL-EKV MOS 2.6 verilog device - - - - - long = 1, short = 2 - - - - - length parameter - - - - - - - - - - - - - m - - - - - Width parameter - - - - - parallel multiple device number - - - - - series multiple device number - - - - - gate oxide capacitance per unit area - - - - - F/m**2 - - - - - metallurgical junction depth - - - - - channel width correction - - - - - channel length correction - - - - - long channel threshold voltage - - - - - body effect parameter - - - - - V**(1/2) - - - - - bulk Fermi potential - - - - - - - transconductance parameter - פרמטר מוליכות-על - - - - - A/V**2 - - - - - mobility reduction coefficient - - - - - - - - - - - - - 1/V - - - - - mobility coefficient - - - - - - - V/m - - - - - - longitudinal critical field - - - - - depletion length coefficient - - - - - narrow-channel effect coefficient - - - - - reverse short channel charge density - - - - - A*s/m**2 - - - - - characteristic length - - - - - threshold voltage temperature coefficient - - - - - - - - - - - - - V/K - - - - - mobility temperature coefficient - - - - - Longitudinal critical field temperature exponent - - - - - Ibb temperature coefficient - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1/K - - - - - heavily doped diffusion length - - - - - drain/source diffusion sheet resistance - - - - - Ohm/square - - - - - source contact resistance - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Ohm - - - - - drain contact resistance - - - - - gate to source overlap capacitance - - - - - - - - F/m - - - - - gate to drain overlap capacitance - - - - - gate to bulk overlap capacitance - - - - - first impact ionization coefficient - - - - - 1/m - - - - - second impact ionization coefficient - - - - - saturation voltage factor for impact ionization - - - - - area related theshold voltage mismatch parameter - - - - - V*m - - - - - area related gain mismatch parameter - - - - - area related body effect mismatch parameter - - - - - sqrt(V)*m - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - F - - - - - - diode relative area - - - - - charge partition parameter - - - - - - - - - - - parameter measurement temperature - - - - - - - - - - - Celsius - - - - - EPFL-EKV NMOS 2.6 - - - - - EPFL-EKV PMOS 2.6 - - - - - equation defined device - - - - - type of equations - - - - - number of branches - - - - - - current equation - - - - - - charge equation - - - - - Equation Defined Device - - - - - equation - משוואה - - - - - - Equation - משוואה - - - - put result into dataset - הכנס תוצאה לקומץ מידע - - - - externally driven transient simulation - - - - - - integration method - שיטת אינטגרציה - - - - - order of integration method - סדר שיטת האינטגרציה - - - - - initial step size in seconds - גודל צעד התחלתי בשניות - - - - - minimum step size in seconds - גודל צעד מינימלי בשניות - - - - - relative tolerance of local truncation error - טולרנס יחסי לשגיאת עיגול מקומית - - - - - absolute tolerance of local truncation error - טולרנס אבסולוטי לשגיאת עיגול מקומית - - - - - overestimation of local truncation error - הערכה מופרזת לשגיאת עיגול מקומית - - - - - relax time step raster - - - - - - perform an initial DC analysis - - - - - - maximum step size in seconds - - - - - External transient simulation - - - - - 1bit full adder verilog device - - - - - 1Bit FullAdder - - - - - 2bit full adder verilog device - - - - - 2Bit FullAdder - - - - - gated D latch verilog device - - - - - Gated D-Latch - - - - - 4bit Gray to binary converter verilog device - - - - - 4Bit Gray2Bin - - - - - ground (reference potential) - אדמה (פוטנציאל יחוס) - - - - Ground - אדמה - - - - gyrator (impedance inverter) - גירטור (מסובב) (הופך עכבה) - - - - gyrator ratio - יחס גירטור - - - - Gyrator - גירטור - - - - 1bit half adder verilog device - - - - - 1Bit HalfAdder - - - - - Harmonic balance simulation - סימולצית איזון הרמוני - - - - number of harmonics - מספר הרמוניות - - - - Harmonic balance - איזון הרמוני - - - - HBT model by Ferdinand-Braun-Institut (FBH), Berlin - - - - - - - - Ignored - - - - - Device operating temperature, Celsius - - - - - Thermal resistance, K/W - - - - - - - - - - - - - - Thermal capacitance - - - - - Scaling factor, number of emitter fingers - - - - - Length of emitter finger, m - - - - - Width of emitter finger, m - - - - - Forward saturation current density, A/um^2 - - - - - Forward current emission coefficient - - - - - Forward thermal activation energy, V, (0 == disables temperature dependence) - - - - - B-E leakage saturation current density, A/um^2 - - - - - B-E leakage emission coefficient - - - - - Limiting resistor of B-E leakage diode, Ohm - - - - - B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - 2nd B-E leakage saturation current density, A/um^2 - - - - - 2nd B-E leakage emission coefficient - - - - - 2nd Limiting resistor of B-E leakage diode, Ohm - - - - - 2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Reverse saturation current density, A/um^2 - - - - - Reverse current emission coefficient - - - - - Reverse thermal activation energy, V, (0 == disables temperature dependence) - - - - - Fraction of Cjc that goes to internal base node - - - - - B-C leakage saturation current density, A/um^2 (0. switches off diode) - - - - - B-C leakage emission coefficient (0. switches off diode) - - - - - Limiting resistor of B-C leakage diode, Ohm - - - - - B-C leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Ideal forward beta - - - - - Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence) - - - - - Ideal reverse beta - - - - - Forward Early voltage, V, (0 == disables Early Effect) - - - - - Reverse Early voltage, V, (0 == disables Early Effect) - - - - - Forward high-injection knee current, A, (0 == disables Webster Effect) - - - - - Reverse high-injection knee current, A, (0 == disables Webster Effect) - - - - - C-E breakdown exponent, (0 == disables collector break-down) - - - - - C-E breakdown voltage, V, (0 == disables collector break-down) - - - - - C-E breakdown factor, (0 == disables collector break-down) - - - - - B-E breakdown voltage, V, (0 == disables emitter break-down) - - - - - Ideal reverse transit time, s - - - - - Extrinsic BC diffusion capacitance, F - - - - - Ideal forward transit time, s - - - - - Temperature coefficient of forward transit time - - - - - Excess transit time coefficient at base push-out - - - - - Smoothing parameter for Thcs - - - - - B-E zero-bias depletion capacitance, F/um^2 - - - - - B-E junction exponential factor - - - - - B-E junction built-in potential, V - - - - - B-C zero-bias depletion capacitance, F/um^2 - - - - - B-C junction exponential factor - - - - - B-C junction built-in potential, V - - - - - not used - - - - - Minimum B-C depletion capacitance (Vbc dependence), F/um^2 - - - - - Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction) - - - - - Fraction of Cmin, lower limit of BC capacitance (Ic dependence) - - - - - Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out) - - - - - Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out) - - - - - Slope of Jk at high currents , Ohm*um^2 - - - - - Voltage shift of base push-out onset, V - - - - - Collector resistance, Ohm/finger - - - - - Emitter resistance, Ohm/finger - - - - - Extrinsic base resistance, Ohm/finger - - - - - Inner Base ohmic resistance, Ohm/finger - - - - - Collector inductance, H - - - - - Emitter inductance, H - - - - - Base inductance, H - - - - - Extrinsic B-C capacitance, F - - - - - Extrinsic base capacitance, F - - - - - Extrinsic collector capacitance, F - - - - - - Flicker-noise coefficient - - - - - - Flicker-noise exponent - - - - - - Flicker-noise frequency exponent - - - - - Burst noise coefficient - - - - - Burst noise exponent - - - - - Burst noise corner frequency, Hz + + + + voltage of high level + + - Ambient temperature at which the parameters were determined - - - - - FBH HBT - - - - - HICUM Level 0 v1.12 verilog device - - - + + + + + + + + + + + - - - - (Modified) saturation current - - - - - - - - Non-ideality coefficient of forward collector current - - - - - - - - Non-ideality coefficient of reverse collector current - - - - - - - - - - - - - - - - forward Early voltage (normalization volt.) - - - - - - - - forward d.c. high-injection roll-off current - - - - - - - - inverse d.c. high-injection roll-off current - - - - - - - - high-injection correction current - - - - - - - high-injection correction factor - - - - - - - - BE saturation current - - - - - - - - BE non-ideality factor - - - - - - - - BE recombination saturation current - - - - - - - - BE recombination non-ideality factor - - - - - - - - BC saturation current - - - - - - - - BC non-ideality factor - - - - - - - - Zero-bias BE depletion capacitance - - - - - - - - BE built-in voltage - - - - - - - - BE exponent factor - - - - - - - - Ratio of maximum to zero-bias value - - - - - - - - low current transit time at Vbici=0 - - - - - - - - Base width modulation contribution - - - - - - - - SCR width modulation contribution - - - - - - - - Storage time in neutral emitter - - - - - - - - Exponent factor for emitter transit time - - - - - - - - Saturation time at high current densities - - - - - - - - Smoothing factor for current dependence - - - - - - - - Storage time at inverse operation - - - - - - - - Low-field collector resistance under emitter - - - - - - - - Voltage dividing ohmic and satur.region - - - - - - - - - - - - Punch-through voltage - - - - - - - - Saturation voltage - - - - - - - - Total zero-bias BC depletion capacitance - - - - - - - - BC built-in voltage - - - - - - - - BC exponent factor - - - - - - - - Punch-through voltage of BC junction - - - - - - - - Zero-bias external BC depletion capacitance - - - - - - - - External BC built-in voltage - - - - - - - - External BC exponent factor - - - + - - - - Split factor = Cjci0/Cjc0 - - - - - - - - Internal base resistance at zero-bias - - - - - - - - Geometry factor - - - - - - - - - - - - - External base series resistance - - - - - - - - - - - - - Emitter series resistance - + + + + + + + + + + + + + + + + Error + שגיאה - - - - - - - - - - External collector series resistance - + + Format Error: +Wrong line start! + שגיאת פורמט: +התחלת שורה שגויה! - - - - - - - - - - Substrate transistor transfer saturation current + + Format Error: +Unknown component! +%1 + +Do you make use of loadable components? - - - - - Substrate transistor transfer current non-ideality factor - + + Format Error: +Wrong 'component' line format! + שגיאת פורמט: +תבנית שורה ל'רכיב' שגויה! - - - - - SC saturation current - + + coplanar line + קו דו מישורי (COPLANAR) - - - - - SC non-ideality factor - + + + + + + + + + + + + name of substrate definition + שם הגדרת מצע (SUBSTRATE) - - - - Zero-bias SC depletion capacitance - + + + + + + + + width of the line + רוחב השורה - - - - - SC built-in voltage - + + + + + width of a gap + רוחב הפער - - - - - External SC exponent factor - + + + + + length of the line + אורך השורה - - - - SC punch-through voltage - + + + + material at the backside of the substrate + חומר בצד האחורי של המצע (SUBSTRATE) - - - - Collector-base isolation (overlap) capacitance + use approximation instead of precise equation - - - - - Emitter-base oxide capacitance - + + Coplanar Line + קו דו מישורי (COPLANAR) - - - - - Exponent factor + + ideal coupler - - - - - Prefactor + + coupling factor - - - - - M^(1-AF) + + phase shift of coupling path in degree - - - - - flicker noise exponent factor + + Coupler - - - - - Bandgap-voltage + + coplanar gap - - - - - Effective emitter bandgap-voltage + + width of gap between the two lines - - - - - Effective collector bandgap-voltage + + Coplanar Gap - - - - - Effective substrate bandgap-voltage + + coplanar open - - - - - Coefficient K1 in T-dependent bandgap equation + + width of gap at end of line - - - - - Coefficient K2 in T-dependent bandgap equation + + Coplanar Open - - - - - Frist-order TC of tf0 + + coplanar short - - - - - Second-order TC of tf0 + + Coplanar Short - - - - - - 1/K^2 + + coplanar step - - - - - - - - - Exponent coefficient in transfer current temperature dependence - + + + + width of line 1 + רוחב קו 1 - - - - Exponent coefficient in BE junction current temperature dependence - + + + width of line 2 + רוחב קו 2 - - - - TC of epi-collector diffusivity + distance between ground planes - - - - - Relative TC of satur.drift velocity + + Coplanar Step - - - - - Relative TC of vces + + coupled transmission lines - - - - - TC of internal base resistance + + characteristic impedance of even mode - - - - TC of external base resistance + characteristic impedance of odd mode - - - - TC of external collector resistance - + + + + electrical length of the line + אורך חשמלי של הקו - - - - TC of emitter resistances + relative dielectric constant of even mode - - - TC of avalanche prefactor + relative dielectric constant of odd mode - - - - TC of avalanche exponential factor + + attenuation factor per length of even mode - - - - - Flag for self-heating calculation + + attenuation factor per length of odd mode - - - - - - - - - - Thermal resistance + + Coupled Transmission Line - - - - - - - - - K/W + + D flip flop with asynchron reset - - - - - Ws/K + + D-FlipFlop - - - - - Temperature for which parameters are valid - + + + dc simulation + סימולצית זרם ישר - - - - - - - - - C - + + + + + relative tolerance for convergence + טולרנס יחסי להתכנסות - - - - Temperature change for particular transistor - + + + + absolute tolerance for currents + טולרנס אבסולוטי לזרמים - - - - - - - - - K - + + + + + absolute tolerance for voltages + טולרנס אבסולוטי למתחים - - npn HICUM L0 v1.12 - + + put operating points into dataset + הכנס נקודות פעוולה לקומץ המידע - - pnp HICUM L0 v1.12 - + + + + + maximum number of iterations until error + מספר חזרות מקסימלי עד לשגיאה - - HICUM Level 2 v2.22 verilog device - + + save subcircuit nodes into dataset + שמור צמתי תת-מעגל לתוך קומץ המידע - - - - - GICCR constant - + preferred convergence algorithm + אלגוריתם התכנסות מועדף - - - - - A^2s + + + + method for solving the circuit matrix - - - - - - Zero-bias hole charge - + + dc block + בלוק זרם ישר - - - - - - - - - Coul - + + dc Block + בלוק זרם ישר - - - - - - High-current correction for 2D and 3D effects - + + dc feed + הזנת זרם ישר - - - - - - Emitter minority charge weighting factor in HBTs - + + dc Feed + הזנת זרם ישר - - - - - - Collector minority charge weighting factor in HBTs + + D flip flop with set and reset verilog device - - - - - - B-E depletion charge weighting factor in HBTs + + + + + cross coupled gate transfer function high scaling factor - - - - - B-C depletion charge weighting factor in HBTs + + + + cross coupled gate transfer function low scaling factor - - - - - Internal B-E saturation current + + + + cross coupled gate delay - - - - - - Internal B-E current ideality factor + + D-FlipFlop w/ SR - - - - - - Internal B-E recombination saturation current + + diac (bidirectional trigger diode) - - - - - - Internal B-E recombination current ideality factor + + + (bidirectional) breakover voltage - - - - - Peripheral B-E saturation current - - - - - - - - - Peripheral B-E current ideality factor + (bidirectional) breakover current - - - - - Peripheral B-E recombination saturation current + + + parasitic capacitance - - - - - - Peripheral B-E recombination current ideality factor - + + + + + + emission coefficient + מקדם פליטה (EMISSION) - - - - - Non-ideality factor for III-V HBTs + + + intrinsic junction resistance - - - - - Base current recombination time constant at B-C barrier for high forward injection + + Diac - - - - - - Internal B-C saturation current + + + digital simulation - - - - - - Internal B-C current ideality factor + + type of simulation - - - - - External B-C saturation current + duration of TimeList simulation - - - - - - External B-C current ideality factor + + netlist format - - - - - - B-E tunneling saturation current + + + digital source - - - - - - Exponent factor for tunneling current - + + + number of the port + מספר הפורט - - - - Specifies the base node connection for the tunneling current + initial output value - - - - - Avalanche current factor + list of times for changing output value - - - - - - Exponent factor for avalanche current - + + diode + דיודה - - - - - - Relative TC for FAVL - + + + + zero-bias junction capacitance + קיבוליות צומת מתח-שיחוד-אפס (ZERO-BIAS) - - - - - - Relative TC for QAVL - + + + + + + grading coefficient + מקדם מדורג (GRADING) - - - - - - Zero bias internal base resistance - + + + + + junction potential + פוטנציאל צומת - - - - - - Factor for geometry dependence of emitter current crowding - + + linear capacitance + קיבוליות לינארית - - - - - Correction factor for modulation by B-E and B-C space charge layer - + recombination current parameter + פרמטר זרם ריקומבינציה - - - - - Ratio of HF shunt to total internal capacitance (lateral NQS effect) - + emission coefficient for Isr + מקדם פליטה (EMISSION) ל Isr - - - - - Ration of internal to total minority charge - + ohmic series resistance + התנגדות סדרה אוהמית - - - - - - Forward ideality factor of substrate transfer current - + + + + transit time + זמן מעבר - - - - - C-S diode saturation current + high-injection knee current (0=infinity) - - - - - - Ideality factor of C-S diode current + + + + reverse breakdown voltage - - - - - Transit time for forward operation of substrate transistor + + + current at reverse breakdown voltage - - - - - - Substrate series resistance + + Bv linear temperature coefficient - - - - - - Substrate shunt capacitance + + Rs linear temperature coefficient - - - - - - Internal B-E zero-bias depletion capacitance + + Tt linear temperature coefficient - - - - - - Internal B-E built-in potential + + Tt quadratic temperature coefficient - - - - - - Internal B-E grading coefficient + + M linear temperature coefficient - - - - - Ratio of maximum to zero-bias value of internal B-E capacitance + M quadratic temperature coefficient - - - - - - Peripheral B-E zero-bias depletion capacitance + + + default area for diode - - - - - - Peripheral B-E built-in potential + + Diode + דיודה + + + + data voltage level shifter (digital to analogue) verilog device - - - - - Peripheral B-E grading coefficient + + voltage level - - - - - Ratio of maximum to zero-bias value of peripheral B-E capacitance + + time delay - - - - - - Internal B-C zero-bias depletion capacitance + + D2A Level Shifter - - - - - - Internal B-C built-in potential + + data voltage level shifter (analogue to digital) verilog device + + + + + + + + + + + + + - - - - - Internal B-C grading coefficient + + + + + + + + + V - - - - - - Internal B-C punch-through voltage + + A2D Level Shifter - - - - - - External B-C zero-bias depletion capacitance + + 2to4 demultiplexer verilog device - - - - - - External B-C built-in potential + + 2to4 Demux - - - - - - External B-C grading coefficient + + 3to8 demultiplexer verilog device - - - - - - External B-C punch-through voltage + + 3to8 Demux - - - - - Partitioning factor of parasitic B-C cap + + 4to16 demultiplexer verilog device - - - - - Partitioning factor of parasitic B-E cap + + 4to16 Demux - - - - - - C-S zero-bias depletion capacitance + + externally controlled voltage source - - - - - - C-S built-in potential - + + + voltage in Volts + וולטים בוולט - - - - - - C-S grading coefficient + + Externally Controlled Voltage Source - - - - - - C-S punch-through voltage + + EPFL-EKV MOS 2.6 verilog device - - - - - - Low current forward transit time at VBC=0V + + long = 1, short = 2 - - - - - - Time constant for base and B-C space charge layer width modulation + + length parameter + - - - - Time constant for modelling carrier jam at low VCE - - - + - - - - - Neutral emitter storage time - - - - - - - - Exponent factor for current dependence of neutral emitter storage time + + + + + m - - - - - - Saturation time constant at high current densities + + Width parameter - - - - - Smoothing factor for current dependence of base and collector transit time + parallel multiple device number - - - - - Partitioning factor for base and collector portion + series multiple device number - - - - - Internal collector resistance at low electric field + gate oxide capacitance per unit area - - - - - - Voltage separating ohmic and saturation velocity regime + + F/m**2 - - - - - - Internal C-E saturation voltage + + metallurgical junction depth - - - - - Collector punch-through voltage + channel width correction - - - - - Storage time for inverse operation + channel length correction - - - - - Total parasitic B-E capacitance + long channel threshold voltage - - - - - Total parasitic B-C capacitance + body effect parameter - - - - - - Factor for additional delay time of minority charge + + V**(1/2) - - - - - Factor for additional delay time of transfer current + bulk Fermi potential - - - - - Flag for turning on and off of vertical NQS effect - + + + + transconductance parameter + פרמטר מוליכות-על - - - - - - Flicker noise coefficient + + + A/V**2 - - - - - Flicker noise exponent factor + mobility reduction coefficient - - - - - Flag for determining where to tag the flicker noise source + + + + + + 1/V - - - - - Scaling factor for collector minority charge in direction of emitter width + mobility coefficient - - - - - - Scaling factor for collector minority charge in direction of emitter length + + + + V/m - - - - - - Bandgap voltage extrapolated to 0 K + + + longitudinal critical field - - - - - - First order relative TC of parameter T0 + + depletion length coefficient - - - - - - Second order relative TC of parameter T0 + + narrow-channel effect coefficient - - - - - - Temperature exponent for RCI0 + + reverse short channel charge density - - - - - - Relative TC of saturation drift velocity + + A*s/m**2 - - - - - - Relative TC of VCES + + characteristic length - - - - - Temperature exponent of internal base resistance + threshold voltage temperature coefficient - - - - - - Temperature exponent of external base resistance + + V/K - - - - - Temperature exponent of external collector resistance + mobility temperature coefficient - - - - - Temperature exponent of emitter resistance + Longitudinal critical field temperature exponent - - - - - Temperature exponent of mobility in substrate transistor transit time + Ibb temperature coefficient - - - - - Effective emitter bandgap voltage + + 1/K - - - - - Effective collector bandgap voltage + + heavily doped diffusion length - - - - Effective substrate bandgap voltage + drain/source diffusion sheet resistance - - - - - Coefficient K1 in T-dependent band-gap equation + + Ohm/square - - - - Coefficient K2 in T-dependent band-gap equation + source contact resistance - - - - - Exponent coefficient in B-E junction current temperature dependence + + + + + + + + + + + + + Ohm - - - - - - Relative TC of forward current gain for V2.1 model + + drain contact resistance - - - - Flag for turning on and off self-heating effect + gate to source overlap capacitance - - - - - J/W + + + + + F/m - - - - - Flag for compatibility with v2.1 model (0=v2.1) + + gate to drain overlap capacitance - - - - - - Temperature at which parameters are specified + + gate to bulk overlap capacitance - - - - - Temperature change w.r.t. chip temperature for particular transistor + first impact ionization coefficient - - HICUM L2 v2.22 + + 1/m - - HICUM Level 0 v1.2 verilog device + + second impact ionization coefficient - - - - reverse Early voltage (normalization volt.) + + saturation voltage factor for impact ionization - - - flag for turning on base related critical current + area related theshold voltage mismatch parameter - - - - Smoothing factor for the d.c. injection width + + V*m - - - - BE charge built-in voltage for d.c. transfer current + + area related gain mismatch parameter - - - charge BE exponent factor for d.c. transfer current + area related body effect mismatch parameter - - - - BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current + + sqrt(V)*m - - - TC of iqf + + + + + + + + + + + A + + + + + + - - - Exponent factor for temperature dependent thermal resistance + F - - npn HICUM L0 v1.2 + + + diode relative area - pnp HICUM L0 v1.2 + charge partition parameter - - HICUM Level 0 v1.2g verilog device + + + + + + + + parameter measurement temperature - - high-injection roll-off current + + + + + + + + Celsius - - TC of iqf (bandgap coefficient of zero bias hole charge) + + EPFL-EKV NMOS 2.6 - - TC of avalanche prefactor, identical to alfav of Hicum/L2 + + EPFL-EKV PMOS 2.6 - - TC of avalanche exponential factor, identical to alqav of Hicum/L2 + + equation defined device - - Emitter part coefficient of the zero bias hole charge temperature variation + + type of equations - Collector part coefficient of the zero bias hole charge temperature variation + number of branches - - Bandgap TC parameter of ver + + + current equation - - Bandgap TC parameter of vef + + + charge equation - - Specific recombination current at the BC barrier for high forward injection + + Equation Defined Device - - npn HICUM L0 v1.2g - + + equation + משוואה - - pnp HICUM L0 v1.2g - + + + + Equation + משוואה - - HICUM Level 0 v1.3 verilog device - + + put result into dataset + הכנס תוצאה לקומץ מידע - - Flag for using third order solution for transfer current + + externally driven transient simulation - - bias dependence for reverse Early voltage - + + + integration method + שיטת אינטגרציה - - Flag for turning temperature dependence of tef0 on and off - + + + order of integration method + סדר שיטת האינטגרציה - TC of Reverse Early voltage - + + initial step size in seconds + גודל צעד התחלתי בשניות - TC of AVER - + + minimum step size in seconds + גודל צעד מינימלי בשניות - - Bandgap difference between base and BE-junction - + + + relative tolerance of local truncation error + טולרנס יחסי לשגיאת עיגול מקומית - Frist-order TC of iqfh - - - - - Second-order TC of iqfh - - - - - npn HICUM L0 v1.3 - + + absolute tolerance of local truncation error + טולרנס אבסולוטי לשגיאת עיגול מקומית - - pnp HICUM L0 v1.3 - + + + overestimation of local truncation error + הערכה מופרזת לשגיאת עיגול מקומית - - HICUM Level 2 v2.1 verilog device + + + relax time step raster - - Partitioning factor of parasitic B-C capacitance + + + perform an initial DC analysis - - Noise factor for internal base resistance + + + maximum step size in seconds - - HICUM L2 v2.1 + + External transient simulation - - HICUM Level 2 v2.23 verilog device + + 1bit full adder verilog device - - HICUM L2 v2.23 + + 1Bit FullAdder - - HICUM Level 2 v2.24 verilog device + + 2bit full adder verilog device - - HICUM L2 v2.24 + + 2Bit FullAdder - - hicumL2V2p31n verilog device + + gated D latch verilog device - - Weight factor for the low current minority charge + + Gated D-Latch - - Parameter describing the slope of hjEi(VBE) + + 4bit Gray to binary converter verilog device - - Smoothing parameter for hjEi(VBE) at high voltage + + 4Bit Gray2Bin - - Time constant for modeling carrier jam at low VCE - + + ground (reference potential) + אדמה (פוטנציאל יחוס) - Barrier voltage - - - - - Normalization parameter - - - - - Smoothing parameter for barrier voltage - - - - - fitting factor for critical current - - - - - Flag for turning on and off of correlated noise implementation - + Ground + אדמה - - Emitter resistance flicker noise coefficient - + + gyrator (impedance inverter) + גירטור (מסובב) (הופך עכבה) - - Emitter resistance flicker noise exponent factor - + + gyrator ratio + יחס גירטור - - Bandgap difference between B and B-E junction used for hjEi0 and hf0 - + + Gyrator + גירטור - - Temperature coefficient for ahjEi + + 1bit half adder verilog device - - Temperature coefficient for hjEi0 + + 1Bit HalfAdder - - Temperature coefficient for Rth - + + Harmonic balance simulation + סימולצית איזון הרמוני - - First order relative TC of parameter Rth - + + number of harmonics + מספר הרמוניות - - HICUM L2 V2.31 - + + Harmonic balance + איזון הרמוני @@ -12082,7 +7789,7 @@ Wrong 'component' line format! - + ERROR: No file name in SPICE component "%1". @@ -12505,11 +8212,15 @@ Wrong 'component' line format! מקור זרם נשלט מתח - voltage controlled voltage source מתח מקור נשלט מתח + + + voltage controlled resistor + + resistance gain @@ -12544,7 +8255,7 @@ Wrong 'component' line format! - + ERROR: No file name in %1 component "%2". @@ -12707,7 +8418,7 @@ Wrong 'component' line format! - + invalid פסול @@ -12816,7 +8527,7 @@ Wrong 'component' line format! - + Successfully exported @@ -12839,8 +8550,8 @@ Use PNG, JPEG or SVG graphics! - - + + verilog-a user devices @@ -12899,14 +8610,14 @@ Use PNG, JPEG or SVG graphics! - + diagrams - + paintings @@ -13024,16 +8735,16 @@ Set the Octave location on the application settings. - + - + untitled ללא שם - + Format Error: 'Painting' field is not closed! @@ -13207,17 +8918,17 @@ Unknown field! - + WARNING: Skipping library component "%1". - - ERROR: Cannot load library component "%1". + + ERROR: "%1": Cannot load library component "%2" from "%3" - + WARNING: Ignore simulation component in subcircuit "%1". @@ -13227,7 +8938,7 @@ Unknown field! - + ERROR: Only one digital simulation allowed. @@ -13354,11 +9065,17 @@ a substrate with lower permittivity and larger height. Cannot save settings file ! + + + Quarter wave filters do not allow low-pass nor high-pass masks + + + QucsActiveFilter - + &File @@ -13368,7 +9085,29 @@ a substrate with lower permittivity and larger height. - + + &View + + + + + &Console + + + + + Enables/disables the filter calculation console + + + + + Console + +Enables/disables the filter calculation console + + + + &Help @@ -13388,30 +9127,30 @@ a substrate with lower permittivity and larger height. - - + + Passband attenuation, Ap (dB) - + Stopband attenuation, As (dB) - - Cuttof frequency, Fc (Hz) + + Cutoff frequency, Fc (Hz) - - + + Stopband frequency, Fs (Hz) - + Passband ripple Rp(dB) @@ -13421,7 +9160,7 @@ a substrate with lower permittivity and larger height. - + Filter order @@ -13471,27 +9210,61 @@ a substrate with lower permittivity and larger height. - - Calculation console + + Low Pass - - Filter topology + + General filter amplitude-frequency response - - Filter type: + + + + Unable to implement filter with such parameters and topology +Change parameters and/or topology and try again! + + + + + + Filter calculation was successful - LowPass + Filter calculation terminated with error! + + + + + Filter calculation terminated with error + + + + + Lower cutoff frequency, Fl (Hz) + + + + + Copyright (C) 2014, 2015 by + + + + + Filter topology + Filter type: + + + + High Pass @@ -13517,62 +9290,45 @@ a substrate with lower permittivity and larger height. - + Cauer section - - General amplitude frequency response - - - - - Filter topology preview (one stage) - - - - + Filter parameters - + Transfer function and Topology - - General filter amplidure-frequency response - - - - + Filter topology preview - + Filter calculation console - + + + Ready. + מוכן. + + + Upper cutoff frequency of band-pass/band-stop filter is less than lower. Unable to implement such filter. Change parameters and try again. - - - - Unable to implement filter with such parameters and topology -Change parapeters and/or topology and try again! - - - - + Unable to use Cauer section for Chebyshev or Butterworth frequency response. Try to use another topology. @@ -13588,40 +9344,28 @@ frequency response. Try to use another topology. Function will be implemented in future version - - - -Filter calculation was sucessfull - - - - - -Filter calculation terminated with error - - Upper cutoff frequency, Fu (Hz) - - Lower cuttoff frequency, Fl (Hz) + + Transient bandwidth, TW (Hz) - - Transient bandwidth, TW (Hz) + + Error! - + Active filter design - + About... אודות... @@ -13633,12 +9377,7 @@ Active Filter synthesis program - - Copyright (C) 2014 by - - - - + About Qt @@ -13646,7 +9385,7 @@ Active Filter synthesis program QucsApp - + Schematic סכמה @@ -13662,42 +9401,42 @@ Active Filter synthesis program - + VHDL Sources - - + + Verilog Sources - - + + Verilog-A Sources - - + + Octave Scripts - + Spice Files - + Any File כל קובץ - + The schematic search path has been refreshed. @@ -13717,7 +9456,7 @@ Active Filter synthesis program סכמות - + New חדש @@ -13802,13 +9541,13 @@ Active Filter synthesis program - + - + @@ -13831,7 +9570,7 @@ Active Filter synthesis program שגיאה - + Cannot open "%1". @@ -13843,8 +9582,16 @@ Active Filter synthesis program - - + + + + + Search results + + + + + @@ -13863,13 +9610,18 @@ Active Filter synthesis program מידע - + Default icon not found: %1.png - + + verilog-a user devices + + + + -port -פורט @@ -13880,13 +9632,13 @@ Active Filter synthesis program - + The document contains unsaved changes! המסמך מכיל שינויים שלא נשמרו! - + Do you want to save the changes before copying? @@ -13897,13 +9649,13 @@ Active Filter synthesis program - + &Save &שמור - + Copy file @@ -13937,31 +9689,31 @@ Active Filter synthesis program - + Warning אזהרה - + This will delete the file permanently! Continue ? הפעולה הבאה תמחק את הקובץ לצמיתות! להמשיך? - + No לא - + - + Yes כן - + unknown @@ -14122,7 +9874,7 @@ Active Filter synthesis program - + @@ -14136,7 +9888,7 @@ Active Filter synthesis program מוכן. - + Creating new text editor... @@ -14200,12 +9952,12 @@ Active Filter synthesis program - + Cancel בטל - + Cannot overwrite an open document לא יכול לכתוב על מסמך פתוח @@ -14220,7 +9972,7 @@ Active Filter synthesis program שומר את כל הקבצים... - + Closing file... סוגר קובץ... @@ -14244,10 +9996,6 @@ Active Filter synthesis program Open examples directory... - - OK - אשר - Printing... @@ -16041,10 +11789,6 @@ About Qt by Trolltech Warnings in last simulation! Press F5 - - About... - אודות... - QucsAttenuator @@ -16310,7 +12054,7 @@ Very simple text editor for Qucs QucsFilter - + &File @@ -16350,7 +12094,7 @@ Very simple text editor for Qucs - + Filter type: @@ -16386,29 +12130,29 @@ Very simple text editor for Qucs - + Corner frequency: - + Stop frequency: - + Stop band frequency: - - + + Pass band ripple: - + Stop band attenuation: @@ -16476,19 +12220,19 @@ Filter synthesis program - + Result: - + Error שגיאה - + Stop frequency must be greater than start frequency. @@ -16643,17 +12387,22 @@ Enables/disables the table of contents אודות - + Component Selection - - Search... + + Search Lib Components - + + Clear + + + + Component @@ -16668,13 +12417,19 @@ Enables/disables the table of contents - + About... אודות... Library Manager for Qucs + + + + + + Copyright (C) 2011-2015 Qucs Team @@ -16686,7 +12441,7 @@ Enables/disables the table of contents - + QucsLib Help @@ -16706,14 +12461,17 @@ Enables/disables the table of contents - - Search result + + + + + Search results - + - + @@ -16722,13 +12480,13 @@ Enables/disables the table of contents שגיאה - + Cannot open "%1". - + @@ -16736,21 +12494,6 @@ Enables/disables the table of contents Library is corrupt. - - - Search Library Component - - - - - Result - - - - - No appropriate component found. - - QucsSettingsDialog @@ -17761,7 +13504,7 @@ Edits the symbol for this schematic - + Error שגיאה @@ -17779,7 +13522,7 @@ Set the admsXml location on the application settings. - + ERROR: Cannot create library file "%s". @@ -17788,83 +13531,46 @@ Set the admsXml location on the application settings. SearchDialog - - - - Dialog - - - - Text to search for - - - - Text to replace with - - - - Ask before replacing - - - - Case sensitive - - - - Whole words only - - - - Search backwards - - - - Next - - - - - Close @@ -17878,29 +13584,6 @@ Set the admsXml location on the application settings. Search Text - - - The search result contains all components whose -name contains the search string. All libraries -are included in the search. - - - - - Search string: - - - - - Search - - - - - - Search result - - SettingsDialog @@ -18343,7 +14026,7 @@ are included in the search. SymbolWidget - + Symbol: @@ -18352,6 +14035,13 @@ are included in the search. ! Drag n'Drop me ! + + + Warning: Symbol '%1' missing in Qucs Library. +Drag and Drop may still work. +Please contact the developers. + + TextDoc diff --git a/qucs/translations/qucs_hu.ts b/qucs/translations/qucs_hu.ts index cbe3f30d67..87c8b375ae 100644 --- a/qucs/translations/qucs_hu.ts +++ b/qucs/translations/qucs_hu.ts @@ -3534,62 +3534,6 @@ Resistor color code computation program - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - @@ -3745,10 +3689,6 @@ Resistor color code computation program - - - - polarity @@ -3953,10 +3893,6 @@ Resistor color code computation program - - - - @@ -4097,5710 +4033,1481 @@ Resistor color code computation program - - bsim3v34nMOS verilog device - + + + + + + + + + + + simulation temperature + szimulációs hőmérséklet + + + + capacitor + kondenzátor + capacitance in Farad + kapacitás Farad-ban + + + initial voltage for transient simulation + kezdeti feszültség tranziens szimulációhoz + + + + + + + + schematic symbol + Rajzjel + + + + Capacitor + Kondenzátor + + + + current controlled current source + áramvezérelt áramgenerátor + + + + + + forward transfer factor + áttétel + + + + + + + + + + + + + + + delay time + késleltetési idő + + + + Current Controlled Current Source + Áramvezérelt áramgenerátor + + + + current controlled voltage source + áramvezérelt feszültséggenerátor + + + + Current Controlled Voltage Source + Áramvezérelt feszültség generátor + + + + circulator + cirkulátor + + + + reference impedance of port 1 + névleges impedancia az 1-es csatlakozón + + + reference impedance of port 2 + névleges impedancia az 2-es csatlakozón + + + reference impedance of port 3 + névleges impedancia az 3-as csatlakozón + + + + Circulator + Cirkulátor + + + + coaxial transmission line + + + + + + relative permittivity of dielectric + szigetelő relatív permittivitása + + + + + specific resistance of conductor + + + + + + relative permeability of conductor + + + + inner diameter of shield + + + + diameter of inner conductor + + + + + mechanical length of the line + + + + + + + loss tangent + érintő veszteség + + + + Coaxial Line + Koax kábel + + + + 1bit comparator verilog device + + + + + 1Bit Comparator + + + + + 2bit comparator verilog device + + + + + 2Bit Comparator + + + + + 4bit comparator verilog device + + + + + 4Bit Comparator + + + + + number of input ports + bemenetek száma + + - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - simulation temperature - szimulációs hőmérséklet - - - - bsim3v34nMOS - - - - - bsim3v34pMOS verilog device - - - - - bsim3v34pMOS - - - - - bsim4v30nMOS verilog device - - - - - bsim4v30nMOS - - - - - bsim4v30pMOS verilog device - - - - - bsim4v30pMOS - - - - - capacitor - kondenzátor - - - - capacitance in Farad - kapacitás Farad-ban - - - - initial voltage for transient simulation - kezdeti feszültség tranziens szimulációhoz - - - - - - - - - schematic symbol - Rajzjel - - - - Capacitor - Kondenzátor - - - - current controlled current source - áramvezérelt áramgenerátor - - - - - - forward transfer factor - áttétel - - - - - - - - - - - - - - - delay time - késleltetési idő - - - - Current Controlled Current Source - Áramvezérelt áramgenerátor - - - - current controlled voltage source - áramvezérelt feszültséggenerátor - - - - Current Controlled Voltage Source - Áramvezérelt feszültség generátor - - - - circulator - cirkulátor - - - - reference impedance of port 1 - névleges impedancia az 1-es csatlakozón - - - - reference impedance of port 2 - névleges impedancia az 2-es csatlakozón - - - - reference impedance of port 3 - névleges impedancia az 3-as csatlakozón - - - - Circulator - Cirkulátor - - - - coaxial transmission line - - - - - - relative permittivity of dielectric - szigetelő relatív permittivitása - - - - - - specific resistance of conductor - - - - - - - relative permeability of conductor - - - - - inner diameter of shield - - - - - diameter of inner conductor - - - - - - mechanical length of the line - - - - - - - - loss tangent - érintő veszteség - - - - Coaxial Line - Koax kábel - - - - 1bit comparator verilog device - - - - - 1Bit Comparator - - - - - 2bit comparator verilog device - - - - - 2Bit Comparator - - - - - 4bit comparator verilog device - - - - - 4Bit Comparator - - - - - number of input ports - bemenetek száma - - - - - - - voltage of high level - a magas szint feszültsége - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Error - Hiba - - - - Format Error: -Wrong line start! - Formázási hiba: -Helytelen sor kezdés! - - - - Format Error: -Unknown component! -%1 - -Do you make use of loadable components? - - - - - Format Error: -Wrong 'component' line format! - Formázási hiba: -Helytelen 'component' sor! - - - - coplanar line - sík vonal - - - - - - - - - - - - - - name of substrate definition - szubsztrát definició neve - - - - - - - - - - - width of the line - a vonal szélessége - - - - - - - width of a gap - a rés szélessége - - - - - - - length of the line - a vonal hossza - - - - - - - material at the backside of the substrate - - - - - use approximation instead of precise equation - - - - - Coplanar Line - Sík vonal - - - - ideal coupler - - - - - coupling factor - - - - - phase shift of coupling path in degree - - - - - Coupler - - - - - coplanar gap - - - - - width of gap between the two lines - - - - - Coplanar Gap - - - - - coplanar open - - - - - width of gap at end of line - - - - - Coplanar Open - - - - - coplanar short - - - - - Coplanar Short - - - - - coplanar step - - - - - - - width of line 1 - 1-es vonal szélessége - - - - - - width of line 2 - 2-es vonal szélessége - - - - distance between ground planes - - - - - Coplanar Step - - - - - coupled transmission lines - - - - - characteristic impedance of even mode - - - - - characteristic impedance of odd mode - - - - - - - - electrical length of the line - a vonal elektromos hossza - - - - relative dielectric constant of even mode - - - - - relative dielectric constant of odd mode - - - - - attenuation factor per length of even mode - - - - - attenuation factor per length of odd mode - - - - - Coupled Transmission Line - - - - - D flip flop with asynchron reset - - - - - D-FlipFlop - - - - - - dc simulation - DC szimuláció - - - - - - - relative tolerance for convergence - - - - - - - - absolute tolerance for currents - abszolút áram tűrés - - - - - - - absolute tolerance for voltages - abszolút feszültség tűrés - - - - put operating points into dataset - müködési pontok mentése az adatbeállításba - - - - - - - maximum number of iterations until error - iterációk maximális száma a hibáig - - - - save subcircuit nodes into dataset - beágyazott kapcsolás csomopontjainak mentése az adatbeállításba - - - - preferred convergence algorithm - preferált konvergencia algoritmus - - - - - - method for solving the circuit matrix - - - - - dc block - DC blokkoló - - - - dc Block - DC Blokkoló - - - - dc feed - AC blokkoló - - - - dc Feed - AC Blokkoló - - - - D flip flop with set and reset verilog device - - - - - - - - cross coupled gate transfer function high scaling factor - - - - - - - - cross coupled gate transfer function low scaling factor - - - - - - - - cross coupled gate delay - - - - - D-FlipFlop w/ SR - - - - - diac (bidirectional trigger diode) - - - - - - (bidirectional) breakover voltage - - - - - (bidirectional) breakover current - - - - - - - parasitic capacitance - - - - - - - - - emission coefficient - emissziós együttható - - - - - - intrinsic junction resistance - - - - - Diac - - - - - - digital simulation - -Digitális szimuláció - - - - type of simulation - Szimuláció típusa - - - - duration of TimeList simulation - TimeList szimuláció időtartama - - - - netlist format - kötéslista formátum - - - - - digital source - Digitális jelforrás - - - - - number of the port - kivezetések száma - - - - initial output value - kezdeti kimeneti érték - - - - list of times for changing output value - időlista a kimenet váltásához - - - - diode - Dióda - - - - - - zero-bias junction capacitance - - - - - - - - - grading coefficient - - - - - - - - junction potential - - - - - linear capacitance - lineáris kapacitás - - - - recombination current parameter - - - - - emission coefficient for Isr - - - - - ohmic series resistance - ohmikus soros ellenállás - - - - - - transit time - átviteli idő - - - - high-injection knee current (0=infinity) - - - - - - - reverse breakdown voltage - - - - - - - current at reverse breakdown voltage - - - - - Bv linear temperature coefficient - - - - - Rs linear temperature coefficient - - - - - Tt linear temperature coefficient - - - - - Tt quadratic temperature coefficient - - - - - M linear temperature coefficient - - - - - M quadratic temperature coefficient - - - - - - default area for diode - - - - - Diode - Dióda - - - - data voltage level shifter (digital to analogue) verilog device - - - - - - voltage level - - - - - - time delay - - - - - D2A Level Shifter - - - - - data voltage level shifter (analogue to digital) verilog device - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - V - - - - - A2D Level Shifter - - - - - 2to4 demultiplexer verilog device - - - - - 2to4 Demux - - - - - 3to8 demultiplexer verilog device - - - - - 3to8 Demux - - - - - 4to16 demultiplexer verilog device - - - - - 4to16 Demux - - - - - externally controlled voltage source - - - - - - voltage in Volts - feszültség Voltban - - - - Externally Controlled Voltage Source - - - - - EPFL-EKV MOS 2.6 verilog device - - - - - long = 1, short = 2 - - - - - length parameter - - - - - - - - - - - - - m - - - - - Width parameter - - - - - parallel multiple device number - - - - - series multiple device number - - - - - gate oxide capacitance per unit area - - - - - F/m**2 - - - - - metallurgical junction depth - - - - - channel width correction - - - - - channel length correction - - - - - long channel threshold voltage - - - - - body effect parameter - - - - - V**(1/2) - - - - - bulk Fermi potential - - - - - - - transconductance parameter - - - - - - A/V**2 - - - - - mobility reduction coefficient - - - - - - - - - - - - - 1/V - - - - - mobility coefficient - - - - - - - V/m - - - - - - longitudinal critical field - - - - - depletion length coefficient - - - - - narrow-channel effect coefficient - - - - - reverse short channel charge density - - - - - A*s/m**2 - - - - - characteristic length - - - - - threshold voltage temperature coefficient - - - - - - - - - - - - - V/K - - - - - mobility temperature coefficient - - - - - Longitudinal critical field temperature exponent - - - - - Ibb temperature coefficient - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1/K - - - - - heavily doped diffusion length - - - - - drain/source diffusion sheet resistance - - - - - Ohm/square - - - - - source contact resistance - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Ohm - Ohm - - - - drain contact resistance - - - - - gate to source overlap capacitance - - - - - - - - F/m - - - - - gate to drain overlap capacitance - - - - - gate to bulk overlap capacitance - - - - - first impact ionization coefficient - - - - - 1/m - - - - - second impact ionization coefficient - - - - - saturation voltage factor for impact ionization - - - - - area related theshold voltage mismatch parameter - - - - - V*m - - - - - area related gain mismatch parameter - - - - - area related body effect mismatch parameter - - - - - sqrt(V)*m - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - F - - - - - - diode relative area - - - - - charge partition parameter - - - - - - - - - - - parameter measurement temperature - - - - - - - - - - - Celsius - - - - - EPFL-EKV NMOS 2.6 - - - - - EPFL-EKV PMOS 2.6 - - - - - equation defined device - - - - - type of equations - - - - - number of branches - - - - - - current equation - - - - - - charge equation - - - - - Equation Defined Device - - - - - equation - egyenlet - - - - - - Equation - Egyenlet - - - - put result into dataset - eredmény mentése az adatbeállításba - - - - externally driven transient simulation - - - - - - integration method - integrációs módszer - - - - - order of integration method - integrációs módszer sorrendje - - - - - initial step size in seconds - kezdeti lépésméret másodpercekben - - - - - minimum step size in seconds - minimum lépésszám másodpercenként - - - - - relative tolerance of local truncation error - - - - - - absolute tolerance of local truncation error - - - - - - overestimation of local truncation error - - - - - - relax time step raster - - - - - - perform an initial DC analysis - kezdeti DC analízis végrehajtása - - - - - maximum step size in seconds - maximális lépésköz [mp] - - - - External transient simulation - - - - - 1bit full adder verilog device - - - - - 1Bit FullAdder - - - - - 2bit full adder verilog device - - - - - 2Bit FullAdder - - - - - gated D latch verilog device - - - - - Gated D-Latch - - - - - 4bit Gray to binary converter verilog device - - - - - 4Bit Gray2Bin - - - - - ground (reference potential) - föld (referencia potenciál) - - - - Ground - Föld - - - - gyrator (impedance inverter) - girátor (impedanciatranszformátor) - - - - gyrator ratio - - - - - Gyrator - Girátor - - - - 1bit half adder verilog device - - - - - 1Bit HalfAdder - - - - - Harmonic balance simulation - Harmonikus egyensúly szimuláció - - - - number of harmonics - harmonikusok száma - - - - Harmonic balance - Harmonikus egyensúly - - - - HBT model by Ferdinand-Braun-Institut (FBH), Berlin - - - - - - - - Ignored - Mellőz - - - - Device operating temperature, Celsius - - - - - Thermal resistance, K/W - - - - - - - - - - - - - - Thermal capacitance - - - - - Scaling factor, number of emitter fingers - - - - - Length of emitter finger, m - - - - - Width of emitter finger, m - - - - - Forward saturation current density, A/um^2 - - - - - Forward current emission coefficient - - - - - Forward thermal activation energy, V, (0 == disables temperature dependence) - - - - - B-E leakage saturation current density, A/um^2 - - - - - B-E leakage emission coefficient - - - - - Limiting resistor of B-E leakage diode, Ohm - - - - - B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - 2nd B-E leakage saturation current density, A/um^2 - - - - - 2nd B-E leakage emission coefficient - - - - - 2nd Limiting resistor of B-E leakage diode, Ohm - - - - - 2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Reverse saturation current density, A/um^2 - - - - - Reverse current emission coefficient - - - - - Reverse thermal activation energy, V, (0 == disables temperature dependence) - - - - - Fraction of Cjc that goes to internal base node - - - - - B-C leakage saturation current density, A/um^2 (0. switches off diode) - - - - - B-C leakage emission coefficient (0. switches off diode) - - - - - Limiting resistor of B-C leakage diode, Ohm - - - - - B-C leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Ideal forward beta - - - - - Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence) - - - - - Ideal reverse beta - - - - - Forward Early voltage, V, (0 == disables Early Effect) - - - - - Reverse Early voltage, V, (0 == disables Early Effect) - - - - - Forward high-injection knee current, A, (0 == disables Webster Effect) - - - - - Reverse high-injection knee current, A, (0 == disables Webster Effect) - - - - - C-E breakdown exponent, (0 == disables collector break-down) - - - - - C-E breakdown voltage, V, (0 == disables collector break-down) - - - - - C-E breakdown factor, (0 == disables collector break-down) - - - - - B-E breakdown voltage, V, (0 == disables emitter break-down) - - - - - Ideal reverse transit time, s - - - - - Extrinsic BC diffusion capacitance, F - - - - - Ideal forward transit time, s - - - - - Temperature coefficient of forward transit time - - - - - Excess transit time coefficient at base push-out - - - - - Smoothing parameter for Thcs - - - - - B-E zero-bias depletion capacitance, F/um^2 - - - - - B-E junction exponential factor - - - - - B-E junction built-in potential, V - - - - - B-C zero-bias depletion capacitance, F/um^2 - - - - - B-C junction exponential factor - - - - - B-C junction built-in potential, V - - - - - not used - - - - - Minimum B-C depletion capacitance (Vbc dependence), F/um^2 - - - - - Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction) - - - - - Fraction of Cmin, lower limit of BC capacitance (Ic dependence) - - - - - Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out) - - - - - Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out) - - - - - Slope of Jk at high currents , Ohm*um^2 - - - - - Voltage shift of base push-out onset, V - - - - - Collector resistance, Ohm/finger - - - - - Emitter resistance, Ohm/finger - - - - - Extrinsic base resistance, Ohm/finger - - - - - Inner Base ohmic resistance, Ohm/finger - - - - - Collector inductance, H - - - - - Emitter inductance, H - - - - - Base inductance, H - - - - - Extrinsic B-C capacitance, F - - - - - Extrinsic base capacitance, F - - - - - Extrinsic collector capacitance, F - - - - - - Flicker-noise coefficient - - - - - - Flicker-noise exponent - - - - - - Flicker-noise frequency exponent - - - - - Burst noise coefficient - - - - - Burst noise exponent - - - - - Burst noise corner frequency, Hz - - - - - Ambient temperature at which the parameters were determined - - - - - FBH HBT - - - - - HICUM Level 0 v1.12 verilog device - - - - - - - - (Modified) saturation current - - - - - - - - Non-ideality coefficient of forward collector current - - - - - - - - Non-ideality coefficient of reverse collector current - - - - - - - - - - - - - - - - forward Early voltage (normalization volt.) - - - - - - - - forward d.c. high-injection roll-off current - - - - - - - - inverse d.c. high-injection roll-off current - - - - - - - - high-injection correction current - - - - - - - high-injection correction factor - - - - - - - - BE saturation current - - - - - - - - BE non-ideality factor - - - - - - - - BE recombination saturation current - - - - - - - - BE recombination non-ideality factor - - - - - - - - BC saturation current - - - - - - - - BC non-ideality factor - - - - - - - - Zero-bias BE depletion capacitance - - - - - - - - BE built-in voltage - - - - - - - - BE exponent factor - - - - - - - - Ratio of maximum to zero-bias value - - - - - - - - low current transit time at Vbici=0 - - - - - - - - Base width modulation contribution - - - - - - - - SCR width modulation contribution - - - - - - - - Storage time in neutral emitter - - - - - - - - Exponent factor for emitter transit time - - - - - - - - Saturation time at high current densities - - - - - - - - Smoothing factor for current dependence - - - - - - - - Storage time at inverse operation - - - - - - - - Low-field collector resistance under emitter - - - - - - - - Voltage dividing ohmic and satur.region - - - - - - - - - - - - Punch-through voltage - - - - - - - - Saturation voltage - - - - - - - - Total zero-bias BC depletion capacitance - - - - - - - - BC built-in voltage - - - - - - - - BC exponent factor - - - - - - - - Punch-through voltage of BC junction - - - - - - - - Zero-bias external BC depletion capacitance - - - - - - - - External BC built-in voltage - - - - - - - - External BC exponent factor - + + + + voltage of high level + a magas szint feszültsége + + + + + + + + + + + + + + - - - - Split factor = Cjci0/Cjc0 - - - - - - - - Internal base resistance at zero-bias - - - - - - - - Geometry factor - + + + + + + + + + + + + + + + + + + Error + Hiba - - - - - - - - - - External base series resistance - + + Format Error: +Wrong line start! + Formázási hiba: +Helytelen sor kezdés! - - - - - - - - - - Emitter series resistance + + Format Error: +Unknown component! +%1 + +Do you make use of loadable components? - - - - - - - - - - External collector series resistance - + + Format Error: +Wrong 'component' line format! + Formázási hiba: +Helytelen 'component' sor! - - - - - - - - - - Substrate transistor transfer saturation current - + + coplanar line + sík vonal - - - - - Substrate transistor transfer current non-ideality factor - + + + + + + + + + + + + name of substrate definition + szubsztrát definició neve - - - - SC saturation current - - - - - - - - SC non-ideality factor - + + + + + + + + width of the line + a vonal szélessége - - - - Zero-bias SC depletion capacitance - - - - - - - - SC built-in voltage - - - - - - - - External SC exponent factor - + + + + width of a gap + a rés szélessége - - - - SC punch-through voltage - - - - - - - - Collector-base isolation (overlap) capacitance - - - - - - - - Emitter-base oxide capacitance - - - - - - - - Exponent factor - + + + + length of the line + a vonal hossza - - - - Prefactor + + + + material at the backside of the substrate - - - - M^(1-AF) - - - - - - - - flicker noise exponent factor - - - - - - - - Bandgap-voltage + use approximation instead of precise equation - - - - - Effective emitter bandgap-voltage - + + Coplanar Line + Sík vonal - - - - - Effective collector bandgap-voltage + + ideal coupler - - - - - Effective substrate bandgap-voltage + + coupling factor - - - - - Coefficient K1 in T-dependent bandgap equation + + phase shift of coupling path in degree - - - - - Coefficient K2 in T-dependent bandgap equation + + Coupler - - - - - Frist-order TC of tf0 + + coplanar gap - - - - - Second-order TC of tf0 + + width of gap between the two lines - - - - - - 1/K^2 + + Coplanar Gap - - - - - - - - - Exponent coefficient in transfer current temperature dependence + + coplanar open - - - - - Exponent coefficient in BE junction current temperature dependence + + width of gap at end of line - - - - - TC of epi-collector diffusivity + + Coplanar Open - - - - - Relative TC of satur.drift velocity + + coplanar short - - - - - Relative TC of vces + + Coplanar Short - - - - - TC of internal base resistance + + coplanar step - - - - - TC of external base resistance - + + + + width of line 1 + 1-es vonal szélessége - - - - TC of external collector resistance - + + + width of line 2 + 2-es vonal szélessége - - - - TC of emitter resistances + distance between ground planes - - - - TC of avalanche prefactor + + Coplanar Step - - - - TC of avalanche exponential factor + + coupled transmission lines - - - - - Flag for self-heating calculation + + characteristic impedance of even mode - - - - - - - - - Thermal resistance + characteristic impedance of odd mode - - - - - - - - - K/W - + + + + + electrical length of the line + a vonal elektromos hossza - - - - - Ws/K + + relative dielectric constant of even mode - - - - Temperature for which parameters are valid + relative dielectric constant of odd mode - - - - - - - - - C + + attenuation factor per length of even mode - - - - Temperature change for particular transistor + attenuation factor per length of odd mode - - - - - - - - - K + + Coupled Transmission Line - - npn HICUM L0 v1.12 + + D flip flop with asynchron reset - - pnp HICUM L0 v1.12 + + D-FlipFlop - - HICUM Level 2 v2.22 verilog device - + + + dc simulation + DC szimuláció - - - - - - GICCR constant + + + + + relative tolerance for convergence - - - - - A^2s - + + + + + absolute tolerance for currents + abszolút áram tűrés - - - - - Zero-bias hole charge - + + + + absolute tolerance for voltages + abszolút feszültség tűrés - - - - - - - - - Coul - + + put operating points into dataset + müködési pontok mentése az adatbeállításba - - - - - - High-current correction for 2D and 3D effects - + + + + + maximum number of iterations until error + iterációk maximális száma a hibáig + + + + save subcircuit nodes into dataset + beágyazott kapcsolás csomopontjainak mentése az adatbeállításba - - - - - Emitter minority charge weighting factor in HBTs - + preferred convergence algorithm + preferált konvergencia algoritmus - - - - - - Collector minority charge weighting factor in HBTs + + + + method for solving the circuit matrix - - - - - - B-E depletion charge weighting factor in HBTs - + + dc block + DC blokkoló - - - - - - B-C depletion charge weighting factor in HBTs - + + dc Block + DC Blokkoló - - - - - - Internal B-E saturation current - + + dc feed + AC blokkoló - - - - - - Internal B-E current ideality factor - + + dc Feed + AC Blokkoló - - - - - - Internal B-E recombination saturation current + + D flip flop with set and reset verilog device - - - - - Internal B-E recombination current ideality factor + + + + cross coupled gate transfer function high scaling factor - - - - - Peripheral B-E saturation current + + + + cross coupled gate transfer function low scaling factor - - - - - - Peripheral B-E current ideality factor + + + + + cross coupled gate delay - - - - - - Peripheral B-E recombination saturation current + + D-FlipFlop w/ SR - - - - - - Peripheral B-E recombination current ideality factor + + diac (bidirectional trigger diode) - - - - - - Non-ideality factor for III-V HBTs + + + (bidirectional) breakover voltage - - - - Base current recombination time constant at B-C barrier for high forward injection + (bidirectional) breakover current - - - - - - Internal B-C saturation current + + + + parasitic capacitance - - - - - - Internal B-C current ideality factor - + + + + + + emission coefficient + emissziós együttható - - - - - External B-C saturation current + + + intrinsic junction resistance - - - - - - External B-C current ideality factor + + Diac - - - - - - B-E tunneling saturation current - + + + digital simulation + +Digitális szimuláció - - - - - - Exponent factor for tunneling current - + + type of simulation + Szimuláció típusa - - - - Specifies the base node connection for the tunneling current - + duration of TimeList simulation + TimeList szimuláció időtartama - - - - - Avalanche current factor - + netlist format + kötéslista formátum - - - - - - Exponent factor for avalanche current - + + + digital source + Digitális jelforrás - - - - - - Relative TC for FAVL - + + + number of the port + kivezetések száma - - - - - - Relative TC for QAVL - + + initial output value + kezdeti kimeneti érték - - - - - - Zero bias internal base resistance - + + list of times for changing output value + időlista a kimenet váltásához - - - - - - Factor for geometry dependence of emitter current crowding - + + diode + Dióda - - - - - - Correction factor for modulation by B-E and B-C space charge layer + + + + zero-bias junction capacitance - - - - - Ratio of HF shunt to total internal capacitance (lateral NQS effect) + + + + + grading coefficient - - - - - Ration of internal to total minority charge + + + + junction potential - - - - - - Forward ideality factor of substrate transfer current - + + linear capacitance + lineáris kapacitás - - - - - C-S diode saturation current + recombination current parameter - - - - - - Ideality factor of C-S diode current + + emission coefficient for Isr - - - - - Transit time for forward operation of substrate transistor - + ohmic series resistance + ohmikus soros ellenállás + + + + + + transit time + átviteli idő - - - - - - Substrate series resistance + + high-injection knee current (0=infinity) - - - - - - Substrate shunt capacitance + + + + reverse breakdown voltage - - - - - - Internal B-E zero-bias depletion capacitance + + + + current at reverse breakdown voltage - - - - - - Internal B-E built-in potential + + Bv linear temperature coefficient - - - - - - Internal B-E grading coefficient + + Rs linear temperature coefficient - - - - - Ratio of maximum to zero-bias value of internal B-E capacitance + Tt linear temperature coefficient - - - - - Peripheral B-E zero-bias depletion capacitance + Tt quadratic temperature coefficient - - - - - - Peripheral B-E built-in potential + + M linear temperature coefficient - - - - - - Peripheral B-E grading coefficient + + M quadratic temperature coefficient - - - - - - Ratio of maximum to zero-bias value of peripheral B-E capacitance + + + default area for diode - - - - - - Internal B-C zero-bias depletion capacitance - + + Diode + Dióda - - - - - - Internal B-C built-in potential + + data voltage level shifter (digital to analogue) verilog device - - - - - Internal B-C grading coefficient + + voltage level - - - - - Internal B-C punch-through voltage + + time delay - - - - - - External B-C zero-bias depletion capacitance + + D2A Level Shifter - - - - - - External B-C built-in potential + + data voltage level shifter (analogue to digital) verilog device + + + + + + + + + + + + + + + + + + + - - - - - External B-C grading coefficient + + + V - - - - - - External B-C punch-through voltage + + A2D Level Shifter - - - - - Partitioning factor of parasitic B-C cap + + 2to4 demultiplexer verilog device - - - - - Partitioning factor of parasitic B-E cap + + 2to4 Demux - - - - - - C-S zero-bias depletion capacitance + + 3to8 demultiplexer verilog device - - - - - - C-S built-in potential + + 3to8 Demux - - - - - - C-S grading coefficient + + 4to16 demultiplexer verilog device - - - - - - C-S punch-through voltage + + 4to16 Demux - - - - - - Low current forward transit time at VBC=0V + + externally controlled voltage source - - - - - - Time constant for base and B-C space charge layer width modulation - + + + voltage in Volts + feszültség Voltban - - - - - Time constant for modelling carrier jam at low VCE + + Externally Controlled Voltage Source - - - - - - Neutral emitter storage time + + EPFL-EKV MOS 2.6 verilog device - - - - - - Exponent factor for current dependence of neutral emitter storage time + + long = 1, short = 2 - - - - - Saturation time constant at high current densities + length parameter + + + + - - - - - Smoothing factor for current dependence of base and collector transit time + + + + + m - - - - - - Partitioning factor for base and collector portion + + Width parameter - - - - - - Internal collector resistance at low electric field + + parallel multiple device number - - - - - - Voltage separating ohmic and saturation velocity regime + + series multiple device number - - - - - - Internal C-E saturation voltage + + gate oxide capacitance per unit area - - - - - - Collector punch-through voltage + + F/m**2 - - - - - - Storage time for inverse operation + + metallurgical junction depth - - - - - Total parasitic B-E capacitance + channel width correction - - - - - Total parasitic B-C capacitance + channel length correction - - - - - Factor for additional delay time of minority charge + long channel threshold voltage - - - - - - Factor for additional delay time of transfer current + + body effect parameter - - - - - Flag for turning on and off of vertical NQS effect + + V**(1/2) - - - - - Flicker noise coefficient + bulk Fermi potential - - - - - - Flicker noise exponent factor + + + + transconductance parameter - - - - - Flag for determining where to tag the flicker noise source + + + A/V**2 - - - - - Scaling factor for collector minority charge in direction of emitter width + mobility reduction coefficient - - - - - - Scaling factor for collector minority charge in direction of emitter length + + + + + + 1/V - - - - - Bandgap voltage extrapolated to 0 K + mobility coefficient + - - - - - First order relative TC of parameter T0 + + V/m - - - - - - Second order relative TC of parameter T0 + + + longitudinal critical field - - - - - - Temperature exponent for RCI0 + + depletion length coefficient - - - - - Relative TC of saturation drift velocity + narrow-channel effect coefficient - - - - - - Relative TC of VCES + + reverse short channel charge density - - - - - - Temperature exponent of internal base resistance + + A*s/m**2 - - - - - Temperature exponent of external base resistance + characteristic length - - - - - - Temperature exponent of external collector resistance + + threshold voltage temperature coefficient - - - - - - Temperature exponent of emitter resistance + + V/K - - - - - Temperature exponent of mobility in substrate transistor transit time + mobility temperature coefficient - - - - Effective emitter bandgap voltage - - - - - - - - Effective collector bandgap voltage - - - - - - - - Effective substrate bandgap voltage - - - - - - - - Coefficient K1 in T-dependent band-gap equation + Longitudinal critical field temperature exponent - - - - Coefficient K2 in T-dependent band-gap equation + Ibb temperature coefficient - - - - - Exponent coefficient in B-E junction current temperature dependence + + 1/K - - - - - Relative TC of forward current gain for V2.1 model + heavily doped diffusion length - - - - Flag for turning on and off self-heating effect - - - - - - - - J/W + drain/source diffusion sheet resistance - - - - - Flag for compatibility with v2.1 model (0=v2.1) + + Ohm/square - - - - - Temperature at which parameters are specified + source contact resistance + - - - - - Temperature change w.r.t. chip temperature for particular transistor - + + + + + + + + + + + Ohm + Ohm - - HICUM L2 v2.22 + + drain contact resistance - - HICUM Level 0 v1.2 verilog device + + gate to source overlap capacitance - - - - reverse Early voltage (normalization volt.) + + + + + F/m - - - - flag for turning on base related critical current + + gate to drain overlap capacitance - - - - Smoothing factor for the d.c. injection width + + gate to bulk overlap capacitance - - - - BE charge built-in voltage for d.c. transfer current + + first impact ionization coefficient - - - - charge BE exponent factor for d.c. transfer current + + 1/m - - - BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current + second impact ionization coefficient - - - TC of iqf + + saturation voltage factor for impact ionization - - - - Exponent factor for temperature dependent thermal resistance + + area related theshold voltage mismatch parameter - - npn HICUM L0 v1.2 + + V*m - - pnp HICUM L0 v1.2 + + area related gain mismatch parameter - - HICUM Level 0 v1.2g verilog device + + area related body effect mismatch parameter - - high-injection roll-off current + + sqrt(V)*m - - TC of iqf (bandgap coefficient of zero bias hole charge) + + + + + + + + + + + A - - TC of avalanche prefactor, identical to alfav of Hicum/L2 + + + + + + + + F - - TC of avalanche exponential factor, identical to alqav of Hicum/L2 + + + diode relative area - - Emitter part coefficient of the zero bias hole charge temperature variation + + charge partition parameter - Collector part coefficient of the zero bias hole charge temperature variation + + + + + + + parameter measurement temperature - - Bandgap TC parameter of ver + + + + + + + + Celsius - - Bandgap TC parameter of vef + + EPFL-EKV NMOS 2.6 - - Specific recombination current at the BC barrier for high forward injection + + EPFL-EKV PMOS 2.6 - - npn HICUM L0 v1.2g + + equation defined device - - pnp HICUM L0 v1.2g + + type of equations - - HICUM Level 0 v1.3 verilog device + + number of branches - - Flag for using third order solution for transfer current + + + current equation - - bias dependence for reverse Early voltage + + + charge equation - - Flag for turning temperature dependence of tef0 on and off + + Equation Defined Device - - TC of Reverse Early voltage - + + equation + egyenlet - - TC of AVER - + + + + Equation + Egyenlet - - Bandgap difference between base and BE-junction - + + put result into dataset + eredmény mentése az adatbeállításba - - Frist-order TC of iqfh + + externally driven transient simulation - - Second-order TC of iqfh - + + + integration method + integrációs módszer - - npn HICUM L0 v1.3 - + + + order of integration method + integrációs módszer sorrendje - - pnp HICUM L0 v1.3 - + + + initial step size in seconds + kezdeti lépésméret másodpercekben - - HICUM Level 2 v2.1 verilog device - + + + minimum step size in seconds + minimum lépésszám másodpercenként - - Partitioning factor of parasitic B-C capacitance + + + relative tolerance of local truncation error - - Noise factor for internal base resistance + + + absolute tolerance of local truncation error - - HICUM L2 v2.1 + + + overestimation of local truncation error - - HICUM Level 2 v2.23 verilog device + + + relax time step raster - - HICUM L2 v2.23 - + + + perform an initial DC analysis + kezdeti DC analízis végrehajtása - - HICUM Level 2 v2.24 verilog device - + + + maximum step size in seconds + maximális lépésköz [mp] - - HICUM L2 v2.24 + + External transient simulation - - hicumL2V2p31n verilog device + + 1bit full adder verilog device - - Weight factor for the low current minority charge + + 1Bit FullAdder - - Parameter describing the slope of hjEi(VBE) + + 2bit full adder verilog device - - Smoothing parameter for hjEi(VBE) at high voltage + + 2Bit FullAdder - - Time constant for modeling carrier jam at low VCE + + gated D latch verilog device - - Barrier voltage + + Gated D-Latch - - Normalization parameter + + 4bit Gray to binary converter verilog device - - Smoothing parameter for barrier voltage + + 4Bit Gray2Bin - - fitting factor for critical current - + + ground (reference potential) + föld (referencia potenciál) - - Flag for turning on and off of correlated noise implementation - + + Ground + Föld - - Emitter resistance flicker noise coefficient - + + gyrator (impedance inverter) + girátor (impedanciatranszformátor) - - Emitter resistance flicker noise exponent factor + + gyrator ratio - - Bandgap difference between B and B-E junction used for hjEi0 and hf0 - + + Gyrator + Girátor - - Temperature coefficient for ahjEi + + 1bit half adder verilog device - - Temperature coefficient for hjEi0 + + 1Bit HalfAdder - - Temperature coefficient for Rth - + + Harmonic balance simulation + Harmonikus egyensúly szimuláció - - First order relative TC of parameter Rth - + + number of harmonics + harmonikusok száma - - HICUM L2 V2.31 - + + Harmonic balance + Harmonikus egyensúly @@ -12092,7 +7799,7 @@ Digitális szimuláció - + ERROR: No file name in SPICE component "%1". HIBA: A "%1" SPICE komponensnek nincs fájlneve. @@ -12515,11 +8222,15 @@ Digitális szimuláció Feszültség vezérelt áramgenerátor - voltage controlled voltage source feszültségvezérelt feszültséggenerátor + + + voltage controlled resistor + + resistance gain @@ -12554,7 +8265,7 @@ Digitális szimuláció - + ERROR: No file name in %1 component "%2". @@ -12717,7 +8428,7 @@ Digitális szimuláció - + invalid érvénytelen @@ -12826,7 +8537,7 @@ Digitális szimuláció - + Successfully exported @@ -12849,8 +8560,8 @@ Use PNG, JPEG or SVG graphics! - - + + verilog-a user devices @@ -12909,14 +8620,14 @@ Use PNG, JPEG or SVG graphics! - + diagrams - + paintings @@ -13034,16 +8745,16 @@ Set the Octave location on the application settings. - + - + untitled cím nélkül - + Format Error: 'Painting' field is not closed! @@ -13219,17 +8930,17 @@ Ismeretlen mező! HIBA: A "%1" beágyazott kapcsolás nem tölthető be. - + WARNING: Skipping library component "%1". - - ERROR: Cannot load library component "%1". - HIBA: A "%1" alkatrész nem tölthető be a katalógusból. + + ERROR: "%1": Cannot load library component "%2" from "%3" + - + WARNING: Ignore simulation component in subcircuit "%1". FIGYELMEZTETÉS: Mellőzve az alkatrész a "%1" beágyazott kapcsolásban. @@ -13239,7 +8950,7 @@ Ismeretlen mező! - + ERROR: Only one digital simulation allowed. HIBA: Csak egy digitális szimáció megengedett. @@ -13368,11 +9079,17 @@ a substrate with lower permittivity and larger height. Cannot save settings file ! + + + Quarter wave filters do not allow low-pass nor high-pass masks + + + QucsActiveFilter - + &File &Fájl @@ -13382,7 +9099,29 @@ a substrate with lower permittivity and larger height. &Kilépés - + + &View + &Megjelenítés + + + + &Console + + + + + Enables/disables the filter calculation console + + + + + Console + +Enables/disables the filter calculation console + + + + &Help &Súgó @@ -13402,30 +9141,30 @@ a substrate with lower permittivity and larger height. Qt Névjegy... - - + + Passband attenuation, Ap (dB) - + Stopband attenuation, As (dB) - - Cuttof frequency, Fc (Hz) + + Cutoff frequency, Fc (Hz) - - + + Stopband frequency, Fs (Hz) - + Passband ripple Rp(dB) @@ -13435,7 +9174,7 @@ a substrate with lower permittivity and larger height. - + Filter order @@ -13485,27 +9224,61 @@ a substrate with lower permittivity and larger height. - - Calculation console + + Low Pass - - Filter topology + + General filter amplitude-frequency response - - Filter type: - Szűrő típus: + + + + Unable to implement filter with such parameters and topology +Change parameters and/or topology and try again! + + + + + + Filter calculation was successful + - LowPass + Filter calculation terminated with error! + + + + + Filter calculation terminated with error + + + + + Lower cutoff frequency, Fl (Hz) + + + + + Copyright (C) 2014, 2015 by + Copyright (C) 2005, 2006 by {2014, 2015 ?} + + + + Filter topology + Filter type: + Szűrő típus: + + + High Pass @@ -13531,62 +9304,46 @@ a substrate with lower permittivity and larger height. - + Cauer section - - General amplitude frequency response - - - - - Filter topology preview (one stage) - - - - + Filter parameters - + Transfer function and Topology - - General filter amplidure-frequency response - - - - + Filter topology preview - + Filter calculation console - + + + Ready. + Kész. + + + + Upper cutoff frequency of band-pass/band-stop filter is less than lower. Unable to implement such filter. Change parameters and try again. - - - - Unable to implement filter with such parameters and topology -Change parapeters and/or topology and try again! - - - - + Unable to use Cauer section for Chebyshev or Butterworth frequency response. Try to use another topology. @@ -13602,40 +9359,28 @@ frequency response. Try to use another topology. Function will be implemented in future version - - - -Filter calculation was sucessfull - - - - - -Filter calculation terminated with error - - Upper cutoff frequency, Fu (Hz) - - Lower cuttoff frequency, Fl (Hz) + + Transient bandwidth, TW (Hz) - - Transient bandwidth, TW (Hz) + + Error! - + Active filter design - + About... Névjegy... @@ -13647,12 +9392,7 @@ Active Filter synthesis program - - Copyright (C) 2014 by - Copyright (C) 2005, 2006 by {2014 ?} - - - + About Qt Qt Névjegy @@ -13660,7 +9400,7 @@ Active Filter synthesis program QucsApp - + Schematic Kapcsolási rajz @@ -13676,42 +9416,42 @@ Active Filter synthesis program - + VHDL Sources VHDL forrás - - + + Verilog Sources Verilog forrás - - + + Verilog-A Sources - - + + Octave Scripts - + Spice Files - + Any File Bármelyik fájl - + The schematic search path has been refreshed. @@ -13731,7 +9471,7 @@ Active Filter synthesis program Kapcsolási rajzok - + New Új @@ -13816,13 +9556,13 @@ Active Filter synthesis program - + - + @@ -13845,7 +9585,7 @@ Active Filter synthesis program Hiba - + Cannot open "%1". "%1" megnyitása nem sikerült. @@ -13857,8 +9597,16 @@ Active Filter synthesis program Alkatrész katalógus hibás. - - + + + + + Search results + + + + + @@ -13877,13 +9625,18 @@ Active Filter synthesis program Infó - + Default icon not found: %1.png - + + verilog-a user devices + + + + -port -csatlakozás @@ -13894,7 +9647,7 @@ Active Filter synthesis program - + The document contains unsaved changes! A dokumentum tartalmaz mentetlen változásokat! @@ -13902,7 +9655,7 @@ Active Filter synthesis program - + Do you want to save the changes before copying? @@ -13913,13 +9666,13 @@ Active Filter synthesis program - + &Save &Mentés - + Copy file @@ -13953,31 +9706,31 @@ Active Filter synthesis program - + Warning Figyelmeztetések - + This will delete the file permanently! Continue ? A fájl véglegesen törlődik! Folytatja? - + No Nem - + - + Yes Igen - + unknown @@ -14138,7 +9891,7 @@ Active Filter synthesis program - + @@ -14153,7 +9906,7 @@ Active Filter synthesis program - + Creating new text editor... Új szövegszerkesztő készítése... @@ -14218,12 +9971,12 @@ Active Filter synthesis program - + Cancel Mégsem - + Cannot overwrite an open document Nyitott dokumentumot nem lehet felülírni @@ -14238,7 +9991,7 @@ Active Filter synthesis program Összes fájl mentése... - + Closing file... Fájl bezárása... @@ -14262,10 +10015,6 @@ Active Filter synthesis program Open examples directory... - - OK - Ok - Printing... @@ -16215,110 +11964,6 @@ Qt a Trolltech-től Warnings in last simulation! Press F5 Az utolsó szimuláció figyelmeztetései! F5 - - About... - Névjegy... - - - Qucs Version - Qucs verzió - - - Quite Universal Circuit Simulator - Univerzális Áramkör Szimuláció - - - Copyright (C) - Copyright (C) - - - by Michael Margraf - by Michael Margraf - - - Simulator by Stefan Jahn - Szimulátor: Stefan Jahn - - - VHDL simulator 'FreeHDL' by Edwin Naroska and Marius Vollmer - VHDL szimuláció 'FreeHDL': Edwin Naroska és Marius Vollmer - - - Special thanks to Jens Flucke and Raimund Jacob - Külön köszönet Jens Flucke-nek és Raimund Jacob-nak - - - Many thanks to Mike Brinson for correcting the VHDL output - További köszönet Mike Brinson-nak a korrekt VHDL kimenetért - - - GUI improvements by Gopala Krishna A - GUI tökéletesítés köszönet Gopala Krishna A - - - Verilog-AMS interface by Helene Parruitte - Verilog-AMS interfész, köszönet Helene Parruitte - - - Translations: - Fordítók: - - - German by Stefan Jahn - Stefan Jahn - Német - - - Polish by Dariusz Pienkowski - Dariusz Pienkowski - Lengyel - - - Romanian by Radu Circa - Radu Circa - Román - - - French by Vincent Habchi, F5RCS - Vincent Habchi, F5RCS - Francia - - - Spanish by Jose L. Redrejo Rodriguez - Jose L. Redrejo Rodriguez - Spanyol - - - Japanese by Toyoyuki Ishikawa - Toyoyuki Ishikawa - Japán - - - Italian by Giorgio Luparia and Claudio Girardi - Giorgio Luparia és Claudio Girardi - Olasz - - - Hebrew by Dotan Nahum - Dotan Nahum - Héber - - - Swedish by Peter Landgren - Peter Landgren - Svéd - - - Turkish by Onur and Ozgur Cobanoglu - Onur and Ozgur Cobanoglu - Török - - - Hungarian by Jozsef Bus - Bús József - Magyar - - - Russian by Igor Gorbounov - Igor Gorbounov - Orosz - - - Czech by Marek Straka - Marek Straka - Cseh - - - Catalan by Antoni Subirats - Antoni Subirats - Katalán - QucsAttenuator @@ -16589,7 +12234,7 @@ Egyszerü szövegszerkesztő a Qucs-hoz QucsFilter - + &File &Fájl @@ -16629,7 +12274,7 @@ Egyszerü szövegszerkesztő a Qucs-hoz - + Filter type: Szűrő típus: @@ -16665,29 +12310,29 @@ Egyszerü szövegszerkesztő a Qucs-hoz - + Corner frequency: Törésponti frekvencia: - + Stop frequency: Felső határfrekvencia: - + Stop band frequency: Felső sáv határfrekvencia: - - + + Pass band ripple: Lengés: - + Stop band attenuation: Felső sáv csillapítás: @@ -16757,19 +12402,19 @@ Szűrő méretező program - + Result: Eredmény: - + Error Hiba - + Stop frequency must be greater than start frequency. A felső határfrekvencia nem lehet kisebb mint az alsó. @@ -16926,17 +12571,22 @@ Be vagy Kikapcsolja a tartalomjegyzéket Névjegy - + Component Selection Alkatrész kiválasztás - - Search... - Keresés... + + Search Lib Components + - + + Clear + + + + Component Alkatrész @@ -16951,7 +12601,7 @@ Be vagy Kikapcsolja a tartalomjegyzéket Modell megjelenítése - + About... Névjegy... @@ -16962,6 +12612,12 @@ Be vagy Kikapcsolja a tartalomjegyzéket Alkatrész-katalógus kezelő a Qucs-hoz + + + Copyright (C) 2011-2015 Qucs Team + + + Copyright (C) 2005 by Michael Margraf @@ -16970,7 +12626,7 @@ Be vagy Kikapcsolja a tartalomjegyzéket - + QucsLib Help QucsLib súgó @@ -16990,14 +12646,17 @@ Be vagy Kikapcsolja a tartalomjegyzéket Modell - - Search result - Keresés eredménye + + + + + Search results + - + - + @@ -17006,13 +12665,13 @@ Be vagy Kikapcsolja a tartalomjegyzéket Hiba - + Cannot open "%1". "%1" megnyitása nem sikerült. - + @@ -17020,21 +12679,6 @@ Be vagy Kikapcsolja a tartalomjegyzéket Library is corrupt. Alkatrész katalógus hibás. - - - Search Library Component - Keresés az alkatrész katalógusban - - - - Result - Eredmény - - - - No appropriate component found. - Nem találtam megfelelő alkatrészt. - QucsSettingsDialog @@ -18051,7 +13695,7 @@ Szerkeszti az áramköri szimbólumot a kapcsoláshoz - + Error Hiba @@ -18069,7 +13713,7 @@ Set the admsXml location on the application settings. - + ERROR: Cannot create library file "%s". HIBA: A "%1" alkatrész-katalógus fájl nem hozható létre. @@ -18078,83 +13722,46 @@ Set the admsXml location on the application settings. SearchDialog - - - - Dialog - - - - Text to search for Keresett szöveg - - - - Text to replace with Csere erre - - - - Ask before replacing Csere előtt rákérdez - - - - Case sensitive Kis- és nagybetű különbözik - - - - Whole words only Csak teljes szavak - - - - Search backwards Keresés visszafelé - - - - Next - - - - - Close Bezár @@ -18168,31 +13775,6 @@ Set the admsXml location on the application settings. Search Text Keresett szöveg - - - The search result contains all components whose -name contains the search string. All libraries -are included in the search. - A keresés eredménye tartalmazza azokat a omponenseket, amelyek -neve tartalmazza a keresett szöveget. Minden könyvtár -szerepel a keresésben. - - - - Search string: - Szöveg keresés: - - - - Search - Keresés - - - - - Search result - Keresés eredménye - SettingsDialog @@ -18476,12 +14058,6 @@ Rács megjelenítése Simulation aborted by the user! - - Errors: -------- - Hibák: -------- - SpiceDialog @@ -18644,7 +14220,7 @@ Rács megjelenítése SymbolWidget - + Symbol: Szimbólum: @@ -18653,6 +14229,13 @@ Rács megjelenítése ! Drag n'Drop me ! ! Húzd és ejtsd ! + + + Warning: Symbol '%1' missing in Qucs Library. +Drag and Drop may still work. +Please contact the developers. + + TextDoc diff --git a/qucs/translations/qucs_it.ts b/qucs/translations/qucs_it.ts index 5e01424ede..09ecaed9bf 100644 --- a/qucs/translations/qucs_it.ts +++ b/qucs/translations/qucs_it.ts @@ -3533,62 +3533,6 @@ Package estratto con successo! - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - @@ -3744,10 +3688,6 @@ Package estratto con successo! - - - - polarity @@ -3952,10 +3892,6 @@ Package estratto con successo! - - - - @@ -4096,5709 +4032,1480 @@ Package estratto con successo! Bond Wire - - bsim3v34nMOS verilog device - + + + + + + + + + + + simulation temperature + temperatura di simulazione + + + + capacitor + condensatore + capacitance in Farad + capacità in Farad + + + initial voltage for transient simulation + tensione iniziale per la simulazione del transitorio + + + + + + + + schematic symbol + simbolo schema + + + + Capacitor + Condensatore + + + + current controlled current source + generatore di corrente controllato in corrente + + + + + + forward transfer factor + fattore di trasferimento + + + + + + + + + + + + + + + delay time + tempo di ritardo + + + + Current Controlled Current Source + Generatore di Corrente Controllato in Corrente + + + + current controlled voltage source + generatore di tensione controllato in corrente + + + + Current Controlled Voltage Source + Generatore di Tensione Controllato in Corrente + + + + circulator + circolatore + + + + reference impedance of port 1 + impedenza di riferimento della porta 1 + + + reference impedance of port 2 + impedenza di riferimento della porta 2 + + + reference impedance of port 3 + impedenza di riferimento della porta 3 + + + + Circulator + Circolatore + + + + coaxial transmission line + linea di trasmissione coassiale + + + + + relative permittivity of dielectric + permittività relativa del dielettrico + + + + + specific resistance of conductor + resistenza specifica del conduttore + + + + + relative permeability of conductor + permeabilità relativa del conduttore + + + inner diameter of shield + diametro interno dello schermo + + + diameter of inner conductor + diametro del conduttore interno + + + + mechanical length of the line + lunghezza meccanica della linea + + + + + + loss tangent + fattore di dissipazione (tan d) + + + + Coaxial Line + Linea Coassiale + + + + 1bit comparator verilog device + + + + + 1Bit Comparator + + + + + 2bit comparator verilog device + + + + + 2Bit Comparator + + + + + 4bit comparator verilog device + + + + + 4Bit Comparator + + + + + number of input ports + numero di porte di ingresso + + - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - simulation temperature - temperatura di simulazione - - - - bsim3v34nMOS - - - - - bsim3v34pMOS verilog device - - - - - bsim3v34pMOS - - - - - bsim4v30nMOS verilog device - - - - - bsim4v30nMOS - - - - - bsim4v30pMOS verilog device - - - - - bsim4v30pMOS - - - - - capacitor - condensatore - - - - capacitance in Farad - capacità in Farad - - - - initial voltage for transient simulation - tensione iniziale per la simulazione del transitorio - - - - - - - - - schematic symbol - simbolo schema - - - - Capacitor - Condensatore - - - - current controlled current source - generatore di corrente controllato in corrente - - - - - - forward transfer factor - fattore di trasferimento - - - - - - - - - - - - - - - delay time - tempo di ritardo - - - - Current Controlled Current Source - Generatore di Corrente Controllato in Corrente - - - - current controlled voltage source - generatore di tensione controllato in corrente - - - - Current Controlled Voltage Source - Generatore di Tensione Controllato in Corrente - - - - circulator - circolatore - - - - reference impedance of port 1 - impedenza di riferimento della porta 1 - - - - reference impedance of port 2 - impedenza di riferimento della porta 2 - - - - reference impedance of port 3 - impedenza di riferimento della porta 3 - - - - Circulator - Circolatore - - - - coaxial transmission line - linea di trasmissione coassiale - - - - - relative permittivity of dielectric - permittività relativa del dielettrico - - - - - - specific resistance of conductor - resistenza specifica del conduttore - - - - - - relative permeability of conductor - permeabilità relativa del conduttore - - - - inner diameter of shield - diametro interno dello schermo - - - - diameter of inner conductor - diametro del conduttore interno - - - - - mechanical length of the line - lunghezza meccanica della linea - - - - - - - loss tangent - fattore di dissipazione (tan d) - - - - Coaxial Line - Linea Coassiale - - - - 1bit comparator verilog device - - - - - 1Bit Comparator - - - - - 2bit comparator verilog device - - - - - 2Bit Comparator - - - - - 4bit comparator verilog device - - - - - 4Bit Comparator - - - - - number of input ports - numero di porte di ingresso - - - - - - - voltage of high level - tensione del livello alto - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Error - Errore - - - - Format Error: -Wrong line start! - Errore di formato: -Inizio linea errato! - - - - Format Error: -Unknown component! -%1 - -Do you make use of loadable components? - - - - - Format Error: -Wrong 'component' line format! - Errore di formato: -Formato della linea 'component' errato! - - - - coplanar line - linea coplanare - - - - - - - - - - - - - - name of substrate definition - nome della definizione del substrato - - - - - - - - - - - width of the line - larghezza della linea - - - - - - - width of a gap - larghezza di un'interruzione - - - - - - - length of the line - lunghezza della linea - - - - - - - material at the backside of the substrate - materiale sul retro del substrato - - - - use approximation instead of precise equation - usa un'approssimazione invece dell'equazione esatta - - - - Coplanar Line - Linea coplanare - - - - ideal coupler - accoppiatore ideale - - - - coupling factor - fattore di accoppiamento - - - - phase shift of coupling path in degree - sfasamento dell'accoppiamento in gradi - - - - Coupler - Accoppiatore - - - - coplanar gap - interruzione coplanare - - - - width of gap between the two lines - larghezza dell'interruzione tra le due linee - - - - Coplanar Gap - Interruzione Coplanare - - - - coplanar open - circuito aperto coplanare - - - - width of gap at end of line - larghezza interruzione a fine linea - - - - Coplanar Open - Circuito Aperto Coplanare - - - - coplanar short - corto circuito coplanare - - - - Coplanar Short - Corto Circuito Coplanare - - - - coplanar step - salto impedenza coplanare - - - - - - width of line 1 - larghezza della linea 1 - - - - - - width of line 2 - larghezza della linea 2 - - - - distance between ground planes - distanza tra piani di massa - - - - Coplanar Step - Salto Impedenza Coplanare - - - - coupled transmission lines - - - - - characteristic impedance of even mode - - - - - characteristic impedance of odd mode - - - - - - - - electrical length of the line - lunghezza elettrica della linea - - - - relative dielectric constant of even mode - - - - - relative dielectric constant of odd mode - - - - - attenuation factor per length of even mode - - - - - attenuation factor per length of odd mode - - - - - Coupled Transmission Line - - - - - D flip flop with asynchron reset - flip flop D con reset asincrono - - - - D-FlipFlop - FlipFlop D - - - - - dc simulation - simulazione dc - - - - - - - relative tolerance for convergence - tolleranza relativa per la convergenza - - - - - - - absolute tolerance for currents - tolleranza assoluta per correnti - - - - - - - absolute tolerance for voltages - tolleranza assoluta per tensioni - - - - put operating points into dataset - metti punti di lavoro nell insieme dati - - - - - - - maximum number of iterations until error - massimo numero di iterazioni - - - - save subcircuit nodes into dataset - salva nodi sottorcuito nell'insieme dati - - - - preferred convergence algorithm - algoritmo di convergenza preferito - - - - - - method for solving the circuit matrix - metodo per risolvere la matrice del circuito - - - - dc block - blocco dc - - - - dc Block - dc Block - - - - dc feed - dc feed - - - - dc Feed - dc Feed - - - - D flip flop with set and reset verilog device - - - - - - - - cross coupled gate transfer function high scaling factor - - - - - - - - cross coupled gate transfer function low scaling factor - - - - - - - - cross coupled gate delay - - - - - D-FlipFlop w/ SR - - - - - diac (bidirectional trigger diode) - - - - - - (bidirectional) breakover voltage - - - - - (bidirectional) breakover current - - - - - - - parasitic capacitance - - - - - - - - - emission coefficient - coefficiente di emissione - - - - - - intrinsic junction resistance - - - - - Diac - - - - - - digital simulation - simulazione digitale - - - - type of simulation - tipo simulazione - - - - duration of TimeList simulation - durata della simulazione TimeList - - - - netlist format - formato netlist - - - - - digital source - generatore digitale - - - - - number of the port - numero della porta - - - - initial output value - valore in uscita iniziale - - - - list of times for changing output value - Elenco istanti di cambiamento dell'uscita - - - - diode - diodo - - - - - - zero-bias junction capacitance - capacità giunzione con polarizzazione zero - - - - - - - - grading coefficient - coefficiente di gradualità - - - - - - - junction potential - potenziale giunzione - - - - linear capacitance - capacità lineare - - - - recombination current parameter - parametro della corrente di ricombinazione - - - - emission coefficient for Isr - coefficiente di emissione per Isr - - - - ohmic series resistance - resistenza ohmica serie - - - - - - transit time - tempo di transito - - - - high-injection knee current (0=infinity) - - - - - - - reverse breakdown voltage - tensione di rottura inversa - - - - - - current at reverse breakdown voltage - corrente alla tensione di rottura inversa - - - - Bv linear temperature coefficient - coefficiente di temperatura lineare per Bv - - - - Rs linear temperature coefficient - coefficiente di temperatura lineare per Rs - - - - Tt linear temperature coefficient - coefficiente di temperatura lineare per Tt - - - - Tt quadratic temperature coefficient - coefficiente di temperatura quadratico per Tt - - - - M linear temperature coefficient - coefficiente di temperatura lineare per M - - - - M quadratic temperature coefficient - coefficiente di temperatura quadratico per M - - - - - default area for diode - area predefinita per il diodo - - - - Diode - Diodo - - - - data voltage level shifter (digital to analogue) verilog device - - - - - - voltage level - - - - - - time delay - - - - - D2A Level Shifter - - - - - data voltage level shifter (analogue to digital) verilog device - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - V - - - - - A2D Level Shifter - - - - - 2to4 demultiplexer verilog device - - - - - 2to4 Demux - - - - - 3to8 demultiplexer verilog device - - - - - 3to8 Demux - - - - - 4to16 demultiplexer verilog device - - - - - 4to16 Demux - - - - - externally controlled voltage source - - - - - - voltage in Volts - tensione in Volts - - - - Externally Controlled Voltage Source - - - - - EPFL-EKV MOS 2.6 verilog device - - - - - long = 1, short = 2 - - - - - length parameter - - - - - - - - - - - - - m - - - - - Width parameter - - - - - parallel multiple device number - - - - - series multiple device number - - - - - gate oxide capacitance per unit area - - - - - F/m**2 - - - - - metallurgical junction depth - - - - - channel width correction - - - - - channel length correction - - - - - long channel threshold voltage - - - - - body effect parameter - - - - - V**(1/2) - - - - - bulk Fermi potential - - - - - - - transconductance parameter - parametro transconduttanza - - - - - A/V**2 - - - - - mobility reduction coefficient - - - - - - - - - - - - - 1/V - - - - - mobility coefficient - - - - - - - V/m - - - - - - longitudinal critical field - - - - - depletion length coefficient - - - - - narrow-channel effect coefficient - - - - - reverse short channel charge density - - - - - A*s/m**2 - - - - - characteristic length - - - - - threshold voltage temperature coefficient - - - - - - - - - - - - - V/K - - - - - mobility temperature coefficient - - - - - Longitudinal critical field temperature exponent - - - - - Ibb temperature coefficient - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1/K - - - - - heavily doped diffusion length - - - - - drain/source diffusion sheet resistance - - - - - Ohm/square - - - - - source contact resistance - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Ohm - Ohm - - - - drain contact resistance - - - - - gate to source overlap capacitance - - - - - - - - F/m - - - - - gate to drain overlap capacitance - - - - - gate to bulk overlap capacitance - - - - - first impact ionization coefficient - - - - - 1/m - - - - - second impact ionization coefficient - - - - - saturation voltage factor for impact ionization - - - - - area related theshold voltage mismatch parameter - - - - - V*m - - - - - area related gain mismatch parameter - - - - - area related body effect mismatch parameter - - - - - sqrt(V)*m - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - F - - - - - - diode relative area - - - - - charge partition parameter - - - - - - - - - - - parameter measurement temperature - temperatura di misura dei parametri - - - - - - - - - - Celsius - - - - - EPFL-EKV NMOS 2.6 - - - - - EPFL-EKV PMOS 2.6 - - - - - equation defined device - - - - - type of equations - tipo delle equazioni - - - - number of branches - - - - - - current equation - equazione in corrente - - - - - charge equation - equazione in carica - - - - Equation Defined Device - - - - - equation - equazione - - - - - - Equation - Equazione - - - - put result into dataset - metti risultato nell'insieme dati - - - - externally driven transient simulation - - - - - - integration method - metodo di integrazione - - - - - order of integration method - ordine del metodo di integrazione - - - - - initial step size in seconds - passo iniziale in secondi - - - - - minimum step size in seconds - passo minimo in secondi - - - - - relative tolerance of local truncation error - tolleranza relativa dell'errore di troncamento locale - - - - - absolute tolerance of local truncation error - tolleranza assoluta dell'errore di troncamento locale - - - - - overestimation of local truncation error - sovrastima dell'errore di troncamento locale - - - - - relax time step raster - rilassa griglia passi temporali - - - - - perform an initial DC analysis - esegui una analisi DC iniziale - - - - - maximum step size in seconds - passo massimo in secondi - - - - External transient simulation - - - - - 1bit full adder verilog device - - - - - 1Bit FullAdder - - - - - 2bit full adder verilog device - - - - - 2Bit FullAdder - - - - - gated D latch verilog device - - - - - Gated D-Latch - - - - - 4bit Gray to binary converter verilog device - - - - - 4Bit Gray2Bin - - - - - ground (reference potential) - terra (potenziale di riferimento) - - - - Ground - Terra - - - - gyrator (impedance inverter) - giratore (invertitore di impedenza) - - - - gyrator ratio - valore giratore - - - - Gyrator - Giratore - - - - 1bit half adder verilog device - - - - - 1Bit HalfAdder - - - - - Harmonic balance simulation - Simulazione Harmonic Balance - - - - number of harmonics - numero di armoniche - - - - Harmonic balance - Harmonic balance - - - - HBT model by Ferdinand-Braun-Institut (FBH), Berlin - Modello HBT del Ferdinand-Braun-Institut (FBH), Berlino - - - - - - - Ignored - Ignorato - - - - Device operating temperature, Celsius - Temperatura di lavoro del dispositivo, Celsius - - - - Thermal resistance, K/W - Resistenza termica, K/W - - - - - - - - - - - - - Thermal capacitance - Capacità termica - - - - Scaling factor, number of emitter fingers - Fattore di scala, numero di emettitori - - - - Length of emitter finger, m - Lunghezza di ogni emettitore, m - - - - Width of emitter finger, m - Larghezza di ogni emettitore, m - - - - Forward saturation current density, A/um^2 - corrente di saturazione diretta, A/um^2 - - - - Forward current emission coefficient - coefficiente di emissione diretta - - - - Forward thermal activation energy, V, (0 == disables temperature dependence) - Energia di attivazione termica diretta, V, (0 == disabilita la dipendenza dalla temperatura) - - - - B-E leakage saturation current density, A/um^2 - Densità di corrente di saturazione del leakage B-E, A/um^2 - - - - B-E leakage emission coefficient - coefficiente di emissione del leakage B-E - - - - Limiting resistor of B-E leakage diode, Ohm - Resistenza di limitazione del diodo di leakage B-E, Ohm - - - - B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - Energia di attivazione termica del leakage B-E, V, (0 == disabilita la dipendenza dalla temperatura) - - - - 2nd B-E leakage saturation current density, A/um^2 - Densità di corrente di saturazione del leakage B-E (2), A/um^2 - - - - 2nd B-E leakage emission coefficient - coefficiente di emissione del leakage B-E (2) - - - - 2nd Limiting resistor of B-E leakage diode, Ohm - Resistenza di limitazione del diodo di leakage B-E, Ohm (2) - - - - 2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - Energia di attivazione termica del leakage B-E (2), V, (0 == disabilita la dipendenza dalla temperatura) - - - - Reverse saturation current density, A/um^2 - corrente di saturazione inversa, A/um^2 - - - - Reverse current emission coefficient - coefficiente di emissione inversa - - - - Reverse thermal activation energy, V, (0 == disables temperature dependence) - Energia di attivazione termica inversa, V, (0 == disabilita la dipendenza dalla temperatura) - - - - Fraction of Cjc that goes to internal base node - Frazione di Cjc affluente al nodo di base interno - - - - B-C leakage saturation current density, A/um^2 (0. switches off diode) - Densità di corrente di saturazione del leakage B-C, A/um^2 (0. spegne il diodo) - - - - B-C leakage emission coefficient (0. switches off diode) - coefficiente di emissione per il leakage B-C (0. spegne il diodo) - - - - Limiting resistor of B-C leakage diode, Ohm - Resistenza di limitazione del diodo di leakage B-C, Ohm - - - - B-C leakage thermal activation energy, V, (0 == disables temperature dependence) - Energia di attivazione termica del leakage B-C, V, (0 == disabilita la dipendenza dalla temperatura) - - - - Ideal forward beta - Beta ideale diretto - - - - Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence) - Coefficiente di temperatura del guadagno di corrente diretto, -1/K, (0 == disabilita la dipendenza dalla temperatura) - - - - Ideal reverse beta - Beta ideale inverso - - - - Forward Early voltage, V, (0 == disables Early Effect) - Tensione di Early diretta, V, (0 == disabilita effetto Early) - - - - Reverse Early voltage, V, (0 == disables Early Effect) - Tensione di Early inversa, V, (0 == disabilita effetto Early) - - - - Forward high-injection knee current, A, (0 == disables Webster Effect) - - - - - Reverse high-injection knee current, A, (0 == disables Webster Effect) - - - - - C-E breakdown exponent, (0 == disables collector break-down) - Esponente di breakdown C-E, (0 == disabilita breakdown di collettore) - - - - C-E breakdown voltage, V, (0 == disables collector break-down) - Tensione di breakdown C-E, V, (0 == disabilita breakdown di collettore) - - - - C-E breakdown factor, (0 == disables collector break-down) - Fattore di breakdown C-E, (0 == disabilita breakdown di collettore) - - - - B-E breakdown voltage, V, (0 == disables emitter break-down) - Tensione di breakdown B-E, (0 == disabilita breakdown di emettitore) - - - - Ideal reverse transit time, s - Tempo di transito ideale inverso, s - - - - Extrinsic BC diffusion capacitance, F - Capacità di diffusione estrinseca BC, F - - - - Ideal forward transit time, s - tempo di transito diretto ideale, s - - - - Temperature coefficient of forward transit time - Coefficiente di temperatura del tempo di transito diretto - - - - Excess transit time coefficient at base push-out - - - - - Smoothing parameter for Thcs - - - - - B-E zero-bias depletion capacitance, F/um^2 - Capacità di svuotamento a zero bias B-E, F/um^2 - - - - B-E junction exponential factor - Fattore esponenziale giunzione B-E - - - - B-E junction built-in potential, V - Potenziale di built-in giunzione B-E, V - - - - B-C zero-bias depletion capacitance, F/um^2 - Capacità di svuotamento a zero bias B-C, F/um^2 - - - - B-C junction exponential factor - Fattore esponenziale giunzione B-C - - - - B-C junction built-in potential, V - Potenziale di built-in giunzione B-C, V - - - - not used - non usato - - - - Minimum B-C depletion capacitance (Vbc dependence), F/um^2 - Capacità di svuotamento B-C minima (dipendenza da Vbc), F/um^2 - - - - Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction) - Corrente di collettore alla quale Cbc è paria Cmin, A/um^2 (0 == disabilita riduzione Cbc) - - - - Fraction of Cmin, lower limit of BC capacitance (Ic dependence) - Frazione di Cmin, limite inferiore della capacità BC (dipendeza da Ic) - - - - Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out) - - - - - Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out) - - - - - Slope of Jk at high currents , Ohm*um^2 - Pendenza di jk a correnti elevate , Ohm*um^2 - - - - Voltage shift of base push-out onset, V - - - - - Collector resistance, Ohm/finger - Resistenza di collettore, Ohm/finger - - - - Emitter resistance, Ohm/finger - Resistenza di emettitore, Ohm/finger - - - - Extrinsic base resistance, Ohm/finger - Resistenza di base estrinseca, Ohm/finger - - - - Inner Base ohmic resistance, Ohm/finger - Resistenza ohmica di base interna, Ohm/finger - - - - Collector inductance, H - Induttanza di collettore, H - - - - Emitter inductance, H - Induttanza di emettitore, H - - - - Base inductance, H - Induttanza di base, H - - - - Extrinsic B-C capacitance, F - Capacità estrinseca B-C, F - - - - Extrinsic base capacitance, F - Capacità estrinseca di base, F - - - - Extrinsic collector capacitance, F - Capacità estrinseca di collettore, F - - - - - Flicker-noise coefficient - Coefficiente rumore flicker - - - - - Flicker-noise exponent - Esponente rumore flicker - - - - - Flicker-noise frequency exponent - Esponente frequenziale rumore flicker - - - - Burst noise coefficient - Coefficiente rumore burst - - - - Burst noise exponent - Esponente rumore burst - - - - Burst noise corner frequency, Hz - Corner frequency per il rumore burst, Hz + + + + voltage of high level + tensione del livello alto + + - Ambient temperature at which the parameters were determined - Temperatura ambiente alla quale i parametri sono stati determinati - - - - FBH HBT - FBH HBT - - - - HICUM Level 0 v1.12 verilog device - Dispositivo verilog HICUM Level 2 v2.1 {0 ?} {1.12 ?} - - + + + + + + + + + + + - - - - (Modified) saturation current - - - - - - - - Non-ideality coefficient of forward collector current - - - - - - - - Non-ideality coefficient of reverse collector current - - - - - - - - - - - - - - - - forward Early voltage (normalization volt.) - - - - - - - - forward d.c. high-injection roll-off current - - - - - - - - inverse d.c. high-injection roll-off current - - - - - - - - high-injection correction current - - - - - - - high-injection correction factor - - - - - - - - BE saturation current - - - - - - - - BE non-ideality factor - - - - - - - - BE recombination saturation current - - - - - - - - BE recombination non-ideality factor - - - - - - - - BC saturation current - - - - - - - - BC non-ideality factor - - - - - - - - Zero-bias BE depletion capacitance - - - - - - - - BE built-in voltage - - - - - - - - BE exponent factor - - - - - - - - Ratio of maximum to zero-bias value - - - - - - - - low current transit time at Vbici=0 - - - - - - - - Base width modulation contribution - - - - - - - - SCR width modulation contribution - - - - - - - - Storage time in neutral emitter - - - - - - - - Exponent factor for emitter transit time - - - - - - - - Saturation time at high current densities - - - - - - - - Smoothing factor for current dependence - - - - - - - - Storage time at inverse operation - - - - - - - - Low-field collector resistance under emitter - - - - - - - - Voltage dividing ohmic and satur.region - + + + + + + + + + + + + + + + + + + Error + Errore - - - - - - - - - Punch-through voltage - + + Format Error: +Wrong line start! + Errore di formato: +Inizio linea errato! - - - - - Saturation voltage + + Format Error: +Unknown component! +%1 + +Do you make use of loadable components? - - - - - Total zero-bias BC depletion capacitance - + + Format Error: +Wrong 'component' line format! + Errore di formato: +Formato della linea 'component' errato! - - - - - BC built-in voltage - + + coplanar line + linea coplanare - - - - - BC exponent factor - + + + + + + + + + + + + name of substrate definition + nome della definizione del substrato - - - - Punch-through voltage of BC junction - - - - - - - - Zero-bias external BC depletion capacitance - - - - - - - - External BC built-in voltage - - - - - - - - External BC exponent factor - - - - - - - - Split factor = Cjci0/Cjc0 - + + + + + + + + width of the line + larghezza della linea - - - - Internal base resistance at zero-bias - + + + + width of a gap + larghezza di un'interruzione - - - - - Geometry factor - + + + + + length of the line + lunghezza della linea - - - - - - - - - External base series resistance - Resistenza serie di base esterna + + + + material at the backside of the substrate + materiale sul retro del substrato - - - - - - - - - Emitter series resistance - Resistenza serie emettitore + use approximation instead of precise equation + usa un'approssimazione invece dell'equazione esatta - - - - - - - - - - External collector series resistance - Resistenza serie di collettore esterna + + Coplanar Line + Linea coplanare - - - - - - - - - - Substrate transistor transfer saturation current - + + ideal coupler + accoppiatore ideale - - - - - Substrate transistor transfer current non-ideality factor - + + coupling factor + fattore di accoppiamento - - - - SC saturation current - + phase shift of coupling path in degree + sfasamento dell'accoppiamento in gradi - - - - - SC non-ideality factor - + + Coupler + Accoppiatore - - - - - Zero-bias SC depletion capacitance - + + coplanar gap + interruzione coplanare - - - - - SC built-in voltage - + + width of gap between the two lines + larghezza dell'interruzione tra le due linee - - - - - External SC exponent factor - + + Coplanar Gap + Interruzione Coplanare - - - - - SC punch-through voltage - + + coplanar open + circuito aperto coplanare - - - - - Collector-base isolation (overlap) capacitance - + + width of gap at end of line + larghezza interruzione a fine linea - - - - - Emitter-base oxide capacitance - + + Coplanar Open + Circuito Aperto Coplanare - - - - - Exponent factor - + + coplanar short + corto circuito coplanare - - - - - Prefactor - + + Coplanar Short + Corto Circuito Coplanare - - - - - M^(1-AF) - + + coplanar step + salto impedenza coplanare - - - - - flicker noise exponent factor - + + + + width of line 1 + larghezza della linea 1 - - - - Bandgap-voltage - + + + width of line 2 + larghezza della linea 2 - - - - - Effective emitter bandgap-voltage - + + distance between ground planes + distanza tra piani di massa - - - - - Effective collector bandgap-voltage - + + Coplanar Step + Salto Impedenza Coplanare - - - - - Effective substrate bandgap-voltage + + coupled transmission lines - - - - - Coefficient K1 in T-dependent bandgap equation + + characteristic impedance of even mode - - - - - Coefficient K2 in T-dependent bandgap equation + + characteristic impedance of odd mode - - - - - Frist-order TC of tf0 - + + + + + electrical length of the line + lunghezza elettrica della linea - - - - - Second-order TC of tf0 + + relative dielectric constant of even mode - - - - - - 1/K^2 + + relative dielectric constant of odd mode - - - - - - - - Exponent coefficient in transfer current temperature dependence + attenuation factor per length of even mode - - - - Exponent coefficient in BE junction current temperature dependence + attenuation factor per length of odd mode - - - - - TC of epi-collector diffusivity + + Coupled Transmission Line - - - - - Relative TC of satur.drift velocity - + + D flip flop with asynchron reset + flip flop D con reset asincrono - - - - - Relative TC of vces - + + D-FlipFlop + FlipFlop D - - - - - TC of internal base resistance - + + + dc simulation + simulazione dc - - - - - TC of external base resistance - + + + + + relative tolerance for convergence + tolleranza relativa per la convergenza - - - - TC of external collector resistance - + + + + absolute tolerance for currents + tolleranza assoluta per correnti - - - - TC of emitter resistances - + + + + absolute tolerance for voltages + tolleranza assoluta per tensioni - - - TC of avalanche prefactor - - - - - - - TC of avalanche exponential factor - + put operating points into dataset + metti punti di lavoro nell insieme dati - - - - Flag for self-heating calculation - + + + + maximum number of iterations until error + massimo numero di iterazioni - - - - - - - - - Thermal resistance - Resistenza termica - - - - - - - - - - - K/W - + save subcircuit nodes into dataset + salva nodi sottorcuito nell'insieme dati - - - - Ws/K - + preferred convergence algorithm + algoritmo di convergenza preferito - - - - - Temperature for which parameters are valid - + + + + method for solving the circuit matrix + metodo per risolvere la matrice del circuito - - - - - - - - - C - + + dc block + blocco dc - - - - - Temperature change for particular transistor - + + dc Block + dc Block - - - - - - - - - K - + + dc feed + dc feed - - npn HICUM L0 v1.12 - + + dc Feed + dc Feed - - pnp HICUM L0 v1.12 + + D flip flop with set and reset verilog device - - - HICUM Level 2 v2.22 verilog device - Dispositivo verilog HICUM Level 2 v2.1 {2 ?} {2.22 ?} - - - - - - GICCR constant - Costante GICCR + + + + cross coupled gate transfer function high scaling factor + - - - - - A^2s + + + + + cross coupled gate transfer function low scaling factor - - - - - Zero-bias hole charge - Carica lacuna a zero bias + + + + cross coupled gate delay + - - - - - - - - - Coul + + D-FlipFlop w/ SR - - - - - - High-current correction for 2D and 3D effects - Correzione per correnti elevate per gli effetti 2D e 3D + + diac (bidirectional trigger diode) + - - - - - - Emitter minority charge weighting factor in HBTs - Fattore di pesatura della carica minoritaria di emettitore negli HBT + + + (bidirectional) breakover voltage + - - - - - Collector minority charge weighting factor in HBTs - Fattore di pesatura della carica minoritaria di collettore negli HBT + (bidirectional) breakover current + - - - - - B-E depletion charge weighting factor in HBTs - Fattore di pesatura della carica di svuotamento B-E negli HBT + + + parasitic capacitance + - - - - - - B-C depletion charge weighting factor in HBTs - Fattore di pesatura della carica di svuotamento B-C negli HBT + + + + + + emission coefficient + coefficiente di emissione - - - - - Internal B-E saturation current - Corrente di saturazione B-E interna + + + intrinsic junction resistance + - - - - - - Internal B-E current ideality factor - Fattore di idealità della corrente B-E interna + + Diac + - - - - - - Internal B-E recombination saturation current - Corrente di saturazione della ricombinazione B-E interna + + + digital simulation + simulazione digitale - - - - - - Internal B-E recombination current ideality factor - Fattore di idealità della ricombinazione B-E interna + + type of simulation + tipo simulazione - - - - - Peripheral B-E saturation current - Corrente di saturazione B-E periferica + duration of TimeList simulation + durata della simulazione TimeList - - - - - - Peripheral B-E current ideality factor - Fattore di idealità della corrente B-E periferica + + netlist format + formato netlist - - - - - - Peripheral B-E recombination saturation current - Corrente di saturazione della ricombinazione B-E periferica + + + digital source + generatore digitale - - - - - - Peripheral B-E recombination current ideality factor - Fattore di idealità della ricombinazione B-E periferica + + + number of the port + numero della porta - - - - - Non-ideality factor for III-V HBTs - Fattore di non idealità per HBT III-V + initial output value + valore in uscita iniziale - - - - Base current recombination time constant at B-C barrier for high forward injection - + list of times for changing output value + Elenco istanti di cambiamento dell'uscita - - - - - - Internal B-C saturation current - Corrente di saturazione B-C interna + + diode + diodo - - - - - - Internal B-C current ideality factor - Fattore di idealità della corrente B-C interna + + + + zero-bias junction capacitance + capacità giunzione con polarizzazione zero - - - - - External B-C saturation current - Corrente di saturazione B-C esterna - - - - - - - - External B-C current ideality factor - Fattore di idealità della corrente B-C esterna + + + + + grading coefficient + coefficiente di gradualità - - - - - B-E tunneling saturation current - Corrente di saturazione tunneling B-E + + + + junction potential + potenziale giunzione - - - - - - Exponent factor for tunneling current - Fattore esponenziale per la corrente di tunneling + + linear capacitance + capacità lineare - - - - Specifies the base node connection for the tunneling current - + recombination current parameter + parametro della corrente di ricombinazione - - - - - Avalanche current factor - Fattore corrente di valanga - - - - - - - - Exponent factor for avalanche current - Fattore esponenziale per la corrente di valanga - - - - - - - - Relative TC for FAVL - Coefficiente temperatura relativo per FAVL - - - - - - - - Relative TC for QAVL - Coefficiente temperatura relativo per QAVL - - - - - - - - Zero bias internal base resistance - Resistenza di base interna a polarizzazione zero - - - - - - - - Factor for geometry dependence of emitter current crowding - Fattore per la dipendenza dalla geometria dell'addensamento della corrente di collettore + emission coefficient for Isr + coefficiente di emissione per Isr - - - - - Correction factor for modulation by B-E and B-C space charge layer - Fattore di correzione per la modulazione dallo strato di carica spaziale B-E e B-C + ohmic series resistance + resistenza ohmica serie - - - - - Ratio of HF shunt to total internal capacitance (lateral NQS effect) - + + + transit time + tempo di transito - - - - - Ration of internal to total minority charge - Rapporto carica interna rispetto alla carica minoritaria totale + high-injection knee current (0=infinity) + - - - - - - Forward ideality factor of substrate transfer current - Fattore di idealità della corrente di trasferimento di substrato + + + + reverse breakdown voltage + tensione di rottura inversa - - - - - C-S diode saturation current - Corrente di saturazione diodo C-S + + + current at reverse breakdown voltage + corrente alla tensione di rottura inversa - - - - - - Ideality factor of C-S diode current - Fattore di idealità della corrente per il diodo C-S + + Bv linear temperature coefficient + coefficiente di temperatura lineare per Bv - - - - - Transit time for forward operation of substrate transistor - Tempo di transito per il funzionamento in zona diretta del transistore di substrato - - - - - - - - Substrate series resistance - Resistenza serie substrato - - - - - - - - Substrate shunt capacitance - Capacità parallelo del substrato - - - - - - - - Internal B-E zero-bias depletion capacitance - Capacità di svuotamento B-E interna con polarizzazione zero - - - - - - - - Internal B-E built-in potential - Potenziale di built-in giunzione B-E interna - - - - - - - - Internal B-E grading coefficient - coefficiente di gradualità B-E interno + Rs linear temperature coefficient + coefficiente di temperatura lineare per Rs - - - - - Ratio of maximum to zero-bias value of internal B-E capacitance - Rapporto capacità massima rispetto alla capacità con polarizzazione zero per B-E interna + Tt linear temperature coefficient + coefficiente di temperatura lineare per Tt - - - - - Peripheral B-E zero-bias depletion capacitance - Capacità di svuotamento B-E periferica con polarizzazione zero + Tt quadratic temperature coefficient + coefficiente di temperatura quadratico per Tt - - - - - - Peripheral B-E built-in potential - Potenziale di built-in giunzione B-E periferica + + M linear temperature coefficient + coefficiente di temperatura lineare per M - - - - - - Peripheral B-E grading coefficient - Coefficiente di gradualità B-E periferico + + M quadratic temperature coefficient + coefficiente di temperatura quadratico per M - - - - - - Ratio of maximum to zero-bias value of peripheral B-E capacitance - Rapporto capacità massima rispetto alla capacità con polarizzazione zero per B-E periferica + + + default area for diode + area predefinita per il diodo - - - - - - Internal B-C zero-bias depletion capacitance - Capacità di svuotamento B-C interna con polarizzazione zero + + Diode + Diodo - - - - - - Internal B-C built-in potential - Potenziale di built-in giunzione B-C interna + + data voltage level shifter (digital to analogue) verilog device + - - - - - Internal B-C grading coefficient - coefficiente di gradualità B-C interno + + voltage level + - - - - - Internal B-C punch-through voltage + + time delay - - - - - - External B-C zero-bias depletion capacitance - Capacità di svuotamento B-C esterna con polarizzazione zero + + D2A Level Shifter + - - - - - - External B-C built-in potential - Potenziale di built-in giunzione B-C esterna + + data voltage level shifter (analogue to digital) verilog device + + + + + + + + + + + + + + + + + + + + - - - - - External B-C grading coefficient - coefficiente di gradualità B-C esterno + + + V + - - - - - - External B-C punch-through voltage + + A2D Level Shifter - - - - - Partitioning factor of parasitic B-C cap + + 2to4 demultiplexer verilog device - - - - - Partitioning factor of parasitic B-E cap + + 2to4 Demux - - - - - - C-S zero-bias depletion capacitance - Capacità di svuotamento a zero bias C-S + + 3to8 demultiplexer verilog device + - - - - - - C-S built-in potential - Potenziale di built-in C-S + + 3to8 Demux + - - - - - - C-S grading coefficient - Coefficiente di gradualità C-S + + 4to16 demultiplexer verilog device + - - - - - - C-S punch-through voltage + + 4to16 Demux - - - - - - Low current forward transit time at VBC=0V - Tempo di transito diretto per basse correnti a VBC=0V + + externally controlled voltage source + - - - - - - Time constant for base and B-C space charge layer width modulation - Costante di tempo della modulazione dello strato di carica spaziale per la base e B-C + + + voltage in Volts + tensione in Volts - - - - - Time constant for modelling carrier jam at low VCE + + Externally Controlled Voltage Source - - - - - - Neutral emitter storage time + + EPFL-EKV MOS 2.6 verilog device - - - - - - Exponent factor for current dependence of neutral emitter storage time + + long = 1, short = 2 - - - - - Saturation time constant at high current densities - Costante di tempo della saturazione ad alte densità di corrente + length parameter + + + + + - - - - - Smoothing factor for current dependence of base and collector transit time + + + + + m - - - - - - Partitioning factor for base and collector portion - Fattore di partizione per le parti di base e collettore - - - - - - - - Internal collector resistance at low electric field - resistenza di collettore interna per basso campo elettrico + + Width parameter + - - - - - Voltage separating ohmic and saturation velocity regime - Tensione di confine regime ohmico / regime di saturazione della velocità + parallel multiple device number + - - - - - - Internal C-E saturation voltage - Tensione di saturazione C-E interna + + series multiple device number + - - - - - - Collector punch-through voltage + + gate oxide capacitance per unit area - - - - - - Storage time for inverse operation + + F/m**2 - - - - - - Total parasitic B-E capacitance - Capacità parassita totale B-E + + metallurgical junction depth + - - - - - Total parasitic B-C capacitance - Capacità parassita totale B-C + channel width correction + - - - - - Factor for additional delay time of minority charge - Fattore per tempo di ritardo addizionale della carica minoritaria - - - - - - - - Factor for additional delay time of transfer current - Fattore per tempo di ritardo addizionale della corrente di trasferimento + channel length correction + - - - - - Flag for turning on and off of vertical NQS effect + + long channel threshold voltage - - - - - - Flicker noise coefficient - Coefficiente rumore flicker + + body effect parameter + - - - - - - Flicker noise exponent factor - Fattore esponenziale rumore flicker + + V**(1/2) + - - - - Flag for determining where to tag the flicker noise source + bulk Fermi potential - - - - - - Scaling factor for collector minority charge in direction of emitter width - + + + + transconductance parameter + parametro transconduttanza - - - - - - Scaling factor for collector minority charge in direction of emitter length + + + A/V**2 - - - - - Bandgap voltage extrapolated to 0 K - Tensione di bandgap estrapolata a 0 K + mobility reduction coefficient + + + - - - - - First order relative TC of parameter T0 - Coefficiente di temperatura del prim'ordine del parametro T0 - - - - - - - Second order relative TC of parameter T0 - Coefficiente di temperatura del second'ordine del parametro T0 - - - - - - - - Temperature exponent for RCI0 - Esponente della temperatura per RCI0 + + 1/V + - - - - - Relative TC of saturation drift velocity - CT relativo della velocità di deriva di saturazione + mobility coefficient + + - - - - - Relative TC of VCES - CT relativo di VCES + + V/m + - - - - - - Temperature exponent of internal base resistance - Esponente della temperatura della resistenza di base interna + + + longitudinal critical field + - - - - - - Temperature exponent of external base resistance - Esponente della temperatura della resistenza di base esterna + + depletion length coefficient + - - - - - Temperature exponent of external collector resistance - Esponente della temperatura della resistenza di collettore esterna + narrow-channel effect coefficient + - - - - - - Temperature exponent of emitter resistance - Esponente della temperatura della resistenza di emetttore + + reverse short channel charge density + - - - - - - Temperature exponent of mobility in substrate transistor transit time - Esponente della temperatura per la mobilità nel tempo di transito per il transistore di substrato + + A*s/m**2 + - - - - Effective emitter bandgap voltage + characteristic length - - - - Effective collector bandgap voltage + threshold voltage temperature coefficient - - - - - Effective substrate bandgap voltage + + V/K - - - - - Coefficient K1 in T-dependent band-gap equation + + mobility temperature coefficient - - - - Coefficient K2 in T-dependent band-gap equation + Longitudinal critical field temperature exponent - - - - - Exponent coefficient in B-E junction current temperature dependence + + Ibb temperature coefficient - - - - - - Relative TC of forward current gain for V2.1 model - CT relativo del guadagno in corrente diretto per modello V2.1 + + 1/K + - - - - - Flag for turning on and off self-heating effect + + heavily doped diffusion length - - - - - J/W + + drain/source diffusion sheet resistance - - - - - Flag for compatibility with v2.1 model (0=v2.1) + + Ohm/square - - - - - Temperature at which parameters are specified - temperatura alla quale i parametri sono specificati - - - - - - - - Temperature change w.r.t. chip temperature for particular transistor + source contact resistance - - HICUM L2 v2.22 - HICUM L2 v2.22 + + + + + + + + + + + + + Ohm + Ohm - - HICUM Level 0 v1.2 verilog device - Dispositivo verilog HICUM Level 2 v2.1 {0 ?} {1.2 ?} + + drain contact resistance + - - - - reverse Early voltage (normalization volt.) + + gate to source overlap capacitance - - - - flag for turning on base related critical current + + + + + F/m - - - - Smoothing factor for the d.c. injection width + + gate to drain overlap capacitance - - - - BE charge built-in voltage for d.c. transfer current + + gate to bulk overlap capacitance - - - charge BE exponent factor for d.c. transfer current + first impact ionization coefficient - - - - BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current + + 1/m - - - TC of iqf + + second impact ionization coefficient - - - - Exponent factor for temperature dependent thermal resistance + + saturation voltage factor for impact ionization - - npn HICUM L0 v1.2 + + area related theshold voltage mismatch parameter - - pnp HICUM L0 v1.2 + + V*m - - HICUM Level 0 v1.2g verilog device + + area related gain mismatch parameter - - high-injection roll-off current + + area related body effect mismatch parameter - - TC of iqf (bandgap coefficient of zero bias hole charge) + + sqrt(V)*m - - TC of avalanche prefactor, identical to alfav of Hicum/L2 + + + + + + + + + + + A + + + - TC of avalanche exponential factor, identical to alqav of Hicum/L2 + + + + F - - Emitter part coefficient of the zero bias hole charge temperature variation + + + diode relative area - - Collector part coefficient of the zero bias hole charge temperature variation + + charge partition parameter - Bandgap TC parameter of ver - + + + + + + + parameter measurement temperature + temperatura di misura dei parametri - - Bandgap TC parameter of vef + + + + + + + + Celsius - - Specific recombination current at the BC barrier for high forward injection + + EPFL-EKV NMOS 2.6 - - npn HICUM L0 v1.2g + + EPFL-EKV PMOS 2.6 - - pnp HICUM L0 v1.2g + + equation defined device - - HICUM Level 0 v1.3 verilog device - Dispositivo verilog HICUM Level 2 v2.1 {0 ?} {1.3 ?} + + type of equations + tipo delle equazioni - - Flag for using third order solution for transfer current + + number of branches - - bias dependence for reverse Early voltage - + + + current equation + equazione in corrente - - Flag for turning temperature dependence of tef0 on and off - + + + charge equation + equazione in carica - - TC of Reverse Early voltage + + Equation Defined Device - - TC of AVER - + + equation + equazione - - Bandgap difference between base and BE-junction - + + + + Equation + Equazione - - Frist-order TC of iqfh - + + put result into dataset + metti risultato nell'insieme dati - - Second-order TC of iqfh + + externally driven transient simulation - - npn HICUM L0 v1.3 - + + + integration method + metodo di integrazione - - pnp HICUM L0 v1.3 - + + + order of integration method + ordine del metodo di integrazione - - HICUM Level 2 v2.1 verilog device - Dispositivo verilog HICUM Level 2 v2.1 + + + initial step size in seconds + passo iniziale in secondi - - Partitioning factor of parasitic B-C capacitance - Fattore di partizionamento della capacità parassita B-C + + + minimum step size in seconds + passo minimo in secondi - - Noise factor for internal base resistance - Fattore di rumore per la resistenza di base interna + + + relative tolerance of local truncation error + tolleranza relativa dell'errore di troncamento locale - - HICUM L2 v2.1 - HICUM L2 v2.1 + + + absolute tolerance of local truncation error + tolleranza assoluta dell'errore di troncamento locale - - HICUM Level 2 v2.23 verilog device - Dispositivo verilog HICUM Level 2 v2.1 {2 ?} {2.23 ?} + + + overestimation of local truncation error + sovrastima dell'errore di troncamento locale - - HICUM L2 v2.23 - HICUM L2 v2.23 {2 ?} + + + relax time step raster + rilassa griglia passi temporali - - HICUM Level 2 v2.24 verilog device - Dispositivo verilog HICUM Level 2 v2.1 {2 ?} {2.24 ?} + + + perform an initial DC analysis + esegui una analisi DC iniziale - - HICUM L2 v2.24 - HICUM L2 v2.24 {2 ?} + + + maximum step size in seconds + passo massimo in secondi - - hicumL2V2p31n verilog device + + External transient simulation - - Weight factor for the low current minority charge + + 1bit full adder verilog device - - Parameter describing the slope of hjEi(VBE) + + 1Bit FullAdder - - Smoothing parameter for hjEi(VBE) at high voltage + + 2bit full adder verilog device - - Time constant for modeling carrier jam at low VCE + + 2Bit FullAdder - - Barrier voltage + + gated D latch verilog device - - Normalization parameter + + Gated D-Latch - - Smoothing parameter for barrier voltage + + 4bit Gray to binary converter verilog device - - fitting factor for critical current + + 4Bit Gray2Bin - - Flag for turning on and off of correlated noise implementation - + + ground (reference potential) + terra (potenziale di riferimento) - - Emitter resistance flicker noise coefficient - + + Ground + Terra - - Emitter resistance flicker noise exponent factor - + + gyrator (impedance inverter) + giratore (invertitore di impedenza) - - Bandgap difference between B and B-E junction used for hjEi0 and hf0 - + + gyrator ratio + valore giratore - - Temperature coefficient for ahjEi - + + Gyrator + Giratore - - Temperature coefficient for hjEi0 + + 1bit half adder verilog device - - Temperature coefficient for Rth + + 1Bit HalfAdder - - First order relative TC of parameter Rth - + + Harmonic balance simulation + Simulazione Harmonic Balance - - HICUM L2 V2.31 - + + number of harmonics + numero di armoniche + + + + Harmonic balance + Harmonic balance @@ -12089,7 +7796,7 @@ Formato della linea 'component' errato! - + ERROR: No file name in SPICE component "%1". ERRORE: Nome file assente nel componente SPICE "%1". @@ -12512,11 +8219,15 @@ Formato della linea 'component' errato! Generatore di Corrente Controllato in Tensione - voltage controlled voltage source generatore di tensione controllato in tensione + + + voltage controlled resistor + + resistance gain @@ -12551,7 +8262,7 @@ Formato della linea 'component' errato! - + ERROR: No file name in %1 component "%2". @@ -12714,7 +8425,7 @@ Formato della linea 'component' errato! - + invalid non valido @@ -12826,7 +8537,7 @@ Formato della linea 'component' errato! - + Successfully exported @@ -12849,8 +8560,8 @@ Use PNG, JPEG or SVG graphics! - - + + verilog-a user devices @@ -12909,14 +8620,14 @@ Use PNG, JPEG or SVG graphics! - + diagrams - + paintings @@ -13034,16 +8745,16 @@ Set the Octave location on the application settings. - + - + untitled senza titolo - + Format Error: 'Painting' field is not closed! @@ -13219,17 +8930,17 @@ Campo sconosciuto! ERRORE: Impossibile caricare sottocircuito "%1". - + WARNING: Skipping library component "%1". - - ERROR: Cannot load library component "%1". - ERRORE: Impossibile caricare il componente di libreria "%1". + + ERROR: "%1": Cannot load library component "%2" from "%3" + - + WARNING: Ignore simulation component in subcircuit "%1". ATTENZIONE: Ignorato componente di simulazione nel sottocircuito "%1". @@ -13239,7 +8950,7 @@ Campo sconosciuto! - + ERROR: Only one digital simulation allowed. ERRORE: E' ammessa una sola simulazione digitale. @@ -13366,21 +9077,49 @@ a substrate with lower permittivity and larger height. Cannot save settings file ! + + + Quarter wave filters do not allow low-pass nor high-pass masks + + + QucsActiveFilter - + &File &File - - E&xit - &Esci + + E&xit + &Esci + + + + &View + &Visualizza + + + + &Console + + + + + Enables/disables the filter calculation console + + + + + Console + +Enables/disables the filter calculation console + - + &Help &Aiuto @@ -13400,30 +9139,30 @@ a substrate with lower permittivity and larger height. A proposito di Qt... - - + + Passband attenuation, Ap (dB) - + Stopband attenuation, As (dB) - - Cuttof frequency, Fc (Hz) + + Cutoff frequency, Fc (Hz) - - + + Stopband frequency, Fs (Hz) - + Passband ripple Rp(dB) @@ -13433,7 +9172,7 @@ a substrate with lower permittivity and larger height. - + Filter order @@ -13483,27 +9222,62 @@ a substrate with lower permittivity and larger height. - - Calculation console + + Low Pass - - Filter topology + + General filter amplitude-frequency response - - Filter type: - Tipo di filtro: + + + + Unable to implement filter with such parameters and topology +Change parameters and/or topology and try again! + + + + + + Filter calculation was successful + - LowPass + Filter calculation terminated with error! + + + + + Filter calculation terminated with error + + + + + Lower cutoff frequency, Fl (Hz) + + + + + Copyright (C) 2014, 2015 by + Copyright (C) 2005, 2006 di + {2014, 2015 ?} + + + + Filter topology + Filter type: + Tipo di filtro: + + + High Pass @@ -13529,62 +9303,45 @@ a substrate with lower permittivity and larger height. - + Cauer section - - General amplitude frequency response - - - - - Filter topology preview (one stage) - - - - + Filter parameters - + Transfer function and Topology - - General filter amplidure-frequency response - - - - + Filter topology preview - + Filter calculation console - + + + Ready. + Pronto. + + + Upper cutoff frequency of band-pass/band-stop filter is less than lower. Unable to implement such filter. Change parameters and try again. - - - - Unable to implement filter with such parameters and topology -Change parapeters and/or topology and try again! - - - - + Unable to use Cauer section for Chebyshev or Butterworth frequency response. Try to use another topology. @@ -13600,40 +9357,28 @@ frequency response. Try to use another topology. Function will be implemented in future version - - - -Filter calculation was sucessfull - - - - - -Filter calculation terminated with error - - Upper cutoff frequency, Fu (Hz) - - Lower cuttoff frequency, Fl (Hz) + + Transient bandwidth, TW (Hz) - - Transient bandwidth, TW (Hz) + + Error! - + Active filter design - + About... A proposito di... @@ -13645,13 +9390,7 @@ Active Filter synthesis program - - Copyright (C) 2014 by - Copyright (C) 2005, 2006 di - {2014 ?} - - - + About Qt Informazioni su Qt @@ -13659,7 +9398,7 @@ Active Filter synthesis program QucsApp - + Schematic Schema @@ -13675,42 +9414,42 @@ Active Filter synthesis program - + VHDL Sources Sorgenti VHDL - - + + Verilog Sources Sorgenti Verilog - - + + Verilog-A Sources - - + + Octave Scripts - + Spice Files - + Any File Qualsiasi file - + The schematic search path has been refreshed. @@ -13730,7 +9469,7 @@ Active Filter synthesis program Schemi - + New Nuovo @@ -13815,13 +9554,13 @@ Active Filter synthesis program - + - + @@ -13844,7 +9583,7 @@ Active Filter synthesis program Errore - + Cannot open "%1". Impossibile aprire "%1". @@ -13856,8 +9595,16 @@ Active Filter synthesis program La Libreria è danneggiata. - - + + + + + Search results + + + + + @@ -13876,13 +9623,18 @@ Active Filter synthesis program Informazioni - + Default icon not found: %1.png - + + verilog-a user devices + + + + -port -porta @@ -13893,14 +9645,14 @@ Active Filter synthesis program - + The document contains unsaved changes! Il documento contiene modifiche non salvate! - + Do you want to save the changes before copying? @@ -13911,13 +9663,13 @@ Active Filter synthesis program - + &Save &Salva - + Copy file @@ -13951,31 +9703,31 @@ Active Filter synthesis program - + Warning Attenzione - + This will delete the file permanently! Continue ? Questo canceller�definitivamente il file! Continuare? - + No No - + - + Yes Sì - + unknown @@ -14136,7 +9888,7 @@ Active Filter synthesis program - + @@ -14150,7 +9902,7 @@ Active Filter synthesis program Pronto. - + Creating new text editor... Creazione nuovo editor di testo... @@ -14215,12 +9967,12 @@ Active Filter synthesis program - + Cancel Annulla - + Cannot overwrite an open document Impossibile sovrascrivere un documento aperto @@ -14235,7 +9987,7 @@ Active Filter synthesis program Salvataggio di tutti i file... - + Closing file... Chiusura file... @@ -14259,10 +10011,6 @@ Active Filter synthesis program Open examples directory... - - OK - OK - Printing... @@ -16211,110 +11959,6 @@ Informazioni su Qt di Trolltech Warnings in last simulation! Press F5 Messaggi di avviso nell'ultima simulazione! Premere F5 - - About... - A proposito... - - - Qucs Version - Qucs Versione - - - Quite Universal Circuit Simulator - Quite Universal Circuit Simulator - - - Copyright (C) - Copyright (C) - - - by Michael Margraf - di Michael Margraf - - - Simulator by Stefan Jahn - Simulatore di Stefan Jahn - - - VHDL simulator 'FreeHDL' by Edwin Naroska and Marius Vollmer - Simulatore VHDL 'FreeHDL' di Edwin Naroska e Marius Vollmer - - - Special thanks to Jens Flucke and Raimund Jacob - Ringraziamenti particolari a Jens Flucke e Raimund Jacob - - - Many thanks to Mike Brinson for correcting the VHDL output - Molte grazie a Mike Brinson per aver corretto l'output VHDL - - - GUI improvements by Gopala Krishna A - Miglioramenti alla GUI di Gopala Krishna A - - - Verilog-AMS interface by Helene Parruitte - Interfaccia Verilog-AMS di Helene Parruitte - - - Translations: - Traduzioni: - - - German by Stefan Jahn - Tedesco di Stefan Jahn - - - Polish by Dariusz Pienkowski - Polacco di Dariusz Pienkowski - - - Romanian by Radu Circa - Rumeno di Radu Circa - - - French by Vincent Habchi, F5RCS - Francese di Vincent Habchi, F5RCS - - - Spanish by Jose L. Redrejo Rodriguez - Spagnolo di Jose L. Redrejo Rodriguez - - - Japanese by Toyoyuki Ishikawa - Giapponese di Toyoyuki Ishikawa - - - Italian by Giorgio Luparia and Claudio Girardi - Italiano di Giorgio Luparia e Claudio Girardi - - - Hebrew by Dotan Nahum - Ebraico di Dotan Nahum - - - Swedish by Peter Landgren - Svedese di Peter Landgren - - - Turkish by Onur and Ozgur Cobanoglu - Turco di Onur and Ozgur Cobanoglu - - - Hungarian by Jozsef Bus - Ungherese di Jozsef Bus - - - Russian by Igor Gorbounov - Russo di Igor Gorbounov - - - Czech by Marek Straka - Ceco di Marek Straka - - - Catalan by Antoni Subirats - Catalano di Antoni Subirats - QucsAttenuator @@ -16586,7 +12230,7 @@ Editor di testo minimale per Qucs QucsFilter - + &File &File @@ -16626,7 +12270,7 @@ Editor di testo minimale per Qucs - + Filter type: Tipo di filtro: @@ -16662,29 +12306,29 @@ Editor di testo minimale per Qucs - + Corner frequency: Frequenza di taglio: - + Stop frequency: Frequenza di arresto: - + Stop band frequency: Frequenza banda oscura: - - + + Pass band ripple: Ondulazione in banda passante: - + Stop band attenuation: Attenuazione banda oscura: @@ -16755,19 +12399,19 @@ Programma di sintesi dei filtri - + Result: Risultato: - + Error Errore - + Stop frequency must be greater than start frequency. La frequenza finale deve essere maggiore della frequenza iniziale. @@ -16924,17 +12568,22 @@ Abilita/disabilita indice Informazioni - + Component Selection Selezione Componente - - Search... - Cerca... + + Search Lib Components + - + + Clear + + + + Component Componente @@ -16949,7 +12598,7 @@ Abilita/disabilita indice Mostra modello - + About... Informazioni... @@ -16960,6 +12609,12 @@ Abilita/disabilita indice Gestore Libreria per Qucs + + + Copyright (C) 2011-2015 Qucs Team + + + Copyright (C) 2005 by Michael Margraf @@ -16968,7 +12623,7 @@ Abilita/disabilita indice - + QucsLib Help Aiuto di QucsLib @@ -16988,14 +12643,17 @@ Abilita/disabilita indice Modello - - Search result - Risultato ricerca + + + + + Search results + - + - + @@ -17004,13 +12662,13 @@ Abilita/disabilita indice Errore - + Cannot open "%1". Impossibile aprire "%1". - + @@ -17018,21 +12676,6 @@ Abilita/disabilita indice Library is corrupt. La Libreria è danneggiata. - - - Search Library Component - Cerca Componente di Libreria - - - - Result - Risultato - - - - No appropriate component found. - Nessun componente adatto è stato trovato. - QucsSettingsDialog @@ -18049,7 +13692,7 @@ Modifica il simbolo per questo schema - + Error Errore @@ -18067,7 +13710,7 @@ Set the admsXml location on the application settings. - + ERROR: Cannot create library file "%s". ERRORE: Impossibile creare il file di libreria "%s". @@ -18076,84 +13719,47 @@ Set the admsXml location on the application settings. SearchDialog - - - - Dialog - - - - Text to search for Testo da cercare - - - - Text to replace with Testo da sostituire - - - - Ask before replacing Chiedi conferma prima di sostituire - - - - Case sensitive Case sensitive - - - - Whole words only Solo parole intere - - - - Search backwards Cerca all'indietro - - - - Next - - - - - Close Chiudi @@ -18167,31 +13773,6 @@ Set the admsXml location on the application settings. Search Text Cerca Testo - - - The search result contains all components whose -name contains the search string. All libraries -are included in the search. - Il risultato della ricerca contiene tutti i componenti il cui -nome contiene la stringa cercata. Tutte le librerie -sono incluse nella ricerca. - - - - Search string: - Cerca stringa: - - - - Search - Cerca - - - - - Search result - Risultato ricerca - SettingsDialog @@ -18634,7 +14215,7 @@ sono incluse nella ricerca. SymbolWidget - + Symbol: Simbolo: @@ -18643,6 +14224,13 @@ sono incluse nella ricerca. ! Drag n'Drop me ! + + + Warning: Symbol '%1' missing in Qucs Library. +Drag and Drop may still work. +Please contact the developers. + + TextDoc diff --git a/qucs/translations/qucs_ja.ts b/qucs/translations/qucs_ja.ts index 1a9504dbc4..b3e7bef0e3 100644 --- a/qucs/translations/qucs_ja.ts +++ b/qucs/translations/qucs_ja.ts @@ -3526,62 +3526,6 @@ Resistor color code computation program - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - @@ -3737,10 +3681,6 @@ Resistor color code computation program - - - - polarity @@ -3945,10 +3885,6 @@ Resistor color code computation program - - - - @@ -4089,5709 +4025,1480 @@ Resistor color code computation program ボンドワイア - - bsim3v34nMOS verilog device - + + + + + + + + + + + simulation temperature + シミュレータ時の温度 + + + + capacitor + コンデンサ + capacitance in Farad + 容量(F) + + + initial voltage for transient simulation + トランジェント初期電圧 + + + + + + + + schematic symbol + 回路シンボル + + + + Capacitor + コンデンサ + + + + current controlled current source + 電流制御電流源 + + + + + + forward transfer factor + + + + + + + + + + + + + + + + delay time + 遅延時間 + + + + Current Controlled Current Source + 電流制御電流源 + + + + current controlled voltage source + 電流制御電圧源 + + + + Current Controlled Voltage Source + 電流制御電圧源 + + + + circulator + サーキュレータ + + + + reference impedance of port 1 + ポート1のインピーダンス + + + reference impedance of port 2 + ポート2のインピーダンス + + + reference impedance of port 3 + ポート3のインピーダンス + + + + Circulator + サーキュレータ + + + + coaxial transmission line + 同軸伝送線路 + + + + + relative permittivity of dielectric + 相関誘電率 + + + + + specific resistance of conductor + 導体抵抗率 + + + + + relative permeability of conductor + 導体相関透磁率 + + + inner diameter of shield + シールドの内径 + + + diameter of inner conductor + 内部導体直径 + + + + mechanical length of the line + 線の物理長 + + + + + + loss tangent + 誘電正接 + + + + Coaxial Line + 同軸線路 + + + + 1bit comparator verilog device + 1bit コンパレータ verilogデバイス + + + + 1Bit Comparator + + + + + 2bit comparator verilog device + 2bit コンパレータ verilogデバイス + + + + 2Bit Comparator + + + + + 4bit comparator verilog device + 4bit コンパレータ verilogデバイス + + + + 4Bit Comparator + + + + + number of input ports + 入力ポート数 + + - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - simulation temperature - シミュレータ時の温度 - - - - bsim3v34nMOS - - - - - bsim3v34pMOS verilog device - - - - - bsim3v34pMOS - - - - - bsim4v30nMOS verilog device - - - - - bsim4v30nMOS - - - - - bsim4v30pMOS verilog device - - - - - bsim4v30pMOS - - - - - capacitor - コンデンサ - - - - capacitance in Farad - 容量(F) - - - - initial voltage for transient simulation - トランジェント初期電圧 - - - - - - - - - schematic symbol - 回路シンボル - - - - Capacitor - コンデンサ - - - - current controlled current source - 電流制御電流源 - - - - - - forward transfer factor - - - - - - - - - - - - - - - - delay time - 遅延時間 - - - - Current Controlled Current Source - 電流制御電流源 - - - - current controlled voltage source - 電流制御電圧源 - - - - Current Controlled Voltage Source - 電流制御電圧源 - - - - circulator - サーキュレータ - - - - reference impedance of port 1 - ポート1のインピーダンス - - - - reference impedance of port 2 - ポート2のインピーダンス - - - - reference impedance of port 3 - ポート3のインピーダンス - - - - Circulator - サーキュレータ - - - - coaxial transmission line - 同軸伝送線路 - - - - - relative permittivity of dielectric - 相関誘電率 - - - - - - specific resistance of conductor - 導体抵抗率 - - - - - - relative permeability of conductor - 導体相関透磁率 - - - - inner diameter of shield - シールドの内径 - - - - diameter of inner conductor - 内部導体直径 - - - - - mechanical length of the line - 線の物理長 - - - - - - - loss tangent - 誘電正接 - - - - Coaxial Line - 同軸線路 - - - - 1bit comparator verilog device - 1bit コンパレータ verilogデバイス - - - - 1Bit Comparator - - - - - 2bit comparator verilog device - 2bit コンパレータ verilogデバイス - - - - 2Bit Comparator - - - - - 4bit comparator verilog device - 4bit コンパレータ verilogデバイス - - - - 4Bit Comparator - - - - - number of input ports - 入力ポート数 - - - - - - - voltage of high level - HI信号レベル - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Error - エラー - - - - Format Error: -Wrong line start! - フォーマットエラー: -誤ったライン開始です! - - - - Format Error: -Unknown component! -%1 - -Do you make use of loadable components? - - - - - Format Error: -Wrong 'component' line format! - フォーマットエラー: -誤った 'component' 線フォーマットです! - - - - coplanar line - コプレーナライン - - - - - - - - - - - - - - name of substrate definition - 基材定義名 - - - - - - - - - - - width of the line - 線路の幅 - - - - - - - width of a gap - 間隔の幅 - - - - - - - length of the line - 線路の長さ - - - - - - - material at the backside of the substrate - 基板背面の材料 - - - - use approximation instead of precise equation - 正確な方程式の代わりに近似値を使う - - - - Coplanar Line - コプレーナライン - - - - ideal coupler - 理想カップラ - - - - coupling factor - カップリング係数 - - - - phase shift of coupling path in degree - カップリング位相ずれ(°) - - - - Coupler - カップラ - - - - coplanar gap - コプレーナギャップ - - - - width of gap between the two lines - 2線間のギャップ幅 - - - - Coplanar Gap - コプレーナギャップ - - - - coplanar open - コプレーナオープン - - - - width of gap at end of line - 最終端からのギャップ幅 - - - - Coplanar Open - コプレーナオープン - - - - coplanar short - コプレーナショート - - - - Coplanar Short - コプレーナショート - - - - coplanar step - コプレーナステップ - - - - - - width of line 1 - 線幅1 - - - - - - width of line 2 - 線幅2 - - - - distance between ground planes - グラウンドとの距離 - - - - Coplanar Step - コプレーナステップ - - - - coupled transmission lines - - - - - characteristic impedance of even mode - - - - - characteristic impedance of odd mode - - - - - - - - electrical length of the line - 電気長 - - - - relative dielectric constant of even mode - - - - - relative dielectric constant of odd mode - - - - - attenuation factor per length of even mode - - - - - attenuation factor per length of odd mode - - - - - Coupled Transmission Line - - - - - D flip flop with asynchron reset - Dフリップフロップ（非同期リセット） - - - - D-FlipFlop - Dフリップフロップ - - - - - dc simulation - DCシミュレーション - - - - - - - relative tolerance for convergence - 収束公差 - - - - - - - absolute tolerance for currents - 電流絶対公差 - - - - - - - absolute tolerance for voltages - 電圧絶対公差 - - - - put operating points into dataset - オペレーティングポイントをデータセットに入力 - - - - - - - maximum number of iterations until error - エラーになるまでの最大繰り返し数 - - - - save subcircuit nodes into dataset - サブサーキットノードをデータセットに保存 - - - - preferred convergence algorithm - 優先収束アルゴリズム - - - - - - method for solving the circuit matrix - 回路行列を解くための方式 - - - - dc block - DCブロック - - - - dc Block - DCブロック - - - - dc feed - 電圧付加 - - - - dc Feed - 電圧付加 - - - - D flip flop with set and reset verilog device - セットリセット有りDフリップフロップ verilogデバイス - - - - - - - cross coupled gate transfer function high scaling factor - - - - - - - - cross coupled gate transfer function low scaling factor - - - - - - - - cross coupled gate delay - - - - - D-FlipFlop w/ SR - - - - - diac (bidirectional trigger diode) - ダイアック(双方向トリガダイオード) - - - - - (bidirectional) breakover voltage - - - - - (bidirectional) breakover current - - - - - - - parasitic capacitance - 寄生容量 - - - - - - - - emission coefficient - 放射係数 - - - - - - intrinsic junction resistance - 固有ジャンクション抵抗 - - - - Diac - ダイアック - - - - - digital simulation - デジタルシミュレーション - - - - type of simulation - シミュレーションのタイプ - - - - duration of TimeList simulation - - - - - netlist format - ネットリストファイル - - - - - digital source - デジタルソース - - - - - number of the port - ポートナンバ - - - - initial output value - 初期出力値 - - - - list of times for changing output value - 出力値変更数 - - - - diode - ダイオード - - - - - - zero-bias junction capacitance - ゼロバイアスジャンクション容量 - - - - - - - - grading coefficient - 等級係数 - - - - - - - junction potential - ジャンクション電位 - - - - linear capacitance - 線形容量 - - - - recombination current parameter - - - - - emission coefficient for Isr - - - - - ohmic series resistance - 直列抵抗 - - - - - - transit time - 推移時間 - - - - high-injection knee current (0=infinity) - - - - - - - reverse breakdown voltage - 逆ブレークダウン電圧 - - - - - - current at reverse breakdown voltage - 逆ブレークダウン電圧時の電流 - - - - Bv linear temperature coefficient - Bvリニア温度係数 - - - - Rs linear temperature coefficient - Rsリニア温度係数 - - - - Tt linear temperature coefficient - Ttリニア温度係数 - - - - Tt quadratic temperature coefficient - Tt2次温度計数 - - - - M linear temperature coefficient - Mリニア温度計数 - - - - M quadratic temperature coefficient - M二次温度計数 - - - - - default area for diode - - - - - Diode - ダイオード - - - - data voltage level shifter (digital to analogue) verilog device - データ電圧レベルシフタ（デジタルからアナログ）verilogデバイス - - - - - voltage level - 電圧レベル - - - - - time delay - 遅延時間 - - - - D2A Level Shifter - - - - - data voltage level shifter (analogue to digital) verilog device - データ電圧レベルシフタ（アナログからデジタル）verilogデバイス - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - V - - - - - A2D Level Shifter - - - - - 2to4 demultiplexer verilog device - 2to4 デマルチプレクサ verilogデバイス - - - - 2to4 Demux - - - - - 3to8 demultiplexer verilog device - 3to8 デマルチプレクサ verilogデバイス - - - - 3to8 Demux - - - - - 4to16 demultiplexer verilog device - 4to16 デマルチプレクサ verilogデバイス - - - - 4to16 Demux - - - - - externally controlled voltage source - - - - - - voltage in Volts - 電圧(V) - - - - Externally Controlled Voltage Source - - - - - EPFL-EKV MOS 2.6 verilog device - - - - - long = 1, short = 2 - - - - - length parameter - - - - - - - - - - - - - m - - - - - Width parameter - - - - - parallel multiple device number - - - - - series multiple device number - - - - - gate oxide capacitance per unit area - - - - - F/m**2 - - - - - metallurgical junction depth - - - - - channel width correction - - - - - channel length correction - - - - - long channel threshold voltage - - - - - body effect parameter - - - - - V**(1/2) - - - - - bulk Fermi potential - - - - - - - transconductance parameter - 伝導パラメータ - - - - - A/V**2 - - - - - mobility reduction coefficient - - - - - - - - - - - - - 1/V - - - - - mobility coefficient - - - - - - - V/m - - - - - - longitudinal critical field - - - - - depletion length coefficient - - - - - narrow-channel effect coefficient - - - - - reverse short channel charge density - - - - - A*s/m**2 - - - - - characteristic length - - - - - threshold voltage temperature coefficient - しきい値電圧温度係数 - - - - - - - - - - - - V/K - - - - - mobility temperature coefficient - - - - - Longitudinal critical field temperature exponent - - - - - Ibb temperature coefficient - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1/K - - - - - heavily doped diffusion length - - - - - drain/source diffusion sheet resistance - - - - - Ohm/square - - - - - source contact resistance - ソース接触抵抗 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Ohm - - - - - drain contact resistance - ドレイン接触抵抗 - - - - gate to source overlap capacitance - - - - - - - - F/m - - - - - gate to drain overlap capacitance - - - - - gate to bulk overlap capacitance - - - - - first impact ionization coefficient - - - - - 1/m - - - - - second impact ionization coefficient - - - - - saturation voltage factor for impact ionization - - - - - area related theshold voltage mismatch parameter - - - - - V*m - - - - - area related gain mismatch parameter - - - - - area related body effect mismatch parameter - - - - - sqrt(V)*m - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - F - - - - - - diode relative area - - - - - charge partition parameter - - - - - - - - - - - parameter measurement temperature - 測定温度パラメータ - - - - - - - - - - Celsius - ℃ - - - - EPFL-EKV NMOS 2.6 - - - - - EPFL-EKV PMOS 2.6 - - - - - equation defined device - - - - - type of equations - 方程式の種類 - - - - number of branches - - - - - - current equation - - - - - - charge equation - - - - - Equation Defined Device - 方程式定義済デバイス - - - - equation - 方程式 - - - - - - Equation - 方程式 - - - - put result into dataset - 結果をデータセットに入力 - - - - externally driven transient simulation - - - - - - integration method - - - - - - order of integration method - - - - - - initial step size in seconds - 初期ステップサイズ(s) - - - - - minimum step size in seconds - 最小ステップサイズ(s) - - - - - relative tolerance of local truncation error - 局所端面 相対公差エラー - - - - - absolute tolerance of local truncation error - 局所端面 絶対公差エラー - - - - - overestimation of local truncation error - 局所端面の過大評価エラー - - - - - relax time step raster - - - - - - perform an initial DC analysis - - - - - - maximum step size in seconds - 最大ステップサイズ(s) - - - - External transient simulation - - - - - 1bit full adder verilog device - 1bit フルアダー verilogデバイス - - - - 1Bit FullAdder - - - - - 2bit full adder verilog device - 2bit フルアダー verilogデバイス - - - - 2Bit FullAdder - - - - - gated D latch verilog device - ゲーテッドDラッチ verilogデバイス - - - - Gated D-Latch - - - - - 4bit Gray to binary converter verilog device - 4bit Gray to binary変換 verilogデバイス - - - - 4Bit Gray2Bin - - - - - ground (reference potential) - グラウンド(リファレンス電位) - - - - Ground - グラウンド - - - - gyrator (impedance inverter) - ジャイレータ(インピーダンス変換) - - - - gyrator ratio - ジャイレータ比率 - - - - Gyrator - ジャイレータ - - - - 1bit half adder verilog device - 1bit ハーフアダー verilogデバイス - - - - 1Bit HalfAdder - - - - - Harmonic balance simulation - ハーモニックバランスシミュレーション - - - - number of harmonics - ハーモニクス数 - - - - Harmonic balance - ハーモニックバランス - - - - HBT model by Ferdinand-Braun-Institut (FBH), Berlin - - - - - - - - Ignored - 無視 - - - - Device operating temperature, Celsius - - - - - Thermal resistance, K/W - 熱抵抗[K/W] - - - - - - - - - - - - - Thermal capacitance - 熱容量 - - - - Scaling factor, number of emitter fingers - - - - - Length of emitter finger, m - - - - - Width of emitter finger, m - - - - - Forward saturation current density, A/um^2 - - - - - Forward current emission coefficient - - - - - Forward thermal activation energy, V, (0 == disables temperature dependence) - - - - - B-E leakage saturation current density, A/um^2 - - - - - B-E leakage emission coefficient - - - - - Limiting resistor of B-E leakage diode, Ohm - - - - - B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - 2nd B-E leakage saturation current density, A/um^2 - - - - - 2nd B-E leakage emission coefficient - - - - - 2nd Limiting resistor of B-E leakage diode, Ohm - - - - - 2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Reverse saturation current density, A/um^2 - - - - - Reverse current emission coefficient - - - - - Reverse thermal activation energy, V, (0 == disables temperature dependence) - - - - - Fraction of Cjc that goes to internal base node - - - - - B-C leakage saturation current density, A/um^2 (0. switches off diode) - - - - - B-C leakage emission coefficient (0. switches off diode) - - - - - Limiting resistor of B-C leakage diode, Ohm - - - - - B-C leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Ideal forward beta - - - - - Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence) - - - - - Ideal reverse beta - - - - - Forward Early voltage, V, (0 == disables Early Effect) - - - - - Reverse Early voltage, V, (0 == disables Early Effect) - - - - - Forward high-injection knee current, A, (0 == disables Webster Effect) - - - - - Reverse high-injection knee current, A, (0 == disables Webster Effect) - - - - - C-E breakdown exponent, (0 == disables collector break-down) - - - - - C-E breakdown voltage, V, (0 == disables collector break-down) - - - - - C-E breakdown factor, (0 == disables collector break-down) - - - - - B-E breakdown voltage, V, (0 == disables emitter break-down) - - - - - Ideal reverse transit time, s - 理想逆通過時間[s] - - - - Extrinsic BC diffusion capacitance, F - - - - - Ideal forward transit time, s - 理想的な順通過時間[s] - - - - Temperature coefficient of forward transit time - - - - - Excess transit time coefficient at base push-out - - - - - Smoothing parameter for Thcs - - - - - B-E zero-bias depletion capacitance, F/um^2 - - - - - B-E junction exponential factor - - - - - B-E junction built-in potential, V - - - - - B-C zero-bias depletion capacitance, F/um^2 - - - - - B-C junction exponential factor - - - - - B-C junction built-in potential, V - - - - - not used - 使用しない - - - - Minimum B-C depletion capacitance (Vbc dependence), F/um^2 - - - - - Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction) - - - - - Fraction of Cmin, lower limit of BC capacitance (Ic dependence) - - - - - Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out) - - - - - Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out) - - - - - Slope of Jk at high currents , Ohm*um^2 - - - - - Voltage shift of base push-out onset, V - - - - - Collector resistance, Ohm/finger - - - - - Emitter resistance, Ohm/finger - - - - - Extrinsic base resistance, Ohm/finger - - - - - Inner Base ohmic resistance, Ohm/finger - - - - - Collector inductance, H - コレクタインダクタンス[H] - - - - Emitter inductance, H - エミッタインダクタンス[H] - - - - Base inductance, H - ベースインダクタンス[H] - - - - Extrinsic B-C capacitance, F - - - - - Extrinsic base capacitance, F - - - - - Extrinsic collector capacitance, F - - - - - - Flicker-noise coefficient - - - - - - Flicker-noise exponent - - - - - - Flicker-noise frequency exponent - - - - - Burst noise coefficient - - - - - Burst noise exponent - - - - - Burst noise corner frequency, Hz - - - - - Ambient temperature at which the parameters were determined - - - - - FBH HBT - - - - - HICUM Level 0 v1.12 verilog device - - - - - - - - (Modified) saturation current - （変更）飽和電流 - - - - - - - Non-ideality coefficient of forward collector current - 順コレクタ電流の非理想係数 - - - - - - - Non-ideality coefficient of reverse collector current - 逆コレクタ電流の非理想係数 - - - - - - - - - - - - - - - forward Early voltage (normalization volt.) - - - - - - - - forward d.c. high-injection roll-off current - - - - - - - - inverse d.c. high-injection roll-off current - - - - - - - - high-injection correction current - - - - - - - high-injection correction factor - - - - - - - - BE saturation current - - - - - - - - BE non-ideality factor - - - - - - - - BE recombination saturation current - - - - - - - - BE recombination non-ideality factor - - - - - - - - BC saturation current - BC　飽和電流 - - - - - - - BC non-ideality factor - - - - - - - - Zero-bias BE depletion capacitance - - - - - - - - BE built-in voltage - - - - - - - - BE exponent factor - - - - - - - - Ratio of maximum to zero-bias value - - - - - - - - low current transit time at Vbici=0 - - - - - - - - Base width modulation contribution - - - - - - - - SCR width modulation contribution - - - - - - - - Storage time in neutral emitter - - - - - - - - Exponent factor for emitter transit time - - - - - - - - Saturation time at high current densities - - - - - - - - Smoothing factor for current dependence - - - - - - - - Storage time at inverse operation - + + + + voltage of high level + HI信号レベル - - - - - Low-field collector resistance under emitter - + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + Error + エラー - - - - - Voltage dividing ohmic and satur.region - + + Format Error: +Wrong line start! + フォーマットエラー: +誤ったライン開始です! - - - - - - - - - Punch-through voltage + + Format Error: +Unknown component! +%1 + +Do you make use of loadable components? - - - - - Saturation voltage - 飽和電圧 - - - - - - - Total zero-bias BC depletion capacitance - + + Format Error: +Wrong 'component' line format! + フォーマットエラー: +誤った 'component' 線フォーマットです! - - - - - BC built-in voltage - + + coplanar line + コプレーナライン - - - - - BC exponent factor - + + + + + + + + + + + + name of substrate definition + 基材定義名 - - - - Punch-through voltage of BC junction - - - - - - - - Zero-bias external BC depletion capacitance - - - - - - - - External BC built-in voltage - - - - - - - - External BC exponent factor - - - - - - - - Split factor = Cjci0/Cjc0 - + + + + + + + + width of the line + 線路の幅 - - - - Internal base resistance at zero-bias - + + + + width of a gap + 間隔の幅 - - - - - Geometry factor - + + + + + length of the line + 線路の長さ - - - - - - - - - External base series resistance - + + + + material at the backside of the substrate + 基板背面の材料 - - - - - - - - - Emitter series resistance - + use approximation instead of precise equation + 正確な方程式の代わりに近似値を使う - - - - - - - - - - External collector series resistance - + + Coplanar Line + コプレーナライン - - - - - - - - - - Substrate transistor transfer saturation current - + + ideal coupler + 理想カップラ - - - - - Substrate transistor transfer current non-ideality factor - + + coupling factor + カップリング係数 - - - - SC saturation current - + phase shift of coupling path in degree + カップリング位相ずれ(°) - - - - - SC non-ideality factor - + + Coupler + カップラ - - - - - Zero-bias SC depletion capacitance - + + coplanar gap + コプレーナギャップ - - - - - SC built-in voltage - + + width of gap between the two lines + 2線間のギャップ幅 - - - - - External SC exponent factor - + + Coplanar Gap + コプレーナギャップ - - - - - SC punch-through voltage - + + coplanar open + コプレーナオープン - - - - - Collector-base isolation (overlap) capacitance - + + width of gap at end of line + 最終端からのギャップ幅 - - - - - Emitter-base oxide capacitance - + + Coplanar Open + コプレーナオープン - - - - - Exponent factor - + + coplanar short + コプレーナショート - - - - - Prefactor - + + Coplanar Short + コプレーナショート - - - - - M^(1-AF) - + + coplanar step + コプレーナステップ - - - - - flicker noise exponent factor - + + + + width of line 1 + 線幅1 - - - - Bandgap-voltage - バンドギャップ電圧 - - - - - - - Effective emitter bandgap-voltage - - - - - - - - Effective collector bandgap-voltage - - - - - - - - Effective substrate bandgap-voltage - - - - - - - - Coefficient K1 in T-dependent bandgap equation - + + + width of line 2 + 線幅2 - - - - - Coefficient K2 in T-dependent bandgap equation - + + distance between ground planes + グラウンドとの距離 - - - - - Frist-order TC of tf0 - + + Coplanar Step + コプレーナステップ - - - - - Second-order TC of tf0 + + coupled transmission lines - - - - - - 1/K^2 + + characteristic impedance of even mode - - - - - - - - Exponent coefficient in transfer current temperature dependence + characteristic impedance of odd mode - - - - Exponent coefficient in BE junction current temperature dependence - + + + + electrical length of the line + 電気長 - - - - TC of epi-collector diffusivity + relative dielectric constant of even mode - - - - Relative TC of satur.drift velocity + relative dielectric constant of odd mode - - - - - Relative TC of vces + + attenuation factor per length of even mode - - - - - TC of internal base resistance + + attenuation factor per length of odd mode - - - - - TC of external base resistance + + Coupled Transmission Line - - - - - TC of external collector resistance - + + D flip flop with asynchron reset + Dフリップフロップ（非同期リセット） - - - - - TC of emitter resistances - + + D-FlipFlop + Dフリップフロップ - - - - TC of avalanche prefactor - + + + dc simulation + DCシミュレーション - - - - TC of avalanche exponential factor - + + + + + relative tolerance for convergence + 収束公差 - - - - - Flag for self-heating calculation - + + + + + absolute tolerance for currents + 電流絶対公差 - - - - - - - - - Thermal resistance - 熱抵抗 + + + + absolute tolerance for voltages + 電圧絶対公差 - - - - - - - - - K/W - + + put operating points into dataset + オペレーティングポイントをデータセットに入力 - - - - Ws/K - + + + + maximum number of iterations until error + エラーになるまでの最大繰り返し数 - - - - Temperature for which parameters are valid - + save subcircuit nodes into dataset + サブサーキットノードをデータセットに保存 - - - - - - - - - C - + + preferred convergence algorithm + 優先収束アルゴリズム - - - - - Temperature change for particular transistor - + + + + method for solving the circuit matrix + 回路行列を解くための方式 - - - - - - - - - K - + + dc block + DCブロック - - npn HICUM L0 v1.12 - + + dc Block + DCブロック - - pnp HICUM L0 v1.12 - + + dc feed + 電圧付加 - - HICUM Level 2 v2.22 verilog device - + + dc Feed + 電圧付加 + + + + D flip flop with set and reset verilog device + セットリセット有りDフリップフロップ verilogデバイス - - - - - GICCR constant + + + + cross coupled gate transfer function high scaling factor - - - - - A^2s + + + + + cross coupled gate transfer function low scaling factor - - - - - Zero-bias hole charge + + + + cross coupled gate delay - - - - - - - - - Coul + + D-FlipFlop w/ SR - - - - - - High-current correction for 2D and 3D effects - + + diac (bidirectional trigger diode) + ダイアック(双方向トリガダイオード) - - - - - - Emitter minority charge weighting factor in HBTs + + + (bidirectional) breakover voltage - - - - - Collector minority charge weighting factor in HBTs + (bidirectional) breakover current - - - - - B-E depletion charge weighting factor in HBTs - + + + parasitic capacitance + 寄生容量 - - - - - - B-C depletion charge weighting factor in HBTs - + + + + + + emission coefficient + 放射係数 - - - - - Internal B-E saturation current - 内部ベースエミッタ間飽和電流 + + + intrinsic junction resistance + 固有ジャンクション抵抗 - - - - - - Internal B-E current ideality factor - 内部ベースエミッタ間理想要素 + + Diac + ダイアック - - - - - - Internal B-E recombination saturation current - + + + digital simulation + デジタルシミュレーション - - - - - - Internal B-E recombination current ideality factor - + + type of simulation + シミュレーションのタイプ - - - - - Peripheral B-E saturation current + duration of TimeList simulation - - - - - - Peripheral B-E current ideality factor - + + netlist format + ネットリストファイル - - - - - - Peripheral B-E recombination saturation current - + + + digital source + デジタルソース - - - - - - Peripheral B-E recombination current ideality factor - + + + number of the port + ポートナンバ - - - - - Non-ideality factor for III-V HBTs - + initial output value + 初期出力値 - - - - Base current recombination time constant at B-C barrier for high forward injection - + list of times for changing output value + 出力値変更数 - - - - - - Internal B-C saturation current - 初期ベースコレクタ間飽和電流 + + diode + ダイオード - - - - - - Internal B-C current ideality factor - + + + + zero-bias junction capacitance + ゼロバイアスジャンクション容量 - - - - - External B-C saturation current - + + + + + grading coefficient + 等級係数 - - - - - - External B-C current ideality factor - + + + + + junction potential + ジャンクション電位 + + + + linear capacitance + 線形容量 - - - - - B-E tunneling saturation current + recombination current parameter - - - - - - Exponent factor for tunneling current + + emission coefficient for Isr - - - - Specifies the base node connection for the tunneling current - + ohmic series resistance + 直列抵抗 - - - - - Avalanche current factor - なだれ電流ファクター + + + transit time + 推移時間 - - - - - - Exponent factor for avalanche current + + high-injection knee current (0=infinity) - - - - - - Relative TC for FAVL - + + + + reverse breakdown voltage + 逆ブレークダウン電圧 + + + + + + current at reverse breakdown voltage + 逆ブレークダウン電圧時の電流 + + + + Bv linear temperature coefficient + Bvリニア温度係数 - - - - - - Relative TC for QAVL - + + Rs linear temperature coefficient + Rsリニア温度係数 - - - - - - Zero bias internal base resistance - + + Tt linear temperature coefficient + Ttリニア温度係数 - - - - - - Factor for geometry dependence of emitter current crowding - + + Tt quadratic temperature coefficient + Tt2次温度計数 - - - - - Correction factor for modulation by B-E and B-C space charge layer - + M linear temperature coefficient + Mリニア温度計数 - - - - - Ratio of HF shunt to total internal capacitance (lateral NQS effect) - + M quadratic temperature coefficient + M二次温度計数 - - - - - - Ration of internal to total minority charge + + + default area for diode - - - - - - Forward ideality factor of substrate transfer current - + + Diode + ダイオード - - - - - - C-S diode saturation current - + + data voltage level shifter (digital to analogue) verilog device + データ電圧レベルシフタ（デジタルからアナログ）verilogデバイス - - - - - Ideality factor of C-S diode current - + + voltage level + 電圧レベル - - - - - Transit time for forward operation of substrate transistor - + + time delay + 遅延時間 - - - - - - Substrate series resistance + + D2A Level Shifter - - - - - - Substrate shunt capacitance - + + data voltage level shifter (analogue to digital) verilog device + データ電圧レベルシフタ（アナログからデジタル）verilogデバイス + + + + + + + + + + - - - - - Internal B-E zero-bias depletion capacitance - - - - - - - - Internal B-E built-in potential - - - + + + + + + + - - - - - Internal B-E grading coefficient + + + V - - - - - - Ratio of maximum to zero-bias value of internal B-E capacitance + + A2D Level Shifter - - - - - - Peripheral B-E zero-bias depletion capacitance - + + 2to4 demultiplexer verilog device + 2to4 デマルチプレクサ verilogデバイス - - - - - - Peripheral B-E built-in potential + + 2to4 Demux - - - - - - Peripheral B-E grading coefficient - + + 3to8 demultiplexer verilog device + 3to8 デマルチプレクサ verilogデバイス - - - - - - Ratio of maximum to zero-bias value of peripheral B-E capacitance + + 3to8 Demux - - - - - - Internal B-C zero-bias depletion capacitance - + + 4to16 demultiplexer verilog device + 4to16 デマルチプレクサ verilogデバイス - - - - - - Internal B-C built-in potential + + 4to16 Demux - - - - - - Internal B-C grading coefficient + + externally controlled voltage source - - - - - - Internal B-C punch-through voltage - + + + voltage in Volts + 電圧(V) - - - - - - External B-C zero-bias depletion capacitance + + Externally Controlled Voltage Source - - - - - - External B-C built-in potential + + EPFL-EKV MOS 2.6 verilog device - - - - - - External B-C grading coefficient + + long = 1, short = 2 - - - - - External B-C punch-through voltage + length parameter + - - - - Partitioning factor of parasitic B-C cap - - - - - - - - Partitioning factor of parasitic B-E cap + + + + + + + + m - - - - - - C-S zero-bias depletion capacitance + + Width parameter - - - - - C-S built-in potential + parallel multiple device number - - - - - - C-S grading coefficient + + series multiple device number - - - - - C-S punch-through voltage + gate oxide capacitance per unit area - - - - - - Low current forward transit time at VBC=0V + + F/m**2 - - - - - - Time constant for base and B-C space charge layer width modulation + + metallurgical junction depth - - - - Time constant for modelling carrier jam at low VCE + channel width correction - - - - - Neutral emitter storage time + channel length correction - - - - - Exponent factor for current dependence of neutral emitter storage time - - - - - - - - - Saturation time constant at high current densities + long channel threshold voltage - - - - - Smoothing factor for current dependence of base and collector transit time + body effect parameter - - - - - - Partitioning factor for base and collector portion + + V**(1/2) - - - - - Internal collector resistance at low electric field - - - - - - - - - Voltage separating ohmic and saturation velocity regime - - - - - - - - - Internal C-E saturation voltage + bulk Fermi potential - - - - - Collector punch-through voltage - + + + transconductance parameter + 伝導パラメータ - - - - - - Storage time for inverse operation + + + A/V**2 - - - - - - Total parasitic B-E capacitance + + mobility reduction coefficient + + - - - - - Total parasitic B-C capacitance - - - - - - - - Factor for additional delay time of minority charge + + 1/V - - - - - Factor for additional delay time of transfer current + mobility coefficient - - - - - Flag for turning on and off of vertical NQS effect + + + + V/m - - - - - - Flicker noise coefficient + + + longitudinal critical field - - - - - - Flicker noise exponent factor + + depletion length coefficient - - - - Flag for determining where to tag the flicker noise source + narrow-channel effect coefficient - - - - - - Scaling factor for collector minority charge in direction of emitter width + + reverse short channel charge density - - - - - - Scaling factor for collector minority charge in direction of emitter length + + A*s/m**2 - - - - - Bandgap voltage extrapolated to 0 K + characteristic length - - - - - First order relative TC of parameter T0 - + threshold voltage temperature coefficient + しきい値電圧温度係数 - - - - - - Second order relative TC of parameter T0 + + V/K - - - - - Temperature exponent for RCI0 + mobility temperature coefficient - - - - - Relative TC of saturation drift velocity - - - - - - - - - Relative TC of VCES + Longitudinal critical field temperature exponent - - - - - - Temperature exponent of internal base resistance + + Ibb temperature coefficient - - - - - - Temperature exponent of external base resistance + + 1/K - - - - - Temperature exponent of external collector resistance + heavily doped diffusion length - - - - - - Temperature exponent of emitter resistance + + drain/source diffusion sheet resistance - - - - - - Temperature exponent of mobility in substrate transistor transit time + + Ohm/square - - - - Effective emitter bandgap voltage - + source contact resistance + ソース接触抵抗 + + + + + + + + - - - - Effective collector bandgap voltage + + + + Ohm - - - - - Effective substrate bandgap voltage - + + drain contact resistance + ドレイン接触抵抗 - - - - Coefficient K1 in T-dependent band-gap equation + gate to source overlap capacitance - - - - - Coefficient K2 in T-dependent band-gap equation + + + + + F/m - - - - - Exponent coefficient in B-E junction current temperature dependence + + gate to drain overlap capacitance - - - - - - Relative TC of forward current gain for V2.1 model + + gate to bulk overlap capacitance - - - - Flag for turning on and off self-heating effect + first impact ionization coefficient - - - - - J/W + + 1/m - - - - Flag for compatibility with v2.1 model (0=v2.1) + second impact ionization coefficient - - - - - - - Temperature at which parameters are specified - パラメータ設定時の温度 - - - - - - Temperature change w.r.t. chip temperature for particular transistor - - - - - HICUM L2 v2.22 - - - - - HICUM Level 0 v1.2 verilog device - - - - - - - reverse Early voltage (normalization volt.) + saturation voltage factor for impact ionization - - - flag for turning on base related critical current + area related theshold voltage mismatch parameter - - - - Smoothing factor for the d.c. injection width + + V*m - - - - BE charge built-in voltage for d.c. transfer current + + area related gain mismatch parameter - - - charge BE exponent factor for d.c. transfer current + area related body effect mismatch parameter - - - - BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current + + sqrt(V)*m - - - TC of iqf + + + + + + + + + + + A + + + + + + - - - Exponent factor for temperature dependent thermal resistance + F - - npn HICUM L0 v1.2 + + + diode relative area - pnp HICUM L0 v1.2 + charge partition parameter - - HICUM Level 0 v1.2g verilog device - + + + + + + + + parameter measurement temperature + 測定温度パラメータ - - high-injection roll-off current - + + + + + + + + Celsius + ℃ - - TC of iqf (bandgap coefficient of zero bias hole charge) + + EPFL-EKV NMOS 2.6 - - TC of avalanche prefactor, identical to alfav of Hicum/L2 + + EPFL-EKV PMOS 2.6 - - TC of avalanche exponential factor, identical to alqav of Hicum/L2 + + equation defined device - - Emitter part coefficient of the zero bias hole charge temperature variation - + + type of equations + 方程式の種類 - Collector part coefficient of the zero bias hole charge temperature variation + number of branches - - Bandgap TC parameter of ver + + + current equation - - Bandgap TC parameter of vef + + + charge equation - - Specific recombination current at the BC barrier for high forward injection - + + Equation Defined Device + 方程式定義済デバイス - - npn HICUM L0 v1.2g - + + equation + 方程式 - - pnp HICUM L0 v1.2g - + + + + Equation + 方程式 - - HICUM Level 0 v1.3 verilog device - + + put result into dataset + 結果をデータセットに入力 - - Flag for using third order solution for transfer current + + externally driven transient simulation - - bias dependence for reverse Early voltage + + + integration method - - Flag for turning temperature dependence of tef0 on and off + + + order of integration method - TC of Reverse Early voltage - + + initial step size in seconds + 初期ステップサイズ(s) - TC of AVER - + + minimum step size in seconds + 最小ステップサイズ(s) - - Bandgap difference between base and BE-junction - + + + relative tolerance of local truncation error + 局所端面 相対公差エラー - Frist-order TC of iqfh - - - - - Second-order TC of iqfh - - - - - npn HICUM L0 v1.3 - + + absolute tolerance of local truncation error + 局所端面 絶対公差エラー - - pnp HICUM L0 v1.3 - + + + overestimation of local truncation error + 局所端面の過大評価エラー - - HICUM Level 2 v2.1 verilog device + + + relax time step raster - - Partitioning factor of parasitic B-C capacitance + + + perform an initial DC analysis - - Noise factor for internal base resistance - + + + maximum step size in seconds + 最大ステップサイズ(s) - - HICUM L2 v2.1 + + External transient simulation - - HICUM Level 2 v2.23 verilog device - + + 1bit full adder verilog device + 1bit フルアダー verilogデバイス - - HICUM L2 v2.23 + + 1Bit FullAdder - - HICUM Level 2 v2.24 verilog device - + + 2bit full adder verilog device + 2bit フルアダー verilogデバイス - - HICUM L2 v2.24 + + 2Bit FullAdder - - hicumL2V2p31n verilog device - + + gated D latch verilog device + ゲーテッドDラッチ verilogデバイス - - Weight factor for the low current minority charge + + Gated D-Latch - - Parameter describing the slope of hjEi(VBE) - + + 4bit Gray to binary converter verilog device + 4bit Gray to binary変換 verilogデバイス - - Smoothing parameter for hjEi(VBE) at high voltage + + 4Bit Gray2Bin - - Time constant for modeling carrier jam at low VCE - + + ground (reference potential) + グラウンド(リファレンス電位) - Barrier voltage - - - - - Normalization parameter - - - - - Smoothing parameter for barrier voltage - - - - - fitting factor for critical current - - - - - Flag for turning on and off of correlated noise implementation - + Ground + グラウンド - - Emitter resistance flicker noise coefficient - + + gyrator (impedance inverter) + ジャイレータ(インピーダンス変換) - - Emitter resistance flicker noise exponent factor - + + gyrator ratio + ジャイレータ比率 - - Bandgap difference between B and B-E junction used for hjEi0 and hf0 - + + Gyrator + ジャイレータ - - Temperature coefficient for ahjEi - + + 1bit half adder verilog device + 1bit ハーフアダー verilogデバイス - - Temperature coefficient for hjEi0 + + 1Bit HalfAdder - - Temperature coefficient for Rth - + + Harmonic balance simulation + ハーモニックバランスシミュレーション - - First order relative TC of parameter Rth - + + number of harmonics + ハーモニクス数 - - HICUM L2 V2.31 - + + Harmonic balance + ハーモニックバランス @@ -12082,7 +7789,7 @@ Wrong 'component' line format! - + ERROR: No file name in SPICE component "%1". エラー:SPICE部品"%1"というファイル名がありません. @@ -12505,11 +8212,15 @@ Wrong 'component' line format! 電流制御電圧源 - voltage controlled voltage source 電圧制御電圧源 + + + voltage controlled resistor + + resistance gain @@ -12544,7 +8255,7 @@ Wrong 'component' line format! - + ERROR: No file name in %1 component "%2". エラー:%1に部品¨%2¨というファイル名がありません. @@ -12707,7 +8418,7 @@ Wrong 'component' line format! - + invalid 無効 @@ -12816,7 +8527,7 @@ Wrong 'component' line format! - + Successfully exported @@ -12839,8 +8550,8 @@ Use PNG, JPEG or SVG graphics! - - + + verilog-a user devices @@ -12899,14 +8610,14 @@ Use PNG, JPEG or SVG graphics! - + diagrams - + paintings @@ -13024,16 +8735,16 @@ Set the Octave location on the application settings. - + - + untitled タイトル無し - + Format Error: 'Painting' field is not closed! @@ -13209,17 +8920,17 @@ Unknown field! エラー:サブサーキット"%1"が読み込みできません. - + WARNING: Skipping library component "%1". 警告:　ライブラリ部品"%1"をスキップしています. - - ERROR: Cannot load library component "%1". - エラー:ライブラリ部品"%1"が読み込みできません. + + ERROR: "%1": Cannot load library component "%2" from "%3" + - + WARNING: Ignore simulation component in subcircuit "%1". 警告:サブサーキット中の部品"%1"のシミュレーションは無視されます. @@ -13229,7 +8940,7 @@ Unknown field! - + ERROR: Only one digital simulation allowed. エラー:ディジタルシミュレーションのみ許可されています. @@ -13345,11 +9056,17 @@ a substrate with lower permittivity and larger height. Cannot save settings file ! + + + Quarter wave filters do not allow low-pass nor high-pass masks + + + QucsActiveFilter - + &File ファイル(&F) @@ -13359,7 +9076,29 @@ a substrate with lower permittivity and larger height. 終了(&x) - + + &View + ビュー(&V) + + + + &Console + + + + + Enables/disables the filter calculation console + + + + + Console + +Enables/disables the filter calculation console + + + + &Help ヘルプ(&H) @@ -13379,30 +9118,30 @@ a substrate with lower permittivity and larger height. Qtについて... - - + + Passband attenuation, Ap (dB) - + Stopband attenuation, As (dB) - - Cuttof frequency, Fc (Hz) + + Cutoff frequency, Fc (Hz) - - + + Stopband frequency, Fs (Hz) - + Passband ripple Rp(dB) @@ -13412,7 +9151,7 @@ a substrate with lower permittivity and larger height. - + Filter order @@ -13462,27 +9201,61 @@ a substrate with lower permittivity and larger height. - - Calculation console + + Low Pass - - Filter topology + + General filter amplitude-frequency response - - Filter type: - フィルタタイプ: + + + + Unable to implement filter with such parameters and topology +Change parameters and/or topology and try again! + + + + + + Filter calculation was successful + - LowPass + Filter calculation terminated with error! + + + + + Filter calculation terminated with error + + + + + Lower cutoff frequency, Fl (Hz) + + + + + Copyright (C) 2014, 2015 by + + + + + Filter topology + Filter type: + フィルタタイプ: + + + High Pass @@ -13508,62 +9281,45 @@ a substrate with lower permittivity and larger height. - + Cauer section - - General amplitude frequency response - - - - - Filter topology preview (one stage) - - - - + Filter parameters - + Transfer function and Topology - - General filter amplidure-frequency response + + Filter topology preview - - Filter topology preview + + Filter calculation console - - Filter calculation console + + + Ready. - + Upper cutoff frequency of band-pass/band-stop filter is less than lower. Unable to implement such filter. Change parameters and try again. - - - - Unable to implement filter with such parameters and topology -Change parapeters and/or topology and try again! - - - - + Unable to use Cauer section for Chebyshev or Butterworth frequency response. Try to use another topology. @@ -13579,40 +9335,28 @@ frequency response. Try to use another topology. Function will be implemented in future version - - - -Filter calculation was sucessfull - - - - - -Filter calculation terminated with error - - Upper cutoff frequency, Fu (Hz) - - Lower cuttoff frequency, Fl (Hz) + + Transient bandwidth, TW (Hz) - - Transient bandwidth, TW (Hz) + + Error! - + Active filter design - + About... About... @@ -13624,12 +9368,7 @@ Active Filter synthesis program - - Copyright (C) 2014 by - - - - + About Qt Qtについて @@ -13637,7 +9376,7 @@ Active Filter synthesis program QucsApp - + Schematic 回路図 @@ -13653,42 +9392,42 @@ Active Filter synthesis program - + VHDL Sources VHDLソース - - + + Verilog Sources Verilogソース - - + + Verilog-A Sources - - + + Octave Scripts - + Spice Files - + Any File いずれかのファイル - + The schematic search path has been refreshed. @@ -13708,7 +9447,7 @@ Active Filter synthesis program 回路図 - + New 新規 @@ -13793,13 +9532,13 @@ Active Filter synthesis program - + - + @@ -13822,7 +9561,7 @@ Active Filter synthesis program エラー - + Cannot open "%1". 開けません"%1". @@ -13834,8 +9573,16 @@ Active Filter synthesis program ライブラリが壊れています. - - + + + + + Search results + + + + + @@ -13854,13 +9601,18 @@ Active Filter synthesis program 情報 - + Default icon not found: %1.png - + + verilog-a user devices + + + + -port -port @@ -13871,13 +9623,13 @@ Active Filter synthesis program - + The document contains unsaved changes! ドキュメントに保存されていない変更があります! - + Do you want to save the changes before copying? @@ -13888,13 +9640,13 @@ Active Filter synthesis program - + &Save 保存(&S) - + Copy file @@ -13928,31 +9680,31 @@ Active Filter synthesis program - + Warning 注意 - + This will delete the file permanently! Continue ? 完全にファイルを削除します! 続けますか? - + No いいえ - + - + Yes はい - + unknown @@ -14113,7 +9865,7 @@ Active Filter synthesis program - + @@ -14127,7 +9879,7 @@ Active Filter synthesis program 準備完了. - + Creating new text editor... 新しいテキストエディタを作成しています... @@ -14191,12 +9943,12 @@ Active Filter synthesis program - + Cancel キャンセル - + Cannot overwrite an open document 上書きできません @@ -14211,7 +9963,7 @@ Active Filter synthesis program 全てのファイルを保存しています... - + Closing file... ファイルを閉じています... @@ -14235,10 +9987,6 @@ Active Filter synthesis program Open examples directory... - - OK - OK - Printing... @@ -16191,18 +11939,6 @@ TrolltechによるQtについて Warnings in last simulation! Press F5 最後に行ったシミュレーションに警告があります。F5キーで確認してください - - About... - ...について... - - - Qucs Version - Qucsバージョン - - - Translations: - 翻訳: - QucsAttenuator @@ -16469,7 +12205,7 @@ Very simple text editor for Qucs QucsFilter - + &File ファイル(&F) @@ -16509,7 +12245,7 @@ Very simple text editor for Qucs - + Filter type: フィルタタイプ: @@ -16545,29 +12281,29 @@ Very simple text editor for Qucs - + Corner frequency: コーナー周波数: - + Stop frequency: ストップ周波数: - + Stop band frequency: ストップバンド周波数: - - + + Pass band ripple: 通過帯域リップル: - + Stop band attenuation: ストップバンド減衰量: @@ -16635,19 +12371,19 @@ Filter synthesis program - + Result: 結果: - + Error エラー - + Stop frequency must be greater than start frequency. ストップ周波数はスタート周波数より大きくなければなりません. @@ -16804,17 +12540,22 @@ Enables/disables the table of contents About - + Component Selection 部品選択 - - Search... - サーチ... + + Search Lib Components + - + + Clear + + + + Component 部品 @@ -16829,7 +12570,7 @@ Enables/disables the table of contents モデル表示 - + About... About... @@ -16839,6 +12580,12 @@ Enables/disables the table of contents Qucsライブラリマネージャ + + + Copyright (C) 2011-2015 Qucs Team + + + Copyright (C) 2005 by Michael Margraf @@ -16846,7 +12593,7 @@ Enables/disables the table of contents Copyright (C) 2005 by Michael Margraf - + QucsLib Help QucsLib　ヘルプ @@ -16866,14 +12613,17 @@ Enables/disables the table of contents モデル - - Search result - 結果を検索 + + + + + Search results + - + - + @@ -16882,13 +12632,13 @@ Enables/disables the table of contents エラー - + Cannot open "%1". 開けません"%1". - + @@ -16896,21 +12646,6 @@ Enables/disables the table of contents Library is corrupt. ライブラリが壊れています. - - - Search Library Component - ライブラリ部品検索 - - - - Result - 結果 - - - - No appropriate component found. - 当てはまる部品がありません. - QucsSettingsDialog @@ -17920,7 +13655,7 @@ Edits the symbol for this schematic - + Error エラー @@ -17938,7 +13673,7 @@ Set the admsXml location on the application settings. - + ERROR: Cannot create library file "%s". エラー;　ライブラリ"%s"を作成できません. @@ -17947,83 +13682,46 @@ Set the admsXml location on the application settings. SearchDialog - - - - Dialog - - - - Text to search for テキストを検索 - - - - Text to replace with テキストを置換 - - - - Ask before replacing 問い合わせてから置換 - - - - Case sensitive - - - - Whole words only 全文一致のみ - - - - Search backwards 前方向に検索 - - - - Next - - - - - Close 閉じる @@ -18037,29 +13735,6 @@ Set the admsXml location on the application settings. Search Text テキスト検索 - - - The search result contains all components whose -name contains the search string. All libraries -are included in the search. - 検索結果は検索文字列を含む全ての部品を含んでいます。全てのライブラリが検索対象です. - - - - Search string: - 検索文字列: - - - - Search - 検索 - - - - - Search result - 検索結果 - SettingsDialog @@ -18340,11 +14015,6 @@ are included in the search. Simulation aborted by the user! - - Errors: -------- - エラー:--------- - SpiceDialog @@ -18507,7 +14177,7 @@ are included in the search. SymbolWidget - + Symbol: シンボル: @@ -18516,6 +14186,13 @@ are included in the search. ! Drag n'Drop me ! ! 私をドラッグアンドドロップしてください ! + + + Warning: Symbol '%1' missing in Qucs Library. +Drag and Drop may still work. +Please contact the developers. + + TextDoc diff --git a/qucs/translations/qucs_kk.ts b/qucs/translations/qucs_kk.ts index 94e260ab95..7020021fec 100644 --- a/qucs/translations/qucs_kk.ts +++ b/qucs/translations/qucs_kk.ts @@ -3527,62 +3527,6 @@ Resistor color code computation program - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - @@ -3738,10 +3682,6 @@ Resistor color code computation program - - - - polarity @@ -3946,10 +3886,6 @@ Resistor color code computation program - - - - @@ -4090,5708 +4026,1479 @@ Resistor color code computation program Қосылған Сым - - bsim3v34nMOS verilog device - + + + + + + + + + + + simulation temperature + моделдеу температурасы + + + + capacitor + конденсатор + capacitance in Farad + сыйымдылық Фарадпен өлшегенде + + + initial voltage for transient simulation + өтпелі процесті моделдеу үшін бастапқы кедергі + + + + + + + + schematic symbol + сұлбадағы белгі + + + + Capacitor + Конденсатор + + + + current controlled current source + ток ағынын бақылайтын ток көзінің қорегі + + + + + + forward transfer factor + тура өткізу факторы + + + + + + + + + + + + + + + delay time + кідіріс уақыты + + + + Current Controlled Current Source + Ток ағынын бақылайтын ток көзінің қорегі + + + + current controlled voltage source + ток ағынын бақылайтын кернеу көзінің қорегі + + + + Current Controlled Voltage Source + Ток ағынын бақылайтын кернеу көзінің қорегі + + + + circulator + циркулятор + + + + reference impedance of port 1 + 1 порттың толық тірек кедергісі + + + reference impedance of port 2 + 2 порттың толық тірек кедергісі + + + reference impedance of port 3 + 3 порттың толық тірек кедергісі + + + + Circulator + Циркулятор + + + + coaxial transmission line + коаксальды өткізу арнасы + + + + + relative permittivity of dielectric + диэлектриктің салыстырмалы өтімділігі + + + + + specific resistance of conductor + өткізгіштің арнайы кедергісі + + + + + relative permeability of conductor + конденсатордың өткізгіштік қасиеті + + + inner diameter of shield + экранның ішкі диаметрі + + + diameter of inner conductor + ішкі өткізгіштің диаметрі + + + + mechanical length of the line + арнаның механикалық ұзындығы + + + + + + loss tangent + диэлектрлік шығындардың тангенстік бұрышы + + + + Coaxial Line + Коаксальды сызық + + + + 1bit comparator verilog device + 1-битті логикалық компаратор құрылғысы + + + + 1Bit Comparator + 1 Битті компаратор + + + + 2bit comparator verilog device + 2-битті логикалық компаратор құрылғысы + + + + 2Bit Comparator + 2 Битті компаратор + + + + 4bit comparator verilog device + 4 битті логикалық компаратор құрылғысы + + + + 4Bit Comparator + 4 Битті компаратор + + + + number of input ports + кіріс порттарының саны + + - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - simulation temperature - моделдеу температурасы - - - - bsim3v34nMOS - - - - - bsim3v34pMOS verilog device - - - - - bsim3v34pMOS - - - - - bsim4v30nMOS verilog device - - - - - bsim4v30nMOS - - - - - bsim4v30pMOS verilog device - - - - - bsim4v30pMOS - - - - - capacitor - конденсатор - - - - capacitance in Farad - сыйымдылық Фарадпен өлшегенде - - - - initial voltage for transient simulation - өтпелі процесті моделдеу үшін бастапқы кедергі - - - - - - - - - schematic symbol - сұлбадағы белгі - - - - Capacitor - Конденсатор - - - - current controlled current source - ток ағынын бақылайтын ток көзінің қорегі - - - - - - forward transfer factor - тура өткізу факторы - - - - - - - - - - - - - - - delay time - кідіріс уақыты - - - - Current Controlled Current Source - Ток ағынын бақылайтын ток көзінің қорегі - - - - current controlled voltage source - ток ағынын бақылайтын кернеу көзінің қорегі - - - - Current Controlled Voltage Source - Ток ағынын бақылайтын кернеу көзінің қорегі - - - - circulator - циркулятор - - - - reference impedance of port 1 - 1 порттың толық тірек кедергісі - - - - reference impedance of port 2 - 2 порттың толық тірек кедергісі - - - - reference impedance of port 3 - 3 порттың толық тірек кедергісі - - - - Circulator - Циркулятор - - - - coaxial transmission line - коаксальды өткізу арнасы - - - - - relative permittivity of dielectric - диэлектриктің салыстырмалы өтімділігі - - - - - - specific resistance of conductor - өткізгіштің арнайы кедергісі - - - - - - relative permeability of conductor - конденсатордың өткізгіштік қасиеті - - - - inner diameter of shield - экранның ішкі диаметрі - - - - diameter of inner conductor - ішкі өткізгіштің диаметрі - - - - - mechanical length of the line - арнаның механикалық ұзындығы - - - - - - - loss tangent - диэлектрлік шығындардың тангенстік бұрышы - - - - Coaxial Line - Коаксальды сызық - - - - 1bit comparator verilog device - 1-битті логикалық компаратор құрылғысы - - - - 1Bit Comparator - 1 Битті компаратор - - - - 2bit comparator verilog device - 2-битті логикалық компаратор құрылғысы - - - - 2Bit Comparator - 2 Битті компаратор - - - - 4bit comparator verilog device - 4 битті логикалық компаратор құрылғысы - - - - 4Bit Comparator - 4 Битті компаратор - - - - number of input ports - кіріс порттарының саны - - - - - - - voltage of high level - жоғары деңгейдегі кернеу - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Error - Қате - - - - Format Error: -Wrong line start! - Пішімде қате бар: Жолды бастау дұрыс емес! - - - - Format Error: -Unknown component! -%1 - -Do you make use of loadable components? - - - - - Format Error: -Wrong 'component' line format! - Пішімде қате бар: -'component' жолындағы пішім дұрыс емес! - - - - coplanar line - компланар сызық - - - - - - - - - - - - - - name of substrate definition - әр түрлі салымшалардың аттары - - - - - - - - - - - width of the line - сызықтың ені - - - - - - - width of a gap - интервал ені - - - - - - - length of the line - сызықтың ені - - - - - - - material at the backside of the substrate - салымшаның артындағы материалы - - - - use approximation instead of precise equation - нуктелік басқару орнына жақындату әдісін қолдану - - - - Coplanar Line - Компланар сызық - - - - ideal coupler - әмбебап байланыс құрылғысы - - - - coupling factor - байланыс коэффициенті - - - - phase shift of coupling path in degree - байланыс жолының фазалық ығысуы градуспен өлшегенде - - - - Coupler - Байланыс құрылғысы - - - - coplanar gap - компланар сымдағы үзіліс - - - - width of gap between the two lines - екі арна арасындағы үзіліс ені - - - - Coplanar Gap - Компланар сымдағы үзіліс - - - - coplanar open - тұйықталмаған компланарлы арна - - - - width of gap at end of line - арнаның соңындағы үзіліс ені - - - - Coplanar Open - Тұйықталмаған компланарлы арна - - - - coplanar short - тұйықталған компланарлы арна - - - - Coplanar Short - Тұйықталған компланарлы арна - - - - coplanar step - компланарлы арна енінің ауытқуы - - - - - - width of line 1 - 1 арнаның ені - - - - - - width of line 2 - 2 арнаның ені - - - - distance between ground planes - жер қабаты арасындағы қашықтық - - - - Coplanar Step - Компланарлы арна енінің ауытқуы - - - - coupled transmission lines - - - - - characteristic impedance of even mode - - - - - characteristic impedance of odd mode - - - - - - - - electrical length of the line - сызықтың электрлік ұзындығы - - - - relative dielectric constant of even mode - - - - - relative dielectric constant of odd mode - - - - - attenuation factor per length of even mode - - - - - attenuation factor per length of odd mode - - - - - Coupled Transmission Line - - - - - D flip flop with asynchron reset - Асинхронды өшіруі бар Д-триггері - - - - D-FlipFlop - Д-триггері - - - - - dc simulation - тұрақты токтағы моделдеу - - - - - - - relative tolerance for convergence - конвергенция үшін салыстымалы рұқсат алу - - - - - - - absolute tolerance for currents - ток үшін абсалютті рұқсат алу - - - - - - - absolute tolerance for voltages - кернеу үшін абсалютті рұқсат алу - - - - put operating points into dataset - жұмыс нүктелерін мәліметтер жинағына енгізу (ия,жоқ) - - - - - - - maximum number of iterations until error - қате пайда болғанға дейін итерациялардың максималды саны - - - - save subcircuit nodes into dataset - моделдеу және жұмыс нүктелерінің нәтижелерін мәлімет жинағында сақтау - - - - preferred convergence algorithm - ең ыңғайлы ұқсастық алгоритм - - - - - - method for solving the circuit matrix - сұлбадағы матрицаны шешетін әдіс - - - - dc block - тұрақты тоқтағы бөгет - - - - dc Block - Тұрақты тоқтағы жол айырымы - - - - dc feed - тұрақты токты қамтамасыз ету - - - - dc Feed - Тұрақты токты қамтамасыз ету - - - - D flip flop with set and reset verilog device - Д-триггердің жазу/өшіруі бар логикалық құрылғы - - - - - - - cross coupled gate transfer function high scaling factor - жоғары масштабтың байланыс коэффициентінің беріліс функциясы - - - - - - - cross coupled gate transfer function low scaling factor - төменгі масштабтың байланыс коэффициентінің беріліс функциясы - - - - - - - cross coupled gate delay - қиылысқан байланыстың уақыттық кідірісі - - - - D-FlipFlop w/ SR - Д-триггері сым/SR - - - - diac (bidirectional trigger diode) - диак (екі бағытты триггерлік диод) - - - - - (bidirectional) breakover voltage - (екі бағытты) өтпелі кернеу - - - - (bidirectional) breakover current - (екі бағытты) өтпелі ток ағыны - - - - - - parasitic capacitance - паразиттік сыйымдылық - - - - - - - - emission coefficient - эмиссия коэффициенті - - - - - - intrinsic junction resistance - нақты ішкі кедергі - - - - Diac - Диак - - - - - digital simulation - цифрлық моделдеу - - - - type of simulation - моделдеу типі - - - - duration of TimeList simulation - уақыттық кесте моделінің реттемесі - - - - netlist format - сұлба пішімі - - - - - digital source - цифрлық қорек көзі - - - - - number of the port - порттар саны - - - - initial output value - шығысындағы бастапқы мәні - - - - list of times for changing output value - шығыс мәнінің өзгеруі үшін уақыттық кесте - - - - diode - диод - - - - - - zero-bias junction capacitance - нөлдік ығысу кезіндегі меншікті сыйымдылық - - - - - - - - grading coefficient - әмбебап емес коэффициент - - - - - - - junction potential - өтпелі потенциал - - - - linear capacitance - сызықтық сыйымдылық - - - - recombination current parameter - рекомбинациялық ток - - - - emission coefficient for Isr - Isr диоды үшін идеалдылық эмиссия коэффициенті - - - - ohmic series resistance - тізбектелген кедергі - - - - - - transit time - өту уақыты - - - - high-injection knee current (0=infinity) - Жоғары инжекция кезіндегі шекаралық ток (0=шексіздік) - - - - - - reverse breakdown voltage - кері кемімелі кернеу - - - - - - current at reverse breakdown voltage - кері кемімелі кернеудің ағыны - - - - Bv linear temperature coefficient - Bv сызықтық температуралық коэффициент - - - - Rs linear temperature coefficient - Rs сызықтық температуралық коэффициент - - - - Tt linear temperature coefficient - Tt сызықтық температуралық коэффицент - - - - Tt quadratic temperature coefficient - Tt квадраттық температуралық коэффицент - - - - M linear temperature coefficient - М сызықтық температуралық коэффициент - - - - M quadratic temperature coefficient - М квадраттық температуралық коэффициент - - - - - default area for diode - Диод үшін үндестік бойынша берілген аумақ - - - - Diode - Диод - - - - data voltage level shifter (digital to analogue) verilog device - кернеу мәліметтерінің деңгейінің ауытқу логикалық құрылғысы (цифрлықтан аналогқа өту) - - - - - voltage level - кернеу деңгейі - - - - - time delay - кідіріс уақыты - - - - D2A Level Shifter - D2A Деңгей ауытқуы - - - - data voltage level shifter (analogue to digital) verilog device - кернеу мәліметтерінің деңгейінің ауытқу логикалық құрылғысы (аналогтан цифрлыққа өту) - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - V - Вольт - - - - A2D Level Shifter - A2D деңгей ауытқуы - - - - 2to4 demultiplexer verilog device - 2- де 4 демультиплексор логикалық құрылғысы - - - - 2to4 Demux - 2- де 4 демультиплексор - - - - 3to8 demultiplexer verilog device - 3- те 8 демультиплексор логикалық құрылғысы - - - - 3to8 Demux - 3- де 8 демультиплексор - - - - 4to16 demultiplexer verilog device - 4-те 16 демультиплексор логикалық құрылғысы - - - - 4to16 Demux - 4-те 16 демультиплексор - - - - externally controlled voltage source - - - - - - voltage in Volts - кернеу Вольтпен - - - - Externally Controlled Voltage Source - - - - - EPFL-EKV MOS 2.6 verilog device - EPFL-EKV MOS 2.6 логикалық құрылғы - - - - long = 1, short = 2 - ұзын = 1, қысқа = 2 - - - - length parameter - жолдың параметрі - - - - - - - - - - - - m - м - - - - Width parameter - енінің параметрі - - - - parallel multiple device number - параллель қосқыш құрылғы саны - - - - series multiple device number - қосқыш құрылғылар саны - - - - gate oxide capacitance per unit area - түйектің бірлік ауданға шаққан меншікті сыйымдылығы - - - - F/m**2 - Ф/м² - - - - metallurgical junction depth - металлургиялық тереңдік - - - - channel width correction - арна енін коррекциялау - - - - channel length correction - арна ұзындығын коррекциялау - - - - long channel threshold voltage - ұзақ арнаның табалдырық кернеуі - - - - body effect parameter - денеге әсер етуші параметр - - - - V**(1/2) - В**(1/2) - - - - bulk Fermi potential - Ферми потенциалының өлшемі - - - - - - transconductance parameter - аралық өткізгіштің параметрі - - - - - A/V**2 - А/В² - - - - mobility reduction coefficient - мобилді редукциялық коэффициент - - - - - - - - - - - - 1/V - 1/В - - - - mobility coefficient - мобилді коэффициент - - - - - - V/m - В/м - - - - - longitudinal critical field - критикалық облыстың ұзақтығы - - - - depletion length coefficient - кедейлену коэффициентінің ұзындығы - - - - narrow-channel effect coefficient - арна ұзындығын модуляциялайтын параметр - - - - reverse short channel charge density - кері қосудағы қысқа арна зарядының тығыздығы - - - - A*s/m**2 - A*s/м² - - - - characteristic length - қасиет ұзындығы - - - - threshold voltage temperature coefficient - Табалдырықтық кернеудің температуралық коэффициенті - - - - - - - - - - - - V/K - В/K - - - - mobility temperature coefficient - қозғалмалы температуралық коэффициент - - - - Longitudinal critical field temperature exponent - Критикалық облыс ұзақтығының температуралық көрсеткіші - - - - Ibb temperature coefficient - Ibb температуралық коэффициент - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1/K - 1/К - - - - heavily doped diffusion length - ауырлық күшейтілген диффузия ұзындығы - - - - drain/source diffusion sheet resistance - құйма/бастаудың беттік диффузионды кедергілері - - - - Ohm/square - Ом/шаршы метр - - - - source contact resistance - бастаудың контактылы кедергісі - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Ohm - Ом - - - - drain contact resistance - құйманың контактылы кедергісі - - - - gate to source overlap capacitance - түйектегі бастаудың жабу сыйымдылығы - - - - - - - F/m - Ф/м - - - - gate to drain overlap capacitance - түйектегі құйманың жабу сыйымдылығы - - - - gate to bulk overlap capacitance - түйектегі салымшның жабу сыйымдылығы - - - - first impact ionization coefficient - бірінші ретті ионизациялау коэффициенті - - - - 1/m - 1/м - - - - second impact ionization coefficient - әсері екінші деңгейлі ионизация коэффициенті - - - - saturation voltage factor for impact ionization - ішкі ионизация үшін қаныққан кернеудің коэффициенті - - - - area related theshold voltage mismatch parameter - табалдырықтық кернеудің аумақтық жетіспейтін параметрі - - - - V*m - В*м - - - - area related gain mismatch parameter - күшейткіштің аумақтық жетіспейтін параметрі - - - - area related body effect mismatch parameter - денеге әсер етудің аумақтық жетіспейтін параметрі - - - - sqrt(V)*m - √V*м - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A - А - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - F - Ф - - - - - diode relative area - диодтағы салыстырмалы аумақ - - - - charge partition parameter - зарядталған бөлшектің параметрі - - - - - - - - - - parameter measurement temperature - моделдің параметрлері өлшенген температура - - - - - - - - - - Celsius - Цельсий - - - - EPFL-EKV NMOS 2.6 - EPFL-EKV NMOS 2.6 диоды - - - - EPFL-EKV PMOS 2.6 - EPFL-EKV РMOS 2.6 диоды - - - - equation defined device - математикалық теңдіктіі анықтайтын құрылғы - - - - type of equations - теңдіктің түрі - - - - number of branches - бұтақтар саны - - - - - current equation - ағынның теңдігі - - - - - charge equation - теңдік заряд - - - - Equation Defined Device - Математикалық теңдеуді анықтайтын құрылғы - - - - equation - теңдік - - - - - - Equation - Теңдік - - - - put result into dataset - мәліметтер қорынан нәтижені алу - - - - externally driven transient simulation - - - - - - integration method - интегрирлеу әдісі - - - - - order of integration method - интегрирлеу әдісінің реті - - - - - initial step size in seconds - секундпен шаққанда бастапқы қадам өлшемі - - - - - minimum step size in seconds - секундпен шаққанда минималды қадам өлшемі - - - - - relative tolerance of local truncation error - жергілікті қысқарту қателеріне салыстырмалы рұқсат - - - - - absolute tolerance of local truncation error - жергілікті қысқарту қателеріне абсолютті рұқсат - - - - - overestimation of local truncation error - қысқару қателерін бағалаудағы жоғарғы шегі - - - - - relax time step raster - уақыттық қадамдарда рұқсат етілген қателіктер - - - - - perform an initial DC analysis - бастапқы анализді тұрақты токта орындау - - - - - maximum step size in seconds - секундпен шаққанда максималды қадам өлшемі - - - - External transient simulation - - - - - 1bit full adder verilog device - 1-битті сумматор логикалық құрылғысы - - - - 1Bit FullAdder - 1 Битті Сумматор - - - - 2bit full adder verilog device - 2-битті сумматор логикалық құрылғысы - - - - 2Bit FullAdder - 2 Битті Сумматор - - - - gated D latch verilog device - D-Latch түйек verilog құрылғысы - - - - Gated D-Latch - D-Latch түйегі - - - - 4bit Gray to binary converter verilog device - 4 битті Gray түрлендіргіш логикалық құрылғысы - - - - 4Bit Gray2Bin - 4 биттік Bin2Bin - - - - ground (reference potential) - жер (тірек потенциалы) - - - - Ground - Жер - - - - gyrator (impedance inverter) - Гиратор (толық кедергі түрлендіргіші) - - - - gyrator ratio - Гирация коэффициенті - - - - Gyrator - Гиратор - - - - 1bit half adder verilog device - 1-битті жартылай-қосқыш логикалық құрылғысы - - - - 1Bit HalfAdder - 1 Битті жартылай қосқыш - - - - Harmonic balance simulation - Гармоникалық баланстың моделі - - - - number of harmonics - гармоника саны - - - - Harmonic balance - Гармоникалық баланс - - - - HBT model by Ferdinand-Braun-Institut (FBH), Berlin - Фердинанд - Браун - Институттың HBT моделі (FBH), Берлин - - - - - - - Ignored - Ескерілген жоқ - - - - Device operating temperature, Celsius - Температураны есептейтін құрылғы Цельсий шкаласымен - - - - Thermal resistance, K/W - Жылулық кедергі, К/В - - - - - - - - - - - - - Thermal capacitance - Жылулық сыйымдылық - - - - Scaling factor, number of emitter fingers - Масштабтық коэффициент, эмиттер зоналарының саны - - - - Length of emitter finger, m - Эмиттер зонасының ұзындығы, м - - - - Width of emitter finger, m - Эмиттер зонасының ені, м - - - - Forward saturation current density, A/um^2 - Қаныққан тура бағыттағы токтың тығыздығы, А/мкм² - - - - Forward current emission coefficient - тура бағыттағы токтың эмиссия коэффициенті - - - - Forward thermal activation energy, V, (0 == disables temperature dependence) - Тура қосудағы белсендірілген жылулық энергиясы,(0 == температуралық тәүелділікті өшіру) - - - - B-E leakage saturation current density, A/um^2 - Б-Э шығын тогының қаныққан режимдегі тығыздығы, А/мкм² - - - - B-E leakage emission coefficient - Б-Э эмиссиялық шығын коэффициенті - - - - Limiting resistor of B-E leakage diode, Ohm - Б-Э диоды үшін шектейтін резистор, Ом - - - - B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - Б-Э-дағы шығын тогының жылулық энергиясы, В, (0 == температуралық тәуелділікті өшіреді) - - - - 2nd B-E leakage saturation current density, A/um^2 - екінші ретті Б-Э шығын тогының қаныққан режимдегі тығыздығы, А/мкм² - - - - 2nd B-E leakage emission coefficient - екінші ретті Б-Э эмиссиялық шығын коэффициенті - - - - 2nd Limiting resistor of B-E leakage diode, Ohm - екінші ретті Б-Э диоды үшін шектейтін резистор, Ом - - - - 2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - екінші ретті Б-Э - дағы шығын тогының жылулық энергиясы, В, (0 == температуралық тәуелділікті өшіреді) - - - - Reverse saturation current density, A/um^2 - Қаныққан кері токтың тығыздығы, А/мкм² - - - - Reverse current emission coefficient - кері токтың эмиссия коэффициенті - - - - Reverse thermal activation energy, V, (0 == disables temperature dependence) - Кері қосудағы белсендірілген жылулық энергиясы,(0 == температуралық тәуелділікті өшіру) - - - - Fraction of Cjc that goes to internal base node - Базаның ішкі шығысына келетін Cjc үлесі - - - - B-C leakage saturation current density, A/um^2 (0. switches off diode) - Б-К тогы үшін қанығу режимінде шығын тогының тығыздығы , А/мкм² (0. диодты өшіреді) - - - - B-C leakage emission coefficient (0. switches off diode) - Б-К тогы үшін эмиссия коэффициенті (0. диодты өшіреді) - - - - Limiting resistor of B-C leakage diode, Ohm - Б-К диоды үшін шектейтін резистор, Ом - - - - B-C leakage thermal activation energy, V, (0 == disables temperature dependence) - Б-К-дағы шығын тогының жылулық энергиясы, В, (0 == температуралық тәуелділікті өшіреді) - - - - Ideal forward beta - Өтпелі токтың тура әмбебап коэффициенті - - - - Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence) - Тура қосу кезіндегі күшейтілген токтың температуралық коэффициенті, -1/К, (0 == температуралық коэффициентті өшіру) - - - - Ideal reverse beta - Әмбебап кері бета - - - - Forward Early voltage, V, (0 == disables Early Effect) - Эрли тура бағыттағы кернеуі, В, (0 == Эрли эффектісін өшіру ) - - - - Reverse Early voltage, V, (0 == disables Early Effect) - Эрли кері кернеуі, В, (0 == Эрли эффектісін өшіру ) - - - - Forward high-injection knee current, A, (0 == disables Webster Effect) - Жоғары инжекция үшін шекаралық тура бағыттағы ток, А, (0 == Вебстер эффектін өшіру) - - - - Reverse high-injection knee current, A, (0 == disables Webster Effect) - Жоғары инжекция үшін шекаралық кері ток, А, (0 == Вебстер эффектін өшіру) - - - - C-E breakdown exponent, (0 == disables collector break-down) - К-Э тесілу көрсеткіші , (0 == коллектордың тесілуін өшіреді) - - - - C-E breakdown voltage, V, (0 == disables collector break-down) - К-Э тесілу кернеуі , (0 == коллектордың тесілуін өшіреді) - - - - C-E breakdown factor, (0 == disables collector break-down) - К-Э тесілу факторы , (0 == коллектордың тесілуін өшіреді) - - - - B-E breakdown voltage, V, (0 == disables emitter break-down) - Б-Э үшін тесу кернеуі, В (0 == эмиттердің тесу ығысуы) - - - - Ideal reverse transit time, s - Әмбебап кері өту уақыты, с - - - - Extrinsic BC diffusion capacitance, F - Коллектордың сыртқы диффузионды сыйымдылығы, Ф - - - - Ideal forward transit time, s - тура қосу кезінде ұшып-өтудің әмбебап уақыты, сек - - - - Temperature coefficient of forward transit time - Ұшып өту кезіндегі тура қосудың температуралық коэффициенті - - - - Excess transit time coefficient at base push-out - Базаның кеңеюі кезінде ұшып өтудің қосымша уақыт коэффициенті - - - - Smoothing parameter for Thcs - Thcs үшін тегістендіретін параметр - - - - B-E zero-bias depletion capacitance, F/um^2 - Б-Э нөлдік ығысу кезіндегі сыйымдылық, Ф/мкм² - - - - B-E junction exponential factor - Б-Э үшін көбейткіш экспонента - - - - B-E junction built-in potential, V - Б-Э потенциалдарының контактылы айырымы, В - - - - B-C zero-bias depletion capacitance, F/um^2 - Б-К нөлдік ығысу кезіндегі сыйымдылық, Ф/мкм² - - - - B-C junction exponential factor - Б-К үшін көбейткіш экспонента - - - - B-C junction built-in potential, V - Б-К потенциалдарының контактылы айырымы, В - - - - not used - қолданылмайды - - - - Minimum B-C depletion capacitance (Vbc dependence), F/um^2 - Б-К үшін минималды сыйымдылық (Vbc - тәуелділік), Ф/мкм² - - - - Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction) - Коллектор тогы, Cbc мәні Cmin-ге тең болғанда, А/мкм² (0 == Cbc азайтуды өшіру) - - - - Fraction of Cmin, lower limit of BC capacitance (Ic dependence) - Б-К үшін төменгі шектік сыйымдылық Cmin улесімен (Іc - тәуелділік бойынша) - - - - Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out) - Төменгі кернеуде базаның ұлғаюының бастамасы, Ом*мкм² (0 == баспа қосылуын өшіру) - - - - Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out) - Жоғарғы кернеуде базаның ұлғаюының бастамасы, А/мкм² (0 == баспа қосылуын өшіру) - - - - Slope of Jk at high currents , Ohm*um^2 - Үлкен токтар үшін Jk ауытқуы, Ом*мкм² өлшем бірлігімен - - - - Voltage shift of base push-out onset, V - База кеңеюі кезінде кернеудің ығысуы, В - - - - Collector resistance, Ohm/finger - Коллектор кедергісі, Ом/сызықша өлшем бірлігімен - - - - Emitter resistance, Ohm/finger - Эмиттер кедергісі, Ом/сызықша өлшем бірлігімен - - - - Extrinsic base resistance, Ohm/finger - Базаның сыртқы омдық кедергісі, Ом/сызықша - - - - Inner Base ohmic resistance, Ohm/finger - Базаның ішкі омдық кедергісі, Ом/сызықша - - - - Collector inductance, H - Коллектор индуктивтілігі , Гн - - - - Emitter inductance, H - Эмиттер индуктивтілігі , Гн - - - - Base inductance, H - База индуктивтілігі Гн - - - - Extrinsic B-C capacitance, F - Б-К үшін сыртқы сыйымдылық, Ф - - - - Extrinsic base capacitance, F - База үшін сыртқы сыйымдылық, Ф - - - - Extrinsic collector capacitance, F - Коллектордың сыртқы сыйымдылығы, Ф - - - - - Flicker-noise coefficient - 1/f-шудың коэффициенті - - - - - Flicker-noise exponent - 1/f-шудың деңгей көрсеткіші - - - - - Flicker-noise frequency exponent - 1/f-шудың жиіліктік тәуелділігі - - - - Burst noise coefficient - Бөлшектік шу коэффициенті - - - - Burst noise exponent - Бөлшектік шудың деңгейін көрсететін экспонентасы - - - - Burst noise corner frequency, Hz - Бөлшектік шу үшін шекаралық жиілік, Гц + + + + voltage of high level + жоғары деңгейдегі кернеу + + - Ambient temperature at which the parameters were determined - Моделдің параметрлері анықталған қоршаған ортаның температурасы - - - - FBH HBT - FBH ГБТ - - - - HICUM Level 0 v1.12 verilog device - HICUM Level 0 v1.12 Verilog-моделі - - + + + + + + + + + + + - - - - (Modified) saturation current - (Өзгертілген) қаныққан ток ағыны - - - - - - - Non-ideality coefficient of forward collector current - Коллектор өткеліндегі тура тоқ ағынының әмбебап емес коэффициенті - - - - - - - Non-ideality coefficient of reverse collector current - Коллектор өткеліндегі кері тоқ ағынының әмбебап емес коэффициенті - - - - - - - - - - - - - - - forward Early voltage (normalization volt.) - Эрли тура бағыттағы кернеуі (тұрақталған кернеу) - - - - - - - forward d.c. high-injection roll-off current - тура тұрақты ағында жоғары инжекция кезіндегі шеңберлік емес ток - - - - - - - inverse d.c. high-injection roll-off current - кері тұрақты ағында жоғары инжекция кезіндегі шеңберлік емес ток - - - - - - - high-injection correction current - Жоғары инжекция кезіндегі түзетуші ток ағыны - - - - - - high-injection correction factor - Жоғары инжекция кезіндегі түзетуші фактор - - - - - - - BE saturation current - БЭ үшін қаныққан ток ағыны - - - - - - - BE non-ideality factor - Б-Э үшін әмбебап емес коэффициент - - - - - - - BE recombination saturation current - БЭ үшін рекомбинациялық қаныққан ток - - - - - - - BE recombination non-ideality factor - БЭ үшін рекомбинациялық әмбебап емес коэффициент - - - - - - - BC saturation current - Б-К үшін қаныққан ток ағыны - - - - - - - BC non-ideality factor - Б-К үшін әмбебап емес коэффициент - - - - - - - Zero-bias BE depletion capacitance - Нөлдік ығысу кезіндегі Б-Э өткелінің меншікті сыйымдылығы - - - - - - - BE built-in voltage - БЭ үшін потенциалдар айырымы - - - - - - - BE exponent factor - Б-Э экспоненталық коэффициенті - - - - - - - Ratio of maximum to zero-bias value - Нөлдік ығысу кезіндегі максималды мәннің ішкі сыйымдылыққа қатынасы - - - - - - - low current transit time at Vbici=0 - Төменгі токта ұшып өту уақыты Vбс=0 - - - - - - - Base width modulation contribution - База енінің модуляциясы - - - - - - - SCR width modulation contribution - Силиконмен басқарылатын түзеткіш енінің модуляциясы - - - - - - - Storage time in neutral emitter - Нейтралды эмиттерді сақтау уақыты - - - - - - - Exponent factor for emitter transit time - Эмиттер өту уақыты үшін экспоненталы фактор - - - - - - - Saturation time at high current densities - Токтың жоғарғы тығыздығы үшін қанығу уақыты - - - - - - - Smoothing factor for current dependence - Ток ағынының тәуелділігі үшін тегістейтін фактор - - - - - - - Storage time at inverse operation - Инверсті режимде сақтау уақыты - - - - - - - Low-field collector resistance under emitter - Кіші электр өрісіндегі коллектор үстіндегі эмиттердің кедергісі - - - - - - - Voltage dividing ohmic and satur.region - Қанығу облысымен омдық режимді бөлетін кернеу - - - - - - - - - - - Punch-through voltage - Тесіп-өту кернеуі - - - - - - - Saturation voltage - Қаныққан кернеу - - - - - - - Total zero-bias BC depletion capacitance - толық нөлдік ығысу кезінде база-коллектордың меншікті сыйымдылығы - - - - - - - BC built-in voltage - БК үшін потенциалдар айырымы + + + + + + + + + + + + + + + + + + Error + Қате - - - - - BC exponent factor - Б-К экспоненталық коэффициенті + + Format Error: +Wrong line start! + Пішімде қате бар: Жолды бастау дұрыс емес! - - - - - Punch-through voltage of BC junction - Б-К өткеліндегі тесіп-өту кернеуі + + Format Error: +Unknown component! +%1 + +Do you make use of loadable components? + - - - - - Zero-bias external BC depletion capacitance - нөлдік ығысу кезінде база - коллектор меншікті сыйымдылығы + + Format Error: +Wrong 'component' line format! + Пішімде қате бар: +'component' жолындағы пішім дұрыс емес! - - - - - External BC built-in voltage - Сыртқы Б-К үшін потенциалдарының контактылы айырымы + + coplanar line + компланар сызық - - - - - External BC exponent factor - Б-К сыртқы экспоненталық коэффициенті + + + + + + + + + + + + name of substrate definition + әр түрлі салымшалардың аттары - - - - - Split factor = Cjci0/Cjc0 - Сплит факторы = Cjci0/Cjc0 + + + + + + + + + width of the line + сызықтың ені - - - - Internal base resistance at zero-bias - Нөлдік ығысу кезіндегі базаның ішкі кедергісі + + + + width of a gap + интервал ені - - - - - Geometry factor - Геометриялық көрсеткіш + + + + + length of the line + сызықтың ені - - - - - - - - - External base series resistance - Базаның сыртқы тізбектік кедергісі + + + + material at the backside of the substrate + салымшаның артындағы материалы - - - - - - - - - Emitter series resistance - Эмиттер кедергісі + use approximation instead of precise equation + нуктелік басқару орнына жақындату әдісін қолдану - - - - - - - - - - External collector series resistance - Коллектордың сыртқы тізбектік кедергісі + + Coplanar Line + Компланар сызық - - - - - - - - - - Substrate transistor transfer saturation current - Транзистор салымша өткеліндегі қаныққан тоқ ағыны + + ideal coupler + әмбебап байланыс құрылғысы - - - - - Substrate transistor transfer current non-ideality factor - Транзистор-салымша өткеліндегі тоқ ағынының әмбебап емес коэффициенті + + coupling factor + байланыс коэффициенті - - - - SC saturation current - SC қаныққан ток ағыны + phase shift of coupling path in degree + байланыс жолының фазалық ығысуы градуспен өлшегенде - - - - - SC non-ideality factor - SC әмбебап емес коэффициент + + Coupler + Байланыс құрылғысы - - - - - Zero-bias SC depletion capacitance - Нөлдік ығысу кезіндегі К-П өткелінің меншікті сыйымдылығы + + coplanar gap + компланар сымдағы үзіліс - - - - - SC built-in voltage - SC кернеумен құру + + width of gap between the two lines + екі арна арасындағы үзіліс ені - - - - - External SC exponent factor - Б-К экспоненталық коэффициенті + + Coplanar Gap + Компланар сымдағы үзіліс - - - - - SC punch-through voltage - SC тесіп өту кернеуі + + coplanar open + тұйықталмаған компланарлы арна - - - - - Collector-base isolation (overlap) capacitance - Коллектор-базаның оқшауланған (жартылай жабылған) меншікті сыйымдылығы + + width of gap at end of line + арнаның соңындағы үзіліс ені - - - - - Emitter-base oxide capacitance - Эмиттер-базаның қышқылдық сыйымдылығы + + Coplanar Open + Тұйықталмаған компланарлы арна - - - - - Exponent factor - Көрсеткіштік фактор + + coplanar short + тұйықталған компланарлы арна - - - - - Prefactor - Префактор + + Coplanar Short + Тұйықталған компланарлы арна - - - - - M^(1-AF) - M^(1-AЖ) + + coplanar step + компланарлы арна енінің ауытқуы - - - - - flicker noise exponent factor - 1/f-шудың деңгей көрсеткіші + + + + width of line 1 + 1 арнаның ені - - - - Bandgap-voltage - Тұрақтандырғыш кернеу - - - - - - - Effective emitter bandgap-voltage - Тұрақтандырғыш-кернеудің эмиттердегі әсері + + + width of line 2 + 2 арнаның ені - - - - - Effective collector bandgap-voltage - Тұрақтандырғыш-кернеудің коллектордағы әсері + + distance between ground planes + жер қабаты арасындағы қашықтық - - - - - Effective substrate bandgap-voltage - Тұрақтандырғыш-кернеудің салымшадағы әсері + + Coplanar Step + Компланарлы арна енінің ауытқуы - - - - - Coefficient K1 in T-dependent bandgap equation - Т-тәуелді тұрақтандырғыш теңдеудегі К1 коэффициенті + + coupled transmission lines + - - - - - Coefficient K2 in T-dependent bandgap equation - Т-тәуелді тұрақтандырғыш теңдеудегі К2 коэффициенті + + characteristic impedance of even mode + - - - - - Frist-order TC of tf0 - Бірінші ретті ТС температуралық коэффициент tf0 + + characteristic impedance of odd mode + - - - - - Second-order TC of tf0 - екінші ретті ТС-те tf0 + + + + + electrical length of the line + сызықтың электрлік ұзындығы - - - - - - 1/K^2 - 1/шаршы К + + relative dielectric constant of even mode + - - - - - - - - Exponent coefficient in transfer current temperature dependence - Өтпелі токтың температураға тәуелді көрсеткіштік факторы + relative dielectric constant of odd mode + - - - - Exponent coefficient in BE junction current temperature dependence - БЭ тогының температураға тәуелді көрсеткіштік факторы + attenuation factor per length of even mode + - - - - TC of epi-collector diffusivity - Эпи-коллектордың диффузиялық температуралық тұрақтысы + attenuation factor per length of odd mode + - - - - - Relative TC of satur.drift velocity - Дрейф қанығу жылдамдығының салыстырмалы температуралық коэффициенті + + Coupled Transmission Line + - - - - - Relative TC of vces - vces салыстырмалы температуралық коэффициент + + D flip flop with asynchron reset + Асинхронды өшіруі бар Д-триггері - - - - - TC of internal base resistance - Базаның ішкі тізбектік кедергісінің температуралық тұрақтысы + + D-FlipFlop + Д-триггері - - - - - TC of external base resistance - Базаның сыртқы тізбектік кедергісінің температуралық тұрақтысы + + + dc simulation + тұрақты токтағы моделдеу - - - - - TC of external collector resistance - Коллектордың сыртқы тізбектік кедергісінің температуралық тұрақтысы + + + + + relative tolerance for convergence + конвергенция үшін салыстымалы рұқсат алу - - - - TC of emitter resistances - Эмиттер кедергісінің температуралық тұрақтысы + + + + absolute tolerance for currents + ток үшін абсалютті рұқсат алу - - - TC of avalanche prefactor - Тасқындық ток факторының температуралық тұрақтысы + + + + absolute tolerance for voltages + кернеу үшін абсалютті рұқсат алу - - - - TC of avalanche exponential factor - Тасқындық ток ағынының көрсеткіштік факторының температуралық тұрақтысы + + put operating points into dataset + жұмыс нүктелерін мәліметтер жинағына енгізу (ия,жоқ) - - - - Flag for self-heating calculation - жеке жылулықты есептеу үшін жалауша бағыттауышы + + + + maximum number of iterations until error + қате пайда болғанға дейін итерациялардың максималды саны - - - - - - - - - Thermal resistance - Жылулық кедергі - - - - - - - - - - - K/W - К/Вт + save subcircuit nodes into dataset + моделдеу және жұмыс нүктелерінің нәтижелерін мәлімет жинағында сақтау - - - - Ws/K - Втс/К - - - - - - - Temperature for which parameters are valid - Дұрыс параметрлер үшін температура + preferred convergence algorithm + ең ыңғайлы ұқсастық алгоритм - - - - - - - - - C - Сыйымдылық + + + + method for solving the circuit matrix + сұлбадағы матрицаны шешетін әдіс - - - - - Temperature change for particular transistor - Белгілі транзистор температурасының өзгеруі + + dc block + тұрақты тоқтағы бөгет - - - - - - - - - K - К + + dc Block + Тұрақты тоқтағы жол айырымы - - npn HICUM L0 v1.12 - npn типті HICUM L0 1.12 нұсқасы + + dc feed + тұрақты токты қамтамасыз ету - - pnp HICUM L0 v1.12 - pnp типті HICUM L0 1.12 нұсқасы + + dc Feed + Тұрақты токты қамтамасыз ету - - HICUM Level 2 v2.22 verilog device - HICUM Level 2 v2.22 Verilog-моделі + + D flip flop with set and reset verilog device + Д-триггердің жазу/өшіруі бар логикалық құрылғы - - - - - GICCR constant - GICCR тұрақтысы + + + + cross coupled gate transfer function high scaling factor + жоғары масштабтың байланыс коэффициентінің беріліс функциясы - - - - - A^2s - А^2c + + + + + cross coupled gate transfer function low scaling factor + төменгі масштабтың байланыс коэффициентінің беріліс функциясы - - - - - Zero-bias hole charge - Нөлдік ығысу кезіндегі тесіктердің заряды + + + + cross coupled gate delay + қиылысқан байланыстың уақыттық кідірісі - - - - - - - - - Coul - Коул + + D-FlipFlop w/ SR + Д-триггері сым/SR - - - - - - High-current correction for 2D and 3D effects - 2D және 3D әсерлері үшін улкен токтардағы түзетулер + + diac (bidirectional trigger diode) + диак (екі бағытты триггерлік диод) - - - - - - Emitter minority charge weighting factor in HBTs - ГБТ-да эмиттердегі негізгі емес заряд тасушылардың ауырлық коэффициенті + + + (bidirectional) breakover voltage + (екі бағытты) өтпелі кернеу - - - - - Collector minority charge weighting factor in HBTs - ГБТ-да коллектордағы негізгі емес заряд тасушылардың ауырлық коэффициенті + (bidirectional) breakover current + (екі бағытты) өтпелі ток ағыны - - - - - B-E depletion charge weighting factor in HBTs - ГБТ-да Б-Э заряд тасушылардың ауырлық коэффициенті + + + parasitic capacitance + паразиттік сыйымдылық - - - - - - B-C depletion charge weighting factor in HBTs - ГБТ-да Б-К заряд тасушылардың ауырлық коэффициенті + + + + + + emission coefficient + эмиссия коэффициенті - - - - - Internal B-E saturation current - Б-Э үшін ішкі қаныққан ток ағыны + + + intrinsic junction resistance + нақты ішкі кедергі - - - - - - Internal B-E current ideality factor - Б-Э үшін ішкі токтың әмбебап коэффициенті + + Diac + Диак - - - - - - Internal B-E recombination saturation current - Б-Э үшін ішкі рекомбинациялық қаныққан ток + + + digital simulation + цифрлық моделдеу - - - - - - Internal B-E recombination current ideality factor - Б-Э үшін ішкі рекомбинациялық токтың әмбебап коэффициенті + + type of simulation + моделдеу типі - - - - - Peripheral B-E saturation current - Б-Э үшін перифириялық қаныққан ток + duration of TimeList simulation + уақыттық кесте моделінің реттемесі - - - - - - Peripheral B-E current ideality factor - Перифириялық Б-Э үшін токтың әмбебап коэффициенті + + netlist format + сұлба пішімі - - - - - - Peripheral B-E recombination saturation current - Перифириялық Б-Э үшін рекомбинациялық қаныққан ток + + + digital source + цифрлық қорек көзі - - - - - - Peripheral B-E recombination current ideality factor - Перифириялық Б-Э үшін рекомбинациялық токтың әмбебап коэффициенті + + + number of the port + порттар саны - - - - - Non-ideality factor for III-V HBTs - III-V ГБТ үшін әмбебап емес коэффициент + initial output value + шығысындағы бастапқы мәні - - - - Base current recombination time constant at B-C barrier for high forward injection - Б-К өткеліндегі жоғары инжекция үшін рекомбинациялық тура бағыттағы токтың уақыттық тұрақтысы + list of times for changing output value + шығыс мәнінің өзгеруі үшін уақыттық кесте - - - - - - Internal B-C saturation current - Ішкі Б-К үшін қаныққан ток ағыны + + diode + диод - - - - - - Internal B-C current ideality factor - Б-К үшін ішкі токтың әмбебап коэффициенті + + + + zero-bias junction capacitance + нөлдік ығысу кезіндегі меншікті сыйымдылық - - - - - External B-C saturation current - Б-К үшін сыртқы қаныққан ток ағыны - - - - - - - - External B-C current ideality factor - Б-К үшін сыртқы токтың әмбебап коэффициенті + + + + + grading coefficient + әмбебап емес коэффициент - - - - - B-E tunneling saturation current - БЭ үшін туннелдік қаныққан ток + + + + junction potential + өтпелі потенциал - - - - - - Exponent factor for tunneling current - Туннелдік ток ағынының көрсеткіштік факторы + + linear capacitance + сызықтық сыйымдылық - - - - Specifies the base node connection for the tunneling current - Туннелдік ток үшін базалық байланыстың спецификациясы + recombination current parameter + рекомбинациялық ток - - - - - Avalanche current factor - Ағындық токтың факторы - - - - - - - - Exponent factor for avalanche current - Тасқындық ток ағынының көрсеткіштік факторы + emission coefficient for Isr + Isr диоды үшін идеалдылық эмиссия коэффициенті - - - - - - Relative TC for FAVL - FAVL салыстырмалы температуралық коэффициенті + + ohmic series resistance + тізбектелген кедергі - - - - - - Relative TC for QAVL - QAVL салыстырмалы температуралық коэффициенті + + + + transit time + өту уақыты - - - - - - Zero bias internal base resistance - Нөлдік ығысу кезіндегі базаның ішкі кедергісі + + high-injection knee current (0=infinity) + Жоғары инжекция кезіндегі шекаралық ток (0=шексіздік) - - - - - - Factor for geometry dependence of emitter current crowding - Эмиттерлік токты ығыстырып шығаратын геометриялық тәуелділік факторы + + + + reverse breakdown voltage + кері кемімелі кернеу - - - - - Correction factor for modulation by B-E and B-C space charge layer - Б-Э және Б-К кеңістік зарядының деңгей модуляциясы үшін түзету коэффициенті + + + current at reverse breakdown voltage + кері кемімелі кернеудің ағыны - - - - - - Ratio of HF shunt to total internal capacitance (lateral NQS effect) - ЖЖ толық ішкі сыйымдылықтың шунтирлеуге қатынасы (сыртқы квазистатикалық емес әсер) + + Bv linear temperature coefficient + Bv сызықтық температуралық коэффициент - - - - - Ration of internal to total minority charge - Негізгі емес тасымалдаушы ішкі зарядтың толық қатынасы - - - - - - - - Forward ideality factor of substrate transfer current - Салымша өткеліндегі тура тоқ ағынының әмбебап коэффициенті + Rs linear temperature coefficient + Rs сызықтық температуралық коэффициент - - - - - C-S diode saturation current - К-П өткеліндегі қанығу тогы + Tt linear temperature coefficient + Tt сызықтық температуралық коэффицент - - - - - - Ideality factor of C-S diode current - К-П диоды үшін өтпелі токтың әмбебап коэффициенті + + Tt quadratic temperature coefficient + Tt квадраттық температуралық коэффицент - - - - - Transit time for forward operation of substrate transistor - Тура бағыттағы транзистор салымшасы үшін беріліс уақыты + M linear temperature coefficient + М сызықтық температуралық коэффициент - - - - - - Substrate series resistance - Салымшаның тізбектік кедергісі + + M quadratic temperature coefficient + М квадраттық температуралық коэффициент - - - - - - Substrate shunt capacitance - Салымшаның шунттық сыйымдылығы + + + default area for diode + Диод үшін үндестік бойынша берілген аумақ - - - - - - Internal B-E zero-bias depletion capacitance - Б-Э нөлдік ығысу кезіндегі меншікті сыйымдылық + + Diode + Диод - - - - - - Internal B-E built-in potential - Ішкі Б-Э үшін потенциалдарының контактылы айырымы + + data voltage level shifter (digital to analogue) verilog device + кернеу мәліметтерінің деңгейінің ауытқу логикалық құрылғысы (цифрлықтан аналогқа өту) - - - - - Internal B-E grading coefficient - Б-Э үшін ішкі әмбебап емес коэффициент + + voltage level + кернеу деңгейі - - - - - Ratio of maximum to zero-bias value of internal B-E capacitance - Нөлдік ығысу кезіндегі максималды мәннің ішкі сыйымдылығының Б-Э өлшеміне қатынасы + + time delay + кідіріс уақыты - - - - - - Peripheral B-E zero-bias depletion capacitance - Б-Э нөлдік ығысу кезіндегі перифириялық сыйымдылық + + D2A Level Shifter + D2A Деңгей ауытқуы - - - - - - Peripheral B-E built-in potential - Перифириялы Б-Э потенциалдарының контактылы айырымы + + data voltage level shifter (analogue to digital) verilog device + кернеу мәліметтерінің деңгейінің ауытқу логикалық құрылғысы (аналогтан цифрлыққа өту) + + + + + + + + + + - - - - - Peripheral B-E grading coefficient - Перифириялық Б-Э үшін әмбебап емес коэффициент - - - - - - - - Ratio of maximum to zero-bias value of peripheral B-E capacitance - Нөлдік ығысу кезіндегі максималды мәннің перифириялық сыйымдылықтың Б-Э өлшеміне қатынасы - - - - - - - - Internal B-C zero-bias depletion capacitance - Ішкі Б-К нөлдік ығысу кезіндегі меншікті сыйымдылық + + + + + + + + + + + + V + Вольт - - - - - - Internal B-C built-in potential - Ішкі Б-К үшін потенциалдарының контактылы айырымы + + A2D Level Shifter + A2D деңгей ауытқуы - - - - - - Internal B-C grading coefficient - Б-К үшін ішкі әмбебап емес коэффициент + + 2to4 demultiplexer verilog device + 2- де 4 демультиплексор логикалық құрылғысы - - - - - - Internal B-C punch-through voltage - Ішкі Б-К өткеліндегі тесіп-өту кернеуі + + 2to4 Demux + 2- де 4 демультиплексор - - - - - - External B-C zero-bias depletion capacitance - нөлдік ығысу кезінде база-коллектордың сыртқы сыйымдылығы + + 3to8 demultiplexer verilog device + 3- те 8 демультиплексор логикалық құрылғысы - - - - - - External B-C built-in potential - Сыртқы Б-К үшін потенциалдарының контактылы айырымы + + 3to8 Demux + 3- де 8 демультиплексор - - - - - - External B-C grading coefficient - Б-К үшін сыртқы әмбебап емес коэффициент + + 4to16 demultiplexer verilog device + 4-те 16 демультиплексор логикалық құрылғысы - - - - - - External B-C punch-through voltage - Б-К өткеліндегі сыртқы тесіп-өту кернеуі + + 4to16 Demux + 4-те 16 демультиплексор - - - - - Partitioning factor of parasitic B-C cap - Б-К паразиттік сыйымдылығы үшін бөлгіш фактор + + externally controlled voltage source + - - - - - Partitioning factor of parasitic B-E cap - Б-Э паразиттік сыйымдылығы үшін бөлгіш фактор + + + voltage in Volts + кернеу Вольтпен - - - - - - C-S zero-bias depletion capacitance - Нөлдік ығысу кезіндегі К-П өткелінің меншікті сыйымдылығы + + Externally Controlled Voltage Source + - - - - - - C-S built-in potential - К-П контактылы потенциалдар айырымы + + EPFL-EKV MOS 2.6 verilog device + EPFL-EKV MOS 2.6 логикалық құрылғы - - - - - - C-S grading coefficient - К-П өткеліндегі әмбебап емес коэффициент + + long = 1, short = 2 + ұзын = 1, қысқа = 2 - - - - - C-S punch-through voltage - К-П өткеліндегі тесіп-өту кернеуі + length parameter + жолдың параметрі + - - - - - Low current forward transit time at VBC=0V - Тура бағыттағы төменгі токта ұшып өту уақыты VBC=0 В - - + - - - - - Time constant for base and B-C space charge layer width modulation - Б-К үшін базаның кеңістіктегі зарядының енінің деңгейін модуляциялағандағы уақыттық тұрақтысы - - - - - - Time constant for modelling carrier jam at low VCE - Төменгі VCE кезіндегі тасымалдауыштарды жабуды моделдегендегі уақыт тұрақтысы + + + + + m + м - - - - - - Neutral emitter storage time - Нейтралды эмиттерді сақтау уақыты + + Width parameter + енінің параметрі - - - - - Exponent factor for current dependence of neutral emitter storage time - Токтың нейтралды эмиттердің сақтау уақытына тәуелді көрсеткіштік факторы + parallel multiple device number + параллель қосқыш құрылғы саны - - - - - Saturation time constant at high current densities - Токтың жоғарғы тығыздығы үшін қанығу уақытының тұрақтысы + series multiple device number + қосқыш құрылғылар саны - - - - - - Smoothing factor for current dependence of base and collector transit time - База және коллектор ағынының өту уақытына тәуелді тегістеу факторы + + gate oxide capacitance per unit area + түйектің бірлік ауданға шаққан меншікті сыйымдылығы - - - - - - Partitioning factor for base and collector portion - Базалық және коллекторлық бөліктер үшін бөлгіш фактор + + F/m**2 + Ф/м² - - - - - Internal collector resistance at low electric field - Кіші электр өрісіндегі коллектордың ішкі кедергісі + metallurgical junction depth + металлургиялық тереңдік - - - - - Voltage separating ohmic and saturation velocity regime - Қанығу жылдамдығы режимі мен омдық режимді бөлетін кернеу + channel width correction + арна енін коррекциялау - - - - - Internal C-E saturation voltage - К-Э үшін ішкі қаныққан кернеу + channel length correction + арна ұзындығын коррекциялау - - - - - Collector punch-through voltage - Коллектордағы тесіп-өту кернеуі + long channel threshold voltage + ұзақ арнаның табалдырық кернеуі - - - - - Storage time for inverse operation - Инверсті режимде сақтау уақыты + body effect parameter + денеге әсер етуші параметр - - - - - - Total parasitic B-E capacitance - Б-Э үшін толық паразиттік сыйымдылық + + V**(1/2) + В**(1/2) - - - - - - Total parasitic B-C capacitance - Б-К үшін толық паразиттік сыйымдылық + + bulk Fermi potential + Ферми потенциалының өлшемі - - - - - Factor for additional delay time of minority charge - Негізгі емес заряд тасымалдаушыларды қосымша уақытқа кідіртетін фактор + + + transconductance parameter + аралық өткізгіштің параметрі - - - - - - Factor for additional delay time of transfer current - Өтпелі токты қосымша уақыт кідіртетін фактор + + + A/V**2 + А/В² - - - - Flag for turning on and off of vertical NQS effect - Өшіру және қосу кезіндегі вертикалды NQS әсері үшін бағыттаушы жалауша + mobility reduction coefficient + мобилді редукциялық коэффициент - - - - - - Flicker noise coefficient - 1/f-шудың коэффициенті + + + + + + 1/V + 1/В - - - - - Flicker noise exponent factor - 1/f-шудың деңгей көрсеткіші + mobility coefficient + мобилді коэффициент - - - - - Flag for determining where to tag the flicker noise source - Жанып-өшудің шуының қорек көзін анықтайтын жалауша + + + + V/m + В/м - - - - - - Scaling factor for collector minority charge in direction of emitter width - Эмиттердің ені бағытында коллектордың негізгі емес тасушыларының масштабтық үлкейткіші + + + longitudinal critical field + критикалық облыстың ұзақтығы - - - - - - Scaling factor for collector minority charge in direction of emitter length - Эмиттердің ұзындығы бағытында коллектордың негізгі емес тасушыларының масштабтық үлкейткіші + + depletion length coefficient + кедейлену коэффициентінің ұзындығы - - - - - Bandgap voltage extrapolated to 0 K - Тұрақтандырғыш кернеуі 0 К мәніне экстраполирленген - - - - - - - - First order relative TC of parameter T0 - ТС-нің Т0 параметріне байланысты бірінші реті + narrow-channel effect coefficient + арна ұзындығын модуляциялайтын параметр - - - - - - Second order relative TC of parameter T0 - ТС-нің Т0 параметріне байланысты екінші реті + + reverse short channel charge density + кері қосудағы қысқа арна зарядының тығыздығы - - - - - - Temperature exponent for RCI0 - RCI0 үшін температуралық көрсеткіш + + A*s/m**2 + A*s/м² - - - - - Relative TC of saturation drift velocity - Дрейф қанығу жылдамдығының салыстырмалы температуралық коэффициенті + characteristic length + қасиет ұзындығы - - - - - Relative TC of VCES - VCES салыстырмалы температуралық коэффициент + threshold voltage temperature coefficient + Табалдырықтық кернеудің температуралық коэффициенті - - - - - - Temperature exponent of internal base resistance - Базаның ішкі кедергісінің температуралық көрсеткіші + + V/K + В/K - - - - - Temperature exponent of external base resistance - Базаның сыртқы кедергісінің температуралық көрсеткіші + mobility temperature coefficient + қозғалмалы температуралық коэффициент - - - - - Temperature exponent of external collector resistance - Коллектордың сыртқы кедергісінің температуралық көрсеткіші + Longitudinal critical field temperature exponent + Критикалық облыс ұзақтығының температуралық көрсеткіші - - - - - Temperature exponent of emitter resistance - Эмиттер кедергісінің температуралық көрсеткіші + Ibb temperature coefficient + Ibb температуралық коэффициент - - - - - - Temperature exponent of mobility in substrate transistor transit time - Салымша транзисторының ұшып өтү уақытында температуралық қозғалмалы коэффициент + + 1/K + 1/К - - - - Effective emitter bandgap voltage - Тұрақтандырғыш кернеудің эмиттердегі әсері - - - - - - - Effective collector bandgap voltage - Тұрақтандырғыш кернеудің коллектордағы әсері + heavily doped diffusion length + ауырлық күшейтілген диффузия ұзындығы - - - - Effective substrate bandgap voltage - Тұрақтандырғыш кернеудің салымшадағы әсері + drain/source diffusion sheet resistance + құйма/бастаудың беттік диффузионды кедергілері - - - - - Coefficient K1 in T-dependent band-gap equation - Т-тәуелді тұрақтандырғыш теңдеудегі К1 коэффициенті + + Ohm/square + Ом/шаршы метр - - - - Coefficient K2 in T-dependent band-gap equation - Т-тәуелді тұрақтандырғыш теңдеудегі К2 коэффициенті + source contact resistance + бастаудың контактылы кедергісі - - - - - Exponent coefficient in B-E junction current temperature dependence - Б-Э тогының температураға тәуелді көрсеткіштік факторы + + + + + + + + + + + + + Ohm + Ом - - - - - - Relative TC of forward current gain for V2.1 model - V2.1 моделі үшін тура режимдегі күшейтілген токтың салыстырмалы температуралық коэффициенті + + drain contact resistance + құйманың контактылы кедергісі - - - - Flag for turning on and off self-heating effect - Өшіру және қосу кезіндегі жылулық әсер үшін бағыттаушы жалауша + gate to source overlap capacitance + түйектегі бастаудың жабу сыйымдылығы - - - - - J/W - J/Вт + + + + + F/m + Ф/м - - - - - Flag for compatibility with v2.1 model (0=v2.1) - Сәйкестік жалаушасы v2.1-моделі (0=v2.1) + + gate to drain overlap capacitance + түйектегі құйманың жабу сыйымдылығы - - - - - - Temperature at which parameters are specified - Моделдің параметрлері берілетін температура + + gate to bulk overlap capacitance + түйектегі салымшның жабу сыйымдылығы - - - - - Temperature change w.r.t. chip temperature for particular transistor - Белгілі транзистор үшін оның кристалының температурасына байланысты температураның өзгеруі + first impact ionization coefficient + бірінші ретті ионизациялау коэффициенті - - HICUM L2 v2.22 - HICUM L2 v2.22 нұсқасы + + 1/m + 1/м - - HICUM Level 0 v1.2 verilog device - HICUM Level 0 v1.2 Verilog-моделі + + second impact ionization coefficient + әсері екінші деңгейлі ионизация коэффициенті - - - - reverse Early voltage (normalization volt.) - Эрли кері кернеуі (тұрақталған кернеу) + + saturation voltage factor for impact ionization + ішкі ионизация үшін қаныққан кернеудің коэффициенті - - - flag for turning on base related critical current - базаның критикалық ағыны үшін бағыттаушы жалауша - - - - - - Smoothing factor for the d.c. injection width - тұрақты токтағы инжекция енінің тегістейтін параметрі - - - - - - BE charge built-in voltage for d.c. transfer current - БЭ үшін тұрақты ток кезінде өтпелі кернеудің потенциалдар айырымы + area related theshold voltage mismatch parameter + табалдырықтық кернеудің аумақтық жетіспейтін параметрі - - - - charge BE exponent factor for d.c. transfer current - БЭ үшін тұрақты ток кезінде өтпелі ағынның көрсеткіштік фактор + + V*m + В*м - - - BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current - Өтпелі тұрақты ток кезіндегі (нөлдік ығысу кезіндегі максималды мән) Б-Э үшін сыйымдылық + area related gain mismatch parameter + күшейткіштің аумақтық жетіспейтін параметрі - - - TC of iqf - iqf температура тұрақтысы + + area related body effect mismatch parameter + денеге әсер етудің аумақтық жетіспейтін параметрі - - - - Exponent factor for temperature dependent thermal resistance - Жылулық кедергінің температураға тәуелді көрсеткіштік факторы + + sqrt(V)*m + √V*м + + + + + + + + - npn HICUM L0 v1.2 - npn типті HICUM L0 1.2 нұсқасы - - - - pnp HICUM L0 v1.2 - pnp типті HICUM L0 1.2 нұсқасы - - - - HICUM Level 0 v1.2g verilog device - - - - - high-injection roll-off current - - - - - TC of iqf (bandgap coefficient of zero bias hole charge) - + + A + А - - TC of avalanche prefactor, identical to alfav of Hicum/L2 - + + + + + + + + F + Ф - - TC of avalanche exponential factor, identical to alqav of Hicum/L2 - + + + diode relative area + диодтағы салыстырмалы аумақ - - Emitter part coefficient of the zero bias hole charge temperature variation - + + charge partition parameter + зарядталған бөлшектің параметрі - Collector part coefficient of the zero bias hole charge temperature variation - + + + + + + + parameter measurement temperature + моделдің параметрлері өлшенген температура - - Bandgap TC parameter of ver - + + + + + + + + Celsius + Цельсий - - Bandgap TC parameter of vef - + + EPFL-EKV NMOS 2.6 + EPFL-EKV NMOS 2.6 диоды - - Specific recombination current at the BC barrier for high forward injection - + + EPFL-EKV PMOS 2.6 + EPFL-EKV РMOS 2.6 диоды - - npn HICUM L0 v1.2g - npn типті HICUM L0 1.2g нұсқасы {0 ?} + + equation defined device + математикалық теңдіктіі анықтайтын құрылғы - - pnp HICUM L0 v1.2g - pnp типті HICUM L0 1.2g нұсқасы {0 ?} + + type of equations + теңдіктің түрі - - HICUM Level 0 v1.3 verilog device - HICUM Level 2 v2.23 Verilog-моделі {0 ?} {1.3 ?} + + number of branches + бұтақтар саны - - Flag for using third order solution for transfer current - + + + current equation + ағынның теңдігі - - bias dependence for reverse Early voltage - + + + charge equation + теңдік заряд - - Flag for turning temperature dependence of tef0 on and off - + + Equation Defined Device + Математикалық теңдеуді анықтайтын құрылғы - - TC of Reverse Early voltage - + + equation + теңдік - - TC of AVER - + + + + Equation + Теңдік - - Bandgap difference between base and BE-junction - + + put result into dataset + мәліметтер қорынан нәтижені алу - - Frist-order TC of iqfh + + externally driven transient simulation - - Second-order TC of iqfh - + + + integration method + интегрирлеу әдісі - - npn HICUM L0 v1.3 - npn типті HICUM L0 1.3 нұсқасы {0 ?} + + + order of integration method + интегрирлеу әдісінің реті - - pnp HICUM L0 v1.3 - pnp типті HICUM L0 1.3 нұсқасы {0 ?} + + + initial step size in seconds + секундпен шаққанда бастапқы қадам өлшемі - - HICUM Level 2 v2.1 verilog device - HICUM Level 2 v2.21 Verilog-моделі + + + minimum step size in seconds + секундпен шаққанда минималды қадам өлшемі - - Partitioning factor of parasitic B-C capacitance - Б-К паразиттік сыйымдылығы үшін бөлгіш фактор + + + relative tolerance of local truncation error + жергілікті қысқарту қателеріне салыстырмалы рұқсат - - Noise factor for internal base resistance - Базаның ішкі кедергісі үшін шу коэффициенті + + + absolute tolerance of local truncation error + жергілікті қысқарту қателеріне абсолютті рұқсат - - HICUM L2 v2.1 - HICUM L2 v2.1 нұсқасы + + + overestimation of local truncation error + қысқару қателерін бағалаудағы жоғарғы шегі - - HICUM Level 2 v2.23 verilog device - HICUM Level 2 v2.23 Verilog-моделі + + + relax time step raster + уақыттық қадамдарда рұқсат етілген қателіктер - - HICUM L2 v2.23 - HICUM L2 v2.23 нұсқасы + + + perform an initial DC analysis + бастапқы анализді тұрақты токта орындау - - HICUM Level 2 v2.24 verilog device - HICUM Level 2 v2.23 Verilog-моделі {2 ?} {2.24 ?} + + + maximum step size in seconds + секундпен шаққанда максималды қадам өлшемі - - HICUM L2 v2.24 - HICUM L2 v2.24 нұсқасы {2 ?} + + External transient simulation + - - hicumL2V2p31n verilog device - + + 1bit full adder verilog device + 1-битті сумматор логикалық құрылғысы - - Weight factor for the low current minority charge - + + 1Bit FullAdder + 1 Битті Сумматор - - Parameter describing the slope of hjEi(VBE) - + + 2bit full adder verilog device + 2-битті сумматор логикалық құрылғысы - - Smoothing parameter for hjEi(VBE) at high voltage - + + 2Bit FullAdder + 2 Битті Сумматор - - Time constant for modeling carrier jam at low VCE - + + gated D latch verilog device + D-Latch түйек verilog құрылғысы - - Barrier voltage - + + Gated D-Latch + D-Latch түйегі - - Normalization parameter - + + 4bit Gray to binary converter verilog device + 4 битті Gray түрлендіргіш логикалық құрылғысы - - Smoothing parameter for barrier voltage - + + 4Bit Gray2Bin + 4 биттік Bin2Bin - - fitting factor for critical current - + + ground (reference potential) + жер (тірек потенциалы) - - Flag for turning on and off of correlated noise implementation - + + Ground + Жер - - Emitter resistance flicker noise coefficient - + + gyrator (impedance inverter) + Гиратор (толық кедергі түрлендіргіші) - - Emitter resistance flicker noise exponent factor - + + gyrator ratio + Гирация коэффициенті - - Bandgap difference between B and B-E junction used for hjEi0 and hf0 - + + Gyrator + Гиратор - - Temperature coefficient for ahjEi - + + 1bit half adder verilog device + 1-битті жартылай-қосқыш логикалық құрылғысы - - Temperature coefficient for hjEi0 - + + 1Bit HalfAdder + 1 Битті жартылай қосқыш - - Temperature coefficient for Rth - + + Harmonic balance simulation + Гармоникалық баланстың моделі - - First order relative TC of parameter Rth - + + number of harmonics + гармоника саны - - HICUM L2 V2.31 - + + Harmonic balance + Гармоникалық баланс @@ -12082,7 +7789,7 @@ Wrong 'component' line format! - + ERROR: No file name in SPICE component "%1". ҚАТЕ: "%1"SPICE компонентінің аты жоқ. @@ -12505,11 +8212,15 @@ Wrong 'component' line format! Ток ағынын бақылайтын кернеу көзінің қорегі - voltage controlled voltage source кернеумен басқарылатын кернеу көзі + + + voltage controlled resistor + + resistance gain @@ -12544,7 +8255,7 @@ Wrong 'component' line format! - + ERROR: No file name in %1 component "%2". ҚАТЕ: "%1"және"%2" компоненттерінің аты жоқ. @@ -12707,7 +8418,7 @@ Wrong 'component' line format! - + invalid дұрыс емес @@ -12816,7 +8527,7 @@ Wrong 'component' line format! - + Successfully exported @@ -12839,8 +8550,8 @@ Use PNG, JPEG or SVG graphics! - - + + verilog-a user devices @@ -12899,14 +8610,14 @@ Use PNG, JPEG or SVG graphics! - + diagrams - + paintings @@ -13024,16 +8735,16 @@ Set the Octave location on the application settings. - + - + untitled аты жоқ - + Format Error: 'Painting' field is not closed! @@ -13208,17 +8919,17 @@ Unknown field! Қате:Сұлбаны енгізу"%1" мүмкін емес. - + WARNING: Skipping library component "%1". ЕСКЕРТУ:"%1" кітапхананың компонентасы жетіспейді. - - ERROR: Cannot load library component "%1". - Қате: Кітапхана компонентасын енгізу"%1" мүмкін емес. + + ERROR: "%1": Cannot load library component "%2" from "%3" + - + WARNING: Ignore simulation component in subcircuit "%1". ЕСКЕРТУ:"%1" сұлбадағы моделдеу компонентасы қабылданбайды. @@ -13228,7 +8939,7 @@ Unknown field! - + ERROR: Only one digital simulation allowed. ҚАТЕ: Тек қана бір цифрлық моделдеуге рұқсат етіледі. @@ -13354,11 +9065,17 @@ a substrate with lower permittivity and larger height. Cannot save settings file ! + + + Quarter wave filters do not allow low-pass nor high-pass masks + + + QucsActiveFilter - + &File &Файл @@ -13368,7 +9085,29 @@ a substrate with lower permittivity and larger height. Ш&ығу - + + &View + &Түр + + + + &Console + + + + + Enables/disables the filter calculation console + + + + + Console + +Enables/disables the filter calculation console + + + + &Help &Көмек @@ -13388,30 +9127,30 @@ a substrate with lower permittivity and larger height. Qt жайлы... - - + + Passband attenuation, Ap (dB) - + Stopband attenuation, As (dB) - - Cuttof frequency, Fc (Hz) + + Cutoff frequency, Fc (Hz) - - + + Stopband frequency, Fs (Hz) - + Passband ripple Rp(dB) @@ -13421,7 +9160,7 @@ a substrate with lower permittivity and larger height. - + Filter order @@ -13471,27 +9210,61 @@ a substrate with lower permittivity and larger height. - - Calculation console + + Low Pass - - Filter topology + + General filter amplitude-frequency response - - Filter type: - Сүзгі типі: + + + + Unable to implement filter with such parameters and topology +Change parameters and/or topology and try again! + + + + + + Filter calculation was successful + - LowPass + Filter calculation terminated with error! + + + + + Filter calculation terminated with error + + + + + Lower cutoff frequency, Fl (Hz) + + + + + Copyright (C) 2014, 2015 by + Copyright (C) 2005, 2006 by {2014, 2015 ?} + + + + Filter topology + Filter type: + Сүзгі типі: + + + High Pass @@ -13517,62 +9290,45 @@ a substrate with lower permittivity and larger height. - + Cauer section - - General amplitude frequency response - - - - - Filter topology preview (one stage) - - - - + Filter parameters - + Transfer function and Topology - - General filter amplidure-frequency response - - - - + Filter topology preview - + Filter calculation console - + + + Ready. + Дайын. + + + Upper cutoff frequency of band-pass/band-stop filter is less than lower. Unable to implement such filter. Change parameters and try again. - - - - Unable to implement filter with such parameters and topology -Change parapeters and/or topology and try again! - - - - + Unable to use Cauer section for Chebyshev or Butterworth frequency response. Try to use another topology. @@ -13588,40 +9344,28 @@ frequency response. Try to use another topology. Function will be implemented in future version - - - -Filter calculation was sucessfull - - - - - -Filter calculation terminated with error - - Upper cutoff frequency, Fu (Hz) - - Lower cuttoff frequency, Fl (Hz) + + Transient bandwidth, TW (Hz) - - Transient bandwidth, TW (Hz) + + Error! - + Active filter design - + About... Жайлы... @@ -13633,12 +9377,7 @@ Active Filter synthesis program - - Copyright (C) 2014 by - Copyright (C) 2005, 2006 by {2014 ?} - - - + About Qt Qt жайлы @@ -13646,7 +9385,7 @@ Active Filter synthesis program QucsApp - + Schematic Сұлба @@ -13662,42 +9401,42 @@ Active Filter synthesis program - + VHDL Sources VHDL қорек көздері - - + + Verilog Sources Verilog қорек көздері - - + + Verilog-A Sources - - + + Octave Scripts - + Spice Files - + Any File Басқа файл - + The schematic search path has been refreshed. @@ -13717,7 +9456,7 @@ Active Filter synthesis program Сұлбалар - + New Құру @@ -13802,13 +9541,13 @@ Active Filter synthesis program - + - + @@ -13831,7 +9570,7 @@ Active Filter synthesis program Қате - + Cannot open "%1". Ашуға мүмкіндік болмады"%1". @@ -13843,8 +9582,16 @@ Active Filter synthesis program Кітапхана бұзылған. - - + + + + + Search results + + + + + @@ -13863,13 +9610,18 @@ Active Filter synthesis program Ақпарат - + Default icon not found: %1.png - + + verilog-a user devices + + + + -port -порттық @@ -13880,14 +9632,14 @@ Active Filter synthesis program - + The document contains unsaved changes! Құжатта сақталмаған өзгертулер бар! - + Do you want to save the changes before copying? @@ -13898,13 +9650,13 @@ Active Filter synthesis program - + &Save &Сақтау - + Copy file @@ -13938,31 +9690,31 @@ Active Filter synthesis program - + Warning Ескерту - + This will delete the file permanently! Continue ? Файлды жою қайтарылмайды! Жалғастырасыз ба? - + No Жоқ - + - + Yes ИЯ - + unknown @@ -14123,7 +9875,7 @@ Active Filter synthesis program - + @@ -14137,7 +9889,7 @@ Active Filter synthesis program Дайын. - + Creating new text editor... Жаңа мәтіндік редакторды құру... @@ -14202,12 +9954,12 @@ Active Filter synthesis program - + Cancel Артқа қайтару - + Cannot overwrite an open document Ашық құжатқа қайта жазу мүмкін емес @@ -14222,7 +9974,7 @@ Active Filter synthesis program Барлық файлдарды сақтау... - + Closing file... Файлды жабу... @@ -14246,10 +9998,6 @@ Active Filter synthesis program Open examples directory... - - OK - ИЯ - Printing... @@ -16204,114 +11952,6 @@ Trolltech Qt жайлы Warnings in last simulation! Press F5 Соңғы моделдеу кезіндегі ескерту! F5-ті басыңыз - - About... - Жайлы... - - - Qucs Version - Qucs нұсқасы - - - Quite Universal Circuit Simulator - Тізбектердің әмбебап симуляторы - - - Copyright (C) - Copyright (C) - - - by Michael Margraf - by Michael Margraf - - - Simulator by Stefan Jahn - Штефан Ян (Stefan Jahn) симуляторы - - - VHDL simulator 'FreeHDL' by Edwin Naroska and Marius Vollmer - VHDL симуляторы 'FreeHDL' Эдвин Нароска (Edwin Naroska) және Мариус Вольмер (Marius Vollmer) - - - Special thanks to Jens Flucke and Raimund Jacob - Ерекше алғысымызды Йенс Флюкке (Jens Flucke) және Раймунд Джакоб (Raimund Jacob) білдіреміз - - - Many thanks to Mike Brinson for correcting the VHDL output - VHDL-дегі қорытқы түзетулерді енгізгені үшін Майк Бринсонға (Mike Brinson) үлкен алғысымызды білдіреміз - - - GUI improvements by Gopala Krishna A - Графикалық интерфейсін өзгерткен-Gopala Krishna A - - - Verilog-AMS interface by Helene Parruitte - Verilog-AMS интерфейсі: Helene Parruitte - - - Translations: - Аудармалар: - - - German by Stefan Jahn - Немісше-Stefan Jahn - - - Polish by Dariusz Pienkowski - Польша тіліне-Dariusz Pienkowski - - - Romanian by Radu Circa - Румынша-Radu Circa - - - French by Vincent Habchi, F5RCS - Французша-Vincent Habchi, F5RCS - - - Spanish by Jose L. Redrejo Rodriguez - Испан тілінде - Jose L. Redrejo Rodriguez - - - Japanese by Toyoyuki Ishikawa - Жапон тіліне-Toyoyuki Ishikawa - - - Italian by Giorgio Luparia and Claudio Girardi - Итальян тіліне-Giorgio Luparia және Claudio Girardi - - - Hebrew by Dotan Nahum - Еврей тіліне аударған-Dotan Nahum - - - Swedish by Peter Landgren - Швед тілінде - Peter Landgren - - - Turkish by Onur and Ozgur Cobanoglu - Түрік тіліне-Onur және Ozgur Cobanoglu - - - Hungarian by Jozsef Bus - Венгер тіліне - Jozsef Bus - - - Russian by Igor Gorbounov - Орысша-Игорь Горбунов - - - Czech by Marek Straka - Чех тілінде-Marek Straka - - - Catalan by Antoni Subirats - Каталанша-Antoni Subirats - - - Arabic by Chabane Noureddine - Арабша Chabane Noureddine - QucsAttenuator @@ -16578,7 +12218,7 @@ Very simple text editor for Qucs QucsFilter - + &File &Файл @@ -16618,7 +12258,7 @@ Very simple text editor for Qucs - + Filter type: Сүзгі типі: @@ -16654,29 +12294,29 @@ Very simple text editor for Qucs - + Corner frequency: Кесу жиілігі: - + Stop frequency: Жиілікті тоқтату: - + Stop band frequency: Режекторлы сүзгінің жиілігі: - - + + Pass band ripple: Өткізу деңгейіндегі әр өлшемділік: - + Stop band attenuation: Режекторлы сүзгіні басып тастау: @@ -16746,19 +12386,19 @@ Filter synthesis program - + Result: Нәтиже: - + Error Қате - + Stop frequency must be greater than start frequency. Соңғы жиілік бастапқыдан үлкен болуы тиіс. @@ -16915,17 +12555,22 @@ Enables/disables the table of contents Жайлы - + Component Selection Компонентті ерекшелеу - - Search... - Іздеу... + + Search Lib Components + - + + Clear + + + + Component Компонент @@ -16940,7 +12585,7 @@ Enables/disables the table of contents Моделін көрсету - + About... Жайлы... @@ -16950,6 +12595,12 @@ Enables/disables the table of contents Qucs үшін тұтынушы кітапханалары + + + Copyright (C) 2011-2015 Qucs Team + + + Copyright (C) 2005 by Michael Margraf @@ -16957,7 +12608,7 @@ Enables/disables the table of contents Copyright (C) 2005 by Michael Margraf - + QucsLib Help Qucs кітапхана көмегі @@ -16977,14 +12628,17 @@ Enables/disables the table of contents Модел - - Search result - Іздеу нәтижесі + + + + + Search results + - + - + @@ -16993,13 +12647,13 @@ Enables/disables the table of contents Қате - + Cannot open "%1". Ашуға мүмкіндік болмады"%1". - + @@ -17007,21 +12661,6 @@ Enables/disables the table of contents Library is corrupt. Кітапхана бұзылған. - - - Search Library Component - Кітапхана компонентін іздеу - - - - Result - Нәтиже - - - - No appropriate component found. - Сәйкес компонент табылған жоқ. - QucsSettingsDialog @@ -18031,7 +13670,7 @@ Edits the symbol for this schematic - + Error Қате @@ -18049,7 +13688,7 @@ Set the admsXml location on the application settings. - + ERROR: Cannot create library file "%s". ҚАТЕ:"%s" кітапханалық файлды құру мүмкін емес. @@ -18058,83 +13697,46 @@ Set the admsXml location on the application settings. SearchDialog - - - - Dialog - - - - Text to search for Іздеу - - - - Text to replace with Алмастыру - - - - Ask before replacing Алмастыру алдында сұрау - - - - Case sensitive Регистрді ескеру - - - - Whole words only Тек қана тұтас сөздер - - - - Search backwards Кері іздеу - - - - Next - - - - - Close Жабу @@ -18148,29 +13750,6 @@ Set the admsXml location on the application settings. Search Text Мәтінді іздеу - - - The search result contains all components whose -name contains the search string. All libraries -are included in the search. - Ізделінді жолы бар барлық компоненттер іздеу нәтижесі құрамында бар. Барлық кітапханалар енгізілді. - - - - Search string: - Іздеу жолы: - - - - Search - Іздеу - - - - - Search result - Іздеу нәтижесі - SettingsDialog @@ -18451,11 +14030,6 @@ are included in the search. Simulation aborted by the user! - - Errors: -------- - Қателер: -------- - SpiceDialog @@ -18618,7 +14192,7 @@ are included in the search. SymbolWidget - + Symbol: Белгі: @@ -18627,6 +14201,13 @@ are included in the search. ! Drag n'Drop me ! Менің орнымды ауыстыр ! + + + Warning: Symbol '%1' missing in Qucs Library. +Drag and Drop may still work. +Please contact the developers. + + TextDoc diff --git a/qucs/translations/qucs_pl.ts b/qucs/translations/qucs_pl.ts index 718e02142b..c34321291f 100644 --- a/qucs/translations/qucs_pl.ts +++ b/qucs/translations/qucs_pl.ts @@ -3530,62 +3530,6 @@ Resistor color code computation program - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - @@ -3741,10 +3685,6 @@ Resistor color code computation program - - - - polarity @@ -3949,10 +3889,6 @@ Resistor color code computation program - - - - @@ -4093,5709 +4029,1480 @@ Resistor color code computation program Bond Wire - - bsim3v34nMOS verilog device - + + + + + + + + + + + simulation temperature + temperatura symulacji + + + + capacitor + kondensator + capacitance in Farad + pojemność w Faradach + + + initial voltage for transient simulation + napięcie początkowe dla symulacji czasowej + + + + + + + + schematic symbol + symbol schematu + + + + Capacitor + Kondensator + + + + current controlled current source + źródło prądowe sterowane prądem + + + + + + forward transfer factor + współczynnik transmisji w przód + + + + + + + + + + + + + + + delay time + czas opóźnienia + + + + Current Controlled Current Source + Źródło prądowe sterowane prądem + + + + current controlled voltage source + źródło napięciowe sterowane prądem + + + + Current Controlled Voltage Source + Źródło napięciowe sterowane prądem + + + + circulator + cyrkulator + + + + reference impedance of port 1 + impedancja odniesienia portu 1 + + + reference impedance of port 2 + impedancja odniesienia portu 2 + + + reference impedance of port 3 + impedancja odniesienia portu 3 + + + + Circulator + Cyrkulator + + + + coaxial transmission line + koncentryczna linia transmisyjna + + + + + relative permittivity of dielectric + przenikalność elektryczna dielektryka + + + + + specific resistance of conductor + rezystancja właściwa przewodnika + + + + + relative permeability of conductor + wyględna przenikalność przewodnika + + + inner diameter of shield + wewnętryna średnica płaszcza + + + diameter of inner conductor + średnica wewnętrznego przewodnika + + + + mechanical length of the line + fizyczna długość linii + + + + + + loss tangent + tanges kąta stratności + + + + Coaxial Line + Linia koncentryczna + + + + 1bit comparator verilog device + + + + + 1Bit Comparator + + + + + 2bit comparator verilog device + + + + + 2Bit Comparator + + + + + 4bit comparator verilog device + + + + + 4Bit Comparator + + + + + number of input ports + liczba wejść + + - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - simulation temperature - temperatura symulacji - - - - bsim3v34nMOS - - - - - bsim3v34pMOS verilog device - - - - - bsim3v34pMOS - - - - - bsim4v30nMOS verilog device - - - - - bsim4v30nMOS - - - - - bsim4v30pMOS verilog device - - - - - bsim4v30pMOS - - - - - capacitor - kondensator - - - - capacitance in Farad - pojemność w Faradach - - - - initial voltage for transient simulation - napięcie początkowe dla symulacji czasowej - - - - - - - - - schematic symbol - symbol schematu - - - - Capacitor - Kondensator - - - - current controlled current source - źródło prądowe sterowane prądem - - - - - - forward transfer factor - współczynnik transmisji w przód - - - - - - - - - - - - - - - delay time - czas opóźnienia - - - - Current Controlled Current Source - Źródło prądowe sterowane prądem - - - - current controlled voltage source - źródło napięciowe sterowane prądem - - - - Current Controlled Voltage Source - Źródło napięciowe sterowane prądem - - - - circulator - cyrkulator - - - - reference impedance of port 1 - impedancja odniesienia portu 1 - - - - reference impedance of port 2 - impedancja odniesienia portu 2 - - - - reference impedance of port 3 - impedancja odniesienia portu 3 - - - - Circulator - Cyrkulator - - - - coaxial transmission line - koncentryczna linia transmisyjna - - - - - relative permittivity of dielectric - przenikalność elektryczna dielektryka - - - - - - specific resistance of conductor - rezystancja właściwa przewodnika - - - - - - relative permeability of conductor - wyględna przenikalność przewodnika - - - - inner diameter of shield - wewnętryna średnica płaszcza - - - - diameter of inner conductor - średnica wewnętrznego przewodnika - - - - - mechanical length of the line - fizyczna długość linii - - - - - - - loss tangent - tanges kąta stratności - - - - Coaxial Line - Linia koncentryczna - - - - 1bit comparator verilog device - - - - - 1Bit Comparator - - - - - 2bit comparator verilog device - - - - - 2Bit Comparator - - - - - 4bit comparator verilog device - - - - - 4Bit Comparator - - - - - number of input ports - liczba wejść - - - - - - - voltage of high level - napięcie stanu wysokiego - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Error - Błąd - - - - Format Error: -Wrong line start! - Błąd formatu: -Błędny początek linii! - - - - Format Error: -Unknown component! -%1 - -Do you make use of loadable components? - - - - - Format Error: -Wrong 'component' line format! - Błąd formatu: -Błędny format lini 'component'! - - - - coplanar line - linia koplanarna - - - - - - - - - - - - - - name of substrate definition - nazwa podłoża - - - - - - - - - - - width of the line - szerokość linii - - - - - - - width of a gap - szerokość odstępu - - - - - - - length of the line - długość linii - - - - - - - material at the backside of the substrate - materiał z drugiej strony podłoża - - - - use approximation instead of precise equation - użyj aproksymacji zamiast dokładnych równań - - - - Coplanar Line - Linia koplanarna - - - - ideal coupler - sprzęgacz idealny - - - - coupling factor - współczynnik sprzeżenia - - - - phase shift of coupling path in degree - przesunięcie fazy odczepu w stopniach - - - - Coupler - sprzęgacz - - - - coplanar gap - przerwa koplanarna - - - - width of gap between the two lines - szerokość przerwy między liniami - - - - Coplanar Gap - przerwa koplanarna - - - - coplanar open - rozwarcie koplanarne - - - - width of gap at end of line - szerokość przerwy na końcu linii - - - - Coplanar Open - rozwarcie koplanarne - - - - coplanar short - zwarcie koplanarne - - - - Coplanar Short - zwarcie koplanarne - - - - coplanar step - koplanarna skokowa zmiana impedancji - - - - - - width of line 1 - szerokość linii 1 - - - - - - width of line 2 - szerokość linii 2 - - - - distance between ground planes - odstęp pomiędzy płaszczyznami masy - - - - Coplanar Step - koplanarna skokowa zmiana impedancji - - - - coupled transmission lines - - - - - characteristic impedance of even mode - - - - - characteristic impedance of odd mode - - - - - - - - electrical length of the line - długość elektryczna linii - - - - relative dielectric constant of even mode - - - - - relative dielectric constant of odd mode - - - - - attenuation factor per length of even mode - - - - - attenuation factor per length of odd mode - - - - - Coupled Transmission Line - - - - - D flip flop with asynchron reset - przerzutnik D z asynchronicznym resetem - - - - D-FlipFlop - Przerzutnik D - - - - - dc simulation - symulacja dc - - - - - - - relative tolerance for convergence - tolerancja względna dla konwergencji - - - - - - - absolute tolerance for currents - tolerancja absolutna dla prądów - - - - - - - absolute tolerance for voltages - tolerancja absolutna dla napięć - - - - put operating points into dataset - wstaw punkt pracy do zbioru wyników - - - - - - - maximum number of iterations until error - maksymalna liczba iteracji - - - - save subcircuit nodes into dataset - zapisz węzły podukładów w zbiorze wyników - - - - preferred convergence algorithm - preferowany algorytm zbieżności - - - - - - method for solving the circuit matrix - metoda rozwiązania macierzy układu - - - - dc block - zapora dc - - - - dc Block - Zapora dc - - - - dc feed - dławik - - - - dc Feed - Dławik - - - - D flip flop with set and reset verilog device - - - - - - - - cross coupled gate transfer function high scaling factor - - - - - - - - cross coupled gate transfer function low scaling factor - - - - - - - - cross coupled gate delay - - - - - D-FlipFlop w/ SR - - - - - diac (bidirectional trigger diode) - - - - - - (bidirectional) breakover voltage - - - - - (bidirectional) breakover current - - - - - - - parasitic capacitance - - - - - - - - - emission coefficient - współczynnik emisji - - - - - - intrinsic junction resistance - - - - - Diac - - - - - - digital simulation - symulacja cyfrowa - - - - type of simulation - typ symulacji - - - - duration of TimeList simulation - czas trwania symulacji TimeList - - - - netlist format - format pliku netlisty - - - - - digital source - źródło cyfrowe - - - - - number of the port - numer portu - - - - initial output value - początkowa wartość wyjściowa - - - - list of times for changing output value - lista czasów, dla których nastepuje zmiana wartości wyjściowej - - - - diode - dioda - - - - - - zero-bias junction capacitance - pojemność złączowa przy zerowym prądzie - - - - - - - - grading coefficient - - - - - - - - junction potential - potencjał złączowy - - - - linear capacitance - pojemność liniowa - - - - recombination current parameter - współczynnik prądu rekombinacji - - - - emission coefficient for Isr - współczynnik emisji dla Isr - - - - ohmic series resistance - reyzstancja szeregowa w Ohmach - - - - - - transit time - czas przelotu - - - - high-injection knee current (0=infinity) - - - - - - - reverse breakdown voltage - wsteczne napięcie przebicia - - - - - - current at reverse breakdown voltage - prąd dla wstecznego napięcie przebicia - - - - Bv linear temperature coefficient - Bv liniowy współczynnik temepraturowy - - - - Rs linear temperature coefficient - Rs liniowy współczynnik temepraturowy - - - - Tt linear temperature coefficient - Tt liniowy współczynnik temepraturowy - - - - Tt quadratic temperature coefficient - Tt kwadratowy współczynnik temepraturowy - - - - M linear temperature coefficient - M liniowy współczynnik temepraturowy - - - - M quadratic temperature coefficient - M kwadratowy współczynnik temepraturowy - - - - - default area for diode - domyślny obszar diody - - - - Diode - Dioda - - - - data voltage level shifter (digital to analogue) verilog device - - - - - - voltage level - - - - - - time delay - - - - - D2A Level Shifter - - - - - data voltage level shifter (analogue to digital) verilog device - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - V - - - - - A2D Level Shifter - - - - - 2to4 demultiplexer verilog device - - - - - 2to4 Demux - - - - - 3to8 demultiplexer verilog device - - - - - 3to8 Demux - - - - - 4to16 demultiplexer verilog device - - - - - 4to16 Demux - - - - - externally controlled voltage source - - - - - - voltage in Volts - napięcie w Voltach - - - - Externally Controlled Voltage Source - - - - - EPFL-EKV MOS 2.6 verilog device - - - - - long = 1, short = 2 - - - - - length parameter - - - - - - - - - - - - - m - - - - - Width parameter - - - - - parallel multiple device number - - - - - series multiple device number - - - - - gate oxide capacitance per unit area - - - - - F/m**2 - - - - - metallurgical junction depth - - - - - channel width correction - - - - - channel length correction - - - - - long channel threshold voltage - - - - - body effect parameter - - - - - V**(1/2) - - - - - bulk Fermi potential - - - - - - - transconductance parameter - współczynnik transkonduktacji - - - - - A/V**2 - - - - - mobility reduction coefficient - - - - - - - - - - - - - 1/V - - - - - mobility coefficient - - - - - - - V/m - - - - - - longitudinal critical field - - - - - depletion length coefficient - - - - - narrow-channel effect coefficient - - - - - reverse short channel charge density - - - - - A*s/m**2 - - - - - characteristic length - - - - - threshold voltage temperature coefficient - - - - - - - - - - - - - V/K - - - - - mobility temperature coefficient - - - - - Longitudinal critical field temperature exponent - - - - - Ibb temperature coefficient - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1/K - - - - - heavily doped diffusion length - - - - - drain/source diffusion sheet resistance - - - - - Ohm/square - - - - - source contact resistance - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Ohm - Ohm - - - - drain contact resistance - - - - - gate to source overlap capacitance - - - - - - - - F/m - - - - - gate to drain overlap capacitance - - - - - gate to bulk overlap capacitance - - - - - first impact ionization coefficient - - - - - 1/m - - - - - second impact ionization coefficient - - - - - saturation voltage factor for impact ionization - - - - - area related theshold voltage mismatch parameter - - - - - V*m - - - - - area related gain mismatch parameter - - - - - area related body effect mismatch parameter - - - - - sqrt(V)*m - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - F - - - - - - diode relative area - - - - - charge partition parameter - - - - - - - - - - - parameter measurement temperature - temperatura, przy której zmierzono parametry - - - - - - - - - - Celsius - - - - - EPFL-EKV NMOS 2.6 - - - - - EPFL-EKV PMOS 2.6 - - - - - equation defined device - element opisany równaniem - - - - type of equations - typ równań - - - - number of branches - - - - - - current equation - równanie prądowe - - - - - charge equation - równanie ładunkowe - - - - Equation Defined Device - Element Opisany Równaniem - - - - equation - równanie - - - - - - Equation - Równanie - - - - put result into dataset - wstaw rezultaty do zbioru wyników - - - - externally driven transient simulation - - - - - - integration method - metoda całkowania - - - - - order of integration method - rząd metody całkowania - - - - - initial step size in seconds - krok początkowy w sekundach - - - - - minimum step size in seconds - minimalny krok w sekundach - - - - - relative tolerance of local truncation error - relatywna tolerancja błedu zaokragleń - - - - - absolute tolerance of local truncation error - absolutna tolerancja błedu zaokragleń - - - - - overestimation of local truncation error - przeszacowanie błedu zaokrąglenia - - - - - relax time step raster - czas relaksacji - - - - - perform an initial DC analysis - przeprowadź początkową analizę DC - - - - - maximum step size in seconds - maksymalny krok czasu w sekundach - - - - External transient simulation - - - - - 1bit full adder verilog device - - - - - 1Bit FullAdder - - - - - 2bit full adder verilog device - - - - - 2Bit FullAdder - - - - - gated D latch verilog device - - - - - Gated D-Latch - - - - - 4bit Gray to binary converter verilog device - - - - - 4Bit Gray2Bin - - - - - ground (reference potential) - masa (potencjał odniesienia) - - - - Ground - Masa - - - - gyrator (impedance inverter) - żyrator (odwracacz impedancji) - - - - gyrator ratio - przekładnia żyratora - - - - Gyrator - Żyrator - - - - 1bit half adder verilog device - - - - - 1Bit HalfAdder - - - - - Harmonic balance simulation - Symulacja bilansu harmonicznych - - - - number of harmonics - liczba harmonicznych - - - - Harmonic balance - Bilans harmonicznych - - - - HBT model by Ferdinand-Braun-Institut (FBH), Berlin - Model HBT, Ferdinand Braun Institut (FBH), Berlin - - - - - - - Ignored - Nieistotne - - - - Device operating temperature, Celsius - Temperatura pracy przyrządu, Celsjusz - - - - Thermal resistance, K/W - Rezystancja termiczna,K/W - - - - - - - - - - - - - Thermal capacitance - Pojemność termiczna - - - - Scaling factor, number of emitter fingers - Współczynnik skalujący, liczba emiterów - - - - Length of emitter finger, m - Długość palca emitera, m - - - - Width of emitter finger, m - Szerokość palca emitera, m - - - - Forward saturation current density, A/um^2 - Gęstośc prądu nasycenia, A/um^2 - - - - Forward current emission coefficient - - - - - Forward thermal activation energy, V, (0 == disables temperature dependence) - - - - - B-E leakage saturation current density, A/um^2 - - - - - B-E leakage emission coefficient - - - - - Limiting resistor of B-E leakage diode, Ohm - Rezystor ograniczający prąd upływu diody B-E, Ohm - - - - B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - 2nd B-E leakage saturation current density, A/um^2 - - - - - 2nd B-E leakage emission coefficient - - - - - 2nd Limiting resistor of B-E leakage diode, Ohm - - - - - 2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Reverse saturation current density, A/um^2 - - - - - Reverse current emission coefficient - - - - - Reverse thermal activation energy, V, (0 == disables temperature dependence) - - - - - Fraction of Cjc that goes to internal base node - - - - - B-C leakage saturation current density, A/um^2 (0. switches off diode) - - - - - B-C leakage emission coefficient (0. switches off diode) - - - - - Limiting resistor of B-C leakage diode, Ohm - Rezystor ograniczający prąd upływu diody B-C, Ohm - - - - B-C leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Ideal forward beta - - - - - Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence) - Współczynnik temperaturowy wzmocnienia prądowego wprzód, -1/K, (0 == brak zalezności) - - - - Ideal reverse beta - Idealny współczynnik beta wtył - - - - Forward Early voltage, V, (0 == disables Early Effect) - Napięcie Earlyego wprzód, V, (0 == bez zjawiska) - - - - Reverse Early voltage, V, (0 == disables Early Effect) - Napięcie Earlyego wtył, V, (0 == bez zjawiska) - - - - Forward high-injection knee current, A, (0 == disables Webster Effect) - - - - - Reverse high-injection knee current, A, (0 == disables Webster Effect) - - - - - C-E breakdown exponent, (0 == disables collector break-down) - - - - - C-E breakdown voltage, V, (0 == disables collector break-down) - napięcie przebicia C-E, V, (0 == bez zjawiska przebicia) - - - - C-E breakdown factor, (0 == disables collector break-down) - - - - - B-E breakdown voltage, V, (0 == disables emitter break-down) - napięcie przebicia B-E, V, (0 == bez zjawiska przebicia) - - - - Ideal reverse transit time, s - idealny czas przelotu w tył, s - - - - Extrinsic BC diffusion capacitance, F - - - - - Ideal forward transit time, s - idealny czas przelotu wprzód, s - - - - Temperature coefficient of forward transit time - - - - - Excess transit time coefficient at base push-out - - - - - Smoothing parameter for Thcs - - - - - B-E zero-bias depletion capacitance, F/um^2 - domieszkowana pojemność baza emiter przy zerowym prądzie, F/um^2 - - - - B-E junction exponential factor - wykładnik potęgowy złącza B-E - - - - B-E junction built-in potential, V - wbudowany potencjał złączowy B-E, V - - - - B-C zero-bias depletion capacitance, F/um^2 - domieszkowana pojemność B-C przy zerowym prądzie, F/um^2 - - - - B-C junction exponential factor - wykładnik potęgowy złącza B-C - - - - B-C junction built-in potential, V - wbudowany potencjał złączowy B-C, V - - - - not used - nie używane - - - - Minimum B-C depletion capacitance (Vbc dependence), F/um^2 - - - - - Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction) - Prąd kolektora, dla którego Cbc osiąga Cmin, A/um^2 (0 == bez redukcji Cbc) - - - - Fraction of Cmin, lower limit of BC capacitance (Ic dependence) - - - - - Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out) - - - - - Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out) - - - - - Slope of Jk at high currents , Ohm*um^2 - - - - - Voltage shift of base push-out onset, V - - - - - Collector resistance, Ohm/finger - rezystancja kolektora, Ohm/palec - - - - Emitter resistance, Ohm/finger - Rezystancja emitera, Ohm/palec - - - - Extrinsic base resistance, Ohm/finger - Zewnętrzna rezystancja bazy, Ohm/palec - - - - Inner Base ohmic resistance, Ohm/finger - Wewnętrzna rezystancja bazy, Ohm/palec - - - - Collector inductance, H - Indukcyjność kolektora, H - - - - Emitter inductance, H - Indukcyjność emitera, H - - - - Base inductance, H - indukczjność bazy, H - - - - Extrinsic B-C capacitance, F - Zewnętrzna pojemność B-C, F - - - - Extrinsic base capacitance, F - Zewnętrzna pojemność bazy, F - - - - Extrinsic collector capacitance, F - Zewnętrzna pojemność kolektora, F - - - - - Flicker-noise coefficient - Współczynnik szumów migotania - - - - - Flicker-noise exponent - - - - - - Flicker-noise frequency exponent - - - - - Burst noise coefficient - - - - - Burst noise exponent - - - - - Burst noise corner frequency, Hz - - - - - Ambient temperature at which the parameters were determined - - - - - FBH HBT - FBH HBT - - - - HICUM Level 0 v1.12 verilog device - komponent HICUM Level 2 v2.1 veriloga {0 ?} {1.12 ?} - - - - - - - (Modified) saturation current - - - - - - - - Non-ideality coefficient of forward collector current - - - - - - - - Non-ideality coefficient of reverse collector current - - - - - - - - - - - - - - - - forward Early voltage (normalization volt.) - - - - - - - - forward d.c. high-injection roll-off current - - - - - - - - inverse d.c. high-injection roll-off current - - - - - - - - high-injection correction current - - - - - - - high-injection correction factor - - - - - - - - BE saturation current - - - - - - - - BE non-ideality factor - - - - - - - - BE recombination saturation current - - - - - - - - BE recombination non-ideality factor - - - - - - - - BC saturation current - - - - - - - - BC non-ideality factor - - - - - - - - Zero-bias BE depletion capacitance - - - - - - - - BE built-in voltage - - - - - - - - BE exponent factor - - - - - - - - Ratio of maximum to zero-bias value - - - - - - - - low current transit time at Vbici=0 - - - - - - - - Base width modulation contribution - - - - - - - - SCR width modulation contribution - - - - - - - - Storage time in neutral emitter - - - - - - - - Exponent factor for emitter transit time - - - - - - - - Saturation time at high current densities - - - - - - - - Smoothing factor for current dependence - - - - - - - - Storage time at inverse operation - - - - - - - - Low-field collector resistance under emitter - - - - - - - - Voltage dividing ohmic and satur.region - - - - - - - - - - - - Punch-through voltage - - - - - - - - Saturation voltage - - - - - - - - Total zero-bias BC depletion capacitance - + + + + voltage of high level + napięcie stanu wysokiego - - - - - BC built-in voltage - + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + Error + Błąd - - - - - BC exponent factor - + + Format Error: +Wrong line start! + Błąd formatu: +Błędny początek linii! - - - - - Punch-through voltage of BC junction + + Format Error: +Unknown component! +%1 + +Do you make use of loadable components? - - - - - Zero-bias external BC depletion capacitance - + + Format Error: +Wrong 'component' line format! + Błąd formatu: +Błędny format lini 'component'! - - - - - External BC built-in voltage - + + coplanar line + linia koplanarna - - - - - External BC exponent factor - + + + + + + + + + + + + name of substrate definition + nazwa podłoża - - - - - Split factor = Cjci0/Cjc0 - + + + + + + + + + width of the line + szerokość linii - - - - Internal base resistance at zero-bias - + + + + width of a gap + szerokość odstępu - - - - - Geometry factor - + + + + + length of the line + długość linii - - - - - - - - - External base series resistance - zewnętrzna rezystancja bazy + + + + material at the backside of the substrate + materiał z drugiej strony podłoża - - - - - - - - - Emitter series resistance - Rezystancja szeregowa emitera + use approximation instead of precise equation + użyj aproksymacji zamiast dokładnych równań - - - - - - - - - - External collector series resistance - zewnętrzna rezystancja szeregowa kolektora + + Coplanar Line + Linia koplanarna - - - - - - - - - - Substrate transistor transfer saturation current - + + ideal coupler + sprzęgacz idealny - - - - - Substrate transistor transfer current non-ideality factor - + + coupling factor + współczynnik sprzeżenia - - - - SC saturation current - + phase shift of coupling path in degree + przesunięcie fazy odczepu w stopniach - - - - - SC non-ideality factor - + + Coupler + sprzęgacz - - - - - Zero-bias SC depletion capacitance - + + coplanar gap + przerwa koplanarna - - - - - SC built-in voltage - + + width of gap between the two lines + szerokość przerwy między liniami - - - - - External SC exponent factor - + + Coplanar Gap + przerwa koplanarna - - - - - SC punch-through voltage - + + coplanar open + rozwarcie koplanarne - - - - - Collector-base isolation (overlap) capacitance - + + width of gap at end of line + szerokość przerwy na końcu linii - - - - - Emitter-base oxide capacitance - + + Coplanar Open + rozwarcie koplanarne - - - - - Exponent factor - + + coplanar short + zwarcie koplanarne - - - - - Prefactor - + + Coplanar Short + zwarcie koplanarne - - - - - M^(1-AF) - + + coplanar step + koplanarna skokowa zmiana impedancji - - - - - flicker noise exponent factor - + + + + width of line 1 + szerokość linii 1 - - - - Bandgap-voltage - - - - - - - - Effective emitter bandgap-voltage - + + + width of line 2 + szerokość linii 2 - - - - - Effective collector bandgap-voltage - + + distance between ground planes + odstęp pomiędzy płaszczyznami masy - - - - - Effective substrate bandgap-voltage - + + Coplanar Step + koplanarna skokowa zmiana impedancji - - - - - Coefficient K1 in T-dependent bandgap equation + + coupled transmission lines - - - - - Coefficient K2 in T-dependent bandgap equation + + characteristic impedance of even mode - - - - - Frist-order TC of tf0 + + characteristic impedance of odd mode - - - - - Second-order TC of tf0 - + + + + + electrical length of the line + długość elektryczna linii - - - - - - 1/K^2 + + relative dielectric constant of even mode - - - - - - - - Exponent coefficient in transfer current temperature dependence + relative dielectric constant of odd mode - - - - Exponent coefficient in BE junction current temperature dependence + attenuation factor per length of even mode - - - - TC of epi-collector diffusivity + attenuation factor per length of odd mode - - - - - Relative TC of satur.drift velocity + + Coupled Transmission Line - - - - - Relative TC of vces - + + D flip flop with asynchron reset + przerzutnik D z asynchronicznym resetem - - - - - TC of internal base resistance - + + D-FlipFlop + Przerzutnik D - - - - - TC of external base resistance - + + + dc simulation + symulacja dc - - - - - TC of external collector resistance - + + + + + relative tolerance for convergence + tolerancja względna dla konwergencji - - - - TC of emitter resistances - + + + + absolute tolerance for currents + tolerancja absolutna dla prądów - - - TC of avalanche prefactor - + + + + absolute tolerance for voltages + tolerancja absolutna dla napięć - - - - TC of avalanche exponential factor - + + put operating points into dataset + wstaw punkt pracy do zbioru wyników - - - - Flag for self-heating calculation - + + + + maximum number of iterations until error + maksymalna liczba iteracji - - - - - - - - - Thermal resistance - Rezystancja termiczna - - - - - - - - - - - K/W - + save subcircuit nodes into dataset + zapisz węzły podukładów w zbiorze wyników - - - - Ws/K - + preferred convergence algorithm + preferowany algorytm zbieżności - - - - - Temperature for which parameters are valid - + + + + method for solving the circuit matrix + metoda rozwiązania macierzy układu - - - - - - - - - C - + + dc block + zapora dc - - - - - Temperature change for particular transistor - + + dc Block + Zapora dc - - - - - - - - - K - + + dc feed + dławik - - npn HICUM L0 v1.12 - + + dc Feed + Dławik - - pnp HICUM L0 v1.12 + + D flip flop with set and reset verilog device - - - HICUM Level 2 v2.22 verilog device - komponent HICUM Level 2 v2.1 veriloga {2 ?} {2.22 ?} - - - - - - GICCR constant - stała GICCR - - - - - - - A^2s + + + + cross coupled gate transfer function high scaling factor - - - - - Zero-bias hole charge - ładunek dziury (zero-bias) - - - - - - - - - - - Coul + + + + cross coupled gate transfer function low scaling factor - - - - - - High-current correction for 2D and 3D effects - Korekcja wielkoprądowa dla efektów 2D i 3D - - - - - - - - Emitter minority charge weighting factor in HBTs + + + + + cross coupled gate delay - - - - - - Collector minority charge weighting factor in HBTs + + D-FlipFlop w/ SR - - - - - - B-E depletion charge weighting factor in HBTs + + diac (bidirectional trigger diode) - - - - - - B-C depletion charge weighting factor in HBTs + + + (bidirectional) breakover voltage - - - - - Internal B-E saturation current - wewnętrzny prąd nasycenia B-E - - - - - - - - Internal B-E current ideality factor + (bidirectional) breakover current - - - - - Internal B-E recombination saturation current + + + parasitic capacitance - - - - - - Internal B-E recombination current ideality factor - + + + + + + emission coefficient + współczynnik emisji - - - - - Peripheral B-E saturation current + + + intrinsic junction resistance - - - - - - Peripheral B-E current ideality factor + + Diac - - - - - - Peripheral B-E recombination saturation current - + + + digital simulation + symulacja cyfrowa - - - - - - Peripheral B-E recombination current ideality factor - + + type of simulation + typ symulacji - - - - - Non-ideality factor for III-V HBTs - + duration of TimeList simulation + czas trwania symulacji TimeList - - - - Base current recombination time constant at B-C barrier for high forward injection - + netlist format + format pliku netlisty - - - - - - Internal B-C saturation current - wewnętrzny prąd nasycenia B-C + + + digital source + źródło cyfrowe - - - - - - Internal B-C current ideality factor - + + + number of the port + numer portu - - - - - External B-C saturation current - - - - - - - - - External B-C current ideality factor - + initial output value + początkowa wartość wyjściowa - - - - - B-E tunneling saturation current - + list of times for changing output value + lista czasów, dla których nastepuje zmiana wartości wyjściowej - - - - - - Exponent factor for tunneling current - + + diode + dioda - - - - - Specifies the base node connection for the tunneling current - + + + + zero-bias junction capacitance + pojemność złączowa przy zerowym prądzie - - - - - Avalanche current factor - - - - - - - - - Exponent factor for avalanche current + + + + + grading coefficient - - - - - - Relative TC for FAVL - Relatywny TC dla FAVL + + + + + junction potential + potencjał złączowy - - - - - - Relative TC for QAVL - Relatywny TC dla QAVL + + linear capacitance + pojemność liniowa - - - - - - Zero bias internal base resistance - wewnętrzna rezystancja bazy (zero-bias) + + recombination current parameter + współczynnik prądu rekombinacji - - - - - - Factor for geometry dependence of emitter current crowding - + + emission coefficient for Isr + współczynnik emisji dla Isr - - - - - Correction factor for modulation by B-E and B-C space charge layer - + ohmic series resistance + reyzstancja szeregowa w Ohmach - - - - - Ratio of HF shunt to total internal capacitance (lateral NQS effect) - + + + transit time + czas przelotu - - - - - Ration of internal to total minority charge + high-injection knee current (0=infinity) - - - - - - Forward ideality factor of substrate transfer current - + + + + reverse breakdown voltage + wsteczne napięcie przebicia - - - - - C-S diode saturation current - prąd nasycenia diody C-S + + + current at reverse breakdown voltage + prąd dla wstecznego napięcie przebicia - - - - - - Ideality factor of C-S diode current - + + Bv linear temperature coefficient + Bv liniowy współczynnik temepraturowy - - - - - Transit time for forward operation of substrate transistor - - - - - - - - - Substrate series resistance - Szeregowa rezystancja podłoża + Rs linear temperature coefficient + Rs liniowy współczynnik temepraturowy - - - - - - Substrate shunt capacitance - Pojemność podłoża (równoległa) + + Tt linear temperature coefficient + Tt liniowy współczynnik temepraturowy - - - - - - Internal B-E zero-bias depletion capacitance - + + Tt quadratic temperature coefficient + Tt kwadratowy współczynnik temepraturowy - - - - - - Internal B-E built-in potential - + + M linear temperature coefficient + M liniowy współczynnik temepraturowy - - - - - - Internal B-E grading coefficient - + + M quadratic temperature coefficient + M kwadratowy współczynnik temepraturowy - - - - - - Ratio of maximum to zero-bias value of internal B-E capacitance - + + + default area for diode + domyślny obszar diody - - - - - - Peripheral B-E zero-bias depletion capacitance - + + Diode + Dioda - - - - - - Peripheral B-E built-in potential + + data voltage level shifter (digital to analogue) verilog device - - - - - Peripheral B-E grading coefficient + + voltage level - - - - - Ratio of maximum to zero-bias value of peripheral B-E capacitance + + time delay - - - - - - Internal B-C zero-bias depletion capacitance + + D2A Level Shifter - - - - - - Internal B-C built-in potential + + data voltage level shifter (analogue to digital) verilog device + + + + + + + + + + + + + + + + + + + - - - - - Internal B-C grading coefficient + + + V - - - - - - Internal B-C punch-through voltage + + A2D Level Shifter - - - - - - External B-C zero-bias depletion capacitance + + 2to4 demultiplexer verilog device - - - - - - External B-C built-in potential + + 2to4 Demux - - - - - - External B-C grading coefficient + + 3to8 demultiplexer verilog device - - - - - - External B-C punch-through voltage + + 3to8 Demux - - - - - Partitioning factor of parasitic B-C cap + + 4to16 demultiplexer verilog device - - - - - Partitioning factor of parasitic B-E cap + + 4to16 Demux - - - - - - C-S zero-bias depletion capacitance + + externally controlled voltage source - - - - - - C-S built-in potential - + + + voltage in Volts + napięcie w Voltach - - - - - - C-S grading coefficient + + Externally Controlled Voltage Source - - - - - - C-S punch-through voltage + + EPFL-EKV MOS 2.6 verilog device - - - - - - Low current forward transit time at VBC=0V + + long = 1, short = 2 - - - - - - Time constant for base and B-C space charge layer width modulation + + length parameter + - - - - Time constant for modelling carrier jam at low VCE - - - + - - - - - Neutral emitter storage time - - - - - - - - Exponent factor for current dependence of neutral emitter storage time + + + + + m - - - - - - Saturation time constant at high current densities + + Width parameter - - - - - Smoothing factor for current dependence of base and collector transit time + parallel multiple device number - - - - - Partitioning factor for base and collector portion + series multiple device number - - - - - Internal collector resistance at low electric field + gate oxide capacitance per unit area - - - - - - Voltage separating ohmic and saturation velocity regime + + F/m**2 - - - - - - Internal C-E saturation voltage + + metallurgical junction depth - - - - - Collector punch-through voltage + channel width correction - - - - - Storage time for inverse operation + channel length correction - - - - - Total parasitic B-E capacitance - Całkowita pojemnośc pasożytnicza B-E - - - - - - - - Total parasitic B-C capacitance - Całkowita pojemnośc pasożytnicza B-C + long channel threshold voltage + - - - - - Factor for additional delay time of minority charge + body effect parameter - - - - - - Factor for additional delay time of transfer current + + V**(1/2) - - - - Flag for turning on and off of vertical NQS effect + bulk Fermi potential - - - - - - Flicker noise coefficient - współczynnik szumów migotania - - - - - - - - Flicker noise exponent factor - + + + + transconductance parameter + współczynnik transkonduktacji - - - - - Flag for determining where to tag the flicker noise source + + + A/V**2 - - - - - Scaling factor for collector minority charge in direction of emitter width + mobility reduction coefficient - - - - - - Scaling factor for collector minority charge in direction of emitter length + + + + + + 1/V - - - - - Bandgap voltage extrapolated to 0 K + mobility coefficient + - - - - - First order relative TC of parameter T0 + + V/m - - - - - - Second order relative TC of parameter T0 + + + longitudinal critical field - - - - - - Temperature exponent for RCI0 + + depletion length coefficient - - - - - Relative TC of saturation drift velocity + narrow-channel effect coefficient - - - - - - Relative TC of VCES - Relatywny TC dla VCES - - - - - - - - Temperature exponent of internal base resistance - wykładnik temperaturowy wewnętrznej rezystancji bazy - - - - - - - - Temperature exponent of external base resistance - wykładnik temperaturowy zewnętrznej rezystancji bazy - - - - - - - - Temperature exponent of external collector resistance - wykładnik temperaturowy zewnętrznej rezystancji kolektora + + reverse short channel charge density + - - - - - - Temperature exponent of emitter resistance - wykładnik temperaturowy rezystancji emitera + + A*s/m**2 + - - - - - Temperature exponent of mobility in substrate transistor transit time + characteristic length - - - - - Effective emitter bandgap voltage + + threshold voltage temperature coefficient - - - - - Effective collector bandgap voltage + + V/K - - - - - Effective substrate bandgap voltage + + mobility temperature coefficient - - - - - Coefficient K1 in T-dependent band-gap equation + + Longitudinal critical field temperature exponent - - - - Coefficient K2 in T-dependent band-gap equation + Ibb temperature coefficient - - - - - Exponent coefficient in B-E junction current temperature dependence + + 1/K - - - - - Relative TC of forward current gain for V2.1 model - Relatywny TC wzmocnienia wprzód dla modelu V2.1 + heavily doped diffusion length + - - - - Flag for turning on and off self-heating effect + drain/source diffusion sheet resistance - - - - - J/W + + Ohm/square - - - - Flag for compatibility with v2.1 model (0=v2.1) + source contact resistance - - - - - - Temperature at which parameters are specified - temperatura dla której określono parametry modeli - - + - - - - - Temperature change w.r.t. chip temperature for particular transistor - - - - - HICUM L2 v2.22 - HICUM L2 v2.22 {2 ?} + + + + + + + + + + + Ohm + Ohm - - HICUM Level 0 v1.2 verilog device - komponent HICUM Level 2 v2.1 veriloga {0 ?} {1.2 ?} + + drain contact resistance + - - - - reverse Early voltage (normalization volt.) + + gate to source overlap capacitance - - - - flag for turning on base related critical current + + + + + F/m - - - - Smoothing factor for the d.c. injection width + + gate to drain overlap capacitance - - - - BE charge built-in voltage for d.c. transfer current + + gate to bulk overlap capacitance - - - charge BE exponent factor for d.c. transfer current + first impact ionization coefficient - - - - BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current + + 1/m - - - TC of iqf + + second impact ionization coefficient - - - - Exponent factor for temperature dependent thermal resistance + + saturation voltage factor for impact ionization - - npn HICUM L0 v1.2 + + area related theshold voltage mismatch parameter - - pnp HICUM L0 v1.2 + + V*m - - HICUM Level 0 v1.2g verilog device + + area related gain mismatch parameter - - high-injection roll-off current + + area related body effect mismatch parameter - - TC of iqf (bandgap coefficient of zero bias hole charge) + + sqrt(V)*m - - TC of avalanche prefactor, identical to alfav of Hicum/L2 + + + + + + + + + + + A + + + - TC of avalanche exponential factor, identical to alqav of Hicum/L2 + + + + F - - Emitter part coefficient of the zero bias hole charge temperature variation + + + diode relative area - - Collector part coefficient of the zero bias hole charge temperature variation + + charge partition parameter - Bandgap TC parameter of ver - + + + + + + + parameter measurement temperature + temperatura, przy której zmierzono parametry - - Bandgap TC parameter of vef + + + + + + + + Celsius - - Specific recombination current at the BC barrier for high forward injection + + EPFL-EKV NMOS 2.6 - - npn HICUM L0 v1.2g + + EPFL-EKV PMOS 2.6 - - pnp HICUM L0 v1.2g - + + equation defined device + element opisany równaniem - - HICUM Level 0 v1.3 verilog device - komponent HICUM Level 2 v2.1 veriloga {0 ?} {1.3 ?} + + type of equations + typ równań - - Flag for using third order solution for transfer current + + number of branches - - bias dependence for reverse Early voltage - + + + current equation + równanie prądowe - - Flag for turning temperature dependence of tef0 on and off - + + + charge equation + równanie ładunkowe - - TC of Reverse Early voltage - + + Equation Defined Device + Element Opisany Równaniem - - TC of AVER - + + equation + równanie - - Bandgap difference between base and BE-junction - + + + + Equation + Równanie - - Frist-order TC of iqfh - + + put result into dataset + wstaw rezultaty do zbioru wyników - - Second-order TC of iqfh + + externally driven transient simulation - - npn HICUM L0 v1.3 - + + + integration method + metoda całkowania - - pnp HICUM L0 v1.3 - + + + order of integration method + rząd metody całkowania - - HICUM Level 2 v2.1 verilog device - komponent HICUM Level 2 v2.1 veriloga + + + initial step size in seconds + krok początkowy w sekundach - - Partitioning factor of parasitic B-C capacitance - + + + minimum step size in seconds + minimalny krok w sekundach - - Noise factor for internal base resistance - + + + relative tolerance of local truncation error + relatywna tolerancja błedu zaokragleń - - HICUM L2 v2.1 - HICUM L2 v2.1 + + + absolute tolerance of local truncation error + absolutna tolerancja błedu zaokragleń - - HICUM Level 2 v2.23 verilog device - komponent HICUM Level 2 v2.1 veriloga {2 ?} {2.23 ?} + + + overestimation of local truncation error + przeszacowanie błedu zaokrąglenia - - HICUM L2 v2.23 - HICUM L2 v2.23 {2 ?} + + + relax time step raster + czas relaksacji - - HICUM Level 2 v2.24 verilog device - komponent HICUM Level 2 v2.1 veriloga {2 ?} {2.24 ?} + + + perform an initial DC analysis + przeprowadź początkową analizę DC - - HICUM L2 v2.24 - HICUM L2 v2.24 {2 ?} + + + maximum step size in seconds + maksymalny krok czasu w sekundach - - hicumL2V2p31n verilog device + + External transient simulation - - Weight factor for the low current minority charge + + 1bit full adder verilog device - - Parameter describing the slope of hjEi(VBE) + + 1Bit FullAdder - - Smoothing parameter for hjEi(VBE) at high voltage + + 2bit full adder verilog device - - Time constant for modeling carrier jam at low VCE + + 2Bit FullAdder - - Barrier voltage + + gated D latch verilog device - - Normalization parameter + + Gated D-Latch - - Smoothing parameter for barrier voltage + + 4bit Gray to binary converter verilog device - - fitting factor for critical current + + 4Bit Gray2Bin - - Flag for turning on and off of correlated noise implementation - + + ground (reference potential) + masa (potencjał odniesienia) - - Emitter resistance flicker noise coefficient - + + Ground + Masa - - Emitter resistance flicker noise exponent factor - + + gyrator (impedance inverter) + żyrator (odwracacz impedancji) - - Bandgap difference between B and B-E junction used for hjEi0 and hf0 - + + gyrator ratio + przekładnia żyratora - - Temperature coefficient for ahjEi - + + Gyrator + Żyrator - - Temperature coefficient for hjEi0 + + 1bit half adder verilog device - - Temperature coefficient for Rth + + 1Bit HalfAdder - - First order relative TC of parameter Rth - + + Harmonic balance simulation + Symulacja bilansu harmonicznych - - HICUM L2 V2.31 - + + number of harmonics + liczba harmonicznych + + + + Harmonic balance + Bilans harmonicznych @@ -12086,7 +7793,7 @@ Błędny format lini 'component'! - + ERROR: No file name in SPICE component "%1". BŁĄD: Komponent SPICE "%1" nie ma nazwy pliku. @@ -12509,11 +8216,15 @@ Błędny format lini 'component'! Źródło prądowe sterowane napięciem - voltage controlled voltage source źródło napięciowe sterowane napięciem + + + voltage controlled resistor + + resistance gain @@ -12548,7 +8259,7 @@ Błędny format lini 'component'! - + ERROR: No file name in %1 component "%2". BŁĄD: Coś nie tak z %1 i "%2". @@ -12712,7 +8423,7 @@ Błędny format lini 'component'! - + invalid ułomny @@ -12824,7 +8535,7 @@ Błędny format lini 'component'! - + Successfully exported @@ -12847,8 +8558,8 @@ Use PNG, JPEG or SVG graphics! - - + + verilog-a user devices @@ -12907,14 +8618,14 @@ Use PNG, JPEG or SVG graphics! - + diagrams - + paintings @@ -13032,16 +8743,16 @@ Set the Octave location on the application settings. - + - + untitled bez nazwy - + Format Error: 'Painting' field is not closed! @@ -13217,17 +8928,17 @@ Nieznane pole! Błąd: Nie można otworzyć podukładu "%1". - + WARNING: Skipping library component "%1". OSTRZEŻENIE: Pominięto elelemnt biblioteczny "%1". - - ERROR: Cannot load library component "%1". - BŁĄD: Nie mozna załadować elementu bibliotecznego "%1". + + ERROR: "%1": Cannot load library component "%2" from "%3" + - + WARNING: Ignore simulation component in subcircuit "%1". OSTRZEŻENIE: Pomijam element w podukładzie "%1". @@ -13237,7 +8948,7 @@ Nieznane pole! - + ERROR: Only one digital simulation allowed. BŁĄD: Tylko jedna symulacja cyfrowa dozwolona. @@ -13366,21 +9077,49 @@ a substrate with lower permittivity and larger height. Cannot save settings file ! + + + Quarter wave filters do not allow low-pass nor high-pass masks + + + QucsActiveFilter - + &File &Plik - - E&xit - Wy&jście + + E&xit + Wy&jście + + + + &View + &Widok + + + + &Console + + + + + Enables/disables the filter calculation console + + + + + Console + +Enables/disables the filter calculation console + - + &Help &Pomoc @@ -13400,30 +9139,30 @@ a substrate with lower permittivity and larger height. O bibliotece QT... - - + + Passband attenuation, Ap (dB) - + Stopband attenuation, As (dB) - - Cuttof frequency, Fc (Hz) + + Cutoff frequency, Fc (Hz) - - + + Stopband frequency, Fs (Hz) - + Passband ripple Rp(dB) @@ -13433,7 +9172,7 @@ a substrate with lower permittivity and larger height. - + Filter order @@ -13483,27 +9222,61 @@ a substrate with lower permittivity and larger height. - - Calculation console + + Low Pass - - Filter topology + + General filter amplitude-frequency response - - Filter type: - Typ filtra: + + + + Unable to implement filter with such parameters and topology +Change parameters and/or topology and try again! + + + + + + Filter calculation was successful + - LowPass + Filter calculation terminated with error! + + + + + Filter calculation terminated with error + + + + + Lower cutoff frequency, Fl (Hz) + + + + + Copyright (C) 2014, 2015 by + Copyright (C) 2005, 2006 by {2014, 2015 ?} + + + + Filter topology + Filter type: + Typ filtra: + + + High Pass @@ -13529,62 +9302,45 @@ a substrate with lower permittivity and larger height. - + Cauer section - - General amplitude frequency response - - - - - Filter topology preview (one stage) - - - - + Filter parameters - + Transfer function and Topology - - General filter amplidure-frequency response + + Filter topology preview - - Filter topology preview + + Filter calculation console - - Filter calculation console + + + Ready. - + Upper cutoff frequency of band-pass/band-stop filter is less than lower. Unable to implement such filter. Change parameters and try again. - - - - Unable to implement filter with such parameters and topology -Change parapeters and/or topology and try again! - - - - + Unable to use Cauer section for Chebyshev or Butterworth frequency response. Try to use another topology. @@ -13600,40 +9356,28 @@ frequency response. Try to use another topology. Function will be implemented in future version - - - -Filter calculation was sucessfull - - - - - -Filter calculation terminated with error - - Upper cutoff frequency, Fu (Hz) - - Lower cuttoff frequency, Fl (Hz) + + Transient bandwidth, TW (Hz) - - Transient bandwidth, TW (Hz) + + Error! - + Active filter design - + About... O... @@ -13645,12 +9389,7 @@ Active Filter synthesis program - - Copyright (C) 2014 by - Copyright (C) 2005, 2006 by {2014 ?} - - - + About Qt O QT @@ -13658,7 +9397,7 @@ Active Filter synthesis program QucsApp - + Schematic Schemat @@ -13674,42 +9413,42 @@ Active Filter synthesis program - + VHDL Sources Źródła VHDL - - + + Verilog Sources Źródła Verilog - - + + Verilog-A Sources - - + + Octave Scripts - + Spice Files - + Any File Dowolny Plik - + The schematic search path has been refreshed. @@ -13729,7 +9468,7 @@ Active Filter synthesis program Schematy - + New Nowy @@ -13814,13 +9553,13 @@ Active Filter synthesis program - + - + @@ -13843,7 +9582,7 @@ Active Filter synthesis program Błąd - + Cannot open "%1". Nie można otworzyć "%1". @@ -13855,8 +9594,16 @@ Active Filter synthesis program Biblioteka jest uszkodzona. - - + + + + + Search results + + + + + @@ -13875,13 +9622,18 @@ Active Filter synthesis program Informacja - + Default icon not found: %1.png - + + verilog-a user devices + + + + -port -wrota @@ -13892,14 +9644,14 @@ Active Filter synthesis program - + The document contains unsaved changes! Dokument zawiera niezapisane zmiany! - + Do you want to save the changes before copying? @@ -13910,13 +9662,13 @@ Active Filter synthesis program - + &Save &Zapisz - + Copy file @@ -13950,31 +9702,31 @@ Active Filter synthesis program - + Warning Ostrzeżenia - + This will delete the file permanently! Continue ? Ta operacja usunie bezpowrotnie plik! Czy chcesz kontynuować ? - + No Nie - + - + Yes Tak - + unknown @@ -14135,7 +9887,7 @@ Active Filter synthesis program - + @@ -14149,7 +9901,7 @@ Active Filter synthesis program Gotowy. - + Creating new text editor... Tworzenie nowego tekstu... @@ -14214,12 +9966,12 @@ Active Filter synthesis program - + Cancel Porzuć - + Cannot overwrite an open document Nie mogę nadpisać otwartego projektu @@ -14234,7 +9986,7 @@ Active Filter synthesis program Zapisywanie wszystkich plików... - + Closing file... Zamykanie pliku... @@ -14258,10 +10010,6 @@ Active Filter synthesis program Open examples directory... - - OK - OK - Printing... @@ -16213,110 +11961,6 @@ O bibliotece QT firmy Trolltech Warnings in last simulation! Press F5 Ostrzeżenia podczas ostatniej symulacji! Wciśnij F5 - - About... - O... - - - Qucs Version - Wersja Qucs'a - - - Quite Universal Circuit Simulator - Quite Universal Circuit Simulator - - - Copyright (C) - Copyright (C) - - - by Michael Margraf - by Michael Margraf - - - Simulator by Stefan Jahn - Symulator by Stefan Jahn - - - VHDL simulator 'FreeHDL' by Edwin Naroska and Marius Vollmer - VHDL symulator 'FreeHDL' Edwin Naroska i Marius Vollmer - - - Special thanks to Jens Flucke and Raimund Jacob - specjalne podziękowania dla Jens Flucke i Raimund Jacob - - - Many thanks to Mike Brinson for correcting the VHDL output - Podziękowania dla Mike Brinsona za poprawki w wyjściu VHDL - - - GUI improvements by Gopala Krishna A - poprawki GUI Gopala Krishna A - - - Verilog-AMS interface by Helene Parruitte - interfejs Verilog-AMS Helene Parruitte - - - Translations: - Tłumaczenia: - - - German by Stefan Jahn - niemieckie Stefan Jahn - - - Polish by Dariusz Pienkowski - polskie Dariusz Pienkowski - - - Romanian by Radu Circa - rumuńskie Radu Circa - - - French by Vincent Habchi, F5RCS - francuskie Vincent Habchi, F5RCS - - - Spanish by Jose L. Redrejo Rodriguez - hiszpańskie Jose L. Redrejo Rodriguez - - - Japanese by Toyoyuki Ishikawa - japońskie Toyoyuki Ishikawa - - - Italian by Giorgio Luparia and Claudio Girardi - włoskie Giorgio Luparia and Claudio Girardi - - - Hebrew by Dotan Nahum - hebrajskie Dotan Nahum - - - Swedish by Peter Landgren - szwedzkie Peter Landgren - - - Turkish by Onur and Ozgur Cobanoglu - tureckie Onur i Ozgur Cobanoglu - - - Hungarian by Jozsef Bus - węgierskie Jozsef Bus - - - Russian by Igor Gorbounov - rosyjskie Igor Gorbounov - - - Czech by Marek Straka - czeskie Marek Straka - - - Catalan by Antoni Subirats - katalońskie Antoni Subirats - QucsAttenuator @@ -16588,7 +12232,7 @@ Bardzo prosty edytor tekstowy programu Qucs QucsFilter - + &File &Plik @@ -16628,7 +12272,7 @@ Bardzo prosty edytor tekstowy programu Qucs - + Filter type: Typ filtra: @@ -16664,29 +12308,29 @@ Bardzo prosty edytor tekstowy programu Qucs - + Corner frequency: Częstotliwość graniczna: - + Stop frequency: Częstotliwość końcowa: - + Stop band frequency: Częstotliwość graniczna poza pasmem przepustowym: - - + + Pass band ripple: Zafalowania w paśmie przepustowym: - + Stop band attenuation: Tłumienie poza pasmem przepustowym: @@ -16756,19 +12400,19 @@ Program syntezy filtrów - + Result: Wynik: - + Error Błąd - + Stop frequency must be greater than start frequency. Częstotliwość końcowa musi być większa niż częstotliwość początkowa. @@ -16925,17 +12569,22 @@ włącza/wyłącza wyświetlanie spisu treści O programie - + Component Selection Wybór elementu - - Search... - Szukaj... + + Search Lib Components + - + + Clear + + + + Component Element @@ -16950,7 +12599,7 @@ włącza/wyłącza wyświetlanie spisu treści Pokaż model - + About... O... @@ -16961,6 +12610,12 @@ włącza/wyłącza wyświetlanie spisu treści Menedżer biblioteki programu Qucs + + + Copyright (C) 2011-2015 Qucs Team + + + Copyright (C) 2005 by Michael Margraf @@ -16969,7 +12624,7 @@ włącza/wyłącza wyświetlanie spisu treści - + QucsLib Help Pomoc QucsLib @@ -16989,14 +12644,17 @@ włącza/wyłącza wyświetlanie spisu treści Model - - Search result - Wyniki szukania + + + + + Search results + - + - + @@ -17005,13 +12663,13 @@ włącza/wyłącza wyświetlanie spisu treści Błąd - + Cannot open "%1". Nie można otworzyć "%1". - + @@ -17019,21 +12677,6 @@ włącza/wyłącza wyświetlanie spisu treści Library is corrupt. Biblioteka jest uszkodzona. - - - Search Library Component - Szukaj elementu bibliotecznego - - - - Result - Wynik - - - - No appropriate component found. - Nie znaleziono odpowiednich elementów. - QucsSettingsDialog @@ -18050,7 +13693,7 @@ Edytuj szmbol dla tego schematu - + Error Błąd @@ -18068,7 +13711,7 @@ Set the admsXml location on the application settings. - + ERROR: Cannot create library file "%s". @@ -18077,83 +13720,46 @@ Set the admsXml location on the application settings. SearchDialog - - - - Dialog - - - - Text to search for - - - - Text to replace with - - - - Ask before replacing - - - - Case sensitive - - - - Whole words only - - - - Search backwards - - - - Next - - - - - Close Zamknij @@ -18167,29 +13773,6 @@ Set the admsXml location on the application settings. Search Text - - - The search result contains all components whose -name contains the search string. All libraries -are included in the search. - - - - - Search string: - - - - - Search - - - - - - Search result - Wyniki szukania - SettingsDialog @@ -18632,7 +14215,7 @@ are included in the search. SymbolWidget - + Symbol: @@ -18641,6 +14224,13 @@ are included in the search. ! Drag n'Drop me ! + + + Warning: Symbol '%1' missing in Qucs Library. +Drag and Drop may still work. +Please contact the developers. + + TextDoc diff --git a/qucs/translations/qucs_pt_BR.ts b/qucs/translations/qucs_pt_BR.ts index 5394e257f4..d5a0cce523 100644 --- a/qucs/translations/qucs_pt_BR.ts +++ b/qucs/translations/qucs_pt_BR.ts @@ -1109,10 +1109,6 @@ Save to file (Graphics format by extension) Salvar para arquivo (Formato gráfico por extensão) - - Width in pixels - Largura em pixels - Height in pixels @@ -1138,10 +1134,6 @@ Cancel Cancelar - - File - Arquivo - Width in pixels @@ -1187,10 +1179,6 @@ Export Schematic to Image - - Export to image - Exportar para imagem - Export diagram to raster or vector image @@ -3541,62 +3529,6 @@ Programa de computação de código de cores de resistor - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - @@ -3752,10 +3684,6 @@ Programa de computação de código de cores de resistor - - - - polarity @@ -3960,10 +3888,6 @@ Programa de computação de código de cores de resistor - - - - @@ -4104,5712 +4028,1483 @@ Programa de computação de código de cores de resistor Bond Wire - - bsim3v34nMOS verilog device - bsim4v30pMOS dispositivo verilog {3v?} {34n?} + + + + + + + + + + + simulation temperature + temperatura de simulação + + + + capacitor + capacitor + capacitance in Farad + capacitância em Farad + + + initial voltage for transient simulation + tensão inicial para simulação transiente + + + + + + + + schematic symbol + símbolo esquemático + + + + Capacitor + Capacitor + + + + current controlled current source + fonte de corrente controlada por corrente + + + + + + forward transfer factor + fator de transferência direta + + + + + + + + + + + + + + + delay time + tempo de atraso + + + + Current Controlled Current Source + Fonte de Corrente Controlada por Corrente + + + + current controlled voltage source + fonte de tensão controlada por corrente + + + + Current Controlled Voltage Source + Fonte de Tensão Controlada por Corrente + + + + circulator + circulador + + + + reference impedance of port 1 + impedância de referência da porta 1 + + + reference impedance of port 2 + impedância de referência da porta 2 + + + reference impedance of port 3 + impedância de referência da porta 3 + + + + Circulator + Circulador + + + + coaxial transmission line + linha de transmissão coaxial + + + + + relative permittivity of dielectric + permitividade relativa do dielétrico + + + + + specific resistance of conductor + resistência específica do condutor + + + + + relative permeability of conductor + permeabilidade relativa do condutor + + + inner diameter of shield + diâmetro interno da blindagem + + + diameter of inner conductor + diâmetro do condutor interno + + + + mechanical length of the line + comprimento mecânico da linha + + + + + + loss tangent + tangente de perda + + + + Coaxial Line + Linha Coaxial + + + + 1bit comparator verilog device + comparador 1bit dispositivo verilog + + + + 1Bit Comparator + Comparador 1Bit + + + + 2bit comparator verilog device + comparador 2bit dispositivo verilog + + + + 2Bit Comparator + Comparador 2Bit + + + + 4bit comparator verilog device + comparador 4bit dispositivo verilog + + + + 4Bit Comparator + Comparador 4Bit + + + + number of input ports + número de portas de entrada + + - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - simulation temperature - temperatura de simulação - - - - bsim3v34nMOS - bsim3v34nMOS - - - - bsim3v34pMOS verilog device - bsim3v34pMOS dispositivo verilog - - - - bsim3v34pMOS - bsim3v34pMOS - - - - bsim4v30nMOS verilog device - bsim4v30nMOS dispositivo verilog - - - - bsim4v30nMOS - bsim4v30nMOS - - - - bsim4v30pMOS verilog device - bsim4v30pMOS dispositivo verilog - - - - bsim4v30pMOS - bsim4v30pMOS - - - - capacitor - capacitor - - - - capacitance in Farad - capacitância em Farad - - - - initial voltage for transient simulation - tensão inicial para simulação transiente - - - - - - - - - schematic symbol - símbolo esquemático - - - - Capacitor - Capacitor - - - - current controlled current source - fonte de corrente controlada por corrente - - - - - - forward transfer factor - fator de transferência direta - - - - - - - - - - - - - - - delay time - tempo de atraso - - - - Current Controlled Current Source - Fonte de Corrente Controlada por Corrente - - - - current controlled voltage source - fonte de tensão controlada por corrente - - - - Current Controlled Voltage Source - Fonte de Tensão Controlada por Corrente - - - - circulator - circulador - - - - reference impedance of port 1 - impedância de referência da porta 1 - - - - reference impedance of port 2 - impedância de referência da porta 2 - - - - reference impedance of port 3 - impedância de referência da porta 3 - - - - Circulator - Circulador - - - - coaxial transmission line - linha de transmissão coaxial - - - - - relative permittivity of dielectric - permitividade relativa do dielétrico - - - - - - specific resistance of conductor - resistência específica do condutor - - - - - - relative permeability of conductor - permeabilidade relativa do condutor - - - - inner diameter of shield - diâmetro interno da blindagem - - - - diameter of inner conductor - diâmetro do condutor interno - - - - - mechanical length of the line - comprimento mecânico da linha - - - - - - - loss tangent - tangente de perda - - - - Coaxial Line - Linha Coaxial - - - - 1bit comparator verilog device - comparador 1bit dispositivo verilog - - - - 1Bit Comparator - Comparador 1Bit - - - - 2bit comparator verilog device - comparador 2bit dispositivo verilog - - - - 2Bit Comparator - Comparador 2Bit - - - - 4bit comparator verilog device - comparador 4bit dispositivo verilog - - - - 4Bit Comparator - Comparador 4Bit - - - - number of input ports - número de portas de entrada - - - - - - - voltage of high level - tensão no nível alto - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Error - Erro - - - - Format Error: -Wrong line start! - Erro de formato: -Linha inicial errada! - - - - Format Error: -Unknown component! -%1 - -Do you make use of loadable components? - Erro de formato: -Componente desconhecido! -%1 -Você utiliza componentes carregáveis dinamicamente? - - - - Format Error: -Wrong 'component' line format! - Erro de formato: -Formato da linha 'componente' errado! - - - - coplanar line - linha coplanar - - - - - - - - - - - - - - name of substrate definition - nome da definição do substrato - - - - - - - - - - - width of the line - largura da linha - - - - - - - width of a gap - largura da lacuna - - - - - - - length of the line - comprimento da linha - - - - - - - material at the backside of the substrate - material no lado posterior do substrato - - - - use approximation instead of precise equation - usar aproximação em vez de equação precisa - - - - Coplanar Line - Linha Coplanar - - - - ideal coupler - acoplador ideal - - - - coupling factor - fator de acoplamento - - - - phase shift of coupling path in degree - mudança de fase do caminho de acoplamento em grau - - - - Coupler - Acoplador - - - - coplanar gap - - - - - width of gap between the two lines - - - - - Coplanar Gap - - - - - coplanar open - - - - - width of gap at end of line - - - - - Coplanar Open - Coplanar Aberto - - - - coplanar short - curto coplanar - - - - Coplanar Short - Curto Coplanar - - - - coplanar step - coplanar degrau - - - - - - width of line 1 - largura de linha 1 - - - - - - width of line 2 - largura de linha 2 - - - - distance between ground planes - distância entre planos de terra - - - - Coplanar Step - Coplanar Degrau - - - - coupled transmission lines - linhas de transmissão acopladas - - - - characteristic impedance of even mode - impedância característica do mesmo par - - - - characteristic impedance of odd mode - impedância característica de modo ímpar - - - - - - - electrical length of the line - comprimento elétrico da linha - - - - relative dielectric constant of even mode - relativa constante dielétrica do mesmo par - - - - relative dielectric constant of odd mode - relativa constante dieléctrica de modo ímpar - - - - attenuation factor per length of even mode - fator de atenuação por comprimento do modo par - - - - attenuation factor per length of odd mode - fator de atenuação por comprimento de modo ímpar - - - - Coupled Transmission Line - Linha de Transmissão Acoplada - - - - D flip flop with asynchron reset - - - - - D-FlipFlop - D-FlipFlop - - - - - dc simulation - simulação cc - - - - - - - relative tolerance for convergence - tolerância relativa para convergência - - - - - - - absolute tolerance for currents - tolerância absoluta para correntes - - - - - - - absolute tolerance for voltages - tolerância absoluta para tensões - - - - put operating points into dataset - - - - - - - - maximum number of iterations until error - máximo número de iterações até ocorrer erro - - - - save subcircuit nodes into dataset - salvar nos do subcircuito no conjunto de dados - - - - preferred convergence algorithm - - - - - - - method for solving the circuit matrix - - - - - dc block - dc block - - - - dc Block - dc Block - - - - dc feed - dc feed - - - - dc Feed - dc Feed - - - - D flip flop with set and reset verilog device - - - - - - - - cross coupled gate transfer function high scaling factor - - - - - - - - cross coupled gate transfer function low scaling factor - - - - - - - - cross coupled gate delay - - - - - D-FlipFlop w/ SR - - - - - diac (bidirectional trigger diode) - diac (diodo trigger bidirecional) - - - - - (bidirectional) breakover voltage - tensão de ruptura (bidirecional) - - - - (bidirectional) breakover current - corrente de ruptura (bidirecional) - - - - - - parasitic capacitance - capacitância parasita - - - - - - - - emission coefficient - coeficiente de emissão - - - - - - intrinsic junction resistance - resistência de junção intrínseca - - - - Diac - Diac - - - - - digital simulation - simulação digital - - - - type of simulation - tipo de simulação - - - - duration of TimeList simulation - duração da simulação TimeList - - - - netlist format - formato da netlist - - - - - digital source - fonte digital - - - - - number of the port - número de portas - - - - initial output value - valor inicial de saída - - - - list of times for changing output value - lista de tempos para mudar o valor de saída - - - - diode - diodo - - - - - - zero-bias junction capacitance - capacitância da junção com zero polarização - - - - - - - - grading coefficient - coeficiente do gradiente da junção - - - - - - - junction potential - potencial de junção - - - - linear capacitance - capacitância linear - - - - recombination current parameter - parametro de corrente de recombinação - - - - emission coefficient for Isr - coeficiente de emissão para lsr - - - - ohmic series resistance - resistência ôhmica série - - - - - - transit time - tempo de transitório - - - - high-injection knee current (0=infinity) - - - - - - - reverse breakdown voltage - - - - - - - current at reverse breakdown voltage - - - - - Bv linear temperature coefficient - - - - - Rs linear temperature coefficient - - - - - Tt linear temperature coefficient - - - - - Tt quadratic temperature coefficient - - - - - M linear temperature coefficient - - - - - M quadratic temperature coefficient - - - - - - default area for diode - - - - - Diode - Diodo - - - - data voltage level shifter (digital to analogue) verilog device - - - - - - voltage level - nível de tensão - - - - - time delay - tempo de atraso - - - - D2A Level Shifter - - - - - data voltage level shifter (analogue to digital) verilog device - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - V - V - - - - A2D Level Shifter - - - - - 2to4 demultiplexer verilog device - - - - - 2to4 Demux - 2to4 Demux - - - - 3to8 demultiplexer verilog device - - - - - 3to8 Demux - 4to16 Demux {3t?} {8 ?} - - - - 4to16 demultiplexer verilog device - - - - - 4to16 Demux - 4to16 Demux - - - - externally controlled voltage source - fonte de tensão controlada externamente - - - - - voltage in Volts - tensão em Volts - - - - Externally Controlled Voltage Source - Fonte de Tensão Controlada Externamente - - - - EPFL-EKV MOS 2.6 verilog device - - - - - long = 1, short = 2 - - - - - length parameter - parâmetro de comprimento - - - - - - - - - - - - m - m - - - - Width parameter - Parâmetro de largura - - - - parallel multiple device number - - - - - series multiple device number - - - - - gate oxide capacitance per unit area - - - - - F/m**2 - F/m**2 - - - - metallurgical junction depth - - - - - channel width correction - - - - - channel length correction - - - - - long channel threshold voltage - - - - - body effect parameter - - - - - V**(1/2) - V**(1/2) - - - - bulk Fermi potential - - - - - - - transconductance parameter - parâmetro de transcondutância - - - - - A/V**2 - A/V**2 - - - - mobility reduction coefficient - - - - - - - - - - - - - 1/V - 1/V - - - - mobility coefficient - - - - - - - V/m - V/m - - - - - longitudinal critical field - - - - - depletion length coefficient - - - - - narrow-channel effect coefficient - - - - - reverse short channel charge density - - - - - A*s/m**2 - A*s/m**2 - - - - characteristic length - - - - - threshold voltage temperature coefficient - - - - - - - - - - - - - V/K - V/K - - - - mobility temperature coefficient - - - - - Longitudinal critical field temperature exponent - - - - - Ibb temperature coefficient - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1/K - 1/K - - - - heavily doped diffusion length - - - - - drain/source diffusion sheet resistance - - - - - Ohm/square - Ohm/quadrado - - - - source contact resistance - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Ohm - Ohm - - - - drain contact resistance - - - - - gate to source overlap capacitance - - - - - - - - F/m - F/m - - - - gate to drain overlap capacitance - - - - - gate to bulk overlap capacitance - - - - - first impact ionization coefficient - - - - - 1/m - 1/m - - - - second impact ionization coefficient - - - - - saturation voltage factor for impact ionization - - - - - area related theshold voltage mismatch parameter - - - - - V*m - V*m - - - - area related gain mismatch parameter - - - - - area related body effect mismatch parameter - - - - - sqrt(V)*m - sqrt(V)*m - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A - A - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - F - F - - - - - diode relative area - - - - - charge partition parameter - - - - - - - - - - - parameter measurement temperature - - - - - - - - - - - Celsius - Celsius - - - - EPFL-EKV NMOS 2.6 - EPFL-EKV NMOS 2.6 - - - - EPFL-EKV PMOS 2.6 - EPFL-EKV PMOS 2.6 - - - - equation defined device - - - - - type of equations - - - - - number of branches - - - - - - current equation - - - - - - charge equation - - - - - Equation Defined Device - - - - - equation - equação - - - - - - Equation - Equação - - - - put result into dataset - colocar resultado no conjunto de dados - - - - externally driven transient simulation - - - - - - integration method - metódo de integração - - - - - order of integration method - ordem do metódo de integração - - - - - initial step size in seconds - tamanho do passo inicial em segundos - - - - - minimum step size in seconds - tamanho minimo do passo em segundos - - - - - relative tolerance of local truncation error - - - - - - absolute tolerance of local truncation error - - - - - - overestimation of local truncation error - - - - - - relax time step raster - - - - - - perform an initial DC analysis - - - - - - maximum step size in seconds - - - - - External transient simulation - - - - - 1bit full adder verilog device - - - - - 1Bit FullAdder - - - - - 2bit full adder verilog device - - - - - 2Bit FullAdder - - - - - gated D latch verilog device - - - - - Gated D-Latch - - - - - 4bit Gray to binary converter verilog device - - - - - 4Bit Gray2Bin - - - - - ground (reference potential) - terra (potencial de referência) - - - - Ground - Terra - - - - gyrator (impedance inverter) - gyrator (inversor de impedância) - - - - gyrator ratio - razão do gyrator - - - - Gyrator - Gyrator - - - - 1bit half adder verilog device - - - - - 1Bit HalfAdder - - - - - Harmonic balance simulation - Simulação de equilíbrio harmônico - - - - number of harmonics - número de harmônicas - - - - Harmonic balance - Equilíbrio harmônico - - - - HBT model by Ferdinand-Braun-Institut (FBH), Berlin - - - - - - - - Ignored - Ignorado - - - - Device operating temperature, Celsius - - - - - Thermal resistance, K/W - - - - - - - - - - - - - - Thermal capacitance - - - - - Scaling factor, number of emitter fingers - - - - - Length of emitter finger, m - - - - - Width of emitter finger, m - - - - - Forward saturation current density, A/um^2 - - - - - Forward current emission coefficient - - - - - Forward thermal activation energy, V, (0 == disables temperature dependence) - - - - - B-E leakage saturation current density, A/um^2 - - - - - B-E leakage emission coefficient - - - - - Limiting resistor of B-E leakage diode, Ohm - - - - - B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - 2nd B-E leakage saturation current density, A/um^2 - - - - - 2nd B-E leakage emission coefficient - - - - - 2nd Limiting resistor of B-E leakage diode, Ohm - - - - - 2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Reverse saturation current density, A/um^2 - - - - - Reverse current emission coefficient - - - - - Reverse thermal activation energy, V, (0 == disables temperature dependence) - - - - - Fraction of Cjc that goes to internal base node - - - - - B-C leakage saturation current density, A/um^2 (0. switches off diode) - - - - - B-C leakage emission coefficient (0. switches off diode) - - - - - Limiting resistor of B-C leakage diode, Ohm - - - - - B-C leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Ideal forward beta - - - - - Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence) - - - - - Ideal reverse beta - - - - - Forward Early voltage, V, (0 == disables Early Effect) - - - - - Reverse Early voltage, V, (0 == disables Early Effect) - - - - - Forward high-injection knee current, A, (0 == disables Webster Effect) - - - - - Reverse high-injection knee current, A, (0 == disables Webster Effect) - - - - - C-E breakdown exponent, (0 == disables collector break-down) - - - - - C-E breakdown voltage, V, (0 == disables collector break-down) - - - - - C-E breakdown factor, (0 == disables collector break-down) - - - - - B-E breakdown voltage, V, (0 == disables emitter break-down) - - - - - Ideal reverse transit time, s - - - - - Extrinsic BC diffusion capacitance, F - - - - - Ideal forward transit time, s - - - - - Temperature coefficient of forward transit time - - - - - Excess transit time coefficient at base push-out - - - - - Smoothing parameter for Thcs - - - - - B-E zero-bias depletion capacitance, F/um^2 - - - - - B-E junction exponential factor - - - - - B-E junction built-in potential, V - - - - - B-C zero-bias depletion capacitance, F/um^2 - - - - - B-C junction exponential factor - - - - - B-C junction built-in potential, V - - - - - not used - - - - - Minimum B-C depletion capacitance (Vbc dependence), F/um^2 - - - - - Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction) - - - - - Fraction of Cmin, lower limit of BC capacitance (Ic dependence) - - - - - Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out) - - - - - Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out) - - - - - Slope of Jk at high currents , Ohm*um^2 - - - - - Voltage shift of base push-out onset, V - - - - - Collector resistance, Ohm/finger - - - - - Emitter resistance, Ohm/finger - - - - - Extrinsic base resistance, Ohm/finger - - - - - Inner Base ohmic resistance, Ohm/finger - - - - - Collector inductance, H - - - - - Emitter inductance, H - - - - - Base inductance, H - - - - - Extrinsic B-C capacitance, F - - - - - Extrinsic base capacitance, F - - - - - Extrinsic collector capacitance, F - - - - - - Flicker-noise coefficient - - - - - - Flicker-noise exponent - - - - - - Flicker-noise frequency exponent - - - - - Burst noise coefficient - - - - - Burst noise exponent - - - - - Burst noise corner frequency, Hz - + + + + voltage of high level + tensão no nível alto + + - Ambient temperature at which the parameters were determined - - - - - FBH HBT - FBH HBT - - - - HICUM Level 0 v1.12 verilog device - - - + + + + + + + + + + + - - - - (Modified) saturation current - - - - - - - - Non-ideality coefficient of forward collector current - - - - - - - - Non-ideality coefficient of reverse collector current - - - - - - - - - - - - - - - - forward Early voltage (normalization volt.) - - - - - - - - forward d.c. high-injection roll-off current - - - - - - - - inverse d.c. high-injection roll-off current - - - - - - - - high-injection correction current - - - - - - - high-injection correction factor - - - - - - - - BE saturation current - - - - - - - - BE non-ideality factor - - - - - - - - BE recombination saturation current - - - - - - - - BE recombination non-ideality factor - - - - - - - - BC saturation current - - - - - - - - BC non-ideality factor - - - - - - - - Zero-bias BE depletion capacitance - - - - - - - - BE built-in voltage - - - - - - - - BE exponent factor - - - - - - - - Ratio of maximum to zero-bias value - - - - - - - - low current transit time at Vbici=0 - - - - - - - - Base width modulation contribution - - - - - - - - SCR width modulation contribution - - - - - - - - Storage time in neutral emitter - - - - - - - - Exponent factor for emitter transit time - - - - - - - - Saturation time at high current densities - - - - - - - - Smoothing factor for current dependence - - - - - - - - Storage time at inverse operation - - - - - - - - Low-field collector resistance under emitter - - - - - - - - Voltage dividing ohmic and satur.region - - - - - - - - - - - - Punch-through voltage - - - - - - - - Saturation voltage - - - - - - - - Total zero-bias BC depletion capacitance - - - - - - - - BC built-in voltage - + + + + + + + + + + + + + + + + + + Error + Erro - - - - - BC exponent factor - + + Format Error: +Wrong line start! + Erro de formato: +Linha inicial errada! - - - - - Punch-through voltage of BC junction - + + Format Error: +Unknown component! +%1 + +Do you make use of loadable components? + Erro de formato: +Componente desconhecido! +%1 +Você utiliza componentes carregáveis dinamicamente? - - - - - Zero-bias external BC depletion capacitance - + + Format Error: +Wrong 'component' line format! + Erro de formato: +Formato da linha 'componente' errado! - - - - - External BC built-in voltage - + + coplanar line + linha coplanar - - - - - External BC exponent factor - + + + + + + + + + + + + name of substrate definition + nome da definição do substrato - - - - - Split factor = Cjci0/Cjc0 - + + + + + + + + + width of the line + largura da linha - - - - Internal base resistance at zero-bias - + + + + width of a gap + largura da lacuna - - - - - Geometry factor - + + + + + length of the line + comprimento da linha - - - - - - - - - External base series resistance - + + + + material at the backside of the substrate + material no lado posterior do substrato - - - - - - - - - Emitter series resistance - + use approximation instead of precise equation + usar aproximação em vez de equação precisa - - - - - - - - - - External collector series resistance - + + Coplanar Line + Linha Coplanar - - - - - - - - - - Substrate transistor transfer saturation current - + + ideal coupler + acoplador ideal - - - - - Substrate transistor transfer current non-ideality factor - + + coupling factor + fator de acoplamento - - - - SC saturation current - + phase shift of coupling path in degree + mudança de fase do caminho de acoplamento em grau - - - - - SC non-ideality factor - + + Coupler + Acoplador - - - - - Zero-bias SC depletion capacitance + + coplanar gap - - - - - SC built-in voltage + + width of gap between the two lines - - - - - External SC exponent factor + + Coplanar Gap - - - - - SC punch-through voltage + + coplanar open - - - - - Collector-base isolation (overlap) capacitance + + width of gap at end of line - - - - - Emitter-base oxide capacitance - + + Coplanar Open + Coplanar Aberto - - - - - Exponent factor - + + coplanar short + curto coplanar - - - - - Prefactor - + + Coplanar Short + Curto Coplanar - - - - - M^(1-AF) - M^(1-AF) + + coplanar step + coplanar degrau - - - - - flicker noise exponent factor - + + + + width of line 1 + largura de linha 1 - - - - Bandgap-voltage - - - - - - - - Effective emitter bandgap-voltage - + + + width of line 2 + largura de linha 2 - - - - - Effective collector bandgap-voltage - + + distance between ground planes + distância entre planos de terra - - - - - Effective substrate bandgap-voltage - + + Coplanar Step + Coplanar Degrau - - - - - Coefficient K1 in T-dependent bandgap equation - + + coupled transmission lines + linhas de transmissão acopladas - - - - - Coefficient K2 in T-dependent bandgap equation - + + characteristic impedance of even mode + impedância característica do mesmo par - - - - - Frist-order TC of tf0 - + + characteristic impedance of odd mode + impedância característica de modo ímpar - - - - - Second-order TC of tf0 - + + + + + electrical length of the line + comprimento elétrico da linha - - - - - - 1/K^2 - 1/K^2 + + relative dielectric constant of even mode + relativa constante dielétrica do mesmo par - - - - - - - - Exponent coefficient in transfer current temperature dependence - + relative dielectric constant of odd mode + relativa constante dieléctrica de modo ímpar - - - - Exponent coefficient in BE junction current temperature dependence - + attenuation factor per length of even mode + fator de atenuação por comprimento do modo par - - - - TC of epi-collector diffusivity - + attenuation factor per length of odd mode + fator de atenuação por comprimento de modo ímpar - - - - - Relative TC of satur.drift velocity - + + Coupled Transmission Line + Linha de Transmissão Acoplada - - - - - Relative TC of vces + + D flip flop with asynchron reset - - - - - TC of internal base resistance - + + D-FlipFlop + D-FlipFlop - - - - - TC of external base resistance - + + + dc simulation + simulação cc - - - - - TC of external collector resistance - + + + + + relative tolerance for convergence + tolerância relativa para convergência - - - - TC of emitter resistances - + + + + absolute tolerance for currents + tolerância absoluta para correntes - - - TC of avalanche prefactor - + + + + absolute tolerance for voltages + tolerância absoluta para tensões - - - - TC of avalanche exponential factor + + put operating points into dataset - - - - Flag for self-heating calculation - + + + + maximum number of iterations until error + máximo número de iterações até ocorrer erro - - - - - - - - - Thermal resistance - - - - - - - - - - - - K/W - K/W + save subcircuit nodes into dataset + salvar nos do subcircuito no conjunto de dados - - - - Ws/K - Ws/K - - - - - - - Temperature for which parameters are valid + preferred convergence algorithm - - - - - - - - - C - C + + + + method for solving the circuit matrix + - - - - - Temperature change for particular transistor - + + dc block + dc block - - - - - - - - - K - K + + dc Block + dc Block - - npn HICUM L0 v1.12 - npn HICUM L0 v1.12 + + dc feed + dc feed - - pnp HICUM L0 v1.12 - pnp HICUM L0 v1.12 + + dc Feed + dc Feed - - HICUM Level 2 v2.22 verilog device + + D flip flop with set and reset verilog device - - - - - GICCR constant + + + + cross coupled gate transfer function high scaling factor - - - - - A^2s + + + + + cross coupled gate transfer function low scaling factor - - - - - Zero-bias hole charge + + + + cross coupled gate delay - - - - - - - - - Coul + + D-FlipFlop w/ SR - - - - - - High-current correction for 2D and 3D effects - + + diac (bidirectional trigger diode) + diac (diodo trigger bidirecional) - - - - - - Emitter minority charge weighting factor in HBTs - + + + (bidirectional) breakover voltage + tensão de ruptura (bidirecional) - - - - - Collector minority charge weighting factor in HBTs - + (bidirectional) breakover current + corrente de ruptura (bidirecional) - - - - - B-E depletion charge weighting factor in HBTs - + + + parasitic capacitance + capacitância parasita - - - - - - B-C depletion charge weighting factor in HBTs - + + + + + + emission coefficient + coeficiente de emissão - - - - - Internal B-E saturation current - + + + intrinsic junction resistance + resistência de junção intrínseca - - - - - - Internal B-E current ideality factor - + + Diac + Diac - - - - - - Internal B-E recombination saturation current - + + + digital simulation + simulação digital - - - - - - Internal B-E recombination current ideality factor - + + type of simulation + tipo de simulação - - - - - Peripheral B-E saturation current - + duration of TimeList simulation + duração da simulação TimeList - - - - - - Peripheral B-E current ideality factor - + + netlist format + formato da netlist - - - - - - Peripheral B-E recombination saturation current - + + + digital source + fonte digital - - - - - - Peripheral B-E recombination current ideality factor - + + + number of the port + número de portas - - - - - Non-ideality factor for III-V HBTs - + initial output value + valor inicial de saída - - - - Base current recombination time constant at B-C barrier for high forward injection - + list of times for changing output value + lista de tempos para mudar o valor de saída - - - - - - Internal B-C saturation current - + + diode + diodo - - - - - - Internal B-C current ideality factor - + + + + zero-bias junction capacitance + capacitância da junção com zero polarização - - - - - External B-C saturation current - + + + + + grading coefficient + coeficiente do gradiente da junção - - - - - - External B-C current ideality factor - + + + + + junction potential + potencial de junção + + + + linear capacitance + capacitância linear - - - - - B-E tunneling saturation current - + recombination current parameter + parametro de corrente de recombinação - - - - - - Exponent factor for tunneling current - + + emission coefficient for Isr + coeficiente de emissão para lsr - - - - Specifies the base node connection for the tunneling current - + ohmic series resistance + resistência ôhmica série + + + + + + transit time + tempo de transitório - - - - - Avalanche current factor + high-injection knee current (0=infinity) - - - - - - Exponent factor for avalanche current + + + + reverse breakdown voltage - - - - - - Relative TC for FAVL + + + + current at reverse breakdown voltage - - - - - - Relative TC for QAVL + + Bv linear temperature coefficient - - - - - - Zero bias internal base resistance + + Rs linear temperature coefficient - - - - - - Factor for geometry dependence of emitter current crowding + + Tt linear temperature coefficient - - - - - Correction factor for modulation by B-E and B-C space charge layer + Tt quadratic temperature coefficient - - - - - Ratio of HF shunt to total internal capacitance (lateral NQS effect) + M linear temperature coefficient - - - - - Ration of internal to total minority charge + M quadratic temperature coefficient - - - - - - Forward ideality factor of substrate transfer current + + + default area for diode - - - - - - C-S diode saturation current + + Diode + Diodo + + + + data voltage level shifter (digital to analogue) verilog device - - - - - Ideality factor of C-S diode current - + + voltage level + nível de tensão - - - - - Transit time for forward operation of substrate transistor - + + time delay + tempo de atraso - - - - - - Substrate series resistance + + D2A Level Shifter - - - - - - Substrate shunt capacitance + + data voltage level shifter (analogue to digital) verilog device + + + + + + + + + + - - - - - Internal B-E zero-bias depletion capacitance - + + + + + + + + + + + + V + V - - - - - - Internal B-E built-in potential + + A2D Level Shifter - - - - - - Internal B-E grading coefficient + + 2to4 demultiplexer verilog device - - - - - - Ratio of maximum to zero-bias value of internal B-E capacitance - + + 2to4 Demux + 2to4 Demux - - - - - - Peripheral B-E zero-bias depletion capacitance + + 3to8 demultiplexer verilog device - - - - - - Peripheral B-E built-in potential - + + 3to8 Demux + 4to16 Demux {3t?} {8 ?} - - - - - - Peripheral B-E grading coefficient + + 4to16 demultiplexer verilog device - - - - - - Ratio of maximum to zero-bias value of peripheral B-E capacitance - + + 4to16 Demux + 4to16 Demux + + + + externally controlled voltage source + fonte de tensão controlada externamente + + + + + voltage in Volts + tensão em Volts - - - - - - Internal B-C zero-bias depletion capacitance - + + Externally Controlled Voltage Source + Fonte de Tensão Controlada Externamente - - - - - - Internal B-C built-in potential + + EPFL-EKV MOS 2.6 verilog device - - - - - - Internal B-C grading coefficient + + long = 1, short = 2 - - - - - Internal B-C punch-through voltage - + length parameter + parâmetro de comprimento + - - - - - External B-C zero-bias depletion capacitance - - - + - - - - - External B-C built-in potential - - - - - - - - External B-C grading coefficient - + + + + + m + m - - - - - - External B-C punch-through voltage - + + Width parameter + Parâmetro de largura - - - - Partitioning factor of parasitic B-C cap + parallel multiple device number - - - - Partitioning factor of parasitic B-E cap + series multiple device number - - - - - C-S zero-bias depletion capacitance - - - - - - - - - C-S built-in potential + gate oxide capacitance per unit area - - - - - - C-S grading coefficient - + + F/m**2 + F/m**2 - - - - - C-S punch-through voltage + metallurgical junction depth - - - - - Low current forward transit time at VBC=0V + channel width correction - - - - - Time constant for base and B-C space charge layer width modulation + channel length correction - - - - Time constant for modelling carrier jam at low VCE + long channel threshold voltage - - - - - Neutral emitter storage time + body effect parameter - - - - - - Exponent factor for current dependence of neutral emitter storage time - + + V**(1/2) + V**(1/2) - - - - - Saturation time constant at high current densities + bulk Fermi potential - - - - - Smoothing factor for current dependence of base and collector transit time - + + + transconductance parameter + parâmetro de transcondutância - - - - - - Partitioning factor for base and collector portion - + + + A/V**2 + A/V**2 - - - - - Internal collector resistance at low electric field - - - - - - - - - Voltage separating ohmic and saturation velocity regime + mobility reduction coefficient + + - - - - - Internal C-E saturation voltage - - - - - - - - Collector punch-through voltage - + + 1/V + 1/V - - - - - - Storage time for inverse operation + + mobility coefficient + - - - - - Total parasitic B-E capacitance - + + V/m + V/m - - - - - - Total parasitic B-C capacitance + + + longitudinal critical field - - - - - - Factor for additional delay time of minority charge + + depletion length coefficient - - - - - Factor for additional delay time of transfer current + narrow-channel effect coefficient - - - - - Flag for turning on and off of vertical NQS effect + + reverse short channel charge density - - - - - - Flicker noise coefficient - + + A*s/m**2 + A*s/m**2 - - - - - Flicker noise exponent factor + characteristic length - - - - - Flag for determining where to tag the flicker noise source + + threshold voltage temperature coefficient - - - - - - Scaling factor for collector minority charge in direction of emitter width - + + V/K + V/K - - - - - Scaling factor for collector minority charge in direction of emitter length + mobility temperature coefficient - - - - - Bandgap voltage extrapolated to 0 K - - - - - - - - - First order relative TC of parameter T0 - - - - - - - - - Second order relative TC of parameter T0 + Longitudinal critical field temperature exponent - - - - - Temperature exponent for RCI0 + Ibb temperature coefficient - - - - - - Relative TC of saturation drift velocity - + + 1/K + 1/K - - - - - - Relative TC of VCES + + heavily doped diffusion length - - - - - Temperature exponent of internal base resistance + drain/source diffusion sheet resistance - - - - - - Temperature exponent of external base resistance - + + Ohm/square + Ohm/quadrado - - - - - Temperature exponent of external collector resistance + source contact resistance - - - - - - Temperature exponent of emitter resistance - + + + + + + + + + + + + + Ohm + Ohm - - - - - - Temperature exponent of mobility in substrate transistor transit time + + drain contact resistance - - - - - Effective emitter bandgap voltage + + gate to source overlap capacitance + - - - - Effective collector bandgap voltage - + + + F/m + F/m - - - - - Effective substrate bandgap voltage + + gate to drain overlap capacitance - - - - Coefficient K1 in T-dependent band-gap equation + gate to bulk overlap capacitance - - - - - Coefficient K2 in T-dependent band-gap equation + + first impact ionization coefficient - - - - - Exponent coefficient in B-E junction current temperature dependence - + + 1/m + 1/m - - - - - Relative TC of forward current gain for V2.1 model + second impact ionization coefficient - - - - Flag for turning on and off self-heating effect + saturation voltage factor for impact ionization - - - - J/W - J/W + area related theshold voltage mismatch parameter + - - - - - Flag for compatibility with v2.1 model (0=v2.1) - + + V*m + V*m - - - - - Temperature at which parameters are specified + area related gain mismatch parameter - - - - - Temperature change w.r.t. chip temperature for particular transistor - - - - - HICUM L2 v2.22 - HICUM L2 v2.22 - - - - HICUM Level 0 v1.2 verilog device + area related body effect mismatch parameter - - - - reverse Early voltage (normalization volt.) - + + sqrt(V)*m + sqrt(V)*m + - - - flag for turning on base related critical current - + + + + + + + + + A + A - - - - Smoothing factor for the d.c. injection width - + + + + + + + + F + F - - - - BE charge built-in voltage for d.c. transfer current + + + diode relative area - - - - charge BE exponent factor for d.c. transfer current + + charge partition parameter - - - BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current - - - - - - TC of iqf + + + + + + + parameter measurement temperature - - - - Exponent factor for temperature dependent thermal resistance - + + + + + + + + Celsius + Celsius - - npn HICUM L0 v1.2 - npn HICUM L0 v1.2 + + EPFL-EKV NMOS 2.6 + EPFL-EKV NMOS 2.6 - pnp HICUM L0 v1.2 - pnp HICUM L0 v1.2 + EPFL-EKV PMOS 2.6 + EPFL-EKV PMOS 2.6 - - HICUM Level 0 v1.2g verilog device + + equation defined device - - high-injection roll-off current + + type of equations - - TC of iqf (bandgap coefficient of zero bias hole charge) + + number of branches - - TC of avalanche prefactor, identical to alfav of Hicum/L2 + + + current equation - - TC of avalanche exponential factor, identical to alqav of Hicum/L2 + + + charge equation - - Emitter part coefficient of the zero bias hole charge temperature variation + + Equation Defined Device - - Collector part coefficient of the zero bias hole charge temperature variation - + + equation + equação - - Bandgap TC parameter of ver - + + + + Equation + Equação - - Bandgap TC parameter of vef - + + put result into dataset + colocar resultado no conjunto de dados - - Specific recombination current at the BC barrier for high forward injection + + externally driven transient simulation - - npn HICUM L0 v1.2g - npn HICUM L0 v1.2g + + + integration method + metódo de integração - - pnp HICUM L0 v1.2g - pnp HICUM L0 v1.2g + + + order of integration method + ordem do metódo de integração - - HICUM Level 0 v1.3 verilog device - + + + initial step size in seconds + tamanho do passo inicial em segundos - - Flag for using third order solution for transfer current - + + + minimum step size in seconds + tamanho minimo do passo em segundos - bias dependence for reverse Early voltage - - - - - Flag for turning temperature dependence of tef0 on and off + + relative tolerance of local truncation error - TC of Reverse Early voltage + + absolute tolerance of local truncation error - TC of AVER + + overestimation of local truncation error - - Bandgap difference between base and BE-junction + + + relax time step raster - Frist-order TC of iqfh + + perform an initial DC analysis - - Second-order TC of iqfh + + + maximum step size in seconds - - npn HICUM L0 v1.3 - npn HICUM L0 v1.3 - - - - pnp HICUM L0 v1.3 - pnp HICUM L0 v1.3 - - - - HICUM Level 2 v2.1 verilog device + + External transient simulation - - Partitioning factor of parasitic B-C capacitance + + 1bit full adder verilog device - - Noise factor for internal base resistance + + 1Bit FullAdder - - HICUM L2 v2.1 - HICUM L2 v2.1 - - - - HICUM Level 2 v2.23 verilog device + + 2bit full adder verilog device - - HICUM L2 v2.23 - HICUM L2 v2.23 - - - - HICUM Level 2 v2.24 verilog device + + 2Bit FullAdder - - HICUM L2 v2.24 - HICUM L2 v2.24 - - - - hicumL2V2p31n verilog device + + gated D latch verilog device - - Weight factor for the low current minority charge + + Gated D-Latch - - Parameter describing the slope of hjEi(VBE) + + 4bit Gray to binary converter verilog device - - Smoothing parameter for hjEi(VBE) at high voltage + + 4Bit Gray2Bin - - Time constant for modeling carrier jam at low VCE - + + ground (reference potential) + terra (potencial de referência) - Barrier voltage - - - - - Normalization parameter - - - - - Smoothing parameter for barrier voltage - - - - - fitting factor for critical current - - - - - Flag for turning on and off of correlated noise implementation - + Ground + Terra - - Emitter resistance flicker noise coefficient - + + gyrator (impedance inverter) + gyrator (inversor de impedância) - - Emitter resistance flicker noise exponent factor - + + gyrator ratio + razão do gyrator - - Bandgap difference between B and B-E junction used for hjEi0 and hf0 - + + Gyrator + Gyrator - - Temperature coefficient for ahjEi + + 1bit half adder verilog device - - Temperature coefficient for hjEi0 + + 1Bit HalfAdder - - Temperature coefficient for Rth - + + Harmonic balance simulation + Simulação de equilíbrio harmônico - - First order relative TC of parameter Rth - + + number of harmonics + número de harmônicas - - HICUM L2 V2.31 - HICUM L2 V2.31 + + Harmonic balance + Equilíbrio harmônico @@ -12100,7 +7795,7 @@ Formato da linha 'componente' errado! - + ERROR: No file name in SPICE component "%1". ERRO: Sem nome de arquivo no componente SPICE %1". @@ -12523,11 +8218,15 @@ Formato da linha 'componente' errado! Fonte de Corrente Controlada por Tensão - voltage controlled voltage source fonte de tensão controlada por tensão + + + voltage controlled resistor + + resistance gain @@ -12562,7 +8261,7 @@ Formato da linha 'componente' errado! - + ERROR: No file name in %1 component "%2". ERRO: Sem nome de arquivo em %1 componente "%2". @@ -12725,7 +8424,7 @@ Formato da linha 'componente' errado! <inválido> - + invalid inválido @@ -12834,7 +8533,7 @@ Formato da linha 'componente' errado! - + Successfully exported @@ -12858,8 +8557,8 @@ Use gráficos PNG, JPEG ou SVG! - - + + verilog-a user devices @@ -12918,14 +8617,14 @@ Use gráficos PNG, JPEG ou SVG! - + diagrams diagramas - + paintings desenhos @@ -13044,16 +8743,16 @@ Defina a localização do Octave nas configurações do aplicativo. - + - + untitled Sem título - + Format Error: 'Painting' field is not closed! @@ -13231,17 +8930,17 @@ Campo desconhecido! ERRO: Não é possível carregar o subcircuito "%1". - + WARNING: Skipping library component "%1". AVISO: Pulando componente de biblioteca "%1". - - ERROR: Cannot load library component "%1". - ERRO: Não é possível carregar componete da biblioteca "%1". + + ERROR: "%1": Cannot load library component "%2" from "%3" + - + WARNING: Ignore simulation component in subcircuit "%1". AVISO: Ignorar componente de simulação no subcircuito "%1". @@ -13251,7 +8950,7 @@ Campo desconhecido! - + ERROR: Only one digital simulation allowed. ERRO: Apenas uma simulação digital é permitida. @@ -13369,11 +9068,17 @@ a substrate with lower permittivity and larger height. Cannot save settings file ! Não pode salvar o arquivo de configurações! + + + Quarter wave filters do not allow low-pass nor high-pass masks + + + QucsActiveFilter - + &File Arquivo @@ -13383,7 +9088,29 @@ a substrate with lower permittivity and larger height. Sair - + + &View + + + + + &Console + + + + + Enables/disables the filter calculation console + + + + + Console + +Enables/disables the filter calculation console + + + + &Help Ajuda @@ -13403,30 +9130,30 @@ a substrate with lower permittivity and larger height. Sobre Qt... - - + + Passband attenuation, Ap (dB) - + Stopband attenuation, As (dB) - - Cuttof frequency, Fc (Hz) + + Cutoff frequency, Fc (Hz) - - + + Stopband frequency, Fs (Hz) - + Passband ripple Rp(dB) @@ -13436,7 +9163,7 @@ a substrate with lower permittivity and larger height. - + Filter order Ordem do filtro @@ -13456,42 +9183,81 @@ a substrate with lower permittivity and larger height. Chebyshev - - Inverse Chebyshev - Chebyshev inverso + + Inverse Chebyshev + Chebyshev inverso + + + + Cauer (Elliptic) + Cauer (Elíptico) + + + + Bessel + + + + + User defined + + + + + Manually define transfer function + + + + + Calculate and copy to clipboard + + + + + Low Pass + + + + + General filter amplitude-frequency response + - - Cauer (Elliptic) - Cauer (Elíptico) + + + + Unable to implement filter with such parameters and topology +Change parameters and/or topology and try again! + - - Bessel + + + Filter calculation was successful - - User defined + + Filter calculation terminated with error! - - Manually define transfer function + + Filter calculation terminated with error - - Calculate and copy to clipboard + + Lower cutoff frequency, Fl (Hz) - - Calculation console - + + Copyright (C) 2014, 2015 by + Direitos autorais (C) 2005, 2006 by {2014, 2015 ?} - + Filter topology Topologia do filtro @@ -13501,12 +9267,7 @@ a substrate with lower permittivity and larger height. Tipo de filtro: - - LowPass - LowPass - - - + High Pass Passa alta @@ -13532,62 +9293,45 @@ a substrate with lower permittivity and larger height. - + Cauer section - - General amplitude frequency response - - - - - Filter topology preview (one stage) - - - - + Filter parameters - + Transfer function and Topology - - General filter amplidure-frequency response - - - - + Filter topology preview - + Filter calculation console - + + + Ready. + Pronto. + + + Upper cutoff frequency of band-pass/band-stop filter is less than lower. Unable to implement such filter. Change parameters and try again. - - - - Unable to implement filter with such parameters and topology -Change parapeters and/or topology and try again! - - - - + Unable to use Cauer section for Chebyshev or Butterworth frequency response. Try to use another topology. @@ -13603,40 +9347,28 @@ frequency response. Try to use another topology. Function will be implemented in future version - - - -Filter calculation was sucessfull - - - - - -Filter calculation terminated with error - - Upper cutoff frequency, Fu (Hz) - - Lower cuttoff frequency, Fl (Hz) + + Transient bandwidth, TW (Hz) - - Transient bandwidth, TW (Hz) + + Error! - + Active filter design - + About... Sobre... @@ -13650,12 +9382,7 @@ Programa de síntese de filtro ativo - - Copyright (C) 2014 by - Copyright (C) 2014 por - - - + About Qt Sobre Qt @@ -13663,7 +9390,7 @@ Programa de síntese de filtro ativo QucsApp - + Schematic Esquema elétrico @@ -13679,42 +9406,42 @@ Programa de síntese de filtro ativo - + VHDL Sources Fontes VHDL - - + + Verilog Sources Fontes Verilog - - + + Verilog-A Sources Fontes Verilog-A - - + + Octave Scripts Scripts Octave: - + Spice Files Arquivos Spice - + Any File Qualquer Arquivo - + The schematic search path has been refreshed. @@ -13734,7 +9461,7 @@ Programa de síntese de filtro ativo Esquema elétrico - + New Novo @@ -13819,13 +9546,13 @@ Programa de síntese de filtro ativo - + - + @@ -13848,7 +9575,7 @@ Programa de síntese de filtro ativo Erro - + Cannot open "%1". Não é possível abrir "%1". @@ -13860,8 +9587,16 @@ Programa de síntese de filtro ativo Biblioteca corrupta. - - + + + + + Search results + + + + + @@ -13880,13 +9615,18 @@ Programa de síntese de filtro ativo Informação - + Default icon not found: %1.png - + + verilog-a user devices + + + + -port -porta @@ -13897,13 +9637,13 @@ Programa de síntese de filtro ativo - + The document contains unsaved changes! Este documento contém modificações a salvar! - + Do you want to save the changes before copying? @@ -13914,13 +9654,13 @@ Programa de síntese de filtro ativo - + &Save &Salvar - + Copy file @@ -13954,31 +9694,31 @@ Programa de síntese de filtro ativo - + Warning Aviso - + This will delete the file permanently! Continue ? Isto irá apagar o arquivo permanentemente! Continuar? - + No Não - + - + Yes Sim - + unknown desconhecido @@ -14139,7 +9879,7 @@ Programa de síntese de filtro ativo - + @@ -14153,7 +9893,7 @@ Programa de síntese de filtro ativo Pronto. - + Creating new text editor... Criando novo editor de texto... @@ -14218,12 +9958,12 @@ Programa de síntese de filtro ativo - + Cancel Cancelar - + Cannot overwrite an open document Não é possível sobreescrever um documento aberto! @@ -14238,7 +9978,7 @@ Programa de síntese de filtro ativo Salvando todos arquivos... - + Closing file... Fechando arquivo... @@ -14262,10 +10002,6 @@ Programa de síntese de filtro ativo Open examples directory... Abrir diretório de exemplos - - OK - OK - Printing... @@ -15065,10 +10801,6 @@ Searches for a piece of text Busca por uma porção de texto - - Export as image - Exportar como imagem - Export as image... @@ -16226,122 +11958,6 @@ Sobre Qt da Trolltech Warnings in last simulation! Press F5 Avisos na última simulação! Pressione F5 - - About... - Sobre... - - - Qucs Version - Versão do Qucs - - - Quite Universal Circuit Simulator - Simulador de Circuitos Totalmente Universal - - - Copyright (C) - Direitos autorais (C) - - - by Michael Margraf - por Michael Margraf - - - Qucs Team - Equipe Qucs - - - Simulator by Stefan Jahn - Simulador por Stefan Jahn - - - VHDL simulator 'FreeHDL' by Edwin Naroska and Marius Vollmer - Simulador VHDL 'FreeHDL' por Edwin Naroska e Marius Vollmer - - - Special thanks to Jens Flucke and Raimund Jacob - Agradecimentos especiais para Jens Flucke e Raimund Jacob - - - Many thanks to Mike Brinson for correcting the VHDL output - Muitos agradecimentos a Mike Brinson por corrigir a saída do VHDL - - - GUI improvements by Gopala Krishna A - Aperfeiçoamentos da interface gráfica por Gopala Krishna A - - - Verilog-AMS interface by Helene Parruitte - Interface Verilog-AMS por Helene Parruitte - - - Translations: - Traduções: - - - German by Stefan Jahn - Alemão por Stefan Jahn - - - Polish by Dariusz Pienkowski - Polonês por Dariusz Pienkowski - - - Romanian by Radu Circa - Romeno por Radu Circa - - - French by Vincent Habchi, F5RCS - Francês por Vincent Habchi, F5RCS - - - Spanish by Jose L. Redrejo Rodriguez - Espanhol por Jose L. Redrejo Rodriguez - - - Japanese by Toyoyuki Ishikawa - Japanês por Toyoyuki Ishikawa - - - Italian by Giorgio Luparia and Claudio Girardi - Italiano por Giorgio Luparia e Claudio Girardi - - - Hebrew by Dotan Nahum - Hebreu por Dotan Nahum - - - Swedish by Peter Landgren - Suéco por Peter Landgren - - - Turkish by Onur and Ozgur Cobanoglu - Turco por Onur e Ozgur Cobanoglu - - - Hungarian by Jozsef Bus - Húngaro por Jozsef Bus - - - Russian by Igor Gorbounov - Russo por Igor Gorbounov - - - Czech by Marek Straka - Tcheco por Marek Straka - - - Catalan by Antoni Subirats - Catalão por Antoni Subirats - - - Arabic by Chabane Noureddine - Arabic by Chabane Noureddine - - - Kazakh by Erbol Keshubaev - Kazakh by Erbol Keshubaev - QucsAttenuator @@ -16608,7 +12224,7 @@ Editor muito simples para Qucs QucsFilter - + &File &Arquivo @@ -16648,7 +12264,7 @@ Editor muito simples para Qucs - + Filter type: Tipo de filtro: @@ -16684,29 +12300,29 @@ Editor muito simples para Qucs - + Corner frequency: Freqüência de corte: - + Stop frequency: Freqüência final: - + Stop band frequency: Freqüência Rejeita-faixa: - - + + Pass band ripple: Ripple Passa-banda: - + Stop band attenuation: Atenuação Rejeita-faixa: @@ -16774,19 +12390,19 @@ Filter synthesis program - + Result: Resultado: - + Error Erro - + Stop frequency must be greater than start frequency. Freqüência de parada deve ser maior do que a freqüência de início. @@ -16943,17 +12559,22 @@ Ativar/desativar o sumário Sobre - + Component Selection Seleção de Componente - - Search... - Pesquisar... + + Search Lib Components + - + + Clear + Limpar + + + Component Componente @@ -16968,7 +12589,7 @@ Ativar/desativar o sumário Mostrar Modelo - + About... Sobre... @@ -16978,6 +12599,12 @@ Ativar/desativar o sumário Gerenciador de Biblioteca para Qucs + + + Copyright (C) 2011-2015 Qucs Team + + + Copyright (C) 2005 by Michael Margraf @@ -16986,7 +12613,7 @@ Ativar/desativar o sumário - + QucsLib Help QucsLib Ajuda @@ -17006,14 +12633,17 @@ Ativar/desativar o sumário Modelo - - Search result - Pesquisar resultado + + + + + Search results + - + - + @@ -17022,13 +12652,13 @@ Ativar/desativar o sumário Erro - + Cannot open "%1". Não é possível abrir "%1". - + @@ -17036,21 +12666,6 @@ Ativar/desativar o sumário Library is corrupt. Biblioteca corrupta. - - - Search Library Component - Procurar Biblioteca de Componentes - - - - Result - Resultado - - - - No appropriate component found. - Nenhum componente apropriado encontrado. - QucsSettingsDialog @@ -18067,7 +13682,7 @@ Edita o símbolo para este esquemático genérico - + Error Erro @@ -18087,7 +13702,7 @@ Definir o local de admsXml sobre as configurações do aplicativo. Status - + ERROR: Cannot create library file "%s". ERRO: Não pôde criar o arquivo de biblioteca "%s". @@ -18096,83 +13711,46 @@ Definir o local de admsXml sobre as configurações do aplicativo. SearchDialog - - - - Dialog Caixa de diálogo - - - - Text to search for Texto a procurar - - - - Text to replace with Texto para substituir - - - - Ask before replacing Perguntar antes de substituir - - - - Case sensitive Diferenciar maiúsculas e minúsculas - - - - Whole words only Apenas palavras inteiras - - - - Search backwards Procurar para trás - - - - Next Próximo - - - - - Close Fechar @@ -18186,31 +13764,6 @@ Definir o local de admsXml sobre as configurações do aplicativo. Search Text Procurar Texto - - - The search result contains all components whose -name contains the search string. All libraries -are included in the search. - O resultado da pesquisa contém todos os componentes cujo -mone contém o testo pesquisado. Todas bibliotecas -estão incluidas na busca. - - - - Search string: - Texto a pesquisar: - - - - Search - Procurar - - - - - Search result - Resultado da pesquisa - SettingsDialog @@ -18492,12 +14045,6 @@ estão incluidas na busca. Simulation aborted by the user! - - Errors: -------- - Erros: -------- - SpiceDialog @@ -18660,7 +14207,7 @@ estão incluidas na busca. SymbolWidget - + Symbol: Símbolo: @@ -18669,6 +14216,13 @@ estão incluidas na busca. ! Drag n'Drop me ! ! Arraste e Solte me ! + + + Warning: Symbol '%1' missing in Qucs Library. +Drag and Drop may still work. +Please contact the developers. + + TextDoc diff --git a/qucs/translations/qucs_pt_PT.ts b/qucs/translations/qucs_pt_PT.ts index 3ccd1c3693..0c1903f019 100644 --- a/qucs/translations/qucs_pt_PT.ts +++ b/qucs/translations/qucs_pt_PT.ts @@ -1108,10 +1108,6 @@ Save to file (Graphics format by extension) Gravar no ficheiro (formato baseado na extensão) - - Width in pixels - Largura em pixels - Height in pixels @@ -1137,10 +1133,6 @@ Cancel Cancelar - - File - Ficheiro - Width in pixels @@ -1186,10 +1178,6 @@ Export Schematic to Image - - Export to image - Exportar como imagem - Export diagram to raster or vector image @@ -3537,62 +3525,6 @@ Resistor color code computation program - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - @@ -3748,10 +3680,6 @@ Resistor color code computation program - - - - polarity @@ -3956,10 +3884,6 @@ Resistor color code computation program - - - - @@ -4100,5708 +4024,1479 @@ Resistor color code computation program - - bsim3v34nMOS verilog device + + + + + + + + + + + simulation temperature + + + capacitor + Condensador + + capacitance in Farad + Capacidade em Farad + + + initial voltage for transient simulation + Tensão inicial para simulação transiente + + + + + + + + schematic symbol + símbolo no esquemático + + + + Capacitor + Condensador + + + + current controlled current source + Fonte de corrente controlada por corrente + + + + + + forward transfer factor + Ganho (A/A) + + + + + + + + + + + + + + + delay time + atraso + + + + Current Controlled Current Source + Fonte de corrente controlada por corrente + + + + current controlled voltage source + Fonte de tensão controlada por corrente + + + + Current Controlled Voltage Source + Fonte de tensão controlada por corrente + + + + circulator + Circulador + + + + reference impedance of port 1 + Impedância característica do porto 1 + + + reference impedance of port 2 + Impedância característica do porto 2 + + + reference impedance of port 3 + Impedância característica do porto 3 + + + + Circulator + Circulador + + + + coaxial transmission line + Linha de transmissão coaxial + + + + + relative permittivity of dielectric + Permitividade relativa do dieléctrico + + + + + specific resistance of conductor + Resistência do conductor + + + + + relative permeability of conductor + Permeabilidade relativa do conductor + + + inner diameter of shield + Diâmetro interno da armadura + + + diameter of inner conductor + diâmetro do conductor interno + + + + mechanical length of the line + comprimento mecânico da linha + + + + + + loss tangent + tangente de perdas + + + + Coaxial Line + Cabo coaxial + + + + 1bit comparator verilog device + + + + + 1Bit Comparator + + + + + 2bit comparator verilog device + + + + + 2Bit Comparator + + + + + 4bit comparator verilog device + + + + + 4Bit Comparator + + + + + number of input ports + + + - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - simulation temperature - - - - - bsim3v34nMOS - - - - - bsim3v34pMOS verilog device - - - - - bsim3v34pMOS - - - - - bsim4v30nMOS verilog device - - - - - bsim4v30nMOS - - - - - bsim4v30pMOS verilog device - - - - - bsim4v30pMOS - - - - - capacitor - Condensador - - - - capacitance in Farad - Capacidade em Farad - - - - initial voltage for transient simulation - Tensão inicial para simulação transiente - - - - - - - - - schematic symbol - símbolo no esquemático - - - - Capacitor - Condensador - - - - current controlled current source - Fonte de corrente controlada por corrente - - - - - - forward transfer factor - Ganho (A/A) - - - - - - - - - - - - - - - delay time - atraso - - - - Current Controlled Current Source - Fonte de corrente controlada por corrente - - - - current controlled voltage source - Fonte de tensão controlada por corrente - - - - Current Controlled Voltage Source - Fonte de tensão controlada por corrente - - - - circulator - Circulador - - - - reference impedance of port 1 - Impedância característica do porto 1 - - - - reference impedance of port 2 - Impedância característica do porto 2 - - - - reference impedance of port 3 - Impedância característica do porto 3 - - - - Circulator - Circulador - - - - coaxial transmission line - Linha de transmissão coaxial - - - - - relative permittivity of dielectric - Permitividade relativa do dieléctrico - - - - - - specific resistance of conductor - Resistência do conductor - - - - - - relative permeability of conductor - Permeabilidade relativa do conductor - - - - inner diameter of shield - Diâmetro interno da armadura - - - - diameter of inner conductor - diâmetro do conductor interno - - - - - mechanical length of the line - comprimento mecânico da linha - - - - - - - loss tangent - tangente de perdas - - - - Coaxial Line - Cabo coaxial - - - - 1bit comparator verilog device - - - - - 1Bit Comparator - - - - - 2bit comparator verilog device - - - - - 2Bit Comparator - - - - - 4bit comparator verilog device - - - - - 4Bit Comparator - - - - - number of input ports - - - - - - - - voltage of high level - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Error - Erro - - - - Format Error: -Wrong line start! - - - - - Format Error: -Unknown component! -%1 - -Do you make use of loadable components? - - - - - Format Error: -Wrong 'component' line format! - - - - - coplanar line - Linha coplanar - - - - - - - - - - - - - - name of substrate definition - Nome da definição de substracto - - - - - - - - - - - width of the line - Largura da pista - - - - - - - width of a gap - Distância entre pistas - - - - - - - length of the line - Comprimento da pista - - - - - - - material at the backside of the substrate - Material do outro lado do substracto - - - - use approximation instead of precise equation - Usar modelo aproximado - - - - Coplanar Line - Linha Coplanar - - - - ideal coupler - Coupler ideal - - - - coupling factor - Factor de acoplamento - - - - phase shift of coupling path in degree - Atraso de fase ao longo do caminho acoplado, em graus - - - - Coupler - Coupler - - - - coplanar gap - Separação coplanar - - - - width of gap between the two lines - Largura da separação entre as duas linhas - - - - Coplanar Gap - Separação Coplanar - - - - coplanar open - Circuito Aberto Coplanar - - - - width of gap at end of line - Largura da separação no fim da linha - - - - Coplanar Open - Circuito Aberto Coplanar - - - - coplanar short - Curto-Circuito Coplanar - - - - Coplanar Short - Curto-Circuito Coplanar - - - - coplanar step - Degrau Coplanar - - - - - - width of line 1 - Largura da Linha 1 - - - - - - width of line 2 - Largura da Linha 2 - - - - distance between ground planes - Distância entre planos de massa - - - - Coplanar Step - Degrau Coplanar - - - - coupled transmission lines - Linhas Acopladas - - - - characteristic impedance of even mode - Impedância característica em modo comum (par) - - - - characteristic impedance of odd mode - Impedância característica em modo diferencial (ímpar) - - - - - - - electrical length of the line - comprimento eléctrico da linha - - - - relative dielectric constant of even mode - constante dieléctrica relativa em modo comum (par) - - - - relative dielectric constant of odd mode - constante dieléctrica relativa em modo diferencial (ímpar) - - - - attenuation factor per length of even mode - constante de atenuação por unidade de comprimento em modo comum - - - - attenuation factor per length of odd mode - constante de atenuação por unidade de comprimento em modo diferencial - - - - Coupled Transmission Line - Linha de Transmissão Acoplada - - - - D flip flop with asynchron reset - - - - - D-FlipFlop - - - - - - dc simulation - Simulação DC - - - - - - - relative tolerance for convergence - Tolerância relativa para convergência - - - - - - - absolute tolerance for currents - Tolerância absoluta para as correntes - - - - - - - absolute tolerance for voltages - Tolerância absoluta para as tensões - - - - put operating points into dataset - Guardar ponto de polarização no dataset - - - - - - - maximum number of iterations until error - Número máximo de iterações até dar erro - - - - save subcircuit nodes into dataset - Guardar tensões dos nós dos subcircuitos no dataset - - - - preferred convergence algorithm - Algoritmo favorito para convergir - - - - - - method for solving the circuit matrix - Método de resolução da matriz - - - - dc block - - - - - dc Block - DC Block - - - - dc feed - DC Feed - - - - dc Feed - DC Feed - - - - D flip flop with set and reset verilog device - - - - - - - - cross coupled gate transfer function high scaling factor - - - - - - - - cross coupled gate transfer function low scaling factor - - - - - - - - cross coupled gate delay - - - - - D-FlipFlop w/ SR - - - - - diac (bidirectional trigger diode) - - - - - - (bidirectional) breakover voltage - - - - - (bidirectional) breakover current - - - - - - - parasitic capacitance - - - - - - - - - emission coefficient - - - - - - - intrinsic junction resistance - - - - - Diac - - - - - - digital simulation - Simulação Digital - - - - type of simulation - - - - - duration of TimeList simulation - - - - - netlist format - - - - - - digital source - - - - - - number of the port - - - - - initial output value - - - - - list of times for changing output value - - - - - diode - Díodo - - - - - - zero-bias junction capacitance - - - - - - - - - grading coefficient - - - - - - - - junction potential - - - - - linear capacitance - - - - - recombination current parameter - - - - - emission coefficient for Isr - - - - - ohmic series resistance - - - - - - - transit time - - - - - high-injection knee current (0=infinity) - - - - - - - reverse breakdown voltage - - - - - - - current at reverse breakdown voltage - - - - - Bv linear temperature coefficient - - - - - Rs linear temperature coefficient - - - - - Tt linear temperature coefficient - - - - - Tt quadratic temperature coefficient - - - - - M linear temperature coefficient - - - - - M quadratic temperature coefficient - - - - - - default area for diode - - - - - Diode - Díodo - - - - data voltage level shifter (digital to analogue) verilog device - - - - - - voltage level - - - - - - time delay - - - - - D2A Level Shifter - - - - - data voltage level shifter (analogue to digital) verilog device - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - V - - - - - A2D Level Shifter - - - - - 2to4 demultiplexer verilog device - - - - - 2to4 Demux - - - - - 3to8 demultiplexer verilog device - - - - - 3to8 Demux - - - - - 4to16 demultiplexer verilog device - - - - - 4to16 Demux - - - - - externally controlled voltage source - - - - - - voltage in Volts - - - - - Externally Controlled Voltage Source - - - - - EPFL-EKV MOS 2.6 verilog device - - - - - long = 1, short = 2 - - - - - length parameter - - - - - - - - - - - - - m - - - - - Width parameter - - - - - parallel multiple device number - - - - - series multiple device number - - - - - gate oxide capacitance per unit area - - - - - F/m**2 - - - - - metallurgical junction depth - - - - - channel width correction - - - - - channel length correction - - - - - long channel threshold voltage - - - - - body effect parameter - - - - - V**(1/2) - - - - - bulk Fermi potential - - - - - - - transconductance parameter - - - - - - A/V**2 - - - - - mobility reduction coefficient - - - - - - - - - - - - - 1/V - - - - - mobility coefficient - - - - - - - V/m - - - - - - longitudinal critical field - - - - - depletion length coefficient - - - - - narrow-channel effect coefficient - - - - - reverse short channel charge density - - - - - A*s/m**2 - - - - - characteristic length - - - - - threshold voltage temperature coefficient - - - - - - - - - - - - - V/K - - - - - mobility temperature coefficient - - - - - Longitudinal critical field temperature exponent - - - - - Ibb temperature coefficient - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1/K - - - - - heavily doped diffusion length - - - - - drain/source diffusion sheet resistance - - - - - Ohm/square - - - - - source contact resistance - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Ohm - - - - - drain contact resistance - - - - - gate to source overlap capacitance - - - - - - - - F/m - - - - - gate to drain overlap capacitance - - - - - gate to bulk overlap capacitance - - - - - first impact ionization coefficient - - - - - 1/m - - - - - second impact ionization coefficient - - - - - saturation voltage factor for impact ionization - - - - - area related theshold voltage mismatch parameter - - - - - V*m - - - - - area related gain mismatch parameter - - - - - area related body effect mismatch parameter - - - - - sqrt(V)*m - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - F - - - - - - diode relative area - - - - - charge partition parameter - - - - - - - - - - - parameter measurement temperature - - - - - - - - - - - Celsius - - - - - EPFL-EKV NMOS 2.6 - - - - - EPFL-EKV PMOS 2.6 - - - - - equation defined device - Dispositivo Definido por Equações - - - - type of equations - Tipo de equações - - - - number of branches - Número de portos - - - - - current equation - Equação de corrente - - - - - charge equation - Equação de carga - - - - Equation Defined Device - Dispositivo Definido por Equações - - - - equation - Equação - - - - - - Equation - Equação - - - - put result into dataset - Guardar resultado no dataset - - - - externally driven transient simulation - Transiente externo - - - - - integration method - Método de integração - - - - - order of integration method - Ordem do método de integração - - - - - initial step size in seconds - Passo inicial em segundos - - - - - minimum step size in seconds - Passo mínimo em segundos - - - - - relative tolerance of local truncation error - Tolerância relativa do erro de truncatura local - - - - - absolute tolerance of local truncation error - Tolerância absoluta do erro de truncatura local - - - - - overestimation of local truncation error - - - - - - relax time step raster - - - - - - perform an initial DC analysis - - - - - - maximum step size in seconds - - - - - External transient simulation - Transiente -Externo - - - - 1bit full adder verilog device - - - - - 1Bit FullAdder - - - - - 2bit full adder verilog device - - - - - 2Bit FullAdder - - - - - gated D latch verilog device - - - - - Gated D-Latch - - - - - 4bit Gray to binary converter verilog device - - - - - 4Bit Gray2Bin - - - - - ground (reference potential) - - - - - Ground - Massa - - - - gyrator (impedance inverter) - - - - - gyrator ratio - - - - - Gyrator - - - - - 1bit half adder verilog device - - - - - 1Bit HalfAdder - - - - - Harmonic balance simulation - Equilíbrio Harmónico - - - - number of harmonics - Número de harmónicas - - - - Harmonic balance - Equilíbrio Harmónico - - - - HBT model by Ferdinand-Braun-Institut (FBH), Berlin - - - - - - - - Ignored - - - - - Device operating temperature, Celsius - - - - - Thermal resistance, K/W - - - - - - - - - - - - - - Thermal capacitance - - - - - Scaling factor, number of emitter fingers - - - - - Length of emitter finger, m - - - - - Width of emitter finger, m - - - - - Forward saturation current density, A/um^2 - - - - - Forward current emission coefficient - - - - - Forward thermal activation energy, V, (0 == disables temperature dependence) - - - - - B-E leakage saturation current density, A/um^2 - - - - - B-E leakage emission coefficient - - - - - Limiting resistor of B-E leakage diode, Ohm - - - - - B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - 2nd B-E leakage saturation current density, A/um^2 - - - - - 2nd B-E leakage emission coefficient - - - - - 2nd Limiting resistor of B-E leakage diode, Ohm - - - - - 2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Reverse saturation current density, A/um^2 - - - - - Reverse current emission coefficient - - - - - Reverse thermal activation energy, V, (0 == disables temperature dependence) - - - - - Fraction of Cjc that goes to internal base node - - - - - B-C leakage saturation current density, A/um^2 (0. switches off diode) - - - - - B-C leakage emission coefficient (0. switches off diode) - - - - - Limiting resistor of B-C leakage diode, Ohm - - - - - B-C leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Ideal forward beta - - - - - Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence) - - - - - Ideal reverse beta - - - - - Forward Early voltage, V, (0 == disables Early Effect) - - - - - Reverse Early voltage, V, (0 == disables Early Effect) - - - - - Forward high-injection knee current, A, (0 == disables Webster Effect) - - - - - Reverse high-injection knee current, A, (0 == disables Webster Effect) - - - - - C-E breakdown exponent, (0 == disables collector break-down) - - - - - C-E breakdown voltage, V, (0 == disables collector break-down) - - - - - C-E breakdown factor, (0 == disables collector break-down) - - - - - B-E breakdown voltage, V, (0 == disables emitter break-down) - - - - - Ideal reverse transit time, s - - - - - Extrinsic BC diffusion capacitance, F - - - - - Ideal forward transit time, s - - - - - Temperature coefficient of forward transit time - - - - - Excess transit time coefficient at base push-out - - - - - Smoothing parameter for Thcs - - - - - B-E zero-bias depletion capacitance, F/um^2 - - - - - B-E junction exponential factor - - - - - B-E junction built-in potential, V - - - - - B-C zero-bias depletion capacitance, F/um^2 - - - - - B-C junction exponential factor - - - - - B-C junction built-in potential, V - - - - - not used - - - - - Minimum B-C depletion capacitance (Vbc dependence), F/um^2 - - - - - Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction) - - - - - Fraction of Cmin, lower limit of BC capacitance (Ic dependence) - - - - - Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out) - - - - - Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out) - - - - - Slope of Jk at high currents , Ohm*um^2 - - - - - Voltage shift of base push-out onset, V - - - - - Collector resistance, Ohm/finger - - - - - Emitter resistance, Ohm/finger - - - - - Extrinsic base resistance, Ohm/finger - - - - - Inner Base ohmic resistance, Ohm/finger - - - - - Collector inductance, H - - - - - Emitter inductance, H - - - - - Base inductance, H - - - - - Extrinsic B-C capacitance, F - - - - - Extrinsic base capacitance, F - - - - - Extrinsic collector capacitance, F - - - - - - Flicker-noise coefficient - - - - - - Flicker-noise exponent - - - - - - Flicker-noise frequency exponent - - - - - Burst noise coefficient - - - - - Burst noise exponent - - - - - Burst noise corner frequency, Hz - - - - - Ambient temperature at which the parameters were determined - - - - - FBH HBT - - - - - HICUM Level 0 v1.12 verilog device - - - - - - - - (Modified) saturation current - - - - - - - - Non-ideality coefficient of forward collector current - - - - - - - - Non-ideality coefficient of reverse collector current - - - - - - - - - - - - - - - - forward Early voltage (normalization volt.) - - - - - - - - forward d.c. high-injection roll-off current - - - - - - - - inverse d.c. high-injection roll-off current - - - - - - - - high-injection correction current - - - - - - - high-injection correction factor - - - - - - - - BE saturation current - - - - - - - - BE non-ideality factor - - - - - - - - BE recombination saturation current - - - - - - - - BE recombination non-ideality factor - - - - - - - - BC saturation current - - - - - - - - BC non-ideality factor - - - - - - - - Zero-bias BE depletion capacitance - - - - - - - - BE built-in voltage - - - - - - - - BE exponent factor - - - - - - - - Ratio of maximum to zero-bias value - - - - - - - - low current transit time at Vbici=0 - - - - - - - - Base width modulation contribution - - - - - - - - SCR width modulation contribution - - - - - - - - Storage time in neutral emitter - - - - - - - - Exponent factor for emitter transit time - - - - - - - - Saturation time at high current densities - - - - - - - - Smoothing factor for current dependence - - - - - - - - Storage time at inverse operation - - - - - - - - Low-field collector resistance under emitter - - - - - - - - Voltage dividing ohmic and satur.region - - - - - - - - - - - - Punch-through voltage - - - - - - - - Saturation voltage - - - - - - - - Total zero-bias BC depletion capacitance - - - - - - - - BC built-in voltage - - - - - - - - BC exponent factor - - - - - - - - Punch-through voltage of BC junction - - - - - - - - Zero-bias external BC depletion capacitance - - - - - - - - External BC built-in voltage - - - - - - - - External BC exponent factor + + + + voltage of high level + + + + + + + + + + + + + + - - - - Split factor = Cjci0/Cjc0 - - - - - - - - Internal base resistance at zero-bias - - - - - - - - Geometry factor - + + + + + + + + + + + + + + + + + + Error + Erro - - - - - - - - - - External base series resistance + + Format Error: +Wrong line start! - - - - - - - - - - Emitter series resistance + + Format Error: +Unknown component! +%1 + +Do you make use of loadable components? - - - - - - - - - - External collector series resistance + + Format Error: +Wrong 'component' line format! - - - - - - - - - - Substrate transistor transfer saturation current - + + coplanar line + Linha coplanar - - - - - Substrate transistor transfer current non-ideality factor - + + + + + + + + + + + + name of substrate definition + Nome da definição de substracto - - - - SC saturation current - - - - - - - - SC non-ideality factor - + + + + + + + + width of the line + Largura da pista - - - - Zero-bias SC depletion capacitance - - - - - - - - SC built-in voltage - - - - - - - - External SC exponent factor - + + + + width of a gap + Distância entre pistas - - - - SC punch-through voltage - + + + + length of the line + Comprimento da pista - - - - - Collector-base isolation (overlap) capacitance - + + + + + material at the backside of the substrate + Material do outro lado do substracto - - - - Emitter-base oxide capacitance - + use approximation instead of precise equation + Usar modelo aproximado - - - - - Exponent factor - + + Coplanar Line + Linha Coplanar - - - - - Prefactor - + + ideal coupler + Coupler ideal - - - - - M^(1-AF) - + + coupling factor + Factor de acoplamento - - - - flicker noise exponent factor - + phase shift of coupling path in degree + Atraso de fase ao longo do caminho acoplado, em graus - - - - - Bandgap-voltage - + + Coupler + Coupler - - - - - Effective emitter bandgap-voltage - + + coplanar gap + Separação coplanar - - - - - Effective collector bandgap-voltage - + + width of gap between the two lines + Largura da separação entre as duas linhas - - - - - Effective substrate bandgap-voltage - + + Coplanar Gap + Separação Coplanar - - - - - Coefficient K1 in T-dependent bandgap equation - + + coplanar open + Circuito Aberto Coplanar - - - - - Coefficient K2 in T-dependent bandgap equation - + + width of gap at end of line + Largura da separação no fim da linha - - - - - Frist-order TC of tf0 - + + Coplanar Open + Circuito Aberto Coplanar - - - - - Second-order TC of tf0 - + + coplanar short + Curto-Circuito Coplanar - - - - - - 1/K^2 - + + Coplanar Short + Curto-Circuito Coplanar - - - - - - - - - Exponent coefficient in transfer current temperature dependence - + + coplanar step + Degrau Coplanar - - - - - Exponent coefficient in BE junction current temperature dependence - + + + + width of line 1 + Largura da Linha 1 - - - - TC of epi-collector diffusivity - + + + width of line 2 + Largura da Linha 2 - - - - Relative TC of satur.drift velocity - + distance between ground planes + Distância entre planos de massa - - - - - Relative TC of vces - + + Coplanar Step + Degrau Coplanar - - - - - TC of internal base resistance - + + coupled transmission lines + Linhas Acopladas - - - - - TC of external base resistance - + + characteristic impedance of even mode + Impedância característica em modo comum (par) - - - - TC of external collector resistance - + characteristic impedance of odd mode + Impedância característica em modo diferencial (ímpar) - - - - TC of emitter resistances - + + + + electrical length of the line + comprimento eléctrico da linha - - - TC of avalanche prefactor - - - - - - - TC of avalanche exponential factor - + relative dielectric constant of even mode + constante dieléctrica relativa em modo comum (par) - - - - - Flag for self-heating calculation - + + relative dielectric constant of odd mode + constante dieléctrica relativa em modo diferencial (ímpar) - - - - - - - - - Thermal resistance - + attenuation factor per length of even mode + constante de atenuação por unidade de comprimento em modo comum - - - - - - - - - K/W - + + attenuation factor per length of odd mode + constante de atenuação por unidade de comprimento em modo diferencial - - - - - Ws/K - + + Coupled Transmission Line + Linha de Transmissão Acoplada - - - - - Temperature for which parameters are valid + + D flip flop with asynchron reset - - - - - - - - - C + + D-FlipFlop - - - - - Temperature change for particular transistor - + + + dc simulation + Simulação DC - - - - - - - - - K - + + + + + relative tolerance for convergence + Tolerância relativa para convergência - - npn HICUM L0 v1.12 - + + + + + absolute tolerance for currents + Tolerância absoluta para as correntes - - pnp HICUM L0 v1.12 - + + + + + absolute tolerance for voltages + Tolerância absoluta para as tensões - - HICUM Level 2 v2.22 verilog device - + + put operating points into dataset + Guardar ponto de polarização no dataset - - - - - GICCR constant - - - - - - - - A^2s - + + + + maximum number of iterations until error + Número máximo de iterações até dar erro - - - - - Zero-bias hole charge - + save subcircuit nodes into dataset + Guardar tensões dos nós dos subcircuitos no dataset - - - - - - - - - Coul - + + preferred convergence algorithm + Algoritmo favorito para convergir - - - - - - High-current correction for 2D and 3D effects - + + + + method for solving the circuit matrix + Método de resolução da matriz - - - - - - Emitter minority charge weighting factor in HBTs + + dc block - - - - - - Collector minority charge weighting factor in HBTs - + + dc Block + DC Block - - - - - - B-E depletion charge weighting factor in HBTs - + + dc feed + DC Feed - - - - - - B-C depletion charge weighting factor in HBTs - + + dc Feed + DC Feed - - - - - - Internal B-E saturation current + + D flip flop with set and reset verilog device - - - - - Internal B-E current ideality factor + + + + cross coupled gate transfer function high scaling factor - - - - - Internal B-E recombination saturation current - - - - - - - - - Internal B-E recombination current ideality factor + + + + cross coupled gate transfer function low scaling factor - - - - - Peripheral B-E saturation current + + + + cross coupled gate delay - - - - - - Peripheral B-E current ideality factor + + D-FlipFlop w/ SR - - - - - - Peripheral B-E recombination saturation current + + diac (bidirectional trigger diode) - - - - - - Peripheral B-E recombination current ideality factor + + + (bidirectional) breakover voltage - - - - - Non-ideality factor for III-V HBTs + (bidirectional) breakover current - - - - Base current recombination time constant at B-C barrier for high forward injection - - - - - - - - - Internal B-C saturation current + + + parasitic capacitance - - - - - - Internal B-C current ideality factor + + + + + + emission coefficient - - - - - External B-C saturation current + + + intrinsic junction resistance - - - - - - External B-C current ideality factor + + Diac - - - - - - B-E tunneling saturation current - + + + digital simulation + Simulação Digital - - - - - - Exponent factor for tunneling current + + type of simulation - - - - Specifies the base node connection for the tunneling current + duration of TimeList simulation - - - - - Avalanche current factor + netlist format - - - - - - Exponent factor for avalanche current + + + digital source - - - - - - Relative TC for FAVL + + + number of the port - - - - - - Relative TC for QAVL + + initial output value - - - - - - Zero bias internal base resistance + + list of times for changing output value - - - - - - Factor for geometry dependence of emitter current crowding - + + diode + Díodo - - - - - - Correction factor for modulation by B-E and B-C space charge layer + + + + zero-bias junction capacitance - - - - - Ratio of HF shunt to total internal capacitance (lateral NQS effect) + + + + + grading coefficient - - - - - Ration of internal to total minority charge + + + + junction potential - - - - - - Forward ideality factor of substrate transfer current + + linear capacitance - - - - - C-S diode saturation current + recombination current parameter - - - - - - Ideality factor of C-S diode current + + emission coefficient for Isr - - - - - Transit time for forward operation of substrate transistor + ohmic series resistance - - - - - - Substrate series resistance + + + + transit time - - - - - - Substrate shunt capacitance + + high-injection knee current (0=infinity) - - - - - - Internal B-E zero-bias depletion capacitance + + + + reverse breakdown voltage - - - - - - Internal B-E built-in potential + + + + current at reverse breakdown voltage - - - - - - Internal B-E grading coefficient + + Bv linear temperature coefficient - - - - - Ratio of maximum to zero-bias value of internal B-E capacitance + Rs linear temperature coefficient - - - - - Peripheral B-E zero-bias depletion capacitance + Tt linear temperature coefficient - - - - - - Peripheral B-E built-in potential + + Tt quadratic temperature coefficient - - - - - - Peripheral B-E grading coefficient + + M linear temperature coefficient - - - - - Ratio of maximum to zero-bias value of peripheral B-E capacitance + M quadratic temperature coefficient - - - - - - Internal B-C zero-bias depletion capacitance + + + default area for diode - - - - - - Internal B-C built-in potential + + Diode + Díodo + + + + data voltage level shifter (digital to analogue) verilog device - - - - - Internal B-C grading coefficient + + voltage level - - - - - Internal B-C punch-through voltage + + time delay - - - - - - External B-C zero-bias depletion capacitance + + D2A Level Shifter - - - - - - External B-C built-in potential + + data voltage level shifter (analogue to digital) verilog device + + + + + + + + + + + + + + + + + + + - - - - - External B-C grading coefficient + + + V - - - - - - External B-C punch-through voltage + + A2D Level Shifter - - - - - Partitioning factor of parasitic B-C cap + + 2to4 demultiplexer verilog device - - - - - Partitioning factor of parasitic B-E cap + + 2to4 Demux - - - - - - C-S zero-bias depletion capacitance + + 3to8 demultiplexer verilog device - - - - - - C-S built-in potential + + 3to8 Demux - - - - - - C-S grading coefficient + + 4to16 demultiplexer verilog device - - - - - - C-S punch-through voltage + + 4to16 Demux - - - - - - Low current forward transit time at VBC=0V + + externally controlled voltage source - - - - - - Time constant for base and B-C space charge layer width modulation + + + voltage in Volts - - - - - Time constant for modelling carrier jam at low VCE + + Externally Controlled Voltage Source - - - - - - Neutral emitter storage time + + EPFL-EKV MOS 2.6 verilog device - - - - - - Exponent factor for current dependence of neutral emitter storage time + + long = 1, short = 2 - - - - - Saturation time constant at high current densities + length parameter + + + + - - - - - Smoothing factor for current dependence of base and collector transit time + + + + + m - - - - - - Partitioning factor for base and collector portion + + Width parameter - - - - - - Internal collector resistance at low electric field + + parallel multiple device number - - - - - - Voltage separating ohmic and saturation velocity regime + + series multiple device number - - - - - - Internal C-E saturation voltage + + gate oxide capacitance per unit area - - - - - - Collector punch-through voltage + + F/m**2 - - - - - - Storage time for inverse operation + + metallurgical junction depth - - - - - Total parasitic B-E capacitance + channel width correction - - - - - Total parasitic B-C capacitance + channel length correction - - - - - Factor for additional delay time of minority charge + long channel threshold voltage - - - - - - Factor for additional delay time of transfer current + + body effect parameter - - - - - Flag for turning on and off of vertical NQS effect + + V**(1/2) - - - - - Flicker noise coefficient + bulk Fermi potential - - - - - - Flicker noise exponent factor + + + + transconductance parameter - - - - - Flag for determining where to tag the flicker noise source + + + A/V**2 - - - - - Scaling factor for collector minority charge in direction of emitter width + mobility reduction coefficient - - - - - - Scaling factor for collector minority charge in direction of emitter length + + + + + + 1/V - - - - - Bandgap voltage extrapolated to 0 K + mobility coefficient + - - - - - First order relative TC of parameter T0 + + V/m - - - - - - Second order relative TC of parameter T0 + + + longitudinal critical field - - - - - - Temperature exponent for RCI0 + + depletion length coefficient - - - - - Relative TC of saturation drift velocity + narrow-channel effect coefficient - - - - - - Relative TC of VCES + + reverse short channel charge density - - - - - - Temperature exponent of internal base resistance + + A*s/m**2 - - - - - Temperature exponent of external base resistance + characteristic length - - - - - - Temperature exponent of external collector resistance + + threshold voltage temperature coefficient - - - - - - Temperature exponent of emitter resistance + + V/K - - - - - Temperature exponent of mobility in substrate transistor transit time + mobility temperature coefficient - - - - Effective emitter bandgap voltage - - - - - - - - Effective collector bandgap voltage - - - - - - - - Effective substrate bandgap voltage - - - - - - - - Coefficient K1 in T-dependent band-gap equation + Longitudinal critical field temperature exponent - - - - Coefficient K2 in T-dependent band-gap equation + Ibb temperature coefficient - - - - - Exponent coefficient in B-E junction current temperature dependence + + 1/K - - - - - Relative TC of forward current gain for V2.1 model + heavily doped diffusion length - - - - Flag for turning on and off self-heating effect - - - - - - - - J/W + drain/source diffusion sheet resistance - - - - - Flag for compatibility with v2.1 model (0=v2.1) + + Ohm/square - - - - - Temperature at which parameters are specified + source contact resistance + + + + + + + + + - - - - - Temperature change w.r.t. chip temperature for particular transistor + + + Ohm - - HICUM L2 v2.22 + + drain contact resistance - - HICUM Level 0 v1.2 verilog device + + gate to source overlap capacitance - - - - reverse Early voltage (normalization volt.) + + + + + F/m - - - - flag for turning on base related critical current + + gate to drain overlap capacitance - - - - Smoothing factor for the d.c. injection width + + gate to bulk overlap capacitance - - - - BE charge built-in voltage for d.c. transfer current + + first impact ionization coefficient - - - - charge BE exponent factor for d.c. transfer current + + 1/m - - - BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current + second impact ionization coefficient - - - TC of iqf + + saturation voltage factor for impact ionization - - - - Exponent factor for temperature dependent thermal resistance + + area related theshold voltage mismatch parameter - - npn HICUM L0 v1.2 + + V*m - - pnp HICUM L0 v1.2 + + area related gain mismatch parameter - - HICUM Level 0 v1.2g verilog device + + area related body effect mismatch parameter - - high-injection roll-off current + + sqrt(V)*m - - TC of iqf (bandgap coefficient of zero bias hole charge) + + + + + + + + + + + A - - TC of avalanche prefactor, identical to alfav of Hicum/L2 + + + + + + + + F - - TC of avalanche exponential factor, identical to alqav of Hicum/L2 + + + diode relative area - - Emitter part coefficient of the zero bias hole charge temperature variation + + charge partition parameter - Collector part coefficient of the zero bias hole charge temperature variation + + + + + + + parameter measurement temperature - - Bandgap TC parameter of ver + + + + + + + + Celsius - - Bandgap TC parameter of vef + + EPFL-EKV NMOS 2.6 - - Specific recombination current at the BC barrier for high forward injection + + EPFL-EKV PMOS 2.6 - - npn HICUM L0 v1.2g - + + equation defined device + Dispositivo Definido por Equações - - pnp HICUM L0 v1.2g - + + type of equations + Tipo de equações - - HICUM Level 0 v1.3 verilog device - + + number of branches + Número de portos - - Flag for using third order solution for transfer current - + + + current equation + Equação de corrente - - bias dependence for reverse Early voltage - + + + charge equation + Equação de carga - - Flag for turning temperature dependence of tef0 on and off - + + Equation Defined Device + Dispositivo Definido por Equações - - TC of Reverse Early voltage - + + equation + Equação - - TC of AVER - + + + + Equation + Equação - - Bandgap difference between base and BE-junction - + + put result into dataset + Guardar resultado no dataset - - Frist-order TC of iqfh - + + externally driven transient simulation + Transiente externo - - Second-order TC of iqfh - + + + integration method + Método de integração - - npn HICUM L0 v1.3 - + + + order of integration method + Ordem do método de integração - - pnp HICUM L0 v1.3 - + + + initial step size in seconds + Passo inicial em segundos - - HICUM Level 2 v2.1 verilog device - + + + minimum step size in seconds + Passo mínimo em segundos - - Partitioning factor of parasitic B-C capacitance - + + + relative tolerance of local truncation error + Tolerância relativa do erro de truncatura local - - Noise factor for internal base resistance - + + + absolute tolerance of local truncation error + Tolerância absoluta do erro de truncatura local - - HICUM L2 v2.1 + + + overestimation of local truncation error - - HICUM Level 2 v2.23 verilog device + + + relax time step raster - - HICUM L2 v2.23 + + + perform an initial DC analysis - - HICUM Level 2 v2.24 verilog device + + + maximum step size in seconds - - HICUM L2 v2.24 - + + External transient simulation + Transiente +Externo - - hicumL2V2p31n verilog device + + 1bit full adder verilog device - - Weight factor for the low current minority charge + + 1Bit FullAdder - - Parameter describing the slope of hjEi(VBE) + + 2bit full adder verilog device - - Smoothing parameter for hjEi(VBE) at high voltage + + 2Bit FullAdder - - Time constant for modeling carrier jam at low VCE + + gated D latch verilog device - - Barrier voltage + + Gated D-Latch - - Normalization parameter + + 4bit Gray to binary converter verilog device - - Smoothing parameter for barrier voltage + + 4Bit Gray2Bin - - fitting factor for critical current + + ground (reference potential) - - Flag for turning on and off of correlated noise implementation - + + Ground + Massa - - Emitter resistance flicker noise coefficient + + gyrator (impedance inverter) - - Emitter resistance flicker noise exponent factor + + gyrator ratio - - Bandgap difference between B and B-E junction used for hjEi0 and hf0 + + Gyrator - - Temperature coefficient for ahjEi + + 1bit half adder verilog device - - Temperature coefficient for hjEi0 + + 1Bit HalfAdder - - Temperature coefficient for Rth - + + Harmonic balance simulation + Equilíbrio Harmónico - - First order relative TC of parameter Rth - + + number of harmonics + Número de harmónicas - - HICUM L2 V2.31 - + + Harmonic balance + Equilíbrio Harmónico @@ -12092,7 +7787,7 @@ Externo - + ERROR: No file name in SPICE component "%1". @@ -12515,11 +8210,15 @@ Externo Fonte de Corrente Controlada por Tensão - voltage controlled voltage source Fonte de Tensão Controlada por Tensão + + + voltage controlled resistor + + resistance gain @@ -12554,7 +8253,7 @@ Externo - + ERROR: No file name in %1 component "%2". @@ -12717,7 +8416,7 @@ Externo - + invalid inválido @@ -12826,7 +8525,7 @@ Externo - + Successfully exported @@ -12849,8 +8548,8 @@ Use PNG, JPEG or SVG graphics! - - + + verilog-a user devices @@ -12909,14 +8608,14 @@ Use PNG, JPEG or SVG graphics! - + diagrams Diagramas - + paintings Desenho @@ -13036,16 +8735,16 @@ Defina a localização do Octave nas Definições do Programa. - + - + untitled SemNome - + Format Error: 'Painting' field is not closed! @@ -13219,17 +8918,17 @@ Campo desconhecido! ERRO: Impossível abrir sub-circuito "%1". - + WARNING: Skipping library component "%1". AVISO: Saltando o componente da biblioteca: "%1". - - ERROR: Cannot load library component "%1". - ERRO: Impossível carregar componente da biblioteca: "%1". + + ERROR: "%1": Cannot load library component "%2" from "%3" + - + WARNING: Ignore simulation component in subcircuit "%1". AVISO: Ignorando componente de simulação no sub-circuito "%1". @@ -13239,7 +8938,7 @@ Campo desconhecido! AVISO: Equações em %1" são do tipo 'time'. - + ERROR: Only one digital simulation allowed. ERRO: Apenas é permitida uma simulação digital. @@ -13355,11 +9054,17 @@ a substrate with lower permittivity and larger height. Cannot save settings file ! + + + Quarter wave filters do not allow low-pass nor high-pass masks + + + QucsActiveFilter - + &File &Ficheiro @@ -13369,7 +9074,29 @@ a substrate with lower permittivity and larger height. Saír - + + &View + &Ver + + + + &Console + + + + + Enables/disables the filter calculation console + + + + + Console + +Enables/disables the filter calculation console + + + + &Help &Ajuda @@ -13389,30 +9116,30 @@ a substrate with lower permittivity and larger height. Acerca do Qt... - - + + Passband attenuation, Ap (dB) - + Stopband attenuation, As (dB) - - Cuttof frequency, Fc (Hz) + + Cutoff frequency, Fc (Hz) - - + + Stopband frequency, Fs (Hz) - + Passband ripple Rp(dB) @@ -13422,7 +9149,7 @@ a substrate with lower permittivity and larger height. - + Filter order @@ -13472,27 +9199,61 @@ a substrate with lower permittivity and larger height. - - Calculation console + + Low Pass - - Filter topology + + General filter amplitude-frequency response - - Filter type: + + + + Unable to implement filter with such parameters and topology +Change parameters and/or topology and try again! + + + + + + Filter calculation was successful - LowPass + Filter calculation terminated with error! + + + + + Filter calculation terminated with error + + + + + Lower cutoff frequency, Fl (Hz) + + + + + Copyright (C) 2014, 2015 by + + + + + Filter topology + Filter type: + + + + High Pass @@ -13518,62 +9279,45 @@ a substrate with lower permittivity and larger height. - + Cauer section - - General amplitude frequency response - - - - - Filter topology preview (one stage) - - - - + Filter parameters - + Transfer function and Topology - - General filter amplidure-frequency response + + Filter topology preview - - Filter topology preview + + Filter calculation console - - Filter calculation console + + + Ready. - + Upper cutoff frequency of band-pass/band-stop filter is less than lower. Unable to implement such filter. Change parameters and try again. - - - - Unable to implement filter with such parameters and topology -Change parapeters and/or topology and try again! - - - - + Unable to use Cauer section for Chebyshev or Butterworth frequency response. Try to use another topology. @@ -13589,40 +9333,28 @@ frequency response. Try to use another topology. Function will be implemented in future version - - - -Filter calculation was sucessfull - - - - - -Filter calculation terminated with error - - Upper cutoff frequency, Fu (Hz) - - Lower cuttoff frequency, Fl (Hz) + + Transient bandwidth, TW (Hz) - - Transient bandwidth, TW (Hz) + + Error! - + Active filter design - + About... Acerca... @@ -13634,12 +9366,7 @@ Active Filter synthesis program - - Copyright (C) 2014 by - - - - + About Qt Acerca do Qt @@ -13647,7 +9374,7 @@ Active Filter synthesis program QucsApp - + Schematic Esquemático @@ -13663,42 +9390,42 @@ Active Filter synthesis program - + VHDL Sources Fontes VHDL - - + + Verilog Sources Fontes Verilog - - + + Verilog-A Sources Fontes Verilog-A - - + + Octave Scripts Scripts de Octave - + Spice Files Ficheiros SPICE - + Any File Qualquer ficheiro - + The schematic search path has been refreshed. @@ -13718,7 +9445,7 @@ Active Filter synthesis program Esquemáticos - + New Novo @@ -13803,13 +9530,13 @@ Active Filter synthesis program - + - + @@ -13832,7 +9559,7 @@ Active Filter synthesis program Erro - + Cannot open "%1". Impossível abrir "%1". @@ -13844,8 +9571,16 @@ Active Filter synthesis program A biblioteca está corrompida. - - + + + + + Search results + + + + + @@ -13864,14 +9599,19 @@ Active Filter synthesis program Info - + Default icon not found: %1.png Impossível encontrar icon por defeito: %1.png - + + verilog-a user devices + + + + -port -portos @@ -13882,13 +9622,13 @@ Active Filter synthesis program - + The document contains unsaved changes! O documento contém alterações por guardar! - + Do you want to save the changes before copying? Deseja guardar as alterações antes de copiar? @@ -13899,13 +9639,13 @@ Active Filter synthesis program - + &Save &Guardar - + Copy file Copiar ficheiro @@ -13939,31 +9679,31 @@ Active Filter synthesis program - + Warning Aviso - + This will delete the file permanently! Continue ? O ficheiro será apagado de forma irreversível! Continuar? - + No não - + - + Yes Sim - + unknown Desconhecido @@ -14124,7 +9864,7 @@ Active Filter synthesis program - + @@ -14138,7 +9878,7 @@ Active Filter synthesis program Pronto. - + Creating new text editor... A criar novo editor de texto... @@ -14202,12 +9942,12 @@ Active Filter synthesis program - + Cancel Cancelar - + Cannot overwrite an open document Impossível substituir um ficheiro aberto @@ -14222,7 +9962,7 @@ Active Filter synthesis program Guardando todos os ficheiros... - + Closing file... Fechando ficheiro... @@ -14246,10 +9986,6 @@ Active Filter synthesis program Open examples directory... Abrir directório de exemplos... - - OK - Ok - Printing... @@ -15054,10 +10790,6 @@ Searches for a piece of text Procura por texto - - Export as image - Exportar como imagem - Export as image... @@ -16214,14 +11946,6 @@ Acerca do Qt, da Trolltech Warnings in last simulation! Press F5 Houve avisos na última simulação! Pressione F5 - - About... - Acerca... - - - Qucs Version - Versão do Qucs - QucsAttenuator @@ -16486,7 +12210,7 @@ Very simple text editor for Qucs QucsFilter - + &File &Ficheiro @@ -16526,7 +12250,7 @@ Very simple text editor for Qucs - + Filter type: @@ -16562,29 +12286,29 @@ Very simple text editor for Qucs - + Corner frequency: - + Stop frequency: - + Stop band frequency: - - + + Pass band ripple: - + Stop band attenuation: @@ -16652,19 +12376,19 @@ Filter synthesis program - + Result: - + Error Erro - + Stop frequency must be greater than start frequency. @@ -16819,17 +12543,22 @@ Enables/disables the table of contents - + Component Selection - - Search... + + Search Lib Components - + + Clear + + + + Component @@ -16844,13 +12573,19 @@ Enables/disables the table of contents - + About... Acerca... Library Manager for Qucs + + + + + + Copyright (C) 2011-2015 Qucs Team @@ -16861,7 +12596,7 @@ Enables/disables the table of contents - + QucsLib Help @@ -16881,14 +12616,17 @@ Enables/disables the table of contents - - Search result + + + + + Search results - + - + @@ -16897,13 +12635,13 @@ Enables/disables the table of contents Erro - + Cannot open "%1". Impossível abrir "%1". - + @@ -16911,21 +12649,6 @@ Enables/disables the table of contents Library is corrupt. A biblioteca está corrompida. - - - Search Library Component - - - - - Result - - - - - No appropriate component found. - - QucsSettingsDialog @@ -17939,7 +13662,7 @@ Permite editar o símbolo para este esquemático genérico - + Error Erro @@ -17959,7 +13682,7 @@ Defina a localização do admsXml nas definições da aplicação. Estado - + ERROR: Cannot create library file "%s". ERRO: Impossível criar ficheiro de biblioteca "%s". @@ -17968,83 +13691,46 @@ Defina a localização do admsXml nas definições da aplicação. SearchDialog - - - - Dialog - - - - Text to search for Texto a ser procurado - - - - Text to replace with Substituir por - - - - Ask before replacing Confirmar antes de substituir - - - - Case sensitive Sensível a Maiúsculas/Minúsculas - - - - Whole words only Apenas palavras completas - - - - Search backwards Procurar para trás - - - - Next - - - - - Close Fechar @@ -18058,29 +13744,6 @@ Defina a localização do admsXml nas definições da aplicação. Search Text Procurar Texto - - - The search result contains all components whose -name contains the search string. All libraries -are included in the search. - - - - - Search string: - - - - - Search - Procurar - - - - - Search result - - SettingsDialog @@ -18362,12 +14025,6 @@ are included in the search. Simulation aborted by the user! - - Errors: -------- - Erros: -------- - SpiceDialog @@ -18530,7 +14187,7 @@ are included in the search. SymbolWidget - + Symbol: @@ -18539,6 +14196,13 @@ are included in the search. ! Drag n'Drop me ! + + + Warning: Symbol '%1' missing in Qucs Library. +Drag and Drop may still work. +Please contact the developers. + + TextDoc diff --git a/qucs/translations/qucs_ro.ts b/qucs/translations/qucs_ro.ts index a92f3c1ee2..826e3efb45 100644 --- a/qucs/translations/qucs_ro.ts +++ b/qucs/translations/qucs_ro.ts @@ -3525,62 +3525,6 @@ Resistor color code computation program - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - @@ -3736,10 +3680,6 @@ Resistor color code computation program - - - - polarity @@ -3944,10 +3884,6 @@ Resistor color code computation program - - - - @@ -4088,5709 +4024,1480 @@ Resistor color code computation program - - bsim3v34nMOS verilog device + + + + + + + + + + + simulation temperature + + + capacitor + capacitate + + capacitance in Farad + capacitate în Farad + + + initial voltage for transient simulation + + + + + + + + + schematic symbol + simbol schematic + + + + Capacitor + Capacitor + + + + current controlled current source + sursa de curent controlată în curent + + + + + + forward transfer factor + factor de transfer spre înainte + + + + + + + + + + + + + + + delay time + timp de întîrziere + + + + Current Controlled Current Source + Sursa de Curent Controlată în Curent + + + + current controlled voltage source + sursa de tensiune controlată în curent + + + + Current Controlled Voltage Source + Sursa de Tensiune Controlată în Curent + + + + circulator + circulator + + + + reference impedance of port 1 + impedanţa de referinţă la portul 1 + + + reference impedance of port 2 + impedanţa de referinţă la portul 2 + + + reference impedance of port 3 + impedanţa de referinţă la portul 3 + + + + Circulator + Circulator + + + + coaxial transmission line + + + + + + relative permittivity of dielectric + + + + + + specific resistance of conductor + + + + + + relative permeability of conductor + + + + inner diameter of shield + + + + diameter of inner conductor + + + + + mechanical length of the line + + + + + + + loss tangent + tangenta de pierderi + + + + Coaxial Line + + + + + 1bit comparator verilog device + + + + + 1Bit Comparator + + + + + 2bit comparator verilog device + + + + + 2Bit Comparator + + + + + 4bit comparator verilog device + + + + + 4Bit Comparator + + + + + number of input ports + + + - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - simulation temperature - - - - - bsim3v34nMOS - - - - - bsim3v34pMOS verilog device - - - - - bsim3v34pMOS - - - - - bsim4v30nMOS verilog device - - - - - bsim4v30nMOS - - - - - bsim4v30pMOS verilog device - - - - - bsim4v30pMOS - - - - - capacitor - capacitate - - - - capacitance in Farad - capacitate în Farad - - - - initial voltage for transient simulation - - - - - - - - - - schematic symbol - simbol schematic - - - - Capacitor - Capacitor - - - - current controlled current source - sursa de curent controlată în curent - - - - - - forward transfer factor - factor de transfer spre înainte - - - - - - - - - - - - - - - delay time - timp de întîrziere - - - - Current Controlled Current Source - Sursa de Curent Controlată în Curent - - - - current controlled voltage source - sursa de tensiune controlată în curent - - - - Current Controlled Voltage Source - Sursa de Tensiune Controlată în Curent - - - - circulator - circulator - - - - reference impedance of port 1 - impedanţa de referinţă la portul 1 - - - - reference impedance of port 2 - impedanţa de referinţă la portul 2 - - - - reference impedance of port 3 - impedanţa de referinţă la portul 3 - - - - Circulator - Circulator - - - - coaxial transmission line - - - - - - relative permittivity of dielectric - - - - - - - specific resistance of conductor - - - - - - - relative permeability of conductor - - - - - inner diameter of shield - - - - - diameter of inner conductor - - - - - - mechanical length of the line - - - - - - - - loss tangent - tangenta de pierderi - - - - Coaxial Line - - - - - 1bit comparator verilog device - - - - - 1Bit Comparator - - - - - 2bit comparator verilog device - - - - - 2Bit Comparator - - - - - 4bit comparator verilog device - - - - - 4Bit Comparator - - - - - number of input ports - - - - - - - - voltage of high level - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Error - Eroare - - - - Format Error: -Wrong line start! - Eroare de format: -Linie de start greşită! - - - - Format Error: -Unknown component! -%1 - -Do you make use of loadable components? - - - - - Format Error: -Wrong 'component' line format! - Eroare de format: -Fals format de linie a 'component'! - - - - coplanar line - linie coplanară - - - - - - - - - - - - - - name of substrate definition - numele definiţiei de substrat - - - - - - - - - - - width of the line - grosimea liniei - - - - - - - width of a gap - latimea golului - - - - - - - length of the line - lungimea liniei - - - - - - - material at the backside of the substrate - - - - - use approximation instead of precise equation - - - - - Coplanar Line - Linie coplanară - - - - ideal coupler - - - - - coupling factor - - - - - phase shift of coupling path in degree - - - - - Coupler - - - - - coplanar gap - - - - - width of gap between the two lines - - - - - Coplanar Gap - - - - - coplanar open - - - - - width of gap at end of line - - - - - Coplanar Open - - - - - coplanar short - - - - - Coplanar Short - - - - - coplanar step - - - - - - - width of line 1 - grosimea liniei 1 - - - - - - width of line 2 - grosimea liniei 2 - - - - distance between ground planes - - - - - Coplanar Step - - - - - coupled transmission lines - - - - - characteristic impedance of even mode - - - - - characteristic impedance of odd mode - - - - - - - - electrical length of the line - lungimea electrică a liniei - - - - relative dielectric constant of even mode - - - - - relative dielectric constant of odd mode - - - - - attenuation factor per length of even mode - - - - - attenuation factor per length of odd mode - - - - - Coupled Transmission Line - - - - - D flip flop with asynchron reset - - - - - D-FlipFlop - - - - - - dc simulation - simulare dc - - - - - - - relative tolerance for convergence - toleranţa relativă de convergenţa - - - - - - - absolute tolerance for currents - toleranţa absolută pentru curenţi - - - - - - - absolute tolerance for voltages - toleranţa absolută pentru tensiuni - - - - put operating points into dataset - pune punctele de operare într-un set de date - - - - - - - maximum number of iterations until error - numărul maxim de iteraţii pâna la eroare - - - - save subcircuit nodes into dataset - salvează nodurile subcircuitului intr-un dataset - - - - preferred convergence algorithm - - - - - - - method for solving the circuit matrix - - - - - dc block - bloc dc - - - - dc Block - Bloc DC - - - - dc feed - alimentare dc - - - - dc Feed - Alimentare dc - - - - D flip flop with set and reset verilog device - - - - - - - - cross coupled gate transfer function high scaling factor - - - - - - - - cross coupled gate transfer function low scaling factor - - - - - - - - cross coupled gate delay - - - - - D-FlipFlop w/ SR - - - - - diac (bidirectional trigger diode) - - - - - - (bidirectional) breakover voltage - - - - - (bidirectional) breakover current - - - - - - - parasitic capacitance - - - - - - - - - emission coefficient - coeficient de emisie - - - - - - intrinsic junction resistance - - - - - Diac - - - - - - digital simulation - - - - - type of simulation - - - - - duration of TimeList simulation - - - - - netlist format - - - - - - digital source - - - - - - number of the port - numărul portului - - - - initial output value - - - - - list of times for changing output value - - - - - diode - diodă - - - - - - zero-bias junction capacitance - capacitate de jonctiune zero-bias - - - - - - - - grading coefficient - coeficient de gradare - - - - - - - junction potential - potenţial de joncţiune - - - - linear capacitance - capacitatea liniară - - - - recombination current parameter - parametrul curentului de recombinare - - - - emission coefficient for Isr - coeficientul de emisie pentru Isr - - - - ohmic series resistance - Rezistenţa ohmica serială - - - - - - transit time - timpul de tranziţie - - - - high-injection knee current (0=infinity) - - - - - - - reverse breakdown voltage - - - - - - - current at reverse breakdown voltage - - - - - Bv linear temperature coefficient - - - - - Rs linear temperature coefficient - - - - - Tt linear temperature coefficient - - - - - Tt quadratic temperature coefficient - - - - - M linear temperature coefficient - - - - - M quadratic temperature coefficient - - - - - - default area for diode - - - - - Diode - Diodă - - - - data voltage level shifter (digital to analogue) verilog device - - - - - - voltage level - - - - - - time delay - - - - - D2A Level Shifter - - - - - data voltage level shifter (analogue to digital) verilog device - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - V - - - - - A2D Level Shifter - - - - - 2to4 demultiplexer verilog device - - - - - 2to4 Demux - - - - - 3to8 demultiplexer verilog device - - - - - 3to8 Demux - - - - - 4to16 demultiplexer verilog device - - - - - 4to16 Demux - - - - - externally controlled voltage source - - - - - - voltage in Volts - tensiune în Volţi - - - - Externally Controlled Voltage Source - - - - - EPFL-EKV MOS 2.6 verilog device - - - - - long = 1, short = 2 - - - - - length parameter - - - - - - - - - - - - - m - - - - - Width parameter - - - - - parallel multiple device number - - - - - series multiple device number - - - - - gate oxide capacitance per unit area - - - - - F/m**2 - - - - - metallurgical junction depth - - - - - channel width correction - - - - - channel length correction - - - - - long channel threshold voltage - - - - - body effect parameter - - - - - V**(1/2) - - - - - bulk Fermi potential - - - - - - - transconductance parameter - parametrul de transconductanţă - - - - - A/V**2 - - - - - mobility reduction coefficient - - - - - - - - - - - - - 1/V - - - - - mobility coefficient - - - - - - - V/m - - - - - - longitudinal critical field - - - - - depletion length coefficient - - - - - narrow-channel effect coefficient - - - - - reverse short channel charge density - - - - - A*s/m**2 - - - - - characteristic length - - - - - threshold voltage temperature coefficient - - - - - - - - - - - - - V/K - - - - - mobility temperature coefficient - - - - - Longitudinal critical field temperature exponent - - - - - Ibb temperature coefficient - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1/K - - - - - heavily doped diffusion length - - - - - drain/source diffusion sheet resistance - - - - - Ohm/square - - - - - source contact resistance - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Ohm - - - - - drain contact resistance - - - - - gate to source overlap capacitance - - - - - - - - F/m - - - - - gate to drain overlap capacitance - - - - - gate to bulk overlap capacitance - - - - - first impact ionization coefficient - - - - - 1/m - - - - - second impact ionization coefficient - - - - - saturation voltage factor for impact ionization - - - - - area related theshold voltage mismatch parameter - - - - - V*m - - - - - area related gain mismatch parameter - - - - - area related body effect mismatch parameter - - - - - sqrt(V)*m - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - F - - - - - - diode relative area - - - - - charge partition parameter - - - - - - - - - - - parameter measurement temperature - - - - - - - - - - - Celsius - - - - - EPFL-EKV NMOS 2.6 - - - - - EPFL-EKV PMOS 2.6 - - - - - equation defined device - - - - - type of equations - - - - - number of branches - - - - - - current equation - - - - - - charge equation - - - - - Equation Defined Device - - - - - equation - ecuaţie - - - - - - Equation - Ecuaţie - - - - put result into dataset - pune rezultatul într-un set de date - - - - externally driven transient simulation - - - - - - integration method - metoda de integrare - - - - - order of integration method - ordinul metodei de integrare - - - - - initial step size in seconds - mărimea pasului iniţial în secunde - - - - - minimum step size in seconds - mărimea pasului minim în secunde - - - - - relative tolerance of local truncation error - toleranţa relativă a erorii de truncare locală - - - - - absolute tolerance of local truncation error - toleranţa absolută a erorii locale de truncare - - - - - overestimation of local truncation error - supraestimare a erorii de truncare locală - - - - - relax time step raster - - - - - - perform an initial DC analysis - - - - - - maximum step size in seconds - - - - - External transient simulation - - - - - 1bit full adder verilog device - - - - - 1Bit FullAdder - - - - - 2bit full adder verilog device - - - - - 2Bit FullAdder - - - - - gated D latch verilog device - - - - - Gated D-Latch - - - - - 4bit Gray to binary converter verilog device - - - - - 4Bit Gray2Bin - - - - - ground (reference potential) - masă (potenţial de referinţă) - - - - Ground - Masă - - - - gyrator (impedance inverter) - girator (invertor de impedanţă) - - - - gyrator ratio - ratia giratorului - - - - Gyrator - Girator - - - - 1bit half adder verilog device - - - - - 1Bit HalfAdder - - - - - Harmonic balance simulation - Simulare Harmonic Balance - - - - number of harmonics - numărul de armonici - - - - Harmonic balance - Harmonic balance - - - - HBT model by Ferdinand-Braun-Institut (FBH), Berlin - - - - - - - - Ignored - - - - - Device operating temperature, Celsius - - - - - Thermal resistance, K/W - - - - - - - - - - - - - - Thermal capacitance - - - - - Scaling factor, number of emitter fingers - - - - - Length of emitter finger, m - - - - - Width of emitter finger, m - - - - - Forward saturation current density, A/um^2 - - - - - Forward current emission coefficient - - - - - Forward thermal activation energy, V, (0 == disables temperature dependence) - - - - - B-E leakage saturation current density, A/um^2 - - - - - B-E leakage emission coefficient - - - - - Limiting resistor of B-E leakage diode, Ohm - - - - - B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - 2nd B-E leakage saturation current density, A/um^2 - - - - - 2nd B-E leakage emission coefficient - - - - - 2nd Limiting resistor of B-E leakage diode, Ohm - - - - - 2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Reverse saturation current density, A/um^2 - - - - - Reverse current emission coefficient - - - - - Reverse thermal activation energy, V, (0 == disables temperature dependence) - - - - - Fraction of Cjc that goes to internal base node - - - - - B-C leakage saturation current density, A/um^2 (0. switches off diode) - - - - - B-C leakage emission coefficient (0. switches off diode) - - - - - Limiting resistor of B-C leakage diode, Ohm - - - - - B-C leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Ideal forward beta - - - - - Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence) - - - - - Ideal reverse beta - - - - - Forward Early voltage, V, (0 == disables Early Effect) - - - - - Reverse Early voltage, V, (0 == disables Early Effect) - - - - - Forward high-injection knee current, A, (0 == disables Webster Effect) - - - - - Reverse high-injection knee current, A, (0 == disables Webster Effect) - - - - - C-E breakdown exponent, (0 == disables collector break-down) - - - - - C-E breakdown voltage, V, (0 == disables collector break-down) - - - - - C-E breakdown factor, (0 == disables collector break-down) - - - - - B-E breakdown voltage, V, (0 == disables emitter break-down) - - - - - Ideal reverse transit time, s - - - - - Extrinsic BC diffusion capacitance, F - - - - - Ideal forward transit time, s - - - - - Temperature coefficient of forward transit time - - - - - Excess transit time coefficient at base push-out - - - - - Smoothing parameter for Thcs - - - - - B-E zero-bias depletion capacitance, F/um^2 - - - - - B-E junction exponential factor - - - - - B-E junction built-in potential, V - - - - - B-C zero-bias depletion capacitance, F/um^2 - - - - - B-C junction exponential factor - - - - - B-C junction built-in potential, V - - - - - not used - - - - - Minimum B-C depletion capacitance (Vbc dependence), F/um^2 - - - - - Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction) - - - - - Fraction of Cmin, lower limit of BC capacitance (Ic dependence) - - - - - Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out) - - - - - Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out) - - - - - Slope of Jk at high currents , Ohm*um^2 - - - - - Voltage shift of base push-out onset, V - - - - - Collector resistance, Ohm/finger - - - - - Emitter resistance, Ohm/finger - - - - - Extrinsic base resistance, Ohm/finger - - - - - Inner Base ohmic resistance, Ohm/finger - - - - - Collector inductance, H - - - - - Emitter inductance, H - - - - - Base inductance, H - - - - - Extrinsic B-C capacitance, F - - - - - Extrinsic base capacitance, F - - - - - Extrinsic collector capacitance, F - - - - - - Flicker-noise coefficient - - - - - - Flicker-noise exponent - - - - - - Flicker-noise frequency exponent - - - - - Burst noise coefficient - - - - - Burst noise exponent - - - - - Burst noise corner frequency, Hz + + + + voltage of high level + + - Ambient temperature at which the parameters were determined - - - - - FBH HBT - - - - - HICUM Level 0 v1.12 verilog device - - - + + + + + + + + + + + - - - - (Modified) saturation current - - - - - - - - Non-ideality coefficient of forward collector current - - - - - - - - Non-ideality coefficient of reverse collector current - - - - - - - - - - - - - - - - forward Early voltage (normalization volt.) - - - - - - - - forward d.c. high-injection roll-off current - - - - - - - - inverse d.c. high-injection roll-off current - - - - - - - - high-injection correction current - - - - - - - high-injection correction factor - - - - - - - - BE saturation current - - - - - - - - BE non-ideality factor - - - - - - - - BE recombination saturation current - - - - - - - - BE recombination non-ideality factor - - - - - - - - BC saturation current - - - - - - - - BC non-ideality factor - - - - - - - - Zero-bias BE depletion capacitance - - - - - - - - BE built-in voltage - - - - - - - - BE exponent factor - - - - - - - - Ratio of maximum to zero-bias value - - - - - - - - low current transit time at Vbici=0 - - - - - - - - Base width modulation contribution - - - - - - - - SCR width modulation contribution - - - - - - - - Storage time in neutral emitter - - - - - - - - Exponent factor for emitter transit time - - - - - - - - Saturation time at high current densities - - - - - - - - Smoothing factor for current dependence - - - - - - - - Storage time at inverse operation - - - - - - - - Low-field collector resistance under emitter - - - - - - - - Voltage dividing ohmic and satur.region - - - - - - - - - - - - Punch-through voltage - - - - - - - - Saturation voltage - - - - - - - - Total zero-bias BC depletion capacitance - - - - - - - - BC built-in voltage - - - - - - - - BC exponent factor - - - - - - - - Punch-through voltage of BC junction - - - - - - - - Zero-bias external BC depletion capacitance - - - - - - - - External BC built-in voltage - - - - - - - - External BC exponent factor - - - + - - - - Split factor = Cjci0/Cjc0 - - - - - - - - Internal base resistance at zero-bias - - - - - - - - Geometry factor - - - - - - - - - - - - - External base series resistance - - - - - - - - - - - - - Emitter series resistance - + + + + + + + + + + + + + + + + Error + Eroare - - - - - - - - - - External collector series resistance - + + Format Error: +Wrong line start! + Eroare de format: +Linie de start greşită! - - - - - - - - - - Substrate transistor transfer saturation current + + Format Error: +Unknown component! +%1 + +Do you make use of loadable components? - - - - - Substrate transistor transfer current non-ideality factor - + + Format Error: +Wrong 'component' line format! + Eroare de format: +Fals format de linie a 'component'! - - - - - SC saturation current - + + coplanar line + linie coplanară - - - - - SC non-ideality factor - + + + + + + + + + + + + name of substrate definition + numele definiţiei de substrat - - - - Zero-bias SC depletion capacitance - + + + + + + + + width of the line + grosimea liniei - - - - - SC built-in voltage - + + + + + width of a gap + latimea golului - - - - - External SC exponent factor - + + + + + length of the line + lungimea liniei - - - - SC punch-through voltage + + + + material at the backside of the substrate - - - - Collector-base isolation (overlap) capacitance + use approximation instead of precise equation - - - - - Emitter-base oxide capacitance - + + Coplanar Line + Linie coplanară - - - - - Exponent factor + + ideal coupler - - - - - Prefactor + + coupling factor - - - - - M^(1-AF) + + phase shift of coupling path in degree - - - - - flicker noise exponent factor + + Coupler - - - - - Bandgap-voltage + + coplanar gap - - - - - Effective emitter bandgap-voltage + + width of gap between the two lines - - - - - Effective collector bandgap-voltage + + Coplanar Gap - - - - - Effective substrate bandgap-voltage + + coplanar open - - - - - Coefficient K1 in T-dependent bandgap equation + + width of gap at end of line - - - - - Coefficient K2 in T-dependent bandgap equation + + Coplanar Open - - - - - Frist-order TC of tf0 + + coplanar short - - - - - Second-order TC of tf0 + + Coplanar Short - - - - - - 1/K^2 + + coplanar step - - - - - - - - - Exponent coefficient in transfer current temperature dependence - + + + + width of line 1 + grosimea liniei 1 - - - - Exponent coefficient in BE junction current temperature dependence - + + + width of line 2 + grosimea liniei 2 - - - - TC of epi-collector diffusivity + distance between ground planes - - - - - Relative TC of satur.drift velocity + + Coplanar Step - - - - - Relative TC of vces + + coupled transmission lines - - - - - TC of internal base resistance + + characteristic impedance of even mode - - - - TC of external base resistance + characteristic impedance of odd mode - - - - TC of external collector resistance - + + + + electrical length of the line + lungimea electrică a liniei - - - - TC of emitter resistances + relative dielectric constant of even mode - - - TC of avalanche prefactor + relative dielectric constant of odd mode - - - - TC of avalanche exponential factor + + attenuation factor per length of even mode - - - - - Flag for self-heating calculation + + attenuation factor per length of odd mode - - - - - - - - - - Thermal resistance + + Coupled Transmission Line - - - - - - - - - K/W + + D flip flop with asynchron reset - - - - - Ws/K + + D-FlipFlop - - - - - Temperature for which parameters are valid - + + + dc simulation + simulare dc - - - - - - - - - C - + + + + + relative tolerance for convergence + toleranţa relativă de convergenţa - - - - Temperature change for particular transistor - + + + + absolute tolerance for currents + toleranţa absolută pentru curenţi - - - - - - - - - K - + + + + + absolute tolerance for voltages + toleranţa absolută pentru tensiuni - - npn HICUM L0 v1.12 - + + put operating points into dataset + pune punctele de operare într-un set de date - - pnp HICUM L0 v1.12 - + + + + + maximum number of iterations until error + numărul maxim de iteraţii pâna la eroare - - HICUM Level 2 v2.22 verilog device - + + save subcircuit nodes into dataset + salvează nodurile subcircuitului intr-un dataset - - - - - GICCR constant + preferred convergence algorithm - - - - - A^2s + + + + method for solving the circuit matrix - - - - - - Zero-bias hole charge - + + dc block + bloc dc - - - - - - - - - Coul - + + dc Block + Bloc DC - - - - - - High-current correction for 2D and 3D effects - + + dc feed + alimentare dc - - - - - - Emitter minority charge weighting factor in HBTs - + + dc Feed + Alimentare dc - - - - - - Collector minority charge weighting factor in HBTs + + D flip flop with set and reset verilog device - - - - - - B-E depletion charge weighting factor in HBTs + + + + + cross coupled gate transfer function high scaling factor - - - - - B-C depletion charge weighting factor in HBTs + + + + cross coupled gate transfer function low scaling factor - - - - - Internal B-E saturation current + + + + cross coupled gate delay - - - - - - Internal B-E current ideality factor + + D-FlipFlop w/ SR - - - - - - Internal B-E recombination saturation current + + diac (bidirectional trigger diode) - - - - - - Internal B-E recombination current ideality factor + + + (bidirectional) breakover voltage - - - - - Peripheral B-E saturation current - - - - - - - - - Peripheral B-E current ideality factor + (bidirectional) breakover current - - - - - Peripheral B-E recombination saturation current + + + parasitic capacitance - - - - - - Peripheral B-E recombination current ideality factor - + + + + + + emission coefficient + coeficient de emisie - - - - - Non-ideality factor for III-V HBTs + + + intrinsic junction resistance - - - - - Base current recombination time constant at B-C barrier for high forward injection + + Diac - - - - - - Internal B-C saturation current + + + digital simulation - - - - - - Internal B-C current ideality factor + + type of simulation - - - - - External B-C saturation current + duration of TimeList simulation - - - - - - External B-C current ideality factor + + netlist format - - - - - - B-E tunneling saturation current + + + digital source - - - - - - Exponent factor for tunneling current - + + + number of the port + numărul portului - - - - Specifies the base node connection for the tunneling current + initial output value - - - - - Avalanche current factor + list of times for changing output value - - - - - - Exponent factor for avalanche current - + + diode + diodă - - - - - - Relative TC for FAVL - + + + + zero-bias junction capacitance + capacitate de jonctiune zero-bias - - - - - - Relative TC for QAVL - + + + + + + grading coefficient + coeficient de gradare - - - - - - Zero bias internal base resistance - + + + + + junction potential + potenţial de joncţiune - - - - - - Factor for geometry dependence of emitter current crowding - + + linear capacitance + capacitatea liniară - - - - - Correction factor for modulation by B-E and B-C space charge layer - + recombination current parameter + parametrul curentului de recombinare - - - - - Ratio of HF shunt to total internal capacitance (lateral NQS effect) - + emission coefficient for Isr + coeficientul de emisie pentru Isr - - - - - Ration of internal to total minority charge - + ohmic series resistance + Rezistenţa ohmica serială - - - - - - Forward ideality factor of substrate transfer current - + + + + transit time + timpul de tranziţie - - - - - C-S diode saturation current + high-injection knee current (0=infinity) - - - - - - Ideality factor of C-S diode current + + + + reverse breakdown voltage - - - - - Transit time for forward operation of substrate transistor + + + current at reverse breakdown voltage - - - - - - Substrate series resistance + + Bv linear temperature coefficient - - - - - - Substrate shunt capacitance + + Rs linear temperature coefficient - - - - - - Internal B-E zero-bias depletion capacitance + + Tt linear temperature coefficient - - - - - - Internal B-E built-in potential + + Tt quadratic temperature coefficient - - - - - - Internal B-E grading coefficient + + M linear temperature coefficient - - - - - Ratio of maximum to zero-bias value of internal B-E capacitance + M quadratic temperature coefficient - - - - - - Peripheral B-E zero-bias depletion capacitance + + + default area for diode - - - - - - Peripheral B-E built-in potential + + Diode + Diodă + + + + data voltage level shifter (digital to analogue) verilog device - - - - - Peripheral B-E grading coefficient + + voltage level - - - - - Ratio of maximum to zero-bias value of peripheral B-E capacitance + + time delay - - - - - - Internal B-C zero-bias depletion capacitance + + D2A Level Shifter - - - - - - Internal B-C built-in potential + + data voltage level shifter (analogue to digital) verilog device + + + + + + + + + + + + + - - - - - Internal B-C grading coefficient + + + + + + + + + V - - - - - - Internal B-C punch-through voltage + + A2D Level Shifter - - - - - - External B-C zero-bias depletion capacitance + + 2to4 demultiplexer verilog device - - - - - - External B-C built-in potential + + 2to4 Demux - - - - - - External B-C grading coefficient + + 3to8 demultiplexer verilog device - - - - - - External B-C punch-through voltage + + 3to8 Demux - - - - - Partitioning factor of parasitic B-C cap + + 4to16 demultiplexer verilog device - - - - - Partitioning factor of parasitic B-E cap + + 4to16 Demux - - - - - - C-S zero-bias depletion capacitance + + externally controlled voltage source - - - - - - C-S built-in potential - + + + voltage in Volts + tensiune în Volţi - - - - - - C-S grading coefficient + + Externally Controlled Voltage Source - - - - - - C-S punch-through voltage + + EPFL-EKV MOS 2.6 verilog device - - - - - - Low current forward transit time at VBC=0V + + long = 1, short = 2 - - - - - - Time constant for base and B-C space charge layer width modulation + + length parameter + - - - - Time constant for modelling carrier jam at low VCE - - - + - - - - - Neutral emitter storage time - - - - - - - - Exponent factor for current dependence of neutral emitter storage time + + + + + m - - - - - - Saturation time constant at high current densities + + Width parameter - - - - - Smoothing factor for current dependence of base and collector transit time + parallel multiple device number - - - - - Partitioning factor for base and collector portion + series multiple device number - - - - - Internal collector resistance at low electric field + gate oxide capacitance per unit area - - - - - - Voltage separating ohmic and saturation velocity regime + + F/m**2 - - - - - - Internal C-E saturation voltage + + metallurgical junction depth - - - - - Collector punch-through voltage + channel width correction - - - - - Storage time for inverse operation + channel length correction - - - - - Total parasitic B-E capacitance + long channel threshold voltage - - - - - Total parasitic B-C capacitance + body effect parameter - - - - - - Factor for additional delay time of minority charge + + V**(1/2) - - - - - Factor for additional delay time of transfer current + bulk Fermi potential - - - - - Flag for turning on and off of vertical NQS effect - + + + + transconductance parameter + parametrul de transconductanţă - - - - - - Flicker noise coefficient + + + A/V**2 - - - - - Flicker noise exponent factor + mobility reduction coefficient - - - - - Flag for determining where to tag the flicker noise source + + + + + + 1/V - - - - - Scaling factor for collector minority charge in direction of emitter width + mobility coefficient - - - - - - Scaling factor for collector minority charge in direction of emitter length + + + + V/m - - - - - - Bandgap voltage extrapolated to 0 K + + + longitudinal critical field - - - - - - First order relative TC of parameter T0 + + depletion length coefficient - - - - - - Second order relative TC of parameter T0 + + narrow-channel effect coefficient - - - - - - Temperature exponent for RCI0 + + reverse short channel charge density - - - - - - Relative TC of saturation drift velocity + + A*s/m**2 - - - - - - Relative TC of VCES + + characteristic length - - - - - Temperature exponent of internal base resistance + threshold voltage temperature coefficient - - - - - - Temperature exponent of external base resistance + + V/K - - - - - Temperature exponent of external collector resistance + mobility temperature coefficient - - - - - Temperature exponent of emitter resistance + Longitudinal critical field temperature exponent - - - - - Temperature exponent of mobility in substrate transistor transit time + Ibb temperature coefficient - - - - - Effective emitter bandgap voltage + + 1/K - - - - - Effective collector bandgap voltage + + heavily doped diffusion length - - - - Effective substrate bandgap voltage + drain/source diffusion sheet resistance - - - - - Coefficient K1 in T-dependent band-gap equation + + Ohm/square - - - - Coefficient K2 in T-dependent band-gap equation + source contact resistance - - - - - Exponent coefficient in B-E junction current temperature dependence + + + + + + + + + + + + + Ohm - - - - - - Relative TC of forward current gain for V2.1 model + + drain contact resistance - - - - Flag for turning on and off self-heating effect + gate to source overlap capacitance - - - - - J/W + + + + + F/m - - - - - Flag for compatibility with v2.1 model (0=v2.1) + + gate to drain overlap capacitance - - - - - - Temperature at which parameters are specified + + gate to bulk overlap capacitance - - - - - Temperature change w.r.t. chip temperature for particular transistor + first impact ionization coefficient - - HICUM L2 v2.22 + + 1/m - - HICUM Level 0 v1.2 verilog device + + second impact ionization coefficient - - - - reverse Early voltage (normalization volt.) + + saturation voltage factor for impact ionization - - - flag for turning on base related critical current + area related theshold voltage mismatch parameter - - - - Smoothing factor for the d.c. injection width + + V*m - - - - BE charge built-in voltage for d.c. transfer current + + area related gain mismatch parameter - - - charge BE exponent factor for d.c. transfer current + area related body effect mismatch parameter - - - - BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current + + sqrt(V)*m - - - TC of iqf + + + + + + + + + + + A + + + + + + - - - Exponent factor for temperature dependent thermal resistance + F - - npn HICUM L0 v1.2 + + + diode relative area - pnp HICUM L0 v1.2 + charge partition parameter - - HICUM Level 0 v1.2g verilog device + + + + + + + + parameter measurement temperature - - high-injection roll-off current + + + + + + + + Celsius - - TC of iqf (bandgap coefficient of zero bias hole charge) + + EPFL-EKV NMOS 2.6 - - TC of avalanche prefactor, identical to alfav of Hicum/L2 + + EPFL-EKV PMOS 2.6 - - TC of avalanche exponential factor, identical to alqav of Hicum/L2 + + equation defined device - - Emitter part coefficient of the zero bias hole charge temperature variation + + type of equations - Collector part coefficient of the zero bias hole charge temperature variation + number of branches - - Bandgap TC parameter of ver + + + current equation - - Bandgap TC parameter of vef + + + charge equation - - Specific recombination current at the BC barrier for high forward injection + + Equation Defined Device - - npn HICUM L0 v1.2g - + + equation + ecuaţie - - pnp HICUM L0 v1.2g - + + + + Equation + Ecuaţie - - HICUM Level 0 v1.3 verilog device - + + put result into dataset + pune rezultatul într-un set de date - - Flag for using third order solution for transfer current + + externally driven transient simulation - - bias dependence for reverse Early voltage - + + + integration method + metoda de integrare - - Flag for turning temperature dependence of tef0 on and off - + + + order of integration method + ordinul metodei de integrare - TC of Reverse Early voltage - + + initial step size in seconds + mărimea pasului iniţial în secunde - TC of AVER - + + minimum step size in seconds + mărimea pasului minim în secunde - - Bandgap difference between base and BE-junction - + + + relative tolerance of local truncation error + toleranţa relativă a erorii de truncare locală - Frist-order TC of iqfh - - - - - Second-order TC of iqfh - - - - - npn HICUM L0 v1.3 - + + absolute tolerance of local truncation error + toleranţa absolută a erorii locale de truncare - - pnp HICUM L0 v1.3 - + + + overestimation of local truncation error + supraestimare a erorii de truncare locală - - HICUM Level 2 v2.1 verilog device + + + relax time step raster - - Partitioning factor of parasitic B-C capacitance + + + perform an initial DC analysis - - Noise factor for internal base resistance + + + maximum step size in seconds - - HICUM L2 v2.1 + + External transient simulation - - HICUM Level 2 v2.23 verilog device + + 1bit full adder verilog device - - HICUM L2 v2.23 + + 1Bit FullAdder - - HICUM Level 2 v2.24 verilog device + + 2bit full adder verilog device - - HICUM L2 v2.24 + + 2Bit FullAdder - - hicumL2V2p31n verilog device + + gated D latch verilog device - - Weight factor for the low current minority charge + + Gated D-Latch - - Parameter describing the slope of hjEi(VBE) + + 4bit Gray to binary converter verilog device - - Smoothing parameter for hjEi(VBE) at high voltage + + 4Bit Gray2Bin - - Time constant for modeling carrier jam at low VCE - + + ground (reference potential) + masă (potenţial de referinţă) - Barrier voltage - - - - - Normalization parameter - - - - - Smoothing parameter for barrier voltage - - - - - fitting factor for critical current - - - - - Flag for turning on and off of correlated noise implementation - + Ground + Masă - - Emitter resistance flicker noise coefficient - + + gyrator (impedance inverter) + girator (invertor de impedanţă) - - Emitter resistance flicker noise exponent factor - + + gyrator ratio + ratia giratorului - - Bandgap difference between B and B-E junction used for hjEi0 and hf0 - + + Gyrator + Girator - - Temperature coefficient for ahjEi + + 1bit half adder verilog device - - Temperature coefficient for hjEi0 + + 1Bit HalfAdder - - Temperature coefficient for Rth - + + Harmonic balance simulation + Simulare Harmonic Balance - - First order relative TC of parameter Rth - + + number of harmonics + numărul de armonici - - HICUM L2 V2.31 - + + Harmonic balance + Harmonic balance @@ -12081,7 +7788,7 @@ Fals format de linie a 'component'! - + ERROR: No file name in SPICE component "%1". @@ -12504,11 +8211,15 @@ Fals format de linie a 'component'! Sursa de Tensiune Controlată în Curent - voltage controlled voltage source sursa de tensiune controlată în tensiune + + + voltage controlled resistor + + resistance gain @@ -12543,7 +8254,7 @@ Fals format de linie a 'component'! - + ERROR: No file name in %1 component "%2". @@ -12706,7 +8417,7 @@ Fals format de linie a 'component'! - + invalid invalid @@ -12815,7 +8526,7 @@ Fals format de linie a 'component'! - + Successfully exported @@ -12838,8 +8549,8 @@ Use PNG, JPEG or SVG graphics! - - + + verilog-a user devices @@ -12898,14 +8609,14 @@ Use PNG, JPEG or SVG graphics! - + diagrams - + paintings @@ -13023,16 +8734,16 @@ Set the Octave location on the application settings. - + - + untitled fara titlu - + Format Error: 'Painting' field is not closed! @@ -13208,17 +8919,17 @@ Câmp necunoscut! - + WARNING: Skipping library component "%1". - - ERROR: Cannot load library component "%1". + + ERROR: "%1": Cannot load library component "%2" from "%3" - + WARNING: Ignore simulation component in subcircuit "%1". @@ -13228,7 +8939,7 @@ Câmp necunoscut! - + ERROR: Only one digital simulation allowed. @@ -13356,11 +9067,17 @@ a substrate with lower permittivity and larger height. Cannot save settings file ! + + + Quarter wave filters do not allow low-pass nor high-pass masks + + + QucsActiveFilter - + &File @@ -13370,7 +9087,29 @@ a substrate with lower permittivity and larger height. - + + &View + + + + + &Console + + + + + Enables/disables the filter calculation console + + + + + Console + +Enables/disables the filter calculation console + + + + &Help @@ -13390,30 +9129,30 @@ a substrate with lower permittivity and larger height. - - + + Passband attenuation, Ap (dB) - + Stopband attenuation, As (dB) - - Cuttof frequency, Fc (Hz) + + Cutoff frequency, Fc (Hz) - - + + Stopband frequency, Fs (Hz) - + Passband ripple Rp(dB) @@ -13423,7 +9162,7 @@ a substrate with lower permittivity and larger height. - + Filter order @@ -13473,27 +9212,61 @@ a substrate with lower permittivity and larger height. - - Calculation console + + Low Pass - - Filter topology + + General filter amplitude-frequency response - - Filter type: + + + + Unable to implement filter with such parameters and topology +Change parameters and/or topology and try again! + + + + + + Filter calculation was successful - LowPass + Filter calculation terminated with error! + + + + + Filter calculation terminated with error + + + + + Lower cutoff frequency, Fl (Hz) + + + + + Copyright (C) 2014, 2015 by + + + + + Filter topology + Filter type: + + + + High Pass @@ -13519,62 +9292,45 @@ a substrate with lower permittivity and larger height. - + Cauer section - - General amplitude frequency response - - - - - Filter topology preview (one stage) - - - - + Filter parameters - + Transfer function and Topology - - General filter amplidure-frequency response - - - - + Filter topology preview - + Filter calculation console - + + + Ready. + Terminat. + + + Upper cutoff frequency of band-pass/band-stop filter is less than lower. Unable to implement such filter. Change parameters and try again. - - - - Unable to implement filter with such parameters and topology -Change parapeters and/or topology and try again! - - - - + Unable to use Cauer section for Chebyshev or Butterworth frequency response. Try to use another topology. @@ -13590,40 +9346,28 @@ frequency response. Try to use another topology. Function will be implemented in future version - - - -Filter calculation was sucessfull - - - - - -Filter calculation terminated with error - - Upper cutoff frequency, Fu (Hz) - - Lower cuttoff frequency, Fl (Hz) + + Transient bandwidth, TW (Hz) - - Transient bandwidth, TW (Hz) + + Error! - + Active filter design - + About... Despre... @@ -13635,12 +9379,7 @@ Active Filter synthesis program - - Copyright (C) 2014 by - - - - + About Qt @@ -13648,7 +9387,7 @@ Active Filter synthesis program QucsApp - + Schematic Schemă @@ -13664,42 +9403,42 @@ Active Filter synthesis program - + VHDL Sources - - + + Verilog Sources - - + + Verilog-A Sources - - + + Octave Scripts - + Spice Files - + Any File Orice Fişier - + The schematic search path has been refreshed. @@ -13719,7 +9458,7 @@ Active Filter synthesis program Scheme - + New Nou @@ -13804,13 +9543,13 @@ Active Filter synthesis program - + - + @@ -13833,7 +9572,7 @@ Active Filter synthesis program Eroare - + Cannot open "%1". @@ -13845,8 +9584,16 @@ Active Filter synthesis program - - + + + + + Search results + + + + + @@ -13865,13 +9612,18 @@ Active Filter synthesis program Info - + Default icon not found: %1.png - + + verilog-a user devices + + + + -port -port @@ -13882,14 +9634,14 @@ Active Filter synthesis program - + The document contains unsaved changes! Documentul conţine modificări nesalvate! - + Do you want to save the changes before copying? @@ -13900,13 +9652,13 @@ Active Filter synthesis program - + &Save &Salveaze - + Copy file @@ -13940,31 +9692,31 @@ Active Filter synthesis program - + Warning Avertisment - + This will delete the file permanently! Continue ? Fişierul va fii şters definitiv! Continuaţi? - + No Nu - + - + Yes Da - + unknown @@ -14125,7 +9877,7 @@ Active Filter synthesis program - + @@ -14139,7 +9891,7 @@ Active Filter synthesis program Terminat. - + Creating new text editor... @@ -14204,12 +9956,12 @@ Active Filter synthesis program - + Cancel Revocare - + Cannot overwrite an open document Documentul deschis nu poate fi rescris @@ -14224,7 +9976,7 @@ Active Filter synthesis program Salvare toate fişierele... - + Closing file... Inchidere fişiere... @@ -14248,10 +10000,6 @@ Active Filter synthesis program Open examples directory... - - OK - OK - Printing... @@ -16045,10 +11793,6 @@ About Qt by Trolltech Warnings in last simulation! Press F5 - - About... - Despre... - QucsAttenuator @@ -16316,7 +12060,7 @@ Editor de text foarte simplu pentur Qucs QucsFilter - + &File @@ -16356,7 +12100,7 @@ Editor de text foarte simplu pentur Qucs - + Filter type: @@ -16392,29 +12136,29 @@ Editor de text foarte simplu pentur Qucs - + Corner frequency: - + Stop frequency: - + Stop band frequency: - - + + Pass band ripple: - + Stop band attenuation: @@ -16482,19 +12226,19 @@ Filter synthesis program - + Result: - + Error Eroare - + Stop frequency must be greater than start frequency. @@ -16649,17 +12393,22 @@ Enables/disables the table of contents Despre - + Component Selection - - Search... + + Search Lib Components - + + Clear + + + + Component @@ -16674,13 +12423,19 @@ Enables/disables the table of contents - + About... Despre... Library Manager for Qucs + + + + + + Copyright (C) 2011-2015 Qucs Team @@ -16691,7 +12446,7 @@ Enables/disables the table of contents - + QucsLib Help @@ -16711,14 +12466,17 @@ Enables/disables the table of contents - - Search result + + + + + Search results - + - + @@ -16727,13 +12485,13 @@ Enables/disables the table of contents Eroare - + Cannot open "%1". - + @@ -16741,21 +12499,6 @@ Enables/disables the table of contents Library is corrupt. - - - Search Library Component - - - - - Result - - - - - No appropriate component found. - - QucsSettingsDialog @@ -17765,7 +13508,7 @@ Editează simbolul pentru aceasta schemă - + Error Eroare @@ -17783,7 +13526,7 @@ Set the admsXml location on the application settings. - + ERROR: Cannot create library file "%s". @@ -17792,83 +13535,46 @@ Set the admsXml location on the application settings. SearchDialog - - - - Dialog - - - - Text to search for - - - - Text to replace with - - - - Ask before replacing - - - - Case sensitive - - - - Whole words only - - - - Search backwards - - - - Next - - - - - Close @@ -17882,29 +13588,6 @@ Set the admsXml location on the application settings. Search Text - - - The search result contains all components whose -name contains the search string. All libraries -are included in the search. - - - - - Search string: - - - - - Search - - - - - - Search result - - SettingsDialog @@ -18347,7 +14030,7 @@ are included in the search. SymbolWidget - + Symbol: @@ -18356,6 +14039,13 @@ are included in the search. ! Drag n'Drop me ! + + + Warning: Symbol '%1' missing in Qucs Library. +Drag and Drop may still work. +Please contact the developers. + + TextDoc diff --git a/qucs/translations/qucs_ru.ts b/qucs/translations/qucs_ru.ts index 0839aee971..51ccd11abc 100644 --- a/qucs/translations/qucs_ru.ts +++ b/qucs/translations/qucs_ru.ts @@ -1109,10 +1109,6 @@ Save to file (Graphics format by extension) Сохранить как изображение (формат файла по расширению) - - Width in pixels - Ширина в пикселях - Height in pixels @@ -1138,10 +1134,6 @@ Cancel Отменить - - File - Файл - Width in pixels @@ -1187,10 +1179,6 @@ Export Schematic to Image - - Export to image - Сохранить как изображение - Export diagram to raster or vector image @@ -3546,62 +3534,6 @@ Resistor color code computation program - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - @@ -3757,10 +3689,6 @@ Resistor color code computation program - - - - polarity @@ -3965,10 +3893,6 @@ Resistor color code computation program - - - - @@ -4109,5713 +4033,1484 @@ Resistor color code computation program Соединительный проводник - - bsim3v34nMOS verilog device - verilog-модель bsim3v34nМОП + + + + + + + + + + + simulation temperature + температура моделирования + + + + capacitor + конденсатор + capacitance in Farad + ёмкость в фарадах + + + initial voltage for transient simulation + начальное напряжение для моделирования переходных процессов + + + + + + + + schematic symbol + схемное обозначение + + + + Capacitor + Конденсатор + + + + current controlled current source + источник тока, управляемый током + + + + + + forward transfer factor + коэффициент прямой передачи + + + + + + + + + + + + + + + delay time + время задержки + + + + Current Controlled Current Source + Источник тока, управляемый током + + + + current controlled voltage source + источник напряжения, управляемый током + + + + Current Controlled Voltage Source + Источник напряжения, управляемый током + + + + circulator + циркулятор + + + + reference impedance of port 1 + опорное полное сопротивление порта 1 + + + reference impedance of port 2 + опорное полное сопротивление порта 2 + + + reference impedance of port 3 + опорное полное сопротивление порта 3 + + + + Circulator + Циркулятор + + + + coaxial transmission line + коаксиальная линия передачи + + + + + relative permittivity of dielectric + относительная проницаемость диэлектрика + + + + + specific resistance of conductor + удельное сопротивление проводника + + + + + relative permeability of conductor + относительная проницаемость проводника + + + inner diameter of shield + внутренний диаметр экрана + + + diameter of inner conductor + диаметр внутреннего проводника + + + + mechanical length of the line + механическая длина линии + + + + + + loss tangent + тангенс угла диэлектрических потерь + + + + Coaxial Line + Коаксиальная линия + + + + 1bit comparator verilog device + verilog-модель 1-битного компаратора + + + + 1Bit Comparator + 1-битный компаратор + + + + 2bit comparator verilog device + verilog-модель 2-битного компаратора + + + + 2Bit Comparator + 2-битный компаратор + + + + 4bit comparator verilog device + verilog-модель 4-битного компаратора + + + + 4Bit Comparator + 4-битный компаратор + + + + number of input ports + число входов + + - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - simulation temperature - температура моделирования - - - - bsim3v34nMOS - bsim3v34nМОП - - - - bsim3v34pMOS verilog device - verilog-модель bsim3v34pМОП - - - - bsim3v34pMOS - bsim3v34pМОП - - - - bsim4v30nMOS verilog device - verilog-модель bsim4v30nМОП - - - - bsim4v30nMOS - bsim4v30nМОП - - - - bsim4v30pMOS verilog device - verilog-модель bsim4v30pМОП - - - - bsim4v30pMOS - bsim4v30pМОП - - - - capacitor - конденсатор - - - - capacitance in Farad - ёмкость в фарадах - - - - initial voltage for transient simulation - начальное напряжение для моделирования переходных процессов - - - - - - - - - schematic symbol - схемное обозначение - - - - Capacitor - Конденсатор - - - - current controlled current source - источник тока, управляемый током - - - - - - forward transfer factor - коэффициент прямой передачи - - - - - - - - - - - - - - - delay time - время задержки - - - - Current Controlled Current Source - Источник тока, управляемый током - - - - current controlled voltage source - источник напряжения, управляемый током - - - - Current Controlled Voltage Source - Источник напряжения, управляемый током - - - - circulator - циркулятор - - - - reference impedance of port 1 - опорное полное сопротивление порта 1 - - - - reference impedance of port 2 - опорное полное сопротивление порта 2 - - - - reference impedance of port 3 - опорное полное сопротивление порта 3 - - - - Circulator - Циркулятор - - - - coaxial transmission line - коаксиальная линия передачи - - - - - relative permittivity of dielectric - относительная проницаемость диэлектрика - - - - - - specific resistance of conductor - удельное сопротивление проводника - - - - - - relative permeability of conductor - относительная проницаемость проводника - - - - inner diameter of shield - внутренний диаметр экрана - - - - diameter of inner conductor - диаметр внутреннего проводника - - - - - mechanical length of the line - механическая длина линии - - - - - - - loss tangent - тангенс угла диэлектрических потерь - - - - Coaxial Line - Коаксиальная линия - - - - 1bit comparator verilog device - verilog-модель 1-битного компаратора - - - - 1Bit Comparator - 1-битный компаратор - - - - 2bit comparator verilog device - verilog-модель 2-битного компаратора - - - - 2Bit Comparator - 2-битный компаратор - - - - 4bit comparator verilog device - verilog-модель 4-битного компаратора - - - - 4Bit Comparator - 4-битный компаратор - - - - number of input ports - число входов - - - - - - - voltage of high level - напряжение высокого уровня - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Error - Ошибка - - - - Format Error: -Wrong line start! - Ошибка формата: -Неправильное начало строки! - - - - Format Error: -Unknown component! -%1 - -Do you make use of loadable components? - Ошибка формата: -Неизвестный компонент! -%1 - -Вы пытаетесь использовать загружаемые компоненты? - - - - Format Error: -Wrong 'component' line format! - Ошибка формата: -Неправильный формат строки у 'component'! - - - - coplanar line - копланарная линия - - - - - - - - - - - - - - name of substrate definition - название подложки - - - - - - - - - - - width of the line - ширина линии - - - - - - - width of a gap - ширина зазора - - - - - - - length of the line - длина линии - - - - - - - material at the backside of the substrate - материал на задней стороне подложки - - - - use approximation instead of precise equation - использовать приближение вместо точного уравнения - - - - Coplanar Line - Копланарная линия - - - - ideal coupler - идеальное устройство связи - - - - coupling factor - коэффициент связи - - - - phase shift of coupling path in degree - фазовый сдвиг связного пути в градусах - - - - Coupler - Устройство связи - - - - coplanar gap - разрыв копланарной линии - - - - width of gap between the two lines - ширина промежутка между двумя линиями - - - - Coplanar Gap - Разрыв копланарной линии - - - - coplanar open - разомкнутая копланарная линия - - - - width of gap at end of line - ширина разрыва на конце линии - - - - Coplanar Open - Разомкнутая копланарная линия - - - - coplanar short - замкнутая копланарная линия - - - - Coplanar Short - Замкнутая копланарная линия - - - - coplanar step - скачок ширины копланарной линии - - - - - - width of line 1 - ширина линии 1 - - - - - - width of line 2 - ширина линии 2 - - - - distance between ground planes - расстояние между земляными плоскостями - - - - Coplanar Step - Скачок ширины копланарной линии - - - - coupled transmission lines - связанные линии передачи - - - - characteristic impedance of even mode - характеристическое полное сопротивление чётного режима - - - - characteristic impedance of odd mode - характеристическое полное сопротивление нечётного режима - - - - - - - electrical length of the line - электрическая длина линии - - - - relative dielectric constant of even mode - диэлектрическая постоянная изолятора чётного режима - - - - relative dielectric constant of odd mode - диэлектрическая постоянная изолятора нечётного режима - - - - attenuation factor per length of even mode - коэффициент ослабления на единицу длины чётного режима - - - - attenuation factor per length of odd mode - коэффициент ослабления на единицу длины нечётного режима - - - - Coupled Transmission Line - Связанная линия передачи - - - - D flip flop with asynchron reset - D-триггер с асинхронным сбросом - - - - D-FlipFlop - D-триггер - - - - - dc simulation - моделирование на постоянном токе - - - - - - - relative tolerance for convergence - относительный допуск для конвергенции - - - - - - - absolute tolerance for currents - абсолютный допуск для токов - - - - - - - absolute tolerance for voltages - абсолютный допуск для напряжений - - - - put operating points into dataset - поместить рабочие точки в набор данных - - - - - - - maximum number of iterations until error - максимальное число итераций до возникновения ошибки - - - - save subcircuit nodes into dataset - сохранение результатов моделирования и рабочих точек в наборе данных - - - - preferred convergence algorithm - предпочтительный алгоритм сходимости - - - - - - method for solving the circuit matrix - метод решения матрицы схемы - - - - dc block - развязка - - - - dc Block - развязка от постоянного тока - - - - dc feed - подача постоянного тока - - - - dc Feed - подача постоянного тока - - - - D flip flop with set and reset verilog device - verilog-модель D-триггера с установкой и сбросом - - - - - - - cross coupled gate transfer function high scaling factor - верхний масштабный коэффициент передаточной функции затвора с перекрёстными связями - - - - - - - cross coupled gate transfer function low scaling factor - нижний масштабный коэффициент передаточной функции затвора с перекрёстными связями - - - - - - - cross coupled gate delay - задержка затвора с перекрёстными связями - - - - D-FlipFlop w/ SR - D-триггер с SR - - - - diac (bidirectional trigger diode) - диак (симметричный диодный тиристор) - - - - - (bidirectional) breakover voltage - (симметричное) напряжение включения - - - - (bidirectional) breakover current - (симметричный) ток включения - - - - - - parasitic capacitance - паразитная ёмкость - - - - - - - - emission coefficient - коэффициент эмиссии - - - - - - intrinsic junction resistance - собственное сопротивление перехода - - - - Diac - Диак - - - - - digital simulation - цифровое моделирование - - - - type of simulation - тип моделирования - - - - duration of TimeList simulation - продолжительность моделирования по списку моментов времени - - - - netlist format - формат схемы - - - - - digital source - цифровой источник - - - - - number of the port - номер порта - - - - initial output value - начальное выходное значение - - - - list of times for changing output value - моменты времени для изменения выходного значения - - - - diode - диод - - - - - - zero-bias junction capacitance - ёмкость перехода при нулевом смещении - - - - - - - - grading coefficient - коэффициент неидеальности - - - - - - - junction potential - потенциал перехода - - - - linear capacitance - линейная ёмкость - - - - recombination current parameter - рекомбинационный ток - - - - emission coefficient for Isr - коэффициент идеальности диода для Isr - - - - ohmic series resistance - омическое последовательное сопротивление - - - - - - transit time - время перехода - - - - high-injection knee current (0=infinity) - Граничный ток при большом уровне инжекции (0=бесконечность) - - - - - - reverse breakdown voltage - обратное напряжение пробоя - - - - - - current at reverse breakdown voltage - ток при обратном напряжении пробоя - - - - Bv linear temperature coefficient - линейный температурный коэффициент Bv - - - - Rs linear temperature coefficient - линейный температурный коэффициент Rs - - - - Tt linear temperature coefficient - линейный температурный коэффициент Tt - - - - Tt quadratic temperature coefficient - квадратный температурный коэффициент Tt - - - - M linear temperature coefficient - линейный температурный коэффициент M - - - - M quadratic temperature coefficient - квадратный температурный коэффициент M - - - - - default area for diode - площадь по умолчанию для диода - - - - Diode - Диод - - - - data voltage level shifter (digital to analogue) verilog device - verilog-модель схемы сдвига уровня (цифрового в аналоговый) - - - - - voltage level - уровень напряжения - - - - - time delay - временная задержка - - - - D2A Level Shifter - Схема сдвига уровня Ц-А - - - - data voltage level shifter (analogue to digital) verilog device - verilog-модель схемы сдвига уровня (аналогового в цифровой) - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - V - В - - - - A2D Level Shifter - Схема сдвига уровня А-Ц - - - - 2to4 demultiplexer verilog device - verilog-модель демультиплексора 2на4 - - - - 2to4 Demux - Демультиплексор 2на4 - - - - 3to8 demultiplexer verilog device - verilog-модель демультиплексора 3на8 - - - - 3to8 Demux - Демультиплексор 3на8 - - - - 4to16 demultiplexer verilog device - verilog-модель демультиплексора 4на16 - - - - 4to16 Demux - Демультиплексор 4на16 - - - - externally controlled voltage source - управляемый внешне источник напряжения - - - - - voltage in Volts - напряжение в вольтах - - - - Externally Controlled Voltage Source - Управляемый внешне источник напряжения - - - - EPFL-EKV MOS 2.6 verilog device - verilog-модель EPFL-EKV МОП 2.6 - - - - long = 1, short = 2 - длинный = 1, короткий = 2 - - - - length parameter - Длина - - - - - - - - - - - - m - м - - - - Width parameter - Ширина - - - - parallel multiple device number - число параллельных моделей - - - - series multiple device number - число последовательных моделей - - - - gate oxide capacitance per unit area - ёмкость затвор-окисел на единицу площади - - - - F/m**2 - Ф/м**2 - - - - metallurgical junction depth - глубина технологического перехода - - - - channel width correction - коррекция ширины канала - - - - channel length correction - коррекция длины канала - - - - long channel threshold voltage - пороговое напряжение длинного канала - - - - body effect parameter - параметр влияния подложки - - - - V**(1/2) - В**(1/2) - - - - bulk Fermi potential - объёмный потенциал Ферми - - - - - - transconductance parameter - передаточная проводимость - - - - - A/V**2 - А/В**2 - - - - mobility reduction coefficient - коэффициент снижения подвижности - - - - - - - - - - - - 1/V - 1/В - - - - mobility coefficient - коэффициент подвижности - - - - - - V/m - В/м - - - - - longitudinal critical field - продольное критическое поле - - - - depletion length coefficient - коэффициент длины обеднения - - - - narrow-channel effect coefficient - коэффициент влияния узкого канала - - - - reverse short channel charge density - обратная плотность заряда короткого канала - - - - A*s/m**2 - А*с/м**2 - - - - characteristic length - характеристическая длина - - - - threshold voltage temperature coefficient - температурный коэффициент порогового напряжения - - - - - - - - - - - - V/K - В/К - - - - mobility temperature coefficient - температурный коэффициент подвижности - - - - Longitudinal critical field temperature exponent - Температурный показатель продольного критического поля - - - - Ibb temperature coefficient - температурный коэффициент Ibb - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1/K - 1/К - - - - heavily doped diffusion length - длина диффузии при сильном легировании - - - - drain/source diffusion sheet resistance - сопротивление диффузионного слоя сток/исток - - - - Ohm/square - Ом/квадрат - - - - source contact resistance - контактное сопротивление истока - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Ohm - Ом - - - - drain contact resistance - контактное сопротивление стока - - - - gate to source overlap capacitance - ёмкость перекрытия затвора и истока - - - - - - - F/m - Ф/м - - - - gate to drain overlap capacitance - ёмкость перекрытия затвора и стока - - - - gate to bulk overlap capacitance - ёмкость перекрытия затвора и подложки - - - - first impact ionization coefficient - первый коэффициент ударной ионизации - - - - 1/m - 1/м - - - - second impact ionization coefficient - второй коэффициент ударной ионизации - - - - saturation voltage factor for impact ionization - фактор напряжения насыщения для ударной ионизации - - - - area related theshold voltage mismatch parameter - параметр несоответствия порогового напряжения, связанный с поверхностью - - - - V*m - В*м - - - - area related gain mismatch parameter - параметр несоответствия усиления, связанный с поверхностью - - - - area related body effect mismatch parameter - параметр несоответствия эффекта подложки, связанный с поверхностью - - - - sqrt(V)*m - sqrt(В)*м - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A - А - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - F - Ф - - - - - diode relative area - относительная площадь диода - - - - charge partition parameter - параметр разделения заряда - - - - - - - - - - parameter measurement temperature - температура, при которой измерены параметры модели - - - - - - - - - - Celsius - °C - - - - EPFL-EKV NMOS 2.6 - nМОП EPFL-EKV 2.6 - - - - EPFL-EKV PMOS 2.6 - pМОП EPFL-EKV 2.6 - - - - equation defined device - модель, заданная уравнением - - - - type of equations - тип уравнений - - - - number of branches - число ветвей - - - - - current equation - уравнение тока - - - - - charge equation - уравнение заряда - - - - Equation Defined Device - Модель, заданная уравнением - - - - equation - уравнение - - - - - - Equation - Уравнение - - - - put result into dataset - поместить результат в набор данных - - - - externally driven transient simulation - - - - - - integration method - метод интегрирования - - - - - order of integration method - порядок метода интегрирования - - - - - initial step size in seconds - начальный размер шага в секундах - - - - - minimum step size in seconds - минимальный размер шага в секундах - - - - - relative tolerance of local truncation error - относительный допуск на локальные ошибки усечения - - - - - absolute tolerance of local truncation error - абсолютный допуск на локальные ошибки усечения - - - - - overestimation of local truncation error - верхний предел переоценки ошибок усечения - - - - - relax time step raster - допустимые неточности шагов по времени - - - - - perform an initial DC analysis - выполнить начальный анализ на постоянном токе - - - - - maximum step size in seconds - максимальный размер шага в секундах - - - - External transient simulation - Внешнее моделирование переходного процесса - - - - 1bit full adder verilog device - verilog-модель 1-битного полного сумматора - - - - 1Bit FullAdder - 1-битный полный сумматор - - - - 2bit full adder verilog device - verilog-модель 2-битного полного сумматора - - - - 2Bit FullAdder - 2-битный полный сумматор - - - - gated D latch verilog device - verilog-модель управляемой D-защёлки - - - - Gated D-Latch - Управляемая D-защёлка - - - - 4bit Gray to binary converter verilog device - verilog-модель преобразователя 4-битного кода Грея в двоичный - - - - 4Bit Gray2Bin - - - - - ground (reference potential) - земля (опорный потенциал) - - - - Ground - Земля - - - - gyrator (impedance inverter) - гиратор (преобразователь полного сопротивления) - - - - gyrator ratio - коэффициент гирации - - - - Gyrator - Гиратор - - - - 1bit half adder verilog device - verilog-модель 1-битного полусумматора - - - - 1Bit HalfAdder - 1-битный полусумматор - - - - Harmonic balance simulation - Моделирование гармонического баланса - - - - number of harmonics - число гармоник - - - - Harmonic balance - Гармонический баланс - - - - HBT model by Ferdinand-Braun-Institut (FBH), Berlin - Модель ГБТ Института высокочастотной техники имени Фердинанда Брауна (FBH) в Берлине - - - - - - - Ignored - Игнорировано - - - - Device operating temperature, Celsius - Рабочая температура модели, градусы Цельсия - - - - Thermal resistance, K/W - Тепловое сопротивление, К/Вт - - - - - - - - - - - - - Thermal capacitance - Теплоёмкость - - - - Scaling factor, number of emitter fingers - Масштабный коэффициент, число эмиттерных зон - - - - Length of emitter finger, m - Длина эмиттерной зоны, м - - - - Width of emitter finger, m - Ширинаэ миттерной зоны, м - - - - Forward saturation current density, A/um^2 - Плотность тока насыщения в прямом включении, А/мкм² - - - - Forward current emission coefficient - Коэффициент эмиссии тока в прямом включении - - - - Forward thermal activation energy, V, (0 == disables temperature dependence) - Тепловая энергия активации в прямом включении, В, (0 == отключение температурной зависимости) - - - - B-E leakage saturation current density, A/um^2 - Плотность тока утечки Б-Э в режиме насыщения, А/мкм² - - - - B-E leakage emission coefficient - Коэффициент эмиссии для Б-Э тока утечки - - - - Limiting resistor of B-E leakage diode, Ohm - Ограничительный резистор диода утечки Б-Э, Ом - - - - B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - Тепловая энергия активации утечки Б-Э, В, (0 == отключение температурной зависимости) - - - - 2nd B-E leakage saturation current density, A/um^2 - Плотность тока утечки 2-го перехода Б-Э в режиме насыщения, А/мкм² - - - - 2nd B-E leakage emission coefficient - Коэффициент эмиссии для тока утечки 2-го перехода Б-Э - - - - 2nd Limiting resistor of B-E leakage diode, Ohm - 2-й ограничительный резистор диода утечки Б-Э, Ом - - - - 2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - 2-я тепловая энергия активации утечки Б-Э, В, (0 == отключение температурной зависимости) - - - - Reverse saturation current density, A/um^2 - Плотность обратного тока насыщения, А/мкм² - - - - Reverse current emission coefficient - Коэффициент эмиссии обратного тока - - - - Reverse thermal activation energy, V, (0 == disables temperature dependence) - Тепловая энергия активации в обратном включении, В, (0 == отключение температурной зависимости) - - - - Fraction of Cjc that goes to internal base node - Доля Cjc, приходящаяся на внутренний вывод базы - - - - B-C leakage saturation current density, A/um^2 (0. switches off diode) - Плотность тока утечки Б-К в режиме насыщения, А/мкм² (0. отключает диод) - - - - B-C leakage emission coefficient (0. switches off diode) - Коэффициент эмиссии для Б-К тока утечки (0. отключает диод) - - - - Limiting resistor of B-C leakage diode, Ohm - Ограничительный резистор диода утечки Б-К, Ом - - - - B-C leakage thermal activation energy, V, (0 == disables temperature dependence) - Тепловая энергия активации утечки Б-К, В, (0 == отключение температурной зависимости) - - - - Ideal forward beta - Идеальный прямой коэффициент передачи тока - - - - Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence) - Температурный коэффициент усиления тока в прямом включении, -1/К, (0 == отключение температурной зависимости) - - - - Ideal reverse beta - Идеальный обратный коэффициент передачи тока - - - - Forward Early voltage, V, (0 == disables Early Effect) - Прямое напряжение Эрли, В, (0 == отключение эффекта Эрли) - - - - Reverse Early voltage, V, (0 == disables Early Effect) - Обратное напряжение Эрли, В, (0 == отключение эффекта Эрли) - - - - Forward high-injection knee current, A, (0 == disables Webster Effect) - Граничный прямой ток при большом уровне инжекции, А, (0 == отключение эффекта Вебстера) - - - - Reverse high-injection knee current, A, (0 == disables Webster Effect) - Граничный обратный ток при большом уровне инжекции, А, (0 == отключение эффекта Вебстера) - - - - C-E breakdown exponent, (0 == disables collector break-down) - Показатель пробоя К-Э, (0 == отключение пробоя коллектора) - - - - C-E breakdown voltage, V, (0 == disables collector break-down) - Напряжение пробоя К-Э, В, (0 == отключение пробоя коллектора) - - - - C-E breakdown factor, (0 == disables collector break-down) - Фактор пробоя К-Э, (0 == отключение пробоя коллектора) - - - - B-E breakdown voltage, V, (0 == disables emitter break-down) - Напряжение пробоя Б-Э, В (0 == отключение пробоя эмиттера) - - - - Ideal reverse transit time, s - Идеальное время пролёта при инверсном включении, сек - - - - Extrinsic BC diffusion capacitance, F - Внешняя диффузионная ёмкость базы, Ф - - - - Ideal forward transit time, s - Идеальное время пролёта в прямом включении, сек - - - - Temperature coefficient of forward transit time - Температурный коэффициент времени пролёта в прямом включении - - - - Excess transit time coefficient at base push-out - Коэффициент дополнительного времени пролёта при расширении базы - - - - Smoothing parameter for Thcs - Сглаживающий параметр для Thcs - - - - B-E zero-bias depletion capacitance, F/um^2 - Ёмкость Б-Э при нулевом смещении, Ф/мкм² - - - - B-E junction exponential factor - Множитель экспоненты для Б-Э - - - - B-E junction built-in potential, V - Контактная разность потенциалов Б-Э, В - - - - B-C zero-bias depletion capacitance, F/um^2 - Ёмкость Б-К при нулевом смещении, Ф/мкм² - - - - B-C junction exponential factor - Множитель экспоненты для Б-К - - - - B-C junction built-in potential, V - Контактная разность потенциалов Б-К, В - - - - not used - не используется - - - - Minimum B-C depletion capacitance (Vbc dependence), F/um^2 - Минимальная ёмкость Б-К (зависимость от Vbc), Ф/мкм² - - - - Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction) - Ток коллектора, когда Cbc достигает Cmin, А/мкм² (0 == отключение уменьшения Cbc) - - - - Fraction of Cmin, lower limit of BC capacitance (Ic dependence) - Доля Cmin, нижний предел ёмкости БК (зависимость от Ic) - - - - Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out) - Начало расширения базы при низких напряжениях, Ом*мкм² (0 == отключение пропечатывания) - - - - Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out) - Начало расширенияя базы при высоких напряжениях, А/мкм² (0 == отключение пропечатывания базы) - - - - Slope of Jk at high currents , Ohm*um^2 - Наклон Jk при больших токах, Ом*мкм² - - - - Voltage shift of base push-out onset, V - Сдвиг напряжения при начале расширения базы, В - - - - Collector resistance, Ohm/finger - Сопротивление коллектора, Ом/полоска - - - - Emitter resistance, Ohm/finger - Сопротивление эмиттера, Ом/полоска - - - - Extrinsic base resistance, Ohm/finger - Внешнее сопротивление базы, Ом/полоска - - - - Inner Base ohmic resistance, Ohm/finger - Внутреннее омическое сопротивление базы, Ом/полоска - - - - Collector inductance, H - Индуктивность коллектора, Гн - - - - Emitter inductance, H - Индуктивность эмиттера, Гн - - - - Base inductance, H - Индуктивность базы, Гн - - - - Extrinsic B-C capacitance, F - Внешняя ёмкость Б-К, Ф - - - - Extrinsic base capacitance, F - Внешняя ёмкость базы, Ф - - - - Extrinsic collector capacitance, F - Внешняя ёмкость коллектора, Ф - - - - - Flicker-noise coefficient - Коэффициент 1/f-шума - - - - - Flicker-noise exponent - Показатель степени 1/f-шума - - - - - Flicker-noise frequency exponent - Частотная зависимость 1/f-шума - - - - Burst noise coefficient - Коэффициент дробового шума - - - - Burst noise exponent - Показатель степени дробового шума - - - - Burst noise corner frequency, Hz - Граничная частота дробового шума, Гц + + + + voltage of high level + напряжение высокого уровня + + - Ambient temperature at which the parameters were determined - Температура окружающей среды, при которой определены параметры модели - - - - FBH HBT - FBH ГБТ - - - - HICUM Level 0 v1.12 verilog device - verilog-модель HICUM Level 0 v1.12 - - + + + + + + + + + + + - - - - (Modified) saturation current - (Изменённый) ток насыщения - - - - - - - Non-ideality coefficient of forward collector current - Коэффициент неидеальности прямого коллекторного тока - - - - - - - Non-ideality coefficient of reverse collector current - Коэффициент неидеальности обратного коллекторного тока - - - - - - - - - - - - - - - forward Early voltage (normalization volt.) - напряжение Эрли в прямом направлении (напр. нормализации) - - - - - - - forward d.c. high-injection roll-off current - прямой постоянный ток спада при сильной инжекции - - - - - - - inverse d.c. high-injection roll-off current - обратный постоянный ток спада при сильной инжекции - - - - - - - high-injection correction current - ток коррекции при сильной инжекции - - - - - - high-injection correction factor - поправка на сильную инжекцию - - - - - - - BE saturation current - ток насыщения Б-Э - - - - - - - BE non-ideality factor - коэффициент неидеальности для Б-Э - - - - - - - BE recombination saturation current - рекомбинационный ток насыщения Б-Э - - - - - - - BE recombination non-ideality factor - рекомбинационный кэффициент неидеальности Б-Э - - - - - - - BC saturation current - ток насыщения Б-К - - - - - - - BC non-ideality factor - коэффициент неидеальности для Б-К - - - - - - - Zero-bias BE depletion capacitance - Ёмкость перехода Б-Э при нулевом смещении - - - - - - - BE built-in voltage - Потенциал поля перехода Б-Э - - - - - - - BE exponent factor - Показатель степени для перехода Б-Э - - - - - - - Ratio of maximum to zero-bias value - Отношение максимального значения к значению при нулевом смещении - - - - - - - low current transit time at Vbici=0 - Время пролёта при низком токе при Vbici=0 - - - - - - - Base width modulation contribution - Вклад модуляции ширины базы - - - - - - - SCR width modulation contribution - Вклад модуляции ширины однооперационного тринистора - - - - - - - Storage time in neutral emitter - Время хранения в нейтральном эмиттере - - - - - - - Exponent factor for emitter transit time - Показатель степени для времени переноса заряда эмиттера - - - - - - - Saturation time at high current densities - Время насыщения при высокой плотности тока - - - - - - - Smoothing factor for current dependence - Коэффициент сглаживания для токовой зависимости - - - - - - - Storage time at inverse operation - Время хранения в инверсном режиме - - - - - - - Low-field collector resistance under emitter - Сопротивление коллектора под эмиттером при слабом поле - - - - - - - Voltage dividing ohmic and satur.region - Напряжение разделения омической и насыщ. областей + + + + + + + + + + + + + + + + + + Error + Ошибка - - - - - - - - - Punch-through voltage - Напряжение проникновения + + Format Error: +Wrong line start! + Ошибка формата: +Неправильное начало строки! - - - - - Saturation voltage - Напряжение насыщения + + Format Error: +Unknown component! +%1 + +Do you make use of loadable components? + Ошибка формата: +Неизвестный компонент! +%1 + +Вы пытаетесь использовать загружаемые компоненты? - - - - - Total zero-bias BC depletion capacitance - Полная ёмкость Б-К перехода при нулевом смещении + + Format Error: +Wrong 'component' line format! + Ошибка формата: +Неправильный формат строки у 'component'! - - - - - BC built-in voltage - Потенциал поля перехода Б-К + + coplanar line + копланарная линия - - - - - BC exponent factor - Множитель экспоненты для Б-К + + + + + + + + + + + + name of substrate definition + название подложки - - - - Punch-through voltage of BC junction - Напряжение проникновения перехода Б-К - - - - - - - Zero-bias external BC depletion capacitance - Внешняя ёмкость Б-К перехода при нулевом смещении - - - - - - - External BC built-in voltage - Внешний потенциал поля перехода Б-К - - - - - - - External BC exponent factor - Внешний множитель экспоненты для Б-К - - - - - - - Split factor = Cjci0/Cjc0 - Коэффициент расщепления = Cjci0/Cjc0 + + + + + + + + width of the line + ширина линии - - - - Internal base resistance at zero-bias - Собственное сопротивление базы при нулевом смещении + + + + width of a gap + ширина зазора - - - - - Geometry factor - Геометрический фактор + + + + + length of the line + длина линии - - - - - - - - - External base series resistance - Внешнее последовательное сопротивление базы + + + + material at the backside of the substrate + материал на задней стороне подложки - - - - - - - - - Emitter series resistance - Последовательное сопротивление эмиттера + use approximation instead of precise equation + использовать приближение вместо точного уравнения - - - - - - - - - - External collector series resistance - Внешнее последовательное сопротивление коллектора + + Coplanar Line + Копланарная линия - - - - - - - - - - Substrate transistor transfer saturation current - Насыщенный ток переноса заряда транзистора на подложке + + ideal coupler + идеальное устройство связи - - - - - Substrate transistor transfer current non-ideality factor - Коэффициент неидельности тока переноса заряда транзистора на подложке + + coupling factor + коэффициент связи - - - - SC saturation current - Ток насыщения П-К + phase shift of coupling path in degree + фазовый сдвиг связного пути в градусах - - - - - SC non-ideality factor - Коэффициент неидеальности для П-К + + Coupler + Устройство связи - - - - - Zero-bias SC depletion capacitance - Ёмкость перехода П-Э при нулевом смещении + + coplanar gap + разрыв копланарной линии - - - - - SC built-in voltage - Потенциал поля перехода П-К + + width of gap between the two lines + ширина промежутка между двумя линиями - - - - - External SC exponent factor - Внешний множитель экспоненты для П-К + + Coplanar Gap + Разрыв копланарной линии - - - - - SC punch-through voltage - Напряжение проникновения П-К + + coplanar open + разомкнутая копланарная линия - - - - - Collector-base isolation (overlap) capacitance - Ёмкость изоляции (перекрытия) коллектор-база + + width of gap at end of line + ширина разрыва на конце линии - - - - - Emitter-base oxide capacitance - Ёмкость окисла эмиттер-базового перехода + + Coplanar Open + Разомкнутая копланарная линия - - - - - Exponent factor - Множитель экспоненты + + coplanar short + замкнутая копланарная линия - - - - - Prefactor - Предмножитель + + Coplanar Short + Замкнутая копланарная линия - - - - - M^(1-AF) - + + coplanar step + скачок ширины копланарной линии - - - - - flicker noise exponent factor - показатель степени 1/f-шума + + + + width of line 1 + ширина линии 1 - - - - Bandgap-voltage - Контактная разность потенциалов - - - - - - - Effective emitter bandgap-voltage - Эффективная контактная разность потенциалов эмиттера + + + width of line 2 + ширина линии 2 - - - - - Effective collector bandgap-voltage - Эффективная контактная разность потенциалов коллектора + + distance between ground planes + расстояние между земляными плоскостями - - - - - Effective substrate bandgap-voltage - Эффективная контактная разность потенциалов подложки + + Coplanar Step + Скачок ширины копланарной линии - - - - - Coefficient K1 in T-dependent bandgap equation - Коэффициент K1 в зависящем от T уравнении потенциального барьера + + coupled transmission lines + связанные линии передачи - - - - - Coefficient K2 in T-dependent bandgap equation - Коэффициент K2 в зависящем от T уравнении потенциального барьера + + characteristic impedance of even mode + характеристическое полное сопротивление чётного режима - - - - - Frist-order TC of tf0 - ТК первого порядка для tf0 + + characteristic impedance of odd mode + характеристическое полное сопротивление нечётного режима - - - - - Second-order TC of tf0 - ТК второго порядка для tf0 + + + + + electrical length of the line + электрическая длина линии - - - - - - 1/K^2 - 1/К² + + relative dielectric constant of even mode + диэлектрическая постоянная изолятора чётного режима - - - - - - - - Exponent coefficient in transfer current temperature dependence - Коэффициент в показателе степени в температурной зависимости тока переноса + relative dielectric constant of odd mode + диэлектрическая постоянная изолятора нечётного режима - - - - Exponent coefficient in BE junction current temperature dependence - Коэффициент в показателе степени в температурной зависимости тока Б-Э перехода + attenuation factor per length of even mode + коэффициент ослабления на единицу длины чётного режима - - - - TC of epi-collector diffusivity - Температурный коэффициент диффузии эпитаксиального слоя (коллектора) + attenuation factor per length of odd mode + коэффициент ослабления на единицу длины нечётного режима - - - - - Relative TC of satur.drift velocity - Относительный ТК скорости дрейфа насыщения + + Coupled Transmission Line + Связанная линия передачи - - - - - Relative TC of vces - Относительный ТК vces + + D flip flop with asynchron reset + D-триггер с асинхронным сбросом - - - - - TC of internal base resistance - ТК собственного сопротивления базы + + D-FlipFlop + D-триггер - - - - - TC of external base resistance - ТК внешнего сопротивления базы + + + dc simulation + моделирование на постоянном токе - - - - - TC of external collector resistance - ТК внешнего сопротивления коллектора + + + + + relative tolerance for convergence + относительный допуск для конвергенции - - - - TC of emitter resistances - ТК сопротивлений эмиттера + + + + absolute tolerance for currents + абсолютный допуск для токов - - - TC of avalanche prefactor - ТК лавинного предмножителя + + + + absolute tolerance for voltages + абсолютный допуск для напряжений - - - - TC of avalanche exponential factor - ТК лавинного коэффициента + + put operating points into dataset + поместить рабочие точки в набор данных - - - - Flag for self-heating calculation - Флаг для расчёта саморазогрева + + + + maximum number of iterations until error + максимальное число итераций до возникновения ошибки - - - - - - - - - Thermal resistance - Тепловое сопротивление - - - - - - - - - - - K/W - K/Вт + save subcircuit nodes into dataset + сохранение результатов моделирования и рабочих точек в наборе данных - - - - Ws/K - Втс/К - - - - - - - Temperature for which parameters are valid - Температура, при которой параметры правильны + preferred convergence algorithm + предпочтительный алгоритм сходимости - - - - - - - - - C - C + + + + method for solving the circuit matrix + метод решения матрицы схемы - - - - - Temperature change for particular transistor - Изменение температуры для отдельного транзистора + + dc block + развязка - - - - - - - - - K - K + + dc Block + развязка от постоянного тока - - npn HICUM L0 v1.12 - npn HICUM L0 v1.12 + + dc feed + подача постоянного тока - - pnp HICUM L0 v1.12 - pnp HICUM L0 v1.12 + + dc Feed + подача постоянного тока - - HICUM Level 2 v2.22 verilog device - verilog-модель HICUM Level 2 v2.22 + + D flip flop with set and reset verilog device + verilog-модель D-триггера с установкой и сбросом - - - - - GICCR constant - Константа GICCR + + + + cross coupled gate transfer function high scaling factor + верхний масштабный коэффициент передаточной функции затвора с перекрёстными связями - - - - - A^2s - А²с + + + + + cross coupled gate transfer function low scaling factor + нижний масштабный коэффициент передаточной функции затвора с перекрёстными связями - - - - - Zero-bias hole charge - Заряд дырок при нулевом смещении + + + + cross coupled gate delay + задержка затвора с перекрёстными связями - - - - - - - - - Coul - Кл + + D-FlipFlop w/ SR + D-триггер с SR - - - - - - High-current correction for 2D and 3D effects - Поправка для больших токов для 2D- и 3D-эффектов + + diac (bidirectional trigger diode) + диак (симметричный диодный тиристор) - - - - - - Emitter minority charge weighting factor in HBTs - Весовой фактор эмиттерных неосновных носителей заряда в ГБТ + + + (bidirectional) breakover voltage + (симметричное) напряжение включения - - - - - Collector minority charge weighting factor in HBTs - Весовой фактор коллекторных неосновных носителей заряда в ГБТ + (bidirectional) breakover current + (симметричный) ток включения - - - - - B-E depletion charge weighting factor in HBTs - Весовой фактор заряда Б-Э перехода в ГБТ + + + parasitic capacitance + паразитная ёмкость - - - - - - B-C depletion charge weighting factor in HBTs - Весовой фактор заряда Б-К перехода в ГБТ + + + + + + emission coefficient + коэффициент эмиссии - - - - - Internal B-E saturation current - Внутренний Б-Э ток насыщения + + + intrinsic junction resistance + собственное сопротивление перехода - - - - - - Internal B-E current ideality factor - Коэффициент идеальности внутреннего Б-Э тока + + Diac + Диак - - - - - - Internal B-E recombination saturation current - Внутренний Б-Э рекомбинационный ток насыщения + + + digital simulation + цифровое моделирование - - - - - - Internal B-E recombination current ideality factor - Коэффициент идеальности внутреннего Б-Э рекомбинационного тока + + type of simulation + тип моделирования - - - - - Peripheral B-E saturation current - Периферийный ток насыщения Б-Э перехода + duration of TimeList simulation + продолжительность моделирования по списку моментов времени - - - - - - Peripheral B-E current ideality factor - Коэффициент идеальности Б-Э периферийного тока + + netlist format + формат схемы - - - - - - Peripheral B-E recombination saturation current - Периферийный Б-Э рекомбинационный ток насыщения + + + digital source + цифровой источник - - - - - - Peripheral B-E recombination current ideality factor - Коэффициент идеальности периферийного Б-Э рекомбинационного тока + + + number of the port + номер порта - - - - - Non-ideality factor for III-V HBTs - Коэффициент неидеальности для III-V ГБТ + initial output value + начальное выходное значение - - - - Base current recombination time constant at B-C barrier for high forward injection - Постоянная времени рекомбинации базового тока на Б-К-переходе для большого уровня инжекции при прямом смещении + list of times for changing output value + моменты времени для изменения выходного значения - - - - - - Internal B-C saturation current - Внутренний Б-К ток насыщения + + diode + диод - - - - - - Internal B-C current ideality factor - Коэффициент идеальности внутреннего Б-К тока + + + + zero-bias junction capacitance + ёмкость перехода при нулевом смещении - - - - - External B-C saturation current - Внешний Б-К ток насыщения - - - - - - - - External B-C current ideality factor - Коэффициент идеальности внешнего Б-К тока + + + + + grading coefficient + коэффициент неидеальности - - - - - B-E tunneling saturation current - Б-Э туннельный ток насыщения + + + + junction potential + потенциал перехода - - - - - - Exponent factor for tunneling current - Показатель степени для туннельного тока + + linear capacitance + линейная ёмкость - - - - Specifies the base node connection for the tunneling current - Задаёт место соединения базы для туннельного тока + recombination current parameter + рекомбинационный ток - - - - - Avalanche current factor - Фактор лавинного тока - - - - - - - - Exponent factor for avalanche current - Показатель степени для лавинного тока + emission coefficient for Isr + коэффициент идеальности диода для Isr - - - - - - Relative TC for FAVL - Относительный температурный коэффициент для FAVL + + ohmic series resistance + омическое последовательное сопротивление - - - - - - Relative TC for QAVL - Относительный температурный коэффициент для QAVL + + + + transit time + время перехода - - - - - - Zero bias internal base resistance - Внутреннее сопротивление базы при нулевом смещении + + high-injection knee current (0=infinity) + Граничный ток при большом уровне инжекции (0=бесконечность) - - - - - - Factor for geometry dependence of emitter current crowding - Фактор геометрической зависимости вытеснения эмиттерного тока + + + + reverse breakdown voltage + обратное напряжение пробоя - - - - - Correction factor for modulation by B-E and B-C space charge layer - Поправочный коэффциент для модуляции Б-Э и Б-К слоя простанственного заряда + + + current at reverse breakdown voltage + ток при обратном напряжении пробоя - - - - - - Ratio of HF shunt to total internal capacitance (lateral NQS effect) - Отношение шунтирующей на ВЧ к полной внутренней ёмкости (побочный неквазистатический эффект) + + Bv linear temperature coefficient + линейный температурный коэффициент Bv - - - - - Ration of internal to total minority charge - Отношение внутреннего к полному заряду неосновных носителей - - - - - - - - Forward ideality factor of substrate transfer current - Прямой коэффициент идеальности тока переноса заряда подложки + Rs linear temperature coefficient + линейный температурный коэффициент Rs - - - - - C-S diode saturation current - Ток насыщения перехода К-П + Tt linear temperature coefficient + линейный температурный коэффициент Tt - - - - - - Ideality factor of C-S diode current - Коэффициента идеальности тока перехода К-П + + Tt quadratic temperature coefficient + квадратный температурный коэффициент Tt - - - - - Transit time for forward operation of substrate transistor - Время пролёта для транзистора подложки в прямом направлении + M linear temperature coefficient + линейный температурный коэффициент M - - - - - - Substrate series resistance - Последовательное сопротивление подложки + + M quadratic temperature coefficient + квадратный температурный коэффициент M - - - - - - Substrate shunt capacitance - Шунтирующая ёмкость подложки + + + default area for diode + площадь по умолчанию для диода - - - - - - Internal B-E zero-bias depletion capacitance - Внутренняя ёмкость Б-Э перехода при нулевом смещении + + Diode + Диод - - - - - - Internal B-E built-in potential - Внутренняя контактная разность потенциалов Б-Э + + data voltage level shifter (digital to analogue) verilog device + verilog-модель схемы сдвига уровня (цифрового в аналоговый) - - - - - Internal B-E grading coefficient - Внутренний коэффициент неидеальности Б-Э + + voltage level + уровень напряжения - - - - - Ratio of maximum to zero-bias value of internal B-E capacitance - Отношение максимального значения внутренней ёмкости Б-Э к величине при нулевом смещении + + time delay + временная задержка - - - - - - Peripheral B-E zero-bias depletion capacitance - Периферийная ёмкость перехода Б-Э при нулевом смещении + + D2A Level Shifter + Схема сдвига уровня Ц-А - - - - - - Peripheral B-E built-in potential - Периферийная контактная разность потенциалов Б-Э + + data voltage level shifter (analogue to digital) verilog device + verilog-модель схемы сдвига уровня (аналогового в цифровой) + + + + + + + + + + - - - - - Peripheral B-E grading coefficient - Периферийный коэффициент неидеальности перехода Б-Э - - - - - - - - Ratio of maximum to zero-bias value of peripheral B-E capacitance - Отношение максимального значения периферийной ёмкости Б-Э к величине при нулевом смещении - - - - - - - - Internal B-C zero-bias depletion capacitance - Внутренняя ёмкость Б-К перехода при нулевом смещении + + + + + + + + + + + + V + В - - - - - - Internal B-C built-in potential - Внутренняя контактная разность потенциалов Б-К + + A2D Level Shifter + Схема сдвига уровня А-Ц - - - - - - Internal B-C grading coefficient - Внутренний кэффициент неидеальности Б-К + + 2to4 demultiplexer verilog device + verilog-модель демультиплексора 2на4 - - - - - - Internal B-C punch-through voltage - Внутреннее напряжение проникновения Б-К + + 2to4 Demux + Демультиплексор 2на4 - - - - - - External B-C zero-bias depletion capacitance - Внешняя ёмкость Б-К перехода при нулевом смещении + + 3to8 demultiplexer verilog device + verilog-модель демультиплексора 3на8 - - - - - - External B-C built-in potential - Внешняя контактная разность потенциалов Б-К + + 3to8 Demux + Демультиплексор 3на8 - - - - - - External B-C grading coefficient - Внешний коэффициент неидеальности Б-К + + 4to16 demultiplexer verilog device + verilog-модель демультиплексора 4на16 - - - - - - External B-C punch-through voltage - Внешнее напряжение проникновения Б-К + + 4to16 Demux + Демультиплексор 4на16 - - - - - Partitioning factor of parasitic B-C cap - Разделительный фактор паразитной ёмкости Б-К + + externally controlled voltage source + управляемый внешне источник напряжения - - - - - Partitioning factor of parasitic B-E cap - Разделительный фактор паразитной ёмкости Б-Э + + + voltage in Volts + напряжение в вольтах - - - - - - C-S zero-bias depletion capacitance - Ёмкость перехода К-П при нулевом смещении + + Externally Controlled Voltage Source + Управляемый внешне источник напряжения - - - - - - C-S built-in potential - Контактная разность потенциалов К-П + + EPFL-EKV MOS 2.6 verilog device + verilog-модель EPFL-EKV МОП 2.6 - - - - - - C-S grading coefficient - Коэффициент неидеальности перехода К-П + + long = 1, short = 2 + длинный = 1, короткий = 2 - - - - - C-S punch-through voltage - Напряжение проникновения К-П + length parameter + Длина + - - - - - Low current forward transit time at VBC=0V - Время пролёта в прямом направлении при низком токе при VBC=0 В - - + - - - - - Time constant for base and B-C space charge layer width modulation - Постоянная времени модуляции ширины слоя пространственного заряда базы и Б-К - - - - - - Time constant for modelling carrier jam at low VCE - Постоянная времени для моделирования запирания носителей при низком VCE + + + + + m + м - - - - - - Neutral emitter storage time - Время хранения в нейтральном эмиттере + + Width parameter + Ширина - - - - - Exponent factor for current dependence of neutral emitter storage time - Множитель в показателе степени для зависимости тока от времени хранения нейтрального эмиттера + parallel multiple device number + число параллельных моделей - - - - - Saturation time constant at high current densities - Постоянная времени насыщения при высоких плотностях тока + series multiple device number + число последовательных моделей - - - - - - Smoothing factor for current dependence of base and collector transit time - Фактор сглаживания для зависимости тока от времени пролёта базы и коллектора + + gate oxide capacitance per unit area + ёмкость затвор-окисел на единицу площади - - - - - - Partitioning factor for base and collector portion - Разделительный фактор для базовой и коллекторной частей + + F/m**2 + Ф/м**2 - - - - - Internal collector resistance at low electric field - Внутреннее сопротивление коллектора при малом электрическом поле + metallurgical junction depth + глубина технологического перехода - - - - - Voltage separating ohmic and saturation velocity regime - Напряжение разделения омического режима и режима скорости насыщения + channel width correction + коррекция ширины канала - - - - - Internal C-E saturation voltage - Внутреннее напряжение насыщения К-Э + channel length correction + коррекция длины канала - - - - - Collector punch-through voltage - Напряжение проникновения коллектора + long channel threshold voltage + пороговое напряжение длинного канала - - - - - Storage time for inverse operation - Время хранения в инверсном режиме + body effect parameter + параметр влияния подложки - - - - - - Total parasitic B-E capacitance - Полная паразитная ёмкость Б-Э + + V**(1/2) + В**(1/2) - - - - - - Total parasitic B-C capacitance - Полная паразитная ёмкость Б-К + + bulk Fermi potential + объёмный потенциал Ферми - - - - - Factor for additional delay time of minority charge - Фактор для дополнительного времени задержки неосновных носителей заряда + + + transconductance parameter + передаточная проводимость - - - - - - Factor for additional delay time of transfer current - Фактор для дополнительного времени задержки тока переноса заряда + + + A/V**2 + А/В**2 - - - - Flag for turning on and off of vertical NQS effect - Флаг для включения и выключения вертикального неквазистатического эффекта + mobility reduction coefficient + коэффициент снижения подвижности - - - - - - Flicker noise coefficient - Коэффициент 1/f-шума + + + + + + 1/V + 1/В - - - - - Flicker noise exponent factor - Показатель степени 1/f-шума + mobility coefficient + коэффициент подвижности - - - - - Flag for determining where to tag the flicker noise source - Флаг, определяющий, где поместить источник фликкер-шума + + + + V/m + В/м - - - - - - Scaling factor for collector minority charge in direction of emitter width - Масштабный множитель для коллекторных неосновных носителей в направлении ширины эмиттера + + + longitudinal critical field + продольное критическое поле - - - - - - Scaling factor for collector minority charge in direction of emitter length - Масштабный множитель для коллекторных неосновных носителей в направлении длины эмиттера + + depletion length coefficient + коэффициент длины обеднения - - - - - Bandgap voltage extrapolated to 0 K - Напряжение, экстраполированное на 0 К - - - - - - - - First order relative TC of parameter T0 - Относительный температурный коэффициент первого порядка для параметра T0 + narrow-channel effect coefficient + коэффициент влияния узкого канала - - - - - - Second order relative TC of parameter T0 - Относительный температурный коэффициент второго порядка для параметра T0 + + reverse short channel charge density + обратная плотность заряда короткого канала - - - - - - Temperature exponent for RCI0 - Температурный показатель для RCI0 + + A*s/m**2 + А*с/м**2 - - - - - Relative TC of saturation drift velocity - Относительный температурный коэффициент скорости дрейфа насыщения + characteristic length + характеристическая длина - - - - - Relative TC of VCES - Относительный температурный коэффициент VCES + threshold voltage temperature coefficient + температурный коэффициент порогового напряжения - - - - - - Temperature exponent of internal base resistance - Температурный показатель внутреннего сопротивления базы + + V/K + В/К - - - - - Temperature exponent of external base resistance - Температурный показатель внешнего сопротивления базы + mobility temperature coefficient + температурный коэффициент подвижности - - - - - Temperature exponent of external collector resistance - Температурный показатель внешнего сопротивления коллектора + Longitudinal critical field temperature exponent + Температурный показатель продольного критического поля - - - - - Temperature exponent of emitter resistance - Температурный показатель сопротивления эмиттера + Ibb temperature coefficient + температурный коэффициент Ibb - - - - - - Temperature exponent of mobility in substrate transistor transit time - Температурный показатель подвижности во времени пролёта транзистора подложки + + 1/K + 1/К - - - - Effective emitter bandgap voltage - Эффективная контактная разность потенциалов эмиттера - - - - - - - Effective collector bandgap voltage - Эффективная контактная разность потенциалов коллектора + heavily doped diffusion length + длина диффузии при сильном легировании - - - - Effective substrate bandgap voltage - Эффективная контактная разность потенциалов подложки + drain/source diffusion sheet resistance + сопротивление диффузионного слоя сток/исток - - - - - Coefficient K1 in T-dependent band-gap equation - Коэффициент K1 в зависящем от T уравнении потенциального барьера + + Ohm/square + Ом/квадрат - - - - Coefficient K2 in T-dependent band-gap equation - Коэффициент K2 в зависящем от T уравнении потенциального барьера + source contact resistance + контактное сопротивление истока - - - - - Exponent coefficient in B-E junction current temperature dependence - Коэффициент в показателе степени в температурной зависимости тока Б-Э перехода + + + + + + + + + + + + + Ohm + Ом - - - - - - Relative TC of forward current gain for V2.1 model - Относительный температурный коэффициент усиления тока в прямом режиме для модели V2.1 + + drain contact resistance + контактное сопротивление стока - - - - Flag for turning on and off self-heating effect - Флаг для включения и выключения эффекта саморазогрева + gate to source overlap capacitance + ёмкость перекрытия затвора и истока - - - - - J/W - Дж/Вт + + + + + F/m + Ф/м - - - - - Flag for compatibility with v2.1 model (0=v2.1) - Флаг для совместимости с моделью v2.1 (0=v2.1) + + gate to drain overlap capacitance + ёмкость перекрытия затвора и стока - - - - - - Temperature at which parameters are specified - Температура, при которой даются параметры модели + + gate to bulk overlap capacitance + ёмкость перекрытия затвора и подложки - - - - - Temperature change w.r.t. chip temperature for particular transistor - Изменение температуры относительно изменения температуры кристалла для определённого транзистора + first impact ionization coefficient + первый коэффициент ударной ионизации - - HICUM L2 v2.22 - HICUM L2 v2.22 + + 1/m + 1/м - - HICUM Level 0 v1.2 verilog device - verilog-модель HICUM Level 0 v1.2 + + second impact ionization coefficient + второй коэффициент ударной ионизации - - - - reverse Early voltage (normalization volt.) - напряжение Эрли в обратном направлении (напр. нормализации) + + saturation voltage factor for impact ionization + фактор напряжения насыщения для ударной ионизации - - - flag for turning on base related critical current - флаг для включения критического тока для базы + area related theshold voltage mismatch parameter + параметр несоответствия порогового напряжения, связанный с поверхностью - - - - Smoothing factor for the d.c. injection width - Коэффициент сглаживания для ширины инжекции при постоянном токе + + V*m + В*м - - - - BE charge built-in voltage for d.c. transfer current - Потенциал заряда перехода БЗ для постояного тока переноса заряда + + area related gain mismatch parameter + параметр несоответствия усиления, связанный с поверхностью - - - charge BE exponent factor for d.c. transfer current - показатель степени БЭ-заряда для постояного тока переноса заряда + area related body effect mismatch parameter + параметр несоответствия эффекта подложки, связанный с поверхностью - - - - BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current - Отношение ёмкости БЭ (максимальной к значению при нулевом смещении) для постоянного тока переноса заряда + + sqrt(V)*m + sqrt(В)*м - - - TC of iqf - Температурный коэффициент iqf + + + + + + + + + + + A + А + + + + + + - - - Exponent factor for temperature dependent thermal resistance - Множитель в показателе степени для зависимости теплового сопротивления от температуры + F + Ф - - npn HICUM L0 v1.2 - npn HICUM L0 v1.2 + + + diode relative area + относительная площадь диода - pnp HICUM L0 v1.2 - pnp HICUM L0 v1.2 + charge partition parameter + параметр разделения заряда - - HICUM Level 0 v1.2g verilog device - verilog-модель HICUM Level 0 v1.2g + + + + + + + + parameter measurement temperature + температура, при которой измерены параметры модели - - high-injection roll-off current - ток спада при сильной инжекции + + + + + + + + Celsius + °C - - TC of iqf (bandgap coefficient of zero bias hole charge) - + + EPFL-EKV NMOS 2.6 + nМОП EPFL-EKV 2.6 - - TC of avalanche prefactor, identical to alfav of Hicum/L2 - ТК лавинного предмножителя, идентичен alfav из Hicum/L2 + + EPFL-EKV PMOS 2.6 + pМОП EPFL-EKV 2.6 - - TC of avalanche exponential factor, identical to alqav of Hicum/L2 - ТК лавинного коэффициента, идентичен alqav из Hicum/L2 + + equation defined device + модель, заданная уравнением - - Emitter part coefficient of the zero bias hole charge temperature variation - + + type of equations + тип уравнений - Collector part coefficient of the zero bias hole charge temperature variation - + number of branches + число ветвей - - Bandgap TC parameter of ver - + + + current equation + уравнение тока - - Bandgap TC parameter of vef - + + + charge equation + уравнение заряда - - Specific recombination current at the BC barrier for high forward injection - + + Equation Defined Device + Модель, заданная уравнением - - npn HICUM L0 v1.2g - npn HICUM L0 v1.2g + + equation + уравнение - - pnp HICUM L0 v1.2g - pnp HICUM L0 v1.2g + + + + Equation + Уравнение - - HICUM Level 0 v1.3 verilog device - verilog-модель HICUM Level 0 v1.3 + + put result into dataset + поместить результат в набор данных - - Flag for using third order solution for transfer current + + externally driven transient simulation - - bias dependence for reverse Early voltage - зависимость смещения для обратного напряжения Эрли + + + integration method + метод интегрирования - - Flag for turning temperature dependence of tef0 on and off - + + + order of integration method + порядок метода интегрирования - TC of Reverse Early voltage - ТК обратного напряжения Эрли + + initial step size in seconds + начальный размер шага в секундах - TC of AVER - Температурный коэффициент AVER + + minimum step size in seconds + минимальный размер шага в секундах - - Bandgap difference between base and BE-junction - Разность базы и перехода база-эмиттер стабилитрона с напряжением запрещённой зоны + + + relative tolerance of local truncation error + относительный допуск на локальные ошибки усечения - Frist-order TC of iqfh - ТК первого порядка для iqfh - - - - Second-order TC of iqfh - ТК второго порядка для iqfh + + absolute tolerance of local truncation error + абсолютный допуск на локальные ошибки усечения - - npn HICUM L0 v1.3 - npn HICUM L0 v1.3 + + + overestimation of local truncation error + верхний предел переоценки ошибок усечения - - pnp HICUM L0 v1.3 - pnp HICUM L0 v1.3 + + + relax time step raster + допустимые неточности шагов по времени - - HICUM Level 2 v2.1 verilog device - verilog-модель HICUM Level 2 v2.1 + + + perform an initial DC analysis + выполнить начальный анализ на постоянном токе - - Partitioning factor of parasitic B-C capacitance - Разделительный фактор паразитной ёмкости Б-К + + + maximum step size in seconds + максимальный размер шага в секундах - - Noise factor for internal base resistance - Коэффициент шума внутреннего сопротивления базы + + External transient simulation + Внешнее моделирование переходного процесса - - HICUM L2 v2.1 - HICUM L2 v2.1 + + 1bit full adder verilog device + verilog-модель 1-битного полного сумматора - - HICUM Level 2 v2.23 verilog device - verilog-модель HICUM Level 2 v2.23 + + 1Bit FullAdder + 1-битный полный сумматор - - HICUM L2 v2.23 - HICUM L2 v2.23 + + 2bit full adder verilog device + verilog-модель 2-битного полного сумматора - - HICUM Level 2 v2.24 verilog device - verilog-модель HICUM Level 2 v2.24 + + 2Bit FullAdder + 2-битный полный сумматор - - HICUM L2 v2.24 - HICUM L2 v2.24 + + gated D latch verilog device + verilog-модель управляемой D-защёлки - - hicumL2V2p31n verilog device - verilog-модель hicumL2V2p31n + + Gated D-Latch + Управляемая D-защёлка - - Weight factor for the low current minority charge - + + 4bit Gray to binary converter verilog device + verilog-модель преобразователя 4-битного кода Грея в двоичный - - Parameter describing the slope of hjEi(VBE) + + 4Bit Gray2Bin - - Smoothing parameter for hjEi(VBE) at high voltage - Сглаживающий параметр для hjEi(VBE) при высоком напряжении - - - - Time constant for modeling carrier jam at low VCE - Постоянная времени для моделирования запирания носителей при низком VCE + + ground (reference potential) + земля (опорный потенциал) - Barrier voltage - Барьер напряжения - - - - Normalization parameter - Параметр нормализации - - - - Smoothing parameter for barrier voltage - Сглаживающий параметр для барьера напряжения - - - - fitting factor for critical current - - - - - Flag for turning on and off of correlated noise implementation - + Ground + Земля - - Emitter resistance flicker noise coefficient - + + gyrator (impedance inverter) + гиратор (преобразователь полного сопротивления) - - Emitter resistance flicker noise exponent factor - + + gyrator ratio + коэффициент гирации - - Bandgap difference between B and B-E junction used for hjEi0 and hf0 - + + Gyrator + Гиратор - - Temperature coefficient for ahjEi - Температурный коэффициент для ahjEi + + 1bit half adder verilog device + verilog-модель 1-битного полусумматора - - Temperature coefficient for hjEi0 - Температурный коэффициент для hjEi0 + + 1Bit HalfAdder + 1-битный полусумматор - - Temperature coefficient for Rth - Температурный коэффициент для Rth + + Harmonic balance simulation + Моделирование гармонического баланса - - First order relative TC of parameter Rth - Относительный температурный коэффициент первого порядка для параметра Rth + + number of harmonics + число гармоник - - HICUM L2 V2.31 - HICUM L2 V2.31 + + Harmonic balance + Гармонический баланс @@ -12106,7 +7801,7 @@ Wrong 'component' line format! - + ERROR: No file name in SPICE component "%1". ОШИБКА: Нет имени файла в компоненте SPICE "%1". @@ -12529,11 +8224,15 @@ Wrong 'component' line format! Источник тока, управляемый напряжением - voltage controlled voltage source источник напряжения, управляемый напряжением + + + voltage controlled resistor + + resistance gain @@ -12568,7 +8267,7 @@ Wrong 'component' line format! - + ERROR: No file name in %1 component "%2". ОШИБКА: Нет имени файла в %1 компоненте "%2". @@ -12731,7 +8430,7 @@ Wrong 'component' line format! <неправильно> - + invalid неправильно @@ -12843,7 +8542,7 @@ Wrong 'component' line format! Ошибка запуска Inkscape! - + Successfully exported Успешно экспортировано @@ -12867,8 +8566,8 @@ Use PNG, JPEG or SVG graphics! - - + + verilog-a user devices @@ -12927,14 +8626,14 @@ Use PNG, JPEG or SVG graphics! - + diagrams диаграммы - + paintings рисунки @@ -13054,16 +8753,16 @@ Set the Octave location on the application settings. - + - + untitled без названия - + Format Error: 'Painting' field is not closed! @@ -13240,17 +8939,17 @@ Unknown field! ОШИБКА: Не удаётся загрузить подсхему "%1". - + WARNING: Skipping library component "%1". ПРЕДУПРЕЖДЕНИЕ: Пропускается библиотечный компонент "%1". - - ERROR: Cannot load library component "%1". - ОШИБКА: Не удаётся загрузить библиотечный компонент "%1". + + ERROR: "%1": Cannot load library component "%2" from "%3" + - + WARNING: Ignore simulation component in subcircuit "%1". ПРЕДУПРЕЖДЕНИЕ: Моделируемый компонент в подсхеме "%1" будет игнорироваться. @@ -13260,7 +8959,7 @@ Unknown field! - + ERROR: Only one digital simulation allowed. ОШИБКА: Разрешается только одно цифровое моделирование. @@ -13389,11 +9088,17 @@ a substrate with lower permittivity and larger height. Cannot save settings file ! Невозможно сохранить файл настроек! + + + Quarter wave filters do not allow low-pass nor high-pass masks + + + QucsActiveFilter - + &File &Файл @@ -13403,7 +9108,29 @@ a substrate with lower permittivity and larger height. &Выйти - + + &View + &Вид + + + + &Console + + + + + Enables/disables the filter calculation console + + + + + Console + +Enables/disables the filter calculation console + + + + &Help &Справка @@ -13423,30 +9150,30 @@ a substrate with lower permittivity and larger height. О Qt... - - + + Passband attenuation, Ap (dB) Затухание в полосе пропускания, Ap (дБ) - + Stopband attenuation, As (dB) Затухание в полосе задерживания, As (дБ) - - Cuttof frequency, Fc (Hz) - Частота среза, Fc (Гц) + + Cutoff frequency, Fc (Hz) + - - + + Stopband frequency, Fs (Hz) Частота полосы задерживания, Fs (Гц) - + Passband ripple Rp(dB) Пульсация в полосе пропускания, Rp (дБ) @@ -13456,7 +9183,7 @@ a substrate with lower permittivity and larger height. Усиление в полосе пропускания, Kv (дБ) - + Filter order Порядок фильтров @@ -13486,32 +9213,71 @@ a substrate with lower permittivity and larger height. Кауэр (эллиптический) - - Bessel - Бессель + + Bessel + Бессель + + + + User defined + Определено пользователем + + + + Manually define transfer function + Вручную определить передаточную функцию + + + + Calculate and copy to clipboard + Рассчитать и скопировать в буфер обмена + + + + Low Pass + + + + + General filter amplitude-frequency response + + + + + + + Unable to implement filter with such parameters and topology +Change parameters and/or topology and try again! + + + + + + Filter calculation was successful + - - User defined - Определено пользователем + + Filter calculation terminated with error! + - - Manually define transfer function - Вручную определить передаточную функцию + + Filter calculation terminated with error + - - Calculate and copy to clipboard - Рассчитать и скопировать в буфер обмена + + Lower cutoff frequency, Fl (Hz) + - - Calculation console - Результаты расчётов + + Copyright (C) 2014, 2015 by + Copyright (C) 2005, 2006 {2014, 2015 ?} - + Filter topology Схемотехника фильтра @@ -13521,12 +9287,7 @@ a substrate with lower permittivity and larger height. Тип фильтра: - - LowPass - Нижних частот (ФНЧ) - - - + High Pass Верхних частот (ФВЧ) @@ -13552,63 +9313,45 @@ a substrate with lower permittivity and larger height. - + Cauer section Звено фильтра Кауэра - - General amplitude frequency response - - - - - Filter topology preview (one stage) - Просмотр схемы звена фильтра (1 этап) - - - + Filter parameters Параметры фильтра - + Transfer function and Topology Передаточная функция и схемотехника - - General filter amplidure-frequency response - - - - + Filter topology preview Просмотр схемы звена фильтра - + Filter calculation console Результаты расчётов фильтра - + + + Ready. + Готово. + + + Upper cutoff frequency of band-pass/band-stop filter is less than lower. Unable to implement such filter. Change parameters and try again. Верхняя частота среза полосового или режекторного фильтра ниже, чем нижняя. Невозможно рассчитать такой фильтр. Измените исходные данные и повторите расчёт. - - - - Unable to implement filter with such parameters and topology -Change parapeters and/or topology and try again! - Невозможно рассчитать фильтр с такими характеристиками и схемотехникой. -Измените исходные данные и повторите расчёт! - - - + Unable to use Cauer section for Chebyshev or Butterworth frequency response. Try to use another topology. Невозможно использовать звено фильтра Кауэра для фильтра Баттерворта или Чебышева. Используйте другую схемотехнику фильтра. @@ -13624,42 +9367,28 @@ frequency response. Try to use another topology. Function will be implemented in future version Функция будет реализована в следующей версии - - - -Filter calculation was sucessfull - -Расчёт фильтра завершён успешно - - - - -Filter calculation terminated with error - -Были ошибки в расчёте фильтра - Upper cutoff frequency, Fu (Hz) Верхняя частота среза Fu (Гц) - - Lower cuttoff frequency, Fl (Hz) - Нижняя частота среза, Fl (Гц) - - - + Transient bandwidth, TW (Hz) Ширина переходной области, TW (Гц) + Error! + + + + Active filter design Дизайн активного фильтра - + About... О... @@ -13673,12 +9402,7 @@ Active Filter synthesis program - - Copyright (C) 2014 by - Copyright (C) 2014 - - - + About Qt О Qt @@ -13686,7 +9410,7 @@ Active Filter synthesis program QucsApp - + Schematic Схема @@ -13702,42 +9426,42 @@ Active Filter synthesis program - + VHDL Sources Исходники VHDL - - + + Verilog Sources Исходные тексты Verilog - - + + Verilog-A Sources Исходные тексты Verilog-A - - + + Octave Scripts Скрипты Octave - + Spice Files Файлы Spice - + Any File Любой файл - + The schematic search path has been refreshed. @@ -13757,7 +9481,7 @@ Active Filter synthesis program Схемы - + New Создать @@ -13842,13 +9566,13 @@ Active Filter synthesis program - + - + @@ -13871,7 +9595,7 @@ Active Filter synthesis program Ошибка - + Cannot open "%1". Не удаётся открыть "%1". @@ -13883,8 +9607,16 @@ Active Filter synthesis program Библиотека повреждена! - - + + + + + Search results + + + + + @@ -13903,14 +9635,19 @@ Active Filter synthesis program Информация - + Default icon not found: %1.png Значок по умолчанию не найден: %1.png - + + verilog-a user devices + пользовательские модели verilog-a + + + -port -портовый @@ -13921,14 +9658,14 @@ Active Filter synthesis program - + The document contains unsaved changes! В документе есть несохранённые изменения! - + Do you want to save the changes before copying? Хотите сохранить изменения перед копированием? @@ -13939,13 +9676,13 @@ Active Filter synthesis program - + &Save &Сохранить - + Copy file Копировать файл @@ -13979,31 +9716,31 @@ Active Filter synthesis program - + Warning Предупреждение - + This will delete the file permanently! Continue ? Это безвозвратно удалит файл! Продолжить ? - + No Нет - + - + Yes Да - + unknown неизвестный @@ -14164,7 +9901,7 @@ Active Filter synthesis program - + @@ -14178,7 +9915,7 @@ Active Filter synthesis program Готово. - + Creating new text editor... Создание нового текстового редактора... @@ -14243,12 +9980,12 @@ Active Filter synthesis program - + Cancel Отменить - + Cannot overwrite an open document Не удаётся перезаписать открытый документ @@ -14263,7 +10000,7 @@ Active Filter synthesis program Сохранение всех файлов... - + Closing file... Закрытие файла... @@ -14287,18 +10024,6 @@ Active Filter synthesis program Open examples directory... Отрыть каталог с примерами - - Update schematic path - Обновить путь к схеме - - - The schematic file path has been refreshed. - Путь к файлу схемы был обновлён. - - - OK - OK - Printing... @@ -15108,10 +10833,6 @@ Searches for a piece of text Поиск текста - - Export as image - Сохранить как изображение - Export as image... @@ -16276,130 +11997,6 @@ About Qt by Trolltech Warnings in last simulation! Press F5 Предупреждения в последнем моделировании! Нажмите F5 - - About... - О... - - - Qucs Version - Версия Qucs - - - Quite Universal Circuit Simulator - Почти универсальный симулятор цепей - - - Copyright (C) - Copyright (C) - - - by Michael Margraf - Michael Margraf - - - Qucs Team - Команда Qucs - - - Simulator by Stefan Jahn - Симулятор Штефана Яна (Stefan Jahn) - - - VHDL simulator 'FreeHDL' by Edwin Naroska and Marius Vollmer - VHDL симулятор 'FreeHDL' Эдвина Нароска (Edwin Naroska) и Мариуса Вольмера (Marius Vollmer) - - - Special thanks to Jens Flucke and Raimund Jacob - Особая благодарность Йенсу Флюкке (Jens Flucke) и Раймунду Джакобу (Raimund Jacob) - - - Many thanks to Mike Brinson for correcting the VHDL output - Большая благодарность Майку Бринсону (Mike Brinson) за внесение поправок в результаты VHDL - - - GUI improvements by Gopala Krishna A - Переделка графического интерфейса - Gopala Krishna A - - - Verilog-AMS interface by Helene Parruitte - Интерфейс с Verilog-AMS: Helene Parruitte - - - Verilog-AMS dynamic loader by Guilherme Brondani Torri - Динамический загрузчик Verilog-AMS от Guilherme Brondani Torri - - - Translations: - Перевод: - - - German by Stefan Jahn - Немецкий - Stefan Jahn - - - Polish by Dariusz Pienkowski - Польский - Dariusz Pienkowski - - - Romanian by Radu Circa - Румынский - Radu Circa - - - French by Vincent Habchi, F5RCS - Французский - Vincent Habchi, F5RCS - - - Portuguese by Luciano Franca, Helio de Sousa, Guilherme Brondani Torri - Португальский - Luciano Franca, Helio de Sousa, Guilherme Brondani Torri - - - Spanish by Jose L. Redrejo Rodriguez - Испанский - Jose L. Redrejo Rodriguez - - - Japanese by Toyoyuki Ishikawa - Японский - Toyoyuki Ishikawa - - - Italian by Giorgio Luparia and Claudio Girardi - Итальянский - Giorgio Luparia и Claudio Girardi - - - Hebrew by Dotan Nahum - Еврейский - Dotan Nahum - - - Swedish by Peter Landgren - Шведский - Peter Landgren - - - Turkish by Onur and Ozgur Cobanoglu - Турецкий - Onur и Ozgur Cobanoglu - - - Hungarian by Jozsef Bus - Венгерский - Jozsef Bus - - - Russian by Igor Gorbounov - Русский - Игорь Горбунов - - - Czech by Marek Straka - Чешский - Marek Straka - - - Catalan by Antoni Subirats - Каталанский - Antoni Subirats - - - Arabic by Chabane Noureddine - Арабский - Chabane Noureddine - - - Kazakh by Erbol Keshubaev - Казахский - Erbol Keshubaev - QucsAttenuator @@ -16670,7 +12267,7 @@ Very simple text editor for Qucs QucsFilter - + &File &Файл @@ -16710,7 +12307,7 @@ Very simple text editor for Qucs Реализация: - + Filter type: Тип фильтра: @@ -16746,29 +12343,29 @@ Very simple text editor for Qucs - + Corner frequency: Частота среза: - + Stop frequency: Конечная частота: - + Stop band frequency: Частота режекторного фильтра: - - + + Pass band ripple: Пульсации в полосе: - + Stop band attenuation: Подавление режекторного фильтра: @@ -16838,19 +12435,19 @@ Filter synthesis program - + Result: Результат: - + Error Ошибка - + Stop frequency must be greater than start frequency. Конечная частота должна быть выше начальной. @@ -17007,17 +12604,22 @@ Enables/disables the table of contents О программе - + Component Selection Выбор компонента - - Search... - Поиск... + + Search Lib Components + - + + Clear + Очистить + + + Component Компонент @@ -17032,7 +12634,7 @@ Enables/disables the table of contents Показать модель - + About... О... @@ -17043,6 +12645,12 @@ Enables/disables the table of contents Менеджер библиотек для Qucs + + + Copyright (C) 2011-2015 Qucs Team + + + Copyright (C) 2005 by Michael Margraf @@ -17052,7 +12660,7 @@ Enables/disables the table of contents - + QucsLib Help Справка по библиотекам Qucs @@ -17072,14 +12680,17 @@ Enables/disables the table of contents Модель - - Search result - Результат поиска + + + + + Search results + - + - + @@ -17088,13 +12699,13 @@ Enables/disables the table of contents Ошибка - + Cannot open "%1". Не удаётся открыть "%1". - + @@ -17102,21 +12713,6 @@ Enables/disables the table of contents Library is corrupt. Библиотека повреждена. - - - Search Library Component - Поиск библиотечного компонента - - - - Result - Результат - - - - No appropriate component found. - Соответствующий компонент не найден. - QucsSettingsDialog @@ -18135,7 +13731,7 @@ Edits the symbol for this schematic обобщённый - + Error Ошибка @@ -18155,7 +13751,7 @@ Set the admsXml location on the application settings. Статус - + ERROR: Cannot create library file "%s". ОШИБКА: Не удаётся создать библиотечный файл "%s". @@ -18164,83 +13760,46 @@ Set the admsXml location on the application settings. SearchDialog - - - - Dialog Диалог - - - - Text to search for Найти - - - - Text to replace with Заменить на - - - - Ask before replacing Спрашивать перед заменой - - - - Case sensitive Учитывать регистр - - - - Whole words only Только полные слова - - - - Search backwards Обратный поиск - - - - Next Следующий - - - - - Close Закрыть @@ -18254,31 +13813,6 @@ Set the admsXml location on the application settings. Search Text Найти текст - - - The search result contains all components whose -name contains the search string. All libraries -are included in the search. - Результаты поиска содержат все компоненты, -в именах которых присутствует строка поиска. -Все библиотеки включены в поиск. - - - - Search string: - Строка поиска: - - - - Search - Поиск - - - - - Search result - Результат поиска - SettingsDialog @@ -18561,12 +14095,6 @@ are included in the search. Simulation aborted by the user! - - Errors: -------- - Ошибки: -------- - SpiceDialog @@ -18729,7 +14257,7 @@ are included in the search. SymbolWidget - + Symbol: Обозначение: @@ -18738,6 +14266,13 @@ are included in the search. ! Drag n'Drop me ! ! Перетащи меня ! + + + Warning: Symbol '%1' missing in Qucs Library. +Drag and Drop may still work. +Please contact the developers. + + TextDoc diff --git a/qucs/translations/qucs_sv.ts b/qucs/translations/qucs_sv.ts index fd4c2d4bff..d3fbf46fb4 100644 --- a/qucs/translations/qucs_sv.ts +++ b/qucs/translations/qucs_sv.ts @@ -1134,10 +1134,6 @@ Cancel Avbryt - - File - Fil - Width in pixels @@ -3533,62 +3529,6 @@ Resistor color code computation program - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - @@ -3744,10 +3684,6 @@ Resistor color code computation program - - - - polarity @@ -3952,10 +3888,6 @@ Resistor color code computation program - - - - @@ -4096,5710 +4028,1481 @@ Resistor color code computation program - - bsim3v34nMOS verilog device + + + + + + + + + + + simulation temperature + + + capacitor + kondensator + + capacitance in Farad + kapacitans i F + + + initial voltage for transient simulation + + + + + + + + + schematic symbol + schemasymbol + + + + Capacitor + Kondensator + + + + current controlled current source + strömstyrd strömkälla + + + + + + forward transfer factor + + + + + + + + + + + + + + + + delay time + fördröjningstid + + + + Current Controlled Current Source + Strömstrýrd strömkälla + + + + current controlled voltage source + strömstyrd spänningskälla + + + + Current Controlled Voltage Source + Strömstyrd spänningskälla + + + + circulator + cirkulator + + + + reference impedance of port 1 + referensimpedans i port 1 + + + reference impedance of port 2 + referensimpedans i port 2 + + + reference impedance of port 3 + referensimpedans i port 3 + + + + Circulator + Cirkulator + + + + coaxial transmission line + koaxioaltransmissionslinje + + + + + relative permittivity of dielectric + dielektrikats relativa permittivitet + + + + + specific resistance of conductor + specifika resistans hos ledare + + + + + relative permeability of conductor + + + + inner diameter of shield + skärmens innerdiameter + + + diameter of inner conductor + diameter hos innerledrare + + + + mechanical length of the line + mekanisk längd på linjen + + + + + + loss tangent + förlusttangent + + + + Coaxial Line + Koaxialledning + + + + 1bit comparator verilog device + + + + + 1Bit Comparator + + + + + 2bit comparator verilog device + + + + + 2Bit Comparator + + + + + 4bit comparator verilog device + + + + + 4Bit Comparator + + + + + number of input ports + antal ingångsportar + + - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - simulation temperature - - - - - bsim3v34nMOS - - - - - bsim3v34pMOS verilog device - - - - - bsim3v34pMOS - - - - - bsim4v30nMOS verilog device - - - - - bsim4v30nMOS - - - - - bsim4v30pMOS verilog device - - - - - bsim4v30pMOS - - - - - capacitor - kondensator - - - - capacitance in Farad - kapacitans i F - - - - initial voltage for transient simulation - - - - - - - - - - schematic symbol - schemasymbol - - - - Capacitor - Kondensator - - - - current controlled current source - strömstyrd strömkälla - - - - - - forward transfer factor - - - - - - - - - - - - - - - - delay time - fördröjningstid - - - - Current Controlled Current Source - Strömstrýrd strömkälla - - - - current controlled voltage source - strömstyrd spänningskälla - - - - Current Controlled Voltage Source - Strömstyrd spänningskälla - - - - circulator - cirkulator - - - - reference impedance of port 1 - referensimpedans i port 1 - - - - reference impedance of port 2 - referensimpedans i port 2 - - - - reference impedance of port 3 - referensimpedans i port 3 - - - - Circulator - Cirkulator - - - - coaxial transmission line - koaxioaltransmissionslinje - - - - - relative permittivity of dielectric - dielektrikats relativa permittivitet - - - - - - specific resistance of conductor - specifika resistans hos ledare - - - - - - relative permeability of conductor - - - - - inner diameter of shield - skärmens innerdiameter - - - - diameter of inner conductor - diameter hos innerledrare - - - - - mechanical length of the line - mekanisk längd på linjen - - - - - - - loss tangent - förlusttangent - - - - Coaxial Line - Koaxialledning - - - - 1bit comparator verilog device - - - - - 1Bit Comparator - - - - - 2bit comparator verilog device - - - - - 2Bit Comparator - - - - - 4bit comparator verilog device - - - - - 4Bit Comparator - - - - - number of input ports - antal ingångsportar - - - - - - - voltage of high level - spänning av hög nivå - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Error - Fel - - - - Format Error: -Wrong line start! - Formatfel: -Felaktig början på rad! - - - - Format Error: -Unknown component! -%1 - -Do you make use of loadable components? - - - - - Format Error: -Wrong 'component' line format! - Formatfel: -Felaktigt komponentsradsformat! - - - - coplanar line - - - - - - - - - - - - - - - name of substrate definition - namn på substratdefinition - - - - - - - - - - - width of the line - bredd på ledningen - - - - - - - width of a gap - bredd på ett gap - - - - - - - length of the line - längd på ledningen - - - - - - - material at the backside of the substrate - material på baksidan av substratet - - - - use approximation instead of precise equation - använd approximation i stället för exakt ekvation - - - - Coplanar Line - - - - - ideal coupler - - - - - coupling factor - - - - - phase shift of coupling path in degree - - - - - Coupler - - - - - coplanar gap - - - - - width of gap between the two lines - bredd på gapet mellan två ledningar - - - - Coplanar Gap - - - - - coplanar open - - - - - width of gap at end of line - bredd på gap vid slutet på ledningen - - - - Coplanar Open - - - - - coplanar short - - - - - Coplanar Short - - - - - coplanar step - - - - - - - width of line 1 - bredd på ledning 1 - - - - - - width of line 2 - bredd på ledning 2 - - - - distance between ground planes - avstånd mellan jordplanen - - - - Coplanar Step - - - - - coupled transmission lines - - - - - characteristic impedance of even mode - - - - - characteristic impedance of odd mode - - - - - - - - electrical length of the line - ledningens elektriska längd - - - - relative dielectric constant of even mode - - - - - relative dielectric constant of odd mode - - - - - attenuation factor per length of even mode - - - - - attenuation factor per length of odd mode - - - - - Coupled Transmission Line - - - - - D flip flop with asynchron reset - - - - - D-FlipFlop - - - - - - dc simulation - dc-simulering - - - - - - - relative tolerance for convergence - relativ tolerans för konvergens - - - - - - - absolute tolerance for currents - absolut tolerans för strömmar - - - - - - - absolute tolerance for voltages - absolut tolerans för spänningar - - - - put operating points into dataset - skriv driftpunkter till datamängden - - - - - - - maximum number of iterations until error - maximalt antal iterationer tills fel - - - - save subcircuit nodes into dataset - spara delkretsnoder i datamängden - - - - preferred convergence algorithm - föredragen konvergeringsalgoritm - - - - - - method for solving the circuit matrix - metod för att lösa en kretsmatris - - - - dc block - dc-blockering - - - - dc Block - dc-blockering - - - - dc feed - dc-matning - - - - dc Feed - dc-matning - - - - D flip flop with set and reset verilog device - - - - - - - - cross coupled gate transfer function high scaling factor - - - - - - - - cross coupled gate transfer function low scaling factor - - - - - - - - cross coupled gate delay - - - - - D-FlipFlop w/ SR - - - - - diac (bidirectional trigger diode) - - - - - - (bidirectional) breakover voltage - - - - - (bidirectional) breakover current - - - - - - - parasitic capacitance - - - - - - - - - emission coefficient - emissionskoefficient - - - - - - intrinsic junction resistance - - - - - Diac - - - - - - digital simulation - digital simulering - - - - type of simulation - typ av simulering - - - - duration of TimeList simulation - - - - - netlist format - - - - - - digital source - digital källa - - - - - number of the port - portens nummer - - - - initial output value - initialt utdatavärde - - - - list of times for changing output value - lista på tider för att byta utdatavärde - - - - diode - diod - - - - - - zero-bias junction capacitance - - - - - - - - - grading coefficient - - - - - - - - junction potential - övergångspotential - - - - linear capacitance - linjär kapacitans - - - - recombination current parameter - rekombinationsströmsparametar - - - - emission coefficient for Isr - emissionskoefficient för lsr - - - - ohmic series resistance - ohmsk serieresistans - - - - - - transit time - löptid - - - - high-injection knee current (0=infinity) - - - - - - - reverse breakdown voltage - omvänd överslagsspänning - - - - - - current at reverse breakdown voltage - ström vid omvänd överslagsspänning - - - - Bv linear temperature coefficient - Bv linjär temperaturkoefficient - - - - Rs linear temperature coefficient - Rs linjär temperaturkoefficient - - - - Tt linear temperature coefficient - Tt linjär temperaturkoefficient - - - - Tt quadratic temperature coefficient - Tt kvadratisk temperaturkoefficient - - - - M linear temperature coefficient - M linjär temperaturkoefficient - - - - M quadratic temperature coefficient - M kvadratisk temperaturkoefficient - - - - - default area for diode - standardyta för diod - - - - Diode - Diod - - - - data voltage level shifter (digital to analogue) verilog device - - - - - - voltage level - - - - - - time delay - - - - - D2A Level Shifter - - - - - data voltage level shifter (analogue to digital) verilog device - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - V - - - - - A2D Level Shifter - - - - - 2to4 demultiplexer verilog device - - - - - 2to4 Demux - - - - - 3to8 demultiplexer verilog device - - - - - 3to8 Demux - - - - - 4to16 demultiplexer verilog device - - - - - 4to16 Demux - - - - - externally controlled voltage source - - - - - - voltage in Volts - spänning i V - - - - Externally Controlled Voltage Source - - - - - EPFL-EKV MOS 2.6 verilog device - - - - - long = 1, short = 2 - - - - - length parameter - - - - - - - - - - - - - m - - - - - Width parameter - - - - - parallel multiple device number - - - - - series multiple device number - - - - - gate oxide capacitance per unit area - - - - - F/m**2 - - - - - metallurgical junction depth - - - - - channel width correction - - - - - channel length correction - - - - - long channel threshold voltage - - - - - body effect parameter - - - - - V**(1/2) - - - - - bulk Fermi potential - - - - - - - transconductance parameter - transkonduktansparameter - - - - - A/V**2 - - - - - mobility reduction coefficient - - - - - - - - - - - - - 1/V - - - - - mobility coefficient - - - - - - - V/m - - - - - - longitudinal critical field - - - - - depletion length coefficient - - - - - narrow-channel effect coefficient - - - - - reverse short channel charge density - - - - - A*s/m**2 - - - - - characteristic length - - - - - threshold voltage temperature coefficient - - - - - - - - - - - - - V/K - - - - - mobility temperature coefficient - - - - - Longitudinal critical field temperature exponent - - - - - Ibb temperature coefficient - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1/K - - - - - heavily doped diffusion length - - - - - drain/source diffusion sheet resistance - - - - - Ohm/square - - - - - source contact resistance - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Ohm - - - - - drain contact resistance - - - - - gate to source overlap capacitance - - - - - - - - F/m - - - - - gate to drain overlap capacitance - - - - - gate to bulk overlap capacitance - - - - - first impact ionization coefficient - - - - - 1/m - - - - - second impact ionization coefficient - - - - - saturation voltage factor for impact ionization - - - - - area related theshold voltage mismatch parameter - - - - - V*m - - - - - area related gain mismatch parameter - - - - - area related body effect mismatch parameter - - - - - sqrt(V)*m - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - F - - - - - - diode relative area - - - - - charge partition parameter - - - - - - - - - - - parameter measurement temperature - parametermätningstemperatur - - - - - - - - - - Celsius - - - - - EPFL-EKV NMOS 2.6 - - - - - EPFL-EKV PMOS 2.6 - - - - - equation defined device - - - - - type of equations - - - - - number of branches - - - - - - current equation - - - - - - charge equation - - - - - Equation Defined Device - - - - - equation - ekvation - - - - - - Equation - Ekvation - - - - put result into dataset - skriv resultat till datamängden - - - - externally driven transient simulation - - - - - - integration method - integrationsmetod - - - - - order of integration method - integrationsmetodens ordning - - - - - initial step size in seconds - initialt tidssteg i sekunder - - - - - minimum step size in seconds - minsta stegstorlek i sekunder - - - - - relative tolerance of local truncation error - relative tolerans hos lokalt avrundningsfel - - - - - absolute tolerance of local truncation error - absolut tolerans hos lokalt avrundningsfel - - - - - overestimation of local truncation error - överskattning av lokalt avrundningsfel - - - - - relax time step raster - - - - - - perform an initial DC analysis - - - - - - maximum step size in seconds - - - - - External transient simulation - - - - - 1bit full adder verilog device - - - - - 1Bit FullAdder - - - - - 2bit full adder verilog device - - - - - 2Bit FullAdder - - - - - gated D latch verilog device - - - - - Gated D-Latch - - - - - 4bit Gray to binary converter verilog device - - - - - 4Bit Gray2Bin - - - - - ground (reference potential) - jord (referenspotential) - - - - Ground - Jord - - - - gyrator (impedance inverter) - gyrator (impedansinverterare) - - - - gyrator ratio - gyratorförhållande - - - - Gyrator - Gyrator - - - - 1bit half adder verilog device - - - - - 1Bit HalfAdder - - - - - Harmonic balance simulation - - - - - number of harmonics - antal övertoner - - - - Harmonic balance - Övertonsbalans - - - - HBT model by Ferdinand-Braun-Institut (FBH), Berlin - - - - - - - - Ignored - - - - - Device operating temperature, Celsius - - - - - Thermal resistance, K/W - - - - - - - - - - - - - - Thermal capacitance - - - - - Scaling factor, number of emitter fingers - - - - - Length of emitter finger, m - - - - - Width of emitter finger, m - - - - - Forward saturation current density, A/um^2 - - - - - Forward current emission coefficient - - - - - Forward thermal activation energy, V, (0 == disables temperature dependence) - - - - - B-E leakage saturation current density, A/um^2 - - - - - B-E leakage emission coefficient - - - - - Limiting resistor of B-E leakage diode, Ohm - - - - - B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - 2nd B-E leakage saturation current density, A/um^2 - - - - - 2nd B-E leakage emission coefficient - - - - - 2nd Limiting resistor of B-E leakage diode, Ohm - - - - - 2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Reverse saturation current density, A/um^2 - - - - - Reverse current emission coefficient - - - - - Reverse thermal activation energy, V, (0 == disables temperature dependence) - - - - - Fraction of Cjc that goes to internal base node - - - - - B-C leakage saturation current density, A/um^2 (0. switches off diode) - - - - - B-C leakage emission coefficient (0. switches off diode) - - - - - Limiting resistor of B-C leakage diode, Ohm - - - - - B-C leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Ideal forward beta - - - - - Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence) - - - - - Ideal reverse beta - - - - - Forward Early voltage, V, (0 == disables Early Effect) - - - - - Reverse Early voltage, V, (0 == disables Early Effect) - - - - - Forward high-injection knee current, A, (0 == disables Webster Effect) - - - - - Reverse high-injection knee current, A, (0 == disables Webster Effect) - - - - - C-E breakdown exponent, (0 == disables collector break-down) - - - - - C-E breakdown voltage, V, (0 == disables collector break-down) - - - - - C-E breakdown factor, (0 == disables collector break-down) - - - - - B-E breakdown voltage, V, (0 == disables emitter break-down) - - - - - Ideal reverse transit time, s - - - - - Extrinsic BC diffusion capacitance, F - - - - - Ideal forward transit time, s - - - - - Temperature coefficient of forward transit time - - - - - Excess transit time coefficient at base push-out - - - - - Smoothing parameter for Thcs - - - - - B-E zero-bias depletion capacitance, F/um^2 - - - - - B-E junction exponential factor - - - - - B-E junction built-in potential, V - - - - - B-C zero-bias depletion capacitance, F/um^2 - - - - - B-C junction exponential factor - - - - - B-C junction built-in potential, V - - - - - not used - - - - - Minimum B-C depletion capacitance (Vbc dependence), F/um^2 - - - - - Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction) - - - - - Fraction of Cmin, lower limit of BC capacitance (Ic dependence) - - - - - Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out) - - - - - Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out) - - - - - Slope of Jk at high currents , Ohm*um^2 - - - - - Voltage shift of base push-out onset, V - - - - - Collector resistance, Ohm/finger - - - - - Emitter resistance, Ohm/finger - - - - - Extrinsic base resistance, Ohm/finger - - - - - Inner Base ohmic resistance, Ohm/finger - - - - - Collector inductance, H - - - - - Emitter inductance, H - - - - - Base inductance, H - - - - - Extrinsic B-C capacitance, F - - - - - Extrinsic base capacitance, F - - - - - Extrinsic collector capacitance, F - - - - - - Flicker-noise coefficient - - - - - - Flicker-noise exponent - - - - - - Flicker-noise frequency exponent - - - - - Burst noise coefficient - - - - - Burst noise exponent - - - - - Burst noise corner frequency, Hz - - - - - Ambient temperature at which the parameters were determined - - - - - FBH HBT - - - - - HICUM Level 0 v1.12 verilog device - - - - - - - - (Modified) saturation current - - - - - - - - Non-ideality coefficient of forward collector current - - - - - - - - Non-ideality coefficient of reverse collector current - - - - - - - - - - - - - - - - forward Early voltage (normalization volt.) - - - - - - - - forward d.c. high-injection roll-off current - - - - - - - - inverse d.c. high-injection roll-off current - - - - - - - - high-injection correction current - - - - - - - high-injection correction factor - - - - - - - - BE saturation current - - - - - - - - BE non-ideality factor - - - - - - - - BE recombination saturation current - - - - - - - - BE recombination non-ideality factor - - - - - - - - BC saturation current - - - - - - - - BC non-ideality factor - - - - - - - - Zero-bias BE depletion capacitance - - - - - - - - BE built-in voltage - - - - - - - - BE exponent factor - - - - - - - - Ratio of maximum to zero-bias value - - - - - - - - low current transit time at Vbici=0 - - - - - - - - Base width modulation contribution - - - - - - - - SCR width modulation contribution - - - - - - - - Storage time in neutral emitter - - - - - - - - Exponent factor for emitter transit time - - - - - - - - Saturation time at high current densities - - - - - - - - Smoothing factor for current dependence - - - - - - - - Storage time at inverse operation - - - - - - - - Low-field collector resistance under emitter - - - - - - - - Voltage dividing ohmic and satur.region - - - - - - - - - - - - Punch-through voltage - - - - - - - - Saturation voltage - - - - - - - - Total zero-bias BC depletion capacitance - - - - - - - - BC built-in voltage - + + + + voltage of high level + spänning av hög nivå - - - - - BC exponent factor - + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + Error + Fel - - - - - Punch-through voltage of BC junction - + + Format Error: +Wrong line start! + Formatfel: +Felaktig början på rad! - - - - - Zero-bias external BC depletion capacitance + + Format Error: +Unknown component! +%1 + +Do you make use of loadable components? - - - - - External BC built-in voltage - + + Format Error: +Wrong 'component' line format! + Formatfel: +Felaktigt komponentsradsformat! - - - - - External BC exponent factor + + coplanar line - - - - - Split factor = Cjci0/Cjc0 - + + + + + + + + + + + + name of substrate definition + namn på substratdefinition - - - - Internal base resistance at zero-bias - - - - - - - - Geometry factor - + + + + + + + + width of the line + bredd på ledningen - - - - - - - - - External base series resistance - - - - - - - - - - - - - Emitter series resistance - - - - - - - - - - - - - External collector series resistance - - - - - - - - - - - - - Substrate transistor transfer saturation current - - - - - - - - Substrate transistor transfer current non-ideality factor - + + + + width of a gap + bredd på ett gap - - - - SC saturation current - - - - - - - - SC non-ideality factor - + + + + length of the line + längd på ledningen - - - - Zero-bias SC depletion capacitance - - - - - - - - SC built-in voltage - + + + + material at the backside of the substrate + material på baksidan av substratet - - - - External SC exponent factor - - - - - - - - SC punch-through voltage - + use approximation instead of precise equation + använd approximation i stället för exakt ekvation - - - - - Collector-base isolation (overlap) capacitance + + Coplanar Line - - - - - Emitter-base oxide capacitance + + ideal coupler - - - - - Exponent factor + + coupling factor - - - - Prefactor - - - - - - - - M^(1-AF) + phase shift of coupling path in degree - - - - - flicker noise exponent factor + + Coupler - - - - - Bandgap-voltage + + coplanar gap - - - - - Effective emitter bandgap-voltage - + + width of gap between the two lines + bredd på gapet mellan två ledningar - - - - - Effective collector bandgap-voltage + + Coplanar Gap - - - - - Effective substrate bandgap-voltage + + coplanar open - - - - - Coefficient K1 in T-dependent bandgap equation - + + width of gap at end of line + bredd på gap vid slutet på ledningen - - - - - Coefficient K2 in T-dependent bandgap equation + + Coplanar Open - - - - - Frist-order TC of tf0 + + coplanar short - - - - - Second-order TC of tf0 + + Coplanar Short - - - - - - 1/K^2 + + coplanar step - - - - - - - - - Exponent coefficient in transfer current temperature dependence - + + + + width of line 1 + bredd på ledning 1 - - - - Exponent coefficient in BE junction current temperature dependence - + + + width of line 2 + bredd på ledning 2 - - - - TC of epi-collector diffusivity - + distance between ground planes + avstånd mellan jordplanen - - - - - Relative TC of satur.drift velocity + + Coplanar Step - - - - - Relative TC of vces + + coupled transmission lines - - - - - TC of internal base resistance + + characteristic impedance of even mode - - - - TC of external base resistance + characteristic impedance of odd mode - - - - TC of external collector resistance - + + + + electrical length of the line + ledningens elektriska längd - - - - TC of emitter resistances + relative dielectric constant of even mode - - - TC of avalanche prefactor + relative dielectric constant of odd mode - - - - TC of avalanche exponential factor + + attenuation factor per length of even mode - - - - - Flag for self-heating calculation + + attenuation factor per length of odd mode - - - - - - - - - - Thermal resistance + + Coupled Transmission Line - - - - - - - - - K/W + + D flip flop with asynchron reset - - - - - Ws/K + + D-FlipFlop - - - - - Temperature for which parameters are valid - + + + dc simulation + dc-simulering - - - - - - - - - C - + + + + + relative tolerance for convergence + relativ tolerans för konvergens - - - - Temperature change for particular transistor - + + + + absolute tolerance for currents + absolut tolerans för strömmar - - - - - - - - - K - + + + + + absolute tolerance for voltages + absolut tolerans för spänningar - - npn HICUM L0 v1.12 - + + put operating points into dataset + skriv driftpunkter till datamängden - - pnp HICUM L0 v1.12 - + + + + + maximum number of iterations until error + maximalt antal iterationer tills fel - - HICUM Level 2 v2.22 verilog device - + + save subcircuit nodes into dataset + spara delkretsnoder i datamängden - - - - - GICCR constant - + preferred convergence algorithm + föredragen konvergeringsalgoritm - - - - - A^2s - + + + + method for solving the circuit matrix + metod för att lösa en kretsmatris - - - - - - Zero-bias hole charge - + + dc block + dc-blockering - - - - - - - - - Coul - + + dc Block + dc-blockering - - - - - - High-current correction for 2D and 3D effects - + + dc feed + dc-matning - - - - - - Emitter minority charge weighting factor in HBTs - + + dc Feed + dc-matning - - - - - - Collector minority charge weighting factor in HBTs + + D flip flop with set and reset verilog device - - - - - - B-E depletion charge weighting factor in HBTs + + + + + cross coupled gate transfer function high scaling factor - - - - - B-C depletion charge weighting factor in HBTs + + + + cross coupled gate transfer function low scaling factor - - - - - Internal B-E saturation current + + + + cross coupled gate delay - - - - - - Internal B-E current ideality factor + + D-FlipFlop w/ SR - - - - - - Internal B-E recombination saturation current + + diac (bidirectional trigger diode) - - - - - - Internal B-E recombination current ideality factor + + + (bidirectional) breakover voltage - - - - - Peripheral B-E saturation current - - - - - - - - - Peripheral B-E current ideality factor + (bidirectional) breakover current - - - - - Peripheral B-E recombination saturation current + + + parasitic capacitance - - - - - - Peripheral B-E recombination current ideality factor - + + + + + + emission coefficient + emissionskoefficient - - - - - Non-ideality factor for III-V HBTs + + + intrinsic junction resistance - - - - - Base current recombination time constant at B-C barrier for high forward injection + + Diac - - - - - - Internal B-C saturation current - + + + digital simulation + digital simulering - - - - - - Internal B-C current ideality factor - + + type of simulation + typ av simulering - - - - - External B-C saturation current + duration of TimeList simulation - - - - - - External B-C current ideality factor + + netlist format - - - - - - B-E tunneling saturation current - + + + digital source + digital källa - - - - - - Exponent factor for tunneling current - + + + number of the port + portens nummer - - - - Specifies the base node connection for the tunneling current - + initial output value + initialt utdatavärde - - - - - Avalanche current factor - + list of times for changing output value + lista på tider för att byta utdatavärde - - - - - - Exponent factor for avalanche current - + + diode + diod - - - - - - Relative TC for FAVL + + + + zero-bias junction capacitance - - - - - - Relative TC for QAVL + + + + + + grading coefficient - - - - - - Zero bias internal base resistance - + + + + + junction potential + övergångspotential - - - - - - Factor for geometry dependence of emitter current crowding - + + linear capacitance + linjär kapacitans - - - - - Correction factor for modulation by B-E and B-C space charge layer - + recombination current parameter + rekombinationsströmsparametar - - - - - Ratio of HF shunt to total internal capacitance (lateral NQS effect) - + emission coefficient for Isr + emissionskoefficient för lsr - - - - - Ration of internal to total minority charge - + ohmic series resistance + ohmsk serieresistans - - - - - - Forward ideality factor of substrate transfer current - + + + + transit time + löptid - - - - - C-S diode saturation current + high-injection knee current (0=infinity) - - - - - - Ideality factor of C-S diode current - + + + + reverse breakdown voltage + omvänd överslagsspänning - - - - - Transit time for forward operation of substrate transistor - - - - - - - - - Substrate series resistance - + + + current at reverse breakdown voltage + ström vid omvänd överslagsspänning - - - - - - Substrate shunt capacitance - + + Bv linear temperature coefficient + Bv linjär temperaturkoefficient - - - - - - Internal B-E zero-bias depletion capacitance - + + Rs linear temperature coefficient + Rs linjär temperaturkoefficient - - - - - - Internal B-E built-in potential - + + Tt linear temperature coefficient + Tt linjär temperaturkoefficient - - - - - - Internal B-E grading coefficient - + + Tt quadratic temperature coefficient + Tt kvadratisk temperaturkoefficient - - - - - Ratio of maximum to zero-bias value of internal B-E capacitance - + M linear temperature coefficient + M linjär temperaturkoefficient - - - - - Peripheral B-E zero-bias depletion capacitance - + M quadratic temperature coefficient + M kvadratisk temperaturkoefficient - - - - - - Peripheral B-E built-in potential - + + + default area for diode + standardyta för diod - - - - - - Peripheral B-E grading coefficient - + + Diode + Diod - - - - - - Ratio of maximum to zero-bias value of peripheral B-E capacitance + + data voltage level shifter (digital to analogue) verilog device - - - - - - Internal B-C zero-bias depletion capacitance + + + voltage level - - - - - - Internal B-C built-in potential + + + time delay - - - - - - Internal B-C grading coefficient + + D2A Level Shifter - - - - - - Internal B-C punch-through voltage + + data voltage level shifter (analogue to digital) verilog device + + + + + + + + + + + + + + + + + + + - - - - - External B-C zero-bias depletion capacitance + + + V - - - - - - External B-C built-in potential + + A2D Level Shifter - - - - - - External B-C grading coefficient + + 2to4 demultiplexer verilog device - - - - - - External B-C punch-through voltage + + 2to4 Demux - - - - - Partitioning factor of parasitic B-C cap + + 3to8 demultiplexer verilog device - - - - - Partitioning factor of parasitic B-E cap + + 3to8 Demux - - - - - - C-S zero-bias depletion capacitance + + 4to16 demultiplexer verilog device - - - - - - C-S built-in potential + + 4to16 Demux - - - - - - C-S grading coefficient + + externally controlled voltage source - - - - - - C-S punch-through voltage - + + + voltage in Volts + spänning i V - - - - - - Low current forward transit time at VBC=0V + + Externally Controlled Voltage Source - - - - - - Time constant for base and B-C space charge layer width modulation + + EPFL-EKV MOS 2.6 verilog device - - - - - Time constant for modelling carrier jam at low VCE + + long = 1, short = 2 - - - - - - Neutral emitter storage time + + length parameter + + + + - - - - - Exponent factor for current dependence of neutral emitter storage time + + + + + m - - - - - - Saturation time constant at high current densities + + Width parameter - - - - - Smoothing factor for current dependence of base and collector transit time + parallel multiple device number - - - - - Partitioning factor for base and collector portion + series multiple device number - - - - - Internal collector resistance at low electric field - - - - - - - - - Voltage separating ohmic and saturation velocity regime + gate oxide capacitance per unit area - - - - - - Internal C-E saturation voltage + + F/m**2 - - - - - - Collector punch-through voltage + + metallurgical junction depth - - - - - Storage time for inverse operation + channel width correction - - - - - Total parasitic B-E capacitance + channel length correction - - - - - Total parasitic B-C capacitance + long channel threshold voltage - - - - - Factor for additional delay time of minority charge - - - - - - - - - Factor for additional delay time of transfer current + body effect parameter - - - - - Flag for turning on and off of vertical NQS effect + + V**(1/2) - - - - - Flicker noise coefficient + bulk Fermi potential - - - - - - Flicker noise exponent factor - + + + + transconductance parameter + transkonduktansparameter - - - - - Flag for determining where to tag the flicker noise source + + + A/V**2 - - - - - Scaling factor for collector minority charge in direction of emitter width + mobility reduction coefficient - - - - - - Scaling factor for collector minority charge in direction of emitter length + + + + + + 1/V - - - - - Bandgap voltage extrapolated to 0 K + mobility coefficient + - - - - - First order relative TC of parameter T0 + + V/m - - - - - - Second order relative TC of parameter T0 + + + longitudinal critical field - - - - - - Temperature exponent for RCI0 + + depletion length coefficient - - - - - Relative TC of saturation drift velocity + narrow-channel effect coefficient - - - - - - Relative TC of VCES + + reverse short channel charge density - - - - - - Temperature exponent of internal base resistance + + A*s/m**2 - - - - - Temperature exponent of external base resistance + characteristic length - - - - - - Temperature exponent of external collector resistance + + threshold voltage temperature coefficient - - - - - - Temperature exponent of emitter resistance + + V/K - - - - - Temperature exponent of mobility in substrate transistor transit time + mobility temperature coefficient - - - - Effective emitter bandgap voltage - - - - - - - - Effective collector bandgap voltage - - - - - - - - Effective substrate bandgap voltage - - - - - - - - Coefficient K1 in T-dependent band-gap equation + Longitudinal critical field temperature exponent - - - - Coefficient K2 in T-dependent band-gap equation + Ibb temperature coefficient - - - - - Exponent coefficient in B-E junction current temperature dependence + + 1/K - - - - - Relative TC of forward current gain for V2.1 model + heavily doped diffusion length - - - - Flag for turning on and off self-heating effect - - - - - - - - J/W + drain/source diffusion sheet resistance - - - - - Flag for compatibility with v2.1 model (0=v2.1) + + Ohm/square - - - - - Temperature at which parameters are specified + source contact resistance + - - - - - Temperature change w.r.t. chip temperature for particular transistor - - - - - HICUM L2 v2.22 - - - - - HICUM Level 0 v1.2 verilog device + + + + + + + + + + + Ohm - - - - reverse Early voltage (normalization volt.) + + drain contact resistance - - - - flag for turning on base related critical current + + gate to source overlap capacitance - - - - Smoothing factor for the d.c. injection width + + + + + F/m - - - - BE charge built-in voltage for d.c. transfer current + + gate to drain overlap capacitance - - - charge BE exponent factor for d.c. transfer current + gate to bulk overlap capacitance - - - - BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current + + first impact ionization coefficient - - - TC of iqf + + 1/m - - - - Exponent factor for temperature dependent thermal resistance + + second impact ionization coefficient - - npn HICUM L0 v1.2 + + saturation voltage factor for impact ionization - - pnp HICUM L0 v1.2 + + area related theshold voltage mismatch parameter - - HICUM Level 0 v1.2g verilog device + + V*m - - high-injection roll-off current + + area related gain mismatch parameter - - TC of iqf (bandgap coefficient of zero bias hole charge) + + area related body effect mismatch parameter - - TC of avalanche prefactor, identical to alfav of Hicum/L2 + + sqrt(V)*m + + + + + + + + + - TC of avalanche exponential factor, identical to alqav of Hicum/L2 + A - - Emitter part coefficient of the zero bias hole charge temperature variation + + + + + + + + F - - Collector part coefficient of the zero bias hole charge temperature variation + + + diode relative area - - Bandgap TC parameter of ver + + charge partition parameter - Bandgap TC parameter of vef - + + + + + + + parameter measurement temperature + parametermätningstemperatur - - Specific recombination current at the BC barrier for high forward injection + + + + + + + + Celsius - - npn HICUM L0 v1.2g + + EPFL-EKV NMOS 2.6 - pnp HICUM L0 v1.2g + EPFL-EKV PMOS 2.6 - - HICUM Level 0 v1.3 verilog device + + equation defined device - - Flag for using third order solution for transfer current + + type of equations - - bias dependence for reverse Early voltage + + number of branches - - Flag for turning temperature dependence of tef0 on and off + + + current equation - - TC of Reverse Early voltage + + + charge equation - - TC of AVER + + Equation Defined Device - - Bandgap difference between base and BE-junction - + + equation + ekvation - - Frist-order TC of iqfh - + + + + Equation + Ekvation - - Second-order TC of iqfh - + + put result into dataset + skriv resultat till datamängden - - npn HICUM L0 v1.3 + + externally driven transient simulation - - pnp HICUM L0 v1.3 - + + + integration method + integrationsmetod - - HICUM Level 2 v2.1 verilog device - + + + order of integration method + integrationsmetodens ordning - - Partitioning factor of parasitic B-C capacitance - + + + initial step size in seconds + initialt tidssteg i sekunder - - Noise factor for internal base resistance - + + + minimum step size in seconds + minsta stegstorlek i sekunder - - HICUM L2 v2.1 - + + + relative tolerance of local truncation error + relative tolerans hos lokalt avrundningsfel - - HICUM Level 2 v2.23 verilog device - + + + absolute tolerance of local truncation error + absolut tolerans hos lokalt avrundningsfel - - HICUM L2 v2.23 - + + + overestimation of local truncation error + överskattning av lokalt avrundningsfel - - HICUM Level 2 v2.24 verilog device + + + relax time step raster - - HICUM L2 v2.24 + + + perform an initial DC analysis - - hicumL2V2p31n verilog device + + + maximum step size in seconds - - Weight factor for the low current minority charge + + External transient simulation - - Parameter describing the slope of hjEi(VBE) + + 1bit full adder verilog device - - Smoothing parameter for hjEi(VBE) at high voltage + + 1Bit FullAdder - - Time constant for modeling carrier jam at low VCE + + 2bit full adder verilog device - - Barrier voltage + + 2Bit FullAdder - - Normalization parameter + + gated D latch verilog device - - Smoothing parameter for barrier voltage + + Gated D-Latch - - fitting factor for critical current + + 4bit Gray to binary converter verilog device - - Flag for turning on and off of correlated noise implementation + + 4Bit Gray2Bin - - Emitter resistance flicker noise coefficient - + + ground (reference potential) + jord (referenspotential) - - Emitter resistance flicker noise exponent factor - + + Ground + Jord - - Bandgap difference between B and B-E junction used for hjEi0 and hf0 - + + gyrator (impedance inverter) + gyrator (impedansinverterare) - - Temperature coefficient for ahjEi - + + gyrator ratio + gyratorförhållande - - Temperature coefficient for hjEi0 - + + Gyrator + Gyrator - - Temperature coefficient for Rth + + 1bit half adder verilog device - - First order relative TC of parameter Rth + + 1Bit HalfAdder - - HICUM L2 V2.31 + + Harmonic balance simulation + + + number of harmonics + antal övertoner + + + + Harmonic balance + Övertonsbalans + 4bit highest priority encoder (binary form) verilog device @@ -12090,7 +7793,7 @@ Felaktigt komponentsradsformat! - + ERROR: No file name in SPICE component "%1". FEL: Inget filnamn i SPICE-komponent "%1". @@ -12513,11 +8216,15 @@ Felaktigt komponentsradsformat! Spänningsstyrd strömkälla - voltage controlled voltage source spänningsstyrd spänningskälla + + + voltage controlled resistor + + resistance gain @@ -12552,7 +8259,7 @@ Felaktigt komponentsradsformat! - + ERROR: No file name in %1 component "%2". @@ -12715,7 +8422,7 @@ Felaktigt komponentsradsformat! - + invalid ogiltig @@ -12824,7 +8531,7 @@ Felaktigt komponentsradsformat! - + Successfully exported @@ -12847,8 +8554,8 @@ Use PNG, JPEG or SVG graphics! - - + + verilog-a user devices @@ -12907,14 +8614,14 @@ Use PNG, JPEG or SVG graphics! - + diagrams - + paintings @@ -13032,16 +8739,16 @@ Set the Octave location on the application settings. - + - + untitled Namnlös - + Format Error: 'Painting' field is not closed! @@ -13216,17 +8923,17 @@ Okänt fält! FEL: Kan ej ladda delkrets "%1". - + WARNING: Skipping library component "%1". - - ERROR: Cannot load library component "%1". - FEL: Kan ej ladda bibliotekskomponent "%1". + + ERROR: "%1": Cannot load library component "%2" from "%3" + - + WARNING: Ignore simulation component in subcircuit "%1". VARNING: Ignorera simuleringskomponent i delkrets "%1". @@ -13236,7 +8943,7 @@ Okänt fält! - + ERROR: Only one digital simulation allowed. FEL: Endast en digital simulering tillåts. @@ -13357,25 +9064,53 @@ a substrate with lower permittivity and larger height. Kan ej spara inställningar! - - Cannot save settings file ! + + Cannot save settings file ! + + + + + Quarter wave filters do not allow low-pass nor high-pass masks + + + + + + QucsActiveFilter + + + &File + &Fil + + + + E&xit + A&vsluta + + + + &View + &Vy + + + + &Console - - - QucsActiveFilter - - &File - &Fil + + Enables/disables the filter calculation console + - - E&xit - A&vsluta + + Console + +Enables/disables the filter calculation console + - + &Help &Hjälp @@ -13395,30 +9130,30 @@ a substrate with lower permittivity and larger height. Om Qt... - - + + Passband attenuation, Ap (dB) - + Stopband attenuation, As (dB) - - Cuttof frequency, Fc (Hz) + + Cutoff frequency, Fc (Hz) - - + + Stopband frequency, Fs (Hz) - + Passband ripple Rp(dB) @@ -13428,7 +9163,7 @@ a substrate with lower permittivity and larger height. - + Filter order @@ -13478,27 +9213,61 @@ a substrate with lower permittivity and larger height. - - Calculation console + + Low Pass - - Filter topology + + General filter amplitude-frequency response - - Filter type: - Filtertyp: + + + + Unable to implement filter with such parameters and topology +Change parameters and/or topology and try again! + + + + + + Filter calculation was successful + - LowPass + Filter calculation terminated with error! + + + + + Filter calculation terminated with error + + + + + Lower cutoff frequency, Fl (Hz) + + + + + Copyright (C) 2014, 2015 by + Copyright (C) 2005, 2006 by {2014, 2015 ?} + + + + Filter topology + Filter type: + Filtertyp: + + + High Pass @@ -13524,62 +9293,45 @@ a substrate with lower permittivity and larger height. - + Cauer section - - General amplitude frequency response - - - - - Filter topology preview (one stage) - - - - + Filter parameters - + Transfer function and Topology - - General filter amplidure-frequency response - - - - + Filter topology preview - + Filter calculation console - + + + Ready. + Klar. + + + Upper cutoff frequency of band-pass/band-stop filter is less than lower. Unable to implement such filter. Change parameters and try again. - - - - Unable to implement filter with such parameters and topology -Change parapeters and/or topology and try again! - - - - + Unable to use Cauer section for Chebyshev or Butterworth frequency response. Try to use another topology. @@ -13595,40 +9347,28 @@ frequency response. Try to use another topology. Function will be implemented in future version - - - -Filter calculation was sucessfull - - - - - -Filter calculation terminated with error - - Upper cutoff frequency, Fu (Hz) - - Lower cuttoff frequency, Fl (Hz) + + Transient bandwidth, TW (Hz) - - Transient bandwidth, TW (Hz) + + Error! - + Active filter design - + About... Om... @@ -13640,12 +9380,7 @@ Active Filter synthesis program - - Copyright (C) 2014 by - Copyright (C) 2005, 2006 by {2014 ?} - - - + About Qt Om Qt @@ -13653,7 +9388,7 @@ Active Filter synthesis program QucsApp - + Schematic Schema @@ -13669,42 +9404,42 @@ Active Filter synthesis program - + VHDL Sources VHDL-källor - - + + Verilog Sources - - + + Verilog-A Sources - - + + Octave Scripts - + Spice Files - + Any File Alla filer - + The schematic search path has been refreshed. @@ -13724,7 +9459,7 @@ Active Filter synthesis program Scheman - + New Ny @@ -13809,13 +9544,13 @@ Active Filter synthesis program - + - + @@ -13838,7 +9573,7 @@ Active Filter synthesis program Fel - + Cannot open "%1". Kan ej öppna "%1". @@ -13850,8 +9585,16 @@ Active Filter synthesis program Bibliotek är förstört. - - + + + + + Search results + + + + + @@ -13870,13 +9613,18 @@ Active Filter synthesis program Information - + Default icon not found: %1.png - + + verilog-a user devices + + + + -port -port @@ -13887,14 +9635,14 @@ Active Filter synthesis program - + The document contains unsaved changes! Dokumentet innehåller osparade ändringr! - + Do you want to save the changes before copying? @@ -13905,13 +9653,13 @@ Active Filter synthesis program - + &Save &Spara - + Copy file @@ -13945,31 +9693,31 @@ Active Filter synthesis program - + Warning Varning - + This will delete the file permanently! Continue ? Detta kommer att ta bort filen för gott! Fortsätta? - + No Nej - + - + Yes Ja - + unknown okänd @@ -14130,7 +9878,7 @@ Active Filter synthesis program - + @@ -14144,7 +9892,7 @@ Active Filter synthesis program Klar. - + Creating new text editor... Skapar ny textredigerare... @@ -14209,12 +9957,12 @@ Active Filter synthesis program - + Cancel Avbryt - + Cannot overwrite an open document Kan ej skriva över ett öppet dokument @@ -14229,7 +9977,7 @@ Active Filter synthesis program Spara alla filer... - + Closing file... Stänger fil... @@ -14253,10 +10001,6 @@ Active Filter synthesis program Open examples directory... - - OK - OK - Printing... @@ -16183,94 +11927,6 @@ Om Qt från Trolltech Warnings in last simulation! Press F5 Varningar i senaste simuleringen! Tryck F5 - - About... - Om... - - - Qucs Version - Quocs version - - - Quite Universal Circuit Simulator - Quite Universal Circuit Simulator - - - Copyright (C) - Copyright (C) - - - by Michael Margraf - by Michael Margraf - - - Simulator by Stefan Jahn - Simulator av Stefan Jahn - - - VHDL simulator 'FreeHDL' by Edwin Naroska and Marius Vollmer - VHDL-simulator 'FreeHDL' av Edwin Naroska och Marius Vollmer - - - Special thanks to Jens Flucke and Raimund Jacob - Speciellt tack till Jens Flucke och Raimund Jacob - - - Many thanks to Mike Brinson for correcting the VHDL output - Många tack till Mike Branson för rättning av VHDL-utdata - - - Translations: - Översättningar: - - - German by Stefan Jahn - Tyska av Stefan Jahn - - - Polish by Dariusz Pienkowski - Polska av Dariusz Pienkowski - - - Romanian by Radu Circa - Rumänska av Radu Circa - - - French by Vincent Habchi, F5RCS - Franska av Vincent Habchi, F5RCS - - - Spanish by Jose L. Redrejo Rodriguez - Spanska av Jose L. Redrejo Rodriguez - - - Japanese by Toyoyuki Ishikawa - Japanska av Toyoyuki Ishikawa - - - Italian by Giorgio Luparia and Claudio Girardi - Italienska av Giorgio Luparia och Claudio Girardi - - - Hebrew by Dotan Nahum - Hebreiska av Dotan Nahum - - - Swedish by Peter Landgren - Svenska av Peter Landgren - - - Turkish by Onur and Ozgur Cobanoglu - Turkiska av Onur och Ozgur Cobanoglu - - - Hungarian by Jozsef Bus - Ungerska av Jozsef Bus - - - Russian by Igor Gorbounov - Ryska av Igor Gorbounov - QucsAttenuator @@ -16539,7 +12195,7 @@ Very simple text editor for Qucs QucsFilter - + &File &Fil @@ -16579,7 +12235,7 @@ Very simple text editor for Qucs - + Filter type: Filtertyp: @@ -16615,29 +12271,29 @@ Very simple text editor for Qucs - + Corner frequency: Brytfrekvens: - + Stop frequency: Stoppfrekvens: - + Stop band frequency: Stoppbandsfrekvens: - - + + Pass band ripple: Passbandsrippel: - + Stop band attenuation: Stoppbandsdämpning: @@ -16707,19 +12363,19 @@ Filtersyntesprogram - + Result: Resultat: - + Error Fel - + Stop frequency must be greater than start frequency. Stoppfrekvens måste vara större än startfrekvens. @@ -16874,17 +12530,22 @@ Enables/disables the table of contents Om - + Component Selection Komponentval - - Search... - Sök... + + Search Lib Components + - + + Clear + + + + Component Komponent @@ -16899,7 +12560,7 @@ Enables/disables the table of contents Visa modell - + About... Om... @@ -16910,6 +12571,12 @@ Enables/disables the table of contents Bibliotekshanterare för Qucs + + + Copyright (C) 2011-2015 Qucs Team + + + Copyright (C) 2005 by Michael Margraf @@ -16918,7 +12585,7 @@ Enables/disables the table of contents - + QucsLib Help @@ -16938,14 +12605,17 @@ Enables/disables the table of contents - - Search result - Sökresultat + + + + + Search results + - + - + @@ -16954,13 +12624,13 @@ Enables/disables the table of contents Fel - + Cannot open "%1". Kan ej öppna "%1". - + @@ -16968,21 +12638,6 @@ Enables/disables the table of contents Library is corrupt. Bibliotek är förstört. - - - Search Library Component - - - - - Result - Resultat - - - - No appropriate component found. - Ingen passande komponent hittad. - QucsSettingsDialog @@ -17997,7 +13652,7 @@ Redigerar symbolen för detta schema - + Error Fel @@ -18015,7 +13670,7 @@ Set the admsXml location on the application settings. - + ERROR: Cannot create library file "%s". @@ -18024,83 +13679,46 @@ Set the admsXml location on the application settings. SearchDialog - - - - Dialog - - - - Text to search for Text att leta efter - - - - Text to replace with Text att bytas mot - - - - Ask before replacing Fråga före utbyte - - - - Case sensitive Shiftkänsligt - - - - Whole words only Endast hela ord - - - - Search backwards Sök baklänges - - - - Next - - - - - Close Stäng @@ -18114,31 +13732,6 @@ Set the admsXml location on the application settings. Search Text Söktext - - - The search result contains all components whose -name contains the search string. All libraries -are included in the search. - Sökresultatet innehåller all komponenter vars -namn innehåller söksträngen. Alla bibliotek -ingår i sökningen. - - - - Search string: - Söksträng: - - - - Search - Sök - - - - - Search result - Sökresultat - SettingsDialog @@ -18581,7 +14174,7 @@ ingår i sökningen. SymbolWidget - + Symbol: Symbol: @@ -18590,6 +14183,13 @@ ingår i sökningen. ! Drag n'Drop me ! + + + Warning: Symbol '%1' missing in Qucs Library. +Drag and Drop may still work. +Please contact the developers. + + TextDoc diff --git a/qucs/translations/qucs_tr.ts b/qucs/translations/qucs_tr.ts index c4aa0ef5b6..2a15ea0d3b 100644 --- a/qucs/translations/qucs_tr.ts +++ b/qucs/translations/qucs_tr.ts @@ -3529,62 +3529,6 @@ Resistor color code computation program - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - @@ -3740,10 +3684,6 @@ Resistor color code computation program - - - - polarity @@ -3948,10 +3888,6 @@ Resistor color code computation program - - - - @@ -4092,5709 +4028,1480 @@ Resistor color code computation program Lehim Teli - - bsim3v34nMOS verilog device - + + + + + + + + + + + simulation temperature + benzetim sıcaklığı + + + + capacitor + sığa + capacitance in Farad + Farad cinsinden sığa + + + initial voltage for transient simulation + Kalımsız benzetim için ilk gerilim degeri + + + + + + + + schematic symbol + devre tasarı simgesi + + + + Capacitor + Sığa + + + + current controlled current source + akımla denetlenen akım kaynağı + + + + + + forward transfer factor + düz geçirme çarpanı + + + + + + + + + + + + + + + delay time + gecikme zamanı + + + + Current Controlled Current Source + Akım Denetimli Akım Kaynağı + + + + current controlled voltage source + akım denetimli gerilim kaynağı + + + + Current Controlled Voltage Source + Akım Denetimli Gerilim Kaynağı + + + + circulator + devrettirici + + + + reference impedance of port 1 + 1. ucun sanal direnci + + + reference impedance of port 2 + 2. ucun sanal direnci + + + reference impedance of port 3 + 3. ucun sanal direnci + + + + Circulator + Devrettirici + + + + coaxial transmission line + eşeksenli iletim hattı + + + + + relative permittivity of dielectric + dielektriğin göreceli geçirgenliği + + + + + specific resistance of conductor + sığanın özdirenci + + + + + relative permeability of conductor + sığanın göreceli geçirgenliği + + + inner diameter of shield + kalkanın iç çapı + + + diameter of inner conductor + içteki iletkenin çapı + + + + mechanical length of the line + hattın mekanik uzunluğu + + + + + + loss tangent + loss tangent + + + + Coaxial Line + Eşeksenli Hat + + + + 1bit comparator verilog device + + + + + 1Bit Comparator + + + + + 2bit comparator verilog device + + + + + 2Bit Comparator + + + + + 4bit comparator verilog device + + + + + 4Bit Comparator + + + + + number of input ports + giriş uçlarının sayısı + + - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - simulation temperature - benzetim sıcaklığı - - - - bsim3v34nMOS - - - - - bsim3v34pMOS verilog device - - - - - bsim3v34pMOS - - - - - bsim4v30nMOS verilog device - - - - - bsim4v30nMOS - - - - - bsim4v30pMOS verilog device - - - - - bsim4v30pMOS - - - - - capacitor - sığa - - - - capacitance in Farad - Farad cinsinden sığa - - - - initial voltage for transient simulation - Kalımsız benzetim için ilk gerilim degeri - - - - - - - - - schematic symbol - devre tasarı simgesi - - - - Capacitor - Sığa - - - - current controlled current source - akımla denetlenen akım kaynağı - - - - - - forward transfer factor - düz geçirme çarpanı - - - - - - - - - - - - - - - delay time - gecikme zamanı - - - - Current Controlled Current Source - Akım Denetimli Akım Kaynağı - - - - current controlled voltage source - akım denetimli gerilim kaynağı - - - - Current Controlled Voltage Source - Akım Denetimli Gerilim Kaynağı - - - - circulator - devrettirici - - - - reference impedance of port 1 - 1. ucun sanal direnci - - - - reference impedance of port 2 - 2. ucun sanal direnci - - - - reference impedance of port 3 - 3. ucun sanal direnci - - - - Circulator - Devrettirici - - - - coaxial transmission line - eşeksenli iletim hattı - - - - - relative permittivity of dielectric - dielektriğin göreceli geçirgenliği - - - - - - specific resistance of conductor - sığanın özdirenci - - - - - - relative permeability of conductor - sığanın göreceli geçirgenliği - - - - inner diameter of shield - kalkanın iç çapı - - - - diameter of inner conductor - içteki iletkenin çapı - - - - - mechanical length of the line - hattın mekanik uzunluğu - - - - - - - loss tangent - loss tangent - - - - Coaxial Line - Eşeksenli Hat - - - - 1bit comparator verilog device - - - - - 1Bit Comparator - - - - - 2bit comparator verilog device - - - - - 2Bit Comparator - - - - - 4bit comparator verilog device - - - - - 4Bit Comparator - - - - - number of input ports - giriş uçlarının sayısı - - - - - - - voltage of high level - yüksek seviyenin gerilimi - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Error - Hata - - - - Format Error: -Wrong line start! - Biçim Hatası: -Yanlış satır başlangıcı! - - - - Format Error: -Unknown component! -%1 - -Do you make use of loadable components? - - - - - Format Error: -Wrong 'component' line format! - Biçim Hatası: -Yanlış "bileşen-component" satır biçimi! - - - - coplanar line - eşyüzey hattı - - - - - - - - - - - - - - name of substrate definition - alttabaka tanımının adı - - - - - - - - - - - width of the line - çizgi kalınlığı - - - - - - - width of a gap - aralığın genişliği - - - - - - - length of the line - çizgi uzunluğu - - - - - - - material at the backside of the substrate - alttabakanın arka yüzündeki malzeme - - - - use approximation instead of precise equation - hassas eşitlik yerine yaklaşım kullan - - - - Coplanar Line - Eşyüzey Çizgisi - - - - ideal coupler - fikirsel çiftleyici (kuplör) - - - - coupling factor - çiftlenim faktörü - - - - phase shift of coupling path in degree - derece cinsinden, çiftlenim yolunun açı kayması - - - - Coupler - Çiftleyici (Kuplör) - - - - coplanar gap - eşyüzey aralık - - - - width of gap between the two lines - iki çizgi arasındaki aralığın genişliği - - - - Coplanar Gap - Eşyüzey Aralık - - - - coplanar open - essyüzey açıklık - - - - width of gap at end of line - çizginin sonundaki aralığın genişliği - - - - Coplanar Open - Esyüzey Açık - - - - coplanar short - eşyüzey kısa devre - - - - Coplanar Short - Eşyüzey Kısa Devre - - - - coplanar step - eşyüzey adım - - - - - - width of line 1 - 1. çizginin genişliği - - - - - - width of line 2 - 2. çizginin genişliği - - - - distance between ground planes - toprak yüzeyleri arasındaki mesafe - - - - Coplanar Step - Eşyüzey Adım - - - - coupled transmission lines - - - - - characteristic impedance of even mode - - - - - characteristic impedance of odd mode - - - - - - - - electrical length of the line - hattın elektriksel uzunluğu - - - - relative dielectric constant of even mode - - - - - relative dielectric constant of odd mode - - - - - attenuation factor per length of even mode - - - - - attenuation factor per length of odd mode - - - - - Coupled Transmission Line - - - - - D flip flop with asynchron reset - Eşzamanlı Olmayan resetli D tipi tetik devresi - - - - D-FlipFlop - D-TetikDevresi - - - - - dc simulation - dc benzetim - - - - - - - relative tolerance for convergence - yakınsama için göreli hoşgörü - - - - - - - absolute tolerance for currents - akımlar için mutlak hoşgörü - - - - - - - absolute tolerance for voltages - gerilimler için mutlak hoşgörü - - - - put operating points into dataset - çalışma noktaları bilgisini veri topluluguna koy - - - - - - - maximum number of iterations until error - hataya kadar en çok deneme sayısı - - - - save subcircuit nodes into dataset - alt-devre düğümlerini veri topluluguna kaydet - - - - preferred convergence algorithm - tercih edilen yakınsama cebri - - - - - - method for solving the circuit matrix - devre tablosu çözüm yöntemi - - - - dc block - dc kalıp - - - - dc Block - dc Kalıp - - - - dc feed - dc besleme - - - - dc Feed - dc Besleme - - - - D flip flop with set and reset verilog device - - - - - - - - cross coupled gate transfer function high scaling factor - - - - - - - - cross coupled gate transfer function low scaling factor - - - - - - - - cross coupled gate delay - - - - - D-FlipFlop w/ SR - - - - - diac (bidirectional trigger diode) - diyak (çift-yön tetiklemeli diyot) - - - - - (bidirectional) breakover voltage - (çift-yön) kɪrɪlma gerilimi - - - - (bidirectional) breakover current - (çift-yön) kɪrɪlma akɪmɪ - - - - - - parasitic capacitance - asalak sığa - - - - - - - - emission coefficient - yayım katsayısı - - - - - - intrinsic junction resistance - asıl eklem direnci - - - - Diac - Diyak - - - - - digital simulation - dijital benzetim - - - - type of simulation - benzetim çeşidi - - - - duration of TimeList simulation - ZamanDizelgesi-TimeList benzetim süresi - - - - netlist format - bağlantı dizgesi biçimi - - - - - digital source - dijital kaynak - - - - - number of the port - uç numarası - - - - initial output value - ilk çıkış değeri - - - - list of times for changing output value - Degisen çıkıs degeri için zaman dizelgesi - - - - diode - diyot - - - - - - zero-bias junction capacitance - sıfır-kutuplama eklem sığası - - - - - - - - grading coefficient - değişim katsayısı - - - - - - - junction potential - eklem gerilimi - - - - linear capacitance - doğrusal sığa - - - - recombination current parameter - tekrar birleşim akımı değişkeni - - - - emission coefficient for Isr - Isr için yayım katsayısı - - - - ohmic series resistance - omik (Shotky etkisi yok) seri direnç - - - - - - transit time - geçis süresi - - - - high-injection knee current (0=infinity) - yüksek-enjeksiyon bükülme akımı (0=sonsuz) - - - - - - reverse breakdown voltage - ters kırılma gerilimi - - - - - - current at reverse breakdown voltage - ters kırılma geriliminde akım - - - - Bv linear temperature coefficient - Bv doğrusal sıcaklık katsayısı - - - - Rs linear temperature coefficient - Rs doğrusal sıcaklık katsayısı - - - - Tt linear temperature coefficient - Tt doğrusal sıcaklık katsayısı - - - - Tt quadratic temperature coefficient - Tt ikinci dereceden sıcaklık katsayısı - - - - M linear temperature coefficient - M doğrusal sıcaklık katsayısı - - - - M quadratic temperature coefficient - M ikinci dereceden sıcaklık katsayısı - - - - - default area for diode - diyot için varsayılan alan - - - - Diode - Diyot - - - - data voltage level shifter (digital to analogue) verilog device - - - - - - voltage level - - - - - - time delay - - - - - D2A Level Shifter - - - - - data voltage level shifter (analogue to digital) verilog device - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - V - V - - - - A2D Level Shifter - - - - - 2to4 demultiplexer verilog device - - - - - 2to4 Demux - - - - - 3to8 demultiplexer verilog device - - - - - 3to8 Demux - - - - - 4to16 demultiplexer verilog device - - - - - 4to16 Demux - - - - - externally controlled voltage source - - - - - - voltage in Volts - Volt cinsinden gerilim - - - - Externally Controlled Voltage Source - - - - - EPFL-EKV MOS 2.6 verilog device - - - - - long = 1, short = 2 - - - - - length parameter - - - - - - - - - - - - - m - - - - - Width parameter - - - - - parallel multiple device number - - - - - series multiple device number - - - - - gate oxide capacitance per unit area - - - - - F/m**2 - - - - - metallurgical junction depth - - - - - channel width correction - - - - - channel length correction - - - - - long channel threshold voltage - - - - - body effect parameter - - - - - V**(1/2) - - - - - bulk Fermi potential - - - - - - - transconductance parameter - ters iletkenlik (transconductance) değişkeni - - - - - A/V**2 - - - - - mobility reduction coefficient - - - - - - - - - - - - - 1/V - 1/V - - - - mobility coefficient - - - - - - - V/m - - - - - - longitudinal critical field - - - - - depletion length coefficient - - - - - narrow-channel effect coefficient - - - - - reverse short channel charge density - - - - - A*s/m**2 - - - - - characteristic length - - - - - threshold voltage temperature coefficient - - - - - - - - - - - - - V/K - V/K - - - - mobility temperature coefficient - - - - - Longitudinal critical field temperature exponent - - - - - Ibb temperature coefficient - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1/K - 1/K - - - - heavily doped diffusion length - - - - - drain/source diffusion sheet resistance - - - - - Ohm/square - - - - - source contact resistance - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Ohm - Ohm - - - - drain contact resistance - - - - - gate to source overlap capacitance - - - - - - - - F/m - - - - - gate to drain overlap capacitance - - - - - gate to bulk overlap capacitance - - - - - first impact ionization coefficient - - - - - 1/m - - - - - second impact ionization coefficient - - - - - saturation voltage factor for impact ionization - - - - - area related theshold voltage mismatch parameter - - - - - V*m - - - - - area related gain mismatch parameter - - - - - area related body effect mismatch parameter - - - - - sqrt(V)*m - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A - A - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - F - F - - - - - diode relative area - - - - - charge partition parameter - - - - - - - - - - - parameter measurement temperature - değişken ölçüm sıcaklığı - - - - - - - - - - Celsius - Celsius - - - - EPFL-EKV NMOS 2.6 - - - - - EPFL-EKV PMOS 2.6 - - - - - equation defined device - eşitlikle tanımlanmış cihaz - - - - type of equations - eşitliklerin çeşidi - - - - number of branches - kol sayısı - - - - - current equation - akım eşitliği - - - - - charge equation - yük eşitliği - - - - Equation Defined Device - Eşitlikle Tanımlanmış Cihaz - - - - equation - eşitlik - - - - - - Equation - Eşitlik - - - - put result into dataset - sonucu veri topluluğuna koy - - - - externally driven transient simulation - - - - - - integration method - sürekli toplam yöntemi - - - - - order of integration method - sürekli toplam yönteminin mertebesi - - - - - initial step size in seconds - saniye cinsinden ilk adım - - - - - minimum step size in seconds - saniye cinsinden en küçük adım - - - - - relative tolerance of local truncation error - yerel kesme hatasının göreli hoşgörüsü - - - - - absolute tolerance of local truncation error - yerel kesme hatasının mutlak hoşgörüsü - - - - - overestimation of local truncation error - yerel kesme hatasının abartısı - - - - - relax time step raster - gevşeme zamanı adım uzunluğu - - - - - perform an initial DC analysis - Baslangıç için bir DC çözümlemesi gerçeklestir - - - - - maximum step size in seconds - saniye cinsinden en büyük adım büyüklüğü - - - - External transient simulation - - - - - 1bit full adder verilog device - - - - - 1Bit FullAdder - - - - - 2bit full adder verilog device - - - - - 2Bit FullAdder - - - - - gated D latch verilog device - - - - - Gated D-Latch - - - - - 4bit Gray to binary converter verilog device - - - - - 4Bit Gray2Bin - - - - - ground (reference potential) - toprak (referans gerilimi) - - - - Ground - Toprak - - - - gyrator (impedance inverter) - jiratör (sanal direnç değilleyici) - - - - gyrator ratio - jiratör oranı - - - - Gyrator - Jiratör - - - - 1bit half adder verilog device - - - - - 1Bit HalfAdder - - - - - Harmonic balance simulation - Katsıklık (Harmonik) denge benzetimi - - - - number of harmonics - Katsıklık (harmonik) sayısı - - - - Harmonic balance - Harmonic (harmonik) denge - - - - HBT model by Ferdinand-Braun-Institut (FBH), Berlin - HBT modeli, Ferdinand-Braun-Institut (FBH) Berlin tarafından yapıldı - - - - - - - Ignored - Görmezden gelindi - - - - Device operating temperature, Celsius - Cihaz çalışma sıcaklığı, Selsiyüs - - - - Thermal resistance, K/W - Isısal direnç, K/W - - - - - - - - - - - - - Thermal capacitance - Isısal sığa - - - - Scaling factor, number of emitter fingers - Boyutlandırma çarpanı, E parmak sayısı - - - - Length of emitter finger, m - E parmak uzunluğu, m - - - - Width of emitter finger, m - E parmak genişliği, m - - - - Forward saturation current density, A/um^2 - İleri doyum akımı yoğunluğu, A/um^2 - - - - Forward current emission coefficient - İleri akım iletimkatsayısı - - - - Forward thermal activation energy, V, (0 == disables temperature dependence) - İleri ısısal etkinleştirme enerjisi, V, (0 == sıcaklık bağımlılığını kapatır) - - - - B-E leakage saturation current density, A/um^2 - B-E sızıntı doyum akım yoğunluğu, A/um^2 - - - - B-E leakage emission coefficient - B-E sızıntı iletim katsayısı - - - - Limiting resistor of B-E leakage diode, Ohm - B-E kaçak diyodunun sınırlama direnci, Ohm - - - - B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - B-E kaçağı ısısal etkinleştirme enerjisi, V, (0==sıcaklık bağımlılığını kaldırır) - - - - 2nd B-E leakage saturation current density, A/um^2 - 2. B-E kaçak doyum akım yoğunluğu, A/um^2 - - - - 2nd B-E leakage emission coefficient - 2. B-E kaçak yayım sabiti - - - - 2nd Limiting resistor of B-E leakage diode, Ohm - B-E kaçak diyodunun 2. sınırlama direnci, Ohm - - - - 2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - 2. B-E kaçak ısısal etkinleştirme enerjisi, V, (0==sıcaklık bağımlılığını kaldırır) - - - - Reverse saturation current density, A/um^2 - Ters doyum akımı yoğunluğu, A/um^2 - - - - Reverse current emission coefficient - Ters akım yayılım katsayısı - - - - Reverse thermal activation energy, V, (0 == disables temperature dependence) - Ters ısısal etkinleştirme enerjisi, V, (0 == sıcaklık bağımlılığını kapatır) - - - - Fraction of Cjc that goes to internal base node - İç baz düğümüne sayılan Cjc kesri - - - - B-C leakage saturation current density, A/um^2 (0. switches off diode) - B-C kaçak doyum akım yoğunluğu, A/um^2 (0==diyodu kapatır) - - - - B-C leakage emission coefficient (0. switches off diode) - B-C kaçak yayım sabiti (0==diyodu kapatır) - - - - Limiting resistor of B-C leakage diode, Ohm - B-C kaçak diyodunun sınırlama direnci, Ohm - - - - B-C leakage thermal activation energy, V, (0 == disables temperature dependence) - B-C kaçağı ısısal etkinleştirme enerjisi, V, (0==sıcaklık bağımlılığını kaldırır) - - - - Ideal forward beta - Mükemmel ileri beta - - - - Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence) - ileri akım kazancı sıcaklık sabiti, -1/K, (0==sıcaklık bağımlılığını kaldırır) - - - - Ideal reverse beta - Mükemmel geri beta - - - - Forward Early voltage, V, (0 == disables Early Effect) - IIleri Erken gerilimi, V, (0==Erken etkisini kapatır) - - - - Reverse Early voltage, V, (0 == disables Early Effect) - Ters Erken gerilimi, V, (0==Erken etkisini kapatır) - - - - Forward high-injection knee current, A, (0 == disables Webster Effect) - İleri yüksek injeksiyon büküm akımı, A, (0==Webster etkisini kapatır) - - - - Reverse high-injection knee current, A, (0 == disables Webster Effect) - Ters yüksek injeksiyon büküm akımı, A, (0==Webster etkisini kapatır) - - - - C-E breakdown exponent, (0 == disables collector break-down) - C-E kırılma üsteli, (0==kollektör kırılma özelliğini kapatır) - - - - C-E breakdown voltage, V, (0 == disables collector break-down) - C-E kırılma gerilimi, V, (0==kırılma gerilimi etkinliğini kaldırır) - - - - C-E breakdown factor, (0 == disables collector break-down) - C-E kırılma çarpanı, V, (0==kollektör kırılma özelliğini kaldırır) - - - - B-E breakdown voltage, V, (0 == disables emitter break-down) - B-E kırılma gerilimi, V, (0==emetör kırılma özelliğini kaldırır) - - - - Ideal reverse transit time, s - Mükemmel ters geçis zamanı, s - - - - Extrinsic BC diffusion capacitance, F - Harici BC yayınma sığası, F - - - - Ideal forward transit time, s - Mükemmel düz geçis zamanı, s - - - - Temperature coefficient of forward transit time - İleri geçiş zamanı sıcaklık sabiti - - - - Excess transit time coefficient at base push-out - Baz dışarı-it olayı sırasında (push-out) aşırı geçiş-zamanı sabiti - - - - Smoothing parameter for Thcs - Thcs için yumuşatma değişkeni - - - - B-E zero-bias depletion capacitance, F/um^2 - B-E sıfır-kutuplama tüketim sığası, F/um^2 - - - - B-E junction exponential factor - B-E eklemi üstel çarpanı - - - - B-E junction built-in potential, V - B-E eklem iç gerilimi, V - - - - B-C zero-bias depletion capacitance, F/um^2 - B-C sıfır-kutuplama tüketim sığası, F/um^2 - - - - B-C junction exponential factor - B-C eklemi üstel çarpanı - - - - B-C junction built-in potential, V - B-C eklem iç gerilimi, V - - - - not used - kullanılmamış - - - - Minimum B-C depletion capacitance (Vbc dependence), F/um^2 - B-C tüketim sığasının en küçük değeri (Vbc bağımlılığı), F/um^2 - - - - Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction) - Cbc'nin Cmin'e eşit olduğu kollektör akımı, A/um^2 (0==Cbc azalımını devre dışı bırakır) - - - - Fraction of Cmin, lower limit of BC capacitance (Ic dependence) - Cmin kesri, BC sığasının aşağı sınırı (Ic bağımlılığı) - - - - Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out) - Düşük gerilimler için Baz dışarı-it olayının (push-out) başladığı nokta, Ohm*um^2 (0==Baz dışarı-it olayını devre dışı bırakır) - - - - Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out) - Yüksek gerilimler için Baz dışarı-it olayının (push-out) başladığı nokta, A/um^2 (0==Baz dışarı-it olayını devre dışı bırakır) - - - - Slope of Jk at high currents , Ohm*um^2 - Yüksek akımlarda Jk' nin eğimi, Ohm*um^2 - - - - Voltage shift of base push-out onset, V - Baz dışarı-it (push-out) olayının başlangıcındaki gerilim ötelemesi, V - - - - Collector resistance, Ohm/finger - C direnci, Ohm/parmak - - - - Emitter resistance, Ohm/finger - E direnci, Ohm/parmak - - - - Extrinsic base resistance, Ohm/finger - Harici baz direnci, Ohm/parmak - - - - Inner Base ohmic resistance, Ohm/finger - İç Baz omik direnci, Ohm/parmak - - - - Collector inductance, H - C sargı etkisi, H - - - - Emitter inductance, H - E sargı etkisi, H - - - - Base inductance, H - B sargı etkisi, H - - - - Extrinsic B-C capacitance, F - Harici B-C sığası, F - - - - Extrinsic base capacitance, F - Harici baz sığası, F - - - - Extrinsic collector capacitance, F - Harici kollektör sığası, F - - - - - Flicker-noise coefficient - Flicker gürültü sabiti - - - - - Flicker-noise exponent - Flicker gürültü üsteli - - - - - Flicker-noise frequency exponent - Flicker gürültü sıklık üsteli - - - - Burst noise coefficient - Ani gürültü sabiti - - - - Burst noise exponent - Ani gürültü üsteli - - - - Burst noise corner frequency, Hz - Hertz cinsinden ani gürültü köşe sıklığı + + + + voltage of high level + yüksek seviyenin gerilimi + + - Ambient temperature at which the parameters were determined - Değişkenlerin elde edildiği ortam sıcaklığı - - - - FBH HBT - FBH HBT - - - - HICUM Level 0 v1.12 verilog device - HICUM Seviyesi 0 v1.12 verilog devre elemanı - - + + + + + + + + + + + - - - - (Modified) saturation current - (Değiştirilmiş) doyum akımı - - - - - - - Non-ideality coefficient of forward collector current - İleri kollektör akımının mükemmel olmama katsayısı - - - - - - - Non-ideality coefficient of reverse collector current - Ters kollektör akımının mükemmel olmama katsayısı - - - - - - - - - - - - - - - forward Early voltage (normalization volt.) - ileri Erken gerilimi (göreli boyutlandırma, gerilim) - - - - - - - forward d.c. high-injection roll-off current - - - - - - - - inverse d.c. high-injection roll-off current - ters d.c. yüksek-zerk roll-off akımı - - - - - - - high-injection correction current - yüksek-zerk düzeltme akımı - - - - - - high-injection correction factor - yüksek-zerk düzeltme çarpanı - - - - - - - BE saturation current - BE doyum akımı - - - - - - - BE non-ideality factor - BE mükemmel olmama (gerçeklik) çarpanı - - - - - - - BE recombination saturation current - BE tekrar-birleşim doyum akımı - - - - - - - BE recombination non-ideality factor - BE tekrar-birleşim mükemmel olmama (gerçeklik) çarpanı - - - - - - - BC saturation current - BC doyum akımı - - - - - - - BC non-ideality factor - BC mükemmel olmama (gerçeklik) çarpanı - - - - - - - Zero-bias BE depletion capacitance - BE sıfır-kutuplama tüketim sığası - - - - - - - BE built-in voltage - BE iç gerilimi - - - - - - - BE exponent factor - BE üstel çarpan - - - - - - - Ratio of maximum to zero-bias value - En yüksek değerin sıfır-kutuplama durumundaki değere oranı + + + + + + + + + + + + + + + + + + Error + Hata - - - - - low current transit time at Vbici=0 - Vbici=0 durumunda alçak akım geçiş zamanı + + Format Error: +Wrong line start! + Biçim Hatası: +Yanlış satır başlangıcı! - - - - - Base width modulation contribution - Baz genişlik değişimi katkısı + + Format Error: +Unknown component! +%1 + +Do you make use of loadable components? + - - - - - SCR width modulation contribution - SCR genişlik değişimi katkısı + + Format Error: +Wrong 'component' line format! + Biçim Hatası: +Yanlış "bileşen-component" satır biçimi! - - - - - Storage time in neutral emitter - Nötr emetörde saklama zamanı + + coplanar line + eşyüzey hattı - - - - - Exponent factor for emitter transit time - + + + + + + + + + + + + name of substrate definition + alttabaka tanımının adı - - - - Saturation time at high current densities - Yüksek akım yoğunluklarındaki doyum zamanı - - - - - - - Smoothing factor for current dependence - + + + + + + + + width of the line + çizgi kalınlığı - - - - Storage time at inverse operation - Ters-çalışma durumunda saklama zamanı + + + + width of a gap + aralığın genişliği - - - - - Low-field collector resistance under emitter - Emetör altında düşük-alan kollektör direnci + + + + + length of the line + çizgi uzunluğu - - - - - Voltage dividing ohmic and satur.region - Omik ve doyum rejimlerini ayıran gerilim değeri + + + + + material at the backside of the substrate + alttabakanın arka yüzündeki malzeme - - - - - - - - Punch-through voltage - "İleri delgi" (punch-through) gerilimi - - - - - - - Saturation voltage - Doyum akımı + use approximation instead of precise equation + hassas eşitlik yerine yaklaşım kullan - - - - - Total zero-bias BC depletion capacitance - Toplam B-C sıfır-kutuplama tüketim sığası + + Coplanar Line + Eşyüzey Çizgisi - - - - - BC built-in voltage - BC iç gerilimi + + ideal coupler + fikirsel çiftleyici (kuplör) - - - - - BC exponent factor - BC üstel çarpanı + + coupling factor + çiftlenim faktörü - - - - Punch-through voltage of BC junction - BC eklemi "ileri delgi" (punch-through) gerilimi - - - - - - - Zero-bias external BC depletion capacitance - Dış B-C sıfır-kutuplama tüketim sığası - - - - - - - External BC built-in voltage - Dış B-C eklemi iç (built-in) gerilimi + phase shift of coupling path in degree + derece cinsinden, çiftlenim yolunun açı kayması - - - - - External BC exponent factor - Dış B-C eklemi üstel çarpanı + + Coupler + Çiftleyici (Kuplör) - - - - - Split factor = Cjci0/Cjc0 - Ayırma çarpanı = Cjci0/Cjc0 + + coplanar gap + eşyüzey aralık - - - - - Internal base resistance at zero-bias - Sıfır kutuplama durumunda iç baz direnci + + width of gap between the two lines + iki çizgi arasındaki aralığın genişliği - - - - - Geometry factor - Geometri çarpanı + + Coplanar Gap + Eşyüzey Aralık - - - - - - - - - - External base series resistance - Harici baz seri direnci + + coplanar open + essyüzey açıklık - - - - - - - - - - Emitter series resistance - E (emetör) seri direnci + + width of gap at end of line + çizginin sonundaki aralığın genişliği - - - - - - - - - - External collector series resistance - Harici C (kolektér seri) direnci + + Coplanar Open + Esyüzey Açık - - - - - - - - - - Substrate transistor transfer saturation current - Alt-tabaka transistör geçiş doyum akımı + + coplanar short + eşyüzey kısa devre - - - - - Substrate transistor transfer current non-ideality factor - Alt-tabaka transistör geçiş akımı mükemmel olmama (gerçeklik) çarpanı + + Coplanar Short + Eşyüzey Kısa Devre - - - - - SC saturation current - SC doyum akımı + + coplanar step + eşyüzey adım - - - - - SC non-ideality factor - SC mükemmel olmama (gerçeklik) çarpanı + + + + width of line 1 + 1. çizginin genişliği - - - - Zero-bias SC depletion capacitance - SC sıfır-kutuplama tüketim sığası - - - - - - - SC built-in voltage - SC iç gerilimi - - - - - - - External SC exponent factor - Dış SC eklemi üstel çarpanı + + + width of line 2 + 2. çizginin genişliği - - - - SC punch-through voltage - SC "ileri delgi" (punch-through) gerilimi + distance between ground planes + toprak yüzeyleri arasındaki mesafe - - - - - Collector-base isolation (overlap) capacitance - CB yalıtım (üst üste binme) sığası + + Coplanar Step + Eşyüzey Adım - - - - - Emitter-base oxide capacitance - EB oksit sığası + + coupled transmission lines + - - - - - Exponent factor - Űstel çarpan + + characteristic impedance of even mode + - - - - Prefactor - Ön çarpan - - - - - - - M^(1-AF) - M^(1-AF) + characteristic impedance of odd mode + - - - - flicker noise exponent factor - flicker gürültüsü üstel çarpanı + + + + electrical length of the line + hattın elektriksel uzunluğu - - - - Bandgap-voltage - Bant-genişliği gerilimi - - - - - - - Effective emitter bandgap-voltage - Etkin emetör bant-genişliği gerilimi - - - - - - - Effective collector bandgap-voltage - Etkin kollektör bant-genişliği gerilimi - - - - - - - Effective substrate bandgap-voltage - Etkin alt-tabaka bant-genişliği gerilimi - - - - - - - Coefficient K1 in T-dependent bandgap equation - T-bağımlı bant-genişliği eşitliğindeki K1 sabiti - - - - - - - Coefficient K2 in T-dependent bandgap equation - T-bağımlı bant-genişliği eşitliğindeki K2 sabiti - - - - - - - Frist-order TC of tf0 - Birinci-derece TC (tf0 için) - - - - - - - Second-order TC of tf0 - İkinci-derece TC (tf0 için) - - - - - - - - 1/K^2 - 1/K^2 + relative dielectric constant of even mode + - - - - - - - - Exponent coefficient in transfer current temperature dependence - Geçiş akımı sıcaklık bağımlığı üstel çarpanı + relative dielectric constant of odd mode + - - - - Exponent coefficient in BE junction current temperature dependence - B-E eklem akımı sıcaklık bağımlılığı üstel sabiti + attenuation factor per length of even mode + - - - - TC of epi-collector diffusivity - Kollektör dışındaki dağılmanın (içine işlemenin) sıcaklık sabiti + attenuation factor per length of odd mode + - - - - - Relative TC of satur.drift velocity - Doygun sürüklenme hızı göreceli sıcaklık katsayısı (TC) + + Coupled Transmission Line + - - - - - Relative TC of vces - VCES için göreceli TC + + D flip flop with asynchron reset + Eşzamanlı Olmayan resetli D tipi tetik devresi - - - - - TC of internal base resistance - İç B (baz) direnci sıcaklık katsayısı + + D-FlipFlop + D-TetikDevresi - - - - - TC of external base resistance - Dış B (baz) direnci sıcaklık katsayısı + + + dc simulation + dc benzetim - - - - - TC of external collector resistance - Dış kollektör direnci sıcaklık katsayısı + + + + + relative tolerance for convergence + yakınsama için göreli hoşgörü - - - - TC of emitter resistances - Emetör direnci sıcaklık katsayısı + + + + absolute tolerance for currents + akımlar için mutlak hoşgörü - - - TC of avalanche prefactor - Çığ ön çarpanı sıcaklık katsayısı + + + + absolute tolerance for voltages + gerilimler için mutlak hoşgörü - - - - TC of avalanche exponential factor - Çığ üstel çarpanı sıcaklık katsayısı + + put operating points into dataset + çalışma noktaları bilgisini veri topluluguna koy - - - - Flag for self-heating calculation - Kendi kendine ısınma hesabı için bayrak + + + + maximum number of iterations until error + hataya kadar en çok deneme sayısı - - - - - - - - - Thermal resistance - Isısal direnç - - - - - - - - - - - K/W - K/W + save subcircuit nodes into dataset + alt-devre düğümlerini veri topluluguna kaydet - - - - Ws/K - Ws/K - - - - - - - Temperature for which parameters are valid - Değişkenlerin geçerli olduğu sıcaklık + preferred convergence algorithm + tercih edilen yakınsama cebri - - - - - - - - - C - C + + + + method for solving the circuit matrix + devre tablosu çözüm yöntemi - - - - - Temperature change for particular transistor - Belirli transistor için sıcaklık değişimi + + dc block + dc kalıp - - - - - - - - - K - K + + dc Block + dc Kalıp - - npn HICUM L0 v1.12 - npn HICUM L0 v1.12 + + dc feed + dc besleme - - pnp HICUM L0 v1.12 - pnp HICUM L0 v1.12 + + dc Feed + dc Besleme - - HICUM Level 2 v2.22 verilog device - HICUM Seviyesi 2 v2.22 verilog devre elemanı + + D flip flop with set and reset verilog device + - - - - - GICCR constant - GICCR sabiti + + + + cross coupled gate transfer function high scaling factor + - - - - - A^2s - A^2s + + + + + cross coupled gate transfer function low scaling factor + - - - - - Zero-bias hole charge - sıfır-kutuplama oluk yükü + + + + cross coupled gate delay + - - - - - - - - - Coul - Coul + + D-FlipFlop w/ SR + - - - - - - High-current correction for 2D and 3D effects - 2B ve 3B etkileri için yüksek akım düzeltmesi + + diac (bidirectional trigger diode) + diyak (çift-yön tetiklemeli diyot) - - - - - - Emitter minority charge weighting factor in HBTs - HBT' ler için E azınlık taşıyıcı ağırlık çarpanı + + + (bidirectional) breakover voltage + (çift-yön) kɪrɪlma gerilimi - - - - - Collector minority charge weighting factor in HBTs - HBT' ler için C azınlık taşıyıcı ağırlık çarpanı + (bidirectional) breakover current + (çift-yön) kɪrɪlma akɪmɪ - - - - - B-E depletion charge weighting factor in HBTs - HBT' ler için B-E tüketim bölgesi taşıyıcı ağırlık çarpanı + + + parasitic capacitance + asalak sığa - - - - - - B-C depletion charge weighting factor in HBTs - HBT' ler için B-C arınmış bölge yükü ağırlık çarpanı + + + + + + emission coefficient + yayım katsayısı - - - - - Internal B-E saturation current - İç B-E doyum akımı + + + intrinsic junction resistance + asıl eklem direnci - - - - - - Internal B-E current ideality factor - İç B-E akımı mükemmellik çarpanı + + Diac + Diyak - - - - - - Internal B-E recombination saturation current - İç B-E yeniden birleşme doyum akımı + + + digital simulation + dijital benzetim - - - - - - Internal B-E recombination current ideality factor - İç B-E yeniden birleşme doyum akımı mükemmellik çarpanı + + type of simulation + benzetim çeşidi - - - - - Peripheral B-E saturation current - Çevresel B-E doyum akımı + duration of TimeList simulation + ZamanDizelgesi-TimeList benzetim süresi - - - - - - Peripheral B-E current ideality factor - Çevresel B-E doyum akımı mükemmellik çarpanı + + netlist format + bağlantı dizgesi biçimi - - - - - - Peripheral B-E recombination saturation current - Çevresel B-E yeniden birleşme doyum akımı + + + digital source + dijital kaynak - - - - - - Peripheral B-E recombination current ideality factor - Çevresel B-E yeniden birleşme doyum akımı mükemmellik çarpanı + + + number of the port + uç numarası - - - - - Non-ideality factor for III-V HBTs - III-V HBT' ler için mükemmel olmama (gerçeklik) çarpanı + initial output value + ilk çıkış değeri - - - - Base current recombination time constant at B-C barrier for high forward injection - Yüksek ileri zerk için, B-C engelindeki baz akımı yeniden-birleşme zaman sabiti + list of times for changing output value + Degisen çıkıs degeri için zaman dizelgesi - - - - - - Internal B-C saturation current - İç B-C doyum akımı + + diode + diyot - - - - - - Internal B-C current ideality factor - İç B-C akımı mükemmellik çarpanı + + + + zero-bias junction capacitance + sıfır-kutuplama eklem sığası - - - - - External B-C saturation current - Harici B-C doyum akımı - - - - - - - - External B-C current ideality factor - Harici B-C akımı mükemmellik çarpanı + + + + + grading coefficient + değişim katsayısı - - - - - B-E tunneling saturation current - B-E tünelleme doyum akımı + + + + junction potential + eklem gerilimi - - - - - - Exponent factor for tunneling current - Tünelleme akımı için üstel çarpan + + linear capacitance + doğrusal sığa - - - - Specifies the base node connection for the tunneling current - Tünelleme akımı için baz ucu bağlantısı tanımlar + recombination current parameter + tekrar birleşim akımı değişkeni - - - - - Avalanche current factor - Çığ akım çarpanı - - - - - - - - Exponent factor for avalanche current - Çığ akımı için üstel çarpan + emission coefficient for Isr + Isr için yayım katsayısı - - - - - - Relative TC for FAVL - FAVL için göreceli TC + + ohmic series resistance + omik (Shotky etkisi yok) seri direnç - - - - - - Relative TC for QAVL - QAVL için göreceli TC + + + + transit time + geçis süresi - - - - - - Zero bias internal base resistance - Sıfır kutuplama dahili B (baz) direnci + + high-injection knee current (0=infinity) + yüksek-enjeksiyon bükülme akımı (0=sonsuz) - - - - - - Factor for geometry dependence of emitter current crowding - Emetör akımı kalabalıklaştırma' nın geometriye bağımlılık çarpanı + + + + reverse breakdown voltage + ters kırılma gerilimi - - - - - Correction factor for modulation by B-E and B-C space charge layer - B-E ve B-C uzay yük tabakası tarafından gerçekleştirilen "değiştirme" (modülasyon) olayı için düzeltme çarpanı + + + current at reverse breakdown voltage + ters kırılma geriliminde akım - - - - - - Ratio of HF shunt to total internal capacitance (lateral NQS effect) - HF paralel' in toplam etkin iç sığa' ya oranı (yanal NQS etkisi) + + Bv linear temperature coefficient + Bv doğrusal sıcaklık katsayısı - - - - - Ration of internal to total minority charge - İç azınlık yükün toplama oranı - - - - - - - - Forward ideality factor of substrate transfer current - İleri mükemmellik çarpanının alt-tabaka geçiş akımı + Rs linear temperature coefficient + Rs doğrusal sıcaklık katsayısı - - - - - C-S diode saturation current - C-S diyot doyum akımı + Tt linear temperature coefficient + Tt doğrusal sıcaklık katsayısı - - - - - - Ideality factor of C-S diode current - C-S diyot akımı mükemmellik çarpanı + + Tt quadratic temperature coefficient + Tt ikinci dereceden sıcaklık katsayısı - - - - - Transit time for forward operation of substrate transistor - Alt-tabaka transistörünün ileri çalışma durumundaki geçiş zamanı + M linear temperature coefficient + M doğrusal sıcaklık katsayısı - - - - - - Substrate series resistance - Alt tabaka seri direnci + + M quadratic temperature coefficient + M ikinci dereceden sıcaklık katsayısı - - - - - - Substrate shunt capacitance - Alt tabaka paralel sığası + + + default area for diode + diyot için varsayılan alan - - - - - - Internal B-E zero-bias depletion capacitance - İç B-E sıfır-kutuplama tüketim sığası + + Diode + Diyot - - - - - - Internal B-E built-in potential - İç B-E eklem gerilimi + + data voltage level shifter (digital to analogue) verilog device + - - - - - Internal B-E grading coefficient - İç B-E değişim katsayısı + + voltage level + - - - - - Ratio of maximum to zero-bias value of internal B-E capacitance - İç B-E sığasının en yüksek değerinin sıfır kutuplama durumundaki değerine oranı + + time delay + - - - - - - Peripheral B-E zero-bias depletion capacitance - Çevresel B-E sıfır-kutuplama tüketim sığası + + D2A Level Shifter + - - - - - - Peripheral B-E built-in potential - Çevresel B-E eklemi iç gerilimi + + data voltage level shifter (analogue to digital) verilog device + + + + + + + + + + + - - - - - Peripheral B-E grading coefficient - Çevresel B-E değişim katsayısı - - - - - - - - Ratio of maximum to zero-bias value of peripheral B-E capacitance - Çevresel B-E eklem sığasının en yüksek değerinin sıfır kutuplama durumundaki değerine oranı - - - - - - - - Internal B-C zero-bias depletion capacitance - İç B-C sıfır-kutuplama tüketim sığası + + + + + + + + + + + + V + V - - - - - - Internal B-C built-in potential - İç B-C gerilimi + + A2D Level Shifter + - - - - - - Internal B-C grading coefficient - İç B-C değişim katsayısı + + 2to4 demultiplexer verilog device + - - - - - - Internal B-C punch-through voltage - İç B-C eklemi "ileri delgi" (punch-through) gerilimi + + 2to4 Demux + - - - - - - External B-C zero-bias depletion capacitance - Dış B-C sıfır-kutuplama tüketim sığası + + 3to8 demultiplexer verilog device + - - - - - - External B-C built-in potential - Dış B-C eklemi yerleşik (built-in) gerilimi + + 3to8 Demux + - - - - - - External B-C grading coefficient - Dış B-C eklemi değişim katsayısı + + 4to16 demultiplexer verilog device + - - - - - - External B-C punch-through voltage - Dış B-C eklemi "ileri delgi" (punch-through) gerilimi + + 4to16 Demux + - - - - - Partitioning factor of parasitic B-C cap - Asalak B-C sığası kısımlama çarpanı + + externally controlled voltage source + - - - - - Partitioning factor of parasitic B-E cap - Asalak B-E sığası kısımlama çarpanı + + + voltage in Volts + Volt cinsinden gerilim - - - - - - C-S zero-bias depletion capacitance - C-S sıfır-kutuplama tüketim sığası + + Externally Controlled Voltage Source + - - - - - - C-S built-in potential - İç C-S gerilimi + + EPFL-EKV MOS 2.6 verilog device + - - - - - - C-S grading coefficient - C-S değişim katsayısı + + long = 1, short = 2 + - - - - - C-S punch-through voltage - C-S "ileri delgi" (punch-through) gerilimi + length parameter + + - - - - - Low current forward transit time at VBC=0V - VBC=0V durumunda düşük akım ileri geçiş zamanı - - + - - - - - Time constant for base and B-C space charge layer width modulation - Baz ve B-C uzay yük katmanı en değişimi (genişlik modülasyonu) için zaman sabiti - - - - - - Time constant for modelling carrier jam at low VCE - Düşük VCE durumunda taşıyıcı tıkanıklığını modellemek için kullanılan zaman sabiti + + + + + m + - - - - - - Neutral emitter storage time - Tarafsız (nötr) emetör saklama (depolama) zamanı + + Width parameter + - - - - - Exponent factor for current dependence of neutral emitter storage time - Tarafsız (nötr) emetör saklama (depolama) zamanının akıma bağlılığı için üstel çarpan + parallel multiple device number + - - - - - Saturation time constant at high current densities - Yüksek akım yoğunluklarında doyum zaman sabiti + series multiple device number + - - - - - - Smoothing factor for current dependence of base and collector transit time - Baz ve kollektör geçiş zamanlarının akıma bağımlılığı için yumuşatma çarpanı + + gate oxide capacitance per unit area + - - - - - - Partitioning factor for base and collector portion - Baz ve kollektör kısımları için kısımlara ayırma çarpan + + F/m**2 + - - - - - Internal collector resistance at low electric field - Düşük elektrik alanda iç kollektör direnci + metallurgical junction depth + - - - - - Voltage separating ohmic and saturation velocity regime - Omik ve doyum hız rejimlerini ayıran gerilim değeri + channel width correction + - - - - - Internal C-E saturation voltage - İç C-E doyum akımı + channel length correction + - - - - - Collector punch-through voltage - Kollektör "ileri delgi" (punch-through) gerilimi + long channel threshold voltage + - - - - - Storage time for inverse operation - Ters-çalışma için saklama zamanı + body effect parameter + - - - - - - Total parasitic B-E capacitance - Toplam asalak B-E eklem sığası + + V**(1/2) + - - - - - - Total parasitic B-C capacitance - Toplam asalak B-C eklem sığası + + bulk Fermi potential + - - - - - Factor for additional delay time of minority charge - Azınlık yükü ek gecikme zaman çarpanı + + + transconductance parameter + ters iletkenlik (transconductance) değişkeni - - - - - - Factor for additional delay time of transfer current - Geçiş akımı ek gecikme zaman çarpanı + + + A/V**2 + - - - - Flag for turning on and off of vertical NQS effect - Dikey NQS etkisi açma kapama bayrağı + mobility reduction coefficient + - - - - - - Flicker noise coefficient - Flicker gürültü sabiti + + + + + + 1/V + 1/V - - - - - Flicker noise exponent factor - Flicker gürültüsü üstel çarpanı + mobility coefficient + - - - - - Flag for determining where to tag the flicker noise source - Flicker gürüldü kaynağının nereye koyulacağını belirleyen bayrak + + + + V/m + - - - - - - Scaling factor for collector minority charge in direction of emitter width - Emetör genişliği doğrultusundaki kollektör azınlık yükü büyüklük çarpanı + + + longitudinal critical field + - - - - - - Scaling factor for collector minority charge in direction of emitter length - Emetör uzunluğu doğrultusundaki kollektör azınlık yükü büyüklük çarpanı + + depletion length coefficient + - - - - - Bandgap voltage extrapolated to 0 K - 0 kelvinde hesaplanmış (ekstrapolasyon) bant genişliği (bandgap) gerilimi - - - - - - - - First order relative TC of parameter T0 - T0 değişkeni için birinci-derece göreceli sıcaklık katsayısı (TC) + narrow-channel effect coefficient + - - - - - - Second order relative TC of parameter T0 - T0 değişkeni için ikinci-derece göreceli sıcaklık katsayısı (TC) + + reverse short channel charge density + - - - - - - Temperature exponent for RCI0 - RCI0 için sıcaklık üsteli + + A*s/m**2 + - - - - - Relative TC of saturation drift velocity - Doyum durumunda, sürüklenme hızı göreceli sıcaklık katsayısı (TC) + characteristic length + - - - - - Relative TC of VCES - VCES için göreceli TC + threshold voltage temperature coefficient + - - - - - - Temperature exponent of internal base resistance - İç baz direncinin sıcaklık üsteli + + V/K + V/K - - - - - Temperature exponent of external base resistance - Dış baz direncinin sıcaklık üsteli + mobility temperature coefficient + - - - - - Temperature exponent of external collector resistance - Dış kollektör direnci sıcaklık üsteli + Longitudinal critical field temperature exponent + - - - - - Temperature exponent of emitter resistance - Emetör direnci sıcaklık üsteli + Ibb temperature coefficient + - - - - - - Temperature exponent of mobility in substrate transistor transit time - Alt-tabaka transistörü geçiş zamanı yer değiştirme sıcaklık üsteli + + 1/K + 1/K - - - - Effective emitter bandgap voltage - Etkin emetör bant-genişliği gerilimi - - - - - - - Effective collector bandgap voltage - Etkin kollektör bant-genişliği gerilimi - - - - - - - Effective substrate bandgap voltage - Etkin alt-tabaka bant-genişliği gerilimi + heavily doped diffusion length + - - - - Coefficient K1 in T-dependent band-gap equation - T-bağımlı bant-genişliği eşitliğindeki K1 sabiti - - - - - - - Coefficient K2 in T-dependent band-gap equation - T-bağımlı bant-genişliği eşitliğindeki K2 sabiti + drain/source diffusion sheet resistance + - - - - - Exponent coefficient in B-E junction current temperature dependence - B-E eklem akımı sıcaklık bağımlılığı üstel çarpanı + + Ohm/square + - - - - - Relative TC of forward current gain for V2.1 model - V2.1 modeli için ileri akım kazncı göreceli sıcaklık sabiti + source contact resistance + + - - - - Flag for turning on and off self-heating effect - Kendi kendini ısıtma etkisini açma kapama bayrağı - - + - - - - J/W - J/W - - - - - - - Flag for compatibility with v2.1 model (0=v2.1) - v2.1 modeli ile uyumluluk bayrağı (0=v2.1) - - - - - - - - Temperature at which parameters are specified - Değişkenlerin tanımlandığı sıcaklıik - - + + + + - - - - - Temperature change w.r.t. chip temperature for particular transistor - Temperature change w.r.t. chip temperature for particular transistor - - - - HICUM L2 v2.22 - HICUM L2 v2.22 + + + + Ohm + Ohm - - HICUM Level 0 v1.2 verilog device - HICUM Seviyesi 2 v2.1 verilog devresi {0 ?} {1.2 ?} + + drain contact resistance + - - - - reverse Early voltage (normalization volt.) + + gate to source overlap capacitance - - - - flag for turning on base related critical current + + + + + F/m - - - - Smoothing factor for the d.c. injection width + + gate to drain overlap capacitance - - - - BE charge built-in voltage for d.c. transfer current + + gate to bulk overlap capacitance - - - charge BE exponent factor for d.c. transfer current + first impact ionization coefficient - - - - BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current + + 1/m - - - TC of iqf + + second impact ionization coefficient - - - - Exponent factor for temperature dependent thermal resistance + + saturation voltage factor for impact ionization - - npn HICUM L0 v1.2 - npn HICUM L0 v1.2 {0 ?} + + area related theshold voltage mismatch parameter + - - pnp HICUM L0 v1.2 - pnp HICUM L0 v1.2 {0 ?} + + V*m + - - HICUM Level 0 v1.2g verilog device + + area related gain mismatch parameter - - high-injection roll-off current + + area related body effect mismatch parameter - - TC of iqf (bandgap coefficient of zero bias hole charge) + + sqrt(V)*m - - TC of avalanche prefactor, identical to alfav of Hicum/L2 - + + + + + + + + + + + A + A + + - TC of avalanche exponential factor, identical to alqav of Hicum/L2 - + + + + + F + F - - Emitter part coefficient of the zero bias hole charge temperature variation + + + diode relative area - - Collector part coefficient of the zero bias hole charge temperature variation + + charge partition parameter - Bandgap TC parameter of ver - + + + + + + + parameter measurement temperature + değişken ölçüm sıcaklığı - - Bandgap TC parameter of vef - + + + + + + + + Celsius + Celsius - - Specific recombination current at the BC barrier for high forward injection + + EPFL-EKV NMOS 2.6 - - npn HICUM L0 v1.2g - npn HICUM L0 v1.2g {0 ?} + + EPFL-EKV PMOS 2.6 + - - pnp HICUM L0 v1.2g - pnp HICUM L0 v1.2g {0 ?} + + equation defined device + eşitlikle tanımlanmış cihaz - - HICUM Level 0 v1.3 verilog device - HICUM Seviyesi 2 v2.1 verilog devresi {0 ?} {1.3 ?} + + type of equations + eşitliklerin çeşidi - - Flag for using third order solution for transfer current - + + number of branches + kol sayısı - - bias dependence for reverse Early voltage - + + + current equation + akım eşitliği - - Flag for turning temperature dependence of tef0 on and off - + + + charge equation + yük eşitliği - - TC of Reverse Early voltage - + + Equation Defined Device + Eşitlikle Tanımlanmış Cihaz - - TC of AVER - + + equation + eşitlik - - Bandgap difference between base and BE-junction - + + + + Equation + Eşitlik - - Frist-order TC of iqfh - + + put result into dataset + sonucu veri topluluğuna koy - - Second-order TC of iqfh + + externally driven transient simulation - - npn HICUM L0 v1.3 - npn HICUM L0 v1.3 {0 ?} + + + integration method + sürekli toplam yöntemi - - pnp HICUM L0 v1.3 - pnp HICUM L0 v1.3 {0 ?} + + + order of integration method + sürekli toplam yönteminin mertebesi - - HICUM Level 2 v2.1 verilog device - HICUM Seviyesi 2 v2.1 verilog devresi + + + initial step size in seconds + saniye cinsinden ilk adım - - Partitioning factor of parasitic B-C capacitance - Asalak B-C sığası kısımlama çarpanı + + + minimum step size in seconds + saniye cinsinden en küçük adım - - Noise factor for internal base resistance - İç baz direnci için gürültü çarpanı + + + relative tolerance of local truncation error + yerel kesme hatasının göreli hoşgörüsü - - HICUM L2 v2.1 - HICUM L2 v2.1 + + + absolute tolerance of local truncation error + yerel kesme hatasının mutlak hoşgörüsü - - HICUM Level 2 v2.23 verilog device - HICUM Seviyesi 2 v2.1 verilog devresi {2 ?} {2.23 ?} + + + overestimation of local truncation error + yerel kesme hatasının abartısı - - HICUM L2 v2.23 - HICUM L2 v2.23 {2 ?} + + + relax time step raster + gevşeme zamanı adım uzunluğu - - HICUM Level 2 v2.24 verilog device - HICUM Seviyesi 2 v2.1 verilog devresi {2 ?} {2.24 ?} + + + perform an initial DC analysis + Baslangıç için bir DC çözümlemesi gerçeklestir - - HICUM L2 v2.24 - HICUM L2 v2.24 {2 ?} + + + maximum step size in seconds + saniye cinsinden en büyük adım büyüklüğü - - hicumL2V2p31n verilog device + + External transient simulation - - Weight factor for the low current minority charge + + 1bit full adder verilog device - - Parameter describing the slope of hjEi(VBE) + + 1Bit FullAdder - - Smoothing parameter for hjEi(VBE) at high voltage + + 2bit full adder verilog device - - Time constant for modeling carrier jam at low VCE + + 2Bit FullAdder - - Barrier voltage + + gated D latch verilog device - - Normalization parameter + + Gated D-Latch - - Smoothing parameter for barrier voltage + + 4bit Gray to binary converter verilog device - - fitting factor for critical current + + 4Bit Gray2Bin - - Flag for turning on and off of correlated noise implementation - + + ground (reference potential) + toprak (referans gerilimi) - - Emitter resistance flicker noise coefficient - + + Ground + Toprak - - Emitter resistance flicker noise exponent factor - + + gyrator (impedance inverter) + jiratör (sanal direnç değilleyici) - - Bandgap difference between B and B-E junction used for hjEi0 and hf0 - + + gyrator ratio + jiratör oranı - - Temperature coefficient for ahjEi - + + Gyrator + Jiratör - - Temperature coefficient for hjEi0 + + 1bit half adder verilog device - - Temperature coefficient for Rth + + 1Bit HalfAdder - - First order relative TC of parameter Rth - + + Harmonic balance simulation + Katsıklık (Harmonik) denge benzetimi - - HICUM L2 V2.31 - + + number of harmonics + Katsıklık (harmonik) sayısı + + + + Harmonic balance + Harmonic (harmonik) denge @@ -12085,7 +7792,7 @@ Yanlış "bileşen-component" satır biçimi! - + ERROR: No file name in SPICE component "%1". HATA: SPICE bileşeni "%1" de kütük ismi yok. @@ -12508,11 +8215,15 @@ Yanlış "bileşen-component" satır biçimi! Gerilim Denetimli Akım Kaynağı - voltage controlled voltage source gerilim denetimli gerilim kaynağı + + + voltage controlled resistor + + resistance gain @@ -12547,7 +8258,7 @@ Yanlış "bileşen-component" satır biçimi! - + ERROR: No file name in %1 component "%2". HATA: %1 bileşeni "%2" de kütük ismi yok. @@ -12711,7 +8422,7 @@ Yanlış "bileşen-component" satır biçimi! - + invalid geçersiz @@ -12823,7 +8534,7 @@ Yanlış "bileşen-component" satır biçimi! - + Successfully exported @@ -12846,8 +8557,8 @@ Use PNG, JPEG or SVG graphics! - - + + verilog-a user devices @@ -12906,14 +8617,14 @@ Use PNG, JPEG or SVG graphics! - + diagrams - + paintings @@ -13031,16 +8742,16 @@ Set the Octave location on the application settings. - + - + untitled isimsiz - + Format Error: 'Painting' field is not closed! @@ -13216,17 +8927,17 @@ Bilinmeyen alan! HATA: "%1" alt-devresi yüklenemiyor. - + WARNING: Skipping library component "%1". UYARI: "%1" kütüphane bileşeni atlanıyor. - - ERROR: Cannot load library component "%1". - HATA: "%1" kütüphane bileşeni yüklenemiyor. + + ERROR: "%1": Cannot load library component "%2" from "%3" + - + WARNING: Ignore simulation component in subcircuit "%1". UYARI: "%1" alt-devresindeki benzetim bileşenini gözardı et. @@ -13236,7 +8947,7 @@ Bilinmeyen alan! - + ERROR: Only one digital simulation allowed. HATA: Sadece bir tek dijital benzetim yapılabilir. @@ -13365,11 +9076,17 @@ a substrate with lower permittivity and larger height. Cannot save settings file ! + + + Quarter wave filters do not allow low-pass nor high-pass masks + + + QucsActiveFilter - + &File &Kütük @@ -13379,7 +9096,29 @@ a substrate with lower permittivity and larger height. &Çıkış - + + &View + &Görünüm + + + + &Console + + + + + Enables/disables the filter calculation console + + + + + Console + +Enables/disables the filter calculation console + + + + &Help &Yardım @@ -13399,30 +9138,30 @@ a substrate with lower permittivity and larger height. Qt Hakkında... - - + + Passband attenuation, Ap (dB) - + Stopband attenuation, As (dB) - - Cuttof frequency, Fc (Hz) + + Cutoff frequency, Fc (Hz) - - + + Stopband frequency, Fs (Hz) - + Passband ripple Rp(dB) @@ -13432,7 +9171,7 @@ a substrate with lower permittivity and larger height. - + Filter order @@ -13482,27 +9221,61 @@ a substrate with lower permittivity and larger height. - - Calculation console + + Low Pass - - Filter topology + + General filter amplitude-frequency response - - Filter type: - Süzgeç çeşidi: + + + + Unable to implement filter with such parameters and topology +Change parameters and/or topology and try again! + + + + + + Filter calculation was successful + - LowPass + Filter calculation terminated with error! + + + + + Filter calculation terminated with error + + + + + Lower cutoff frequency, Fl (Hz) + + + + + Copyright (C) 2014, 2015 by + Çoğaltma hakkı/Telif (Ç) 2005, 2006 {2014, 2015 ?} + + + + Filter topology + Filter type: + Süzgeç çeşidi: + + + High Pass @@ -13528,62 +9301,45 @@ a substrate with lower permittivity and larger height. - + Cauer section - - General amplitude frequency response - - - - - Filter topology preview (one stage) - - - - + Filter parameters - + Transfer function and Topology - - General filter amplidure-frequency response - - - - + Filter topology preview - + Filter calculation console - + + + Ready. + Hazır. + + + Upper cutoff frequency of band-pass/band-stop filter is less than lower. Unable to implement such filter. Change parameters and try again. - - - - Unable to implement filter with such parameters and topology -Change parapeters and/or topology and try again! - - - - + Unable to use Cauer section for Chebyshev or Butterworth frequency response. Try to use another topology. @@ -13599,40 +9355,28 @@ frequency response. Try to use another topology. Function will be implemented in future version - - - -Filter calculation was sucessfull - - - - - -Filter calculation terminated with error - - Upper cutoff frequency, Fu (Hz) - - Lower cuttoff frequency, Fl (Hz) + + Transient bandwidth, TW (Hz) - - Transient bandwidth, TW (Hz) + + Error! - + Active filter design - + About... Hakkında... @@ -13644,12 +9388,7 @@ Active Filter synthesis program - - Copyright (C) 2014 by - Çoğaltma hakkı/Telif (Ç) 2005, 2006 {2014 ?} - - - + About Qt Qt Hakkında @@ -13657,7 +9396,7 @@ Active Filter synthesis program QucsApp - + Schematic Tasarım @@ -13673,42 +9412,42 @@ Active Filter synthesis program - + VHDL Sources VHDL Kaynakları - - + + Verilog Sources Verilog Kaynakları - - + + Verilog-A Sources - - + + Octave Scripts - + Spice Files - + Any File Herhangi Bir Kütük - + The schematic search path has been refreshed. @@ -13728,7 +9467,7 @@ Active Filter synthesis program Tasarılar - + New Yeni @@ -13813,13 +9552,13 @@ Active Filter synthesis program - + - + @@ -13842,7 +9581,7 @@ Active Filter synthesis program Hata - + Cannot open "%1". "%1" açılamıyor. @@ -13854,8 +9593,16 @@ Active Filter synthesis program Kütüphane bozuk. - - + + + + + Search results + + + + + @@ -13874,13 +9621,18 @@ Active Filter synthesis program Bilgi - + Default icon not found: %1.png - + + verilog-a user devices + + + + -port -uç @@ -13891,14 +9643,14 @@ Active Filter synthesis program - + The document contains unsaved changes! Belge kaydedilmemiş değişiklikler içeriyor! - + Do you want to save the changes before copying? @@ -13909,13 +9661,13 @@ Active Filter synthesis program - + &Save &Kaydet - + Copy file @@ -13949,31 +9701,31 @@ Active Filter synthesis program - + Warning Uyarı - + This will delete the file permanently! Continue ? Kütük kalıcı olarak silinecek! Devam ? - + No Hayır - + - + Yes Evet - + unknown @@ -14134,7 +9886,7 @@ Active Filter synthesis program - + @@ -14148,7 +9900,7 @@ Active Filter synthesis program Hazır. - + Creating new text editor... Yeni metin düzenleyici oluşturuluyor... @@ -14213,12 +9965,12 @@ Active Filter synthesis program - + Cancel İptal - + Cannot overwrite an open document Açık bir belge üzerine yazılamaz @@ -14233,7 +9985,7 @@ Active Filter synthesis program Tüm kütükler kaydediliyor... - + Closing file... Kütük kapatılıyor... @@ -14257,10 +10009,6 @@ Active Filter synthesis program Open examples directory... - - OK - Tamam - Printing... @@ -16212,110 +11960,6 @@ Trolltech tarafından Qt hakkında Warnings in last simulation! Press F5 Son benzetimdeki uyarılar ! için F5'e basınız - - About... - Hakkında... - - - Qucs Version - Qucs Sürümü - - - Quite Universal Circuit Simulator - Quite Universal Circuit Simulator (Tamamen Evrensel Devre Benzetici) - - - Copyright (C) - Çoğaltma hakkı (Ç) - - - by Michael Margraf - by Michael Margraf - - - Simulator by Stefan Jahn - Benzetici, Stefan Jahn tarafından - - - VHDL simulator 'FreeHDL' by Edwin Naroska and Marius Vollmer - VHDL benzetici 'FreeHDL', Edwin Naroska ve Marius Vollmer tarafından - - - Special thanks to Jens Flucke and Raimund Jacob - Jens Flucke ve Raimund Jacob' a özel teşekkürler - - - Many thanks to Mike Brinson for correcting the VHDL output - Mike Brinson' a çok teşekkürler, VHDL çıktısını düzelttiği için - - - GUI improvements by Gopala Krishna A - GUI ile ilgili iyileştirme Gopala Krishna A. tarafından yapıldı - - - Verilog-AMS interface by Helene Parruitte - Verilog-AMS arayüzü Helene Parruitte tarafından yapıldı - - - Translations: - Çevirmenler: - - - German by Stefan Jahn - Almanca, Stefan Jahn tarafından - - - Polish by Dariusz Pienkowski - Polonyaca, Dariusz Pienkowski tarafından - - - Romanian by Radu Circa - Romence, Radu Circa tarafından - - - French by Vincent Habchi, F5RCS - Fransızca, Vincent Habchi, F5RCS tarafından - - - Spanish by Jose L. Redrejo Rodriguez - İspanyolca, Jose L. Redrejo Rodriguez tarafından - - - Japanese by Toyoyuki Ishikawa - Japonca, Toyoyuki Ishikawa tarafından - - - Italian by Giorgio Luparia and Claudio Girardi - İtalyanca, Giorgio Luparia ve Claudio Girardi tarafından - - - Hebrew by Dotan Nahum - İbranice, Dotan Nahum tarafından - - - Swedish by Peter Landgren - İsveççe, Peter Landgren tarafından - - - Turkish by Onur and Ozgur Cobanoglu - Türkçe, Onur Çobanoğlu ve Özgür Çobanoğlu tarafından - - - Hungarian by Jozsef Bus - Macarca, Jozsef Bus tarafından - - - Russian by Igor Gorbounov - Rusça, Igor Gorbounov tarafından - - - Czech by Marek Straka - Çekçe Marek Straka tarafından yapıldı - - - Catalan by Antoni Subirats - Katalan Antoni Subirats tarafından yapıldı - QucsAttenuator @@ -16586,7 +12230,7 @@ Qucs için çok basit bit metin düzenleyici QucsFilter - + &File &Kütük @@ -16626,7 +12270,7 @@ Qucs için çok basit bit metin düzenleyici - + Filter type: Süzgeç çeşidi: @@ -16662,29 +12306,29 @@ Qucs için çok basit bit metin düzenleyici - + Corner frequency: Köşe sıklığı: - + Stop frequency: Bitiş sıklığı: - + Stop band frequency: Durdurma aralığı için sıklık: - - + + Pass band ripple: Geçen aralık dalgalılıgı: - + Stop band attenuation: Aralık sonu zayıflama miktarı: @@ -16754,19 +12398,19 @@ Süzgeç tasarım yazılımı - + Result: Sonuç: - + Error Hata - + Stop frequency must be greater than start frequency. Bitiş sıklığı başlangıç sıklığından büyük olmadı. @@ -16923,17 +12567,22 @@ Enables/disables the table of contents Hakkında - + Component Selection Bileşen Seçimi - - Search... - Ara... + + Search Lib Components + - + + Clear + + + + Component Bileşen @@ -16948,7 +12597,7 @@ Enables/disables the table of contents Model Göster - + About... Hakkında... @@ -16959,6 +12608,12 @@ Enables/disables the table of contents Qucs İçin Kütüphane Yöneticisi + + + Copyright (C) 2011-2015 Qucs Team + + + Copyright (C) 2005 by Michael Margraf @@ -16967,7 +12622,7 @@ Enables/disables the table of contents - + QucsLib Help QucsLib Yardım @@ -16987,14 +12642,17 @@ Enables/disables the table of contents Model - - Search result - Arama Sonucu + + + + + Search results + - + - + @@ -17003,13 +12661,13 @@ Enables/disables the table of contents Hata - + Cannot open "%1". "%1" açılamıyor. - + @@ -17017,21 +12675,6 @@ Enables/disables the table of contents Library is corrupt. Kütüphane bozuk. - - - Search Library Component - Kütüphane Bileşeni Ara - - - - Result - Sonuç - - - - No appropriate component found. - Uygun bileşen bulunamadı. - QucsSettingsDialog @@ -18047,7 +13690,7 @@ Bu tasarının simgesini düzenler - + Error Hata @@ -18065,7 +13708,7 @@ Set the admsXml location on the application settings. - + ERROR: Cannot create library file "%s". HATA: "%s" kütüphanesi oluşturulamıyor. @@ -18074,83 +13717,46 @@ Set the admsXml location on the application settings. SearchDialog - - - - Dialog - - - - Text to search for Aranacak metin - - - - Text to replace with Yer degistirilecek metin - - - - Ask before replacing Yer degistirmeden önce sor - - - - Case sensitive Büyük/Küçük harfe hassas - - - - Whole words only Yalnızca tüm kelimeler - - - - Search backwards Geriye doğru ara - - - - Next - - - - - Close Kapat @@ -18164,31 +13770,6 @@ Set the admsXml location on the application settings. Search Text Metin Ara - - - The search result contains all components whose -name contains the search string. All libraries -are included in the search. - Arama sonuçları, arama metninin -içerdiği tüm bileşenleri içerir. -Bütün kütüphaneler aranır. - - - - Search string: - Aranan katar: - - - - Search - Ara - - - - - Search result - Arama Sonucu - SettingsDialog @@ -18470,12 +14051,6 @@ Bütün kütüphaneler aranır. Simulation aborted by the user! - - Errors: -------- - Hatalar: --------- - SpiceDialog @@ -18638,7 +14213,7 @@ Bütün kütüphaneler aranır. SymbolWidget - + Symbol: Simge: @@ -18647,6 +14222,13 @@ Bütün kütüphaneler aranır. ! Drag n'Drop me ! !Beni Sürükle Ve Bırak! + + + Warning: Symbol '%1' missing in Qucs Library. +Drag and Drop may still work. +Please contact the developers. + + TextDoc diff --git a/qucs/translations/qucs_uk.ts b/qucs/translations/qucs_uk.ts index f89c63906c..2d7fcc7dfa 100644 --- a/qucs/translations/qucs_uk.ts +++ b/qucs/translations/qucs_uk.ts @@ -3529,62 +3529,6 @@ Resistor color code computation program - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - @@ -3740,10 +3684,6 @@ Resistor color code computation program - - - - polarity @@ -3948,10 +3888,6 @@ Resistor color code computation program - - - - @@ -4092,5709 +4028,1480 @@ Resistor color code computation program З'єднувальний провідник - - bsim3v34nMOS verilog device - + + + + + + + + + + + simulation temperature + температура моделювання + + + + capacitor + конденсатор + capacitance in Farad + ємність в фарадах + + + initial voltage for transient simulation + початкова напруга для моделювання перехідних процесів + + + + + + + + schematic symbol + схемне позначення + + + + Capacitor + Конденсатор + + + + current controlled current source + джерело струму, кероване струмом + + + + + + forward transfer factor + коефіцієнт прямої передачі + + + + + + + + + + + + + + + delay time + час затримки + + + + Current Controlled Current Source + Джерело струму, кероване струмом + + + + current controlled voltage source + джерело напруги, кероване струмом + + + + Current Controlled Voltage Source + Джерело напруги, кероване струмом + + + + circulator + циркулятор + + + + reference impedance of port 1 + опорний повний опір виводу 1 + + + reference impedance of port 2 + опорний повний опір виводу 2 + + + reference impedance of port 3 + опорний повний опір виводу 3 + + + + Circulator + Циркулятор + + + + coaxial transmission line + коаксіальна лінія передачі + + + + + relative permittivity of dielectric + відносна проникність діалектрика + + + + + specific resistance of conductor + питомий опір провідника + + + + + relative permeability of conductor + відносна проникність провідника + + + inner diameter of shield + внутрішній діаметр екрана + + + diameter of inner conductor + діаметр внутрішнього провідника + + + + mechanical length of the line + механічна довжина лінії + + + + + + loss tangent + тангенс кута діелектричних втрат + + + + Coaxial Line + Коаксіальна лінія + + + + 1bit comparator verilog device + + + + + 1Bit Comparator + + + + + 2bit comparator verilog device + + + + + 2Bit Comparator + + + + + 4bit comparator verilog device + + + + + 4Bit Comparator + + + + + number of input ports + число входів + + - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - simulation temperature - температура моделювання - - - - bsim3v34nMOS - - - - - bsim3v34pMOS verilog device - - - - - bsim3v34pMOS - - - - - bsim4v30nMOS verilog device - - - - - bsim4v30nMOS - - - - - bsim4v30pMOS verilog device - - - - - bsim4v30pMOS - - - - - capacitor - конденсатор - - - - capacitance in Farad - ємність в фарадах - - - - initial voltage for transient simulation - початкова напруга для моделювання перехідних процесів - - - - - - - - - schematic symbol - схемне позначення - - - - Capacitor - Конденсатор - - - - current controlled current source - джерело струму, кероване струмом - - - - - - forward transfer factor - коефіцієнт прямої передачі - - - - - - - - - - - - - - - delay time - час затримки - - - - Current Controlled Current Source - Джерело струму, кероване струмом - - - - current controlled voltage source - джерело напруги, кероване струмом - - - - Current Controlled Voltage Source - Джерело напруги, кероване струмом - - - - circulator - циркулятор - - - - reference impedance of port 1 - опорний повний опір виводу 1 - - - - reference impedance of port 2 - опорний повний опір виводу 2 - - - - reference impedance of port 3 - опорний повний опір виводу 3 - - - - Circulator - Циркулятор - - - - coaxial transmission line - коаксіальна лінія передачі - - - - - relative permittivity of dielectric - відносна проникність діалектрика - - - - - - specific resistance of conductor - питомий опір провідника - - - - - - relative permeability of conductor - відносна проникність провідника - - - - inner diameter of shield - внутрішній діаметр екрана - - - - diameter of inner conductor - діаметр внутрішнього провідника - - - - - mechanical length of the line - механічна довжина лінії - - - - - - - loss tangent - тангенс кута діелектричних втрат - - - - Coaxial Line - Коаксіальна лінія - - - - 1bit comparator verilog device - - - - - 1Bit Comparator - - - - - 2bit comparator verilog device - - - - - 2Bit Comparator - - - - - 4bit comparator verilog device - - - - - 4Bit Comparator - - - - - number of input ports - число входів - - - - - - - voltage of high level - напруга високого рівня - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Error - Помилка - - - - Format Error: -Wrong line start! - Помилка формату: -Невірний початок рядку! - - - - Format Error: -Unknown component! -%1 - -Do you make use of loadable components? - - - - - Format Error: -Wrong 'component' line format! - Помилка формату: -Невірний формат рядку у 'component'! - - - - coplanar line - копланарна лінія - - - - - - - - - - - - - - name of substrate definition - назва підкладки - - - - - - - - - - - width of the line - ширина лінії - - - - - - - width of a gap - ширина зазору - - - - - - - length of the line - довжина лінії - - - - - - - material at the backside of the substrate - матеріал заднього боку підкладки - - - - use approximation instead of precise equation - використовувати наближення замість точного рівняння - - - - Coplanar Line - Копланарна лінія - - - - ideal coupler - ідеальний пристрій зв'язку - - - - coupling factor - коефіцієнт зв'язку - - - - phase shift of coupling path in degree - фазовий зсув зв'язкового шляху в градусах - - - - Coupler - Пристрій зв'язку - - - - coplanar gap - розрив копланарної лінії - - - - width of gap between the two lines - ширина проміжку між двома лініями - - - - Coplanar Gap - Розрив копланарної лінії - - - - coplanar open - розімкнута копланарна лінія - - - - width of gap at end of line - ширина розриву на кінці лінії - - - - Coplanar Open - Розімкнута копланарна лінія - - - - coplanar short - замкнута копланарна лінія - - - - Coplanar Short - Замкнена копланарна лінія - - - - coplanar step - стрибок ширини копланарної лінії - - - - - - width of line 1 - ширина лінії 1 - - - - - - width of line 2 - ширина лінії 2 - - - - distance between ground planes - відстань між заземленими площинами - - - - Coplanar Step - Стрибок ширини копланарної лінії - - - - coupled transmission lines - - - - - characteristic impedance of even mode - - - - - characteristic impedance of odd mode - - - - - - - - electrical length of the line - електрична довжина лінії - - - - relative dielectric constant of even mode - - - - - relative dielectric constant of odd mode - - - - - attenuation factor per length of even mode - - - - - attenuation factor per length of odd mode - - - - - Coupled Transmission Line - - - - - D flip flop with asynchron reset - D-трігер з асинхронним скиданням - - - - D-FlipFlop - D-трігер - - - - - dc simulation - моделювання в постійному струмі - - - - - - - relative tolerance for convergence - відносний допуск для конвергенції - - - - - - - absolute tolerance for currents - абсолютний допуск для струмів - - - - - - - absolute tolerance for voltages - абсолютний допуск для напруг - - - - put operating points into dataset - помістити робочі точки в набір даних - - - - - - - maximum number of iterations until error - максимальну кількість ітерацій до виникнення помилки - - - - save subcircuit nodes into dataset - збереження результатів моделювання і тимчасових робочих точок у традиційному наборі даних - - - - preferred convergence algorithm - кращий алгоритм збіжності - - - - - - method for solving the circuit matrix - метод рішення матриці схеми - - - - dc block - розв'язка - - - - dc Block - розв'язка від постійного струму - - - - dc feed - подача постійного струму - - - - dc Feed - підвід постійного струму - - - - D flip flop with set and reset verilog device - - - - - - - - cross coupled gate transfer function high scaling factor - - - - - - - - cross coupled gate transfer function low scaling factor - - - - - - - - cross coupled gate delay - - - - - D-FlipFlop w/ SR - - - - - diac (bidirectional trigger diode) - - - - - - (bidirectional) breakover voltage - - - - - (bidirectional) breakover current - - - - - - - parasitic capacitance - - - - - - - - - emission coefficient - коефіцієнт емісії - - - - - - intrinsic junction resistance - - - - - Diac - - - - - - digital simulation - цифрове моделювання - - - - type of simulation - тип моделювання - - - - duration of TimeList simulation - тривалість моделювання за списком моментів часу - - - - netlist format - формат netlist - - - - - digital source - цифрове джерело - - - - - number of the port - номер виводу - - - - initial output value - початкові вивідні значення - - - - list of times for changing output value - моменти часу зміни вивідного значення - - - - diode - діод - - - - - - zero-bias junction capacitance - ємність переходу при нульовому зміщенні - - - - - - - - grading coefficient - коефіцієнт неідеальності - - - - - - - junction potential - потенціал переходу - - - - linear capacitance - лінійна ємність - - - - recombination current parameter - рекомбінаційний струм - - - - emission coefficient for Isr - коефіцієнт ідеальності діода для Isr - - - - ohmic series resistance - омічний послідовний опір - - - - - - transit time - час переходу - - - - high-injection knee current (0=infinity) - Граничний струм виводу інжекції (0=бесконечность) - - - - - - reverse breakdown voltage - зворотня напруга пробою - - - - - - current at reverse breakdown voltage - струм при зворотній напрузі пробою - - - - Bv linear temperature coefficient - лінійний температурний коефіцієнт Bv - - - - Rs linear temperature coefficient - лінійний температурний коефіцієнт Rs - - - - Tt linear temperature coefficient - лінійний температурний коефіцієнт Tt - - - - Tt quadratic temperature coefficient - квадратичний температурний коефіцієнт Tt - - - - M linear temperature coefficient - лінійний температурний коефіцієнт M - - - - M quadratic temperature coefficient - квадратичний температурний коефіцієнт M - - - - - default area for diode - площа за замовчуванням для діода - - - - Diode - Діод - - - - data voltage level shifter (digital to analogue) verilog device - - - - - - voltage level - - - - - - time delay - - - - - D2A Level Shifter - - - - - data voltage level shifter (analogue to digital) verilog device - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - V - - - - - A2D Level Shifter - - - - - 2to4 demultiplexer verilog device - - - - - 2to4 Demux - - - - - 3to8 demultiplexer verilog device - - - - - 3to8 Demux - - - - - 4to16 demultiplexer verilog device - - - - - 4to16 Demux - - - - - externally controlled voltage source - - - - - - voltage in Volts - напруга у вольтах - - - - Externally Controlled Voltage Source - - - - - EPFL-EKV MOS 2.6 verilog device - - - - - long = 1, short = 2 - - - - - length parameter - - - - - - - - - - - - - m - - - - - Width parameter - - - - - parallel multiple device number - - - - - series multiple device number - - - - - gate oxide capacitance per unit area - - - - - F/m**2 - - - - - metallurgical junction depth - - - - - channel width correction - - - - - channel length correction - - - - - long channel threshold voltage - - - - - body effect parameter - - - - - V**(1/2) - - - - - bulk Fermi potential - - - - - - - transconductance parameter - передатна провідність - - - - - A/V**2 - - - - - mobility reduction coefficient - - - - - - - - - - - - - 1/V - - - - - mobility coefficient - - - - - - - V/m - - - - - - longitudinal critical field - - - - - depletion length coefficient - - - - - narrow-channel effect coefficient - - - - - reverse short channel charge density - - - - - A*s/m**2 - - - - - characteristic length - - - - - threshold voltage temperature coefficient - - - - - - - - - - - - - V/K - - - - - mobility temperature coefficient - - - - - Longitudinal critical field temperature exponent - - - - - Ibb temperature coefficient - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1/K - - - - - heavily doped diffusion length - - - - - drain/source diffusion sheet resistance - - - - - Ohm/square - - - - - source contact resistance - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Ohm - Ом - - - - drain contact resistance - - - - - gate to source overlap capacitance - - - - - - - - F/m - - - - - gate to drain overlap capacitance - - - - - gate to bulk overlap capacitance - - - - - first impact ionization coefficient - - - - - 1/m - - - - - second impact ionization coefficient - - - - - saturation voltage factor for impact ionization - - - - - area related theshold voltage mismatch parameter - - - - - V*m - - - - - area related gain mismatch parameter - - - - - area related body effect mismatch parameter - - - - - sqrt(V)*m - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - F - - - - - - diode relative area - - - - - charge partition parameter - - - - - - - - - - - parameter measurement temperature - температура, при якій обмірювались параметри моделі - - - - - - - - - - Celsius - - - - - EPFL-EKV NMOS 2.6 - - - - - EPFL-EKV PMOS 2.6 - - - - - equation defined device - заданий рівнянням пристрій - - - - type of equations - тип рівнянь - - - - number of branches - число розгалужень - - - - - current equation - рівняння струму - - - - - charge equation - рівняння заряду - - - - Equation Defined Device - Заданий рівнянням пристрій - - - - equation - рівняння - - - - - - Equation - Управління - - - - put result into dataset - помістити результат в набір даних - - - - externally driven transient simulation - - - - - - integration method - метод інтегрування - - - - - order of integration method - порядок методу інтегрування - - - - - initial step size in seconds - початковий розмір кроку в секундах - - - - - minimum step size in seconds - мінімальний розмір кроку в секундах - - - - - relative tolerance of local truncation error - відносний допуск на локальні помилки перерізу - - - - - absolute tolerance of local truncation error - абсолютний допуск на локальні помилки перерізу - - - - - overestimation of local truncation error - верхня межа переоцінки помилок перерізу - - - - - relax time step raster - допустимі неточності кроків часу - - - - - perform an initial DC analysis - виконати початковий аналіз постійномго струму - - - - - maximum step size in seconds - максимальна величина кроку в секундах - - - - External transient simulation - - - - - 1bit full adder verilog device - - - - - 1Bit FullAdder - - - - - 2bit full adder verilog device - - - - - 2Bit FullAdder - - - - - gated D latch verilog device - - - - - Gated D-Latch - - - - - 4bit Gray to binary converter verilog device - - - - - 4Bit Gray2Bin - - - - - ground (reference potential) - заземлення (опорний потенціал) - - - - Ground - Земля - - - - gyrator (impedance inverter) - гіратор (перетворювач повного опору) - - - - gyrator ratio - коефіцієнт гірації - - - - Gyrator - Гіратор - - - - 1bit half adder verilog device - - - - - 1Bit HalfAdder - - - - - Harmonic balance simulation - Моделювання гармонійного балансу - - - - number of harmonics - число гармонік - - - - Harmonic balance - Гармонічний баланс - - - - HBT model by Ferdinand-Braun-Institut (FBH), Berlin - Модель ГБТ Інституту високочастотної техніки імені Фердинанда Брауна (FBH) у Берліні - - - - - - - Ignored - Ігноровано - - - - Device operating temperature, Celsius - Робоча температура пристрою, градуси Цельсія - - - - Thermal resistance, K/W - Тепловий опір, К/Вт - - - - - - - - - - - - - Thermal capacitance - Теплоємність - - - - Scaling factor, number of emitter fingers - Масштабний коефіцієнт, число емітерних зон - - - - Length of emitter finger, m - Довжина емітерної зони, м - - - - Width of emitter finger, m - Ширина емітерної зони, м - - - - Forward saturation current density, A/um^2 - Щільність струму насичення у прямому включенні, А/мкм² - - - - Forward current emission coefficient - Коефіцієнт емісії струму у прямому включенні - - - - Forward thermal activation energy, V, (0 == disables temperature dependence) - Теплова енергія активації у прямому включенні, В, (0 == відключення температурної залежності) - - - - B-E leakage saturation current density, A/um^2 - Щільність струму виструму Б-Е як насичення, А/мкм² - - - - B-E leakage emission coefficient - Коефіцієнт емісії для Б-Е струму виструму - - - - Limiting resistor of B-E leakage diode, Ohm - Обмежувальний резистор діода виструму Б-Е, Ом - - - - B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - Теплова енергія активації виструму Б-Е, В, (0 == відключення температурної залежності) - - - - 2nd B-E leakage saturation current density, A/um^2 - Щільність струму виструму 2-го переходу Б-Е як насичення, А/мкм² - - - - 2nd B-E leakage emission coefficient - Коефіцієнт емісії для струму виструму 2-го переходу Б-Е - - - - 2nd Limiting resistor of B-E leakage diode, Ohm - 2-й обмежувальний резистор діода виструму Б-Е, Ом - - - - 2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - 2-га теплова енергія активації виструму Б-Е, В, (0 == відключення температурної залежності) - - - - Reverse saturation current density, A/um^2 - Щільність зворотного поструму насичення, А/мкм² - - - - Reverse current emission coefficient - Коефіцієнт емісії зворотного поструму - - - - Reverse thermal activation energy, V, (0 == disables temperature dependence) - Теплова енергія активації у протилежному включенні, В, (0 == відключення температурної залежності) - - - - Fraction of Cjc that goes to internal base node - Частка Cjc, яка припадає на внутрішній вивід бази - - - - B-C leakage saturation current density, A/um^2 (0. switches off diode) - Щільність струму виструму Б-К як насичення, А/мкм² (0. відключає діод) - - - - B-C leakage emission coefficient (0. switches off diode) - Коефіцієнт емісії для Б-К струму виструму (0. відключає діод) - - - - Limiting resistor of B-C leakage diode, Ohm - Обмежувальний резистор діода виструму Б-К, Ом - - - - B-C leakage thermal activation energy, V, (0 == disables temperature dependence) - Теплова енергія активації виструму Б-К, В, (0 == відключення температурної залежності) - - - - Ideal forward beta - Ідеальний прямий коефіцієнт передачі струму - - - - Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence) - Температурний коефіцієнт посилення струму у прямому включенні, -1/К, (0 == відключення температурної залежності) - - - - Ideal reverse beta - Ідеальний зворотний коефіцієнт передачі струму - - - - Forward Early voltage, V, (0 == disables Early Effect) - Пряма напруга Эрли, В, (0 == відключення ефекту Эрли) - - - - Reverse Early voltage, V, (0 == disables Early Effect) - Зворотня напруга Эрли, В, (0 == відключення ефекту Эрли) - - - - Forward high-injection knee current, A, (0 == disables Webster Effect) - Граничний прямий струм високої інжекції, А, (0 == відключення ефекту Вебстера) - - - - Reverse high-injection knee current, A, (0 == disables Webster Effect) - Граничний зворотний струм за високої інжекції, А, (0 == відключення ефекту Вебстера) - - - - C-E breakdown exponent, (0 == disables collector break-down) - Показник пробою К-Е, (0 == відключення пробою колектора) - - - - C-E breakdown voltage, V, (0 == disables collector break-down) - Напруга пробою К-Е, В, (0 == відключення пробою коллектора) - - - - C-E breakdown factor, (0 == disables collector break-down) - Чинник пробою К-Е, (0 == відключення пробою колектора) - - - - B-E breakdown voltage, V, (0 == disables emitter break-down) - Напруга пробою Б-Е, В, (0 == відключення пробою емітера) - - - - Ideal reverse transit time, s - Ідеальний час прольоту при інверсному включенні, сек - - - - Extrinsic BC diffusion capacitance, F - Зовнішня дифузійна ємність бази, Ф - - - - Ideal forward transit time, s - Ідеальний час прольоту у прямому включенні, сек - - - - Temperature coefficient of forward transit time - Температурний коефіцієнт часу прольоту у прямому включенні - - - - Excess transit time coefficient at base push-out - Коефіцієнт додаткового часу прольоту у результаті розширення бази - - - - Smoothing parameter for Thcs - Зглажуючий параметр для Thcs - - - - B-E zero-bias depletion capacitance, F/um^2 - Ємність Б-Е при нульовому зміщення, Ф/мкм² - - - - B-E junction exponential factor - Множник експоненти для Б-Е - - - - B-E junction built-in potential, V - Контактна різницю потенціалів Б-Е, У - - - - B-C zero-bias depletion capacitance, F/um^2 - Ємність Б-К при нульовому зміщенні, Ф/мкм² - - - - B-C junction exponential factor - Множник експоненти для Б-К - - - - B-C junction built-in potential, V - Контактна різницю потенціалів Б-К, У - - - - not used - немає - - - - Minimum B-C depletion capacitance (Vbc dependence), F/um^2 - Мінімальна ємність Б-К (залежність від Vbc), Ф/мкм² - - - - Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction) - Струм колектора, коли Cbc сягає Cmin, А/мкм² (0 == відключення зменшення Cbc) - - - - Fraction of Cmin, lower limit of BC capacitance (Ic dependence) - Частка Cmin, нижня межа ємності БК (залежність від Ic) - - - - Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out) - Початок розширення бази при низьких напругах, Ом*мкм² (0 == відключення пропичатування) - - - - Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out) - Початок розширення бази при високих напругах, А/мкм² (0 == відключення пропичатування бази) - - - - Slope of Jk at high currents , Ohm*um^2 - Нахил Jk при великих струмах, Ом*мкм² - - - - Voltage shift of base push-out onset, V - Зрушення напруги при початку розширення бази, У - - - - Collector resistance, Ohm/finger - Опір колектора, Ом/полоска - - - - Emitter resistance, Ohm/finger - Опір емітера, Ом/полоска - - - - Extrinsic base resistance, Ohm/finger - Зовнішній опір бази, Ом/полоска - - - - Inner Base ohmic resistance, Ohm/finger - Внутрішній омічний опір бази, Ом/полоска - - - - Collector inductance, H - Індуктивність колектора, Гн - - - - Emitter inductance, H - Індуктивність емітера, Гн - - - - Base inductance, H - Індуктивність бази, Гн - - - - Extrinsic B-C capacitance, F - Зовнішня ємність Б-К, Ф - - - - Extrinsic base capacitance, F - Зовнішня ємність бази, Ф - - - - Extrinsic collector capacitance, F - Зовнішня ємність колектора, Ф - - - - - Flicker-noise coefficient - Коефіцієнт 1/f-шуму - - - - - Flicker-noise exponent - Показник ступеня 1/f-шуму - - - - - Flicker-noise frequency exponent - Частотная залежність 1/f-шуму - - - - Burst noise coefficient - Коефіцієнт дробового шуму - - - - Burst noise exponent - Показник ступеня дробового шуму - - - - Burst noise corner frequency, Hz - Гранична частота дробового шуму, гц + + + + voltage of high level + напруга високого рівня + + - Ambient temperature at which the parameters were determined - Температура довкілля, при якій визначено параметри моделі - - - - FBH HBT - FBH ГБТ - - - - HICUM Level 0 v1.12 verilog device - HICUM Level 2 v2.1 Verilog-модель {0 ?} {1.12 ?} - - + + + + + + + + + + + - - - - (Modified) saturation current - - - - - - - - Non-ideality coefficient of forward collector current - - - - - - - - Non-ideality coefficient of reverse collector current - - - - - - - - - - - - - - - - forward Early voltage (normalization volt.) - - - - - - - - forward d.c. high-injection roll-off current - - - - - - - - inverse d.c. high-injection roll-off current - - - - - - - - high-injection correction current - - - - - - - high-injection correction factor - - - - - - - - BE saturation current - - - - - - - - BE non-ideality factor - - - - - - - - BE recombination saturation current - - - - - - - - BE recombination non-ideality factor - - - - - - - - BC saturation current - - - - - - - - BC non-ideality factor - - - - - - - - Zero-bias BE depletion capacitance - - - - - - - - BE built-in voltage - - - - - - - - BE exponent factor - - - - - - - - Ratio of maximum to zero-bias value - + + + + + + + + + + + + + + + + + + Error + Помилка - - - - - low current transit time at Vbici=0 - + + Format Error: +Wrong line start! + Помилка формату: +Невірний початок рядку! - - - - - Base width modulation contribution + + Format Error: +Unknown component! +%1 + +Do you make use of loadable components? - - - - - SCR width modulation contribution - + + Format Error: +Wrong 'component' line format! + Помилка формату: +Невірний формат рядку у 'component'! - - - - - Storage time in neutral emitter - + + coplanar line + копланарна лінія - - - - - Exponent factor for emitter transit time - + + + + + + + + + + + + name of substrate definition + назва підкладки - - - - Saturation time at high current densities - - - - - - - - Smoothing factor for current dependence - + + + + + + + + width of the line + ширина лінії - - - - Storage time at inverse operation - + + + + width of a gap + ширина зазору - - - - - Low-field collector resistance under emitter - + + + + + length of the line + довжина лінії - - - - - Voltage dividing ohmic and satur.region - + + + + + material at the backside of the substrate + матеріал заднього боку підкладки - - - - - - - - Punch-through voltage - - - - - - - - Saturation voltage - + use approximation instead of precise equation + використовувати наближення замість точного рівняння - - - - - Total zero-bias BC depletion capacitance - + + Coplanar Line + Копланарна лінія - - - - - BC built-in voltage - + + ideal coupler + ідеальний пристрій зв'язку - - - - - BC exponent factor - + + coupling factor + коефіцієнт зв'язку - - - - Punch-through voltage of BC junction - - - - - - - - Zero-bias external BC depletion capacitance - - - - - - - - External BC built-in voltage - + phase shift of coupling path in degree + фазовий зсув зв'язкового шляху в градусах - - - - - External BC exponent factor - + + Coupler + Пристрій зв'язку - - - - - Split factor = Cjci0/Cjc0 - + + coplanar gap + розрив копланарної лінії - - - - - Internal base resistance at zero-bias - + + width of gap between the two lines + ширина проміжку між двома лініями - - - - - Geometry factor - + + Coplanar Gap + Розрив копланарної лінії - - - - - - - - - - External base series resistance - Зовнішній послідовний опір бази + + coplanar open + розімкнута копланарна лінія - - - - - - - - - - Emitter series resistance - Послідовний опір емітера + + width of gap at end of line + ширина розриву на кінці лінії - - - - - - - - - - External collector series resistance - Зовнішнє послідовний опір колектора + + Coplanar Open + Розімкнута копланарна лінія - - - - - - - - - - Substrate transistor transfer saturation current - Передаточный струм насичення транзистора на підкладці + + coplanar short + замкнута копланарна лінія - - - - - Substrate transistor transfer current non-ideality factor - + + Coplanar Short + Замкнена копланарна лінія - - - - - SC saturation current - + + coplanar step + стрибок ширини копланарної лінії - - - - - SC non-ideality factor - + + + + width of line 1 + ширина лінії 1 - - - - Zero-bias SC depletion capacitance - - - - - - - - SC built-in voltage - - - - - - - - External SC exponent factor - + + + width of line 2 + ширина лінії 2 - - - - SC punch-through voltage - + distance between ground planes + відстань між заземленими площинами - - - - - Collector-base isolation (overlap) capacitance - + + Coplanar Step + Стрибок ширини копланарної лінії - - - - - Emitter-base oxide capacitance + + coupled transmission lines - - - - - Exponent factor + + characteristic impedance of even mode - - - - Prefactor + characteristic impedance of odd mode - - - - - M^(1-AF) - + + + + + electrical length of the line + електрична довжина лінії - - - - flicker noise exponent factor + relative dielectric constant of even mode - - - - Bandgap-voltage + relative dielectric constant of odd mode - - - - - Effective emitter bandgap-voltage + + attenuation factor per length of even mode - - - - - Effective collector bandgap-voltage + + attenuation factor per length of odd mode - - - - - Effective substrate bandgap-voltage + + Coupled Transmission Line - - - - - Coefficient K1 in T-dependent bandgap equation - + + D flip flop with asynchron reset + D-трігер з асинхронним скиданням - - - - - Coefficient K2 in T-dependent bandgap equation - + + D-FlipFlop + D-трігер - - - - - Frist-order TC of tf0 - + + + dc simulation + моделювання в постійному струмі - - - - - Second-order TC of tf0 - + + + + + relative tolerance for convergence + відносний допуск для конвергенції - - - - - - 1/K^2 - + + + + + absolute tolerance for currents + абсолютний допуск для струмів - - - - - - - - Exponent coefficient in transfer current temperature dependence - + + + + absolute tolerance for voltages + абсолютний допуск для напруг - - - - Exponent coefficient in BE junction current temperature dependence - + put operating points into dataset + помістити робочі точки в набір даних - - - - - TC of epi-collector diffusivity - + + + + + maximum number of iterations until error + максимальну кількість ітерацій до виникнення помилки - - - - Relative TC of satur.drift velocity - + save subcircuit nodes into dataset + збереження результатів моделювання і тимчасових робочих точок у традиційному наборі даних - - - - Relative TC of vces - + preferred convergence algorithm + кращий алгоритм збіжності - - - - TC of internal base resistance - + + + method for solving the circuit matrix + метод рішення матриці схеми - - - - - TC of external base resistance - + + dc block + розв'язка - - - - - TC of external collector resistance - + + dc Block + розв'язка від постійного струму - - - - - TC of emitter resistances - + + dc feed + подача постійного струму - - - - TC of avalanche prefactor - + + dc Feed + підвід постійного струму - - - - TC of avalanche exponential factor + + D flip flop with set and reset verilog device - - - - Flag for self-heating calculation + + + + cross coupled gate transfer function high scaling factor - - - - - - - - - Thermal resistance - Тепловий опір - - - - - - - - - - - K/W - - - - - - - - Ws/K + + + + cross coupled gate transfer function low scaling factor - - - - Temperature for which parameters are valid + + + + cross coupled gate delay - - - - - - - - - C + + D-FlipFlop w/ SR - - - - - Temperature change for particular transistor + + diac (bidirectional trigger diode) - - - - - - - - - K + + + (bidirectional) breakover voltage - - npn HICUM L0 v1.12 + + (bidirectional) breakover current - - pnp HICUM L0 v1.12 + + + + parasitic capacitance - - HICUM Level 2 v2.22 verilog device - HICUM Level 2 v2.1 Verilog-модель {2 ?} {2.22 ?} - - - - - - - - GICCR constant - Константа GICCR - - - - - - - A^2s - + + + + + + emission coefficient + коефіцієнт емісії - - - - - Zero-bias hole charge - Заряд дірок при нульовому зміщенні - - - - - - - - - - - Coul + + + intrinsic junction resistance - - - - - - High-current correction for 2D and 3D effects - Поправка для великих струмів для 2D- і 3D-ефектів + + Diac + - - - - - - Emitter minority charge weighting factor in HBTs - Ваговий чинник емітерних неосновних носіїв заряду в ГБТ + + + digital simulation + цифрове моделювання - - - - - - Collector minority charge weighting factor in HBTs - Ваговий чинник колекторних неосновних носіїв заряду в ГБТ + + type of simulation + тип моделювання - - - - - B-E depletion charge weighting factor in HBTs - Ваговий чинник заряду Б-Е переходу в ГБТ + duration of TimeList simulation + тривалість моделювання за списком моментів часу - - - - - B-C depletion charge weighting factor in HBTs - Ваговий чинник заряду Б-К переходу в ГБТ + netlist format + формат netlist - - - - - - Internal B-E saturation current - Внутрішній Б-Е струм насичення + + + digital source + цифрове джерело - - - - - - Internal B-E current ideality factor - Коефіцієнт ідеальності внутрішнього Б-Е струму + + + number of the port + номер виводу - - - - - Internal B-E recombination saturation current - Внутрішній Б-Е рекомбінаційний струм насичення - - - - - - - - Internal B-E recombination current ideality factor - Коефіцієнт ідеальності внутрішнього Б-Е рекомбинационного струму + initial output value + початкові вивідні значення - - - - - Peripheral B-E saturation current - Периферійний струм насичення Б-Е переходу - - - - - - - - Peripheral B-E current ideality factor - Коефіцієнт ідеальності Б-Е периферійного струму + list of times for changing output value + моменти часу зміни вивідного значення - - - - - - Peripheral B-E recombination saturation current - Периферійний Б-Е рекомбінаційний струм насичення + + diode + діод - - - - - - Peripheral B-E recombination current ideality factor - Коефіцієнт ідеальності периферійного Б-Е рекомбинационного струму + + + + zero-bias junction capacitance + ємність переходу при нульовому зміщенні - - - - - Non-ideality factor for III-V HBTs - Коефіцієнт неідеальності для III-V ГБТ + + + + + grading coefficient + коефіцієнт неідеальності - - - - Base current recombination time constant at B-C barrier for high forward injection - - - - - - - - - Internal B-C saturation current - Внутрішній Б-К струм насичення + + + + junction potential + потенціал переходу - - - - - - Internal B-C current ideality factor - Коефіцієнт ідеальності внутрішнього Б-К струму + + linear capacitance + лінійна ємність - - - - - External B-C saturation current - Зовнішній Б-К струм насичення - - - - - - - - External B-C current ideality factor - Коефіцієнт ідеальності зовнішнього Б-К струму + recombination current parameter + рекомбінаційний струм - - - - - B-E tunneling saturation current - Б-Е тунельний струм насичення - - - - - - - - Exponent factor for tunneling current - Показник ступеня для тунельного струму + emission coefficient for Isr + коефіцієнт ідеальності діода для Isr - - - - Specifies the base node connection for the tunneling current - + ohmic series resistance + омічний послідовний опір - - - - - Avalanche current factor - Чинник лавинного струму - - - - - - - - Exponent factor for avalanche current - Показник ступеня для лавинного струму + + + transit time + час переходу - - - - - - Relative TC for FAVL - Відносний температурний коефіцієнт для FAVL + + high-injection knee current (0=infinity) + Граничний струм виводу інжекції (0=бесконечность) - - - - - - Relative TC for QAVL - Відносний температурний коефіцієнт для QAVL + + + + reverse breakdown voltage + зворотня напруга пробою - - - - - - Zero bias internal base resistance - Внутрішній опір бази при нульовому зміщенні + + + + current at reverse breakdown voltage + струм при зворотній напрузі пробою - - - - - - Factor for geometry dependence of emitter current crowding - Чинник геометричної залежності витіснення емітерного струму + + Bv linear temperature coefficient + лінійний температурний коефіцієнт Bv - - - - - Correction factor for modulation by B-E and B-C space charge layer - Поправочний коєфіцієнт для модуляції Б-Е і Б-К шару просторового заряду + Rs linear temperature coefficient + лінійний температурний коефіцієнт Rs - - - - - Ratio of HF shunt to total internal capacitance (lateral NQS effect) - Ставлення шунтуючої на ВЧ повної внутрішньої ємності (побічний неквазістатичний ефект) + Tt linear temperature coefficient + лінійний температурний коефіцієнт Tt - - - - - Ration of internal to total minority charge - Ставлення внутрішнього до повного заряду неосновних носіїв - - - - - - - - Forward ideality factor of substrate transfer current - Прямий коефіцієнт ідеальності передатного струму підкладки + Tt quadratic temperature coefficient + квадратичний температурний коефіцієнт Tt - - - - - C-S diode saturation current - Струм насичення переходу К-П - - - - - - - - Ideality factor of C-S diode current - Коєфіцієнта ідеальності струму переходу К-П + M linear temperature coefficient + лінійний температурний коефіцієнт M - - - - - Transit time for forward operation of substrate transistor - Час прольоту для транзистора підкладки у напрямку - - - - - - - - Substrate series resistance - Послідовний опір підкладки + M quadratic temperature coefficient + квадратичний температурний коефіцієнт M - - - - - - Substrate shunt capacitance - Шунтуюча ємність підкладки + + + default area for diode + площа за замовчуванням для діода - - - - - - Internal B-E zero-bias depletion capacitance - Внутрішня ємність Б-Е переходу при нульовому зміщенні + + Diode + Діод - - - - - - Internal B-E built-in potential - Внутрішня контактна різницю потенціалів Б-Е + + data voltage level shifter (digital to analogue) verilog device + - - - - - Internal B-E grading coefficient - Внутрішній коефіцієнт неідеальності Б-Е - - - - - - - - Ratio of maximum to zero-bias value of internal B-E capacitance - Відношення максимального значення внутрішньої ємності Б-Е до величині при нульовому зміщення + + voltage level + - - - - - Peripheral B-E zero-bias depletion capacitance - Периферійна ємність переходу Б-Е при нульовому зміщенні - - - - - - - - Peripheral B-E built-in potential - Периферійна контактна різницю потенціалів Б-Е - - - - - - - - Peripheral B-E grading coefficient - Периферійний коєфіцієнт неідеальності переходу Б-Е + + time delay + - - - - - - Ratio of maximum to zero-bias value of peripheral B-E capacitance - Ставлення максимального значення периферійної ємності Б-Е до величині при нульовому зміщенні + + D2A Level Shifter + - - - - - - Internal B-C zero-bias depletion capacitance - Внутрішня ємність Б-К переходу при нульовому зміщенні + + data voltage level shifter (analogue to digital) verilog device + + + + + + + + + + + - - - - - Internal B-C built-in potential - Внутрішня контактна різницю потенціалів Б-К - - - - - - - Internal B-C grading coefficient - Внутрішній коєфіцієнт неідеальності Б-К + + + + + + + + + + + V + - - - - - - Internal B-C punch-through voltage - Внутрішня напруга проникнення Б-К + + A2D Level Shifter + - - - - - - External B-C zero-bias depletion capacitance - Зовнішня ємність Б-К переходу при нульовому зміщенні + + 2to4 demultiplexer verilog device + - - - - - - External B-C built-in potential - Зовнішня контактна різницю потенціалів Б-К + + 2to4 Demux + - - - - - - External B-C grading coefficient - Зовнішній коефіцієнт неідеальності Б-К + + 3to8 demultiplexer verilog device + - - - - - - External B-C punch-through voltage - Зовнішнє напруга проникнення Б-К + + 3to8 Demux + - - - - - Partitioning factor of parasitic B-C cap + + 4to16 demultiplexer verilog device - - - - - Partitioning factor of parasitic B-E cap + + 4to16 Demux - - - - - - C-S zero-bias depletion capacitance - Ємність переходу К-П при нульовому зміщенні + + externally controlled voltage source + - - - - - - C-S built-in potential - Контактна різницю потенціалів К-П + + + voltage in Volts + напруга у вольтах - - - - - - C-S grading coefficient - Коефіцієнт неідеальності переходу К-П + + Externally Controlled Voltage Source + - - - - - - C-S punch-through voltage - Напруга проникнення К-П + + EPFL-EKV MOS 2.6 verilog device + - - - - - - Low current forward transit time at VBC=0V - Час прольоту у напрямку за низьким струмом при VBC=0 У + + long = 1, short = 2 + - - - - - - Time constant for base and B-C space charge layer width modulation - Постійна часу модуляції ширини шару просторового заряду бази Б-К + + length parameter + + - - - - Time constant for modelling carrier jam at low VCE - Постійна часу для моделювання замикання носіїв при низькому VCE - - + - - - - - Neutral emitter storage time - Час зберігання нейтрального емітера - - - - - - - Exponent factor for current dependence of neutral emitter storage time - Множник в показнику ступеня для залежності струму від часу зберігання нейтрального емітера + + + + + m + - - - - - - Saturation time constant at high current densities - Постійна часу насичення при високих густинах струму + + Width parameter + - - - - - Smoothing factor for current dependence of base and collector transit time - Чинник згладжування для залежності струму від часу прольоту бази й колектора + parallel multiple device number + - - - - - Partitioning factor for base and collector portion - Розділювальний чинник для базової і колекторної частин + series multiple device number + - - - - - Internal collector resistance at low electric field - Внутрішній опір колектора при малому електричному полі - - - - - - - - Voltage separating ohmic and saturation velocity regime - Напруга поділу омічного режиму та режиму швидкості насичення + gate oxide capacitance per unit area + - - - - - - Internal C-E saturation voltage - Внутрішня напруга насичення К-С + + F/m**2 + - - - - - - Collector punch-through voltage - Напруга проникнення колектора + + metallurgical junction depth + - - - - - Storage time for inverse operation - Час зберігання ЕВР у інверсному режимі + channel width correction + - - - - - Total parasitic B-E capacitance - Повна паразитная ємність Б-Е + channel length correction + - - - - - Total parasitic B-C capacitance - Повна паразитная ємність Б-К + long channel threshold voltage + - - - - - Factor for additional delay time of minority charge - Чинник для додаткового часу затримки неосновних носіїв заряду - - - - - - - - Factor for additional delay time of transfer current - Чинник для додаткового часу затримки передатного струму - - - - - - - Flag for turning on and off of vertical NQS effect + body effect parameter - - - - - - Flicker noise coefficient - Коефіцієнт 1/f-шуму - - - - - - - - Flicker noise exponent factor - Показник ступеня 1/f-шуму + + V**(1/2) + - - - - Flag for determining where to tag the flicker noise source + bulk Fermi potential - - - - - - Scaling factor for collector minority charge in direction of emitter width - Масштабний множник для колекторних неосновних носіїв у бік ширини емітера + + + + transconductance parameter + передатна провідність - - - - - - Scaling factor for collector minority charge in direction of emitter length - Масштабний множник для колекторних неосновних носіїв у бік довжини емітера + + + A/V**2 + - - - - - Bandgap voltage extrapolated to 0 K - Напруга стабілізації, екстрапольована на 0 До + mobility reduction coefficient + + + - - - - - First order relative TC of parameter T0 - Відносний температурний коефіцієнт першого порядку параметра T0 - - - - - - - Second order relative TC of parameter T0 - Відносний температурний коефіцієнт другого порядку параметра T0 - - - - - - - - Temperature exponent for RCI0 - Температурний показник для RCI0 + + 1/V + - - - - - Relative TC of saturation drift velocity - Відносний температурний коефіцієнт швидкості дрейфу насичення + mobility coefficient + + - - - - - Relative TC of VCES - Відносний температурний коефіцієнт VCES + + V/m + - - - - - - Temperature exponent of internal base resistance - Температурний показник внутрішнього опору бази + + + longitudinal critical field + - - - - - - Temperature exponent of external base resistance - Температурний показник зовнішнього опору бази + + depletion length coefficient + - - - - - Temperature exponent of external collector resistance - Температурний показник зовнішнього опору колектора + narrow-channel effect coefficient + - - - - - - Temperature exponent of emitter resistance - Температурний показник опору емітера + + reverse short channel charge density + - - - - - - Temperature exponent of mobility in substrate transistor transit time - Температурний показник рухливості у часі прольоту транзистора підкладки + + A*s/m**2 + - - - - Effective emitter bandgap voltage + characteristic length - - - - Effective collector bandgap voltage + threshold voltage temperature coefficient - - - - - Effective substrate bandgap voltage + + V/K - - - - - Coefficient K1 in T-dependent band-gap equation + + mobility temperature coefficient - - - - Coefficient K2 in T-dependent band-gap equation + Longitudinal critical field temperature exponent - - - - - Exponent coefficient in B-E junction current temperature dependence + + Ibb temperature coefficient - - - - - - Relative TC of forward current gain for V2.1 model - Відносний температурний коефіцієнт посилення струму у прямому режимі для моделі V2.1 + + 1/K + - - - - - Flag for turning on and off self-heating effect + + heavily doped diffusion length - - - - - J/W + + drain/source diffusion sheet resistance - - - - - Flag for compatibility with v2.1 model (0=v2.1) + + Ohm/square - - - - - Temperature at which parameters are specified - Температура, при який даються параметри моделі + source contact resistance + + - - - - - Temperature change w.r.t. chip temperature for particular transistor - Зміна температури щодо зміни температури кристала для певного транзистора - - - - HICUM L2 v2.22 - HICUM L2 v2.22 {2 ?} - - - - HICUM Level 0 v1.2 verilog device - HICUM Level 2 v2.1 Verilog-модель {0 ?} {1.2 ?} + + + + + + + + + + + Ohm + Ом - - - - reverse Early voltage (normalization volt.) + + drain contact resistance - - - - flag for turning on base related critical current + + gate to source overlap capacitance - - - - Smoothing factor for the d.c. injection width + + + + + F/m - - - - BE charge built-in voltage for d.c. transfer current + + gate to drain overlap capacitance - - - charge BE exponent factor for d.c. transfer current + gate to bulk overlap capacitance - - - - BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current + + first impact ionization coefficient - - - TC of iqf + + 1/m - - - - Exponent factor for temperature dependent thermal resistance + + second impact ionization coefficient - - npn HICUM L0 v1.2 + + saturation voltage factor for impact ionization - - pnp HICUM L0 v1.2 + + area related theshold voltage mismatch parameter - - HICUM Level 0 v1.2g verilog device + + V*m - - high-injection roll-off current + + area related gain mismatch parameter - - TC of iqf (bandgap coefficient of zero bias hole charge) + + area related body effect mismatch parameter - - TC of avalanche prefactor, identical to alfav of Hicum/L2 + + sqrt(V)*m + + + + + + + + + - TC of avalanche exponential factor, identical to alqav of Hicum/L2 + A - - Emitter part coefficient of the zero bias hole charge temperature variation + + + + + + + + F - - Collector part coefficient of the zero bias hole charge temperature variation + + + diode relative area - - Bandgap TC parameter of ver + + charge partition parameter - Bandgap TC parameter of vef - + + + + + + + parameter measurement temperature + температура, при якій обмірювались параметри моделі - - Specific recombination current at the BC barrier for high forward injection + + + + + + + + Celsius - - npn HICUM L0 v1.2g + + EPFL-EKV NMOS 2.6 - pnp HICUM L0 v1.2g + EPFL-EKV PMOS 2.6 - - HICUM Level 0 v1.3 verilog device - HICUM Level 2 v2.1 Verilog-модель {0 ?} {1.3 ?} + + equation defined device + заданий рівнянням пристрій - - Flag for using third order solution for transfer current - + + type of equations + тип рівнянь - - bias dependence for reverse Early voltage - + + number of branches + число розгалужень - - Flag for turning temperature dependence of tef0 on and off - + + + current equation + рівняння струму - - TC of Reverse Early voltage - + + + charge equation + рівняння заряду - - TC of AVER - + + Equation Defined Device + Заданий рівнянням пристрій - - Bandgap difference between base and BE-junction - + + equation + рівняння - - Frist-order TC of iqfh - + + + + Equation + Управління - - Second-order TC of iqfh - + + put result into dataset + помістити результат в набір даних - - npn HICUM L0 v1.3 + + externally driven transient simulation - - pnp HICUM L0 v1.3 - + + + integration method + метод інтегрування - - HICUM Level 2 v2.1 verilog device - HICUM Level 2 v2.1 Verilog-модель + + + order of integration method + порядок методу інтегрування - - Partitioning factor of parasitic B-C capacitance - Роздільний фактор паразитної ємності Б-К + + + initial step size in seconds + початковий розмір кроку в секундах - - Noise factor for internal base resistance - Коєфіцієнт шуму внутрішнього опору бази + + + minimum step size in seconds + мінімальний розмір кроку в секундах - - HICUM L2 v2.1 - HICUM L2 v2.1 + + + relative tolerance of local truncation error + відносний допуск на локальні помилки перерізу - - HICUM Level 2 v2.23 verilog device - HICUM Level 2 v2.1 Verilog-модель {2 ?} {2.23 ?} + + + absolute tolerance of local truncation error + абсолютний допуск на локальні помилки перерізу - - HICUM L2 v2.23 - HICUM L2 v2.23 {2 ?} + + + overestimation of local truncation error + верхня межа переоцінки помилок перерізу - - HICUM Level 2 v2.24 verilog device - HICUM Level 2 v2.1 Verilog-модель {2 ?} {2.24 ?} + + + relax time step raster + допустимі неточності кроків часу - - HICUM L2 v2.24 - HICUM L2 v2.24 {2 ?} + + + perform an initial DC analysis + виконати початковий аналіз постійномго струму - - hicumL2V2p31n verilog device - + + + maximum step size in seconds + максимальна величина кроку в секундах - - Weight factor for the low current minority charge + + External transient simulation - - Parameter describing the slope of hjEi(VBE) + + 1bit full adder verilog device - - Smoothing parameter for hjEi(VBE) at high voltage + + 1Bit FullAdder - - Time constant for modeling carrier jam at low VCE + + 2bit full adder verilog device - - Barrier voltage + + 2Bit FullAdder - - Normalization parameter + + gated D latch verilog device - - Smoothing parameter for barrier voltage + + Gated D-Latch - - fitting factor for critical current + + 4bit Gray to binary converter verilog device - - Flag for turning on and off of correlated noise implementation + + 4Bit Gray2Bin - - Emitter resistance flicker noise coefficient - + + ground (reference potential) + заземлення (опорний потенціал) - - Emitter resistance flicker noise exponent factor - + + Ground + Земля - - Bandgap difference between B and B-E junction used for hjEi0 and hf0 - + + gyrator (impedance inverter) + гіратор (перетворювач повного опору) - - Temperature coefficient for ahjEi - + + gyrator ratio + коефіцієнт гірації - - Temperature coefficient for hjEi0 - + + Gyrator + Гіратор - - Temperature coefficient for Rth + + 1bit half adder verilog device - - First order relative TC of parameter Rth + + 1Bit HalfAdder - - HICUM L2 V2.31 - + + Harmonic balance simulation + Моделювання гармонійного балансу + + + + number of harmonics + число гармонік + + + + Harmonic balance + Гармонічний баланс @@ -12085,7 +7792,7 @@ Wrong 'component' line format! - + ERROR: No file name in SPICE component "%1". ПОМИЛКА: Немає імені файла в компоненті SPICE "%1". @@ -12508,11 +8215,15 @@ Wrong 'component' line format! Джерело струму, кероване напругою - voltage controlled voltage source джерело напруги, кероване напругою + + + voltage controlled resistor + + resistance gain @@ -12547,7 +8258,7 @@ Wrong 'component' line format! - + ERROR: No file name in %1 component "%2". ПОМИЛКА: Немає імені файла %1 в компоненті "%2". @@ -12710,7 +8421,7 @@ Wrong 'component' line format! - + invalid неправильно @@ -12822,7 +8533,7 @@ Wrong 'component' line format! - + Successfully exported @@ -12845,8 +8556,8 @@ Use PNG, JPEG or SVG graphics! - - + + verilog-a user devices @@ -12905,14 +8616,14 @@ Use PNG, JPEG or SVG graphics! - + diagrams - + paintings @@ -13030,16 +8741,16 @@ Set the Octave location on the application settings. - + - + untitled без назви - + Format Error: 'Painting' field is not closed! @@ -13215,17 +8926,17 @@ Unknown field! ПОМИЛКА: Неможливо завантажити підсхему "%1". - + WARNING: Skipping library component "%1". ЗАУВАЖЕННЯ: Пропускається бібліотечний компонент "%1". - - ERROR: Cannot load library component "%1". - ПОМИЛКА: Неможливо завантажити бібліотечний компонент "%1". + + ERROR: "%1": Cannot load library component "%2" from "%3" + - + WARNING: Ignore simulation component in subcircuit "%1". ПОПЕРЕДЖЕННЯ: Модельований компонент в підсхемі "%1" ігноруватимуть. @@ -13235,7 +8946,7 @@ Unknown field! - + ERROR: Only one digital simulation allowed. ПОМИЛКА: Дозволяється лише одне цифрове моделювання. @@ -13364,11 +9075,17 @@ a substrate with lower permittivity and larger height. Cannot save settings file ! + + + Quarter wave filters do not allow low-pass nor high-pass masks + + + QucsActiveFilter - + &File &Файл @@ -13378,7 +9095,29 @@ a substrate with lower permittivity and larger height. В&ихід - + + &View + &Вид + + + + &Console + + + + + Enables/disables the filter calculation console + + + + + Console + +Enables/disables the filter calculation console + + + + &Help &Довідка @@ -13398,30 +9137,30 @@ a substrate with lower permittivity and larger height. Про програму Qt... - - + + Passband attenuation, Ap (dB) - + Stopband attenuation, As (dB) - - Cuttof frequency, Fc (Hz) + + Cutoff frequency, Fc (Hz) - - + + Stopband frequency, Fs (Hz) - + Passband ripple Rp(dB) @@ -13431,7 +9170,7 @@ a substrate with lower permittivity and larger height. - + Filter order @@ -13481,27 +9220,61 @@ a substrate with lower permittivity and larger height. - - Calculation console + + Low Pass - - Filter topology + + General filter amplitude-frequency response - - Filter type: - Тип фільтра: + + + + Unable to implement filter with such parameters and topology +Change parameters and/or topology and try again! + + + + + + Filter calculation was successful + - LowPass + Filter calculation terminated with error! + + + + + Filter calculation terminated with error + + + + + Lower cutoff frequency, Fl (Hz) + + + + + Copyright (C) 2014, 2015 by + Copyright (С) 2005, 2006 {2014, 2015 ?} + + + + Filter topology + Filter type: + Тип фільтра: + + + High Pass @@ -13527,62 +9300,45 @@ a substrate with lower permittivity and larger height. - + Cauer section - - General amplitude frequency response - - - - - Filter topology preview (one stage) - - - - + Filter parameters - + Transfer function and Topology - - General filter amplidure-frequency response - - - - + Filter topology preview - + Filter calculation console - + + + Ready. + Готово. + + + Upper cutoff frequency of band-pass/band-stop filter is less than lower. Unable to implement such filter. Change parameters and try again. - - - - Unable to implement filter with such parameters and topology -Change parapeters and/or topology and try again! - - - - + Unable to use Cauer section for Chebyshev or Butterworth frequency response. Try to use another topology. @@ -13598,40 +9354,28 @@ frequency response. Try to use another topology. Function will be implemented in future version - - - -Filter calculation was sucessfull - - - - - -Filter calculation terminated with error - - Upper cutoff frequency, Fu (Hz) - - Lower cuttoff frequency, Fl (Hz) + + Transient bandwidth, TW (Hz) - - Transient bandwidth, TW (Hz) + + Error! - + Active filter design - + About... Про... @@ -13643,12 +9387,7 @@ Active Filter synthesis program - - Copyright (C) 2014 by - Copyright (С) 2005, 2006 {2014 ?} - - - + About Qt Про програму Qt @@ -13656,7 +9395,7 @@ Active Filter synthesis program QucsApp - + Schematic Схема @@ -13672,42 +9411,42 @@ Active Filter synthesis program - + VHDL Sources Вихідні тексти VHDL - - + + Verilog Sources Вихідний код Verilog - - + + Verilog-A Sources - - + + Octave Scripts - + Spice Files - + Any File Будь-який файл - + The schematic search path has been refreshed. @@ -13727,7 +9466,7 @@ Active Filter synthesis program Схеми - + New Створити @@ -13812,13 +9551,13 @@ Active Filter synthesis program - + - + @@ -13841,7 +9580,7 @@ Active Filter synthesis program Помилка - + Cannot open "%1". Неможливо відкрити файл "%1". @@ -13853,8 +9592,16 @@ Active Filter synthesis program Бібліотечний файл пошкоджений. - - + + + + + Search results + + + + + @@ -13873,13 +9620,18 @@ Active Filter synthesis program Інформація - + Default icon not found: %1.png - + + verilog-a user devices + + + + -port -виводи @@ -13890,14 +9642,14 @@ Active Filter synthesis program - + The document contains unsaved changes! У документі є незбережені зміни! - + Do you want to save the changes before copying? @@ -13908,13 +9660,13 @@ Active Filter synthesis program - + &Save &Зберегти - + Copy file @@ -13948,31 +9700,31 @@ Active Filter synthesis program - + Warning Попередження - + This will delete the file permanently! Continue ? Це безповоротно видалить файл! Продовжити ? - + No Ні - + - + Yes Так - + unknown @@ -14133,7 +9885,7 @@ Active Filter synthesis program - + @@ -14147,7 +9899,7 @@ Active Filter synthesis program Готово. - + Creating new text editor... Створення нового текстового редактора... @@ -14212,12 +9964,12 @@ Active Filter synthesis program - + Cancel Скасувати - + Cannot overwrite an open document Неможливо перезаписати відкритий документ @@ -14232,7 +9984,7 @@ Active Filter synthesis program Збереження всіх файлів... - + Closing file... Закриття файлу... @@ -14256,10 +10008,6 @@ Active Filter synthesis program Open examples directory... - - OK - Гаразд - Printing... @@ -16211,110 +11959,6 @@ About Qt by Trolltech Warnings in last simulation! Press F5 Попередження у тому моделюванні! Натисніть F5 - - About... - Про... - - - Qucs Version - Версія Qucs - - - Quite Universal Circuit Simulator - Цілком універсальне моделювання електричних кіл - - - Copyright (C) - Copyright (С) - - - by Michael Margraf - Michael Margraf - - - Simulator by Stefan Jahn - Моделювання Штефана Яна (Stefan Jahn) - - - VHDL simulator 'FreeHDL' by Edwin Naroska and Marius Vollmer - VHDL моделювання 'FreeHDL' Едвіна Нароска (Edwin Naroska) і Маріуса Вольмера (Marius Vollmer) - - - Special thanks to Jens Flucke and Raimund Jacob - Особлива подяка Йенсу Флюкке (Jens Flucke) і Раймунду Джакобу (Raimund Jacob) - - - Many thanks to Mike Brinson for correcting the VHDL output - Велика подяка Майку Бринсону (Mike Brinson) за внесення поправок в результати VHDL - - - GUI improvements by Gopala Krishna A - Переробка графічного інтерфейсу - Gopala Krishna A - - - Verilog-AMS interface by Helene Parruitte - Інтерфейс з Verilog-AMS: Helene Parruitte - - - Translations: - Переклад: - - - German by Stefan Jahn - Німецький - Stefan Jahn - - - Polish by Dariusz Pienkowski - Польський - Dariusz Pienkowski - - - Romanian by Radu Circa - Румунський - Radu Circa - - - French by Vincent Habchi, F5RCS - Французький - Vincent Habchi, F5RCS - - - Spanish by Jose L. Redrejo Rodriguez - Іспанський - Jose L. Redrejo Rodriguez - - - Japanese by Toyoyuki Ishikawa - Японський - Toyoyuki Ishikawa - - - Italian by Giorgio Luparia and Claudio Girardi - Італійський - Giorgio Luparia і Claudio Girardi - - - Hebrew by Dotan Nahum - Єврейський - Dotan Nahum - - - Swedish by Peter Landgren - Шведський - Peter Landgren - - - Turkish by Onur and Ozgur Cobanoglu - Турецький - Onur і Ozgur Cobanoglu - - - Hungarian by Jozsef Bus - Угорський - Jozsef Bus - - - Russian by Igor Gorbounov - Російський - Ігор Горбунов - - - Czech by Marek Straka - Чеський - Marek Straka - - - Catalan by Antoni Subirats - Каталанский - Antoni Subirats - QucsAttenuator @@ -16585,7 +12229,7 @@ Very simple text editor for Qucs QucsFilter - + &File &Файл @@ -16625,7 +12269,7 @@ Very simple text editor for Qucs - + Filter type: Тип фільтра: @@ -16661,29 +12305,29 @@ Very simple text editor for Qucs - + Corner frequency: Частота зрізу: - + Stop frequency: Кінцева частота: - + Stop band frequency: Частота режекторного фільтра: - - + + Pass band ripple: Нерівномірність в смузі пропускання: - + Stop band attenuation: Придушення режекторного фільтра: @@ -16753,19 +12397,19 @@ Filter synthesis program - + Result: Результат: - + Error Помилка - + Stop frequency must be greater than start frequency. Кінцева частота повинна перевищувати початкову. @@ -16922,17 +12566,22 @@ Enables/disables the table of contents Про - + Component Selection Виділення компоненти - - Search... - Знайти... + + Search Lib Components + - + + Clear + + + + Component Компонент @@ -16947,7 +12596,7 @@ Enables/disables the table of contents Показати модель - + About... Про... @@ -16958,6 +12607,12 @@ Enables/disables the table of contents Програма управління бібліотеками для Qucs + + + Copyright (C) 2011-2015 Qucs Team + + + Copyright (C) 2005 by Michael Margraf @@ -16966,7 +12621,7 @@ Enables/disables the table of contents - + QucsLib Help Довідка по QucsLib @@ -16986,14 +12641,17 @@ Enables/disables the table of contents Модель - - Search result - Результат пошуку + + + + + Search results + - + - + @@ -17002,13 +12660,13 @@ Enables/disables the table of contents Помилка - + Cannot open "%1". Неможливо відкрити файл "%1". - + @@ -17016,21 +12674,6 @@ Enables/disables the table of contents Library is corrupt. Бібліотечний файл пошкоджений. - - - Search Library Component - Пошук компонентів бібліотек - - - - Result - Результат - - - - No appropriate component found. - Відповідний компонент не знайдено. - QucsSettingsDialog @@ -18045,7 +13688,7 @@ Edits the symbol for this schematic - + Error Помилка @@ -18063,7 +13706,7 @@ Set the admsXml location on the application settings. - + ERROR: Cannot create library file "%s". ПОМИЛКА: Неможливо створити файл бібліотеки "%s". @@ -18072,83 +13715,46 @@ Set the admsXml location on the application settings. SearchDialog - - - - Dialog - - - - Text to search for Знайти текст - - - - Text to replace with Замінити на - - - - Ask before replacing Запитувати перед заміною - - - - Case sensitive Враховувати регістр - - - - Whole words only Тільки цілі слова - - - - Search backwards Зворотний пошук - - - - Next - - - - - Close Закрити @@ -18162,31 +13768,6 @@ Set the admsXml location on the application settings. Search Text Знайти текст - - - The search result contains all components whose -name contains the search string. All libraries -are included in the search. - Результати пошуку містять всі компоненти - в іменах яких присутній рядок пошуку. -Усі бібліотеки включені у пошук. - - - - Search string: - Рядок пошуку: - - - - Search - Пошук - - - - - Search result - Результати пошуку - SettingsDialog @@ -18468,12 +14049,6 @@ are included in the search. Simulation aborted by the user! - - Errors: -------- - Помилки: --------- - SpiceDialog @@ -18636,7 +14211,7 @@ are included in the search. SymbolWidget - + Symbol: Позначення: @@ -18645,6 +14220,13 @@ are included in the search. ! Drag n'Drop me ! ! Перетягни мене ! + + + Warning: Symbol '%1' missing in Qucs Library. +Drag and Drop may still work. +Please contact the developers. + + TextDoc diff --git a/qucs/translations/qucs_zh_CN.ts b/qucs/translations/qucs_zh_CN.ts index c79ef0edc9..ec9f905026 100644 --- a/qucs/translations/qucs_zh_CN.ts +++ b/qucs/translations/qucs_zh_CN.ts @@ -1134,10 +1134,6 @@ Cancel 取消 - - File - 文件 - Width in pixels @@ -1183,10 +1179,6 @@ Export Schematic to Image - - Export to image - 导出为图像 - Export diagram to raster or vector image @@ -3536,62 +3528,6 @@ Resistor color code computation program - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - @@ -3747,10 +3683,6 @@ Resistor color code computation program - - - - polarity @@ -3955,10 +3887,6 @@ Resistor color code computation program - - - - @@ -4099,5707 +4027,1478 @@ Resistor color code computation program - - bsim3v34nMOS verilog device + + + + + + + + + + + simulation temperature + + + + + capacitor + capacitance in Farad + + + + initial voltage for transient simulation + + + + + + + + + schematic symbol + + + + + Capacitor + + + + + current controlled current source + + + + + + + forward transfer factor + + + + + + + + + + + + + + + + delay time + + + + + Current Controlled Current Source + + + + + current controlled voltage source + + + + + Current Controlled Voltage Source + + + + + circulator + + + + + reference impedance of port 1 + + + + reference impedance of port 2 + + + + reference impedance of port 3 + + + + + Circulator + + + + + coaxial transmission line + + + + + + relative permittivity of dielectric + + + + + + specific resistance of conductor + + + + + + relative permeability of conductor + + + + inner diameter of shield + + + + diameter of inner conductor + + + + + mechanical length of the line + + + + + + + loss tangent + + + + + Coaxial Line + + + + + 1bit comparator verilog device + + + + + 1Bit Comparator + + + + + 2bit comparator verilog device + + + + + 2Bit Comparator + + + + + 4bit comparator verilog device + + + + + 4Bit Comparator + + + + + number of input ports + + + - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - simulation temperature - - - - - bsim3v34nMOS - - - - - bsim3v34pMOS verilog device - - - - - bsim3v34pMOS - - - - - bsim4v30nMOS verilog device - - - - - bsim4v30nMOS - - - - - bsim4v30pMOS verilog device - - - - - bsim4v30pMOS - - - - - capacitor - - - - - capacitance in Farad - - - - - initial voltage for transient simulation - - - - - - - - - - schematic symbol - - - - - Capacitor - - - - - current controlled current source - - - - - - - forward transfer factor - - - - - - - - - - - - - - - - delay time - - - - - Current Controlled Current Source - - - - - current controlled voltage source - - - - - Current Controlled Voltage Source - - - - - circulator - - - - - reference impedance of port 1 - - - - - reference impedance of port 2 - - - - - reference impedance of port 3 - - - - - Circulator - - - - - coaxial transmission line - - - - - - relative permittivity of dielectric - - - - - - - specific resistance of conductor - - - - - - - relative permeability of conductor - - - - - inner diameter of shield - - - - - diameter of inner conductor - - - - - - mechanical length of the line - - - - - - - - loss tangent - - - - - Coaxial Line - - - - - 1bit comparator verilog device - - - - - 1Bit Comparator - - - - - 2bit comparator verilog device - - - - - 2Bit Comparator - - - - - 4bit comparator verilog device - - - - - 4Bit Comparator - - - - - number of input ports - - - - - - - - voltage of high level - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Error - 错误 - - - - Format Error: -Wrong line start! - - - - - Format Error: -Unknown component! -%1 - -Do you make use of loadable components? - - - - - Format Error: -Wrong 'component' line format! - - - - - coplanar line - - - - - - - - - - - - - - - name of substrate definition - - - - - - - - - - - - width of the line - - - - - - - - width of a gap - - - - - - - - length of the line - - - - - - - - material at the backside of the substrate - - - - - use approximation instead of precise equation - - - - - Coplanar Line - - - - - ideal coupler - - - - - coupling factor - - - - - phase shift of coupling path in degree - - - - - Coupler - - - - - coplanar gap - - - - - width of gap between the two lines - - - - - Coplanar Gap - - - - - coplanar open - - - - - width of gap at end of line - - - - - Coplanar Open - - - - - coplanar short - - - - - Coplanar Short - - - - - coplanar step - - - - - - - width of line 1 - - - - - - - width of line 2 - - - - - distance between ground planes - - - - - Coplanar Step - - - - - coupled transmission lines - - - - - characteristic impedance of even mode - - - - - characteristic impedance of odd mode - - - - - - - - electrical length of the line - - - - - relative dielectric constant of even mode - - - - - relative dielectric constant of odd mode - - - - - attenuation factor per length of even mode - - - - - attenuation factor per length of odd mode - - - - - Coupled Transmission Line - - - - - D flip flop with asynchron reset - - - - - D-FlipFlop - - - - - - dc simulation - - - - - - - - relative tolerance for convergence - - - - - - - - absolute tolerance for currents - - - - - - - - absolute tolerance for voltages - - - - - put operating points into dataset - - - - - - - - maximum number of iterations until error - - - - - save subcircuit nodes into dataset - - - - - preferred convergence algorithm - - - - - - - method for solving the circuit matrix - - - - - dc block - - - - - dc Block - - - - - dc feed - - - - - dc Feed - - - - - D flip flop with set and reset verilog device - - - - - - - - cross coupled gate transfer function high scaling factor - - - - - - - - cross coupled gate transfer function low scaling factor - - - - - - - - cross coupled gate delay - - - - - D-FlipFlop w/ SR - - - - - diac (bidirectional trigger diode) - - - - - - (bidirectional) breakover voltage - - - - - (bidirectional) breakover current - - - - - - - parasitic capacitance - - - - - - - - - emission coefficient - - - - - - - intrinsic junction resistance - - - - - Diac - - - - - - digital simulation - - - - - type of simulation - - - - - duration of TimeList simulation - - - - - netlist format - - - - - - digital source - - - - - - number of the port - - - - - initial output value - - - - - list of times for changing output value - - - - - diode - - - - - - - zero-bias junction capacitance - - - - - - - - - grading coefficient - - - - - - - - junction potential - - - - - linear capacitance - - - - - recombination current parameter - - - - - emission coefficient for Isr - - - - - ohmic series resistance - - - - - - - transit time - - - - - high-injection knee current (0=infinity) - - - - - - - reverse breakdown voltage - - - - - - - current at reverse breakdown voltage - - - - - Bv linear temperature coefficient - - - - - Rs linear temperature coefficient - - - - - Tt linear temperature coefficient - - - - - Tt quadratic temperature coefficient - - - - - M linear temperature coefficient - - - - - M quadratic temperature coefficient - - - - - - default area for diode - - - - - Diode - - - - - data voltage level shifter (digital to analogue) verilog device - - - - - - voltage level - - - - - - time delay - - - - - D2A Level Shifter - - - - - data voltage level shifter (analogue to digital) verilog device - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - V - - - - - A2D Level Shifter - - - - - 2to4 demultiplexer verilog device - - - - - 2to4 Demux - - - - - 3to8 demultiplexer verilog device - - - - - 3to8 Demux - - - - - 4to16 demultiplexer verilog device - - - - - 4to16 Demux - - - - - externally controlled voltage source - - - - - - voltage in Volts - - - - - Externally Controlled Voltage Source - - - - - EPFL-EKV MOS 2.6 verilog device - - - - - long = 1, short = 2 - - - - - length parameter - - - - - - - - - - - - - m - - - - - Width parameter - - - - - parallel multiple device number - - - - - series multiple device number - - - - - gate oxide capacitance per unit area - - - - - F/m**2 - - - - - metallurgical junction depth - - - - - channel width correction - - - - - channel length correction - - - - - long channel threshold voltage - - - - - body effect parameter - - - - - V**(1/2) - - - - - bulk Fermi potential - - - - - - - transconductance parameter - - - - - - A/V**2 - - - - - mobility reduction coefficient - - - - - - - - - - - - - 1/V - - - - - mobility coefficient - - - - - - - V/m - - - - - - longitudinal critical field - - - - - depletion length coefficient - - - - - narrow-channel effect coefficient - - - - - reverse short channel charge density - - - - - A*s/m**2 - - - - - characteristic length - - - - - threshold voltage temperature coefficient - - - - - - - - - - - - - V/K - - - - - mobility temperature coefficient - - - - - Longitudinal critical field temperature exponent - - - - - Ibb temperature coefficient - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1/K - - - - - heavily doped diffusion length - - - - - drain/source diffusion sheet resistance - - - - - Ohm/square - - - - - source contact resistance - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Ohm - Ω - - - - drain contact resistance - - - - - gate to source overlap capacitance - - - - - - - - F/m - - - - - gate to drain overlap capacitance - - - - - gate to bulk overlap capacitance - - - - - first impact ionization coefficient - - - - - 1/m - - - - - second impact ionization coefficient - - - - - saturation voltage factor for impact ionization - - - - - area related theshold voltage mismatch parameter - - - - - V*m - - - - - area related gain mismatch parameter - - - - - area related body effect mismatch parameter - - - - - sqrt(V)*m - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - F - - - - - - diode relative area - - - - - charge partition parameter - - - - - - - - - - - parameter measurement temperature - - - - - - - - - - - Celsius - - - - - EPFL-EKV NMOS 2.6 - - - - - EPFL-EKV PMOS 2.6 - - - - - equation defined device - - - - - type of equations - - - - - number of branches - - - - - - current equation - - - - - - charge equation - - - - - Equation Defined Device - - - - - equation - - - - - - - Equation - - - - - put result into dataset - - - - - externally driven transient simulation - - - - - - integration method - - - - - - order of integration method - - - - - - initial step size in seconds - - - - - - minimum step size in seconds - - - - - - relative tolerance of local truncation error - - - - - - absolute tolerance of local truncation error - - - - - - overestimation of local truncation error - - - - - - relax time step raster - - - - - - perform an initial DC analysis - - - - - - maximum step size in seconds - - - - - External transient simulation - - - - - 1bit full adder verilog device - - - - - 1Bit FullAdder - - - - - 2bit full adder verilog device - - - - - 2Bit FullAdder - - - - - gated D latch verilog device - - - - - Gated D-Latch - - - - - 4bit Gray to binary converter verilog device - - - - - 4Bit Gray2Bin - - - - - ground (reference potential) - - - - - Ground - - - - - gyrator (impedance inverter) - - - - - gyrator ratio - - - - - Gyrator - - - - - 1bit half adder verilog device - - - - - 1Bit HalfAdder - - - - - Harmonic balance simulation - 谐波平衡仿真 - - - - number of harmonics - 谐波阶数 - - - - Harmonic balance - 谐波平衡 - - - - HBT model by Ferdinand-Braun-Institut (FBH), Berlin - - - - - - - - Ignored - 已忽略 - - - - Device operating temperature, Celsius - 器件工作温度（摄氏度） - - - - Thermal resistance, K/W - 热阻（K/W） - - - - - - - - - - - - - Thermal capacitance - 热容 - - - - Scaling factor, number of emitter fingers - - - - - Length of emitter finger, m - - - - - Width of emitter finger, m - - - - - Forward saturation current density, A/um^2 - - - - - Forward current emission coefficient - - - - - Forward thermal activation energy, V, (0 == disables temperature dependence) - - - - - B-E leakage saturation current density, A/um^2 - - - - - B-E leakage emission coefficient - - - - - Limiting resistor of B-E leakage diode, Ohm - - - - - B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - 2nd B-E leakage saturation current density, A/um^2 - - - - - 2nd B-E leakage emission coefficient - - - - - 2nd Limiting resistor of B-E leakage diode, Ohm - - - - - 2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Reverse saturation current density, A/um^2 - - - - - Reverse current emission coefficient - - - - - Reverse thermal activation energy, V, (0 == disables temperature dependence) - - - - - Fraction of Cjc that goes to internal base node - - - - - B-C leakage saturation current density, A/um^2 (0. switches off diode) - - - - - B-C leakage emission coefficient (0. switches off diode) - - - - - Limiting resistor of B-C leakage diode, Ohm - - - - - B-C leakage thermal activation energy, V, (0 == disables temperature dependence) - - - - - Ideal forward beta - - - - - Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence) - - - - - Ideal reverse beta - - - - - Forward Early voltage, V, (0 == disables Early Effect) - - - - - Reverse Early voltage, V, (0 == disables Early Effect) - - - - - Forward high-injection knee current, A, (0 == disables Webster Effect) - - - - - Reverse high-injection knee current, A, (0 == disables Webster Effect) - - - - - C-E breakdown exponent, (0 == disables collector break-down) - - - - - C-E breakdown voltage, V, (0 == disables collector break-down) - - - - - C-E breakdown factor, (0 == disables collector break-down) - - - - - B-E breakdown voltage, V, (0 == disables emitter break-down) - - - - - Ideal reverse transit time, s - - - - - Extrinsic BC diffusion capacitance, F - - - - - Ideal forward transit time, s - - - - - Temperature coefficient of forward transit time - - - - - Excess transit time coefficient at base push-out - - - - - Smoothing parameter for Thcs - - - - - B-E zero-bias depletion capacitance, F/um^2 - - - - - B-E junction exponential factor - - - - - B-E junction built-in potential, V - - - - - B-C zero-bias depletion capacitance, F/um^2 - - - - - B-C junction exponential factor - - - - - B-C junction built-in potential, V - - - - - not used - 未使用 - - - - Minimum B-C depletion capacitance (Vbc dependence), F/um^2 - - - - - Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction) - - - - - Fraction of Cmin, lower limit of BC capacitance (Ic dependence) - - - - - Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out) - - - - - Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out) - - - - - Slope of Jk at high currents , Ohm*um^2 - - - - - Voltage shift of base push-out onset, V - - - - - Collector resistance, Ohm/finger - - - - - Emitter resistance, Ohm/finger - - - - - Extrinsic base resistance, Ohm/finger - - - - - Inner Base ohmic resistance, Ohm/finger - - - - - Collector inductance, H - 集电极电感（H） - - - - Emitter inductance, H - 发射极电感（H） - - - - Base inductance, H - 基极电感（H） - - - - Extrinsic B-C capacitance, F - - - - - Extrinsic base capacitance, F - - - - - Extrinsic collector capacitance, F - - - - - - Flicker-noise coefficient - - - - - - Flicker-noise exponent - - - - - - Flicker-noise frequency exponent - - - - - Burst noise coefficient - - - - - Burst noise exponent - - - - - Burst noise corner frequency, Hz - - - - - Ambient temperature at which the parameters were determined - - - - - FBH HBT - - - - - HICUM Level 0 v1.12 verilog device - - - - - - - - (Modified) saturation current - - - - - - - - Non-ideality coefficient of forward collector current - - - - - - - - Non-ideality coefficient of reverse collector current - - - - - - - - - - - - - - - - forward Early voltage (normalization volt.) - - - - - - - - forward d.c. high-injection roll-off current - - - - - - - - inverse d.c. high-injection roll-off current - - - - - - - - high-injection correction current - - - - - - - high-injection correction factor - - - - - - - - BE saturation current - - - - - - - - BE non-ideality factor - - - - - - - - BE recombination saturation current - - - - - - - - BE recombination non-ideality factor - - - - - - - - BC saturation current - - - - - - - - BC non-ideality factor - - - - - - - - Zero-bias BE depletion capacitance - - - - - - - - BE built-in voltage - - - - - - - - BE exponent factor - - - - - - - - Ratio of maximum to zero-bias value - - - - - - - - low current transit time at Vbici=0 - - - - - - - - Base width modulation contribution - - - - - - - - SCR width modulation contribution - - - - - - - - Storage time in neutral emitter - - - - - - - - Exponent factor for emitter transit time - - - - - - - - Saturation time at high current densities - - - - - - - - Smoothing factor for current dependence - - - - - - - - Storage time at inverse operation - - - - - - - - Low-field collector resistance under emitter - - - - - - - - Voltage dividing ohmic and satur.region - - - - - - - - - - - - Punch-through voltage - - - - - - - - Saturation voltage - - - - - - - - Total zero-bias BC depletion capacitance - - - - - - - - BC built-in voltage + + + + voltage of high level - - - - - BC exponent factor - + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + Error + 错误 - - - - - Punch-through voltage of BC junction + + Format Error: +Wrong line start! - - - - - Zero-bias external BC depletion capacitance + + Format Error: +Unknown component! +%1 + +Do you make use of loadable components? - - - - - External BC built-in voltage + + Format Error: +Wrong 'component' line format! - - - - - External BC exponent factor + + coplanar line - - - - - Split factor = Cjci0/Cjc0 + + + + + + + + + + + + name of substrate definition - - - - Internal base resistance at zero-bias - - - - - - - - Geometry factor + + + + + + + + width of the line - - - - - - - - - External base series resistance - - - - - - - - - - - - - Emitter series resistance - - - - - - - - - - - - - External collector series resistance - - - - - - - - - - - - - Substrate transistor transfer saturation current - - - - - - - - Substrate transistor transfer current non-ideality factor + + + + width of a gap - - - - SC saturation current - - - - - - - - SC non-ideality factor + + + + length of the line - - - - Zero-bias SC depletion capacitance - - - - - - - - SC built-in voltage + + + + material at the backside of the substrate - - - - External SC exponent factor - - - - - - - - SC punch-through voltage + use approximation instead of precise equation - - - - - Collector-base isolation (overlap) capacitance + + Coplanar Line - - - - - Emitter-base oxide capacitance + + ideal coupler - - - - - Exponent factor + + coupling factor - - - - Prefactor - - - - - - - - M^(1-AF) + phase shift of coupling path in degree - - - - - flicker noise exponent factor + + Coupler - - - - - Bandgap-voltage + + coplanar gap - - - - - Effective emitter bandgap-voltage + + width of gap between the two lines - - - - - Effective collector bandgap-voltage + + Coplanar Gap - - - - - Effective substrate bandgap-voltage + + coplanar open - - - - - Coefficient K1 in T-dependent bandgap equation + + width of gap at end of line - - - - - Coefficient K2 in T-dependent bandgap equation + + Coplanar Open - - - - - Frist-order TC of tf0 + + coplanar short - - - - - Second-order TC of tf0 + + Coplanar Short - - - - - - 1/K^2 + + coplanar step - - - - - - - - - Exponent coefficient in transfer current temperature dependence + + + + width of line 1 - - - - Exponent coefficient in BE junction current temperature dependence + + + width of line 2 - - - - TC of epi-collector diffusivity + distance between ground planes - - - - - Relative TC of satur.drift velocity + + Coplanar Step - - - - - Relative TC of vces + + coupled transmission lines - - - - - TC of internal base resistance + + characteristic impedance of even mode - - - - TC of external base resistance + characteristic impedance of odd mode - - - - TC of external collector resistance + + + + electrical length of the line - - - - TC of emitter resistances + relative dielectric constant of even mode - - - TC of avalanche prefactor + relative dielectric constant of odd mode - - - - TC of avalanche exponential factor + + attenuation factor per length of even mode - - - - - Flag for self-heating calculation + + attenuation factor per length of odd mode - - - - - - - - - - Thermal resistance + + Coupled Transmission Line - - - - - - - - - K/W + + D flip flop with asynchron reset - - - - - Ws/K + + D-FlipFlop - - - - - Temperature for which parameters are valid + + + dc simulation - - - - - - - - - C + + + + + relative tolerance for convergence - - - - Temperature change for particular transistor + + + + absolute tolerance for currents - - - - - - - - - K + + + + + absolute tolerance for voltages - - npn HICUM L0 v1.12 + + put operating points into dataset - - pnp HICUM L0 v1.12 + + + + + maximum number of iterations until error - - HICUM Level 2 v2.22 verilog device + + save subcircuit nodes into dataset - - - - - GICCR constant + preferred convergence algorithm - - - - - A^2s + + + + method for solving the circuit matrix - - - - - - Zero-bias hole charge + + dc block - - - - - - - - - Coul + + dc Block - - - - - - High-current correction for 2D and 3D effects + + dc feed - - - - - - Emitter minority charge weighting factor in HBTs + + dc Feed - - - - - - Collector minority charge weighting factor in HBTs + + D flip flop with set and reset verilog device - - - - - - B-E depletion charge weighting factor in HBTs + + + + + cross coupled gate transfer function high scaling factor - - - - - B-C depletion charge weighting factor in HBTs + + + + cross coupled gate transfer function low scaling factor - - - - - Internal B-E saturation current + + + + cross coupled gate delay - - - - - - Internal B-E current ideality factor + + D-FlipFlop w/ SR - - - - - - Internal B-E recombination saturation current + + diac (bidirectional trigger diode) - - - - - - Internal B-E recombination current ideality factor + + + (bidirectional) breakover voltage - - - - - Peripheral B-E saturation current - - - - - - - - - Peripheral B-E current ideality factor + (bidirectional) breakover current - - - - - Peripheral B-E recombination saturation current + + + parasitic capacitance - - - - - - Peripheral B-E recombination current ideality factor + + + + + + emission coefficient - - - - - Non-ideality factor for III-V HBTs + + + intrinsic junction resistance - - - - - Base current recombination time constant at B-C barrier for high forward injection + + Diac - - - - - - Internal B-C saturation current + + + digital simulation - - - - - - Internal B-C current ideality factor + + type of simulation - - - - - External B-C saturation current + duration of TimeList simulation - - - - - - External B-C current ideality factor + + netlist format - - - - - - B-E tunneling saturation current + + + digital source - - - - - - Exponent factor for tunneling current + + + number of the port - - - - Specifies the base node connection for the tunneling current + initial output value - - - - - Avalanche current factor + list of times for changing output value - - - - - - Exponent factor for avalanche current + + diode - - - - - - Relative TC for FAVL + + + + zero-bias junction capacitance - - - - - - Relative TC for QAVL + + + + + + grading coefficient - - - - - - Zero bias internal base resistance + + + + + junction potential - - - - - - Factor for geometry dependence of emitter current crowding + + linear capacitance - - - - - Correction factor for modulation by B-E and B-C space charge layer + recombination current parameter - - - - - Ratio of HF shunt to total internal capacitance (lateral NQS effect) + emission coefficient for Isr - - - - - Ration of internal to total minority charge + ohmic series resistance - - - - - - Forward ideality factor of substrate transfer current + + + + transit time - - - - - C-S diode saturation current + high-injection knee current (0=infinity) - - - - - - Ideality factor of C-S diode current + + + + reverse breakdown voltage - - - - - Transit time for forward operation of substrate transistor + + + current at reverse breakdown voltage - - - - - - Substrate series resistance + + Bv linear temperature coefficient - - - - - - Substrate shunt capacitance + + Rs linear temperature coefficient - - - - - - Internal B-E zero-bias depletion capacitance + + Tt linear temperature coefficient - - - - - - Internal B-E built-in potential + + Tt quadratic temperature coefficient - - - - - - Internal B-E grading coefficient + + M linear temperature coefficient - - - - - Ratio of maximum to zero-bias value of internal B-E capacitance + M quadratic temperature coefficient - - - - - - Peripheral B-E zero-bias depletion capacitance + + + default area for diode - - - - - - Peripheral B-E built-in potential + + Diode + + + + + data voltage level shifter (digital to analogue) verilog device - - - - - Peripheral B-E grading coefficient + + voltage level - - - - - Ratio of maximum to zero-bias value of peripheral B-E capacitance + + time delay - - - - - - Internal B-C zero-bias depletion capacitance + + D2A Level Shifter - - - - - - Internal B-C built-in potential + + data voltage level shifter (analogue to digital) verilog device + + + + + + + + + + + + + + + + + + + - - - - - Internal B-C grading coefficient + + + V - - - - - - Internal B-C punch-through voltage + + A2D Level Shifter - - - - - - External B-C zero-bias depletion capacitance + + 2to4 demultiplexer verilog device - - - - - - External B-C built-in potential + + 2to4 Demux - - - - - - External B-C grading coefficient + + 3to8 demultiplexer verilog device - - - - - - External B-C punch-through voltage + + 3to8 Demux - - - - - Partitioning factor of parasitic B-C cap + + 4to16 demultiplexer verilog device - - - - - Partitioning factor of parasitic B-E cap + + 4to16 Demux - - - - - - C-S zero-bias depletion capacitance + + externally controlled voltage source - - - - - - C-S built-in potential + + + voltage in Volts - - - - - - C-S grading coefficient + + Externally Controlled Voltage Source - - - - - - C-S punch-through voltage + + EPFL-EKV MOS 2.6 verilog device - - - - - - Low current forward transit time at VBC=0V + + long = 1, short = 2 - - - - - - Time constant for base and B-C space charge layer width modulation + + length parameter + + + + - - - - Time constant for modelling carrier jam at low VCE + + + + + m - - - - - - Neutral emitter storage time + + Width parameter - - - - - Exponent factor for current dependence of neutral emitter storage time + parallel multiple device number - - - - - Saturation time constant at high current densities + series multiple device number - - - - - - Smoothing factor for current dependence of base and collector transit time + + gate oxide capacitance per unit area - - - - - - Partitioning factor for base and collector portion + + F/m**2 - - - - - Internal collector resistance at low electric field + metallurgical junction depth - - - - - Voltage separating ohmic and saturation velocity regime + channel width correction - - - - - Internal C-E saturation voltage + channel length correction - - - - - Collector punch-through voltage + long channel threshold voltage - - - - - Storage time for inverse operation + body effect parameter - - - - - - Total parasitic B-E capacitance + + V**(1/2) - - - - - - Total parasitic B-C capacitance + + bulk Fermi potential - - - - - Factor for additional delay time of minority charge + + + transconductance parameter - - - - - - Factor for additional delay time of transfer current + + + A/V**2 - - - - Flag for turning on and off of vertical NQS effect + mobility reduction coefficient - - - - - - Flicker noise coefficient + + + + + + 1/V - - - - - Flicker noise exponent factor + mobility coefficient - - - - - Flag for determining where to tag the flicker noise source + + + + V/m - - - - - - Scaling factor for collector minority charge in direction of emitter width + + + longitudinal critical field - - - - - - Scaling factor for collector minority charge in direction of emitter length + + depletion length coefficient - - - - - Bandgap voltage extrapolated to 0 K - - - - - - - - - First order relative TC of parameter T0 + narrow-channel effect coefficient - - - - - - Second order relative TC of parameter T0 + + reverse short channel charge density - - - - - - Temperature exponent for RCI0 + + A*s/m**2 - - - - - Relative TC of saturation drift velocity + characteristic length - - - - - Relative TC of VCES + threshold voltage temperature coefficient - - - - - - Temperature exponent of internal base resistance + + V/K - - - - - Temperature exponent of external base resistance + mobility temperature coefficient - - - - - Temperature exponent of external collector resistance + Longitudinal critical field temperature exponent - - - - - Temperature exponent of emitter resistance + Ibb temperature coefficient - - - - - - Temperature exponent of mobility in substrate transistor transit time + + 1/K - - - - Effective emitter bandgap voltage - - - - - - - - Effective collector bandgap voltage + heavily doped diffusion length - - - - Effective substrate bandgap voltage + drain/source diffusion sheet resistance - - - - - Coefficient K1 in T-dependent band-gap equation + + Ohm/square - - - - Coefficient K2 in T-dependent band-gap equation + source contact resistance - - - - - Exponent coefficient in B-E junction current temperature dependence - + + + + + + + + + + + + + Ohm + Ω - - - - - - Relative TC of forward current gain for V2.1 model + + drain contact resistance - - - - Flag for turning on and off self-heating effect + gate to source overlap capacitance - - - - - J/W + + + + + F/m - - - - - Flag for compatibility with v2.1 model (0=v2.1) + + gate to drain overlap capacitance - - - - - - Temperature at which parameters are specified + + gate to bulk overlap capacitance - - - - - Temperature change w.r.t. chip temperature for particular transistor + first impact ionization coefficient - - HICUM L2 v2.22 + + 1/m - - HICUM Level 0 v1.2 verilog device + + second impact ionization coefficient - - - - reverse Early voltage (normalization volt.) + + saturation voltage factor for impact ionization - - - flag for turning on base related critical current + area related theshold voltage mismatch parameter - - - - Smoothing factor for the d.c. injection width + + V*m - - - - BE charge built-in voltage for d.c. transfer current + + area related gain mismatch parameter - - - charge BE exponent factor for d.c. transfer current + area related body effect mismatch parameter - - - - BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current + + sqrt(V)*m - - - TC of iqf + + + + + + + + + + + A + + + + + + - - - Exponent factor for temperature dependent thermal resistance + F - - npn HICUM L0 v1.2 + + + diode relative area - pnp HICUM L0 v1.2 - - - - - HICUM Level 0 v1.2g verilog device - - - - - high-injection roll-off current - - - - - TC of iqf (bandgap coefficient of zero bias hole charge) + charge partition parameter - TC of avalanche prefactor, identical to alfav of Hicum/L2 + + + + + + + parameter measurement temperature + + + + - TC of avalanche exponential factor, identical to alqav of Hicum/L2 + + + Celsius - - Emitter part coefficient of the zero bias hole charge temperature variation + + EPFL-EKV NMOS 2.6 - - Collector part coefficient of the zero bias hole charge temperature variation + + EPFL-EKV PMOS 2.6 - - Bandgap TC parameter of ver + + equation defined device - - Bandgap TC parameter of vef + + type of equations - Specific recombination current at the BC barrier for high forward injection - - - - - npn HICUM L0 v1.2g - - - - - pnp HICUM L0 v1.2g + number of branches - - HICUM Level 0 v1.3 verilog device + + + current equation - - Flag for using third order solution for transfer current + + + charge equation - - bias dependence for reverse Early voltage + + Equation Defined Device - - Flag for turning temperature dependence of tef0 on and off + + equation - - TC of Reverse Early voltage + + + + Equation - - TC of AVER + + put result into dataset - - Bandgap difference between base and BE-junction + + externally driven transient simulation - - Frist-order TC of iqfh + + + integration method - Second-order TC of iqfh - - - - - npn HICUM L0 v1.3 + + order of integration method - - pnp HICUM L0 v1.3 + + + initial step size in seconds - - HICUM Level 2 v2.1 verilog device + + + minimum step size in seconds - - Partitioning factor of parasitic B-C capacitance + + + relative tolerance of local truncation error - - Noise factor for internal base resistance + + + absolute tolerance of local truncation error - - HICUM L2 v2.1 + + + overestimation of local truncation error - - HICUM Level 2 v2.23 verilog device + + + relax time step raster - - HICUM L2 v2.23 + + + perform an initial DC analysis - - HICUM Level 2 v2.24 verilog device + + + maximum step size in seconds - - HICUM L2 v2.24 + + External transient simulation - - hicumL2V2p31n verilog device + + 1bit full adder verilog device - - Weight factor for the low current minority charge + + 1Bit FullAdder - - Parameter describing the slope of hjEi(VBE) + + 2bit full adder verilog device - - Smoothing parameter for hjEi(VBE) at high voltage + + 2Bit FullAdder - - Time constant for modeling carrier jam at low VCE + + gated D latch verilog device - - Barrier voltage + + Gated D-Latch - - Normalization parameter + + 4bit Gray to binary converter verilog device - - Smoothing parameter for barrier voltage + + 4Bit Gray2Bin - - fitting factor for critical current + + ground (reference potential) - - Flag for turning on and off of correlated noise implementation + + Ground - - Emitter resistance flicker noise coefficient + + gyrator (impedance inverter) - - Emitter resistance flicker noise exponent factor + + gyrator ratio - - Bandgap difference between B and B-E junction used for hjEi0 and hf0 + + Gyrator - - Temperature coefficient for ahjEi + + 1bit half adder verilog device - - Temperature coefficient for hjEi0 + + 1Bit HalfAdder - - Temperature coefficient for Rth - + + Harmonic balance simulation + 谐波平衡仿真 - - First order relative TC of parameter Rth - + + number of harmonics + 谐波阶数 - - HICUM L2 V2.31 - + + Harmonic balance + 谐波平衡 @@ -12090,7 +7789,7 @@ Wrong 'component' line format! - + ERROR: No file name in SPICE component "%1". @@ -12513,11 +8212,15 @@ Wrong 'component' line format! - voltage controlled voltage source + + + voltage controlled resistor + + resistance gain @@ -12552,7 +8255,7 @@ Wrong 'component' line format! - + ERROR: No file name in %1 component "%2". @@ -12715,7 +8418,7 @@ Wrong 'component' line format! - + invalid @@ -12824,7 +8527,7 @@ Wrong 'component' line format! - + Successfully exported @@ -12847,8 +8550,8 @@ Use PNG, JPEG or SVG graphics! - - + + verilog-a user devices @@ -12907,14 +8610,14 @@ Use PNG, JPEG or SVG graphics! - + diagrams - + paintings @@ -13032,16 +8735,16 @@ Set the Octave location on the application settings. - + - + untitled - + Format Error: 'Painting' field is not closed! @@ -13201,17 +8904,17 @@ Unknown field! - + WARNING: Skipping library component "%1". - - ERROR: Cannot load library component "%1". + + ERROR: "%1": Cannot load library component "%2" from "%3" - + WARNING: Ignore simulation component in subcircuit "%1". @@ -13221,7 +8924,7 @@ Unknown field! - + ERROR: Only one digital simulation allowed. @@ -13337,11 +9040,17 @@ a substrate with lower permittivity and larger height. Cannot save settings file ! + + + Quarter wave filters do not allow low-pass nor high-pass masks + + + QucsActiveFilter - + &File @@ -13351,7 +9060,29 @@ a substrate with lower permittivity and larger height. - + + &View + + + + + &Console + + + + + Enables/disables the filter calculation console + + + + + Console + +Enables/disables the filter calculation console + + + + &Help @@ -13371,30 +9102,30 @@ a substrate with lower permittivity and larger height. - - + + Passband attenuation, Ap (dB) - + Stopband attenuation, As (dB) - - Cuttof frequency, Fc (Hz) + + Cutoff frequency, Fc (Hz) - - + + Stopband frequency, Fs (Hz) - + Passband ripple Rp(dB) @@ -13404,7 +9135,7 @@ a substrate with lower permittivity and larger height. - + Filter order @@ -13454,27 +9185,61 @@ a substrate with lower permittivity and larger height. - - Calculation console + + Low Pass - - Filter topology + + General filter amplitude-frequency response - - Filter type: + + + + Unable to implement filter with such parameters and topology +Change parameters and/or topology and try again! + + + + + + Filter calculation was successful - LowPass + Filter calculation terminated with error! + + + + + Filter calculation terminated with error + + + + + Lower cutoff frequency, Fl (Hz) + + + + + Copyright (C) 2014, 2015 by + + + + + Filter topology + Filter type: + + + + High Pass @@ -13500,62 +9265,45 @@ a substrate with lower permittivity and larger height. - + Cauer section - - General amplitude frequency response - - - - - Filter topology preview (one stage) - - - - + Filter parameters - + Transfer function and Topology - - General filter amplidure-frequency response + + Filter topology preview - - Filter topology preview + + Filter calculation console - - Filter calculation console + + + Ready. - + Upper cutoff frequency of band-pass/band-stop filter is less than lower. Unable to implement such filter. Change parameters and try again. - - - - Unable to implement filter with such parameters and topology -Change parapeters and/or topology and try again! - - - - + Unable to use Cauer section for Chebyshev or Butterworth frequency response. Try to use another topology. @@ -13571,40 +9319,28 @@ frequency response. Try to use another topology. Function will be implemented in future version - - - -Filter calculation was sucessfull - - - - - -Filter calculation terminated with error - - Upper cutoff frequency, Fu (Hz) - - Lower cuttoff frequency, Fl (Hz) + + Transient bandwidth, TW (Hz) - - Transient bandwidth, TW (Hz) + + Error! - + Active filter design - + About... 关于 @@ -13616,12 +9352,7 @@ Active Filter synthesis program - - Copyright (C) 2014 by - - - - + About Qt @@ -13629,7 +9360,7 @@ Active Filter synthesis program QucsApp - + Schematic @@ -13645,42 +9376,42 @@ Active Filter synthesis program - + VHDL Sources - - + + Verilog Sources - - + + Verilog-A Sources - - + + Octave Scripts - + Spice Files - + Any File - + The schematic search path has been refreshed. @@ -13700,7 +9431,7 @@ Active Filter synthesis program - + New @@ -13785,13 +9516,13 @@ Active Filter synthesis program - + - + @@ -13814,7 +9545,7 @@ Active Filter synthesis program 错误 - + Cannot open "%1". @@ -13826,8 +9557,16 @@ Active Filter synthesis program - - + + + + + Search results + + + + + @@ -13846,13 +9585,18 @@ Active Filter synthesis program - + Default icon not found: %1.png - + + verilog-a user devices + + + + -port @@ -13863,13 +9607,13 @@ Active Filter synthesis program - + The document contains unsaved changes! - + Do you want to save the changes before copying? @@ -13880,13 +9624,13 @@ Active Filter synthesis program - + &Save - + Copy file @@ -13920,31 +9664,31 @@ Active Filter synthesis program - + Warning 警告 - + This will delete the file permanently! Continue ? - + No - + - + Yes 确定 - + unknown @@ -14105,7 +9849,7 @@ Active Filter synthesis program - + @@ -14119,7 +9863,7 @@ Active Filter synthesis program - + Creating new text editor... @@ -14183,12 +9927,12 @@ Active Filter synthesis program - + Cancel 取消 - + Cannot overwrite an open document @@ -14203,7 +9947,7 @@ Active Filter synthesis program - + Closing file... @@ -14227,10 +9971,6 @@ Active Filter synthesis program Open examples directory... - - OK - 确定 - Printing... @@ -16022,10 +11762,6 @@ About Qt by Trolltech Warnings in last simulation! Press F5 - - About... - 关于 - QucsAttenuator @@ -16290,7 +12026,7 @@ Very simple text editor for Qucs QucsFilter - + &File @@ -16330,7 +12066,7 @@ Very simple text editor for Qucs - + Filter type: @@ -16366,29 +12102,29 @@ Very simple text editor for Qucs - + Corner frequency: - + Stop frequency: - + Stop band frequency: - - + + Pass band ripple: - + Stop band attenuation: @@ -16458,19 +12194,19 @@ Filter synthesis program - + Result: - + Error 错误 - + Stop frequency must be greater than start frequency. @@ -16625,17 +12361,22 @@ Enables/disables the table of contents - + Component Selection - - Search... + + Search Lib Components - + + Clear + + + + Component @@ -16650,13 +12391,19 @@ Enables/disables the table of contents - + About... 关于 Library Manager for Qucs + + + + + + Copyright (C) 2011-2015 Qucs Team @@ -16667,7 +12414,7 @@ Enables/disables the table of contents - + QucsLib Help @@ -16687,14 +12434,17 @@ Enables/disables the table of contents - - Search result + + + + + Search results - + - + @@ -16703,13 +12453,13 @@ Enables/disables the table of contents 错误 - + Cannot open "%1". - + @@ -16717,21 +12467,6 @@ Enables/disables the table of contents Library is corrupt. - - - Search Library Component - - - - - Result - - - - - No appropriate component found. - - QucsSettingsDialog @@ -17739,7 +13474,7 @@ Edits the symbol for this schematic - + Error 错误 @@ -17757,7 +13492,7 @@ Set the admsXml location on the application settings. - + ERROR: Cannot create library file "%s". @@ -17766,83 +13501,46 @@ Set the admsXml location on the application settings. SearchDialog - - - - Dialog - - - - Text to search for - - - - Text to replace with - - - - Ask before replacing - - - - Case sensitive - - - - Whole words only - - - - Search backwards - - - - Next - - - - - Close 关闭 @@ -17856,29 +13554,6 @@ Set the admsXml location on the application settings. Search Text - - - The search result contains all components whose -name contains the search string. All libraries -are included in the search. - - - - - Search string: - - - - - Search - - - - - - Search result - - SettingsDialog @@ -18321,7 +13996,7 @@ are included in the search. SymbolWidget - + Symbol: @@ -18330,6 +14005,13 @@ are included in the search. ! Drag n'Drop me ! + + + Warning: Symbol '%1' missing in Qucs Library. +Drag and Drop may still work. +Please contact the developers. + + TextDoc From c11e12c4d61ad599df898229fcc7062f5b57bf24 Mon Sep 17 00:00:00 2001 From: Guilherme Brondani Torri Date: Mon, 1 Feb 2016 22:35:00 +0100 Subject: [PATCH 4/4] Remove references in codeblocks scripts --- qucs-core/qucs-core.cbp | 14 -------------- qucs/qucsgui.cbp | 28 ---------------------------- 2 files changed, 42 deletions(-) diff --git a/qucs-core/qucs-core.cbp b/qucs-core/qucs-core.cbp index ca3a40dd0b..c3ce2819b0 100644 --- a/qucs-core/qucs-core.cbp +++ b/qucs-core/qucs-core.cbp @@ -290,10 +290,6 @@ - - - - @@ -306,19 +302,9 @@ - - - - - - - - - - diff --git a/qucs/qucsgui.cbp b/qucs/qucsgui.cbp index 763204c543..6e9fcead42 100644 --- a/qucs/qucsgui.cbp +++ b/qucs/qucsgui.cbp @@ -160,8 +160,6 @@ - - @@ -195,14 +193,6 @@ - - - - - - - - @@ -286,24 +276,6 @@ - - - - - - - - - - - - - - - - - -